Wafer polishing device and wafer polishing method

Abstract

The present invention provides a wafer polishing device and a wafer polishing method suitable for polishing wafers. The wafer polishing device includes a polishing carrier, a turntable, a database, an input unit, and a control unit. The polishing carrier is suitable for holding the wafer. The turntable is arranged corresponding to the polishing carrier. The turntable is suitable for placing a polishing pad thereon so that the polishing pad faces the wafer. The control unit is connected to the polishing carrier, the turntable, the database, and the input unit. The database stores a polishing parameter array. The polishing parameter array includes a first rotational speed corresponding to the polishing carrier, a second rotational speed corresponding to the turntable, and wafer polishing data. The first rotational speed is N1 rpm. The second rotational speed is N2 rpm, where: 30 ≤ N1 ≤ 75 or 10 ≤ N2 ≤ 60; and N1 / N2 = Q1, N2 / N1 = Q2, and neither Q1 nor Q2 is a natural number.

Description

Technical Field

[0001] The present invention relates to a wafer polishing device and a wafer polishing method, and in particular to a wafer polishing device and a wafer polishing method having a corresponding rotational speed relationship. Background Art

[0002] Scratches typically occur during wafer polishing, often through optimization and adjustment of the polishing slurry ratio, polishing removal volume, and the choice of abrasive particles and / or polishing pads. However, these methods often rely on hardware adjustments. Therefore, the availability of alternative methods to improve wafer polishing quality has become a pressing research topic. Summary of the Invention

[0003] The present invention is directed to a wafer polishing device or a wafer polishing method, which can ensure that the polished wafer has better quality.

[0004] According to an embodiment of the present invention, a wafer polishing apparatus is suitable for polishing wafers. The wafer polishing apparatus includes a polishing carrier, a turntable, a database, an input unit, and a control unit. The polishing carrier is suitable for holding the wafer. The turntable is arranged corresponding to the polishing carrier. The turntable is suitable for placing a polishing pad thereon so that the polishing pad surface faces the wafer. The control unit is signal-connected to the polishing carrier, the turntable, the database, and the input unit. The database stores at least one polishing parameter array. The polishing parameter array includes a first rotational speed corresponding to the polishing carrier, a second rotational speed corresponding to the turntable, and wafer polishing data corresponding to the first rotational speed and the second rotational speed. The first rotational speed is N1 rpm. The second rotational speed is N2 rpm. The first rotational speed and the second rotational speed have the following relationship: 30 ≤ (less than or equal to) N1 ≤ (less than or equal to) 75 or 10 ≤ (less than or equal to) N2 ≤ (less than or equal to) 60; and N1 / N2 = Q1, N2 / N1 = Q2, and neither Q1 nor Q2 is a natural number.

[0005] According to one embodiment of the present invention, the wafer polishing data includes one of the following items or a combination thereof: the polishing liquid flow rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad; the estimated processing time corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad; or the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, wherein the area repetition rate is: the ratio of the track area of ​​the contact between the single wafer and the polishing pad to the path area of ​​the single wafer during the polishing cycle time.

[0006] According to an embodiment of the present invention, the input unit is adapted to receive at least one set of input parameters, and the input parameters include: the diameter of the wafer; the size of the polishing pad's disk surface; the thickness of the wafer; and the expected polishing amount for polishing the wafer.

[0007] According to an embodiment of the present invention, the database stores a plurality of polishing parameter arrays, and the control unit is adapted to compare the input parameters with the plurality of polishing parameter arrays in the database to polish the wafer.

[0008] According to an embodiment of the present invention, the first rotational speed or the second rotational speed further has the following relationship: at least one of Q1 or Q2 is a finite decimal with more than 3 digits or an infinite decimal.

[0009] According to an embodiment of the present invention, the first rotational speed or the second rotational speed further has the following relationship: the greatest common divisor of N1 and N2 is greater than or equal to 5.

[0010] According to one embodiment of the present invention, the wafer polishing data includes the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, and the area repetition rate is less than or equal to 40%, wherein the area repetition rate is: the ratio of the track area of ​​the single wafer in contact with the polishing pad to the path area of ​​the single wafer during the polishing cycle time.

[0011] According to an embodiment of the present invention, a wafer polishing method includes the following steps: providing a wafer polishing device, which includes: a polishing carrier and a turntable arranged corresponding to the polishing carrier; placing the wafer on the polishing carrier, placing the polishing pad on the turntable, and making the disk surface of the polishing pad face the wafer; and rotating the polishing carrier in a first direction and the turntable in a second direction to polish the wafer fixed on the polishing carrier by means of the polishing pad, wherein: the polishing carrier has a first rotational speed, which is N1 rpm; the turntable has a second rotational speed, which is N2 rpm; and the first rotational speed or the second rotational speed has the following relationship: 30≤(less than or equal to)N1≤(less than or equal to)75 or 10≤(less than or equal to)N2≤(less than or equal to)60; and N1 / N2=Q1, N2 / N1=Q2, and both Q1 and Q2 are not natural numbers.

[0012] According to one embodiment of the present invention, the wafer polishing device further includes an input unit and a database, wherein the database stores wafer polishing data corresponding to a first rotational speed of the polishing carrier and a second rotational speed of the turntable, and the wafer polishing method further includes the following steps: inputting polishing specifications for the wafer through the input unit; and estimating the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad by comparing the polishing specifications with the wafer polishing data in the database.

[0013] According to one embodiment of the present invention, the first rotational speed or the second rotational speed also has the following relationship: at least one of Q1 or Q2 is a finite decimal or an infinite decimal with more than 3 digits; the first rotational speed or the second rotational speed also has the following relationship: the greatest common divisor of N1 and N2 is greater than or equal to 5; and / or the wafer polishing data includes the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, and the area repetition rate is less than or equal to 40%, wherein the area repetition rate is: the ratio of the track area of ​​the single wafer in contact with the polishing pad to the path area of ​​the single wafer during the polishing cycle time.

[0014] Based on the above, the present invention can enable the wafer polishing device or wafer polishing method to achieve better quality of the polished wafer at least by virtue of the relationship between the first rotational speed and the second rotational speed. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1A is a partial perspective schematic diagram of a wafer polishing apparatus according to an embodiment of the present invention;

[0016] Figure 1B is a numerical table according to an embodiment of the present invention;

[0017] Figure 1C is a numerical table according to an embodiment of the present invention;

[0018] Figures 2A to 2D It is the relative movement trajectory diagram of each test case.

[0019] Description of Reference Numerals

[0020] 100: wafer polishing device;

[0021] 110: polishing carrier plate;

[0022] 100a: bearing surface;

[0023] 111: actuator;

[0024] D1: first direction;

[0025] 910: chip;

[0026] 120: turntable;

[0027] 920: polishing pad;

[0028] 920a: disk;

[0029] 121: actuator;

[0030] D2: second direction;

[0031] 130: control unit;

[0032] 140: database;

[0033] 150: input unit;

[0034] 160: polishing liquid supply unit;

[0035] 162: Liquid valve;

[0036] 169: polishing fluid;

[0037] 171, 172, 174, 175, 176: signal lines. DETAILED DESCRIPTION

[0038] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0039] Please refer to Figure 1A The wafer polishing apparatus 100 includes a polishing carrier 110, a turntable 120, a database 140, an input unit 150, and a control unit 130. The wafer polishing apparatus 100 is adapted to polish (i.e., polish) a wafer 910. The polishing carrier 110 is adapted to hold the wafer 910. The turntable 120 is disposed corresponding to the polishing carrier 110. The turntable 120 is adapted to place a polishing pad 920 thereon (herein, the turntable 120). At least when polishing the wafer 910, the disk surface 920a of the polishing pad 920 is adapted to face the wafer 910.

[0040] In this embodiment, the wafer polishing apparatus 100 may further include a polishing liquid supply unit 160. The polishing liquid supply unit 160 may include a corresponding liquid valve 162. The liquid valve 162 may control the supply amount and / or flow rate of the polishing liquid 169.

[0041] In this embodiment, the control unit 130 can be connected to at least one of the polishing carrier 110, the turntable 120, the database 140, the input unit 150 and / or the polishing liquid supply unit 160 by wired signal transmission via signal lines 171, 172, 174, 175, and 176, but the present invention is not limited thereto. In one embodiment, the control unit 130 can be connected to at least one of the polishing carrier 110, the turntable 120, the database 140, the input unit 150 and / or the polishing liquid supply unit 160 by wireless signal transmission. In other words, the signal connection mentioned in the present invention can generally refer to a connection method of wired signal transmission or wireless signal transmission. In addition, the present invention does not limit all signal connection methods to be the same or different.

[0042] In one embodiment, the polishing carrier 110 may include an actuator 111. The control unit 130 may be connected to the actuator 111 of the polishing carrier 110 via a signal to drive the entire or a portion of the polishing carrier 110 to move and / or rotate in a corresponding direction. In one embodiment, the actuator 111 may include a power supply, a motor, a belt, a gear, and other related components, which are not limited in the present invention. The related components may include, for example, a communication component, a power component, a shock absorbing component, a positioning component, or a sensing component, which are not limited in the present invention.

[0043] In one embodiment, the polishing pad 920 may be placed or fixed on a turntable 120. The turntable 120 may include an actuator 121. The control unit 130 may be connected to the actuator 121 of the turntable 120 via a signal to drive the turntable 120 or the polishing pad 920 on the turntable 120 to rotate in a corresponding direction. In one embodiment, the actuator 121 of the turntable 120 may be the same as or similar to the actuator 111 of the polishing platen 110, but the present invention is not limited thereto.

[0044] In this embodiment, the control unit 130 may include corresponding hardware or software. For example, the control unit 130 may include a computer, a calculator, a corresponding calculation program, a corresponding logic judgment program, or a platform suitable for performing Advanced Process Control (APC), but the present invention is not limited thereto.

[0045] In this embodiment, the input unit 150 is, for example, a mouse, keyboard, or touch panel, but the present invention is not limited thereto. In one embodiment, the input unit 150 may include a virtual input unit 150. For example, the input unit 150 may include a signal receiving component (e.g., a communication chip, a communication antenna, and / or a communication port), and parameters or commands may be transmitted to the control unit 130 via remote control via the input unit 150.

[0046] In this embodiment, database 140 includes, for example, a memory, a hard disk, a disk array, a cloud system, and / or other electronic components or devices capable of temporarily or permanently storing data. The aforementioned relevant data may include at least one polishing parameter array. The polishing parameter array will be described in detail later.

[0047] In this embodiment, a method for polishing a wafer 910 using the wafer polishing apparatus 100 is exemplified as follows. The following steps are performed in any order: a polishing pad 920 is placed on or secured to a turntable 120; a wafer 910 is placed on the supporting surface 100a of the polishing platen 110, and the wafer 910 is secured to the polishing platen 110. Then, the following steps are performed in any order: the polishing pad 920 is positioned so that the surface 920a of the polishing pad 920 faces the wafer 910 on the polishing platen 110, thereby contacting the polishing pad 920; the polishing platen 110 and / or the wafer 910 thereon is rotated in a first direction D1; and the turntable 120 or the polishing pad 920 corresponding thereto is rotated in a second direction D2.

[0048] In this embodiment, the first direction D1 of rotation of the polishing platen 110 / wafer 910 may be opposite to the second direction D2 of rotation of the turntable 120 / polishing pad 920. For example, one of the first direction D1 and the second direction D2 may be clockwise, and the other of the first direction D1 and the second direction D2 may be counterclockwise.

[0049] In this embodiment, the control unit 130 can make the polishing carrier 110 and / or the wafer 910 located thereon (here: polishing carrier 110) have a corresponding first rotational speed based on the polishing parameter array in the database 140, and make the turntable 120 or the polishing pad 920 corresponding thereto (here: turntable 120) have a corresponding second rotational speed.

[0050] Please refer to Figure 1A and Figure 1BThe polishing parameter array includes a first rotational speed corresponding to the polishing platen 110 / wafer 910, a second rotational speed corresponding to the turntable 120 / polishing pad 920, and wafer polishing data corresponding to the first and second rotational speeds. The first rotational speed is N1 rounds per minute (rpm), the second rotational speed is N2 rpm, and the first rotational speed or the second rotational speed has the following relationship: (1) 30≤N1≤75 or 10≤N2≤60; and (2) N1 / N2=Q1, N2 / N1=Q2, where Q1 and Q2 are not natural numbers.

[0051] A set of polishing parameter arrays may include a corresponding first rotation speed, a corresponding second rotation speed, and corresponding wafer polishing data. Figure 1B For example, the database can store multiple groups (such as group i) of polishing parameter arrays. Figure 1B In the figure, (1) represents the value corresponding to the first group, (2) represents the value corresponding to the second group, and (i) represents the value corresponding to the i-th group.

[0052] In one embodiment, 30≤N1≤75 and / or 10≤N2≤60 are more consistent with the machine setting range of the wafer polishing apparatus 100 and / or are easier to implement.

[0053] In one embodiment, the relationship between the first rotational speed and the second rotational speed can be used to improve the polishing quality of the wafer 910 (eg, to reduce the scratching problem during polishing, but not limited to).

[0054] In one embodiment, the first rotational speed or the second rotational speed may further have the following relationship: at least one of Q1 or Q2 is a finite decimal number with at least 3 decimal places; or, alternatively, a finite decimal number with more than 3 decimal places. That is, in Q1 or Q2, at least the value of the Mth digit after the decimal point is not 0 (i.e., can be any natural number between 1 and 9), where the value of M is a natural number greater than or equal to 3.

[0055] In one embodiment, the first rotational speed or the second rotational speed may also have the following relationship: Q1 or Q2 is an infinite decimal.

[0056] In one embodiment, the first rotational speed or the second rotational speed may further have the following relationship: if N1 and N2 are integers, then the greatest common divisor (highest common factor) of N1 and N2 is greater than or equal to 5.

[0057] In this embodiment, the wafer polishing data may include the polishing liquid flow rate corresponding to the first rotation speed and / or the second rotation speed.

[0058] In this embodiment, the wafer polishing data may include an estimated processing time corresponding to the first rotation speed and / or the second rotation speed.

[0059] In this embodiment, the wafer polishing data may include an area repetition rate corresponding to the first rotation speed and / or the second rotation speed.

[0060] In one embodiment, the wafer polishing data may include at least one of the polishing liquid flow rate, the estimated processing time, and the area repetition rate, or a combination thereof.

[0061] In one embodiment, the wafer polishing data may also include a polishing amount. In one embodiment, the polishing amount may be related to the first rotational speed, the second rotational speed, and the estimated processing time and polishing liquid flow rate corresponding thereto (here, the first rotational speed and the second rotational speed). Therefore, the wafer polishing data can be obtained or inferred from previous actual experiments or processing data (e.g., by interpolating or extrapolating existing data).

[0062] In one embodiment, during a polishing cycle, the ratio of the contact area of ​​the wafer 910 and the polishing pad 920 to the travel area of ​​the wafer 910 may be an area repetition rate, and the area repetition rate is less than or equal to 40%. The area repetition rate is described in detail below.

[0063] For example, since wafer 910 itself has a certain area, when wafer 910 and polishing pad 920 are moved relative to each other, the area where wafer 910 contacts polishing pad 920 during movement can be used to define a corresponding area. This area can be expressed as the "contact track area."

[0064] For example, if (i.e., one hypothetical scenario) the trajectory of wafer 910 relative to polishing pad 920 is a straight line, its "contact track area" is roughly calculated as: the path of a point on wafer 910 (e.g., the center of a circle or a specific point on the edge) multiplied by the wafer area. In other words, under this hypothetical scenario, the product is roughly the maximum value of the "contact track area." Alternatively, under this hypothetical scenario, the polished area can be considered completely non-repetitive.

[0065] For example, if (i.e., one hypothetical situation) the wafer 910 has a corresponding rotational speed in one direction (e.g., a first rotational speed in a first direction D1) and the polishing pad 920 has a corresponding rotational speed in another direction (e.g., a second rotational speed in a second direction D2), causing relative movement and / or rotation between the wafer 910 and the polishing pad 920, the difference between the first and second rotational speeds may often result in a dense or complex distribution of movement paths of the wafer 910 relative to the polishing pad 920. In other words, a region of the polishing pad 920 may be in contact with the wafer 910 at one time, then may not be in contact with the wafer 910 at a second time after the first time, and then may be back in contact with the wafer 910 at a third time after the second time. Simply put, the regions of the wafer 910 and the polishing pad 920 in contact may overlap (partially or completely) at different times. In this way, after the wafer 910 completes a cycle of track movement on the polishing pad 920, the following calculation can be performed: "contact track area" / (center path × wafer area), which can estimate the area repetition rate of the wafer 910 during the polishing process.

[0066] If (i.e., one of the hypothetical conditions) the aforementioned area repetition rate is higher, it may indicate that the polishing pad 920 is experiencing greater wear in a specific area. Therefore, if (i.e., one of the hypothetical conditions) the "contact track area" is closer to the area of ​​the polishing pad 920 (e.g., indicating a usage rate of the polishing pad 920 close to 100%) and the area repetition rate is lower (e.g., indicating that the contact area is not repeated), it can be considered that the wear and / or usage of the polishing pad 920 is more uniform.

[0067] In one embodiment, the contact trajectory and / or "contact trajectory area" corresponding to the contact between the wafer 910 and the polishing pad 920 can be simulated or estimated using the first rotational speed, the second rotational speed, and their corresponding rotational directions. For example, the contact trajectory, "contact trajectory area," and / or the corresponding area repetition rate between the wafer 910 and the polishing pad 920 can be simulated or estimated using coordinates, formulas, numerical calculations, and / or other suitable methods. However, it should be noted that the present invention is not limited to the method for simulating or estimating the area repetition rate.

[0068] In this embodiment, it is suitable to input at least one set of input parameters via the input unit 150. Figure 1C As shown, the input parameters may include the diameter of the wafer 910 , the size of the disk surface 920 a of the polishing pad 920 , the thickness of the wafer 910 , the expected polishing amount of the wafer 910 , and / or other polishing specifications for polishing the wafer 910 .

[0069] In one embodiment, the control unit 130 is adapted to compare the input parameters with one or more polishing parameter arrays in the database 140 to polish the wafer 910 .

[0070] For example, the polishing liquid flow rate and / or the corresponding processing time corresponding to the first rotational speed and the second rotational speed can be output based on the historical data of the polishing amount in the wafer polishing data, and compared with the input parameters so that the control unit 130 can determine or select the parameter range suitable for polishing.

[0071] It is worth noting that if the above-mentioned numerical values ​​are reasonably proportionally enlarged or reduced, or have slight errors or adjustments based on actual machine conditions, as understood by those skilled in the art to which the present invention pertains, they can still be within the range of equality reasonably interpreted by the present invention. For example, if a speed parameter is 3600 rpm or 1 rpm, it can still be within the range of equality of a speed parameter of 60 rpm. For another example, if a speed parameter is 3601 rpm, 3605 rpm, or 3610 rpm, but the aforementioned speed parameters are compared with a speed parameter of 60 rpm, if they achieve substantially the same function and produce substantially the same effect in substantially the same manner, they can still be within the range of equality of a speed parameter of 60 rpm.

[0072] The following test example specifically illustrates the relative movement trajectory of a point on the edge of the wafer on the surface of the polishing pad (hereinafter referred to as the relative movement trajectory diagram) when the rotation direction of the polishing carrier / wafer is opposite to the rotation direction of the turntable / polishing pad, and under the corresponding first rotation speed and the corresponding second rotation speed. Figures 2A to 2D In the relative movement trajectory diagram, the thick black solid line (with a roughly circular outline) represents the range of the polishing pad's disk surface, a black dot within the thick black solid line (approximately at the center of the thick black solid line) represents the center of the polishing pad's disk surface, a thin black solid line within the thick black solid line (with a roughly circular outline) represents the range of the polishing carrier's support surface in the initial state (i.e., at the start of polishing), a black dot within the thin black solid line (approximately at the center of the thin black solid line) represents the center of the polishing carrier's support surface in the initial state, a light black solid line within the thin black solid line (with a roughly circular outline) represents the range of the wafer in the initial state, a light black dot within the light black solid line (approximately at the center of the light black solid line) represents the center of the wafer in the initial state, and the densely dotted line represents the relative movement trajectory of a point on the wafer's edge on the polishing pad's disk surface, where the aforementioned "point on the wafer's edge" refers to the point where the wafer's edge is closest to the edge of the support surface in the initial state. However, these test examples are not to be construed as limiting the scope of the present invention in any sense.

[0073] In the description of the subsequent test examples, for clarity, the first speed may be represented by N1, the second speed may be represented by N2, the first speed / second speed may be represented by Q1, and the second speed / first speed may be represented by Q2. It should be understood that the values ​​of N1, N2, Q1, and / or Q2 may vary depending on the test example. In addition, when further calculating and / or comparing Q1 and Q2 (e.g., finding their quotient, greatest common factor, or other possible derivative values), the first speed and the second speed must first be converted to the same unit for subsequent numerical calculations.

[0074] Figure 2A This is the relative movement trajectory diagram of [Test Example 1A]. Figure 2B This is the relative movement trajectory diagram of [Test Example 1B]. Figure 2C This is the relative movement trajectory diagram of [Test Example 1C]. Figure 2D This is the relative movement trajectory diagram of [Test Case 1D].

[0075] Test Examples 1A through 1D polished wafers at different first and second rotational speeds, with the polishing platen / wafer rotating in the opposite direction to the turntable / polishing pad. The corresponding first and second rotational speeds for Test Examples 1A through 1D, and their corresponding relationships, are shown in Table 1. The results for a single wafer from each test example after polishing under the conditions described in Table 1 are shown in Table 2.

[0076] [Table 1]

[0077]

[0078] [Table 2]

[0079] Test Case Single chip area repetition rate Period (seconds) Scratch defect rate 1A About 11% Short (about 6.02) About 9.5% 1B About 38% Medium (about 60.1) About 1.3% 1C About 95% Length (about 120 cm) About 13.2% 1D About 72% Slightly longer (approximately 80 cm) About 8.4%

[0080] As shown in [Table 1], [Table 2] and Figure 2A As shown, in [Test Example 1A], the corresponding Q1 and Q2 are finite decimals with (inclusive) 2 or less digits. Moreover, the greatest common factor of N1 and N2 is 10. Therefore, although the area repetition rate may be low, the path time of one cycle is short. In this way, polishing may be continuously performed on a repeated path per unit time, which may cause uneven use of the polishing pad and correspondingly increase the scratch rate of the polished wafer. In other words, if the condition that "at least one of Q1 or Q2 is a decimal with at least 3 digits" is not met, the scratch ratio may be high due to the short cycle.

[0081] As shown in [Table 1], [Table 2] and Figure 2BAs shown, in [Test Example 1B], the corresponding Q1 and Q2 are both infinite decimals. Moreover, the greatest common factor of N1 and N2 is 5. Therefore, although the area repetition rate is higher than that of [Test Example 1A], because the path of one cycle is longer, the number of times the same path is repeated per unit time can be lower, and the use of the polishing pad may also be relatively uniform. In this way, the scratch rate of the polished wafer can be correspondingly lower. That is to say, in [Test Example 1B], it satisfies the conditions of "at least one of Q1 or Q2 is a finite decimal or an infinite decimal with at least 3 decimal digits; and the greatest common factor of N1 and N2 is greater than or equal to 5", so its period and / or single-chip area repetition rate can be more moderate, and the scratch ratio can be the lowest (compare in [Test Example 1A]-[Test Example 1D]).

[0082] As shown in [Table 1], [Table 2] and Figure 2C As shown, in [Test Example 1C], the corresponding Q1 and Q2 are both infinite decimals. Moreover, the greatest common factor of N1 and N2 is 1 (i.e., N1 and N2 are mutually prime). In addition, its cycle time for wafer polishing is the longest (compared in [Test Example 1A]-[Test Example 1D]), so the number of times it repeats the same path per unit time may also be the lowest (compared in [Test Example 1A]-[Test Example 1D]). However, although its path is not repeated or the repetition rate is low, the area repetition rate may be greatly increased due to the high path density, which may cause the wafer to be continuously polished in the repeated area, resulting in an increase in the scratch rate (compared in [Test Example 1A]-[Test Example 1D]). In other words, in [Test Example 1C], it does not meet the conditions of "at least one of Q1 or Q2 is a finite decimal or infinite decimal with at least 3 decimal digits; and, the greatest common factor is greater than or equal to 5". If the above conditions are not met, the single-chip area repetition rate may be large and the scratch ratio may also be high.

[0083] As shown in [Table 1], [Table 2] and Figure 2DAs shown, in [Test Example 1D], the corresponding Q1 and Q2 are both infinite decimals. In addition, the greatest common factor of N1 and N2 is 2. Therefore, compared to [Test Example 1B], [Test Example 1D] may have a longer path in a cycle, resulting in a relatively lower number of times the same path is repeated per unit time. However, this may also lead to an increase in path density, resulting in a higher area repetition rate. This may cause the wafer to be polished in repeated areas, which in turn increases the scratch rate (compare [Test Example 1A], [Test Example 1B], and [Test Example 1D]). In other words, in [Test Example 1D], it meets the conditions of "at least one of Q1 or Q2 is a finite decimal or a repeating decimal with at least 3 decimal digits; and the greatest common factor is less than 5." If the above conditions are not met, the single-chip area repetition rate may be higher and the scratch rate may also be higher.

[0084] In summary, the present invention at least maximizes the cycle time of the path and minimizes the area repetition rate of the single chip by utilizing the relative relationship between the first rotational speed and the second rotational speed in the chip polishing device or the chip polishing method, so that the polished chip can have better quality.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer polishing device, characterized in that: Suitable for polishing wafers, and comprising: a polishing carrier, adapted to hold the wafer; a turntable, disposed corresponding to the polishing carrier plate and adapted to place a polishing pad thereon so that a disk surface of the polishing pad faces the wafer; database; input unit; and A control unit is signal-connected to the polishing carrier, the turntable, the database, and the input unit, wherein the database stores at least one set of polishing parameter arrays, the polishing parameter arrays including: a first rotational speed corresponding to the polishing carrier; corresponding to a second rotational speed of the turntable; and Wafer polishing data corresponding to the first rotational speed and the second rotational speed, wherein the first rotational speed is N1 rpm, the second rotational speed is N2 rpm, and the first rotational speed and the second rotational speed have the following relationship: 30≤N1≤75, 10≤N2≤60; N1 / N2=Q1, N2 / N1=Q2, Q1 and Q2 are not natural numbers; At least one of Q1 or Q2 is a finite or infinite decimal number with more than three digits; The greatest common factor of N1 and N2 is greater than or equal to 5; and The wafer polishing data includes the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, and the area repetition rate is less than or equal to 40%, wherein the area repetition rate is: the ratio of the track area of ​​the single wafer in contact with the polishing pad to the path area of ​​the single wafer during the polishing cycle time.

2. The wafer polishing device according to claim 1, wherein The wafer polishing data further includes one or a combination of the following: The polishing liquid flow rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad; or The first rotational speed of the polishing platen and the second rotational speed of the polishing pad correspond to an estimated processing time.

3. The wafer polishing device according to claim 1, wherein The input unit is adapted to be input with at least one set of input parameters, and the input parameters include: the diameter of the wafer; The size of the disk surface of the polishing pad; the thickness of the wafer; and The wafer is polished an estimated amount.

4. The wafer polishing device according to claim 3, wherein The database stores a plurality of polishing parameter arrays, and the control unit is adapted to compare the input parameters with the plurality of polishing parameter arrays in the database to polish the wafer.

5. A wafer polishing method, characterized in that: include: A wafer polishing apparatus is provided, comprising: Polishing carrier plate; a turntable, arranged corresponding to the polishing carrier; and a database storing wafer polishing data corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the turntable; placing a wafer on the polishing carrier, placing a polishing pad on the turntable, and making the disk surface of the polishing pad face the wafer; and The polishing plate is rotated in a first direction and the turntable is rotated in a second direction to polish the wafer fixed on the polishing plate by the polishing pad, wherein: The polishing carrier has the first rotation speed, which is N1 revolutions per minute (rpm); The turntable has the second rotation speed, which is N2 rpm; and The first rotational speed and the second rotational speed have the following relationship: 30≤N1≤75, 1 0≤N2≤60; N1 / N2=Q1, N2 / N1=Q2, Q1 and Q2 are not natural numbers; At least one of Q1 or Q2 is a finite or infinite decimal number with more than three digits; The greatest common factor of N1 and N2 is greater than or equal to 5; and The wafer polishing data includes the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, and the area repetition rate is less than or equal to 40%, wherein the area repetition rate is: the ratio of the track area of ​​the single wafer in contact with the polishing pad to the path area of ​​the single wafer during the polishing cycle time.

6. The wafer polishing method according to claim 5, wherein: The wafer polishing apparatus further includes an input unit, and the wafer polishing method further includes: inputting polishing specifications for the wafer via the input unit; and The first rotational speed of the polishing platen and the second rotational speed of the polishing pad are estimated by comparing the polishing specification with the wafer polishing data in the database.

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