A near-field electric field quantitative measurement method and device, electronic equipment and storage medium

Abstract

The present disclosure relates to a near-field electric field quantitative measurement method and device, electronic equipment and storage medium. The method comprises: obtaining a first linear relationship between a first incident electric field and a first near-field electric field; obtaining an instrument constant of a scanning near-field optical microscope; obtaining a first linear coefficient of any to-be-measured point on a to-be-measured sample according to the instrument constant and the first linear relationship; obtaining a reconstructed near-field electric field of the to-be-measured point under an actual incident electric field incident to the to-be-measured sample as a near-field electric field quantitative measurement result of the to-be-measured point according to the actual incident electric field and the first linear coefficient of the to-be-measured point. The process combines the first linear relationship reflecting the incident electric field and the near-field electric field relationship of the first measurement area of the to-be-measured sample with the instrument constant reflecting the influence of the tip-sample coupling on the near-field electric field of the surface of the to-be-measured sample, realizes the reconstruction of the near-field electric field of the surface of the to-be-measured sample, and improves the accuracy of the quantitative measurement of the near-field electric field of the surface of the to-be-measured sample.

Description

Technical Field

[0001] This disclosure relates to the field of electric field measurement technology, and in particular to a method and apparatus for quantitative measurement of near-field electric fields, electronic equipment, and storage medium. Background Technology

[0002] Scanning near-field optical microscopy (SNOM) is a nanomaterial characterization technique that has matured in recent years. When a beam of light shines on the surface of a material, electrons or other charge carriers on the surface of the material will produce a corresponding response, generating a near-field electric field distribution within a height of hundreds of nanometers on the sample surface. SNOM introduces an AFM tip into the near-field region. The tip is polarized by the near-field electric field and guides the signal to the detector through radiation, thereby measuring the electric field in the near-field region.

[0003] However, the polarized tip also influences the charge distribution on the sample surface, and this effect on the tip can be approximated as a "mirror dipole" within the sample. Since each scan may be under different scanning conditions, and the specific values ​​of the tip-sample coupling (i.e., the interaction between the sample's near-field electric field and the "mirror dipole") are unclear, the tip-sample coupling makes it difficult to measure the near-field electric field of the sample surface using the tip polarization intensity under different scanning conditions. This, in turn, makes it impossible to quantitatively measure the near-field electric field of the sample surface. Summary of the Invention

[0004] In view of this, this disclosure proposes a near-field electric field quantitative measurement technology.

[0005] According to one aspect of this disclosure, a method for quantitatively measuring a near-field electric field is provided, comprising: acquiring a first linear relationship between a first incident electric field and a first near-field electric field, wherein the first near-field electric field is generated by a first measurement region of a sample under test based on the first incident electric field; acquiring an instrument constant of a scanning near-field optical microscope, wherein the instrument constant is used to indicate the difference between measured and simulated values ​​of the near-field electric field of a sample under test having the same dielectric constant; obtaining a first linear coefficient at any test point on the sample under test based on the instrument constant and the first linear relationship, wherein the first linear coefficient is used to indicate a multiple relationship between a second incident electric field and a second near-field electric field, wherein the second near-field electric field is generated by the test point based on the second incident electric field; and obtaining a reconstructed near-field electric field at the test point under the actual incident electric field and the first linear coefficient at the test point, as a quantitative measurement result of the near-field electric field at the test point.

[0006] In one possible implementation, obtaining the instrument constants of a scanning near-field optical microscope includes: obtaining a second linear relationship between a third incident electric field and a third near-field electric field, the third near-field electric field being generated by a second measurement region of a standard sample based on the third incident electric field; obtaining a third linear relationship between a simulated incident electric field and a fourth near-field electric field, the fourth near-field electric field being generated by the second measurement region based on a simulation of the simulated incident electric field; and obtaining the instrument constants based on the second linear relationship and the third linear relationship.

[0007] In one possible implementation, obtaining the first linear relationship between the first incident electric field and the first near-field electric field includes: obtaining the first near-field electric field generated by the first measurement region based on at least two of the first incident electric fields; and determining the first linear relationship based on the first incident electric field and the first near-field electric field. Obtaining the second linear relationship between the third incident electric field and the third near-field electric field includes: obtaining the third near-field electric field generated by the second measurement region based on at least two of the third incident electric fields; and determining the second linear relationship based on the third incident electric field and the third near-field electric field.

[0008] In one possible implementation, obtaining the first linear coefficient of any test point on the sample based on the instrument constant and the first linear relationship includes: acquiring the second near-field electric field generated by the test point based on the second incident electric field; and obtaining the first linear coefficient based on the second incident electric field, the second near-field electric field, the instrument constant, and the first linear relationship.

[0009] In one possible implementation, before obtaining the first linear relationship between the first incident electric field and the first near-field electric field, the method further includes: constructing a minimum region containing the first near-field electric field, centered on the center point of the geometric figure formed by connecting the centers of the various patterns of the sample under test, and using the region where the minimum region is located as the first measurement region; wherein the first measurement region does not include the region where the probe of the scanning near-field optical microscope is coupled to the edge of the sample under test.

[0010] In one possible implementation, the standard sample is cylindrical in shape. Before obtaining the second linear relationship between the third incident electric field and the third near-field electric field, the method further includes: constructing a minimum circle containing the third near-field electric field with the center of the standard sample as the center, and using the region where the minimum circle is located as the second measurement region; wherein the second measurement region does not include the region where the probe of the scanning near-field optical microscope is coupled to the edge of the standard sample.

[0011] In one possible implementation, the scanning incident electric field of the scanning near-field optical microscope is incident orthogonally from the bottom of the sample.

[0012] According to another aspect of this disclosure, a near-field electric field quantitative measurement device is provided, comprising: a first linear relationship acquisition module, configured to acquire a first linear relationship between a first incident electric field and a first near-field electric field, wherein the first near-field electric field is generated by a first measurement region of a sample under test based on the first incident electric field; an instrument constant acquisition module, configured to acquire an instrument constant of a scanning near-field optical microscope, wherein the instrument constant is used to indicate the difference between the measured and simulated values ​​of the near-field electric field of a sample under test having the same dielectric constant; a first linear coefficient acquisition module, configured to obtain a first linear coefficient at any test point on the sample under test based on the instrument constant and the first linear relationship, wherein the first linear coefficient is used to indicate the multiple relationship between a second incident electric field and a second near-field electric field, wherein the second near-field electric field is generated by the test point based on the second incident electric field; and a reconstructed near-field electric field acquisition module, configured to obtain the reconstructed near-field electric field of the test point under the actual incident electric field and the first linear coefficient of the test point, as the quantitative measurement result of the near-field electric field of the test point.

[0013] In one possible implementation, the instrument constant acquisition module includes: a second linear relationship acquisition submodule, used to acquire a second linear relationship between a third incident electric field and a third near-field electric field, wherein the third near-field electric field is generated by a second measurement region of a standard sample based on the third incident electric field; a third linear relationship acquisition submodule, used to acquire a third linear relationship between a simulated incident electric field and a fourth near-field electric field, wherein the fourth near-field electric field is generated by the second measurement region based on the simulated incident electric field; and an instrument constant acquisition module, used to obtain the instrument constant based on the second linear relationship and the third linear relationship.

[0014] In one possible implementation, the first linear relationship acquisition module includes: a first near-field electric field acquisition submodule, configured to acquire the first near-field electric field generated by the first measurement region based on at least two first incident electric fields; a first linear relationship determination submodule, configured to determine the first linear relationship based on the first incident electric field and the first near-field electric field; and a second linear relationship acquisition submodule, configured to: acquire the third near-field electric field generated by the second measurement region based on at least two third incident electric fields; and determine the second linear relationship based on the third incident electric field and the third near-field electric field.

[0015] In one possible implementation, the first linear coefficient acquisition module includes: a second near-field electric field acquisition submodule, used to acquire the second near-field electric field generated by the test point based on the second incident electric field; and a first linear coefficient acquisition submodule, used to obtain the first linear coefficient based on the second incident electric field, the second near-field electric field, the instrument constant, and the first linear relationship.

[0016] In one possible implementation, the apparatus further includes: a first measurement region determination module, configured to, before acquiring the first linear relationship between the first incident electric field and the first near-field electric field, construct a minimum region containing the first near-field electric field, centered on the center point of the geometric shape formed by connecting the centers of the various patterns of the sample under test, and use the region where the minimum region is located as the first measurement region; wherein the first measurement region does not include the region where the probe of the scanning near-field optical microscope is coupled to the edge of the sample under test.

[0017] In one possible implementation, the standard sample is cylindrical in shape, and the device further includes a second measurement region determination module, configured to construct a minimum circle containing the third near-field electric field with the center of the standard sample as the center before obtaining the second linear relationship between the third incident electric field and the third near-field electric field, and to use the region where the minimum circle is located as the second measurement region; wherein the second measurement region does not include the region where the probe of the scanning near-field optical microscope is coupled to the edge of the standard sample.

[0018] In one possible implementation, the scanning incident electric field of the scanning near-field optical microscope is incident orthogonally from the bottom of the sample.

[0019] According to another aspect of this disclosure, an electronic device is provided, comprising: a processor; a memory for storing processor-executable instructions; wherein the processor is configured to implement the above-described method when executing instructions stored in the memory.

[0020] According to another aspect of this disclosure, a non-volatile computer-readable storage medium is provided that stores computer program instructions thereon, wherein the computer program instructions, when executed by a processor, implement the above-described method.

[0021] According to another aspect of this disclosure, a computer program product is provided, including computer-readable code, or a non-volatile computer-readable storage medium carrying computer-readable code, wherein when the computer-readable code is run in a processor of an electronic device, the processor in the electronic device performs the above-described method.

[0022] In this embodiment of the disclosure, by obtaining the first near-field electric field of the first measurement area of ​​the sample under the first incident electric field, a first linear relationship between the first incident electric field and the first near-field electric field of the sample is obtained. Then, based on the instrument constant and the first linear relationship, a first linear coefficient reflecting the first incident electric field and the first near-field electric field at any point on the sample is obtained. Based on the first linear coefficient, the reconstructed near-field electric field of the sample under the actual incident electric field can be obtained, which serves as the quantitative measurement result of the near-field electric field at the measurement point. This process combines the first linear relationship between the incident electric field and the near-field electric field in the first measurement region of the sample with the instrument constant of the scanning near-field optical microscope, which reflects the influence of tip-sample coupling on the near-field electric field of the sample surface, to obtain the first linear coefficient of any measurement point of the sample. Then, the reconstructed near-field electric field of the measurement point can be obtained by using the first linear coefficient of the measurement point and the actual incident electric field, thus realizing the reconstruction of the near-field electric field of the sample surface. This process accurately quantifies the influence of tip-sample coupling on the near-field electric field of the sample surface, making the reconstructed near-field electric field of the measurement point closer to the real near-field electric field, thereby improving the accuracy of quantitative measurement of the near-field electric field of the sample surface.

[0023] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure.

[0024] Other features and aspects of this disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0025] The accompanying drawings, which are included in and form part of this specification, illustrate exemplary embodiments, features, and aspects of this disclosure together with the specification and serve to explain the principles of this disclosure.

[0026] Figure 1 A flowchart is shown for a method for quantitative measurement of near-field electric field according to an embodiment of the present disclosure.

[0027] Figure 2 A schematic diagram illustrating the working principle of a scanning near-field optical microscope is shown.

[0028] Figure 3 A flowchart illustrating the fabrication of a standard sample according to an embodiment of the present disclosure is shown.

[0029] Figure 4 A comparison diagram showing near-field scanning results and simulation results of a standard sample according to an embodiment of the present disclosure is provided.

[0030] Figure 5 A schematic diagram illustrating an application example according to this disclosure is shown.

[0031] Figure 6 A schematic diagram showing the SEM scan results and near-field scan results of a sample under test according to an application example of this disclosure.

[0032] Figure 7 A schematic diagram of linear fitting according to an application example of this disclosure is shown.

[0033] Figure 8 The diagram shows a comparison between the reconstructed near-field electric field and the simulated near-field electric field in a region of interest according to an application example of this disclosure.

[0034] Figure 9 A block diagram of a near-field electric field quantitative measurement device according to an embodiment of the present disclosure is shown.

[0035] Figure 10 A block diagram of an electronic device according to an embodiment of the present disclosure is shown.

[0036] Figure 11 A block diagram of an electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0037] Various exemplary embodiments, features, and aspects of this disclosure will now be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote elements that have the same or similar functions. Although various aspects of the embodiments are shown in the drawings, they are not necessarily drawn to scale unless specifically indicated otherwise.

[0038] The term “exemplary” as used herein means “serving as an example, embodiment, or illustration.” Any embodiment illustrated herein as “exemplary” is not necessarily to be construed as superior to or better than other embodiments.

[0039] In this document, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A alone, A and B simultaneously, and B alone. Furthermore, the term "at least one" in this document means any combination of at least two of any one or more elements. For example, including at least one of A, B, and C can mean including any one or more elements selected from the set consisting of A, B, and C.

[0040] Furthermore, to better illustrate this disclosure, numerous specific details are set forth in the following detailed description. Those skilled in the art will understand that this disclosure can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art have not been described in detail in order to highlight the main points of this disclosure.

[0041] Figure 1A flowchart illustrating a method for quantitative measurement of near-field electric field according to an embodiment of the present disclosure is shown. This method can be applied to a near-field electric field quantitative measurement device, which can be a terminal device, server, or other processing device. The terminal device can be a user equipment (UE), mobile device, user terminal, terminal, cellular phone, cordless phone, personal digital assistant (PDA), handheld device, computing device, vehicle-mounted device, wearable device, etc.

[0042] In some possible implementations, this near-field electric field quantitative measurement method can be implemented by a processor calling computer-readable instructions stored in memory.

[0043] like Figure 1 As shown, the near-field electric field quantitative measurement method may include:

[0044] In step S11, a first linear relationship between the first incident electric field and the first near-field electric field is obtained, wherein the first near-field electric field is generated by the first measurement region of the sample under test based on the first incident electric field.

[0045] Currently, with the development of manufacturing towards smaller sizes and lower dimensions, near-field optics, a discipline that studies subwavelength scales of distance from the object's surface, has become a new field in modern optics. The near-field region can be within a few hundred nanometers of the object's surface, while the far-field region refers to the area outside the near-field. The near-field electric field can be a non-radiative or radiative field within the near-field region. The non-radiative field is also known as the evanescent field. Because the evanescent field carries information about the object's fine structure, by detecting subwavelength optical information on the object's surface, the object's fine structure can be obtained, achieving ultra-high resolution.

[0046] Due to the wave nature of light and the diffraction limit caused by it, the resolution of traditional optical microscopes cannot be increased indefinitely. Traditional optical microscopes are primarily located in the far field, only receiving propagating light field information while ignoring non-radiative evanescent waves. Scanning near-field optical microscopes (SNOMs) have overcome this diffraction limit, achieving spatial resolution on the nanometer scale, making them an important tool for studying the near-field electric field of object surfaces.

[0047] In one possible implementation, the device for detecting the near-field electric field in this disclosure can be a scanning near-field optical microscope. To better illustrate this disclosure and highlight its main points, the specific embodiments described herein use a scanning near-field optical microscope as the subject of description. Those skilled in the art should understand that this disclosure can also be implemented using other technologies and / or devices that can meet the near-field measurement requirements of this disclosure.

[0048] Figure 2 This is a schematic diagram illustrating the working principle of a scanning near-field optical microscope. Figure 2 As shown, scanning near-field optical microscopy uses probe technology to convert the near-field electric field (hidden field) of an object in the near-field region into a propagable radiation field, which is then received by a detector in the far-field region to obtain super-resolution limit information of the object contained in the near-field electric field.

[0049] Since the electric field and charge of the sample under illumination conform to Maxwell's equations, and Maxwell's equations are linear under normal conditions, the near-field electric field at any point on the surface of the sample is linearly related to the incident electric field. In one possible implementation, the average near-field electric field of the sample under the first incident electric field within the first measurement region can be obtained, thus reflecting the overall influence of each first incident electric field on the near-field electric field generated by the sample under each first incident electric field.

[0050] The first measurement region is the area on the sample to be tested where the near-field electric field of the sample is measured. The scanning near-field optical microscope uses a point-by-point scanning method to measure the near-field electric field of each pixel on the sample to be tested. To ensure the accuracy of the near-field electric field measurement of the sample to be tested, as many effective measurement points as possible can be selected. In one possible implementation, before obtaining the first linear relationship between the first incident electric field and the first near-field electric field, the method further includes: constructing a minimum region containing the first near-field electric field, centered on the center point of the geometric shape formed by connecting the centers of the various shapes of the sample to be tested; and using the region containing the minimum region as the first measurement region; wherein the first measurement region does not include the region where the probe of the scanning near-field optical microscope couples with the edge of the sample to be tested. For example, the center point can be one of the centroid, circumcenter, incenter, orthocenter, or excenter of the geometric shape.

[0051] As an example, the first measurement region can be circular. Specifically, a minimum region can be constructed in the measurement result diagram of the first near-field electric field of the sample under the first incident electric field, with the center point of the geometric figure formed by connecting the centers of the various shapes in the sample as the center. This minimum region contains as many hot spots as possible generated by the first near-field electric field of the sample under the first incident electric field in the measurement result diagram. The region where the minimum region is located is taken as the first measurement region. Since the first measurement region includes as many points on the sample under the test as possible that generate the near-field electric field, it reduces the influence of irrelevant measurement points on the measurement value of the first near-field electric field, improves the accuracy of subsequently determining the first linear relationship between the first incident electric field and the first near-field electric field, and thus improves the accuracy of reconstructing the near-field electric field of the test points on the sample under the test.

[0052] Due to its shape, the probe of a scanning near-field optical microscope often appears as a bright area in the near-field electric field measurement result image when there is strong coupling between the probe tip edge and the sample. Since the coupling point between the probe tip edge and the sample is generally at the sample edge, in one possible implementation, the diameter of the first measurement region can be determined based on the near-field electric field measurement result image of the sample. This determination process can avoid the bright edge areas in the measurement result image caused by strong coupling between the probe tip edge and the sample. By avoiding the bright edge areas in the near-field electric field measurement result image, the first measurement region avoids the area where the probe tip edge is coupled to the sample, reducing the influence of invalid measurement points in the coupling area on the near-field measurement result of the first measurement region. This improves the accuracy of the first near-field electric field measurement result of the first measurement region of the sample, thereby ensuring the accuracy of the first linear relationship in step S11 and further improving the accuracy of the reconstructed near-field electric field of the measurement points on the sample.

[0053] The near-field electric field of the sample under test varies under different incident electric fields. Therefore, after obtaining the first near-field electric fields generated in the first measurement region of the sample under test under at least two first incident electric fields, the relationship between the first incident electric field and the first near-field electric field of the sample under test can be determined based on multiple first incident electric fields and the first near-field electric fields. The near-field electric field of the test point on the sample under test can then be reconstructed based on this relationship, making the reconstructed near-field electric field closer to the true near-field electric field of the test point. In one possible implementation, obtaining the first linear relationship between the first incident electric field and the first near-field electric field includes: obtaining the first near-field electric fields generated in the first measurement region under at least two first incident electric fields; and determining the first linear relationship based on the first incident electric field and the first near-field electric field. The first near-field electric fields generated under at least two first incident electric fields can better reflect the influence of the first incident electric field on the first near-field electric field of the sample under test. In one possible implementation, different first incident electric fields of the sample under test can be obtained by changing the filter in the incident light path. The number of the first incident electric fields is at least two. This disclosure does not specify the number of the first incident electric fields, and the number can be selected according to the actual situation.

[0054] Since the average value of the first near-field electric field can reflect the overall influence of the first incident electric field on the first near-field electric field of the sample under test, in one possible implementation, a linear fit can be performed on the first incident electric field and the average value of the first near-field electric field to determine whether a linear relationship exists between them. In one possible implementation, determining the first linear relationship based on the first incident electric field and the first near-field electric field can be achieved by using different first incident electric fields as the abscissa and the average value of the first near-field electric field in the first measurement area corresponding to different first incident electric fields as the ordinate, performing a linear fit to obtain the intercept and / or slope of the line representing the first linear relationship. This slope reflects the linear relationship between the first near-field electric field and the first incident electric field during the actual measurement of the near-field electric field of the sample under test, and the intercept is the deviation between the product of the first near-field electric field and the first incident electric field and the linear coefficient (i.e., the slope) during the actual measurement of the near-field electric field.

[0055] In step S12, the instrument constant of the scanning near-field optical microscope is obtained. The instrument constant is used to indicate the difference between the measured and simulated values ​​of the near-field electric field of the scanning near-field optical microscope for a sample with the same dielectric constant.

[0056] Under ideal conditions, the probe of a scanning near-field optical microscope can convert the near-field electric field (hidden field) of a sample into a propagable radiation field, which is then received by a detector in the far-field region to obtain the super-resolution limit information of the object contained in the near-field electric field. During this process, the scanning near-field optical microscope does not affect the near-field electric field of the sample, i.e., there is no tip-sample coupling phenomenon. In one possible implementation, computer simulation software can be used to simulate the measurement environment of the near-field electric field of the sample under ideal conditions to obtain the simulated value of the near-field electric field. However, in reality, due to the tip-sample coupling phenomenon of the optical microscope, the measured value of the near-field electric field of the sample obtained using the optical microscope deviates from the measured value under ideal conditions. To obtain the measured value of the near-field electric field of the sample under the incident electric field, this disclosure uses an instrument constant to indicate the magnitude of the difference caused by the tip-sample coupling effect, and further incorporates this instrument constant into the reconstruction of the near-field electric field of the sample to make the reconstructed near-field electric field of each test point of the sample closer to the true near-field electric field of the test point.

[0057] The varying thicknesses of the metal films on the tips of different optical microscopes, their different radii of curvature, and the differences in the distance between the tips and the samples result in different effects of different microscopes on the near-field electric field of the same sample. Furthermore, the near-field electric field is closely related to the dielectric properties of the sample. To reduce the difficulty of obtaining the instrument constant, one possible approach is to use the same scanning near-field optical microscope to obtain the instrument constant of a standard sample with a simple pattern and the same dielectric constant as the sample being tested.

[0058] In one possible implementation, the standard sample and the test sample can be samples with different patterns on the same homogeneous thin film on the same substrate. Since the standard sample and the test sample are samples with different patterns on the same homogeneous thin film, the only difference between them is the pattern. This limitation ensures that the dielectric constants of the standard sample and the test sample are consistent. Furthermore, since the standard sample and the test sample are on the same substrate, the vertical distance from the probe tip to the test sample and the standard sample are the same. Thus, using the same scanning near-field optical microscope, the standard sample and the test sample have the same dielectric constant and the same vertical distance from the probe tip to the test sample and the standard sample, resulting in identical instrument constants for the test sample and the standard sample. In this embodiment, the simple pattern of the standard sample reduces the difficulty of obtaining the instrument constant of the test sample.

[0059] In one possible implementation, the standard sample and the sample to be tested can be patterned on a high-quality 100 nm thick thin film prepared by thin film growth methods such as electron beam evaporation deposition or magnetron sputtering. Specifically, the thin film can be a gold film, silver film, copper film, or other non-metallic dielectric material film. This disclosure does not specifically limit the material of the thin film, and it can be selected according to the actual situation.

[0060] Because the electric field and charge of the sample conform to Maxwell's equations under illumination, and Maxwell's equations are linear under normal conditions, the near-field electric field at any point on the surface of the standard sample is linearly related to the incident electric field. Therefore, the instrument constant of the standard sample can be obtained from the relationship between the near-field electric field and the incident electric field under ideal conditions and the relationship between the near-field electric field and the incident electric field under actual conditions.

[0061] In one possible implementation, the process of obtaining the instrument constants of the scanning near-field optical microscope may include:

[0062] A second linear relationship is obtained between a third incident electric field and a third near-field electric field, wherein the third near-field electric field is generated by a second measurement region of a standard sample based on the third incident electric field;

[0063] A third linear relationship is obtained between the simulated incident electric field and the fourth near-field electric field, the fourth near-field electric field being generated by the second measurement region based on the simulation of the simulated incident electric field;

[0064] The instrument constants are obtained based on the second linear relationship and the third linear relationship.

[0065] To reduce the computational complexity of the instrument constant for the standard sample, in one possible implementation, the standard sample is cylindrical. Before obtaining the second linear relationship between the third incident electric field and the third near-field electric field, the method further includes: constructing a minimum circle containing the third near-field electric field with the center of the standard sample as the center, and using the region containing the minimum circle as the second measurement region; wherein the second measurement region does not include the region where the probe of the scanning near-field optical microscope couples with the edge of the standard sample. Specifically, a cylindrical standard sample can be etched onto a thin film. To avoid the influence of the surrounding thin film on the near-field electric field of the cylindrical standard sample, the spacing between the standard sample and the surrounding thin film can be set to no less than 2 micrometers, for example. Figure 3 This is a flowchart for fabricating standard samples on a substrate. (Example) Figure 3 (a) is a basis. Figure 3 (b) shows the growth of a thin film on a substrate. Figure 3 (c) and Figure 3In diagram (d), a cylindrical standard sample is etched onto the substrate. Further, a minimum circle containing the third near-field electric field can be constructed with the center of the standard sample as its center. This minimum circle includes as many hot spots as possible formed in the measurement result diagram of the third near-field electric field under the third incident electric field. The region containing this minimum circle is designated as the second measurement region. This disclosure does not specifically limit the magnitude and relationship of the first, second, and third incident electric fields; they can be selected according to actual conditions.

[0066] When the tip of a scanning near-field optical microscope, due to its shape, strongly couples with the sample at the edge of the standard sample, this often appears as a bright area in the near-field electric field measurement results. The coupling point between the tip sidewall and the sample is generally at the sample edge. In one possible implementation, the diameter of the second measurement region can be determined based on the near-field electric field measurement results of the standard sample. This determination process should avoid showing bright edge areas in the measurement results where the tip sidewall strongly couples with the sample. This process avoids the influence of invalid measurement points in the coupling region on the near-field measurement results of the second measurement region, improving the measurement results of the near-field electric field of the second measurement region of the standard sample, and thus ensuring the accuracy of the second linear relationship.

[0067] In this embodiment, by setting the standard sample as a circle, and taking the center point of the geometric figure formed by connecting the centers of the various shapes in the standard sample as the center, a minimum region containing the first near-field electric field is constructed. This minimum region contains as many hot spots as possible formed by the measurement result map of the third near-field electric field of the standard sample under the third incident electric field. The region where the minimum region is located is taken as the first measurement region. This second measurement region includes as many points as possible on the sample to be tested that generate the near-field electric field, while avoiding the influence of irrelevant measurement points on the measurement value of the third near-field electric field. This improves the accuracy of subsequently determining the second linear relationship between the incident electric field and the near-field electric field generated by the standard sample based on the incident electric field, thereby improving the accuracy of the instrument constant of the standard sample, further improving the accuracy of the instrument constant of the sample to be tested, and improving the accuracy of reconstructing the near-field electric field of the sample to be tested under the actual incident electric field.

[0068] The near-field electric field of a standard sample differs under different incident electric fields. Therefore, after obtaining the third near-field electric fields generated in the second measurement region of the standard sample under at least two third incident electric fields, the relationship between the third incident electric field and the third near-field electric field of the standard sample can be determined based on multiple third incident electric fields and the third near-field electric fields. In one possible implementation, obtaining the second linear relationship between the third incident electric field and the third near-field electric field includes: obtaining the third near-field electric fields generated in the second measurement region under at least two third incident electric fields; and determining the second linear relationship based on the third incident electric field and the third near-field electric field. The third near-field electric fields generated under at least two third incident electric fields can better reflect the influence of the third incident electric field on the third near-field electric field of the sample under test. Since the average value of the third near-field electric field in the second measurement region can reflect the overall influence of the third incident electric field on the third near-field electric field of the standard sample, in one possible implementation, the third incident electric field and the average value of the third near-field electric field can be linearly fitted to obtain the intercept and / or slope of the straight line representing the second linear relationship. In one possible implementation, this linear fitting can be performed with different third incident electric fields as the abscissa and the average value of the third near-field electric field in the second measurement region corresponding to different third incident electric fields as the ordinate, to obtain the intercept and / or slope of the straight line representing the second linear relationship. The intercept represents the deviation between the product of the third near-field electric field and the third incident electric field with the linear coefficient (i.e., the slope) during the actual measurement of the near-field electric field of the standard sample. It reflects the difference between the product of the third near-field electric field and the third incident electric field with the linear coefficient. The slope represents the linear coefficient of the third near-field electric field and the third incident electric field during the actual measurement of the near-field electric field of the standard sample. This linear coefficient not only reflects the influence of the instrument constant on the near-field electric field, but also reflects the multiple relationship between the incident electric field and the near-field electric field of the standard sample during the actual measurement.

[0069] Figure 4 This is a comparison chart of near-field scanning results obtained from actual measurements of a cylindrical standard sample and simulation results obtained from computer simulation software. Figure 4 In the middle (a), the scanning results of the cylindrical standard sample under atomic force microscopy (AFM) are shown. The scanning results reflect the morphological characteristics of the sample, and different colors represent different heights. Figure 4 (b) shows the scanning results of a cylindrical standard sample under a scanning near-field optical microscope. Different colors represent different surface electric field intensities. Figure 4 (c) shows the simulation results of the cylindrical standard sample in computer simulation software. Different colors represent different surface electric field intensities. Figure 4 (b) and Figure 4The dashed area in (c) represents the region of interest after edge effects have been eliminated. Figure 4 It can be seen that, Figure 4 (b) and Figure 4 The electric field intensity distribution in the region of interest in (c) is relatively consistent. Therefore, the instrument constant of the sample to be tested can be obtained through the simulation results of the standard sample.

[0070] In one possible implementation, computer simulation software can be used to simulate the fourth near-field electric field of the second measurement region of the standard sample under a simulated incident electric field, thereby obtaining the third linear coefficient of the incident electric field and near-field electric field of the standard sample under ideal conditions. Since it is a simulated state, there is no influence from the tip-sample coupling relationship, and there is no deviation between the multiple relationship between the fourth incident electric field of the standard sample and the simulated near-field electric field. Therefore, in one possible implementation, the fourth near-field electric field of the second measurement region of the standard sample under a simulated incident electric field can be obtained, and the average value of the fourth near-field electric field at all points in the second measurement region can be divided by the simulated incident electric field to obtain the value that reflects the third linear relationship. In one possible implementation, the simulated incident electric field can be 1 V / m. This disclosure does not specifically limit the type of computer simulation software; any software capable of simulating the near-field electric field of the sample surface under an incident electric field is acceptable.

[0071] In this disclosure, setting the measurement areas for calculating the second and third linear relationships during the acquisition of instrument constants to be the same can keep the data ranges of the incident electric field and near-field electric field of the second linear coefficient obtained from simulation and the second linear relationship obtained from actual scanning consistent, thereby making the calculation of instrument constants more accurate.

[0072] In one possible implementation, the instrument constant can be obtained based on the second and third linear relationships. Specifically, the slope representing the second linear relationship obtained in the above process can be divided by the value representing the third linear relationship to obtain the instrument constant of the standard sample. Since the instrument constants of the standard sample and the test sample are the same, the instrument constant of the test sample can be obtained. To ensure that the instrument constants of the standard sample and the test sample are the same, in one possible implementation, during the near-field scanning of the standard sample and the test sample with different laser powers, the incident light irradiation conditions and the tip amplitude should be kept consistent.

[0073] In this embodiment, a third linear relationship is obtained by simulating the incident electric field and the fourth near-field electric field of the second measurement region of the standard sample under ideal conditions. A second linear relationship is then obtained by simulating the third incident electric field and the third near-field electric field of the second measurement region of the standard sample. Furthermore, the instrument constant of the standard sample is obtained using both the second and third linear relationships. Since the instrument constants of the standard sample and the sample to be tested are the same, the instrument constant of the sample to be tested can be further obtained. Because the standard sample can be selected with a simple pattern, while the pattern of the sample to be tested is often more complex, this process reduces the difficulty of obtaining the instrument constant of the sample to be tested.

[0074] In step S13, based on the instrument constant and the first linear relationship, a first linear coefficient is obtained for any test point on the test sample. The first linear coefficient is used to indicate the multiple relationship between the second incident electric field and the second near-field electric field. The second near-field electric field is generated by the test point based on the second incident electric field.

[0075] The test point is any point on the sample to be tested. Specifically, the test point can be a point within / outside the first measurement area of ​​the sample to be tested; this disclosure does not specifically limit the location of the test point. Since the electric field and charge of the sample to be tested conform to Maxwell's equations under illumination, and Maxwell's equations are linearly related under normal conditions, in an ideal state, the correction value of the near-field electric field at any point on the surface of the sample to be tested is linearly related to the incident electric field. As can be seen from the solution process of the second linear relationship in the aforementioned standard sample, in a non-ideal state, there is a deviation between the product of the third near-field electric field and the third incident electric field with the linear coefficient (i.e., the slope). Therefore, it is necessary to correct the second near-field electric field so that the corrected second near-field electric field conforms to the linear relationship with the second incident electric field. Then, based on this linear relationship, the near-field electric field of any test point on the sample to be tested can be reconstructed, making the reconstructed near-field electric field of the test point closer to the true near-field electric field of the test point. In one possible implementation, the correction value represents the intercept of the first linear relationship.

[0076] In one possible implementation, obtaining the first linear coefficient of any test point on the sample based on the instrument constant and the first linear relationship includes: acquiring the second near-field electric field generated by the test point based on the second incident electric field; and obtaining the first linear coefficient based on the second incident electric field, the second near-field electric field, the instrument constant, and the first linear relationship. Specifically, the second incident electric field of the test point in step S13 and the first incident electric field in step S11 are both incident electric fields that can be generated by a scanning near-field optical microscope. Specifically, the second incident electric field of the test point in step S13 can be the first incident electric field in step S11, or it can be an incident electric field different from the first incident electric field in step S11. This disclosure does not specifically limit the relationship between the first incident electric field in step S11 and the second incident electric field in step S13. Similarly, this disclosure does not specifically limit the value of the third incident electric field used to acquire the instrument constant.

[0077] In one possible implementation, the formula for obtaining the correction value (intercept representing the first linear relationship) of the near-field electric field at any point on the surface of the sample under test, which is linearly related to the incident electric field, can be as follows:

[0078] k0=(Yb) / (k1*X) (1)

[0079] Where k0 is the first linear coefficient, Y is the second near-field electric field of the test point, X is the second incident electric field of the test point, k1 is the instrument constant, and b is the correction value of the second near-field electric field.

[0080] The calculation process of the first linear coefficient takes into account the influence of the instrument constant of the scanning near-field optical microscope on the near-field electric field of the sample under test. At the same time, it corrects the second near-field electric field of the test point by using the first linear relationship between the first incident electric field and the first near-field electric field generated by the first incident electric field in the first measurement area of ​​the sample under test. This improves the accuracy of calculating the reconstructed near-field electric field of the sample under test in the actual measurement process.

[0081] Since step S13 does not limit the order of obtaining the instrument constant and the first linear relationship, this disclosure also does not specifically limit the execution steps of steps S11 and S12, which can be set according to the actual situation.

[0082] In step S14, based on the actual incident electric field incident on the sample to be tested and the first linear coefficient of the test point, the reconstructed near-field electric field of the test point under the actual incident electric field is obtained, which serves as the quantitative measurement result of the near-field electric field of the test point.

[0083] After obtaining the first linear coefficient in step S13, since the reconstructed near-field electric field of the sample surface is linearly related to the actual incident electric field at any point on the sample, the reconstructed near-field electric field of the sample can be obtained based on the actual incident electric field of the sample surface and the first linear coefficient of any point on the sample.

[0084] In this embodiment of the disclosure, by obtaining the first near-field electric field of the first measurement area of ​​the sample under the first incident electric field, a first linear relationship between the first incident electric field and the first near-field electric field of the sample is obtained. Then, based on the instrument constant and the first linear relationship, a first linear coefficient reflecting the first incident electric field and the first near-field electric field at any point on the sample is obtained. Based on the first linear coefficient, the reconstructed near-field electric field of the sample under the actual incident electric field can be obtained, which serves as the quantitative measurement result of the near-field electric field at the measurement point. This process combines the first linear relationship between the incident electric field and the near-field electric field in the first measurement region of the sample with the instrument constant of the scanning near-field optical microscope, which reflects the influence of tip-sample coupling on the near-field electric field of the sample surface, to obtain the first linear coefficient of any measurement point of the sample. Then, the reconstructed near-field electric field of the measurement point can be obtained by using the first linear coefficient of the measurement point and the actual incident electric field, thus realizing the reconstruction of the near-field electric field of the sample surface. This process accurately quantifies the influence of tip-sample coupling on the near-field electric field of the sample surface, making the reconstructed near-field electric field of the measurement point closer to the real near-field electric field, thereby improving the accuracy of quantitative measurement of the near-field electric field of the sample surface.

[0085] Current research based on transmission-type scanning near-field optical microscopy relies on the interference of surface waves excited by the tip with incident light during testing, forming fringes. The wavelength of the surface wave is obtained by measuring the fringe spacing, leading to the corresponding dielectric constant of the material, or the properties of waveguides are studied using these fringes. However, commonly used reflection-type scanning near-field optical microscopy operates under oblique incidence conditions. Oblique incidence results in a fixed spot area and phase difference issues. Therefore, for the study of plasmon resonances on metal surfaces, transmission-type scanning near-field optical microscopy is better because the incident and probe light paths are decoupled in transmission-type devices, allowing adjustment of the incident light's illumination area. Furthermore, because of bottom incidence, there is no phase difference. In one possible implementation, the scanning incident electric field of the scanning near-field optical microscope is incident orthogonally from the bottom of the sample.

[0086] In this embodiment of the present disclosure, the scanning incident electric field of the scanning near-field optical microscope is incident directly from the bottom of the standard sample or the sample to be tested. On the one hand, the incident light path and the detection light path are changed from sharing a single light path to each using its own light path, and the two light paths are completely unrelated, thus achieving decoupling of the incident light path and the detection light path. This allows the irradiation area of ​​the incident light to be freely adjusted without considering the detection light path. On the other hand, the incident light path changes from oblique incidence to normal incidence, and the light on both sides of the incident light path has the same path length and there is no phase difference.

[0087] Application scenario examples

[0088] Currently, scanning near-field optical microscopy technology is well-developed. However, because the coupling effect between the tip and the sample in scanning near-field optical microscopy cannot be directly and accurately quantified, the measurement results of the near-field electric field cannot be directly quantified. Instead, the relative magnitudes can only be compared within the same scanning result.

[0089] Figure 5 The figure shows an application example according to the present disclosure. As shown, the present disclosure provides a method for quantitative measurement of near-field electric field, which can be roughly divided into four steps.

[0090] The first step is to obtain the sample. The specific process includes: silver film preparation and sample etching.

[0091] The silver film preparation refers to the preparation of a high-quality 100nm thick silver film using thin film growth methods such as electron beam evaporation deposition / magnetron sputtering.

[0092] The sample etching refers to etching a cylinder (standard sample) and the sample to be tested with a diameter of 600 nm on a silver film using a focused ion beam (FIB). The distance between the cylinder and the surrounding silver film is not less than 2 micrometers.

[0093] The second step is to obtain the instrument constants of the scanning near-field optical microscope. This process includes: near-field electric field simulation of standard samples, actual near-field electric field measurement of standard samples, and calculation of the instrument constants of standard samples.

[0094] The near-field electric field simulation of the standard sample refers to simulating the near-field electric field distribution on the upper surface of the cylinder under the condition that linearly polarized light with an electric field of 1V / m is incident from the bottom.

[0095] The near-field electric field measurement of the standard sample refers to scanning the cylindrical sample using a transmission type-scanning near-field optical microscope (t-SNOM) and obtaining the near-field scanning results of the standard sample under different laser powers P by changing the filter in the incident light path.

[0096] The calculation of the instrument constant for the standard sample involves taking a cylinder with the center of the standard sample as the center and a diameter of 520 nm, calculating the average near-field electric field of the data points within the cylinder, plotting different laser powers as the abscissa and the average value as the ordinate, and performing linear fitting to obtain the corresponding slope. The same operation is performed on the simulation results, dividing the average near-field electric field of the simulation results by the electric field of the incident light to obtain the standard value k0; and dividing the slope obtained by linear fitting of the near-field scanning results of the standard sample by the standard value k0 to obtain the instrument constant k1.

[0097] The third step is to calculate the linear coefficients of the sample under test. The specific process includes: measuring the near-field electric field of the sample under test, fitting the measured values, and calculating the first linear coefficient at the test point.

[0098] The measured near-field electric field of the sample under test refers to the use of a transmission type-scanning near-field optical microscope (t-SNOM) to scan the sample under test, and to obtain the first near-field electric field of the sample under different laser powers by changing the filter in the incident light path.

[0099] The measured value fitting refers to determining the first measurement area from the sample to be tested, calculating the average value of the first near-field electric field of the data points in the area, plotting the first incident electric field with different laser powers as the abscissa and the average value of the first near-field electric field as the ordinate, and performing linear fitting to obtain the corresponding slope and intercept b. Figure 6 This is a schematic diagram showing the scanning results of a sample under a scanning electron microscope (SEM) and the measured near-field electric field results. Figure 6 (a) is a SEM image of the morphology. Figure 6 Image (b) shows the near-field scan results. Figure 6 The region of interest is within the dashed line in (b). Figure 7 The diagram illustrates the linear fitting of the scanning results of the standard sample and the sample to be tested in the second and third steps.

[0100] The calculation of the first linear coefficient of the test point refers to subtracting the intercept b in the measured value fitting from the second near-field measurement result of the test point of the test sample, and dividing by the product of the instrument constant k1 and the laser power P of the corresponding second incident electric field. The result obtained is the first linear coefficient of the test point.

[0101] The fourth step is the reconstruction of the near-field electric field of the sample under test. The reconstruction of the near-field electric field of the sample under test refers to obtaining the reconstructed near-field electric field of any test point by multiplying the actual incident electric field on the sample under test with the first linear coefficient of the test point. This reconstructed near-field electric field is then used as the quantitative measurement result of the near-field electric field of the test point. Figure 8 for Figure 6 The image shows a comparison of the reconstructed near-field electric field and the simulated near-field electric field in the region of interest under an incident electric field of 1 V / m. Figure 8 (a) and Figure 8 (b) shows the electric field distribution of the reconstructed near-field electric field and the simulated near-field electric field in the region of interest, respectively.

[0102] In this embodiment of the disclosure, by obtaining the first near-field electric field of the first measurement area of ​​the sample under the first incident electric field, a first linear relationship between the first incident electric field and the first near-field electric field of the sample is obtained. Then, based on the instrument constant and the first linear relationship, a first linear coefficient reflecting the first incident electric field and the first near-field electric field at any point on the sample is obtained. Based on the first linear coefficient, the reconstructed near-field electric field of the sample under the actual incident electric field can be obtained, which serves as the quantitative measurement result of the near-field electric field at the measurement point. This process combines the first linear relationship between the incident electric field and the near-field electric field in the first measurement region of the sample with the instrument constant of the scanning near-field optical microscope, which reflects the influence of tip-sample coupling on the near-field electric field of the sample surface, to obtain the first linear coefficient of any measurement point of the sample. Then, the reconstructed near-field electric field of the measurement point can be obtained by using the first linear coefficient of the measurement point and the actual incident electric field, thus realizing the reconstruction of the near-field electric field of the sample surface. This process accurately quantifies the influence of tip-sample coupling on the near-field electric field of the sample surface, making the reconstructed near-field electric field of the measurement point closer to the real near-field electric field, thereby improving the accuracy of quantitative measurement of the near-field electric field of the sample surface.

[0103] It should be noted that the near-field electric field quantitative measurement method of the present disclosure is not limited to the near-field electric field measurement of the sample to be tested on the above-mentioned silver film, but can be applied to the near-field electric field measurement of the sample to be tested on other gold films, copper films and other non-metallic dielectric material films, and the present disclosure does not limit it.

[0104] It is understood that the various method embodiments mentioned above in this disclosure can be combined with each other to form combined embodiments without violating the principle and logic. Due to space limitations, this disclosure will not elaborate further. Those skilled in the art will understand that in the above methods of specific implementation, the specific execution order of each step should be determined by its function and possible internal logic.

[0105] In addition, this disclosure also provides a near-field electric field quantitative measurement device, electronic device, computer-readable storage medium, and program, all of which can be used to implement any of the near-field electric field quantitative measurement methods provided in this disclosure. The corresponding technical solutions and descriptions are described in the corresponding records in the method section and will not be repeated here.

[0106] Figure 9 A block diagram of a near-field electric field quantitative measurement device according to an embodiment of the present disclosure is shown. This near-field electric field quantitative measurement device can be a terminal device, a server, or other processing device. The terminal device can be a user equipment (UE), mobile device, user terminal, terminal, cellular phone, cordless phone, personal digital assistant (PDA), handheld device, computing device, vehicle-mounted device, wearable device, etc.

[0107] In some possible implementations, the near-field electric field quantitative measurement device can be implemented by a processor calling computer-readable instructions stored in memory.

[0108] like Figure 9 As shown, the near-field electric field quantitative measurement device 90 may include:

[0109] The first linear relationship acquisition module 91 is used to acquire the first linear relationship between the first incident electric field and the first near-field electric field, wherein the first near-field electric field is generated by the first measurement region of the sample under test based on the first incident electric field.

[0110] The instrument constant acquisition module 92 is used to acquire the instrument constant of the scanning near-field optical microscope. The instrument constant is used to indicate the difference between the measured value and the simulated value of the near-field electric field of the scanning near-field optical microscope for a sample with the same dielectric constant.

[0111] The first linear coefficient acquisition module 93 is used to obtain the first linear coefficient of any test point on the test sample according to the instrument constant and the first linear relationship. The first linear coefficient is used to indicate the multiple relationship between the second incident electric field and the second near-field electric field. The second near-field electric field is generated by the test point based on the second incident electric field.

[0112] The reconstructed near-field electric field acquisition module 94 is used to obtain the reconstructed near-field electric field of the test point under the actual incident electric field and the first linear coefficient of the test point based on the actual incident electric field incident on the test sample and the first linear coefficient of the test point, and use it as the quantitative measurement result of the near-field electric field of the test point.

[0113] In one possible implementation, the instrument constant acquisition module includes: a second linear relationship acquisition submodule, used to acquire a second linear relationship between a third incident electric field and a third near-field electric field, wherein the third near-field electric field is generated by a second measurement region of a standard sample based on the third incident electric field; a third linear relationship acquisition submodule, used to acquire a third linear relationship between a simulated incident electric field and a fourth near-field electric field, wherein the fourth near-field electric field is generated by the second measurement region based on the simulated incident electric field; and an instrument constant acquisition module, used to obtain the instrument constant based on the second linear relationship and the third linear relationship.

[0114] In one possible implementation, the first linear relationship acquisition module includes: a first near-field electric field acquisition submodule, configured to acquire the first near-field electric field generated by the first measurement region based on at least two first incident electric fields; a first linear relationship determination submodule, configured to determine the first linear relationship based on the first incident electric field and the first near-field electric field; and a second linear relationship acquisition submodule, configured to: acquire the third near-field electric field generated by the second measurement region based on at least two third incident electric fields; and determine the second linear relationship based on the third incident electric field and the third near-field electric field.

[0115] In one possible implementation, the first linear coefficient acquisition module includes: a second near-field electric field acquisition submodule, used to acquire the second near-field electric field generated by the test point based on the second incident electric field; and a first linear coefficient acquisition submodule, used to obtain the first linear coefficient based on the second incident electric field, the second near-field electric field, the instrument constant, and the first linear relationship.

[0116] In one possible implementation, the apparatus further includes: a first measurement region determination module, configured to, before acquiring the first linear relationship between the first incident electric field and the first near-field electric field, construct a minimum region containing the first near-field electric field, centered on the center point of the geometric shape formed by connecting the centers of the various patterns of the sample under test, and use the region where the minimum region is located as the first measurement region; wherein the first measurement region does not include the region where the probe of the scanning near-field optical microscope is coupled to the edge of the sample under test.

[0117] In one possible implementation, the standard sample is cylindrical in shape, and the device further includes a second measurement region determination module, configured to construct a minimum circle containing the third near-field electric field with the center of the standard sample as the center before obtaining the second linear relationship between the third incident electric field and the third near-field electric field, and to use the region where the minimum circle is located as the second measurement region; wherein the second measurement region does not include the region where the probe of the scanning near-field optical microscope is coupled to the edge of the standard sample.

[0118] In one possible implementation, the scanning incident electric field of the scanning near-field optical microscope is incident orthogonally from the bottom of the sample.

[0119] This disclosure also proposes a computer-readable storage medium storing computer program instructions that, when executed by a processor, implement the above-described method. The computer-readable storage medium may be a non-volatile computer-readable storage medium.

[0120] This disclosure also proposes an electronic device, including: a processor; and a memory for storing processor-executable instructions; wherein the processor is configured to invoke the instructions stored in the memory to execute the above-described method.

[0121] This disclosure also provides a computer program product including computer-readable code, which, when executed on a device, causes a processor in the device to execute instructions for implementing the near-field electric field quantitative measurement method provided in any of the above embodiments.

[0122] This disclosure also provides another computer program product for storing computer-readable instructions that, when executed, cause a computer to perform the operation of the near-field electric field quantitative measurement method provided in any of the above embodiments.

[0123] Electronic devices can be provided as terminals, servers, or other forms of devices.

[0124] Figure 10 This diagram illustrates a block diagram of an electronic device 800 according to an embodiment of the present disclosure. For example, the electronic device 800 may be a mobile phone, computer, digital broadcasting terminal, messaging device, game console, tablet device, medical device, fitness equipment, personal digital assistant, or other terminal.

[0125] Reference Figure 10 The electronic device 800 may include one or more of the following components: processing component 802, memory 804, power supply component 806, multimedia component 808, audio component 810, input / output interface 812, sensor component 814, and communication component 816.

[0126] Processing component 802 typically controls the overall operation of electronic device 800, such as operations associated with display, telephone calls, data communication, camera operation, and recording operations. Processing component 802 may include one or more processors 820 to execute instructions to complete all or part of the steps of the methods described above. Furthermore, processing component 802 may include one or more modules to facilitate interaction between processing component 802 and other components. For example, processing component 802 may include a multimedia module to facilitate interaction between multimedia component 808 and processing component 802.

[0127] Memory 804 is configured to store various types of data to support the operation of electronic device 800. Examples of this data include instructions for any application or method operating on electronic device 800, contact data, phonebook data, messages, pictures, videos, etc. Memory 804 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0128] Power supply component 806 provides power to various components of electronic device 800. Power supply component 806 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic device 800.

[0129] Multimedia component 808 includes a screen that provides an output interface between the electronic device 800 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors may sense not only the boundaries of the touch or swipe action but also the duration and pressure associated with the touch or swipe operation. In some embodiments, multimedia component 808 includes a front-facing camera and / or a rear-facing camera. When the electronic device 800 is in an operating mode, such as a shooting mode or a video mode, the front-facing camera and / or the rear-facing camera may receive external multimedia data. Each front-facing camera and rear-facing camera may be a fixed optical lens system or have focal length and optical zoom capabilities.

[0130] Audio component 810 is configured to output and / or input audio signals. For example, audio component 810 includes a microphone (MIC) configured to receive external audio signals when electronic device 800 is in an operating mode, such as call mode, recording mode, and voice recognition mode. The received audio signals may be further stored in memory 804 or transmitted via communication component 816. In some embodiments, audio component 810 also includes a speaker for outputting audio signals.

[0131] Input / output interface 812 provides an interface between processing component 802 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, power buttons, and lock buttons.

[0132] Sensor assembly 814 includes one or more sensors for providing state assessments of various aspects of electronic device 800. For example, sensor assembly 814 can detect the on / off state of electronic device 800, the relative positioning of components such as the display and keypad of electronic device 800, changes in position of electronic device 800 or a component of electronic device 800, the presence or absence of user contact with electronic device 800, orientation or acceleration / deceleration of electronic device 800, and temperature changes of electronic device 800. Sensor assembly 814 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. Sensor assembly 814 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, sensor assembly 814 may also include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor.

[0133] Communication component 816 is configured to facilitate wired or wireless communication between electronic device 800 and other devices. Electronic device 800 can access wireless networks based on communication standards, such as WiFi, 2G, or 3G, or combinations thereof. In one exemplary embodiment, communication component 816 receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, communication component 816 also includes a near-field communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on radio frequency identification (RFID) technology, Infrared Data Association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0134] In an exemplary embodiment, the electronic device 800 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the methods described above.

[0135] In an exemplary embodiment, a non-volatile computer-readable storage medium is also provided, such as a memory 804 including computer program instructions that can be executed by a processor 820 of an electronic device 800 to perform the above-described method.

[0136] Figure 11 A block diagram of an electronic device 1900 according to an embodiment of the present disclosure is shown. For example, the electronic device 1900 may be provided as a server. (Refer to...) Figure 11 The electronic device 1900 includes a processing component 1922, which further includes one or more processors, and memory resources represented by memory 1932 for storing instructions, such as application programs, that can be executed by the processing component 1922. The application programs stored in memory 1932 may include one or more modules, each corresponding to a set of instructions. Furthermore, the processing component 1922 is configured to execute instructions to perform the methods described above.

[0137] Electronic device 1900 may also include a power supply component 1926 configured to perform power management of electronic device 1900, a wired or wireless network interface 1950 configured to connect electronic device 1900 to a network, and an input / output interface 1958. Electronic device 1900 can operate on an operating system, such as Windows Server, stored in memory 1932. TM Mac OS X TM Unix TM Linux TM FreeBSD TM Or similar.

[0138] In an exemplary embodiment, a non-volatile computer-readable storage medium is also provided, such as a memory 1932 including computer program instructions that can be executed by a processing component 1922 of an electronic device 1900 to perform the above-described method.

[0139] This disclosure can be a system, method, and / or computer program product. A computer program product may include a computer-readable storage medium having computer-readable program instructions loaded thereon for causing a processor to implement various aspects of this disclosure.

[0140] Computer-readable storage media can be tangible devices capable of holding and storing instructions for use by an instruction execution device. Computer-readable storage media can be, for example—but not limited to—electrical storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination thereof. More specific examples (a non-exhaustive list) of computer-readable storage media include: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disc read-only memory (CD-ROM), digital multifunction disc (DVD), memory sticks, floppy disks, mechanical encoding devices, such as punch cards or recessed protrusions storing instructions thereon, and any suitable combination thereof. The computer-readable storage media used herein are not to be construed as transient signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses through fiber optic cables), or electrical signals transmitted through wires.

[0141] The computer-readable program instructions described herein can be downloaded from computer-readable storage media to various computing / processing devices, or downloaded via a network, such as the Internet, local area network, wide area network, and / or wireless network, to an external computer or external storage device. The network may include copper transmission cables, fiber optic transmission, wireless transmission, routers, firewalls, switches, gateway computers, and / or edge servers. A network adapter card or network interface in each computing / processing device receives the computer-readable program instructions from the network and forwards them to the computer-readable storage media in the respective computing / processing device.

[0142] Computer program instructions used to perform the operations of this disclosure may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, status setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Smalltalk, C++, etc., and conventional procedural programming languages ​​such as the "C" language or similar programming languages. The computer-readable program instructions may execute entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or may be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, electronic circuitry, such as programmable logic circuitry, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), is personalized by utilizing the status information of the computer-readable program instructions to implement various aspects of this disclosure.

[0143] Various aspects of this disclosure are described herein with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer-readable program instructions.

[0144] These computer-readable program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that, when executed by the processor of the computer or other programmable data processing apparatus, they create means for implementing the functions / actions specified in one or more blocks of the flowchart and / or block diagram. These computer-readable program instructions can also be stored in a computer-readable storage medium that causes a computer, programmable data processing apparatus, and / or other device to operate in a particular manner; thus, the computer-readable medium storing the instructions comprises an article of manufacture that includes instructions for implementing aspects of the functions / actions specified in one or more blocks of the flowchart and / or block diagram.

[0145] Computer-readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable data processing apparatus, or other device to produce a computer-implemented process, thereby causing the instructions executed on the computer, other programmable data processing apparatus, or other device to perform the functions / actions specified in one or more boxes of a flowchart and / or block diagram.

[0146] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of an instruction containing one or more executable instructions for implementing a specified logical function. In some alternative implementations, the functions marked in the blocks may occur in a different order than those shown in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0147] The computer program product can be implemented specifically through hardware, software, or a combination thereof. In one alternative embodiment, the computer program product is specifically embodied in a computer storage medium; in another alternative embodiment, the computer program product is specifically embodied in a software product, such as a software development kit (SDK), etc.

[0148] The various embodiments of this disclosure have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen to best explain the principles, practical application, or improvement of the technology in the market, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A method of quantitative measurement of near field electric field, characterized by, The method comprises: obtaining a first linear relationship between a first incident electric field and a first near-field electric field generated by a first measurement region of a sample to be measured based on the first incident electric field; obtaining an instrument constant of the scanning near-field optical microscope, the instrument constant being used to indicate a difference between a measured value and a simulated value of a near-field electric field of the sample to be measured with the same dielectric constant; obtaining a first linear coefficient of any measurement point on the sample to be measured according to the instrument constant and the first linear relationship, the first linear coefficient being used to indicate a multiple relationship between a second incident electric field and a second near-field electric field generated by the measurement point based on the second incident electric field; obtaining a reconstructed near-field electric field of the measurement point under an actual incident electric field incident on the sample to be measured as a quantitative measurement result of the near-field electric field of the measurement point according to the actual incident electric field and the first linear coefficient of the measurement point; Before the obtaining of the first linear relationship between the first incident electric field and the first near-field electric field, the method further comprises: centering on a center point of a geometric figure formed by connecting lines of centers of each pattern of the sample to be measured, constructing a minimum region containing the first near-field electric field, and taking a region where the minimum region is located as the first measurement region; wherein the first measurement region does not contain a region where a probe of the scanning near-field optical microscope is coupled with an edge of the sample to be measured; the scanning incident electric field of the scanning near-field optical microscope is normally incident from the bottom of the sample.

2. The method of claim 1, wherein, The obtaining of the instrument constant of the scanning near-field optical microscope comprises: obtaining a second linear relationship between a third incident electric field and a third near-field electric field generated by a second measurement region of a standard sample based on the third incident electric field; obtaining a third linear relationship between a simulated incident electric field and a fourth near-field electric field simulatedly generated by the second measurement region based on the simulated incident electric field; obtaining the instrument constant according to the second linear relationship and the third linear relationship; the shape of the standard sample is a cylinder, and before the obtaining of the second linear relationship between the third incident electric field and the third near-field electric field, the method further comprises: centering on a center of the standard sample, constructing a minimum circle containing the third near-field electric field, and taking a region where the minimum circle is located as the second measurement region; wherein the second measurement region does not contain a region where a probe of the scanning near-field optical microscope is coupled with an edge of the standard sample.

3. The method of claim 2, wherein, The obtaining of the first linear relationship between the first incident electric field and the first near-field electric field comprises: obtaining the first near-field electric field generated by the first measurement region based on at least two first incident electric fields respectively; determining the first linear relationship according to the first incident electric field and the first near-field electric field; The obtaining of the second linear relationship between the third incident electric field and the third near-field electric field comprises: obtaining the third near-field electric field generated by the second measurement region based on at least two third incident electric fields respectively; determining the second linear relationship according to the third incident electric field and the third near-field electric field.

4. The method of claim 1, wherein, The first linear coefficient of any to-be-measured point on the to-be-measured sample is obtained according to the instrument constant and the first linear relationship, and the first linear coefficient includes: The second near-field electric field generated by the to-be-measured point based on the second incident electric field is obtained; The first linear coefficient is obtained according to the second incident electric field, the second near-field electric field, the instrument constant and the first linear relationship.

5. A near field electric field quantitative measurement device characterized by comprising: The method comprises the steps of: The first linear relationship between the first incident electric field and the first near-field electric field is obtained by a first linear relationship obtaining module, wherein the first near-field electric field is generated by a first measurement region of a to-be-measured sample based on the first incident electric field; An instrument constant of a scanning near-field optical microscope is obtained by an instrument constant obtaining module, wherein the instrument constant is used to indicate the difference between a measured value and a simulated value of the near-field electric field of the to-be-measured sample with the same dielectric constant by the scanning near-field optical microscope; A first linear coefficient of any to-be-measured point on the to-be-measured sample is obtained according to the instrument constant and the first linear relationship by a first linear coefficient obtaining module, wherein the first linear coefficient is used to indicate the multiple relationship between the second incident electric field and the second near-field electric field, and the second near-field electric field is generated by the to-be-measured point based on the second incident electric field; A reconstructed near-field electric field of the to-be-measured point under the actual incident electric field is obtained as the quantitative measurement result of the near-field electric field of the to-be-measured point according to the actual incident electric field incident to the to-be-measured sample and the first linear coefficient of the to-be-measured point by a reconstructed near-field electric field obtaining module; The device further comprises a first measurement region determining module, which is used to, before obtaining the first linear relationship between the first incident electric field and the first near-field electric field, construct a minimum region containing the first near-field electric field with the center point of a geometric figure formed by the connecting lines of the centers of each pattern of the to-be-measured sample as the center, and take the region where the minimum region is located as the first measurement region; wherein the first measurement region does not contain the region where the probe of the scanning near-field optical microscope is coupled with the edge of the to-be-measured sample. The scanning incident electric field of the scanning near-field optical microscope is normally incident from the bottom of the sample.

6. An electronic device, comprising: The method comprises the steps of: A processor; A memory for storing processor-executable instructions; The processor is configured to implement the method of any one of claims 1 to 4 when executing the instructions stored in the memory.

7. A non-transitory computer readable storage medium having stored thereon computer program instructions, wherein, The computer program instructions are executed by the processor to implement the method of any one of claims 1 to 4.

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