Low intermodulation mixer

Abstract

The application provides a low-intermodulation frequency mixer. The low-intermodulation frequency mixer comprises a local oscillator matching unit, a resistive frequency conversion unit, a balun coil, two resonance units, an intermediate frequency matching unit and a radio frequency matching unit; the resistive frequency conversion unit comprises a pHEMT module, the pHEMT module comprises a pHEMT tube and a first resistor, the pHEMT tube gate is connected with the output end of the local oscillator matching unit, the pHEMT tube source is grounded, the pHEMT tube is not conductive when the gate voltage is lower than the opening voltage; the pHEMT tube has a linear conduction characteristic when the gate voltage is not lower than the opening voltage; the first end of the first resistor is connected with the pHEMT tube gate, and the second end of the first resistor is grounded. The application can realize good intermodulation characteristics. The linearity of the frequency mixer circuit is improved, so that a wide local oscillator power dynamic range is obtained, and a small frequency conversion loss is obtained.

Description

Technical Field

[0001] This invention belongs to the field of electronic circuit technology, and in particular relates to a low-intermodulation mixer. Background Technology

[0002] With societal development, communication plays an increasingly important role in people's work and lives. In the field of radio communication, the quality of communication products depends on the design and implementation methods of the radio frequency (RF) communication hardware. The mixer is a key component of RF communication hardware, and its performance directly affects the performance of the entire system.

[0003] The inventors discovered that most existing mixers are implemented using nonlinear components. However, using only nonlinear devices to perform mixing inevitably leads to relatively high nonlinear distortion and intermodulation distortion, resulting in low linearity and high frequency conversion losses, which in turn affects the overall performance of the system. Summary of the Invention

[0004] This invention provides a low-intermodulation mixer to solve the problems of low linearity and high frequency conversion loss in mixers.

[0005] In a first aspect, embodiments of the present invention provide a low-intermodulation mixer, comprising:

[0006] Local oscillator matching unit, resistive frequency conversion unit, balun coil, two resonant units, intermediate frequency matching unit and radio frequency matching unit;

[0007] The input terminal of the local oscillator matching unit is used to receive the local oscillator signal, the input terminal of the intermediate frequency matching unit is used to receive or transmit the intermediate frequency signal, and the input terminal of the radio frequency matching unit is used to transmit or receive the radio frequency signal.

[0008] The resistive frequency converter unit includes a pHEMT module, which includes a pHEMT transistor and a first resistor. The gate of the pHEMT transistor is connected to the output terminal of the local oscillator matching unit, and the source of the pHEMT transistor is grounded. When the gate voltage is lower than the turn-on voltage, the pHEMT transistor is not turned on; when the gate voltage is not lower than the turn-on voltage, the pHEMT transistor has linear conduction characteristics. The first terminal of the first resistor is connected to the gate of the pHEMT transistor, and the second terminal of the first resistor is grounded.

[0009] The balun coil includes a first port, a second port, a third port, and a fourth port for extracting or inputting intermediate frequency (IF) and radio frequency (RF) frequencies; the first port is connected to the drain of the resistive frequency converter unit, the second port is connected to the output of the IF matching unit, the third port is connected to the output of the RF matching unit, and the fourth port is grounded.

[0010] One of the two resonant units is connected to the drain of the resistive frequency converter, and the other of the two resonant units is connected to the third port of the balun coil.

[0011] In one possible implementation, the input of the local oscillator matching unit is the local oscillator port of the low-intermodulation mixer; the input of the intermediate frequency matching unit is the intermediate frequency port of the low-intermodulation mixer; and the input of the radio frequency matching unit is the radio frequency port of the low-intermodulation mixer.

[0012] In one possible implementation, the local oscillator matching unit includes: a first inductor, a second resistor, and a capacitor module;

[0013] The first end of the first inductor is connected to the input end of the local oscillator matching unit;

[0014] The first end of the second resistor is connected to the first end of the first inductor, and the second end of the second resistor is grounded.

[0015] The first end of the capacitor module is connected to the second end of the first inductor, and the second end of the capacitor module is the output end of the local oscillator matching unit.

[0016] In one possible implementation, the local oscillator matching unit includes: a second inductor, a first capacitor, a third resistor, and a capacitor module;

[0017] The first end of the second inductor is connected to the input end of the local oscillator matching unit;

[0018] The first terminal of the first capacitor is connected to the first terminal of the second inductor;

[0019] The first end of the third resistor is connected to the second end of the first capacitor, and the second end of the third resistor is grounded.

[0020] The first end of the capacitor module is connected to the second end of the second inductor, and the second end of the capacitor module is the output end of the local oscillator matching unit.

[0021] In one possible implementation, the local oscillator matching unit includes: a third inductor, a fourth inductor, and a capacitor module;

[0022] The first end of the third inductor is connected to the input end of the local oscillator matching unit;

[0023] The first terminal of the fourth inductor is connected to the first terminal of the third inductor; the second terminal of the fourth inductor is grounded.

[0024] The first end of the capacitor module is connected to the second end of the third inductor, and the second end of the capacitor module is the output end of the local oscillator matching unit.

[0025] In one possible implementation, the capacitor module includes a plurality of matching capacitors, the number of which is consistent with the number of pHEMT tubes included in the pHEMT module, and they are connected in a one-to-one correspondence.

[0026] In one possible implementation, the resistive frequency converter unit includes two or more pHEMT modules connected in series, and the gate of the pHEMT transistor in each pHEMT module is connected to a matching capacitor corresponding to that pHEMT transistor.

[0027] In one possible implementation, the balun coil includes a primary inductor and a secondary inductor.

[0028] The first tap of the primary inductor is connected to the first port, and the second tap of the primary inductor is connected to the second port;

[0029] The first tap of the secondary inductor is connected to the third port, and the second tap of the secondary inductor is connected to the fourth port;

[0030] The primary inductor is formed by winding multiple turns of metal wire into a square shape, and is led out from the center of the primary inductor through a lower layer wire tap; the secondary inductor is wound in the gap between the primary inductors, and is led out from the center of the secondary inductor through a lower layer wire tap.

[0031] In one possible implementation, the balun coil further includes a second capacitor;

[0032] The first terminal of the second capacitor is connected to the first tap of the primary inductor coil;

[0033] The second terminal of the second capacitor is connected to the second tap of the primary inductor coil.

[0034] In one possible implementation, the resonant unit comprises a series resonant network or a parallel resonant network.

[0035] The beneficial effects of the low intermodulation mixer provided in this invention are as follows: This invention employs a passive resistive mixer structure. The signal injected into the local oscillator port can change the depletion depth of the gate barrier layer of the gallium arsenide pHEMT transistor, thereby altering the electron concentration in the channel below the gate and consequently affecting the resistance of the pHEMT transistor. Therefore, the channel resistance of the pHEMT transistor is modulated by the local oscillator signal. When a voltage signal is injected into the drain, the resulting reflected signal is also modulated by the channel resistance, thus generating a mixing signal. Because the intermodulation signal generated during the modulation process is low, better intermodulation characteristics can be achieved. This improves the linearity of the mixer circuit, thereby obtaining a wide local oscillator power dynamic range and achieving lower conversion losses. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 A schematic diagram of a low-intermodulation mixer provided in one embodiment of the present invention;

[0038] Figure 2 A block diagram illustrating the transmit-receive reciprocity of a low-intermodulation mixer provided as an embodiment of the present invention;

[0039] Figure 3 Figures (a), (b), and (c) are three circuit schematics of the resistive frequency conversion unit of a low-intermodulation mixer provided in one embodiment of the present invention.

[0040] Figure 4 Figures (a), (b), and (c) are three circuit schematics of the local oscillator matching unit of a low-intermodulation mixer provided in an embodiment of the present invention.

[0041] Figure 5 Figures (a) and (b) are two specific implementation diagrams of the balun coil of a low-intermodulation mixer provided in one embodiment of the present invention. Detailed Implementation

[0042] To enable those skilled in the art to better understand this solution, the technical solutions in the embodiments of this solution will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this solution, not all of them. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this solution.

[0043] The term "comprising" and any other variations thereof in the specification, claims, and accompanying drawings of this invention mean "including but not limited to," and are intended to cover a non-exclusive inclusion, not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order.

[0044] To make the objectives, technical solutions, and advantages of the present invention clearer, specific embodiments will be described below in conjunction with the accompanying drawings.

[0045] The implementation of the present invention will be described in detail below with reference to the accompanying drawings:

[0046] Figure 1This is a schematic diagram of a low-intermodulation mixer provided in an embodiment of the present invention. (Refer to...) Figure 1 The low-intermodulation mixer includes a local oscillator matching unit 110, a resistive frequency conversion unit 120, a balun coil 130, two resonant units 140, an intermediate frequency matching unit 150, and an radio frequency matching unit 160.

[0047] The input terminal of the local oscillator matching unit 110 is used to receive the local oscillator signal, the input terminal of the intermediate frequency matching unit 150 is used to receive or transmit the intermediate frequency signal, and the input terminal of the radio frequency matching unit 160 is used to transmit or receive the radio frequency signal.

[0048] In one possible implementation, Figure 2 The following is a block diagram illustrating the transceiver reciprocity of a low-intermodulation mixer according to an embodiment of the present invention: the input terminal of the local oscillator matching unit 110 is the local oscillator port of the low-intermodulation mixer; the input terminal of the intermediate frequency matching unit 150 is the intermediate frequency port of the low-intermodulation mixer; and the input terminal of the radio frequency matching unit 160 is the radio frequency port of the low-intermodulation mixer.

[0049] In this embodiment, the mixer circuit has two operating modes: up-conversion mode and down-conversion mode. In up-conversion mode, the intermediate frequency (IF) signal injected into the IF port is mixed with the local oscillator (LO) signal injected into the local oscillator (LO) port. The resulting up-converted RF signal is obtained at the RF port, with an operating frequency band of LO±IF. In down-conversion mode, the RF signal injected into the RF port is mixed with the local oscillator (LO) signal injected into the local oscillator (LO) port. The resulting down-converted IF signal is obtained at the IF port, with an operating frequency band of RF±LO. This allows for reciprocal up-conversion and down-conversion functionality.

[0050] Specifically, when the mixer circuit is in up-conversion mode, the local oscillator signal is input from the local oscillator port and received by the local oscillator matching unit; the intermediate frequency signal is input from the intermediate frequency port and received by the intermediate frequency matching unit; during mixing in the mixer circuit, the radio frequency matching unit receives the up-converted radio frequency signal and outputs it from the radio frequency port.

[0051] Specifically, when the mixer circuit is in down-conversion mode, the local oscillator signal is input from the local oscillator port and received by the local oscillator matching unit; the radio frequency signal is input from the radio frequency port and received by the radio frequency matching unit; the mixing is completed in the mixer circuit, and the intermediate frequency matching unit receives the down-converted intermediate frequency signal and outputs it from the intermediate frequency port.

[0052] The resistive frequency converter unit 120 includes a pHEMT module, see reference. Figure 3(a) The pHEMT module includes a pHEMT transistor E1 and a first resistor R1. The gate G of the pHEMT transistor E1 is connected to the output terminal of the local oscillator matching unit 110. The source of the pHEMT transistor is grounded. When the gate voltage is lower than the turn-on voltage, the pHEMT transistor does not conduct. When the gate voltage is not lower than the turn-on voltage, the pHEMT transistor has linear conduction characteristics. The first terminal of the first resistor is connected to the gate of the pHEMT transistor, and the second terminal of the first resistor is grounded.

[0053] In this embodiment, when the drain-source voltage of the pHEMT is low, the channel of the pHEMT can be well approximated as a linear resistor. However, when it exceeds a certain value, it will exhibit strong nonlinearity. Normally, the resistance of a linear channel is modulated by the local oscillator voltage on the gate.

[0054] In this embodiment, the gate G of the pHEMT is connected to the output terminal of the local oscillator matching unit 110, and the source of the pHEMT is grounded. When the gate voltage is lower than the turn-on voltage, the pHEMT is not turned on; when the gate voltage is not lower than the turn-on voltage, the pHEMT has linear conduction characteristics. The first terminal of the first resistor is connected to the gate of the pHEMT, and the second terminal of the first resistor is grounded. Because changes in the gate voltage can change the depth of the depletion region under the gate, thereby changing the value of the channel resistance. When the gate voltage is lower than the turn-on voltage V... t At this time, the channel resistance is very high, equivalent to an open circuit; when the gate voltage exceeds V... t When the channel resistance is low, it will be a few ohms, which can be well approximated as a linear resistance.

[0055] In this embodiment, device E1 can be a gallium arsenide (GaAs) D-pHEMT. By changing the potential difference between the gate and source, and between the gate and drain of the GaAs D-pHEMT, the source and drain can be made to present a low-resistance state or a high-resistance state, thereby controlling the on / off state of the circuit. When the potential difference V between the gate and source of the GaAs D-pHEMT is V... gs ≥V t When the gallium arsenide D-pHEMT is turned on; when the potential difference V between the gate and source of the gallium arsenide D-pHEMT is V... gs <V t The gallium arsenide D-pHEMT is turned off. Therefore, in this embodiment, the gate of the transistor is connected to ground through a resistor R1, which makes the gate-source voltage V of the D-pHEMT transistor... gs If the voltage is greater than the turn-on voltage, then transistor E1 can be approximated as a linear resistor. The advantage of using a D-pHEMT transistor is that it eliminates the need for an additional bias circuit, simplifies the circuit structure, and is a passive circuit that does not introduce additional power consumption.

[0056] The balun coil 130 includes a first port, a second port, a third port, and a fourth port for extracting or inputting intermediate frequency and radio frequency; the first port is connected to the drain D of the resistive frequency conversion unit 120, the second port is connected to the output of the intermediate frequency matching unit 150, the third port is connected to the output of the radio frequency matching unit 160, and the fourth port is grounded;

[0057] One of the two resonant units, 140, is connected to the drain D of the resistive frequency converter unit 120, and the other of the two resonant units, 140, is connected to the third port of the balun coil 130.

[0058] In this embodiment, when the mixer is in up-conversion mode, the mixer circuit performs mixing processing on the local oscillator signal and the intermediate frequency signal injected from the local oscillator port and the intermediate frequency port, and then obtains the up-converted radio frequency signal from the radio frequency port. The signal mixing process inside the mixer circuit is as follows: a local oscillator signal is injected from the local oscillator port, and an intermediate frequency (IF) signal is injected from the intermediate frequency (IF) port; the local oscillator matching unit 110 receives the local oscillator signal, resonates with it, and transmits the local oscillator signal to the resistive mixing unit 120; when the requirements are met, the resistive frequency conversion unit is equivalent to a linear unit; the IF matching unit 150 transmits the received IF signal to the balun coil 130; when the drain of the pHEMT transistor in the resistive mixing unit receives the IF signal, it is modulated by the channel resistor, thereby generating a mixed signal, and the resistive frequency conversion unit 120 transmits the processed signal to the balun coil 130; the local oscillator signal and the IF signal are mixed; the mixed signal resonates with the resonant unit 140, suppressing spurious signals; the up-converted RF signal is obtained from the RF port.

[0059] In this embodiment, when the mixer is in down-conversion mode, the mixer circuit mixes the local oscillator signal and the radio frequency signal injected from the local oscillator port and the radio frequency port, and then obtains the down-converted intermediate frequency signal from the intermediate frequency port. The signal mixing process inside the mixer circuit is as follows: a local oscillator signal is injected from the local oscillator port, and a radio frequency signal is injected from the radio frequency port; the local oscillator matching unit 110 receives the local oscillator signal, resonates with the local oscillator signal, and transmits the local oscillator signal to the resistive mixing unit 120; when certain requirements are met, the resistive mixing unit is equivalent to a linear unit; the radio frequency matching unit 160 transmits the received radio frequency signal to the balun coil 130; when the drain of the pHEMT tube of the resistive mixing unit receives the radio frequency signal, it is modulated by the channel resistor, thereby generating a mixed signal; the resistive mixing unit 120 transmits the processed signal to the balun coil 130; the mixed signal resonates with the resonant unit 140, suppressing spurious signals; and the down-converted intermediate frequency signal is obtained from the intermediate frequency port.

[0060] In one possible implementation, Figure 4 (a) is a circuit schematic diagram of the local oscillator matching unit of a low-intermodulation mixer provided in an embodiment of the present invention, with reference to... Figure 4 (a) The local oscillator matching unit 110 includes: a first inductor L1, a second resistor R1 and a capacitor module 410; the first end of the first inductor L1 is connected to the input terminal of the local oscillator matching unit 110; the first end of the second resistor R2 is connected to the first end of the first inductor L1 and the second end of the second resistor R2 is grounded; the first end of the capacitor module 410 is connected to the second end of the first inductor L1 and the second end of the capacitor module 410 is the output terminal of the local oscillator matching unit 110.

[0061] In this embodiment, by adjusting at least one of the resistance, capacitance, and inductance values ​​of the RLC network used in the circuit, the circuit is matched to the local oscillator frequency of the mixer circuit. At the same time, the second resistor R2 of the local oscillator matching unit 110 in this embodiment is grounded, ensuring the anti-static capability of the local oscillator port.

[0062] In one possible implementation, refer to Figure 4 (b) The local oscillator matching unit 110 includes: a second inductor L2, a first capacitor C1, a third resistor R3, and a capacitor module 410; the first end of the second inductor L2 is connected to the input terminal of the local oscillator matching unit 110; the first end of the first capacitor C1 is connected to the first end of the second inductor L2; the first end of the third resistor R3 is connected to the second end of the first capacitor C1, and the second end of the third resistor R3 is grounded; the first end of the capacitor module 410 is connected to the second end of the second inductor L2, and the second end of the capacitor module 410 is the output terminal of the local oscillator matching unit 110.

[0063] In one possible implementation, refer to Figure 4 (c) The local oscillator matching unit 110 includes: a third inductor L3, a fourth inductor L4 and a capacitor module 410; the first end of the third inductor L3 is connected to the input end of the local oscillator matching unit 110; the first end of the fourth inductor L4 is connected to the first end of the third inductor L3; the second end of the fourth inductor L4 is grounded; the input end of the capacitor module 410 is connected to the second end of the third inductor L3, and the second end of the capacitor module 410 is the output end of the local oscillator matching unit 110.

[0064] In this embodiment, the local oscillator matching unit 110 is used for local oscillator port impedance matching, playing a crucial role in the injection of the local oscillator signal. By adjusting the capacitance, inductance, or resistance values ​​of the LC or RLC network, resonance is generated with the operating frequency of the local oscillator, enabling the circuit to match the local oscillator frequency at which the mixer circuit operates. A good local oscillator matching circuit can effectively improve the swing of the injected signal. The swing of the input signal directly affects the conduction characteristics of the pHEMT transistor in the resistive frequency conversion unit 120, i.e., the channel resistance of the pHEMT transistor, thereby improving mixing losses and increasing the output 1dB compression point. Therefore, for a given local oscillator power value, adjusting the local oscillator matching unit can effectively improve the mixer performance.

[0065] In one possible implementation, the capacitor module 410 includes a number of matching capacitors, the number of which is consistent with the number of pHEMT tubes included in the pHEMT module, and they are connected in a one-to-one correspondence.

[0066] In this embodiment, the number of matching capacitors in the capacitor module corresponds one-to-one with the number of pHEMT modules in the resistive frequency converter unit. The second terminal of each matching capacitor is connected to the gate of the corresponding pHEMT transistor.

[0067] In one possible implementation, Figure 4 (b) and (c) are schematic diagrams of the frequency conversion unit circuit of a low-intermodulation mixer provided in an embodiment of the present invention. (Refer to...) Figure 4 (b) and 4(c), the resistive frequency conversion unit 130 includes two or more pHEMT modules, each pHEMT module is connected in series, and the gate of the pHEMT tube of each pHEMT module is connected to the matching capacitor corresponding to the pHEMT tube.

[0068] In this embodiment, the resistive frequency conversion unit 120 is the core frequency conversion part of the mixer circuit. This structure is implemented by a pHEMT transistor. The gate of the pHEMT transistor is connected to the local oscillator matching unit 110, the source is grounded, and the drain D is connected to the first port of the balun coil 130. By adjusting the gate width of the pHEMT transistor (maintaining a reasonable impedance) and the number of pHEMT transistors in series, refer to... Figure 4 (b) and 4(c) can change the frequency conversion loss and output 1dB compression point of the mixer circuit.

[0069] In one possible implementation, Figure 5 (a) is a detailed implementation diagram of the balun coil of a low-intermodulation mixer provided in an embodiment of the present invention, referring to... Figure 5 (a) The balun coil 130 includes a primary inductor and a secondary inductor; the first tap P1 of the primary inductor is connected to the first port, and the second tap N1 of the primary inductor is connected to the second port; the first tap P2 of the secondary inductor is connected to the third port, and the second tap N2 of the secondary inductor is connected to the fourth port.

[0070] The primary inductor is formed by winding multiple turns of metal wire into a square shape, and is led out through a lower layer wire tap at the center of the primary inductor; the secondary inductor is wound in the gap between the primary inductors, and is led out through a lower layer wire tap at the center of the secondary inductor.

[0071] In this embodiment, balun coils P1 and N1 are primary inductors, and P2 and N2 are secondary inductors. The primary and secondary inductors are fabricated using on-chip metal traces, and the primary and secondary coil traces are tightly wound together to improve the coupling coefficient between the two stages.

[0072] In this embodiment, the balun coil 130 is fabricated using on-chip metal traces. The primary inductor coil is wound into a square shape using multiple turns of top-layer thick metal traces, and led out through a lower-layer trace tap at the center of the coil. The secondary coil is wound in the gaps between the primary coils and led out through a lower-layer trace tap at the center of the coil. The primary and secondary coil traces are tightly wound together, thereby improving the coupling coefficient between the primary and secondary coils. The primary and secondary coils of the balun coil are respectively connected to the intermediate frequency matching unit and the radio frequency matching unit of the mixer circuit for decimating or inputting the intermediate frequency and radio frequency.

[0073] In one possible implementation, the balun coil 130 also includes a second capacitor C2;

[0074] The first terminal of the second capacitor C2 is connected to the first tap P1 of the primary inductor coil; the second terminal of the second capacitor C2 is connected to the second tap N1 of the primary inductor coil.

[0075] In this embodiment, a capacitor C2 is connected in parallel between taps P1 and N1 of the balun coil 130, such as... Figure 5 As shown in (b). By adjusting the capacitance value of capacitor C2 and the inductance value L between balun coils P1 and N1. P Forming a resonant network can alter the matching characteristics of the intermediate frequency (IF) and radio frequency (RF) ports, and simultaneously affect the conversion loss and linearity of the mixer circuit. Therefore, it is necessary to select appropriate capacitor values ​​to optimize the conversion loss and linearity of the mixer circuit.

[0076] The formula for calculating the resonant frequency is as follows:

[0077]

[0078] In one possible implementation, the resonant unit 140 includes a series resonant network or a parallel resonant network.

[0079] In this embodiment, the series resonant network is composed of a capacitor and an inductor connected in series, with the capacitor grounded.

[0080] In this embodiment, the parallel resonant network is composed of a capacitor and an inductor connected in parallel and then grounded.

[0081] In this embodiment, the resonant unit is composed of an LC resonant network. The LC resonant network can be a series resonant network or a parallel resonant network. By adjusting the inductance value L and capacitance value C in the resonant network, the impedance value of the mixing signal in different frequency bands can be changed, thereby improving the suppression of spurious signals and the intermodulation characteristics of the RF port and the IF port.

[0082] In this embodiment, the intermediate frequency matching unit 150 is connected to the second port and the intermediate frequency port of the balun coil for intermediate frequency signal impedance matching. It is internally composed of a passive matching network consisting of on-chip capacitors and inductors. The intermediate frequency matching unit uses an LC network intermediate frequency port to match the intermediate frequency.

[0083] In this embodiment, the RF matching unit 160 is connected to the third port of the balun coil and the RF port for RF signal impedance matching. It is internally composed of a passive matching network consisting of on-chip capacitors and inductors. The RF matching unit uses an LC network to match the RF port to the RF frequency.

[0084] The beneficial effects of the low intermodulation mixer provided in this invention are as follows: This invention employs a passive resistive mixer structure. The signal injected into the local oscillator port can change the depletion depth of the gate barrier layer of the gallium arsenide pHEMT transistor, thereby altering the electron concentration in the channel below the gate and consequently affecting the resistance of the pHEMT transistor. Therefore, the channel resistance of the pHEMT transistor is modulated by the local oscillator signal. When a voltage signal is injected into the drain, the resulting reflected signal is also modulated by the channel resistance, thus generating a mixing signal. Because the intermodulation signal generated during the modulation process is low, better intermodulation characteristics can be achieved. This improves the linearity of the mixer circuit, thereby obtaining a wide local oscillator power dynamic range and achieving lower conversion losses.

[0085] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A low intermodulation frequency mixer characterized by, The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer.

2. The low intermodulation frequency mixer of claim 1 wherein, The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer.

3. The low intermodulation frequency mixer of claim 1 wherein, The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. 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The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application relates to a low-intermodulation mixer. The application The first end of the first inductor is connected to the input end of the local oscillator matching unit. The first end of the second resistor is connected to the first end of the first inductor, and the second end of the second resistor is grounded. The first end of the capacitor module is connected to the second end of the first inductor, and the second end of the capacitor module is the output end of the local oscillator matching unit.

4. The low intermodulation frequency mixer of claim 1 wherein, The local oscillator matching unit comprises a second inductor, a first capacitor, a third resistor, and a capacitor module. The first end of the second inductor is connected to the input end of the local oscillator matching unit. The first end of the first capacitor is connected to the first end of the second inductor. The first end of the third resistor is connected to the second end of the first capacitor, and the second end of the third resistor is grounded. The first end of the capacitor module is connected to the second end of the second inductor, and the second end of the capacitor module is the output end of the local oscillator matching unit.

5. The low intermodulation frequency mixer of claim 1 wherein, The local oscillator matching unit comprises a third inductor, a fourth inductor, and a capacitor module. The first end of the third inductor is connected to the input end of the local oscillator matching unit. The first end of the fourth inductor is connected to the first end of the third inductor, and the second end of the fourth inductor is grounded. The first end of the capacitor module is connected to the second end of the third inductor, and the second end of the capacitor module is the output end of the local oscillator matching unit.

6. The low intermodulation frequency mixer of any one of claims 3 to 5, wherein, The capacitor module comprises a plurality of matching capacitors, the number of the matching capacitors is consistent with the number of gallium arsenide pHEMT tubes included in the gallium arsenide pHEMT module, and each matching capacitor is connected one-to-one.

7. The low intermodulation frequency mixer of claim 6 wherein, The resistive frequency conversion unit comprises two or more gallium arsenide pHEMT modules, each gallium arsenide pHEMT module is connected in series, and the gate of the gallium arsenide pHEMT tube of each gallium arsenide pHEMT module is connected to the matching capacitor corresponding to the gallium arsenide pHEMT tube.

8. The low intermodulation frequency mixer of claim 1 wherein, The balun coil further comprises a second capacitor. The first end of the second capacitor is connected to the first tap of the primary inductor coil. The second end of the second capacitor is connected to the second tap of the primary inductor coil.

9. The low intermodulation frequency mixer of claim 1 wherein, The resonance unit comprises a series resonance network or a parallel resonance network.

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