Semiconductor device, method for manufacturing the same, and substrate

Abstract

Embodiments relate to semiconductor devices, methods for manufacturing the same, and substrates. The semiconductor device of the embodiment comprises: an insulating component; a light receiving element mounted on the insulating component; a light emitting element optically coupled to the light receiving element; a first metal terminal disposed on the back surface of the insulating component and electrically connected to the light emitting element; a switch element mounted on the insulating component via a metal pad; and a second metal terminal disposed on the back surface of the insulating component. The output of the light receiving element is electrically connected to a control electrode of the switch element. The second metal terminal is electrically connected to the metal pad. In a first direction from the back surface toward the surface, the insulating component has a first thickness, the metal pad has a second thickness, and the second metal terminal has a third thickness. The first thickness is thinner than a thickness obtained by adding the second thickness to the third thickness.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2021-100151 (filing date: June 16, 2021), and the present application incorporates the entire contents of the basic application by reference. Technical Field

[0002] Embodiments relate to a semiconductor device, a method for manufacturing the same, and a substrate. Background Art

[0003] Semiconductor devices that transmit high-frequency signals are required to have improved frequency characteristics. For example, in a photorelay including a light-emitting element and a light-receiving element that are optically coupled, it is desired to reduce the impedance between output terminals and improve high-frequency transmission characteristics. Summary of the invention

[0004] Embodiments provide a semiconductor device having improved high frequency characteristics, a method for manufacturing the same, and a substrate.

[0005] A semiconductor device according to an embodiment includes: an insulating component; a light receiving element mounted on a surface of the insulating component; a light emitting element mounted on the light receiving element and optically coupled to the light receiving element; a first metal terminal provided on the back surface of the insulating component opposite to the surface and electrically connected to the light emitting element; a switch element mounted on the surface of the insulating component via a metal pad; and a second metal terminal provided on the back surface of the insulating component. The switch element and the light receiving element are arranged side by side on the surface of the insulating component. The output of the light receiving element is electrically connected to a control electrode of the switch element. The second metal terminal is electrically connected to the switch element via the metal pad. The insulating component has a first thickness in a first direction from the back surface toward the surface, the metal pad has a second thickness in the first direction, and the second metal terminal has a third thickness in the first direction. The first thickness is thinner than a thickness obtained by adding the second thickness to the third thickness.

[0006] The substrate used in the manufacture of the semiconductor device comprises: a sheet-shaped insulating component, having a first area including a plurality of the first metal terminals, a plurality of the second metal terminals and a plurality of the metal pads, and a second area surrounding the first area and having the first thickness in the first direction; and at least one resin layer, arranged on the second area of ​​the sheet-shaped insulating component, having a thickness in the first direction that is thicker than the first thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 A schematic plan view and a schematic cross-sectional view showing a semiconductor device according to an embodiment.

[0008] Figure 2 is a circuit diagram showing the configuration of a semiconductor device according to an embodiment.

[0009] Figure 3 (a) to (c) are schematic diagrams showing components of a semiconductor device according to an embodiment.

[0010] Figure 4 (a) and (b) are other schematic diagrams showing the substrate according to the embodiment.

[0011] Figure 5 (a)~ Figure 6 (b) is a schematic diagram showing a manufacturing process of a semiconductor device according to an embodiment.

[0012] Figure 7 (a) and (b) are schematic diagrams showing substrates according to modified examples of the embodiment.

[0013] Figure 8 (a) and (b) are schematic diagrams showing substrates according to other modified examples of the embodiment. DETAILED DESCRIPTION

[0014] Hereinafter, the embodiments will be described with reference to the accompanying drawings. The same parts in the drawings are marked with the same numbers and their detailed descriptions are appropriately omitted, and different parts are described. Among them, the accompanying drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each part, the ratio of the size between the parts, etc. are not necessarily the same as the actual ones. In addition, even when representing the same parts, there are cases where the mutual sizes and ratios are represented differently according to the drawings.

[0015] Furthermore, the configuration and structure of each part are described using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are orthogonal to each other and represent the X direction, Y direction, and Z direction, respectively. In addition, there is a case where the Z direction is described as the upper direction and the opposite direction thereof is described as the lower direction.

[0016] Figure 1 as well as Figure 2 It is a schematic diagram showing a semiconductor device 1 according to an embodiment.

[0017] Figure 1 1 and 2 are a schematic plan view and a schematic cross-sectional view showing a semiconductor device 1 according to an embodiment. Figure 2 It is a circuit diagram showing the configuration of a semiconductor device 1 according to the embodiment.

[0018] The semiconductor device 1 is, for example, a photorelay and includes an insulating member 10 , a light receiving element 20 , a light emitting element 30 , a switching element 40 a , and a switching element 40 b .

[0019] The insulating member 10 is, for example, an insulating resin sheet. The insulating member 10 is made of, for example, polyimide. The thickness of the insulating member 10 in the direction from the back surface toward the front surface (Z direction) is, for example, 50 micrometers (μm).

[0020] For example, bonding pads 13a, 13b, and mount pads 15a, 15b, and 17 are provided on the surface of the insulating member 10. The bonding pads 13a, 13b, and mount pads 15a, 15b, and 17 are, for example, metal layers containing copper. The thickness of each of the bonding pads 13a, 13b, and mount pads 15a, 15b, and 17 in the Z direction is, for example, 30 μm.

[0021] The bonding pads 13a and the bonding pads 13b are arranged in, for example, the Y direction. The mounting pads 15a and the mounting pads 15b are arranged in, for example, the Y direction.

[0022] The bonding pad 13a and the mounting pad 15a are arranged, for example, in the X direction. The bonding pad 13b and the mounting pad 15b are arranged, for example, in the X direction.

[0023] The mounting pad 17 is provided, for example, between the bonding pad 13 a and the mounting pad 15 a , and between the bonding pad 13 b and the mounting pad 15 b .

[0024] The back surface of the insulating member 10 is provided with control-side terminals 50a and 50b and output-side terminals 60a and 60b (see Figure 3 (c) The control terminals 50a and 50b and the output terminals 60a and 60b are metal layers containing copper, for example. The thickness of each of the control terminals 50a and 50b and the output terminals 60a and 60b in the Z direction is, for example, 30 μm.

[0025] The control side terminal 50a is arranged to be opposite to the bonding pad 13a via the insulating component 10. The control side terminal 50a is electrically connected to the bonding pad 13a via a via contact 53 provided on the insulating component 10. The via contact 53, for example, includes the same material as the control side terminal 50a. The via contact 53, for example, includes copper. Other via contacts are also provided in the same manner.

[0026] The control-side terminal 50b is provided so as to face the bonding pad 13b via the insulating member 10. The control-side terminal 50b is also electrically connected to the bonding pad 13b via a via contact (not shown).

[0027] The output terminal 60a is provided to face the mounting pad 15a via the insulating member 10. The output terminal 60a is electrically connected to the mounting pad 15a via a via contact 63 provided on the insulating member 10. The output terminal 60a is electrically connected to the mounting pad 15a via a plurality of via contacts 63, for example.

[0028] The output-side terminal 60b is provided so as to face the mounting pad 15b via the insulating member 10. The output-side terminal 60b is also electrically connected to the mounting pad 15b via a via contact (not shown).

[0029] The light receiving element 20 is mounted on the mounting pad 17 via a connecting member 23. The connecting member 23 is, for example, solder or conductive paste. The light emitting element 30 is, for example, mounted on the mounting pad 17 via a connecting member 35 having light transmissivity (see Figure 5 (b)) is mounted on the light receiving element 20 and optically coupled to the light receiving element 20. The light receiving element 20 includes, for example, a silicon photodiode. The light emitting element 30 is, for example, a light emitting diode (LED).

[0030] The switching elements 40a and 40b are mounted on the mounting pads 15a and 15b, respectively, via the connection member 43. The connection member 43 is, for example, solder or conductive paste.

[0031] The switch elements 40a and 40b are, for example, vertical MOSFETs having a drain on the back side and a source on the front side. The switch elements 40a and 40b are mounted so that the back sides face the mounting pads 15a and 15b, respectively. The switch element 40a is electrically connected to the output side terminal 60a via the mounting pad 15a and the via contact 63. The switch element 40b is electrically connected to the output side terminal 60b via the mounting pad 15b and the via contact (not shown).

[0032] like Figure 1 As shown, the light receiving element 20 is electrically connected to the switch elements 40a and 40b via metal wires (see Figure 2 ). The switch element 40a and the switch element 40b are electrically connected via other metal wires (see Figure 2 ).

[0033] The light emitting element 30 is electrically connected to the bonding pads 13a and 13b via another metal wire (see Figure 2 ). The light emitting element 30 is electrically connected to the control-side terminal 50a via the bonding pad 13a and the via contact 53. In addition, the light emitting element 30 is electrically connected to the control-side terminal 50b via the bonding pad 13b and the via contact (not shown).

[0034] like Figure 1As shown, a resin component 70 is provided on the surface side of the insulating component 10. The resin component 70 is, for example, epoxy resin. The resin component 70 is, for example, non-translucent. The resin component 70 seals the light receiving element 20, the light emitting element 30, the switch elements 40a, 40b, and each metal wire on the insulating component 10. The light emitting element 30 is sealed on the light receiving element 20 by the resin component 33. The resin component 70 is provided to cover the resin component 33. The resin component 33 is, for example, silicone.

[0035] Thus, the semiconductor device 1 has a structure in which the light receiving element 20 , the light emitting element 30 , and the switching elements 40 a and 40 b are sealed in a resin package, and the control-side terminal 50 and the output-side terminal 60 are provided on the outside of the resin package.

[0036] In the semiconductor device 1, the resin member 70 is provided so as to be in contact with the insulating member 10 between the pads and at the outer edge of the insulating member 10. Thus, the close contact between the insulating member 10 and the resin member 70 is improved, and the reliability of the light receiving element 20, the light emitting element 30, and the switch elements 40a and 40b sealed by the resin member 70 can be improved. In addition, it is possible to achieve a configuration in which metal other than the control terminal 50 and the output terminal 60 is not exposed to the outside of the resin package, and for example, in the installation using a connecting member such as cream solder, the intrusion of the connecting member into the resin package due to a capillary phenomenon and the creeping of the solder can be prevented.

[0037] like Figure 2 As shown, the light receiving element 20 includes a plurality of photodiodes 25 and a control circuit 27. The plurality of photodiodes 25 are connected in series. The photodiodes 25 are configured to detect light from the light emitting element 30. The control circuit 27 is, for example, a waveform shaping circuit. In addition, the control circuit 27 may also be a discharge circuit, a protection circuit, etc. The output of the photodiode 25 is output via the control circuit 27.

[0038] The source S of the switching element 40a is connected to the source S of the switching element 40b. The cathode side output of the photodiode 25 is connected to the source S of the switching elements 40a and 40b via the control circuit 27, for example. In addition, the anode side output of the photodiode 25 is connected to the gate G of the switching elements 40a and 40b, for example, via the control circuit 27. The output side terminal 60a is connected to the drain D of the switching element 40a, and the output side terminal 60b is connected to the drain D of the switching element 40b.

[0039] A control signal for controlling the electrical conduction between the output terminal 60a and the output terminal 60b is input to the control side terminals 50a and 50b, for example. The light emitting element 30 emits a light signal corresponding to the control signal, and the light receiving element 20 detects the light signal emitted from the light emitting element 30 and outputs a control signal corresponding to the light signal to the switch elements 40a and 40b.

[0040] With the semiconductor device 1, for example, when the transmission path of the high-frequency signal is controlled to be on and off, it can be expected that the pass characteristics of the high-frequency signal between the output terminal 60a and the output terminal 60b can be improved. In the semiconductor device 1, by making the thickness of the insulating member 10 in the Z direction thin, the impedance between the switching element 40a and the output terminal 60a can be reduced, and the impedance between the switching element 40b and the output terminal 60b can be reduced. As a result, the pass characteristics of the high-frequency signal between the output terminal 60a and the output terminal 60b can be improved.

[0041] Figure 3 (a) to (c) are schematic diagrams showing the base member 5 of the semiconductor device 1 according to the embodiment. The light receiving element 20, the light emitting element 30, and the switch elements 40a and 40b (see Figure 1 ) is mounted on the surface side of the base member 5.

[0042] Figure 3 (a) is a top view showing bonding pads 13a, 13b, mounting pads 15a, 15b, and 17 on the surface side of the insulating member 10. The bonding pads 13a, 13b, mounting pads 15a, 15b, and 17 are formed, for example, by patterning a copper foil provided on the surface of the insulating member 10. The bonding pads 13a, 13b, mounting pads 15a, 15b, and 17 may also be a laminated structure in which a gold (Au) layer is provided on the surface for oxidation prevention, for example.

[0043] The bonding pads 13a and 13b are arranged in the Y direction. The mounting pads 15a and 15b are arranged in the Y direction. The mounting pad 17 is provided between the bonding pad 13a and the mounting pad 15a, and between the bonding pad 13b and the mounting pad 15b. In addition, the embodiment is not limited to this arrangement.

[0044] Figure 3 (b) is along Figure 3 (a) is a cross-sectional view taken along line AA. The insulating member 10 has a thickness T1 in the Z direction, for example. The bonding pads 13a, 13b, the mounting pads 15a, 15b, and 17 each have a thickness T2 in the Z direction. In addition, the control terminals 50a, 50b, and the output terminals 60a, 60b provided on the back surface of the insulating member 10 each have a thickness T3 in the Z direction.

[0045] The insulating member 10 is provided with via contacts 53 and 63. The via contacts 53 and 63 are provided in via holes that communicate from the back side to the front side of the insulating member 10. The via contacts 53 and 63 are formed by filling the via holes with metal such as copper using plating.

[0046] The control terminal 50a is electrically connected to the bonding pad 13a through the via contact 53. The output terminal 60a is electrically connected to the mounting pad 15a through the via contact 63. The control terminal 50b and the output terminal 60b are also electrically connected to the bonding pad 13b and the mounting pad 15b through the via contact.

[0047] Figure 3 (c) is a top view showing control-side terminals 50a, 50b, and output-side terminals 60a and 60b provided on the back side of the insulating component 10. The control-side terminals 50a, 50b, and the output-side terminals 60a and 60b are formed, for example, by patterning a copper foil provided on the back side of the insulating component 10. The control terminal 50b and the output-side terminal 60b have the same thickness T3 in the Z direction as the control terminal 50a and the output-side terminal 60a. The control-side terminals 50a, 50b, and the output-side terminals 60a and 60b may also be a laminated structure in which a gold (Au) layer is provided on the surface for oxidation prevention, for example.

[0048] The control terminals 50a and 50b are arranged, for example, in the Y direction. The output terminals 60a and 60b are arranged, for example, in the Y direction. The control terminal 50a and the output terminal 60a are arranged, for example, in the X direction. The control terminal 50b and the output terminal 60b are arranged, for example, in the X direction.

[0049] The control-side terminal 50a is provided so as to face the bonding pad 13a via the insulating member 10. The control-side terminal 50b is provided so as to face the bonding pad 13b via the insulating member 10.

[0050] The output-side terminal 60a is provided so as to face the mounting pad 15a via the insulating member 10. The output-side terminal 60b is provided so as to face the mounting pad 15b via the insulating member 10.

[0051] The thickness T1 of the insulating member 10 is preferably set thin so that the impedance between the switching element 40a and the output-side terminal 60a and the impedance between the switching element 40b and the output-side terminal 60b become small, for example.

[0052] The bonding pads 13a and 13b are set to ensure the metal wire (see Figure 1Therefore, it is preferable that the thickness T2 in the Z direction of the bonding pads 13a and 13b provided on the surface side of the insulating member 10 is set thicker than a predetermined thickness capable of ensuring bonding strength.

[0053] For example, in order to balance the stress applied to the insulating member 10, it is preferred that the thickness T3 of each of the control-side terminals 50a, 50b and the output-side terminals 60a and 60b provided on the back side of the insulating member 10 is the same as the thickness T2 of the bonding pads 13a, 13b and the mounting pads 15a, 15b and 17. Here, "same" does not mean strict consistency, but includes substantially the same or substantially the same.

[0054] On the other hand, if the thickness T2 of the bonding pads 13a, 13b, the mounting pads 15a, 15b and 17 and the thickness T3 of the control-side terminals 50a, 50b and the output-side terminals 60a and 60b are too thick, it is difficult to connect the insulating member 10 and the metal layers provided on the front and back surfaces thereof (see Figure 4 (b)) The stacked structure is cut.

[0055] As a result, the thickness T1 of the insulating member 10 is preferably thinner than the thickness (T2+T3) obtained by adding the thickness T2 of each of the bonding pads 13a, 13b, the mounting pads 15a, 15b, and 17 to the thickness T3 of each of the control-side terminals 50a, 50b, and the output-side terminals 60a and 60b. Thus, the impedance between the switching element 40a and the output-side terminal 60a, and between the switching element 40b and the output-side terminal 60b can be reduced.

[0056] Furthermore, from the viewpoint of cutting the stacked structure, it is preferable that the thickness T2 and the thickness T3 are each thinner than the thickness T1 of the insulating member 10. In addition, the metal layer formed on the surface and the back surface of the insulating member 10 is formed at the same time, and the thickness T2 and the thickness T3 are the same. The thickness T1 of the insulating member 10 is, for example, 50 μm. The thickness T2 and the thickness T3 are, for example, 30 μm, respectively.

[0057] Figure 4 (a) and (b) are other schematic diagrams showing the substrate 100 used for manufacturing the semiconductor device 1 according to the embodiment. Figure 4 (a) is a plan view showing the entire substrate 100 . Figure 4 (b) is along Figure 4 (a) is a cross-sectional view taken along line BB.

[0058] like Figure 4 As shown in (a), the substrate 100 includes a first region 1R and a second region 2R. The second region 2R surrounds the first region 1R.

[0059] The first region 1R includes a plurality of bonding pads 13a, a plurality of bonding pads 13b, a plurality of mounting pads 15a, a plurality of mounting pads 15b, and a plurality of mounting pads 17. In addition, the first region 1R includes a plurality of control-side terminals 50a, a plurality of control-side terminals 50b, a plurality of output-side terminals 60a, and a plurality of output-side terminals 60b provided on the back side (not shown).

[0060] The bonding pads 13a, 13b, the mounting pads 15a, 15b, and 17 are maintained, for example. Figure 3 (a) and are arranged in the X direction and the Y direction respectively. Figure 3 (b) The arrangement shown in FIG. 2 is arranged in the X direction and the Y direction respectively.

[0061] The second region 2R includes, for example, a metal layer 115 and a resin layer 120. The metal layer 115 is, for example, left in the process of forming the bonding pads 13a, 13b, the mounting pads 15a, 15b, and 17 so as to surround the first region 1R. The resin layer 120 is provided on the metal layer 115 so as to surround the first region 1R. The metal layer 115 is, for example, a copper foil. The resin layer 120 includes, for example, polyimide. The metal layer 115 may also have a laminated structure in which a gold (Au) layer is formed on the surface of the copper foil, for example.

[0062] The metal layer 115 includes a region exposed between the first region 1R and the resin layer 120. The metal layer 115 includes a plurality of slits SL provided to surround the first region 1R. The slits SL are provided to extend along the outer edge of the first region 1R in the region where the metal layer 115 is exposed. The slits SL are provided, for example, to be located on a line surrounding the first region 1R (see Figure 6 (a)). In addition, the slits SL may be provided continuously at the four corners of the quadrilateral first region 1R so as to surround the four corners, for example.

[0063] like Figure 4 As shown in (b), the substrate 100 includes a sheet-like insulating member 110. The base member 5 is provided by cutting the first region 1R of the substrate 100. The insulating member 10 is provided by dividing the insulating member 110. The insulating member 110 includes polyimide. The metal layer 115 includes a region located between the insulating member 110 and the resin layer 120. The metal layer 115 has a thickness T2 in the Z direction. The slit SL is provided so as to communicate with the insulating member 110 from the surface of the metal layer 115.

[0064] A metal layer 117 and a resin layer 130 are provided on the back side of the insulating component 110. The metal layer 117 is provided in the second region 2R and surrounds the first region 1R. The control side terminals 50a, 50b and the output side terminals 60a and 60b are provided by patterning the metal layer 117. The resin layer 130 is provided on the metal layer 117. The metal layer 117 includes a region located between the insulating component 110 and the resin layer 130. The metal layer 117 has a thickness T3 in the Z direction. The metal layer 117 is, for example, a copper foil. The metal layer 117 may also have a laminated structure in which a gold (Au) layer is formed on the copper foil, for example.

[0065] The metal layer 117 has a region exposed between the first region 1R and the resin layer 130. The slits SL are also provided in the region where the metal layer 117 is exposed. The slits SL provided on the back side of the insulating member 110 are provided at positions facing the slits SL provided on the front side with the insulating member 110 interposed therebetween.

[0066] The resin layer 120 and the resin layer 130 are provided to suppress the warping and deformation of the substrate 100 caused by heat during mounting of the light receiving element 20 and the switch elements 40a and 40b and bonding of the metal wires, for example. In addition, by suppressing the warping and deformation of the substrate 100, the position accuracy during transportation can be improved.

[0067] Resin layer 120 has thickness TR1 in Z direction, and resin layer 130 has thickness TR2 in Z direction. Thickness TR1 of resin layer 120 and thickness TR2 of resin layer 130 are, for example, thicker than thickness T1 of insulating member 110. Thickness TR1 of resin layer 120 and thickness TR2 of resin layer 130 are, for example, 150 μm each.

[0068] The resin layer 120 and the resin layer 130 do not necessarily have the same thickness, and have thicknesses TR1 and TR2 adjusted to suppress warping of the substrate 100. For example, one of TR1 and TR2 may be 0 μm. In other words, the substrate 100 may have a configuration in which either the resin layer 120 or the resin layer 130 is provided.

[0069] Next, refer to Figure 5 (a)~ Figure 6 (b) A method for manufacturing the semiconductor device 1 will be described. Figure 5 (a)~ Figure 6 (b) is a schematic diagram showing a manufacturing process of the semiconductor device 1 according to the embodiment.

[0070] like Figure 5As shown in (a), the switch element 40a and the light receiving element 20 are mounted on the mounting pad 15a and the mounting pad 17 respectively provided on the insulating member 110. The switch element 40a and the light receiving element 20 are placed on the mounting pad 15a and the mounting pad 17 by means of, for example, cream solder or conductive paste, and fixed by reflow or solidification. The switch element 40b is mounted on the mounting pad 15b in a portion not shown.

[0071] like Figure 5 As shown in (b), the light emitting element 30 is mounted on the light receiving element 20. The light emitting element 30 is bonded to the light receiving element 20 via, for example, a connecting member 35. The light emitting element 30 radiates light from the back surface facing the light receiving element 20 toward the light receiving element 20. The connecting member 35 is, for example, a transparent resin layer that transmits the radiated light of the light emitting element 30.

[0072] like Figure 5 As shown in (c), the bonding pad 13a is electrically connected to the light emitting element 30 by the metal wire MW1 (see Figure 2 ). In addition, the light receiving element 20 and the switch element 40a are electrically connected by metal wires MW2 and MW3 (see Figure 2 ). The metal wires MW1, MW2 and MW3 are connected to the electrodes of each element by, for example, ultrasonic bonding.

[0073] In portions not shown, the bonding pad 13 b and the light emitting element 30 , the light receiving element 20 and the switch element 40 b , and the switch element 40 a and the switch element 40 b are also electrically connected via metal wires.

[0074] The light emitting element 30 is sealed on the light receiving element 20 by a resin member 33. The resin member 33 is formed by potting, for example.

[0075] When automatically bonding metal wires to electrodes of each element, if the warpage of the substrate 100 increases, the image recognition function of the camera is reduced, and bonding may fail. For example, if the warpage of the insulating component becomes larger than the focal depth within the camera's viewing angle, the accuracy of image recognition is reduced. In the substrate 100 according to the embodiment, the resin layers 120 and 130 (see Figure 4 (b)) Suppressing warping can avoid such inconvenience.

[0076] like Figure 5 As shown in (d), the resin member 70 is molded on the surface side of the insulating member 110. The resin member 70 is in close contact with the insulating member 110 and is formed to seal the light receiving element 20, the light emitting element 30, the switch elements 40a and 40b, and the metal wires MW1 to MW3.

[0077] like Figure 6 As shown in (a), the resin member 70 is formed on the surface side of the substrate 100. The resin member 70 is formed so as to cover the first region 1R of the substrate 100. For example, the resin member 70 is formed by vacuum forming.

[0078] like Figure 6 As shown in (b), the substrate 100 is cut, and the first region 1R where the resin member 70 is formed remains, while the second region 2R is removed. The substrate 100 is cut along the separation line CL along the slit SL.

[0079] Next, the first region 1R of the substrate 100 and the resin component 70 are cut, for example, in the X direction and the Y direction to separate the semiconductor device 1. The substrate 100 and the resin component are cut, for example, using a dicer. In the substrate 100 according to the embodiment, since no metal component is provided between the adjacent semiconductor devices 1 on the first region 1R, cutting is easy. In addition, no metal burrs or the like remain on the cut surface of the resin package after cutting.

[0080] Figure 7 (a) and (b) are schematic diagrams showing substrates 200 and 300 according to modified examples of the embodiment.

[0081] Figure 7 The substrate 200 shown in (a) has a plurality of first regions 1R. The resin layer 120 is provided in the second region 2R so as to surround the plurality of first regions 1R. The metal layer 115 includes a region extending between adjacent first regions 1R. In addition, the metal layer 117 (see FIG. 1 ) provided on the back side of the resin member 110 Figure 4 (b)) may also include a region extending between adjacent first regions 1R.

[0082] In this example, the region of the metal layer 115 extending between the first regions 1R can suppress the bending of the first region 1R. This is effective, for example, when the area of ​​the first region 1R is increased to increase the number of first semiconductor devices 1 provided in the first region 1R.

[0083] exist Figure 7 In the substrate 300 shown in (b), a plurality of resin layers 120 are provided in the second region 2R. The first region 1R is surrounded by resin layers 120a to 120d. Parts of the metal layer 115 are exposed in the space between the resin layer 120a and the resin layer 120b, the space between the resin layer 120b and the resin layer 120c, the space between the resin layer 120c and the resin layer 120d, and the space between the resin layer 120d and the resin layer 120a.

[0084] Such a configuration of the resin layer 120 may be more effective in suppressing the warping of the substrate 300 . In addition, a plurality of resin layers 130 may also be provided on the back side of the substrate 300 .

[0085] Figure 8 (a) and (b) are schematic diagrams showing a substrate 400 according to other modified examples of the embodiment. Figure 8 (a) is a plan view showing the entire substrate 400 . Figure 8 (b) is along Figure 8 (a) is a cross-sectional view taken along line CC.

[0086] like Figure 8 As shown in (a) and (b), the metal layers 115 and 117 are not provided in the second region 2R of the substrate 400. The resin layers 120 and 130 are provided directly on the insulating member 110. In addition, there is also a case where an adhesive is interposed to connect the resin layers 120 and 130 to the insulating member 110.

[0087] In this example, the resin member 70 (see Figure 6 (a)) The insulating member 110 is exposed between the resin layer 120 and the metal layers 115 and 117 are absent. This makes it easy to cut between the resin member 70 and the resin layer 120, and the substrate 400 is separated while leaving the portion of the first region 1R where the resin member 70 is formed.

[0088] Several embodiments of the present invention have been described, but these embodiments are only illustrative and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and their variations are included in the scope and purpose of the invention and are included in the invention described in the technical solution and its equivalent scope.

Claims

1. A semiconductor device, It is characterized in that have: Insulation parts; A light receiving element is mounted on the surface of the insulating component; A light emitting element is mounted on the light receiving element and optically coupled with the light receiving element; A first metal terminal is provided on the back surface of the insulating member opposite to the front surface and is electrically connected to the light emitting element; A switch element is mounted on the surface of the insulating component via a metal pad, is arranged side by side with the light receiving element, and is electrically connected to the light receiving element; as well as a second metal terminal, which is provided on the back surface of the insulating member and is electrically connected to the switching element via the metal pad; The insulating member has a first thickness in a first direction from the back surface toward the front surface, The metal pad has a second thickness in the first direction, The second metal terminal has a third thickness in the first direction, The first thickness is thinner than a thickness obtained by adding the second thickness to the third thickness, The second thickness and the third thickness are respectively thinner than the first thickness.

2. The semiconductor device according to claim 1, It is characterized in that The insulating member is a resin having the first thickness.

3. The semiconductor device according to claim 1, It is characterized in that The first metal terminal and the second metal terminal are in close contact with the back surface of the insulating component. The metal pad is in close contact with the surface of the insulating component.

4. The semiconductor device according to claim 1, It is characterized in that The first metal terminal has a thickness in the first direction that is the same as the third thickness.

5. The semiconductor device according to claim 1, It is characterized in that The switch element is connected to the metal pad via a conductive connection member. The second metal terminal is electrically connected to the metal pad via a via contact provided on the insulating member.

6. The semiconductor device according to claim 1, It is characterized in that Also available: a bonding pad disposed on the surface of the insulating component and electrically connected to the first metal terminal via another via contact disposed on the insulating component; and A metal wire electrically connects the light emitting element to the bonding pad.

7. The semiconductor device according to claim 1, It is characterized in that A resin member that seals the light receiving element, the light emitting element, the switch element, and the metal pad is further provided on the surface side of the insulating member.

8. A substrate used in the manufacture of a semiconductor device, wherein the semiconductor device include: Insulation parts; A light receiving element is mounted on the surface of the insulating component; A light emitting element is mounted on the light receiving element and optically coupled with the light receiving element; A first metal terminal is provided on the back surface of the insulating member opposite to the front surface and is electrically connected to the light emitting element; A switch element is mounted on the surface of the insulating member via a metal pad, is arranged in parallel with the light receiving element, and is electrically connected to the light receiving element; as well as a second metal terminal, which is provided on the back surface of the insulating member and is electrically connected to the switching element via the metal pad; The substrate is characterized in that it has: a sheet-like substrate including the insulating component; and at least one resin layer is disposed on the substrate, The substrate includes a first region and a second region, the first region includes a plurality of the first metal terminals, a plurality of the second metal terminals, and a plurality of the metal pads, the second region surrounds the first region, and the substrate has a first thickness in a first direction from the back side of the insulating component toward the surface, The resin layer is provided on the second region of the substrate and has a thickness in the first direction that is thicker than the first thickness. The plurality of metal pads each have a second thickness in the first direction, The plurality of second metal terminals each have a third thickness in the first direction, The first thickness is thinner than a thickness obtained by adding the second thickness to the third thickness, The second thickness and the third thickness are respectively thinner than the first thickness.

9. The substrate according to claim 8, It is characterized in that further comprising another resin layer provided in the second region on the back surface of the substrate, The resin layer is provided on the surface of the insulating member included in the sheet-like substrate. The second region includes a portion located between the resin layer and the other resin layer.

10. The substrate according to claim 9, It is characterized in that The invention further comprises a first metal layer provided between the substrate and the resin layer, and a second metal layer provided between the substrate and the other resin layer.

11. The substrate according to claim 10, It is characterized in that The first metal layer has the second thickness in the first direction, The second metal layer has the third thickness in the first direction.

12. The substrate according to claim 9, It is characterized in that The thickness of the resin layer in the first direction is the same as the thickness of the other resin layer in the first direction.

13. The substrate according to claim 8, It is characterized in that The substrate includes a plurality of the first regions, and the second region surrounds the plurality of the first regions.

14. The substrate according to any one of claims 8 to 13, It is characterized in that comprising a plurality of the resin layers, The plurality of resin layers are arranged to surround the first region.

15. A method for manufacturing a semiconductor device, wherein the semiconductor device include: Insulation parts; A light receiving element is mounted on the surface of the insulating component; A light emitting element is mounted on the light receiving element and optically coupled with the light receiving element; A first metal terminal is provided on the back surface of the insulating member opposite to the front surface and is electrically connected to the light emitting element; A switch element is mounted on the surface of the insulating member via a metal pad, is arranged in parallel with the light receiving element, and is electrically connected to the light receiving element; as well as a second metal terminal, which is provided on the back surface of the insulating member and is electrically connected to the switching element via the metal pad; The method for manufacturing a semiconductor device is characterized in that: A plurality of the light receiving elements and a plurality of the switch elements are mounted on a substrate including a base material and a resin layer provided on a second region of the base material and thicker than the base material, the base material including a first region and the second region, the first region including a plurality of the first metal terminals, a plurality of the second metal terminals and a plurality of the metal pads, the second region surrounding the first region, The light emitting elements are mounted on the plurality of light receiving elements respectively. The plurality of light receiving elements and the plurality of switch elements are electrically connected via metal wires, The plurality of light emitting elements are electrically connected to the plurality of first metal terminals respectively via other metal wires, forming a resin member that seals the plurality of light emitting elements, the plurality of light receiving elements, and the plurality of switch elements on the first region of the substrate, After separating the first region from the second region of the substrate, the first region and the resin component are cut to form a single piece of the semiconductor device including the insulating component, the light receiving element, the light emitting element, the switch element, the first metal terminal, and the second metal terminal. The insulating member has a first thickness in a first direction from the back surface toward the front surface, The metal pad has a second thickness in the first direction, The second metal terminal has a third thickness in the first direction, The first thickness is thinner than a thickness obtained by adding the second thickness to the third thickness, The second thickness and the third thickness are respectively thinner than the first thickness.

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