A method for preparing a low quality factor micro-cantilever probe and the micro-cantilever probe

Abstract

This invention provides a method for fabricating a low-quality-factor microcantilever probe. The method includes: fabricating micro / nano structures on the cantilever beam of the microcantilever probe using a microfabrication method involving the deposition of non-metallic oxides via focused ion beam (FIB), introducing structural defects to increase the mechanical and thermal noise of the microcantilever probe, improve its intrinsic energy dissipation rate, and reduce its quality factor, thus obtaining the low-quality-factor microcantilever probe. The microfabrication method using FIB deposition of non-metallic oxides proposed in this invention can effectively reduce the Q value of the microcantilever probe and improve the imaging rate of AM-AFM and SNOM in a vacuum environment.

Description

Technical Field

[0001] This invention belongs to the field of scanning probe microscopy, specifically relating to a method for preparing a low-quality factor microcantilever probe and the microcantilever probe thereof. Background Technology

[0002] The microcantilever probe is the mechanical sensing element in an amplitude-modulated atomic force microscope (AM-AFM). When the AFM is operating, the microcantilever probe vibrates near its natural frequency, and its amplitude is maintained at a constant value by a closed-loop feedback control system that adjusts the distance between the probe tip and the sample in real time. The morphology of the sample surface can be obtained by scanning the sample surface in two dimensions with the probe tip. Simultaneously, the microcantilever probe also serves as the optical sensing element in an AM-AFM-based scanning near-field optical microscope (SNOM). As the probe vibrates, the distance between its tip and the sample changes periodically, and the near-field optical signal scattered from the probe tip is also periodically modulated. Since the dependence of the near-field optical signal intensity on the probe tip-sample surface distance is non-linear, the near-field optical signal reaching the photodetector contains high-order harmonic components of the probe vibration frequency. Near-field optical imaging of the sample surface can be achieved by extracting these high-order harmonic signals using a lock-in amplifier.

[0003] During AFM and SNOM scanning imaging, the amplitude of the microcantilever probe changes with the sample surface morphology. The controller senses this amplitude change and implements feedback adjustment to maintain the probe amplitude at a set value. Since the response rate of the circuit part in the feedback loop is much greater than that of the mechanical part, the dynamic response time of the microcantilever probe becomes a key factor limiting the imaging rate of AFM and SNOM. The response time of the microcantilever probe amplitude is given by the formula... Where Q is the quality factor (Q) of the probe, and ω0 is the natural angular frequency of the probe. Therefore, the Q value of the microcantilever probe determines the imaging rate of AM-AFM and SNOM. The Q value depends on the rate of energy dissipation of the probe's vibration: the faster the energy dissipation, the smaller the Q. In gaseous and liquid environments, greater medium damping is the main pathway for probe vibration energy dissipation, resulting in a smaller probe Q; while in a vacuum environment, the smaller intrinsic energy dissipation of the probe leads to a larger Q value. In conclusion, to improve the imaging rate of AM-AFM and SNOM in a vacuum environment, we must use microcantilever probes with low intrinsic quality factors.

[0004] The main difference between current technologies and this invention lies in the fabrication methods of low-quality-factor microcantilever probes. The former primarily uses laser etching and focused ion beam etching. However, laser etching suffers from limitations in its optical system's maximum resolution, making it unsuitable for fabricating nanoscale fine structures. Furthermore, its micrometer-level positioning accuracy makes it prone to deviations in the processing position. In contrast, focused ion beam etching, with its deeper etching depth and the presence of re-deposition, leads to excessively long processing times. Therefore, the inability to fabricate nanoscale fine structures, the susceptibility to deviations in the processing position, and the excessively long processing times are pressing issues that need to be addressed in the fabrication of low-quality-factor microcantilever probes. Summary of the Invention

[0005] Therefore, the purpose of this invention is to overcome the deficiencies in the prior art and provide a method for preparing a low-quality-factor microcantilever probe and the microcantilever probe itself. This invention directly performs focused ion beam deposition of SiO2 without damaging the original microcantilever probe. Compared to laser etching, the processing precision can reach the nanometer level, and the processing efficiency is also significantly improved. Finally, by testing in a low-temperature-vacuum system, the Q-value of the microcantilever probe after SiO2 deposition can reach below 1000. The results show that the focused ion beam deposition method for non-metallic oxides can more effectively reduce the Q-value of the microcantilever probe system, thereby further improving the imaging rate of AM-AFM and SNOM in a vacuum environment.

[0006] Before describing the content of this invention, the following terms are defined as follows:

[0007] The term "AM-AFM" refers to Amplitude Modulated Atomic Force Microscope.

[0008] The term "SNOM" refers to scanning near-field optical microscopy based on amplitude modulation atomic force microscopy.

[0009] The term "FIB" refers to: Focused Ion Beam.

[0010] To achieve the above objectives, a first aspect of the present invention provides a method for fabricating a low-quality-factor microcantilever probe, the method comprising: fabricating micro / nano structures on the cantilever beam of the microcantilever probe using focused ion beam deposition, thereby introducing structural defects to obtain the low-quality-factor microcantilever probe; wherein:

[0011] The micro / nano structure is a rectangular array or a circular array.

[0012] According to the preparation method of the first aspect of the present invention, the preparation method further includes: depositing non-metallic oxides on the cantilever beam surface and / or interface of the microcantilever probe by focusing an ion beam, thereby changing the structure of the cantilever beam surface and / or interface of the microcantilever probe, resulting in increased mechanical thermal noise and increased thermoelastic damping during bending.

[0013] Preferably, the non-metallic oxide is SiO2.

[0014] According to a preparation method of a first aspect of the present invention, the preparation method includes the following steps:

[0015] (1) Preparation of focused ion beam deposition pattern;

[0016] (2) Import the pattern prepared in step (1) into the focused ion beam system;

[0017] (3) Place the microcantilever probe to be processed into the sample chamber, ensuring that the plane of the cantilever beam to be processed is perpendicular to the focused ion beam; and

[0018] (4) Set the working parameters and start the deposition. After deposition, a low quality factor microcantilever probe is obtained.

[0019] According to the preparation method of the first aspect of the present invention, in step (1): the layout is a rectangular array or a circular array.

[0020] According to the preparation method of the first aspect of the present invention, in step (2), after the pattern is imported into the focused ion beam system, the method further includes setting the length, width and thickness of the deposited pattern in the control system.

[0021] According to the preparation method of the first aspect of the present invention, in step (2):

[0022] The length of the deposition pattern is 50 μm to 100 μm, preferably 75 μm to 90 μm, and more preferably 80 to 90 μm;

[0023] The width of the deposited pattern is 10µm to 40µm, preferably 20µm to 35µm, more preferably 30µm to 35µm; and / or

[0024] The thickness of the deposited pattern is 100nm to 300nm, preferably 150nm to 250nm, and more preferably 200nm.

[0025] According to the preparation method of the first aspect of the present invention, step (3) further includes: fixing the microcantilever probe to be processed on the sample stage of the focused ion beam, and then loading it into the sample chamber, and adjusting the position and tilt angle of the sample stage so that the plane of the cantilever beam to be processed is perpendicular to the focused ion beam;

[0026] Preferably, the microcantilever probe to be processed is a bulk probe or an unpackaged whole wafer.

[0027] According to the preparation method of the first aspect of the present invention, step (4) further includes: adjusting the micromachining interface to the focusing surface of the focused ion beam and setting the working parameters of the focused ion beam deposition;

[0028] Preferably, the operating parameters are selected from one or more of the following: accelerating voltage, beam current, deposition path, and residence time;

[0029] More preferably, the deposition path is in series and / or in parallel, with parallel being the most preferred.

[0030] According to the preparation method of the first aspect of the present invention, in step (4):

[0031] The voltage for focused ion beam deposition is 10kV to 50kV, preferably 20kV to 40kV, and most preferably 30kV;

[0032] The beam current of the focused ion beam deposition is 1nA to 5nA, preferably 2nA to 4nA, and most preferably 3nA;

[0033] The thickness of the focused ion beam deposition is 100 nm to 500 nm, preferably 100 nm to 300 nm, and most preferably 200 nm; and / or

[0034] The dwell time for the focused ion beam deposition is 0.5 μs to 3 μs, preferably 1 μs to 2 μs, and most preferably 1 μs.

[0035] A second aspect of the present invention provides a low quality factor microcantilever probe, which is prepared according to the preparation method described in the first aspect;

[0036] Preferably, the low quality factor microcantilever probe is a vacuum AM-AFM and / or vacuum low temperature SNOM microcantilever probe.

[0037] According to a specific embodiment of the present invention, the FIB non-metallic oxide SiO2 deposition process steps are as follows:

[0038] (1) Preparation of FIB deposition pattern.

[0039] (2) Import the pattern into the pattern system of the focused ion beam, and then set the length, width and thickness of the deposited pattern in the control system.

[0040] (3) Fix the probe to be processed on the sample stage of the FIB and then load it into the sample chamber. Adjust the position and tilt angle of the sample stage so that the plane of the cantilever beam to be processed is perpendicular to the ion beam.

[0041] (4) Set appropriate working parameters for ion beam deposition, adjust the processing interface to the focusing surface of the ion beam, and start deposition.

[0042] To address the need to improve the scanning imaging rate of vacuum AM-AFM and vacuum-low temperature SNOM, a microfabrication method using focused ion beam (FIB) deposition is proposed. This method involves designing surface / interface structures on the microcantilever beam of the probe, introducing structural defects to increase the intrinsic energy dissipation rate of the probe system, and thus preparing probes with low quality factors.

[0043] Microstructures and nanostructures are fabricated on the microcantilever beams of a probe using FIB (Fiber Optic Injection) deposition of SiO2. This introduces structural defects, which macroscopically increase the mechanical and thermal noise of the probe, raise the intrinsic energy dissipation rate of the microcantilever probe, and lower its quality factor Q. Simultaneously, the SiO2 deposition alters the surface / interface structure of the cantilever beam. When the probe undergoes elastic deformation, the difference in thermal expansion coefficients of different materials leads to a change in the temperature gradient. The increased thermoelastic damping further increases the intrinsic energy dissipation rate of the probe system, reducing its Q value.

[0044] According to a specific embodiment, the method for preparing the low-quality factor microcantilever probe of the present invention includes:

[0045] First, adjust the sample position and select a suitable ion beam current. There are two methods for SiO2 deposition: electron beam deposition and ion beam deposition. The tilt angle for electron beam deposition is 0 degrees, while the tilt angle for ion beam deposition is 52 degrees. Electron beam deposition does not damage the original structure, but the deposition effect is not significant. Therefore, the ion beam deposition function for SiO2 is selected here.

[0046] Then, the SiO2 deposition needle is inserted close to the sample surface. Under the induction of the ion beam, the SiO2 gas can be deposited on the surface of the solid material. By adjusting parameters such as the ion beam spot size, beam current, scanning path, and time, the desired pattern can be deposited on the material surface. Depending on the size to be processed, a suitable electron beam current is selected. The structure of this invention belongs to micron-level processing, generally using 1 nA or higher.

[0047] There are two types of path selection in the pattern array deposition process: series and parallel. When depositing over a large area, the parallel method can avoid the drift of the processing position caused by the concentrated accumulation of charge, so the parallel method is preferred.

[0048] According to another specific implementation, by depositing non-metallic oxides on the cantilever beam surface and / or interface of the microcantilever probe using a focused ion beam, the structure of the cantilever beam surface and / or interface of the microcantilever probe is changed, resulting in increased mechanical and thermal noise and increased thermoelastic damping during bending, thereby effectively reducing the quality factor of the probe.

[0049] The method for preparing the low-quality factor microcantilever probe of the present invention can have, but is not limited to, the following beneficial effects:

[0050] 1. Compared with the prior art, the present invention introduces a new structure on the surface without destroying the original microcantilever probe structure, which can reduce the Q value to a greater extent, thereby effectively shortening the response time of the microcantilever probe amplitude in the vacuum-cryo system and improving the imaging rate of the system.

[0051] 2. This invention utilizes FIB deposition of SiO2 micromachining to fabricate micro-nano structures on the micro-cantilever beam of the probe, introducing structural defects. The macroscopic manifestation of this is an increase in the mechanical and thermal noise of the probe, which increases the intrinsic energy dissipation rate of the micro-cantilever probe and reduces its quality factor Q.

[0052] 3. The deposition of SiO2 leads to changes in the surface and / or interface structure of the cantilever beam. When the probe undergoes elastic deformation, the difference in the thermal expansion coefficients of different materials leads to changes in the temperature gradient. The increase in thermoelastic damping further increases the intrinsic energy dissipation rate of the probe system, reduces its Q value, and improves the imaging rate of AM-AFM and SNOM in a vacuum environment. Attached Figure Description

[0053] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings, wherein:

[0054] Figure 1 A flowchart illustrating the preparation method of the low-quality factor microcantilever probe of the present invention is shown.

[0055] Figure 2 The image shows a scanning electron microscope (SEM) image of a low-quality-factor microcantilever probe with a rectangular array of fabricated patterns prepared according to Example 1 of the present invention; wherein, Figure 2 A shows a scanning electron microscope image of a low quality factor microcantilever probe with a rectangular array deposition thickness of 100 nm. Figure 2 B shows a scanning electron microscope image of a low quality factor microcantilever probe with a rectangular array deposition thickness of 200 nm.

[0056] Figure 3 The image shows a scanning electron microscope (SEM) image of a low-quality-factor microcantilever probe with a circular array of fabricated patterns prepared according to Example 2 of the present invention; wherein, Figure 3 A shows a scanning electron microscope image of a low quality factor microcantilever probe with a parallel deposition path; Figure 3B shows a scanning electron microscope image of a low-quality-factor microcantilever probe with a tandem deposition path.

[0057] Figure 4 The layouts of focused ion beam deposition in embodiments 1 and 2 of the present invention are shown. Figure 4 A shows a layout of the focused ion beam deposition rectangular array of Embodiment 1 of the present invention; Figure 4 B shows a layout of the focused ion beam deposition circular array of Embodiment 2 of the present invention.

[0058] Figure 5 The comparison of Q values ​​of the low-quality-factor microcantilever probe before and after focused ion beam processing in Example 3 is shown; wherein, Figure 5 A shows a microcantilever probe before and after depositing a 200 nm thick SiO2 layer in a rectangular array pattern, placed in a vacuum-cryocondition (P = 2.0 × 10⁻⁶). -6 Q-value test results (Pa,T=90K); Figure 5 B shows the microcantilever probe before and after parallel SiO2 deposition in a circular array pattern, placed in a vacuum-cryocondition (P = 2.0 × 10⁻⁶). -6 Q-value test results (Pa, T=90K). Detailed Implementation

[0059] The present invention will be further illustrated below with specific embodiments. However, it should be understood that these embodiments are merely for more detailed and specific illustration and should not be construed as limiting the present invention in any way.

[0060] This section provides a general description of the materials and testing methods used in the experiments of this invention. While many of the materials and methods of operation used to achieve the objectives of this invention are well known in the art, the invention is still described in as much detail as possible herein. It will be apparent to those skilled in the art that, unless otherwise stated in the context, the materials and methods of operation used in this invention are well known in the art.

[0061] The reagents and instruments used in the following examples are as follows:

[0062] Material:

[0063] The AFM microcantilever probe, model Arrow NCPt, was purchased from Nano World, Switzerland.

[0064] The SNOM microcantilever probe, model Arrow NCPt, was purchased from Nano World, Switzerland.

[0065] The conductive adhesive was purchased from SPI Corporation, USA.

[0066] instrument:

[0067] The focused ion beam control system, model Nova200NanoLab, was purchased from Thermo Fisher Scientific Electron Microscopy, Inc.

[0068] Example 1

[0069] This embodiment illustrates the preparation method of the low-quality factor microcantilever probe of the present invention.

[0070] Figure 1 A flowchart illustrating the preparation method of the low-quality factor microcantilever probe of the present invention is shown.

[0071] (1) Preparation of FIB deposition patterns: Code is written using the programming program built into the focused ion beam system to form rectangular and circular array deposition patterns; or drawings are designed and processed using CAD / Photoshop. In this embodiment, Photoshop is used. The deposition patterns are as follows: Figure 4 As shown, Figure 4 A shows a rectangular array layout for focused ion beam deposition according to Embodiment 1 of the present invention.

[0072] (2) Import the pattern prepared in step (1) into the pattern system of the focused ion beam, and then set the length, width and thickness of the deposited pattern in the control system. In this embodiment, the length of the deposited pattern is 90um, the width is 35um and the thickness is 100nm or 200nm.

[0073] (3) Fix the microcantilever probe to be processed on the sample stage of the FIB, and then load it into the sample chamber. By adjusting the position and tilt angle of the sample stage, the tilt angle in this embodiment is 52°, so that the plane of the cantilever beam to be processed is perpendicular to the ion beam.

[0074] (4) As shown in Table 1, set the working parameters of focused ion beam deposition, adjust the processing interface to the focusing surface of the ion beam, start deposition, and obtain the low quality factor microcantilever probe after deposition.

[0075] Table 1 Operating parameters for focused ion beam rectangular array deposition

[0076] Deposition voltage 30kV Deposition beam 3nA Deposition thickness 100 / 200nm Duration of stay 1μs

[0077] Figure 2 The image shows a scanning electron microscope (SEM) image of a low-quality-factor microcantilever probe with a rectangular array of fabricated patterns prepared according to Example 1 of the present invention; wherein, Figure 2 A shows a scanning electron microscope image of a low quality factor microcantilever probe with a rectangular array deposition thickness of 100 nm. Figure 2 B shows a scanning electron microscope image of a low quality factor microcantilever probe with a rectangular array deposition thickness of 200 nm.

[0078] Example 2

[0079] This embodiment illustrates the preparation method of the low-quality factor microcantilever probe of the present invention.

[0080] (1) Preparation of FIB deposition patterns: Code is written using the programming program built into the focused ion beam system to form rectangular and circular array deposition patterns; or drawings are designed and processed using CAD / Photoshop. In this embodiment, Photoshop is used. The deposition patterns are as follows: Figure 4 As shown, Figure 4 B shows a circular array layout for focused ion beam deposition according to Embodiment 2 of the present invention.

[0081] (2) Import the pattern prepared in step (1) into the pattern system of the focused ion beam, and then set the length, width and thickness of the deposition pattern in the control system. In this embodiment, the length of the deposition pattern is 90um, the width is 35um and the thickness is 200nm. The deposition paths are parallel and series, respectively.

[0082] (3) Fix the microcantilever probe to be processed on the sample stage of the FIB, and then load it into the sample chamber. By adjusting the position and tilt angle of the sample stage, the tilt angle in this embodiment is 52°, so that the plane of the cantilever beam to be processed is perpendicular to the ion beam.

[0083] (4) As shown in Table 2, set the working parameters of focused ion beam deposition, adjust the processing interface to the focusing surface of the ion beam, start deposition, and obtain the low quality factor microcantilever probe after deposition.

[0084] Table 2 Operating parameters for focused ion beam circular array deposition

[0085] Deposition voltage 30kV Deposition beam 3nA Deposition thickness 200nm Duration of stay 1μs

[0086] Figure 3 The image shows a scanning electron microscope (SEM) image of a low-quality-factor microcantilever probe with a circular array of fabricated patterns prepared according to Example 2 of the present invention; wherein, Figure 3 A shows a scanning electron microscope image of a low quality factor microcantilever probe with a parallel deposition path; Figure 3 B shows a scanning electron microscope image of a low-quality-factor microcantilever probe with a tandem deposition path.

[0087] Example 3

[0088] This embodiment is used to illustrate the Q-value test of the low-quality factor microcantilever probe of the present invention.

[0089] The low-quality-factor microcantilever probes (rectangular and circular arrays) prepared in Examples 1 and 2 were placed in the same vacuum-cryopreservative environment (P = 2.0 × 10⁻⁶) as the cantilever probes before focused ion beam deposition treatment. -6 The Q value was tested at Pa (T = 90K), and the test results are as follows: Figure 5 As shown. Figure 5 The comparison of Q values ​​of the low-quality-factor microcantilever probe before and after focused ion beam processing in Example 3 is shown; wherein, Figure 5 A shows a microcantilever probe before and after 200 nm thick SiO2 deposition in a rectangular array pattern, placed in a vacuum-cryocondition (P = 2.0 × 10⁻⁶). -6 Q-value test results (Pa,T=90K); Figure 5 B shows the microcantilever probes before and after SiO2 deposition along a parallel path in a circular array pattern, placed in a vacuum-cryocondition (P = 2.0 × 10⁻⁶). -6 The Q-value test results (Pa, T=90K) show that the low quality factor microcantilever probes (rectangular array and circular array) of the focused ion beam deposition of SiO2 of the present invention can effectively reduce the Q-value of the microcantilever probe.

[0090] Comparative Example 1

[0091] This comparative example is used to compare the low-quality factor microcantilever probe prepared by the preparation method of the present invention with the prior art microcantilever probe.

[0092] As shown in Table 3, this invention directly performs focused ion beam deposition of SiO2 without damaging the original microcantilever probe. Compared with laser etching, the processing precision can reach the nanometer level, and the processing efficiency is also greatly improved. Finally, by testing in a low-temperature-vacuum system, the Q value of the microcantilever probe after SiO2 deposition can reach below 1000, while the Q value after laser etching is 1808, and the Q value after focused ion beam etching is 8182. The results show that the method of focused ion beam deposition of non-metallic oxides can more effectively reduce the Q value of the microcantilever probe system, thereby further improving the imaging rate of AM-AFM and SNOM in a vacuum environment.

[0093] Table 3 Comparison of Q values ​​before and after focused ion beam deposition, laser etching, and focused ion beam etching.

[0094]

[0095] Although the invention has been described to a certain extent, it is apparent that appropriate variations can be made to the various conditions without departing from the spirit and scope of the invention. It is understood that the invention is not limited to the described embodiments, but falls within the scope of the claims, which include equivalent substitutions for each of the elements.

Claims

1. A method for preparing a low-quality factor microcantilever probe, characterized in that, The preparation method comprises the following steps: The micro-nano structure is a rectangular array or a circular array. The surface and / or interface structure of the micro-cantilever probe is changed by depositing non-metallic oxide on the surface and / or interface of the micro-cantilever probe by the focused ion beam, so that the mechanical thermal noise is increased, and the thermal elastic damping in the bending process is increased.

2. The production method according to claim 1, characterized by, The non-metallic oxide is SiO2.

3. The production method according to claim 1 or 2, characterized by, The preparation method comprises the following steps: (1) preparing a focused ion beam deposition layout; (2) introducing the layout prepared in step (1) into a focused ion beam system; (3) placing the micro-cantilever probe to be processed into a sample bin, so that the plane of the cantilever beam to be processed is perpendicular to the focused ion beam; and (4) setting the working parameters, starting deposition, and obtaining the low-quality factor micro-cantilever probe after deposition.

4. The production method according to claim 3, characterized by, In step (1), the layout is a rectangular array or a circular array.

5. The preparation method according to claim 3, characterized in that, In step (2), after the layout is introduced into the focused ion beam system, the length, width and thickness of the deposition pattern are set in the control system.

6. The production method according to claim 5, wherein In step (2), the length of the deposition pattern is 50-100 um; the width of the deposition pattern is 10-40 um; and / or the thickness of the deposition pattern is 100-300 nm.

7. The production method according to claim 6, wherein In step (2), the length of the deposition pattern is 75-90 um; the width of the deposition pattern is 20-35 um; and / or the thickness of the deposition pattern is 150-250 nm.

8. The preparation method according to claim 7, characterized in that, In step (2), the length of the deposition pattern is 80-90 um; the width of the deposition pattern is 30-35 um; and / or the thickness of the deposition pattern is 200 nm.

9. The preparation method according to claim 3, characterized in that, In step (3), the micro-cantilever probe to be processed is fixed on the sample table of the focused ion beam, and then is loaded into the sample bin. The position and inclination angle of the sample table are adjusted so that the plane of the cantilever beam to be processed is perpendicular to the focused ion beam.

10. The method of claim 9, wherein, The micro-cantilever probe to be processed is a bulk probe or an entire wafer that has not been divided.

11. The preparation method according to claim 3, characterized in that, In step (4), the micro-processing interface is adjusted to the focusing plane of the focused ion beam, and the working parameters of the focused ion beam deposition are set.

12. The method of claim 11, wherein, The working parameters are selected from one or more of the following: acceleration voltage, beam current, deposition path, and dwell time.

13. The method of claim 12, wherein, The deposition path is in series and / or in parallel.

14. The method of claim 13, wherein, The deposition path is in parallel.

15. The preparation method according to claim 3, characterized in that, In step (4), the voltage of the focused ion beam deposition is 10-50 kV; the beam current of the focused ion beam deposition is 1-5 nA; the thickness of the focused ion beam deposition is 100-500 nm; and / or the dwell time of the focused ion beam deposition is 0.5-3 us.

16. The method of claim 15, wherein, In step (4), the voltage of the focused ion beam deposition is 20-40 kV; the beam current of the focused ion beam deposition is 2-4 nA; the thickness of the focused ion beam deposition is 100-300 nm; and / or the dwell time of the focused ion beam deposition is 0.5-3 us. The focused ion beam deposition has a residence time of 1-2 microseconds.

17. The method of claim 16, wherein the method further comprises, In the step (4): The focused ion beam deposition has a voltage of 30 kV. The focused ion beam deposition has a beam current of 3 nA. The focused ion beam deposition has a thickness of 200 nm; and / or The focused ion beam deposition has a residence time of 1 microsecond.

18. A low quality factor micro-cantilever probe, characterized by, The low quality factor micro-cantilever probe is prepared according to the preparation method in any one of claims 1-17.

19. The low fines factor microcantilever probe of claim 18, wherein, The low quality factor micro-cantilever probe is a vacuum AM-AFM and / or a vacuum cryogenic SNOM micro-cantilever probe.

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