An organic light-emitting transistor, a manufacturing method, a display device, and an illuminating apparatus

Abstract

The application discloses an organic light-emitting transistor, a manufacturing method, a display device and an illuminating device. The organic light-emitting transistor of one embodiment comprises a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode arranged on a substrate, wherein the gate insulating layer comprises an elastomer polymer which deforms to increase the capacitance of the organic light-emitting transistor in response to external pressure. The organic light-emitting transistor provided by the embodiment of the application deforms in response to external pressure by the gate insulating layer comprising the elastomer polymer and increases the capacitance of the organic light-emitting transistor, thereby increasing the current flowing through the organic light-emitting transistor and increasing the luminous brightness of the organic light-emitting material in the organic light-emitting transistor. When the organic light-emitting transistor of the embodiment of the application is applied to the illuminating device, the illuminating brightness can be increased by applying pressure to the illuminating device, and the application prospect is wide.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of display technology, in particular to an organic light-emitting transistor, a manufacturing method, a display device and an illuminating apparatus. BACKGROUND

[0002] An organic light-emitting transistor (OLET) is a miniaturized optoelectronic integrated device integrating the functions of both organic field-effect transistor (OFET) and organic light-emitting diode (OLED) in one device. It has the functions of switching and signal amplification of OFET, and the functions of light-emitting display and illumination of OLED. Compared with the current three-dimensional integrated display device driven by a transistor backplane, it is simpler and more efficient to integrate, and has the characteristics of large aperture ratio. Therefore, the unique device structure of OLET, which is electric field driven and integrated, has been considered as the best element for realizing the next generation of flexible display technology characterized by integration, high resolution, energy saving and multi-function. SUMMARY

[0003] To solve at least one of the above problems, the first aspect of the present application provides an organic light-emitting transistor comprising a gate, a gate insulating layer, an active layer, a source and a drain disposed on a substrate, wherein

[0004] The gate insulating layer comprises an elastomer polymer that deforms to increase the capacitance of the organic light-emitting transistor in response to external pressure.

[0005] Further, the elastomer polymer is one of polyurethane, silicone, silicone rubber, polystyrene-butadiene-polystyrene and EPDM polymer.

[0006] Further, the elastomer polymer is EPDM polymer doped with carbon black nanoparticles, and the doping ratio of the carbon black nanoparticles is greater than or equal to 1% and less than or equal to 10%.

[0007] Further, the elastomer polymer is polyurethane doped with titanium dioxide particles, and the doping ratio of the titanium dioxide particles is greater than or equal to 5% and less than or equal to 10%.

[0008] Further, the active layer comprises an organic semiconductor material layer and an organic light-emitting layer,

[0009] The organic light-emitting transistor comprises a gate, a gate insulating layer, a source, an organic semiconductor material layer, an organic light-emitting layer and a drain sequentially stacked on the substrate.

[0010] Further, the active layer comprises an organic semiconductor material layer and an organic light-emitting layer,

[0011] The organic light-emitting transistor comprises a gate electrode, a gate insulating layer, a drain electrode, an organic semiconductor material layer, an organic light-emitting layer and a source electrode which are sequentially stacked on the substrate.

[0012] Further,

[0013] The substrate is a flexible or rigid substrate;

[0014] And / or

[0015] The gate electrode is made of aluminum or gold;

[0016] And / or

[0017] The active layer comprises an organic semiconductor material layer and an organic light-emitting layer, and the organic light-emitting layer comprises a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, an electron injection layer and a cathode.

[0018] The second aspect of the present application provides a display device comprising the organic light-emitting transistor according to the first aspect.

[0019] The third aspect of the present application provides a lighting device comprising the organic light-emitting transistor according to the first aspect, which increases the lighting brightness in response to the received external pressure.

[0020] The fourth aspect of the present application provides a manufacturing method of the organic light-emitting transistor according to the first aspect, comprising:

[0021] Forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein the gate insulating layer comprises an elastomer polymer which deforms in response to external pressure to increase the capacitance of the organic light-emitting transistor.

[0022] Further, the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, and the forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate further comprises:

[0023] Forming the gate electrode on the substrate;

[0024] Forming the gate insulating layer on the gate electrode;

[0025] Forming the source electrode on the gate insulating layer;

[0026] Forming the organic semiconductor material layer on the source electrode;

[0027] Forming the organic light-emitting layer on the organic semiconductor material layer;

[0028] forming a drain electrode on the organic light-emitting layer.

[0029] Further, the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, and the forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate further comprises:

[0030] forming a gate electrode on the substrate;

[0031] forming a gate insulating layer on the gate electrode;

[0032] forming a drain electrode on the gate insulating layer;

[0033] forming an organic semiconductor material layer on the drain electrode and the exposed gate insulating layer;

[0034] forming an organic light-emitting layer on the organic semiconductor material layer;

[0035] forming a source electrode on the organic light-emitting layer.

[0036] The present application has the following advantages:

[0037] The present application aims at the current problems, and provides an organic light-emitting transistor, a manufacturing method, a display device and an illuminating device. The gate insulating layer comprises an elastomer polymer, and deforms in response to external pressure and increases the capacitance of the organic light-emitting transistor, thereby increasing the current flowing through the organic light-emitting transistor and increasing the luminous brightness of the organic light-emitting material in the organic light-emitting transistor. In particular, when the organic light-emitting transistor of the present application is applied to the illuminating device, the luminous brightness of the illuminating device can be increased by applying pressure to the illuminating device, and the present application has a wide application prospect. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the following embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0039] Figure 1 a structure schematic diagram of the organic light-emitting transistor according to an embodiment of the present application is shown;

[0040] Figure 2 a deformation-capacitance change schematic diagram of the EPDM polymer doped with carbon black nanoparticles according to an embodiment of the present application is shown;

[0041] Figure 3 a structure schematic diagram of the organic light-emitting transistor according to another embodiment of the present application is shown;

[0042] Figure 4 A flow chart showing a method of fabricating an organic light-emitting transistor according to an embodiment of the present application is shown in FIG. 1.

[0043] Figure 5 A flow chart showing a method of fabricating an organic light-emitting transistor according to another embodiment of the present application is shown in FIG. 2. DETAILED DESCRIPTION

[0044] In order to more clearly illustrate the present application, the following detailed description is provided with reference to the following drawings, wherein like elements are referred to with like reference numerals. It should be understood that the detailed description is merely illustrative and is not intended to limit the scope of the present application.

[0045] It should be noted that the terms "on", "formed on" and "disposed on" as used herein can mean that a layer is formed or disposed directly on another layer, or that a layer is formed or disposed indirectly on another layer, i.e., there are other layers between the two layers. In this document, the term "formed in the same layer" means that two layers, components, members, elements or parts can be formed by the same patterning process, and the two layers, components, members, elements or parts are generally formed of the same material, unless otherwise specified. In this document, the expression "patterning process" generally includes the steps of coating, exposing, developing, etching, stripping of photoresist, etc., unless otherwise specified. The expression "one patterning process" means a process of forming a patterned layer, component, member, etc. using one mask plate.

[0046] To further increase the light-emitting brightness of the organic light-emitting transistor, as shown in FIG. 3, an embodiment of the present application provides an organic light-emitting transistor including a gate, a gate insulating layer, an active layer, a source and a drain disposed on a substrate, wherein the gate insulating layer includes an elastic polymer that deforms in response to external pressure to increase the capacitance of the organic light-emitting transistor. Figure 1

[0047] ​In the embodiment, the organic light-emitting transistor is disposed on a substrate 10, which can be a flexible substrate such as a synthetic resin such as polyethylene terephthalate (PET), polyethersulfone (PES), polycarbonate (PC), or a rigid substrate such as glass or a silicon wafer. The organic light-emitting transistor includes a gate electrode 20, a gate insulating layer 30, a source electrode 40, an active layer 50, and a drain electrode 60 disposed on the substrate 10, wherein the active layer includes an organic semiconductor material layer and an organic light-emitting layer including a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, an electron injection layer, and a cathode. The organic light-emitting transistor integrates both an organic field effect transistor (OFET) and an organic light-emitting diode (OLED) in the same device through the organic light-emitting layer disposed in the active layer.

[0048] In the embodiment, the gate insulating layer 30 includes an elastomeric polymer, which is one of polyurethane, silicone, silicone rubber, polystyrene-butadiene-polystyrene, or an EPDM (ethylene-propylene-diene monomer) polymer. The gate insulating layer including the elastomeric polymer deforms in response to an external pressure to increase the capacitance of the organic light-emitting transistor. Specifically, the organic light-emitting transistor includes a parallel-plate capacitor formed by the source electrode, the gate electrode, and the gate insulating layer between the source electrode and the gate electrode, wherein the gate insulating layer is a dielectric layer of the parallel-plate capacitor. When the organic light-emitting transistor is subjected to an external pressure, the gate insulating layer deforms in response to the external pressure, i.e., the dielectric layer of the capacitance of the organic light-emitting transistor deforms, thereby increasing the capacitance of the organic light-emitting transistor.

[0049] According to the formula of the organic light-emitting transistor, the current flowing through the organic light-emitting transistor is:

[0050] Ids = W / 2LCμ(Vg-Vth) 2

[0051] wherein W is the channel width of the organic light-emitting transistor, L is the channel length of the organic light-emitting transistor, μ is the channel mobility of the organic light-emitting transistor, C is the capacitance of the organic light-emitting transistor, Vg is the gate voltage of the organic light-emitting transistor, and Vth is the threshold voltage of the organic light-emitting transistor.

[0052] According to the above formula, the gate insulating layer including the elastomeric polymer can deform in response to an external pressure to increase the capacitance of the organic light-emitting transistor, thereby increasing the current flowing through the organic light-emitting transistor and increasing the light-emitting brightness of the organic light-emitting material in the organic light-emitting transistor.

[0053] In an alternative embodiment, the elastomer polymer is an EPDM polymer doped with carbon black nanoparticles, the doping ratio of the carbon black nanoparticles being greater than or equal to 1% and less than or equal to 10%.

[0054] In this embodiment, when the elastomer polymer is an EPDM polymer, the capacitance of the gate insulating layer when deformed in response to external pressure can be further increased by doping with carbon black nanoparticles, i.e. the current of the organic light-emitting transistor is increased. When the doping ratio, e.g. the doping mass ratio, of the carbon black nanoparticles in the EPDM polymer is greater than or equal to 1% and less than or equal to 10%, the current of the organic light-emitting transistor is significantly increased, in particular, as shown in Figure 2

[0055] In an alternative embodiment, the elastomer polymer is a polyurethane doped with titanium dioxide particles, the doping ratio of the titanium dioxide particles being greater than or equal to 5% and less than or equal to 10%.

[0056] In this embodiment, when the elastomer polymer is a polyurethane, the capacitance of the gate insulating layer when deformed in response to external pressure can also be further increased by doping with titanium dioxide particles, e.g. the current of the organic light-emitting transistor can be effectively increased by doping with titanium dioxide particles having a doping mass ratio greater than or equal to 5% and less than or equal to 10% in the polyurethane, thereby further improving the luminous brightness of the organic light-emitting transistor.

[0057] In a specific example, an organic light-emitting transistor as shown in Figure 1 is fabricated, which includes a gate, a gate insulating layer, a source, an organic semiconductor material layer, an organic light-emitting layer and a drain which are sequentially stacked on the substrate, and specifically includes the following steps.

[0058] First, the gate is formed on the substrate.

[0059] ​In the embodiment, the substrate is a flexible substrate or a rigid substrate. The flexible substrate is made of synthetic resin such as polyethylene terephthalate (PET), polyethersulfone (PES), polycarbonate (PC), etc. The rigid substrate is made of glass or silicon wafer.

[0060] In the manufacturing process, the substrate is first cleaned, for example, by using ultraviolet light or ozone, and then the gate material is vacuum-deposited on the substrate and patterned to form the gate. In the embodiment, the gate material is aluminum or gold.

[0061] In the second step, the gate insulating layer is formed on the gate.

[0062] In the embodiment, the gate insulating layer is formed on the gate by printing. The gate insulating layer includes an elastomeric polymer, which is one of polyurethane, silicone, silicone rubber, polystyrene-butadiene-polystyrene, and EPDM polymer. The gate insulating layer including the elastomeric polymer is deformed under external pressure and increases the capacitance of the organic light-emitting transistor. According to the formula of the organic light-emitting transistor, increasing the capacitance of the organic light-emitting transistor can increase the current flowing through the organic light-emitting transistor and increase the luminous brightness of the organic light-emitting material in the organic light-emitting transistor.

[0063] In the third step, the source is formed on the gate insulating layer.

[0064] In the embodiment, the source is formed on the gate insulating layer by vacuum-depositing the source material and patterning. The source material is aluminum, gold, or molybdenum.

[0065] In the fourth step, the organic semiconductor material layer is formed on the source.

[0066] In the embodiment, the organic semiconductor material layer is formed on the source by evaporating pentacene.

[0067] In the fifth step, the organic light-emitting layer is formed on the organic semiconductor material layer, including the hole injection layer, the hole transport layer, the light-emitting material layer, the electron transport layer, the electron injection layer, and the cathode.

[0068] In the embodiment, the films of the organic light-emitting layer are sequentially formed on the organic semiconductor material layer by evaporation.

[0069] In the sixth step, the drain is formed on the organic light-emitting layer.

[0070] In the embodiment, the drain is formed on the organic light-emitting layer by vacuum-depositing the drain material and patterning. The drain material is magnesium, silver, or aluminum with a relatively thin thickness and light transmittance.

[0071] Thus, it was formed as follows Figure 1 The organic light-emitting transistor (OLED) shown has a parallel-plate capacitor formed by the source, gate, and gate insulating layer between them. When a positive voltage is applied to the gate, a large number of electrons are induced at the source surface. Simultaneously, a positive voltage is applied to the drain, attracting electrons that tunnel into the organic material and recombine with holes to emit light. Specifically, taking a p-type OLED as an example, when a positive voltage is applied to the drain, no light is emitted because there is only one type of charge carrier (holes). When a positive voltage is applied to the gate, the gate insulating layer acts as a capacitor unit, and under the influence of the gate electric field, a large number of electrons are induced at the interface between the source and the gate insulating layer, accumulating at the interface between the source and the organic semiconductor. Attracted by the drain voltage, these electrons tunnel into the organic material with a certain probability and recombine with holes to emit light.

[0072] The organic light-emitting transistor (OLED) fabricated in this embodiment uses a gate insulating layer comprising an elastomeric polymer. When deformed under external pressure, the capacitance of the OLED increases, thereby increasing the current flowing through the OLED and increasing the luminous brightness of the organic light-emitting material in the OLED.

[0073] In an optional embodiment, such as Figure 3 As shown, the active layer includes an organic semiconductor material layer 520 and an organic light-emitting layer 510. The organic light-emitting transistor includes a gate 200, a gate insulating layer 300, a drain 600, an organic semiconductor material layer 520, an organic light-emitting layer 510, and a source 400, which are sequentially stacked on the substrate 100.

[0074] Compared to Figure 1 The organic light-emitting transistor shown in this embodiment is another method to realize a bipolar field-effect transistor through a semiconductor heterojunction structure of an organic semiconductor material layer. Specifically, after applying voltage to the drain and gate respectively, holes are induced at the interface of the organic semiconductor material layer, and recombine with electrons injected from the cathode at the interface of the light-emitting material layer of the organic light-emitting layer to emit light.

[0075] In this embodiment, the gate insulating layer, which includes an elastomeric polymer, can increase the capacitance of the organic light-emitting transistor (OLED) when deformed by external pressure, thereby increasing the current flowing through the OLED and increasing the luminous brightness of the organic light-emitting material in the OLED.

[0076] In one specific embodiment, to produce as Figure 3 The following steps are used as an example of an organic light-emitting transistor:

[0077] Firstly, a gate 200 is formed on the substrate 100.

[0078] In the embodiment, the substrate is a flexible substrate or a rigid substrate. When the substrate is a flexible substrate, it is made of a synthetic resin such as polyethylene terephthalate (PET), polyethersulfone (PES), polycarbonate (PC), etc. When the substrate is a rigid substrate, it is made of glass or silicon wafer.

[0079] In the manufacturing process, the substrate is cleaned first, for example, by using ultraviolet light or ozone, and then the gate material is vacuum-deposited on the substrate and patterned to form the gate. In the embodiment, the gate material is aluminum or gold.

[0080] Secondly, a gate insulating layer 300 is formed on the gate 200.

[0081] In the embodiment, the gate insulating layer is formed on the gate by printing. The gate insulating layer includes an elastomeric polymer, which is one of polyurethane, silicone, silicone rubber, polystyrene-butadiene-polystyrene, and EPDM polymer. The gate insulating layer including the elastomeric polymer is deformed under external pressure and increases the capacitance of the organic light-emitting transistor. According to the formula of the organic light-emitting transistor, increasing the capacitance of the organic light-emitting transistor can increase the current flowing through the organic light-emitting transistor and increase the luminous brightness of the organic light-emitting material in the organic light-emitting transistor.

[0082] Thirdly, a drain 600 is formed on the gate insulating layer 300.

[0083] In the embodiment, the drain material is thin and light-transmissive magnesium, silver, or aluminum, which is vacuum-deposited on the gate insulating layer and patterned to form the drain.

[0084] Fourthly, an organic semiconductor material layer 520 is formed on the drain 600 and the exposed gate insulating layer 300.

[0085] In the embodiment, the organic semiconductor material layer is formed by evaporating and pentacene on the drain and the exposed gate insulating layer.

[0086] Fifthly, an organic light-emitting layer 510 is formed on the organic semiconductor material layer 520, including a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, and an electron injection layer.

[0087] In the embodiment, each film layer of the organic light-emitting layer is formed on the organic semiconductor material layer by evaporation in sequence.

[0088] In the sixth step, a source electrode 400 is formed on the organic light emitting layer 510.

[0089] In this embodiment, the source electrode is formed by vacuum deposition of a source electrode material, such as aluminum, gold or molybdenum, on the organic light emitting layer and patterning. In this embodiment, the source electrode is multiplexed as the cathode of the organic light emitting layer.

[0090] Thus far, an organic light emitting transistor as shown in Figure 3 is formed. This embodiment is another method of realizing a bipolar field effect transistor through a semiconductor heterojunction structure of an organic semiconductor material layer. Specifically, after a voltage is applied to the drain electrode and the gate electrode, holes are induced on the interface of the organic semiconductor material layer, and the holes recombine with the electrons injected from the cathode at the interface of the light emitting material layer of the organic light emitting layer to emit light. In this embodiment, the gate insulating layer includes an elastomer polymer, which deforms in response to external pressure to increase the capacitance of the organic light emitting transistor, thereby increasing the current flowing through the organic light emitting transistor and increasing the light emitting brightness of the organic light emitting material in the organic light emitting transistor.

[0091] Corresponding to the organic light emitting transistor provided in the above embodiments, one embodiment of the present application further provides a manufacturing method of the organic light emitting transistor, which comprises: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein the gate insulating layer includes an elastomer polymer, which deforms in response to external pressure to increase the capacitance of the organic light emitting transistor.

[0092] In this embodiment, the gate insulating layer includes an elastomer polymer, which deforms in response to external pressure to increase the capacitance of the organic light emitting transistor, thereby increasing the current flowing through the organic light emitting transistor and increasing the light emitting brightness of the organic light emitting material in the organic light emitting transistor. Since the manufacturing method provided in this embodiment corresponds to the organic light emitting transistor provided in the above several embodiments, the previous embodiments are also applicable to the manufacturing method provided in this embodiment, which will not be described in detail in this embodiment.

[0093] In an optional embodiment, as shown in Figure 4 , the active layer includes an organic semiconductor material layer and an organic light emitting layer, and the forming of the gate electrode, the gate insulating layer, the active layer, the source electrode and the drain electrode on the substrate further comprises: forming the gate electrode on the substrate; forming the gate insulating layer on the gate electrode; forming the source electrode on the gate insulating layer; forming the organic semiconductor material layer on the source electrode; forming the organic light emitting layer on the organic semiconductor material layer; and forming the drain electrode on the organic light emitting layer.

[0094] The organic light-emitting transistor formed by the embodiment includes a parallel-plate capacitor formed by the source, the gate and the gate insulating layer between the source and the gate. When the gate is connected to a positive voltage, a large number of electrons are induced on the surface of the source. Meanwhile, the drain is connected to a positive voltage to attract the electrons, which results in the electrons tunneling into the organic material and recombining with the holes in the organic material to emit light. Meanwhile, the gate insulating layer including the elastomer polymer deforms in response to external pressure and increases the capacitance of the organic light-emitting transistor, thereby increasing the current flowing through the organic light-emitting transistor and the luminance of the organic light-emitting material in the organic light-emitting transistor.

[0095] In another alternative embodiment, as shown in FIG. 6, the active layer includes an organic semiconductor material layer and an organic light-emitting layer, and the forming the gate, the gate insulating layer, the active layer, the source and the drain on the substrate further includes: forming the gate on the substrate; forming the gate insulating layer on the gate; forming the drain on the gate insulating layer; forming the organic semiconductor material layer on the drain and the exposed gate insulating layer; forming the organic light-emitting layer on the organic semiconductor material layer; and forming the source on the organic light-emitting layer. Figure 5

[0096] The organic light-emitting transistor formed by the embodiment is another method of realizing a bipolar field effect transistor through a semiconductor heterojunction structure of an organic semiconductor material layer. Specifically, after the drain and the gate are loaded with voltages, holes are induced on the interface of the organic semiconductor material layer, recombine with the electrons injected from the cathode at the interface of the light-emitting material layer of the organic light-emitting layer and emit light. The gate insulating layer including the elastomer polymer deforms in response to external pressure and increases the capacitance of the organic light-emitting transistor, thereby increasing the current flowing through the organic light-emitting transistor and the luminance of the organic light-emitting material in the organic light-emitting transistor.

[0097] Based on the above organic light-emitting transistor, another embodiment of the present application provides a display device including the above organic light-emitting transistor. The display device can be a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame or a navigator or any product or component having a display function.

[0098] Based on the above organic light-emitting transistor, another embodiment of the present application provides a lighting device including the above organic light-emitting transistor, which increases the lighting brightness in response to the received external pressure.

[0099] ​The lighting device provided by the embodiment, for example, a floor lamp installed on the ground, normally emits low brightness, when a user passes by, the organic light emitting transistor in the floor lamp responds to the gravity of the user or the object, the gate insulating layer of the organic light emitting transistor deforms to increase the capacitance of the organic light emitting transistor, and then the current flowing through the organic light emitting transistor is increased, so that the brightness of the organic light emitting transistor is increased, and the lighting brightness of the floor lamp is effectively increased.

[0100] The lighting device provided by the embodiment, for example, a floor lamp installed on the ground, normally emits low brightness, when a user passes by, the organic light emitting transistor in the floor lamp responds to the gravity of the user or the object, the gate insulating layer of the organic light emitting transistor deforms to increase the capacitance of the organic light emitting transistor, and then the current flowing through the organic light emitting transistor is increased, so that the brightness of the organic light emitting transistor is increased, and the lighting brightness of the floor lamp is effectively increased.

[0101] The present application aims at the existing problems, and formulates an organic light emitting transistor, a manufacturing method, a display device and a lighting device, and through the gate insulating layer including an elastomer polymer, deformation is caused in response to external pressure and the capacitance of the organic light emitting transistor is increased, so that the current flowing through the organic light emitting transistor is increased, and the light emitting brightness of the organic light emitting material in the organic light emitting transistor can be increased. In particular, when the organic light emitting transistor of the embodiment of the present application is applied to the lighting device, the lighting brightness can be increased by applying pressure to the lighting device, and has wide application prospects.

[0102] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation manners of the present application. For those skilled in the art, on the basis of the above description, other different forms of changes or variations can be made, and it is impossible to enumerate all the implementation manners here. Any changes or variations derived from the technical solutions of the present application still fall within the protection scope of the present application.

Claims

1. An organic light-emitting transistor, characterized by comprising: comprising a gate, a gate insulating layer, an active layer, a source and a drain disposed on a substrate, wherein the gate insulating layer comprises an elastomer polymer that deforms in response to external pressure to increase the capacitance of the organic light-emitting transistor; the elastomer polymer is an EPDM polymer doped with carbon black nanoparticles at a doping ratio of greater than or equal to 1% and less than or equal to 10%; or the elastomer polymer is a polyurethane doped with titanium dioxide particles at a doping ratio of greater than or equal to 5% and less than or equal to 10%. the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, 2. The organic light-emitting transistor according to claim 1, wherein the organic light-emitting transistor comprises a gate, a gate insulating layer, a source, an organic semiconductor material layer, an organic light-emitting layer and a drain disposed in sequence on the substrate. the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, 3. The organic light-emitting transistor according to claim 1, wherein the organic light-emitting transistor comprises a gate, a gate insulating layer, a drain, an organic semiconductor material layer, an organic light-emitting layer and a source disposed in sequence on the substrate.

4. The organic light-emitting transistor of claim 1, wherein the substrate is a flexible or rigid substrate; and / or the gate is aluminum or gold; and / or the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, the organic light-emitting layer comprising a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, an electron injection layer and a cathode. comprising the organic light-emitting transistor of any one of claims 1-4.

5. A display device, characterized by comprising the organic light-emitting transistor of any one of claims 1-4, which increases the luminance in response to the received external pressure.

6. An illumination device, characterized by comprising:

7. A method of fabricating an organic light-emitting transistor according to any one of claims 1 to 4, characterized by, forming a gate, a gate insulating layer, an active layer, a source and a drain on a substrate, wherein the gate insulating layer comprises an elastomer polymer that deforms in response to external pressure to increase the capacitance of the organic light-emitting transistor. the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, the forming a gate, a gate insulating layer, an active layer, a source and a drain on a substrate further comprising:

8. The method of manufacturing according to claim 7, wherein, forming a gate on the substrate; forming a gate insulating layer on the gate; forming a source on the gate insulating layer; forming an organic semiconductor material layer on the source; forming an organic light-emitting layer on the organic semiconductor material layer; forming a drain on the organic light-emitting layer. the active layer comprises an organic semiconductor material layer and an organic light-emitting layer, the forming a gate, a gate insulating layer, an active layer, a source and a drain on a substrate further comprising:

9. The method of manufacturing according to claim 7, wherein, forming a gate on the substrate; forming a gate insulating layer on the gate; forming a drain on the gate insulating layer; forming an organic semiconductor material layer on the drain and the exposed gate insulating layer; forming an organic light-emitting layer on the organic semiconductor material layer; forming a source on the organic light-emitting layer. ​

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