Wafer fixture structure and processing equipment causing high temperature creep deformation

Abstract

The present application provides a wafer jig structure and a wafer processing apparatus for causing high-temperature creep deformation, which can effectively improve the geometric warping of a wafer through a lower-temperature annealing process. The wafer jig structure includes a first jig, a second jig, and a force applying assembly. The first jig has a first inclined surface, and the second jig has a second inclined surface. When the first and second jigs are closed to each other to sandwich a wafer between the first and second inclined surfaces, the first and second inclined surfaces are parallel to each other and inclined to a pressing direction, and the first and second jigs press the wafer by an external force applied along the pressing direction. The force applying assembly is adapted to be connected to the first and second jigs and to apply the external force to the first and second jigs. The force applying assembly includes first, second, and third screw members. The first jig is adapted to be connected to the first screw member, the third screw member is adapted to be screwed to the first screw member, and the second screw member is adapted to be screwed to the third screw member. The external force is generated by the first, second, and third screw members.

Description

TECHNICAL FIELD

[0001] The present application relates to a wafer fixture structure and processing equipment, and more particularly to a wafer fixture tilt design structure, and a wafer high temperature processing equipment that can easily activate and develop high temperature creep deformation. BACKGROUND

[0002] In the semiconductor industry, the material of a wafer includes, for example, silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), indium antimonide (InSb), gallium nitride (GaN), silicon carbide (SiC), or zinc selenide (ZnSe). Generally, the method of manufacturing a wafer includes first forming an ingot, and then slicing the ingot to obtain a wafer. The ingot is manufactured, for example, in a high temperature environment. Currently, the growth method of the ingot includes the Czochralski process, the Physical Vapor Transport (PVT) method, the High Temperature Chemical Vapor Deposition (HT-CVD) method, and the Liquid Phase Epitaxy (LPE) method, etc.

[0003] The seed crystal is placed in a high temperature furnace, the seed crystal contacts the raw material in a gaseous or liquid state, and a semiconductor material is formed on the surface of the seed crystal until an ingot with a desired size is obtained. The ingot can have different crystal structures depending on the manufacturing method and the manufacturing raw material. For example, the silicon carbide ingot includes 3C-silicon carbide, 4H-silicon carbide, 6H-silicon carbide, etc. The 3C-silicon carbide belongs to the cubic crystal system, and the 4H-silicon carbide and the 6H-silicon carbide belong to the hexagonal crystal system.

[0004] The ingot grows in a high temperature environment of hundreds of degrees Celsius to thousands of degrees Celsius. During the growth of the ingot, the upper end of the ingot, i.e. the end adjacent to the seed crystal, is called the seed end. The lower end of the ingot, i.e. the end away from the seed crystal, is called the dome end. The seed end and the dome end can have a temperature difference of tens of degrees Celsius to hundreds of degrees Celsius due to the difference in position. In this case, the ingot can have residual stress due to the temperature difference and the inability to stress re-distribution and strain release. If the ingot is silicon carbide, the seed end is a silicon surface and the dome end is a carbon surface. The silicon surface of the ingot can develop residual compressive stress, and the carbon surface of the ingot can exhibit residual tensile stress.

[0005] After the growth of the boule is complete, the boule is cooled to room temperature by furnace cooling or other means. As the boule cools below the plastic-elastic transition temperature, the cold contraction deformation caused by cooling continues to gradually be unable to be released by timely plastic deformation (e.g., dislocation generation, slip, and / or annihilation) of the crystal. For example, dislocations can slip along a particular slip direction on a corresponding slip plane to the surface of the crystal and annihilate. If the boule is considered to simply elastically deform without accounting for the characteristics of delayed plastic deformation (e.g., high temperature creep), the thermal contraction of the boule is approximately given by the following equation:

[0006] ε = kΔT

[0007] In the above equation, ε is the strain, k is the thermal expansion coefficient, and ΔT is the temperature difference. When cooling the boule, the temperature at the seed end can be different from the temperature at the dome end, and the seed end and the dome end can start cooling from different temperatures, resulting in different degrees of thermal contraction at the seed end and the dome end. For example, the seed end can be cooled from 1800 degrees Celsius to room temperature of 20 degrees Celsius, and the dome end can be cooled from 1900 degrees Celsius to 20 degrees Celsius. This results in different temperature gradients at the two ends of the boule and different timing of the contraction in time, resulting in residual compressive and tensile stresses. In other words, because the ΔT at the seed end is different from the ΔT at the dome end, the ε at the seed end is different from the ε at the dome end.

[0008] After the boule is cooled, the poor shape of the head and tail ends of the boule is removed using a saw, and the boule is then ground to a desired size (e.g., 3 inches to 12 inches) using a grinding wheel. In some processes, a flat edge or a V-groove is ground into the edge of the boule. The flat edge or the V-groove can be used as a marker of the crystallographic direction of the boule or as a means of securing the boule.

[0009] The boule is then sliced to obtain a plurality of wafers. For example, the method of slicing the boule includes cutting with a knife or a steel wire with abrasive particles (e.g., diamond particles). In some cases, the wafers have residual compressive and tensile stresses inside, similar to the boule. In some processes, the corners of the wafers are ground to a rounded shape to prevent the corners from breaking due to impact.

[0010] Subsequently, a grinding and polishing process is performed on the wafer to improve the surface quality of the wafer. The method of performing the grinding and polishing process on the wafer includes, for example, a physical grinding process and a chemical mechanical grinding process. The physical grinding process is, for example, a process of grinding the wafer surface with a polishing pad in cooperation with a slurry containing diamond particles or other particles having high hardness. The physical grinding process mainly processes the wafer surface with mechanical force. The chemical mechanical grinding process is a process of grinding the wafer surface with a polishing pad in cooperation with a slurry having corrosiveness and an abrasive. The slurry having corrosiveness in the chemical mechanical grinding process can chemically react with the wafer surface to convert uneven parts of the wafer surface into a material having low hardness, thereby allowing the abrasive to more easily remove the uneven parts of the wafer surface.

[0011] After the grinding and polishing process, the thickness of the wafer is reduced (for example, by several hundred micrometers). The residual tensile stress and compressive stress inside the wafer are partially released (stress relaxation) and the stress is redistributed due to the reduction in the thickness of the wafer, thereby causing the wafer to have geometric warpage such as bow and / or warp.

[0012] Therefore, how to improve the geometric warpage of the silicon carbide wafer after cutting or grinding is an important issue in the process of physical vapor transport (PVT) crystal growth and semiconductor material manufacturing. SUMMARY

[0013] The present application is directed to a wafer jig tilt design structure and a wafer processing apparatus, which can effectively improve the geometric warpage of the wafer through a low-temperature annealing process.

[0014] According to an embodiment of the present application, the wafer jig structure includes a first jig, a second jig, and a force applying assembly. The first jig has a first inclined surface, and the second jig has a second inclined surface. The first and second jigs are close to each other so that the first inclined surface faces the second inclined surface. The force applying assembly is connected to the first and second jigs. The force applying assembly includes a first screw member, a second screw member, and a third screw member. The first jig is connected to the first screw member, the third screw member is screwed into the first screw member, and the second screw member is screwed into the third screw member so that the first and second jigs are located between the first and second screw members.

[0015] In an embodiment according to the present application, when the wafer is clamped between the first and second inclined surfaces, the first and second jigs together form a cylindrical structure.

[0016] In embodiments according to the present application, the first screw member has a first external thread, the second screw member has a second external thread, and the third screw member has an internal thread, the first and second external threads being adapted to threadedly engage different sections of the internal thread, respectively.

[0017] In embodiments according to the present application, the third screw member is cylindrical and adapted to house the first jig, the second jig, at least part of the first screw member, and at least part of the second screw member.

[0018] In embodiments according to the present application, the first and second jigs each have a recess, and the first and second screw members each have a protrusion, each protrusion being adapted to be embedded in a corresponding recess.

[0019] In embodiments according to the present application, the recess is an annular groove, and the protrusion is an annular flange.

[0020] In embodiments according to the present application, the recess comprises a female conical structure, and the protrusion comprises a male conical structure.

[0021] In embodiments according to the present application, the wafer jig structure further comprises a stopper, wherein the first inclined surface has a recess therein, and the stopper is movably disposed in the recess, the stopper being adapted to protrude out of the recess to stop the wafer on the first inclined surface when the second jig is separated from the first jig, and the stopper being pushed against by the second jig to be buried in the recess when the second jig is closed to the first jig.

[0022] In embodiments according to the present application, the wafer jig structure further comprises two sacrificial layers, the two sacrificial layers being adapted to be disposed on the first inclined surface and the second inclined surface, respectively, to contact the wafer.

[0023] In embodiments according to the present application, each of the sacrificial layers is a silicon carbide stopper or a silicon carbide CVD coating.

[0024] According to embodiments of the present application, a wafer jig structure comprises a first jig, a second jig, and a force applying assembly. The first jig has a first inclined surface, and the second jig has a second inclined surface. When the first and second jigs are closed to each other to sandwich a wafer between the first and second inclined surfaces, the first and second inclined surfaces are parallel to each other and inclined to a pressure applying direction, and the first and second jigs are adapted to apply pressure to the wafer by an external force applied along the pressure applying direction. The force applying assembly is adapted to be connected to the first and second jigs and to apply the external force to the first and second jigs. The force applying assembly comprises a first screw member, a second screw member, and a third screw member, the first jig is adapted to be connected to the first screw member, the third screw member is adapted to be screwed to the first screw member, and the second screw member is adapted to be screwed to the third screw member to position the first and second jigs between the first and second screw members, the external force being generated by a screwing force between the first, second, and third screw members.

[0025] According to an embodiment of the present application, a wafer processing apparatus includes the wafer holder structure and a heat source. The heat source is adapted to heat the wafer clamped between the first inclined surface and the second inclined surface.

[0026] Based on the above, in the wafer holder structure of the present application, the first holder and the second holder clamp the wafer through the first inclined surface and the second inclined surface respectively, so that the wafer is annealed in an inclined state, and the partial stress is properly released. Therefore, the wafer holder structure of the present application can effectively improve the geometric defects of the wafer through the annealing process. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 is a top view of a wafer processing apparatus according to an embodiment of the present application;

[0028] Figure 2 is a side view of the wafer holder structure of Figure 1 ;

[0029] Figure 3 is a sectional view of the wafer holder structure of Figure 2 along line I-I;

[0030] Figure 4 is an exploded view of the wafer holder structure of Figure 2 ;

[0031] Figure 5 is a sectional view showing the first holder and the second holder clamping the wafer of Figure 2 ;

[0032] Figure 6 is a partial enlarged view of the first holder, the second holder and the wafer of Figure 5 ;

[0033] Figure 7 shows that the first inclined surface and the second inclined surface of Figure 5 have positive camber values;

[0034] Figure 8 is a partial enlarged view of the first holder, the second holder and the wafer of another embodiment of the present application;

[0035] Figure 9 shows the wafer holder structure of Figure 4 from another viewing angle;

[0036] Figure 10 is a partial enlarged view of the wafer holder structure of Figure 4 ;

[0037] Figure 11A and Figure 11B is an actuation flowchart of the stopper of Figure 4 ;

[0038] Figure 12 is a partial component exploded view of a wafer handling apparatus according to an embodiment of the present application;

[0039] Figure 13 is a partial component exploded view of a wafer handling apparatus according to an embodiment of the present application;

[0040] Figure 14 is a partial component exploded view of a wafer handling apparatus according to an embodiment of the present application. DETAILED DESCRIPTION

[0041] Reference will now be made in detail to the exemplary embodiments of the present application, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.

[0042] Figure 1 is a top view of a wafer handling apparatus according to an embodiment of the present application. Please refer to Figure 1 , the wafer handling apparatus 10 according to the present embodiment includes a wafer handling structure 100 and a heat source 12. The wafer handling structure 100 is used to hold a cut or ground wafer, and the heat source 12 is used to heat the wafer held by the wafer handling structure 100 to perform annealing and stress relief treatment on the wafer. In Figure 1 , only a portion of the heat source 12 is shown, and the heat source 12 is shown as being disposed in a manner surrounding the wafer handling structure 100, but this is merely illustrative. The heat source 12 can be any suitable form of heating device, such as a heat conduction heating or an induction heating, which provides heat to the wafer through the wafer handling structure 100, and the present application is not limited in this regard.

[0043] Figure 2 is a side view of the wafer handling structure of Figure 1 . Figure 3 is a side view of the wafer handling structure of Figure 2 . Figure 4 is a cross-sectional view of the wafer handling structure of Figure 2 . Figure 5 is an exploded view of the wafer handling structure of Figure 2 . is a cross-sectional view of the wafer held by the first and second jigs of Figures 2 to 4The wafer jig structure 100 of the present embodiment includes a base 105, a first jig 110, and a second jig 120. The first jig 110 and the second jig 120 are made of graphite, for example. In other embodiments, the first jig 110 and the second jig 120 can be made of carbide, such as TiC, WC, SiC, MoC, BC, or other high-temperature carbon-resistant metal materials or metal compounds. The first jig 110 and the second jig 120 can be made of different or the same materials according to the design or requirements of the process, and the present application is not limited in this regard. The base 105 is used to support the first jig 110 and the second jig 120. The first jig 110 has a first inclined surface 110a, and the second jig 120 has a second inclined surface 120a. When the first jig 110 and the second jig 120 are closed to each other as shown in Figure 5 , the first inclined surface 110a faces the second inclined surface 120a, and a clamping space CS is formed between the first inclined surface 110a and the second inclined surface 120a. The wafer W is clamped between the first inclined surface 110a and the second inclined surface 120a and located in the clamping space CS. The first jig 110 and the second jig 120, for example, jointly form a cylindrical structure, and the first inclined surface 110a and the second inclined surface 120a are parallel to each other and inclined to the pressing directions D1, D2 along an inclined direction D3. The pressing directions D1, D2 are parallel to the axial direction A of the cylindrical structure (indicated in Figure 2 ). Figure 1 The heat source 12 is adapted to heat the wafer W clamped between the first inclined surface 110a and the second inclined surface 120a. The first jig 110 and the second jig 120 are adapted to apply the pressure required for the annealing process of the wafer W by the external force applied along the pressing directions D1, D2. The wafer jig structure 100 of the present embodiment can apply and adjust the external force to the first jig 110 and the second jig 120 by any suitable force applying assembly or weight, and the present application is not limited in this regard.

[0044] Please refer to Figure 3 , the inner thread 166a of the third screw member 166 has a spacing d from the first jig 110 and the second jig 120 without contacting each other, so as to avoid the third screw member 166 and the first jig 110 and the second jig 120 from generating a force of action on each other and affecting the pressing of the first jig 110 and the second jig 120 on the wafer W. The spacing d can be 2-6 mm, preferably 2.2-5.57 mm, more preferably 2.28-5.57 mm, and most preferably 2-3 mm.

[0045] Figure 6 is a partial enlarged view of the first jig, the second jig, and the wafer of Figure 5 . Please refer to Figure 6When the first jig 110 and the second jig 120 clamp the wafer W, the peripheral portions 110d of the first jig 110 and the peripheral portions 120d of the second jig 120 surround the clamped space CS and the wafer W therein, and the peripheral portions 110d of the first jig 110 and the peripheral portions 120d of the second jig 120 have a gap G therebetween without contacting each other, thereby avoiding the first jig 110 and the second jig 120 from generating a force to each other in the pressing directions Dl, D2 and affecting the pressing of the wafer W. The gap G is greater than 0, for example, about 200 microns.

[0046] As described above, the first jig 110 and the second jig 120 of the present embodiment clamp the wafer W by the first inclined surface 110a and the second inclined surface 120a, respectively, so that the wafer W is in an inclined state for the annealing treatment, and the geometric warpage of the wafer W is effectively improved by the annealing creep treatment. Specifically, in the case that the wafer W has residual tensile stress and compressive stress, after the wafer W is thinned by grinding and polishing, the influence of the stress on the wafer W gradually becomes greater and causes geometric changes such as bow and / or warp. The tensile stress and the compressive stress have a tendency to change the bow value of the wafer W to a negative value, for example. In order to improve this geometric defect, the present embodiment applies an external compressive force to the wafer W which has been cut and not yet ground and polished, or has been ground but not yet polished, in a graphite heating reduction furnace at a temperature of about 1200-1600 degrees Celsius and a pressure of about 100-1000 Mpa. The wafer W is in an inclined state due to the first inclined surface 110a of the first jig 110 and the second inclined surface 120a of the second jig 120, i.e., the normal line of the carbon surface of the wafer W is inclined and extends along the <11-20> direction. Thus, as long as the external compressive force applied to the wafer W by the first jig 110 and the second jig 120 exceeds a certain critical value, the shear force drives the existing dislocation to slide along the <11-20> direction on the carbon surface of the wafer W to eliminate the shear force parallel to the carbon surface of the wafer W, and the internal dislocation of the silicon carbide crystal can be driven to slide along the <11-20> direction on the <0001> crystal surface with the least shear force to achieve the annealing creep effect, wherein the smaller the inclination angle of the wafer W, the greater the external compressive force required. The sliding and climbing of the dislocation partially releases the residual stress in the wafer W. In the present embodiment, the process of applying the external compressive force is performed at a predetermined temperature (e.g., 1200-1600 degrees Celsius as described above) for 1-3 hours, and then the furnace power is turned off. The bow value of the wafer W is improved in this way, and even becomes a positive bow value, which varies depending on the surface curvature design of the first inclined surface 110a and the second inclined surface 120a, wherein the first inclined surface 110a and the second inclined surface 120a have a predetermined positive bow value, for example, so as not to hinder the wafer W clamped therebetween from becoming positive, for example Figure 7In other embodiments, the first inclined surface 110a and the second inclined surface 120a can also have a predetermined bow value, or have different or same predetermined bow values by changing the surface curvature of 11a and 11b according to process design or requirement. Then, after the wafer W is thinned by further grinding and polishing (such as by chemical mechanical grinding, CMP), the effect of the stress on the wafer W gradually increases, and the bow value changes to a negative value. Since the wafer W has a positive bow value before grinding and polishing by the above-mentioned heat treatment, the bow value changes to a normal value between -25 microns and 25 microns, or even a normal value between -15 microns and 15 microns due to the effect of the stress after grinding and polishing.

[0047] In the present embodiment, the inclination angle of the first inclined surface 110a and the second inclined surface 120a with respect to the pressing direction D1, D2 can be between 0-45 degrees, preferably between 15-35 degrees, more preferably between 20-30 degrees, even more preferably between 22-28 degrees, and most preferably 25 degrees. By designing the inclination angle of the first inclined surface 110a and the second inclined surface 120a to the above-mentioned angle, the inclination direction thereof can substantially correspond to the aforementioned <11-20> direction, so that the dislocation is caused to slide along the <11-20> direction on the carbon surface of the wafer W to eliminate the shear force parallel to the carbon surface of the wafer W.

[0048] The wafer jig structure 100 of the present embodiment can further include Figure 5 The two sacrificial layers 140 shown can be respectively arranged on the first inclined surface 110a of the first jig 110 and the second inclined surface 120a of the second jig 120 to contact the wafer W, so as to avoid the wafer W from directly contacting the first jig 110 and the second jig 120 to cause unintended chemical reaction at high temperature. For example, if the material of the wafer W is silicon carbide, the material of the sacrificial layer 140 can be the same as that of the wafer W, i.e., a silicon carbide stopper, but the present application is not limited thereto. Figure 8 is a partial enlarged view of the first jig, the second jig and the wafer of another embodiment of the present application. Figure 8 The embodiment shown is different from Figure 6 The difference between the embodiment shown and Figure 8 The first jig 110 and the second jig 120 of the present embodiment are respectively coated with a silicon carbide CVD plating film on the first inclined surface 110a and the second inclined surface 120a to form the sacrificial layer 140'.

[0049] In other embodiments, the first inclined surface 110a and the second inclined surface 120a can respectively have recessed portions, so that in the case that the sacrificial layer 140 is a wafer, the wafer can be positioned in the recessed portions and is less likely to slip off. The depth of the recessed portions is greater than the thickness of the sacrificial layer.

[0050] The wafer chuck structure 100 further comprises a force applying assembly 160 adapted to be connected to the first chuck 110 and the second chuck 120 and to apply the external force to the first chuck 110 and the second chuck 120.

[0051] In detail, the force applying assembly 160 of the present embodiment comprises a first screw member 162 having a first external thread 162a, a second screw member 164 having a second external thread 164a, and a third screw member 166 being cylindrical and having an internal thread 166a, the first external thread 162a and the second external thread 164a being adapted to be screwed in different sections of the internal thread 166a, respectively. A user can first connect the first chuck 110 to the first screw member 162, and then screw the internal thread 166a of the third screw member 166 to the first external thread 162a of the first screw member 162 so that the first chuck 110 and the first screw member 162 are accommodated inside the third screw member 166. Then, with a wafer already loaded on the first chuck 110, the user can accommodate the second chuck 120 inside the third screw member 166 so that the second chuck 120 and the first chuck 110 jointly sandwich the wafer. Then, the user can screw the second external thread 164a of the second screw member 164 to the internal thread 166a of the third screw member 166 so that at least a portion of the second screw member 164 is accommodated inside the third screw member 166, and so that the first chuck 110 and the second chuck 120 are located between the first screw member 162 and the second screw member 164. At this time, the first screw member 162 and the second screw member 164 abut against the first chuck 110 and the second chuck 120, respectively. Thus, the external force can be generated by the screwing force between the first screw member 162, the second screw member 164 and the third screw member 166, and the magnitude of the external force can be adjusted by changing the magnitude of the screwing force. In the present embodiment, for example, a torque wrench capable of applying a predetermined torque is used to rotate the second screw member 164 so as to accurately adjust the magnitude of the external force.

[0052] Figure 9 A wafer chuck structure is shown in another perspective view. Figure 4 Please refer to Figure 4 and Figure 9 In the present embodiment, the first chuck 110 and the second chuck 120 each have a recess C1, and the first screw member 162 and the second screw member 164 each have a protrusion P1. Each recess C1 is, for example, an annular groove, each protrusion P1 is, for example, an annular flange, and each protrusion P1 is adapted to be embedded in the corresponding recess C1 so that the first chuck 110 and the second chuck 120 are stably combined with the first screw member 162 and the second screw member 164, respectively.

[0053] Figure 10 is a partial enlarged view of the wafer chuck structure Figure 4 corresponding toFigure 4 the region R. Figure 11A and Figure 11B is Figure 4 the actuation flowchart of the stopper. The wafer chuck structure 100 of the present embodiment further comprises Figure 10 the stopper 170 as shown. Accordingly, the first inclined surface 110a of the first chuck 110 has a recess 110c, and the stopper 170 is movably arranged in the recess 110c. When the second chuck 120 is separated from the first chuck 110, the stopper 170 protrudes out of the recess 110c as shown in Figure 11A to stop the wafer on the first inclined surface 110a from sliding off the first chuck 110. When the second chuck 120 is closed to the first chuck 110, the stopper 170 is pushed by the second chuck 120 as shown in Figure 11B to be buried in the recess 110c.

[0054] Figure 12 is a partial component exploded view of the wafer chuck structure of another embodiment of the present application. Figure 12 The difference between the embodiment shown in Figure 4 and the embodiment shown in Figure 12 is that the protruding portion P2 and the concave portion C2 are respectively a convex conical structure and a concave conical structure, so that the first screwing member 162 and the second screwing member 164 can surely press the first chuck 110 and the second chuck 120 through the mutual cooperation of the convex conical structure and the concave conical structure.

[0055] Figure 13 is a partial component exploded view of the wafer chuck structure of another embodiment of the present application. Figure 13 The difference between the embodiment shown in Figure 12 and the embodiment shown in Figure 13 is that the concave portion C3 comprises an inner surface C31 parallel to the pressing directions D1, D2, and the protruding portion P3 comprises an outer surface P31 parallel to the pressing directions D1, D2, and the inner surface C31 and the outer surface P31 are adapted to be closed to each other. Through the mutual cooperation of the inner surface C31 and the outer surface P31, the lateral stopping force between the first and second screwing members 162, 164 and the first and second chucks 110, 120 can be increased, which can resist the component in the inclined direction of the external force applied to the first chuck 110 and the second chuck 120, so that the upper limit of the external force can be correspondingly increased.

[0056] Figure 14 is a partial component exploded view of the wafer chuck structure of another embodiment of the present application. Figure 14 The difference between the embodiment shown in Figure 12 and the embodiment shown in Figure 13 is that the concave portion C3 comprises an inner surface C31 parallel to the pressing directions D1, D2, and the protruding portion P3 comprises an outer surface P31 parallel to the pressing directions D1, D2, and the inner surface C31 and the outer surface P31 are adapted to be closed to each other. Through the mutual cooperation of the inner surface C31 and the outer surface P31, the lateral stopping force between the first and second screwing members 162, 164 and the first and second chucks 110, 120 can be increased, which can resist the component in the inclined direction of the external force applied to the first chuck 110 and the second chuck 120, so that the upper limit of the external force can be correspondingly increased. Figure 14The convex portion P4 and the concave portion C4 respectively include convex and concave conical structures, and the concave portion C4 further includes an inner surface C41 parallel to the pressing directions D1, D2, and the convex portion P4 further includes an outer surface P41 parallel to the pressing directions D1, D2, and the inner surface C41 and the outer surface P41 are adapted to abut against each other. In this way, the first and second screw members 162, 164 can be securely fastened to the first and second jigs 110, 120 through the mutual cooperation of the convex and concave conical structures, and through the mutual cooperation of the inner surface C41 and the outer surface P41, the lateral stopping force between the first and second screw members 162, 164 and the first and second jigs 110, 120 can be increased, which can resist the component of the external force applied to the first and second jigs 110, 120 in the tilting direction, so that the upper limit of the external force can be correspondingly increased.

[0057] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not limited thereto; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some or all of the technical features can be replaced by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A wafer jigs structure, characterized by, Comprising: a first jig having a first inclined surface; a second jig having a second inclined surface, wherein the first jig and the second jig are close to each other so that the first inclined surface faces the second inclined surface; and a force applying assembly connected to the first jig and the second jig, wherein the force applying assembly comprises a first screw member, a second screw member and a third screw member, the first jig is connected to the first screw member, the third screw member is screwed to the first screw member, and the second screw member is screwed to the third screw member so that the first jig and the second jig are located between the first screw member and the second screw member. When the wafer is clamped between the first inclined surface and the second inclined surface, the first jig and the second jig jointly form a cylindrical structure.

2. The wafer jigs structure of claim 1, wherein The first screw member has a first external thread, the second screw member has a second external thread, and the third screw member has an internal thread, the first external thread and the second external thread are adapted to be screwed to different sections of the internal thread respectively.

3. The wafer jigs structure of claim 1, wherein, The third screw member is cylindrical and adapted to accommodate the first jig, the second jig, at least part of the first screw member and at least part of the second screw member.

4. The wafer jigs structure of claim 1, wherein, The first jig and the second jig each have a recess, and the first screw member and the second screw member each have a protrusion, each of the protrusions is adapted to be embedded in the corresponding recess.

5. The wafer jigs structure of claim 1, wherein, The recess is an annular groove, and the protrusion is an annular flange.

6. The wafer jigs structure of claim 5, wherein, The recess comprises a recessed conical structure, and the protrusion comprises a protruded conical structure.

7. The wafer jigs structure of claim 5, wherein Further comprising a stopper, wherein the first inclined surface has a groove, the stopper is movably arranged in the groove, when the second jig is separated from the first jig, the stopper is adapted to protrude out of the groove to stop the wafer on the first inclined surface, when the second jig is close to the first jig, the stopper is pushed by the second jig and buried in the groove.

8. The wafer jigs structure of claim 1, wherein, Further comprising two sacrificial layers, the two sacrificial layers are adapted to be arranged on the first inclined surface and the second inclined surface respectively to contact the wafer.

9. The wafer jigs structure of claim 1, wherein, Each of the sacrificial layers is a silicon carbide stopper or a silicon carbide CVD coating.

10. The wafer jigs structure of claim 9, wherein, The internal thread of the third screw member has a spacing with the first jig and the second jig.

11. The wafer jigs structure of claim 1, wherein Comprising:

12. A wafer jigs structure, characterized by, a first jig having a first inclined surface; a second jig having a second inclined surface, wherein when the first jig and the second jig are close to each other to clamp a wafer between the first inclined surface and the second inclined surface, the first inclined surface and the second inclined surface are parallel to each other and inclined to a pressure applying direction, and the first jig and the second jig are adapted to apply pressure to the wafer by an external force applied along the pressure applying direction; and a force applying assembly connected to the first jig and the second jig, wherein the force applying assembly comprises a first screw member, a second screw member and a third screw member, the first jig is connected to the first screw member, the third screw member is screwed to the first screw member, and the second screw member is screwed to the third screw member so that the first jig and the second jig are located between the first screw member and the second screw member. ​ A force applying assembly adapted to be connected to the first jig and the second jig and to apply the external force to the first jig and the second jig, wherein the force applying assembly comprises a first screw member, a second screw member and a third screw member, the first jig is adapted to be connected to the first screw member, the third screw member is adapted to be screwed to the first screw member, the second screw member is adapted to be screwed to the third screw member so as to locate the first jig and the second jig between the first screw member and the second screw member, the external force is generated by a screwing force between the first screw member, the second screw member and the third screw member.

13. A wafer processing apparatus, characterized by comprising: Comprising: The wafer jig structure of claim 12; And A heat source adapted to heat the wafer clamped between the first inclined surface and the second inclined surface.

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