Method and device for measuring and calibrating the ionization degree of inductively coupled plasma

Abstract

The present invention relates to the technical field of ionization degree calculation, and in particular to a method and device for measuring and calibrating the ionization degree of inductively coupled plasma. The method comprises: obtaining the first nozzle air pressure and the first electron density distribution of the ICP generator to be calculated measured by a laser Thomson scattering measurement system; based on the verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution and the maximum electron density, calibrating the air pressure of the ICP generator to obtain the first real air pressure at the maximum electron density in the ICP generator; calculating the first ionization degree in the ICP generator based on the first electron density distribution and the first real air pressure; simulating the plasma reaction process of the ICP generator based on the simulation model and the first real air pressure to obtain the second ionization degree in the ICP generator; and verifying the first ionization degree using the second ionization degree. This scheme can accurately measure and calibrate the plasma ionization degree at various positions in the inductively coupled plasma generator.

Description

Technical Field

[0001] The embodiment of the present invention relates to the technical field of ionization degree calculation, and in particular to a method and device for measuring and calibrating the ionization degree of inductively coupled plasma. Background Art

[0002] When electromagnetic waves encounter the plasma sheath during propagation, they are absorbed and attenuated, and deflection, delay, phase shift and other effects occur. In severe cases, "black barriers" appear, which bring great difficulties to the measurement, control, communication and guidance of high-speed aircraft. The fundamental reason why plasma can be invisible to radar waves is that the electric field of microwave electromagnetic waves accelerates the movement of charged particles in plasma, causing collisions between charged particles and neutral particles, thereby transferring the energy of microwave electromagnetic waves. Therefore, in the application and research of inductively coupled plasma, it is very necessary to accurately calculate the ionization degree of inductively coupled plasma at various positions in the distribution space.

[0003] However, in the existing measurement and calibration method of the ionization degree of inductively coupled plasma, since the sensor for measuring the gas pressure in the cavity of the inductively coupled plasma generator can only be set at the nozzle of the inductively coupled plasma generator, it will lead to the inability to accurately measure the gas pressure in the plasma generator cavity, so that it is impossible to accurately calculate the ionization degree of the inductively coupled plasma at each position in the distribution space.

[0004] Therefore, there is an urgent need for an accurate measurement and calibration method for the ionization degree of inductively coupled plasma. Summary of the invention

[0005] In order to solve the problem that it is difficult for existing measurement and calibration methods to accurately calculate the ionization degree of inductively coupled plasma at various positions in the distribution space, an embodiment of the present invention provides a measurement and calibration method and device for the ionization degree of inductively coupled plasma.

[0006] In a first aspect, an embodiment of the present invention provides a method for measuring and calibrating the degree of ionization of an inductively coupled plasma, comprising:

[0007] Acquire a first pipe port air pressure and a first electron density distribution at an air inlet of an ICP generator to be calculated, measured by a laser Thomson scattering measurement system;

[0008] Based on a pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, the ICP generator is calibrated for air pressure to obtain a first real air pressure at the maximum electron density in the ICP generator;

[0009] Calculating a first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first real gas pressure;

[0010] Based on the simulation model and the first real gas pressure, simulating the plasma reaction process of the ICP generator to obtain a second degree of ionization at each position in the ICP generator;

[0011] The first degree of ionization is verified by using the second degree of ionization to determine a calibration result of the first degree of ionization.

[0012] Preferably, the air pressure calibration of the ICP generator based on the pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution and the maximum electron density in the first electron density distribution to obtain the first real air pressure at the maximum electron density in the ICP generator includes:

[0013] Taking the first pipe port air pressure as the maximum air pressure, a plurality of first preset simulation air pressures lower than the first pipe port air pressure are set according to first preset air pressure intervals;

[0014] Based on each first preset simulation gas pressure and a pre-verified simulation model of the ICP generator, the plasma reaction process of the ICP generator is simulated respectively to obtain a second electron density distribution at the maximum electron density under each first preset simulation gas pressure;

[0015] The second electron density distribution and the maximum electron density in the second electron density distribution corresponding to each first preset simulated gas pressure are compared with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator.

[0016] Preferably, comparing the second electron density distribution and the maximum electron density in the second electron density distribution corresponding to each first preset simulated gas pressure with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator, comprises:

[0017] For each first preset simulated air pressure, execute:

[0018] Compare the absolute value of the difference between the maximum electron density in the second electron density distribution corresponding to the current first preset simulation air pressure and the maximum electron density in the first electron density distribution with a first preset error;

[0019] If the absolute value of the difference of the maximum electron density is greater than the first preset error, then a comparison of the next first preset simulated air pressure is performed;

[0020] If the difference in the maximum electron density is less than the first preset error, the absolute values ​​of the differences between the electron density at each position except the electron density maximum value in the second electron density distribution corresponding to the current first preset simulation air pressure and the electron density at each corresponding position except the electron density maximum value in the first electron density distribution are compared with the second preset error respectively;

[0021] If the absolute value of the difference in electron density at each position except the maximum electron density is greater than the second preset error, a comparison with the next first preset simulated air pressure is performed; if it is less than the second preset error, the current first preset simulated air pressure is determined as the first real air pressure at the maximum electron density in the ICP generator; wherein the first preset error is less than the second preset error.

[0022] Preferably, the calculating the first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first real gas pressure comprises:

[0023] determining a plasma temperature in the ICP generator;

[0024] Determining a density of neutral particles in the ICP generator according to the first real gas pressure and the plasma temperature;

[0025] A first degree of ionization at each position in the ICP generator is determined based on the first electron density distribution and the density of the neutral particles.

[0026] Preferably, the density of the neutral particles is calculated by the following formula:

[0027] n g =p / kT

[0028] Where n g is the density of the neutral particles, p is the first real gas pressure, k is the Boltzmann constant, and T is the plasma temperature;

[0029] The first degree of ionization at each position in the ICP generator is calculated by the following formula:

[0030]

[0031] Where a is the first ionization degree at each position, n e is the plasma electron density at this position in the first electron density distribution, n g is the density of the neutral particles.

[0032] Preferably, the simulation model is verified by:

[0033] Acquire experimental result data of the ICP generator to be calculated under multiple preset parameters measured by a laser Thomson scattering measurement system; each of the experimental result data includes a second pipe port gas pressure at the air inlet of the ICP generator under the preset parameters, a third electron density distribution, and a first electron temperature at the maximum electron density;

[0034] Based on the pre-constructed initial model of the ICP generator, the second nozzle air pressure, the third electron density distribution and the maximum electron density in the third electron density distribution, the ICP generator under each preset parameter is calibrated for air pressure to obtain a second real air pressure at the maximum electron density of the ICP generator under each preset parameter;

[0035] Based on the initial model and the second real gas pressure, the plasma reaction process of the ICP generator under each preset parameter is simulated respectively to obtain a second electron temperature at the maximum electron density corresponding to each preset parameter;

[0036] Based on the first electron temperature and the second electron temperature corresponding to each preset parameter, a verification result of the initial model is determined until a simulation model that meets expectations is obtained.

[0037] Preferably, before determining the verification result of the initial model based on the first electron temperature and the second electron temperature corresponding to each preset parameter until a simulation model that meets expectations is obtained, it also includes: determining a fourth electron density distribution obtained by simulating the initial model under each preset parameter and the second real gas pressure corresponding to each preset parameter;

[0038] The step of determining a verification result of the initial model based on the first electron temperature and the second electron temperature corresponding to each preset parameter until a simulation model that meets expectations is obtained includes:

[0039] Determine a first result according to the first electron temperature and the second electron temperature corresponding to each preset parameter;

[0040] Determine a second result according to the maximum electron density in the third electron density distribution and the maximum electron density in the fourth electron density distribution corresponding to each preset parameter;

[0041] Determine a third result according to the third electron density distribution and the fourth electron density distribution corresponding to each preset parameter;

[0042] A verification result of the initial model is determined according to the first result, the second result and the third result, until a simulation model that meets expectations is obtained.

[0043] In a second aspect, an embodiment of the present invention further provides a device for measuring and calibrating the degree of ionization of an inductively coupled plasma, comprising:

[0044] A measuring unit, used for obtaining a first pipe port air pressure and a first electron density distribution at an air inlet of an ICP generator to be calculated, measured by a laser Thomson scattering measurement system;

[0045] a calibration unit, configured to perform air pressure calibration on the ICP generator based on a pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, so as to obtain a first real air pressure at the maximum electron density in the ICP generator;

[0046] a calculation unit, configured to calculate a first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first true gas pressure;

[0047] A simulation unit, configured to simulate a plasma reaction process of the ICP generator based on the simulation model and the first real gas pressure, and obtain a second degree of ionization at each position in the ICP generator;

[0048] The determination unit is used to verify the first ionization degree by using the second ionization degree to determine a calibration result of the first ionization degree.

[0049] In a third aspect, an embodiment of the present invention further provides a computing device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the method described in any embodiment of this specification is implemented.

[0050] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon, which, when executed in a computer, enables the computer to execute the method described in any embodiment of this specification.

[0051] The embodiment of the present invention provides a method and device for measuring and calibrating the ionization degree of an inductively coupled plasma. First, the first nozzle air pressure and the first electron density distribution of the ICP generator to be calculated measured by a laser Thomson scattering measurement system are obtained; then, based on the pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, the ICP generator is calibrated for air pressure to obtain the first real air pressure at the maximum electron density in the ICP generator; then, based on the first electron density distribution and the first real air pressure, the first ionization degree at each position in the ICP generator is calculated; finally, based on the simulation model and the first real air pressure, the plasma reaction process of the ICP generator is simulated to obtain the second ionization degree at each position in the ICP generator, so as to calibrate the first ionization degree at each position in the ICP generator and determine the calculation result of the ionization degree. Therefore, the scheme can accurately measure and calibrate the plasma ionization degree at each position in the inductively coupled plasma generator. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0053] Figure 1 It is a flow chart of a method for measuring and calibrating the degree of ionization of an inductively coupled plasma provided by one embodiment of the present invention;

[0054] Figure 2 is a hardware architecture diagram of an electronic device provided by an embodiment of the present invention;

[0055] Figure 3 It is a structural diagram of a device for measuring and calibrating the ionization degree of inductively coupled plasma provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0056] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0057] As mentioned above, in the existing inductively coupled plasma ionization degree measurement and calibration method, since the sensor for measuring the gas pressure in the cavity of the inductively coupled plasma generator can only be set at the nozzle of the inductively coupled plasma generator, it will lead to the inability to accurately measure the gas pressure in the plasma generator cavity, so that it is impossible to accurately calculate the ionization degree of the inductively coupled plasma at each position in the distribution space.

[0058] Therefore, in order to solve the above technical problems, the inventors consider using non-intrusive Thomson scattering measurement to achieve the purpose of accurately measuring the electron density distribution in the ICP generator without causing any interference to the plasma itself; then, by using the simulation results of the pre-verified simulation model under different first preset simulation pressures, and comparing them with the measurement results obtained by the Thomson scattering measurement, the first real gas pressure in the ICP generating device is determined, so as to accurately calculate the first ionization degree at various positions in the ICP generator based on the first electron density distribution and the first real gas pressure; and, the plasma reaction process of the ICP generator is simulated by using the simulation model and the first real gas pressure to obtain the second ionization degree at various positions in the ICP generator; and the calibration result of the ionization degree is determined according to the first ionization degree and the second ionization degree. Therefore, this solution can accurately measure and calibrate the plasma ionization degree at various positions in the inductively coupled plasma generator.

[0059] The specific implementation of the above concept is described below.

[0060] Please refer to Figure 1 The embodiment of the present invention provides a method for measuring and calibrating the ionization degree of an inductively coupled plasma, the method comprising:

[0061] Step 100: obtaining a first pipe port air pressure and a first electron density distribution at an air inlet of an ICP generator to be calculated measured by a laser Thomson scattering measurement system;

[0062] Step 102: Based on the pre-verified simulation model of the ICP generator, the first pipe port air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, the ICP generator is calibrated for air pressure to obtain a first real air pressure at the maximum electron density in the ICP generator;

[0063] Step 104: Calculating a first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first real gas pressure;

[0064] Step 106: simulating the plasma reaction process of the ICP generator based on the simulation model and the first real gas pressure to obtain a second degree of ionization at each position in the ICP generator;

[0065] Step 108: Verify the first degree of ionization using the second degree of ionization to determine a calibration result of the first degree of ionization.

[0066] In the embodiment of the present invention, the first nozzle pressure and the first electron density distribution of the ICP generator to be calculated measured by the laser Thomson scattering measurement system are first obtained; then, based on the pre-verified simulation model of the ICP generator, the first nozzle pressure, the first electron density distribution and the maximum electron density in the first electron density distribution, the ICP generator is calibrated for pressure to obtain the first real pressure at the maximum electron density in the ICP generator; then, based on the first electron density distribution and the first real pressure, the first ionization degree at each position in the ICP generator is calculated; finally, based on the simulation model and the first real pressure, the plasma reaction process of the ICP generator is simulated to obtain the second ionization degree at each position in the ICP generator, so as to verify the first ionization degree at each position in the ICP generator and determine the calculation result of the ionization degree. Therefore, the present scheme can accurately measure and calibrate the plasma ionization degree at each position in the inductively coupled plasma generator.

[0067] Described below Figure 1 How the various steps are performed.

[0068] For step 100:

[0069] The laser Thomson scattering measurement system includes a laser, a lens combination, a linear fiber bundle, a spectrometer (TGS), and a charge coupled camera (ICCD). The laser emitted by the laser is horizontally injected into the reaction chamber of the ICP generator, and a group of convex lens combinations are set in front of the optical fiber, which can focus the laser and plasma interaction area to the entrance of the optical fiber, where the optical fiber collection direction is at a 90-degree angle to the laser direction and the plasma beam axis. The Thomson scattering signal collected by the optical fiber is transmitted to the TGS system, passes through the grating, lens and other optical devices inside the TGS system, and is finally imaged (spectrified) on the ICCD camera. In order to avoid Rayleigh scattering from the air and reflections from the surfaces of other objects, the collection end of the optical fiber and the collection lens are placed in a dark room, so that the first pipe mouth air pressure and the first electron density distribution at the air inlet of the ICP generator to be calculated can be obtained by measuring the scattered cross-sectional area of ​​the electrons.

[0070] It should be noted that in the embodiments of the present invention, whether the measurement is performed using a laser Thomson scattering measurement system or the reaction process is simulated using a simulation model, the obtained electron density distribution and electron temperature are measured after the plasma reaction reaches a stable state.

[0071] Regarding step 102:

[0072] In this embodiment, in order to accurately calibrate the first real air pressure, it is necessary to use a pre-verified simulation model of the ICP generator to perform air pressure calibration on the ICP generator.

[0073] Next, the verification method of the simulation model of the ICP generator is described in detail.

[0074] In some embodiments, the simulation model is validated by:

[0075] Step 200, obtaining experimental result data of the ICP generator to be calculated under multiple preset parameters measured by a laser Thomson scattering measurement system; each experimental result data includes a second pipe port pressure at the air inlet of the ICP generator under the preset parameters, a third electron density distribution, and a first electron temperature at the maximum electron density;

[0076] Step 202, based on the pre-constructed initial model of the ICP generator, the second nozzle air pressure, the third electron density distribution and the maximum electron density in the third electron density distribution, the air pressure of the ICP generator under each preset parameter is calibrated to obtain the second real air pressure at the maximum electron density of the ICP generator under each preset parameter;

[0077] Step 204, based on the initial model and the second real gas pressure, respectively simulate the plasma reaction process of the ICP generator under each preset parameter to obtain a second electron temperature at the maximum electron density corresponding to each preset parameter;

[0078] Step 206 , based on the first electron temperature and the second electron temperature corresponding to each preset parameter, determine the verification result of the initial model until a simulation model that meets expectations is obtained.

[0079] For step 200:

[0080] In order to fully verify the accuracy of the initial model under different setting parameters, it is necessary to set multiple preset parameters, mainly including setting different absorption powers for the ICP generator. It is understandable that other parameters such as temperature and type of plasma gas need to be consistent with the first nozzle pressure and the first electron density distribution of the ICP generator to be calculated measured in step 100. For subsequent pressure calibration and simulation, it is necessary to measure the second nozzle pressure of the ICP generator under each preset parameter.

[0081] The laser Thomson scattering measurement system is used to measure the third electron density distribution and the first electron temperature of the plasma after the ICP generator reaction is stabilized under each preset parameter.

[0082] For step 202:

[0083] In some implementations, step 202 may include:

[0084] For each ICP generator under preset parameters, execute:

[0085] The second pipe port air pressure corresponding to the current preset parameters is used as the maximum air pressure, and a plurality of second preset simulation air pressures lower than the second pipe port air pressure are set according to the second preset air pressure intervals;

[0086] Based on each second preset simulation gas pressure and the pre-built initial model of the ICP generator, the plasma reaction process of the ICP generator under the current preset parameters is simulated respectively to obtain a fifth electron density distribution under each second preset simulation gas pressure;

[0087] The fifth electron density distribution and the maximum electron density in the fifth electron density distribution corresponding to each second preset simulation air pressure are compared with the third electron density distribution and the maximum electron density in the third electron density distribution, respectively, to determine the second real air pressure of the ICP generator at the maximum electron density under the current preset parameters.

[0088] In the embodiment, it is necessary to pre-model the finite element calculation model of the ICP generator, which mainly includes two-dimensional simulation modeling of the axisymmetric tubular structure of the reaction chamber of the ICP generator, and the main parameters are the length, inner diameter, wall thickness of the tubular structure, the number of coil turns in the tube, the coil wire diameter, the turn spacing, the thickness of the air layer outside the tube, etc. In addition, for the plasma gas used in the ICP generator, it is necessary to set the reaction coefficient of the electrochemical reaction of the plasma gas and the reaction coefficient of the surface reaction at the contact between the wall and the tube. In addition, the materials of each part in the model are set, the wall and the tube are layered, and the meshing of the entire initial model is performed.

[0089] Since the vacuum gauge for measuring the air pressure at the second pipe port is placed at the air inlet end of the ICP generator, the air pressure at the second pipe port is often higher than the second real air pressure in the cavity. Therefore, it is necessary to take the air pressure at the second pipe port corresponding to the current preset parameters as the maximum air pressure, and set several second preset simulation air pressures lower than the air pressure at the second pipe port according to the second preset air pressure interval.

[0090] In order to determine the second real gas pressure more quickly, the gas pressure value of the initial model can be set in order from large to small according to the second preset simulation gas pressure, so that the plasma reaction process of the ICP generator under the current preset parameters can be simulated respectively using the initial model, and the fifth electron density distribution corresponding to each second preset simulation gas pressure under the current preset parameters can be obtained; by comparing the fifth electron density distribution corresponding to each second preset simulation gas pressure and the maximum electron density in the fifth electron density distribution with the third electron density distribution measured in step 200 and the maximum electron density in the third electron density distribution, respectively, to determine the second real gas pressure of the ICP generator at the maximum electron density under the current preset parameters.

[0091] In some implementations, step 202 may include:

[0092] For each second preset simulated air pressure, execute:

[0093] Compare the absolute value of the difference between the maximum electron density in the fifth electron density distribution corresponding to the current second preset simulation gas pressure and the maximum electron density in the third electron density distribution with the third preset error;

[0094] If the absolute value of the difference of the maximum electron density is greater than the third preset error, then a comparison with the next second preset simulated air pressure is performed;

[0095] If the difference in the maximum electron density is less than the third preset error, the absolute values ​​of the differences between the electron density at each position except the electron density maximum value in the fifth electron density distribution corresponding to the current second preset simulation gas pressure and the electron density at each corresponding position except the electron density maximum value in the third electron density distribution are compared with the fourth preset error respectively;

[0096] If the absolute value of the difference in electron density at each position except the maximum electron density is greater than the fourth preset error, the next second preset simulation air pressure is compared; if it is less than the fourth preset error, the current second preset simulation air pressure is determined as the second real air pressure at the maximum electron density of the ICP generator under the current second preset parameters; wherein the third preset error is less than the fourth preset error.

[0097] In this embodiment, since it is necessary to calibrate the second real air pressure at the maximum electron density, the first comparison is between the maximum electron density in the fifth electron density distribution corresponding to each second preset simulation air pressure and the maximum electron density in the third electron density distribution measured in step 200. When the maximum electron density is consistent, the fifth electron density distribution is compared with the third electron density distribution measured in step 200. When both the maximum electron density and the electron density distribution meet the requirements, the corresponding second preset simulation air pressure is determined as the second real air pressure at the maximum electron density of the ICP generator under the current preset parameters, so as to ensure the accuracy of the second real air pressure.

[0098] In this embodiment, the comparison of the maximum electron density is more important than the comparison of the electron density at each position in the electron density distribution except the maximum electron density, so the third preset error is smaller than the fourth preset error.

[0099] It should be noted that if the maximum electron density and the electron density distribution corresponding to each second preset simulation pressure cannot meet the requirements at the same time, the second preset simulation pressure can be reset for simulation by reducing the second preset pressure interval. If it still cannot meet the requirements at the same time, it means that the constructed initial model is inaccurate and the initial model needs to be adjusted until it meets the requirements and the second real pressure is determined.

[0100] Regarding step 204:

[0101] In some implementations, step 204 may include:

[0102] Based on the initial model and the second real gas pressure, the plasma reaction process of the ICP generator under each preset parameter is simulated respectively to obtain the position of the maximum electron density of the ICP generator under each preset parameter;

[0103] The electron temperature at the maximum electron density position corresponding to each preset parameter is determined as the second electron temperature corresponding to the preset parameter.

[0104] In this embodiment, the plasma reaction process of the ICP generator under each preset parameter is simulated respectively by using the simulation model and the second real gas pressure to obtain the second electron temperature under the second real gas pressure corresponding to each preset parameter.

[0105] In addition, since the gradient distribution of the electron temperature is not obvious enough, it is difficult to determine in the initial model which position's electron temperature is the electron temperature at the center of the coil in the ICP generator. According to the close correlation between electron density and electron temperature, this embodiment can determine the electron temperature at the position of the maximum electron density corresponding to each preset parameter as the second electron temperature corresponding to the preset parameter by determining the position of the maximum electron density, thereby improving the speed and accuracy of determining the second electron temperature, and further more accurately verifying the effectiveness of the initial model.

[0106] For step 206:

[0107] In some embodiments, before step 206, the method may further include: determining a fourth electron density distribution obtained by simulating the initial model under each preset parameter and the second real gas pressure corresponding to each preset parameter;

[0108] Then, in some implementations, step 206 may include:

[0109] Determine a first result according to a first electron temperature and a second electron temperature corresponding to each preset parameter;

[0110] Determine a second result according to the maximum electron density in the third electron density distribution and the maximum electron density in the fourth electron density distribution corresponding to each preset parameter;

[0111] Determine a third result according to the third electron density distribution and the fourth electron density distribution corresponding to each preset parameter;

[0112] The verification result of the initial model is determined according to the first result, the second result and the third result, until a simulation model that meets expectations is obtained.

[0113] In this embodiment, in order to accurately verify the validity of the initial model, the two physical quantities of electron density distribution and electron temperature can be used to verify the initial model at the same time, that is, the reliability of the initial model can be fully guaranteed by judging whether the second electron temperature, the fourth electron density distribution and the maximum electron density in the fourth electron density distribution obtained by simulation are consistent with the first electron temperature, the third electron density distribution and the maximum electron density in the third electron density distribution measured by the laser Thomson scattering measurement system in step 200, until a simulation model that meets expectations is obtained.

[0114] It should be noted that when the electron temperature and electron density distribution cannot meet the requirements at the same time, it means that the initial model is not accurate enough and the initial model needs to be adjusted until a simulation model that meets expectations is obtained.

[0115] In some embodiments, the first result is a comparison result of the difference between the first electron temperature and the second electron temperature under each preset parameter and the preset temperature difference; the second result is a comparison result of the difference between the maximum electron density in the third electron density distribution and the maximum electron density in the fourth electron density distribution under each preset parameter and the first preset density difference; the third result is a comparison result of the difference between the electron density at each position other than the maximum electron density in the third electron density distribution and the electron density at each corresponding position other than the maximum electron density in the fourth electron density distribution under each preset parameter and the second preset density difference; wherein the first preset density difference is smaller than the second preset density difference.

[0116] In summary, through steps 200 to 206, a simulation model of the ICP generator that meets expectations can be obtained through verification.

[0117] Next, after obtaining the verified simulation model of the ICP generator, the simulation model can be used to perform air pressure calibration on the ICP generator to be calculated.

[0118] In some implementations, step 102 may include:

[0119] Taking the air pressure at the first pipe port as the maximum air pressure, a plurality of first preset simulation air pressures lower than the air pressure at the first pipe port are set according to the first preset air pressure intervals;

[0120] Based on each first preset simulation gas pressure and a pre-verified simulation model of the ICP generator, the plasma reaction process of the ICP generator is simulated respectively to obtain a second electron density distribution under each first preset simulation gas pressure;

[0121] The second electron density distribution corresponding to each first preset simulated gas pressure and the maximum electron density in the second electron density distribution are compared with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator.

[0122] In this embodiment, since the vacuum gauge for measuring the first pipe port air pressure is placed at the air inlet end of the ICP generator, the first pipe port air pressure is higher than the first real air pressure in the cavity. Therefore, it is necessary to take the first pipe port air pressure as the maximum air pressure and set several first preset simulation air pressures lower than the first pipe port air pressure according to the first preset air pressure interval.

[0123] In order to determine the second real gas pressure more quickly, the gas pressure value of the simulation model verified by steps 200-206 can be set in sequence according to the order of the arithmetic progression or geometric progression of the first preset simulation gas pressure from large to small, so as to use the simulation model to simulate the plasma reaction process of the ICP generator under the current preset parameters respectively, and the second electron density distribution corresponding to each first preset simulation gas pressure can be obtained; by comparing the second electron density distribution corresponding to each first preset simulation gas pressure and the maximum electron density in the second electron density distribution with the first electron density distribution and the maximum electron density in the first electron density distribution measured in step 100, respectively, to determine the first real gas pressure at the maximum electron density of the ICP generator to be calculated. In this embodiment, based on the simulation model verified by steps 200-206, the gas pressure calibration of the ICP generator to be calculated can ensure the accuracy of the first real gas pressure at the maximum electron density of the ICP generator to be calculated, and further improve the calculation accuracy of the ionization degree of the inductively coupled plasma.

[0124] In some embodiments, the step of “comparing the second electron density distribution corresponding to each first preset simulated gas pressure and the maximum electron density in the second electron density distribution with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator” may include:

[0125] For each first preset simulated air pressure, execute:

[0126] Compare the absolute value of the difference between the maximum electron density in the second electron density distribution corresponding to the current first preset simulation air pressure and the maximum electron density in the first electron density distribution with a first preset error;

[0127] If the absolute value of the difference of the maximum electron density is greater than the first preset error, then a comparison of the next first preset simulated air pressure is performed;

[0128] If the difference in the maximum electron density is less than the first preset error, the absolute values ​​of the differences between the electron density at each position other than the maximum electron density in the second electron density distribution corresponding to the current first preset simulation air pressure and the electron density at each corresponding position other than the maximum electron density in the first electron density distribution are compared with the second preset error respectively;

[0129] If the absolute value of the difference in electron density at each position except the maximum electron density is greater than the second preset error, the next comparison with the first preset simulation air pressure is performed; if it is less than the second preset error, the current first preset simulation air pressure is determined as the first real air pressure at the maximum electron density in the ICP generator; wherein the first preset error is less than the second preset error.

[0130] In the present embodiment, since it is necessary to calibrate the first real air pressure at the maximum electron density, the first comparison is between the maximum electron density in the second electron density distribution corresponding to each first preset simulated air pressure and the maximum electron density of the first electron density distribution measured in step 100. When the maximum electron density is particularly consistent, the second electron density distribution is compared with the first electron density distribution measured in step 100. When both the maximum electron density and the electron density distribution meet the requirements, the corresponding first preset simulated air pressure is determined as the first real air pressure at the maximum electron density of the ICP generator under the current preset parameters, so as to ensure the accuracy of the first real air pressure. In the present embodiment, the comparison of the maximum electron density is more important than the comparison of the electron density at each position in the electron density distribution except the maximum electron density. Therefore, the first preset error is less than the second preset error to ensure the accuracy of the first real air pressure.

[0131] It should be noted that if the maximum electron density and the electron density distribution corresponding to each first preset simulation air pressure cannot meet the requirements at the same time, the first preset simulation air pressure can be reset for simulation by reducing the first preset air pressure interval. If it still cannot meet the requirements at the same time, it means that the constructed simulation model is inaccurate and the simulation model needs to be adjusted until it meets the requirements and the first real air pressure is determined.

[0132] Regarding step 104:

[0133] In some implementations, step 104 may include:

[0134] Determining the plasma temperature in the ICP generator;

[0135] Determining the density of neutral particles in the ICP generator according to the first real gas pressure and the plasma temperature;

[0136] A first degree of ionization at each position in the ICP generator is determined based on the first electron density distribution and the density of neutral particles.

[0137] In this embodiment, since the ICP generator itself is equipped with a water cooling system and a fan cooling device, the heat generated by the discharge can be promptly removed to ensure that the plasma temperature is the same as the ambient temperature. Therefore, the ambient temperature around the ICP generator can be measured by a thermometer as the plasma temperature in the ICP generator.

[0138] In the embodiment of the present invention, the density of neutral particles is calculated by the following formula:

[0139] n g =p / kT

[0140] Where n g is the density of neutral particles, p is the first real gas pressure, k is the Boltzmann constant, and T is the plasma temperature.

[0141] The first degree of ionization at each position in the ICP generator is calculated by the following formula:

[0142]

[0143] Where a is the first ionization degree at each position, n e is the plasma electron density at this position in the first electron density distribution, n g is the density of neutral particles.

[0144] Therefore, in this embodiment, by utilizing the first electron density distribution measured by the laser Thomson scattering measurement system in step 100 and the first real gas pressure at the maximum electron density in the ICP generator determined after calibration in step 102, the first degree of ionization at each position in the ICP generator can be calculated more accurately.

[0145] For steps 106 and 108:

[0146] After the first ionization degree is calculated in step 104, in order to verify the accuracy of the first ionization degree, the plasma reaction process of the ICP generator to be calculated can be simulated based on the simulation model obtained by the verification method of steps 200-208 and the first real gas pressure obtained in step 102, and the second ionization degree at each position in the ICP generator can be obtained. Then, the first ionization degree calculated in step 104 is verified according to the second ionization degree obtained by simulation to determine the measurement calculation result of the ionization degree of the ICP generator to be calculated. Therefore, the embodiment of the present invention can accurately measure and calibrate the plasma ionization degree at each position in the inductively coupled plasma generator.

[0147] like Figure 2 , Figure 3 As shown, an embodiment of the present invention provides a device for measuring and calibrating the degree of ionization of an inductively coupled plasma. The device embodiment can be implemented by software, or by hardware or a combination of software and hardware. From the hardware level, Figure 2 FIG. 1 is a hardware architecture diagram of a computing device where an inductively coupled plasma ionization degree measurement and calibration device provided in an embodiment of the present invention is located, except that Figure 2In addition to the processor, memory, network interface, and non-volatile memory shown in the figure, the computing device in which the device is located in the embodiment may also generally include other hardware, such as a forwarding chip responsible for processing messages, etc. Taking software implementation as an example, Figure 3 As shown, as a device in a logical sense, the CPU of the computing device in which it is located reads the corresponding computer program in the non-volatile memory into the internal memory and runs it.

[0148] like Figure 3 As shown, this embodiment provides a device for measuring and calibrating the ionization degree of an inductively coupled plasma, comprising:

[0149] The measuring unit 301 is used to obtain a first pipe port air pressure and a first electron density distribution at an air inlet of an ICP generator to be calculated measured by a laser Thomson scattering measurement system;

[0150] The calibration unit 302 is used to perform pressure calibration on the ICP generator based on a pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, so as to obtain a first real air pressure at the maximum electron density in the ICP generator;

[0151] A calculation unit 303 is used to calculate a first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first real gas pressure;

[0152] The simulation unit 304 is used to simulate the plasma reaction process of the ICP generator based on the simulation model and the first real gas pressure to obtain a second ionization degree at each position in the ICP generator;

[0153] The determination unit 305 is used to verify the first ionization degree by using the second ionization degree to determine a calibration result of the first ionization degree.

[0154] In one embodiment of the present invention, the calibration unit 302 is configured to perform:

[0155] Taking the air pressure at the first pipe port as the maximum air pressure, a plurality of first preset simulation air pressures lower than the air pressure at the first pipe port are set according to the first preset air pressure intervals;

[0156] Based on each first preset simulation gas pressure and a pre-verified simulation model of the ICP generator, the plasma reaction process of the ICP generator is simulated respectively to obtain a second electron density distribution at the maximum electron density under each first preset simulation gas pressure;

[0157] The second electron density distribution corresponding to each first preset simulated gas pressure and the maximum electron density in the second electron density distribution are compared with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator.

[0158] In one embodiment of the present invention, the calibration unit 302, when comparing the second electron density distribution corresponding to each first preset simulated gas pressure and the maximum electron density in the second electron density distribution with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator, is specifically used to:

[0159] For each first preset simulated air pressure, execute:

[0160] Compare the absolute value of the difference between the maximum electron density in the second electron density distribution corresponding to the current first preset simulation air pressure and the maximum electron density in the first electron density distribution with a first preset error;

[0161] If the absolute value of the difference of the maximum electron density is greater than the first preset error, then a comparison of the next first preset simulated air pressure is performed;

[0162] If the difference in the maximum electron density is less than the first preset error, the absolute values ​​of the differences between the electron density at each position other than the maximum electron density in the second electron density distribution corresponding to the current first preset simulation air pressure and the electron density at each corresponding position other than the maximum electron density in the first electron density distribution are compared with the second preset error respectively;

[0163] If the absolute value of the difference in electron density at each position except the maximum electron density is greater than the second preset error, the next comparison with the first preset simulation air pressure is performed; if it is less than the second preset error, the current first preset simulation air pressure is determined as the first real air pressure at the maximum electron density in the ICP generator; wherein the first preset error is less than the second preset error.

[0164] In one embodiment of the present invention, the computing unit 303 is configured to execute:

[0165] Determining the plasma temperature in the ICP generator;

[0166] Determining the density of neutral particles in the ICP generator according to the first real gas pressure and the plasma temperature;

[0167] A first degree of ionization at each position in the ICP generator is determined based on the first electron density distribution and the density of neutral particles.

[0168] In one embodiment of the present invention, in the calculation unit 303, the density of the neutral particles is calculated by the following formula:

[0169] n g =p / kT

[0170] Where n g is the density of neutral particles, p is the first real gas pressure, k is the Boltzmann constant, and T is the plasma temperature;

[0171] The first degree of ionization at each position in the ICP generator is calculated by the following formula:

[0172]

[0173] Where a is the first ionization degree at each position, n e is the plasma electron density at this position in the first electron density distribution, n g is the density of neutral particles.

[0174] In one embodiment of the present invention, a model verification unit 306 is further included, in which the simulation model is verified in the following manner:

[0175] Acquire experimental result data of the ICP generator to be calculated under multiple preset parameters measured by a laser Thomson scattering measurement system; each experimental result data includes a second pipe port pressure at the air inlet of the ICP generator under the preset parameters, a third electron density distribution, and a first electron temperature at the maximum electron density;

[0176] Based on the pre-constructed initial model of the ICP generator, the second nozzle air pressure, the third electron density distribution and the maximum electron density in the third electron density distribution, the ICP generator under each preset parameter is calibrated for air pressure to obtain the second real air pressure at the maximum electron density of the ICP generator under each preset parameter;

[0177] Based on the initial model and the second real gas pressure, the plasma reaction process of the ICP generator under each preset parameter is simulated respectively to obtain the second electron temperature at the maximum electron density corresponding to each preset parameter;

[0178] Based on the first electron temperature and the second electron temperature corresponding to each preset parameter, a verification result of the initial model is determined until a simulation model that meets expectations is obtained.

[0179] In one embodiment of the present invention, the model verification unit 306, before determining the verification result of the initial model based on the first electron temperature and the second electron temperature corresponding to each preset parameter until the simulation model that meets the expectations is obtained, is further used to determine the fourth electron density distribution obtained by simulating the initial model under each preset parameter and the second real gas pressure corresponding to each preset parameter;

[0180] In one embodiment of the present invention, the model verification unit 306, when determining the verification result of the initial model based on the first electron temperature and the second electron temperature corresponding to each preset parameter until a simulation model meeting expectations is obtained, is further configured to execute:

[0181] Determine a first result according to a first electron temperature and a second electron temperature corresponding to each preset parameter;

[0182] Determine a second result according to the maximum electron density in the third electron density distribution and the maximum electron density in the fourth electron density distribution corresponding to each preset parameter;

[0183] Determine a third result according to the third electron density distribution and the fourth electron density distribution corresponding to each preset parameter;

[0184] The verification result of the initial model is determined according to the first result, the second result and the third result, until a simulation model that meets expectations is obtained.

[0185] It is to be understood that the structure illustrated in the embodiment of the present invention does not constitute a specific limitation on a device for measuring and calibrating the degree of ionization of an inductively coupled plasma. In other embodiments of the present invention, a device for measuring and calibrating the degree of ionization of an inductively coupled plasma may include more or fewer components than those shown in the figure, or combine certain components, or separate certain components, or arrange the components differently. The components shown in the figure may be implemented in hardware, software, or a combination of software and hardware.

[0186] The information interaction, execution process and other contents between the modules in the above-mentioned device are based on the same concept as the embodiment of the method of the present invention. For the specific contents, please refer to the description in the embodiment of the method of the present invention, and no further description is given here.

[0187] An embodiment of the present invention further provides a computing device, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, a method for measuring and calibrating the ionization degree of an inductively coupled plasma in any embodiment of the present invention is implemented.

[0188] An embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the processor executes a method for measuring and calibrating the ionization degree of an inductively coupled plasma in any embodiment of the present invention.

[0189] Specifically, a system or device equipped with a storage medium can be provided, on which software program code that implements the functions of any of the above-mentioned embodiments is stored, and a computer (or CPU or MPU) of the system or device can be enabled to read and execute the program code stored in the storage medium.

[0190] In this case, the program code itself read from the storage medium can realize the function of any one of the above-mentioned embodiments, and thus the program code and the storage medium storing the program code constitute a part of the present invention.

[0191] The storage medium embodiments for providing the program code include a floppy disk, a hard disk, a magneto-optical disk, an optical disk (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), a magnetic tape, a non-volatile memory card, and a ROM. Alternatively, the program code can be downloaded from a server computer by a communication network.

[0192] In addition, it should be clear that the functions of any of the above embodiments can be implemented not only by executing the program code read by the computer, but also by enabling an operating system operating on the computer to complete part or all of the actual operations based on instructions from the program code.

[0193] In addition, it can be understood that the program code read from the storage medium is written to a memory provided in an expansion board inserted into the computer or to a memory provided in an expansion module connected to the computer, and then based on the instructions of the program code, a CPU installed on the expansion board or expansion module is enabled to perform part or all of the actual operations, thereby realizing the functions of any of the above-mentioned embodiments.

[0194] It should be noted that, in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprise a ..." do not exclude the presence of other identical factors in the process, method, article or device including the elements.

[0195] A person of ordinary skill in the art can understand that all or part of the steps of implementing the above method embodiments can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above method embodiments; and the aforementioned storage medium includes: ROM, RAM, magnetic disk or optical disk, etc., various media that can store program codes.

[0196] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for measuring and calibrating the degree of ionization of an inductively coupled plasma, characterized in that: include: Acquire a first pipe port air pressure and a first electron density distribution at an air inlet of an ICP generator to be calculated, measured by a laser Thomson scattering measurement system; Based on a pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, the ICP generator is calibrated for air pressure to obtain a first real air pressure at the maximum electron density in the ICP generator; Calculating a first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first real gas pressure; Based on the simulation model and the first real gas pressure, simulating the plasma reaction process of the ICP generator to obtain a second degree of ionization at each position in the ICP generator; The first degree of ionization is verified by using the second degree of ionization to determine a calibration result of the first degree of ionization.

2. The method according to claim 1, characterized in that The method of calibrating the ICP generator based on the pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution to obtain a first real air pressure at the maximum electron density in the ICP generator includes: Taking the first pipe port air pressure as the maximum air pressure, a plurality of first preset simulation air pressures lower than the first pipe port air pressure are set according to first preset air pressure intervals; Based on each first preset simulation gas pressure and a pre-verified simulation model of the ICP generator, the plasma reaction process of the ICP generator is simulated respectively to obtain a second electron density distribution at the maximum electron density under each first preset simulation gas pressure; The second electron density distribution and the maximum electron density in the second electron density distribution corresponding to each first preset simulated gas pressure are compared with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine the first real gas pressure at the maximum electron density in the ICP generator.

3. The method according to claim 2, characterized in that The step of comparing the second electron density distribution and the maximum electron density in the second electron density distribution corresponding to each first preset simulated gas pressure with the first electron density distribution and the maximum electron density in the first electron density distribution, respectively, to determine a first real gas pressure at the maximum electron density in the ICP generator, comprising: For each first preset simulated air pressure, execute: Compare the absolute value of the difference between the maximum electron density in the second electron density distribution corresponding to the current first preset simulation air pressure and the maximum electron density in the first electron density distribution with a first preset error; If the absolute value of the difference of the maximum electron density is greater than the first preset error, then a comparison of the next first preset simulated air pressure is performed; If the difference in the maximum electron density is less than the first preset error, the absolute values ​​of the differences between the electron density at each position except the electron density maximum value in the second electron density distribution corresponding to the current first preset simulation air pressure and the electron density at each corresponding position except the electron density maximum value in the first electron density distribution are compared with the second preset error respectively; If the absolute value of the difference in electron density at each position except the maximum electron density is greater than the second preset error, a comparison with the next first preset simulated air pressure is performed; if it is less than the second preset error, the current first preset simulated air pressure is determined as the first real air pressure at the maximum electron density in the ICP generator; wherein the first preset error is less than the second preset error.

4. The method according to claim 1, characterized in that The step of calculating the first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first real gas pressure comprises: determining a plasma temperature in the ICP generator; Determining a density of neutral particles in the ICP generator according to the first real gas pressure and the plasma temperature; A first degree of ionization at each position in the ICP generator is determined based on the first electron density distribution and the density of the neutral particles.

5. The method according to claim 4, characterized in that The density of the neutral particles is calculated by the following formula: n g =p / kT Where n g is the density of the neutral particles, p is the first real gas pressure, k is the Boltzmann constant, and T is the plasma temperature; The first degree of ionization at each position in the ICP generator is calculated by the following formula: Where a is the first ionization degree at each position, n e is the plasma electron density at this position in the first electron density distribution, n g is the density of the neutral particles.

6. The method according to claim 1, characterized in that The simulation model was verified by: Acquire experimental result data of the ICP generator to be calculated under multiple preset parameters measured by a laser Thomson scattering measurement system; each of the experimental result data includes a second pipe port gas pressure at the air inlet of the ICP generator under the preset parameters, a third electron density distribution, and a first electron temperature at the maximum electron density; Based on the pre-constructed initial model of the ICP generator, the second nozzle air pressure, the third electron density distribution and the maximum electron density in the third electron density distribution, the ICP generator under each preset parameter is calibrated for air pressure to obtain a second real air pressure at the maximum electron density of the ICP generator under each preset parameter; Based on the initial model and the second real gas pressure, the plasma reaction process of the ICP generator under each preset parameter is simulated respectively to obtain a second electron temperature at the maximum electron density corresponding to each preset parameter; Based on the first electron temperature and the second electron temperature corresponding to each preset parameter, a verification result of the initial model is determined until a simulation model that meets expectations is obtained.

7. The method according to claim 6, characterized in that Before determining the verification result of the initial model based on the first electron temperature and the second electron temperature corresponding to each preset parameter until a simulation model that meets expectations is obtained, the method further includes: determining a fourth electron density distribution obtained by simulating the initial model under each preset parameter and the second real gas pressure corresponding to each preset parameter; The step of determining a verification result of the initial model based on the first electron temperature and the second electron temperature corresponding to each preset parameter until a simulation model that meets expectations is obtained includes: Determine a first result according to the first electron temperature and the second electron temperature corresponding to each preset parameter; Determine a second result according to the maximum electron density in the third electron density distribution and the maximum electron density in the fourth electron density distribution corresponding to each preset parameter; Determine a third result according to the third electron density distribution and the fourth electron density distribution corresponding to each preset parameter; A verification result of the initial model is determined according to the first result, the second result and the third result, until a simulation model that meets expectations is obtained.

8. A device for measuring and calibrating the degree of ionization of an inductively coupled plasma, characterized in that: include: A measuring unit, used for obtaining a first pipe port air pressure and a first electron density distribution at an air inlet of an ICP generator to be calculated, measured by a laser Thomson scattering measurement system; a calibration unit, configured to perform air pressure calibration on the ICP generator based on a pre-verified simulation model of the ICP generator, the first nozzle air pressure, the first electron density distribution, and the maximum electron density in the first electron density distribution, so as to obtain a first real air pressure at the maximum electron density in the ICP generator; a calculation unit, configured to calculate a first degree of ionization at each position in the ICP generator based on the first electron density distribution and the first true gas pressure; A simulation unit, configured to simulate a plasma reaction process of the ICP generator based on the simulation model and the first real gas pressure, and obtain a second degree of ionization at each position in the ICP generator; The determination unit is used to verify the first ionization degree by using the second ionization degree to determine a calibration result of the first ionization degree.

9. A computing device, comprising a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the method according to any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, which, when executed in a computer, causes the computer to execute the method according to any one of claims 1 to 7.

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