Substrate heat treatment apparatus using a vertical cavity surface emitting laser

Abstract

The present invention discloses a substrate heat treatment apparatus using a vertical cavity surface emitting laser (VCSEL) device. The present invention includes: a process chamber for placing a flat substrate to be heat treated; and an irradiation module including a device arrangement plate and sub-irradiation modules for irradiating a laser beam onto the flat substrate. The sub-irradiation modules are placed on the upper surface of the device arrangement plate. The sub-irradiation modules have a device region and a terminal region. The device region is used for installing vertical cavity surface emitting laser devices, and the terminal region is used for installing electrode terminals and is located in front of or behind the device region. In the irradiation module, the device region and the terminal region are arranged along the x-axis direction respectively, and the device region and the terminal region are alternately arranged along the y-axis direction perpendicular to the x-axis direction.

Description

Technical Field

[0001] The present invention relates to a substrate heat treatment apparatus using a vertical cavity surface emitting laser for heat treating a flat substrate such as a semiconductor wafer or a glass substrate by heating the flat substrate using laser light irradiated from a vertical cavity surface emitting laser (VCSEL). Background Art

[0002] A flat panel display device can be manufactured through preparation processes such as a silicon thin film crystallization process, an ion implantation process, and an activation process after depositing a low-temperature polysilicon thin film on a flat substrate such as a glass substrate.

[0003] The above activation process can be performed after the ion implantation process through the source / drain regions of a transistor to repair damage to the flat substrate caused by ion implantation and to impart electrical activation. The above activation process can improve the activation heat treatment efficiency. During the high-temperature activation process, in order to prevent an increase in the junction depth due to diffusion, the flat substrate is processed by a rapid heat treatment process of extremely rapid heating and cooling.

[0004] The above rapid heat treatment process can use rapid thermal processing (RTP) and perform heat treatment for several seconds at a temperature of 1000 to 1200 °C using a halogen lamp. Further, the above rapid heat treatment process can use a xenon flash lamp to reduce the heat treatment time to the range of milliseconds (msec) to microseconds (usec), and methods of irradiating in the range of microseconds to milliseconds (flash lamp annealing, FLA) and irradiating laser (laser spike annealing, LSA) can be used.

[0005] On the other hand, recently, a heat treatment process using a Vertical Cavity Surface Emitting Laser (VCSEL) device to heat a semiconductor wafer has been developed. The above heat treatment process is as follows: an irradiation module that irradiates a laser beam by arranging a plurality of vertical cavity surface emitting laser devices in a manner that covers a large area is used to uniformly irradiate the laser beam onto the semiconductor wafer for heat treatment. The above vertical cavity surface emitting laser device can emit a laser beam at a micro-emitter. The above irradiation module can use the divergence angle of the laser beam emitted from the vertical cavity surface emitting laser device and uniformly heat the semiconductor wafer through partial overlapping of the laser beams emitted from adjacent vertical cavity surface emitting laser devices. The above irradiation module can be configured to include a sub-irradiation module including a plurality of vertical cavity surface emitting laser devices, and a plurality of sub-irradiation modules are arranged to cover the entire area of the semiconductor wafer.

[0006] Recently, with the miniaturization of semiconductor technology, the above heat treatment process needs to satisfy less temperature deviation and higher temperature uniformity. However, due to various limitations, the currently used heat treatment apparatus has a problem in that it is difficult to achieve the required temperature uniformity. Summary of the Invention

[0007] Technical Problem

[0008] An object of the present invention is to provide a heat treatment apparatus that can reduce the temperature deviation of a flat substrate during heat treatment and increase the temperature uniformity.

[0009] Furthermore, an object of the present invention is to provide a heat treatment apparatus that can extend the life of a device module by effectively cooling the heat in the device module.

[0010] Technical Solution

[0011] The substrate heat treatment apparatus using a vertical cavity surface emitting laser according to the present invention is characterized in that it includes: a process chamber for placing a flat substrate to be heat-treated; and an irradiation module including a device arrangement plate and a sub-irradiation module for irradiating a laser beam onto the above flat substrate. The above sub-irradiation module is placed on the upper surface of the above device arrangement plate. The above sub-irradiation module has a device region and a terminal region. The above device region is used to install a vertical cavity surface emitting laser device, and the above terminal region is used to install an electrode terminal and is located in front of or behind the above device region. In the above irradiation module, the above device region and the terminal region are respectively arranged along the x-axis direction, and the above device region and the terminal region are alternately arranged along the y-axis direction perpendicular to the above x-axis direction.

[0012] Further, in the above-described sub-irradiation module, the device region may be in a quadrilateral shape, the terminal region is formed to protrude on the other side of the front end and one side of the rear end of the device region, and in the irradiation module, the device region and the terminal region are continuously arranged along the x-axis direction, and the device region and the terminal region are alternately arranged along the y-axis direction.

[0013] Further, in the above-described sub-irradiation module, the device region may be in a quadrilateral shape, the terminal region is formed to cover the entire width at the front end of the device region, and in the irradiation module, the device region and the terminal region are continuously arranged along the x-axis direction, and the device region and the terminal region are alternately arranged along the y-axis direction.

[0014] Further, the above-described sub-irradiation module may be in a quadrilateral shape, the terminal region forms a rectangular shape with a specified length and a width equivalent to cutting the entire width on the other side of the front end and one side of the rear end of the quadrilateral shape, the device region is formed in a region other than the terminal region, and the irradiation module has a region where the device region and the terminal region are alternately arranged and a region where only the device region is arranged along the x-axis direction, and the device region and the terminal region are alternately arranged along the y-axis direction.

[0015] Further, the above-described sub-irradiation module can be formed in a manner that each independently receives power.

[0016] Further, the above-described sub-irradiation module may include: a device substrate for mounting the vertical cavity surface emitting laser device and the electrode terminal; and a cooling block combined with the lower part of the device substrate for cooling the device substrate and the vertical cavity surface emitting laser device, and the cooling block is formed with a cooling flow path inside for the cooling water to flow through.

[0017] Further, the above-described process chamber may include: an outer shell; an inner shell formed inside the outer shell at a height lower than that of the outer shell; a light beam transmission plate located above the inner shell; and a lower plate combined with the lower parts of the outer shell and the inner shell. The process chamber has an upper accommodation space and a lower accommodation space. The upper accommodation space is formed between the inner side of the outer shell and the upper part of the inner shell, providing a space for placing the flat substrate. The lower accommodation space is formed between the outer side surface of the inner shell and the inner side surface of the outer shell. The irradiation module is located below the light beam transmission plate and irradiates the lower surface of the flat substrate with the laser beam.

[0018] Furthermore, the above process chamber may further include a substrate support for supporting the outer side of the above flat substrate and extending into the above lower accommodation space. The above substrate heat treatment device may further include a substrate rotation module, which is composed of an inner rotation unit and an outer rotation unit. The inner rotation unit is in the form of a ring with N poles and S poles alternately formed along the circumferential direction, and is combined with the lower part of the substrate support inside the above lower accommodation space. The above outer rotation unit is placed outside the above outer shell in a manner facing the above inner rotation unit, and rotates the above inner rotation unit by generating a magnetic force.

[0019] Furthermore, the above substrate heat treatment device may further include a substrate rotation module for supporting and rotating the above flat substrate.

[0020] Furthermore, the above irradiation module can be formed in such a way that the above device area is located at the center of the above flat substrate.

[0021] Furthermore, the above irradiation module can be formed in such a way that the above terminal area is located at the center of the above flat substrate.

[0022] Effects of the Invention

[0023] The substrate heat treatment device using a vertical cavity surface emitting laser according to the present invention can have the following effects. That is, by optimizing the configuration of the sub-irradiation module, a laser beam is uniformly irradiated on the flat substrate, thereby reducing the temperature deviation of the flat substrate and increasing the temperature uniformity.

[0024] Furthermore, the substrate heat treatment device using a vertical cavity surface emitting laser according to the present invention can have the following effects. That is, by rotating the flat substrate to uniformly irradiate the laser beam on the flat substrate, thereby reducing the temperature deviation of the flat substrate and increasing the temperature uniformity.

[0025] Furthermore, the substrate heat treatment device using a vertical cavity surface emitting laser according to the present invention independently applies power to each sub-irradiation module, thereby increasing the uniformity of the light energy source based on the irradiated laser beam.

[0026] Furthermore, the substrate heat treatment device using a vertical cavity surface emitting laser according to the present invention has the following effects. That is, by independently controlling the power applied to the sub-irradiation module, the temperature uniformity of the flat substrate is further improved.

[0027] Furthermore, the substrate heat treatment device using a vertical cavity surface emitting laser according to the present invention forms a transparent window at the upper or lower part of the process chamber for heat-treating the flat substrate, and arranges the irradiation module outside the process chamber, thereby separating the inside of the process chamber and the heating light source, and facilitating the control of the vacuum atmosphere inside the process chamber. Brief Description of the Drawings

[0028] Figure 1 Structural diagram of a substrate heat treatment apparatus using a vertical cavity surface emitting laser according to an embodiment of the present invention.

[0029] Figure 2 Is Figure 1 Partial perspective view of the irradiation module.

[0030] Figure 3 Is related to Figure 2 Vertical cross-sectional view related to A-A of

[0031] Figure 4 Perspective view of the irradiation module according to another embodiment of the present invention.

[0032] Figure 5 Perspective view of the irradiation module according to another embodiment of the present invention.

[0033] Figure 6a And Figure 6b Are the top views of the irradiation module installed in the flat substrate heat treatment apparatus according to an embodiment of the present invention Figure 2 of

[0034] Figure 7 Is the evaluation result of the heat flux in the axial direction when the flat substrate stops in the substrate heat treatment apparatus of Figure 6a and Figure 6b

[0035] Figure 8 Is the evaluation result of the heat flux when the flat substrate rotates in the substrate heat treatment apparatus of Figure 6a and Figure 6b

[0036] Figure 9 Is the evaluation result of the temperature distribution based on the rotation speed of the flat substrate in the substrate heat treatment apparatus of Figure 6a

[0037] Figure 10 Is the evaluation result of the temperature distribution based on the rotation speed of the flat substrate in the substrate heat treatment apparatus of Figure 6b

[0038] Figure 11 Top view of the irradiation module installed in the flat substrate heat treatment apparatus of the comparative example.

[0039] Figure 12 Is the evaluation result of the heat flux in the axial direction when the flat substrate stops in the substrate heat treatment apparatus of Figure 11

[0040] Figure 13 ​​​​​Evaluation results of the heat flux based on the axial direction when the flat substrate rotates in the substrate heat treatment apparatus provided with the irradiation module of the comparative example.

[0041] Best mode

[0042] Hereinafter, through examples and drawings, the substrate heat treatment apparatus using a vertical cavity surface emitting laser of the present invention will be described in detail.

[0043] First, the structure of the substrate heat treatment apparatus using a vertical cavity surface emitting laser according to an embodiment of the present invention will be described.

[0044] Figure 1 It is a structural diagram of the heat treatment apparatus using a vertical cavity surface emitting laser according to an embodiment of the present invention. Figure 2 Is Figure 1 Partial perspective view of the irradiation module of. Figure 3 Is related to Figure 2 Vertical sectional view related to A-A of.

[0045] Referring to Figures 1 to 3 A substrate heat treatment apparatus 10 using a vertical cavity surface emitting laser according to an embodiment of the present invention may include a process chamber 100 and an irradiation module 200. Further, the substrate heat treatment apparatus 10 may further include a substrate rotation module 300.

[0046] In the substrate heat treatment apparatus 10, preparation processes such as a silicon thin film crystallization process, an ion implantation process, or an activation process for the flat substrate a can be performed.

[0047] In the substrate heat treatment apparatus 10, a laser beam generated from the irradiation module 200 including a vertical cavity surface emitting laser device can be irradiated onto the flat substrate a to heat the flat substrate a. Among them, the flat substrate a may be a semiconductor wafer or a glass substrate. Further, the flat substrate a may be a flexible substrate such as a resin film. Further, the flat substrate a may include various devices or conductive patterns formed on the surface or inside.

[0048] The process chamber 100 may include an outer shell 110, an inner shell 120, a beam transmission plate 130, a lower plate 140, and a substrate support 150. The process chamber 100 can provide a space for accommodating the flat substrate a therein and performing heat treatment. The flat substrate a can be supported by the substrate support 150 inside the process chamber 100. The process chamber 100 allows the laser beam generated in the irradiation module 200 located outside to be irradiated inside. That is, the process chamber 100 may be provided with a beam irradiation window that transmits the laser beam below the substrate support 150. On the other hand, in the process chamber 100, a beam irradiation window may be provided above the substrate support 150.

[0049] On the other hand, referring to Figure 1 , in the above-mentioned process chamber 100, although not specifically illustrated, a variety of process units required for the heat treatment process can also be provided in the upper part. For example, a sputtering unit can be provided in the upper part of the above-mentioned process chamber 100.

[0050] The above-mentioned outer shell 110 can be formed in a hollow cylindrical shape and can be formed in a cylindrical shape or a square cylindrical shape. The above-mentioned outer shell 110 can be formed in a shape with a horizontal cross-sectional area larger than that of the flat substrate a heat-treated inside.

[0051] On the other hand, the above-mentioned outer shell 110 can be formed in a structure that expands outward at a specified height according to the heat treatment process and the size of the flat substrate a, etc. And although the upper structure of the above-mentioned outer shell 110 is not specifically illustrated, it can be formed in a variety of shapes to accommodate or support the process units located above.

[0052] The above-mentioned inner shell 120 can be formed in a hollow cylindrical shape and can be formed in a cylindrical shape, a square cylindrical shape, a pentagonal cylindrical shape or a hexagonal cylindrical shape. The outer diameter or the outer width of the above-mentioned inner shell 120 can be smaller than the inner diameter or the inner width of the outer shell 110. And the above-mentioned inner shell 120 can be formed with a height lower than that of the outer shell 110. And the above-mentioned inner shell 120 can be formed at a height where the upper side is located below the flat substrate a placed inside the process chamber 100. And the diameter or the width of the above-mentioned inner shell 120 can be larger than the diameter or the width of the flat substrate a located above. And the horizontal area of the above-mentioned inner shell 120 can be larger than the horizontal area of the flat substrate a. Therefore, an upper accommodation space 100a for placing the flat substrate a can be formed in the upper part of the above-mentioned inner shell 120. That is, the above-mentioned upper accommodation space 100a is formed in the upper part of the inner shell 120 inside the outer shell 110 and will provide a space for placing the flat substrate a.

[0053] And, when viewed from the lower part of the lower shell, the above-mentioned flat substrate a can be located in the upper accommodation space 100a in a manner that exposes the entire area. And the above-mentioned inner shell 120 can be combined so that the lower side is located at approximately the same height as the lower side of the outer shell 110. A lower accommodation space 100b can be formed between the outer side surface of the above-mentioned inner shell 120 and the inner side surface of the outer shell 110. The above-mentioned upper accommodation space 100a and the lower accommodation space 100b can be externally shielded and maintained in a vacuum or a process gas atmosphere through the outer shell 110, the inner shell 120 and the lower plate 140.

[0054] The above-mentioned light beam transmission plate 130 can be combined with the upper part of the lower housing and can be located below the flat substrate a. The above-mentioned light beam transmission plate 130 can be formed of a transparent plate such as quartz or glass that can transmit a laser beam. The above-mentioned light beam transmission plate 130 transmits the laser beam to irradiate the lower surface of the flat substrate a. More specifically, the above-mentioned light beam transmission plate 130 irradiates the lower surface of the flat substrate a with the laser beam incident through the lower surface inside the lower housing. The area of the above-mentioned light beam transmission plate 130 can be larger than the area of the flat substrate a. For example, in the above-mentioned light beam transmission plate 130, the diameter or width can be larger than the diameter or width of the flat substrate a. Preferably, compared with the diameter or width of the flat substrate a, the above-mentioned light beam transmission plate 130 can be formed with a diameter or width of 1.1 times or more. In this case, the above-mentioned light beam transmission plate 130 can irradiate the entire lower surface of the flat substrate a with the laser beam.

[0055] On the other hand, the above-mentioned light beam transmission plate 130 can be formed on the upper part of the process chamber 100. For example, it can be formed on the upper part of the outer housing 110 so that the laser beam incident through the upper surface from the upper part of the outer housing 110 irradiates the upper surface of the flat substrate a.

[0056] The above-mentioned lower plate 140 can be combined with the lower sides of the outer housing 110 and the inner housing 120 and can enclose the lower part of the space between the outer housing 110 and the inner housing 120. That is, the above-mentioned lower plate 140 can enclose the lower part of the lower accommodation space 100b. The above-mentioned lower plate 140 can be in the shape of a circular ring or a square with a specified width. The above-mentioned lower plate 140 can be formed into various shapes according to the lower plane shape of the lower accommodation space 100b.

[0057] The above-mentioned substrate support 150 can include an upper support 151 and a connection support 152. The above-mentioned substrate support 150 can be located above the lower housing and can support the outer side of the lower part of the flat substrate a in a manner that exposes the lower surface of the flat substrate a. Also, the above-mentioned substrate support 150 can extend into the lower accommodation space 100b to be combined with the substrate rotation module 300. The above-mentioned substrate support 150 can rotate the flat substrate a through the action of the substrate rotation module 300.

[0058] The above-mentioned upper support 151 can be provided with a substrate exposure hole 151a on the inside and can be formed into an annular shape with a specified width. The above-mentioned upper support 151 can expose the lower surface of the flat substrate a and support the outer side of the lower part of the flat substrate a. The diameter or width of the above-mentioned upper support 151 can be larger than the diameter or width of the flat substrate a.

[0059] The above substrate exposure hole 151a may penetrate the upper and lower surfaces at the center of the upper support 151 to be formed. The substrate exposure hole 151a may be formed with a specified area to entirely expose the area of the lower surface of the flat substrate a that needs to be heat-treated. The substrate exposure hole 151a may be formed with a substrate support table 151b to stably support the flat substrate a at the upper end.

[0060] The above connection support 152 may be generally formed in a cylindrical shape with upper and lower openings, and may be formed in a shape corresponding to the shape of the inner shell 120. For example, when the inner shell 120 is formed in a cylindrical shape, correspondingly, the above lower support is formed in a cylindrical shape. The connection support 152 may span the upper accommodation space 100a and the lower accommodation space 100b. In the connection support 152, the upper part may be combined with the outer side of the upper support 151, and the lower part extends to the lower accommodation space 100b to be combined with the substrate rotation module 300. Therefore, the above connection support 152 rotates through the substrate rotation module 300 to rotate the upper support 151 and the flat substrate a.

[0061] The above irradiation module 200 may include a device arrangement plate 210 and sub-irradiation modules 220. The irradiation module 200 may be located outside the process chamber 100, and may irradiate a laser beam onto the surface of the transparent substrate through the beam transmission plate 130. The irradiation module 200 may be located below or above the process chamber 100 according to the positions of the beam transmission plate 130 formed in the process chamber 100 and the transparent substrate. For example, the above irradiation module 200 may be located below the beam transmission plate 130 inside the inner shell 120. Therefore, the above irradiation module 200 may be located below the beam transmission plate 130 outside the process chamber 100, thereby irradiating the laser beam onto the lower surface of the flat substrate a.

[0062] In the above irradiation module 200, a plurality of sub-irradiation modules 220 may be arranged in a grid pattern on the upper surface of the device arrangement plate 210. Refer to Figure 2 , in the above sub-irradiation module 220, they may be arranged along the x-direction and the y-direction on the upper surface of the device arrangement plate 210, thereby being arranged in a grid pattern. Hereinafter, one side and the other side or one end and the other end are used to represent the x-direction, and the front side and the rear side or the front end and the rear end are used to represent the y-direction. And the width or the width direction is used to represent the x-direction, and the length or the length direction is used to represent the y-direction.

[0063] The above device arrangement plate 210 may be formed in a plate shape with a specified area and thickness. Preferably, the above device arrangement plate 210 corresponds to the shape and area of the flat substrate a. The device arrangement plate 210 may be formed of a ceramic material or a metal material having heat conductivity. The device arrangement plate 210 may function to dissipate the heat generated by the vertical cavity surface emitting laser devices.

[0064] The above-mentioned sub-irradiation module 220 may include a device substrate 221, a vertical cavity surface emitting laser device 222, electrode terminals 223, and a cooling block 224. The above-mentioned sub-irradiation module 220 may be formed by arranging a plurality of device arrangement plates 210 along the lattice direction. The above-mentioned sub-irradiation module 220 may be in a region required for irradiating a laser beam on the surface of the device arrangement plate 210 toward the flat substrate a. The above-mentioned device substrate 221 may be combined with the cooling block 224 through a separate adhesive layer 226.

[0065] In the above-mentioned sub-irradiation module 220, a plurality of vertical cavity surface emitting laser devices 222 are arranged along the x-axis direction and the y-axis direction. Although not specifically illustrated, the above-mentioned sub-irradiation module 220 may be provided with a light-emitting frame (not illustrated) for fixing the vertical cavity surface emitting laser device 222 and a power line (not illustrated) for supplying power to the vertical cavity surface emitting laser device 222. The above-mentioned sub-irradiation module 220 may apply the same power to all the vertical cavity surface emitting laser devices 222. And, the above-mentioned sub-irradiation module 220 may apply different powers to each of the vertical cavity surface emitting laser devices 222.

[0066] The above-mentioned sub-irradiation module 220 may have a device region 221a for mounting the vertical cavity surface emitting laser device 222 and a terminal region 221b for mounting the electrode terminals 223. The above-mentioned device region 221a may be in a quadrilateral shape, and the terminal region may protrude and be formed on the other side of the front end and one side of the rear end of the device region 221a. The above-mentioned terminal region may be formed in a half region in the other direction of the front end of the device region 221a and a half region in one direction of the rear end of the device region 221a. That is, the width of the above-mentioned terminal region is equivalent to the width of cutting the width of the device region 221a. And, in the above-mentioned sub-irradiation module 220, one side and the other side may be in a straight line shape. The length of the above-mentioned terminal region may be less than the length of the device region 221a. The length of the above-mentioned sub-irradiation module 220 is about 30 mm, the length of the terminal region is as short as possible, about 10 mm, and preferably within 7 mm. The above-mentioned terminal regions can be formed with the same length on the front side and the rear side.

[0067] In the above-mentioned sub-irradiation module 220, when arranged along the y-axis direction, the terminal region located on the other side of the front end and the terminal region located on one side of the rear end of the adjacent sub-irradiation module 220 may be adjacent along the x-axis direction. In the above-mentioned sub-irradiation module 220, the device region 221a and the terminal region may be linearly arranged along the x-axis direction respectively, and the device region 221a and the terminal region may be alternately arranged along the y-axis direction. The above-mentioned sub-irradiation module 220 may be configured to have the minimum pitch between the sub-irradiation modules 220 adjacent along the y-axis and x-axis directions. And, the above-mentioned sub-irradiation modules 220 may be arranged with a maximum pitch of 2 mm.

[0068] Therefore, in the above irradiation module 200, the device regions 221a and the terminal regions of the sub-irradiation module 220 can be continuously arranged in sequence along the x-axis direction, and the device regions 221a and the terminal regions can be alternately arranged along the y-axis direction.

[0069] The above device substrate 221 can be formed of a general substrate for mounting electronic devices. The above device substrate 221 can be divided into a device region 221a for mounting vertical cavity surface emitting laser devices 222 and a terminal region for mounting terminals 221b. In the above device region 221a, a plurality of vertical cavity surface emitting laser devices 222 are arranged and mounted in a lattice shape. The above terminal region 221b can be in contact with the device region 221a and a plurality of terminals can be mounted.

[0070] In the above device substrate 221, the device region 221a can be in a quadrilateral shape, and the terminal region 221b protrudes and is formed on the other side of the front end and one side of the rear end of the device region 221a. The above terminal region 221b can be formed in a half region in the other direction in the front end of the device region 221a and a half region in one direction in the rear end of the device region 221a. Also, one side and the other side of the above device substrate 221 can be in a linear shape.

[0071] The above vertical cavity surface emitting laser device 222 can be formed of a general vertical cavity surface emitting laser device 222 that irradiates a laser beam. For example, the above vertical cavity surface emitting laser device 222 can be formed of a device that oscillates surface-emitting laser light. The above vertical cavity surface emitting laser device 222 can be in a quadrilateral shape, and preferably, can be formed in a square or a rectangular shape with a ratio of width to length not exceeding 1:2. The above vertical cavity surface emitting laser device 222 can be prepared from a hexahedral chip and oscillates a high-power laser beam on one surface. The above vertical cavity surface emitting laser device 222 can oscillate a high-power laser beam, and therefore, compared with the existing halogen lamp, the temperature rise rate of the flat substrate a can be increased and the lifespan is relatively long.

[0072] A plurality of the above vertical cavity surface emitting laser devices 222 can be arranged along the x-direction and the y-direction in the device region 221a on the upper surface of the device substrate 221, and are arranged in a lattice shape. According to the area of the device region 221a and the energy amount of the laser beam irradiated onto the flat substrate a, the above vertical cavity surface emitting laser devices 222 are formed in an appropriate amount and at an appropriate interval. Also, the above vertical cavity surface emitting laser devices 222 can form an interval capable of irradiating uniform energy when the emitted laser beam overlaps with the laser beam of an adjacent vertical cavity surface emitting laser device 222. In this case, the above vertical cavity surface emitting laser device 222 and an adjacent vertical cavity surface emitting laser device 222 can be in contact with each other on the side surfaces without forming a separation distance.

[0073] A plurality of the above-described electrode terminals 223 may be formed in the terminal region 221b of the device substrate 221. The above-described electrode terminals 223 may include a + terminal and a - terminal and may be electrically connected to the vertical cavity surface emitting laser device 222. Although not specifically illustrated, the above-described electrode terminals 223 can be electrically connected to the vertical cavity surface emitting laser device 222 in various ways. The above-described electrode terminals 223 can supply the power required for driving the vertical cavity surface emitting laser device 222.

[0074] Although not specifically illustrated, the above-described electrode terminals 223 may be provided with terminal holes that allow the terminal wires connected to the vertical cavity surface emitting laser device 222 to extend to the lower part of the device substrate 221.

[0075] The above-described cooling block 224 can be formed in a planar shape corresponding to the planar shape of the device substrate 221 and a predetermined height. The above-described cooling block 224 can be formed of a ceramic material or a metal material having heat conductivity. The above-described cooling block 224 can be bonded to the lower surface of the device substrate 221 through a separate adhesive layer. The above-described cooling block 224 can release downward the heat generated in the vertical cavity surface emitting laser device 222 mounted on the surface of the device substrate 221. Therefore, the above-described cooling block 224 can cool the device substrate 221 and the vertical cavity surface emitting laser device 222.

[0076] The above-described cooling block 224 may form a cooling flow path 224a inside for cooling water to flow. In the above-described cooling flow path 224a, an inlet and an outlet may be formed on the lower surface, and various forms of flow paths may be formed inside the cooling block 224.

[0077] The above-described substrate rotation module 300 may include an inner rotation unit 310 and an outer rotation unit 320. The above-described substrate rotation module 300 can rotate the substrate holder 150 in a non-contact manner along the horizontal direction. More specifically, the above-described inner rotation unit 310 may be combined with the lower part of the substrate holder 150 in the lower accommodation space 100b of the process chamber 100. And the above-described outer rotation unit 320 may face the inner rotation unit 310 outside the process chamber 100. The above-described outer rotation unit can use magnetic force to rotate the inner rotation unit 310 in a non-contact manner.

[0078] The above-mentioned inner rotating unit 310 may be formed in the same structure as the rotor of the motor. For example, the above-mentioned inner rotating unit 310 is integrally formed in an annular shape and may be formed in a magnet structure in which N poles and S poles are alternately formed in the circumferential direction. The above-mentioned inner rotating unit 310 may be combined with the lower part of the substrate bracket 150, that is, combined with the connection bracket 152. In this case, the above-mentioned inner rotating unit 310 may be spaced upward from the upper part of the lower plate 140. On the other hand, although not specifically illustrated, the above-mentioned inner rotating unit 310 may be supported by a separate support unit to prevent vibration during rotation or to make the rotation smooth. For example, the above-mentioned inner rotating unit 310 may be supported by a support bearing or a roller at the lower part.

[0079] The above-mentioned outer rotating unit 320 may be formed in the same structure as the stator of the motor. For example, the above-mentioned outer rotating unit 320 may include an iron core formed in an annular shape and a wire wound around the iron core. The above-mentioned outer rotating unit 320 may rotate the inner rotating unit 310 by the magnetic force generated by the power supply supplied to the wire. The above-mentioned outer rotating unit 320 can be located outside the outer shell 110 in a manner facing the inner rotating unit 310 with respect to the outer shell 110. That is, at the same height as the inner rotating unit 310, the above-mentioned outer rotating unit 320 may be located outside with respect to the outer shell 110. Detailed implementation mode

[0080] Moreover, the irradiation module 200 of the present invention may include sub-irradiation modules 220 formed in various forms.

[0081] Figure 4 It is a perspective view of the irradiation module according to another embodiment of the present invention. Figure 5 It is a perspective view of the irradiation module according to another embodiment of the present invention.

[0082] Refer to Figure 4 , the sub-irradiation module 220 of the irradiation module 200 according to another embodiment of the present invention may be generally in a quadrilateral shape as a whole. The above-mentioned sub-irradiation module 220 may be formed in a rectangular shape. Moreover, in the above-mentioned sub-irradiation module 220, the device area 221a is formed in a quadrilateral shape having an overall width and a specified length, and a terminal area 221b is formed at the entire front end of the device area 221a. And, the above-mentioned sub-irradiation module 220 does not form a terminal area 221b at the rear end. That is, the above-mentioned terminal area 221b is formed with the same width as the device area 221a and is located at the front end of the device area 221a. And, the length of the above-mentioned terminal area 221b may be smaller than that of the device area 221a. And, in the above-mentioned device irradiation module, one side and the other side may be formed in a straight line shape.

[0083] In the above-described irradiation module 200, when the sub-irradiation modules 220 are arranged along the y-axis direction, the terminal region 221b at the front end and the device region 221a of the sub-irradiation module 220 at the front side can be arranged in contact with each other.

[0084] Therefore, in the above-described irradiation module 200, the device regions 221a and the terminal regions 221b of the sub-irradiation modules 220 can be continuously arranged along the x-axis direction respectively, and the device regions 221a and the terminal regions 221b can be alternately arranged along the y-axis direction.

[0085] Moreover, in the relationship between the above-described irradiation module 200 and the flat substrate a located above, the device region 221a can be located at the center of the flat substrate a. And the above-described irradiation module 200 can make the terminal region 221b located at the center of the flat substrate a. Referring to the following evaluation results, when the device region 221a is located at the center of the flat substrate a, the above-described irradiation module 200 can heat the flat substrate a more uniformly.

[0086] Referring to Figure 5 , the sub-irradiation module 220 of the irradiation module 200 according to another embodiment of the present invention can be substantially in a quadrilateral shape. The above-described sub-irradiation module 220 can be in a quadrilateral shape. And the above-described sub-irradiation module 220 can form a rectangular shape with a predetermined length and a width equivalent to cutting the overall width at the other side of the front end and the one side of the rear end in the quadrilateral shape for the terminal region 221b. That is, the width of the above-described terminal region 221b can be equivalent to the width of cutting the width of the sub-device module. The above-described terminal region 221b can be located in the diagonal direction in the rectangle. In the above-described sub-irradiation module, the region other than the terminal region 221b can be formed by the device region 221a.

[0087] Moreover, in the above-described device irradiation module, a linear shape can be formed on one side and the other side. The length of the above-described terminal region 221b can be smaller than the length of the device region 221a. The above-described terminal region 221b can be formed with the same length at the front side and the rear side.

[0088] In the above-described sub-irradiation module 220, when arranged along the y-axis direction, the terminal region 221b on one side of the front end can be adjacent to the device region 221a on the one side of the rear end of the sub-irradiation module 220 at the front side. In the above-described sub-irradiation module 220, when arranged along the y-axis direction, the terminal region 221b on the other side of the rear end can be adjacent to the device region 221a on the other side of the front end of the sub-irradiation module 220 at the front side.

[0089] Further, in the above sub-irradiation module 220, with the y-axis direction as a reference, in the region where the terminal region 221b is formed, the device regions 221a and the terminal region 221b may be alternately arranged along the x-axis direction, and in the region where the terminal region 221b is not formed, the device regions 221a are linearly arranged along the x-axis direction.

[0090] Therefore, the above irradiation module 200 may have a region where the device regions 221a and the terminal region 221b are alternately arranged along the x-axis direction and a region where only the device regions 221a are arranged, and the device regions 221a and the terminal region 221b may be alternately arranged along the y-axis direction.

[0091] Next, the function of the substrate heat treatment apparatus using the vertical cavity surface emitting laser device 222 according to an embodiment of the present invention will be described. Hereinafter, the function of the above substrate heat treatment apparatus will be mainly described centering on the function of the irradiation module 200. And, the case where the above flat substrate a is a semiconductor wafer will be mainly described.

[0092] As described above, when formed in the Figure 2 or Figure 4 structure, in the irradiation module 200 of the present invention, the device regions 221a and the terminal region 221b of the sub-irradiation module 220 are continuously arranged along the x-axis direction, and the device regions 221a and the terminal region 221b are alternately arranged along the y-axis direction. That is, in the above irradiation module 200, when the sub-irradiation module 220 is arranged along the x-axis direction and the y-axis direction, the terminal region 221b is formed with a predetermined width along the x-axis direction and is alternately formed with the device region 221a along the y-axis direction. And, in the above irradiation module 200, the terminal region 221b is formed with a relatively small length. The above sub-irradiation module 220 may be integrally formed in a square or rectangular shape.

[0093] In the above-mentioned irradiation module 200, partial overlapping of the laser beams irradiated from each vertical cavity surface emitting laser device 222 mainly occurs in the terminal region 221b and forms a one-dimensional line shape according to the arrangement of the terminal region 221b. In the above-mentioned irradiation module 200, the intensity deviation of the overlapping laser beams in the terminal region 221b is approximately 0.25%. However, in the above-mentioned irradiation module 200, the region where the overlapping occurs is a one-dimensional line shape and is not consistent with the circumferential direction of the semiconductor wafer. Therefore, when the above-mentioned irradiation module 200 irradiates the semiconductor wafer with laser beams and rotates the semiconductor wafer, the intensity deviation of the laser beams can be further reduced. When the above-mentioned semiconductor wafer rotates, the reduction rate of the intensity deviation of the laser beams can be determined according to the rotation speed of the semiconductor wafer. For example, when the rotation speed of the above-mentioned semiconductor wafer is 200 rpm, the intensity deviation of the laser beams will be reduced to 0.05%. Among them, the intensity deviation of the above-mentioned laser beams can affect the heating degree of the semiconductor wafer and directly affect the temperature uniformity of the semiconductor wafer.

[0094] And, as described above, when formed in the Figure 5 structure, the irradiation module 200 of the present invention can have a region where the device regions 221a and the terminal regions 221b are alternately arranged along the x-axis direction and a region where only the device regions 221a are arranged, and the device regions 221a and the terminal regions 221b can be alternately arranged along the y-axis direction. In the above-mentioned irradiation module 200, the terminal region 221b can be in the diagonal direction in the sub-irradiation module 220. Compared with the Figure 2 or Figure 4 irradiation module 200, the above-mentioned irradiation module 200 can increase the output of the laser beams per unit area by increasing the number of vertical cavity surface emitting laser devices 222 for each sub-irradiation module 220. And, in the above-mentioned irradiation module 200, the device substrate 221 can be easily combined with the cooling block 224 in each sub-irradiation module 220. In the above-mentioned irradiation module 200, the overlapping terminal regions 221b are arranged in a zigzag shape along the x-axis direction and are not arranged in a straight line. Therefore, compared with the Figure 2 and Figure 4 , the temperature deviation is relatively high. For example, the intensity deviation of the above-mentioned irradiation module 200 is 0.34%.

[0095] In addition, in the above-mentioned irradiation module 200, the overlapping terminal regions 221b are arranged in a straight line along the x-axis direction compared with the circumferential direction of the semiconductor wafer. Therefore, when the semiconductor wafer rotates, the above-mentioned irradiation module 200 can improve the non-uniformity based on the overlap and reduce the intensity deviation to 0.05%. Therefore, the above-mentioned irradiation module 200 can increase the irradiation uniformity of the laser beams related to the surface of the semiconductor wafer.

[0096] When the semiconductor wafer is rotated while being irradiated with the laser beam by the above-described irradiation module 200, the number of vertical cavity surface emitting lasers participating in the laser beam irradiation of a specific area of the semiconductor wafer can be increased. Therefore, based on the output deviation between the micro-emitters of the vertical cavity surface emitting laser devices 222 constituting the above-described irradiation module 200 and the output deviation between the vertical cavity surface emitting laser devices 222, the deviation of the laser beam irradiated onto the semiconductor wafer can be significantly reduced. Also, when a micro-emitter fails due to long-term operation, the above-described irradiation module 200 can also maintain the irradiation uniformity of the laser beam.

[0097] Also, the above-described irradiation module 200 can independently supply power to and control each sub-irradiation module 220, or independently supply power to and control the sub-irradiation modules 220 located in regions divided into multiple parts. Usually during the heat treatment process, more heat is lost from the edge portion of the above-described semiconductor wafer, so relatively more energy may need to be supplied. The above-described irradiation module 200 can increase the power supplied to the sub-irradiation module 220 that irradiates the laser beam onto the edge portion of the semiconductor wafer. And, in the above-described irradiation module 200, the terminal regions 221b are arranged along the x-axis direction and overlap in a one-dimensional pattern. Therefore, when the semiconductor wafer is rotated, the output difference between the sub-irradiation modules 220 can be reduced. Thus, the above-described irradiation module 200 can heat the semiconductor wafer more uniformly. That is, the above-described irradiation module 200 can effectively eliminate the increase in the intensity deviation of the laser beam caused by the output difference between the sub-irradiation modules 220. The above-described irradiation module 200 can uniformly heat the semiconductor wafer as a whole without adjusting the separation distance between the sub-irradiation modules 220 located at the edge and the center and the semiconductor wafer. Also, the above-described irradiation module 200 can uniformly heat the flat substrate a in a manner independent of the area of the flat substrate a without changing the arrangement interval and the number of the sub-irradiation modules 220.

[0098] Hereinafter, the evaluation results of a substrate heat treatment apparatus according to an embodiment of the present invention will be described.

[0099] Figure 6a and Figure 6b is a top view of the irradiation module installed in the substrate heat treatment apparatus according to an embodiment of the present invention. Figure 2 of the irradiation module. Figure 7 is for the flat substrate when Figure 6a and Figure 6b the evaluation result of the heat flux based on the axial direction when stopped in the substrate heat treatment apparatus. Figure 8 is for the flat substrate when Figure 6a and [[ID=2)5]] Figure 6b the evaluation result of the heat flux when rotated in the substrate heat treatment apparatus. Figure 9 is based on the flat substrate when Figure 6aTemperature distribution evaluation results of the rotation speed in the substrate heat treatment apparatus. Figure 10 Based on a flat substrate in Figure 6b Temperature distribution evaluation results of the rotation speed in the substrate heat treatment apparatus. Figure 11 Top view of the irradiation module installed in the flat substrate heat treatment apparatus of the comparative example. Figure 12 For a flat substrate in Figure 11 Evaluation results of the heat flux based on the axial direction when the substrate heat treatment apparatus stops. Figure 13 Evaluation results of the heat flux based on the axial direction when the flat substrate rotates in the substrate heat treatment apparatus provided with the irradiation module of the comparative example.

[0100] In this evaluation, as Figure 6a and Figure 6b shown, by using the Figure 2 substrate heat treatment apparatus with an irradiation module in the embodiment of Figure 11 to conduct the evaluation. And, as a comparative example, as

[0101] shown, the evaluation of the substrate heat treatment apparatus with an irradiation module of the comparative example used in the past was also conducted. Figure 6a In the substrate heat treatment apparatus of the embodiment of the present invention used in this evaluation, the overall area of the irradiation module is larger than the area of the wafer. As Figure 6b shown, the above substrate heat treatment apparatus can make the terminal area of the irradiation module pass through the center of the flat substrate, and as

[0102] shown, make the device area of the irradiation module pass through the center of the flat substrate. In this evaluation, the heat flux was evaluated in the axial direction in the state where the flat substrate was stopped and rotated. And, in this evaluation, in the state where the flat substrate was rotated, the flat substrate was heated to about 1000 °C, and the maximum temperature, minimum temperature, average temperature, and temperature difference of the flat substrate were evaluated. Figure 7 Referring to Figure 6a and Figure 6b when the flat substrate is in the stopped state, the above substrate heat treatment apparatus shows a heat flux difference based on the device area and terminal area of the irradiation module along the x-axis direction. In the above substrate heat treatment apparatus, the heat flux difference in the x-axis direction is 1.5%. This difference is judged to be caused by the device area and terminal area in the irradiation module. In the above irradiation module, the terminal area and device area are clearly distinguished along the x-axis direction, and the reason is judged to be that the length of the terminal area is relatively longer than the width. On the contrary, the above substrate heat treatment apparatus has only the device area in the irradiation module along the y-axis direction of the irradiation module, so no heat flux difference appears. The evaluation results as described above are basically the same in the irradiation modules of

[0103] Referring to Figure 8, in the state where the flat substrate is rotating, compared with the stopped state, the above substrate heat treatment apparatus exhibits a relatively uniform heat flux distribution regardless of the axial direction. And, regardless of the axial direction, the heat flux difference of the above substrate heat treatment apparatus is evaluated to be 0.3%. The evaluation results as described above are basically the same in Figure 6a and Figure 6b 's irradiation modules.

[0104] Referring to Figure 9 , Figure 6a 's substrate heat treatment apparatus provided with an irradiation module can reduce the maximum temperature of the flat substrate as the rotation speed of the flat substrate increases, and the measured minimum temperature is constant. As the rotation speed of the above flat substrate gradually increases to 32 rpm, 60 rpm, and 120 rpm, the measured maximum temperatures of the flat substrate are 1017.2 °C, 1017.0 °C, and 1016.9 °C, and the minimum temperature is 115.5 °C, so that the temperature deviation is reduced to 1.7 °C, 1.5 °C, and 1.4 °C. On the contrary, in the state where the above flat substrate is stopped, the maximum temperature is 1018.1 °C and the minimum temperature is 1015.3 °C, so that the temperature deviation is 2.8 °C, which is increased compared with the rotation state.

[0105] Referring to Figure 10 , Figure 6b 's substrate heat treatment apparatus provided with an irradiation module exhibits the same trend as Figure 6a 's substrate heat treatment apparatus provided with an irradiation module. However, as the rotation speed of the above flat substrate gradually increases to 32 rpm, 60 rpm, and 120 rpm, the measured maximum temperatures of the flat substrate are all 1001.6 °C, and the minimum temperatures are 1000.1 °C, 1000.2 °C, and 1000.3 °C, and the temperature deviation is reduced to 1.5 °C, 1.4 °C, and 1.3 °C. On the contrary, in the state where the above flat substrate is stopped, the maximum temperature is 1001.9 °C and the minimum temperature is 999.6 °C, so that the temperature deviation is 2.3 °C, which is increased compared with the rotation state. Compared with the irradiation module of Figure 6a , Figure 6b 's irradiation module has a relatively smaller temperature deviation. This evaluation result is considered to be because Figure 6b 's irradiation module is configured such that the device region passes through the center of the flat substrate, resulting in a relatively higher temperature in the central part.

[0106] Referring to Figure 11 , in the irradiation module of the comparative example, the device region and the terminal region are respectively in the shape of a regular quadrilateral, forming a chess shape in which the device region and the terminal region are alternately arranged.

[0107] Referring to Figure 12, in a state where the flat substrate is stopped, the substrate heat treatment apparatus of the comparative example exhibits a heat flux difference between the device region and the terminal region based on the irradiation module in the x-axis direction and the y-axis direction. In the above substrate heat treatment apparatus, the heat flux differences in the x-axis direction and the y-axis direction are both evaluated to be 0.9%. In a state where the flat substrate is stopped, the substrate heat treatment apparatus of the comparative example is evaluated to have a heat flux difference smaller than Figure 6a and Figure 6b the heat flux difference in the x-axis direction of the substrate heat treatment apparatus. It can be judged that in the irradiation module of the comparative example, since the length of the terminal region is relatively small, the temperature rises through the adjacent device region.

[0108] Referring to Figure 13 , in a state where the flat substrate is rotating, compared with when it is stopped, the substrate heat treatment apparatus of the comparative example exhibits a relatively small heat flux difference. However, the heat flux difference of the above substrate heat treatment apparatus is higher than Figure 6a and Figure 6b the heat flux difference of the substrate heat treatment apparatus.

[0109] From the above evaluation, it can be seen that when the flat substrate is rotated, the substrate heat treatment apparatus of the embodiment of the present invention can heat the flat substrate more uniformly.

[0110] The embodiments disclosed in this specification are only the most preferred embodiments selected to help ordinary technicians understand among the various embodiments that can be implemented. However, the technical idea of the present invention is not limited to or restricted to this embodiment. Without departing from the technical idea of the present invention, various changes, additions, and modifications can be made, and other equivalent embodiments can also be implemented.

[0111] Industrial Applicability

[0112] The substrate heat treatment apparatus using a vertical cavity surface emitting laser of the present invention can be used for heat treatment by heating a flat substrate such as a semiconductor wafer or a glass substrate with laser light irradiated from a vertical cavity surface emitting laser.

Claims

1. A substrate heat treatment apparatus using a vertical cavity surface emitting laser device, characterized in that, Comprising: A process chamber for placing a flat substrate to be heat treated; and An irradiation module, including a device arrangement board and a sub-irradiation module, for irradiating a laser beam onto the flat substrate. The sub-irradiation module is placed on the upper surface of the device arrangement board. The sub-irradiation module has a device area and a terminal area. The device area is used for installing a vertical cavity surface emitting laser device, and the terminal area is used for installing electrode terminals and is located on the front side or the rear side of the device area. In the irradiation module, the device area and the terminal area are arranged along the x-axis direction respectively, and the device area and the terminal area are alternately arranged along the y-axis direction perpendicular to the x-axis direction. In the sub-irradiation module, the device area is in a quadrilateral shape, and the terminal area protrudes and is formed on the other side of the front end and one side of the rear end of the device area. In the irradiation module, the device area and the terminal area are continuously arranged along the x-axis direction respectively, and the device area and the terminal area are alternately arranged along the y-axis direction. The irradiation module is formed in such a way that the device area is located at the center of the flat substrate.

2. The substrate heat treatment apparatus using a vertical cavity surface emitting laser device according to claim 1, characterized in that, The sub-irradiation module is formed in such a way that it receives power independently.

3. The substrate heat treatment apparatus using a vertical cavity surface emitting laser device according to claim 1, characterized in that, The sub-irradiation module includes: A device substrate for installing the vertical cavity surface emitting laser device and the electrode terminals; and A cooling block combined with the lower part of the device substrate for cooling the device substrate and the vertical cavity surface emitting laser device. The cooling block is formed with a cooling flow path inside for the cooling water to flow through.

4. The substrate heat treatment apparatus using a vertical cavity surface emitting laser device according to claim 1, characterized in that, The process chamber includes: An outer shell; An inner shell, formed inside the outer shell at a height lower than that of the outer shell; A light beam transmission plate located above the inner shell; and A lower plate combined with the lower parts of the outer shell and the inner shell. The process chamber has an upper accommodation space and a lower accommodation space. The upper accommodation space is formed between the inner side of the outer shell and the upper part of the inner shell, providing a space for placing the flat substrate. The lower accommodation space is formed between the outer side surface of the inner shell and the inner side surface of the outer shell. The irradiation module is located below the light beam transmission plate and irradiates the laser beam onto the lower surface of the flat substrate.

5. The substrate heat treatment apparatus using a vertical cavity surface emitting laser device according to claim 4, characterized in that, The process chamber further includes a substrate support for supporting the outside of the flat substrate and extending into the lower accommodation space. The above-mentioned substrate heat treatment device further includes a substrate rotation module, which is composed of an inner rotation unit and an outer rotation unit. The inner rotation unit is in the form of a ring with N poles and S poles alternately formed along the circumferential direction, and is combined with the lower part of the substrate support inside the lower accommodation space. The outer rotation unit is placed outside the outer shell in a manner facing the inner rotation unit, and rotates the inner rotation unit by generating magnetic force.

6. The substrate heat treatment apparatus using a vertical cavity surface emitting laser device according to claim 1, wherein The above-mentioned substrate heat treatment device further includes a substrate rotation module that supports and rotates the flat substrate.

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