Prediction Method, Device, System and Medium for Telecentric Deviation of Lithography Projection Objective

Abstract

The present application provides a method, device, system and medium for predicting the telecentric deviation of a lithography projection objective. The method includes: calculating an initial telecentricity based on the initial pattern center offset and defocus variation on the wafer; calculating the telecentricity when introducing a single interference as the first equivalent telecentricity based on the initial telecentricity, the initial pattern center offset and the pattern center offset when introducing a single interference; calculating the telecentricity when introducing multiple interferences as the second equivalent telecentricity based on the initial telecentricity and the telecentricities corresponding to the respective interferences when introducing multiple interferences; and calculating the pattern center offset at different defocuses as the second telecentric deviation based on the first equivalent telecentricity and the second equivalent telecentricity. Thus, after mastering the initial pattern placement error of the system and the introduced system perturbations, the present application no longer requires additional pattern measurement and can predict the telecentric deviation of the lithography projection objective with high accuracy, with simple calculation and low detection cost.

Description

Technical Field

[0001] This application relates to the field of computer technology, and particularly to a method, device, system, and medium for predicting the telecentric deviation of a projection objective of a lithography machine. Background Art

[0002] A lithography machine is an important device in semiconductor production and manufacturing and has been widely used in the manufacture of large-scale integrated circuits. The lithography process copies the patterns on the mask plate onto the photoresist coated on the surface of the silicon wafer through optical exposure, and then transfers the patterns to the silicon wafer through processes such as development and etching. The lithography process directly determines the feature size in integrated circuit devices and is a key process in the manufacture of large-scale integrated circuits.

[0003] The telecentricity of the projection objective is a key parameter of the lithography machine system. Especially as lithography technology develops into the extreme ultraviolet band field, this parameter plays an important role in improving the overlay accuracy between different pattern layers. Currently, the measurement of telecentricity in published patents and academic papers can be mainly divided into two categories. One is the measurement method based on photoresist, such as traditional non-telecentric measurement, light source measuring instrument, Fresnel zone plate, etc. However, these methods are costly, time-consuming, and the results are easily affected by the performance of the photoresist. The other is the measurement method based on sensors, such as transmission image sensors, combination of vacuum graphics and sensors, etc. However, these methods have high requirements for the alignment accuracy of the sensors and are easily affected by the fluctuation of the light source energy.

[0004] Telecentricity is defined as the angle between the chief ray and the optical axis at each field point, or equivalently, the off-axis position of the pupil filling image in the pupil plane. Reflected on the wafer, the telecentric deviation is the shift of the imaging position when the wafer stage deviates from the ideal position, thus causing placement errors between pattern layers. Various interferences in the projection system may also affect the placement error, such as aberration, stray light, etc. In the present invention, the placement error caused by aberration and stray light is regarded as the equivalent telecentric deviation caused by them. Summary of the Invention

[0005] In view of this, this Summary of the Invention section is provided to introduce the concepts in a brief form, and these concepts will be described in detail in the following Detailed Implementation section. This Summary of the Invention section is not intended to identify the key features or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.

[0006] The purpose of this application is to provide a method, device, system, and medium for predicting the telecentric deviation of a projection objective of a lithography machine, which reduces the complexity and cost of prediction while having a high prediction accuracy.

[0007] To achieve the above purpose, this application has the following technical solutions:

[0008] In a first aspect, an embodiment of the present application provides a method for predicting telecentricity deviation of a projection objective lens of a lithography machine, comprising:

[0009] The initial telecentricity is calculated based on the initial pattern center offset and defocus variation on the wafer;

[0010] When a single interference exists in the projection system, the telecentricity when the single interference is introduced is calculated according to the initial telecentricity, the initial pattern center offset, and the pattern center offset when the single interference is introduced, as the first equivalent telecentricity;

[0011] When there are multiple interferences in the projection system, the telecentricity when the multiple interferences are introduced is calculated according to the initial telecentricity and the telecentricity corresponding to each interference when the multiple interferences are introduced, as the second equivalent telecentricity;

[0012] When a single interference exists in the projection system, the pattern center offset at different defocusing times is calculated according to the first equivalent telecentricity as a first telecentric deviation;

[0013] When multiple interferences exist in the projection system, the pattern center offset at different defocusing times is calculated according to the second equivalent telecentricity as the second telecentric deviation.

[0014] In a possible implementation, calculating the initial telecentricity based on the initial pattern center offset and the defocus variation on the wafer includes:

[0015]

[0016] in, is the initial telecentricity, is the initial pattern center offset, ΔF is the defocus variation.

[0017] In one possible implementation, the telecentricity when the single interference is introduced is calculated based on the initial telecentricity, the initial pattern center offset, and the pattern center offset when the single interference is introduced, as the first equivalent telecentricity, including:

[0018]

[0019] in, is the first equivalent telecentricity, is the initial pattern center offset, is the pattern center offset when the single interference is introduced.

[0020] In a possible implementation manner, the telecentricity when introducing the multiple interferences is calculated based on the initial telecentricity and the telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, and used as the second equivalent telecentricity, including;

[0021]

[0022] Wherein, is the second equivalent telecentricity, are the telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, where n is a positive integer.

[0023] In a second aspect, an embodiment of the present application provides a prediction device for the telecentricity deviation of a lithography projection objective lens, including:

[0024] An initial telecentricity calculation unit, configured to calculate an initial telecentricity according to an initial pattern center offset amount and a defocus change amount on a wafer;

[0025] A first equivalent telecentricity calculation unit, configured to, when there is a single interference in the projection system, calculate the telecentricity when introducing the single interference based on the initial telecentricity, the initial pattern center offset amount, and the pattern center offset amount when introducing the single interference, and use it as the first equivalent telecentricity;

[0026] A second equivalent telecentricity calculation unit, configured to, when there are multiple interferences in the projection system, calculate the telecentricity when introducing the multiple interferences based on the initial telecentricity and the telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, and use it as the second equivalent telecentricity;

[0027] A first telecentricity deviation calculation unit, configured to, when there is a single interference in the projection system, calculate the pattern center offset at different defocuses as the first telecentricity deviation based on the first equivalent telecentricity;

[0028] A second telecentricity deviation calculation unit, configured to, when there are multiple interferences in the projection system, calculate the pattern center offset at different defocuses as the second telecentricity deviation based on the second equivalent telecentricity.

[0029] In a possible implementation manner, the initial telecentricity calculation unit is specifically configured to calculate the initial telecentricity

[0030]

[0031] Wherein, is the initial telecentricity, is the initial pattern center offset amount, ΔF is the defocus change amount.

[0032] In a possible implementation, the first equivalent telecentricity calculation unit is specifically configured to calculate the first equivalent telecentricity

[0033]

[0034] wherein, is the first equivalent telecentricity, is the initial pattern center offset, is the pattern center offset when introducing the single interference.

[0035] In a possible implementation, the second equivalent telecentricity calculation unit is specifically configured to calculate the second equivalent telecentricity

[0036]

[0037] wherein, is the second equivalent telecentricity, is the telecentricity corresponding to each interference when introducing the multiple interferences, where n is a positive integer.

[0038] In a third aspect, an embodiment of the present application provides a prediction system for the telecentricity deviation of a lithography projection objective lens, including:

[0039] a memory for storing a computer program;

[0040] a processor for implementing the steps of the prediction method for the telecentricity deviation of the lithography projection objective lens as described above when executing the computer program.

[0041] In a fourth aspect, an embodiment of the present application provides a computer-readable medium, on which a computer program is stored, and when the computer program is processed and executed, the steps of the prediction method for the telecentricity deviation of the lithography projection objective lens as described above are implemented.

[0042] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0043] The embodiments of the present application provide a method, device, system and medium for predicting the telecentric deviation of a lithography projection objective. The method includes: calculating an initial telecentricity based on the initial pattern center offset and defocus change amount on the wafer, and calculating the telecentricity when introducing a single interference as the first equivalent telecentricity based on the initial telecentricity, the initial pattern center offset and the pattern center offset when introducing a single interference; calculating the telecentricity when introducing multiple interferences as the second equivalent telecentricity based on the initial telecentricity and the telecentricities corresponding to the respective interferences when introducing multiple interferences; calculating the pattern center offset at different defocuses as the second telecentric deviation based on the first equivalent telecentricity and the second equivalent telecentricity. Thus, after mastering the initial pattern placement error of the system and the introduced system perturbations, the present application no longer requires additional pattern measurement, and can predict the telecentric deviation of the lithography projection objective with high precision, with simple calculation and low detection cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0045] Combined with the drawings and referring to the following specific embodiments, the above and other features, advantages and aspects of the various embodiments of the present disclosure will become more apparent. Throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic, and the original components and elements are not necessarily drawn to scale.

[0046] Figure 1 FIG. shows a flowchart of a method for predicting the telecentric deviation of a lithography projection objective provided by an embodiment of the present application;

[0047] Figure 2 FIG. shows a schematic diagram of the system initial telecentricity at each position in the field of view without any system perturbation provided by an embodiment of the present application;

[0048] Figure 3 FIG. shows a schematic diagram of the system telecentricity and its predicted value at each position in the field of view when introducing a 5% stray light system perturbation provided by an embodiment of the present application;

[0049] Figure 4 FIG. shows a schematic diagram of the system telecentricity and its predicted value at each position in the field of view when introducing an aberration Z7 = 0.05 system perturbation provided by an embodiment of the present application;

[0050] Figure 5Shows a schematic diagram of the system telecentricity at each position in the field of view and its predicted value when the 5% stray light and aberration Z7 = 0.05 provided by the embodiments of the present application act simultaneously on the system perturbation;

[0051] Figure 6 Shows a schematic diagram of a prediction device for the telecentricity deviation of a projection objective of a lithography machine provided by the embodiments of the present application. Detailed implementation manners

[0052] To make the above objects, features, and advantages of the present application more obvious and understandable, the following will describe the detailed implementation manners of the present application in conjunction with the accompanying drawings.

[0053] In the following description, many specific details are set forth to facilitate a thorough understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0054] As described in the background art, a lithography machine is an important device in semiconductor production and manufacturing and has been widely used in the manufacture of large-scale integrated circuits. The lithography process copies the patterns on the mask plate onto the photoresist coated on the surface of the silicon wafer through optical exposure, and then further transfers the patterns to the silicon wafer through processes such as development and etching. The lithography process directly determines the feature size in integrated circuit devices and is a key process in the manufacture of large-scale integrated circuits.

[0055] The telecentricity of the projection objective is a key parameter of the lithography machine system. Especially as lithography technology develops into the extreme ultraviolet band field, this parameter plays an important role in improving the overlay accuracy between different pattern layers. The measurement of telecentricity in currently published patents and academic papers can be mainly divided into two categories. One is the measurement method based on photoresist, such as traditional non-telecentric measurement, light source measuring instrument, Fresnel zone plate, etc. However, these methods are costly, time-consuming, and the results are easily affected by the performance of the photoresist. The other is the measurement method based on sensors, such as transmission image sensors, combination of vacuum graphics and sensors, etc. However, these methods have high requirements for the alignment accuracy of the sensors and are easily affected by the fluctuation of the light source energy.

[0056] Telecentricity is defined as the angle between the chief ray and the optical axis at each field point, or equivalently, the off-axis position where the pupil filling image is located in the pupil plane. Reflected on the wafer, the telecentricity deviation is the offset of the imaging position when the wafer stage deviates from the ideal position, thus causing placement errors between pattern layers. Various interferences in the projection system may also affect the placement errors, such as aberration, stray light, etc. The present invention regards the placement errors caused by aberration and stray light as the equivalent telecentricity deviation caused by them.

[0057] To solve the above technical problems, an embodiment of the present application provides a method, device, system, and medium for predicting the telecentric deviation of a lithography projection objective. The method includes: calculating an initial telecentricity based on the initial pattern center offset and defocus variation on the wafer, calculating the telecentricity when introducing a single interference as the first equivalent telecentricity based on the initial telecentricity, the initial pattern center offset, and the pattern center offset when introducing the single interference; calculating the telecentricity when introducing multiple interferences as the second equivalent telecentricity based on the initial telecentricity and the telecentricities corresponding to the respective interferences when introducing the multiple interferences; and calculating the pattern center offset at different defocuses as the second telecentric deviation based on the first equivalent telecentricity and the second equivalent telecentricity. Thus, after the present application grasps the initial pattern placement error of the system and the introduced system perturbations, no additional pattern measurement is required, and the telecentric deviation of the lithography projection objective can be predicted with high precision, with simple calculation and low detection cost.

[0058] Exemplary method

[0059] See Figure 1 As shown, it is a flowchart of a method for predicting the telecentric deviation of a lithography projection objective provided by an embodiment of the present application, including:

[0060] S101: Calculate an initial telecentricity based on the initial pattern center offset and defocus variation on the wafer.

[0061] In an embodiment of the present application, the initial telecentricity can be calculated based on the initial pattern center offset and defocus variation on the wafer. Optionally, the test mask used in the embodiment of the present application can be a via pattern with a period of 44 nm (equivalent size on the wafer) and line widths of 22 nm in both the horizontal and vertical directions.

[0062] Specifically, the pattern center offset at each position in the field of view without any system perturbation can be calibrated, and the telecentricity at each position in the field of view can be determined by changing the defocus amount of the wafer position.

[0063]

[0064] Among them, is the initial telecentricity, is the initial pattern center offset, ΔF is the defocus variation.

[0065] See Figure 2 As shown, it is a schematic diagram of the system initial telecentricity at each position in the field of view without any system perturbation provided by an embodiment of the present application, where the abscissa is the field of view position, the ordinate is the telecentricity, and it is divided into a curve of the telecentricity varying with the field of view position in the horizontal direction and a curve of the telecentricity varying with the field of view position in the vertical direction.

[0066] S102: When there is a single interference in the projection system, calculate the telecentricity when introducing the single interference based on the initial telecentricity, the initial pattern center offset, and the pattern center offset when introducing the single interference, and use it as the first equivalent telecentricity.

[0067] In the embodiment of the present application, since the system perturbation can be equivalent to adding an equivalent telecentricity on the basis of the original telecentricity, and the telecentricity can be characterized by the change of the pattern center offset, therefore, the predicted value of the telecentricity after introducing the system perturbation can be calculated based on the initial telecentricity, the initial pattern center offset, and the pattern center offset when introducing the single interference to obtain the telecentricity when introducing the single interference, which is used as the first equivalent telecentricity.

[0068]

[0069] Wherein, is the first equivalent telecentricity, is the initial pattern center offset, is the pattern center offset when introducing the single interference.

[0070] S103: When there are multiple interferences in the projection system, calculate the telecentricity when introducing the multiple interferences based on the initial telecentricity and the telecentricities respectively corresponding to each interference when introducing the multiple interferences, and use it as the second equivalent telecentricity.

[0071] S104: When there is a single interference in the projection system, calculate the pattern center offset at different defocus levels based on the first equivalent telecentricity as the first telecentric deviation;

[0072] S105: When there are multiple interferences in the projection system, calculate the pattern center offset at different defocus levels based on the second equivalent telecentricity as the second telecentric deviation.

[0073] In the embodiment of the present application, when multiple system perturbations are introduced simultaneously, the equivalent telecentricity under multiple system perturbations can be predicted according to the vector superposition principle.

[0074] Specifically, when there are multiple interferences in the projection system, the telecentricity when introducing the multiple interferences can be calculated based on the initial telecentricity and the telecentricities respectively corresponding to each interference when introducing the multiple interferences, and used as the second equivalent telecentricity.

[0075]

[0076] Wherein, is the second equivalent telecentricity, The telecentricity corresponding to each interference when multiple interferences are introduced, where n is a positive integer. The telecentricity corresponding to each interference when multiple interferences are introduced can be calculated according to formula (2). The equivalent telecentricity after introducing n perturbations in the lithography exposure system can be calculated according to formula (3).

[0077] When the first equivalent telecentricity or the second equivalent telecentricity is calculated, when there is a single interference in the projection system, the pattern center offset at different defocus levels can be calculated according to the first equivalent telecentricity as the first telecentric deviation; when there are multiple interferences in the projection system, the pattern center offset at different defocus levels is calculated according to the second equivalent telecentricity as the second telecentric deviation.

[0078] Using the prediction method of the embodiment of the present application, when a system perturbation of 5% stray light is introduced, the system telecentricity at each position in the field of view and its predicted value are as Figure 3 shown. When a system perturbation with aberration Z7 = 0.05 is introduced, the system telecentricity at each position in the field of view and its predicted value are as Figure 4 shown. When a system perturbation with both 5% stray light and aberration Z7 = 0.05 acting simultaneously, the system telecentricity at each position in the field of view and its predicted value are as Figure 5 shown. It can be seen that the actually measured telecentricity is extremely close to the predicted value. Except for individual cases, the prediction deviation always remains below 30%. In addition, there is high precision in both the telecentricity when the system perturbation is small and in the horizontal direction. After obtaining the result of the telecentricity, the telecentric deviation can be inferred. Then, the budget requirements for other key parameters such as the system defocus amount can be determined according to the range of the telecentric deviation.

[0079] The embodiment of the present application provides a method for predicting the telecentric deviation of a lithography projection objective lens. The method includes: calculating the initial telecentricity according to the initial pattern center offset and the defocus change amount on the wafer, calculating the telecentricity when a single interference is introduced according to the initial telecentricity, the initial pattern center offset, and the pattern center offset when a single interference is introduced as the first equivalent telecentricity; calculating the telecentricity when multiple interferences are introduced according to the initial telecentricity and the telecentricity corresponding to each interference when multiple interferences are introduced as the second equivalent telecentricity; calculating the pattern center offset at different defocus levels as the second telecentric deviation according to the first equivalent telecentricity and the second equivalent telecentricity. Thus, after the present application grasps the initial pattern placement error of the system and the introduced system perturbations, no additional pattern measurement is required, and the telecentric deviation of the lithography projection objective lens can be predicted with high precision, with simple calculation and low detection cost.

[0080] Exemplary device

[0081] See Figure 6 shown, which is a schematic diagram of a device for predicting the telecentric deviation of a lithography projection objective lens provided by an embodiment of the present application, including:

[0082] An initial telecentricity calculation unit 601, configured to calculate an initial telecentricity based on an initial pattern center offset and a defocus variation amount on a wafer;

[0083] A first equivalent telecentricity calculation unit 602, configured to, when there is a single interference in a projection system, calculate a telecentricity when introducing the single interference based on the initial telecentricity, the initial pattern center offset, and a pattern center offset when introducing the single interference, and use it as a first equivalent telecentricity;

[0084] A second equivalent telecentricity calculation unit 603, configured to, when there are multiple interferences in a projection system, calculate a telecentricity when introducing the multiple interferences based on the initial telecentricity and telecentricities respectively corresponding to each interference when introducing the multiple interferences, and use it as a second equivalent telecentricity;

[0085] A first telecentricity deviation calculation unit 604, configured to, when there is a single interference in a projection system, calculate a pattern center offset at different defocuses based on the first equivalent telecentricity as a first telecentricity deviation;

[0086] A second telecentricity deviation calculation unit 605, configured to, when there are multiple interferences in a projection system, calculate a pattern center offset at different defocuses based on the second equivalent telecentricity as a second telecentricity deviation.

[0087] In a possible implementation manner, the initial telecentricity calculation unit is specifically configured to calculate the initial telecentricity

[0088]

[0089] wherein, is the initial telecentricity, is the initial pattern center offset, ΔF is the defocus variation amount.

[0090] In a possible implementation manner, the first equivalent telecentricity calculation unit is specifically configured to calculate the first equivalent telecentricity

[0091]

[0092] wherein, is the first equivalent telecentricity, is the initial pattern center offset, is the pattern center offset when introducing the single interference.

[0093] In a possible implementation manner, the second equivalent telecentricity calculation unit is specifically configured to calculate the second equivalent telecentricity

[0094]

[0095] wherein, is the second equivalent telecentricity, is the telecentricity corresponding to each interference when introducing the multiple interferences, where n is a positive integer.

[0096] The embodiment of the present application provides a prediction device for the telecentricity deviation of a lithography projection objective lens. The method applied to this device includes: calculating the initial telecentricity according to the initial pattern center offset and defocus variation on the wafer, calculating the telecentricity when introducing a single interference according to the initial telecentricity, the initial pattern center offset, and the pattern center offset when introducing a single interference, as the first equivalent telecentricity; calculating the telecentricity when introducing multiple interferences according to the initial telecentricity and the telecentricity corresponding to each interference when introducing multiple interferences, as the second equivalent telecentricity; calculating the pattern center offset at different defocuses according to the first equivalent telecentricity and the second equivalent telecentricity as the second telecentricity deviation. Thus, after the present application grasps the initial pattern placement error of the system and the introduced system perturbations, no additional pattern measurement is required, and the telecentricity deviation of the lithography projection objective lens can be predicted with high accuracy, with simple calculation and low detection cost.

[0097] Based on the above embodiments, the embodiment of the present application provides a prediction system for the telecentricity deviation of a lithography projection objective lens, including:

[0098] A memory for storing a computer program;

[0099] A processor for implementing the steps of the prediction method for the telecentricity deviation of the lithography projection objective lens as described above when executing the computer program.

[0100] Based on the above embodiments, the embodiment of the present application further provides a computer-readable medium, on which a computer program is stored, and when the computer program is processed and executed, the steps of the prediction method for the telecentricity deviation of the lithography projection objective lens as described above are implemented.

[0101] It should be noted that the computer-readable medium described above in the present disclosure may be a computer-readable signal medium, a computer-readable storage medium, or any combination of the two. A computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the above. More specific examples of the computer-readable storage medium may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present disclosure, the computer-readable storage medium may be any tangible medium that contains or stores a program, which can be used by or in conjunction with an instruction execution system, apparatus, or device. In the present disclosure, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries computer-readable program code. Such a propagated data signal may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium, which can send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (radio frequency), etc., or any suitable combination of the above.

[0102] The above computer-readable medium may be included in the above system; or it may exist separately without being assembled into the system.

[0103] In particular, according to an embodiment of the present disclosure, the process described above with reference to the flowchart may be implemented as a computer software program. For example, an embodiment of the present disclosure includes a computer program product, which includes a computer program carried on a non-transitory computer-readable medium, and the computer program contains program code for executing the method shown in the flowchart.

[0104] Each embodiment in this specification is described in a progressive manner. For the same or similar parts among the embodiments, reference can be made to each other. Each embodiment focuses on the differences from other embodiments. In particular, for the apparatus embodiment, since it is basically similar to the method embodiment, it is described relatively simply. For the relevant parts, reference can be made to the description of the method embodiment.

[0105] The above are only the preferred embodiments of the present application. Although the present application has been disclosed above in preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can make many possible changes and modifications to the technical solution of the present application, or modify it into equivalent embodiments with equivalent changes, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application without departing from the content of the technical solution of the present application shall still be within the scope of protection of the technical solution of the present application.

Claims

1. A prediction method for the telecentric deviation of a projection objective of a lithography machine, characterized in that Including: Calculating an initial telecentricity based on an initial pattern center offset and a defocus variation amount on a wafer; When there is a single interference in the projection system, calculating a telecentricity when introducing the single interference based on the initial telecentricity, the initial pattern center offset, and a pattern center offset when introducing the single interference, as a first equivalent telecentricity; When there are multiple interferences in the projection system, calculating a telecentricity when introducing the multiple interferences based on the initial telecentricity and telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, as a second equivalent telecentricity; When there is a single interference in the projection system, calculating a pattern center offset at different defocuses based on the first equivalent telecentricity as a first telecentric deviation; When there are multiple interferences in the projection system, calculating a pattern center offset at different defocuses based on the second equivalent telecentricity as a second telecentric deviation.

2. The method according to claim 1, wherein The calculating an initial telecentricity based on an initial pattern center offset and a defocus variation amount on a wafer includes: ； wherein, is the initial telecentricity, is the initial pattern center offset, is the defocus variation.

3. The method according to claim 1, characterized in that, The calculating a telecentricity when introducing the single interference based on the initial telecentricity, the initial pattern center offset, and a pattern center offset when introducing the single interference, as a first equivalent telecentricity, includes: ； Wherein, is the first equivalent telecentricity, is the initial pattern center offset, is the pattern center offset when introducing the single interference, is the initial telecentricity.

4. The method according to claim 1, wherein The calculating a telecentricity when introducing the multiple interferences based on the initial telecentricity and telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, as a second equivalent telecentricity, includes; ; wherein, is the second equivalent telecentricity, , …… are the telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, wherein n is a positive integer, is the initial telecentricity.

5. A prediction device for the telecentric deviation of a projection objective of a lithography machine, characterized in that, Including: An initial telecentricity calculation unit for calculating an initial telecentricity based on an initial pattern center offset and a defocus variation amount on a wafer; A first equivalent telecentricity calculation unit for, when there is a single interference in the projection system, calculating a telecentricity when introducing the single interference based on the initial telecentricity, the initial pattern center offset, and a pattern center offset when introducing the single interference, as a first equivalent telecentricity; A second equivalent telecentricity calculation unit for, when there are multiple interferences in the projection system, calculating a telecentricity when introducing the multiple interferences based on the initial telecentricity and telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, as a second equivalent telecentricity; A first telecentric deviation calculation unit for, when there is a single interference in the projection system, calculating a pattern center offset at different defocuses based on the first equivalent telecentricity as a first telecentric deviation; A second telecentric deviation calculation unit for, when there are multiple interferences in the projection system, calculating a pattern center offset at different defocuses based on the second equivalent telecentricity as a second telecentric deviation.

6. The device according to claim 5, characterized in that The initial telecentricity calculation unit is specifically configured to calculate the initial telecentricity : ； wherein, is the initial telecentricity, is the initial pattern center offset, is the defocus variation.

7. The device according to claim 5, characterized in that The first equivalent telecentricity calculation unit is specifically configured to calculate the first equivalent telecentricity : ； wherein, is the first equivalent telecentricity, is the initial pattern center offset, is the pattern center offset when introducing the single interference, is the initial telecentricity.

8. The device according to claim 5, characterized in that, The second equivalent telecentricity calculation unit is specifically configured to calculate the second equivalent telecentricity : ; Among them, is the second equivalent telecentricity, , …… are the telecentricities respectively corresponding to the respective interferences when introducing the multiple interferences, where n is a positive integer, is the initial telecentricity.

9. A prediction system for the telecentric deviation of a projection objective of a lithography machine, characterized in that, Including: A memory for storing a computer program; A processor for, when executing the computer program, implementing the steps of the method for predicting a telecentric deviation of a projection objective of a lithography machine as described in any one of claims 1-4.

10. A computer-readable medium, characterized in that, A computer program is stored on a computer-readable medium, and when the computer program is processed and executed, the steps of the method for predicting a telecentric deviation of a projection objective of a lithography machine as described in any one of claims 1-4 are implemented.

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