Method and apparatus for processing a substrate

Abstract

Methods and apparatuses for controlling the temperature of components in a process chamber that are heated by plasma or a heater and cooled by a flow of coolant through a heat exchanger. For example, an apparatus can include a chuck assembly and / or a plasma source including a respective cooling plate, a proportional bypass valve connected between the respective cooling plate and the heat exchanger, a temperature sensor configured to measure a temperature of the coolant passing through an outlet passage of the respective cooling plate, and a controller that receives the measured temperature from the temperature sensor measurement and, in response to receiving the measured temperature, controls a flow rate of the coolant through first and second coolant output lines of the proportional bypass valve.

Description

[0001] Embodiments of the present disclosure generally relate to methods and apparatuses for processing a substrate, and more particularly to methods and apparatuses for controlling the temperature of components in a processing chamber during processing of a substrate. BACKGROUND

[0002] In a plasma processing chamber, such as a plasma etch or plasma deposition chamber, the temperature of components disposed within the processing chamber (e.g., a substrate, a substrate support, a source, etc.) during operation is an important parameter to control for the effectiveness or speed of the plasma process. For example, a temperature control system can be used to control the temperature of a chuck assembly disposed on a substrate support that supports a substrate or a source (e.g., a target, a showerhead, etc.) to adjust for a particular set point of a process recipe during a plasma process (e.g., to heat or cool the components for controlling the etch / deposition rate).

[0003] Furthermore, as microelectronic features are manufactured smaller, such that dies and resulting products can become smaller, higher temperature control accuracy is needed during plasma processing. For example, higher power plasma generates a relatively large amount of heat, and more efficient cooling is often required. Thus, the temperature control system must be very accurate, and must operate over a wide temperature range to support different processes.

[0004] Furthermore, while conventional temperature control systems are suitable for providing coolant to chamber components, such systems are not configured to control the temperature of the coolant prior to the coolant returning to a heat exchanger of the temperature control system, which can result in damage to the heat exchanger and / or increase the cooling time of the coolant at the heat exchanger. SUMMARY

[0005] Methods and apparatuses for controlling the temperature of components in a processing chamber that are heated by plasma or a heater and cooled by a flow of coolant through a heat exchanger are provided herein. In some embodiments, a processing chamber includes at least one of a chuck assembly or a plasma source including a respective cooling plate including coolant passages having an inlet passage coupled to a coolant supply line of a heat exchanger and an outlet passage coupled to a coolant return line of the heat exchanger, a proportional bypass valve connected between the respective cooling plate and the heat exchanger, the proportional bypass valve including a coolant input line connected to the coolant supply line, a first coolant output line connected to the inlet passage of the respective cooling plate, and a second coolant output line connected to the coolant return line, a temperature sensor configured to measure a temperature of the coolant passing through the outlet passage of the respective cooling plate, and a controller receiving the measured temperature from the temperature sensor and controlling a flow rate of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve in response to receiving the measured temperature.

[0006] According to at least some embodiments, a method of controlling the temperature of components in a processing chamber that are heated by plasma or a heater and cooled by a flow of coolant through a heat exchanger includes generating a plasma in the processing chamber using a plasma source, directing the plasma toward a chuck assembly configured to support a substrate, providing coolant from the heat exchanger via a proportional bypass valve connected to a respective cooling plate of at least one of the chuck assembly or the plasma source, measuring a temperature of the coolant passing through an outlet passage of the respective cooling plate, and controlling a flow rate of the coolant through a first coolant output line and a second coolant output line of the proportional bypass valve in response to receiving the measured temperature.

[0007] According to at least some embodiments, a non-transitory computer readable storage medium having stored thereon instructions that, when executed by a processor, perform a method of controlling a temperature of a component in a process chamber, the component in the process chamber being heated by a plasma or a heater and being cooled by a coolant flow through a heat exchanger. The method includes the steps of generating a plasma in the process chamber using a plasma source; directing the plasma toward a chuck assembly configured to support a substrate; providing coolant from the heat exchanger via a proportional bypass valve connected to a respective cooling plate of at least one of the chuck assembly or the plasma source; measuring a temperature of the coolant passing through an outlet passage of the respective cooling plate; and in response to receiving the measured temperature, controlling a flow rate of the coolant through first and second coolant output lines of the proportional bypass valve.

[0008] Other and further embodiments of the present disclosure are described below. BRIEF DESCRIPTION OF DRAWINGS

[0009] Embodiments of the present disclosure briefly summarized above and discussed in greater detail below can be understood by reference to the illustrative embodiments of the present disclosure depicted in the appended drawings. However, the appended drawings illustrate only typical embodiments of the present disclosure and, therefore, should not be considered limiting of its scope, as the present disclosure can admit to other equally effective embodiments.

[0010] Figure 1A is a diagram of a temperature control system according to at least some embodiments of the present disclosure.

[0011] Figure 1B is a diagram of a temperature control system according to at least some embodiments of the present disclosure.

[0012] Figure 2 is a diagram of a temperature control system according to at least some embodiments of the present disclosure.

[0013] Figure 3 is a diagram of a temperature control system according to at least some embodiments of the present disclosure.

[0014] Figure 4 is a schematic diagram of a plasma system according to at least some embodiments of the present disclosure.

[0015] Figure 5 is a flowchart of a method for processing a substrate according to at least some embodiments of the present disclosure.

[0016] For ease of understanding, the same reference indicators will have been used throughout the drawings and specific terminology will have been used with certain connotations, where possible. The drawings are not drawn to scale and will have been simplified for clarity. Elements and features of one embodiment can be beneficially incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0017] Embodiments of methods and apparatuses for controlling the temperature of one or more components in a process chamber are provided herein. More specifically, the methods include, for example, receiving a measured temperature of coolant passing through an outlet passage of a process component, and in response to receiving the measured temperature, controlling a flow rate of coolant through a first coolant output and a second coolant output of a proportional bypass valve connected to a cooling plate of the process component. The methods and apparatuses described herein significantly reduce process time, reduce the risk of arcing (e.g., by eliminating the need for re-strike plasma), increase throughput, and provide improved thermal control.

[0018] Figure 1A is a diagram of a temperature control system 100 (control system 100) in accordance with at least some embodiments of the present disclosure. In Figure 1A is described in accordance with use with an electrostatic chuck (ESC) 104 (e.g., a chuck assembly). The ESC 104 supports a substrate 106 in one or more process chamber types (e.g., a plasma 124 process chamber), as described in greater detail below. Although the present disclosure describes the ESC in the context of a plasma process chamber, the ESC described herein can be used in a variety of different chambers and for a variety of different processes. Depending on the particular implementation of the control system 100, different substrate supports can be used in place of the ESC.

[0019] The control system 100 includes one or more proportional bypass valves 140 (PBVs 140) that can be configured to continuously adjust the flow of coolant therethrough. A temperature controller 130 (such as a multiple-input multiple-output (MIMO) controller or any other type of controller) is configured to control the valves of the PBVs 140 and regulate the temperature of the ESC 104 and / or a substrate 106 supported by the ESC 104. More specifically, the temperature controller 130 is configured to receive temperature measurements from one or more sensors / probes 112, 114 (such as optical temperature sensors) of the ESC 104 as feedback to control the temperature of the ESC 104 and / or the substrate 106 and control the flow or ramp rate of coolant through the ESC 104, as described in greater detail below. The coolant can be any fluid suitable for cooling the ESC 104 and / or an upper plate 108 of the substrate 106. For example, in at least some embodiments, the coolant can include, but is not limited to, water, deionized water / glycol, fluorinated coolant (such as Fluorinert® from 3M or or Fluorinert® from Solvay Solexis, Inc. ) or any other suitable fluid, such as a fluid containing perfluorinated inert polyether.

[0020] With continued reference to Figure 1A The ESC 104 includes an upper plate 108 (e.g., a substrate support) configured to support a substrate 106, such as a silicon wafer or other type of substrate. The upper plate 108 is supported on a cooling plate 110, and one or more other supports (not shown) that can be disposed below the cooling plate 110 can be configured to move and support the substrate 106 and provide gases, electrical current, and / or other materials to the upper plate 108 and / or the substrate 106.

[0021] During some substrate processes (e.g., etching, deposition, etc.), heat 126 can be applied to the upper plate 108 and / or the substrate 106 from the plasma 124 and / or through one or more other elements and components suitable for heating the upper plate 108 and / or the substrate 106 within the processing chamber, such as a heater (not shown). The heat 126 is conducted through the substrate 106 at least partially to the upper plate 108 and the cooling plate 110. The upper plate 108 includes sensors 112, 114 configured to measure a temperature at or near the substrate 106.

[0022] The cooling plate 110 includes one or more coolant channels that receive coolant via one or more inlet channels and release the coolant via one or more outlet channels. For purposes of illustration, a plurality of coolant channels 122 are represented in the cooling plate 110. Providing a plurality of coolant channels 122 allows for independent control of the temperature of different portions of the cooling plate 110. For example, because the periphery of the ESC 104 tends to become hotter than the center of the ESC 104, separate peripheral or outer fluid channels can allow for more coolant to be applied to the periphery of the ESC 104. The cooling plate 110 can include one or more inlet channels 116 and one or more outlet channels 118 (arrows are used to represent the inlet and outlet channels 116, 118). The inlet channels 116 are connected to a first coolant output line of the PBV, and the outlet channels 118 are connected to a return line of the heat exchanger.

[0023] One or more heat exchangers of the temperature controller 130 are configured to provide coolant to the ESC 104. For example, in at least some embodiments, the heat exchanger 150 includes a coolant supply line 152 and a coolant return line 154 for providing coolant to and receiving coolant from the ESC 104, respectively. The heat exchanger 150 receives the return coolant and cools the return coolant to a predetermined temperature or regulated amount. The heat exchanger 150 can be thermostatically controlled or the heat exchanger 150 can apply a fixed amount of cooling based on the particular design of the processing chamber. The temperature of the coolant circulated through the ESC 104 is controlled by the temperature of the coolant supplied and by the flow rate of the coolant through the ESC 104 (e.g., circulating through the plurality of coolant passages 122 during operation).

[0024] The PBV 140 is connected between the ESC 104 and the heat exchanger 150. The PBV 140 includes a coolant input line 142 connected to the coolant supply line 152 of the heat exchanger 150. The coolant input line 142 is connected to a valve 144 connected to a first coolant output line 146 (indicated in dashed lines inside the PBV 140) connected to the inlet passage 116 of the ESC 104 and a second coolant output line 148 (also indicated in dashed lines inside the PBV 140) connected to the coolant return line 154 of the heat exchanger 150. The valve 144 includes a plurality of ports (not shown, e.g., at least two ports) controlled by the temperature controller 130 to control the flow path of the coolant through the PBV 140, as described in more detail below.

[0025] The temperature controller 130 receives temperature measurements / signals from the sensors 112, 114 to determine the temperature of the upper plate 108 and / or the substrate 106. Based on the received temperature measurements, the temperature controller 130 opens and closes the plurality of ports of the valve 144 in the PBV 140 to control the flow path of the coolant through the PBV 140 and the flow rate of the coolant through the plurality of coolant passages 122 of the ESC 104. More specifically, using the received temperature measurements, the temperature controller 130 can generate valve control signals (e.g., analog voltages, digital pulse width modulation (PWM) signals, and / or pneumatic signals) and provide the control signals to the PBV 140. Additionally, the temperature controller 130 can also receive pressure, temperature, and / or other signals from the PBV 140 and the sensors 112, 114, which can be used to control one or more valves disposed within the heat exchanger 150 and / or the temperature of the coolant provided by the heat exchanger 150.

[0026] Figure 1Bis a diagram of a control system 100 according to at least some embodiments of the present disclosure. For purposes of illustration, the heat exchanger 150 is shown with a coolant supply line 152 and a coolant return line 154 on the top of the heat exchanger 150.

[0027] The functionality of the control system 100 is substantially similar to the control system 100 previously described with respect to Figure 1A . Accordingly, only those features unique to the features of Figure 1B are described herein. For example, the control system 100 can also be configured to control the temperature of one or more other components in the process chamber. For example, as shown in Figure 1B , the temperature controller 130 can be configured to control the temperature of a source 160 (e.g., a target, a showerhead, or other processing component) within the process chamber. As with the ESC 104, the temperature of the source 160 tends to increase during processing, e.g., due to heat 126 from the plasma 124. Accordingly, instead of coupling the cooling plate 110 to the ESC 104, the cooling plate 110 can be coupled to the source 160. For example, in at least some embodiments, such as when the source 160 is a showerhead assembly, the cooling plate 110 can be coupled to a blocker plate 161 and / or a gas distribution plate 162 (such as a showerhead). For example, in at least some embodiments, the cooling plate 110 can be coupled to the blocker plate 161. In such embodiments, the sensors 112, 114 can be coupled to the blocker plate 161 or the gas distribution plate 162. For example, in at least some embodiments, the sensors 112, 114 can be coupled to the blocker plate 161. During processing, the temperature of the blocker plate 161 and / or the gas distribution plate 162 is controlled / monitored via coolant supplied to the blocker plate 161 and / or the gas distribution plate 162, as described in greater detail below.

[0028] Figure 2 is a diagram of a control system 200 according to at least some embodiments of the present disclosure. The control system 200 can be configured to operate with the ESC 104 and / or the source 160, but for purposes of illustrative purposes, the control system 200 is described according to use with the ESC 104. For example, the PBV 140 can be incorporated into a hybrid water interface box (wFib) 260. The functionality of the control system 200 including the PBV 140 incorporated into the hybrid wFib 260 is substantially similar to the control system 100 of Figure 1A and Figure 1B . Accordingly, only those aspects of the control system 200 unique to the control system 100 of Figure 2 are described herein.

[0029] The mixing wFib 260 can include one or more of coolant fluid lines, pneumatic valves (which can function as stop valves and / or pulse valves for flow rate control in one or more modes, such as PWM mode), tees, fluid distribution manifolds, etc. Rather than the coolant input line 142 of the PBV 140 being directly connected to the coolant supply line 152 of the heat exchanger 150, and the second coolant output line 148 of the PBV 140 being directly connected to the coolant return line 154 of the heat exchanger 150, Figure 1A and Figure 1B Rather, the coolant input line 142 and the second coolant output line 148 are connected to one or more components of the mixing wFib 260 (e.g., coolant lines within the mixing wFib 260). For illustrative purposes, the coolant input line 142 of the PBV 140 is shown as being connected to a coolant supply line 262 of the mixing wFib 260, which is connected to the coolant supply line 152 of the heat exchanger 150, and the second coolant output line 148 of the PBV 140 is shown as being connected to a coolant return line 264 of the mixing wFib 260, which is connected to the coolant return line 154 of the heat exchanger 150.

[0030] Additionally, the temperature controller 130 can be connected to the PBV 140 and the mixing wFib 260 for controlling the mixing wFib 260 during use. For example, the temperature controller 130 is configured to open and close one or more valves within the mixing wFib 260 to control the flow path of coolant through the mixing wFib 260 and the flow rate of coolant through the plurality of coolant passages 122 of the ESC 104.

[0031] Figure 3 is a diagram of a control system 300 in accordance with at least some embodiments. More specifically, Figure 3The control system 300 illustrates a two-zone (or two-loop) system with two independent coolant flow zones. The control system 300 can be configured to operate with the ESC 104 and / or the source 160, but for illustrative purposes, the control system 300 is described in accordance with use with the ESC 104. In such embodiments, one or more PBVs 140 can be used in the manner previously described. For example, in at least some embodiments, two independently controlled PBVs (e.g., two PBVs 140) can be connected to the coolant supply line 152 and the coolant return line of the heat exchanger 150. For illustrative purposes, two PBVs 140a and 140b are illustrated as being disposed within a PBV housing 340 that is connected to the temperature controller 130. Alternatively, the two PBVs 140a and 140b can be two separate PBVs that are not housed within a PBV housing, such as described above with respect to Figure 1A and Figure 1B

[0032] ​Each of the PBVs 140a, 140b is connected to a heat exchanger 150. For example, in at least some embodiments, a coolant supply line 152 of the heat exchanger 150 supplies coolant to each of the PBVs 140a, 140b via, for example, a T-pipe 342 disposed within the PBV housing 340 and connected to a respective one of the coolant input lines (not shown) of each of the PBVs 140a, 140b. Alternatively, two separate coolant supply lines 152 can supply coolant to respective ones of the coolant supply lines of each of the PBVs 140a, 140b. Similarly, each of the respective ones of the first coolant output lines 146a, 146b of each of the PBVs 140a, 140b is connected to a first coolant output line 346a, 346b of the PBV housing 340, which in turn is connected to a respective one of the inlet channels 116a, 116b. The inlet channels 116a, 116b supply coolant to separate ones of the plurality of coolant channels 122 within the cooling plate 110. Coolant can be returned from the cooling plate 110 via the output channels 118a, 118b, which are connected to respective ones of the coolant return lines 348a, 348b. The coolant return lines 348a, 348b can join at any point after exiting the ESC 104. For example, in at least some embodiments, the coolant return lines 348a, 348b can join at a reverse T-pipe 344, which is connected to a coolant return line 346 of the PBV housing 340, which is connected to a coolant return line 154 of the heat exchanger 150. Further, each of the PBVs 140a, 140b includes a respective second coolant return line 148a, 148b connected to the coolant return line 346.

[0033] In at least some embodiments, as described above, since the periphery of the ESC 104 tends to be hotter than the center of the ESC 104, one of the inlet channels 116a, 116b can be connected to separate peripheral or outer fluid channels (OFCs) of the plurality of coolant channels 122, while the other of the inlet channels 116a, 116b can be connected to a central or inner fluid channel (IFC) of the plurality of coolant channels 122.

[0034] In at least some embodiments, the hybrid wFib 260 can be connected to or disposed within the PBV housing 340. In such embodiments, the hybrid wFib 260 can be connected between the T-pipe 342 and the heat exchanger 150 such that the coolant path is from the coolant supply line 152 of the heat exchanger 150 to the hybrid wFib 260 then to the T-pipe 342 and then to each of the PBVs 140a, 140b.

[0035] Figure 4 FIG. 1 is a schematic diagram of a plasma system 100 (system 100) according to at least some embodiments of the present disclosure. The system 100 can be configured to perform one or more plasma processes on a substrate. For example, the system 100 can be configured to perform a physical deposition process, a chemical vapor deposition process, an atomic layer deposition process, an etch process, etc. For example, in at least some embodiments, the system 100 can be configured to perform an etch process and can include one or more of a processing chamber, such as one or more of an etch line of the CENTURA® system (e.g., available from Applied Materials, Inc.). ) system (e.g., available from Applied Materials, Inc.). Other commercially available etch chambers can similarly utilize the ESC described herein.

[0036] The system 400 includes a processing chamber 402 including a chamber body 405 that can be grounded. Process gas is supplied from a gas source(s) 429 connected to the chamber body 405 through a mass flow controller 449 to an interior volume 403 (e.g., a processing region) of the processing chamber 402.

[0037] The processing chamber 402 can be pumped down via an exhaust valve 451 connected to a high capacity vacuum pump stack 455. When plasma power is applied to the processing chamber 402, a plasma can be formed in the interior volume 403 above a substrate 410 (e.g., substrate 106).

[0038] A plasma bias power source 425 (e.g., an RF power source or a DC power source) is coupled to the ESC 442 (e.g., the ESC 104) to strike a plasma. In at least some embodiments, the plasma bias source 425 is an RF power source. The plasma bias power source 425 can provide bias power at a frequency of about 2 MHz to about 60 MHz, and can be, for example, in the 13.56 MHz band. The plasma bias power source 425 can be coupled to an RF matching network (not shown) and to a lower electrode (not shown, e.g., a chuck electrode) via a power conduit 428. Additionally, in at least some embodiments, the processing chamber 402 can include a second plasma bias power source (not shown, e.g., an RF power source or a DC power source). For example, if the second plasma source is a second RF power source, the second RF power source can also be connected to the RF matching network. The second plasma bias power source can operate at about 2 MHz to about 60 MHz, and can be, for example, in the 2 MHz band.

[0039] A plasma source power 430 is coupled through another matching network (not shown) to provide high frequency source power to inductively or capacitively strike a plasma 436. The plasma source power 430 can have a higher frequency than the plasma bias power source 425 (such as between 100 MHz and 180 MHz), and can be, for example, in the 162 MHz band. In at least some embodiments, the plasma can be generated using one or more gases suitable for performing an etching process. The plasma is directed to the surface of the substrate 410 via, for example, a source 435 (e.g., a showerhead 138).

[0040] The substrate 410 can be loaded through an opening 415 defined through the chamber body 405. The substrate 410 (e.g., such as a semiconductor wafer) can be any wafer, substrate, or other material employed in the semiconductor processing arts. The substrate 410 can be loaded onto a top surface of a dielectric layer (or puck) 445 of the ESC 442. Clamping electrodes (not shown) can be embedded in the dielectric layer 445, and can be coupled to a bias power source 479 to provide electrostatic forces to clamp the substrate 410 to the dielectric layer 445.

[0041] One or more cooling panels 444 can be provided on one or more components of the process chamber 402. For purposes of illustration, respective cooling panels 444a, 444b are shown disposed on the source 435 and the ESC 442. As previously described, the cooling panels 444 can include one or more coolant channels 422 (a plurality of coolant channels 422 are shown in the cooling panels 444), which receive coolant via one or more inlet channels 416 and release the coolant via one or more outlet channels 418 (arrows are used to illustrate a single inlet channel 416 and outlet channel 418). In at least some embodiments, as described above, the inlet channels 416 (of coolant supply lines 152 connected to heat exchanger 150) are connected to the first coolant output line 146 of the PBV 140 for receiving coolant, while the outlet channels 418 are connected to the coolant return line 154 of the heat exchanger 150, which is connected to the second coolant output line 148 of the PBV 140.

[0042] In at least some embodiments, each of the cooling panels 444a, 444b can be connected to the same heat exchanger, as shown. Alternatively, each of the cooling panels 444a, 444b can be connected to separate heat exchangers. Figure 4

[0043] To facilitate control of the process chamber 402, the process chamber 402 includes a controller 470. The controller 470 includes a central processing unit (CPU) 472, which can be one of any form of general-purpose computer processors which can be used in an industrial setting for controlling various chambers and co-processors, such as a programmable logic controller (PLC). A memory 473 is coupled to the CPU 472, and the memory 473 can be a non-transitory computer-readable storage medium and can be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk drives, hard disk drives, or any other form of digital storage. Support circuits 474 (e.g., I / O circuitry) including one or more of a power supply, clock, cache, etc. are coupled to the CPU 472 for supporting the operation of the processor in a conventional manner. Generation, heating, and other processes of charged species are typically stored as software routines in the memory 473. The software routines can also be stored and / or executed by a second CPU (not shown) located remotely from the process chamber 402 being controlled by the CPU 472.

[0044] ​The memory 473 is in the form of a computer readable storage medium containing instructions that, when executed by the CPU 472, facilitate operation of the processing chamber 402. The instructions in the memory 473 are in the form of a program product, such as a program implementing the methods of the present disclosure. The program code can be in any of a variety of different program languages. In one example, the present disclosure can be implemented as a program product stored on a computer readable storage medium for use with a computer system. The program(s) of the program product define the function of an embodiment, including the methods described in the specification. Exemplary computer readable storage media include, but are not limited to: (i) non-writable storage media (e.g., read- only memory devices within a computer such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), on which information is permanently stored; and (ii) writable storage media (e.g., floppy disks within a diskette drive or hard-disk drive or any type of solid-state random access semiconductor memory), on which information is stored that can be changed by the computer. These computer readable storage media are embodiments of the present disclosure when they bear computer readable instructions that direct the functions of the methods described herein.

[0045] In addition, the controller 470 is configured to perform at least the control functions described above with respect to the control system of Figures 1A-3 the processing chamber 402, and includes the temperature controller 130 to perform temperature control algorithms (e.g., temperature feedback control) that can be stored in the memory 473. The temperature controller 130 is coupled to one or more temperature sensors (probes) 443 (e.g., the sensor 112 and / or the sensor 114) that can be in or on the upper plate 446 of the ESC 442, and that can be in or on the source 435.

[0046] The temperature controller 130 is coupled to one or more heat exchangers (HTXs) / coolers. For example, in at least some embodiments, the temperature controller 130 is coupled to the heat exchanger 150. As described above, the flow rate of the thermal fluid or heat transfer fluid (e.g., coolant) through one or more coolant channels in the cooling plates 444a, 444b of the source 435 and the ESC 442 is controlled by the one or more PBVs 140.

[0047] The PBV 140 can be controlled by the temperature controller 130 to independently control the flow rate of coolant to each of the one or more coolant channels in the cooling plates 444a, 444b. The temperature controller 130 can also control the temperature set point used by the heat exchanger 150 to cool or heat the thermal fluid. In at least some embodiments,

[0048] Figure 5is a flowchart of a method 500 for processing a substrate according to at least some embodiments. For purposes of illustration, the method 500 is described in conjunction with use with the processing chamber 402.

[0049] At 502, a plasma (e.g., the plasma 436) can be generated in a processing chamber (e.g., the processing chamber 402). For example, in at least some embodiments, the plasma can be generated using a plasma source power 430 to provide a high frequency source power to inductively or capacitively strike one or more process gases provided from one or more gas sources (e.g., the gas sources 429) to form the plasma.

[0050] Next, at 504, the plasma can be directed toward a chuck assembly (e.g., the ESC 442) configured to support a substrate (e.g., the substrate 410). As described above, when the plasma is directed toward the chuck assembly, heat 437 from the plasma can also be applied / directed to an upper plate of the chuck assembly (and the substrate) and / or a source (e.g., the source 435).

[0051] Accordingly, to control the temperature of the upper plate and / or source of the chuck assembly, at 506, coolant from a heat exchanger (e.g., the heat exchanger 150) can be provided to the cooling plate of the chuck assembly and / or the source via a PBV connected to the chuck assembly and / or the source. For example, the PBV can be one or more of the PBVs as previously described (e.g., the PBVs 140).

[0052] During processing of the substrate, at 508, a temperature of the coolant passing through the outlet channel of the cooling plate can be measured. For example, in at least some embodiments, a temperature controller (e.g., the temperature controller 130) can use, for example, a temperature sensor (e.g., the temperature sensor 443) to measure the temperature of the coolant passing through the outlet channel of the cooling plate.

[0053] Next, at 510, in response to receiving the measured temperature, a flow rate of the coolant through the first coolant output line and the second coolant output line of the PBV can be continuously controlled. For example, the first coolant output line of the PBV can be controlled to provide a relatively high / low flow rate of the coolant through the chuck assembly and / or the source. The flow rate of the coolant through the chuck assembly and / or the source is directly proportional to the amount of heat that can be transferred from the chuck assembly and / or the source to the coolant, e.g., the higher the flow rate of the coolant, the more heat that can be transferred. Additionally, the second coolant output line can be controlled to provide a relatively high / low flow rate of the coolant to the return line of the heat exchanger, e.g., to cool the coolant before the coolant returns to the heat exchanger.

[0054] The PBV allows for multiple coolant flow capabilities through each of the first and second output lines of the PBV. Specifically, the flow of coolant through the PBV can be controlled such that the flow through the ports of the valve (e.g., valve 144) of the PBV can be directed to the first and second output lines of the PBV. More specifically, the flow output of coolant through the PBV is always 100% (e.g., from about 0 to about 100% through either of the first and second output lines). For example, in at least some embodiments, 0 to 100% to the port of the first output line has the opposite effect as 100% to 0 to the port of the second output line, until both ports can have a 50 / 50 split. For example, when the port to the first output line is about 100% (e.g., a fully open configuration), then the port to the second output line can be about 0 (e.g., a fully closed configuration), and vice versa.

[0055] The temperature controller continuously measures / monitors the temperature of the upper plate of the chuck assembly, the source, and / or the coolant through the exit channel(s) of the cooling plate during substrate processing. The temperature controller provides a constant coolant flow to the return line of the cooling plate of the chuck assembly and / or the cooling plate and heat exchanger of the source of the processing chamber. Thus, when the measured temperature of the upper plate of the chuck assembly, the source, and / or the coolant through the exit channel(s) of the cooling plate changes (e.g., increases / decreases), the PBV can be controlled to increase or decrease the coolant flow to the processing chamber and / or the heat exchanger return line.

[0056] For example, when the temperature of the upper plate of the chuck assembly and / or the source increases (e.g., increases to a predetermined temperature) due to the plasma in the processing chamber during processing, the coolant flow can be automatically increased to the chuck assembly and / or the source of the processing chamber using the PBV.

[0057] For example, in at least some embodiments, the temperature controller can be configured to control the PBV to automatically increase the coolant flow to the chuck assembly from about 50% to about 75%, and can decrease the coolant flow to the heat exchanger from 50% to about 25%. When the temperature of the upper plate of the chuck assembly and / or the substrate decreases (e.g., decreases to a predetermined temperature), the temperature controller can be configured to control the PBV to automatically decrease the coolant flow to the chuck assembly from about 75% back to about 50%, and can increase the coolant flow to the heat exchanger from 25% back to about 50%. Maintaining a more stable temperature on the upper plate of the chuck assembly and / or the substrate can reduce, if not eliminate, the effects of thermal swings due to plasma on and off, which can increase the performance of the processing chamber, the uniformity of substrate processing, and can provide more consistent substrate processing results for a given recipe.

[0058] It can be appreciated that the temperature controller can also be configured to automatically increase / decrease the coolant flow to the source in a similar manner with the PBV. In at least some embodiments, the temperature controller can be configured to simultaneously and independently control the coolant flow to each of the chuck assembly and the source.

[0059] When the temperature of the coolant in the return line of the heat exchanger increases (e.g., above a predetermined temperature) as a result of cooling the upper plate and / or the source during processing, the coolant flow can be automatically increased to the return line of the heat exchanger using the PBV. For example, in at least some embodiments, the temperature controller can be configured to control the PBV to automatically decrease the coolant flow to the chuck assembly (and / or the source) from about 50% to about 25%, and can increase the coolant flow to the heat exchanger from 50% to about 75%. When the temperature of the coolant in the return line decreases (e.g., to the predetermined temperature), the temperature controller can be configured to control the PBV to automatically increase the coolant flow to the chuck assembly (and / or the source) from about 25% back to about 50%, and can decrease the coolant flow to the heat exchanger from 75% back to about 50%. Maintaining a constant temperature of the coolant back to the heat exchanger can significantly reduce, if not eliminate, the effects of pressure and flow spikes at the heat exchanger.

[0060] In at least some embodiments, the controller can be configured to control the chuck assembly according to one type of control system, and can be configured to control the source according to another type of control system. For example, the controller can be configured to control the chuck assembly according to the control system 100 of Figure 1A , and can be configured to control the source according to the control system of Figure 2 , or Figure 3 , or vice versa.

[0061] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof.

Claims

1. A process chamber, comprising: at least one of a chuck assembly or a plasma source, the at least one of the chuck assembly or the plasma source including a respective cooling plate, the respective cooling plate including a coolant channel having an inlet channel coupled to a coolant supply line of a heat exchanger and an outlet channel coupled to a coolant return line of the heat exchanger; a proportional bypass valve connected between the respective cooling plate and the heat exchanger, the proportional bypass valve including a coolant input line connected to the coolant supply line, a first coolant output line connected to the inlet channel of the respective cooling plate, and a second coolant output line connected to the coolant return line; a temperature sensor configured to measure a temperature of coolant passing through the outlet channel of the respective cooling plate; and a controller receiving the measured temperature from the temperature sensor and controlling a flow rate of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve in response to receiving the measured temperature.

2. The process chamber of claim 1, wherein the first coolant output line of the proportional bypass valve is in a fully open configuration and the second coolant output line of the proportional bypass valve is in a fully closed configuration when a substrate is initially being processed.

3. The process chamber of claim 1, further comprising a hybrid water interface box (wFib) in which the proportional bypass valve is housed.

4. The process chamber of claim 1, wherein the proportional bypass valve is a first proportional bypass valve, and further comprising a second proportional bypass valve.

5. The process chamber of claim 4, wherein the inlet channel of the respective cooling plate is a first inlet channel, and the respective cooling plate further includes a second inlet channel, wherein each of the first inlet channel and the second inlet channel is connected to a first coolant output line of the first proportional bypass valve and a first coolant output line of the second proportional bypass valve, respectively, and wherein at least one of a second coolant output line of the first proportional bypass valve or a second coolant output line of the second proportional bypass valve is connected to the coolant return line of the heat exchanger.

6. A method of controlling a temperature of a component in a process chamber, the component in the process chamber being heated by a plasma or a heater and being cooled by a flow of coolant through a heat exchanger, the method comprising the steps of: generating a plasma in a process chamber using a plasma source; directing the plasma toward a chuck assembly, the chuck assembly being configured to support a substrate; ​ coolant from a heat exchanger is provided via a proportional bypass valve connected to a respective cooling plate of at least one of the chuck assembly or the plasma source; a temperature of the coolant passing through an outlet passage of the respective cooling plate is measured; and a flow rate of the coolant through a first coolant output line and a second coolant output line of the proportional bypass valve is controlled in response to receiving the measured temperature.

7. The method of claim 6, wherein when the substrate is initially being processed, the first coolant output line of the proportional bypass valve is in a fully open configuration and the second coolant output line of the proportional bypass valve is in a fully closed configuration.

8. The method of any of claims 6 or 7, wherein the step of controlling the flow rate of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve includes at least one of partially closing the first coolant output line of the proportional bypass valve or partially opening the second coolant output line of the proportional bypass valve.

9. The method of claim 6, wherein the proportional bypass valve is a first proportional bypass valve, and further comprising a second proportional bypass valve.

10. The method of claim 9, wherein the respective cooling plate includes a first inlet passage and a second inlet passage, wherein each of the first inlet passage and the second inlet passage is connected to a first coolant output line of the first proportional bypass valve and a first coolant output line of the second proportional bypass valve, and wherein at least one of a second coolant output line of the first proportional bypass valve or a second coolant output line of the second proportional bypass valve is connected to a coolant return line of the heat exchanger.

11. The method of claim 10, wherein the step of providing the coolant from the heat exchanger comprises the step of: the coolant is provided to each of the first inlet passage and second inlet passage of the respective cooling plate via the first coolant output line of the first proportional bypass valve and the first coolant output line of the second proportional bypass valve, respectively.

12. The method of claim 11, wherein the outlet passage is a first outlet passage, and the corresponding cooling plate includes a second outlet passage, and further comprising the steps of: a temperature of the coolant passing through each of the first outlet passage and the second outlet passage of the respective cooling plate is measured.

13. The method of any one of claims 9 to 12, further comprising the step of: a flow rate of at least one of the coolant through the first coolant output line of the first proportional bypass valve or the first coolant output line of the second proportional bypass valve is controlled, and a flow rate of the coolant through the second coolant output line of the first proportional bypass valve or the second coolant output line of the second proportional bypass valve is controlled in response to receiving the measured temperature.

14. A non-transitory computer readable storage medium having stored thereon instructions which, when executed by a processor, perform a method of controlling a temperature of a component in a process chamber, the component in the process chamber being heated by a plasma or a heater and being cooled by a coolant flow through a heat exchanger, the method comprising the steps of: generating a plasma in a processing chamber using a plasma source; directing the plasma toward a chuck assembly configured to support a substrate; providing coolant from a heat exchanger via a proportional bypass valve connected to a respective cooling plate of at least one of the chuck assembly or the plasma source; measuring a temperature of the coolant passing through an outlet passage of the respective cooling plate; and controlling a flow rate of the coolant through first and second coolant output lines of the proportional bypass valve in response to receiving the measured temperature.

15. The non-transitory computer-readable storage medium of claim 14, wherein the first coolant output line of the proportional bypass valve is in a fully open configuration and the second coolant output line of the proportional bypass valve is in a fully closed configuration when the substrate is initially being processed.

16. The non-transitory computer-readable storage medium of any of claims 14 or 15, wherein controlling the flow rate of the coolant through the first and second coolant output lines of the proportional bypass valve comprises at least one of partially closing the first coolant output line of the proportional bypass valve or partially opening the second coolant output line of the proportional bypass valve.

17. The non-transitory computer-readable storage medium of claim 14, wherein the proportional bypass valve is a first proportional bypass valve, and further comprising a second proportional bypass valve.

18. The non-transitory computer-readable storage medium of claim 17, wherein the respective cooling plate comprises first and second inlet passages, wherein each of the first and second inlet passages is connected to a first coolant output line of the first proportional bypass valve and a first coolant output line of the second proportional bypass valve, and wherein at least one of a second coolant output line of the first proportional bypass valve or a second coolant output line of the second proportional bypass valve is connected to a coolant return line of the heat exchanger. providing the coolant to each of the first and second inlet passages of the respective cooling plate via the first coolant output line of the first proportional bypass valve and the first coolant output line of the second proportional bypass valve, respectively.

19. The non-transitory computer readable storage medium of claim 18, wherein the step of providing the coolant from the heat exchanger comprises the step of: measuring a temperature of the coolant passing through each of the first and second outlet passages of the respective cooling plate.

20. The non-transitory computer readable storage medium of any one of claims 14, 15, or 17-19, wherein the outlet passage is a first outlet passage, and the respective cooling plate includes a second outlet passage, and further comprising the steps of:

19. The non-transitory computer-readable storage medium of any of claims 14-18, wherein the proportional bypass valve is a proportional flow valve.

Images