A high-temperature purification crucible for producing high-purity semiconductor substrate powder materials
By designing a high-temperature purification crucible with hollow columns and built-in parts, the problems of temperature inconsistency and difficulty in entering gas in traditional crucibles are solved, and the effective purification of high-purity semiconductor substrate powder material is achieved, and the purity and consistency of the powder are improved.
Patent Information
- Application Number
- CN202211172324.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-09-26
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2042-09-26
AI Technical Summary
In the purification process of high-purity powder, the temperature of the crucible center and edges is inconsistent, the purification gas is difficult to enter the powder core, and the gasification impurities are difficult to eliminate, resulting in poor consistency of powder, low purity and long production cycle.
A high-temperature purification crucible is designed, including a crucible pot body and a crucible cover body. Built-in parts are installed inside the hollow column to drive the semiconductor substrate powder material to be distributed on the inner wall of the crucible pot body, and contact with the purified gas through the pores to achieve uniform purification.
By introducing an hourglass-like feeding mechanism and hollow bulge design, the problems of temperature inconsistency and difficulty in entering gas are solved, the purity and consistency of the powder are improved, the production cycle is shortened, and the powder purity level required for third-generation semiconductors is met.
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Figure CN115493404B_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of purification equipment, and particularly relates to a high-temperature purification crucible for producing high-purity semiconductor substrate powder materials. Background Art
[0002] With the rapid development of fields such as third-generation semiconductors, 5G, high-end chips, new energy vehicles, and smart power grids in China, the consumption of high-purity graphite has increased significantly. High-purity graphite is graphite with a purity greater than 99.999%, that is, the ash content is less than 10 PPM. High-purity semiconductor substrate powder is the raw material required for the synthesis of third-generation semiconductor silicon carbide.
[0003] At present, in the process of purifying high-purity powder in China, ordinary graphite crucibles are generally used for high-temperature purification of powder. However, when using ordinary graphite crucibles to purify high-purity powder, there is a problem that the temperature at the center of the crucible is inconsistent with the temperature at the edge, and it is very difficult for the purified process gas to enter the core of the powder, and it is also difficult to remove the vaporized impurities inside, resulting in poor consistency of the purified powder, low purity, and long production cycle. Summary of the Invention
[0004] The purpose of the present invention is to provide a high-temperature purification crucible for producing high-purity semiconductor substrate powder materials with a simple structure and reasonable design in order to solve the above problems.
[0005] The present invention achieves the above purpose through the following technical solutions:
[0006] A high-temperature purification crucible for producing high-purity semiconductor substrate powder materials includes a crucible body and a crucible cover. The crucible cover is detachably assembled to the top of the crucible body. A hollow column is provided in the middle of the inner wall of the crucible body, and air holes are distributed on the wall of the hollow column. The bottom side of the hollow column in the crucible body is an open structure, and purified gas is introduced into the bottom end of the hollow column.
[0007] An internal component is installed inside the hollow column. A storage component is provided on the top of the crucible cover, and the storage component is used to store semiconductor substrate powder materials. An opening and closing component is provided on the bottom side of the storage component, and the opening and closing component is used to open and close the channel for releasing semiconductor substrate powder materials. The internal component rotates driven by the purified gas and drives the semiconductor substrate powder materials released from the storage component to be distributed on the inner wall of the crucible body.
[0008] As a further optimized solution of the present invention, the internal component includes a rotating rod, a spiral disk, and an umbrella-shaped disk. The umbrella-shaped disk is installed on the outer wall of the top of the rotating rod. The axis of the rotating rod is consistent with the center line of the vertical cross-section of the umbrella surface. The rotating rod is inserted into the inner wall of the hollow column. The spiral disk is distributed on the outer wall of the rotating rod, and the spiral disk rotates around the axis of the rotating rod inside the hollow column.
[0009] As a further optimized solution of the present invention, the vertical cross-section of the umbrella surface disk is an isosceles triangle, a guiding edge is provided on the outer edge of the umbrella surface disk, and the guiding edge is a chamfer structure with the center closer to the rotating rod side.
[0010] As a further optimized solution of the present invention, the built-in member further includes guiding sheets, and the guiding sheets are distributed on the upper surface of the umbrella surface disk. The guiding sheets are in an arc structure and are used for the semiconductor substrate powder material to slide to the guiding edge.
[0011] As a further optimized solution of the present invention, a sealing rod sleeve is installed on the inner wall of the top end of the hollow column, and the rod end of the rotating rod is assembled to the inner wall of the sealing rod sleeve.
[0012] As a further optimized solution of the present invention, the crucible cover body includes a pot body cover and a hopper body. The hopper body is vertically installed on the upper surface of the pot body cover, and the opening and closing member is installed at the connection between the hopper body and the crucible pot body.
[0013] As a further optimized solution of the present invention, a hopper cover is installed on the outer wall of the top of the hopper body.
[0014] As a further optimized solution of the present invention, the opening and closing member includes, but is not limited to, a valve rod and a valve ball. The valve rod is provided on one side of the valve ball, and the valve rod drives the valve ball to rotate along the plumb plane.
[0015] As a further optimized solution of the present invention, a sealing flange is provided on the outer edge of the top end of the crucible pot body, and an air vent groove is provided between the sealing flange and the inner side wall of the pot body cover.
[0016] As a further optimized solution of the present invention, the hopper body is of a transparent structure, and a feeding scale is provided on the side wall of the hopper body.
[0017] The beneficial effects of the present invention are as follows: The present invention introduces a hourglass-shaped feeding mechanism on the traditional crucible structure, and at the same time designs the middle part of the crucible into a hollow convex form. With the injection of the purification gas, the powder is quickly attached to the crucible wall. In this way, the graphite material on the inner hollow wall can also fully absorb the temperature of the thermal field, increasing the surface area of the crucible, effectively solving the problems that the central temperature and the edge temperature of the powder in the crucible are inconsistent, the purification gas is not easy to enter the inside of the crucible to react with impurities, and the vaporized impurities in the powder are difficult to discharge, improving the purity grade of the purified powder, and ensuring that the purified powder reaches the powder purity grade required for third-generation semiconductors. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 is a schematic structural diagram of a high-temperature purification crucible assembly structure for producing high-purity semiconductor substrate powder materials proposed by the present invention;
[0019] Figure 2It is a schematic three-dimensional structure diagram of a high-temperature purification crucible for producing high-purity semiconductor substrate powder materials proposed by the present invention;
[0020] Figure 3 It is Figure 2 a schematic diagram of the crucible body structure in
[0021] Figure 4 It is Figure 2 a schematic diagram of the built-in component structure in
[0022] Figure 5 It is Figure 2 a schematic diagram of the purification process in
[0023] In the figure: 100, crucible body; 110, sealing flange; 120, filling cavity; 130, hollow column; 140, air hole; 200, crucible cover; 210, pot cover; 220, opening and closing member; 230, hopper body; 240, feeding scale; 250, hopper cover; 300, built-in component; 310, rotating rod; 320, spiral disk; 330, umbrella-shaped disk; 340, guiding edge; 350, guiding piece; 360, sealing rod sleeve. Specific Embodiments
[0024] The following further describes the present application in detail with reference to the accompanying drawings. It is necessary to point out here that the following specific embodiments are only used to further illustrate the present application and should not be construed as limiting the protection scope of the present application. Those skilled in the art can make some non-essential improvements and adjustments to the present application based on the above application content. Embodiment 1
[0025] Referring to Figures 1-5 as shown, in this embodiment, a high-temperature purification crucible for producing high-purity semiconductor substrate powder materials is proposed, which includes a crucible body 100 and a crucible cover 200. The crucible cover 200 is detachably assembled to the top end of the crucible body 100. A hollow column 130 is provided in the middle of the inner wall of the crucible body 100, and air holes 140 are distributed on the wall of the hollow column 130. The hollow column 130 is an open structure at the bottom side of the crucible body 100, and purified gas is introduced into the bottom end of the hollow column 130;
[0026] A filling cavity 120 is provided between the inside of the crucible body 100 and the outside of the hollow column 130. The inner side wall of the filling cavity 120 close to the inner side wall of the crucible body 100 is used for stacking semiconductor substrate powder materials. The inner side wall of the filling cavity 120 is roughened to fully hold the semiconductor substrate powder materials. After multi-layer stacking, under the action of gravity, they will fall into the inside of the crucible body 100;
[0027] An internal member 300 is installed inside the hollow column 130. A storage member is provided at the top of the crucible cover body 200, and the storage member is used to store the semiconductor substrate powder material. An opening and closing member 220 is provided at the bottom side of the storage member, and the opening and closing member 220 is used to open and close the channel for releasing the semiconductor substrate powder material. The internal member 300 rotates driven by the purification gas, and drives the semiconductor substrate powder material released from the storage member to be distributed on the inner wall of the crucible pot body 100.
[0028] The internal member 300 includes a rotating rod 310, a spiral disk 320 and an umbrella surface disk 330. The umbrella surface disk 330 is installed on the outer wall of the top of the rotating rod 310. The axis of the rotating rod 310 is consistent with the center line of the vertical section of the umbrella surface. The rotating rod 310 is inserted into the inner wall of the hollow column 130. The spiral disk 320 is distributed on the outer wall of the rotating rod 310, and the spiral disk 320 rotates around the axis of the rotating rod 310 inside the hollow column 130.
[0029] The vertical section of the umbrella surface disk 330 is an isosceles triangle. A guiding edge 340 is provided on the outer edge of the umbrella surface disk 330, and the guiding edge 340 is a chamfer structure with the center of the circle closer to the rotating rod 310 side.
[0030] The internal member 300 further includes guiding pieces 350, and the guiding pieces 350 are distributed on the upper surface of the umbrella surface disk 330. The guiding pieces 350 are in an arc structure, and the guiding pieces 350 are used for the semiconductor substrate powder material to slide to the guiding edge 340.
[0031] A sealing rod sleeve 360 is installed on the inner wall of the top end of the hollow column 130, and the rod end of the rotating rod 310 is assembled into the inner wall of the sealing rod sleeve 360.
[0032] The crucible cover body 200 includes a pot body cover 210 and a hopper body 230. The hopper body 230 is vertically installed on the upper surface of the pot body cover 210, and the opening and closing member 220 is installed at the connection between the hopper body 230 and the crucible pot body 100.
[0033] A hopper cover 250 is installed on the outer wall of the top of the hopper body 230, and the hopper cover 250 is used to seal the hopper body 230.
[0034] The opening and closing member 220 includes, but is not limited to, a valve rod and a valve ball. The valve rod is provided on one side of the valve ball. The valve rod drives the valve ball to rotate along the plumb surface, and drives the valve ball to connect the inside of the hopper body 230 and the crucible pot body 100 by rotating the valve rod.
[0035] A sealing flange 110 is provided on the outer edge of the top end of the pot body cover 210, and an air vent groove is provided between the sealing flange 110 and the inner side wall of the pot body cover 210. The gas overflow is realized through the air vent groove.
[0036] The hopper body 230 is of a transparent structure, and a blanking scale 240 is provided on the side wall of the hopper body 230.
[0037] It should be noted that when using the high-temperature purification crucible for producing high-purity semiconductor substrate powder materials, the crucible body 100 is placed in the purification heating equipment. The end of the hollow column 130 at the bottom of the crucible body 100 is connected to the purification gas. The semiconductor substrate powder material to be purified is placed in the hopper body 230, compacted and sealed, the valve ball is closed, the crucible cover body 200 is covered, and the purification operation is started;
[0038] During purification, first, the impurity gas in the crucible body 100 is discharged by passing the purification gas for 30 - 45 s. At this time, the opening and closing member 220 is opened, and the opening and closing amount is observed through the feeding scale 240. The opening and closing member 220 opens the communication through groove with the pot body, and the powder falls through the through groove;
[0039] When the opening and closing member 220 is opened, the semiconductor substrate powder material to be purified falls out from the hopper body 230, similar to an hourglass structure. The powder falls onto the umbrella surface disk 330, and the umbrella surface disk 330 causes the semiconductor substrate powder material to slide along the inclined surface. At this time, the gas is still continuously input, and the gas drives the spiral disk 320 to rotate. The spiral disk 320 drives the rotating rod 310 to rotate, and the rotating rod 310 drives the umbrella surface disk 330 thereon to rotate. When the semiconductor substrate powder material falls onto the umbrella surface disk 330, it is thrown to the guide piece 350. At the same time, the guide piece 350 causes the semiconductor substrate powder material to slide along its arc-shaped wall body to the guide edge 340. The chamfer structure of the guide edge 340 drives the semiconductor substrate powder material to impact downward onto the inner wall body of the crucible body 100. Due to the roughness of the inner wall of the crucible body 100, the powder is retained and adhered to the wall body. At the same time, the gas blown out from the air holes 140 also drives the falling powder to adhere to the wall body. The purification gas fully exchanges with the powder adhered to the inner surface of the pot body, driving and shortening the heating stroke, enabling the semiconductor substrate powder to quickly heat up in a short time, improving the purification cycle of the semiconductor substrate powder, and shortening the conveying stroke of the purification gas and the internal semiconductor substrate powder, making the purification gas contact the semiconductor substrate powder more frequently and improving the purification effect;
[0040] At the same time, a number of uniformly distributed air holes 140 with a diameter of 0.5 - 1.0 mm are drilled on the hollow column 130. When the purification gas path enters from the bottom middle, it enters the crucible interior through the air holes 140 on the inner surface of the crucible to contact and react with the semiconductor substrate powder;
[0041] The direction of the air holes 140 is between 30° and 40° obliquely downward, avoiding the purified powder inside from entering the hollow column 130 through the air holes 140 and reducing losses;
[0042] The external threads on the side wall of the outer crucible cylinder are evenly distributed with ventilation grooves along the circumferential direction. The specifications of the ventilation grooves are ventilation grooves with a height of 2 mm, a width of 1 mm, and a depth of 1 mm. After the purification gas enters the crucible from the bottom of the crucible through the air holes 140 of the inner crucible cylinder and reacts with the impurities of the semiconductor substrate powder, it is discharged to the outside of the crucible through the gas discharge channel at the top of the crucible, achieving the purpose of purifying the powder and making the purified powder meet the purity requirements required by third-generation semiconductors.
[0043] The embodiments of this example have been described above in conjunction with the accompanying drawings. However, this example is not limited to the above specific implementation manners. The above specific implementation manners are merely illustrative and not restrictive. Under the inspiration of this example, those of ordinary skill in the art can also make many forms without departing from the purpose of this example and the scope protected by the claims, and all belong to the protection scope of this example.
Claims
1. A high-temperature purification crucible for producing high-purity semiconductor substrate powder materials, comprising a crucible body (100) and a crucible cover body (200). Characterized in that: The crucible cover body (200) is detachably assembled to the top end of the crucible body (100). A hollow column (130) is provided in the middle of the inner wall of the crucible body (100), and air holes (140) are distributed on the wall of the hollow column (130). The bottom side of the hollow column (130) located in the crucible body (100) is an open structure, and a purification gas is introduced into the bottom end of the hollow column (130). An internal member (300) is installed inside the hollow column (130). A storage member is provided on the top of the crucible cover body (200), and the storage member is used for storing semiconductor substrate powder materials. An opening and closing member (220) is provided on the bottom side of the storage member, and the opening and closing member (220) is used for opening and closing the channel for releasing semiconductor substrate powder materials. The internal member (300) rotates driven by the purification gas, and drives the semiconductor substrate powder materials released from the storage member to be distributed on the inner wall of the crucible body (100). The internal member (300) includes a rotating rod (310), a spiral disk (320) and an umbrella-shaped disk (330). The umbrella-shaped disk (330) is installed on the outer wall of the top of the rotating rod (310). The axis of the rotating rod (310) is consistent with the center line of the vertical section of the umbrella surface. The rotating rod (310) is inserted into the inner wall of the hollow column (130). The spiral disk (320) is distributed on the outer wall of the rotating rod (310), and the spiral disk (320) rotates around the axis of the rotating rod (310) inside the hollow column (130). The vertical section of the umbrella-shaped disk (330) is an isosceles triangle. A guiding edge (340) is provided on the outer edge of the umbrella-shaped disk (330), and the guiding edge (340) is a chamfered structure with the center of the circle closer to the rotating rod (310). The internal member (300) further includes guiding pieces (350), and the guiding pieces (350) are distributed on the upper surface of the umbrella-shaped disk (330). The guiding pieces (350) are in an arc shape, and the guiding pieces (350) are used for the semiconductor substrate powder materials to slide to the guiding edge (340). A sealing rod sleeve (360) is installed on the inner wall of the top end of the hollow column (130), and the rod end of the rotating rod (310) is assembled to the inner wall of the sealing rod sleeve (360).
2. A high-temperature purification crucible for producing high-purity semiconductor substrate powder materials according to claim 1, Characterized in that: The crucible cover body (200) includes a pot cover (210) and a hopper body (230). The hopper body (230) is vertically installed on the upper surface of the pot cover (210), and the opening and closing member (220) is installed at the connection between the hopper body (230) and the crucible body (100).
3. A high-temperature purification crucible for producing high-purity semiconductor substrate powder materials according to claim 2, Characterized in that: A hopper cover (250) is installed on the outer wall of the top of the hopper body (230).
4. A high-temperature purification crucible for producing high-purity semiconductor substrate powder materials according to claim 3, Characterized in that: The opening and closing member (220) includes a valve stem and a valve ball. The valve stem is arranged on one side of the valve ball, and the valve stem drives the valve ball to rotate along the plumb plane.
5. The high-temperature purification crucible for producing high-purity semiconductor substrate powder materials according to claim 4, characterized in that: A sealing flange (110) is provided on the outer edge of the top end of the crucible body (100), and a ventilation groove is provided between the sealing flange (110) and the inner side wall of the pot cover (210).
6. The high-temperature purification crucible for producing high-purity semiconductor substrate powder materials according to claim 5, characterized in that: The hopper body (230) is of a transparent structure, and a blanking scale (240) is provided on the side wall of the hopper body (230).
Citation Information
Patent Citations
High-temperature purification crucible for producing high-purity semiconductor base material powder material
CN218155480U