Quantum dots, quantum dot fabrication methods, optical components including quantum dots, and electronic devices including quantum dots

Abstract

Quantum dots, methods for fabricating quantum dots, optical components including the quantum dots, and electronic devices including the quantum dots are provided. Each quantum dot includes: a core, including indium (In) and argon (Al). 1 and A 2 ; and the shell, covering the core, wherein A 1 It is a V-group element, A 2 It is a group III element excluding indium, and its core consists of a first region and a second region covering the first region. The first region does not include a. 2 And includes indium and A 1 The second region includes indium and a 1 and A 2 And indium and A 2 They are alloyed together in the second region.

Description

Technical Field

[0001] This disclosure relates to a quantum dot, a method for preparing the quantum dot, an optical component including the quantum dot, and an electronic device including the quantum dot. Background Technology

[0002] Quantum dots can be used in optical components and various electronic devices for various optical functions such as light conversion and light emission. Quantum dots are nanoscale semiconductor crystals that exhibit quantum confinement effects and whose band gaps can be varied by controlling the size and composition of the nanocrystals. Therefore, quantum dots can emit light at various emission wavelengths.

[0003] Optical components incorporating such quantum dots can take the form of thin films (such as thin films patterned for each sub-pixel). Such optical components can also be used as color conversion components in devices that include various light sources.

[0004] Quantum dots can be used for a variety of purposes in various electronic devices. For example, quantum dots can also be used as emitters. To be used as emitters, quantum dots can be included in the emitter layer of a light-emitting device that includes a pair of electrodes and an emitter layer.

[0005] Currently, in order to achieve high-resolution optical components and electronic devices, it is necessary to develop quantum dots that emit blue light with a maximum emission wavelength equal to or less than about 490 nm, have a high photoluminescence quantum yield (PLQY), and do not contain cadmium, which is a toxic element. Summary of the Invention

[0006] Technical issues

[0007] A quantum dot, a method for preparing the quantum dot, an optical component including the quantum dot, and an electronic device including the quantum dot are provided.

[0008] Technical solution

[0009] According to one aspect, a quantum dot is provided, the quantum dot comprising:

[0010] Cores, including indium (In) and arsenic (A). 1 and A 2 ;as well as

[0011] The shell covers the core, in which...

[0012] A 1 It can be a V-family element.

[0013] A 2 It can be any group III element other than indium.

[0014] The core may include a first region and a second region covering the first region.

[0015] The first region may not include A. 2 And may include indium and A 1 ,and

[0016] The second region may include indium, A 1 and A 2 And indium and A 2 They can be alloyed together in the second region.

[0017] In the embodiment, A 1 It can be nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), or any combination thereof.

[0018] In one or more embodiments, A 2 It can be boron (B), aluminum (Al), gallium (Ga), thallium (Tl), or any combination thereof.

[0019] In one or more embodiments, the first region may include InN, InP, InAs, InSb, InNP, InNAs, InNSb, InPAs, or InPSb.

[0020] In one or more embodiments, the second region may include InGaN, InGaP, InGaAs, InGaSb, InGaNP, InGaNAs, InGaNSb, InGaPAs, InGaPSb, InAlN, InAlP, InAlAs, InAlSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InGaAlN, InGaAlP, InGaAlAs, InGaAlSb, InGaAlNP, InGaAlNAs, InGaAlNSb, InGaAlPAs, or InGaAlPSb.

[0021] In one or more embodiments, A 2 It can be introduced into the second region through a cation exchange reaction.

[0022] In one or more embodiments, A is included in the first region. 1 It can be combined with A, which is included in the second region. 1 same.

[0023] In one or more embodiments, A is included in the second region. 2 The concentration of A can have 2 The concentration gradient gradually increases along the direction from the interface between the first and second regions toward the surface of the core.

[0024] In one or more embodiments, the shell may include a group III-V semiconductor compound, a group II-VI semiconductor compound, or any combination thereof.

[0025] In one or more embodiments, the III-V semiconductor compound may include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs The group II-VI semiconductor compounds may include ZnS, ZnSe, ZnTe, ZnO, MgS, MgSe, ZnSeS, ZnSeTe, ZnSTe, MgZnS, MgZnSe, or any combination thereof.

[0026] In one or more embodiments, the shell may include: i) a first shell covering the core; and ii) a second shell covering the first shell. The first shell may include GaP, ZnSe, ZnSeS, or any combination thereof, and the second shell may include ZnS.

[0027] In one or more embodiments, the quantum dot can emit blue light with a maximum emission wavelength in the range of about 400 nm to about 490 nm.

[0028] In one or more embodiments, the core may further include a third region, i) covering the second region and ii) including A in addition to indium. 1 and A 2 .

[0029] According to another aspect, a method for preparing quantum dots is provided, the quantum dots comprising:

[0030] Cores, including indium (In) and arsenic (A). 1 and A 2 ;as well as

[0031] The shell covers the core, in which...

[0032] A 1 It can be a V-family element.

[0033] A2 It can be any group III element other than indium.

[0034] The core may include a first region and a second region covering the first region.

[0035] The first region may not include A. 2 And may include indium and A 1 ,and

[0036] The second region may include indium, A 1 and A 2 And indium and A 2 They can be alloyed together in the second region.

[0037] The method may include the following steps: providing indium (In) and A 1 The first particle;

[0038] By subjecting the first particle to a temperature in the range of 210°C to approximately 340°C, and containing A... 2 The precursor composition is contacted to form a mixture including In and A 1 and A 2 The core; and

[0039] It forms a shell that covers the core.

[0040] In the embodiments, a structure including In and A is formed. 1 and A 2 The steps of forming the core may include forming a second region of the core via a cation exchange reaction, in which the first particle is reacted with a nucleus containing A 2 Upon contact with the precursor composition, at least a portion of the indium cations of the first particle are affected by A. 2 Cation substitution.

[0041] In one or more embodiments, containing A 2 Precursors may include those containing A 2 Halides, containing A 2 Oxides, containing A 2 Nitrogen compounds, containing A 2 Antimonides, containing A 2 Nitrogen oxides, containing A 2 Sulfides, containing A 2 Halogen oxides, containing A 2 Halogen oxide hydrates, containing A 2 Nitrates, containing A 2 Nitrate salts, containing A 2 Sulfates, containing A 2 Sulfate salts, containing A 2 Amine derivatives, containing A 2 Hydrocarbon derivatives or any combination thereof.

[0042] According to another aspect, an optical component comprising quantum dots is provided.

[0043] According to another perspective, an electronic device incorporating quantum dots is provided.

[0044] In this embodiment, the electronic device may include:

[0045] Light source; and

[0046] Color conversion components are arranged in the path of light emitted from the light source.

[0047] Color conversion components may include quantum dots.

[0048] In one or more embodiments, the electronic device may include a light-emitting device comprising a first electrode, a second electrode facing the first electrode, and an emitting layer disposed between the first electrode and the second electrode. The light-emitting device may include quantum dots.

[0049] Technical effect

[0050] Because quantum dots are environmentally friendly, emit blue light with a maximum emission wavelength equal to or less than about 490 nm, and have excellent photoluminescence quantum yield (PLQY), they can provide high-quality optical components and high-quality electronic devices. Attached Figure Description

[0051] Figure 1 This is a schematic cross-sectional view of a quantum dot according to an embodiment.

[0052] Figure 2 This is a schematic cross-sectional view of a quantum dot in one or more embodiments.

[0053] Figure 3 This is a schematic diagram of the structure of an electronic device according to an embodiment.

[0054] Figure 4 This is a schematic diagram of the structure of a light-emitting device in one or more embodiments.

[0055] Figure 5 The graph shows the emission spectra of QD-1, QD-2, QD-3 and QD-A prepared in Synthetic Examples 1 to 3 and Comparative Synthetic Example A.

[0056] Figure 6 The graph shows the PL spectrum and (at 6V) EL spectrum of the QD-3 light-emitting device prepared in Example 1.

[0057] Figure 7Voltage-luminance curves and voltage-current density curves of the light-emitting device fabricated in Example 1 are shown.

[0058] Figure 8 The current density-current efficiency curves and current density-external quantum efficiency of the light-emitting device fabricated in Example 1 are shown. Detailed Implementation

[0059] Because this disclosure is capable of various modifications and can have various embodiments, specific embodiments will be shown in the accompanying drawings and described in detail in the specific embodiments. See below for reference in conjunction with the appendix. Figure 1 The effects and features of this disclosure, as well as methods for implementing them, will become clear from the detailed description of the embodiments described below. However, this disclosure is not limited to the following embodiments and can be implemented in various forms.

[0060] As used herein, the terms “first,” “second,” etc., are not used in a limiting sense, but rather for the purpose of distinguishing one component from another.

[0061] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “one,” and “the” are also intended to include the plural forms.

[0062] In this specification, it will be understood that terms such as “comprising,” “having,” “including,” and variations thereof are intended to describe the presence of the features or components disclosed in the specification and are not intended to exclude the possibility that one or more other features or components may be present or added. For example, unless otherwise limited, terms such as “comprising,” “having,” and variations thereof may refer to both the features or components described in the specification and other components.

[0063] As used herein, “Group II elements” can include Group IIA and Group IIB elements in the IUPAC periodic table, and examples of Group II elements can include magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), and mercury (Hg).

[0064] As used herein, “Group III elements” may include Group IIIA and Group IIIB elements in the IUPAC periodic table, and examples of Group III elements may include aluminum (Al), gallium (Ga), indium (In) and thallium (Tl).

[0065] As used herein, “Group V elements” can include Group VA and Group VB elements in the IUPAC periodic table, and examples of Group V elements can include nitrogen (N), phosphorus (P), arsenic (As) and antimony (Sb).

[0066] As used herein, “Group VI elements” may include Group VIA and Group VIB elements in the IUPAC periodic table, and examples of Group VI elements may include sulfur (S), selenium (Se), and tellurium (Te).

[0067] Figure 1 Description of the quantum dot 100 shown

[0068] Figure 1 This is a schematic cross-sectional view of a quantum dot according to an embodiment. Figure 1 Quantum dot 100 includes indium (In) and A 1 and A 2 The core 10 and the shell 15 covering the core 10. In Figure 1 In quantum dot 100, A 1 A1 is a group V element, while A2 is a group III element except for In.

[0069] In the embodiment, A 1 It can be nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), or any combination thereof.

[0070] In one or more embodiments, A 1 It can be nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), or any combination thereof.

[0071] In one or more embodiments, A 2 It can be boron (B), aluminum (Al), gallium (Ga), thallium (Tl), or any combination thereof.

[0072] In one or more embodiments, A 2 It can be boron (B), aluminum (Al), gallium (Ga), or any combination thereof.

[0073] In and A in core 10 2 The atomic ratio can range from approximately 0.01:0.99 to approximately 0.99:0.01. When In and A in nucleus 10... 2 When the atomic ratio is within the above range,

[0074] Core 10 may include a first region 11 and a second region 12 covering the first region 11.

[0075] For example, the first region 11 may be a spherical region having a radius corresponding to 10%, 15%, 20%, 25%, or 30% of the total length from the center of the core 10 to the surface of the core 10.

[0076] In one or more embodiments, the second region 12 may be a region of the core 10 other than the first region 11.

[0077] The first region 11 of core 10 may not include A. 2 And may include indium and A 1 .

[0078] For example, the first region 11 may include InN, InP, InAs, InSb, InNP, InNAs, InNSb, InPAs, or InPSb (or consist of InN, InP, InAs, InSb, InNP, InNAs, InNSb, InPAs, or InPSb).

[0079] The second region 12 of core 10 may include In, A 1 and A 2 And In and A 2 They can be alloyed together in the second region 12.

[0080] For example, the second region 12 may include InGaN, InGaP, InGaAs, InGaSb, InGaNP, InGaNAs, InGaNSb, InGaPAs, InGaPSb, InAlN, InAlP, InAlAs, InAlSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InGaAlN, InGaAlP, InGaAlAs, InGaAlSb, InGaAlNP, InGaAlNAs, InGaAlNSb, InGaAlPAs, or InGaAl PSb (or InGaN, InGaP, InGaAs, InGaSb, InGaNP, InGaNAs, InGaNSb, InGaPAs, InGaPSb, InAlN, InAlP, InAlAs, InAlSb, InAlNP, InAlNA s, InAlNSb, InAlPAs, InAlPSb, InGaAlN, InGaAlP, InGaAlAs, InGaAlSb, InGaAlNP, InGaAlNAs, InGaAlNSb, InGaAlPAs or InGaAlPSb).

[0081] Area 12, A 2The element may be introduced into the second region 12 via a cation exchange reaction. For example, the second region 12 of the core 10 is not formed by first synthesizing the first region 11 and then applying or growing the second region 12 on the surface of the first region 11. Therefore, the second region 12 is clearly distinguished from the shell 15 formed on the surface of the core 10 by coating or growth after the first synthesis of the core 10. For example, the domains or phases of the first region 11 are continuously connected to the domains or phases of the second region 12, but the domains or phases of the core 10 may be discontinuously separated from the domains or phases of the shell 15. For the method of forming the second region 12, etc., refer to the quantum dot synthesis method described in this specification.

[0082] In an embodiment, A is included in the first region 11. 1 It can be combined with A, which is included in the second region 12. 1 same.

[0083] In one or more embodiments, A is included in the second region 12. 2 The concentration of A can have 2 The concentration is along the direction from the interface between the first region 11 and the second region 12 toward the surface of the core 10. Figure 1 The concentration gradient gradually increases in the direction of "A".

[0084] The average particle size (D50) of the core 10 can be in the range of about 0.1 nm to about 5 nm, about 0.5 nm to about 3 nm, or about 0.8 nm to about 2 nm. When the average particle size (D50) of the core 10 is in the above range, the quantum dot 100 can emit short-wavelength shifted blue light.

[0085] In addition to the aforementioned indium and A 1 and A 2 In addition, core 10 may include other elements. For example, core 10 may also include group II elements (e.g., Zn).

[0086] The shell 15 may be formed on the surface of the core 10 to serve as a protective layer for preventing chemical denaturation of the core 10 and maintaining its semiconductor properties, and / or to serve as a charged layer for imparting electrophoretic properties to the quantum dots 100.

[0087] In an embodiment, the shell 15 may include a group III-V semiconductor compound, a group II-VI semiconductor compound, a group III-VI semiconductor compound, a group IV-VI semiconductor compound, a group I-III-VI semiconductor compound, or any combination thereof.

[0088] In one or more embodiments, shell 15 may include a III-V semiconductor compound, a II-VI semiconductor compound, or any combination thereof.

[0089] For example, III-V semiconductor compounds may include: binary compounds, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds, such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. In embodiments, III-V semiconductor compounds may also include group II elements. Examples of group III-V semiconductor compounds that also include group II elements are InZnP, InGaZnP, InAlZnP, etc.

[0090] For example, group II-VI semiconductor compounds may include: binary compounds, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnS, CdZnS, etc. nSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.

[0091] In the embodiments, the II-VI semiconductor compounds may not include Cd and Hg. Therefore, the II-VI semiconductor compounds may include, for example, ZnS, ZnSe, ZnTe, ZnO, MgS, MgSe, ZnSeS, ZnSeTe, ZnSTe, MgZnS, MgZnSe, or any combination thereof.

[0092] III-VI semiconductor compounds may include: binary compounds, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds, such as InGaS3, InGaSe3, etc.; or any combination thereof.

[0093] Examples of group IV-VI semiconductor compounds are: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds, such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.

[0094] Group I-III-VI semiconductor compounds may include, for example, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, or any combination thereof.

[0095] In embodiments, III-V semiconductor compounds may include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, Ga... AlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof, and group II-VI semiconductor compounds may include ZnS, ZnSe, ZnTe, ZnO, MgS, MgSe, ZnSeS, ZnSeTe, ZnSTe, MgZnS, MgZnSe, or any combination thereof.

[0096] In one or more embodiments, in addition to the semiconductor compound described above, the shell 15 may also include a metal or non-metal oxide.

[0097] Metal or non-metal oxides can be, for example, two-element compounds (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO) or three-element compounds (such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4).

[0098] Shell 15 may have a single-layer structure. A single-layer structure may include one compound or two or more compounds.

[0099] In an embodiment, the shell 15 may have a multi-layered structure.

[0100] In an embodiment, shell 15 may include: i) a first shell covering core 10; and ii) a second shell covering the first shell.

[0101] The materials included in the first shell and the materials included in the second shell may be partially different from each other.

[0102] In an embodiment, the first shell may include GaP, ZnSe, ZnSeS, or any combination thereof, and the second shell may include ZnS.

[0103] The average particle size (D50) of quantum dot 100 can be in the range of about 0.5 nm to about 20 nm, about 1 nm to about 10 nm, or about 1.3 nm to about 7 nm. When the average particle size (D50) of quantum dot 100 is in the above range, quantum dot 100 can emit short-wavelength shifted blue light while having high emission quantum efficiency.

[0104] The quantum dot 100 has a first region 11 and a second region 12 as described in this specification, and can therefore emit blue light having a maximum emission wavelength in the range of about 400 nm to about 490 nm, about 430 nm to about 480 nm, or about 440 nm to about 475 nm. The quantum dot 100 can have a photoluminescence quantum yield (PLQY) equal to or greater than 70%. For example, the quantum dot 100 can have a PLQY in the range of about 70% to about 99% or about 75% to about 95%. The full width at half maximum (FWHM) of the quantum dot 100 can be equal to or less than about 50 nm. For example, the FWHM of the quantum dot 100 can be in the range of about 35 nm to about 50 nm or about 40 nm to about 48 nm. High-quality optical components and electronic devices can be realized by using this quantum dot 100.

[0105] Previously, quantum dots 100 with spherical shapes have been described, but the shapes of quantum dots are not limited to this. For example, quantum dots can have various shapes such as pyramidal, multi-armed, cubic nanoparticles, nanotubes, nanowires, nanofibers, and nanosheets.

[0106] Figure 2 Description of the quantum dot 200 shown

[0107] Figure 2 This is a schematic cross-sectional view of a quantum dot in one or more embodiments. Figure 2 Quantum dot 200 includes indium (In) and A 1 and A 2 The core 20 and the shell 25 covering the core 20. In Figure 2 In quantum dot 200, A 1 It is a V-group element, A 2 It is a Group III element.

[0108] The core 20 may include a first region 21, a second region 22 covering the first region 21, and a third region 23 covering the second region 22.

[0109] In the construction of quantum dot 200, other structures (e.g., A) 1 A 2 The description of the average particle size of region 21, region 22, shell 25, core 20, and quantum dot 200 is as follows: Figure 1 The above description.

[0110] The third region 23 may i) cover the second region 22, and ii) may not include indium and may include A. 1 and A 2 .

[0111] For example, the third region 23 may include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, or any combination thereof (or consist of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, or any combination thereof).

[0112] Area 23, A2 The element may be introduced into the third region 23 via a cation exchange reaction. For example, the third region 23 of the core 10 is not formed by first synthesizing the first region 21 and the second region 22 and then applying or growing the third region 23 on the surface of the second region 22. Therefore, the third region 23 is clearly distinguishable from the shell 25 formed on the surface of the core 20 by coating or growth after the first synthesis of the core 20. For example, the domains or phases of the second region 22 are continuously connected to the domains or phases of the third region 23, but the domains or phases of the core 20 may be discontinuously separated from the domains or phases of the shell 25.

[0113] In the embodiment, A is included in the first region 21. 1 A, including in the second area 22 1 and A included in the third region 23 1 They can be the same as each other.

[0114] In one or more embodiments, A is included in the third region 23. 2 The concentration of A can have 2 The concentration gradient gradually increases along the direction from the interface between the second region 22 and the third region 23 toward the surface of the core 20.

[0115] Methods for preparing quantum dots

[0116] The method for preparing the above-mentioned quantum dots 100 or 200 may include the following steps:

[0117] Provides indium (In) and asphalt (A) 1 The first particle;

[0118] By subjecting the first particle to a temperature in the range of about 210°C to about 340°C, and including A 2 The precursor composition contacts to form core 10 or 20; and

[0119] Forming a shell 15 covering the core 10 or a shell 25 covering the core 20.

[0120] Regarding A 1 and A 2 For a description, please refer to the description in this instruction manual.

[0121] In the step of providing the first particle, the first particle may include In and A. 1 And it may not include A. 2 .

[0122] Used to provide the first particle containing A 2Precursors may include, for example, trioctylphosphine, trioctylphosphine oxide, oleylamine, octylamine, trioctylamine, hexadecylamine, hexylphosphonic acid, tetradecylphosphonic acid, octylphosphonic acid, or any combination thereof.

[0123] In an embodiment, the average particle size (D50) of the first particle may be equal to the average particle size (D50) of core 10 or 20.

[0124] For example, the average particle size (D50) of the first particle can be in the range of about 0.1 nm to about 5 nm, about 0.5 nm to about 3 nm, or about 0.8 nm to about 2 nm. When the average particle size (D50) of the first particle is in the above range, the quantum dots prepared according to the quantum dot preparation method can emit short-wavelength shifted blue light.

[0125] The formation includes indium (In) and a 1 and A 2 The step of forming core 10 or 20 may include forming a second region 12 of core 10 or a second region 22 of core 20 and / or a third region 23 of core 20 by a cation exchange reaction. In the cation exchange reaction, the first particle is reacted with a substance containing A at a temperature ranging from about 210°C to about 340°C (e.g., from about 230°C to about 320°C or from about 250°C to about 310°C). 2 Upon contact with the precursor composition, at least a portion of the indium cations of the first particle are affected by A. 2 Cation substitution. For example, the temperature range for cation exchange reactions can be from about 210°C to about 340°C, from about 230°C to about 320°C, or from about 250°C to about 310°C.

[0126] When the cation exchange reaction temperature is within the above range, quantum dot 100 or 200 may be provided with a first region 11 or 21 as described in this specification, and include indium and argon in the second region 12 of quantum dot 100 or the second region 22 of quantum dot 200. 2 They can be alloyed together, enabling quantum dots 100 or 200 to emit blue light with a maximum emission wavelength in the range of about 400 nm to about 490 nm, while simultaneously having high emission quantum efficiency.

[0127] Contains A 2 The precursor can be selected from A 2 And can indium cations and A in the first particle 2 Any compound that undergoes a cation exchange reaction between cations.

[0128] For example, containing A 2 Precursors may include those containing A 2 Halides, containing A 2 Oxides, containing A 2Nitrogen compounds, containing A 2 Antimonides, containing A 2 Nitrogen oxides, containing A 2 Sulfides, containing A 2 Halogen oxides, containing A 2 Halogen oxide hydrates, containing A 2 Nitrates, containing A 2 Nitrate salts, containing A 2 Sulfates, containing A 2 Sulfate salts, containing A 2 Amine derivatives, containing A 2 Hydrocarbon derivatives or any combination thereof.

[0129] In the embodiment, containing A 2 Precursors may include A 2 I3, A 2 Br3, A 2 Cl3、(A 2 )2Cl4、(A 2 )2O4、A 2 N, A 2 Sb、(A 2 )2S3、A 2 (ClO4)3·yH2O、A 2 (NO3)3·yH2O、(A 2 )2(SO4)3、(A 2 )2(SO4)3·yH2O、C 12 H 36 (A 2 )2N6、A 2 (CH3)3 or combinations thereof, where y is a real number greater than zero.

[0130] In one or more embodiments, containing A 2 The precursor can be GaI3.

[0131] Besides containing A 2 In addition to precursors, including those containing A 2 The precursor composition may also include solvents, dispersants, etc.

[0132] For example, the solvent may include trioctylphosphine (TOP), tributylphosphine (TBP), triphenylphosphine (TPP), diphenylphosphine (DPP), oleylamine (OLA), dodecylamine (DDA), hexadecylamine (HDA), octadecylamine (ODA), octylamine (OTA), trioctylamine (TOA), oleic acid (OA), 1-octadecene (ODE), or any combination thereof.

[0133] The shell 15 covering the core 10 or the shell 25 covering the core 20 can be formed by processes known in the art.

[0134] The step of forming shell 15 or 25 can be performed at a temperature ranging from about 180°C to about 340°C (e.g., from about 200°C to about 320°C).

[0135] The precursor used to form shell 15 or 25 may include any precursor capable of forming shell 15 or 25 as described in this specification.

[0136] For example, the precursor used to form shell 15 or 25 may include a zinc precursor. The zinc precursor may include, for example, dimethyl zinc, diethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, or any combination thereof.

[0137] In one or more embodiments, the precursor used to form shell 15 or 25 may include a sulfur (S) precursor such as trioctylphosphine sulfide.

[0138] In one or more embodiments, the precursor used to form shell 15 or 25 may include a selenium (Se) precursor such as trioctylphosphine selenide.

[0139] Optical components

[0140] Quantum dots can be used in a variety of optical components. Therefore, according to another aspect, an optical component incorporating quantum dots is provided.

[0141] In this embodiment, the optical component may be a light control device.

[0142] In one or more embodiments, the optical component may be a color filter, a color conversion component, a capping layer, a light extraction efficiency enhancement layer, a selective light absorption layer, or a polarizing layer.

[0143] electronic devices

[0144] Quantum dots can be used in a variety of electronic devices. Therefore, it is possible to provide an electronic device that incorporates quantum dots.

[0145] In one embodiment, the electronic device may include: a light source; and a color conversion component arranged in the optical path of light emitted from the light source, wherein the color conversion component includes quantum dots.

[0146] Figure 3 This is a schematic diagram of the structure of the electronic device 200A according to an embodiment. Figure 3 The electronic device 200A includes: a substrate 210; a light source disposed on the substrate 210; and a color conversion component 230 disposed on the light source 220.

[0147] For example, the light source 220 may be a backlight unit (BLU) used in a liquid crystal display (LCD), fluorescent lamp, light-emitting diode, organic light-emitting diode, or quantum dot light-emitting diode (QLED), or any combination thereof. The color conversion member 230 may be positioned in at least one direction of travel of the light emitted from the light source 220.

[0148] At least one region of the color conversion component 230 of the electronic device 200A includes a quantum dot, and the region absorbs light emitted from the light source 220 to emit blue light having a maximum emission wavelength in the range of 400 nm to about 490 nm.

[0149] The color conversion component 230 is disposed in at least one direction of travel of the light emitted from the light source 220, and does not exclude the possibility that other elements may be further included between the color conversion component 230 and the light source 220.

[0150] For example, a polarizer, liquid crystal layer, light guide plate, diffuser plate, prism sheet, microlens sheet, brightness enhancement sheet, reflective film, color filter, or any combination thereof may be additionally disposed between the light source 220 and the color conversion member 230.

[0151] In one or more embodiments, a polarizer, liquid crystal layer, light guide plate, diffuser plate, prism sheet, microlens sheet, brightness enhancement sheet, reflective film, color filter, or any combination thereof may be additionally disposed on the color conversion member 230.

[0152] As an example based on the disclosed embodiments Figure 3 The electronic device 200A can have any of the various shapes known in the art, and therefore can also include a variety of known structures.

[0153] In one or more embodiments, the electronic device may include a structure comprising a light source, a light guide plate, a color conversion component, a first polarizer, a liquid crystal layer, a color filter, and a second polarizer arranged in sequence.

[0154] In one or more embodiments, the electronic device may include a structure comprising a light source, a light guide plate, a first polarizer, a liquid crystal layer, a second polarizer, and a color conversion component arranged in sequence.

[0155] In the above embodiments, the color filter may include pigments or dyes. In the above embodiments, either the first polarizer or the second polarizer may be a vertical polarizer, and the other of the first polarizer and the second polarizer may be a horizontal polarizer.

[0156] The quantum dots described in this specification can be used as emitters. Therefore, another aspect provides an electronic device including a light-emitting device comprising: a first electrode; a second electrode facing the first electrode; and an emitting layer disposed between the first electrode and the second electrode, wherein the light-emitting device (e.g., the emitting layer of the light-emitting device) may include quantum dots. The light-emitting device may further include a hole transport region disposed between the first electrode and the emitting layer, an electron transport region disposed between the emitting layer and the second electrode, or a combination thereof.

[0157] Figure 4 This is a schematic cross-sectional view showing the structure of the light-emitting device 10A according to an embodiment.

[0158] The light-emitting device 10A includes: a first electrode 110; a second electrode 190 facing the first electrode 110; an emitting layer 150 located between the first electrode 110 and the second electrode 190 and including quantum dots; a hole transport region located between the first electrode 110 and the emitting layer 150; and an electron transport region 170 located between the emitting layer 150 and the second electrode 190. The layers of the light-emitting device 10A will be described below.

[0159] [First Electrode 110]

[0160] exist Figure 1 In this configuration, the substrate may be additionally located below the first electrode 110 or above the second electrode 190. For the substrate, a glass substrate or a plastic substrate, both possessing excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance, can be used.

[0161] For example, in the case of a top-emission type where light from the light-emitting device 10A is emitted in the direction opposite to the substrate, the substrate does not need to be transparent and can be opaque or translucent. In this case, the substrate can be formed of metal. When the substrate is formed of metal, it can include carbon, iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), etc. alloy, alloy, Alloys or any combination thereof.

[0162] In addition, although Figure 4 Although not shown, a buffer layer, a thin-film transistor, and an organic insulating layer may be disposed between the substrate and the first electrode 110.

[0163] The first electrode 110 can be formed, for example, by depositing or sputtering a material for forming the first electrode 110 onto a substrate. The first electrode 110 can be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. To form the first electrode 110 as a transmissive electrode, the material used for the first electrode can include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), and InZnSnO. x (IZSO), ZnSnO x (ZSO), graphene, PEDOT:PSS, carbon nanotubes, silver (Ag) nanowires, gold (Au) nanowires, metal mesh, or any combination thereof. In one or more embodiments, in order to form the first electrode 110 as a semi-transmissive electrode or a reflective electrode, the material used for the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0164] The first electrode 110 may have a single-layer structure or a multi-layer structure comprising multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0165] [Hole transport area 130]

[0166] The hole transport region 130 may have: i) a single-layer structure consisting of a single layer comprising a single material; ii) a single-layer structure consisting of a single layer comprising multiple materials that are different from each other; or iii) a multi-layer structure consisting of multiple layers comprising multiple different materials that are different from each other.

[0167] The hole transport region 130 may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0168] For example, the hole transport region 130 may have a monolayer structure consisting of single layers comprising different materials from each other, or it may have a multilayer structure consisting of hole injection layers / hole transport layers, hole injection layers / hole transport layers / emission auxiliary layers, hole injection layers / emission auxiliary layers, hole transport layers / emission auxiliary layers, or hole injection layers / hole transport layers / electron blocking layers that can be sequentially stacked from the first electrode 110. However, the disclosure is not limited thereto.

[0169] Hole transport region 130 may include amorphous inorganic or organic materials. Inorganic materials may include NiO, MoO3, Cr2O3, and / or Bi2O3. Furthermore, inorganic materials may include p-type inorganic semiconductors in which Cu, Ag, or Au iodides, bromides, or chlorides are doped with nonmetals such as O, S, Se, or Te; p-type inorganic semiconductors containing Zn compounds doped with metals such as Cu, Ag, or Au; or p-type inorganic semiconductors doped with nonmetals such as N, P, As, Sb, or Bi; or spontaneous p-type inorganic semiconductors such as ZnTe.

[0170] Organic materials may include m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), polyvinylcarbazole (PVK), compounds represented by formula 201, compounds represented by formula 202, or any combination thereof:

[0171]

[0172] Formula 201

[0173]

[0174] Formula 202

[0175]

[0176] Among them, in equations 201 and 202,

[0177] L 201 To L 204 They can all be independently unsubstituted or substituted with at least one R. 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0178] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or substituted with at least one R 10a C1-C 20 Alkylene, unsubstituted or substituted with at least one R 10aC2-C 20 alkenyl, unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0179] xa1 to xa4 can each be an integer from 0 to 5, which can be independent of each other.

[0180] xa5 can be an integer from 1 to 10.

[0181] R 201 To R 204 and Q 201 They can all be independently unsubstituted or substituted with at least one R. 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0182] R 201 and R 202 It may optionally be via a single bond, unsubstituted or substituted, having at least one R 10a C1-C5 alkylene groups, either unsubstituted or substituted, have at least one R 10a The C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a C8-C 60 Polycyclic groups (e.g., carbazole groups),

[0183] R 203 and R 204 It may optionally be via a single bond, unsubstituted or substituted, having at least one R 10a C1-C5 alkylene groups, either unsubstituted or substituted, have at least one R 10a The C2-C5 alkenyl groups combine with each other to form unsubstituted or substituted groups with at least one R group. 10a C8-C 60 Polycyclic groups, and

[0184] na1 can be an integer from 1 to 4.

[0185] The thickness of the hole transport region 130 can be approximately to approximately Within a certain range. For example, the thickness of the hole transport region 130 can be approximately... to approximately Within the range. When the hole transport region 130 includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately to approximately (For example, about to approximately Within the range of ), the thickness of the hole transport layer can be approximately to approximately (For example, about to approximately Within these ranges, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage when the hole transport region 130, the hole injection layer, and the thickness of the hole transport layer are within these ranges.

[0186] The emission assist layer can increase luminous efficiency by compensating for the optical resonant distance according to the wavelength of the light emitted by the emission layer, and the electron blocking layer can block the leakage of electrons from the emission layer to the hole transport region 130. Materials that may be included in the hole transport region 130 may be included in both the emission assist layer and the electron blocking layer.

[0187] [p-doped]

[0188] In addition to the materials described above, the hole transport region 130 may also include a charge-generating material for improving conductivity. The charge-generating material may be (e.g., in the form of a single layer composed of the charge-generating material) uniformly or non-uniformly dispersed in the hole transport region 130.

[0189] The charge-generating material can be, for example, a p-doped agent.

[0190] For example, p-doped agents can have a lowest unoccupied molecular orbital (LUMO) energy level equal to or less than about -3.5 eV.

[0191] In the embodiments, the p-doper may include quinone derivatives, cyano-containing compounds, compounds including elements EL1 and EL2, or any combination thereof.

[0192] Examples of quinone derivatives are TCNQ, F4-TCNQ, etc.

[0193] Examples of cyano-containing compounds are HAT-CN, compounds represented by formula 221, etc.

[0194]

[0195] Equation 221

[0196]

[0197] In Equation 221,

[0198] R 221 To R 223 They can all be independently unsubstituted or substituted with at least one R. 10a C3-C60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic groups, and

[0199] R 221 To R 223 At least one of them can be a C3-C that is independently substituted with the following groups. 60 Carbocyclic or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituents of cyano, -F, -Cl, -Br, -I, or any combination thereof. 20 Alkyl groups; or any combination thereof.

[0200] In a compound that includes elements EL1 and EL2, element EL1 can be a metal, a metalloid, or any combination thereof, and element EL2 can be a nonmetal, a metalloid, or any combination thereof.

[0201] Examples of metals are: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (… Co, rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.; later transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.), etc.

[0202] Examples of metalloids are silicon (Si), antimony (Sb), tellurium (Te), etc.

[0203] Examples of nonmetals are oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0204] Examples of compounds including elements EL1 and EL2 are metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides, quasi-metal iodides, etc.), metal tellurides, or any combination thereof.

[0205] Examples of metal oxides are tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxide (e.g., ReO3, etc.), etc.

[0206] Examples of metal halides include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0207] Examples of alkali metal halides include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0208] Examples of alkaline earth metal halides include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0209] Examples of transition metal halides are titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, TaBr3, etc.). 3. Chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, R...). Ferrous halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, etc.). 2. IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), cuprous halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0210] Examples of post-transition metal halides are zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), etc.

[0211] Examples of lanthanide metal halides include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3.

[0212] Examples of metal halide are antimony halides (e.g., SbCl5, etc.).

[0213] Examples of metal tellurides include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, FeT). (e.g., e.g., RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0214] [Emission Layer 150]

[0215] The emitter layer 150 can be a single quantum dot layer or a structure in which two or more quantum dot layers are stacked. For example, the emitter layer 150 can be a single quantum dot layer or a structure in which two to 100 quantum dot layers are stacked.

[0216] The emitter layer 150 may include quantum dots as described in this specification.

[0217] In addition to the quantum dots as described in this specification, the emitting layer 150 may also include a dispersion medium in which the quantum dots are dispersed in a naturally coordinated form. The dispersion medium may include organic solvents, polymeric resins, or any combination thereof. The dispersion medium may be any transparent medium that does not affect the optical properties of the quantum dots, is not degraded by light, does not reflect light, or does not absorb light. For example, solvents may include toluene, chloroform, ethanol, octane, or any combination thereof, and polymeric resins may include epoxy resins, silicone resins, polystyrene resins, acrylate resins, or any combination thereof.

[0218] The emitter layer 150 can be formed by coating the hole transport region 130 with a content sub-dot composition for forming the emitter layer and allowing a portion or more of the solvent to evaporate from the composition for forming the emitter layer.

[0219] For example, water, hexane, chloroform, toluene, octane, etc. can be used as solvents.

[0220] The process of coating the composition used to form the emitter layer can be performed using spin coating, casting, microgravure coating, gravure coating, bar coating, roller coating, wire bar coating, dip coating, spraying, screen printing, flexographic printing, offset printing, inkjet printing, etc.

[0221] When the light-emitting device 10A is a full-color light-emitting device, the emitting layer 150 can include emitting layers that emit light of different colors according to their respective sub-pixels.

[0222] For example, emission layer 150 can be patterned into a first color emission layer, a second color emission layer, and a third color emission layer according to their respective sub-pixels. Here, at least one of the above emission layers may include quantum dots as described in the embodiment. For example, the first color emission layer may be a quantum dot emission layer including quantum dots, and each of the second and third color emission layers may be an organic emission layer including an organic compound. Here, the first to third colors are different colors, and the light of the first to third colors may have different maximum emission wavelengths. The first to third colors may be combined with each other to form white.

[0223] In one or more embodiments, the emitting layer 150 may further include a fourth color emitting layer. At least one of the first to fourth color emitting layers may be a quantum dot emitting layer comprising quantum dots, and the other emitting layers may be organic emitting layers comprising organic compounds. Various other modifications may be available. Here, the first to fourth colors may be different colors; for example, the light of the first to fourth colors may have different maximum emission wavelengths. The first to fourth colors may be combined with each other to form white.

[0224] In an embodiment, the light-emitting device 10A may have a structure in which two or more emitting layers emitting the same or different colors of light are stacked in contact with or separated from each other. At least one of the two or more emitting layers may be a quantum dot emitting layer comprising quantum dots, and the other emitting layer may be an organic emitting layer comprising an organic compound. Thus, various other modifications may be available. Specifically, the light-emitting device 10A may include a first color emitting layer and a second color emitting layer, and the first color and the second color may be the same color or different colors. For example, both the first color and the second color may be blue.

[0225] In addition to quantum dots, the emitter layer 150 may also include at least one selected from organic compounds and semiconductor compounds.

[0226] In detail, organic compounds can include a host and a dopant. The host and dopant can respectively include the hosts and dopants commonly used in organic light-emitting devices.

[0227] For example, semiconductor compounds can be organic and / or inorganic perovskites.

[0228] The thickness of the emitting layer 150 can be in the range of about 7 nm to about 100 nm (e.g., about 15 nm to about 50 nm). When the thickness of the emitting layer 150 is in the above range, the light-emitting device 10A can have excellent luminous efficiency and / or lifetime by controlling the apertures created by the arrangement of quantum dot particles in the emitting layer 150.

[0229] [Electronic transmission area 170]

[0230] The electron transport region 170 may have: i) a single-layer structure consisting of a single layer comprising a single material; ii) a single-layer structure consisting of a single layer comprising multiple materials that are different from each other; or iii) a multi-layer structure consisting of multiple layers comprising multiple different materials that are different from each other.

[0231] The electron transport region 170 may include at least one layer selected from a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, and an electron injection layer. However, the disclosed embodiments are not limited thereto.

[0232] For example, the electron transport region 170 may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, with the constituent layers of each structure stacked sequentially from the emitter layer. However, the embodiments are not limited to this.

[0233] The electron transport region 170 may include a conductive metal oxide. Examples of conductive metal oxides are ZnO, TiO2, WO3, SnO2, In2O3, Nb2O5, Fe2O3, CeO2, SrTiO3, Zn2SnO4, BaSnO3, In2S3, ZnSiO, and PC. 60 BM, PC 70BM, Mg-doped ZnO (ZnMgO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), In-doped ZnO (IZO), Al-doped TiO2, Ga-doped TiO2, In-doped TiO2, Al-doped WO3, Ga-doped WO3, In-doped WO3, Al-doped SnO2, Ga-doped SnO2, In-doped SnO2, Mg-doped In2O3, Al-doped In2O3, Ga-doped In2O3, Mg-doped Nb2O5, Al-doped Nb2O5, Ga-doped Nb2O5, Mg-doped Fe2O3, Al-doped Fe2O3, Ga-doped Fe2O3, In-doped Fe2O3, Mg-doped CeO2, Al-doped Doped CeO2, Ga-doped CeO2, In-doped CeO2, Mg-doped SrTiO3, Al-doped SrTiO3, Ga-doped SrTiO3, In-doped SrTiO3, Mg-doped Zn2SnO4, Al-doped Zn2SnO4, Ga-doped Zn2SnO4, In-doped Zn2SnO4, Mg-doped BaSnO3, Al-doped BaSnO3, Ga-doped BaSnO3, In-doped BaSnO3, Mg-doped In2S3, Al-doped In2S3, Ga-doped In2S3, In-doped In2S3, Mg-doped ZnSiO, Al-doped ZnSiO, Ga-doped ZnSiO, In-doped ZnSiO, or any combination thereof.

[0234] Organic materials may include known compounds with electron transport capabilities such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), NTAZ, etc.

[0235]

[0236] Organic materials can be nitrogen-containing C1-C atoms that are deficient in at least one π electron. 60 Metal-free compounds with cyclic groups.

[0237] For example, electron transport region 170 may include a compound represented by formula 601.

[0238] Formula 601

[0239] [Ar 601 ] xe11 -[(L 601 ) xe1 -R601 ] xe21 ,

[0240] In Equation 601,

[0241] Ar 601 and L 601 They can all be independently unsubstituted or substituted with at least one R. 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0242] xe11 can be 1, 2, or 3.

[0243] xe1 can be 0, 1, 2, 3, 4, or 5.

[0244] R 601 It can be unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),

[0245] Q 601 To Q 603 All can be the same as described in reference Q1.

[0246] xe21 can be 1, 2, 3, 4, or 5, and

[0247] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or substituted with at least one R. 10a Nitrogen-containing C1-C with depleted π electrons 60 Cyclic groups.

[0248] The thickness of the electron transport region 170 can be approximately to approximately (For example, about to approximately Within the range of ), when the electron transport region 170 includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, hole blocking layer, or electron control layer may all be within approximately to approximately (For example, about to approximately The thickness of the electron transport layer can be within the range of approximately 1000 mm, and the thickness of the electron transport layer can be approximately 1000 mm. to approximately (For example, about to approximately Within these ranges, satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage when the thickness of the buffer layer, hole blocking layer, electronic control layer, electron transport layer, and / or electron transport layer is within these ranges.

[0249] In addition to the materials mentioned above, the electron transport region 170 (e.g., the electron transport layer in the electron transport region) may also include a metallic material.

[0250] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ions in alkali metal complexes may be Li, Na, K, Rb, or Cs ions, while the metal ions in alkaline earth metal complexes may be Be, Mg, Ca, Sr, or Ba ions. Ligands coordinated to the metal ions of alkali metal or alkaline earth metal complexes may include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridinium, hydroxyphenanthrene, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0251] For example, metallic materials may include Li complexes. Li complexes may include, for example, compounds ET-D1(Liq) or ET-D2:

[0252]

[0253] The electron transport region 170 may include an electron injection layer that facilitates electron injection from the second electrode 190. The electron injection layer may be in direct contact with the second electrode 190.

[0254] The electron injection layer can have: i) a monolayer structure consisting of a single layer made of a single material; ii) a monolayer structure consisting of a single layer made of multiple different materials; or iii) a multilayer structure comprising multiple layers made of multiple different materials.

[0255] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0256] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0257] The alkali metal compound, the alkaline earth metal compound, and the rare earth metal compound may be oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.) or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, or any combination thereof.

[0258] The alkali metal compound may include: alkali metal oxides such as Li2O, Cs2O, K2O, etc.; alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc.; or any combination thereof. The alkaline earth metal compound may include alkaline earth metal oxides (such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1), Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc. The rare earth metal compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the rare earth metal compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, etc.

[0259] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include: i) one of the ions of an alkali metal, an alkaline earth metal, and a rare earth metal; and ii) as a ligand bound to a metal ion, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenidine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0260] In embodiments, the electron injection layer may consist of alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof as described above. In one or more embodiments, the electron injection layer may further comprise organic materials (e.g., compounds represented by Formula 601).

[0261] In embodiments, the electron-injected layer may consist of: i) alkali metal compounds (e.g., alkali metal halides); or ii) a) alkali metal compounds (e.g., alkali metal halides) and b) alkali metals, alkaline earth metals, rare earth metals, or any combination thereof. For example, the electron-injected layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, etc.

[0262] When the electron injection layer also includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic materials.

[0263] The thickness of the electron injection layer can be approximately to approximately (For example, about to approximately Within the range of ), satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage when the thickness of the electron injection layer is within the above range.

[0264] [Second electrode 190]

[0265] The second electrode 190 is disposed on the electron transport region 170. The second electrode 190 may be a cathode serving as an electron injection electrode. As the material used to form the second electrode 190, metals, alloys, conductive compounds, or any combination thereof with low work function can be used.

[0266] The second electrode 190 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 190 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.

[0267] The second electrode 190 may have a single-layer structure or a multi-layer structure including multiple layers.

[0268] In addition to the light-emitting device 10A, the electronic device (e.g., a light-emitting apparatus) may also include: i) a color filter; ii) a color conversion layer; or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be located in at least one direction of travel of the light emitted from the light-emitting device 10A. For example, the light emitted from the light-emitting device 10A may be blue light or white light. Details regarding the light-emitting device 10A can be found in the relevant description provided above. In embodiments, the color conversion layer may include quantum dots. Quantum dots may be, for example, quantum dots as described herein.

[0269] In addition to the light-emitting device 10A as described above, the electronic device may also include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, and either the source electrode or the drain electrode may be electrically connected to one of the first electrode 110 and the second electrode 190 of the light-emitting device 10A.

[0270] Thin-film transistors may also include gate electrodes, gate insulating films, etc.

[0271] The active layer can include crystalline silicon, amorphous silicon, organic semiconductors, oxide semiconductors, etc.

[0272] The electronic device may also include a sealing portion that encapsulates the light-emitting device 10A. The sealing portion may be located between the color filter and / or color conversion layer and the light-emitting device 10A. The sealing portion allows light from the light-emitting device 10A to be extracted to the outside while preventing ambient air and moisture from penetrating into the light-emitting device 10A. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one organic layer and an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0273] Depending on the purpose of the electronic device, various functional layers, in addition to color filters and / or color conversion layers, can be arranged on the sealing portion. Examples of functional layers are touchscreen layers, polarization layers, authentication devices, etc. The touchscreen layer can be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer. The authentication device can be, for example, a biometric authentication device that authenticates an individual using biometric information from a living body (e.g., fingertip, pupil, etc.).

[0274] In addition to the light-emitting device 10A, the authentication device may also include a biometric information collector.

[0275] Electronic devices can be used in various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic diaries, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (e.g., instruments for vehicles, aircraft, and ships), projectors, etc.

[0276] [Definition of the term]

[0277] As used herein, the term "C3-C" 60 "Carbocyclic group" refers to a cyclic group consisting solely of carbon as the cyclic atom and having three to sixty carbon atoms, such as the term "C1-C" as used herein. 60 A "heterocyclic group" refers to a cyclic group having one to sixty carbon atoms and also containing heteroatoms other than carbon as cyclic atoms. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups consisting entirely of a single ring or polycyclic groups in which two or more rings are condensed together. For example, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0278] As used herein, the term "cyclic group" can include C3-C 60 Carbocyclic groups and C1-C 60 Both heterocyclic groups.

[0279] As used herein, “π-electron-rich C3-C” 60 "Cyclic group" refers to a cyclic group having three to sixty carbon atoms and excluding *-N=*' as the cyclic moiety, such as the term "nitrogen-poor C1-C" used herein. 60 "Cyclic group" refers to a heterocyclic group having one to sixty carbon atoms and including *-N=*' as the cyclic part.

[0280] For example,

[0281] C3-C 60 The carbocyclic group can be: i) a T1 group; or ii) a condensed cyclic group in which two or more T1 groups are condensed together (e.g., cyclopentadienyl group, adamantyl group, norbornel group, phenyl group, cyclopentadienyl group, naphthyl group, chamomile cyclic group, indane group, acenaphthene group, phenanthrene group, phenanthrene group, anthracene group, fluoranthene group, benzo[9,10]phenanthrene group, pyrene group, Groups, perylene groups, pentanene groups, heptaphenyl groups, tetraphenyl groups, fentanyl groups, hexaphenyl groups, pentaphenyl groups, rutin groups, fentanyl groups, ovoid groups, indole groups, fluorene groups, spirodifluorene groups, benzo[a]fluorene groups, indole[a]phenanthrene groups, or indole[a]anthracene groups),

[0282] C1-C 60 The heterocyclic group can be: i) a T2 group; ii) a condensed cyclic group in which at least two T2 groups are condensed together; or iii) a condensed cyclic group in which at least one T2 group and at least one T1 group are condensed together (e.g., pyrrole group, thiophene group, furan group, indole group, benzo[a]indole group, naphtho[a]indole group, isoindole group, benzo[a]isoindole group, naphtho[a]isoindole group, benzo[a]thiophene group, benzo[a]thiophene group, benzene[a]thiophene ... benzofuran group, carbazole group, dibenzothiophene group, dibenzofuran group, indole-carbazole group, indolo-carbazole group, benzofuran-carbazole group, benzothiophene-carbazole group, benzothiophene-carbazole group, benzoindolo-carbazole group, benzocarbazole group, benzonaphthiofuran group, benzonaphthiophene group, benzonaphthiophene group, benzofuran-dibenzofuran group, benzofuran-dibenzothiophene Groups, benzothiophene, dibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benziisoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzo[…] Quinoline group, benzoisoquinoline group, quinoxaloline group, benzoquinoxaloline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamoline group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0283] C3-C rich in π electrons 60 The cyclic group can be: i) a T1 group; ii) a condensed cyclic group in which at least two T1 groups are condensed together; iii) a T3 group; iv) a condensed cyclic group in which at least two T3 groups are condensed together; or v) a condensed cyclic group in which at least one T3 group and at least one T1 group are condensed together (e.g., C3-C). 60Carbocyclic groups, 1H-pyrrole groups, thiorrole groups, borocyclopentadienyl groups, 2H-pyrrole groups, 3H-pyrrole groups, thiophene groups, furan groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiorrole groups, benzothiophene groups, benzofuran groups, carbazole groups, dibenzothiorrole groups, dibenzothiophene groups, dibenzofuran groups, indole-carbazole groups, indole-carbazole groups, benzofuran-carbazole groups, benzothiophene-carbazole groups, benzothiorrole-carbazole groups, benzoindole-carbazole groups, benzocarbazole groups, benzonaphthofuran groups, benzonaphthothiophene groups, benzonaphthorrole groups, benzofuran-dibenzofuran groups, benzofuran-dibenzothiophene groups, benzothiophene-dibenzothiophene groups, etc.

[0284] Nitrogen-containing C1-C cells with depleted π electrons 60 The cyclic group can be: i) a T4 group; ii) a condensed cyclic group in which at least two T4 groups are condensed together; iii) a condensed cyclic group in which at least one T4 group and at least one T1 group are condensed together; iv) a condensed cyclic group in which at least one T4 group and at least one T3 group are condensed together; or v) a condensed cyclic group in which at least one T4 group, at least one T1 group, and at least one T3 group are condensed together (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzo[i] Oxazole group, benzisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamyl group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0285] The T1 group can be a cyclopropane group, cyclobutane group, cyclopentane group, cyclohexane group, cycloheptane group, cyclooctane group, cyclobutene group, cyclopentene group, cyclopentadiene group, cyclohexene group, cyclohexadiene group, cycloheptene group, adamantane group, norbornane (or bicyclo[2.2.1]heptane) group, norbornene group, bicyclo[1.1.1]pentane group, bicyclo[2.1.1]hexane group, bicyclo[2.2.2]octane group, or phenyl group.

[0286] The T2 group can be a furan group, thiophene group, 1H-pyrrole group, thiorrole group, borocyclopentadienyl group, 2H-pyrrole group, 3H-pyrrole group, imidazole group, pyrazole group, triazole group, tetraazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, azathirrole group, azaborhexacyclopentadienyl group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, tetraazine group, pyrrolidinyl group, imidazoalkyl group, dihydropyrrole group, piperidine group, tetrahydropyridine group, dihydropyridine group, hexahydropyrimidine group, tetrahydropyrimidine group, dihydropyrimidine group, piperazine group, tetrahydropyrazine group, dihydropyrazine group, tetrahydropyridazine group, or dihydropyridazine group.

[0287] The T3 group can be a furan group, a thiophene group, a 1H-pyrrole group, a thiophene group, or a borocyclopentadiene group, and

[0288] The T4 group can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiazole group, an azaboranecyclopentadiene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetraazine group.

[0289] As used herein, the terms "cyclic group, C3-C" are similar to those used in this context. 60 Carbocyclic group, C1-C 60 Heterocyclic groups, π-electron-rich C3-C 60 Cyclic groups or nitrogen-containing C1-C groups with depleted π electrons 60 "Cyclic group" refers to a group whose structure, according to the corresponding terminology, is condensed with any cyclic group, monovalent group, or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.). In the embodiments, "phenyl group" can be a benzo[a] group, phenyl group, phenylene group, etc., which can be readily understood by those skilled in the art from the structure of a formula including "phenyl group".

[0290] Unit price C3-C 60 Carbon cyclo groups and monovalent C1-C 60 An example of a heterocyclic group is C3-C. 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl, monovalent non-aromatic condensed polycyclic, and monovalent non-aromatic condensed heterocyclic. Divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 An example of a heterocyclic group is C3-C.10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hybrid aryl, divalent non-aromatic condensed polycyclic and divalent non-aromatic condensed heterocyclic.

[0291] As used herein, the term "C1-C" 60 "Alkyl" refers to a straight-chain or branched monovalent group of an aliphatic saturated hydrocarbon having one to sixty carbon atoms, and specific examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl. As used herein, the term "C1-C" is used in conjunction with the following. 60 "alkylene" refers to a compound with C1-C2 atoms. 60 Divalent groups with the same structure as alkyl groups.

[0292] As used herein, the term "C2-C" 60 "Alkenyl" refers to the group formed at C2-C. 60 An alkyl group having at least one carbon-carbon double bond at its middle or end, and examples of such groups are vinyl, propenyl, butenyl, etc. As used herein, the term "C2-C" is used in conjunction with this. 60 "Alkenyl" refers to a group that has a C2-C bond structure. 60 Divalent groups with the same structure as alkenyl groups.

[0293] As used herein, the term "C2-C" 60 "Alkyne group" refers to the group at C2-C 60 An alkyl group having at least one carbon-carbon triple bond at its middle or end, and examples of such groups are ethynyl, propynyl, etc. As used herein, the term "C2-C" is used in conjunction with this. 60 "Immyneyl" refers to a group with a C2-C group. 60 Divalent groups with the same structure as alkynyl groups.

[0294] As used herein, the term "C1-C" 60 "Alkoxy" refers to the compound formed by -OA 101 (where A) 101 It is C1-C 60 Alkyl groups are monovalent groups, and examples of them are methoxy, ethoxy, isopropoxy, etc.

[0295] As used herein, the term "C3-C"10 "Cycloalkyl" refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, examples of which are cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornelyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.2]octyl, etc. As used herein, the term "C3-C" is also relevant. 10 "Cycloalkylene" refers to a compound with C3-C66 atoms. 10 Divalent groups with the same structure as cycloalkyl groups.

[0296] As used herein, the term "C1-C" 10 "Heterocyclic alkyl" refers to a monovalent cyclic group consisting of one to ten carbon atoms, including at least one heteroatom as a cyclic atom in addition to a carbon atom. Examples include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, tetrahydrothiopheneyl, etc. As used herein, the term "C1-C..." 10 "Heterocyclic alkyl" refers to a compound with C1-C2 atoms. 10 Divalent groups with the same structure as heterocyclic alkyl groups.

[0297] As used herein, the term "C3-C" 10 "Cycloalkenyl" refers to a monovalent cyclic group having three to ten carbon atoms and at least one carbon-carbon double bond in its ring and lacking aromaticity; examples include cyclopentenyl, cyclohexenyl, cycloheptenyl, etc. As used herein, the term "C3-C" is similar. 10 "Biopylidene alkenyl" refers to a group that has a similar structure to C3-C4. 10 A divalent group with the same structure as a cycloalkenyl group.

[0298] As used herein, the term "C1-C" 10 "Heterocyclic alkenyl" refers to a monovalent cyclic group with 1 to 10 carbon atoms, which includes at least one heteroatom as a cyclic atom in addition to carbon atoms in its ring structure and has at least one double bond. C1-C 10 Examples of heterocyclic alkenyl groups are 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, 2,3-dihydrothiopheneyl, etc., as used herein in the terminology "C1-C". 10 "Heterocyclic alkenyl" refers to a group that has a similar structure to C1-C1. 10 Divalent groups with the same structure as heterocyclic alkenyl groups.

[0299] As used here, the term "C6-C" 60 "Aryl" refers to a monovalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms, and as used herein, "C6-C" 60 "Aryl" refers to a divalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms. (C6-C) 60Examples of aryl groups are phenyl, cyclopentadienyl, naphthyl, chamomilecycloyl, indarabinyl, acenaphthel, phenanthyl, anthracene, fluoranthyl, benzo[9,10]phenanthyl, pyrene, Compounds, perylene, pentylenyl, hepta-enyl, tetraphenyl, fenyl, hexaphenyl, pentaphenyl, rutinyl, benzoyl, ovyl, etc. When C6-C 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the rings can be condensed together.

[0300] As used herein, the term "C1-C" 60 "Heteroaryl" refers to a monovalent group in a heterocyclic aromatic system having 1 to 60 carbon atoms, which also includes at least one heteroatom other than a carbon atom that serves as a cyclizing atom. The term "C1-C" is used herein. 60 "Hypo-heteroaryl" refers to a divalent group in a heterocyclic aromatic system having 1 to 60 carbon atoms. The heterocyclic aromatic system also includes at least one heteroatom other than a carbon atom that serves as a cyclizing atom. C1-C 60 Examples of heteroaryl groups are pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclolinyl, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl and C1-C 60 When each heteroaryl group comprises two or more rings, the rings can condense together.

[0301] As used herein, the term "monovalent nonaromatic condensation polycyclic group" refers to a monovalent group having two or more rings condensed together, with only carbon atoms (e.g., 8 to 60 carbon atoms) as cyclic atoms, and lacking aromaticity throughout its molecular structure. Examples of monovalent nonaromatic condensation polycyclic groups are indenyl, fluorenyl, spirodifluorenyl, benzo[a]fluorenyl, indo[a]phenanthryl, indo[a]anthrayl, etc. As used herein, the term "divalent nonaromatic condensation polycyclic group" refers to a divalent group having the same structure as the monovalent nonaromatic condensation polycyclic groups described above.

[0302] As used herein, the term "monovalent non-aromatic condensed heterocyclic group" refers to a monovalent group having two or more rings condensed together, including at least one heteroatom other than carbon atoms (e.g., 1 to 60 carbon atoms) as cyclic atoms, and not being aromatic throughout its molecular structure. Examples of monovalent non-aromatic condensed heterocyclic groups include pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, thiazolyl. Benzopyrazolyl, benzimidazoyl, benzoxazolyl, benzothiazoyl, benzoxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazoyl, indolocarbazoyl, benzofuranocarbazoyl, benzothiophenocarbazoyl, benzothiophenocarbazoyl, benzoindolocarbazoyl, benzocarbazoyl, benzonaphthiophenyl, benzonaphthiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, benzothiophenodibenzothiophenyl, etc. As used herein, the term "divalent non-aromatic condensed heteropolycyclic group" refers to a divalent group having the same structure as the aforementioned monovalent non-aromatic condensed heteropolycyclic groups.

[0303] As used here, the term "C6-C" 60 "Aryloxy group" represents -OA 102 (where A) 102 It is C6-C 60 Aryl), and as used herein in the term "C6-C" 60 "Arylthio" indicates -SA 103 (where A) 103 It is C6-C 60 Aryl).

[0304] As used herein, the term "C7-C" 60 "Arylalkyl" refers to -A 104 A 105 (where A) 104 It is C1-C 54 Alkylene, and A 105 It is C6-C 59 Aryl), and as used herein, the term "C2-C" 60 "Heteroarylalkyl" refers to -A 106 A 107 (where A) 106 It is C1-C 59Alkylene, and A 107 It is C1-C 59 (Miscellaneous aromatic compounds).

[0305] As used in this context, the term "R" 10a "refer to:

[0306] Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0307] All are unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Arylalkyl, C2-C 60 heteroarylalkyl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 C1-C or any combination thereof 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 Alkoxy;

[0308] All are unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Arylalkyl, C2-C 60 heteroarylalkyl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q)21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Arylalkyl or C2-C 60 Heteroarylalkyl; or

[0309] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0310] In this specification, Q1 to Q3, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each of these can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkyl groups; all unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 C3-C of alkoxy, phenyl, biphenyl, or any combination thereof 60 Carbocyclic or C1-C 60 Heterocyclic group; C7-C 60 arylalkyl; or C2-C 60 Heteroarylalkyl.

[0311] As used herein, the term "heteroatom" refers to any atom other than a carbon atom. Examples of heteroatoms are O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0312] The term "third-row transition metals" as used herein includes Hf, Ta, W, Re, Os, Ir, Pt, Au, etc.

[0313] As used herein, the term "Ph" refers to phenyl, "Me" refers to methyl, "Et" refers to ethyl, and "tert-Bu" or "Bu" refers to... t "Refers to tert-butyl, and as used herein, the term "OMe" refers to methyl methacrylate (MMA).

[0314] As used herein, the term "biphenyl" refers to a phenyl group that has a substituted phenyl group. In other words, "biphenyl" is a phenyl group with a C6-C bond. 60 Aryl groups are substituted phenyl groups.

[0315] As used herein, the term "terphenyl" refers to a phenyl group substituted with biphenyl groups. In other words, a "terphenyl" is a phenyl group having C6-C substitutions. 60 C6-C of aryl 60 Aryl groups are substituted phenyl groups.

[0316] Unless otherwise defined, as used herein, * and *' refer to the binding site with the adjacent atom in the corresponding expression or part.

[0317] In the following text, the quantum dot and the method for preparing the quantum dot according to the embodiment will be described in detail with reference to the following examples.

[0318] [Example]

[0319] Synthesis Example 1 (Synthesis of Quantum Dot 1)

[0320] Step 1: Synthesis of InP particles

[0321] 1.0 mmol of InCl3 and 5 g of oleylamine were placed in a three-necked flask, mixed, and degassed. The mixture was stirred at 100 °C for 120 min to remove oxygen and moisture, thus preparing a reaction solution. The reaction solution was then heated to 290 °C under an argon atmosphere, held for a period of time, and then cooled to 220 °C. 0.25 mmol of P(N(CH3)2) was rapidly injected into the reaction solution, allowing it to react for a period of time to synthesize InP particles with an average particle size (D50) of 1.5 nm.

[0322] Step 2: In 1-x Ga x Synthesis of P nuclei (x = 0.3)

[0323] 0.45 mmol of InP particles, 0.68 mmol of GaI3, and 1.36 mmol of oleylamine were mixed and reacted at 280 °C for 4 min, and purified to synthesize InP particles having the first and second regions as described in this specification. 1-x Ga x P-nucleus particles (x = 0.3).

[0324] Step 3: In 1-x Ga x Synthesis of P / ZnSe / ZnS (x=0.3) quantum dot 1

[0325] In 1-x Ga x To synthesize In with an average particle size (D50) of 2 nm, a ZnSe / ZnS shell was formed on the surface of P core particles (x = 0.3). 1-x Ga x P / ZnSe / ZnS (x = 0.3) quantum dot 1 (hereinafter referred to as "QD-1").

[0326] Synthesis Example 2 (Synthesis of Quantum Dot 2)

[0327] Except for changing the amount of GaI3 used to 0.90 mmol in step 2, In was synthesized in the same manner as in synthesis example 1. 1-x Ga x P / ZnSe / ZnS (x = 0.5) quantum dot 2 (hereinafter referred to as "QD-2").

[0328] Synthesis Example 3 (Synthesis of Quantum Dot 3)

[0329] Except for changing the amount of GaI3 used to 1.35 mmol in step 2, In was synthesized in the same manner as in synthesis example 1. 1-x Ga x P / ZnSe / ZnS (x = 0.7) quantum dot 3 (hereinafter referred to as "QD-3").

[0330] Compare with synthesis example A (synthesis of quantum dot A).

[0331] Except for omitting step 2, InP / ZnSe / ZnS quantum dots A (hereinafter referred to as "QD-A") are synthesized in the same manner as in synthesis example 1.

[0332] Compare with synthesis example B (synthesis of quantum dot B).

[0333] Except for changing the reaction temperature in step 2 to 380°C, In was synthesized in the same manner as in synthesis example 1. 1-x Gax P / ZnSe / ZnS (x = 0.3) quantum dot B (hereinafter referred to as "QD-B").

[0334] Compare the synthesis example C (synthesis of quantum dot C).

[0335] Except for changing the reaction temperature in step 2 to 200°C, InP / GaP / ZnSe / ZnS quantum dots C (hereinafter referred to as "QD-C") were synthesized in the same manner as in Synthesis Example 1.

[0336] Evaluation Example 1

[0337] The structures of QD-1 (cation exchange reaction temperature = 280 °C), QD-B (cation exchange reaction temperature = 380 °C), and QD-C (cation exchange reaction temperature = 200 °C) were observed by EDX analysis under vacuum using a TEM apparatus.

[0338] As a result, it can be found that:

[0339] 1) QD-1 (cation exchange reaction temperature = 280°C) has a structure including a first region and a second region as described in this specification.

[0340] 2) QD-B (cation exchange reaction temperature = 380℃) has a structure in which In and Ga are uniformly dispersed throughout the core of quantum dot B, and

[0341] 3) QD-C (cation exchange reaction temperature = 200°C) has a structure that does not include the region in which In and Ga are alloyed with each other, and thus the structure does not include the second region as described in the specification.

[0342] Based on the above evaluation example 1, the composition and structure of QD-1, QD-2, QD-3, QD-A, QD-B and QD-C are summarized in Table 1.

[0343] [Table 1]

[0344]

[0345]

[0346] Evaluation Example 2

[0347] The maximum emission wavelength, full width at half maximum (FWHM), and photoluminescence quantum yield of QD-1, QD-2, QD-3, QD-A, QD-B, and QD-C were evaluated using the Otsuka Corporation's QE-2100 quantum efficiency measurement system (excitation wavelengths: 365 nm, 458 nm), and the results are summarized in Table 2. The emission spectra of QD-1, QD-2, QD-3, and QD-A are shown in Table 2. Figure 5 middle.

[0348] [Table 2]

[0349]

[0350] Table 2 shows that, compared with QD-A and QD-B, QD-1, QD-2 and QD-3 have a maximum emission wavelength equal to or less than 480 nm, and emit blue light with a relatively small full width at half maximum (FWHM) and a relatively high photoluminescence quantum yield.

[0351] Example 1

[0352] The glass substrate with the ITO electrode as the anode was cut to a size of 50mm×50mm×0.7mm, ultrasonically cleaned with isopropanol and pure water for 5 minutes, irradiated with ultraviolet light for 30 minutes, and exposed to ozone for cleaning, and then placed on a vacuum deposition equipment.

[0353] An ITO electrode on a glass substrate was spin-coated with PEDOT:PSS at a coating speed of 3,000 rpm for 60 seconds, allowed to air dry at room temperature for 1 minute, and then baked at 150°C for 30 minutes to form a hole injection layer with a thickness of 33 nm. A hole transport layer with a thickness of 28 nm was then formed by spin-coating the hole injection layer with PVK at a coating speed of 3,000 rpm for 60 seconds, allowing it to air dry at room temperature for 1 minute, and then baking at 150°C for 30 minutes.

[0354] Subsequently, after mixing QD-3 at a concentration of 5 mg / mL in octane as a solvent to prepare a composition for forming the emission layer, a hole transport layer was coated on it by spin coating at a coating speed of 3,000 rpm for 20 seconds, allowed to air dry at room temperature for 5 minutes, and dried at 70°C for 10 minutes to form an emission layer with a thickness of 11 nm on the hole transport layer.

[0355] Subsequently, after preparing a composition for forming an electron transport layer by mixing ZnMgO nanoparticles (particle size = 3.5 nm to 3.7 nm) in ethanol as a solvent at a concentration of 30 mg / mL, an emission layer was coated onto the emission layer using the composition for forming the electron transport layer at a coating speed of 3,000 rpm for 60 seconds, and then baked at 80 °C for 10 minutes to form an electron transport layer with a thickness of 38 nm on the emission layer. Al was then deposited on the electron transport layer to form a cathode with a thickness of 100 nm, thereby fabricating a light-emitting device.

[0356] Evaluation Example 3

[0357] The maximum emission wavelength, driving voltage, current density, luminance, current efficiency, and external quantum efficiency of the light-emitting device fabricated in Example 1 were measured using a current-voltmeter (Keithley SMU 236) and a luminance meter (PR650), and the results are shown in Table 3. i) PL spectrum and EL spectrum (at 6V) of the quantum dot QD-3 of the light-emitting device fabricated in Example 1; ii) Voltage-luminance curves and voltage-current density curves of the light-emitting device fabricated in Example 1; and iii) Current density-current efficiency curves and current density-external quantum efficiency (EQE) curves of the light-emitting device fabricated in Example 1 are shown in Table 3. Figure 5 , Figure 6 , Figure 7 and Figure 8 middle.

[0358] [Table 3]

[0359]

[0360]

[0361] Referring to Table 3, it can be confirmed that the light-emitting device of Example 1 has excellent driving voltage, current density, brightness, current efficiency and external quantum efficiency.

Claims

1. A quantum dot, said quantum dot comprising: Core, including indium, A 1 and A 2 ; as well as A shell, covering the core, wherein, A 1 It is nitrogen, phosphorus, arsenic, antimony, or any combination thereof. A 2 It is aluminum, gallium, or any combination thereof. The core includes a first region and a second region covering the first region. The first region does not include A 2 And includes indium and A 1 , The second region includes In and A 1 and A 2 , In and A 2 They are alloyed together in the second region. The first region includes InN, InP, InAs, InSb, InNP, InNAs, InNSb, InPAs, or InPSb. The second region includes InGaN, InGaP, InGaAs, InGaSb, InGaNP, InGaNAs, InGaNSb, InGaPAs, InGaPSb, InAlN, InAlP, InAlAs, InAlSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InGaAlN, InGaAlP, InGaAlAs, InGaAlSb, InGaAlNP, InGaAlNAs, InGaAlNSb, InGaAlPAs, or InGaAlPSb. A included in the second region 2 The concentration of A has 2 The concentration of the substance gradually increases along a concentration gradient from the interface between the first region and the second region toward the surface of the core.

2. The quantum dot according to claim 1, wherein, A 2 It is introduced into the second region via a cation exchange reaction.

3. The quantum dot according to claim 1, wherein, A included in the first region 1 With A included in the second region 1 same.

4. The quantum dot according to claim 1, wherein, The shell comprises a group III-V semiconductor compound, a group II-VI semiconductor compound, or any combination thereof.

5. The quantum dot according to claim 4, wherein, The III-V semiconductor compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof. The group II-VI semiconductor compounds include ZnS, ZnSe, ZnTe, ZnO, MgS, MgSe, ZnSeS, ZnSeTe, ZnSTe, MgZnS, MgZnSe, or any combination thereof.

6. The quantum dot according to claim 4, wherein, The shell comprises: i) a first shell covering the core; and ii) a second shell covering the first shell. The first shell comprises GaP, ZnSe, ZnSeS, or any combination thereof, and The second shell comprises ZnS.

7. The quantum dot according to claim 1, wherein, The quantum dot emits blue light with a maximum emission wavelength in the range of 400 nm to 490 nm.

8. The quantum dot according to claim 1, wherein, The core further includes a third region, which i) covers the second region and ii) does not include indium and includes A. 1 and A 2 .

9. A method for preparing quantum dots, wherein the quantum dots comprise: Core, including indium, A 1 and A 2 ; as well as A shell, covering the core, wherein, A 1 It is nitrogen, phosphorus, arsenic, antimony, or any combination thereof. A 2 It is aluminum, gallium, or any combination thereof. The core includes a first region and a second region covering the first region. The first region does not include A 2 And includes indium and A 1 , The second region includes In and A 1 and A 2 , In and A 2 They are alloyed together in the second region. The first region includes InN, InP, InAs, InSb, InNP, InNAs, InNSb, InPAs, or InPSb. The second region includes InGaN, InGaP, InGaAs, InGaSb, InGaNP, InGaNAs, InGaNSb, InGaPAs, InGaPSb, InAlN, InAlP, InAlAs, InAlSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InGaAlN, InGaAlP, InGaAlAs, InGaAlSb, InGaAlNP, InGaAlNAs, InGaAlNSb, InGaAlPAs, or InGaAlPSb. A included in the second region 2 The concentration of A has 2 The concentration of the substance gradually increases along a concentration gradient from the interface between the first region and the second region toward the surface of the core, and the method includes the following steps: Provides In and A 1 The first particle; By exposing the first particle to a temperature greater than 250°C and less than or equal to 310°C, the first particle is reacted with a mixture containing A. 2 The composition of the precursor contacts to form the core; and A shell is formed to cover the core.

10. The method according to claim 9, wherein, Formation including In, A 1 and A 2 The step of the core includes forming a second region of the core by a cation exchange reaction, in which the first particle is reacted with a cation exchange reaction containing A 2 In the composition contact of the precursor, at least a portion of the indium cations of the first particle are A 2 Cation substitution.

11. The method according to claim 9, wherein, The A-containing 2 Precursors include those containing A 2 Halides, containing A 2 Oxides, containing A 2 Nitrogen compounds, containing A 2 Antimonides, containing A 2 Nitrogen oxides, containing A 2 Sulfides, containing A 2 Halogen oxides, containing A 2 Halogen oxide hydrates, containing A 2 Nitrates, containing A 2 Nitrate salts, containing A 2 Sulfates, containing A 2 Sulfate salts, containing A 2 Amine derivatives, containing A 2 Hydrocarbon derivatives or any combination thereof.

12. An optical component comprising a quantum dot according to any one of claims 1 to 8.

13. An electronic device comprising a quantum dot according to any one of claims 1 to 8.

14. The electronic device of claim 13, wherein the electronic device comprises: light source; as well as The color conversion component is arranged in the path of the light emitted from the light source. The color conversion component includes the quantum dot.

15. The electronic device of claim 13, wherein the electronic device comprises: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an emitting layer between the first electrode and the second electrode. The light-emitting device includes the quantum dot.

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