Infrared detector and preparation method thereof

Abstract

The application provides an infrared detector and a preparation method thereof. The infrared detector is generally in the form of a thin film, has low quantum efficiency, low response intensity and relatively low sensitivity. The infrared detector of the application comprises a P-type nanocolumn array layer and an inorganic n-type porous thin film layer, the inorganic n-type porous thin film layer is nested with the P-type nanocolumn array layer, and an organic-inorganic hybrid structure is formed. Thus, the response range of the detector is expanded by using the enhancement effect of nanostructure and organic-inorganic hybridization, a PN junction is formed, a strong built-in electric field is constructed, and the response performance of the infrared detector is improved. Finally, the working efficiency of the infrared detector is improved. The application further provides a preparation method of the infrared detector.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor preparation, and particularly relates to an infrared detector and a preparation method thereof. BACKGROUND

[0002] With the infrared photoelectric detector showing more and more important application potential in the fields of medical diagnosis, optical communication, resource exploration and the like, the related technology has also been rapidly developed. However, the infrared detection materials with wide detection range, high response rate and high detection rate, such as binary semiconductor of III-V group, can only absorb photons with energy matching the band gap, and need complex manufacturing process and high-cost low-noise operation cooling mechanism. In addition, the demand for miniaturization, portability, flexibility, low cost and wide wavelength response of various electronic devices in modern society is also growing. However, the traditional semiconductor materials generally do not have flexibility and are easy to be damaged or fail during stretching.

[0003] Therefore, it is necessary to develop a new infrared detector with a wider detection range. SUMMARY

[0004] The present application aims to at least solve one of the above technical problems in the prior art. To this end, the present application provides an infrared detector, which is a flexible infrared detector and has good response in the range of 885-1550 nm, so that the detector has a relatively wide detection range.

[0005] The present application also provides a preparation method of the infrared detector.

[0006] The first aspect of the present application provides an infrared detector, comprising an organic substrate layer, a P electrode layer, a P-type nanorod array layer, an inorganic n-type porous film layer and an n electrode arranged in sequence; the inorganic n-type porous film layer and the P-type nanorod array layer are nested with each other, the surface of the inorganic n-type porous film layer is dispersed with quantum dots, and the P-type nanorod array layer is a tris(4-carbazoyl-9-ylphenyl) amine (TCTA) nanorod array layer.

[0007] One of the technical solutions of the present application related to the infrared detector has at least the following beneficial effects:

[0008] The organic infrared detector is usually in the form of a thin film, has low quantum efficiency, low response intensity and relatively low sensitivity. The infrared detector of the present application comprises a P-type nanocolumn array layer and an inorganic n-type porous thin film layer, the inorganic n-type porous thin film layer is nested with the P-type nanocolumn array layer to form an organic-inorganic hybrid structure, thus, the response range of the detector is expanded by using the nanostructure and the enhanced effect of the organic-inorganic hybrid, a PN junction is formed to construct a strong built-in electric field, and the response sensitivity of the infrared detector is improved by using the fast response characteristics of the inorganic photosensitive material. Finally, the working efficiency of the infrared detector is improved.

[0009] In the infrared detector of the present application, the organic nanometer / micrometer column array can play a role of an antireflection film to improve the absorption effect of the device on the incident light.

[0010] According to some embodiments of the present application, the organic substrate layer comprises one of a polyethylene terephthalate layer, a polyvinylidene fluoride layer and a polydimethylsiloxane layer.

[0011] The organic substrate layer comprises one of a polyethylene terephthalate layer, a polyvinylidene fluoride layer and a polydimethylsiloxane layer, and the substrate material is a flexible material which can be bent, stretched and even twisted, thus, the infrared detector is a flexible detector which is not easy to be damaged or fail during stretching and is suitable for various miniaturized electronic devices.

[0012] According to some embodiments of the present application, the tris(4-carbazoyl-9-ylphenyl)amine can also be referred to as 4,4',4"-tris(carbazol-9-yl)triphenylamine, and the CAS number is 139092-78-7.

[0013] According to some embodiments of the present application, the P electrode layer comprises a Ti electrode layer.

[0014] The Ti electrode layer serves as a lower electrode to collect photocurrent and reflect incident light to enhance the absorption effect.

[0015] According to some embodiments of the present application, the thickness of the P electrode layer is 120-200 nm.

[0016] If the thickness of the P electrode layer is less than 120 nm, the current transmission efficiency will be slow, and if the thickness is greater than 200 nm, unnecessary waste will be caused, thus, the thickness of 120-200 nm is a suitable range for the P electrode layer.

[0017] According to some embodiments of the present application, the thickness of the P-type nanocolumn array layer is 300-800 nm.

[0018] The thickness of the P-type nano-pillar array layer is less than 300 nm, which results in low efficiency, and greater than 800 nm, which results in long filling time and is not conducive to the transmission of photo-generated carriers, and thus, 300 nm to 800 nm is a suitable thickness range of the P-type nano-pillar array layer.

[0019] According to some embodiments of the present application, the inorganic n-type porous thin film layer comprises a Mn-Co-Ni-O thin film layer.

[0020] The Mn-Co-Ni-O thin film is an excellent infrared light-sensitive material, which can maintain a stable working state without cooling. Generally, any one of Mn, Co, Ni and O cannot be missing, otherwise the characteristics of not needing refrigeration will be changed, and the proportion of the three metals Mn, Co and Ni is not fixed and can be controlled as needed.

[0021] The response range of the Mn-Co-Ni-O thin film can be extended from the near-infrared band (about 800 nm) of the Mn-Co-Ni-O thin film to about 1550 nm. The N-type Mn-Co-Ni-O thin film contacts the P-type TATC thin film, and an electric field, i.e., a built-in electric field, is formed near the contact surface. The built-in electric field is conducive to the separation and transmission of photo-generated carriers, and can effectively improve the response performance of the device, including improving the response sensitivity and response intensity.

[0022] According to some embodiments of the present application, the thickness of the Mn-Co-Ni-O thin film layer is 30 nm to 120 nm.

[0023] The thickness of the Mn-Co-Ni-O thin film layer is less than 30 nm, which makes it difficult to play the positive enhancement effect of the inorganic light-sensitive layer, and greater than 120 nm, which makes it difficult to play the enhancement effect of the organic-inorganic hybrid effect, and thus, 30 nm to 120 nm is a suitable thickness range of the Mn-Co-Ni-O thin film layer.

[0024] According to some embodiments of the present application, the inorganic n-type porous thin film layer has a pore size of 400 nm to 1200 nm.

[0025] The inorganic n-type porous thin film layer has a pore size of 400 nm to 1200 nm, a pore size less than 400 nm results in n-type film closure, and a pore size greater than 1200 nm results in subsequent organic nano-pillars being too large, which reduces the sensitivity of the device, and thus, 400 nm to 1200 nm is a suitable pore size range of the inorganic n-type porous thin film layer.

[0026] According to some embodiments of the present application, the inorganic n-type porous thin film layer has a center-to-center distance of 800 nm to 2500 nm.

[0027] The center distance of the inorganic n-type porous thin film layer is 800-2500 nm, and the center distance less than 800 nm will result in difficulty in forming holes in the inorganic thin film, and the center distance greater than 2500 nm will result in a long time required for the subsequent organic to fill the holes, thus, 800-2500 nm is a suitable center distance range of the inorganic n-type porous thin film layer.

[0028] The center distance refers to the distance between the centers of adjacent holes.

[0029] According to some embodiments of the present application, the n-electrode comprises an Ag electrode.

[0030] The Ag electrode serves to collect photoelectric current.

[0031] According to some embodiments of the present application, the quantum dots comprise at least one of Ag quantum dots, Pt quantum dots, Au quantum dots and Al quantum dots.

[0032] Among the Ag quantum dots, Pt quantum dots, Au quantum dots and Al quantum dots, the Pt quantum dots and Au quantum dots can also be prepared by photocatalysis, and comparedly, the Ag quantum dots have low cost and high cost performance.

[0033] According to some embodiments of the present application, the particle size of the quantum dots is 1-5 nm.

[0034] The particle size of the quantum dots is 1-5 nm, and the particle size less than 1 nm will result in difficulty in preparation, and the particle size greater than 5 nm will result in a decrease in the enhancement effect, thus, 1-5 nm is a suitable particle size range of the quantum dots.

[0035] The second aspect of the present application provides a method for preparing the infrared detector, comprising the following steps:

[0036] S1: forming the inorganic n-type porous thin film layer on the surface of the AAO template containing a silicon substrate by magnetron sputtering;

[0037] S2: performing evaporation on the surface of the inorganic n-type porous thin film layer to sequentially form the P-type nanorod array layer and the P-electrode layer;

[0038] S3: coating the organic substrate layer on the surface of the P-electrode layer;

[0039] S4: removing the AAO template by etching with an alkaline solution and peeling off the silicon substrate;

[0040] S5: immersing the composite material obtained in step S4 in a quantum dot solution in a darkroom, irradiating with blue light, and growing quantum dots on the surface of the inorganic n-type porous thin film layer;

[0041] S6: coating a conductive slurry on the surface of the inorganic n-type porous thin film layer, and forming the n electrode after drying to obtain the infrared detector.

[0042] The present application relates to a technical solution in a method for preparing an infrared detector, and at least has the following beneficial effects:

[0043] In the method for preparing the infrared detector, the inorganic n-type porous thin film layer is first formed on the surface of the AAO template containing a silicon substrate through magnetron sputtering, then the P-type nanocolumn array layer and the P electrode layer are sequentially formed on the surface of the inorganic n-type porous thin film layer through evaporation, the organic substrate layer is then formed on the surface of the P electrode layer, the AAO template is removed by etching with an alkaline solution, and the silicon substrate is peeled off, and then the composite material obtained in step S4 is soaked in a quantum dot solution in a darkroom, blue light is irradiated, and the quantum dots are grown on the surface of the inorganic n-type porous thin film layer. Finally, a conductive slurry is coated on the surface of the inorganic n-type porous thin film layer, and the n electrode is formed after drying to obtain the infrared detector. When nested, the organic photosensitive material P-type nanocolumn array layer and the inorganic nanophotosensitive material inorganic n-type porous thin film layer can form an organic-inorganic hybrid structure, expand the response range of the detector, form a PN junction at the same time, build a strong built-in electric field, and improve the response performance of the device.

[0044] According to some embodiments of the present application, the pore diameter of the AAO template is 200-1200 nm.

[0045] The pore diameter of the AAO template is 200-1200 nm. If the pore diameter of the AAO template is less than 200 nm, it will be difficult to form holes in the subsequent inorganic thin film. If the pore diameter of the AAO template is greater than 1200 nm, it will take a long time for the subsequent organic material to fill the holes. Therefore, 200-1200 nm is a suitable pore diameter range of the AAO template.

[0046] According to some embodiments of the present application, the center distance of the AAO template is 800-2500 nm.

[0047] The center distance of the AAO template is 800-2500 nm. If the center distance of the AAO template is less than 800 nm, the AAO will be easily broken. If the center distance of the AAO template is greater than 2500 nm, it will be difficult to fill the subsequent organic material. Therefore, 800-2500 nm is a suitable center distance range of the AAO template.

[0048] The center distance of the AAO template specifically refers to the distance between the centers of adjacent holes.

[0049] According to some embodiments of the present application, the method for preparing the AAO template containing a silicon substrate comprises: preparing a 150-300 nm metal Al single-crystal epitaxial film on the silicon substrate by a molecular beam epitaxy method, wherein the temperature of the substrate is 700-900 ℃, and the evaporation temperature of the Al source is 90-1100 ℃; and during the preparation, a crystal oscillator instrument is used to monitor the thickness of the Al single-crystal film.

[0050] The AAO prepared by using the Al single-crystal film can obtain a large-area uniform porous template, and the single-crystal AAO is beneficial to improve the preferred orientation of the Mn-Co-Ni-O film and even realize single orientation, thereby improving the photoelectric response performance of the film.

[0051] According to some embodiments of the present application, in step S4, the alkaline solution comprises a NaOH solution.

[0052] According to some embodiments of the present application, the concentration of the NaOH solution is 0.5-1.5 mol / L.

[0053] According to some embodiments of the present application, the concentration of the NaOH solution is 1.0 mol / L.

[0054] According to some embodiments of the present application, in step S5, the quantum dot solution comprises a silver nitrate solution.

[0055] According to some embodiments of the present application, in step S6, the conductive paste comprises a silver paste.

[0056] According to some embodiments of the present application, in step S6, the coating method comprises screen printing. BRIEF DESCRIPTION OF DRAWINGS

[0057] Figure 1 is a structural schematic diagram of an infrared detector according to the present application.

[0058] Figure 2 is a diagram of photoelectric response data of the detectors prepared in Example 1, Example 2 and Comparative Example 1.

[0059] REFERENCE SIGNS:

[0060] 1: organic substrate layer;

[0061] 2: P electrode layer;

[0062] 3: P-type nanorod array layer;

[0063] 4: inorganic n-type porous film layer;

[0064] 5: n electrode;

[0065] 6: quantum dot. DETAILED DESCRIPTION

[0066] The following are specific embodiments of the present application, and the technical solutions of the present application are further described in conjunction with the embodiments, but the present application is not limited to these embodiments.

[0067] Reference Figure 1 As shown in the drawings, in some embodiments of the present application, the present application provides an infrared detector, which comprises an organic substrate layer 1, a P electrode layer 2, a P-type nanocolumn array layer 3, an inorganic n-type porous film layer 4 and an n electrode 5 arranged in sequence; the inorganic n-type porous film layer 4 and the P-type nanocolumn array layer 3 are nested with each other, the surface of the inorganic n-type porous film layer 4 is dispersed with quantum dots 6, and the P-type nanocolumn array layer 3 is a tris(4-carbazoyl-9-ylphenyl) amine (TCTA) nanocolumn array layer.

[0068] It can be understood that the infrared detector is usually in the form of a thin film, and has low quantum efficiency, low response intensity and relatively low sensitivity. The infrared detector of the present application contains a P-type nanocolumn array layer and an inorganic n-type porous film layer, the inorganic n-type porous film layer and the P-type nanocolumn array layer are nested with each other to form an organic-inorganic hybrid structure, thereby expanding the response range of the detector by using the enhancement effect of nanostructure and organic-inorganic hybridization, forming a PN junction to build a strong built-in electric field, and improving the response sensitivity of the infrared detector by using the fast response characteristics of inorganic photosensitive materials. Finally, the working efficiency of the infrared detector is improved.

[0069] It can also be understood that in the infrared detector of the present application, the organic nanometer / micrometer column array can play a role of an antireflection film to improve the absorption effect of the device on incident light.

[0070] In some embodiments of the present application, the organic substrate layer comprises one of a polyethylene terephthalate layer, a polyvinylidene fluoride layer and a polydimethylsiloxane layer.

[0071] Specifically, the organic substrate layer comprises one of a polyethylene terephthalate layer, a polyvinylidene fluoride layer and a polydimethylsiloxane layer, and the above substrate material is a flexible material, which can be bent, and even stretched and twisted, thereby the infrared detector is a flexible detector, which is not easy to be damaged or fail during stretching, and is suitable for various miniaturized electronic devices.

[0072] In some embodiments of the present application, tris(4-carbazoyl-9-ylphenyl) amine can also be referred to as 4,4',4"-tris(carbazol-9-yl) triphenylamine, and the CAS number is 139092-78-7.

[0073] In some embodiments of the present application, the P electrode layer comprises a Ti electrode layer.

[0074] The Ti electrode layer serves as a lower electrode to collect photoelectric current and reflect incident light to enhance absorption effect.

[0075] In some embodiments of the present application, the thickness of the P electrode layer is 120-200 nm.

[0076] A thickness of the P electrode layer less than 120 nm will result in slow current transmission efficiency, and a thickness greater than 200 nm will result in unnecessary waste. Therefore, 120-200 nm is a suitable thickness range of the P electrode layer.

[0077] In some embodiments of the present application, the thickness of the P-type nanorod array layer is 300-800 nm.

[0078] A thickness of the P-type nanorod array layer less than 300 nm will result in low efficiency, and a thickness greater than 800 nm will result in long filling time and is not conducive to the transmission of photo-generated carriers. Therefore, 300-800 nm is a suitable thickness range of the P-type nanorod array layer.

[0079] In some embodiments of the present application, the inorganic N-type porous thin film layer comprises a Mn-Co-Ni-O thin film layer.

[0080] It should be noted that the Mn-Co-Ni-O thin film is an excellent infrared light-sensitive material that can maintain a stable working state without cooling. Generally, any one of Mn, Co, Ni, and O cannot be missing, otherwise the characteristics of not needing refrigeration will be changed. The ratio of the three metals Mn, Co, and Ni is not fixed and can be adjusted as needed.

[0081] Further, the response range of the Mn-Co-Ni-O thin film can be extended from the near-infrared band (about 800 nm) of the Mn-Co-Ni-O thin film to about 1550 nm. The N-type Mn-Co-Ni-O thin film contacts the P-type TATC thin film, and an electric field, i.e., an internal built-in electric field, is formed near the contact surface. The internal built-in electric field is conducive to the separation and transmission of photo-generated carriers, and can effectively improve the response performance of the device, including improving the response sensitivity and response intensity.

[0082] In some embodiments of the present application, the thickness of the Mn-Co-Ni-O thin film layer is 30-120 nm.

[0083] It can be understood that a thickness of the Mn-Co-Ni-O thin film layer less than 30 nm will result in difficulty in exerting the positive enhancement effect of the inorganic light-sensitive layer, and a thickness greater than 120 nm will result in difficulty in exerting the enhancement effect of the organic-inorganic hybrid effect. Therefore, 30-120 nm is a suitable thickness range of the Mn-Co-Ni-O thin film layer.

[0084] In some embodiments of the present application, the inorganic n-type porous thin film layer has a pore diameter of 400-1200 nm.

[0085] The inorganic n-type porous thin film layer has a pore diameter of 400-1200 nm. A pore diameter less than 400 nm will result in the n-type thin film being closed, and a pore diameter greater than 1200 nm will result in the subsequent organic nanocolumns being too large, reducing the sensitivity of the device. Thus, 400-1200 nm is an appropriate pore diameter range for the inorganic n-type porous thin film layer.

[0086] In some embodiments of the present application, the inorganic n-type porous thin film layer has a center-to-center spacing of 800-2500 nm.

[0087] The inorganic n-type porous thin film layer has a center-to-center spacing of 800-2500 nm. A center-to-center spacing less than 800 nm will result in the inorganic thin film being difficult to form pores, and a center-to-center spacing greater than 2500 nm will result in the subsequent organic needing a long time to fill the pores. Thus, 800-2500 nm is an appropriate center-to-center spacing range for the inorganic n-type porous thin film layer.

[0088] It should be noted that the center-to-center spacing of the inorganic n-type porous thin film layer refers to the distance between the centers of adjacent pores.

[0089] In some embodiments of the present application, the n-electrode comprises an Ag electrode.

[0090] The Ag electrode functions to collect the photocurrent.

[0091] The quantum dots of the inorganic n-type porous thin film layer comprise at least one of Ag quantum dots, Pt quantum dots, Au quantum dots, and Al quantum dots.

[0092] Among the Ag quantum dots, Pt quantum dots, Au quantum dots, and Al quantum dots, the Pt quantum dots and Au quantum dots can also be prepared by photocatalysis. In comparison, the Ag quantum dots have a lower cost and a high cost performance.

[0093] The quantum dots of the inorganic n-type porous thin film layer have a particle size of 1-5 nm.

[0094] The quantum dots have a particle size of 1-5 nm. A particle size less than 1 nm will result in difficulty in preparation, and a particle size greater than 5 nm will result in a reduced enhancement effect. Thus, 1-5 nm is an appropriate particle size range for the quantum dots.

[0095] In some other embodiments of the present application, the present application provides a method for preparing an infrared detector, comprising the following steps:

[0096] S1: forming an inorganic n-type porous thin film layer on the surface of an AAO template containing a silicon substrate by magnetron sputtering;

[0097] S2: forming a P-type nano pillar array layer and a P electrode layer on the surface of the inorganic n-type porous thin film layer by evaporation;

[0098] S3: forming an organic substrate layer on the surface of the P electrode layer;

[0099] S4: removing the AAO template by etching with an alkaline solution and peeling off the silicon substrate;

[0100] S5: growing quantum dots on the surface of the inorganic n-type porous thin film layer by immersing the composite material obtained in step S4 in a quantum dot solution and irradiating blue light in a darkroom;

[0101] S6: forming an n electrode on the surface of the inorganic n-type porous thin film layer by coating a conductive slurry, and obtaining an infrared detector after drying.

[0102] It can be understood that, in the preparation method of the infrared detector, the inorganic n-type porous thin film layer is first formed on the surface of the AAO template containing the silicon substrate by magnetron sputtering, then the P-type nano pillar array layer and the P electrode layer are formed on the surface of the inorganic n-type porous thin film layer by evaporation, then the organic substrate layer is formed on the surface of the P electrode layer, then the AAO template is removed by etching with an alkaline solution and the silicon substrate is peeled off, then the composite material obtained in step S4 is immersed in a quantum dot solution in a darkroom, blue light is irradiated, and quantum dots are grown on the surface of the inorganic n-type porous thin film layer, and finally the n electrode is formed on the surface of the inorganic n-type porous thin film layer by coating a conductive slurry, and the infrared detector is obtained after drying. When nested, the organic photosensitive material P-type nano pillar array layer and the inorganic nano photosensitive material inorganic n-type porous thin film layer can form an organic-inorganic hybrid structure, expand the response range of the detector, form a PN junction at the same time, build a strong built-in electric field, and improve the response performance of the device.

[0103] In some embodiments of the present application, the pore diameter of the AAO template is 200nm-1200nm.

[0104] If the pore diameter of the AAO template is less than 200nm, it will be difficult to form holes in the subsequent inorganic thin film, and if the pore diameter of the AAO template is greater than 1200nm, it will take a long time for the subsequent organic material to fill the holes. Therefore, 200nm-1200nm is a suitable pore diameter range of the AAO template.

[0105] In some embodiments of the present application, the center distance of the AAO template is 800nm-2500nm.

[0106] The center distance of the AAO template is 800nm-2500nm. If the center distance of the AAO template is less than 800nm, the AAO template is easy to be broken. If the center distance of the AAO template is greater than 2500nm, it is not easy to fill the subsequent organic matter. Therefore, 800nm-2500nm is the appropriate center distance range of the AAO template.

[0107] It should be noted that the center distance of the AAO template refers to the distance between the centers of adjacent holes.

[0108] In some embodiments of the present application, the preparation method of the AAO template containing a silicon substrate is as follows: a 150nm-300nm metal Al single crystal epitaxial film is prepared on the silicon substrate by a molecular beam epitaxy method, the temperature of the substrate is 700℃-900℃, the evaporation temperature of the Al source is 90℃-1100℃, and the thickness of the Al single crystal film is monitored by a crystal oscillator during the preparation process.

[0109] The AAO prepared by the Al single crystal film can obtain a large-area uniform porous template. In addition, the single crystal AAO is beneficial to improve the preferred orientation of the Mn-Co-Ni-O film, and even realize single orientation, thereby improving the photoelectric response performance of the film.

[0110] In some embodiments of the present application, in step S4, the alkaline solution includes a NaOH solution.

[0111] In some embodiments of the present application, the concentration of the NaOH solution is 0.5mol / L-1.5mol / L.

[0112] In some embodiments of the present application, the concentration of the NaOH solution is 1.0mol / L.

[0113] In some embodiments of the present application, in step S5, the quantum dot solution includes a silver nitrate solution.

[0114] In some embodiments of the present application, in step S6, the conductive paste includes a silver paste.

[0115] In some embodiments of the present application, in step S6, the coating method includes screen printing.

[0116] The technical solutions of the present application will be better understood in combination with the specific embodiments as follows:

[0117] Embodiment 1

[0118] In this embodiment, an infrared detector is prepared, and the preparation process is as follows:

[0119] 1) MBE preparation of 150 nm metal Al single crystal epitaxial film on Si substrate (substrate temperature 700 °C, Al source evaporation temperature 900 °C), using a crystal oscillator to monitor the thickness of the Al single crystal film;

[0120] 2) Anodic oxidation to prepare AAO template (pore diameter 200 nm, center spacing 800 nm)

[0121] 3) Magnetron sputtering of Mn-Co-Ni-O film, 30 nm, forming a regular porous film (pore diameter 200 nm, center spacing 800 nm).

[0122] 4) Evaporating a layer of 300 nm thick infrared organic film on the porous Mn-Co-Ni-O film, followed by evaporating a 120 nm Ti film, and spin coating a PET insulating organic substrate. The infrared organic film is p-type tris(4-carbazoyl-9-ylphenyl) amine (TCTA).

[0123] 5) Using 1 mol / L sodium hydroxide solution to etch the AAO film, stripping the Si substrate, and obtaining a nested organic-inorganic nm composite material.

[0124] 6) In a darkroom, the nested organic-inorganic nm composite material is immersed in a silver nitrate solution, and blue light is used to irradiate the composite material to grow 1 nm diameter Ag quantum dots.

[0125] 7) Regular conductive silver paste is applied on the composite material using screen printing, and vacuum drying is used as an electrode, thereby obtaining a structurally complete flexible infrared detector.

[0126] Example 2

[0127] This example prepared an infrared detector, and the preparation process was as follows:

[0128] The preparation process of the flexible infrared detector based on the organic-inorganic nm composite material is as follows:

[0129] 1) MBE preparation of 300 nm metal Al single crystal epitaxial film on Si substrate (substrate temperature 900 °C, Al source evaporation temperature 1100 °C), using a crystal oscillator to monitor the thickness of the Al single crystal film;

[0130] 2) Anodic oxidation to prepare AAO template (pore diameter 1200 nm, center spacing 2500 nm)

[0131] 3) Magnetron sputtering of Mn-Co-Ni-O film, 30-120 nm, forming a regular porous film (pore diameter 1200 nm, center spacing 2500 nm).

[0132] 4) On the porous Mn-Co-Ni-O film, an infrared organic film with a thickness of 800 nm is evaporated, followed by evaporation of a 120 nm Ti film, and spin coating of a PVDF insulating organic substrate. The infrared organic film is p-type tris(4-carbazoyl-9-ylphenyl)amine (TCTA).

[0133] 5) The AAO film is etched away using a 1 mol / L sodium hydroxide solution, the Si substrate is peeled off, and an infrared organic nm wire array nested Mn-Co-Ni-O porous film composite (referred to as an organic-inorganic nm composite) is obtained.

[0134] 6) In a darkroom, the organic-inorganic nm composite is immersed in a silver nitrate solution, and a blue light is used to irradiate the composite to grow Ag quantum dots with a diameter of 5 nm.

[0135] 7) A regular conductive silver paste is applied on the composite using screen printing, and vacuum drying is performed as an electrode, so that a flexible infrared detector with a complete structure is obtained.

[0136] Comparative Example 1

[0137] A kind of infrared detector is prepared in this comparative example, and the preparation process is as follows:

[0138] The preparation process of the flexible infrared detector based on the organic-inorganic composite is as follows:

[0139] 1) A 300 nm metal Al single crystal epitaxial film is prepared on a Si substrate by MBE (substrate temperature 900 ℃, Al source evaporation temperature 1100 ℃), and the thickness of the Al single crystal film is monitored using a crystal oscillator instrument.

[0140] 2) An AAO template is prepared by anodic oxidation (pore diameter 1200 nm, center spacing 2500 nm)

[0141] 3) A Mn-Co-Ni-O film is magnetron sputtered, 30-120 nm, to form a regular porous film (pore diameter 1200 nm, center spacing 2500 nm).

[0142] 4) On the porous Mn-Co-Ni-O film, an infrared organic film with a thickness of 800 nm is evaporated, followed by evaporation of a 120 nm Ti film, and spin coating of a PVDF insulating organic substrate. The infrared organic film is p-type tris(4-carbazoyl-9-ylphenyl)amine (TCTA).

[0143] 5) The AAO film is etched away using a 1 mol / L sodium hydroxide solution, the Si substrate is peeled off, and an infrared organic nm wire array nested Mn-Co-Ni-O porous film composite (referred to as an organic-inorganic nm composite) is obtained.

[0144] 6) On the surface of the composite, regular conductive silver paste is coated by silk screen printing, and vacuum drying is used as electrode, so that a flexible infrared detector with complete structure is obtained.

[0145] The performance of the infrared detectors prepared by the examples and the comparative examples is tested. The results are shown in Table 1 and Figure 2 .

[0146] Table 1 Performance test results of infrared detectors

[0147] Number Response sensitivity Response intensity Example 1 0.0306s 250 μA Example 2 0.0169s 140 μA Comparative Example 1 0.1336s 30 μA

[0148] According to Table 1 and Figure 2 , it can be seen that the infrared detector prepared by the present application has better corresponding sensitivity and response intensity.

[0149] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. An infrared detector, characterized by The organic-inorganic hybrid structure comprises an organic substrate layer, a P electrode layer, a P-type nanopillar array layer, an inorganic n-type porous thin film layer and an n electrode arranged in sequence; the inorganic n-type porous thin film layer and the P-type nanopillar array layer are nested with each other to form an organic-inorganic hybrid structure The inorganic hybrid structure has quantum dots dispersed on the surface of the inorganic n-type porous thin film layer, the P-type nanopillar array layer is a tris(4-carbazoyl-9-ylphenyl) amine nanopillar array layer, the inorganic n-type porous thin film layer comprises a Mn-Co-Ni-O thin film layer, and the thickness of the Mn-Co-Ni-O thin film layer is 30 nm to 120 nm.

2. The infrared detector of claim 1, wherein, The organic substrate layer comprises one of a polyethylene terephthalate layer, a polyvinylidene fluoride layer and a polydimethylsiloxane layer.

3. The infrared detector of claim 1, wherein, The P-type nanopillar array layer has a thickness of 300nm-800nm.

4. The infrared detector of claim 1, wherein, The inorganic n-type porous film layer has a pore diameter of 400nm-1200nm.

5. The infrared detector of claim 1, wherein, The inorganic n-type porous film layer has a center spacing of 800nm-2500nm.

6. The infrared detector according to any one of claims 1 to 5, characterized in that The quantum dots comprise at least one of Ag quantum dots, Pt quantum dots, Au quantum dots and Al quantum dots.

7. The infrared detector according to any one of claims 1 to 5, characterized in that The quantum dots have a particle size of 1nm-5nm.

8. A method of manufacturing an infrared detector as claimed in any one of the claims 1 to 7, characterized in that, The method comprises the following steps: S1: forming the inorganic n-type porous film layer on the surface of the AAO template containing a silicon substrate by magnetron sputtering; S2: forming the P-type nanopillar array layer and the P electrode layer in sequence on the surface of the inorganic n-type porous film layer by evaporation; S3: forming the organic substrate layer on the surface of the P electrode layer by coating; S4: removing the AAO template by etching with an alkaline solution and peeling off the silicon substrate; S5: immersing the composite material obtained in step S4 in a quantum dot solution in a darkroom, irradiating with blue light, and growing quantum dots on the surface of the inorganic n-type porous film layer; S6: forming the n electrode by coating a conductive slurry on the surface of the inorganic n-type porous film layer and drying, to obtain the infrared detector.

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