Graphic correction method

Abstract

A graphic correction method, comprising: providing a layout to be corrected, including a plurality of graphics to be corrected; obtaining the minimum process size and the minimum design size of a mask; obtaining a mask size limitation rule, the mask size limitation rule including a plurality of parameters to be set, the parameters to be set including a projection distance; obtaining a limitation condition of the parameters to be set according to the minimum process size and the minimum design size; obtaining a plurality of numerical values of the parameters to be set by taking values for the parameters to be set according to the limitation condition; performing optical proximity effect correction on the graphics to be corrected according to the numerical values of the parameters to be set, and obtaining a plurality of global residuals; taking the numerical values of a plurality of projection distances as abscissas and the global residuals as ordinates to obtain a plurality of curves; obtaining target numerical values of the parameters to be set according to the slopes of the curves and the corresponding global residuals; and performing optical proximity effect correction on the graphics to be corrected according to the target numerical values of the parameters to be set. The accuracy of optical proximity effect correction is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and particularly to a method for pattern correction. Background Art

[0002] A photomask, also known as a reticle, is one of the necessary materials in the lithography process. The photomask factory writes the designed pattern on the reticle through electron beam lithography. During the lithography process, light passes through the reticle and projects the designed pattern on the reticle onto the photoresist, and then the designed pattern is formed on the silicon wafer. For lithography processes with different nodes and different layers, there are different requirements for the grade and performance of the reticle. The photomask factory defines different minimum line widths and line spacings for reticles of different grades.

[0003] As the process node decreases, optical proximity correction (OPC) is a commonly used technical method to improve the resolution of lithography. The mask rule constrain (MRC) is a key parameter during optical proximity correction, and the setting of the mask rule constrain can refer to the definition of the minimum line width and line spacing of the reticle by the photomask factory. When checking the pattern after optical proximity correction, a frequently occurring problem is usually found, that is, the optical proximity correction cannot be carried out normally due to the mask rule constrain.

[0004] The setting of a reasonable mask rule constrain in the optical proximity correction model can accurately run the optical proximity correction process and reduce error reports during inspection. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a method for pattern correction to improve the accuracy of optical proximity correction.

[0006] To solve the above technical problems, the technical solution of the present invention provides a graphic correction method, including: providing a layout to be corrected, where the layout to be corrected includes several graphics to be corrected; obtaining the minimum process dimension and the minimum design dimension of a mask; obtaining the mask dimension limitation rule, where the mask dimension limitation rule includes several parameters to be set, and the several parameters to be set are different classifications of the side lengths of the graphics to be corrected, and the parameters to be set include a projection distance, and the projection distance is the common projection length of the sides of two adjacent graphics to be corrected in a certain direction; obtaining the limitation conditions of the parameters to be set according to the minimum process dimension and the minimum design dimension, where the limitation conditions include a first coefficient and a second coefficient; taking values for the several parameters to be set in the mask dimension limitation rule according to the limitation conditions to obtain several batches of values of the parameters to be set; performing optical proximity effect correction on the graphics to be corrected according to the values of the parameters to be set to obtain several global residuals, and the several global residuals correspond one by one to the several batches of values of the parameters to be set; taking the value of the projection distance as the abscissa and the global residual corresponding to the value of the projection distance as the ordinate to obtain several curves, and the values of the first coefficient and the second coefficient corresponding to several points on the same curve are the same; obtaining the target value of the parameter to be set according to the slope of the curve and the corresponding global residual; performing optical proximity effect correction on the graphics to be corrected according to the target value of the parameter to be set.

[0007] Optionally, the minimum process dimension includes: the minimum line width of the mask and the minimum line pitch of the mask; the minimum design dimension includes: the minimum design line width of the mask and the minimum design line pitch of the mask.

[0008] Optionally, the parameters to be set further include: non-projected line width, projected line width, non-projected line pitch, and projected line pitch.

[0009] Optionally, the limitation conditions include: a first condition, a second condition, and a third condition. The first condition is: MML ≤ (N1, N2) ≤ k × MDL. The second condition is: MMS ≤ (N3, N4) ≤ k × MDS. The third condition is: (1 - j) × MDL ≤ N5 ≤ (1 + j) × MDL, where k is the first coefficient, j is the second coefficient, MML is the minimum line width of the mask, MDL is the minimum design line width of the mask, MMS is the minimum line pitch of the mask, MDS is the minimum design line pitch of the mask, N1 is the non-projected line width, N2 is the projected line width, N3 is the non-projected line pitch, N4 is the projected line pitch, and N5 is the projection distance.

[0010] Optionally, the method for obtaining values for several parameters to be set in the reticle size definition rule includes: obtaining a first condition and a second condition by obtaining values for a first coefficient within a first preset range at a preset first sampling step; obtaining a third condition by obtaining values for a second coefficient within a second preset range at a preset second sampling step; obtaining values for N1, N2, N3, N4, and N5 within the defined conditions at a preset third sampling step.

[0011] Optionally, the first preset range is 0.5 to 2; the second preset range is 0 to 1.

[0012] Optionally, the method for obtaining values for several parameters to be set in the reticle size definition rule further includes: when the value of the first coefficient causes the first condition not to hold, the non-projected line width and the projected line width are set to the minimum line width of the reticle.

[0013] Optionally, the first sampling step is 0.5, the second sampling step is 0.25, and the third sampling step is 5 nanometers.

[0014] Optionally, the method for obtaining several global residuals by performing optical proximity effect correction according to the values of the parameters to be set includes: providing a correction model; updating the technical document of the correction model according to the values of the parameters to be set; after updating the technical document of the correction model, performing optical proximity effect correction on several of the graphics to be corrected using the correction model to obtain the edge placement errors of several of the graphics to be corrected; obtaining the global residuals according to the edge placement errors and the global residual calculation formula.

[0015] Optionally, global residual where N is the number of graphics to be corrected, EPE i is the edge placement error of the i-th graphic to be corrected, t i is the allowable tolerance value of the i-th point, and w i is the weight of the i-th graphic to be corrected.

[0016] Optionally, the method for obtaining the target value of the parameter to be set according to the slope of the curve and the corresponding global residuals includes: obtaining the slopes of several curves; determining whether the slopes are within a preset range; selecting the curves with slopes within the preset range as target curves; obtaining several global residuals on the target curves, and the value of the parameter to be set corresponding to the batch with the smallest global residual is the target value of the parameter to be set.

[0017] Optionally, the preset range of the slope is less than or equal to 0.3.

[0018] Optionally, the method for obtaining the slopes of several curves includes: calculating the slope of a curve according to the projection distance and the global residual value of any curve by using a slope calculation formula; the slope Slope(xs, ys), where xs is the value of the projection distance and ys is the global residual value corresponding to the projection distance.

[0019] Optionally, taking the values of several said projection distances as the abscissa, and the value range of the abscissa is greater than the minimum design line width of the mask.

[0020] Optionally, the method for performing optical proximity effect correction according to the target value of the parameter to be set includes: providing a correction model; updating the technical document of the correction model according to the target value of the parameter to be set; after updating the technical document of the correction model, performing optical proximity effect correction on several said graphics to be corrected by using the correction model.

[0021] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0022] The technical solution of the present invention provides a graphic correction method to obtain the optimal parameter to be set and set the mask size limitation rule, so as to accurately perform the optical proximity effect correction process, improve the correction efficiency and accuracy, and reduce the error reporting during inspection.

[0023] Furthermore, select the curves with slopes within a preset range as the target curves; obtain several global residual values on the target curves, and the value of the parameter to be set corresponding to the batch with the smallest global residual value is the target value of the parameter to be set. The smaller the global residual value, the closer the graphic after optical proximity correction is to the target graphic; the smaller the slope, the flatter the curve, indicating that setting the mask size limitation rule according to the target value of the parameter to be set can be applicable to various different graphic design sizes. If the slope is larger and the curve is steeper, it indicates that the applicable graphic design size range is smaller when setting the mask size limitation rule according to the target value of the parameter to be set, and there will be inapplicable situations in some designs. Description of the Drawings

[0024] Figures 1 to 4 is a schematic flowchart of the graphic correction method in an embodiment of the present invention;

[0025] Figure 5 and Figure 6 is a schematic diagram of several parameters to be set in the mask size limitation rule in an embodiment of the present invention;

[0026] Figure 7 is a schematic diagram of several curves with the projection distance as the abscissa and the global residual value as the ordinate. Detailed Embodiments

[0027] As described in the background art, the setting of reasonable mask size limitation rules in the optical proximity effect correction model can accurately run the optical proximity effect correction process and reduce error reports during inspection. The technical solution of the present invention provides a graphic correction method that can accurately run the optical proximity effect correction process.

[0028] To make the above objects, features, and beneficial effects of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.

[0029] Figures 1 to 4 It is a schematic flowchart of the graphic correction method in the embodiment of the present invention.

[0030] Please refer to Figure 1 , the graphic correction method includes:

[0031] Step S10: Provide a layout to be corrected, where the layout to be corrected includes several graphics to be corrected;

[0032] Step S20: Obtain the minimum process size and the minimum design size of the mask;

[0033] Step S30: Obtain the mask size limitation rules, where the mask size limitation rules include several parameters to be set, and the several parameters to be set are different classifications of the side lengths of the graphics to be corrected. The parameters to be set include the projection distance, and the projection distance is the common projection length of the sides of two adjacent graphics to be corrected in a certain direction;

[0034] Step S40: Obtain the limitation conditions of the parameters to be set according to the minimum process size and the minimum design size. The limitation conditions include a first coefficient and a second coefficient;

[0035] Step S50: According to the limitation conditions, take values for the several parameters to be set in the mask size limitation rules to obtain several batches of values of the parameters to be set;

[0036] Step S60: Perform optical proximity effect correction on the graphics to be corrected according to the values of the parameters to be set to obtain several global residuals, and the several global residuals correspond one-to-one to the several batches of values of the parameters to be set;

[0037] Step S70: Take the values of the several projection distances as the abscissa and the global residuals corresponding to the values of the projection distances as the ordinate to obtain several curves. The values of the first coefficient and the second coefficient corresponding to several points on the same curve are the same;

[0038] Step S80: Obtain the target values of the parameters to be set according to the slope of the curve and the corresponding global residuals;

[0039] Step S90: Perform optical proximity correction on the to-be-corrected pattern according to the target value of the parameter to be set.

[0040] The technical solution of the present invention provides a pattern correction method, obtains the optimal parameter to be set, and sets the mask size limitation rule, so as to accurately perform the optical proximity correction process, improve the correction efficiency and accuracy, and reduce the error reporting during inspection.

[0041] Please continue to refer to Figure 1 , and perform Step S10: Provide the to-be-corrected layout, where the to-be-corrected layout includes several to-be-corrected patterns.

[0042] The to-be-corrected layout is the layout to be made on the mask after optical proximity correction.

[0043] Please continue to refer to Figure 1 , and perform Step S20: Obtain the minimum process size and the minimum design size of the mask.

[0044] The application node of this mask is known, so the minimum process size that this mask can meet and the minimum design size of this mask at this node can be known.

[0045] The minimum process size includes: the minimum mask line width (Min Mask Line, abbreviated as MML) and the minimum mask space (Min Mask Space, abbreviated as MMS); the minimum design size includes: the minimum design line width (MinDesign Line, abbreviated as MDL) and the minimum design space (Min Design Space, abbreviated as MDS).

[0046] Please refer to Figure 5 and Figure 6 Please continue to refer to Figure 1 , Figure 5 and Figure 6 are schematic diagrams of several parameters to be set in the mask size limitation rule in the embodiment of the present invention. Perform Step S30: Obtain the mask size limitation rule, where the mask size limitation rule includes several parameters to be set, and the several parameters to be set are different classifications of the side lengths of the to-be-corrected patterns. The parameter to be set includes the projection distance N5, and the projection distance N5 is the common projection length of the sides of two adjacent to-be-corrected patterns in a certain direction.

[0047] The direction includes a first direction X and a second direction Y that are perpendicular to each other.

[0048] The parameter to be set further includes: the non-projected line width N1, the projected line width N2, the non-projected line distance N3, and the projected line distance N4.

[0049] Please refer toFigure 5 If the edges of the first figure A1 and the edges of the second figure A2 have a common projected length L in the second direction Y, then the common part of such edges is called the projection distance N5. Figure 5 Only the projection situation in the second direction Y is shown. The common projected part in the first direction X is also called the projection distance N5.

[0050] If the projections of the edges of two adjacent figures to be corrected have a common part in the first direction X or the second direction Y, then the two figures to be corrected belong to the projected category, such as Figure 5 the first figure A and the second figure B in; if the projections of the edges of two adjacent figures to be corrected have no common part in the first direction X or the second direction Y, then the two figures to be corrected belong to the non - projected category.

[0051] In addition, when the length L of the common projection of two edges of two figures to be corrected in the first direction X or the second direction Y is greater than the set value, it is considered to be in the projected category; when the length L of the common projection of two edges of two figures to be corrected in the first direction X or the second direction Y is less than the set value, it is considered to be in the non - projected category.

[0052] According to the above - mentioned classification criteria, other parameters to be set as shown in Figure 6 are obtained: non - projected line width N1, projected line width N2, non - projected line spacing N3, and projected line spacing N4.

[0053] Please continue to refer to Figure 1 and execute step S40: Obtain the limiting conditions of the parameters to be set according to the minimum process size and the minimum design size, and the limiting conditions include the first coefficient k and the second coefficient j.

[0054] The limiting conditions include: the first condition, the second condition, and the third condition.

[0055] The first condition is: MML ≤ (N1, N2) ≤ k × MDL;

[0056] The second condition is: MMS ≤ (N3, N4) ≤ k × MDS;

[0057] The third condition is: (1 - j) × MDL ≤ N5 ≤ (1 + j) × MDL.

[0058] Where k is the first coefficient, j is the second coefficient, MML is the minimum line width of the mask, MDL is the minimum designed line width of the mask, MMS is the minimum line spacing of the mask, MDS is the minimum designed line spacing of the mask, N1 is the non - projected line width, N2 is the projected line width, N3 is the non - projected line spacing, N4 is the projected line spacing, and N5 is the projection distance.

[0059] In this embodiment, the minimum values of the non-projected line width N1 and the projected line width N2 are set as the minimum mask line width MML, and the minimum values of the non-projected line pitch N3 and the projected line pitch N4 are set as the minimum mask line pitch MMS; the maximum values of the non-projected line width N1 and the projected line width N2 are set as k x MDL, and the maximum values of the non-projected line pitch N3 and the projected line pitch N4 are set as k x MDS.

[0060] In this embodiment, the first coefficient k can be set according to the actual section, and the value range of the first coefficient k is 0.5 to 2; the value range of the second coefficient j is 0 to 1.

[0061] Please continue to refer to Figure 1 , and execute step S50: According to the limiting conditions, take values for several to-be-set parameters in the mask size limiting rule to obtain the values of several batches of to-be-set parameters.

[0062] The method for taking values for several to-be-set parameters in the mask size limiting rule includes: taking values for the first coefficient k within a first preset range with a preset first sampling step to obtain a first condition and a second condition; taking values for the second coefficient j within a second preset range with a preset second sampling step to obtain a third condition; taking values for the non-projected line width N1, the projected line width N2, the non-projected line pitch N3, the projected line pitch N4, and the projection distance N5 within the limiting conditions with a preset third sampling step.

[0063] In this embodiment, the first preset range is 0.5 to 2; the second preset range is 0 to 1.

[0064] The first sampling step is 0.5, the second sampling step is 0.25, and the third sampling step is 5 nanometers.

[0065] In this embodiment, there are several groups of values for the first coefficient k, several groups of values for the second coefficient j, and there are also several groups of values for the non-projected line width N1, the projected line width N2, the non-projected line pitch N3, the projected line pitch N4, and the projection distance N5 within the limiting conditions obtained according to the first coefficient k and the second coefficient j. Exhaust all combinations of conditions to take values for several to-be-set parameters in the mask size limiting rule to obtain the values of several batches of to-be-set parameters.

[0066] Among them, the to-be-set parameters within one batch include the non-projected line width N1, the projected line width N2, the non-projected line pitch N3, the projected line pitch N4, and the projection distance N5, and the to-be-set parameters of one batch correspond to a group of the first coefficient k and the second coefficient j.

[0067] In this embodiment, the method for obtaining values of several parameters to be set in the mask size definition rule further includes: when the value of the first coefficient k makes the first condition not hold, the non-projected line width N1 and the projected line width N2 take the minimum mask line width MML as their values.

[0068] Please continue to refer to Figure 1 , and perform step S60: Perform optical proximity effect correction on the to-be-corrected graphics according to the values of the parameters to be set, and obtain several global residuals. The several global residuals correspond one-to-one to the values of several batches of parameters to be set.

[0069] Please refer to Figure 2 , in this embodiment, the method for performing optical proximity effect correction according to the values of the parameters to be set and obtaining several global residuals includes:

[0070] Step S601: Provide a correction model;

[0071] Step S602: Update the technical document of the correction model according to the values of the parameters to be set;

[0072] After updating the technical document of the correction model, use the correction model to perform optical proximity effect correction on several to-be-corrected graphics, and obtain the edge placement error EPE of several to-be-corrected graphics;

[0073] Step S604: Obtain the global residual Total AvgTolerance according to the edge placement error and the global residual calculation formula.

[0074] In this embodiment, the global residual where N is the number of to-be-corrected graphics, EPE i is the edge placement error of the i-th to-be-corrected graphic, t i is the allowable tolerance value of the i-th point, and w i is the weight of the i-th to-be-corrected graphic.

[0075] According to different types of graphics, the tolerance value t i is different.

[0076] Please combine with Figure 7 Continue to refer to Figure 1 , and perform step S70: Use the values of several projection distances N5 as the abscissa x, and use the global residual Total Avg Tolerance corresponding to the values of the projection distance N5 as the ordinate y to obtain several curves kj. The values of the first coefficient k and the second coefficient j corresponding to several points on the same curve kj are the same.

[0077] The values of the first coefficient k and the second coefficient j corresponding to several points on the same curve kj are the same, that is, the values of the first coefficient k and the second coefficient j of any two curves kj are at least different in one. That is, according to the first coefficient k and the second coefficient j, the global residual Total Avg Tolerance with the same first coefficient k and second coefficient j and the corresponding projection distance N5 are grouped together, and then the curve kj is plotted for this group of data.

[0078] In this embodiment, the values of several projection distances N5 are used as the abscissa x, and the value of the abscissa x is greater than the minimum design line width MDL of the mask. To meet the design requirements, the value of the abscissa x needs to be greater than the minimum design line width MDL of the mask.

[0079] Please continue to refer to Figure 1 , and execute step S80: Obtain the target value of the parameter to be set according to the slope of the curve kj and the corresponding global residual TotalAvg Tolerance.

[0080] Please refer to Figure 3 , in this embodiment, the method for obtaining the target value of the parameter to be set according to the slope of the curve and the corresponding global residual Total AvgTolerance includes:

[0081] Step S801: Obtain the slopes of several curves kj;

[0082] Step S802: Determine whether the slope is within a preset range;

[0083] Step S803: Select the curve kj with the slope within the preset range as the target curve;

[0084] Step S804: Obtain several global residuals Total Avg Tolerance on the target curve, and the value of the parameter to be set corresponding to the batch with the smallest global residual Total Avg Tolerance is the target value of the parameter to be set.

[0085] Please continue to refer to Figure 3 , and execute step S801. The method for obtaining the slopes of several curves kj includes: calculating the slope of the curve kj according to the projection distance N5 and the global residual Total Avg Tolerance of any curve kj by using the slope calculation formula.

[0086] The slope Slope(xs,ys), where xs is the value of the projection distance N5, and ys is the global residual Total Avg Tolerance corresponding to the projection distance N5.

[0087] In this embodiment, the preset range of the slope Slope is less than or equal to 0.3. The curves kj with a slope Slope less than or equal to 0.3 are all target curves kj.

[0088] Please continue to refer to Figure 3 , perform step S804, and select the numerical value of the parameter to be set corresponding to the batch with the smallest global residual TotalAvg Tolerance on several target curves kj as the target value of the parameter to be set.

[0089] The smaller the global residual Total Avg Tolerance, the closer the pattern after optical proximity correction is to the target pattern; the smaller the slope Slope, the flatter the curve kj, which means that after setting the mask size limitation rule according to the target value of the parameter to be set, it can be applied to various different pattern design sizes. If the slope Slope is larger and the curve kj is steeper, it means that after setting the mask size limitation rule according to the target value of the parameter to be set, the applicable range of pattern design sizes is smaller, and there will be situations where it is not applicable to some designs.

[0090] Please continue to refer to Figure 1 , perform step S90: Perform optical proximity effect correction on the pattern to be corrected according to the target value of the parameter to be set.

[0091] Please refer to Figure 4 , in this embodiment, the method for performing optical proximity effect correction according to the target value of the parameter to be set includes:

[0092] Step S901: Provide a correction model;

[0093] Step S902: Update the technical document of the correction model according to the target value of the parameter to be set;

[0094] After updating the technical document of the correction model, use the correction model to perform optical proximity effect correction on several patterns to be corrected.

[0095] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A graphic correction method, characterized in that, it includes: providing a layout to be corrected, the layout to be corrected including several graphics to be corrected; obtaining the minimum process dimension and the minimum design dimension of a mask; obtaining a mask dimension limiting rule, the mask dimension limiting rule including several parameters to be set, the several parameters to be set being different classifications of the side lengths of the graphics to be corrected, the parameters to be set including a projection distance, the projection distance being the common projection length of the sides of two adjacent graphics to be corrected in a certain direction; obtaining the limiting conditions of the parameters to be set according to the minimum process dimension and the minimum design dimension, the limiting conditions including a first coefficient and a second coefficient, the limiting conditions including: a first condition, a second condition, and a third condition, the first condition being: MML ≤ (N1, N2) ≤ k × MDL, the second condition being: MMS ≤ (N3, N4) ≤ k × MDS, the third condition being: (1 - j) × MDL ≤ N5 ≤ (1 + j) × MDL, where k is the first coefficient, j is the second coefficient, MML is the minimum line width of the mask, MDL is the minimum design line width of the mask, MMS is the minimum line pitch of the mask, MDS is the minimum design line pitch of the mask, N1 is the non-projected line width, N2 is the projected line width, N3 is the non-projected line pitch, N4 is the projected line pitch, and N5 is the projection distance; taking values for the several parameters to be set in the mask dimension limiting rule according to the limiting conditions to obtain several batches of values of the parameters to be set; performing optical proximity effect correction on the graphics to be corrected according to the values of the parameters to be set to obtain several global residuals, the several global residuals corresponding one-to-one to the several batches of values of the parameters to be set; taking the values of the several projection distances as the abscissa and the global residuals corresponding to the values of the projection distances as the ordinate to obtain several curves, and the values of the first coefficient and the second coefficient corresponding to several points on the same curve being the same; obtaining the target values of the parameters to be set according to the slope of the curve and the corresponding global residuals; performing optical proximity effect correction on the graphics to be corrected according to the target values of the parameters to be set.

2. The graphic correction method according to claim 1, characterized in that, the minimum process dimension includes: the minimum line width of the mask and the minimum line pitch of the mask; the minimum design dimension includes: the minimum design line width of the mask and the minimum design line pitch of the mask.

3. The graphic correction method according to claim 2, characterized in that, the parameters to be set further include: non-projected line width, projected line width, non-projected line pitch, and projected line pitch.

4. The graphic correction method according to claim 1, characterized in that, the method for taking values for the several parameters to be set in the mask dimension limiting rule includes: taking values for the first coefficient within a first preset range with a preset first sampling step to obtain the first condition and the second condition; taking values for the second coefficient within a second preset range with a preset second sampling step to obtain the third condition; taking values for N1, N2, N3, N4, and N5 within the limiting conditions with a preset third sampling step.

5. The graphic correction method according to claim 4, characterized in that, the first preset range is 0.5 to 2; the second preset range is 0 to 1.

6. The graphic correction method according to claim 4, characterized in that, the method for obtaining values of several parameters to be set in the mask size limitation rule further includes: when the value of the first coefficient makes the first condition not hold, the non-projected line width and the projected line width take the minimum line width of the mask.

7. The graphic correction method according to claim 4, characterized in that, the first sampling step is 0.5, the second sampling step is 0.25, and the third sampling step is 5 nanometers.

8. The graphic correction method according to claim 1, characterized in that, the method for performing optical proximity effect correction according to the values of the parameters to be set and obtaining several global residuals includes: providing a correction model; updating the technical document of the correction model according to the values of the parameters to be set; after updating the technical document of the correction model, using the correction model to perform optical proximity effect correction on several graphics to be corrected, obtaining the edge placement errors of several graphics to be corrected; obtaining global residuals according to the edge placement errors and the global residual calculation formula.

9. The graphic correction method according to claim 8, characterized in that, Global residual value , where N is the number of graphics to be corrected, and EPE i is the edge placement error of the i-th graphic to be corrected, and t i is the allowable tolerance value of the i-th point, and w i is the weight of the i-th graphic to be corrected.

10. The graphic correction method according to claim 8, characterized in that, the method for obtaining the target value of the parameter to be set according to the slope of the curve and the corresponding global residual includes: obtaining the slopes of several curves; determining whether the slope is within a preset range; selecting the curve with the slope within the preset range as the target curve; obtaining several global residuals on the target curve, and the value of the parameter to be set corresponding to the batch with the smallest global residual is the target value of the parameter to be set.

11. The graphic correction method according to claim 10, characterized in that, the preset range of the slope is less than or equal to 0.

3.

12. The graphic correction method according to claim 10, characterized in that, the method for obtaining the slopes of several curves includes: calculating the slope of the curve according to the projected distance and the global residual of any curve by using the slope calculation formula; the slope Slope(xs, ys), where xs is the value of the projected distance and ys is the global residual corresponding to the projected distance.

13. The graphic correction method according to claim 1, characterized in that, using the values of several projected distances as the abscissa, and the value of the abscissa is greater than the minimum designed line width of the mask.

14. The graphic correction method according to claim 1, characterized in that, the method for performing optical proximity effect correction according to the target value of the parameter to be set includes: providing a correction model; updating the technical document of the correction model according to the target value of the parameter to be set; after updating the technical document of the correction model, using the correction model to perform optical proximity effect correction on several graphics to be corrected.

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