Antenna device

Abstract

Some embodiments of the present application provide an electronic modulation device. The electronic modulation device includes a first transistor; a first modulation electrode electrically connected to the first transistor and having a first long axis arranged along a first longitudinal direction. The electronic modulation device also includes a second transistor; a second modulation electrode electrically connected to the second transistor and having a second long axis arranged along a second longitudinal direction. The second longitudinal direction is different from the first longitudinal direction.

Description

[0001] This invention is a divisional application of the invention with application number 201910949752.5, application date October 8, 2019, and invention name “Electronic Modulation Device”. Technical Field

[0002] The present application relates to an electronic modulation device, and more particularly to an electronic modulation device having modulation electrodes with different arrangements. Background Art

[0003] Electronic devices containing display panels, such as smartphones, tablets, laptops, monitors, and televisions, have become indispensable in modern society. With the rapid growth of these portable electronic devices, consumers have high expectations for their quality, functionality, and price. These electronic devices often include communication capabilities. However, this communication capability still has room for improvement. Summary of the Invention

[0004] Some embodiments of the present application provide an electronic modulation device. The electronic modulation device includes a first modulation unit, the first modulation unit includes a first transistor, the first transistor includes a channel region arranged along an extension direction; the first modulation unit also includes a first modulation electrode, which is electrically connected to the first transistor and arranged along a first length direction. The electronic modulation device also includes a second modulation unit. The second modulation unit includes a second transistor, the second transistor includes a channel region arranged along the extension direction. The second modulation unit also includes a second modulation electrode, which is electrically connected to the second transistor and arranged along a second length direction. The second length direction is different from the first length direction. The first angle between the extension direction and the first length direction is different from the second angle between the extension direction and the second length direction.

[0005] Other embodiments of the present application provide an electronic modulation device. The electronic modulation device includes a first modulation unit. The first modulation unit includes a first transistor and a first modulation electrode. The first transistor includes a channel region. The first modulation electrode is electrically connected to the first transistor. The electronic modulation device also includes a second modulation unit. The second modulation unit includes a second transistor and a second modulation electrode. The second transistor includes a channel region. The second modulation electrode is electrically connected to the second transistor. The distance between the channel region of the first transistor and the first modulation electrode is different from the distance between the channel region of the second transistor and the second modulation electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, in which:

[0007] Figure 1is a top view of an electronic modulation device according to some embodiments of the present application;

[0008] Figure 2A 、 Figure 2B is a top view illustrating a modulation unit of an electronic modulation device according to some embodiments of the present application;

[0009] Figure 3A 、 Figure 3B 1 is an example illustrating an extension direction of a channel region defined by an electronic modulation device according to some embodiments of the present application;

[0010] Figure 4A 、 Figure 4B 1 is an example illustrating an extension direction of a channel region defined by an electronic modulation device according to some embodiments of the present application;

[0011] Figure 5A 、 Figure 5B 1 is an example illustrating the length direction of a modulation electrode defined by an electronic modulation device according to some embodiments of the present application;

[0012] Figure 6 is an enlarged top view of a modulation unit of an electronic modulation device according to some embodiments of the present application;

[0013] Figure 7A 、 Figure 7B 1 is an example of a modulation electrode of an electronic modulation device according to some embodiments of the present application;

[0014] Figure 8 is a cross-sectional view of an electronic modulation device according to some embodiments of the present application;

[0015] Figure 9 is a cross-sectional view of an electronic modulation device according to some embodiments of the present application;

[0016] Figure 10 is a top view of an electronic modulation device according to some embodiments of the present application;

[0017] Figures 11A-11D is a top view of an electronic modulation device according to some embodiments of the present application;

[0018] Description of component numbers in the figure:

[0019] 100 Electronic modulation device

[0020] 102 data cable

[0021] 104 scan lines

[0022] 106A, 106B, 106C, 106D, 106G modulation units

[0023] 108A, 108B, 108C, 108D, 108G transistors

[0024] 110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H, 110I modulation electrodes

[0025] 112A, 112B, 112C, 112D source electrodes

[0026] 114A, 114B, 114C, 114D, 114G drain electrodes

[0027] 116A, 116B, 116C, 116D gate electrodes

[0028] 118A, 118B, 118C, 118D channel area

[0029] 120C, 120D semiconductor layer

[0030] 122 protrusion

[0031] 124 protrusion

[0032] 200 Electronic modulation device

[0033] 202 first substrate

[0034] 204 gate insulation layer

[0035] 206 passivation layer

[0036] 208 transistors

[0037] 210 source electrode

[0038] 212 drain electrode

[0039] 214 gate electrode

[0040] 216 semiconductor layer

[0041] 218 Channel Area

[0042] 220 conductive elements

[0043] 220' conductive element

[0044] 222 Modulation Electrode

[0045] 222' Modulation Electrode

[0046] 224 Second substrate

[0047] 226 Display Component Layer

[0048] 228 common electrode

[0049] 230 spacers

[0050] 232 Modulation medium layer

[0051] 234 first electrode

[0052] 236 Second Electrode

[0053] 238 Cavity

[0054] 300 Electronic Modulation Device

[0055] 400 Electronic Modulation Device

[0056] 402 Data Line

[0057] 404 scan lines

[0058] 406A, 406B modulation units

[0059] 408A, 408B transistors

[0060] 410A, 410B modulation electrodes

[0061] 500A, 500B, 500C, 500D electronic modulation devices

[0062] 502 data cable

[0063] 504 scan lines

[0064] 506A, 506B, 506C, 506D modulation units

[0065] 508A, 508B, 508C, 508D transistors

[0066] 510A, 510B, 510C, 510D modulation electrodes

[0067] C1, C2 fillet

[0068] D1 First direction

[0069] D2 Second direction

[0070] E, G, L, H, M, K, P, Q, R, S reference points

[0071] G1, G2, G3, G4 groups

[0072] L1, L2, L3, L4, L5, L6 length

[0073] S1, S2 distance

[0074] V1, V2, V3, V4, V5, V6, V8, V10, V11, V12, V13 directions

[0075] W Width

[0076] Z1, Z2, Z3 imaginary rectangles

[0077] Z5 Overlap Area

[0078] θ A First angle

[0079] θ B The second angle

[0080] θ3 The third angle DETAILED DESCRIPTION

[0081] The following is a detailed description of the electronic modulation device and its manufacturing method according to some embodiments of the present application. It should be understood that for the purpose of explanation, many different specific details and embodiments are described in the following detailed description to provide a complete understanding of some embodiments of the present application. Of course, the exemplary embodiments described herein are for illustrative purposes only, and the inventive concepts may be implemented in various forms, without being limited to these exemplary embodiments. In addition, similar and / or corresponding reference numerals may be used in the drawings of different embodiments to indicate similar and / or corresponding elements. However, the use of similar and / or corresponding reference numerals in the drawings of different embodiments does not imply any relationship between the different embodiments. Furthermore, in this specification, for example, the expression "a first material layer is disposed on or above a second material layer" may refer to direct contact between the first material layer and the second material layer, or may refer to a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In such cases, the first material layer and the second material layer may not be in direct contact.

[0082] Furthermore, relative terms are used in this specification. For example, the terms "above" or "below" are used to describe the position of one element relative to another element. It should be understood that if the device is turned upside down, the element at the "bottom" will become the element at the "top".

[0083] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, parts, and / or sections, these elements, components, regions, layers, parts, and / or sections should not be limited by these terms, and these terms are merely used to distinguish different elements, components, regions, layers, parts, and / or sections. Thus, a first element, component, region, layer, part, and / or section discussed below may be referred to as a second element, component, region, layer, part, and / or section without departing from the teachings of some embodiments of the present application.

[0084] Some embodiments of this application may be combined with the attached Figure 1 It is understood that the drawings of the embodiments of the present application are also considered part of the description of the embodiments of the present application. It should be understood that the drawings of the embodiments of the present application are not drawn to scale with actual devices and components. In addition, the structures and devices in the drawings are drawn in a schematic manner to simplify the drawings.

[0085] Here, the terms "about," "approximately," and "substantially" generally mean within 20%, preferably within 10%, and more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The quantities given here are approximate quantities, that is, even if "about," "approximately," or "substantially" is not specifically stated, the meaning of "about," "approximately," or "substantially" may still be implied. In addition, when taking into account deviations or fluctuations in the manufacturing process, the term "same" may also include the meaning of "approximately," "approximately," or "substantially."

[0086] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meanings as commonly understood by those skilled in the art. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and this application, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the examples of this application.

[0087] Furthermore, unless otherwise specified, terms related to joining or connecting, such as "connect," "interconnect," and the like, may refer to two structures being fixed or attached in direct contact, or to two structures being fixed or attached in indirect contact via an intermediate structure. Furthermore, such terms may include situations where both structures are movable or both structures are fixed.

[0088] Furthermore, the term "longitudinal direction" is defined as a direction along or parallel to the long axis of an object. The long axis is defined as a line extending longitudinally through the center of an object. For oblong or elliptical objects, the long axis corresponds approximately to the object's longest longitudinal dimension. For objects without a well-defined long axis, the long axis is the longest axis of the smallest rectangle that can enclose the object.

[0089] In addition, the phrase "a range between a first value and a second value" means a range including the first value, the second value, and other values between the first and second values.

[0090] According to some embodiments of the present application, an electronic modulation device is provided. The electronic modulation device comprises multiple electronic units, each of which has different angles between the extension direction of a transistor's channel region and the length direction of a modulation electrode. Consequently, information received from the electronic modulation device in different directions exhibits minimal variation.

[0091] Figure 1 FIG1 is a top view of an electronic modulation device 100 according to some embodiments of the present application. It is worth noting that: Figure 1 The electronic modulation device 100 shown in FIG. 1 omits some components for clarity. It is also worth noting that additional components may be added to the electronic modulation device 100 in some embodiments of the present application. Components described in some embodiments of the present application below may be replaced or removed.

[0092] like Figure 1 As shown, the electronic modulation device 100 includes a plurality of data lines 102 and scan lines 104. At least one data line 102 may extend along a first direction D1 (e.g., the Y direction), and at least one scan line 104 may extend along a second direction D2 (e.g., the X direction), where the second direction D2 is different from the first direction D1. The data lines 102 and the scan lines 104 may define a plurality of modulation units or pixels. In some embodiments, the electronic modulation device 100 includes a plurality of modulation units 106A and 106B, which are electrically connected to the data lines 102 and the scan lines 104, respectively. For example, the source electrodes of some modulation units 106A and 106B may be electrically connected to the data lines 102. In another example, the gate electrodes of some modulation units 106A and 106B may be electrically connected to the scan lines 104. Furthermore, the modulation units 106A and / or the modulation units 106B may be arranged along the first direction D1. Various variations and / or adjustments may be made to the embodiments of the present application. In some embodiments, the modulation unit 106A and / or the modulation unit 106B may be arranged along the second direction D2.

[0093] like Figure 1 As shown, at least one modulation unit 106A includes a transistor 108A and a modulation electrode 110A, and at least one modulation unit 106B includes a transistor 108B and a modulation electrode 110B. In some embodiments, the modulation electrodes (110A and 110B) and the common electrode (such as Figure 8 The arrangement direction of the modulation medium (such as liquid crystal) of the electronic modulation device 100 is controlled by the electric field between the two components (as shown), so that the electronic modulation device 100 can emit and / or receive electromagnetic radiation (such as light or microwaves) with different wavelengths.

[0094] See Figure 2A and Figure 2B, which illustrates an enlarged top view of the modulation unit 106A and the modulation unit 106B according to some embodiments of the present application. Figure 2A As shown, transistor 108A includes a source electrode 112A, a drain electrode 114A, a gate electrode 116A, and a channel region 118A. Source electrode 112A and drain electrode 114A may be disposed on opposite sides of gate electrode 116A. Channel region 118A may be formed between source electrode 112A and drain electrode 114A. Furthermore, drain electrode 114A may be electrically connected to modulation electrode 110A.

[0095] like Figure 2B As shown, transistor 108B includes a source electrode 112B, a drain electrode 114B, a gate electrode 116B, and a channel region 118B. Source electrode 112B and drain electrode 114B are disposed on opposite sides of gate electrode 116B. Channel region 118B may be formed between source electrode 112B and drain electrode 114B. Furthermore, drain electrode 114B may be electrically connected to modulation electrode 110B. Source electrode 112B, gate electrode 116B, and channel region 118B of modulation unit 106B may be the same as or similar to source electrode 112A, gate electrode 116A, and channel region 118A of modulation unit 106A, respectively.

[0096] In some embodiments, one difference between the modulation unit 106A and the modulation unit 106B is the angle between the extension direction of the channel region and the length direction of the modulation electrode. Figure 2A and Figure 2B As shown, directions V1 and V2 can be considered the extension directions of channel region 118A and channel region 118B, respectively. Furthermore, direction V1 of channel region 118A can be substantially parallel to direction V2 of channel region 118B. The extension direction of the channel region can be determined by the direction of a line connecting two reference points located on the drain electrode and the source electrode, respectively. These two reference points can overlap with the channel region.

[0097] For example, Figure 2A As shown, direction V1 of channel region 118A can be determined by reference point E on source electrode 112A and reference point F on drain electrode 114A. Similarly, direction V2 of channel region 118B can be determined by reference point G on source electrode 112B and reference point H on drain electrode 114B. More specifically, the positions of reference points E and F of modulation element 106A can correspond to the positions of reference points G and H of modulation element 106B, such that direction V1 can be substantially parallel to direction V2.

[0098] In some embodiments, the modulation electrode 110A may be rectangular. The length direction of the modulation electrode 110A may be substantially parallel to the long side of the modulation electrode 110A. Similarly, the length direction of the modulation electrode 110B may be substantially parallel to the long side of the modulation electrode 110B. In this embodiment, direction V3 (which may be substantially parallel to the long side of the modulation electrode 110A) may be the length direction of the modulation electrode 110A. Direction V4 (which may be substantially parallel to the long side of the modulation electrode 110B) may be the length direction of the modulation electrode 110B. Figure 2A and Figure 2B As shown, the length direction (direction V4) of the modulation electrode 110B may be different from the length direction (direction V3) of the modulation electrode 110A.

[0099] In some embodiments, such as Figure 2A and Figure 2B As shown, the first angle θ between the direction V1 and the direction V3 A Different from the second angle θ between the direction V2 and the direction V4 B . That is, the angle between the extension direction of the transistor 108A of the modulation unit 106A and the length direction of the modulation electrode 110A may be different from the angle between the extension direction of the transistor 108B of the modulation unit 106B and the length direction of the modulation electrode 110B. Because the length direction of the modulation electrode affects the arrangement direction of the modulation medium, the arrangement direction of the modulation medium of the modulation unit 106A may be different from the arrangement direction of the modulation medium of the modulation unit 106B. That is, the arrangement direction of the modulation medium may change with the angle of the modulation unit. In addition, the direction V1 may be parallel to the direction V2, so that the variation of the photolithography and / or etching process used to form the components of the modulation unit 106A and the modulation unit 106B is reduced. In addition, the difference between the aspect ratios of the channel region 118A and the channel region 118B can also be reduced.

[0100] In some embodiments, the first angle θ A and the second angle θ B The difference (or difference) between the two angles can be greater than 15 degrees. A and the second angle θ B The difference between the first angle θ and the second angle θ may be in the range of 15 to 90 degrees, such as 30 or 60 degrees. A and the second angle θ B The difference between the two can be in the range of 45 degrees to 90 degrees. In some cases, the first angle θ A and the second angle θ B The difference between them is not less than 15 degrees. A and the second angle θ BThe difference between them is less than 15 degrees. When the receiver is not in the expected position, the information transmitted by the electronic modulation device may be affected. It is worth noting that the angle between the extension direction of the channel region and the length direction of the modulation electrode can include acute angles and obtuse angles. The first angle θ A and the second angle θ B It may refer to an acute angle, but the application is not limited thereto.

[0101] In some embodiments, such as Figure 2A and Figure 2B As shown, due to the different extension directions of the modulation electrode 110A and the modulation electrode 110B, the length L1 of the drain electrode 114A may be different from the length L2 of the drain electrode 114B. The lengths L1 and L2 may be measured along the second direction D2 (e.g., the X direction). In some embodiments, the distance S1 between the channel region 118A and the modulation electrode 110A may be different from the distance S2 between the channel region 118B and the modulation electrode 110B. The distances S1 and S2 may be measured along the second direction (e.g., the X direction). It is worth noting that the distances S1 and S2 may be defined by the minimum distance between the channel region and the modulation electrode, and that the distances S1 and S2 are not limited to being measured along the second direction D2, but must be measured along the same direction.

[0102] Figure 2A and Figure 2B The source electrode, drain electrode, and channel region are each shown as a rectangle. Various changes and / or adjustments can be made to the embodiments of the present application. Figure 3A and Figure 3B , which illustrates an example of the extension direction of the channel region according to some embodiments of the present application. Figure 3A As shown, the modulation unit 106C includes a transistor 108C and a modulation electrode 110C. The transistor 108C may have a source electrode 112C, a drain electrode 114C, a gate electrode 116C, a channel region 118C, and a semiconductor layer 120C. The channel region 118C may be disposed between the source electrode 112C and the drain electrode 114C. The channel region shown in the drawings of this application is for example only and is not intended to limit the scope of this application. Those skilled in the art will be aware of the scope of the channel region in practice, and the details will not be repeated here. The source electrode 112C and the drain electrode 114C have a plurality of protrusions 122 and 124, respectively, so that the channel region 118C can have a curved shape.

[0103] In this embodiment, the extension direction of the channel region 118C can be defined by two reference points located on the source electrode 112C and the drain electrode 114C, respectively. These two reference points can be arbitrarily selected from the source electrode 112C and the drain electrode 114C, and the source electrode 112C and the drain electrode 114C overlap with the channel region 118C. For example, direction V5 (defined by reference point K on the source electrode 112C and reference point L on the drain electrode 114C) can be defined as the extension direction of the channel region 118C. In other embodiments, direction V6 (defined by reference point K on the source electrode 112C and reference point M on the drain electrode 114C) can also be defined as the extension direction of the channel region 118C. The position of the reference point used to define the extension direction of one transistor can be the same as or correspond to the position of the reference point used to define the extension direction of another transistor. In some examples, the extension directions of the channel regions of the transistors of at least two modulation units can be substantially parallel to each other. More specifically, the angle between the extension direction of the transistor and the length direction of the modulation electrode may vary according to the length direction of each modulation electrode.

[0104] Various changes and / or adjustments may be made to the embodiments of the present application. In some embodiments, the extension direction of the transistor may be defined in other ways. Figure 3B As shown, a minimum imaginary rectangle Z1 can enclose the channel area 118C. In this embodiment, the extension direction of the channel area 118C may refer to the extension direction of the imaginary rectangle Z1, such as the direction of the long side of the imaginary rectangle Z1. In other embodiments, the extension direction of the imaginary rectangle Z1 may also be the direction of the short side of the imaginary rectangle Z1.

[0105] In addition, if Figure 3B As shown, the aspect ratio of the channel region 118C can be defined by the ratio of the width W of the channel region 118C to the length L3. The width W of the channel region 118C can be the total length of the channel region 118C. The length L3 can be the length of the long side of the imaginary rectangle Z1.

[0106] Various changes and / or adjustments may be made to the embodiments of the present application. In some embodiments, the source electrode and the drain electrode may have different shapes. Figure 4A and Figure 4B , which illustrates an example of the definition of the extension direction of the channel region according to some embodiments of the present application. Figure 4A and Figure 4B As shown, the modulation unit 106D includes a transistor 108D and a modulation electrode 110D. The transistor 108D may include a source electrode 112D, a drain electrode 114D, a gate electrode 116D, a channel region 118D, and a semiconductor layer 120D disposed between the source electrode 112D and the gate electrode 116D. The shapes of the source electrode 112D and the drain electrode 114D are different from Figure 3AFurthermore, the channel region 118D and the channel region 118C have different aspect ratios.

[0107] In this embodiment, the extension direction of the channel region 118D can be defined by two reference points located on the source electrode 112D and the drain electrode 114D, respectively. The gate electrode 116D and the semiconductor layer 120D form an overlapping region. The two reference points can be arbitrarily selected from the source electrode 112D and the drain electrode 114D located within the overlapping region. For example, direction V8 (which can be defined by reference point P on the source electrode 112D and reference point Q on the drain electrode 114D) can be considered the extension direction of the channel region 118D.

[0108] Various changes and / or adjustments may be made to the embodiments of the present application. In some embodiments, the extension direction of the transistor may be defined in other ways. Figure 4B As shown, a minimum imaginary rectangle Z2 can enclose the channel area 118D. In this embodiment, the extension direction of the channel area 118D can refer to the extension direction of the imaginary rectangle Z2, for example, the direction of the long side of the imaginary rectangle Z2. The aspect ratio of the channel area 118D can be defined by the ratio of the width W of the channel area 118D to the length L4. The width W of the channel area 118D can be the total length of the channel area 118D. The length L4 can be the length of the long side of the imaginary rectangle Z2.

[0109] See Figure 5A and Figure 5B , which illustrates an example of the definition of the length direction of the modulation electrode according to some embodiments of the present application. In some embodiments, such as Figure 5A As shown, the modulation electrode 110E has a rectangular shape. In this embodiment, the direction V10 (which may be parallel to the long side of the modulation electrode 110E) may be defined as the length direction of the modulation electrode 110E. In some embodiments, the modulation electrode 110F may have an irregular shape. Figure 5B A minimum imaginary rectangle Z3 is shown, which can enclose the modulation electrode 110F. In this embodiment, direction V11 (which can be parallel to the long side of the imaginary rectangle Z3) can be considered the length direction of the modulation electrode 110F. The aforementioned minimum imaginary rectangle can be derived using software (e.g., OpenCV) or other suitable software.

[0110] See Figure 6 , which illustrates an enlarged top view of a modulation unit of an electronic modulation device according to some embodiments of the present application. Figure 6As shown, modulation unit 106G includes transistor 108G and modulation electrode 110G. Transistor 108G includes drain electrode 114G, which is electrically connected to modulation electrode 110G. Drain electrode 114G and modulation electrode 110G form an overlapping region Z5. In some embodiments, the ratio of the area of overlapping region Z5 to the area of modulation electrode 110G may be in a range of 5% to 50%, such as 15% or 35%. In some embodiments, the ratio of the area of overlapping region Z5 to the area of modulation electrode 110G may be in a range of 5% to 20%. If the ratio of the area of overlapping region Z5 to the area of modulation electrode 110G is in a range of 5% to 50%, the charging speed of the modulation electrode can be improved.

[0111] like Figure 6 As shown, the third angle θ3 is located between the length direction of the overlapping area Z5 and the length direction of the modulation electrode 110G. Figure 6 As shown, direction V12 can be considered the length direction of the overlap region Z5, and direction V13 can be considered the length direction of the modulation electrode 110G. In this embodiment, the third angle θ3 between the length direction of the overlap region Z5 and the length direction of the modulation electrode 110G can be 90 degrees. Various variations and / or adjustments can be made to the embodiments of the present application. In some embodiments, the third angle θ3 between the length direction of the overlap region Z5 and the length direction of the modulation electrode 110G can be in the range of 70 degrees to 110 degrees, for example, 80 degrees, 90 degrees, or 100 degrees.

[0112] See Figure 7A and Figure 7B , which illustrates an example of a modulation electrode of an electronic modulation device according to some embodiments of the present application. Figure 7A and Figure 7B As shown, the modulation electrodes 110H and 110I of the electronic modulation device may have different areas and shapes. In some embodiments, the contours of the modulation electrodes 110H and 110I may have rounded corners. Rounded corners can help reduce electron accumulation at sharp points, thereby reducing electrostatic discharge (ESD).

[0113] like Figure 7A and Figure 7B As shown, because the area of the modulation electrode 110H may be different from the area of the modulation electrode 110I, the radius of curvature C1 of the corner of the modulation electrode 110H may be different from the radius of curvature C2 of the corner of the modulation electrode 110I. In an embodiment where the area of the modulation electrode 110H is larger than the area of the modulation electrode 110I, the radius of curvature C1 may be larger than the radius of curvature C2.

[0114] See Figure 8, which illustrates a cross-sectional view of an electronic modulation device 200 according to some embodiments of the present application. It is worth noting that: Figure 8 The electronic modulation device 200 shown in FIG. 2 omits some components for clarity. It is also worth noting that additional components may be added to the electronic modulation device 200 in some embodiments of the present application. Components described in some embodiments of the present application below may be replaced or removed.

[0115] like Figure 8 As shown, the electronic modulation device 200 includes a first substrate 202. The first substrate 202 can be used to support transistors, modulation electrodes, and other components. The first substrate 202 can include a glass substrate, a ceramic substrate, a plastic substrate, and / or other suitable substrates. A gate insulating layer 204 and a passivation layer 206 are formed on the first substrate 202. The gate insulating layer 204 can include silicon dioxide or a high-k dielectric material, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), a low-k dielectric material, or other suitable dielectric materials. The low-k dielectric material may include, but is not limited to, fluorinated silica glass (FSG), carbon doped silicon oxide, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), polyimide, combinations thereof, and other suitable materials. The gate insulation layer 204 and the passivation layer 206 may be formed by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or other suitable deposition processes.

[0116] In addition, the electronic modulation device 200 includes a transistor 208 formed on the first substrate 202. Figure 8As shown, the transistor 208 includes a source electrode 210, a drain electrode 212, a gate electrode 214, and a semiconductor layer 216. The gate electrode 214 may be disposed on the first substrate 202. The gate electrode 214 may include a metal material. For example, the gate electrode 214 may include copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), but is not limited thereto. The gate electrode 214 may be formed by a sputtering process, but is not limited thereto. The semiconductor layer 216 may be disposed on the gate insulating layer 204. The material of the semiconductor layer 216 may include amorphous silicon, polycrystalline silicon, such as low-temp polysilicon (LTPS), metal oxide, or other suitable materials, but is not limited thereto. The metal oxide includes indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), and indium gallium zinctin oxide (IGZTO), but is not limited thereto. The source electrode 210 and the drain electrode 212 may be formed on the gate insulating layer 204. In addition, the source electrode 210 and the drain electrode 212 may be disposed on the gate electrode 214 and located on both sides of the gate electrode 214. In addition, portions of the source electrode 210 and the drain electrode 212 are formed on the semiconductor layer 216. The material and formation method of the source electrode 210 and the drain electrode 212 may be the same as or similar to the material and formation method of the gate electrode 214. Figure 8 As shown, the channel region 218 may be formed in the gate insulating layer 204 and located between the source electrode 210 and the drain electrode 212. It should be noted that the transistor structure described herein is only an example for description, and transistors with other suitable structures, such as a top-gate transistor, may be used.

[0117] Figure 8 The gate insulating layer 204 shown is disposed on the gate electrode 214. Various changes and / or adjustments may be made to the embodiments of the present application. In some embodiments, the gate electrode 214 may be formed on the passivation layer 206 and located at the same horizontal layer as the modulation electrode 222. In some embodiments, the electronic modulation device 200 includes two gate electrodes, and the two gate electrodes are located at the same horizontal layer. For example, the two gate electrodes may be formed on the first substrate 202. In some embodiments, the electronic modulation device 200 includes two gate electrodes, and the two gate electrodes are located at different horizontal layers. For example, one gate electrode is disposed on the first substrate 202, and the other gate electrode is disposed on the passivation layer 206.

[0118] like Figure 8As shown, the electronic modulation device 200 includes a conductive element 220 and a modulation electrode 222. The modulation electrode 222 can be electrically connected to the drain electrode 212 via the conductive element 220. The materials of the conductive element 220 and the modulation electrode 222 can be the same or similar to the material of the gate electrode 214. In some embodiments, a photolithography process and an etching process are performed on the passivation layer 206 to form an opening. Thereafter, a metal material is filled into the opening and deposited on the passivation layer 206. Then, a photolithography process and an etching process are performed to pattern the metal material disposed on the passivation layer 206. In this way, the conductive element 220 and the modulation electrode 222 are formed. The photolithography process includes, but is not limited to, photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, developing the photoresist, rinsing, and drying (e.g., hard baking). Furthermore, the photolithography process may be performed or replaced by other suitable processes, such as maskless photolithography, electron-beam writing, ion-beam writing, or a combination thereof. The etching process may include, but is not limited to, a dry etching process, a wet etching process, and / or a combination thereof.

[0119] like Figure 8 As shown, the electronic modulation device 200 includes a second substrate 224. The second substrate 224 can be used to set a common electrode and / or other components. The second substrate 224 can include a glass substrate, a ceramic substrate, a plastic substrate and / or other suitable substrates. A display element layer 226 can be formed on the second substrate 224. The display element layer 226 can include a color filter layer, a light shielding layer, a passivation layer, and other suitable components or layers, but is not limited thereto. In some embodiments, the display element layer 226 can be omitted. In addition, a common electrode 228 can be formed on the second substrate 224. The material and formation method of the common electrode 228 can be the same as or similar to the material and formation method of the gate electrode 214. Figure 8 The common electrode 228 is shown as unpatterned. Various variations and / or adjustments may be made to the embodiments of the present application. In some embodiments, the common electrode 228 may be patterned such that the common electrode 228 has discontinuous portions. The patterned common electrode 228 may correspond to the modulation electrode 222.

[0120] like Figure 8As shown, the electronic modulation device 200 may further include a spacer 230 and a modulation medium layer 232. The modulation medium layer 232 may be disposed between the modulation electrode 222 and the common electrode 228. For example, the modulation medium layer 232 may include a liquid crystal layer or other suitable layer. The spacer 230 may be configured to determine the cell gap between the first substrate 202 and the second substrate 224. In some embodiments, the spacer 230 may include polyethylene terephthalate (PET), polyethylene (PE), polyether sulfone (PES), polymethylmethacrylate (PMMA), glass, any other suitable material, or a combination thereof, but is not limited thereto. The voltage difference between the modulation electrode 222 and the common electrode 228 may determine the alignment of the modulation medium layer 232. The voltage of the modulation electrode 222 is controlled by the transistor 208, so that the alignment of the modulation medium layer 232 changes with the voltage of the modulation electrode 222.

[0121] Furthermore, the modulation medium layer 232 can be applied to different liquid crystal modes depending on the electrode structure or the alignment of the polyimide layer. In some embodiments, the material of the modulation medium layer 232 may include, but is not limited to, nematic liquid crystal, smectic liquid crystal, cholesteric liquid crystal, blue phase liquid crystal, or other suitable liquid crystal materials.

[0122] like Figure 8 As shown, the overlapping portion between the drain electrode 212 and the modulation electrode 222 has a length L5, and the modulation electrode 222 has a length L6. In some embodiments, the ratio of the length L5 to the length L6 of the modulation electrode 222 is in a range of 30% to 90%, such as 50% or 70%. If the ratio of the length L5 to the length L6 of the modulation electrode 222 is in a range of 30% to 90%, the impedance of the electronic modulation device 200 can be reduced. The lengths L5 and L6 can be measured along the length direction of the modulation electrode 222. However, the lengths L5 and L6 can be measured along other directions, and the present application is not limited thereto.

[0123] See Figure 9 , which illustrates a cross-sectional view of an electronic modulation device 300 according to some embodiments of the present application. Figure 9As shown, the electronic modulation device 300 includes a first electrode 234 disposed on the first substrate 202 and a second electrode 236 disposed on the second substrate 224. The modulation electrode 222' can be disposed between the first electrode 234 and the second electrode 236 and electrically connected to the drain electrode 212 via the conductive element 220'. The materials and formation methods of the conductive element 220', the modulation electrode 222', the first electrode 234, and the second electrode 236 can be the same or similar to those of the modulation electrode 222 and are not repeated here. The first electrode 234 and the second electrode 236 can be separated by a spacer 230 and a cavity 238. The cavity 238 can contain air or oil, but is not limited thereto.

[0124] In some embodiments, the voltages of the first electrode 234 and the second electrode 236 can be fixed. The voltage of the modulation electrode 222' can be controlled by the transistor 208. When the voltage of the modulation electrode 222' changes, the modulation electrode 222' can be shifted accordingly. When the position of the modulation electrode 222' changes, the capacitance between the second electrode 236 and the modulation electrode 222' or the capacitance between the first electrode 234 and the modulation electrode 222' can be changed accordingly. Therefore, the electronic modulation device 300 can transmit and / or receive electromagnetic radiation having different wavelengths (e.g., light or microwaves).

[0125] See Figure 10 , which illustrates a top view of an electronic modulation device 400 according to some embodiments of the present application. Figure 10 As shown, an electronic modulation device 400 includes a plurality of data lines 402 and scan lines 404. At least one data line 402 may extend along a first direction D1, and at least one scan line 404 may extend along a second direction D2, where the second direction D2 is different from the first direction D1. The electronic modulation device 400 also includes a modulation unit 406A and a modulation unit 406B. The modulation unit 406A includes a transistor 408A and a modulation electrode 410A. The modulation unit 406B includes a transistor 408B and a modulation electrode 410B. In some embodiments, the area of the modulation electrode 410A may differ from the area of the modulation electrode 410B. Furthermore, the radius of curvature of the corners of the modulation electrode 410A may differ from the radius of curvature of the corners of the modulation electrode 410B. Furthermore, the length direction of the modulation electrode 410A may differ from the length direction of the modulation electrode 410B. In this way, the angle between the extension direction of the channel region of the transistor 408A and the length direction of the modulation electrode 410A can be different from the angle between the extension direction of the channel region of the transistor 408B and the length direction of the modulation electrode 410B. Figure 10 For example, the arrangement of the modulation unit 406A and the modulation unit 406B can be the same as Figure 1The arrangement shown is the same, and the scope of this application is not limited thereto. In some embodiments, the size of modulation electrode 410A of modulation unit 406A may be different from the size of modulation electrode 410B of modulation unit 406B. In some examples, the different sizes of the modulation electrodes may correspond to different aspect ratios of the channel region, but this application is not limited thereto.

[0126] In some embodiments, at least one data line 402 and at least one scan line 404 may have a wave shape. Therefore, the electronic modulation device 400 may be applied to curved electronic devices. Furthermore, the angles between different channel regions of the transistor (e.g., the channel regions of the modulation unit 406A and the modulation unit 406B) and the data line 402 (or the scan line 404) may be substantially the same.

[0127] See Figures 11A-11D , which illustrates a top view of an electronic modulation device according to some embodiments of the present application. Figures 11A-11D The transistors and modulation electrodes are shown to have different arrangements, but the scope of the present application is not limited thereto.

[0128] like Figure 11A As shown, the electronic modulation device 500A includes modulation units 506A, 506B, 506C, and 506D. The modulation units 506A, 506B, 506C, and 506D respectively include a transistor 508A, 508B, 508C, or 508D and a modulation electrode 510A, 510B, 510C, or 510D. Figure 11A As shown, the channel regions of transistors 508A, 508B, 508C, and 508D may extend in substantially parallel directions. Furthermore, the length directions of the modulation electrodes 510A, 510B, 510C, and 510D may differ from one another. Thus, the angles between the extension directions of the channel regions of the transistors and the length directions of the modulation electrodes of the modulation units 506A, 506B, 506C, and 506D may differ from one another. In some embodiments, a portion of the modulation units 506A, 506B, 506C, and 506D may be arranged along a first direction D1. Various variations and / or adjustments may be made to the embodiments of the present application. In some embodiments, the modulation units 506A, 506B, 506C, and 506D may be arranged along a second direction D2.

[0129] like Figure 11B As shown, the electronic modulation device 500B includes a plurality of modulation units 506A and modulation units 506C. In some embodiments, the modulation units 506A and modulation units 506C are alternately arranged along the second direction D2. In addition, the modulation units 506A and modulation units 506C are alternately arranged along the first direction D1.

[0130] like Figure 11CAs shown, the electronic modulation device 500C includes a plurality of modulation units 506A and modulation units 506C. In some embodiments, the four modulation units 506A can be classified into a group G1 of a 2×2 array, and the four modulation units 506C can be classified into a group G2 of a 2×2 array. Group G1 and group G2 can be arranged alternately along the second direction D2. In addition, group G1 and group G2 can be arranged alternately along the first direction D1. Various changes and / or adjustments can be made to the embodiments of the present application. In some embodiments, group G1 and / or group G2 can be an m×m array, where m is greater than 2. In some embodiments, group G1 and / or group G2 can be an m×n array, where m and n are greater than or equal to 2, m and n are positive integers, and m is not equal to n. In addition, group G1 and / or group G2 can be an oblique square of an m×m array.

[0131] like Figure 11D As shown, electronic modulation device 500D includes a plurality of groups G3 and G4 in a 2×2 array. Groups G3 and G4 may be arranged alternately along the second direction D2 and the first direction D1. Furthermore, group G3 may be composed of three modulation units 506A and one modulation unit 506B. Group G4 may be composed of three modulation units 506C and one modulation unit 506D. However, the scope of the present application is not limited in this manner.

[0132] Various variations and / or adjustments can be made to the embodiments of the present application. For example, the electronic modulation device can include modulation units with different arrangements. Furthermore, the area of the modulation electrode can be varied. Furthermore, the aspect ratio of the transistor's channel region can be optimized based on the area of the modulation electrode.

[0133] In summary, the present application provides an electronic modulation device. The electronic modulation device has a modulation unit having different angles. The angle can be located between the extension direction of the channel region of the transistor and the length direction of the modulation electrode. Therefore, when the receiver is located in an unexpected position, the information transmitted by the electronic device will not be affected. In addition, the electronic modulation device described in the embodiment can be applied to structures such as microelectromechanical systems (MEMS), antenna devices, and display devices, and the scope of the present application is not limited thereto.

[0134] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the claims.

Claims

1. An antenna device, comprising: a first transistor; a first modulation electrode electrically connected to the first transistor, wherein the first modulation electrode has a first long axis arranged along a first length direction; a second transistor; as well as A second modulation electrode is electrically connected to the second transistor, and the second modulation electrode has a second long axis arranged along a second length direction, wherein the second length direction is different from the first length direction. By adjusting the electric field between the first modulation electrode and the second modulation electrode and the common electrode, the arrangement direction of the modulation medium of the antenna device is controlled, so that the antenna device can emit and / or receive electromagnetic radiation with different wavelengths.

2. The antenna device according to claim 1, wherein The first transistor includes an electrode, wherein the electrode and the first modulation electrode form an overlapping region, a ratio of an area of the overlapping region to an area of the first modulation electrode is in the range of 5% to 50%, and a ratio of a length of the overlapping region to a length of the first modulation electrode is in the range of 30% to 90%.

3. The antenna device according to claim 2, further comprising: a scan line extending along a first direction and electrically connected to the first transistor, wherein the scan line has a waveform; as well as A data line extends along a second direction different from the first direction and is electrically connected to the first transistor.

4. The antenna device according to claim 2, wherein The ratio of the area of the overlapping region to the area of the first modulation electrode is in a range from 15% to 35%.

5. An antenna device comprising: a first transistor comprising a channel region arranged along an extension direction; a first modulation electrode electrically connected to the first transistor, wherein the first modulation electrode has a first long axis arranged along a first length direction; a second transistor comprising a channel region arranged along the extending direction; and a second modulation electrode electrically connected to the second transistor, wherein the second modulation electrode has a second long axis arranged along a second length direction; A first angle between the extension direction and the first length direction is different from a second angle between the extension direction and the second length direction. By adjusting the electric field between the first modulation electrode and the second modulation electrode and the common electrode, the arrangement direction of the modulation medium of the antenna device is controlled, so that the antenna device can emit and / or receive electromagnetic radiation with different wavelengths.

6. The antenna device according to claim 5, further comprising: a scan line extending along a first direction and electrically connected to the first transistor, wherein the scan line has a waveform; as well as A data line extends along a second direction different from the first direction, and the data line is electrically connected to the first transistor.

7. The antenna device according to claim 5, wherein: The first transistor further includes a first drain electrode electrically connected to the first modulation electrode. The second transistor further includes a second drain electrode electrically connected to the second modulation electrode. A length of the first drain electrode is different from a length of the second drain electrode.

8. The antenna device as claimed in claim 5, further comprising: a first substrate, wherein the first modulation electrode is disposed on the first substrate; as well as A second substrate is disposed opposite to the first substrate, wherein the second modulation electrode is disposed on the second substrate, and the first modulation electrode and the second modulation electrode are separated by a spacer and a cavity.

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