Semiconductor manufacturing equipment and method for removing deposits in a chamber of semiconductor manufacturing equipment

Abstract

The present application discloses a semiconductor manufacturing apparatus, comprising: a chamber including an inner chamber, an outer chamber, and a channel connecting the inner chamber and the outer chamber, the channel being located between the inner chamber and the side wall of the chamber; one or more electrodes disposed in the side wall of the chamber for ionizing a processing gas from the inner chamber to generate a plasma for removing deposits generated in the inner chamber. The technical solution proposed by the present application sets an electrode in the chamber of the semiconductor manufacturing apparatus, the electrode excites the processing gas to generate a plasma, and the plasma etches and cleans the deposits in the chamber, alleviating the adverse effects brought by the traditional scraping and removing method to the equipment, the working environment and the personnel.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor device manufacturing, and in particular, to cleaning techniques and equipment in the semiconductor manufacturing process. Background Art

[0002] During the long-term operation of semiconductor production equipment, a large amount of polymer deposits will accumulate on the side walls of the equipment chamber. When using the sediment scraping method for cleaning, a large amount of dust particles will be generated. A large number of small dust particles not only affect the subsequent restart production, but may also affect the gas circulation treatment system in the production workshop. In addition, if the operator near the production equipment inhales the dust particles, it will also affect the human body. In the traditional sediment scraping method, the long-term use of the scraper may cause the coating of the equipment chamber to become thinner or scratched, thereby damaging the equipment operating environment. Therefore, how to clean the deposits on the inner wall of the semiconductor manufacturing equipment chamber, especially with high efficiency and high precision, is an urgent problem to be solved currently. Summary of the Invention

[0003] In view of this, the purpose of this application is to introduce plasma etching and cleaning technologies into semiconductor production equipment to achieve the removal of deposits in the equipment chamber with high precision and high efficiency, so as to avoid the adverse effects caused by the traditional scraping method. Therefore, this application provides a semiconductor manufacturing equipment and a method for removing deposits in the semiconductor manufacturing equipment chamber.

[0004] To solve the above problems, according to the first aspect of this application, a semiconductor manufacturing equipment is provided, including: a chamber, including an inner chamber, an outer chamber, and a channel connecting the inner chamber and the outer chamber, the channel being located between the inner chamber and the chamber side wall; one or more electrodes, disposed in the chamber side wall, for ionizing the processing gas from the inner chamber to generate plasma to remove the deposits generated in the inner chamber.

[0005] According to the second aspect of this application, a method for removing deposits in a semiconductor manufacturing equipment chamber is provided, including: providing the semiconductor manufacturing equipment as described in the above embodiment, introducing a processing gas into the equipment chamber, the processing gas flowing from the inner chamber to the outer chamber through the channel connecting the inner chamber and the outer chamber; outputting a high-frequency signal and a low-frequency signal to one or more electrodes disposed in the chamber side wall, the high-frequency signal being used to ionize the processing gas from the inner chamber to generate plasma, and the low-frequency signal being used to control the plasma to remove the deposits in the chamber.

[0006] The above technical solution of this application has the following technical effects: By generating plasma of the processing gas by setting electrodes in the semiconductor manufacturing equipment chamber, the plasma etches and cleans the deposits in the chamber, alleviating the adverse effects brought by the traditional scraping and removal method to the equipment, the working environment and the personnel. Brief Description of the Drawings

[0007] Figure 1 is a schematic structural diagram of a semiconductor manufacturing apparatus according to an embodiment of the present application;

[0008] Figure 2 is a schematic diagram showing the position of an isolation ring of a semiconductor manufacturing apparatus in a chamber according to an embodiment of the present application;

[0009] Figure 3 is a schematic structural diagram of an isolation ring of a semiconductor manufacturing apparatus according to an embodiment of the present application;

[0010] Figure 4 is a schematic diagram showing the principle of connection of a control device of a semiconductor manufacturing apparatus according to an embodiment of the present application;

[0011] Figure 5 is a schematic flowchart of a method for removing chamber deposits of a semiconductor manufacturing apparatus according to an embodiment of the present application.

[0012] Reference Signs:

[0013] 1: isolation ring; 1-1: opening; 1-2: aperture; 2: electrode; 3: channel; 4: air extraction pump; 5: inner chamber; 6: outer chamber; 7: radio frequency generator; 8: spectrometer; 8-1: spectrometer probe; 9: control device; 10: electrode; 6-1: chamber sidewall; 11: screw; 12: restricting valve; 14: wafer; 20: electrode; 27: matching circuit; 30: electrostatic chuck; 40: edge cooling ring; 60: fixing plate; 70: C-shaped shield; 80: restricting ring; 90: grounding ring; 100: deposit particles. Detailed Description of the Embodiments

[0014] To make the objectives, technical solutions and advantages of the present application clearer and more understandable, the present application will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present application. In addition, in the following descriptions, descriptions of well-known structures and technologies are omitted to avoid unnecessarily obscuring the concepts of the present application.

[0015] In the drawings, a schematic diagram of a layer structure according to an embodiment of the present application is shown. These figures are not drawn to scale, where for the purpose of clarity, some details are enlarged and some details may be omitted. The shapes of various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are only exemplary. In practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art can design regions / layers with different shapes, sizes and relative positions according to actual requirements.

[0016] Obviously, the described embodiments are some, but not all, of the embodiments of this application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts shall fall within the scope of protection of this application.

[0017] Figure 1 It is a schematic structural diagram of a semiconductor manufacturing apparatus according to an embodiment of this application.

[0018] As Figure 1 shown, the chamber of the semiconductor manufacturing apparatus in this embodiment is divided into an inner chamber 5, an outer chamber 6, and a channel 3 connecting the inner chamber and the outer chamber. Among them, the inner chamber 5 is a reaction chamber surrounded by components such as an electrostatic chuck 30, an inner electrode ring 10, an outer electrode ring 20, a C-shaped shroud 70, and an edge cooling ring 40. A fixing plate 60 is used for the inner electrode ring 10 and the outer electrode ring 20. The channel 3 leads the processing gas from the inner chamber 5 to the outer chamber 6, and the channel 3 is located between the inner chamber 5 and the chamber sidewall 6-1. The outer chamber 6 is a space formed by enclosing the sidewall 6-1. One or more electrodes 2 are provided on the sidewall 6-1 to ionize the processing gas from the inner chamber 5 when energized to generate plasma to remove the deposits generated in the inner chamber 5. As Figure 1 shown, the processing gas in the chamber is excited by the strong signal field generated by the electrode 2 to generate plasma. The plasma removes the deposits generated by the reaction in the inner chamber 5. The plasma undergoes physical and chemical reactions with the deposits in the chamber to make the deposits detach.

[0019] It should be noted that in the field of plasma applications, plasma etching and cleaning technologies rely on active particles to bombard the surface to be cleaned on the one hand to make the contaminants detach, and on the other hand, the active particles react with the surface impurities to generate volatile substances to make the contaminants detach. The plasma and the contaminants simultaneously undergo the above physical and chemical reactions. Different signals generated by the electrode 2 can excite different plasmas, and the resulting etching and cleaning effects are also different. Frequencies in the KHz range can excite ultrasonic plasmas, frequencies in the MHz range can excite radio frequency plasmas, and frequencies in the GHz range can excite microwave plasmas. All three plasmas can be used for etching and cleaning. The difference is that the reaction of ultrasonic plasma with the deposits is mainly physical, the reaction of radio frequency plasma with the deposits has both physical and chemical reactions, and the reaction of microwave plasma with the deposits is mainly chemical. In addition, different compositions of the processing gas result in different reactions between the plasma and the deposits. Optionally, the processing gas contains a fluorine-containing component. The signal generated by the electrode 2 ionizes the processing gas to generate fluoride ions. The fluoride ions have strong oxidizing properties and can undergo a violent chemical reaction with the deposits, thereby achieving the effect of etching and cleaning the deposits.

[0020] In an alternative embodiment, the electrode 2 is disposed in the sidewall 6-1 of the chamber and exposed to the process gas in the chamber for removing the deposits adhering to the sidewall 6-1 of the chamber. Since the channel 3 is located between the inner chamber 5 and the sidewall 6-1 of the chamber, the plasma generated in the inner chamber 5 can directly act on the sidewall 6-1 of the chamber to achieve the technical effect of removing deposits.

[0021] In an alternative embodiment, referring to Figure 1 , the semiconductor manufacturing equipment further includes: an isolation ring 1 disposed on the sidewall 6-1 and located in the channel 3 for isolating the contamination of the sidewall 6-1 of the chamber by the deposits coming from the inner chamber 5. The deposits flowing out of the inner chamber 5 cannot directly contact the sidewall 6-1. Therefore, the isolation ring 1 isolates the contamination of the sidewall 6-1 of the chamber by the deposits from the inner chamber. One or more electrodes 2 for generating plasma to remove the deposits adhering to the isolation ring 1; the isolation ring 1 isolates the deposits from the inner chamber 5 on the isolation ring 1, and a large amount of deposits will accumulate on the isolation ring 1. In addition, these deposits can be removed in time by generating plasma.

[0022] Figure 2 FIG. is a schematic diagram of the position of the isolation ring of the semiconductor manufacturing equipment according to the embodiment of the present application in the chamber.

[0023] In an alternative embodiment, referring to Figure 1 and Figure 2 , the isolation ring 1 is a circular ring surrounding the sidewall 6-1 of the chamber, and the shape of the longitudinal section of the isolation ring 1 is a C shape with a shorter upper part and a longer lower part. The upper and lower ends of the C shape surround the process gas flowing out of the inner chamber 5, which can block the diffusion of the deposits in the Figure 1 in the vertical direction, thereby alleviating the contamination of the outer sidewall 6-1 of the chamber by the deposits. The isolation ring 1 is a circular ring surrounding the sidewall 6-1 of the chamber by 360 degrees, thereby alleviating the contamination of the sidewall 6-1 of the chamber by the deposits to the greatest extent.

[0024] Referring to Figure 1 , the longitudinal section of the isolation ring 1 has a height of W, an upper end length of B, and a lower end length of A. Exemplarily, W = 8 cm, B = 7 mm, and A = 15 mm. The purpose of setting the lower end length to be greater than the upper end length is to block the deposit particles 100 from returning to the inner chamber 5 along the channel 3. The reason for the shorter upper end length is to facilitate the disassembly, installation, and maintenance of the C-shaped shield 70. Alternatively, the length of the lower end of the isolation ring 1 is set to be greater than or equal to one of the following distances: the distance from the edge of the inner chamber 5 to the sidewall 6-1, the distance from the C-shaped shield 70 to the sidewall 6-1, the distance from the restriction ring 80 to the sidewall 6-1, and the distance from the ground ring 90 to the sidewall 6-1. Thereby, the polymer particles flowing out of the inner chamber 5 are blocked to the greatest extent, so that the deposits flowing out of the inner chamber 5 fall on the isolation ring 1, and the deposit particles 100 are blocked from returning to the inner chamber 5 along the channel 3.

[0025] In an alternative embodiment, the isolation ring 1 has a yttrium oxide coating. It should be noted that yttrium oxide has very stable chemical properties and excellent resistance to plasma etching. The coating has a good protective effect on the isolation ring 1. The yttrium oxide coating is dense and has a low porosity, and can withstand high temperatures and gas corrosion. Therefore, when the isolation ring 1 is provided with a yttrium oxide coating, during the etching and cleaning of the deposits by the plasma gas, due to the isolation of the yttrium oxide coating, the plasma cannot etch the isolation ring 1, thereby protecting the isolation ring 1.

[0026] In an alternative embodiment, the isolation ring 1 is detachable. As Figure 1 shown, the isolation ring 1 is fixed to the side wall 6-1 by screws 11, and the use of screw connection facilitates the replacement or cleaning of the isolation ring 1.

[0027] Figure 3 is a schematic structural diagram of the isolation ring of the semiconductor manufacturing equipment according to the embodiment of the present application.

[0028] As Figure 2 and Figure 3 shown, an opening 1-1 and an aperture 1-2 are formed on the isolation ring 1. The opening 1-1 penetrates through the isolation ring 1 and the chamber side wall 6-1, and the electrodes 2 are distributed around the isolation ring 1.

[0029] In an alternative embodiment, the isolation ring 1 has an opening for transferring a wafer. Referring to Figure 3 , the isolation ring 1 is a circular ring, and the cross-sectional shape is a C shape. An aperture 1-2 is provided at the opening of the C-shaped isolation ring. When the aperture 1-2 is in an open state, Figure 1 the wafer 14 in

[0030] In an alternative embodiment, referring to Figure 2 and Figure 3 , the isolation ring 1 has a plurality of openings 1-1, and the openings 1-1 include viewing windows to facilitate the observation of the interior of the chamber.

[0031] In an alternative embodiment, referring to Figure 1 , the semiconductor manufacturing equipment further includes a pumping pump 4. The pumping pump 4 is disposed at the bottom of the chamber for pumping away the deposits removed from the side wall of the outer chamber 6 and the isolation ring 1. Referring to Figure 1 , the deposits and the reaction residual gas are pumped by the pump 4 outside the chamber, and a limiting valve 12 is provided at the pump 4 to enable the one-way flow of the deposits.

[0032] Figure 4 is a schematic diagram of the principle of connection of the control device of the semiconductor manufacturing equipment according to the embodiment of the present application.

[0033] As Figure 4 shown, the radio frequency generator 7 is connected to the electrode 2 through the matching circuit 27, and the control device 9 is connected to the spectral analyzer 8 and the radio frequency generator 7.

[0034] In an alternative embodiment, the radio frequency generator 7 is electrically connected to the electrode 2 for providing an oscillating current to the electrode 2. It should be noted that the radio frequency signal is a high-frequency oscillating current, and different oscillation frequencies result in different plasma effects, such as ultrasonic plasma, radio frequency plasma, and microwave plasma. Optionally, the radio frequency generator 7 is a signal generator or a power generator in the field of radio frequency signals. In some embodiments, the power of the radio frequency generator 7 is set to 500 W. Generally speaking, the greater the plasma discharge power, the greater the intensity of etching and cleaning of the deposits. The intensity of etching and cleaning of the deposits can be adjusted by increasing or decreasing the power output by the radio frequency generator. On the other hand, it should also be considered that too strong a power may also etch the components in the chamber. Therefore, the radio frequency generator 7 needs to be adjusted within the power range that protects the components in the chamber.

[0035] Optionally, a matching circuit 27 is also provided between the radio frequency generator 7 and the electrode 2. Referring to Figure 4 , the radio frequency generator 7 is not directly connected to the electrode 2, but is connected through the matching circuit 27. In the field of radio frequency applications, the role of the matching circuit is to reduce the reflected power, so as to maximize the transmitted power.

[0036] In an alternative embodiment, the radio frequency generator 7 generates a high-frequency signal, and the frequency range of the high-frequency signal is 50 MHz - 70 MHz. Exemplarily, the frequency of the high-frequency signal is 60 MHz. The high-frequency signal causes the electrode 2 to excite high-frequency electrons, which collide with the molecules of the processing gas to ionize them to generate a large amount of plasma.

[0037] In an alternative embodiment, the radio frequency generator 7 generates a low-frequency signal, and the frequency range of the low-frequency signal is 1 MHz - 3 MHz. Exemplarily, the frequency of the low-frequency signal is 2 MHz. The low-frequency signal is used to control the electrode 2 to excite low-frequency electrons to drive the already generated plasma to physically bombard the deposits in the area where the electrode 2 is located, including the deposits on the side wall of the outer chamber 6 where the electrode 2 is located and the deposits on the isolation ring 1.

[0038] In an alternative embodiment, referring to Figure 1 and Figure 4 , the semiconductor manufacturing equipment further includes a spectral analyzer 8, which is arranged outside the side wall 6-1 for detecting whether the deposits are cleared. Optionally, when the light intensity of the reaction gas in the plasma detected by the spectral analyzer 8 is stable, it indicates that the deposits have been basically etched clean and the chamber has achieved the purpose of cleanliness.

[0039] In an alternative embodiment, with reference to Figure 1 and Figure 2 , the probe 8-1 of the spectral analyzer 8 passes through the opening 1-1 to detect the light intensity.

[0040] In an alternative embodiment, with reference to Figure 4 , the semiconductor manufacturing equipment further includes a control device 9, which is electrically connected to the radio frequency generator 7 and the spectral analyzer 8 respectively, and is used to control the switch of the radio frequency generator 7 according to the detection result of the spectral analyzer 8. Specifically, the spectral analyzer 8 feeds back the light intensity data of the etched deposit to the control device 9, and the control device 9 adjusts the output of the radio frequency generator 7. The output of the radio frequency generator is directly connected to the electrode 2, and then controls and adjusts the generation of plasma, thus realizing the automatic control of deposit removal.

[0041] In an alternative embodiment, the spectral analyzer 8 is used to detect the light intensity of carbon elements in the chamber. Since most of the deposits are carbides, when the light intensity of carbon elements is lower than a predetermined threshold, for example, when the light intensity of carbon elements is close to 0 or 0, it proves that the deposits have been removed completely. At this time, the control device 9 can turn off the radio frequency generator 7 to stop the plasma cleaning and avoid damage to the wafer or equipment caused by over-etching. On the other hand, if the light intensity of carbon elements detected by the spectral analyzer 8 in the chamber is higher than the predetermined threshold, the radio frequency generator 7 is turned on to output high-frequency and low-frequency signals, so that the electrode 2 ionizes the process gas to generate plasma again and drives the plasma to remove the deposits.

[0042] In an alternative embodiment, the process gas is a gas containing a fluorine-containing component. The signal generated by the electrode 2 ionizes the process gas to generate fluoride ions, and the spectral analyzer 8 is used to detect the light intensity of fluorine elements in the chamber. Exemplarily, fluoride ions are consumed in large amounts during the cleaning process by reacting with the deposits. At this time, the concentration of fluoride ions in the process gas changes. When the deposits are removed completely, the fluoride ions are no longer consumed, and the light intensity of fluorine detected by the spectral analyzer 8 will show a sharp increase, indicating that the deposits have been removed completely. At this time, the control device 9 can turn off the radio frequency generator 7 to stop the plasma cleaning and avoid damage to the wafer or equipment caused by over-etching.

[0043] It should be noted that the spectral analyzer 8 determines the chemical components of substances according to the spectra emitted by elements. Exemplarily, when fluoride ions are consumed in large amounts during the cleaning process, the proportion of fluoride ions in the process gas is greatly reduced, that is, the spectra emitted by fluoride ions are less. The spectral analyzer 8 collects spectral information to determine the components of a certain type of substance in the process gas and feeds back the collected data to the control device 9. The control device 9 serves as the controller, the spectral analyzer 8 serves as the sensor, and the electrode 2 serves as the actuator, thus forming a closed-loop feedback regulation control among the three.

[0044] Figure 5 It is a schematic flow chart of a method for removing chamber deposits of a semiconductor manufacturing equipment according to an embodiment of the present application.

[0045] As Figure 5 shown, an embodiment of the present application provides a method for removing chamber deposits of a semiconductor manufacturing equipment. The following specifically introduces the method steps provided by the embodiment.

[0046] Step S1: Provide the semiconductor manufacturing equipment as described in any of the above embodiments, and introduce a processing gas into the equipment chamber. Specifically, introduce the processing gas into the equipment chamber. The processing gas flows from the inner chamber 5 to the outer chamber 6 through the channel 3 connecting the inner chamber 5 and the outer chamber 6. It should be noted that different processing gases can produce different etching and cleaning processes. For example, if an inert gas such as argon is used, the generated plasma mainly undergoes a physical reaction with the deposits; if an oxygen or fluorine-containing chemically active gas is used, the generated plasma mainly undergoes a chemical reaction with the deposits.

[0047] Step S2: Generate plasma to remove deposits. Specifically, output a high-frequency signal and a low-frequency signal to one or more electrodes 2 provided in the chamber sidewall 6-1. The high-frequency signal is used to ionize the processing gas from the inner chamber 5 to generate plasma, and the low-frequency signal is used to control the plasma to remove the deposits in the chamber. Exemplarily, the electrode 2 is electrically connected to the radio frequency generator 7. Turn on the power of the radio frequency generator 7 and set the power of the radio frequency generator 7 to 500W. The radio frequency generator 7 generates a high-frequency signal and a low-frequency signal. Exemplarily, the frequency range of the high-frequency signal is 50 MHz - 70 MHz, preferably 60 MHz. The high-frequency signal causes the electrode 2 to excite high-frequency electrons, which impact the molecules of the processing gas to ionize and generate a large amount of plasma. Exemplarily, the processing gas contains fluorine, and the high-frequency signal of the radio frequency generator 7 excites the processing gas to generate plasma containing fluorine ions. The frequency range of the low-frequency signal is 1 MHz - 3 MHz, preferably 2 MHz. The low-frequency signal is used to control the electrode 2 to excite low-frequency electrons, driving the already generated plasma to physically bombard the deposits in the area where the electrode 2 is located, including the deposits on the sidewall of the outer chamber 6 where the electrode 2 is located and the deposits on the isolation ring 1.

[0048] In an optional embodiment, the method for removing chamber deposits of a semiconductor manufacturing equipment further includes:

[0049] Step S3: Detect whether the deposits are completely removed through spectral analysis. Exemplarily, the spectral analyzer 8 detects the light intensity of the gas after the reaction in the chamber. The spectral analyzer 8 determines the chemical components of a substance according to the spectrum emitted by the element. For example, the spectral analyzer 8 determines whether the deposits are completely removed by detecting the change in the fluorine content in the processing gas or the change in the carbon element content in the deposits.

[0050] It should be understood that the above specific embodiments of the present application are only for illustrative explanation or interpretation of the principles of the present application, and do not constitute a limitation on the present application. Therefore, any modifications, equivalent replacements, improvements, etc. made without departing from the spirit and scope of the present application shall be included within the protection scope of the present application. In addition, the appended claims of the present application are intended to cover all changes and modifications that fall within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

[0051] Obviously, the above embodiments are only examples given for clear illustration and are not limitations on the embodiments. For those of ordinary skill in the art, other different forms of changes or variations can be made on the basis of the above description. It is not necessary and impossible to enumerate all the embodiments here. And the obvious changes or variations derived therefrom are still within the protection scope of the present invention.

Claims

1. A semiconductor manufacturing device, characterized in that, it includes: a chamber, including an inner chamber, an outer chamber, and a channel connecting the inner chamber and the outer chamber, the channel being located between the inner chamber and the side wall of the chamber; one or more electrodes disposed in the side wall of the chamber for ionizing a processing gas from the inner chamber to generate plasma to remove deposits generated in the inner chamber; an isolation ring disposed on the side wall of the chamber and located in the channel for isolating the contamination of the deposits on the side wall of the chamber; wherein, the isolation ring is a circular ring disposed around the side wall of the chamber, the longitudinal section of the isolation ring is in a C-shaped with a shorter upper part and a longer lower part, the length of the lower end of the isolation ring is greater than or equal to the distance from the edge of the inner chamber to the side wall of the chamber, and the lower end of the isolation ring protrudes inward from the side wall of the chamber into the channel.

2. The semiconductor manufacturing device according to claim 1, characterized in that, the electrode is disposed in the side wall of the chamber and exposed to the processing gas in the chamber for removing the deposits attached to the side wall of the chamber.

3. The semiconductor manufacturing device according to claim 1, characterized in that, the one or more electrodes are disposed in the side wall of the chamber for generating the plasma to remove the deposits attached to the surface of the isolation ring.

4. The semiconductor manufacturing device according to claim 3, characterized in that, the isolation ring has an opening for transporting a wafer.

5. The semiconductor manufacturing device according to claim 3, characterized in that, the isolation ring has a plurality of openings, and the openings include visual windows.

6. The semiconductor manufacturing device according to claim 3, characterized in that, the isolation ring is a conductor and has a yttrium oxide coating on it.

7. The semiconductor manufacturing device according to claim 3, characterized in that, the isolation ring is detachable.

8. The semiconductor manufacturing device according to claim 1, characterized in that, it further includes: a radio frequency generator electrically connected to the electrode for providing an oscillating current to the electrode.

9. The semiconductor manufacturing device according to claim 8, characterized in that, the radio frequency generator generates a high-frequency signal with a frequency range of 50 MHz - 70 MHz for ionizing the processing gas to generate the plasma.

10. The semiconductor manufacturing device according to claim 9, characterized in that, the radio frequency generator generates a low-frequency signal with a frequency range of 1 MHz - 3 MHz for controlling the plasma to remove the deposits.

11. The semiconductor manufacturing device according to claim 10, characterized in that, it further includes: a spectral analyzer, the probe of the spectral analyzer is disposed in an opening of the isolation ring for detecting whether the deposits are removed cleanly.

12. The semiconductor manufacturing device according to claim 11, characterized in that, it further includes: a control device electrically connected to the radio frequency generator and the spectral analyzer respectively for controlling the switch and signal frequency of the radio frequency generator according to the detection result of the spectral analyzer.

13. The semiconductor manufacturing equipment according to claim 12, wherein, the control mode of the control device is: when the spectrometer detects that the light intensity is lower than a predetermined threshold, turn off the radio frequency generator; if the spectrometer detects that the light intensity is higher than the predetermined threshold, turn on the radio frequency generator and control it to generate the high-frequency signal and the low-frequency signal.

14. The semiconductor manufacturing equipment according to any one of claims 1 to 13, wherein, it further includes: a suction pump, disposed at the bottom of the chamber, for sucking away the deposits in the chamber.

15. A method for removing deposits in a chamber of a semiconductor manufacturing equipment, wherein, it includes: providing the semiconductor manufacturing equipment according to any one of claims 1 to 14, introducing a processing gas into the equipment chamber, and the processing gas flows from the inner chamber to the outer chamber through a channel connecting the inner chamber and the outer chamber; outputting a high-frequency signal and a low-frequency signal to one or more electrodes disposed on the side wall of the chamber, the high-frequency signal is used to ionize the processing gas from the inner chamber to generate plasma, and the low-frequency signal is used to control the plasma to remove the deposits in the chamber.

16. The method for removing deposits in a chamber of a semiconductor manufacturing equipment according to claim 15, wherein, it further includes: detecting whether the deposits are completely removed by a spectrometer.

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