Display panel
By employing a composite structure of a first barrier layer and a second barrier layer in the gate electrode, source electrode, and drain electrode of the thin-film transistor, the problem of decreased conductivity caused by the interaction between the metal electrode and the oxide material is solved, thereby improving the reliability and performance of the thin-film transistor.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
- Filing Date
- 2022-11-11
- Publication Date
- 2026-06-26
AI Technical Summary
The metal electrodes of oxide thin-film transistors are prone to interaction with oxide materials, leading to decreased conductivity and reliability issues.
A multilayer composite structure including a first barrier layer and a second barrier layer is adopted to prevent the metal layer from being oxidized and to prevent the diffusion of metal ions. Specific materials such as lanthanum boride and molybdenum-titanium alloy are used in the gate electrode, source electrode and drain electrode.
It effectively reduces the oxidation and bonding between the metal electrode and the active part, improves the conductivity and reliability of the thin film transistor, and prevents the formation of leakage paths.
Smart Images
Figure CN115692426B_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of display technology, and in particular relates to a display panel. Background Technology
[0002] Thin-film transistors (TFTs) are the core components of flat panel displays, primarily used in liquid crystal displays (LCDs), organic electroluminescence displays (OLEDs), and miniature light-emitting diodes (Mini-LEDs). Whether it's an LCD, OLED, or Mini-LED display, each pixel relies on TFTs for switching and driving.
[0003] Oxide thin-film transistors (TFTs) generally employ three structures for mass production: etch stop layer (ESL), back channel etching (BCE), and top gate. To improve the stability of TFTs, the ESL structure is widely used, effectively reducing the impact of external environmental factors and etching damage to the source / drain electrodes on the back channel. However, ESL-structured TFTs require more photomask passes and increase the TFT size and parasitic capacitance. BCE-structured TFTs do not require an etch stop layer, allowing for a smaller channel compared to ESL structures. However, the back channel is susceptible to damage during source / drain electrode etching, significantly impacting TFT stability. Top gate-structured TFTs have less overlap between the gate and source / drain electrodes, significantly reducing parasitic capacitance. Furthermore, their back channel is protected by an insulating layer, unaffected by source / drain electrode etching, resulting in good stability.
[0004] However, since the active part of a thin-film transistor is made of oxide material, the electrodes of the thin-film transistor are prone to interacting with the oxide material, which leads to a decrease in the reliability of the thin-film transistor. Summary of the Invention
[0005] This application provides a thin display panel to reduce the phenomenon that the interaction between the metal electrode and the active part of the semiconductor reduces the conductivity of the metal electrode, thereby improving the reliability of the thin film transistor.
[0006] In a first aspect, embodiments of this application provide a display panel, including:
[0007] An array substrate, the array substrate comprising a plurality of thin-film transistors;
[0008] A pixel layer is disposed on the array substrate and connected to the thin-film transistor;
[0009] The thin-film transistor includes:
[0010] Gate electrode;
[0011] An active portion is disposed at a distance from the gate electrode, the active portion has a channel region, and the active portion is made of an oxide material;
[0012] The source electrode is electrically connected to the active part; and
[0013] The drain electrode is electrically connected to the active part and is disposed on the same layer as the source electrode but spaced apart from it.
[0014] At least one of the gate electrode, the source electrode, and the drain electrode includes a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer, wherein the second barrier layer is made of a different material than the first barrier layer.
[0015] Optionally, the material of the first barrier layer includes a boronized metal material, and the material of the second barrier layer is an alloy material.
[0016] Optionally, the material of the first barrier layer is lanthanum boride, and the material of the second barrier layer is molybdenum-titanium alloy, molybdenum-tungsten alloy, or titanium-tungsten alloy.
[0017] Optionally, the thickness of the first barrier layer is greater than or equal to 100 angstroms and less than or equal to 500 angstroms.
[0018] Optionally, the gate electrode includes a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer;
[0019] In the thickness direction of the thin-film transistor, the gate electrode is located above the active portion, and the orthogonal projection of the gate electrode onto the active portion is located within the active portion.
[0020] Optionally, both the source electrode and the drain electrode include a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer;
[0021] Both the source electrode and the drain electrode are disposed above the active portion, and the source electrode and the drain electrode are spaced apart from the gate electrode.
[0022] Optionally, the gate electrode includes a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer;
[0023] In the thickness direction of the thin-film transistor, the active portion is disposed above the gate electrode, and the projection of the active portion onto the gate electrode at least partially coincides with the gate electrode.
[0024] Optionally, both the source electrode and the drain electrode include a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer;
[0025] The source electrode covers one end of the active portion;
[0026] The drain electrode covers the other end of the active part.
[0027] Secondly, embodiments of this application also provide a display panel, including:
[0028] An array substrate, the array substrate comprising a plurality of thin-film transistors;
[0029] A pixel layer is disposed on the array substrate and connected to the thin-film transistor;
[0030] The thin-film transistor includes:
[0031] Gate electrode;
[0032] An active portion is disposed at a distance from the gate electrode, the active portion has a channel region, and the active portion is made of an oxide material;
[0033] The source electrode is electrically connected to the active part; and
[0034] The drain electrode is electrically connected to the active part and is disposed on the same layer as the source electrode but spaced apart from it.
[0035] Wherein, at least one of the gate electrode, the source electrode and the drain electrode includes a metal layer and a first barrier layer disposed above the metal layer, wherein the material of the first barrier layer is a boronized metal material or an alloy material.
[0036] Optionally, at least one of the gate electrode, the source electrode, and the drain electrode further includes:
[0037] A second barrier layer is disposed below the metal layer, and the material of the second barrier layer is the same as that of the first barrier layer.
[0038] Optionally, the materials of the first barrier layer and the second barrier layer are both lanthanum boride, molybdenum-titanium alloy, molybdenum-tungsten alloy, or titanium-tungsten alloy.
[0039] In the display panel of this application embodiment, by setting at least one of the gate electrode, source electrode and drain electrode as a stacked composite structure including a first barrier layer, a metal layer and a second barrier layer, the first barrier layer and the second barrier layer can prevent the metal layer from being oxidized and prevent the diffusion of metal layer ions, thereby reducing the phenomenon that the metal layer combines with oxygen in the active part to form metal oxide and reduce the conductivity of the metal layer, and can also prevent metal ions from diffusing between layers, thereby avoiding the formation of leakage paths between layers and improving the reliability of thin film transistors. Attached Figure Description
[0040] Figure 1 This is a schematic diagram of the structure of the display panel provided in an embodiment of this application.
[0041] Figure 2 for Figure 1 The diagram shows a first structural schematic of a thin-film transistor in a display panel.
[0042] Figure 3 for Figure 2 The diagram shows a composite layer structure in a thin-film transistor.
[0043] Figure 4 for Figure 1 The diagram shows a second structural representation of a thin-film transistor in a display panel.
[0044] Figure 5 for Figure 1 The diagram shows a third type of thin-film transistor structure in the display panel.
[0045] Figure 6 for Figure 1 The diagram shows a fourth structure of thin-film transistors in the display panel. Detailed Implementation
[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0047] Please see Figure 1 , Figure 1This is a schematic diagram of the structure of a display panel provided in an embodiment of this application. The embodiment of this application provides a display panel 1, which may include an array substrate 10 and a pixel layer 20. When the display surface of the display panel 1 faces upwards, the pixel layer 20 is disposed above the array substrate 10 in the thickness direction of the display panel, that is, the pixel layer 20 is closer to the display surface of the display panel 1. The array substrate 10 may include a plurality of thin-film transistors 100, which may be arranged in an array on a substrate or a glass substrate. The pixel layer 20 may include a plurality of pixel units, each pixel unit may be connected to at least one thin-film transistor 100, and the pixel layer 20 operates under the drive of the thin-film transistors 100 to enable the display panel 1 to display different colors and images.
[0048] For example, display panel 1 can be a liquid crystal display (LCD) panel. An LCD is constructed by placing a liquid crystal cell between two parallel glass substrates. Thin film transistors (TFTs) are disposed on the lower glass substrate, and color filters are disposed on the upper glass substrate. The rotation direction of the liquid crystal molecules is controlled by changing the signals and voltages on the TFTs, thereby controlling whether polarized light is emitted from each pixel to achieve the display purpose. Display panel 1 can also be an organic light-emitting diode (OLED) panel. OLEDs are current-driven organic light-emitting devices that emit light through the injection and recombination of charge carriers. The luminous intensity is proportional to the injected current. Under the influence of an electric field, holes generated at the anode and electrons generated at the cathode move and are injected into the hole transport layer and electron transport layer, respectively, migrating to the light-emitting layer. When they meet in the light-emitting layer, they generate excitons, which excite the light-emitting molecules to ultimately produce visible light. Display panel 1 can also be a Mini-LED panel. Mini-LED is simply an upgrade to the backlight technology of an LCD screen; it is essentially still an LCD screen. Mini-LED miniaturizes the LED beads in the backlight layer of an LCD screen, with each LED bead measuring approximately 50-200μm in size. This allows the backlight layer to accommodate more backlight beads, resulting in better brightness and brightness uniformity for the screen.
[0049] Whether it's LCD, OLED, or Mini-LED displays, each pixel relies on thin-film transistors (TFTs) for switching and driving. Among these, oxide thin-film transistors (OTTs) are widely used in flat panel displays due to their high mobility, good large-area uniformity, and low fabrication temperature. OTTs have various structural forms, among which the mass-produced types include Etch-Stop Layer (ESL), Back Channel Etch (BCE), and Top Gate (TG). To improve the stability of OTTs, ESL structures are widely used, as this structure effectively reduces the impact of external environmental factors and etching damage to the source and drain electrodes on the back channel. However, ESL structures require more photomask passes and significantly increase the transistor's size and parasitic capacitance. BCE structures do not require an etching stop layer, and the channel can be significantly smaller than that of ESL structures. However, the back channel is easily damaged during source and drain electrode etching, significantly affecting the transistor's stability. The thin-film transistor with TG structure has less overlap between the gate electrode and the source and drain electrodes, which can significantly reduce parasitic capacitance. At the same time, its back channel is protected by an insulating layer and is not affected by the etching of the source and drain electrodes, thus exhibiting good stability.
[0050] Regardless of the structural form, thin-film transistors (TFTs) typically use metals with high thermal and electrical conductivity and low resistivity, such as copper (Cu) and aluminum (Al), for their gate, source, and drain electrodes. However, metals readily combine with oxygen to form metal oxides under high temperatures or humid environments, increasing the conductivity of these electrodes. Furthermore, metal ions can easily diffuse into the active channel, leading to decreased TFT reliability. In other words, during TFT fabrication, interactions can easily occur between the metal electrodes and the semiconductor active section, reducing the conductivity of the metal electrodes and affecting the performance of the active section, thus degrading the overall performance of the TFT.
[0051] To address the aforementioned issues, this application provides an improvement to the thin-film transistor 100. The composition and structure of the thin-film transistor 100 will be described below with reference to the accompanying drawings.
[0052] For example, please refer to Figure 1 And see Figure 2 and Figure 3 , Figure 2 for Figure 1 The diagram shown is a schematic of the first structure of a thin-film transistor in a display panel. Figure 3 for Figure 2The diagram shows a schematic of the composite layer structure in a thin-film transistor. The thin-film transistor 100 may include a gate electrode G, an active portion ACT, a source electrode S, and a drain electrode D. In the thickness direction of the thin-film transistor 100, the active portion ACT may be spaced apart from the gate electrode G. For example, a gate insulating layer GI may be provided between the active portion ACT and the gate electrode G to separate the active portion ACT from the gate electrode G. The active portion ACT has a channel region, and the material of the active portion ACT is an oxide material. The source electrode S is electrically connected to the active portion ACT, and the drain electrode D is electrically connected to the active portion ACT. The source electrode S and the drain electrode D are in the same layer and spaced apart. The channel region is used for carrier flow, thereby connecting the source electrode S and the drain electrode D, or separating the source electrode S and the drain electrode D. In this electrode, at least one of the gate electrode G, source electrode S, and drain electrode D, 101, includes a metal layer 1011, a first barrier layer 1013 disposed above the metal layer 1011, and a second barrier layer 1015 disposed below the metal layer 1011. The first barrier layer 1013 and the second barrier layer 1015 are made of different materials. Both the first barrier layer 1013 and the second barrier layer 1015 can prevent the metal layer 1011 from being oxidized and can prevent the diffusion of ions from the metal layer 1011.
[0053] It should be noted that, for the electrode 101, which includes a metal layer 1011, a first barrier layer 1013 disposed above the metal layer 1011, and a second barrier layer 1015 disposed below the metal layer 1011, for ease of explanation, at least one of the gate electrode G, the source electrode S, and the drain electrode D is adopted as a composite layer structure. The composite layer structure is that is, a structure including a metal layer 1011, a first barrier layer 1013 disposed above the metal layer 1011, and a second barrier layer 1015 disposed below the metal layer 1011.
[0054] By configuring at least one of the gate electrode G, source electrode S, and drain electrode D into a stacked composite structure including a first barrier layer 1013, a metal layer 1011, and a second barrier layer 1015, the first barrier layer 1013 and the second barrier layer 1015 can prevent the metal layer 1011 from being oxidized and can prevent the diffusion of metal layer 1011 ions. This can reduce the phenomenon that the metal layer 1011 combines with oxygen in the active part ACT to form metal oxides and reduce the conductivity of the metal layer 1011. It can also prevent metal ions from diffusing between layers, thereby avoiding the formation of leakage paths between layers and improving the reliability of the thin film transistor 100.
[0055] For example, the material of the first barrier layer 1013 includes a boron metal material, which can be a lanthanide element. For instance, the material of the first barrier layer 1013 can be lanthanum boride (LnB). It should be noted that the first barrier layer 1013 uses a combination of lanthanide metals and boron. By adjusting the proportion of boron, lanthanum boride can be transformed from a semiconductor into a conductor. Utilizing the advantages of lanthanum boride—high melting point, resistance to ion bombardment, oxidation resistance, thermal conductivity, and good chemical stability—it serves as a barrier layer for the metal layer 1011. The thickness of the first barrier layer 1013 can be greater than or equal to 100 angstroms and less than or equal to 500 angstroms. The material of the second barrier layer 1015 differs from that of the first barrier layer 1013. The material of the second barrier layer 1015 can be an alloy material, such as a molybdenum-titanium (MoTi) alloy, a molybdenum-tungsten (MoW) alloy, or a titanium-tungsten (TiW) alloy. The thickness of the second barrier layer 1015 can be set with reference to the thickness of the first barrier layer 1013. For example, the thickness of the second barrier layer 1015 can be any value in the range of 100 angstroms to 500 angstroms. During the fabrication of the thin-film transistor 100, the metal structure of the first metal layer and / or the second metal layer is changed to a MoTi / Cu / LnB composite layer structure, and LnB can be used as the upper metal layer.
[0056] It should be noted that the material of the first barrier layer 1013 is different from that of the second barrier layer 1015. Both the first barrier layer 1013 and the second barrier layer 1015 are used to prevent the metal layer 1011 from being oxidized and to block the diffusion of the metal layer 1011. Therefore, the materials of the first barrier layer 1013 and the second barrier layer 1015 are not limited to the above-mentioned material combination. For example, the material of the first barrier layer 1013 can also be an alloy material, and the material of the second barrier layer 1015 can also be a boronized metal material. Of course, the materials of the first barrier layer 1013 and the second barrier layer 1015 can also be other types, which will not be listed here.
[0057] The metal layer 1011 can be made of a metal with high thermal and electrical conductivity and low resistivity, such as copper (Cu) or aluminum (Al). The thickness of the metal layer 1011 is greater than the thickness of the first barrier layer 1013 or the second barrier layer 1015, in order to reduce the impedance of the metal layer 1011 and improve its conductivity.
[0058] The aforementioned composite layer structure can be applied to at least one electrode 101 of the gate electrode G, source electrode S, and drain electrode D of the thin-film transistor 100.
[0059] For example, please refer to Figures 1 to 3 And see Figure 4 , Figure 4 for Figure 1The diagram shows a second structural schematic of a thin-film transistor in a display panel. A composite layer structure can be used for the gate electrode G in a top-gate thin-film transistor 100. In the thickness direction of the thin-film transistor 100, the gate electrode G is located above the active portion ACT, and the projection of the gate electrode G onto the active portion ACT is located within the active portion ACT. Using a composite layer structure for the gate electrode G can prevent the metal of the gate electrode G from being oxidized or prevent the diffusion of metal ions from the gate electrode G, thus avoiding the formation of leakage paths and affecting the performance of the thin-film transistor 100.
[0060] In this design, the gate electrode G corresponds to the channel region of the active part ACT, while the source electrode S and drain electrode D are both disposed above the active part ACT. The source electrode S and drain electrode D are spaced apart from the gate electrode G to reduce parasitic capacitance. The source electrode S and drain electrode D can be disposed on the same layer as the gate electrode G. During fabrication, a single layer of metal can be deposited, and then the source electrode S, drain electrode D, and gate electrode G can be distinguished by etching or patterning, thus simplifying the fabrication of the thin-film transistor 100.
[0061] For example, an interlayer insulating layer (ILD) and a passivation layer (PV) can be sequentially disposed above the gate electrode G to separate the gate electrode G from the source electrode S and the drain electrode D, and to separate the gate electrode G from other devices, thus preventing interference between conductive parts. Below the active part (ACT), a test part (CT), a bottom spare metal part (LS), and a barrier layer (Barrier) can also be sequentially disposed.
[0062] For example, the electrode 101 or combination of electrodes 101 with a composite layer structure can also be: the source electrode S has a composite layer structure, the drain electrode D has a composite layer structure, the source electrode S has a composite layer structure, and the drain electrode D has a composite layer structure; the gate electrode G has a composite layer structure, and the source electrode S has a composite layer structure, the gate electrode G has a composite layer structure, and the drain electrode D has a composite layer structure; the gate electrode G, source electrode S, and drain electrode D all have a composite layer structure. This can prevent the metal layer 1011 of the electrode from being oxidized, forming metal oxide and reducing the conductivity of the metal layer 1011. It can also reduce ion diffusion in the metal layer 1011 of the electrode, preventing the formation of leakage paths in the interlayer structure and reducing the performance of the thin film transistor 100.
[0063] For example, please refer to Figures 1 to 4 And see Figure 5 and Figure 6 , Figure 5 for Figure 1 The diagram shown illustrates a third structure of thin-film transistors in the display panel. Figure 6 for Figure 1The diagram shows a fourth structural schematic of a thin-film transistor in a display panel. A composite layer structure can be used for the gate electrode G in a back-channel thin-film transistor 100. In the thickness direction of the thin-film transistor 100, the active portion ACT is disposed above the gate electrode G, and the projection of the active portion ACT onto the gate electrode G coincides with the gate electrode G. The source electrode S covers one end of the active portion ACT, and a portion of the source electrode S is located above the active portion ACT; that is, the source electrode S and the gate electrode G are disposed on different sides of the active portion ACT. The drain electrode D covers the other end of the active portion ACT, and a portion of the drain electrode D is located above the active portion ACT; that is, the drain electrode D is also disposed on different sides of the active portion ACT from the gate electrode G. This is to prevent interference between the source electrode G, the drain electrode D, and the gate electrode G.
[0064] A gate insulating layer GI is disposed between the active part ACT and the gate electrode G to separate the active part ACT from the gate electrode G. A substrate layer is disposed on the side of the gate electrode G away from the active part ACT, which serves as a flat fabrication bottom when fabricating the thin-film transistor 100. A passivation layer PV is covered on the source electrode G, the drain electrode D, and the active part ACT to prevent the source electrode G, the drain electrode D, and the active part ACT from being attacked by external water and oxygen.
[0065] For example, the electrode 101 or combination of electrodes 101 with a composite layer structure can also be: the source electrode S has a composite layer structure, the drain electrode D has a composite layer structure, the source electrode S has a composite layer structure, and the drain electrode D has a composite layer structure; the gate electrode G has a composite layer structure, and the source electrode S has a composite layer structure, the gate electrode G has a composite layer structure, and the drain electrode D has a composite layer structure; the gate electrode G, source electrode S, and drain electrode D all have a composite layer structure. This can prevent the metal layer 1011 of the electrode from being oxidized, forming metal oxide and reducing the conductivity of the metal layer 1011. It can also reduce ion diffusion in the metal layer 1011 of the electrode, reducing the formation of leakage paths in the interlayer structure and thus reducing the performance of the thin film transistor 100.
[0066] For example, the composite layer structure can also be applied to the electrode structure of the etch barrier layer type thin film transistor 100. The application method can be referred to the above description, and will not be repeated here.
[0067] It should be noted that in some embodiments, the first barrier layer 1013 and the second barrier layer 1015 can be made of the same material. Both the first barrier layer 1013 and the second barrier layer 1015 can prevent the metal layer 1011 from being oxidized, thus preventing the formation of metal oxide and reducing the conductivity of the electrode. The first barrier layer 1013 and the second barrier layer 1015 can also prevent the diffusion of ions in the metal layer 1011, preventing the formation of leakage paths and affecting the performance of the thin-film transistor 100. For example, the materials of the first barrier layer 1013 and the second barrier layer 1015 can be boride metal materials or alloy materials. The metal material in the boride metal material can be a lanthanide element. For example, the materials of the first barrier layer 1013 and the second barrier layer 1015 can both be lanthanum boride. The alloy material can be a molybdenum-titanium alloy.
[0068] In the display panel 1 provided in this application embodiment, at least one electrode 101 among the gate electrode G, source electrode S, and drain electrode D is configured as a stacked composite structure including a first barrier layer 1013, a metal layer 1011, and a second barrier layer 1015. The first barrier layer 1013 and the second barrier layer 1015 can prevent the metal layer 1011 from being oxidized and can prevent the diffusion of metal layer 1011 ions. This can reduce the phenomenon that the metal layer 1011 combines with oxygen in the active part ACT to form metal oxide and reduce the conductivity of the metal layer 1011. It can also prevent metal ions from diffusing between layers, thereby avoiding the formation of leakage paths between layers and improving the reliability of the thin film transistor 100.
[0069] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.
[0070] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.
[0071] The display panel provided in the embodiments of this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A display panel, characterized in that, include: An array substrate, the array substrate comprising a plurality of thin-film transistors; A pixel layer is disposed on the array substrate and connected to the thin-film transistor; The thin-film transistor includes: Gate electrode; An active portion is disposed at a distance from the gate electrode, the active portion has a channel region, and the active portion is made of an oxide material; The source electrode is electrically connected to the active part; and The drain electrode is electrically connected to the active part and is disposed on the same layer as the source electrode but spaced apart from it. At least one of the gate electrode, the source electrode, and the drain electrode includes a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer. The second barrier layer is made of a different material than the first barrier layer. The first barrier layer is made of lanthanum boride, and the second barrier layer is made of molybdenum-titanium alloy, molybdenum-tungsten alloy, or titanium-tungsten alloy.
2. The display panel according to claim 1, characterized in that, The thickness of the first barrier layer is greater than or equal to 100 angstroms and less than or equal to 500 angstroms.
3. The display panel according to claim 1 or 2, characterized in that, The gate electrode includes a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer; In the thickness direction of the thin-film transistor, the gate electrode is located above the active portion, and the orthogonal projection of the gate electrode onto the active portion is located within the active portion.
4. The display panel according to claim 3, characterized in that, Both the source electrode and the drain electrode include a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer; Both the source electrode and the drain electrode are disposed above the active portion, and the source electrode and the drain electrode are spaced apart from the gate electrode.
5. The display panel according to claim 1 or 2, characterized in that, The gate electrode includes a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer; In the thickness direction of the thin-film transistor, the active portion is disposed above the gate electrode, and the projection of the active portion onto the gate electrode at least partially coincides with the gate electrode.
6. The display panel according to claim 5, characterized in that, Both the source electrode and the drain electrode include a metal layer, a first barrier layer disposed above the metal layer, and a second barrier layer disposed below the metal layer; The source electrode covers one end of the active portion; The drain electrode covers the other end of the active part.
7. A display panel, characterized in that, include: An array substrate, the array substrate comprising a plurality of thin-film transistors; A pixel layer is disposed on the array substrate and connected to the thin-film transistor; The thin-film transistor includes: Gate electrode; An active portion is disposed at a distance from the gate electrode, the active portion has a channel region, and the active portion is made of an oxide material; The source electrode is electrically connected to the active part; and The drain electrode is electrically connected to the active part and is disposed on the same layer as the source electrode but spaced apart from it. Wherein, at least one of the gate electrode, the source electrode and the drain electrode includes a metal layer, a first barrier layer disposed above the metal layer and a second barrier layer disposed below the metal layer, wherein the material of the first barrier layer and the material of the second barrier layer are both lanthanum boride.