Jig wafer, cleaning jig, and cleaning method

Abstract

This application relates to a wafer jig, a cleaning jig, and a cleaning method. The wafer jig includes a wafer body and an electrostatic generation module, located on and connected to the wafer body, for generating static charge, thereby imparting static charge to the wafer body. This application can effectively improve the cleaning performance of cavity equipment.

Description

Technical Field

[0001] The present application relates to the field of semiconductor equipment technology, and in particular to a fixture wafer, a cleaning fixture, and a cleaning method. Background Art

[0002] During semiconductor processing, a robotic arm places wafers to be processed into a sealed chamber, where film deposition and growth take place. The sealed chamber provides a stable process environment. However, as the equipment is used, impurities and foreign matter may accumulate within the chamber, impacting the quality of the products being processed.

[0003] Conventional technology typically uses a dummy wafer to continuously perform cleaning cycles to remove foreign matter from the chamber. However, this cleaning method is ineffective and may even require opening the chamber for maintenance. Summary of the Invention

[0004] According to some embodiments, a first aspect of the present application provides a fixture wafer, including:

[0005] Wafer body;

[0006] The static electricity generating module is located on the wafer body and connected to the wafer body, and is used for generating static electricity so that the wafer body has static electricity.

[0007] In one embodiment, the wafer body has a plurality of holes, and the holes are used to collect foreign matter.

[0008] In one embodiment, the wafer body includes a wafer adsorption layer and a foreign matter collection layer that are relatively arranged. The electrostatic generating module is located on the wafer adsorption layer and is connected to the wafer adsorption layer. The foreign matter collection layer has the plurality of holes, and the plurality of holes are through holes. There is a gap of a preset distance between the foreign matter collection layer and the wafer adsorption layer.

[0009] In one embodiment,

[0010] The wafer body has a plurality of electrostatic adsorption areas;

[0011] The static electricity generating module includes a plurality of static electricity generating units, and each of the static electricity generating units is correspondingly connected to one of the static electricity adsorption areas.

[0012] In one embodiment, a positioning hole is provided on the wafer body, and the positioning hole is used to position the wafer body.

[0013] In one embodiment, the fixture wafer further includes:

[0014] The first control module is located on the wafer body and connected to the static electricity generating module, and is used to control the static electricity generating module to generate static charges.

[0015] In one embodiment, the fixture wafer further includes:

[0016] The image acquisition module is located on the wafer body and connected to the first control module, and is used for acquiring foreign matter information and sending the foreign matter information to the first control module.

[0017] In one embodiment, the fixture wafer further includes:

[0018] The first wireless communication module is located on the wafer body and connected to the first control module.

[0019] The present application also provides a cleaning jig for cavity equipment, comprising:

[0020] The fixture wafer described in any one of the above items;

[0021] The wafer box is used to place the fixture wafer.

[0022] In one embodiment, the wafer box includes:

[0023] The box body has a wafer placement area inside, and the wafer placement area is used to accommodate and place the fixture wafer;

[0024] A foreign matter collecting member is located inside the box body, and the foreign matter collecting member is located below the wafer placement area and is used to collect foreign matter adsorbed by the wafer body.

[0025] In one embodiment, the method further includes:

[0026] an exhaust pipe, connected to the foreign matter collecting member, and used for discharging foreign matter on the foreign matter collecting member;

[0027] An air inlet pipeline is connected to the foreign matter collecting component and is used to purge foreign matter on the fixture wafer and / or the foreign matter collecting component.

[0028] In one embodiment, the wafer box further comprises:

[0029] a second control module, configured to control the static electricity generating module to generate static charges;

[0030] The second wireless communication module is connected to the second control module and is used to realize the communication connection between the second control module and the fixture wafer.

[0031] In one embodiment, the wafer box further includes a display panel, which is connected to the second control module and is used to display the foreign matter information, and the foreign matter information is collected by an image acquisition module located on the fixture wafer.

[0032] In one embodiment, the wafer box further includes a charging module, and the charging module is used to charge the static electricity generating module of the fixture wafer.

[0033] The present application also provides a method for cleaning a cavity device, comprising:

[0034] Transferring the fixture wafer described in any one of the above items into the cavity of the device through a robotic arm;

[0035] The static electricity generating module is controlled to generate static charges, so that the wafer body is charged with static charges to absorb foreign objects in the cavity and / or in the transmission path.

[0036] In one embodiment,

[0037] Before controlling the static electricity generating module to generate static charges, the method further includes:

[0038] collecting information about foreign matter in the cavity and / or in the transmission path;

[0039] The controlling the static electricity generating module to generate static charges includes:

[0040] According to the foreign object information, the switch of the static electricity generating module and / or the strength of the static electricity generated by the static electricity generating module are controlled.

[0041] In one embodiment,

[0042] The wafer body has a plurality of electrostatic adsorption areas, and the electrostatic generation module includes a plurality of electrostatic generation units, each of which is connected to a corresponding electrostatic adsorption area;

[0043] The controlling of the switch of the static electricity generating module and / or the strength of the static electricity generated by the static electricity generating module according to the foreign object information includes:

[0044] According to the foreign matter information of each electrostatic adsorption area, the switch of each electrostatic generating unit and / or the strength of the electrostatic charge generated by each electrostatic generating unit are controlled.

[0045] In one embodiment, after collecting the foreign matter information in the cavity and / or in the transmission path, the method further includes:

[0046] The foreign object information is displayed.

[0047] In one embodiment, after the static electricity generating module is controlled to generate static charges, the method further comprises:

[0048] Transferring the fixture wafer from the cavity to the wafer placement area in the wafer box by a robotic arm;

[0049] The static electricity generating module is controlled to be closed so that the foreign matter adsorbed by the wafer body falls to a foreign matter collecting member. The foreign matter collecting member is located inside the wafer box and below the wafer placement area.

[0050] In one embodiment, the wafer box further includes an exhaust pipe and an air intake pipe, and after controlling the static electricity generating module to be turned off, the method further includes:

[0051] Opening the exhaust pipe to discharge foreign matter from the foreign matter collecting member;

[0052] Open the air intake line to purge foreign matter from the foreign matter collecting member.

[0053] When the above-mentioned jig wafer, cleaning jig and cleaning method are used to clean the cavity equipment, the jig wafer can first be sent into the cavity of the equipment through the robotic arm of the cavity equipment, and then the electrostatic generation module can be controlled to generate static charge, so that the wafer body is charged with static charge to absorb foreign matter in the cavity and / or in the transmission path.

[0054] The fixture wafer of the present application can utilize the principle of electrostatic adsorption to quickly, safely, and at low cost clean foreign matter in the cavity (such as on the electrostatic chuck in the cavity) in a cavity environment, while also processing foreign matter in the transmission path. Therefore, the present application can effectively improve the cleaning effect, thereby effectively reducing product defects and improving product yield. In addition, the good cleaning effect also means that during the process, there is no need to frequently open the cavity and / or transmission path for maintenance, thereby avoiding damage to the cavity and transmission path, greatly saving manpower and time. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0056] Figure 1 Schematic diagram of the structure of a fixture wafer provided in one embodiment;

[0057] Figure 2 Schematic diagram of the cleaning principle of a jig wafer provided in one embodiment;

[0058] Figure 3 is a schematic structural diagram of a wafer body provided in one embodiment;

[0059] Figure 4 A schematic structural diagram of a wafer adsorption layer provided in one embodiment;

[0060] Figure 5 This is a schematic structural diagram of a foreign matter collection layer provided in one embodiment;

[0061] Figure 6 This is a schematic structural diagram of a cleaning tool provided in one embodiment;

[0062] Figure 7 Schematic diagram of a process for cleaning a cavity device provided in one embodiment;

[0063] Figure 8 Schematic diagram of a wafer transfer process using a jig according to an embodiment of the present invention.

[0064] Explanation of the accompanying symbols: 100- fixture wafer, 110- wafer body, 111- wafer adsorption layer, 110c- electrostatic adsorption area, 112- foreign matter collection layer, 120- electrostatic generation module, 130- first control module, 140- first wireless communication module, 150- image acquisition module, 200- wafer box, 210- box body, 220- foreign matter collection part, 230- second control module, 240- second wireless communication module, 250- display panel, 251- image display interface, 252- function operation interface, 260- exhaust pipe, 270- air intake pipe. DETAILED DESCRIPTION

[0065] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0066] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0067] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, or coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion.

[0068] In addition, the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc., if there is transmission of electrical signals or data between the connected objects.

[0069] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include," "comprising," "having," and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0070] In one embodiment, see Figure 1 , a fixture wafer 100 is provided, including a wafer body 110 and an electrostatic generating module 120.

[0071] The wafer body 110 is a special wafer with a preset size (eg, 12 inches) for cleaning foreign matter, and its material may include but is not limited to resin polymer.

[0072] The static electricity generating module 120 is located on and connected to the wafer body 110. The static electricity generating module 120 can generate static electricity, thereby causing the wafer body 110 connected thereto to have static electricity. As an example, the static electricity generating module 120 can include, but is not limited to, a static electricity generating device.

[0073] See also Figure 2When a statically charged wafer body 110 approaches an uncharged foreign object, electrostatic induction causes the side of the foreign object closest to the charged wafer body 110 to accumulate charges of opposite polarity to the charge carried by the wafer body 110 (while the other side generates an equal amount of charges of the same polarity as the charge carried by the wafer body 110). Because opposite charges attract each other, a phenomenon called "electrostatic attraction" occurs, causing the foreign object to be attached to the wafer body 110.

[0074] When using the jig wafer 100 of this embodiment to clean the cavity equipment, the jig wafer 100 can first be sent to the cavity of the equipment through the robotic arm of the cavity equipment, and then the electrostatic generation module 120 is controlled to generate static charge, so that the wafer body 110 is charged with static charge to absorb foreign matter in the cavity and / or in the transmission path.

[0075] The fixture wafer 100 of this embodiment can utilize the principle of electrostatic adsorption to quickly, safely, and inexpensively clean foreign matter in the cavity (such as on the electrostatic chuck in the cavity) in a cavity environment, while also processing foreign matter in the transmission path. Therefore, the present application can effectively improve the cleaning effect, thereby effectively reducing product defects and improving product yield. In addition, the good cleaning effect also means that during the process, there is no need to frequently open the cavity and / or transmission path for maintenance, thereby avoiding damage to the cavity and transmission path, greatly saving manpower and time.

[0076] Specifically, as an example, the fixture wafer 100 of this embodiment can be used to effectively clean equipment with an electrostatic chuck (ESC). When foreign matter is generated on the surface of the ESC in the cavity of this type of equipment, the foreign matter may cause the pores of the ESC to be blocked, thereby causing abnormalities in the corresponding gas (such as helium), thereby affecting product quality. At the same time, when gas (such as helium) abnormalities occur, an arc may be generated, causing the ESC to break down or burn. Damage to the ESC may cause the position of the substrate to be processed to shift, thereby causing fragmentation.

[0077] After the jig wafer 100 of this embodiment is used to clean it, clogging of the pores of the ESC can be effectively avoided, thereby effectively improving product quality and yield.

[0078] In one embodiment, see Figure 3 The wafer body 110 has a plurality of holes 110a, through which foreign matter can be collected. At this time, foreign matter enters the interior of the wafer body through the holes 110a, which helps to keep the surface of the wafer body 110 clean, thereby effectively preventing the robotic arm that transfers the wafer body 110 from being contaminated by the wafer body 110.

[0079] In one embodiment, see Figure 3 The wafer body 110 includes a wafer adsorption layer 111 and a foreign matter collection layer 112 .

[0080] See also Figure 3 Also see Figure 4 The static electricity generating module 120 is located on the wafer adsorption layer 111 and is connected to the wafer adsorption layer 111 , so that the wafer adsorption layer 111 has static charges, thereby being able to electrostatically adsorb foreign matter.

[0081] See also Figure 3 as well as Figure 5 The foreign matter collection layer 112 is disposed opposite to the wafer adsorption layer 111. Furthermore, the foreign matter collection layer 112 has a plurality of holes 110a. Furthermore, the holes 110a on the foreign matter collection layer 112 are through holes, that is, the holes 110a on the foreign matter collection layer 112 penetrate the foreign matter collection layer 112.

[0082] Also, see Figure 3 There is a preset distance between the foreign matter collection layer 112 and the wafer adsorption layer 111. As an example, the preset distance may be 2 mm to 5 mm.

[0083] At this time, there is a hollow space between the two layers, so that foreign matter can pass through the holes 110a of the foreign matter collection layer 112 and be adsorbed on the wafer adsorption layer 111. At this time, the robot arm can be prevented from directly contacting the wafer adsorption layer 111, preventing foreign matter on the wafer adsorption layer 111 from contaminating the robot arm.

[0084] As an example, the foreign matter collection layer 112 in this embodiment can be integrated with the wafer adsorption layer 111 to enhance the structural stability of the wafer body 110. Of course, the foreign matter collection layer 112 can also be a separate structure from the wafer adsorption layer 111 and assembled together during use, and this embodiment does not limit this.

[0085] Meanwhile, in other embodiments, the configuration of the wafer body 110 is not limited to this. For example, the wafer body 110 may also include only the wafer adsorption layer 111, with the static electricity generating module provided on one side of the wafer adsorption layer 111 and a blind hole provided on the other side that does not penetrate the wafer adsorption layer 111.

[0086] In one embodiment, see Figure 5 , the wafer body 110 has a plurality of electrostatic adsorption areas 110c.

[0087] Meanwhile, the static electricity generating module 120 includes a plurality of static electricity generating units (not shown). Each static electricity generating unit can generate static charge. As an example, each static electricity generating unit can be composed of a small static electricity generating device.

[0088] Each static electricity generating unit is correspondingly connected to an static electricity adsorption area 110 c , so that each static electricity adsorption area 110 c has static charge.

[0089] In this embodiment, the wafer body 110 is divided into multiple electrostatic adsorption areas 110c, and the electrostatic force strength of each area is independently controlled by each electrostatic generating unit. This allows the electrostatic force of each electrostatic adsorption area 110c to be flexibly adjusted according to the distribution of foreign matter. For example, the electrostatic force can be strengthened in specific areas to facilitate the adsorption and removal of foreign matter that is difficult to adsorb.

[0090] In one embodiment, see Figure 5 The wafer body 110 is provided with a positioning hole 110 b. The positioning hole 110 b can be used to position the wafer body 110.

[0091] Specifically, when the wafer body 110 includes a wafer adsorption layer 111 and a foreign matter collection layer 112, the positioning hole 110b can be located in the foreign matter collection layer 112. Furthermore, a positioning structure can be provided on the cleaning component within the chamber device, and the positioning hole cooperates with the positioning structure to position and secure the wafer body 110. For example, a chamber device with an ESC can have an ejector pin on the ESC, and the positioning hole cooperates with the ejector pin to position and secure the wafer body 110.

[0092] In one embodiment, see Figure 4 The fixture wafer 100 further includes a first control module 130. The first control module 130 is located on the wafer body 110 and is connected to the static electricity generating module 120 for controlling the static electricity generating module to generate static charges.

[0093] When the wafer body 110 includes the wafer adsorption layer 111 and the foreign matter collection layer 112 , the first control module 130 may be located on the wafer adsorption layer 111 .

[0094] In this embodiment, the first control module 130 and the static electricity generating module 120 are both disposed on the wafer body 110 , thereby facilitating the control of the static electricity generating module 120 .

[0095] Furthermore, the fixture wafer 100 may also include a first wireless communication module 140, which is also located on the wafer body 110 and connected to the first control module 130, so that the first control module 130 can easily obtain control commands through the first wireless communication module 140.

[0096] When the wafer body 110 includes the wafer adsorption layer 111 and the foreign matter collection layer 112 , the first wireless communication module 140 may also be located on the wafer adsorption layer 111 .

[0097] Of course, this embodiment is not limited thereto, and the fixture wafer 100 may also include a wired communication module so that the first control module 130 can obtain control commands through the wired communication module. In this case, the wired communication module and the external transmission line may be arranged inside the device.

[0098] In one embodiment, see Figure 5 The fixture wafer 100 further includes an image acquisition module 150, which is also located on the wafer body 110 and is used to collect foreign matter information. As an example, the image acquisition module 150 may include a camera.

[0099] When the wafer body 110 includes a wafer adsorption layer 111 and a foreign matter collection layer 112, the image acquisition module 150 can be located on the wafer adsorption layer 111. In this case, an image acquisition avoidance hole 112a can be opened in the foreign matter collection layer 112 so that the image acquisition module 150 can pass through the image acquisition avoidance hole 112a to capture images.

[0100] At the same time, the image acquisition module 150 is connected to the first control module 130, so that the foreign object information can be sent to the first control module 130. The first control module 130 can send the foreign object information to the outside through the first wireless communication module 140 or the wired communication module.

[0101] At this time, the staff can observe the location of the foreign matter in the cavity of the equipment (such as on the surface of the ESC), make relevant judgments (such as whether the foreign matter on the surface of the ESC causes the corresponding gas (such as helium) to be abnormal), and then perform relevant processing according to the judgment (remove the foreign matter or detect the cause of the gas abnormality).

[0102] At the same time, when there is foreign matter, the size of the foreign matter can also be observed. For foreign matter that is large or difficult to adsorb, the electrostatic adsorption force can be enhanced, thereby facilitating adsorption and cleaning.

[0103] At the same time, it can also observe whether there are foreign objects in the transmission path and effectively clean them. Similarly, foreign objects on the robot arm can also be cleaned.

[0104] In one embodiment, see Figure 6 , also provides a cleaning jig for cavity equipment. The cleaning jig includes the jig wafer 100 and a wafer box 200. The wafer box 200 is used to place the jig wafer 100.

[0105] In actual manufacturing processes, process chamber processes are generally divided into two types: one for metal processing and the other for non-metallic processing. To address this, different fixture wafers 100 and corresponding wafer cassettes 200 can be provided for each process. In this case, the fixture wafers 100 and wafer cassettes 200 are not mixed between the two processes to prevent cross contamination.

[0106] In the above embodiment, the electrostatic generating module 120, the first wireless communication module 140, the first control module 130 and the image acquisition module 150 of the fixture wafer 100 are all arranged on the wafer body 100. It can be understood that in other embodiments, this is not a limitation, and the positions of the various modules of the fixture wafer 100 can be flexibly adjusted according to actual needs and process processing conditions.

[0107] In one embodiment, see Figure 6 The wafer box 200 includes a box body 210 and a foreign matter collector 220. The box body 210 has a wafer placement area inside. The wafer placement area is used to store and place the fixture wafer 100.

[0108] The foreign matter collector 220 is located inside the box body 210 . Furthermore, the foreign matter collector 220 is located below the wafer placement area, so as to collect foreign matter adsorbed on the wafer body 110 .

[0109] As an example, the foreign matter collecting member 220 may be provided in the form of a baffle.

[0110] After the fixture wafer 100 completes the adsorption of foreign matter inside the device (in the cavity and / or in the transmission path), it can be transferred out of the cavity by a robotic arm. Then, the fixture wafer 100 is placed in the wafer placement area inside the wafer box 200. The static electricity generating module 120 can then be turned off. At this time, foreign matter will fall into the foreign matter collection piece 220 below the wafer placement area, and will not fall directly on the box body 210 or other components in the box body 210, thereby preventing the box body 210 or other components in the box body 210 from being contaminated.

[0111] In one embodiment, see Figure 6 The wafer cassette 200 further includes an exhaust line 260 and an air intake line 270. Both the exhaust line 260 and the air intake line 270 are connected to the foreign matter collector 220. The exhaust line 260 is used to discharge foreign matter from the foreign matter collector 220. The air intake line 270 is used to purge foreign matter from the jig wafers 100 and / or the foreign matter collector 220.

[0112] The exhaust line 260 may be connected to a vacuum pump or a mechanical pump, etc. When foreign matter falls into the foreign matter collecting member 220 , the vacuum pump or the mechanical pump may be started to effectively discharge the foreign matter through the exhaust line 260 .

[0113] The air inlet line 270 can be connected to a gas source such as nitrogen. When cleaning is required, the gas source can be opened, allowing nitrogen or the like to flow through the air inlet line 270 to purge foreign matter on the jig wafer 100 and / or the foreign matter collector 220, and then the foreign matter is effectively discharged through the exhaust line 260.

[0114] In one embodiment, see Figure 6 The wafer box 200 further includes a second control module 230 and a second wireless communication module 240 .

[0115] As an example, the second control module 230 and the second wireless communication module 240 are both disposed on the box body 210 .

[0116] Specifically, a base 211 may be provided at the bottom of the box body 210. The second control module 230 and the second wireless communication module 240 may be provided on the base 211. Of course, in other embodiments, the second control module 230 and the second wireless communication module 240 may not be provided on the box body 210.

[0117] The second wireless communication module 240 is used to achieve communication between the second control module 230 and the fixture wafer 100. The second control module 230 can control the static electricity generating module 120 of the fixture wafer 100 to generate static charges through the second wireless communication module 240.

[0118] Specifically, the second control module 230 can communicate with the first wireless communication module 140 located on the wafer body 110 through the second wireless communication module 240, and connect to the first control module 130 located on the wafer body 110, thereby sending a control command to the first control module 130, so that the first control module 130 controls the static electricity generating module 120 to generate static electricity according to the control command.

[0119] In one embodiment, see Figure 6 When the fixture wafer 100 is provided with an image acquisition module 150 for acquiring foreign matter information, the wafer box 200 further includes a display panel 250 .

[0120] The display panel 250 is connected to the second control module 230 that is in communication with the jig wafer 100 , thereby communicating with the jig wafer 100 through the second control module 230 .

[0121] Specifically, when the image acquisition module 150 on the fixture wafer 100 captures foreign object information, it can send the foreign object information to the first control module 130. The first control module 130 can then send the foreign object information to the second control module 230 via the first wireless communication module 140 and the second wireless communication module 240. The second control module 230 can then send the foreign object information to the display panel 250, which can then display the foreign object information on the display panel.

[0122] In this embodiment, the display panel 250 not only has an image display interface 251 for displaying images, but also has a function operation interface 252, so that the static electricity generating module 120 and the image acquisition module 150 in the fixture wafer 100 can be operated through the function operation interface. For example, the operator can set the static electricity start time, intensity, or delayed start of the static electricity generating module 120 through the function operation interface.

[0123] In one embodiment, the wafer box 200 further includes a charging module that can be used to charge the static electricity generating module 120 of the wafer fixture 100 , thereby enabling the static electricity generating module 120 to be used in a long-term cycle.

[0124] Furthermore, when the fixture wafer 100 further includes a first control module 130 and the wafer box 200 further includes a second control module 230 , etc., the charging module can also charge the first control module 130 and the second control module 230 , etc.

[0125] In one embodiment, a method for cleaning a cavity device is also provided. Figure 7 ,include:

[0126] Step S100: The fixture wafer is transferred to the cavity of the device by a robotic arm. Figure 8 ;

[0127] In step S400 , the static electricity generating module is controlled to generate static charges, so that the wafer body is charged with static charges to absorb foreign matter in the cavity and / or in the transmission path.

[0128] In one embodiment, before step S400, the method further includes:

[0129] Step S200: collecting information about foreign matter in the cavity and / or in the transmission path.

[0130] Step S400 includes:

[0131] According to the foreign matter information, the switch of the static electricity generating module and / or the strength of the static electricity generated by the static electricity generating module are controlled.

[0132] Specifically, in step S200 , the image acquisition module 150 of the jig wafer 100 may be used to acquire information about foreign matter in the cavity and / or in the transmission path.

[0133] Furthermore, after step S200, the following steps may be further included:

[0134] Step S300: display foreign object information.

[0135] As an example, the foreign matter information may be displayed on the display panel 250 of the wafer box 200.

[0136] In step S400, the static electricity generating module 120 can be controlled to be turned off when there is no foreign object, and to be turned on when there is a foreign object. Furthermore, when there is a foreign object, the strength of the static charge generated by the static electricity generating module 120 can be controlled based on the location and size of the foreign object, thereby controlling the strength of the electrostatic adsorption force.

[0137] In one embodiment, the wafer body 110 has a plurality of electrostatic adsorption areas 110 c. The electrostatic generation module 120 includes a plurality of electrostatic generation units. Each electrostatic generation unit is connected to a corresponding electrostatic adsorption area 110 c.

[0138] At this time, step S400 includes:

[0139] According to the foreign matter information of each electrostatic adsorption area, the switch of each electrostatic generating unit and / or the strength of the electrostatic charge generated by each electrostatic generating unit are controlled.

[0140] In one embodiment, after step S400, the method further includes:

[0141] Step S500: Using a robotic arm, the fixture wafer is transferred from the cavity to the wafer placement area in the wafer box;

[0142] In step S600 , the static electricity generating module is controlled to be turned off so that foreign matter adsorbed by the wafer body falls to a foreign matter collecting member located inside the wafer box and below the wafer placement area.

[0143] In one embodiment, the wafer box 200 further includes an exhaust line 260 and an intake line 270 , and after step S600 , further includes:

[0144] Open the exhaust pipe to discharge foreign matter from the foreign matter collection unit;

[0145] Open the air inlet line to blow out foreign matter from the foreign matter collector.

[0146] In the description of this specification, reference to the terms "some embodiments," "other embodiments," etc., means that a specific feature, structure, material, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0147] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0148] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A fixture wafer, characterized in that: include: A wafer body having a plurality of holes for collecting foreign matter; an electrostatic generating module, located on the wafer body and connected to the wafer body, for generating electrostatic charge so that the wafer body has electrostatic charge; Among them, the wafer body includes a wafer adsorption layer and a foreign matter collection layer arranged relatively to each other, the electrostatic generation module is located on the wafer adsorption layer and connected to the wafer adsorption layer, the foreign matter collection layer has the several holes, the several holes are through holes, and there is a gap of a preset distance between the foreign matter collection layer and the wafer adsorption layer.

2. The fixture wafer according to claim 1, characterized in that: The wafer body has a plurality of electrostatic adsorption areas; The static electricity generating module includes a plurality of static electricity generating units, and each of the static electricity generating units is correspondingly connected to one of the static electricity adsorption areas.

3. The fixture wafer according to claim 1, characterized in that: The wafer body is provided with a positioning hole, and the positioning hole is used to position the wafer body.

4. The fixture wafer according to claim 1, wherein: The fixture wafer further includes: The first control module is located on the wafer body and connected to the static electricity generating module, and is used to control the static electricity generating module to generate static charges.

5. The fixture wafer according to claim 4, characterized in that: The fixture wafer further includes: The image acquisition module is located on the wafer body and connected to the first control module, and is used for acquiring foreign matter information and sending the foreign matter information to the first control module.

6. The fixture wafer according to claim 4, characterized in that: The fixture wafer further includes: The first wireless communication module is located on the wafer body and connected to the first control module.

7. A cleaning jig for cavity equipment, characterized in that: include: The fixture wafer according to any one of claims 1 to 6; The wafer box is used to place the fixture wafer.

8. The cleaning tool according to claim 7, characterized in that: The wafer box includes: The box body has a wafer placement area inside, and the wafer placement area is used to accommodate and place the fixture wafer; A foreign matter collecting member is located inside the box body, and the foreign matter collecting member is located below the wafer placement area and is used to collect foreign matter adsorbed by the wafer body.

9. The cleaning tool according to claim 8, characterized in that: The wafer box further includes: an exhaust pipe, connected to the foreign matter collecting member, and used for discharging foreign matter on the foreign matter collecting member; An air inlet pipeline is connected to the foreign matter collecting component and is used to purge foreign matter on the fixture wafer and / or the foreign matter collecting component.

10. The cleaning tool according to claim 7, characterized in that: The wafer box further includes: a second control module, configured to control the static electricity generating module to generate static charges; The second wireless communication module is connected to the second control module and is used to realize the communication connection between the second control module and the fixture wafer.

11. The cleaning tool according to claim 10, characterized in that: The wafer box further includes a display panel connected to the second control module and configured to display foreign matter information, the foreign matter information being acquired by an image acquisition module located on the fixture wafer.

12. The cleaning tool according to claim 7, characterized in that: The wafer box further includes a charging module, and the charging module is used to charge the static electricity generating module of the fixture wafer.

13. A method for cleaning a cavity device, characterized in that: include: Transferring the fixture wafer according to any one of claims 1 to 6 into the cavity of the device by a robotic arm; The static electricity generating module is controlled to generate static charges, so that the wafer body is charged with static charges to absorb foreign objects in the cavity and / or in the transmission path.

14. The cleaning method according to claim 13, characterized in that: Before controlling the static electricity generating module to generate static charges, the method further includes: collecting information about foreign matter in the cavity and / or in the transmission path; The controlling the static electricity generating module to generate static charges includes: According to the foreign object information, the switch of the static electricity generating module and / or the strength of the static electricity generated by the static electricity generating module are controlled.

15. The cleaning method according to claim 14, characterized in that: The wafer body has a plurality of electrostatic adsorption areas, and the electrostatic generation module includes a plurality of electrostatic generation units, each of which is connected to a corresponding electrostatic adsorption area; The controlling of the switch of the static electricity generating module and / or the strength of the static electricity generated by the static electricity generating module according to the foreign object information includes: According to the foreign matter information of each electrostatic adsorption area, the switch of each electrostatic generating unit and / or the strength of the electrostatic charge generated by each electrostatic generating unit are controlled.

16. The cleaning method according to claim 14, characterized in that After collecting the foreign matter information in the cavity and / or in the transmission path, the method further includes: The foreign object information is displayed.

17. The cleaning method according to claim 13, characterized in that: After the static electricity generating module is controlled to generate static charges, the method further includes: The fixture wafer is transferred from the cavity to the wafer placement area in the wafer box by a robotic arm; The static electricity generating module is controlled to be closed so that the foreign matter adsorbed by the wafer body falls to a foreign matter collecting member. The foreign matter collecting member is located inside the wafer box and below the wafer placement area.

18. The cleaning method according to claim 17, characterized in that: The wafer box further includes an exhaust pipe and an air intake pipe. After controlling the static electricity generating module to be turned off, the wafer box further includes: Opening the exhaust pipe to discharge foreign matter from the foreign matter collecting member; Open the air intake line to purge foreign matter from the foreign matter collecting member.

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