Magnetron sputtering equipment

Abstract

The present application discloses a magnetron sputtering device, which includes: a process chamber; a target material, which is arranged at the top of the process chamber; a supporting base, which is used to support a wafer, and the supporting base is arranged in the process chamber, and along the height direction of the process chamber, the supporting base is relatively arranged below the target material; a guiding device, which is arranged between the target material and the supporting base, and the guiding device is configured to form an electric field or a magnetic field in the process chamber, and the electric field or the magnetic field is used to adjust the movement trajectory of particles sputtered from the target material, so that the particles tend to be vertically deposited on the wafer. The above scheme can optimize the deposition quality of particles sputtered from the target material.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a magnetron sputtering device. Background Art

[0002] In the process of manufacturing semiconductor chips, grooves need to be constructed on the wafer, and metal lines are deposited in the grooves through the PVD process (physical vapor deposition). These metal lines can connect transistors and other components in series to form integrated circuits. In the specific deposition process, the particles sputtered from the target material need to be deposited into the grooves of the wafer based on magnetron sputtering technology.

[0003] However, the particles sputtered from the target material are in an irregular scattered state, and the movement trajectories of most particles are inclined rather than perpendicular to the wafer surface, which makes it difficult for these particles to align and fall into the grooves for deposition, resulting in phenomena such as the groove openings being blocked, deposition voids existing, and particles moving outside the wafer. Summary of the invention

[0004] The present application discloses a magnetron sputtering device to optimize the deposition quality of particles sputtered from a target material.

[0005] In order to solve the above problems, this application adopts the following technical solutions:

[0006] The present application provides a magnetron sputtering device, which includes:

[0007] Process chamber;

[0008] A target material is disposed on the top of the process chamber;

[0009] A supporting base, used for supporting the wafer, the supporting base is arranged in the process chamber, and along the height direction of the process chamber, the supporting base is relatively arranged below the target material;

[0010] A guide device is arranged between the target material and the supporting base, and the guide device is configured to form an electric field or a magnetic field in the process chamber, and the electric field or the magnetic field is used to adjust the movement trajectory of particles sputtered from the target material so that the particles tend to be vertically deposited on the wafer.

[0011] The technical solution adopted in this application can achieve the following beneficial effects:

[0012] In the magnetron sputtering equipment implemented in the present application, the guide device can form an electric field or a magnetic field in the process chamber, and the electric field or the magnetic field generates an electric field force or a magnetic field force to adjust the movement trajectory of the particles sputtered from the target material, so that the particles tend to be deposited vertically on the wafer. This not only increases the number of particles falling into the wafer and reduces the waste of target material, but also makes the particles fall vertically to the bottom of the wafer groove, effectively improving the problem of abnormal particle deposition and blocking the groove opening and the existence of deposition voids, and ultimately achieving the effect of improving the deposition quality of the particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The drawings described herein are used to provide further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute improper limitations on the present application.

[0014] In the attached picture:

[0015] Figure 1 A schematic diagram of the structure of a magnetron sputtering device disclosed in an embodiment of the present application;

[0016] Figure 2 A top view of the guide device disclosed in an embodiment of the present application;

[0017] Figure 3 for Figure 2 A cross-sectional view of the first guide device in the AA direction;

[0018] Figure 4 This is a schematic structural diagram of a second guide device disclosed in an embodiment of the present application;

[0019] Figure 5 for Figure 2 A cross-sectional view of the second guide device in the middle AA direction;

[0020] Figure 6 This is a schematic diagram of the principle of guiding particles by the second guiding device disclosed in the embodiment of the present application;

[0021] Figure 7 A schematic structural diagram of a first magnetic field forming component disclosed in an embodiment of the present application;

[0022] Figure 8 The guiding device disclosed in the embodiment of the present application includes a schematic structural diagram of three main parts;

[0023] Fig. 9 The magnetron sputtering device disclosed in the embodiment of the present application includes a schematic structural diagram of multiple guide devices.

[0024] Description of reference numerals:

[0025] 100-process chamber, 110-external chamber, 120-protective cover,

[0026] 200-Bearing base,

[0027] 300-magnetron sputtering assembly, 310-magnetron, 320-drive mechanism,

[0028] 400-guiding device, 410-first main body, 420-second main body, 430-third main body, 440-first magnetic field forming component,

[0029] T-target, W-wafer, H1-first through hole, H2-second through hole,

[0030] U1-first potential, U2-second potential. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0032] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0033] In order to optimize the deposition quality of particles sputtered from the target material, the present application provides a magnetron sputtering device. Figures 1 to 9 As shown, the magnetron sputtering equipment of the embodiment of the present application includes a process chamber 100 , a target material T, a supporting base 200 and a guiding device 400 .

[0034] The process chamber 100 is a basic component of the magnetron sputtering device, which can serve as a base for installing some other components and protect the components disposed in the process chamber 100. The process chamber 100 has a process space inside, which provides a specific process environment for processing the wafer W.

[0035] The target material T is disposed on the top of the process chamber 100 . The embodiment of the present application does not limit the specific material of the target material T, and the target material T may be copper, aluminum, or the like.

[0036] The supporting base 200 is disposed in the process chamber 100 and is used to support the wafer W. The supporting base 200 may be provided with a fixing component (such as a chuck component), and the fixing component is used to fix the wafer W on the supporting base 200 to prevent the wafer W from shifting during the process. At the same time, along the height direction of the process chamber 100, the supporting base 200 is relatively arranged below the target material T. Specifically, the target material T and the supporting base 200 are arranged in sequence from top to bottom along the height direction of the process chamber 100, and the two are relatively arranged, so that after the target material T sputters out particles, the particles can smoothly fall on the wafer W of the supporting base 200.

[0037] The magnetron sputtering device of the embodiment of the present application further includes a magnetron sputtering assembly 300, which is used to act on the target material T to sputter out particles. The magnetron sputtering assembly 300 may include a driving mechanism 320 and a magnetron 310 connected to a DC power supply, and the magnetron 310 is arranged on the side of the target material T away from the supporting base 200. When performing the magnetron sputtering process, after the process gas (usually argon gas) is introduced into the process chamber 100, a DC bias is applied to the target material T, so that the target material T is negatively biased relative to the grounded process chamber 100, so that the process gas discharge is excited to generate plasma, and the positively charged plasma will be attracted to the negatively biased target material T. When the energy of the plasma is large enough, it will bombard the surface of the target material T, thereby causing the target material T to sputter out particles; based on the material of the target material T, corresponding metal particles, such as copper particles, aluminum particles, etc., will be sputtered.

[0038] The bombardment area and angle of the target material T by the plasma generated by the process gas discharge are all random, so the particles sputtered by the target material T are in an irregular scattered state, which will cause some particles to sputter outside the wafer W area, thereby causing waste of the target material T. Even if the remaining particles can fall within the range of the wafer W, most of them will be incident at an oblique angle to the surface of the wafer W and it will be difficult to deposit into the groove of the wafer W. They will even accumulate around the opening of the groove and block the opening, further increasing the difficulty of the particles entering the groove. With the advancement of technology, the characteristic size of semiconductor chips is set smaller and smaller, which makes the opening of the groove on the wafer W further reduced and the aspect ratio further increased, and the above problems will become more serious.

[0039] In view of the above problems, the magnetron sputtering equipment in the embodiment of the present application solves the problems by providing a guide device 400 .

[0040] In an embodiment of the present application, the guide device 400 is arranged between the target material T and the supporting base 200, and the guide device 400 is configured to form an electric field or a magnetic field in the process chamber 100, and the electric field or the magnetic field is used to adjust the movement trajectory of the particles sputtered from the target material so that the particles tend to be deposited vertically on the wafer W.

[0041] It should be understood that particles are sputtered from the target material T and fall onto the wafer W. The area between the target material T and the supporting base 200 is the sputtering area. The guide device 400 is arranged between the target material T and the supporting base 200, so that the guide device 400 forms an electric field or a magnetic field in the sputtering area, thereby guiding the particles in the sputtering area.

[0042] If the guide device 400 is used to form an electric field, the formed electric field causes the particles therein to be affected by the electric field force, and under the action of the electric field force, the movement trajectory of the particles can be changed; if the guide device 400 is used to form a magnetic field, the formed magnetic field causes the particles therein to be affected by the magnetic field force, and under the action of the magnetic field force, the movement trajectory of the particles can be changed.

[0043] By presetting the structure of the guide device 400, the guiding effect of the electric field force or magnetic field force on the particles can be adjusted, so that the particles sputtered outside the wafer W are guided to fall into the wafer W, and these particles and the particles that originally fell into the wafer W fall into the wafer W at an angle close to perpendicular to the wafer W. In other words, the guide device 400 allows the particles to fall onto the wafer W at an incident angle approaching 0, and the incident angle of the particles refers to the angle between the movement trajectory of the particles and the normal line of the surface of the wafer W. From the overall situation of the particles sputtered by the target material T, the particles have changed from the previous irregular scattering state to a state of being more concentrated and incident on the wafer W vertically downward.

[0044] In this case, the number of particles sputtered from the target material T that fall into the wafer W will increase significantly, which can not only reduce the waste of the target material T, but also increase the number of particles that fall into the groove, reducing the occurrence of deposition voids to a certain extent; at the same time, since more particles tend to fall vertically into the wafer W, these particles will not be deposited at the opening of the groove like obliquely incident particles, nor will they be deposited on the sidewalls near the opening after passing through the opening. They can fall vertically to the bottom of the groove to ensure that the groove is filled with particles everywhere, thereby improving the uniformity of particle deposition in the groove, effectively avoiding the occurrence of deposition voids, and also avoiding abnormal deposition of particles at the groove opening to block the opening. Based on the above beneficial effects, the guide device 400 of the embodiment of the present application can effectively improve the deposition quality of particles.

[0045] It should be noted that, since the electric field force can simultaneously change the direction and magnitude of the particle's velocity, the electric field formed by the guiding device of the embodiment of the present application is a directional electric field, so as to adjust the movement trajectory of the particle in the same general direction; since the magnetic field force only changes the direction of the particle's velocity but does not change the magnitude of the particle's velocity, the magnetic field formed by the guiding device of the embodiment of the present application does not necessarily need to be a directional magnetic field.

[0046] It can be seen from the above description that in the magnetron sputtering equipment of the embodiment of the present application, the guide device 400 can form an electric field or a magnetic field in the process chamber 100, and the electric field or the magnetic field generates an electric field force or a magnetic field force to adjust the movement trajectory of the particles sputtered from the target material, so that the particles tend to be vertically deposited on the wafer W. This not only increases the number of particles falling into the wafer W and reduces the waste of the target material T, but also makes the particles fall vertically to the bottom of the groove of the wafer W, effectively improving the problem of abnormal particle deposition and blocking the groove opening and the existence of deposition voids, and ultimately achieving the effect of improving the deposition quality of the particles.

[0047] like Figure 1 to Figure 3 As shown, the embodiment of the present application provides a first guide device 400, which may include a first main body 410 and a second main body 420. Along the height direction of the process chamber 100, the first main body 410 and the second main body 420 are arranged in sequence from top to bottom. The first main body 410 is provided with a plurality of first through holes H1, and the second main body 420 is provided with a plurality of second through holes H2. The plurality of first through holes H1 corresponds to the plurality of second through holes H2 one by one, that is, along the height direction of the process chamber 100, the projections of the first through holes H1 and the second through holes H2 can overlap with each other.

[0048] At the same time, the first main body 410 and the second main body 420 are both conductors, the first main body 410 is configured to be at a first potential U1, the second main body 420 is configured to be at a second potential U2, and the first potential U1 is greater than the second potential U2 to form a first sub-electric field between the first main body 410 and the second main body 420.

[0049] Specifically, under such a configuration, the first main body 410 and the second main body 420 both have conductive properties, so a first sub-electric field can be formed between the opposite side end surfaces of the first main body 410 and the second main body 420 by applying voltage to the first main body 410 and the second main body 420; since the first electric potential U1 is greater than the second electric potential U2, the direction of the first sub-electric field is from the end surface of the first main body 410 toward the second main body 420 to the end surface of the second main body 420 toward the first main body 410.

[0050] Due to the existence of the first through hole H1 and the second through hole H2, the electric field strength of the physically overlapping area of ​​the first main body 410 and the second main body 420 is undoubtedly higher, and the equipotential surfaces in this area are denser, while the electric field strength of the corresponding area of ​​the first through hole H1 and the second through hole H2 is undoubtedly lower, and the equipotential surfaces in this area are sparser; overall, as Figure 3 As shown, Figure 3 The equipotential surface distribution morphology of the first sub-electric field is shown. Figure 3 The dashed lines in the middle represent equipotential surfaces.

[0051] The particles sputtered from the target material T are positively charged. The electric field force they experience in the first sub-electric field is perpendicular to the equipotential surface, that is, the particles will deflect in the direction of the normal to the equipotential surface. Therefore, under the continuous action of the electric field force, the particles will present Figure 3 The motion trajectory in Figure 3 The solid line in the middle represents the trajectory of the particle. It should be noted that, since the particle is accelerated by its own weight and the electric field force, there will be a difference in the travel time between the upper and lower halves between the first main body 410 and the second main body 420, that is, the travel time of the particle in the upper half between the first main body 410 and the second main body 420 will be longer than the travel time in the lower half between the first main body 410 and the second main body 420. Therefore, the particle is more deflected by the electric field force in the upper half between the first main body 410 and the second main body 420, while the particle is less deflected by the electric field force in the lower half between the first main body 410 and the second main body 420. In this way, the particles incident in an irregular scattering state will all be emitted from the guide device 400 at an angle tending to be perpendicular to the wafer W, and the particles will be parallel to each other.

[0052] The embodiment of the present application does not limit the specific implementation method of configuring the first main body 410 to be at the first potential U1 and the second main body 420 to be at the second potential U2. For example, it can be implemented by an electric field loading component, and the electric field loading component can include a first DC power supply and a second DC power supply. The first DC power supply is electrically connected to the first main body 410 to form a path, and the second DC power supply is electrically connected to the second main body 420 to form a path, and the first DC power supply applies a first voltage to the first main body 410, and the first main body 410 is at the first potential U1, and the second DC power supply applies a first voltage to the second main body 420. The second voltage is applied to the first body 410 and the second body 420, and the second body 420 is at the second potential U2; or, the electric field loading component includes a DC power supply and an electrical connector (usually a wire), the DC power supply is electrically connected to the first body 410 and the second body 420 respectively, and the electrical connector is also electrically connected to the first body 410 and the second body 420, so that the DC power supply, the first body 410, the second body 420 and the electrical connector form a loop, and the DC power supply applies voltage to the first body 410 and the second body 420, so that the first body 410 is at the first potential U1 and the second body 420 is at the second potential U2.

[0053] By adjusting the intensity of the first sub-electric field, the magnitude of the electric field force to which the particles are subjected in the sputtering area can be adjusted. Since the movement trajectory of the particles is directly related to the magnitude of the electric field force to which they are subjected, it is difficult for the particles to fall vertically into the wafer W when the electric field force is large or small. Therefore, the guide device 400 can be pre-tested, and the intensity of the first sub-electric field can be adjusted to an appropriate range by observing the movement trajectory of the particles through the guide device 400.

[0054] The guiding device 400 of the embodiment of the present application can also adjust the guiding effect on the particles in other ways. In another embodiment, for example, Figure 8 As shown, the guide device 400 of the embodiment of the present application may also include a third main body 430. Along the height direction of the process chamber 100, the first main body 410, the second main body 420 and the third main body 430 are arranged in sequence from top to bottom, and the third main body 430 is provided with a plurality of third through holes. The plurality of second through holes H2 correspond one-to-one to the third through holes, that is, along the height direction of the process chamber 100, the projections of the first through hole H1, the second through hole H2 and the third through hole can overlap with each other.

[0055] Meanwhile, the third main body 430 is a conductor and is configured to be at a third electric potential which is less than the second electric potential U2 to form a second sub-electric field between the second main body 420 and the third main body 430 .

[0056] Specifically, under such a setting, the third main body 430 has conductive properties, so that a second sub-electric field can be formed between the opposite side end faces of the second main body 420 and the third main body 430 by applying a voltage to the third main body 430; since the second potential U2 is greater than the third potential, the direction of the second sub-electric field is from the end face of the second main body 420 toward the third main body 430 to the end face of the third main body 430 toward the second main body 420; the second sub-electric field has the same properties as the first sub-electric field, and the equipotential surface distribution morphology of the second sub-electric field is also as shown in FIG. Figure 3 In this case, after the particles are guided by the first sub-electric field, they are guided again by the second sub-electric field, and the second sub-electric field can make up for the lack of guiding effect of the first sub-electric field on the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W.

[0057] like Figure 1 , Figure 2 , Figure 4 and Figure 5 As shown, the embodiment of the present application provides a second guide device 400, which may include a first main body 410, a second main body 420 and a first magnetic field forming component 440. Along the height direction of the process chamber 100, the first main body 410 and the second main body 420 are arranged in sequence from top to bottom. The first main body 410 is provided with a plurality of first through holes H1, and the second main body 420 is provided with a plurality of second through holes H2. The plurality of first through holes H1 corresponds to the plurality of second through holes H2 one by one, that is, along the height direction of the process chamber 100, the projections of the first through holes H1 and the second through holes H2 can overlap with each other.

[0058] At the same time, the first main body 410 and the second main body 420 are both magnetic conductors, and the first magnetic field forming component 440 is used to magnetize the first main body 410 and the second main body 420, and form a first magnetic pole on the first main body 410, and form a second magnetic pole on the second main body 420, and the first magnetic pole and the second magnetic pole are different, so as to form a first sub-magnetic field between the first main body 410 and the second main body 420.

[0059] Specifically, under such a configuration, the first main body 410 and the second main body 420 both have magnetic conductivity, and the first magnetic field forming component 440 can smoothly magnetize the first main body 410 and the second main body 420, and form a first sub-magnetic field between the opposite side end surfaces of the first main body 410 and the second main body 420. The magnetic field direction of the first sub-magnetic field is related to the direction of the magnetic domains inside the first main body 410 and the second main body 420, and the direction of the magnetic domains inside the first main body 410 and the second main body 420 is related to the specific magnetization effect of the first magnetic field forming component 440, so that Figure 5 The embodiment shown is taken as an example, which shows the distribution morphology of magnetic flux lines of the first sub-magnetic field. Figure 5 The middle dotted line represents the magnetic flux lines. The first magnetic field forming component 440 magnetizes the first main body 410 and forms an N magnetic pole on the first main body 410. The first magnetic field forming component 440 magnetizes the second main body 420 and forms an S magnetic pole on the second main body 420. Therefore, the magnetic field direction of the first sub-magnetic field is also from the first main body 410 to the second main body 420.

[0060] Of course, the embodiment of the present application does not limit the specific types of magnetic poles formed on the first main body 410 and the second main body 420 respectively. In another embodiment, an S magnetic pole can be formed on the first main body 410 and an N magnetic pole can be formed on the second main body 420.

[0061] It should be noted that the magnetic field force formed by the guide device 400 of the embodiment of the present application mainly refers to the Lorentz force, which only changes the direction of the particle's velocity but does not change the magnitude of the particle's velocity. Therefore, it only changes the direction of movement of the particle but does not do work on the particle.

[0062] Due to the existence of the first through hole H1 and the second through hole H2, the magnetic field strength of the physically overlapping area of ​​the first main body 410 and the second main body 420 is relatively high, while the magnetic field strength of the corresponding area of ​​the first through hole H1 and the second through hole H2 is relatively low. Figure 5 The distribution morphology of magnetic flux lines in the first sub-magnetic field is shown.

[0063] The particles sputtered by the target material T are positively charged. When they move in the first sub-magnetic field, they will be subject to a magnetic field force perpendicular to the direction of movement and the magnetic field. The specific direction of the magnetic field force can be determined by the left-hand rule. Under the action of the magnetic field force, the particles will spiral along the direction of the magnetic flux lines. For details, see Figure 6 , Figure 6 It is only used to illustrate the principle of particle spiral motion and does not represent the particle Figure 6 The motion trajectory shown in ; at the same time, based on the distribution of magnetic field strength, the particles will gradually shift towards the area with lower magnetic field strength during spiral motion, and the particles will roughly present Figure 5 The motion trajectory in Figure 5 The solid line in the middle represents the trajectory of the particle. Until the particle moves to the vicinity of the central axis of the first through hole H1 and the second through hole H2, the magnetic field force on the particle is minimal, and the effect of the magnetic field force on the particle changing its velocity direction tends to be negligible; specifically, the direction of the particle's ejection velocity V' is different from the direction of the injection velocity V, and the direction of the ejection velocity V' is located in the axial direction of the second through hole H2. Therefore, the particle no longer performs a spiral motion but is ejected vertically downward from the second through hole H2. It can be seen that the particle tends to fall vertically into the wafer W after passing through the guide device 400.

[0064] By adjusting the strength of the first sub-magnetic field loaded by the first magnetic field forming component 440, the magnitude of the magnetic field force to which the particles are subjected in the sputtering area can be adjusted. Since the movement trajectory of the particles is directly related to the magnitude of the magnetic field force to which they are subjected, a large magnetic field force will cause serious energy consumption, while a small magnetic field force will make it difficult for the particles to fall vertically into the wafer W. Therefore, the guide device 400 can be pre-tested, and the strength of the first sub-magnetic field loaded by the first magnetic field forming component 440 can be adjusted to an appropriate range by observing the movement trajectory of the particles through the guide device 400.

[0065] The embodiment of the present application does not limit the specific type of the first magnetic field forming component 440, which can be a permanent magnet, as long as it can produce a magnetization effect on the first main body 410 and the second main body 420. In another embodiment, such as Figure 7 As shown, the first magnetic field forming component 440 of the embodiment of the present application can be selected as an electromagnet component. The electromagnet component can control the first sub-magnetic field by turning the power on and off. The magnetic field strength of the first sub-magnetic field can be controlled by changing the magnitude of the input current. The magnetic field direction of the first sub-magnetic field can also be changed by changing the direction of the current (including changing the winding direction of the coil in the electromagnet). Therefore, the electromagnet type first magnetic field forming component 440 is undoubtedly more convenient to operate.

[0066] Regardless of whether the first magnetic field forming component is a permanent magnet or an electromagnet component, it can be directly connected to the first main body 410 and the second main body 420 to enhance the magnetization effect. Figure 4 and Figure 5 As shown, the N magnetic pole of the first magnetic field forming component 440 is connected to the first main body 410, and the first main body 410 is magnetized to form an N magnetic pole. The S magnetic pole of the first magnetic field forming component 440 is connected to the second main body 420, and the second main body 420 is magnetized to form an S magnetic pole. At this time, the magnetic field direction of the first sub-magnetic field is also from the first main body 410 to the second main body 420.

[0067] The embodiment of the present application does not limit the specific connection relationship between the first magnetic field forming component 440 and the first main body 410 and the second main body 420. The N magnetic pole end of the first magnetic field forming component 440 can also be connected to the second main body 420, and the S magnetic pole end of the first magnetic field forming component 440 can also be connected to the first main body 410.

[0068] In order to avoid large deviations in the magnetic field strength of each region of the first sub-magnetic field, Figure 4 As shown, the first magnetic field forming component 440 of the embodiment of the present application is an electromagnet component, and there are multiple electromagnet components, all of which are arranged between the first main body 410 and the second main body 420, and are evenly arranged along the edge of the first main body 410; all of the electromagnet components are connected to the first main body 410 through the same magnetic end pole to form a first magnetic pole on the first main body 410, and all of the electromagnet components are connected to the second main body 420 through the same other magnetic end pole to form a second magnetic pole on the second main body 420.

[0069] Specifically, since all the electromagnet components are evenly arranged along the edge of the first main body 410, all the electromagnet components are also evenly arranged along the edge of the second main body 420, so that the electromagnet components exert a relatively uniform magnetization effect on the magnetic domains inside the first main body 410 and the second main body 420, thereby making the magnetic field distribution of the first sub-magnetic field relatively balanced, which is conducive to a relatively uniform and regular regulation of the particles. In this embodiment, all the electromagnet components are connected to the first main body 410 through the N magnetic pole (or the S magnetic pole), and correspondingly, all the electromagnet components are connected to the second main body 420 through the S magnetic pole (or the N magnetic pole).

[0070] It should be noted that the embodiment of the present application does not limit the specific number of the first magnetic field forming components 440, which can be four, seven, ten, etc.

[0071] The guiding device 400 of the embodiment of the present application can also adjust the guiding effect on the particles in other ways. In another embodiment, for example, Figure 8As shown, the guide device 400 of the embodiment of the present application may also include a third main body 430 and a second magnetic field forming component (not shown in the drawings). Along the height direction of the process chamber 100, the first main body 410, the second main body 420 and the third main body 430 are arranged in sequence from top to bottom, and the third main body 430 is provided with a plurality of third through holes, and the plurality of second through holes H2 correspond one by one to the third through holes, that is, along the height direction of the process chamber 100, the projections of the first through hole H1, the second through hole H2 and the third through hole can overlap with each other.

[0072] At the same time, the third main body 430 is a magnetic conductor, and the second magnetic field forming component is used to magnetize the second main body 420 and the third main body 430, and form a second magnetic pole on the second main body 420, and form a third magnetic pole on the third main body 430, and the second magnetic pole is different from the third magnetic pole, so as to load a second sub-magnetic field between the second main body 420 and the third main body 430.

[0073] Specifically, under such a setting, the third main body 430 has magnetic conductivity, and the second magnetic field forming component can smoothly magnetize the second main body 420 and the third main body 430, and form a second sub-magnetic field on the opposite side end surfaces of the second main body 420 and the third main body 430; the second sub-magnetic field can be set to have the same properties as the first sub-magnetic field, so that the magnetic flux distribution morphology of the second sub-magnetic field can also refer to Figure 5 In this case, after the particles are guided by the first sub-magnetic field, the particles are guided for the second time by the second sub-magnetic field, and the second sub-magnetic field can make up for the deficiency of the first sub-magnetic field in guiding the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W. In this embodiment, since the first magnetic field forming component 440 and the second magnetic field forming component jointly magnetize the second main body 420, the speed at which the second main body 420 is magnetized is significantly accelerated.

[0074] In the embodiment of the present application, the specific type of the second magnetic field forming component is not limited, and it can be the same as the first magnetic field forming component 440.

[0075] In an optional solution, the first main body 410 and the second main body 420 of the embodiment of the present application may both be plate-like structural members, and the first main body 410 and the second main body 420 may be parallel to each other.

[0076] It should be understood that, under such a configuration, taking the guide device 400 for forming an electric field (magnetic field) as an example, the electric field (magnetic field) formed by the guide device 400 has a certain regularity, which can be specifically referred to in Figure 3 ( Figure 5), that is, the electric field (magnetic field) intensity in the area corresponding to the first through hole H1 and the second through hole H2 is relatively low, while the electric field (magnetic field) intensity in the physically overlapping area around the first through hole H1 and the second through hole H2 is relatively high. The entire guide device 400 has a regular electric field (magnetic field) intensity distribution, which can make the particles incident from different first through holes H1 be emitted from the second through hole H2 at roughly the same angle, which is beneficial to make an overall adjustment of the electric field (magnetic field) formed by the guide device 400, and can avoid the problem that there are great differences in the emission angles of particles emitted from different second through holes H2, which leads to the inability to make an overall adjustment of the electric field (magnetic field) formed by the guide device 400 and the failure to take into account the states of most particles.

[0077] Of course, the embodiment of the present application does not limit the specific configuration of the first main body 410 and the second main body 420 , and they may also be block-shaped structural members, etc.

[0078] Whether it is the first type of guiding device 400 or the second type of guiding device 400, the guiding effect on the particles can be enhanced by increasing the number of guiding devices 400. Specifically, Fig. 9 As shown, the guiding device 400 of the embodiment of the present application may be multiple, and each guiding device 400 includes multiple main parts (such as Fig. 9 The first main body 410 and the second main body 420 in the process chamber 100 are arranged in sequence along the height direction of the process chamber 100.

[0079] When the guide device 400 is used to form an electric field, in two adjacent main bodies belonging to different guide devices, the electric potential of the main body located on the upper side is greater than the electric potential of the main body located on the lower side. Fig. 9 As shown, the electric potential of the second main body 420 in the upper guide device 400 is greater than the electric potential of the first main body 410 in the lower guide device 400. Under this structural layout, all the sub-electric fields formed by the guide devices 400 are from top to bottom along the height direction of the process chamber 100, that is, all the sub-electric fields form a directional and uninterrupted electric field group, so that the particles will be affected by multiple electric fields when passing through multiple guide devices 400 from top to bottom, so as to guide the particles multiple times. The subsequent electric fields can make up for the lack of guiding effect of the previous electric fields on the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W.

[0080] When the guide device 400 is used to form a magnetic field, the magnetic poles formed on two adjacent main bodies belonging to different guide devices are different. Fig. 9As shown, the magnetic poles formed on the second main body 420 in the upper guide device 400 are different from the magnetic poles formed on the first main body 410 in the lower guide device 400. Under this structural layout, not only a sub-magnetic field for guiding and adjusting the particles is formed inside the guide device 400, but also a sub-magnetic field can be formed between adjacent guide devices 400. The sub-magnetic fields formed by all guide devices 400 form an uninterrupted magnetic field group, so that the particles will be affected by multiple magnetic fields in the process of passing through multiple guide devices 400 from top to bottom, so as to guide the particles multiple times. The subsequent magnetic field can make up for the lack of guiding effect of the previous magnetic field on the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W.

[0081] Since the target material T has irregularities when sputtering particles, and the number of the first through holes H1 and the second through holes H2 is small, there is a probability that particles cannot fall into the first through holes H1 and the second through holes H2, which will cause waste of the target material T and blockage of the first through holes H1 and the second through holes H2.

[0082] Based on this, Figure 2 As shown, in the embodiment of the present application, a plurality of first through holes H1 can be arranged in a honeycomb shape on the first main body 410, and a plurality of second through holes H2 can be arranged in a honeycomb shape on the second main body 420. It should be understood that based on the honeycomb structure, the first main body 410 and the second main body 420 are equivalent to being set as a mesh structure, the number of the first through holes H1 and the second through holes H2 is increased, and the distribution is close, and the size of the entity part between the holes on the first main body 410 and the second main body 420 is small, so such a setting can undoubtedly effectively ensure that the particles fall into the first through holes H1 and the second through holes H2, and avoid the particles from being deposited on the entity parts of the first main body 410 and the second main body 420.

[0083] When the first through hole H1 and the second through hole H2 are honeycomb-shaped, both can be regular hexagons, but the embodiment of the present application does not limit the specific shapes of the first through hole H1 and the second through hole H2, and they can also be regular pentagons, regular octagons or even irregular shapes.

[0084] The embodiment of the present application does not limit the specific aperture width size of the first through hole H1 and the second through hole H2; however, if the aperture width value of the first through hole H1 and the second through hole H2 is too large, it will weaken the guiding effect of the guide device 400 on the particles. If the aperture width value of the first through hole H1 and the second through hole H2 is too small, the particles will easily block the first through hole H1 and the second through hole H2 after long-term use, which will make the function of the guide device 400 ineffective. Based on this, in an optional scheme, the maximum aperture width value range of the first through hole H1 and the second through hole H2 in the embodiment of the present application can be 30mm to 100mm; specifically, it can be 35mm, 50mm, 75mm, 90mm, etc. Under such a setting, the aperture width value of the first through hole H1 and the second through hole H2 can not only prevent them from being blocked, but also take into account the guiding effect of the guide device 400.

[0085] In the embodiment of the present application, there are many ways to arrange the first main body 410 and the second main body 420. For example, the edges of the first main body 410 and the second main body 420 are both extended to form a support portion, and the support portion extends to the bottom wall of the process chamber 100. In another embodiment, the first main body 410 of the embodiment of the present application can be connected to the inner wall of the process chamber 100 through its circumferential edge, and the second main body 420 can be connected to the inner wall of the process chamber 100 through its circumferential edge.

[0086] It should be understood that, under such a configuration, particles will not pass through the gap between the circumferential edges of the first main body 410 and the second main body 420 and the inner wall of the process chamber 100, thereby ensuring that all particles are guided by the guide device 400 so that all particles tend to fall vertically into the wafer W; at the same time, no additional connection structure is required on the first main body 410 and the second main body 420, thereby simplifying the structure of the first main body 410 and the second main body 420.

[0087] The embodiment of the present application does not limit the strength of the electric field. The electric field strength of the embodiment of the present application can range from 1000V / m to 100000V / m. At this time, the electric field strength range of the electric field is more appropriate. The electric field here includes the aforementioned first sub-electric field, the second sub-electric field, and other sub-electric fields generated by the guiding device. It should be noted that if the electric field strength of the electric field is less than 1000V / m, the electric field force on the particles is small and it is difficult to be guided to fall vertically into the wafer W. If the electric field strength of the electric field is greater than 100000V / m, two adjacent main parts (such as the first main part 410 and the second main part 420) will be broken down due to current overload.

[0088] Among the options, Figure 1As shown, the process chamber 100 may include an outer chamber 110 and a protective cover 120, wherein the protective cover 120 separates the sputtering region from the outer chamber 110. In this configuration, the protective cover 120 can confine the sputtering process to the sputtering region to prevent particles from sputtering onto the outer chamber 110, thereby extending the service life of the process chamber 100 as a whole.

[0089] In combination with the embodiment in which the first body member 410 and the second body member 420 are connected to the inner wall of the process chamber 100 via the circumferential edge, the first body member 410 and the second body member 420 may be directly connected to the inner wall of the protective cover 120 via the circumferential edge.

[0090] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0091] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A magnetron sputtering device, It is characterized in that include: Process chamber; A target material is disposed on the top of the process chamber; A supporting base, used for supporting the wafer, the supporting base is arranged in the process chamber, and along the height direction of the process chamber, the supporting base is relatively arranged below the target material; A guide device is disposed between the target material and the supporting base, and the guide device is configured to form a magnetic field in the process chamber, and the magnetic field is used to adjust the movement trajectory of particles sputtered from the target material so that the particles tend to be vertically deposited on the wafer; The guiding device includes a plurality of main parts and at least one magnetic field forming component. Along the height direction of the process chamber, the plurality of main parts are arranged in sequence from top to bottom. Each of the main parts is provided with a plurality of through holes, and the plurality of through holes of two adjacent main parts correspond to each other one by one. The magnetic field forming component is used to form a sub-magnetic field between two adjacent main parts.

2. The magnetron sputtering device according to claim 1, It is characterized in that The plurality of main body members include a first main body member and a second main body member. The first main body member and the second main body member are sequentially arranged from top to bottom in a height direction of the process chamber. The through hole provided in the first main body member is a first through hole, and the through hole provided in the second main body member is a second through hole. The first through hole corresponds to the second through hole one by one. The first main body and the second main body are both magnetic conductors, and the at least one magnetic field forming component includes a first magnetic field forming component, which is used to magnetize the first main body and the second main body, and form a first magnetic pole on the first main body, and form a second magnetic pole on the second main body, and the first magnetic pole is different from the second magnetic pole to form a first sub-magnetic field between the first main body and the second main body.

3. The magnetron sputtering device according to claim 2, It is characterized in that The plurality of main bodies further include a third main body, the at least one magnetic field forming assembly further includes a second magnetic field forming assembly, the first main body, the second main body and the third main body are sequentially arranged from top to bottom in a height direction of the process chamber, the through hole provided in the third main body is a third through hole, and the second through hole corresponds to the third through hole one by one; The third main body is a magnetic conductor, and the second magnetic field forming component is used to magnetize the second main body and the third main body, and to form the second magnetic pole on the second main body, and to form the third magnetic pole on the third main body, and the second magnetic pole is different from the third magnetic pole, so as to form a second sub-magnetic field between the second main body and the third main body.

4. The magnetron sputtering device according to claim 2, It is characterized in that The first magnetic field forming component is an electromagnet component, and there are multiple electromagnet components. All of the electromagnet components are arranged between the first main body and the second main body, and are evenly arranged along the edge of the first main body; all of the electromagnet components are connected to the first main body through the same magnetic end pole to form the first magnetic pole on the first main body, and all of the electromagnet components are connected to the second main body through the same other magnetic end pole to form the second magnetic pole on the second main body.

5. The magnetron sputtering device according to any one of claims 1 to 4, It is characterized in that There are multiple guide devices; along the height direction of the process chamber, all the guide devices are arranged in sequence from top to bottom; When the guide device is used to form a magnetic field, the magnetic poles formed on two adjacent main bodies belonging to different guide devices are different.

6. The magnetron sputtering device according to any one of claims 1 to 4, It is characterized in that The plurality of main body members are all plate-shaped structural members, and the plurality of main body members are parallel to each other.

7. The magnetron sputtering device according to any one of claims 1 to 4, It is characterized in that The through holes on each of the main body members are arranged in a honeycomb shape.

8. The magnetron sputtering device according to any one of claims 1 to 4, It is characterized in that The maximum opening width of the through hole ranges from 30 mm to 100 mm.

9. The magnetron sputtering device according to any one of claims 1 to 4, It is characterized in that The main body is connected to the inner wall of the process chamber through its circumferential edge.

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