Organic-inorganic quantum dot hybrid infrared up-conversion device and preparation method

Abstract

The application relates to the technical field of photoelectric detectors, in particular to an organic-inorganic quantum dot mixed infrared up-conversion device and a preparation method thereof. The mixed infrared up-conversion device comprises an organic infrared detector, an intermediate connecting layer and an inorganic quantum dot light-emitting diode. The organic infrared detector comprises an anode substrate, a hole blocking layer and an infrared organic layer in sequence. The intermediate connecting layer is arranged above the infrared organic layer, and the material of the intermediate connecting layer is NiO x ; the inorganic quantum dot light-emitting diode is arranged above the intermediate connecting layer and comprises a hole transport layer, an inorganic quantum dot light-emitting layer, an electron transport layer and a cathode in sequence. The application provides an effective method for preparing a solution-processed infrared up-conversion device, can reduce the preparation cost of the device, comprehensively improves the performance of the infrared up-conversion device, and obtains excellent performances such as low driving voltage, high contrast and high light-emitting quality.

Description

Technical Field

[0001] This invention relates to the field of photoelectric detector technology, specifically to an organic-inorganic quantum dot hybrid infrared up-conversion device and its preparation method. Background Technology

[0002] Infrared upconversion devices have potential applications in biomedicine, night vision, remote sensing, and anti-counterfeiting technology. The upconversion process involved in these devices involves absorbing low-energy photons, converting them into electrical signals, and then emitting high-energy photons—a process of converting invisible long-wavelength infrared light into shorter-wavelength visible light. Early upconversion devices were mainly based on traditional inorganic semiconductor materials, only capable of converting short-infrared to near-infrared light. Furthermore, such all-inorganic upconversion devices require very high lattice parameter matching and cannot be fabricated on flexible substrates. This limits the application of traditional inorganic infrared upconversion devices.

[0003] In recent years, with the continuous emergence of organic materials and their numerous advantages over inorganic materials, all-organic infrared up-conversion devices, which utilize organic materials for both infrared detection and visible light emission units, have experienced rapid development, resulting in significant improvements in device performance such as photon conversion efficiency and contrast. However, these all-organic infrared up-conversion devices suffer from poor environmental stability, emit visible light with a wide full width at half maximum (FWHM), and many still require vacuum thermal deposition technology to fabricate the organic layer, greatly increasing manufacturing costs.

[0004] Furthermore, the intermediate connecting layer is crucial for achieving an effective combination of the detection and emission units. Some existing infrared up-conversion devices completely omit the connecting layer, while others improve performance by adjusting the intermediate interface. The effective connecting layer between the detection and emission units is still under exploration. For solution-processed infrared up-conversion devices with broader applications, the choice of intermediate connecting layer materials is extremely limited. Currently, PEDOT:PSS aqueous solution or MoO3 solution are mainly used as connecting layer materials. However, PEDOT:PSS aqueous solution is difficult to deposit on organic layers, and as a connecting layer, PEDOT:PSS must reach a thickness of tens of nanometers, which introduces a large number of water molecules, inevitably affecting the photoelectric properties of the underlying infrared organic layer. Additionally, in the dark, infrared up-conversion devices using MoO3 as the connecting layer emit light under low voltage drive, but their luminescence performance under infrared light irradiation is not ideal, resulting in low device contrast. Summary of the Invention

[0005] One of the objectives of this invention is to provide an organic-inorganic quantum dot hybrid infrared up-conversion device that can reduce device fabrication costs and comprehensively improve the performance of infrared up-conversion devices, achieving excellent performance such as low driving voltage, high contrast, and high luminous quality.

[0006] To achieve the above objectives, an organic-inorganic quantum dot hybrid infrared up-conversion device is provided, comprising an organic infrared detector, an intermediate connecting layer, and an inorganic quantum dot light-emitting diode;

[0007] The organic infrared detector comprises, in sequence, an anode substrate, a hole-blocking layer, and an infrared organic layer;

[0008] The intermediate connecting layer is disposed above the infrared organic layer, and the material of the intermediate connecting layer is NiO. X ;

[0009] The inorganic quantum dot light-emitting diode is disposed above the intermediate connection layer and includes, in sequence, a hole transport layer, an inorganic quantum dot light-emitting layer, an electron transport layer, and a cathode.

[0010] Principles and advantages:

[0011] 1. The design employs a three-layer structure consisting of an organic infrared detector, an intermediate connecting layer, and an inorganic quantum dot light-emitting diode. The organic detector generates photoexcitons under incident infrared light, which then separate into electrons and holes (free charge carriers), exhibiting good photo-to-electric conversion capabilities. The inorganic quantum dot light-emitting diode possesses extremely high electro-optical conversion efficiency and excellent luminous quality. The intermediate connecting layer, NiO... X This design possesses a suitable energy level between the organic detector and the inorganic quantum dot light-emitting diode (LED), along with appropriate mobility, enabling efficient extraction of charge carriers from the detection unit and injection into the LED. The combination of the organic detector, the inorganic quantum dot LED, and their intermediate connecting layer in this scheme integrates the advantages of both all-inorganic and all-organic infrared up-conversion devices while avoiding their disadvantages. Furthermore, it can be fabricated using an all-solution method, resulting in low cost and a simple fabrication process. It can also be used in flexible devices, showing broad application prospects.

[0012] 2. Compared to the intermediate connecting layer PEDOT:PSS in existing infrared up-conversion devices, NiO... x As an intermediate connecting layer, it only needs to be a few nanometers thick, introducing fewer water molecules and thus having little impact on the underlying organic layer. Meanwhile, NiO... x It can be effectively deposited on the organic layer, forming a good heterogeneous interface with the organic layer, laying a good foundation for the subsequent deposition of the organic hole transport layer, and playing a key role in the final structural quality of the infrared up-conversion device. Moreover, compared with PEDOT:PSS and MoO3, NiO...x The hole extraction barrier between NiO and the infrared organic layer is lower, allowing for effective hole extraction. Meanwhile, NiO... x The energy level barrier between the NiO and adjacent organic hole transport layers is relatively large. In the dark state, it is difficult for holes to be injected into the emissive layer through this interface. Therefore, the device can only emit visible light at a relatively high driving voltage. However, under infrared light illumination, due to the high energy barrier of NiO, the visible light emission is significantly reduced. x It exhibits high hole mobility, enabling rapid extraction of holes from the infrared organic layer and efficient transfer to the light-emitting unit. Therefore, the overall device demonstrates high sensitivity to infrared light and low driving voltage. Testing revealed a minimum turn-on voltage of 1.6V (the voltage corresponding to a luminance of 0.1 cd / m²), excellent luminous performance, a maximum luminance of 6274 cd / m², and a contrast ratio as high as 48800, making it one of the best-performing infrared up-conversion devices reported to date.

[0013] Furthermore, the intermediate connecting layer uses NiO with a concentration of 16 mg / ml-30 mg / ml. X It is made from a solution.

[0014] Beneficial effects: By adjusting the concentration, NiO can be effectively regulated. X The thickness of the intermediate layer film can be effectively adjusted to control the NiO content. X The intermediate layer has the ability to extract charge carriers from the detection unit and inject them into the light-emitting unit.

[0015] Furthermore, the infrared organic layer is composed of the donor DPP-DTT and the acceptor PC. 71 BM mixes materials into a layer according to a set volume ratio.

[0016] Beneficial effects: Because DPP-DTT is an electron donor, PC 71 BM is an electron acceptor, and adjusting the ratio between the two can effectively regulate the ability of excitons in the infrared organic layer to separate into free carriers.

[0017] Furthermore, the donor DPP-DTT and the receptor PC 71 The volume ratio of BM is 1:1.

[0018] Beneficial effects: At this ratio, the infrared organic layer can obtain the strongest exciton separation capability, resulting in the highest photoelectric conversion efficiency of the infrared organic layer.

[0019] Furthermore, the material of the hole transport layer is any one of PVK, poly-TPD, and TFB.

[0020] Beneficial effects: Several hole transport materials can be prepared by solution processing, which provides the conditions for obtaining infrared up-conversion devices with full solution processing. They also have energy levels that are well matched with the quantum dot emitting layer, which can effectively inject holes.

[0021] Furthermore, both the hole blocking layer and the electron transport layer are made of ZnO.

[0022] Beneficial effects: ZnO has a deep valence band, which effectively prevents holes from entering the device without illumination. Simultaneously, ZnO has energy levels that closely match the quantum dot emissive layer, resulting in a low electron injection barrier at the interface. Furthermore, ZnO's high electron mobility allows for rapid electron transport. Therefore, it is possible to effectively inject electrons into the quantum dot emissive layer even under illumination.

[0023] The second objective of this invention is to provide a method for preparing an organic-inorganic quantum dot hybrid infrared up-conversion device, comprising the following steps:

[0024] S1. A material solution for preparing the infrared organic layer and the intermediate connecting layer, wherein the material solution for the infrared organic layer includes a DPP-DTT solution and PC. 71 BM solution; the material solution of the intermediate connecting layer includes NiO. x Solution.

[0025] S2. Perform standardized cleaning, drying, and UV ozone treatment on the prepared anode substrate;

[0026] S3. Hole blocking layer, infrared organic layer, intermediate connection layer, hole transport layer, inorganic quantum dot light-emitting layer and electron transport layer are sequentially prepared on the treated anode substrate by solution spin coating technology. Finally, the cathode is prepared by vacuum thermal deposition technology.

[0027] The intermediate connecting layer is made of NiO X Solution preparation.

[0028] Beneficial effects: NiOx, as an intermediate connecting layer, only requires a thickness of a few nanometers, introducing fewer water molecules and thus having minimal impact on the underlying organic layer. Simultaneously, NiOx can be effectively deposited on the organic layer, forming a good heterogeneous interface, laying a solid foundation for the subsequent deposition of the organic hole transport layer, and playing a crucial role in the final structural quality of the infrared up-conversion device. Furthermore, NiOx possesses high hole mobility and suitable energy levels, allowing it to effectively extract holes from the detection unit and inject them into the luminescent unit as an intermediate connecting layer material.

[0029] Furthermore, the NiO X The concentration of the solution is 16 mg / ml-30 mg / ml.

[0030] Beneficial effects: By adjusting the concentration, NiO can be effectively regulated. X The thickness of the intermediate layer film can be effectively adjusted to control the NiO content. XThe intermediate layer has the ability to extract charge carriers from the detection unit and inject them into the light-emitting unit.

[0031] Furthermore, the infrared organic layer is composed of the donor DPP-DTT and the acceptor PC. 71 It is made by mixing BM according to a set volume ratio to form a mixed solution.

[0032] Beneficial effects: Because DPP-DTT is an electron donor, PC 71 BM is an electron acceptor, and adjusting the ratio between the two can effectively regulate the ability of excitons in the infrared organic layer to separate into free carriers.

[0033] Furthermore, the donor DPP-DTT and the receptor PC 71 The volume ratio of BM is 1:1.

[0034] Beneficial effects: At this ratio, the infrared organic layer achieves the strongest exciton separation capability, resulting in the highest photoelectric conversion efficiency. Under the same light intensity irradiation, more free charge carriers are generated, ensuring that more charge carriers enter the light-emitting unit and guaranteeing high-efficiency light emission performance.

[0035] Furthermore, in step S3, the intermediate connecting layer is prepared in an atmospheric environment using dynamic spin coating technology, while the hole blocking layer, infrared organic layer, hole transport layer, quantum dot luminescent layer, and electron transport layer are all prepared in a glove box using static spin coating technology.

[0036] Beneficial effects: Enables optimal deposition of each functional layer.

[0037] Furthermore, in step S3, the cathode is an Al electrode, and the cathode operates under a vacuum degree lower than 10. -4 Prepared by deposition in a high-vacuum cavity.

[0038] Beneficial effects: The deposition of cathodes is simpler and more practical, and it avoids the impact of water and oxygen in the air on the performance of the device. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the structure of an organic-inorganic quantum dot hybrid infrared up-conversion device and a diagram of the organic molecule structure, according to an embodiment of the present invention.

[0040] Figure 2 Absorption spectrum of the material in the infrared organic detector layer of an organic-inorganic quantum dot hybrid infrared upconversion device;

[0041] Figure 3 Energy level diagram of an organic-inorganic quantum dot hybrid infrared upconversion device;

[0042] Figure 4For PEDOT:PSS, MoO3, NiO X Current density-voltage plots of devices with three different intermediate layers under unilluminated and illuminated conditions;

[0043] Figure 5 For PEDOT:PSS, MoO3, NiO X Brightness curves of three different intermediate layers under illumination and with illumination, as a function of voltage;

[0044] Figure 6 For NiO based on different concentrations X Current density-voltage plots of devices in the intermediate layer under unilluminated and illuminated conditions;

[0045] Figure 7 For NiO based on different concentrations X The brightness of the intermediate layer device as a function of voltage under both illumination and no illumination.

[0046] Figure 8 The test process and imaging of the organic-inorganic quantum dot hybrid infrared up-conversion device under illumination are shown in the figure. Detailed Implementation

[0047] The following detailed description illustrates the specific implementation method:

[0048] Example

[0049] An organic-inorganic quantum dot hybrid infrared up-conversion device, the basic structure of which is as follows: Figure 1 , Figure 2 As shown, it includes an organic infrared detector, an intermediate connecting layer, and an inorganic quantum dot light-emitting diode;

[0050] The organic infrared detector comprises, in sequence, an anode substrate, a hole-blocking layer, and an infrared organic layer; the hole-blocking layer is a ZnO layer, prepared by spin-coating a ZnO solution; the infrared organic layer consists of a donor DPP-DTT and an acceptor PC. 71 The mixture of BM at a predetermined volume ratio was prepared by spin coating. The donor DPP-DTT and the acceptor PC were used in the preparation. 71 The volume ratio of BM is 1:1.

[0051] The intermediate connecting layer is disposed above the infrared organic layer, and the intermediate connecting layer is NiO. X Layer, through NiO X The NiO was prepared by solution spin coating. X The concentration range of the solution is 16 mg / ml-30 mg / ml. In this example, NiO... X The optimal concentration of the solution is 25 mg / ml.

[0052] The inorganic quantum dot light-emitting diode is disposed above the intermediate connecting layer and sequentially includes a hole transport layer, an inorganic quantum dot light-emitting layer, an electron transport layer, and a cathode. The hole transport layer is made of any one of PVK, poly-TPD, or TFB. In this embodiment, PVK is selected to prepare the hole transport layer, which has a deep HOMO (highest molecular occupied orbital) and a high LOMO (lowest molecular unoccupied orbital), resulting in a low hole injection barrier between the hole transport layer and the quantum dot light-emitting layer, and effectively confining electrons within the light-emitting layer. The inorganic quantum dot light-emitting layer can be made of conventional inorganic materials, such as a CdSe / ZnS quantum dot film. It is also prepared by solution spin-coating. Both the electron transport layer and the hole blocking layer are made of ZnO and are prepared by ZnO solution spin-coating. The cathode is a metallic Al electrode, and the cathode is prepared under a vacuum degree below 10... -4 Prepared by deposition in a high-vacuum cavity.

[0053] A method for preparing an organic-inorganic quantum dot hybrid infrared up-conversion device specifically includes the following steps:

[0054] S1. A material solution for preparing the infrared organic layer and the intermediate connecting layer, wherein the material solution for the infrared organic layer includes a DPP-DTT solution and PC. 71 BM solution; the material solution of the intermediate connecting layer includes NiO. x Solution;

[0055] S101. At room temperature, mix DPP-DTT solution and PC of the same concentration. 71 The BM solutions were mixed at a 1:1 volume ratio and stirred for 12 hours to obtain the DPP-DTT:PC mixture of this scheme. 71 BM infrared organic layer solution;

[0056] S102, Prepare NiO with different concentrations x The aqueous solution was sonicated in an ultrasonic bath for 10 minutes and then filtered to obtain the intermediate layer solution of this scheme.

[0057] S2. Perform standardized cleaning, drying, and UV ozone treatment on the prepared anode substrate;

[0058] S201. The cathode substrate is cleaned in sequence with detergent, deionized water, ethanol, acetone and isopropanol;

[0059] S202. Place the cleaned cathode substrate into a drying oven to dry it.

[0060] S203. Perform ultraviolet ozone treatment on the dried cathode substrate for 5 minutes.

[0061] S3. On the treated anode substrate, a hole blocking layer, an infrared organic layer, an intermediate connecting layer, a hole transport layer, an inorganic quantum dot luminescent layer, and an electron transport layer are sequentially prepared using solution spin coating and annealing at different temperatures. Finally, a cathode is prepared using vacuum thermal deposition technology. The cathode material is a metallic Al electrode, and the cathode is deposited under a vacuum degree lower than 10. -4 Prepared by deposition in a high-vacuum cavity.

[0062] S301. The prepared anode substrate is placed in a glove box filled with nitrogen (water and oxygen content <0.1ppm), placed on a spin coater, and a ZnO solution dissolved in ethanol is spin-coated at a speed of 600r / min. The substrate is then annealed at 120℃ for 20min to prepare a hole blocking layer.

[0063] S302, the infrared organic layer is made of DPP-DTT:PC71BM with a volume ratio of 1:1, statically spin-coated at a speed of 1500 r / min, and annealed at 110℃ for 10 min;

[0064] S303, the intermediate connecting layer uses NiOx solution, and adopts a two-step method: first, dynamic spin coating at a speed of 1200 r / min, then spin coating at a speed of 3000 r / min, and annealing at 110℃ for 10 min;

[0065] S304, the hole transport layer was prepared by static spin coating of PVK solution at a speed of 2500 r / min and annealing at 120℃ for 20 min;

[0066] S305, the quantum dot light-emitting layer is made by static spin coating with a solution containing CdSe / ZnS at a speed of 2500 r / min and annealing at 110℃ for 30 min;

[0067] S306, the electron transport layer is made of ZnO solution, spin-coated at a speed of 2000 r / min, and annealed at 120℃ for 20 min;

[0068] S307. Transfer the processed device to a vacuum thermal evaporation system connected to the glove box, mount it on a mask, and grow a cathode-Al electrode using thermal deposition in a high-vacuum chamber under high-vacuum conditions with a pressure below 1×10⁻⁴ Pa (growth rate approximately...). The cathode has a thickness of 100 nm.

[0069] S4. The prepared device is packaged in a glove box and then removed from the glove box for performance testing. Detailed implementation method:

[0071] Organic infrared detection units generate photoexcitons under incident infrared light irradiation, which are then separated to form electrons and holes (charge carriers), exhibiting good photo-to-electric conversion capabilities. For example, Figure 3 As shown, the intermediate connecting layer NiO X With suitable energy levels, it can be well matched with organic infrared detection units and form a small energy level difference with the photosensitive layer. Therefore, under illumination, it can effectively extract corresponding charge carriers from the detection unit and enter the quantum dot light-emitting diode via Auger recombination for further recombination and luminescence, effectively reducing the turn-on voltage. Additionally, NiO... X The potential barrier between NiO and PVK is relatively high in the dark state. X As an intermediate layer, it can effectively block minority carriers from jumping over high-energy-level barriers, thus exhibiting a high window voltage and ultra-high contrast. Inorganic quantum dot light-emitting diodes possess extremely high electro-optical conversion efficiency and excellent luminous quality, especially when the intermediate connecting layer NiO... X After effectively extracting the corresponding charge carriers from the detection unit and injecting them into the quantum light-emitting diode, the entire upconversion device exhibits excellent performance.

[0072] This scheme combines an organic detector, an inorganic quantum dot light-emitting diode, and their intermediate connecting layer, achieving the advantages of both all-inorganic and all-organic infrared up-conversion devices while avoiding their disadvantages. Furthermore, it can be fabricated using an all-solution method, resulting in low cost and a simple fabrication process. It can also be used in flexible devices, showing broad application prospects.

[0073] Compared to the intermediate interconnect layer PEDOT:PSS in existing infrared up-conversion devices, NiO x As an intermediate connecting layer, it only needs to be a few nanometers thick, introducing fewer water molecules and thus having little impact on the underlying organic layer. Meanwhile, NiO... x It can be effectively deposited on the organic layer, forming a good heterogeneous interface with the organic layer, laying a good foundation for the subsequent deposition of the organic hole transport layer, and playing a key role in the final structural quality of the infrared up-conversion device. Moreover, compared with PEDOT:PSS and MoO3, NiO... x The energy level barrier between the NiO and adjacent organic hole transport layers is relatively large. In the dark state, it is difficult for holes to be injected into the emissive layer through this interface. Therefore, the device can only emit visible light at a relatively high driving voltage. However, under infrared light illumination, due to the high energy barrier of NiO, the visible light emission is significantly reduced. x It has a high hole mobility, can quickly extract holes from the infrared organic layer, and recombine with electrons in the luminescent layer to emit light through Auger recombination.

[0074] To demonstrate the effectiveness of the intermediate bonding layer, relevant experiments were conducted, employing a single-variable principle, i.e., controlling the spin-coating thickness of the intermediate bonding layer to be the same, only varying the material type. The experiments were mainly divided into three groups: the first group used PEDOT:PSS, and the second group used NiO as described in this scheme. x The third group is MoO3. For example... Figure 4 As shown, this demonstrates the application of PEDOT:PSS, MoO3, and NiO. X Current density-voltage relationships for devices with three different intermediate layers under illumination and without illumination. Under illumination, the current density at the same voltage, from largest to smallest, is based on NiO. X Devices containing PEDOT:PSS and MoO3 indicate that NiO X More holes are extracted from the light-absorbing layer, resulting in more holes available for recombination luminescence. This is because NiO X It exhibits higher mobility and a good heterogeneous interface with the upper and lower layers; and without illumination, the current density of the PEDOT:PSS device is slightly higher than that of NiO. X The current density in the corresponding device is mainly because, in the dark state, due to the presence of the blocking layer, there are very few electrically injected holes. Hole propagation then primarily depends on the energy level difference. The energy level difference between PEDOT:PSS and PVK is relatively small, therefore the turn-on voltage of the PEDOT:PSS device is lower in the dark state, which is consistent with the brightness versus voltage curve. Figure 5 As shown, this demonstrates the application of PEDOT:PSS, MoO3, and NiO. X The brightness of devices with three different intermediate layers varies with voltage under illumination and without illumination. Compared with devices based on PEDOT:PSS and MoO3, devices based on NiOx can only emit visible light under dark conditions (without illumination, corresponding to curve W / O NIR) with a relatively large driving voltage. However, under infrared illumination (with illumination, corresponding to curve W NIR), the corresponding turn-on voltage is the lowest, around 1.6V, which is the lowest value reported among solution-processed infrared up-conversion devices to date.

[0075] To verify NiO x The effect of solution concentration on device performance was investigated by setting up four groups of NiO concentrations. x The solution was prepared, and related experiments were conducted. For example... Figure 6 As shown, this illustrates NiO based on different concentrations. X Current density-voltage plots of the intermediate layer device under illumination and without illumination; it can be seen that when NiO x The difference in current density is greatest when the solution concentration is 25 mg / ml, under illumination and without illumination. For example... Figure 7 As shown, this illustrates NiO based on different concentrations. XThe brightness curves of the intermediate layer device under illumination and without illumination as a function of voltage are shown in the figure. It can be seen from the figure that in NiO... x At a solution concentration of 25 mg / ml, under the same voltage conditions, the difference in brightness between illuminated and unilluminated conditions was the highest, with the highest brightness reaching 6274 cd / m² under illumination. To further demonstrate the superior performance of the device, we conducted near-infrared imaging tests using a camera. By adjusting the positions of the near-infrared light source, the mask, and the device, we ensured that the near-infrared light passed perpendicularly onto the device through the mask. Figure 8 As shown, clear imaging can be obtained. Finally, by changing different patterns and letters, images with clear brightness and darkness were obtained under different radiation intensities, demonstrating that NiO... X The up-conversion device, as an intermediate layer, has excellent resolution and contrast.

[0076] In summary, the overall device designed based on this scheme has high sensitivity to infrared light and low driving voltage. After testing, it was found that the minimum turn-on voltage is 1.6V, the luminous performance is excellent, the maximum brightness reaches 6274cd / m^2, and the contrast ratio is as high as 48800, which is one of the best infrared up-conversion devices reported to date.

[0077] The above descriptions are merely embodiments of the present invention. Commonly known structures and characteristics of the solutions will not be described in detail here. Those skilled in the art are aware of all common technical knowledge in the field prior to the application date or priority date, are aware of all existing technologies in that field, and have the ability to apply conventional experimental methods prior to that date. Those skilled in the art can, under the guidance of this application, improve and implement this solution in combination with their own capabilities. Some typical known structures or methods should not be obstacles for those skilled in the art to implement this application. It should be noted that those skilled in the art can make several modifications and improvements without departing from the structure of the present invention. These should also be considered within the scope of protection of the present invention, and will not affect the effectiveness of the implementation of the present invention or the practicality of the patent. The scope of protection claimed in this application should be determined by the content of its claims, and the specific embodiments described in the specification can be used to interpret the content of the claims.

Claims

1. An organic-inorganic quantum dot hybrid infrared upconversion device, characterized in that: The organic infrared detector, the intermediate connecting layer and the inorganic quantum dot light emitting diode are included. The organic infrared detector sequentially includes an anode substrate, a hole blocking layer and an infrared organic layer. The intermediate connecting layer is arranged above the infrared organic layer, and a material of the intermediate connecting layer is NiO X ; The inorganic quantum dot light emitting diode is arranged above the intermediate connecting layer and sequentially includes a hole transport layer, an inorganic quantum dot light emitting layer, an electron transport layer and a cathode. 2.The organic-inorganic quantum dot hybrid infrared up-conversion device of claim 1, wherein: The intermediate connection layer uses NiO with a concentration of 16 mg / ml-30 mg / ml X The solution is prepared. 3.The organic-inorganic quantum dot hybrid infrared up-conversion device of claim 1, wherein: The infrared organic layer is a donor DPP-DTT and an acceptor PC 71 The BM is a mixed material layer prepared by mixing in a set volume ratio.

4. The organic-inorganic quantum dot hybrid infrared upconversion device according to claim 3, wherein: The donor DPP-DTT and the acceptor PC 71 The volume ratio of BM was 1:

1.

5. The organic-inorganic quantum dot hybrid infrared upconversion device according to claim 1, wherein: The material of the hole transport layer is any one of PVK, poly-TPD and TFB. 6.The organic-inorganic quantum dot hybrid infrared up-conversion device and the preparation method according to claim 1, characterized in that: The materials of the hole blocking layer and the electron transport layer are both ZnO.

7. A method for preparing an organic-inorganic quantum dot hybrid infrared up-conversion device, characterized in that, The method comprises the following steps: S1, equipped with infrared organic layer solution and intermediate connecting layer solution, the material solution of the infrared organic layer includes DPP-DTT solution and PC 71 BM solution; the material solution of the intermediate connecting layer includes NiO x solution; S2, standardizing cleaning, drying and UV ozone treatment are performed on the prepared anode substrate; S3, a hole blocking layer, an infrared organic layer, an intermediate connecting layer, a hole transport layer, an inorganic quantum dot light emitting layer and an electron transport layer are sequentially prepared on the treated anode substrate by a solution spin coating technology, and finally a cathode is prepared by a vacuum thermal deposition technology. wherein the intermediate connection layer is through NiO X Solution preparation.

8. The method of claim 7, wherein the method further comprises: The NiO X The concentration of the solution is 16 mg / ml - 30 mg / ml.

9. The method of claim 7, wherein the method further comprises: The infrared organic layer is a donor DPP-DTT and an acceptor PC 71 The mixed solution was prepared by mixing BM in a set volume ratio.

10. The method of claim 9, wherein the method further comprises: The donor DPP-DTT and the acceptor PC 71 The volume ratio of BM was 1:1.

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