A laser annealing method and apparatus

Abstract

The embodiment of the present application discloses a laser annealing method and device. The object to be annealed includes a compensation area and a non-compensation area. The laser annealing method includes: compensating the output energy density value of a laser module when annealing each compensation point in the compensation area, so that the highest annealing temperature of the compensation area is the same as the thermal equilibrium temperature of the non-compensation area. The technical scheme provided by the embodiment of the present application can increase the effective annealing area and improve the device yield.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a laser annealing method and apparatus. Background Technology

[0002] Laser annealing refers to a processing method that uses lasers to anneal materials, and it is widely used in the semiconductor field. For example, millisecond-level annealing technology can be applied to laser annealing processes for ultra-shallow junctions and silicides at process nodes of 45nm and below in the front-end of integrated circuits.

[0003] Current millisecond-level laser annealing technology uses a continuous millisecond laser to scan the entire wafer at a fixed energy density, providing a residence time on the order of milliseconds to complete the annealing process. However, millisecond-level continuous lasers exhibit a temperature accumulation effect during the scanning annealing process, which is particularly pronounced when the laser beam initially enters the scanning area. For example, when scanning from the wafer edge towards the center, the highest annealing temperature in the edge region will be significantly lower than that in the wafer center due to the temperature accumulation effect. This reduces the effective annealing area, lowers device yield, and results in substantial waste. Summary of the Invention

[0004] This invention provides a laser annealing method and apparatus to improve the difference in maximum annealing temperature between the pre-scanned and post-scanned regions caused by the temperature accumulation effect, thereby increasing the effective annealing area and improving device yield.

[0005] In a first aspect, embodiments of the present invention provide a laser annealing method, the laser annealing method comprising:

[0006] The object to be annealed includes a region to be compensated and a region not to be compensated; the laser annealing method includes:

[0007] During annealing of each point in the region to be compensated, the output energy density of the compensation laser module is adjusted so that the highest annealing temperature of the region to be compensated is the same as the thermal equilibrium temperature of the uncompensated region.

[0008] Optionally, during the annealing of the region to be compensated, the output energy density value of the compensation laser module is adjusted so that the highest annealing temperature of the region to be compensated is the same as the thermal equilibrium temperature of the uncompensated region, including:

[0009] The energy density compensation value of the point to be compensated is determined based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and the preset energy density value.

[0010] The actual energy density value of the point to be compensated is determined based on the energy density compensation value and the preset energy density value.

[0011] At the point to be compensated, the laser module is controlled to output a laser with an energy density value equal to the actual energy density value.

[0012] Optionally, determining the energy density compensation value of the point to be compensated based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and a preset energy density value includes:

[0013] The association relationship of PD(v, pd, s) is determined based on the association relationships of T2(v, pd), T1(v, pd, s) and PD(T1, T2);

[0014] The energy density compensation value is determined based on the preset energy density value and the specific values ​​of v, pd, and s corresponding to the point to be compensated.

[0015] Wherein, T2 is the thermal equilibrium temperature, T1 is the highest annealing temperature of the point to be compensated, PD is the energy density compensation value of the point to be compensated, v is the scanning speed of the laser module, pd is the power density of the laser module, and s is the distance between the point to be compensated and the initial scanning point.

[0016] Optionally, the PD(T1, T2) association includes:

[0017] Wherein, PD0 is the preset energy density value.

[0018] Optional, also includes: according to The PD(v, pd, s) association is converted into the PD(v, pd, t) association; where t is time.

[0019] Optionally, before determining the PD(v,pd,s) correlation relationship based on the T2(v,pd) correlation relationship, the T1(v,pd,s) correlation relationship, and the PD(T1,T2) correlation relationship, the method further includes: obtaining the T2(v,pd) correlation relationship and the T1(v,pd,s) correlation relationship using temperature field simulation.

[0020] Optionally, the laser module includes a first laser; the step of controlling the laser module to output a laser with an energy density value equal to the actual energy density value at the point to be compensated includes:

[0021] At the point to be compensated, the first laser is controlled to output a laser with an energy density value equal to the actual energy density value.

[0022] Optionally, the laser module includes a first laser and a second laser, and controlling the laser module to output a laser with an energy density value equal to the actual energy density value at the point to be compensated includes:

[0023] At the point to be compensated, the first laser is controlled to output a laser with an energy density value equal to the preset energy density value, and the second laser is controlled to output a laser with an energy density value equal to the energy density compensation value of the point to be compensated.

[0024] Optionally, it also includes: at non-compensation points, controlling the laser module to output laser with an energy density value equal to the preset energy density value.

[0025] Secondly, embodiments of the present invention also provide a laser annealing apparatus, which includes: a controller and a laser module electrically connected to each other; the laser module is used to output laser in response to the control of the controller;

[0026] The controller includes a memory and a processor, wherein the memory stores a computer program that, when executed by the processor, implements the method as described in the first aspect.

[0027] The laser annealing method provided in this invention increases the actual maximum annealing temperature of the point to be compensated by adding an energy density compensation value to the preset energy density value. This reduces the difference in the actual maximum annealing temperature of different regions due to the temperature accumulation effect, increases the effective annealing area, and improves the problem of small effective annealing area caused by the temperature accumulation effect in the prior art. It also increases the probability that the actual maximum annealing temperature of the first scanned area can meet the requirements of effective annealing, thereby increasing the effective annealing area and improving the device yield. Attached Figure Description

[0028] Figure 1 This is a flowchart of a laser annealing method provided in an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of a laser scanning path provided in an embodiment of the present invention;

[0030] Figure 3 This is a flowchart of another laser annealing method provided in an embodiment of the present invention;

[0031] Figure 4 This is a schematic diagram illustrating a scanning method provided by an embodiment of the present invention;

[0032] Figure 5 This is a schematic diagram illustrating another scanning method provided by an embodiment of the present invention;

[0033] Figure 6 This is a flowchart of another laser annealing method provided in an embodiment of the present invention;

[0034] Figure 7This is a correspondence diagram of s-T1 and s-T2 provided in an embodiment of the present invention;

[0035] Figure 8 This is a correspondence diagram of s-(T2-T1) provided in an embodiment of the present invention;

[0036] Figure 9 This is a correspondence diagram of s-PD provided in an embodiment of the present invention;

[0037] Figure 10 This is a graph showing the correspondence between s and the actual maximum annealing temperature, provided by an embodiment of the present invention.

[0038] Figure 11 This is a diagram showing the correspondence between scanning speed and influence range provided in an embodiment of the present invention;

[0039] Figure 12 This is a schematic diagram of the structure of a laser annealing device provided in an embodiment of the present invention;

[0040] Figure 13 This is a schematic diagram of the structure of a laser annealing device provided in an embodiment of the present invention. Detailed Implementation

[0041] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0042] In view of the problems mentioned in the background art, embodiments of the present invention provide a laser annealing method. The object to be annealed includes a compensation area and a non-compensation area. The laser annealing method includes: during annealing at each compensation point in the compensation area, compensating the output energy density value of the laser module to make the highest annealing temperature of the compensation area the same as the thermal equilibrium temperature of the non-compensation area. By adopting the above technical solution, the problem of small effective annealing area caused by temperature accumulation effect in the prior art can be improved, increasing the probability that the actual highest annealing temperature of the first scanned area can meet the requirements of effective annealing, thereby increasing the effective annealing area and improving device yield.

[0043] The above is the core idea of ​​this application. The technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0044] Figure 1 This is a flowchart of a laser annealing method provided in an embodiment of the present invention. See also... Figure 1 The method specifically includes the following steps:

[0045] S110. During the annealing of each point to be compensated in the area to be compensated, the output energy density value of the compensation laser module is adjusted so that the highest annealing temperature of the area to be compensated is the same as the thermal equilibrium temperature of the uncompensated area.

[0046] Specifically, this laser annealing method can be executed by a laser annealing device. For example, it can be applied in scenarios where an object to be annealed is being annealed, including areas to be compensated and areas not to be compensated. The laser annealing device can be implemented by software and / or hardware, and is generally integrated into the terminal.

[0047] For example, Figure 2 This is a schematic diagram of a laser scanning path provided in an embodiment of the present invention. See also... Figure 2 The laser scanning path includes a first scanning area Z1 and a second scanning area Z2. Whether a point on the laser scanning path belongs to the first scanning area Z1 or the second scanning area Z2 depends on whether the wafer has reached thermal equilibrium when the laser module moves to that point. Specifically, when the laser module continuously scans along the laser scanning path from left to right at a preset energy density value (fixed value), due to the temperature accumulation effect, the initial temperature of points farther away from the initial scanning point A in the first scanning area is higher, and therefore the highest temperature (i.e., the highest annealing temperature) that point can reach during the laser module's heating process is higher. When the laser module scans to the thermal equilibrium starting point B, the area around the thermal equilibrium starting point B is less affected by its temperature rise, and the temperature of the surrounding area tends to no longer change (or change very little), that is, the wafer enters a thermal equilibrium state. Therefore, the initial temperatures of all points in the second scanning area Z2 are the same (or very similar), resulting in the same (or very similar) highest annealing temperatures. Thus, when the same energy density value is used to scan the laser scanning path, the highest annealing temperature of the first scanning area Z1 will be lower, and the effective annealing temperature may not be reached. In this system, the first scanning area Z1 in each laser scanning path constitutes the compensation area, and each point in the first scanning area Z1 is the compensation point. The second scanning area Z2 in each laser scanning path constitutes the non-compensation area. The initial temperature mentioned here refers to the temperature at which the laser module begins heating a point when it continuously scans at a fixed energy density. The maximum annealing temperature mentioned here refers to the highest annealing temperature that the laser module can reach during the heating process when it continuously scans at a fixed energy density. When the laser module continuously scans at a fixed energy density, the highest annealing temperatures that each point in the second scanning area can reach during the heating process are almost the same; this temperature is the thermal equilibrium temperature.

[0048] Specifically, the laser in the laser module can be a millisecond-level or nanosecond-level laser, etc., without limitation, and those skilled in the art can set it according to the actual situation.

[0049] Specifically, the specific implementation method for compensating the output energy density value of the laser module can be set by those skilled in the art according to the actual situation, and is not limited here. Typical examples will be described later, and will not be elaborated here.

[0050] Understandably, compared to existing technologies that use laser modules to scan the compensation and non-compensation areas with the same laser energy density, this application compensates the compensation point to increase the actual maximum annealing temperature of the compensation point, thereby meeting the requirements for effective annealing, expanding the effective annealing area in the wafer, and improving device yield.

[0051] The laser annealing method provided in this invention increases the actual maximum annealing temperature of the point to be compensated by adding an energy density compensation value to the preset energy density value. This reduces the difference in the actual maximum annealing temperature of different regions due to the temperature accumulation effect, increases the effective annealing area, and improves the problem of small effective annealing area caused by the temperature accumulation effect in the prior art. It also increases the probability that the actual maximum annealing temperature of the first scanned area can meet the requirements of effective annealing, thereby increasing the effective annealing area and improving the device yield.

[0052] Figure 3 This is a flowchart of another laser annealing method provided in an embodiment of the present invention. See also... Figure 3 The method specifically includes the following steps:

[0053] S210. Determine the energy density compensation value of the point to be compensated based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and the preset energy density value.

[0054] See also Figure 2 Specifically, the first scanning area Z1, the second scanning area Z2, the thermal equilibrium temperature, and the highest annealing temperature of the point to be compensated can all be obtained through simulation systems in related technologies or through multiple experiments, which will not be elaborated here.

[0055] Specifically, there are various implementation methods for determining the energy density compensation value of the point to be compensated based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and the preset energy density value. These methods are not limited here. Typical examples will be described below, but will not be elaborated on here.

[0056] Specifically, the preset energy density value can be set by those skilled in the art according to the actual situation, and is not limited here.

[0057] It should be noted that the scanning method used in the wafer laser annealing process can be set by those skilled in the art according to the actual situation, and is not limited here. For example, Figure 4 This is a schematic diagram illustrating a scanning method provided by an embodiment of the present invention. See also... Figure 4 The wafer laser annealing process includes multiple scanning paths X. After the laser module completes scanning along the first scanning path X1, it stops outputting laser light and then moves along the path shown by the dotted line to the initial scanning point of the second scanning path X2. It then moves along the path shown by the dotted line to the initial scanning point of the third scanning path X3 and moves along the third scanning path X3. This process continues, completing the laser scanning of each scanning path from left to right. Figure 5 This is a schematic diagram illustrating another scanning method provided by an embodiment of the present invention. See also... Figure 5 The wafer laser annealing process includes multiple scanning paths X. After the laser module completes scanning along the first scanning path X1, it stops outputting laser light and then moves along the path shown by the dotted line to the initial scanning point of the second scanning path X2. It then scans along the second scanning path X2, stops outputting laser light, and moves along the path shown by the dotted line to the initial scanning point of the third scanning path X3. This process continues, alternating between left-to-right and right-to-left scanning of each scanning path. It can be understood that any scanning method includes multiple scanning paths, each comprising a first scanning region and a second scanning region. By performing energy density compensation on each point within each first scanning region, the actual maximum annealing temperature of each point in that region can be increased, thereby increasing the probability of effective annealing and ultimately increasing the effective annealing area of ​​the wafer.

[0058] S220. Determine the actual energy density value of the point to be compensated based on the energy density compensation value and the preset energy density value.

[0059] Specifically, the actual energy density value can be obtained by adding the energy density compensation value and the preset energy density value.

[0060] S230. At the point to be compensated, control the laser module to output laser with an energy density value equal to the actual energy density value.

[0061] The laser annealing method provided in this invention determines the energy density compensation value of the point to be compensated based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and the preset energy density value. This makes the method of obtaining the energy density compensation value simple and the compensation effect good, which is conducive to significantly increasing the effective annealing area and thus improving the device yield.

[0062] Figure 6 This is a flowchart of another laser annealing method provided in an embodiment of the present invention. This embodiment is an optimization based on the above embodiments. See also... Figure 6 The method specifically includes the following steps:

[0063] S310. Determine the association relationship of PD(v,pd,s) based on the association relationships of T2(v,pd), T1(v,pd,s), and PD(T1,T2).

[0064] Where T2 is the thermal equilibrium temperature, T1 is the highest annealing temperature of the point to be compensated, PD is the energy density compensation value of the point to be compensated, v is the scanning speed of the laser module, pd is the power density of the laser module, and s is the distance between the point to be compensated and the initial scanning point, which refers to the straight-line distance between the two points.

[0065] Specifically, the correlations between T2(v, pd) and T1(v, pd, s) can be obtained through the aforementioned simulation system or through multiple experiments, without limitation here. Optionally, temperature field simulation can be used to obtain the correlations between T2(v, pd) and T1(v, pd, s). Optionally, temperature field simulation can also be used to obtain the distance s0 between the initial thermal equilibrium point and the initial scanning point. It is understood that obtaining the correlations between T2(v, pd) and T1(v, pd, s) through temperature field simulation technology eliminates the need for extensive experiments to determine these correlations, thus saving costs and shortening the cycle for determining the aforementioned relationships. It is also understood that during the laser module scanning process, once the scanning speed v and power density pd of the laser module are determined, substituting them into the correlations between T2(v, pd) and T1(v, pd, s) can determine the correlation between T1-s and T2, such as... Figure 8 As shown, the specific locations of the first scanning area, the second scanning area, and the point to be compensated can be quickly determined. It should be noted that the specific implementation methods for temperature field simulation can be executed by those skilled in the art based on relevant technologies, and are not limited here.

[0066] Specifically, the specific relationships of PD(T1, T2) can be set by those skilled in the art according to the actual situation, and are not limited here.

[0067] Optionally, the PD(T1, T2) association includes:

[0068] Wherein, PD0 is the preset energy density value. This simplifies the method of obtaining the energy density compensation value PD at the point to be compensated. Specifically, the methods for obtaining the specific values ​​of v, pd, and s corresponding to the point to be compensated can be set by those skilled in the art according to actual circumstances, and are not limited here.

[0069] Optionally, the PD(T1, T2) association may also include:

[0070] Wherein, PD0 is the preset energy density value, and a is a positive integer. Specifically, the specific value of a can be set by those skilled in the art according to actual conditions, and is not limited here. Optionally, the specific method for determining a is as follows: according to... The theoretical energy density compensation value PD′ is determined. Then, the theoretical actual energy density value of the point to be compensated is determined based on the theoretical energy density compensation value and the preset energy density value. At the point to be compensated, the laser module is controlled to output a laser with an energy density value of the theoretical actual energy density value. Then, a is determined based on the highest annealing temperature at the point to be compensated, or based on the distribution of effective annealing points.

[0071] Optionally, the method may further include: according to The PD(v, pd, s) correlation is transformed into the PD(v, pd, t) correlation, where t represents time. This facilitates time-based control of the laser module output.

[0072] S320. Determine the energy density compensation value based on the preset energy density value and the specific values ​​of v, pd, and s corresponding to the point to be compensated.

[0073] Specifically, by substituting the preset energy density value PD0, and the v, pd, and s corresponding to the point to be compensated into the PD(v, pd, s) correlation, the energy density compensation value corresponding to the point to be compensated can be determined.

[0074] S330. Determine the actual energy density value of the point to be compensated based on the energy density compensation value and the preset energy density value of the point to be compensated in the compensation area.

[0075] S340. At the point to be compensated, control the laser module to output a laser with an energy density value equal to the actual energy density value.

[0076] Optionally, the laser module includes a first laser. S340 specifically includes: controlling the first laser to output a laser with an energy density value equal to the actual energy density value at the point to be compensated.

[0077] It is understandable that directly outputting a laser with an energy density value equal to the actual energy density value through a single laser (i.e., the first laser) can simplify the structure of the laser module and help reduce costs.

[0078] Optionally, the laser module includes a first laser and a second laser. S240 specifically includes: at the point to be compensated, controlling the first laser to output a laser with an energy density value of a preset energy density value, and controlling the second laser to output a laser with an energy density value of the energy density compensation value of the point to be compensated.

[0079] Specifically, the first laser continuously outputs a laser with a fixed energy density throughout the entire scanning process. Its output remains unchanged and is relatively stable, which helps to improve the stability of the laser energy received by the wafer during the entire laser scanning process.

[0080] S250. At each non-compensation point in the non-compensation zone, control the laser module to output a laser with an energy density value of a preset energy density value.

[0081] Specifically, each point in the second scan area is a point that is not to be compensated.

[0082] Optionally, the laser module includes a first laser. S250 specifically includes: controlling the first laser to output laser light with an energy density value of a preset energy density value at each non-compensation point in the non-compensation region.

[0083] Optionally, the laser module includes a first laser and a second laser. S250 specifically includes: at each non-compensation point in the non-compensation area, controlling the first laser to output a laser with an energy density value of a preset energy density value, and controlling the second laser to stop outputting.

[0084] Based on the above technical solutions, optional additional steps include: inspecting the wafer to determine the effective annealing area and the ineffective annealing area.

[0085] Specifically, the effect can be verified by combining laser annealing process testing methods, such as sheet resistance testing and device performance testing, to detect effective and ineffective annealing areas, and further correct the energy density compensation value of ineffective annealing areas to further increase the effective annealing area.

[0086] To clearly demonstrate that the laser annealing method provided in this application can effectively improve the problem of small effective annealing area caused by temperature accumulation effect in the prior art, relevant verification experiments were conducted, and the experimental results are as follows: Figure 7 This is a correspondence diagram of s-T1 and s-T2 provided in an embodiment of the present invention. Figure 9 This is a correspondence diagram of s-(T2-T1) provided in an embodiment of the present invention. Figure 9 This is a correspondence diagram of s-PD provided in an embodiment of the present invention. Figure 10 This is a graph showing the correspondence between s and the actual maximum annealing temperature, provided by an embodiment of the present invention. Figure 11 This is a graph showing the correspondence between scanning speed and influence range provided in an embodiment of the present invention. See also... Figures 7-10 , Figures 7-10 The horizontal axis represents the distance between the point to be compensated and the initial scan point. Figure 7 The vertical axis represents the highest annealing temperature at each point in the first scan area and the thermal equilibrium temperature in the second scan area. Figure 8 The vertical axis represents the difference between the thermal equilibrium temperature and the maximum annealing temperature. Figure 9 The vertical axis represents the energy density compensation value. Figure 10 The vertical axis represents the actual highest annealing temperature. (Comparison) Figure 7 and Figure 10 It can be seen that without compensation, the difference between the highest annealing temperature and the thermal equilibrium temperature of each point to be compensated in the first scanning area is large, and the length of the first scanning area is large, about 1.6 mm. After compensation, the difference between the actual highest annealing temperature and the thermal equilibrium temperature is small, and the area where the actual highest annealing temperature is lower than the thermal equilibrium temperature is small. Figure 11 The horizontal axis represents the scanning speed of the laser module, and the vertical axis represents the influence range, i.e., the distance between the thermal equilibrium point and the initial scanning point. Figures 7-11 It is understood that the laser annealing method provided in this application improves the range of influence of temperature accumulation effect by about one order of magnitude, significantly increases the effective annealing area, and greatly improves the device yield.

[0087] Figure 12 This is a schematic diagram of a laser annealing apparatus provided in an embodiment of the present invention. See also... Figure 12 The laser annealing device is used to compensate the output energy density value of the laser module during annealing of each point to be compensated in the area to be compensated, so that the highest annealing temperature of the area to be compensated is the same as the thermal equilibrium temperature of the uncompensated area.

[0088] Based on the above technical solution, optionally, the laser annealing device includes: an energy density compensation value determination module 110, used to determine the energy density compensation value of the point to be compensated based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and a preset energy density value; an actual energy density value determination module 120, used to determine the actual energy density value of the point to be compensated based on the energy density compensation value and the preset energy density value; and a laser output control module 130, used to control the laser module to output a laser with an energy density value equal to the actual energy density value.

[0089] Optionally, the energy density compensation value determination module 110 is specifically used to determine the PD(v,pd,s) correlation relationship based on the T2(v,pd) correlation relationship, the T1(v,pd,s) correlation relationship, and the PD(T1,T2) correlation relationship; and to determine the energy density compensation value based on the preset energy density value and the specific values ​​of v, pd, and s corresponding to the point to be compensated; wherein, T2 is the thermal equilibrium temperature, T1 is the highest annealing temperature of the point to be compensated, PD is the energy density compensation value of the point to be compensated, v is the scanning speed of the laser module, pd is the power density of the laser module, and s is the distance between the point to be compensated and the initial scanning point.

[0090] Optionally, the PD(T1, T2) association includes: Wherein, PD0 is the preset energy density value.

[0091] Optionally, the laser annealing apparatus further includes: an association conversion module, used to... Transform the PD(v, pd, s) association into the PD(v, pd, t) association; where t is time.

[0092] Optionally, the laser annealing device further includes: a correlation determination module, used to obtain the correlation relationship of T2(v, pd) and the correlation relationship of T1(v, pd, s) by using temperature field simulation.

[0093] Optionally, the laser module includes a first laser; the laser output control module 130 is specifically used to control the first laser to output a laser with an energy density value equal to the actual energy density value at the point to be compensated.

[0094] Optionally, the laser module includes a first laser and a second laser. The laser output control module 130 is specifically used to control the first laser to output a laser with an energy density value of a preset energy density value at the point to be compensated, and to control the second laser to output a laser with an energy density value of the energy density compensation value of the point to be compensated.

[0095] Optionally, the laser output control module 130 is also used to control the laser module to output a laser with an energy density value of a preset energy density value at each non-compensation point in the non-compensation point area.

[0096] The laser annealing apparatus of this invention can be used to perform the laser annealing method provided in the above embodiments, and has corresponding functions and beneficial effects.

[0097] Figure 13 This is a schematic diagram of the structure of a laser annealing device provided in an embodiment of the present invention. See also... Figure 13 The laser annealing equipment includes: a controller 210 and a laser module 220 electrically connected to each other; the laser module 220 is used to output laser in response to the control of the controller 210; the controller 210 includes a memory and a processor, wherein the memory stores a computer program, and when the program is executed by the processor, it implements the following method:

[0098] During the annealing of each point in the area to be compensated, the output energy density value of the compensation laser module 220 is used to make the highest annealing temperature of the area to be compensated the same as the thermal equilibrium temperature of the uncompensated area; wherein, the objects to be annealed include the area to be compensated and the uncompensated area.

[0099] The controller in the laser annealing equipment provided in Embodiment 4 of the present invention can be used to execute the laser annealing method provided in the above embodiments, and has corresponding functions and beneficial effects.

[0100] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, combinations, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A laser annealing method, characterized in that, The object to be annealed includes a region to be compensated and a region not to be compensated; the laser annealing method includes: During annealing of each point in the region to be compensated, the output energy density of the compensation laser module is adjusted so that the highest annealing temperature of the region to be compensated is the same as the thermal equilibrium temperature of the uncompensated region. During annealing of each compensation point in the compensation zone, the output energy density value of the compensation laser module is adjusted to ensure that the highest annealing temperature of the compensation zone is the same as the thermal equilibrium temperature of the uncompensated zone, including: The energy density compensation value of the point to be compensated is determined based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and the preset energy density value. The actual energy density value of the point to be compensated is determined based on the energy density compensation value and the preset energy density value. At the point to be compensated, the laser module is controlled to output a laser with an energy density value equal to the actual energy density value.

2. The laser annealing method according to claim 1, characterized in that, Determining the energy density compensation value of the point to be compensated based on the thermal equilibrium temperature, the highest annealing temperature of the point to be compensated, and the preset energy density value includes: according to Relationships Relationships and Determining the relationship Relationship; Based on the preset energy density value and the point to be compensated, The specific value determines the energy density compensation value; in, The thermal equilibrium temperature is... The highest annealing temperature at the point to be compensated. The energy density compensation value for the point to be compensated. The scanning speed of the laser module is [missing information]. The power density of the laser module, The distance between the point to be compensated and the initial scan point.

3. The laser annealing method according to claim 2, characterized in that, The The relationships include: ; in, The preset energy density value.

4. The laser annealing method according to claim 2, characterized in that, Also includes: according to The Relationship conversion Relationship; among which, For time.

5. The laser annealing method according to claim 2, characterized in that, According to Relationships Relationships and Determining the relationship The correlation also includes: obtaining data through temperature field simulation. Relationships Relationship.

6. The laser annealing method according to claim 1, characterized in that, The laser module includes a first laser; at the point to be compensated, controlling the laser module to output a laser with an energy density value equal to the actual energy density value includes: At the point to be compensated, the first laser is controlled to output a laser with an energy density value equal to the actual energy density value.

7. The laser annealing method according to claim 1, characterized in that, The laser module includes a first laser and a second laser. At the point to be compensated, controlling the laser module to output a laser with an energy density value equal to the actual energy density value includes: At the point to be compensated, the first laser is controlled to output a laser with an energy density value equal to the preset energy density value, and the second laser is controlled to output a laser with an energy density value equal to the energy density compensation value of the point to be compensated.

8. The laser annealing method according to claim 1, characterized in that, Also includes: At each non-compensation point in the non-compensation zone, the laser module is controlled to output laser light with an energy density value equal to the preset energy density value.

9. A laser annealing apparatus, characterized in that, include: A controller and a laser module are electrically connected to each other; the laser module is used to output a laser in response to the control of the controller. The controller includes a memory and a processor, wherein the memory stores a computer program that, when executed by the processor, implements the method as described in any one of claims 1-8.

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