A packaging chip manufacturing process

Abstract

This invention discloses a chip packaging manufacturing process. By designing a novel chip packaging manufacturing process, this invention reduces the cost of the required equipment, eliminates the need for molds, and saves production time. Furthermore, vacuum printing provides better protection for the product, resulting in a higher yield. This addresses the problems of high equipment costs, expensive molds, and long production cycles in existing conventional SAW filter manufacturing processes, as well as the stress that conventional molding processes can cause to the internal components of the chip, affecting the internal cavity.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a chip packaging manufacturing process. Background Technology

[0002] SAW filters, short for surface acoustic wave filters, are specialized filtering devices made using piezoelectric materials such as quartz crystals and piezoelectric ceramics. They utilize the piezoelectric effect and the physical characteristics of surface acoustic wave propagation, and are widely used in the intermediate frequency (IF) circuits of televisions and VCRs to replace LC IF filters, significantly improving image and sound quality. Surface acoustic waves (SAWs) are elastic waves generated and propagating on the surface of a piezoelectric substrate, with their amplitude decreasing rapidly with increasing depth into the substrate. Conventional SAW filter manufacturing processes are costly in terms of equipment, molds, and production time. Furthermore, conventional molding processes can put pressure on the components inside the chip, affecting the internal cavities. Summary of the Invention

[0003] To address the aforementioned technical problems, this invention presents a chip packaging manufacturing process.

[0004] The present invention adopts the following technical solution:

[0005] A chip packaging manufacturing process, the process steps of which are as follows:

[0006] S1. Wafer Plasma Cleaning: The surface contaminants on the wafer to be processed are removed by plasma cleaning.

[0007] S2. Wafer ball placement: Gold wires are heated at high temperature and formed into gold balls, which are then installed onto the wafer surface at equal intervals according to size requirements using a ball placement machine.

[0008] S3. Wafer Film Application: Applying UV film to the back of the wafer using a film application machine;

[0009] S4. Wafer dicing: The wafer is diced using a wafer dicing machine to cut it into individual chips according to the product size;

[0010] S5. UV film degumming: The UV film is degummed using a degumming machine.

[0011] S6. Substrate Plasma Cleaning: Remove surface contaminants from the substrate surface to be processed by plasma cleaning.

[0012] S7. Ultrasonic welding: Using a suction nozzle, remove the individual chips one by one after debonding in step 5. Place the gold ball on the individual chip face down on the substrate, so that the gold ball contacts the substrate and the substrate and the wafer are in a parallel state. High-frequency vibration waves are transmitted to the surface of the substrate and the gold ball. Under the pressure of 0.2-10N, the two surfaces rub against each other to form a fusion between the molecular layers, thus completing the welding of the gold ball and the substrate.

[0013] S8. Coating: A protective film is attached to the surface of the substrate, and the protective film covers each individual chip one by one;

[0014] S9. Vacuum printing: Under vacuum conditions and pressures ranging from 100 to 500 Pa, an epoxy resin layer is applied to the surface of the protective film using printing equipment.

[0015] S10. Baking: The epoxy resin is dried and fixed by high-temperature baking;

[0016] S11. Apply UV film 2: Apply a layer of UV film 2 to the surface outside the epoxy resin coating layer;

[0017] S12, Laser cutting: Laser cutting the back of the substrate to the required size;

[0018] S13, UV degumming: The UV film is degummed using a degumming machine;

[0019] S14. Product peeling: Place the product after UV degumming in step S13 onto the peeler. By tapping the back of the product, it falls into the peeler. Then transfer all the products in the peeler into the storage box.

[0020] S15. Drying: Place the products in the storage box into the drying oven to dry;

[0021] S16. Sorting test: Test the corresponding parameter values ​​of the dried individual product particles according to the required range, and screen out qualified individual packaged chips.

[0022] Preferably, in steps S1 and S6, plasma cleaning involves adding oxygen, argon, nitrogen, or an oxygen-argon mixture and generating high-energy, disordered plasma under a certain pressure using a radio frequency power supply. The plasma then bombards the surface of the product to be cleaned to achieve the cleaning purpose.

[0023] Preferably, in step S10, the high-temperature baking temperature is set to 100℃-230℃.

[0024] Preferably, in step S15, the drying temperature is set to 100℃-165℃.

[0025] Preferably, in step S2, the gold balls are mounted to the upper surface of the wafer by soldering.

[0026] Preferably, in step S3, the size of the UV film is larger than the wafer size.

[0027] Preferably, in step S8, the protective film is TSA16.

[0028] The beneficial effects of this invention are: by designing a new chip packaging manufacturing process, the equipment required for the process is cheaper, saving costs; no molds are needed, saving production time; and vacuum printing better protects the product, resulting in a higher yield. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of a structure after the wafer-on-wafer ball-planting process of the present invention;

[0030] Figure 2 This is a schematic diagram of a structure after the wafer lamination process of the present invention;

[0031] Figure 3 This is a schematic diagram of a structure after the wafer dicing process of the present invention;

[0032] Figure 4 This is a schematic diagram of a structure after the ultrasonic welding process of the present invention;

[0033] Figure 5 This is a schematic diagram of a structure after the coating process of this invention;

[0034] Figure 6 This is a schematic diagram of a structure after the vacuum printing process of this invention;

[0035] Figure 7 This is a schematic diagram of a structure after the UV film application process of this invention;

[0036] Figure 8 This is a schematic diagram of a structure after the laser cutting process of this invention;

[0037] Figure 9 This is a schematic diagram of the structure of a packaged chip manufactured after the process of this invention is completed;

[0038] In the diagram: 1. Wafer, 2. Gold ball, 3. UV film one, 4. Substrate, 5. Protective film, 6. Epoxy resin, 7. UV film two. Detailed Implementation

[0039] The technical solution of the present invention will be further described in detail below through specific embodiments and in conjunction with the accompanying drawings:

[0040] Example: A chip packaging manufacturing process, the process steps of which are as follows:

[0041] S1, wafer plasma cleaning, uses plasma to act on the material surface, causing a series of physical and chemical changes. The active particles and high-energy rays contained therein react and collide with the organic pollutant molecules on the surface to form small volatile substances, which are then removed from the surface, achieving a cleaning effect without damaging the wafer.

[0042] S2. Wafer ball placement: Gold wires are heated to high temperature and formed into gold balls 2, which are then mounted onto the upper surface of wafer 1 at equal intervals according to size requirements using a ball placement machine. Figure 1 As shown;

[0043] S3. Wafer film application: A UV film (3) is applied to the back of the wafer using a film application machine. This is used to prevent the wafer from scattering after dicing. Figure 2 As shown;

[0044] S4. Wafer dicing: The wafer is diced using a wafer dicing machine to produce individual wafers of varying sizes (each size varies depending on the requirements of the product). Figure 3 As shown;

[0045] S5, UV debonding: The adhesiveness of the UV film is reduced by the debonding machine, making it easier to remove later;

[0046] S6. Substrate plasma cleaning: Oxygen, argon, nitrogen or oxygen-argon mixture is added and generated under certain pressure by radio frequency power supply to produce high-energy disordered plasma. The plasma bombards the surface of the product to be cleaned to achieve the cleaning purpose.

[0047] S7. Ultrasonic Welding: First, remove the chip after desoldering in step S5 using a suction nozzle. Place the individual chip with the gold ball face down on substrate 4, ensuring the gold ball contacts the substrate. The substrate and wafer are parallel. High-frequency vibration waves are transmitted to the surfaces of the substrate and gold ball. Under a pressure of 0.2-10N, the two surfaces rub against each other, forming a fusion between molecular layers. Figure 4 As shown;

[0048] S8. Coating: A protective film 5 is applied to the chip surface to protect the chip and gold balls, and to prevent the ink layer from entering the cavity between the gold balls and the substrate. Figure 5 As shown;

[0049] S9. Vacuum printing: In a vacuum environment with a pressure range of 100-500Pa, epoxy resin 6 is coated onto the surface of a film using printing equipment. The advantage of vacuum is that it can remove air bubbles in the epoxy resin, increasing the product's hardness (the previous process was plastic encapsulation, which requires a mold for each product, takes a long time to manufacture (2-3 months), and can easily damage the cavity between the chip, gold ball, and substrate; the equipment for plastic encapsulation is also expensive). Figure 6As shown;

[0050] S10. Baking: Baking is to fix the epoxy resin. The baking temperature is set to 100℃-230℃.

[0051] S11. Apply UV film: Apply UV film two to the surface of the epoxy resin coating, such as... Figure 7 As shown;

[0052] S12. Laser cutting: Cut the back of the substrate to the required size, such as... Figure 8 As shown;

[0053] S13, UV debonding: To facilitate product peeling, debonding UV film 2.7;

[0054] S14. Product peeling: Place the product on the peeler and tap it with the back of the product until it falls into the peeler. Then transfer all the products in the peeler into the storage box.

[0055] S15. Drying: Place the products in the storage box into the drying oven to dry. Since there will be moisture after cutting, it is necessary to evaporate the moisture through drying.

[0056] S16. Sorting and testing: After drying, individual particles are tested according to the required range, and qualified individual packaged chips are selected. Figure 9 As shown.

[0057] This invention designs a new chip packaging process that makes the equipment required for the process cheaper, saving costs; it eliminates the need for molds, saving production time; and it provides better protection for the product through vacuum printing, resulting in a higher yield.

[0058] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the present invention in any way. Other variations and modifications are possible without departing from the technical solutions described in the claims.

Claims

1. A chip packaging manufacturing process, characterized in that, The process steps are as follows: S1. Wafer Plasma Cleaning: The surface contaminants on the wafer to be processed are removed by plasma cleaning. S2. Wafer ball placement: Gold wires are heated at high temperature and formed into gold balls, which are then installed onto the wafer surface at equal intervals according to size requirements using a ball placement machine. S3. Wafer Film Application: Applying UV film to the back of the wafer using a film application machine; S4. Wafer dicing: The wafer is diced using a wafer dicing machine to cut it into individual chips according to the product size; S5. UV film degumming: The UV film is degummed using a degumming machine. S6. Substrate Plasma Cleaning: Remove surface contaminants from the substrate surface to be processed by plasma cleaning. S7. Ultrasonic welding: Using a suction nozzle, remove the individual chips one by one after debonding in step 5. Place the gold ball on the individual chip face down on the substrate, so that the gold ball contacts the substrate and the substrate and the wafer are in a parallel state. High-frequency vibration waves are transmitted to the surface of the substrate and the gold ball. Under the pressure of 0.2-10N, the two surfaces rub against each other to form a fusion between the molecular layers, thus completing the welding of the gold ball and the substrate. S8. Coating: A protective film is attached to the surface of the substrate, and the protective film covers each individual chip one by one; S9. Vacuum printing: Under vacuum conditions and pressures ranging from 100 to 500 Pa, an epoxy resin layer is applied to the surface of the protective film using printing equipment. S10. Baking: The epoxy resin is dried and fixed by high-temperature baking; S11. Apply UV film 2: Apply a layer of UV film 2 to the surface outside the epoxy resin coating layer; S12, Laser cutting: Laser cutting the back of the substrate to the required size; S13, UV degumming: The UV film is degummed using a degumming machine; S14. Product peeling: Place the product after UV degumming in step S13 onto the peeler. By tapping the back of the product, it falls into the peeler. Then transfer all the products in the peeler into the storage box. S15. Drying: Place the products in the storage box into the drying oven to dry; S16. Sorting test: Test the corresponding parameter values ​​of the dried individual product particles according to the required range, and screen out qualified individual packaged chips.

2. The chip packaging manufacturing process according to claim 1, characterized in that, In steps S1 and S6, plasma cleaning involves adding oxygen, argon, nitrogen, or a mixture of oxygen and argon gases and generating high-energy disordered plasma under certain pressure using a radio frequency power supply. The plasma then bombards the surface of the product to be cleaned to achieve the cleaning purpose.

3. The chip packaging manufacturing process according to claim 1, characterized in that, In step S10, the high-temperature baking temperature is set to 100℃-230℃.

4. The chip packaging manufacturing process according to claim 1, characterized in that, In step S15, the drying temperature is set to 100℃-165℃.

5. The chip packaging manufacturing process according to claim 1, characterized in that, In step S2, the gold balls are soldered onto the upper surface of the wafer.

6. The chip packaging manufacturing process according to claim 1, characterized in that, In step S3, the UV film has a size larger than the wafer size.

7. The chip packaging manufacturing process according to claim 1, characterized in that, In step S8, the protective film is preferably TSA16.

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