A laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device

Abstract

The present invention discloses a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device, comprising a DFB laser array, a lithium niobate optical waveguide array on an insulator, and a gallium arsenide substrate. The DFB laser array and the lithium niobate optical waveguide array on an insulator are respectively placed on the gallium arsenide substrate, and the DFB laser is bonded to the gallium arsenide substrate by wafer bonding technology to ensure that the output light of the DFB laser is highly matched with the lithium niobate optical waveguide; each lithium niobate optical waveguide has a DFB laser for pumping. The present invention integrates multiple DFB lasers and multiple lithium niobate optical waveguides on a gallium arsenide substrate by wafer bonding and ion implantation technology. The photonic device outputs lasers of different wavelengths through energy level transitions of rare earth ions, thereby achieving mixed output of multiple wavelengths and multi-mode dynamic anti-counterfeiting effects. At the same time, the photonic device has a compact structure and high integration, and can achieve efficient photonic device integration.

Description

Technical Field

[0001] The invention relates to the field of waveguide technology, in particular to a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device. Background Art

[0002] Substances that can release absorbed energy in the form of photons are called luminescent materials. There are many luminescent materials in nature, but most of them are artificially synthesized. Usually luminescent materials are composed of matrix compounds and activators, in which some transition metals (Ag, Cu, Mn, Bi, Pb) and rare earth elements act as activators. Rare earth luminescent materials are luminescent materials that use artificially synthesized compounds as matrix and lanthanide rare earth ions as activators. There are 17 rare earth elements, all located in the third subgroup of the periodic table. Among them, 15 lanthanide elements are in the same period, and the other two are scandium and yttrium. Since the 4f or 5d electronic configuration of rare earth atoms is in an unfilled state and is shielded by the outside world, rare earth atoms have rich electronic energy levels. There are nearly 200,000 energy level channels that can achieve transitions, of which more than 30,000 are observable spectral lines. Therefore, the luminescence range of rare earth luminescent materials includes the ultraviolet, visible and near-infrared regions. This is one of the reasons why the luminescence colors of rare earth luminescent materials are extremely rich, especially in the visible light range. The emission efficiency is very strong. This luminescence characteristic enables rare earth luminescent materials to maintain a dominant position in the research and application of the entire luminescent material.

[0003] LiNbO3 is a synthetic piezoelectric material. It is widely used as a matrix for rare earth luminescent materials due to its good chemical stability, low phonon energy, non-toxicity, and simple preparation. Lithium niobate crystals doped with rare earth ions not only have the nonlinear optical properties of lithium niobate crystals, but also contain the laser properties of rare earth ions. The combination of the two will achieve better performance. At present, most lithium niobate-based rare earth luminescent materials are some single-doped monochromatic down-conversion luminescent materials, and multi-color luminescence is rarely achieved in the same matrix. Summary of the invention

[0004] The present invention provides a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device, which is used to increase the light-emitting mode in the same matrix material, obtain a multi-mode dynamic anti-counterfeiting effect, realize multi-color conversion light-emitting in the same matrix, and realize a high-level light-emitting anti-counterfeiting strategy.

[0005] To achieve the above effects, the technical solution of the present invention is as follows:

[0006] A DFB laser array includes a plurality of DFB lasers, wherein the DFB lasers include an n-type GaAs cap layer, an n-type Al x Ga 1-x As transition layer, n-type Al x Ga1-x As confinement layer, n-type Al x Ga 1-x As waveguide layer, quantum well active region, p-type Al x Ga 1-x As waveguide layer, p-type Al x Ga 1-x As confinement layer, p-type Al x Ga 1-x As transition layer, p-type GaAs cap layer.

[0007] Furthermore, a p-side metal electrode and an n-side metal electrode are provided on the DFB laser, and the p-side metal electrode and the n-side metal electrode are used to provide electrical connection for the DFB laser.

[0008] A method for preparing a DFB laser array comprises the following steps: epitaxially growing the DFB laser using a MOCVD metal organic chemical vapor deposition method, epitaxially growing an n-type GaAs cap layer, an n-type Al x Ga 1-x As transition layer, n-type Al x Ga 1-x As confinement layer, n-type Al x Ga 1-x As waveguide layer, quantum well active region, p-type Al x Ga 1-x As waveguide layer, p-type Al x Ga 1-x As confinement layer, p-type Al x Ga 1-x As transition layer, p-type GaAs cap layer; after the epitaxial growth is completed, the DFB laser is grating etched; a high reflection film and an anti-reflection film are evaporated on the reflection end face and the emission end face of the DFB laser respectively to obtain a DFB laser, and multiple DFB lasers constitute a DFB laser array.

[0009] It should be noted that the DFB laser, the p-side metal electrode and the n-side metal electrode form a DFB laser chip structure, and the DFB laser emits light by energizing the p-side metal electrode and the n-side metal electrode. The p-side metal electrode and the n-side metal electrode constitute a metal electrode. The lithium niobate optical waveguide is a ridge waveguide. The grating adopts a Bragg grating.

[0010] Furthermore, the n-type GaAs cap layer has a doping concentration of 1×10 17 ~5×10 19 cm -3 ; n-type Al x Ga 1-x As transition layer, doping concentration is 5×10 17 ~1×10 19cm -3 ; n-type Al x Ga 1-x As confinement layer, doping concentration is 1×10 18 ~1×10 19 cm -3 ; n-type Al x Ga 1-x As waveguide layer, undoped; quantum well active region; p-type Al x Ga 1-x As waveguide layer, undoped; p-type Al x Ga 1-x As confinement layer, doping concentration is 1×10 18 ~1×10 19 cm -3 ; p-type Al x Ga 1-x As transition layer, doping concentration is 5×10 17 ~1×10 19 cm -3 ; p-type GaAs cap layer, doping concentration is 1×10 17 ~5×10 20 cm -3 ; The material of the high reflection film is one or more of Ta2O5, Si, and HfO2, and the material of the anti-reflection film is one or more of CeF3, MgF2, Al2O3, and ZrO2.

[0011] It should be noted that Al x Ga 1-x The value range of x in As is 0<x<1.

[0012] It should be noted that the grating period, duty cycle and etching depth of the DFB laser are determined according to actual needs. The materials of the quantum well active region in the DFB laser are GaAs, In y Ga 1-y As, one or more of which GaAs is a barrier, In y Ga 1-y As is a potential well, y has a value range of 0<y<1, and the specific value of y depends on the wavelength required for rare earth ion pumping in the top lithium niobate optical waveguide. The DFB laser is one or more of a buried grating DFB laser, a surface grating DFB laser, a ridge surface grating DFB laser, and a side-coupled DFB laser.

[0013] A lithium niobate optical waveguide array on insulator comprises a lithium niobate optical waveguide array and a SiO2 layer, wherein the lithium niobate optical waveguide array comprises a plurality of lithium niobate optical waveguides, wherein the lithium niobate optical waveguides are wrapped by the SiO2 layer, and a SiO2 insulating layer is deposited on the lithium niobate optical waveguide to protect the lithium niobate optical waveguide; the lithium niobate optical waveguide comprises a lithium niobate optical waveguide input end, a first tapered transition waveguide, a lithium niobate optical waveguide transmission section, a second tapered transition optical waveguide, and a lithium niobate optical waveguide output end which are connected in sequence, and a DFB laser is located near the lithium niobate optical waveguide input end for injecting laser into the lithium niobate optical waveguide input end.

[0014] Furthermore, a grating is provided in the lithium niobate optical waveguide transmission section, and the grating includes a forward grating and a backward grating, the forward grating is located close to the first tapered transition waveguide, and the backward grating is located close to the second tapered transition optical waveguide.

[0015] It should be noted that the length and width of the lithium niobate optical waveguide transmission section are set according to needs. The SiO2 insulating layer can prevent light leakage.

[0016] It should be noted that the forward grating and the backward grating are formed by etching, the forward grating has a total reflection effect, and the backward grating has a semi-reflective and semi-transmissive effect. The laser input into the lithium niobate optical waveguide can oscillate between the forward grating and the backward grating. When the light intensity reaches a certain level, the laser is output from the backward grating.

[0017] A method for preparing a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device comprises the following steps:

[0018] Step 1: providing a lithium niobate single crystal wafer, and depositing a SiO2 layer on the lithium niobate single crystal wafer by using a PECVD plasma enhanced chemical vapor deposition method;

[0019] Step 2: After the SiO2 layer is deposited, H and He ions are implanted into the lithium niobate single crystal using high-energy ion implantation technology to form a damaged layer composed of ion implantation. The energy of the ion implantation is 10 to 1000 keV and the implantation dose is 1×10 15 cm -2 ~1×10 20 cm -2 After the ion implantation is completed, the damaged layer and SiO2 layer are subjected to CMP chemical mechanical polishing to reduce the surface roughness of the lithium niobate single crystal to less than 1nm;

[0020] Step 3: Provide a GaAs substrate, bond the polished SiO2 layer to the GaAs substrate; activate the GaAs substrate and the SiO2 layer surface, and after activation, transfer the two wafers consisting of the GaAs substrate and the SiO2 layer to the chamber of the wafer bonding machine for wafer bonding, and combine them into one, and reduce the pressure in the chamber to 1×10 -5 Pa or less, applying a bonding force of 1 to 100 kN and a bonding time of 1 to 60 min to form a synthesized wafer bonding pair;

[0021] Step 4: After the wafer bonding is completed, the synthesized wafer bonding pair is transferred to the annealing furnace; the temperature in the annealing furnace is slowly increased at a rate of 2°C / min until the temperature in the furnace rises to between 100 and 300°C; during the heating process, high-purity nitrogen is continuously introduced into the furnace at a flow rate of 3 to 10L / h; when the annealing time reaches 10h, the heating in the furnace is stopped; after the temperature in the chamber is naturally cooled to room temperature, the wafer bonding pair in the chamber is taken out; the damaged layer in the lithium niobate single crystal expands under the action of high temperature, and a thin layer of lithium niobate film is peeled off from the SiO2 layer;

[0022] Step 5: After the lithium niobate film on the SiO2 layer is stripped, the surface of the SiO2 layer is polished using a CMP chemical mechanical polishing process to make the surface of the SiO2 layer smooth; after polishing, a layer of photoresist is spin-coated on the surface of the lithium niobate film, and the photoresist is soft-baked; after baking, the photoresist is exposed using ultraviolet light and a mask; after exposure, the photoresist is developed, hardened and cleaned to form one or more trenches on the photoresist; the width of the trench is 0.4 to 2 μm, and the spacing between the trenches is at least 200 nm; then the lithium niobate film is transferred to a chamber in an ion implanter, and ions are implanted into the trenches of the photoresist to form an ion implantation layer, and the implanted ions are rare earth ions, the implantation energy of the rare earth ions is 0.1 to 100 MeV, and the implantation dose is 0.5×10 15 cm -2 ~1×10 20 cm -2 ; After the ion implantation is completed, the photoresist on the surface of the lithium niobate film is cleaned and removed;

[0023] Step 6: After the photoresist is removed, the lithium niobate optical waveguide is etched; first, a negative tone electron beam resist is used to select an area, and then the pattern on the mask is transferred to the ion implantation layer of the lithium niobate film by reactive ion etching to form a lithium niobate optical waveguide 100, wherein the lithium niobate optical waveguide 100 includes a lithium niobate optical waveguide input end 101, a first tapered transition waveguide 102, a lithium niobate optical waveguide transmission section 103, and a second tapered transition waveguide 104 connected in sequence. A transition optical waveguide 104 and a lithium niobate optical waveguide output end 105 are formed, and the etching depth of the lithium niobate optical waveguide is 200-900 nm; forward and backward grating etching is performed on the lithium niobate optical waveguide to form a forward grating and a backward grating; a lithium niobate optical waveguide is correspondingly etched out of each rare earth ion ion implantation layer, and multiple lithium niobate optical waveguides are etched to form a lithium niobate optical waveguide array, and the preparation of the lithium niobate optical waveguide array on the insulator is completed.

[0024] It should be noted that, in step 5, ions are implanted into the channels of the photoresist, and the ions implanted into each channel are the same ions or different ions. In step 6, the ions in the reaction ions are one or more of argon ions, oxygen ions, and nitrogen ions; the forward grating and the backward grating are etched using femtosecond pulse lasers. The height of the light beam output by the DFB laser and the height of the input end of the lithium niobate optical waveguide can be fine-tuned by the thickness of the deposited p-side metal electrode and the n-side metal electrode. For rare earth ion doping of lithium niobate film, either ion implantation technology or thermal diffusion technology can be used; the rare earth ions injected into the lithium niobate optical waveguide can be the same or different. The pattern refers to the pattern used to etch the lithium niobate optical waveguide.

[0025] In step 6, the widths of the lithium niobate optical waveguide input end and the lithium niobate optical waveguide output end are both 0.2 to 10 μm, the lengths of the first tapered transition waveguide and the second tapered transition waveguide are both greater than 10 μm, and the width of the lithium niobate optical waveguide transmission section is set to 400 to 900 nm; the lengths of the lithium niobate optical waveguide input end and the lithium niobate optical waveguide output end, the widths of the first tapered transition waveguide and the second tapered transition waveguide, and the length of the lithium niobate optical waveguide transmission section are all set as needed.

[0026] Rare earth ions refer to 17 elements in the IIIB group of the periodic table, including scandium (Sc) with atomic numbers 21, yttrium (Y) with atomic numbers 39, lanthanum (La) with atomic numbers 57, and lutetium (Lu) with atomic numbers 71. Among them, lanthanide elements include lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

[0027] Furthermore, the bonding method in step 3 is plasma activation bonding, and the plasma source of the plasma activation bonding is one or more of argon ions, oxygen ions, and nitrogen ions.

[0028] Furthermore, after the lithium niobate optical waveguide array is prepared in step 6, a SiO2 insulating layer is deposited on the surface of the lithium niobate optical waveguide to protect the lithium niobate optical waveguide; the thickness of the SiO2 insulating layer is 0.1μm to 10μm; the DFB laser is close to the input end of the lithium niobate optical waveguide to inject the laser into the input end of the lithium niobate optical waveguide.

[0029] It should be noted that the laser light emitted by the DFB laser can excite the rare earth ions between the forward grating and the backward grating to undergo energy level transition and generate photons after passing through the forward grating.

[0030] The gallium arsenide substrate may also be a silicon substrate, a gallium nitride substrate, a diamond substrate, an indium phosphide substrate or other substrates.

[0031] A laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device comprises a DFB laser array, a lithium niobate optical waveguide array on an insulator and a gallium arsenide substrate. The DFB laser array and the lithium niobate optical waveguide array on an insulator are respectively placed on the gallium arsenide substrate, and the DFB laser is bonded to the gallium arsenide substrate by using a wafer bonding technology to ensure that the output light of the DFB laser is highly matched with the lithium niobate optical waveguide; each lithium niobate optical waveguide is pumped by a DFB laser, and the laser output by the DFB laser is coupled into the lithium niobate optical waveguide through optical mode matching; the lasers emitted by the DFB laser array are respectively coupled into the corresponding lithium niobate optical waveguide array, and the laser can induce energy level transition of rare earth ions, thereby emitting light of corresponding wavelengths, and the light of corresponding wavelengths oscillates back and forth between a forward grating and a backward grating. When the light reaches a certain intensity, the laser is output from the backward grating, and finally a multi-wavelength hybrid output is realized.

[0032] A method for preparing a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device, including a method for preparing a DFB laser array and a method for preparing a lithium niobate optical waveguide array on an insulator, specifically as follows:

[0033] Step 1: Prepare a lithium niobate on insulator optical waveguide array using a gallium arsenide substrate;

[0034] Step 2: Prepare a DFB laser array;

[0035] Step 3: Bond the DFB laser array to the GaAs substrate, ensuring that the output light of the DFB laser array is highly matched to the lithium niobate waveguide on the lithium niobate waveguide on insulator array.

[0036] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0037] The present invention adopts ion implantation technology to implant ions into the channel of the photoresist, and wafer bonding technology to integrate the gallium arsenide substrate and the SiO2 layer to manufacture a photonic device; the photonic device integrates multiple DFB lasers and multiple rare earth ion-implanted lithium niobate optical waveguides, and realizes coupling of the laser output by the DFB laser into the lithium niobate optical waveguide; a layer of SiO2 insulating layer is deposited on the surface of the lithium niobate optical waveguide to prevent light leakage; the wafer bonding technology is used to realize the integration of the DFB laser onto the gallium arsenide substrate, and then the output laser pumps the rare earth ions in the lithium niobate material to realize energy level transition, realize the mixed output of multiple wavelengths of light and the multi-mode dynamic anti-counterfeiting effect, and meet the application requirements. At the same time, the photonic device has a compact structure and high integration, and can be widely used in the integration of large-scale photonic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The drawings are only used for illustrative purposes and are not to be construed as limitations of the present invention. To better illustrate the present embodiment, some parts of the drawings may be omitted, enlarged, or reduced, and do not represent the size of actual products. For those skilled in the art, it is understandable that some well-known structures and their descriptions may be omitted in the drawings.

[0039] Figure 1 This is a schematic diagram of a lithium niobate single crystal wafer;

[0040] Figure 2 A schematic diagram of depositing a SiO2 layer on the lithium niobate single crystal wafer;

[0041] Figure 3 A schematic diagram of forming a damage layer by ion implantation into a lithium niobate single crystal;

[0042] Figure 4 Schematic diagram of the CMP chemical mechanical polishing process for the SiO2 layer on the lithium niobate single crystal;

[0043] Figure 5 To provide a schematic diagram of a gallium arsenide substrate;

[0044] Figure 6 Schematic diagram of bonding a lithium niobate single crystal wafer to a gallium arsenide substrate;

[0045] Figure 7 Schematic diagram of retaining lithium niobate film on SiO2 layer after annealing process;

[0046] Figure 8 It is a side view of forming a base film on the SiO2 layer, spin coating photoresist, and soft baking;

[0047] Fig. 9 A schematic diagram of masking and UV exposure of photoresist;

[0048] Fig.10 The schematic diagram of developing and hardening the photoresist is shown in FIG.

[0049] Fig.11 Schematic diagram of rare earth ion implantation into lithium niobate film;

[0050] Fig.12 A top view of rare earth ion implantation into lithium niobate film;

[0051] Fig.13 A side view of a lithium niobate optical waveguide etched into lithium niobate;

[0052] Fig.14 Schematic diagram of preparing lithium niobate optical waveguide in lithium niobate thin film area;

[0053] Fig.15 Schematic diagram of integrating DFB laser on GaAs substrate;

[0054] Fig.16 This is a schematic diagram of the structure of the photonic device in Example 3;

[0055] Explanation of the reference numerals: 1. lithium niobate single crystal; 2. SiO2 layer; 3. damaged layer; 4. gallium arsenide substrate; 5. photoresist; 6. mask; 7. ultraviolet light; 8. ion implantation layer; 9. forward grating; 10. backward grating; 11. p-side metal electrode; 12. n-side metal electrode; 13. DFB laser; 14. pattern. DETAILED DESCRIPTION

[0056] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0057] Example 1

[0058] For easier understanding, see Figure 1-Figure 16 The present embodiment provides a DFB laser array, including a plurality of DFB lasers 13, wherein the DFB lasers 13 include an n-type GaAs cap layer, an n-type Al x Ga 1-x As transition layer, n-type Al x Ga 1-x As confinement layer, n-type Al x Ga 1-x As waveguide layer, quantum well active region, p-type Al x Ga 1-xAs waveguide layer, p-type Al x Ga 1-x As confinement layer, p-type Al x Ga 1-x As transition layer, p-type GaAs cap layer, a p-side metal electrode 11 and an n-side metal electrode 12 are arranged on the DFB laser 13, and the p-side metal electrode 11 and the n-side metal electrode 12 are used to provide electrical connection for the DFB laser 13.

[0059] A lithium niobate optical waveguide array on insulator includes a lithium niobate optical waveguide array and a SiO2 layer 2, wherein the lithium niobate optical waveguide array includes a plurality of lithium niobate optical waveguides 100, wherein the lithium niobate optical waveguides 100 are wrapped by a SiO2 layer, and a SiO2 insulating layer is deposited on the lithium niobate optical waveguide 100 to protect the lithium niobate optical waveguide 100; the lithium niobate optical waveguide 100 includes a lithium niobate optical waveguide input end 101, a first tapered transition waveguide 102, a lithium niobate optical waveguide transmission section 103, a second tapered transition optical waveguide 104, and a lithium niobate optical waveguide output end 105 which are connected in sequence, and a DFB laser 13 is close to the lithium niobate optical waveguide input end 101 for injecting laser into the lithium niobate optical waveguide input end 101.

[0060] The lithium niobate optical waveguide transmission section 103 is provided with a grating, and the grating includes a forward grating 9 and a backward grating 10 . The forward grating 9 is located close to the first tapered transition waveguide 102 , and the backward grating 10 is located close to the second tapered transition optical waveguide 104 .

[0061] It should be noted that the period of the grating in the DFB laser 13 and the depth of the grating etching are selected according to the specific situation. The number and spacing of the forward grating 9 and the backward grating 10 in the lithium niobate optical waveguide 100 are calculated based on the optical coupling mode theory. The lithium niobate optical waveguide 100 is a ridge optical waveguide, and the laser output by the DFB laser 13 is used to pump the rare earth ions doped in the lithium niobate optical waveguide 100 to perform energy level transition to achieve light emission.

[0062] A laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device comprises a DFB laser array, a lithium niobate optical waveguide array on an insulator and a gallium arsenide substrate 4. The DFB laser array and the lithium niobate optical waveguide array on an insulator are respectively placed on the gallium arsenide substrate 4. The DFB laser array is bonded to the gallium arsenide substrate 4 by using a wafer bonding technology to ensure that the output light of the DFB laser array matches the lithium niobate optical waveguide array in height. Each lithium niobate optical waveguide 100 is pumped by a DFB laser 13, and the laser output by the DFB laser 13 is coupled into the lithium niobate optical waveguide 100. The lasers emitted by the DFB laser array are respectively coupled into the corresponding lithium niobate optical waveguide array, and the lasers can induce energy level transitions of rare earth ions, thereby emitting light of corresponding wavelengths. The light of corresponding wavelengths oscillates back and forth between a forward grating 9 and a backward grating 10. When the light reaches a certain intensity, the laser is output from the backward grating 10, and finally a multi-wavelength hybrid output is achieved.

[0063] In order to increase the luminescence mode in the same matrix material, obtain a multi-mode dynamic anti-counterfeiting effect, and realize a high-level luminescence anti-counterfeiting strategy, the present invention selects lithium niobate as the matrix of the rare earth luminescent material; through ion implantation and spin coating photoresist technology, different rare earth ions are injected into different parts of the lithium niobate single crystal 1; using wafer bonding technology, the DFB laser 13 is integrated into the gallium arsenide substrate 4, and then the rare earth ions in the lithium niobate material are output laser pumped to realize energy level transition, thereby realizing mixed output of multiple wavelengths.

[0064] The photonic device of the present invention integrates multiple DFB lasers 13 and lithium niobate optical waveguides 100, can achieve light output in multiple bands, and can achieve multi-mode dynamic anti-counterfeiting effects; at the same time, the photonic device of the present invention has a compact structure and high integration, and can be widely used in the integration of large-scale photonic devices. It can increase the light-emitting mode in the same matrix material to obtain a multi-mode dynamic anti-counterfeiting effect, realize multi-color conversion light emission in the same matrix, and realize a high-level light-emitting anti-counterfeiting strategy.

[0065] Example 2

[0066] Specifically, based on Example 1, the scheme is described in combination with specific implementation examples to further reflect the technical effects of the scheme. Specifically:

[0067] When the ions injected into the lithium niobate optical waveguide 100 are the same, the method for preparing the photonic device includes the following steps:

[0068] Step 1: providing a lithium niobate single crystal wafer 1, and depositing a SiO2 layer 2 with a thickness of 2 μm on the lithium niobate single crystal wafer 1 by using a PECVD plasma enhanced chemical vapor deposition method;

[0069] Step 2: After the deposition of SiO2 layer 2, H and He ions are implanted into the lithium niobate single crystal using high energy ion implantation technology; the implantation energy of He ions is 300 keV and the implantation dose is 1×10 17 cm -2 The H ion injection energy is 160 keV and the injection dose is 1×10 17 cm -2 , forming a damaged layer 3 formed by ion implantation; after the ion implantation is completed, the damaged layer 3 and the SiO2 layer 2 are subjected to CMP chemical mechanical polishing to reduce the surface roughness of the lithium niobate single crystal 1 to less than 1 nm;

[0070] Step 3: Provide a gallium arsenide substrate 4, and bond the polished SiO2 layer 2 to the gallium arsenide substrate 4; activate the surfaces of the gallium arsenide substrate 4 and the SiO2 layer 2. After activation, transfer the two wafers consisting of the gallium arsenide substrate 4 and the SiO2 layer 2 to the chamber of the wafer bonding machine for wafer bonding to form a whole; reduce the pressure in the chamber to 1×10 -5 Pa, the applied bonding force is 10 kN, and the bonding time is 1 min to form the synthesized wafer bonding pair;

[0071] Step 4: After the wafer bonding is completed, the synthesized wafer bonding pair is transferred to the annealing furnace; the temperature in the annealing furnace is slowly increased at a temperature rise rate of 2°C / min until the temperature in the furnace reaches 200°C; during the heating process, high-purity nitrogen is continuously introduced into the furnace at a nitrogen flow rate of 8L / h; when the annealing time reaches about 10h, the heating in the furnace is stopped; after the temperature in the chamber is naturally cooled to room temperature, the wafer bonding pair in the chamber is taken out; the damaged layer 3 in the lithium niobate single crystal 1 expands under the action of high temperature, and a thin layer of lithium niobate film is peeled off from the SiO2 layer 2;

[0072] Step 5: After the lithium niobate film on the SiO2 layer 2 is stripped, the surface is polished using a CMP process to make the surface smooth; after polishing, a layer of photoresist 5 is spin-coated on the surface of the lithium niobate film, and the photoresist 5 is soft-baked; the thickness of the photoresist 5 is 5μm; after baking, the photoresist 5 is exposed using ultraviolet light 7 and a mask 6; after exposure, the photoresist 5 is developed, hardened and cleaned, so that one or more grooves are formed on the photoresist 5; the width of the groove is 0.5μm, and the spacing between the grooves is 400nm; then the lithium niobate film is transferred to the chamber in the ion implanter, and the grooves of the photoresist 5 are ion-implanted, and the injected ions are rare earth ions Er 3+ ; The injection energy is 900keV and the injection dose is 1×10 16 cm -2 After the injection is completed, the photoresist 5 on the surface of the lithium niobate film is cleaned and removed;

[0073] Step 6: After the photoresist 5 is removed, the etching of the lithium niobate optical waveguide 100 is started; the width of the lithium optical waveguide transmission section 103 is set to 800nm ​​to ensure that the light can be transmitted in single mode; firstly, the area is selected using a negative tone electron beam resist, and then the pattern 14 is transferred to the ion implantation layer 8 of the thin film lithium niobate by reactive ion etching using argon ions, and the etching depth of the optical waveguide is 400nm; after the optical waveguide etching is completed, the lithium niobate optical waveguide 100 is grating etched forward and backward to form A forward grating 9 and a backward grating 10 are formed, and the forward grating 9 and the backward grating 10 are etched by femtosecond pulse laser; the number of etching pairs of the forward grating 9 is 250, and the number of etching pairs of the backward grating 10 is 10; each ion implantation layer 8 corresponds to an etching of a lithium niobate optical waveguide 100, thereby forming a lithium niobate optical waveguide array; after the lithium niobate optical waveguide 100 is prepared, a SiO2 insulating layer with a thickness of 2μm is deposited on the surface of the lithium niobate optical waveguide 100, and the preparation of the lithium niobate optical waveguide array on the insulator is completed.

[0074] Step 7: After the preparation of the lithium niobate optical waveguide array on the insulator is completed, the DFB laser 13 is prepared; MOCVD metal organic chemical vapor deposition is used to epitaxially grow the laser, and a 50 nm thick doping concentration of 1×10 18 cm -3 The n-type GaAs cap layer is 2 μm thick and has a doping concentration of 1×10 17 cm -3 n-type Al x Ga 1-x As transition layer, 3 μm thick, doping concentration is 1×10 17 cm -3 n-type Al x Ga 1-x As confinement layer, 1μm thick n-type Al x Ga 1-x As waveguide layer, 20nm thick quantum well active region, 1μm thick p-type Al x Ga 1-x As waveguide layer, 3 μm thick with a doping concentration of 1×10 17 cm -3 p-type Al x Ga 1-x As confinement layer, 2 μm thick with a doping concentration of 1×10 17 cm -3 p-type Al x Ga 1-x As transition layer, 50nm thick, doping concentration is 1×10 18 cm -3After the epitaxial growth is completed, the Bragg grating is etched; the grating period is 1.72μm and the longitudinal mode interval is 11nm; a high reflection film and an anti-reflection film are respectively evaporated on the reflection end face and the emission end face of the DFB laser 13 to obtain a DFB laser 13, and multiple DFB lasers 13 constitute a DFB laser array; the material of the high reflection film is Ta2O5, and the material of the anti-reflection film is CeF3;

[0075] Step 8: After the DFB laser 13 is prepared, the DFB laser 13 is bonded to the gallium arsenide substrate 4 using wafer bonding technology to ensure that the output light height of the DFB laser 13 matches the lithium niobate optical waveguide 100; the matching of the output light height can be fine-tuned by the thickness of the metal electrode deposition; each lithium niobate optical waveguide 100 is pumped by a DFB laser 13, and then a DFB laser array is formed on the gallium arsenide substrate 4, and the gallium arsenide substrate 4, the lithium niobate optical waveguide array on the insulator and the DFB laser array constitute a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device.

[0076] Example 3

[0077] Specifically, based on Example 1, the scheme is described in combination with specific implementation examples to further reflect the technical effects of the scheme. Specifically:

[0078] like Fig.16 As shown, when the rare earth ion implanted elements in each lithium niobate optical waveguide 100 in the lithium niobate optical waveguide array are different, the method for preparing a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device includes the following steps:

[0079] Step 1: providing a lithium niobate single crystal wafer 1, and depositing a SiO2 layer 2 with a thickness of 3 μm on the lithium niobate single crystal wafer 1 by using a PECVD plasma enhanced chemical vapor deposition method;

[0080] Step 2: After the SiO2 layer 2 is deposited, H and He ions are implanted into the lithium niobate single crystal using high energy ion implantation technology; the implantation energy of He ions is 300 keV and the implantation dose is 1×10 17 cm -2 The H ion injection energy is 160 keV and the injection dose is 1×10 17 cm -2 , forming a damaged layer 3 formed by ion implantation; after the ion implantation is completed, the damaged layer 3 and the SiO2 layer 2 are subjected to CMP chemical mechanical polishing to reduce the surface roughness of the lithium niobate single crystal 1 to less than 1 nm;

[0081] Step 3: Provide a gallium arsenide substrate 4, and bond the polished SiO2 layer 2 to the gallium arsenide substrate 4; activate the surfaces of the gallium arsenide substrate 4 and the SiO2 layer 2. After activation, transfer the two wafers consisting of the gallium arsenide substrate 4 and the SiO2 layer 2 to the chamber of the wafer bonding machine for wafer bonding to form a whole; reduce the pressure in the chamber to 1×10 -5 Pa, the applied bonding force is 10 kN, and the bonding time is 1 min to form the synthesized wafer bonding pair;

[0082] Step 4: After the wafer bonding is completed, the synthesized wafer bonding pair is transferred to the annealing furnace; the temperature in the annealing furnace is slowly increased at a temperature rise rate of 2°C / min until the temperature in the furnace reaches 300°C; during the heating process, high-purity nitrogen is continuously introduced into the furnace at a nitrogen flow rate of 8L / h; when the annealing time reaches about 10h, the heating in the furnace is stopped; after the temperature in the chamber is naturally cooled to room temperature, the wafer bonding pair in the chamber is taken out; the damaged layer 3 in the lithium niobate single crystal 1 expands under the action of high temperature, and a thin layer of lithium niobate film is peeled off from the SiO2 layer 2;

[0083] Step 5: After the lithium niobate film on the SiO2 layer 2 is stripped, the surface is polished using a CMP process to make the surface smooth; after polishing, a layer of photoresist 5 is spin-coated on the surface of the lithium niobate film, and the photoresist 5 is soft-baked; the thickness of the photoresist 5 is 5 μm; after baking, the photoresist 5 is exposed using ultraviolet light 7 and a mask 6; after exposure, the photoresist 5 is developed, hardened and cleaned, thereby forming a channel on the photoresist 5, and the width of the channel is 0.5 μm; then the lithium niobate film is transferred to the chamber in the ion implanter, and ions are implanted into the channel of the photoresist 5, and the implanted ions are rare earth ions Er 3+ ; The injection energy is 900keV and the injection dose is 1×10 16 cm -2 After the injection is completed, the photoresist 5 on the surface of the lithium niobate film is cleaned and removed; then the above steps are repeated to form a second channel 500nm away from the first channel; the second rare earth ion Tm is injected into the channel 3+ , the implantation energy is 1 MeV, and the implantation dose is 1×10 16 cm -2 ;

[0084] Step 6: After the photoresist 5 is removed, the etching of the lithium niobate optical waveguide 100 is started; the width of the lithium optical waveguide transmission section 103 is set to 800nm ​​to ensure that the light can be transmitted in single mode; first, the area is selected using a negative tone electron beam resist, and then the pattern 14 is transferred to the ion implantation layer 8 of the thin film lithium niobate by reactive ion etching using argon ions, and the etching depth of the optical waveguide is 400nm; after the optical waveguide etching is completed, forward and backward grating etching is performed on the lithium optical waveguide transmission section 103 to form A forward grating 9 and a backward grating 10 are formed, and the forward grating 9 and the backward grating 10 are etched by femtosecond pulse laser; the number of etching pairs of the forward grating 9 is 250, and the number of etching pairs of the backward grating 10 is 10; each ion implantation layer 8 corresponds to an etching of a lithium niobate optical waveguide 100, thereby forming a lithium niobate optical waveguide array; after the lithium niobate optical waveguide 100 is prepared, a SiO2 insulating layer with a thickness of 2μm is deposited on the surface of the lithium niobate optical waveguide 100, and the preparation of the lithium niobate optical waveguide array on the insulator is completed.

[0085] Step 7: After the preparation of the lithium niobate optical waveguide array on the insulator is completed, the DFB laser 13 is prepared; MOCVD metal organic chemical vapor deposition is used to epitaxially grow the laser, and a 50 nm thick doping concentration of 1×10 18 cm -3 The n-type GaAs cap layer is 2 μm thick and has a doping concentration of 1×10 17 cm -3 n-type Al x Ga 1-x As transition layer, 3 μm thick, doping concentration is 1×10 17 cm -3 n-type Al x Ga 1-x As confinement layer, 1μm thick n-type Al x Ga 1-x As waveguide layer, 20nm thick quantum well active region, 1μm thick p-type Al x Ga 1-x As waveguide layer, 3 μm thick with a doping concentration of 1×10 17 cm -3 p-type Al x Ga 1-x As confinement layer, 2 μm thick with a doping concentration of 1×10 17 cm -3 p-type Al x Ga 1-x As transition layer, 50nm thick, doping concentration is 1×10 18 cm -3After the epitaxial growth is completed, the Bragg grating is etched; the grating period is 1.72μm and the longitudinal mode interval is 11nm; a high reflection film and an anti-reflection film are respectively evaporated on the reflection end face and the emission end face of the DFB laser 13 to obtain a DFB laser 13, and multiple DFB lasers 13 constitute a DFB laser array; the material of the high reflection film is Ta2O5, and the material of the anti-reflection film is CeF3;

[0086] Step 8: After the DFB laser 13 is prepared, the DFB laser 13 is bonded to the gallium arsenide substrate 4 using wafer bonding technology to ensure that the output light height of the DFB laser 13 matches the lithium niobate optical waveguide 100; the matching of the output light height can be fine-tuned by the thickness of the metal electrode deposition; each lithium niobate optical waveguide 100 is pumped by a DFB laser 13, and then a DFB laser array is formed on the gallium arsenide substrate 4, and the gallium arsenide substrate 4, the lithium niobate optical waveguide array on the insulator and the DFB laser array constitute a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device.

[0087] Example 4

[0088] Specifically, based on Example 1, the scheme is described in combination with specific implementation examples to further reflect the technical effects of the scheme. Specifically:

[0089] When the gallium arsenide substrate 4 is replaced with a diamond substrate as an integrated platform, the heat dissipation efficiency of the photonic device can be greatly increased. The preparation method of the laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device includes the following steps:

[0090] Step 1: providing a lithium niobate single crystal wafer 1, and depositing a SiO2 layer 2 with a thickness of 2 μm on the lithium niobate single crystal wafer 1 by using a PECVD plasma enhanced chemical vapor deposition method;

[0091] Step 2: After the SiO2 layer 2 is deposited, H and He ions are implanted into the lithium niobate single crystal using high energy ion implantation technology; the implantation energy of He ions is 300 keV and the implantation dose is 1×10 17 cm -2 The H ion injection energy is 160 keV and the injection dose is 1×10 17 cm -2 , forming a damaged layer 3 formed by ion implantation; after the ion implantation is completed, the damaged layer 3 and the SiO2 layer 2 are subjected to CMP chemical mechanical polishing to reduce the surface roughness of the lithium niobate single crystal 1 to less than 1 nm;

[0092] Step 3: Provide a diamond single crystal substrate, and bond the polished SiO2 layer 2 to the diamond single crystal wafer; select plasma activation bonding as the bonding method, and select argon ions as the plasma source to activate the diamond and SiO2 layer 2 surfaces; after activation, the two wafers consisting of the GaO substrate 4 and the SiO2 layer 2 are transferred to the chamber of the wafer bonding machine for wafer bonding and combined into one; reduce the pressure in the chamber to 1×10 -5 Pa, the applied bonding force is 5kN, the bonding time is 60min, and a synthesized wafer bonding pair is formed; Step 4: After the wafer bonding is completed, the synthesized wafer bonding pair is transferred to the annealing furnace; the temperature in the annealing furnace is slowly increased at a temperature rise rate of 2℃ / min until the temperature in the furnace rises to 200℃; during the heating process, high-purity nitrogen is continuously introduced into the furnace at a nitrogen flow rate of 8L / h; when the annealing time reaches about 10h, the heating in the furnace is stopped; after the temperature in the chamber is naturally cooled to room temperature, the wafer bonding pair in the chamber is taken out; the damaged layer 3 in the lithium niobate single crystal 1 expands under the action of high temperature, and a thin layer of lithium niobate film is peeled off from the SiO2 layer 2;

[0093] Step 5: After the lithium niobate film on the SiO2 layer 2 is stripped, the surface is polished using a CMP process to make the surface smooth; after polishing, a layer of photoresist 5 is spin-coated on the surface of the lithium niobate film, and the photoresist 5 is soft-baked; the thickness of the photoresist 5 is 5μm; after baking, the photoresist 5 is exposed using ultraviolet light 7 and a mask 6; after exposure, the photoresist 5 is developed, hardened and cleaned, so that one or more grooves are formed on the photoresist 5; the width of the groove is 0.5μm, and the spacing between the grooves is 400nm; then the lithium niobate film is transferred to the chamber in the ion implanter, and the grooves of the photoresist 5 are ion-implanted, and the injected ions are rare earth ions Er 3+ ; The injection energy is 900keV and the injection dose is 1×10 16 cm -2 After the injection is completed, the photoresist 5 on the surface of the lithium niobate film is cleaned and removed;

[0094] Step 6: After the photoresist 5 is removed, the etching of the lithium niobate optical waveguide 100 is started; the width of the lithium optical waveguide transmission section 103 is set to 800nm ​​to ensure that the light can be transmitted in single mode; first, the area is selected using a negative tone electron beam resist, and then the pattern 14 is transferred to the ion implantation layer 8 of the thin film lithium niobate by reactive ion etching using argon ions, and the etching depth of the optical waveguide is 400nm; after the optical waveguide etching is completed, forward and backward grating etching is performed on the lithium optical waveguide transmission section 103 to form A forward grating 9 and a backward grating 10 are formed, and the forward grating 9 and the backward grating 10 are etched by femtosecond pulse laser; the number of etching pairs of the forward grating 9 is 250, and the number of etching pairs of the backward grating 10 is 10; each ion implantation layer 8 corresponds to an etching of a lithium niobate optical waveguide 100, thereby forming a lithium niobate optical waveguide array; after the lithium niobate optical waveguide 100 is prepared, a SiO2 insulating layer with a thickness of 2μm is deposited on the surface of the lithium niobate optical waveguide 100, and the preparation of the lithium niobate optical waveguide array on the insulator is completed.

[0095] Step 7: After the preparation of the lithium niobate optical waveguide array on the insulator is completed, the DFB laser 13 is prepared; MOCVD metal organic chemical vapor deposition is used to epitaxially grow the laser, and a 50 nm thick doping concentration of 1×10 18 cm -3 The n-type GaAs cap layer is 2 μm thick and has a doping concentration of 1×10 17 cm -3 n-type Al x Ga 1-x As transition layer, 3 μm thick, doping concentration is 1×10 17 cm -3 n-type Al x Ga 1-x As confinement layer, 1μm thick n-type Al x Ga 1-x As waveguide layer, 20nm thick quantum well active region, 1μm thick p-type Al x Ga 1-x As waveguide layer, 3 μm thick with a doping concentration of 1×10 17 cm -3 p-type Al x Ga 1-x As confinement layer, 2 μm thick with a doping concentration of 1×10 17 cm -3 p-type Al x Ga 1-x As transition layer, 50nm thick, doping concentration is 1×10 18 cm -3After the epitaxial growth is completed, the Bragg grating is etched; the grating period is 1.72μm and the longitudinal mode interval is 11nm; a high reflection film and an anti-reflection film are respectively evaporated on the reflection end face and the emission end face of the DFB laser 13 to obtain a DFB laser 13, and multiple DFB lasers 13 constitute a DFB laser array; the material of the high reflection film is Ta2O5, and the material of the anti-reflection film is CeF3;

[0096] Step 8: After the DFB laser 13 is prepared, the DFB laser 13 is bonded to the gallium arsenide substrate 4 using wafer bonding technology to ensure that the output light height of the DFB laser 13 matches the lithium niobate optical waveguide 100; the matching of the output light height can be fine-tuned by the thickness of the metal electrode deposition; each lithium niobate optical waveguide 100 is pumped by a DFB laser 13, and then a DFB laser array is formed on the gallium arsenide substrate 4, and the gallium arsenide substrate 4, the lithium niobate optical waveguide array on the insulator and the DFB laser array constitute a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device.

[0097] Example 5

[0098] Specifically, based on Example 1, the scheme is described in combination with specific implementation examples to further reflect the technical effects of the scheme. Specifically:

[0099] When the DFB laser 13 is replaced with an InP substrate DFB laser and other rare earth ions can be pumped, the photonic device preparation method includes the following steps:

[0100] Step 1: providing a lithium niobate single crystal wafer 1, and depositing a SiO2 layer 2 with a thickness of 2 μm on the lithium niobate single crystal wafer 1 by using a PECVD plasma enhanced chemical vapor deposition method;

[0101] Step 2: After the SiO2 layer 2 is deposited, H and He ions are implanted into the lithium niobate single crystal using high energy ion implantation technology; the implantation energy of He ions is 300 keV and the implantation dose is 1×10 17 cm -2 The H ion injection energy is 160 keV and the injection dose is 1×10 17 cm -2 , forming a damaged layer 3 formed by ion implantation; after the ion implantation is completed, the damaged layer 3 and the SiO2 layer 2 are subjected to CMP chemical mechanical polishing to reduce the surface roughness of the lithium niobate single crystal 1 to less than 1 nm;

[0102] Step 3: Provide an indium phosphide single crystal substrate, and bond the polished SiO2 layer 2 to the indium phosphide wafer; select plasma activation bonding as the bonding method, and select argon ions as the plasma source to activate the surface of indium phosphide and SiO2 layer 2; after activation, the two wafers consisting of the gallium phosphide substrate 4 and the SiO2 layer 2 are transferred to the chamber of the wafer bonding machine for wafer bonding and combined into one; reduce the pressure in the chamber to 1×10 -5 Pa, the applied bonding force is 10 kN, and the bonding time is 1 min to form the synthesized wafer bonding pair;

[0103] Step 4: After the wafer bonding is completed, the synthesized wafer bonding pair is transferred to the annealing furnace; the temperature in the annealing furnace is slowly increased at a temperature rise rate of 2°C / min until the temperature in the furnace reaches 200°C; during the heating process, high-purity nitrogen is continuously introduced into the furnace at a nitrogen flow rate of 8L / h; when the annealing time reaches about 10h, the heating in the furnace is stopped; after the temperature in the chamber is naturally cooled to room temperature, the wafer bonding pair in the chamber is taken out; the damaged layer 3 in the lithium niobate single crystal 1 expands under the action of high temperature, and a thin layer of lithium niobate film is peeled off from the SiO2 layer 2;

[0104] Step 5: After the lithium niobate film on the SiO2 layer 2 is stripped, the surface is polished using a CMP process to make the surface smooth; after polishing, a layer of photoresist 5 is spin-coated on the surface of the lithium niobate film, and the photoresist 5 is soft-baked; the thickness of the photoresist 5 is 5μm; after baking, the photoresist 5 is exposed using ultraviolet light 7 and a mask 6; after exposure, the photoresist 5 is developed, hardened and cleaned, so that one or more grooves are formed on the photoresist 5; the width of the groove is 0.5μm, and the spacing between the grooves is 400nm; then the lithium niobate film is transferred to the chamber in the ion implanter, and the grooves of the photoresist 5 are ion implanted, and the implanted ions are rare earth ions Pr 3+ ; The injection energy is 900keV and the injection dose is 1×10 16 cm -2 After the injection is completed, the photoresist 5 on the surface of the lithium niobate film is cleaned and removed;

[0105] Step 6: After the photoresist 5 is removed, the etching of the lithium niobate optical waveguide 100 is started; the width of the lithium optical waveguide transmission section 103 is set to 800nm ​​to ensure that the light can be transmitted in single mode; first, the area is selected using a negative tone electron beam resist, and then the pattern 14 is transferred to the ion implantation layer 8 of the thin film lithium niobate by reactive ion etching using argon ions, and the etching depth of the optical waveguide is 400nm; after the optical waveguide etching is completed, forward and backward grating etching is performed on the lithium optical waveguide transmission section 103 to form A forward grating 9 and a backward grating 10 are formed, and the forward grating 9 and the backward grating 10 are etched by femtosecond pulse laser; the number of etching pairs of the forward grating 9 is 250, and the number of etching pairs of the backward grating 10 is 10; each ion implantation layer 8 corresponds to an etching of a lithium niobate optical waveguide 100, thereby forming a lithium niobate optical waveguide array; after the lithium niobate optical waveguide 100 is prepared, a SiO2 insulating layer with a thickness of 2μm is deposited on the surface of the lithium niobate optical waveguide 100, and the preparation of the lithium niobate optical waveguide array on the insulator is completed.

[0106] Step 7: After the preparation of the lithium niobate optical waveguide array on the insulator is completed, the DFB laser 13 is prepared; MOCVD metal organic chemical vapor deposition is used to epitaxially grow the laser, and a 50nm thick doping concentration of 1×10 18 cm -3 The n-type InP buffer layer is 2 μm thick and has a doping concentration of 1×10 17 cm -3 n-type AlIn 0.48 As 0.52 The transition layer is 3 μm thick and has a doping concentration of 1×10 17 cm -3 n-type Al 0.21 Ga 0.26 In 0.53 As confinement layer, 1μm thick n-type AlIn 0.48 As 0.52 Waveguide layer, 20nm thick quantum well active region, 1μm thick p-type AlIn 0.48 As 0.52 The waveguide layer, 3 μm thick, has a doping concentration of 1×10 17 cm -3 p-type Al 0.21 Ga 0.26 In 0.53 As confinement layer, 2 μm thick with a doping concentration of 1×10 17 cm -3 p-type AlIn 0.48 As 0.52 The transition layer is 50 nm thick and has a doping concentration of 1×10 18 cm-3 After the epitaxial growth is completed, the Bragg grating is etched; the grating period is 1.72μm and the longitudinal mode interval is 11nm; a high reflection film and an anti-reflection film are respectively evaporated on the reflection end face and the emission end face of the DFB laser 13 to obtain a DFB laser 13, and multiple DFB lasers 13 constitute a DFB laser array; the material of the high reflection film is Ta2O5, and the material of the anti-reflection film is CeF3;

[0107] Step 8: After the DFB laser 13 is prepared, the DFB laser 13 is bonded to the gallium arsenide substrate 4 using wafer bonding technology to ensure that the output light height of the DFB laser 13 matches the lithium niobate optical waveguide 100; the matching of the output light height can be fine-tuned by the thickness of the metal electrode deposition; each lithium niobate optical waveguide 100 is pumped by a DFB laser 13, and then a DFB laser array is formed on the gallium arsenide substrate 4, and the gallium arsenide substrate 4, the lithium niobate optical waveguide array on the insulator and the DFB laser array constitute a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device.

[0108] The laser wavelength emitted by the InP substrate DFB laser is longer.

[0109] It should be noted that "..." in the drawings means omission. A method for preparing a DFB laser in Example 2-5 is combined with a method for preparing a lithium niobate optical waveguide array on an insulator to form a method for preparing a photonic device.

[0110] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device, characterized in that: The invention comprises a gallium arsenide substrate (4), a DFB laser array and a lithium niobate optical waveguide array on an insulator; the lithium niobate optical waveguide array on an insulator comprises a lithium niobate optical waveguide array and a SiO2 layer (2); the lithium niobate optical waveguide array comprises a plurality of lithium niobate optical waveguides (100); the lithium niobate optical waveguide (100) is wrapped by the SiO2 layer (2); a layer of SiO2 insulating layer is deposited on the lithium niobate optical waveguide (100) to protect the lithium niobate optical waveguide (100); the lithium niobate optical waveguide (100) comprises a lithium niobate optical waveguide input end (101), a first tapered transition waveguide (102), a lithium niobate optical waveguide transmission section (103), a second tapered transition optical waveguide (104), and a lithium niobate optical waveguide output end (105) connected in sequence; the DFB laser array, the lithium niobate optical waveguide array on an insulator and a SiO2 layer (2); the lithium niobate optical waveguide array comprises a plurality of lithium niobate optical waveguides (100); the lithium niobate optical waveguide (100) is wrapped by the SiO2 layer (2); a layer of SiO2 insulating layer is deposited on the lithium niobate optical waveguide (100) to protect the lithium niobate optical waveguide (100); the lithium niobate optical waveguide (100) comprises a lithium niobate optical waveguide input end (101), a first tapered transition waveguide (102), a lithium niobate optical waveguide transmission section (103), a second tapered transition optical waveguide (104), and a lithium niobate optical waveguide output end (105) connected in sequence; The waveguide arrays are respectively placed on the gallium arsenide substrate (4), and the DFB laser arrays are bonded to the gallium arsenide substrate (4) using wafer bonding technology to ensure that the output light of the DFB laser array matches the lithium niobate optical waveguide array; each lithium niobate optical waveguide (100) is pumped by a DFB laser (13), and the laser light output by the DFB laser (13) is coupled into the lithium niobate optical waveguide (100); the laser light emitted by the DFB laser array is respectively coupled into the corresponding lithium niobate optical waveguide array, and the laser light can induce the rare earth ions to undergo energy level transitions, thereby emitting light of corresponding wavelengths, and the light of corresponding wavelengths oscillates back and forth between the forward grating (9) and the backward grating (10), and when the light reaches a certain intensity, the laser light is output from the backward grating (10), and finally a mixed output of multiple wavelengths is achieved.

2. The laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device according to claim 1, characterized in that: The DFB laser array comprises a plurality of DFB lasers (13), wherein the DFB lasers (13) comprise an n-type GaAs cap layer, an n-type Al x Ga 1-x As transition layer, n-type Al x Ga 1-x As confinement layer, n-type Al x Ga 1-x As waveguide layer, quantum well active region, p-type Al x Ga 1-x As waveguide layer, p-type Al x Ga 1-x As confinement layer, p-type Al x Ga 1-x As transition layer, p-type GaAs cap layer.

3. The laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device according to claim 2, characterized in that: The DFB laser (13) is provided with a p-side metal electrode (11) and an n-side metal electrode (12), and the p-side metal electrode (11) and the n-side metal electrode (12) are used to provide electrical connection for the DFB laser (13).

4. The laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device according to claim 1, characterized in that: The preparation method of the DFB laser array comprises the following steps: epitaxially growing the DFB laser (13) by using a MOCVD metal organic chemical vapor deposition method, and sequentially epitaxially growing an n-type GaAs cap layer, an n-type Al x Ga 1-x As transition layer, n-type Al x Ga 1-x As confinement layer, n-type Al x Ga 1-x As waveguide layer, quantum well active region, p-type Al x Ga 1-x As waveguide layer, p-type Al x Ga 1-x As confinement layer, p-type Al x Ga 1-x As transition layer, p-type GaAs cap layer; after epitaxial growth is completed, grating etching is performed on the DFB laser (13); a high reflection film and an anti-reflection film are respectively evaporated on the reflection end face and the emission end face of the DFB laser (13) to obtain the DFB laser (13), and a plurality of DFB lasers (13) constitute a DFB laser array.

5. The laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device according to claim 4, characterized in that: n-type GaAs cap layer, doping concentration is 1×10 17 ~ 5×10 19 cm -3 ; n-type Al x Ga 1-x As transition layer, doping concentration is 5×10 17 ~ 1×10 19 cm -3 ; n-type Al x Ga 1-x As confinement layer, doping concentration is 1×10 18 ~ 1×10 19 cm -3 ; n-type Al x Ga 1-x As waveguide layer, undoped; quantum well active region; p-type Al x Ga 1-x As waveguide layer, undoped; p-type Al x Ga 1-x As confinement layer, doping concentration is 1×10 18 ~ 1×10 19 cm -3 ; p-type Al x Ga 1-x As transition layer, doping concentration is 5×10 17 ~ 1×10 19 cm -3 ; p-type GaAs cap layer, doping concentration is 1×10 17 ~ 5×10 20 cm -3 ; The material of the high reflection film is one or more of Ta2O5, Si, and HfO2, and the material of the anti-reflection film is one or more of CeF3, MgF2, Al2O3, and ZrO2.

6. The laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device according to claim 1, characterized in that: A grating is provided in a lithium niobate optical waveguide transmission section (103) in the lithium niobate optical waveguide array on the insulator, the grating comprising a forward grating (9) and a backward grating (10), the forward grating (9) being located close to the first tapered transition waveguide (102), and the backward grating (10) being located close to the second tapered transition optical waveguide (104).

7. A method for preparing a lithium niobate optical waveguide array on an insulator in a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device according to any one of claims 1 and 6, characterized in that: The steps include: Step 1: depositing a SiO2 layer (2) on a lithium niobate single crystal wafer (1) using a PECVD plasma enhanced chemical vapor deposition method; Step 2: After depositing the SiO2 layer (2), the lithium niobate single crystal (1) is implanted with H and He ions using high-energy ion implantation technology to form a damaged layer (3) composed of ion implantation, wherein the energy of the ion implantation is 10-1000 keV and the implantation dose is 1×10 15 cm -2 ~1×10 20 cm -2 After the ion implantation is completed, the damaged layer (3) and the SiO2 layer (2) are subjected to CMP chemical mechanical polishing to reduce the surface roughness of the lithium niobate single crystal (1) to less than 1 nm; Step 3: providing a gallium arsenide substrate (4), bonding the polished SiO2 layer (2) to the gallium arsenide substrate (4); activating the surfaces of the gallium arsenide substrate (4) and the SiO2 layer (2); after the activation, transferring the two wafers consisting of the gallium arsenide substrate (4) and the SiO2 layer (2) into a chamber of a wafer bonding machine for wafer bonding to form a whole, and reducing the pressure in the chamber to 1×10 - 5 Pa or less, the bonding force is 1~100kN, and the bonding time is 1~60min to form a synthesized wafer bonding pair; Step 4: After the wafer bonding is completed, the synthesized wafer bonding pair is transferred to an annealing furnace; the temperature in the annealing furnace is slowly increased at a rate of 2°C / min until the temperature in the furnace rises to between 100 and 300°C; during the heating process, high-purity nitrogen is continuously introduced into the furnace at a flow rate of 3 to 10 L / h; when the annealing time reaches 10 hours, the heating in the furnace is stopped; after the temperature in the chamber is naturally cooled to room temperature, the wafer bonding pair in the chamber is taken out; the damaged layer (3) in the lithium niobate single crystal (1) expands under the action of high temperature, and a thin layer of lithium niobate film is peeled off from the SiO2 layer (2); Step 5: After the lithium niobate film on the SiO2 layer (2) is stripped off, the surface of the SiO2 layer (2) is polished using a CMP chemical mechanical polishing process to make the surface of the SiO2 layer (2) smooth; after polishing, a layer of photoresist (5) is spin-coated on the surface of the lithium niobate film, and the photoresist (5) is soft-baked; after baking, the photoresist (5) is exposed using ultraviolet light (7) and a mask (6); after exposure, the photoresist (5) is developed, hardened and cleaned, thereby forming one or more trenches on the photoresist (5); the width of the trench is 0.4~2μm, and the spacing between the trenches is at least 200nm; then the lithium niobate film is transferred to a chamber in an ion implanter, and ions are implanted into the trenches of the photoresist (5) to form an ion implantation layer (8), wherein the implanted ions are rare earth ions, the implantation energy of the rare earth ions is 0.1~100MeV, and the implantation dose is 0.5×10 15 cm -2 ~1×10 20 cm -2 After the ion implantation is completed, the photoresist (5) on the surface of the lithium niobate film is cleaned and removed; Step 6: After the photoresist (5) is removed, the lithium niobate optical waveguide (100) is etched; first, a region is selected using a negative tone electron beam resist, and then a pattern (14) on the mask (6) is transferred to the ion implantation layer (8) of the lithium niobate film by reactive ion etching to form a lithium niobate optical waveguide (100), wherein the lithium niobate optical waveguide (100) comprises a lithium niobate optical waveguide input end (101), a first tapered transition waveguide (102), a lithium niobate optical waveguide transmission section (103), a second tapered transition waveguide (104), and a lithium niobate optical waveguide (105). The lithium optical waveguide output end (105) and the lithium niobate optical waveguide (100) are etched to a depth of 200 to 900 nm. After the etching of the lithium niobate optical waveguide (100) is completed, the lithium niobate optical waveguide (100) is etched forward and backward to form a forward grating (9) and a backward grating (10). Each rare earth ion ion implantation layer (8) is etched to form a lithium niobate optical waveguide (100), and multiple lithium niobate optical waveguides (100) are etched to form a lithium niobate optical waveguide array. The preparation of the lithium niobate optical waveguide array on an insulator is completed.

8. The method for preparing a lithium niobate on insulator optical waveguide array according to claim 7, characterized in that: After the lithium niobate optical waveguide array is prepared in step 6, a SiO2 insulating layer is deposited on the surface of the lithium niobate optical waveguide (100) to protect the lithium niobate optical waveguide (100); the thickness of the SiO2 insulating layer is 0.1 μm to 10 μm; the DFB laser (13) is close to the input end (101) of the lithium niobate optical waveguide to emit laser into the input end (101) of the lithium niobate optical waveguide.

9. A method for preparing a laser-pumped lithium niobate optical waveguide multi-wavelength hybrid integrated photonic device, characterized in that: The method for preparing the DFB laser array according to claim 4 and the method for preparing the lithium niobate on insulator optical waveguide array according to any one of claims 7 to 8 are as follows: Step 1: Prepare a lithium niobate on insulator optical waveguide array; Step 2: Prepare a DFB laser array; Step 3: Bond the DFB laser array to the GaAs substrate (4), ensuring that the output light of the DFB laser array matches the lithium niobate optical waveguide on the lithium niobate optical waveguide array on the insulator.

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