A field-programmable topology control system

By using a field-programmable topological state control system, a multiphysics field control array and a digital control unit are used to achieve flexible and real-time control of topological states. This solves the problems of flexibility and material sensitivity in topological state control in existing technologies, and realizes highly flexible and stable topological phase transitions and quantum computing operations.

CN115563926BActive Publication Date: 2025-10-28NAT UNIV OF DEFENSE TECH
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Patent Information

Application Number
CN202211255962.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-10-13
Publication Date
2025-10-28
Estimated Expiration
2042-10-13

AI Technical Summary

Technical Problem

Existing technologies make it difficult to flexibly control topological states through external means, and traditional methods are highly sensitive to materials, making them difficult to apply in practical devices and lacking programmable control capabilities.

Method used

Design a field-programmable topology state control system. Through a multiphysics control array and a digital control unit, the working mode and state of the multiphysics control unit can be independently controlled in real time. The topology state can be controlled by combining physical fields such as electric field and magnetic field, and local control can be achieved by using spin devices.

Benefits of technology

It achieves flexible, real-time programmable control of topological states, eliminates dependence on material composition, has high reconfigurability, supports topological phase transitions and quantum computing operations, and possesses high flexibility and stability.

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Abstract

A field-programmable topological state manipulation system includes a multiphysics control array, a digital control unit, a state manipulation material, and a topological state generation and manipulation unit. The multiphysics control array is selected as either an electric field mode or a magnetic field mode by the digital control unit. Each unit of the multiphysics control array selects an independent control unit for its operating mode. Based on the required electric or magnetic field configuration generated by the digital control unit, a target distribution of physical fields is generated for topological state manipulation, causing changes in the physical properties of the state manipulation material, thus endowing the material with topological properties. Real-time control of the multiphysics control array, along with changes in the spatially distributed physical fields, controls the topological state, i.e., topological state manipulation. This invention, based on a field-programmable topological state manipulation array method, provides an effective approach for realizing material property manipulation, topological phase transitions, topological quantum computing operations, and quantum gating braiding protocols.
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Description

Technical Field

[0001] This invention relates to a method and design for controlling topological states through external means, belonging to the fields of spintronics and quantum computing. Background Technology

[0002] Topological band insulators and half-metals possess unique electronic band structures, and the protected boundary states they generate are crucial for advancing the development of high-performance electronic devices and building robust quantum computing systems. However, the topological states inherent in most materials are difficult to manipulate externally and thus hard to utilize in practice. The main difficulty lies in the fact that the micro- and nano-fabrication processes of topological materials often introduce fatal defects. Most currently tunable topological materials are highly sensitive to the environment (oxygen, moisture, and pressure, etc.), which are precisely the variables that are difficult to control in practical device fabrication. Furthermore, some topological materials are difficult to manipulate using traditional gate electrodes, such as systems based on metallic superconductors. Various macroscopic quantum numbers, or topological invariants, exist to describe the structure of electronic wave functions under different dimensions and symmetries. Materials with non-zero topological invariants are called topological materials. Topological materials possess novel surface states. For example, the surface states of two-dimensional topological insulators are called helical surface states. When electrons are in such states, they are not scattered by impurities during their propagation; therefore, in principle, this characteristic can be used to achieve energy-free transmission. For example, in superconducting materials with topological properties (referred to as topological superconductors), the boundary states of such materials are called "Majorana zero modes".

[0003] To overcome these challenges, existing topological qubit devices and methods based on topological semimetal nanostructures combine materials to form topological heterojunction composite systems, generating new topological phases. These include electron spin filters constructed from topological insulators, which synthesize new topological isomers by stacking different materials into superlattice structures, and methods that directly define planar superlattices using micro / nano fabrication techniques to customize the topological phases of artificial crystal structures. However, these methods rely heavily on material properties for generating and manipulating topological states, such as spin-orbit coupling, superconductivity, and inhomogeneous lattice coupling. They cannot generate and control topological states for more general materials. Furthermore, these methods suffer from limited and inflexible control mechanisms, lacking research on the specific implementation of control systems. Programmable control capability is fundamental to computing technology. Therefore, proposing programmable topological state control schemes for more general materials is essential. Summary of the Invention

[0004] Objective of this invention: To achieve field-programmable control of topological states, this invention provides a field-programmable topological state manipulation system. Control units arranged in an array on top of a material substrate with manipulated states are used to independently and in real-time regulate the operating mode and state of the multiphysics control units through digital control, thereby manipulating the material to possess topological properties and controlling its topological states.

[0005] The technical solution of this invention: To achieve the above objectives, the technical solution adopted by this invention is a field-programmable topology state control system.

[0006] It includes a multiphysics control array, a digital control unit, a matter-modulating material, and a topological state generation and control unit. The multiphysics control array is selected as either an electric field mode or a magnetic field mode by the digital control unit. Each unit of the multiphysics control array selects an independent control unit for its working mode. Based on the required electric or magnetic field configuration generated by the digital control unit, a target distribution of physical fields is generated to perform topological matter-modulating, causing changes in the physical properties of the matter-modulating material, thus endowing the matter-modulating material with topological properties. The multiphysics control array is controlled in real time, and the spatially distributed physical fields change accordingly, thus controlling the topological state, i.e., topological matter-modulating.

[0007] Each multiphysics control unit in the multiphysics control array is a micro-spin device: a spin-transfer torque device (STT) or a spin-orbit torque device (SOT) to achieve localized control of electric and magnetic fields;

[0008] A multiphysics control array, in which a multiphysics control unit is a miniature spin device, can be a spin-transfer torque device (STT), a spin-orbit torque device (SOT), or a voltage-controlled magnetic anisotropy device (VCMA), or any device that can realize an electromagnetic field, in order to achieve localized control of electric and magnetic fields.

[0009] A digital control unit is an inverter, which has a control terminal, an input terminal, and an output terminal;

[0010] The generation and manipulation of topological states in materials for state control includes field-programmable topological state control, enhanced cross-Andreev reflection, manipulation of topological phase transitions, topological weaving, and topological quantum transport.

[0011] The digital control unit (DCU) can be an inverter, with control, input, and output terminals. When the digitally controlled voltage (Vctrl) applied to the DCU control terminal is low, the free layer and reference layer of the spin device are connected to the external voltage U, and the spin device is considered as a gate electrode. When the Vctrl voltage switches to high, the free layer of the spin device is grounded. Depending on whether the external voltage U is negatively or positively biased, the induced current between the free layer and the reference layer sets the spin device to "parallel" or "anti-parallel" spin polarization. Therefore, the electric or magnetic field of the multiphysics control unit is configurable and controllable. Digital signals applied to the DCU control terminal cause the multiphysics control unit to switch physical fields, and analog signals are configured and applied to the DCU input terminal to control the electric or magnetic field distribution. The configuration of the multiphysics control array can be completed in nanoseconds, and the multiphysics control unit has 10... 12 The durability of each cycle can be used to build highly programmable control structures.

[0012] Each multiphysics control unit (MPU) has its spin device's free layer connected to the input and its pinned layer connected to the output. An analog voltage is applied to the inverter's input, and the digital control unit's (DCU) control terminal receives a digital-to-analog voltage to control the physics operating mode. When the digitally controlled voltage (Vctrl) applied to the DCU control terminal is low, the spin device's free layer and reference layer are connected to an external voltage U, and the spin device can be considered a gate electrode. When Vctrl switches to high, the spin device's free layer is grounded. Depending on whether the external voltage U is negatively or positively biased, the induced current between the free layer and reference layer can set the spin device to "parallel" or "anti-parallel" spin polarization. Therefore, the electric or magnetic field of the MPU is configurable and controllable. A digital signal applied to the DCU control terminal causes the MPU to switch physics fields, and an analog signal is applied to the DCU input to control the electric or magnetic field distribution. Configuration of the MPU control array can be completed in nanoseconds, and the MPU control unit has 10... 12 With its durability across multiple cycles, these characteristics can be utilized to construct highly programmable control structures.

[0013] The material for state manipulation is located on a substrate beneath a multiphysics control array. This invention selects an indium gallium arsenide / indium gallium arsenide / indium gallium arsenide (InGaAs / InAs / InGaAs) high-electron-mobility two-dimensional electron gas structure as the elemental material, but is not limited to this material; all materials capable of state manipulation are included. To maximize the tunability of the electric and magnetic fields of the multiphysics control array, the material needs to have gate voltage-tunable electron density (semiconductor) and a large Landé g-factor. High electron mobility is also required. An InGaAs / InAs / InGaAs two-dimensional electron gas structure is selected as the state-tunable material. In this material stack, a quantum well with high electron mobility is formed in the InAs layer. A superconductor band is deposited on the top surface of the structure. The intermediate InGaAs layer can adjust the coupling strength between the superconductor and the quantum well. The multiphysics control array is then deposited on the exposed semiconductor-two-dimensional electron gas, and the local electric and magnetic fields of the InAs can be independently controlled to manipulate the two-dimensional electron gas.

[0014] The multiphysics control array employs a hybrid network, a mesh structure where each grid cell contains four semiconductor-superconductor hybrid components. The spin devices constituting the multiphysics control unit are categorized into three types: wire units, junction units, phase units, and readout units. The only difference between these four types of multiphysics control units is their location relative to the hybrid network. The cell structures themselves are identical in all other respects.

[0015] Field-programmable topology control systems offer more generalized control over matter states and surpass previous technologies because multiphysics control array platforms combine the tunability of electric fields, Zeeman fields, and magnetic flux.

[0016] For the state-controlled material of cross-Andreev reflection, the state-controlled material is a quasi-one-dimensional superconductor sandwiched in the middle by one-dimensional electron gas channels (including L channels and R channels) defined by two gate electrodes, each channel being affected by the physical field controlled by a nearby multiphysics control unit;

[0017] For the docking of materials for the control of the physical state of topological phase transition, nanowires are placed at the bottom of a multiphysics control array, with an insulating material used to isolate them. Hafnium dioxide can be used, as this material can block the flow of current without changing the physical field distribution.

[0018] The material docking for topological braiding is a system consisting of a semiconductor-superconductor heterogeneous network substrate and a separate multiphysics control array layer. The heterogeneous network and the multiphysics control array layer are assembled together, and the multiphysics control array layer is aligned with the heterogeneous network layer to ensure that it is fixed on top of the hybrid grid layer. The entire system is composed of several square units arranged in a grid pattern. Each square unit contains four different semiconductor-superconductor heterogeneous parts, and the electron density at the intersection of different parts is completely controllable.

[0019] For topological quantum transport, it is similar to the docking of materials that are topologically braided. The difference is that the multi-terminal qubit contains 4 topological nanowires, and there are 9 multi-physics control units at the corresponding positions to regulate the two-dimensional electron gas.

[0020] This invention relates to the manipulation of superconducting or semiconductor material properties using electric or magnetic fields generated by a multiphysics control array based on a field-programmable topological state manipulation system. The invention will be illustrated using enhanced cross-Andreev reflection, topological phase transition, synthetic Weyl point, and topological weaving operations, but the manipulation capabilities are not limited to these. These four operations demonstrate the functionality of the system, but it is not limited to only these four operations.

[0021] To enhance cross-Andreev reflection (where, with sufficiently high voltage, electrons can directly enter from the left and exit from the right, though they may still be subject to Andreev reflection, returning a high-energy hole), a quasi-one-dimensional superconductor is sandwiched between two one-dimensional electron gas channels (L-channel and R-channel) defined by two gate electrodes. Each channel is influenced by the physical field controlled by a nearby multiphysics control unit. To further enhance the cross-Andreev reflection process, the multiphysics control array on the L-channel side is configured in a parallel arrangement, while the multiphysics control array on the R-channel side is configured in an antiparallel arrangement. In this configuration, the electron spins near the Fermi levels of the two channels are polarized in an antiparallel manner. This significantly increases the intensity of the cross-Andreev reflection process, while the local Andreev reflection process is greatly suppressed due to the opposite spin polarization on both sides.

[0022] Topological phase transitions are achieved by controlling the nanowires generated at the bottom using a multiphysics control array. Different configurations of the multiphysics control array induce different changes in the spatial oscillating magnetic field, thereby controlling the topological properties of the nanowires. In magnetic field operation mode, the multiphysics control array includes three configurations: antiparallel, parallel, and cross, which result in three different states for the one-dimensional nanowires. By adjusting the period of the helical component of the magnetic field to π / 2 times the effective length of the spin-orbit coupling field using the multiphysics control unit, and ensuring that the amplitude, period, and phase of the oscillating physical field satisfy the conditions for generating the FF phase, additional coupling occurs between the two external dispersive parabolic branches of the Lashba nanowires. This results in a rich topological phase transition in the heterogeneous nanowires, from a trivial superconducting state to a Majorana zero-mode state and then to the FF state.

[0023] By synthesizing the Weyl point, the electric field of the multiphysics control unit alters the chemical potential of the nanowire, causing the band structure of the two-dimensional electron gas to exhibit a Weyl point, thus allowing quantum transport. Under weak tunneling and low-energy conditions, the Andreev bound state spectrum and the associated Weyl point are primarily determined by the coupling strength of the Majorana zero mode, which originates from tunneling coupling within the nanowire. This coupling strength drives topological state transport by controlling the phase difference of the magnetic flux within the multiphysics control unit in each loop under magnetic field operating mode.

[0024] In topological braiding operations, nanowires are influenced by Lashba-type spin interactions (two-dimensional spin-orbit coupling under a uniform electric field). The electrochemical potential of the nanowires can be adjusted through adjacent global gate electrodes. Different configurations of the multiphysics control array will cause different changes in the spatial oscillating magnetic field. In one-dimensional nanowires, with three different multiphysics control array spin devices in antiparallel, parallel, and cross configurations, the Zeeman energy and effective spin-orbit interactions of the nanowires can be extensively controlled due to the amplitude and wavelength of the oscillations and the chemical potential experienced by the nanowires, thereby controlling the topological properties of heterogeneous nanowires. By using the wire units of the multiphysics control unit to change the chemical potential in electric field mode and the oscillation of the helical field in magnetic field mode, the selection of wire units in the topologically trivial or non-trivial phase of the material is equivalent to whether to select a non-rotating p-wave superconductor. Majorana zero modes for braiding operations are formed on the wire units in the topologically non-trivial phase. Junction units control the coupling strength at the connection points of different square units, which can be completely disconnected or connected. Phase units are mainly used to adjust the superconducting phase. By utilizing readout units, Majorana parity measurements are performed based on parity-charge conversion and dispersion readout, enabling topological weaving or quantum computing operations.

[0025] Topological quantum transport modulates the multi-physics unit under multi-terminal qubits, altering the chemical potential of the nanowire to induce Weyl points in the band structure of the two-dimensional electron gas, thus enabling quantum transport. Under weak tunneling and low-energy conditions, the Andreev bound state spectrum and the associated Weyl points are determined by the coupling strength of the Majorana zero mode, which originates from tunneling coupling within the nanowire. The coupling strength drives topological transport by controlling the phase difference of the magnetic flux within each loop.

[0026] This invention presents a field-programmable topological state control system. This system utilizes an array of multiphysics control units arranged on top of a material substrate with tunable state properties. A set of digitally controlled units independently and in real-time regulates the operating modes and states of these control units, thereby achieving field-programmable control of the system's topological state. This field-programmable topological state control system offers more generalized state manipulation and surpasses previous technologies because the multiphysics control array platform combines the tunability of electric fields, Zeeman fields, and magnetic flux. This invention, based on a field-programmable topological state control array method, provides an effective approach for achieving material property manipulation, topological phase transitions, topological quantum computing operations, and quantum gated braiding protocols.

[0027] Beneficial effects:

[0028] This invention enables the construction of a field-programmable topological matter control system. Based on the design of a nanoscale field-programmable control array for topological matter, it fully utilizes mature micro-nano fabrication technology to change the operating mode of the multiphysics array, control the distribution of spatial electric or magnetic fields, and, through adjustment, construct topological matter using currently available non-topological semiconductor materials. This invention overcomes the limitation of topological matter being dependent on material composition, laying a technological foundation for the artificial manufacture of topological matter. The design is highly versatile; in addition to electric and magnetic field control modes, it can also support other functional modes, such as superconducting control, magnetic flux control, pressure control, piezoelectric control, and temperature control. The control system design framework can be widely applied to other technological fields.

[0029] This invention features a highly reconfigurable microcontroller unit capable of constructing and spatially and temporally modulating the desired topological phase, thus enabling feedback control. For semiconductor-based platforms, the gate electrode is the most direct control unit. The gate electrode can adjust the position of the Fermi level, thereby controlling the topological phase. Topological phase transitions can be achieved by adjusting the electron density distribution or other material parameters through a localized electric field. Topological phase transitions can also be achieved by breaking time-reversal symmetry through magnetic flux encirclement or Zeeman spin splitting. Using independently configured spin devices allows for higher resolution spatial magnetic field modulation compared to uniform magnetic fields, enabling more flexible magnetic field manipulation. Spin devices generate amplitude-oscillating magnetic fields to produce synthetic spin-orbit interactions, which play a crucial role in the realization of certain topological phases.

[0030] The field-programmable topological state manipulation system provided by this invention controls the physical properties of materials by manipulating the spatial field distribution formed by a multi-physics control array. This results in materials possessing topological properties and forming topological states, which can be manipulated and measured under the influence of electric or magnetic fields. This makes it possible to realize integrated, miniaturized, scalable, and real-time programmable quantum computing devices, and is extremely important for accelerating the realization of topological quantum computing. Attached Figure Description

[0031] Figure 1 Multiphysics control unit and digital control unit (model diagram);

[0032] Figure 2 Electromagnetic field switching between the digital control unit and the multiphysics control unit;

[0033] Figure 3 Materials with tunable physical states that are heterogeneous between semiconductors and superconductors;

[0034] Figure 4 Schematic diagram of a field-programmable topology control system;

[0035] Figure 5 Multiphysics control arrays are divided into four different types;

[0036] Figure 6 Three states of the connectivity of junction units;

[0037] Figure 7 Reverse polarization of electrons in the two potential wells under electric and magnetic field operating modes;

[0038] Figure 8 It shows a comparison before and after the enhanced cross-Andreev effect, with two figures; Figure 8 In the case of 'a', the result is the cross Andreev reflection under an electromagnetic field without a multiphysics control unit. Figure 8In diagram b, the Andreev reflection effect is enhanced after the electromagnetic field of the multiphysics control unit is turned on. The two diagrams are compared.

[0039] Figure 9 Two-dimensional electron gas was modulated into quasi-one-dimensional nanowires under electric field operating mode;

[0040] Figure 10 Parallel configuration of magnetic field modes;

[0041] Figure 11 Antiparallel configuration of magnetic field modes;

[0042] Figure 12 Cross-configuration of magnetic field modes;

[0043] Figure 13 This is a schematic diagram of the topological transport of the synthetic Weyl points, consisting of two figures; among them... Figure 13 Figure b is Figure 13 The part highlighted by the arrow in Figure a is enlarged for a clearer view;

[0044] Figure 14 The energy spectrum of the Andreev bound state in the full gap;

[0045] Figure 15 Topology weaving operations are performed based on a field-programmable topology state control system.

[0046] Figure 16 Methods for controlling magnetic flux within the loop. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described drawings and embodiments are only some embodiments of this invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0048] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” and “this” are intended to also include expressions such as “one or more,” unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of this application, “at least one” and “one or more” refer to one, two, or more than two. The term “and / or” is used to describe the relationship between related objects, indicating that three relationships may exist; for example, A and / or B can indicate: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character “ / ” generally indicates that the preceding and following related objects are in an “or” relationship.

[0049] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0050] It should be noted that, for ease of understanding of the technical solution of this application, the following embodiments will be illustrated by way of electric and magnetic fields, or it can be understood that the field-programmable topology matter control system mainly includes electric and magnetic fields in its physical implementation. Of course, when matter control is implemented in other physical ways (such as sound field, light field, superconducting control, magnetic flux control, pressure control, piezoelectric control, temperature control, etc.), the same or similar methods described below can also be reasonably applied.

[0051] This invention provides a field-programmable topological state manipulation system, comprising: a multiphysics control array, a digital control unit, a material for state manipulation, and topological state generation and manipulation. The digital control unit controls the multiphysics control array to achieve physical field exchange. The material for state manipulation (such as semiconductor or superconductor materials) is controlled by the multiphysics control array. Influenced by the distribution of the multiphysics fields, the electrons and holes of the material are manipulated, the physical properties change, and topological states are generated. The multiphysics fields are dynamically manipulated in real time to control the topological states.

[0052] Design of multiphysics control units and digital control units, such as Figure 1As shown, the arrayed multiphysics control units constitute a multiphysics control array. The design of the multiphysics control array is composed of an array of spin devices. The spin devices have free layers, pinning layers, and tunneling layers. The materials of the spin devices can be Co(0.5) / Pt(0.2)]6 / Co(0.6) / Ru(0.8) / Co(0.6) / [Pt(0.2) / Co(0.5)]3 / W(0.25) / CoFeB(1.0) / MgO(0.8) / CoFeB(1.3) / W(0.2) / CoFeB(0.5) / MgO(0.75) / Ta(3.0) (where the units of the numbers are nm). They are fabricated on a substrate of a material with state-controlled properties using micro-nano fabrication methods. Figure 1 The digital control unit in the circuit is an inverter composed of a p-type transistor and an n-type transistor. It includes a control terminal, an input terminal, and an output terminal. The input terminal is connected to the free layer of the spin device, and the pinned layer of the spin device is also connected to the pinned layer. The control terminal is loaded with a digital control signal V. crtl Analog control signals are loaded into the free layer of the spin device and the input of the inverter.

[0053] In a field-programmable topology matter control system, the multiphysics control array selects between electric field mode and magnetic field mode by loading a high or low level signal into the digital control unit. Figure 2 As shown, each unit of the multiphysics control array operates independently. Guided by the required electric or magnetic field configuration, a digital control unit generates the target physical field distribution. When the control terminal of the control unit is loaded with a low level, the multiphysics control unit operates in electric field mode. The free layer and reference layer of the spin device are connected to the analog control signal voltage U. The spin device is an equipotential body with voltage U, and a stable spatial electric field distribution exists around it. When the control terminal of the control unit is loaded with a high level, the multiphysics control unit operates in magnetic field mode. The free layer of the spin device is grounded. A positive analog control signal voltage is loaded into the control unit's input terminal. The induced current between the free layer and reference layer of the spin device can set the spin device to parallel spin polarization. When a negative analog control signal voltage is loaded into the control unit's input terminal, the induced current between the free layer and reference layer of the spin device can set the spin device to antiparallel spin polarization.

[0054] According to the principle of electric field superposition, the electric field generated by the entire multiphysics control array is equivalent to the vector sum of the electric fields generated by each multiphysics control unit. Similarly, according to the principle of magnetic field superposition, the magnetic field generated by the entire multiphysics control array is equivalent to the vector sum of the magnetic fields generated by each multiphysics control unit. The multiphysics control unit can complete the calculation in nanoseconds, and it has 10... 12With its durability across multiple cycles, these characteristics can be utilized to construct highly programmable control structures.

[0055] Materials used for state manipulation include indium gallium arsenide / indium arsenide / indium gallium arsenide and aluminum, to heterogeneously modify semiconductor-superconductor structures, such as... Figure 3 As shown, the semiconductor thickness is InGa x As 1-x (10nm) / InAs(4nm) / InGa x As 1-x (4nm) Indium gallium arsenide (IGaAs) provides a two-dimensional electron gas. The material for state modulation is isolated from the upper multiphysics control unit or digital control unit using hafnium dioxide (HfO2). Hafnium dioxide can effectively block current without weakening the physical field function. The thickness of HfO2 is 4nm. The superconducting material is an aluminum strip, with the bottom in contact with the IGaAs material and the two sides in contact with the hafnium dioxide.

[0056] The aforementioned state-of-the-art semiconductor-superconductor heterogeneous network substrate and the separated multiphysics control array layer are combined into a system, such as Figure 4 As shown, the entire system consists of several square units arranged in a grid pattern. Each square unit contains four different semiconductor-superconductor hybrid sections. The electron density at the intersections of these sections is fully controllable. The multiphysics control array is aligned with the hybrid grid layer to ensure it is fixed on top of the hybrid grid layer. It is compatible with various weaving protocols and other quantum information protocols.

[0057] Multiphysics control arrays are divided into four different types: wire, junction, phase, and readout cells. The function and operating mode of each cell type are specified, such as... Figure 5 As shown.

[0058] The wire units are distributed along the semiconductor-superconductor heterogeneous region, such as Figure 5 The wire unit block in the diagram receives a low-level digital control input at the control terminal of the corresponding digital control unit, putting the wire unit into voltage operation mode. Inputting a high or low digital level at the control terminal of the digital control unit puts the multiphysics control unit into magnetic field operation mode and electric field operation mode, respectively, thereby changing the chemical potential of the heterogeneous part and providing oscillation of the helical field.

[0059] The multiphysics-controlled array on top of the semiconductor, which does not cover the superconductor, is a junction unit, such as... Figure 5 The junction unit blocks, when input with a low-level digital input to the corresponding digital control unit, put the junction unit into voltage operation mode. The junction unit controls the direction of superconducting current flow, adjusts the ratio of charge energy to Josephson energy, and controls the coupling strength at the connection points of different square units, achieving complete disconnection, complete connection, and tunneling connection, such as... Figure 6 As shown.

[0060] The central region of the mesh is the phase cell, such as Figure 5 The phase unit block, the corresponding digital control unit inputs a high level digital level to put the phase unit into magnetic field working mode, and adjusts the superconducting phase to perform phase initialization and further phase adjustment.

[0061] Readout cells distributed along the superconductor, such as Figure 5 The reading unit cube is used for measurement based on parity-charge conversion and dispersion readout.

[0062] The wire unit, junction unit, phase unit, and readout unit are all multiphysics control arrays composed of spin periods. Except for their different positions in the heterogeneous network, the unit structures are the same.

[0063] The following are four examples of use cases for field-programmable topology manipulation systems, including enhanced cross-Andreev reflections, generation of topological phases, artificial Weyl points, and topology weaving, but not limited to these examples.

[0064] Example 1: Enhanced Cross-Andreev Reflection Based on Field-Programmable Topological Matter Control System

[0065] Semiconductor and superconductor materials are categorized as follows: Figure 2 The configuration shown is in a field-programmable topology manipulation system multiphysics control array, where a quasi-one-dimensional superconductor is disposed in the row or column gaps of the multiphysics control array, and semiconductors are laid flat below the multiphysics control array. The quasi-one-dimensional superconductor is sandwiched between two one-dimensional electron gas channels (L-channel and R-channel), each channel being affected by the electric field generated by the nearby multiphysics control unit. The two-dimensional electron gas in the semiconductor is affected by the multiphysics control units on both sides in an electric field operating mode. The multiphysics control array on both sides of the quasi-one-dimensional superconductor realizes the electric field operating mode by loading a low-level signal at the control terminal of the digital control unit, and modulates the electric field distribution to form a configuration such as... Figure 7The potential wells shown confine a two-dimensional electron gas within two potential wells, L-channel and R-channel. A multiphysics control array aligned with the adjacent sides of the one-dimensional superconductor achieves electric field operation mode by loading a high-level signal at the control terminal of the digital control unit. A negative analog voltage -U is loaded at the input terminal of the control unit on the L-channel side, setting the spin devices to a parallel configuration; a positive analog voltage U is loaded at the input terminal of the control unit on the L-channel side, setting the spin devices to an antiparallel configuration. At this point, the electron spins near the Fermi levels of the two channels are polarized in an antiparallel manner, resulting in opposite Zeeman splits in the two one-dimensional channels. Furthermore, the oscillating portion of the stray field further mixes spin-up and spin-down electrons through the interaction of synthesized spin orbitals, further enhancing the spin degeneracy of the band structure. This is more conducive to the cross-Andreev reflection process, thereby greatly increasing the intensity of the cross-Andreev reflection process and suppressing the local Andreev reflection process.

[0066] Are there any comparative results under multiphysics modulation, such as... Figure 8 As shown, the results indicate that with the support of multiphysics, the requirements for chemical potential tuning are relaxed, making the cross-Andreev reflection effect easier to achieve. In the absence of the influence of the physical fields generated by the multiphysics control array on the quasi-one-dimensional superconductor, electron transport is mainly determined by the local Andreev reflection process, and the transmission coefficient of the cross-Andreev reflection is only slightly larger than that of the local Andreev reflection at a few resonant tunneling points. In stark contrast, the influence of the physical fields generated by the multiphysics control array makes the cross-Andreev reflection process dominant in a larger region of the parameter space.

[0067] The above embodiments demonstrate the following advantages: A field-programmable topological matter control system has been constructed. Based on the design of a nanoscale field-programmable control array for topological matters, it fully utilizes mature micro-nano fabrication technology to change the operating mode of the multiphysics array, control the distribution of spatial electric or magnetic fields, and regulate the physical properties of materials. This invention overcomes the limitation of topological matter being dependent on material composition, providing a new technology for the artificial manufacture of topological matter. The design is highly versatile, and the control system design framework can be widely applied to other technical fields.

[0068] The applied cross-Andreev reflection is a process that spatially separates but remains entangled Cooper quasiparticles. This entanglement holds promise for testing the EPR paradox using electrons in a solid-state environment, crucial for quantum communication and quantum computing. Furthermore, coupling two one-dimensional structures via cross-Andreev reflection provides a new technical solution for fabricating topological devices, reducing implementation difficulty and offering high flexibility and stability when using multiphysics control systems. This process, through the formation of spatially separated entangled electron-hole pairs, is significant in the formation of solid-state quantum entanglement and has applications in spintronics and quantum computing, promoting the practical application and commercialization of topological quantum computing.

[0069] Example 2: Topological phase transition based on a field-programmable topological state control system:

[0070] Semiconductor and superconductor materials are categorized as follows: Figure 2 The configuration shown is in a field-programmable topology manipulation system multiphysics control array, where a quasi-one-dimensional superconductor is disposed in the row or column gaps of the multiphysics control array, and semiconductors are laid flat below the multiphysics control array. The quasi-one-dimensional superconductor is sandwiched between two one-dimensional electron gas channels (L-channel and R-channel), each channel being affected by the electric field generated by the nearby multiphysics control unit. The two-dimensional electron gas in the semiconductor is affected by the multiphysics control units on both sides in an electric field operating mode. The multiphysics control array on both sides of the quasi-one-dimensional superconductor realizes the electric field operating mode by loading a low-level signal at the control terminal of the digital control unit, and modulates the electric field distribution to form a configuration such as... Figure 9 The potential well shown, in which a two-dimensional electron gas is confined within an L-channel potential well, can be considered a one-dimensional nanowire. Influenced by Lashpa-type spin-orbit coupling interactions, the nanowire is further coupled to a nearby superconductor. A high-level signal is applied to the control terminal of the digital control unit of the multiphysics control array above the one-dimensional nanowire, switching it to magnetic field operating mode. Different configurations of the multiphysics control array will cause different changes in the spatial oscillating magnetic field, thereby controlling the topological properties of the nanowire. In magnetic field operating mode, the multiphysics control array includes three configurations: antiparallel, parallel, and cross, which give the one-dimensional nanowire three different states.

[0071] System state under anti-parallel configuration, such as Figure 10As shown, by loading a low-level signal at the control terminal of the digital control unit, the multiphysics control unit is switched to magnetic field operation mode. By loading an analog positive voltage at the input terminal of the digital control unit, the spin polarization direction of the free layer of the spin device in the multiphysics control unit is made antiparallel to the spin polarization direction of the pinned layer. The free layer of the spin device largely cancels out the magnetic field of the pinned layer, and the net magnetic field strength is insufficient to compensate for the S-wave pairing gap. Therefore, the system is in a trivial gapped superconducting phase.

[0072] System status under parallel configuration, such as Figure 11 As shown, by loading a low-level signal at the control terminal of the digital control unit, the multiphysics control unit is switched to magnetic field operation mode. An analog negative voltage is loaded at the input terminal of the digital control unit, making the spin polarization direction of the free layer of the multiphysics control unit's spin device parallel to the spin polarization direction of the pinned layer. The net magnetic field strength is much higher than in the antiparallel configuration. The system bandgap closes and then reopens with changes in chemical potential, thus realizing the transition from a topologically trivial state to a non-trivial state, accompanied by the appearance of a zero-energy state. The topological invariants reflect the topological properties of this phase, and the wave function distribution of the zero-energy state exhibits strong nonlocal characteristics. When a one-dimensional nanowire possesses a strong spin-orbit coupling effect and forms a heterogeneous system with a superconductor, applying an external magnetic field perpendicular to the spin-orbit coupling field phase can make it a topological superconductor, resulting in a pair of Majorana zero modes at both ends of the nanowire. Unlike the global Zeeman field phase considered in typical one-dimensional nanowire Majorana zero-energy mode schemes, the local stray field excited by the multiphysics array contains both uniform and helical (oscillatory) components. The helical component provides a strong synthetic spin-orbit coupling field, reducing the requirement for the material itself to possess a strong spin-orbit coupling field. The spin-orbit coupling of the system itself can be tuned to a topologically nontrivial state even when it is close to zero.

[0073] System status under cross configuration, such as Figure 12 As shown, by loading a low-level signal at the control terminal of the digital control unit, the multiphysics control unit is switched to magnetic field operation mode. The digital control unit loads positive and negative signals alternately at the input terminal, causing the spin polarization direction of the free layer of the multiphysics control unit's spin device to alternately be parallel and antiparallel to the spin polarization direction of the pinned layer. Under this configuration, the system has two topological phases. When the chemical potential is less than the critical value, the Majorana zero mode exists; when the chemical potential is greater than the critical value, the Andreev mode appears near the edge of the global bandgap.

[0074] Without a pairing bandgap, these Andreev bound states correspond to localized electronic excitations carrying a fractional e / 2 charge. The formation of the FF phase is based on the multiphysics control unit adjusting the period of the magnetic field helical component to pi / 2 times the effective length of the spin-orbit coupling field, and ensuring that the amplitude, period, and phase of the oscillating physical field satisfy the conditions for FF phase generation. This results in additional coupling between the two external dispersive parabolic branches of the Lashba nanowires. The multiphysics control unit itself can directly control the amplitude and period of the oscillating field, and switching to electric field control mode allows for phase modulation. This enables the rich topological phase transitions in the heterogeneous nanowires, from trivial superconducting states to Majorana zero-mode states and then to FF states.

[0075] Beneficial Effects: In the field-programmable topological state control system, the physical control unit operates in magnetic field mode. The magnetic field generates oscillating stray fields, significantly altering the Zeeman energy and effective spin-orbit coupling of the nanowires. Various topological phases can be obtained based on the oscillation amplitude, wavelength, and the observed chemical potential of the nanowires. This system enables very simple manipulation of the material's state, imbuing it with topological properties. It provides an effective new technological means for the initial state preparation of topological quantum computing.

[0076] Example 3: Artificial Synthesis of Weyl Points Based on Field-Programmable Topological Matter Control Systems:

[0077] This case study demonstrates how to create artificially synthesized Weyl points (linear degeneracy points between two energy bands in three-dimensional wave vector space) to enable topological transport in a field-programmable topological state control system.

[0078] The synthesis of Weyl points and the conduction of topological state transport are based on a multiphysics control array. This can be attributed to the emergence of Weyl points in the synthesized Andreev bound state band structure. Coulomb coupling largely depends on magnetic flux. Therefore, magnetic flux can be used as a switch for Majorana zero-mode coupling, and both magnetic flux and phase can be controlled by the phase unit of a field-programmable topological state control system.

[0079] A topologically trivial phase is composed of four topological nanowires, each nanowire containing a Majorana zero mode at each edge, forming a 2x2 mesh structure, such as... Figure 13 As shown, it contains four loops, and the magnetic flux of each square loop can be controlled by a multiphysics control array. Four Majorana zero-energy modes can be formed at the central junction. The intermediate junction can construct a Weyl point in the synthesis space, allowing quantum transport. In the case of weak tunneling coupling, the properties of the junction can be described by four coupled Majorana zero-energy modes.

[0080] The intermediate connection is a central hub region composed of nine multiphysics control units, called the intermediate junction. The multiphysics control units controlling the intermediate junction carry different potential energies. This is used to modulate the electrostatic environment of the two-dimensional electron gas of the underlying indium gallium arsenide semiconductor. The intermediate junction is surrounded by a nanowire mesh, with paired nanowires labeled s and s' (s, s' = 1, 2, 3, 4) within the mesh. The magnetic flux within each mesh is... and All of them are controlled by a multi-physics field control array contained in space under magnetic field working mode.

[0081] When the phase difference between the four superconductors is non-zero, the induced magnetic flux passes through the intermediate junction. Therefore, the total magnetic flux of the outer loop of the entire 2x2 grid is the superconducting phase difference is... There are two scenarios: one is that the superconductor completely shields the magnetic field, so the intermediate junction is not affected by magnetic flux and no eddy currents are generated in the entire peripheral loop; the other is that the superconductor does not completely shield the magnetic field, the intermediate junction is affected by magnetic flux, and eddy currents are generated in the entire peripheral loop.

[0082] Next, through the multiphysics control unit in the intermediate junction and Operating in electric field mode with a fixed voltage ratio And it was possible to obtain, such as Figure 14 The Andreev bound state energy spectrum of the full gap is shown, where T2 is the intensity of electron tunneling between the nearest nanowires at the intermediate junction medium.

[0083] Multiphysics control unit in Coupling strength is Under the voltage configuration, 16 Weyl points are synthesized in three-dimensional space. The Weyl points on the characteristic line have the same topological charge, and all Weyl points have a topological charge of ±1.

[0084] when The topological phase transition that occurs when the voltage ratio changes sign, with the Berry curvature concentrating near the Weyl point as the voltage ratio approaches 0, contributes ±1 / 2. For positive... Under voltage ratios, the sign of the resulting Berry curvature is the same as the sign of the Weyl point charge, for negative... At the voltage ratio, the sign of the resulting Berry curvature is opposite to the sign of the Weyl point charge, indicating that the sign change of the Berry curvature in this transition is equal to that of their respective Weyl charges.

[0085] The two-dimensional electron gas in the intermediate junction of the nanowire is coupled with a superconductor, labeled S(1,2,3,4). The coupling of the superconductor typically involves only nearest-neighbor and second-nearest-neighbor couplings, denoted by T1 and T2, respectively. When the potential energy... The positive or negative value is large enough to ensure that the coupling of the nanowires controlled by the different multiphysics control unit positions of the intermediate junction is either on or off. When the coupling is on, the two-dimensional electron gas below the intermediate junction becomes a stepping stone for nanowire electrons to jump from one nanowire to another. When the coupling is off, nanowire electrons will not be able to jump from one nanowire to another.

[0086] The entire process can be summarized as follows: the vorticity of the flow field formed at the lowest energy level of the system is near a suitable Weyl point. Under weak tunneling and low-energy states, the tunneling coupling between nanowires generates effectively coupled Majorana zero modes, which determine the Andreev bound states and the corresponding Weyl points, thus completing the topological transport. The properties of the qubits and the surrounding two-dimensional electron gas are altered under the control of a multiphysics control array. A digital negative voltage signal is loaded into the control port of the digital control unit around the qubits, putting the multiphysics control unit in electric field mode. The potential of the multiphysics control unit on the nanowires is adjusted, causing a change in the chemical potential of the nanowires, which in turn modulates the band structure of the two-dimensional electron gas to have a Weyl point, thus allowing quantum transport. Under weak tunneling and low-energy conditions, the Andreev bound state spectrum and the associated Weyl point are mainly determined by the coupling strength of the Majorana zero modes, which originates from the tunneling coupling within the nanowires. The coupling strength drives the topological transport by controlling the phase difference of the magnetic flux within each loop. In other words, the coupling strength between qubits is affected by the magnetic flux in the loops. The Majorana zero mode is modulated by magnetic field. By loading a digital positive voltage signal into the control terminal of the digital control unit, the multiphysics control unit is in magnetic field working mode.

[0087] Beneficial effects: The artificial synthesis of Weyl points based on field-programmable topological state control system to realize topological state transport has high scalability and simple and flexible spatiotemporal control, providing a new technical means and unique platform for observing new quantum transport in Andreev bound states and multi-terminal Josephson junctions.

[0088] Example 4: Performing topology weaving operation based on a field-programmable topology state control system:

[0089] Field-programmable topological state manipulation systems are compatible with a variety of weaving and other quantum information protocols, regardless of whether these protocols involve: the exchange of Majorana zero modes in physical space, or coupling of Majorana zero modes using charging effects, or projection measurements on qubits defined by Majorana zero modes. In the current case study, we elaborate on the protocols based on field-programmable topological state manipulation systems that enable us to perform non-Abelian weaving using Majorana zero modes. Beyond these possibilities, we employ Coulomb and flux-assisted protocols to demonstrate a Majorana zero-mode-driven weaving process. To perform this task, it is necessary to classify the units of the field-programmable topological state manipulation system into four different types: wire units, junction units, phase units, and readout units, such as... Figure 4 As shown.

[0090] This process involves applying Coulomb and flux-assisted protocols to the topology weaving of a multiphysics control array (MPA) within the system. The MPA utilizes four different types of cells: wire, junction, phase, and readout cells. The function and operating mode of each cell type are specified.

[0091] Functional allocation of grid cells. Wire cells are used to set the topologically trivial or non-trivial phase of the hybrid segment; phase cells fix the phase of the superconducting quantum interference device within the grid cells; junction cells are used to control the electrical transmissivity of the junction. Junction cell configurations vary depending on the operating mode. In the "disconnected" state, Cooper pairs and monoparticle transport channels are completely pinched off; in the effectively connected state, a larger Josephson junction current can flow; and junction cells operating in tunneling mode allow the braiding operation to set the optimal Josephson energy. Readout cells are used to distribute the readout quantum circuitry.

[0092] We Figure 15 The demonstration shown shows how to create three pairs of Majorana zero modes and form a Majorana triple junction. The energy of the triple junction consists of two parts: the coupling energy between the Majorana zero modes and the tunneling energy of electrons through the junction, which includes the coupling between the Majorana zero modes of the "Majorana box" with capacitive properties.

[0093] First, one-dimensional nanowires can be defined using wire units, such as... Figure 15 The junction unit is shown in the diagram. The wire unit can also control the topological phase transition of the one-dimensional nanowire. Secondly, the junction unit can adjust the charge energy / Josephson energy ratio, thereby controlling the fusion of Majorana zero modes. Then, the phase unit can adjust the magnetic flux to drive the weaving of Majorana zero modes. The complete protocol for weaving a pair of Majorana zero modes in the specific network is as follows:

[0094] The system controls the multiphysics control unit corresponding to the wire element in the field-programmable topology manipulation system by loading a low level at the input of the digital control unit, thus setting the multiphysics control unit to voltage operation mode. This generates Majorana zero-mode pairs in the nanowire.

[0095] The multiphysics control unit corresponding to the junction unit in the field-programmable topology state control system is controlled by loading a low level at the input of the digital control unit, thus setting the multiphysics control unit to voltage operation mode. A Majorana cell is defined, and the ratio between the charge energy and the Josephson energy is finely adjusted. Then, the three Majorana cells within the junction unit are fused to the junction center.

[0096] In the field-programmable topology state control system, the multiphysics control unit corresponding to the phase unit is controlled by loading a high level at the input of the digital control unit, thus setting the multiphysics control unit to magnetic field operating mode. The magnetic flux control method is as follows: Figure 16 As shown, the magnetic flux within the loop formed by the nanowires is minimized, thus initializing the three nanowires. Nanowires labeled 1 and 2 have the smallest phase, while the loop of nanowire 3 has the largest magnetic flux. The magnetic flux phase is controlled by reversing the magnetic field direction in the magnetic field operating mode by changing the phase unit of the multi-physics array.

[0097] Adjust the magnetic flux phase within the loop formed by nanowire No. 1 to its maximum;

[0098] Adjust the magnetic flux phase within the loop formed by nanowire No. 3 to the minimum;

[0099] Adjust the magnetic flux phase within the loop formed by nanowire No. 2 to its maximum;

[0100] Adjust the magnetic flux phase within the loop formed by nanowire No. 1 to the minimum;

[0101] Adjust the magnetic flux phase within the loop formed by nanowire No. 3 to its maximum;

[0102] Adjust the magnetic flux phase within the loop formed by nanowire No. 2 to the minimum;

[0103] Adjust the magnetic flux phase within the loop formed by nanowire No. 3 to the minimum;

[0104] The above process takes into account both the steps required to generate Majorana zero energy mode and the knob operation that affects the required Majorana weaving.

[0105] Beneficial effects: The field-programmable topological state manipulation system is compatible with various weaving and other quantum information protocols, regardless of whether these protocols involve: the exchange of Majorana zero modes in physical space, coupling of Majorana zero modes using the charging effect, or projection measurements on qubits defined by Majorana zero modes. Protocols based on the field-programmable topological state manipulation system enable flexible non-Abelian weaving using Majorana zero modes. Coulomb and flux-assisted protocols can also be used for Majorana zero-mode driven weaving processes. The field-programmable topological state manipulation system provides a more convenient new technological platform for realizing optional weaving or quantum computing operations.

Claims

1. A field-programmable topology state control system, characterized in that, It includes a multiphysics control array, a digital control unit, a matter-modulating material, and a topological state generation and control unit. The multiphysics control array is selected as either an electric field mode or a magnetic field mode by the digital control unit. Each unit of the multiphysics control array selects an independent control unit for its working mode. Based on the required electric or magnetic field configuration generated by the digital control unit, a target distribution of physical fields is generated to perform topological matter-modulating, causing changes in the physical properties of the matter-modulating material, thus endowing the matter-modulating material with topological properties. The multiphysics control array is controlled in real time, and the spatially distributed physical fields change accordingly, thus controlling the topological state, i.e., topological matter-modulating. Each multiphysics control unit in the multiphysics control array is a micro-spin device: a spin-transfer torque device (STT), a spin-orbit torque device (SOT), a voltage-controlled magnetic anisotropy device (VCMA), or any device capable of realizing an electromagnetic field, so as to achieve local control of electric and magnetic fields. The digital control unit is a transistor: it is an inverter and needs to have a control terminal, an input terminal, and an output terminal; the free layer of the spin device in each multiphysics control unit is connected to the input terminal, and the pinned layer of the spin device is connected to the output terminal; the input terminal of the inverter is connected to an analog voltage, and the control terminal of the digital control unit is connected to a digital-analog voltage to control the working mode of the physical field. The material with controlled physical state is on the substrate, below the multiphysics control array; Materials for controlling the state of matter: Semiconductor-superconductor heterostructures; The electric or magnetic fields generated by the multiphysics control array of the field-programmable topology control system can be used to control the properties of superconducting or semiconductor materials, including enhanced cross-Andreev reflection, topological phase transition, synthesis of Weyl points or topological weaving operations. However, the functions of the field-programmable topology control system are not limited to the above operations.

2. The field-programmable topology state control system according to claim 1, characterized in that, When the digital control voltage is applied to the control terminal of the digital control unit V When Ctrl is low, the free layer and reference layer of the spin device are connected to an external voltage. U At this point, the spin device is considered as a gate electrode; when the numerical control voltage... V When Ctrl is switched to high, the free layer of the spinneret is grounded; this depends on the external voltage. U Whether negatively or positively biased, the induced current between the free layer and the reference layer sets the spin device to "parallel" or "anti-parallel" spin polarization; therefore, the electric or magnetic field of the multiphysics control unit is configurable and controllable; digital signals are applied to the control terminal of the digital control unit to exchange physical fields, and analog signals are configured and applied to the input terminal of the digital control unit to control the electric or magnetic field distribution; the configuration of the multiphysics control array can be completed in nanoseconds, and the multiphysics control unit has 10 12 The durability of each cycle can be used to build programmable control structures.

3. The field-programmable topology control system according to claim 1, characterized in that, High electron mobility two-dimensional electron gas structures of indium gallium arsenide / indium gallium arsenide / indium gallium arsenide InGaAs / InAs / InGaAs were selected as the material for state manipulation. To maximize the tunability of the electric and magnetic fields of the multiphysics control array, semiconductors with gate voltage-tunable electron density and a large Landé g-factor were chosen for state manipulation, while high electron mobility was also required, including indium gallium arsenide / indium arsenide / indium gallium arsenide materials and all semiconductor materials that can provide two-dimensional electron gases. The multiphysics control array is a hybrid network of four types of multiphysics grid control units. The hybrid network is a mesh structure, and each grid control unit has a hybrid part of four semiconductor-superconductor units. The spin devices that make up the multiphysics network control unit are divided into four categories: wire units, junction units, phase units, and readout units. The only difference between the four types of multiphysics control units is that they are located in different positions relative to the hybrid network; the unit structure itself is the same in other respects.

4. The field-programmable topology state control system according to claim 1 or 3, characterized in that, The material properties of the material controlled by the electric or magnetic field generated by the multiphysics control array of the field-programmable topology state control system are superconducting or semiconductor materials, including enhanced cross-Andreev reflection, topological phase transition, synthetic Weyl point and topological weaving operation. Enhanced cross-Andreev reflection operation: When the voltage is high enough, electrons can directly enter from the left and exit from the right. Of course, they may still be subject to interference. Andreev reflex The quasi-one-dimensional superconductor is sandwiched between two one-dimensional electron gas channels defined by two gate electrodes, namely the L channel and the R channel. Each channel is affected by the physical field controlled by the nearby multiphysics control unit, which enhances the cross-Andreev reflection process. The multiphysics control array on the L channel side is set to a parallel configuration, while the multiphysics control array on the R channel side is set to an antiparallel configuration. Under this configuration, the electron spins near the Fermi level of the two channels are polarized in an antiparallel manner, thereby greatly increasing the intensity of the cross-Andreev reflection process. Since the spin polarizations on both sides are opposite, the local Andreev reflection process is greatly suppressed. Topological phase transitions are performed on the nanowires generated at the bottom using a multiphysics control array. Different configurations of the multiphysics control array cause different changes in the spatial oscillating magnetic field, thereby controlling the topological properties of the nanowires. The multiphysics control array, in its magnetic field operating mode, includes three configurations: antiparallel, parallel, and cross-configuration. These three configurations result in three different states for the one-dimensional nanowires. Based on the multiphysics control unit, the period of the magnetic field helical component is adjusted to π / 2 times the effective length of the spin-orbit coupling field, and the amplitude, period, and phase of the oscillating physical field satisfy the conditions for generating the FF phase. This results in additional coupling between the two external dispersive parabolic branches of the Lashba nanowires. This process generates rich topological phase transitions in the heterogeneous nanowires, from the trivial superconducting state to the Majorana zero-mode state and then to the FF state. Synthetic Weyl point manipulation involves altering the chemical potential of the nanowire by controlling the electric field of the multiphysics control unit, thereby creating a Weyl point in the band structure of the two-dimensional electron gas, which allows for quantum transport. Under weak tunneling and low-energy conditions, the Andreev bound state spectrum and the associated Weyl point are determined by the coupling strength of the Majorana zero mode, which originates from tunneling coupling within the nanowire. This coupling strength drives topological state transport by controlling the phase difference of the magnetic flux within the multiphysics control unit in each loop under magnetic field operating mode. In topological braiding operations, nanowires are influenced by Lashpa-type spin, i.e., two-dimensional spin-orbit coupling interactions under a uniform electric field. The electrochemical potential of the nanowires is modulated through a nearby global gate electrode. Different configurations of the multiphysics control array will cause different changes in the spatial oscillating magnetic field. In one-dimensional nanowires, under three different configurations of spin devices in three different multiphysics control arrays (antiparallel, parallel, and cross configurations), the Zeeman energy and effective spin-orbit interactions of the nanowires are extensively modulated due to the amplitude and wavelength of the oscillations and the chemical potential experienced by the nanowires, thereby controlling the topological properties of heterogeneous nanowires. By using the wire units of the multiphysics control unit to change the chemical potential in the electric field operating mode and the oscillation of the helical field in the magnetic field operating mode, the selection of whether the wire units are in the topologically trivial or non-trivial phase is equivalent to whether to select the non-rotational wire units. p - A wave superconductor forms Majorana zero modes for weaving operations on wire units in a topologically nontrivial phase. Junction units control the coupling strength at the connections of different square units, allowing them to be completely disconnected or connected. Phase units are used to adjust the superconducting phase. Using readout units, parity measurements of Majorana are performed based on parity-charge conversion and dispersion readout, realizing topological weaving or quantum computing operations.

5. The field-programmable topology state control system according to claim 4, characterized in that, In the process of enhancing cross-Andreev reflection, for a metal / superconductor / metal sandwich structure, an electron in the left metal is incident on the superconductor, a hole is reflected back, and an electron enters from the right metal to form a Cooper pair with the previous electron. The multiphysics control array on the L channel side is set to a parallel configuration, while the multiphysics control array on the R channel side is set to an antiparallel configuration. Under this configuration, the electron spins near the Fermi level of the two channels are polarized in an antiparallel manner, which can greatly enhance the intensity of the cross-Andreev reflection process. Since the spin polarizations on both sides are opposite, the local Andreev reflection process is greatly suppressed.

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