Light emitting diode transfer device and method of manufacturing the same

Abstract

This application provides a light-emitting diode (LED) transfer device, including a substrate, a thermal barrier layer, a transfer substrate, and multiple transfer heads. The thermal barrier layer is located on one side of the substrate, and the transfer substrate is located on the side of the thermal barrier layer away from the substrate. The transfer heads penetrate the thermal barrier layer (i.e., the transfer substrate) and protrude from the surface of the transfer substrate away from the substrate. The transfer heads are used to adsorb LEDs. The thermal conductivity of the transfer heads is greater than that of the transfer substrate. In this application embodiment, the thermal conductivity of the transfer heads is greater than that of the transfer substrate, and the thermal barrier layer can block heat transfer to the transfer substrate but not to the transfer heads. Therefore, heat transferred from the substrate side is more easily and quickly transferred along the transfer heads. This makes it possible to maintain a higher temperature for the transfer heads while keeping the transfer substrate at a lower temperature. This helps reduce the problem of thermal expansion of the transfer substrate causing positional displacement of the transfer heads, thereby improving the alignment accuracy of the transfer heads.

Description

[Technical Field]

[0001] This application relates to the field of display technology, and in particular to a light-emitting diode transfer device and its fabrication method. [Background Technology]

[0002] Micro-LEDs possess characteristics such as high efficiency, high brightness, high reliability, and fast response time. They also exhibit self-emissive properties and offer advantages such as energy saving, simple structure, small size, and thinness, leading to their wide application in display technology. Unlike Organic Light-Emitting Diode (OLED) display panels, which are fabricated using film deposition, Micro-LED display panels primarily utilize transfer technology to realize the matrix arrangement of light-emitting elements.

[0003] In the fabrication process of Micro-LED display panels, a light-emitting diode transfer device is usually used to transfer Micro-LEDs onto the display substrate. However, the light-emitting diode transfer device used in the prior art has a misalignment problem when transferring Micro-LEDs onto the display substrate.

[0004] [Application Content]

[0005] In view of this, embodiments of this application provide a light-emitting diode transfer device and a method for fabricating the same, in order to solve the above-mentioned problems.

[0006] In a first aspect, embodiments of this application provide a light-emitting diode transfer device, including a substrate, a heat-blocking layer, a transfer substrate, and a plurality of transfer heads. The heat-blocking layer is located on one side of the substrate, and the transfer substrate is located on the side of the heat-blocking layer away from the substrate. The transfer heads penetrate the heat-blocking layer, i.e., the transfer substrate, and protrude from the surface of the transfer substrate away from the substrate. The transfer heads are used to adsorb light-emitting diodes. The thermal conductivity of the transfer heads is greater than that of the transfer substrate.

[0007] In one implementation of the first aspect, the transfer head comprises polydimethylsiloxane and graphene.

[0008] In one implementation of the first aspect, the transfer head is in contact with the substrate.

[0009] In one implementation of the first aspect, the heat-blocking layer includes a first heat-insulating layer, the thermal conductivity of which is less than that of the transfer substrate.

[0010] In one implementation of the first aspect, the first thermal insulation layer comprises a nanoporous silica material.

[0011] In one implementation of the first aspect, the first thermal insulation layer comprises a silicon carbide material.

[0012] In one implementation of the first aspect, the first insulation layer includes a water-repellent agent.

[0013] In one implementation of the first aspect, the heat-blocking layer further includes a second heat-insulating layer, which is stacked with the first heat-insulating layer, and the second heat-insulating layer is used to block heat radiation.

[0014] In one implementation of the first aspect, the second insulation layer comprises at least one of aluminum foil and molybdenum steel foil.

[0015] In one implementation of the first aspect, the coefficient of thermal expansion of the thermal barrier layer is less than that of the transfer substrate.

[0016] Secondly, embodiments of this application provide a method for fabricating a light-emitting diode (LED) transfer device, used to fabricate the LED transfer device as provided in the first aspect, the fabrication method comprising:

[0017] A substrate is provided, and a heat barrier layer and a transfer substrate are sequentially fabricated on one side of the substrate;

[0018] Photoresist is applied to the surface of the transfer substrate away from the substrate, and the photoresist is patterned.

[0019] Multiple first holes are formed by etching the transfer substrate and heat barrier layer according to the pattern of the photoresist;

[0020] The transfer head is prepared in the first hole, and then the photoresist is removed.

[0021] In this embodiment, the thermal conductivity of the transfer head is set to be greater than that of the transfer substrate. This makes it easier for heat transferred from the substrate side to be transferred along the transfer head, which can make the temperature rise of the transfer head greater than that of the transfer substrate. This makes it possible to ensure that the transfer head has a high temperature while the transfer substrate has a low temperature. This helps to reduce the problem of the transfer head shifting due to thermal expansion of the transfer substrate, and thus helps to improve the alignment accuracy of the transfer head.

[0022] Furthermore, by setting a thermal barrier layer between the substrate and the transfer substrate, and having the transfer head pass through both the transfer substrate and the thermal barrier layer, the thermal barrier layer can block heat transfer to the transfer substrate without blocking heat transfer to the transfer head. This is beneficial for achieving a higher temperature for the transfer head while maintaining a lower temperature for the transfer substrate. This helps to further reduce the problem of thermal expansion of the transfer substrate causing positional shift of the transfer head, thereby further improving the alignment accuracy of the transfer head. [Attached Image Description]

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of a light-emitting diode transfer device in the prior art;

[0025] Figure 2 For use Figure 1 The diagram shows a flowchart of a process for fabricating a miniature LED display panel using an LED transfer device.

[0026] Figure 3 This is a schematic diagram of a light-emitting diode transfer device provided in an embodiment of this application;

[0027] Figure 4 for Figure 3 The diagram shows an application of a light-emitting diode transfer device.

[0028] Figure 5 A schematic diagram of yet another light-emitting diode transfer device provided in the embodiments of this application;

[0029] Figure 6 This is a schematic diagram of the structure of a heat barrier layer related to this application;

[0030] Figure 7 This is a process flow diagram of the fabrication process of a light-emitting diode transfer device provided in an embodiment of this application.

Detailed Implementation Methods

[0031] To better understand the technical solution of this application, the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0032] It should be understood that the described embodiments are merely some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0033] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0034] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0035] In the description of this specification, it should be understood that the terms "substantially", "approximately", "about", "about", "generally", "largely" used in the claims and embodiments of this application refer to values ​​that can be generally agreed upon within a reasonable range of process operations or tolerances, rather than a precise value.

[0036] It should be understood that although the terms "first," "second," etc., may be used to describe insulation layers and the like in the embodiments of this application, these insulation layers and the like should not be limited to these terms. These terms are only used to distinguish insulation layers and the like from one another. For example, without departing from the scope of the embodiments of this application, a first insulation layer may also be referred to as a second insulation layer, and similarly, a second insulation layer may also be referred to as a first insulation layer.

[0037] Figure 1 This is a schematic diagram of a light-emitting diode transfer device in the prior art. Figure 2 For use Figure 1 The diagram shows a flowchart of a process for fabricating a miniature LED display panel using an LED transfer device.

[0038] In the fabrication process of miniature LED display panels, LED transfer devices are typically used to transfer miniature LEDs from the original miniature LED array onto the display substrate.

[0039] In existing technologies, combined with Figure 1 and Figure 2 As shown, the LED transfer device 10' includes a substrate 11', a transfer body 12', a transfer head 13', and a pressure head 14'. The transfer head 13' is disposed on the body 12' and is used to pick up micro-LEDs 20' from the original micro-LED array and precisely bond the micro-LEDs 20' to the display substrate 30'. The pressure head 14' is used to withstand external pressure and heat. Figure 2 As shown, the specific fabrication steps of the miniature light-emitting diode display panel include:

[0040] Step S1': After the transfer head 13' of the LED transfer device 10' picks up the micro LED 20', the electrode 21' of the micro LED 20' is aligned with the corresponding bonding structure 31' on the display substrate 30'.

[0041] Step S2': When the pressure head 14' is subjected to external force, the light-emitting diode transfer device 10' is pressed down, and the electrode 21' of the micro light-emitting diode 20' comes into contact with the corresponding bonding structure 31'. The heat transferred from the pressure head 14' to the transfer head 13' causes the micro light-emitting diode 20' to bond with the corresponding bonding structure 31'.

[0042] However, after the micro-LED 20' is bonded to the corresponding bonding structure 31' in step S2', the micro-LED 20' that was originally aligned in step S1 and the corresponding bonding structure 31' are misaligned. This affects the bonding stability between the micro-LED 20' and the bonding structure 31', and thus affects the lifespan of the micro-LED display panel.

[0043] The inventors of this application have discovered through research that the misalignment between the micro-LED 20' and the corresponding bonding structure 31' after step S2' is due to the fact that, due to material limitations, the coefficient of thermal expansion of the transfer body 12' on the LED transfer device 10' is different from that of the display substrate 30', and the coefficient of thermal expansion of the transfer body 12' is usually greater than that of the display substrate 30'. When the transfer body 12' on the LED transfer device 10' expands due to heat in step S2', the transfer head 13' on it causes the micro-LED 20' to shift relative to the corresponding bonding structure 31'. Specifically, the heating process of the transfer body 12' on the LED transfer device 10' in step S2' involves the pressure head 14' transferring heat through the transfer body 12' to the electrodes 21' of the micro-LED 20', and even to the bonding structure 31', causing the bonding metal to melt and achieve bonding.

[0044] Through meticulous and in-depth research, the applicant in this case has provided a solution to the problems existing in the prior art.

[0045] Figure 3 This is a schematic diagram of a light-emitting diode transfer device provided in an embodiment of this application.

[0046] like Figure 3 As shown, this application provides a light-emitting diode (LED) transfer device 10, which can be used to transfer LEDs and other components, and can serve as a main device in mass transfer technology. The LED transfer device 10 includes a substrate 11, a heat barrier layer 12, a transfer substrate 13, and multiple transfer heads 14. The heat barrier layer 12 is located on one side of the substrate 11, and the transfer substrate 13 is located on the side of the heat barrier layer 12 away from the substrate, that is, the substrate 11, the heat barrier layer 12, and the transfer substrate 13 can be stacked.

[0047] The transfer head 14 penetrates the heat barrier layer 12 and the transfer substrate 13, and protrudes from the surface 131 of the transfer substrate 13 away from the substrate 11. The transfer head 14 is used to adsorb the light-emitting diode.

[0048] Furthermore, the transfer head 14 is connected to the substrate 11.

[0049] Optionally, the light-emitting diode adsorbed by the transfer head 14 is a micro-LED or a sub-millimeter light-emitting diode.

[0050] The thermal conductivity of the transfer head 14 is greater than that of the transfer substrate 13. That is, the thermal conductivity of the transfer head 14 is better than that of the transfer substrate 13, and the transfer head 14 can transfer heat more easily than the transfer substrate 13.

[0051] In addition, such as Figure 3 As shown, the light-emitting diode transfer device 10 may also include a pressure head 15, which is located on the side of the substrate 11 away from the heat barrier layer 12. The pressure head 15 is used to withstand external pressure and heat.

[0052] In this embodiment, the thermal conductivity of the transfer head 14 is set to be greater than that of the transfer substrate 13. This makes it easier for the heat transferred from the substrate 11 side to be transferred along the transfer head 14, which can make the temperature rise of the transfer head 14 greater than that of the transfer substrate 13. This makes it possible to ensure that the transfer head 14 has a higher temperature while the transfer substrate 13 has a lower temperature. This helps to reduce the problem of the transfer substrate 13 being thermally expanded and causing the position of the transfer head 14 to shift, thereby improving the alignment accuracy of the transfer head 14.

[0053] Furthermore, by setting a heat barrier layer 12 between the substrate 11 and the transfer substrate 13, and by having the transfer head 14 penetrate the transfer substrate 13 and the heat barrier layer 12, the heat barrier layer 12 can block heat transfer to the transfer substrate 13 without blocking heat transfer to the transfer head 14. This is beneficial for achieving a higher temperature for the transfer head 14 while maintaining a lower temperature for the transfer substrate 13. This helps to further reduce the problem of the transfer head 14 shifting due to thermal expansion of the transfer substrate 13, and thus further improves the alignment accuracy of the transfer head 14.

[0054] Figure 4 for Figure 3 The diagram shows an application of the LED transfer device.

[0055] In one application scenario of this application embodiment, the light-emitting diode transfer device 10 can be used to fabricate a miniature light-emitting diode display panel. For example... Figure 4As shown, in the process of fabricating a micro LED display panel, the LED transfer device 10 can be used to adsorb LEDs 20 from the original LED array and precisely bond the LEDs 20 to the bonding structure 31 on the display substrate 30.

[0056] Please continue to refer to this. Figure 4 The specific steps for using the LED transfer device 10 are as follows:

[0057] Step S1: After the transfer head 14 of the LED transfer device 10 picks up the LED 20, the electrode 21 of the LED 20 is aligned with the corresponding bonding structure 31 on the display substrate 30.

[0058] Step S2: When the pressure head 15 is subjected to external force, the light-emitting diode transfer device 10 is pressed down, and the electrode 21 of the light-emitting diode 20 comes into contact with the corresponding bonding structure 31. The heat transferred from the pressure head 15 to the transfer head 14 causes the light-emitting diode 20 to bond with the corresponding bonding structure 31.

[0059] Using the LED transfer device 10 provided in this application embodiment, after step S2, the alignment accuracy between the LED 20 and the corresponding bonding structure 31 can be guaranteed, thereby ensuring the bonding stability between the LED 20 and the corresponding bonding structure 31.

[0060] In one implementation of this application, the transfer head 14 includes polydimethylsiloxane and graphene, and the transfer matrix 13 includes polydimethylsiloxane.

[0061] Through research, the inventors discovered that constructing thermally conductive channels in the polymer matrix is ​​the main way to improve the thermal conductivity of polymer-based materials. The close packing of thermally conductive materials in the polymer matrix makes it easy to form directional thermally conductive channels inside the material.

[0062] In this implementation, graphene is a high thermal conductivity material. The transfer head 14 includes polydimethylsiloxane and graphene. In the light-emitting diode transfer device 10, the transfer head 14 can form a directional heat conduction channel, so that heat is quickly transferred along the transfer head 14. This is beneficial to achieve a higher temperature for the transfer head 14 and a lower temperature for the transfer substrate 13. This helps to reduce the problem of thermal deformation of the transfer substrate 13 causing the transfer head 14 to shift position.

[0063] In addition, while improving the thermal conductivity of the transfer head 14, the graphene material does not affect the elasticity of the polydimethylsiloxane material itself, which allows the transfer head 14 to maintain good flexibility and helps to avoid damaging the light-emitting diode 20 it adsorbs.

[0064] Please continue to refer to this. Figure 3In one embodiment of this application, the heat barrier layer 12 includes a first heat insulation layer 121, the thermal conductivity of the first heat insulation layer 121 being less than the thermal conductivity of the transfer substrate 13.

[0065] In other words, the thermal conductivity of the first insulation layer 121 is lower than that of the transfer substrate 13.

[0066] The embodiments of this application can reduce the heat transferred from the substrate 11 to the transfer substrate 13 through the first heat insulation layer 121, which is beneficial to ensuring the heat transfer barrier effect of the first heat insulation layer 121 on the substrate 11 side.

[0067] In one implementation of this application, the first heat insulation layer 121 comprises a nanoporous silica material.

[0068] As can be seen from the characteristics of nanoporous silica materials, the solid phase thermal conduction path of nanoporous silica materials is long, and phonon scattering greatly reduces the macroscopic thermal conductivity of the material, so the solid phase contributes little to the thermal conductivity. The gas phase is separated and surrounded by the solid nanostructure within the nanopores, and gas molecules cannot exchange energy through expansion. Therefore, the solid phase thermal conductivity and heat convection heat transfer of nanoporous silica materials are both very small, making them excellent thermal insulation materials at room temperature.

[0069] Nanoporous silica materials, with their extremely low bulk density and numerous internal nanopores, can effectively suppress heat transfer modes such as heat conduction and heat convection.

[0070] This implementation helps to ensure the heat-blocking effect of the first heat insulation layer 121, which can prevent heat from being transferred to the transfer substrate 13, thereby enabling the transfer head 14 to have a higher temperature while the transfer substrate 13 has a lower temperature.

[0071] Furthermore, the first heat insulation layer 121 also includes silicon carbide material. At high temperatures, thermal radiation becomes the main heat transfer mechanism. Silicon carbide material can act as a light-shielding agent and has a good absorption effect on infrared radiation, thereby improving the suppression of thermal radiation heat transfer by the first heat insulation layer 121. This allows the first heat insulation layer 121 to effectively suppress all three heat transfer mechanisms: thermal conduction, thermal convection, and thermal radiation, thus further ensuring the heat blocking effect of the first heat insulation layer 121.

[0072] In one embodiment of this application, the first heat insulation layer 121 further includes a water-repellent agent.

[0073] When the LED transfer device 10 is placed in the air, the present application embodiment helps to avoid the problem that the first heat insulation layer 121 absorbs moisture, which leads to a decrease in its heat insulation effect.

[0074] It should be noted that the heat barrier layer 12 provided in this application embodiment can be a single-layer structure, and the heat barrier layer 12 is composed of a first heat insulation layer 121.

[0075] Figure 5 This is a schematic diagram of another light-emitting diode transfer device provided in an embodiment of this application.

[0076] In one embodiment of this application, such as Figure 5 As shown, the first heat insulation layer 121 includes nanoporous silica material, and the heat blocking layer 12 also includes a second heat insulation layer 122. The second heat insulation layer 122 is stacked with the first heat insulation layer 121, and the second heat insulation layer 122 is used to block heat radiation.

[0077] Specifically, the second heat insulation layer 122 includes at least one of aluminum foil and molybdenum steel foil. The second heat insulation layer 122 can shield infrared light with a radiation wavelength below 8 μm.

[0078] As can be seen from the characteristics of the above-mentioned nanoporous silica materials, they have a good inhibitory effect on heat conduction and heat convection, making them excellent thermal insulation materials at room temperature. However, nanoporous silica materials have high transmittance for infrared light with wavelengths below 8 μm.

[0079] Therefore, in this embodiment of the application, when the heat-blocking layer 12 includes a first heat-insulating layer 121, a second heat-insulating layer 122 is provided to block heat radiation. This allows the heat-blocking layer 12 to effectively suppress all three heat transfer methods: heat conduction, heat convection, and heat radiation, thus ensuring the heat-blocking effect of the heat-blocking layer 12. Consequently, during the use of the LED transfer device 10, it helps to reduce the heat transferred from the substrate 11 to the transfer substrate 13 through the heat-blocking layer 12, allowing heat to be quickly transferred along the transfer head 14. This facilitates achieving a higher temperature for the transfer head 14 while maintaining a lower temperature for the transfer substrate 13, preventing thermal deformation of the transfer substrate 13 and thus avoiding displacement of the transfer head 14.

[0080] Of course, in the embodiments of this application, the first heat insulation layer 121 may also include silicon carbide material and water-repellent agent to further improve the heat insulation effect of the heat barrier layer 12.

[0081] Figure 6 This is a schematic diagram of the structure of a heat barrier layer related to this application.

[0082] In one embodiment of this application, the heat-blocking layer 12 may include multiple layers of first heat-insulating layer 121 and multiple layers of second heat-insulating layer 122.

[0083] Optionally, such as Figure 6As shown, along the thickness direction Z of the heat barrier layer 12, the first heat insulation layer 121 and the second heat insulation layer 122 are arranged alternately.

[0084] The embodiments of this application can further ensure the heat insulation effect of the heat barrier layer 12, which is conducive to the rapid transfer of heat from the substrate 11 along the transfer head 14, while reducing the heat transferred to the transfer substrate 13. This is conducive to achieving a higher temperature for the transfer head 14 and a lower temperature for the transfer substrate 13.

[0085] In one embodiment of this application, please continue to refer to Figure 3 and Figure 5 The schematic diagram of the light-emitting diode transfer device 10 shown shows that the coefficient of thermal expansion of the heat-blocking layer 12 is less than that of the transfer substrate 13.

[0086] Optionally, the substrate 11 is a glass substrate with a thermal expansion coefficient of CTE1, the thermal barrier layer 12 has a thermal expansion coefficient of CET2, and the transfer substrate 13 has a thermal expansion coefficient of CET3, where CET1 < CET2 < CET3.

[0087] Furthermore, CET2-CET1 < CET3-CET2. That is, the thermal expansion coefficient of the heat barrier layer 12 is closer to the thermal expansion coefficient of the substrate 11 than that of the transfer substrate 13.

[0088] In this embodiment, the thermal expansion coefficient of the heat barrier layer 12 is set to be less than that of the transfer substrate 13. This allows the heat barrier layer 12 to deform less due to heat than the transfer substrate 13. Since the transfer head 14 penetrates both the transfer substrate 13 and the heat barrier layer 12, the heat barrier layer 12 can suppress the ability of the transfer substrate 13 to move due to thermal deformation. This helps to further reduce the problem of the transfer head 14 shifting position due to thermal deformation of the transfer substrate 13, thereby further improving the alignment accuracy of the transfer head 14.

[0089] Figure 7 This is a process flow diagram of the fabrication process of a light-emitting diode transfer device provided in an embodiment of this application.

[0090] This application also provides a method for fabricating a light-emitting diode (LED) transfer device, used to fabricate the LED transfer device 10 as provided in the above embodiments. The structure of the LED transfer device 10 can be as follows: Figure 3 , Figure 5 As shown. Please refer to. Figure 7 The preparation methods include:

[0091] Step A1: Provide a substrate 11, and sequentially prepare a heat barrier layer 12 and a transfer substrate 13 on one side of the substrate 11.

[0092] Step A2: Apply photoresist 16 to the surface of the transfer substrate 13 away from the substrate 11, and perform patterning design on the photoresist 16.

[0093] Step A3: Etch the transfer substrate 13 and the heat barrier layer 12 according to the pattern of the photoresist 16 to form a plurality of first holes K1.

[0094] Step A4: Prepare transfer head 14 in the first hole K1.

[0095] Step A5: Remove any remaining photoresist 16.

[0096] The thermal conductivity of the transfer head 14 is greater than that of the transfer substrate 13. Optionally, the thickness of the transfer substrate 13 is approximately 10 μm, and the thickness of the transfer head 14 is approximately 20 μm.

[0097] In the preparation method provided in this application embodiment, the thermal conductivity of the transfer head 14 is set to be greater than that of the transfer substrate 13. This makes it easier for the heat transferred from the substrate 11 side to be transferred along the transfer head 14, which makes the temperature rise of the transfer head 14 greater than that of the transfer substrate 13. This makes it possible to ensure that the transfer head 14 has a higher temperature while the transfer substrate 13 has a lower temperature. This helps to reduce the problem of the transfer substrate 13 being thermally expanded and causing the position of the transfer head 14 to shift, thereby improving the alignment accuracy of the transfer head 14.

[0098] Furthermore, by setting a heat barrier layer 12 between the substrate 11 and the transfer substrate 13, and by having the transfer head 14 penetrate the transfer substrate 13 and the heat barrier layer 12, the heat barrier layer 12 can block heat transfer to the transfer substrate 13 without blocking heat transfer to the transfer head 14. This is beneficial for achieving a higher temperature for the transfer head 14 while maintaining a lower temperature for the transfer substrate 13. This helps to further reduce the problem of the transfer head 14 shifting due to thermal expansion of the transfer substrate 13, and thus further improves the alignment accuracy of the transfer head 14.

[0099] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A light-emitting diode transfer device, characterized in that, include: Substrate; A heat-blocking layer is located on one side of the substrate; The transfer substrate is located on the side of the heat barrier layer away from the substrate; Multiple transfer heads penetrate the heat barrier layer and the transfer substrate, and protrude from the surface of the transfer substrate away from the substrate. The transfer heads are used to adsorb light-emitting diodes. The thermal conductivity of the transfer head is greater than that of the transfer substrate, and the thermal expansion coefficient of the thermal barrier layer is less than that of the transfer substrate.

2. The light-emitting diode transfer device according to claim 1, characterized in that, The transfer head comprises polydimethylsiloxane and graphene.

3. The light-emitting diode transfer device according to claim 1, characterized in that, The transfer head is connected to the substrate.

4. The light-emitting diode transfer device according to claim 1, characterized in that, The heat-blocking layer includes a first heat-insulating layer, the thermal conductivity of which is less than that of the transfer substrate.

5. The light-emitting diode transfer device according to claim 4, characterized in that, The first heat insulation layer comprises nanoporous silica material.

6. The light-emitting diode transfer device according to claim 5, characterized in that, The first heat insulation layer also includes silicon carbide material.

7. The light-emitting diode transfer device according to claim 6, characterized in that, The first insulation layer also includes a water-repellent agent.

8. The light-emitting diode transfer device according to claim 4, characterized in that, The heat-blocking layer further includes a second heat-insulating layer, which is stacked with the first heat-insulating layer and is used to block heat radiation.

9. The light-emitting diode transfer device according to claim 8, characterized in that, The second insulation layer comprises at least one of aluminum foil and molybdenum steel foil.

10. A method for fabricating a light-emitting diode transfer device, characterized in that, A method for preparing a light-emitting diode transfer device as described in any one of claims 1 to 9; the preparation method includes: The substrate is provided, and the heat barrier layer and the transfer substrate are sequentially formed on one side of the substrate; A photoresist is applied to the surface of the transfer substrate away from the substrate, and the photoresist is patterned. The transfer substrate and the heat barrier layer are etched according to the pattern of the photoresist to form a plurality of first holes; The transfer head is prepared in the first hole, and then the photoresist is removed.

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