A preheating ring and epitaxial apparatus

Abstract

The present application provides a preheating ring and epitaxial equipment, the preheating ring includes: annular body, the annular body includes upper surface, lower surface opposite to upper surface, inner surface and outer surface opposite to inner surface;The annular body further includes channel, the channel is placed at the exhaust port position of the processing chamber corresponding to the preheating ring, the channel penetrates through the annular body, and the channel forms an included angle greater than zero with the vertical direction.The channel of the present application reduces the pressure difference between the upper and lower cavities, avoids the purge gas from the gap to the vicinity of the substrate edge.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a preheating ring and epitaxial device. Background Technology

[0002] Epitaxial growth is the process of growing a thin film, such as a silicon-germanium thin film or a doped thin film, on a substrate (or wafer). Current technologies typically employ epitaxial equipment to perform these epitaxial processes.

[0003] Existing epitaxial devices include a processing chamber, a base, and a preheating ring. The base supports the substrate, and the preheating ring, positioned around the base, preheats the process gases. The base and preheating ring divide the processing chamber into upper and lower chambers. The upper chamber is purged with process gases to process the substrate, while the lower chamber is purged with purge gases to prevent unwanted deposition of process gases. Deposits in the lower chamber, once detached, form particulate matter, ultimately affecting the quality of the thin film deposition. However, there is a 3-5 mm gap between the base and the preheating ring. Due to the pressure difference between the upper and lower chambers, the purge gas from the lower chamber can surge up into the upper chamber through this gap. This surge of purge gas creates turbulence around the base, affecting the film deposition thickness at the substrate edges. Summary of the Invention

[0004] The purpose of this invention is to provide a preheating ring and epitaxial device to solve the problem of uneven film thickness deposition at the substrate edge.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] A preheating ring is provided for use in an epitaxial device. The epitaxial device includes a processing chamber, a base, and the preheating ring. The base is placed inside the processing chamber and is used to support a substrate. The preheating ring is disposed around the base. The processing chamber includes an inlet and an outlet. The inlet is used to introduce process gases to process the substrate, and the outlet is used to discharge the processed gases from the processing chamber.

[0007] A ring-shaped body, the ring-shaped body including an upper surface, a lower surface opposite to the upper surface, an inner surface, and an outer surface opposite to the inner surface;

[0008] The annular body also includes a channel, which is located at the exhaust port of the preheating ring corresponding to the processing chamber. The channel penetrates the annular body and forms an angle greater than zero with the vertical direction.

[0009] Optionally, the channel includes a first port and a second port, wherein the first port is located at one end of the channel and the second port is located at the other end of the channel.

[0010] Optionally, the first port is located on the upper or outer surface, the second port is located on the lower surface, and the second port is positioned close to the inner surface.

[0011] Optionally, the cross-sectional area of ​​the second port is larger than that of the first port.

[0012] Optionally, the annular body further includes a flange, which is placed on the inner surface of the annular body and located at the exhaust port position of the preheating ring corresponding to the processing chamber.

[0013] Optionally, the annular body includes an upper ring body and a lower ring body positioned below the upper ring body.

[0014] Optionally, the channel includes an upper channel and a lower channel. The upper channel is formed by a groove on the lower surface of the upper ring body, and the lower channel is formed by penetrating the upper and lower surfaces of the lower ring body.

[0015] Optionally, the upper ring is annular, and the inner diameter of the lower ring at the exhaust port position of the preheating ring corresponding to the processing chamber is larger than the inner diameter at other positions of the lower ring, thereby forming the flange.

[0016] Optionally, the channel is at least one.

[0017] Optionally, the cross-section of the channel is a circular hole.

[0018] Optionally, the cross-section of the channel is an oblong hole.

[0019] Optionally, the cross-sectional area of ​​the first port of different channels varies, with the first port of the channel closest to the exhaust port having the smallest cross-sectional area.

[0020] Optionally, the material of the preheating ring includes at least one of quartz, silicon carbide, graphite, ceramic, and sapphire.

[0021] An epitaxial device is also provided, comprising:

[0022] The processing chamber includes an air inlet and an air outlet. The air inlet is used to introduce process gases to process the substrate, and the air outlet is used to discharge the process gases after processing from the processing chamber.

[0023] A base, placed within the processing chamber, for supporting the substrate;

[0024] As described above, the preheating ring is disposed around the base.

[0025] Compared with the prior art, the present invention has the following advantages:

[0026] The channel of the present invention reduces the pressure difference between the upper and lower cavities, preventing the purge gas G2 from surging from the gap to the vicinity of the substrate edge, thus improving the uniformity of film deposition at the substrate edge; the flange of the present invention can further suppress the overflow of purge gas G2 from the gap; the arrangement of the upper and lower rings reduces the risk of preheating ring breakage. Attached Figure Description

[0027] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0028] Figure 1 This is a schematic diagram of the structure of the epitaxial device of the present invention;

[0029] Figure 2 This is a cross-sectional view of the preheating ring and base of the present invention;

[0030] Figure 3 This is another cross-sectional view of the preheating ring and base of the present invention.

[0031] Figure 4 This is another cross-sectional view of the preheating ring and base of the present invention;

[0032] Figure 5 This is another cross-sectional view of the preheating ring and base of the present invention;

[0033] Figure 6 This is a top view of the preheating ring and base of the present invention;

[0034] Figure 7 This is another top view of the preheating ring and base of the present invention;

[0035] Figure 8 This is another top view of the preheating ring and base of the present invention;

[0036] Figure 9 This is another cross-sectional view of the preheating ring and base of the present invention. Detailed Implementation

[0037] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0038] Figure 1 A schematic diagram of the epitaxial device of the present invention is shown. The epitaxial device includes a processing chamber, a base 105, a preheating ring 200, a base support device, and a heating assembly 101. The base 105 is placed inside the processing chamber to support the substrate 104; the preheating ring 200 is arranged around the base to preheat the process gas; the base support device is connected to the base to support the vertical and rotational movement of the base; the heating assembly 101 is placed above and below the processing chamber to provide heat energy for the process; the processing chamber includes an upper dome 116, a lower dome 108, an upper flange 103, a lower flange 107, sidewalls, an upper liner 100, and a lower liner 112. The upper dome 116 is disposed above the sidewalls, and the lower dome 108 is disposed below the sidewalls. The upper flange 103 fixes the upper dome to the upper sidewalls, and the lower flange 107 fixes the lower dome to the sidewalls. Below, both the upper dome 116 and the lower dome 108 are made of quartz, allowing the heat radiation from the heating component 101 to enter the processing chamber. The upper dome 116 is approximately circular, and the sidewalls are approximately annular. The upper liner 100 and the lower liner 112 are placed on the inner surface of the sidewalls, and the preheating ring 200 is placed on the lower liner 112. The processing chamber has an air inlet 113 and an exhaust outlet 106 opposite to the air inlet. The process gas G1 is introduced into the processing chamber through the air inlet channel 114 of the air inlet 113, passes through the surface of the substrate 104, and is discharged from the exhaust outlet 106 by the pumping action of the pump connected to the exhaust outlet 106. The base support device includes a rotating support shaft 109, a support bracket 110, and a pin 111. The rotating support shaft 109 is connected to the base and supports the rotation and lifting of the base. The support bracket 110 supports the substrate 104 via the pin 111 when the rotating support shaft 109 descends, separating it from the base and allowing the substrate to be removed. The processing chamber also includes a pyrometer 102 for temperature measurement. Figure 1It can be seen that the base divides the processing chamber into an upper chamber and a lower chamber, but there will be a gap between the base 105 and the preheating ring 200. Therefore, the upper chamber and the lower chamber are connected. Due to the pressure difference between the upper chamber and the lower chamber, the purge gas G2 will surge from the gap, which will eventually lead to uneven distribution of the process gas G1 at the edge of the substrate 104, resulting in uneven epitaxial film deposition at the edge of the substrate 104.

[0039] This invention provides a preheating ring 200, with... Figure 2 A cross-sectional view of the preheating ring and the base is shown. The preheating ring 200 includes an annular body comprising an upper surface 201, a lower surface 203 opposite to the upper surface, an inner surface 202, and an outer surface 204 opposite to the inner surface. The annular body also includes a channel 300, which is located at the exhaust port 106 of the preheating ring 200 corresponding to the processing chamber. The channel 300 penetrates the annular body and forms a positive angle θ with the vertical direction, where the angle θ is greater than 0° and less than 90°. Because the channel 300 is located at the exhaust port 106 of the preheating ring 200 corresponding to the processing chamber, it is close to the negative pressure source (i.e., the pump). Furthermore, the angle between the channel 300 and the vertical direction reduces the path distance of the purge gas G2 towards the negative pressure source. Therefore, the purge gas G2 tends to flow from the channel 300 to the exhaust port 106, reducing the pressure difference between the upper and lower chambers and preventing the purge gas G2 from surging from the gap to the vicinity of the substrate edge.

[0040] The channel 300 includes a first port and a second port, the first port being located at one end of the channel and the second port being located at the other end of the channel. Optionally, the first port is located on the upper surface 201 or the outer surface 204 (as shown in the image). Figure 2-3 As shown, the second port is located on the lower surface 203, and is positioned close to the inner surface 202; when the first port is located on the upper surface 201, it is positioned close to the outer surface; when the first port is located on the outer surface 204, it is positioned close to the upper surface. Positioning the second port close to the inner surface facilitates the entry of purge gas into the channel 300, thereby suppressing the overflow of purge gas G2 from the gap. The position of the first port is advantageous for proximity to the negative pressure source.

[0041] Figure 4 A cross-sectional view of the preheating ring and the base is shown. Optionally, the cross-sectional area of ​​the second port is larger than that of the first port. This is more conducive to the discharge of purge gas G2 from channel 300 to exhaust port 106.

[0042] Furthermore, the annular body also includes a flange 400, which is disposed on the inner surface of the annular body and located at the exhaust port position of the preheating ring corresponding to the processing chamber, such as... Figure 5As shown, flange 400 can reduce the gap and further suppress the overflow of purge gas G2 from the gap.

[0043] Optionally, there is at least one channel 300, and the cross-section of the channel 300 is a circular hole, such as... Figure 6 As shown. Further optionally, the cross-section of the channel 300 is an oblong hole, as shown. Figure 7 As shown, there can be one or more waist holes, such as three.

[0044] Optional, by Figure 8 As shown, the cross-sectional area of ​​the first port of different channels 300 varies. The first port cross-sectional area of ​​the channel closest to the exhaust port 106 is the smallest, and the first port cross-sectional area gradually increases with distance from the exhaust port 106. When there is only one channel 300, the first port cross-sectional area is not a regular shape, but rather resembles a "bow tie," narrow in the middle and widening towards both ends. This variation in cross-sectional area facilitates the uniform extraction of the purge gas G2.

[0045] Continue to refer to Figure 8 Optionally, the flange 400 is only provided at the position of the exhaust port 106 corresponding to the processing chamber of the preheating ring. Regarding the formation of the flange 400: it can be a step of uniform width (not shown in the figure), or it can be a flange with an inner diameter at the flange position that is larger than the inner diameter at other positions of the preheating ring (e.g., Figure 8 (As shown). Optionally, the flange 400 can be provided on the entire inner surface of the preheating ring (not shown in the figure).

[0046] Optionally, the preheating ring 200 is made of at least one of quartz, silicon carbide, graphite, ceramic, and sapphire. Because the material of the preheating ring is relatively brittle, directly creating inclined channels 300 on the preheating ring can damage it, especially at the corners. Therefore, as... Figure 9 As shown, the annular body includes an upper ring body 210 and a lower ring body 220 located below the upper ring body 210. The channel 300 includes an upper channel 310 and a lower channel 320. The first port of the channel is located on the outer surface 204 of the preheating ring, and the second port of the channel is located on the lower surface 203 of the preheating ring. Specifically, the upper channel 310 is formed by a groove on the lower surface of the upper ring body 210, and the lower channel 320 is formed by penetrating the upper and lower surfaces of the lower ring body. The lower channel 320 is located near the inner surface. The upper ring body 210 is annular, and the inner diameter of the lower ring body 220 at the exhaust port position corresponding to the processing chamber of the preheating ring is larger than the inner diameter at other positions of the lower ring body, thereby forming the flange 400 (the formed flange is as shown in the image). Figure 8As shown in the figure, optionally, the flange 400 is a step with a uniform width (not shown in the figure). Further optionally, the flange 400 can be disposed on the entire inner surface of the preheating ring (not shown in the figure), that is, the inner diameter of the inner surface of the lower ring 220 is smaller than the inner diameter of the inner surface of the upper ring 210. The arrangement of the upper channel 310 and the lower channel 320 effectively prevents damage to the preheating ring.

[0047] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0048] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A preheating ring for use in an epitaxial apparatus, the epitaxial apparatus comprising a processing chamber, a base, and a preheating ring, the base being disposed within the processing chamber for supporting a substrate; the preheating ring being disposed around the base; The processing chamber includes an air inlet and an air outlet. The air inlet is used to introduce process gases to process the substrate, and the air outlet is used to discharge the processed gases from the processing chamber. The chamber is characterized by including: A ring-shaped body, the ring-shaped body including an upper surface, a lower surface opposite to the upper surface, an inner surface, and an outer surface opposite to the inner surface; The annular body further includes a channel, which is located at the exhaust port position of the preheating ring corresponding to the processing chamber. The channel penetrates the annular body and forms an angle greater than zero with the vertical direction. The channel includes a first port and a second port. The first port is located on the upper surface or the outer surface, and the second port is located on the lower surface, with the second port positioned close to the inner surface. The first port is located at one end of the channel, and the second port is located at the other end of the channel. The cross-sectional area of ​​the second port is larger than that of the first port. The annular body includes an upper ring body and a lower ring body located below the upper ring body. The inner surface of the lower ring body is provided with a flange, which is used to reduce the gap between the base and the preheating ring. The channel includes an upper channel and a lower channel, the upper channel being formed in the upper ring body and the lower channel being formed in the lower ring body.

2. The preheating ring as described in claim 1, characterized in that, The flange is placed on the inner surface of the annular body and is located at the exhaust port position of the preheating ring corresponding to the processing chamber.

3. The preheating ring as described in claim 1, characterized in that, The upper channel is formed by a groove on the lower surface of the upper ring body, and the lower channel is formed by penetrating the upper and lower surfaces of the lower ring body.

4. The preheating ring as described in claim 3, characterized in that, The upper ring is annular, and the inner diameter of the lower ring at the exhaust port position of the preheating ring corresponding to the processing chamber is larger than the inner diameter at other positions of the lower ring, thereby forming the flange.

5. The preheating ring as described in any one of claims 1-2, characterized in that, There is at least one channel.

6. The preheating ring as described in claim 5, characterized in that, The cross-section of the channel is a circular hole.

7. The preheating ring as described in claim 5, characterized in that, The cross-section of the channel is an oblong hole.

8. The preheating ring as described in claim 5, characterized in that, The cross-sectional area of ​​the first port of the different channels varies, and the first port of the channel closest to the exhaust port has the smallest cross-sectional area.

9. The preheating ring as described in any one of claims 1-2, characterized in that, The preheating ring is made of at least one of the following materials: quartz, silicon carbide, graphite, ceramic, and sapphire.

10. An epitaxial device, characterized in that, include: The processing chamber includes an air inlet and an air outlet. The air inlet is used to introduce process gases to process the substrate, and the air outlet is used to discharge the process gases after processing from the processing chamber. A base, placed within the processing chamber, for supporting the substrate; The preheating ring as described in any one of claims 1-9, wherein the preheating ring is disposed around the base.

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