High frequency module and communication device

Abstract

In each of a plurality of communication bands, both low loss and good attenuation characteristics can be achieved. A high-frequency module (1) has a plurality of power amplifiers, an external connection terminal (4), a filter (5), and a switch (6). The plurality of power amplifiers includes a first power amplifier (2) and a second power amplifier (3). The external connection terminal (4) is connected to a tracker component (85) that supplies a power supply voltage (V1) to the plurality of power amplifiers. The filter (5) is not provided on a first path (P1) between the external connection terminal (4) and the first power amplifier (2), but is provided on a second path (P2) between the external connection terminal (4) and the second power amplifier (3). The switch (6) switches the connection to the external connection terminal (4) between the first path (P1) and the second path (P2).

Description

Technical Field

[0001] This invention generally relates to high-frequency modules and communication devices. More specifically, this invention relates to a high-frequency module having multiple power amplifiers and a communication device having a high-frequency module. Background Technology

[0002] In recent years, power amplifier circuits using envelope tracking (hereinafter referred to as "ET method") have been known (for example, see Patent Document 1). ET method refers to a high-frequency amplification technique that varies the amplitude of the power supply voltage of the amplifying element according to the amplitude of the envelope of the high-frequency signal. More specifically, ET method refers to a technique that reduces power loss and achieves high efficiency by varying the collector voltage of the amplifying element according to the output voltage, thereby reducing power loss when operating under a fixed power supply voltage.

[0003] The power amplifier circuit described in Patent Document 1 includes a transistor that amplifies the signal input to the base and outputs it from the collector, and changes the power supply voltage of the transistor according to the amplitude of the envelope of the high-frequency signal, and supplies the power supply voltage to the transistor.

[0004] Patent Document 1: International Publication No. 2003 / 176147

[0005] However, in the power amplifier circuit described in Patent Document 1, a filter is connected in the path between the tracker component and the power amplifier in order to reduce the harmonic components of the power supply voltage from the tracker component.

[0006] However, in the conventional power amplifier circuit described in Patent Document 1, when the path for supplying power supply voltage to the power amplifier corresponding to multiple communication frequency bands is shared, the power supply voltage of the power amplifier passes through a filter with the same characteristics in all communication frequency bands. Therefore, it is difficult to simultaneously achieve low loss and good attenuation characteristics depending on the communication frequency band. Summary of the Invention

[0007] The present invention was made in view of the above-mentioned points, and the object of the present invention is to provide a high-frequency module and communication device that can achieve both low loss and good attenuation characteristics in each of multiple communication frequency bands.

[0008] One embodiment of the high-frequency module of the present invention includes multiple power amplifiers, an external connection terminal, a filter, and a switch. The multiple power amplifiers include a first power amplifier and a second power amplifier. The external connection terminal is connected to a tracker component that supplies power voltage to the multiple power amplifiers. The filter is not disposed on a first path between the external connection terminal and the first power amplifier, but on a second path between the external connection terminal and the second power amplifier. The switch toggles the connection with the external connection terminal between the first path and the second path.

[0009] One aspect of the communication device of the present invention includes the aforementioned high-frequency module and signal processing circuit. The signal processing circuit outputs a high-frequency signal to the high-frequency module.

[0010] According to the high-frequency module and communication device of the present invention described above, both low loss and good attenuation characteristics can be achieved in each of the multiple communication frequency bands. Attached Figure Description

[0011] Figure 1 This is a schematic diagram showing the structure of the main parts of the high-frequency module in the implementation method.

[0012] Figure 2 This is a schematic diagram illustrating the structure of the high-frequency module and communication device in the implementation method.

[0013] Figure 3 This is the circuit diagram of the filter for the high-frequency module mentioned above.

[0014] Figure 4 This is the main view of the aforementioned high-frequency module.

[0015] Figure 5 It is one of the high-frequency modules mentioned above. Figure 4 The cross-sectional view along line X1-X1.

[0016] Figure 6 This is a front view of the high-frequency module of Variation 1 of the implementation method.

[0017] Figure 7 It is one of the high-frequency modules mentioned above. Figure 6 The cross-sectional view along line X2-X2.

[0018] Figure 8 This is the rear view of the aforementioned high-frequency module.

[0019] Figure 9 This is a cross-sectional view of the high-frequency module of Variation 2 of the implementation method.

[0020] Figure 10 This is a circuit diagram of the filter of the high-frequency module in Variation 3 of the implementation method. Detailed Implementation

[0021] Hereinafter, the high-frequency module and communication device according to the embodiments will be described with reference to the accompanying drawings. The drawings referred to in the following embodiments are schematic diagrams, and the size, thickness and ratio of each component in the drawings may not reflect the actual size ratio.

[0022] (Implementation Method)

[0023] (1) High-frequency module

[0024] The structure of the high-frequency module 1 in the embodiment will be described with reference to the accompanying drawings.

[0025] like Figure 1 As shown, the high-frequency module 1 of this embodiment includes multiple power amplifiers (first power amplifier 2 and second power amplifier 3), an external connection terminal 4, a filter 5, and a switch 6 (first switch). Additionally, the high-frequency module 1 includes an antenna terminal 11, an input terminal 12, a transmit switch 15 (second switch), and an antenna switch 16 (third switch). The high-frequency signal output from the high-frequency module 1 is transmitted to a base station (not shown) via an antenna 81 described later. Figure 2 As shown, the high-frequency module 1 is used in communication devices such as 8.

[0026] In high-frequency module 1, envelope tracking (hereinafter referred to as "ET mode") is used when amplifying high-frequency signals. ET mode includes analog envelope tracking (hereinafter referred to as "analog ET mode") and digital envelope tracking (hereinafter referred to as "digital ET mode").

[0027] Analog ET mode continuously detects the envelope of the high-frequency signal input to the power amplifier (amplifying element) and adjusts the amplitude level of the power amplifier's (amplifying element's) supply voltage accordingly. In analog ET mode, the envelope is continuously detected, so the amplitude level of the supply voltage changes continuously.

[0028] Digital Echo Echo (ET) is a method that discretely detects the envelope of the amplitude of the high-frequency signal input to a power amplifier (amplifying element) and adjusts the amplitude level of the power amplifier's (amplifying element's) supply voltage accordingly. In digital ET, the amplitude level of the high-frequency signal is detected discontinuously but at regular intervals, and the detected amplitude level is quantized. Because the envelope is detected discretely in digital ET, the amplitude level of the supply voltage changes discretely.

[0029] (2) Communication device

[0030] Next, the communication device 8 using the high-frequency module 1 will be described with reference to the accompanying drawings.

[0031] like Figure 2 As shown, the communication device 8 includes a high-frequency module 1, an antenna 81, a signal processing circuit 82, and a tracker component 85. The communication device 8 is, for example, a mobile phone such as a smartphone. However, the communication device 8 is not limited to mobile phones; it could also be, for example, a wearable terminal such as a smartwatch.

[0032] The communication device 8 performs communication in both a first communication frequency band and a second communication frequency band. More specifically, the communication device 8 transmits a transmission signal (hereinafter referred to as "first transmission signal") in the first communication frequency band and receives a reception signal (hereinafter referred to as "first reception signal") in the first communication frequency band. Furthermore, the communication device 8 transmits a transmission signal (hereinafter referred to as "second transmission signal") in the second communication frequency band and receives a reception signal (hereinafter referred to as "second reception signal") in the second communication frequency band.

[0033] The first transmitted signal and the first received signal are TDD (Time Division Duplex) signals. However, the first transmitted signal and the first received signal are not limited to TDD signals; they can also be FDD (Frequency Division Duplex) signals. TDD is a wireless communication technology that allocates the same frequency band for transmitting and receiving wireless signals, switching between transmission and reception according to time. FDD is a wireless communication technology that allocates different frequency bands for transmitting and receiving wireless signals.

[0034] The second transmitted signal and the second received signal are TDD signals. However, the second transmitted signal and the second received signal are not limited to TDD signals; they can also be FDD signals.

[0035] (3) Circuit structure of high frequency module

[0036] Hereinafter, the circuit structure of the high-frequency module 1 according to the embodiment will be described with reference to the accompanying drawings.

[0037] (3.1) First power amplifier

[0038] Although not illustrated, Figure 1 The first power amplifier 2 shown has transistors (amplifying elements).

[0039] The first power amplifier 2 is an amplifier that amplifies the first transmit signal (the transmit signal of TDD). More specifically, the first power amplifier 2 is a power amplifier that amplifies both the transmit signal with a communication frequency band of intermediate frequency and the transmit signal with a communication frequency band of high frequency. The first power amplifier 2 amplifies the transmit signal of n41, which is a frequency band used for 5G NR, as a transmit signal with a communication frequency band of high frequency.

[0040] The transistor (not shown) in the first power amplifier 2 is, for example, an NPN transistor, which is an amplifying element supplied with power supply voltage V1 and amplifies high-frequency signals. The transistor is connected to the RF signal processing circuit 84 (see reference). Figure 2 The high-frequency signal output is amplified. The collector of the transistor is electrically connected to switch 6.

[0041] A power supply voltage V1 is supplied to the transistor of the first power amplifier 2. A high-frequency signal from the input terminal 12 is input to the base of the transistor. A power supply voltage V1 controlled according to the amplitude level of the high-frequency signal is applied to the collector of the transistor from the tracker component 85.

[0042] Here, as described above, the ET method is used, so the amplitude level of the power supply voltage V1 supplied to the transistor of the first power amplifier 2 varies based on the amplitude of the high-frequency signal.

[0043] (3.2) Second power amplifier

[0044] Figure 1 The second power amplifier 3 shown includes transistors (amplifying elements). The transistors in the second power amplifier 3 are, for example, composed of HBTs (Heterojunction Bipolar Transistors).

[0045] The second power amplifier 3 is an amplifier that amplifies the second transmit signal (the transmit signal of the FDD). More specifically, the second power amplifier 3 is a power amplifier that amplifies both the transmit signal in the intermediate frequency band and the transmit signal in the high frequency band. The second power amplifier 3 amplifies the transmit signal in Band 30, which is a 3GPP band, as a transmit signal in the high frequency band.

[0046] The transistor (not shown) in the second power amplifier 3 is, for example, an NPN transistor, which is an amplifying element supplied with power supply voltage V1 and amplifies high-frequency signals. The transistor is connected to the RF signal processing circuit 84 (see reference). Figure 2 The high-frequency signal output is amplified. The collector of the transistor is electrically connected to filter 5.

[0047] A power supply voltage V1 is supplied to the transistor of the second power amplifier 3. A high-frequency signal from input terminal 12 is input to the base of the transistor. The collector of the transistor is connected to filter 5. A power supply voltage V1 controlled according to the amplitude level of the high-frequency signal is applied to the collector of the transistor from the tracker component 85.

[0048] Here, as described above, the ET method is used, so the amplitude level of the power supply voltage V1 supplied to the transistor of the second power amplifier 3 varies based on the amplitude of the high-frequency signal.

[0049] (3.3) External connection terminals

[0050] like Figure 1 As shown, external connection terminal 4 is a terminal for connecting to tracker component 85. External connection terminal 4 is directly or indirectly connected to tracker component 85. The power supply voltage V1 from tracker component 85 is supplied to the first power amplifier 2 or the second power amplifier 3 via external connection terminal 4.

[0051] (3.4) Filter

[0052] like Figure 1 As shown, filter 5 is connected on the second path P2 between switch 6 and the second power amplifier 3. Filter 5 is, for example, a low-pass filter, which reduces the harmonic components of the power supply voltage V1. Therefore, noise caused by the power supply voltage V1 can be reduced.

[0053] like Figure 3 As shown, filter 5 includes an inductor L1, a first capacitor C1, a second capacitor C2, and a third capacitor C3. The first capacitor C1 is connected in parallel with inductor L1. The second capacitor C2 is connected to the input side of inductor L1. More specifically, the second capacitor C2 is connected between the path between switch 6 and inductor L1 and ground. The third capacitor C3 is connected to the output side of inductor L1. More specifically, the third capacitor C3 is connected between the path between inductor L1 and the second power amplifier 3 and ground. Filter 5 is a filter primarily composed of inductors and capacitors, also known as an LC filter.

[0054] (3.5) Switch

[0055] like Figure 1 As shown, switch 6 is a switch that switches the path of connection to external connection terminal 4. In other words, switch 6 is a switch that switches the path of connection to external connection terminal 4 from the first path P1 and the second path P2.

[0056] Switch 6 has a common terminal 61 and multiple (two in the example) selector terminals 62 and 63. The common terminal 61 is connected to an external connection terminal 4. Selector terminal 62 is connected to a first power amplifier 2. Selector terminal 63 is connected to a second power amplifier 3 via a filter 5.

[0057] Switch 6 is, for example, a switch capable of connecting at least one of a plurality of select terminals 62, 63 to a common terminal 61. Switch 6 is, for example, a switch IC (Integrated Circuit). Switch 6 is, for example, comprised of a signal processing circuit 82 described later (see reference). Figure 2 Controlled by the RF signal processing circuit 84 (refer to the signal processing circuit 82). Figure 2 The control signal is used to switch the connection status between the common terminal 61 and the multiple select terminals 62 and 63.

[0058] (4) Other components of the high-frequency module

[0059] In addition to the aforementioned constituent elements, such as Figure 2 As shown, the high-frequency module 1 also includes multiple (two in the example) duplexers 72 and 73, a first transmit filter 74, a first receive filter 75, multiple (three in the example) low-noise amplifiers 76a to 76c, a transmit switch 15, an antenna switch 16, and a receive switch 17. Furthermore, the high-frequency module 1 includes an antenna terminal 11, an input terminal 12, and an output terminal 13.

[0060] (4.1) Duplexer / First Transmit Filter / First Receive Filter

[0061] Figure 2 The first transmit filter 74 shown is a transmit filter that allows the first transmit signal to pass through. The first transmit filter 74 is disposed in the path between the first power amplifier 2 and the antenna terminal 11 in the transmit path. More specifically, the first transmit filter 74 is disposed in the path between the first power amplifier 2 and the antenna switch 16. The first transmit filter 74 allows the first transmit signal, amplified by the first power amplifier 2 and output from the first power amplifier 2, to pass through. The transmit path is the path connecting the input terminal 12 and the antenna terminal 11 for transmitting a high-frequency signal from the antenna 81.

[0062] Figure 2 The first receiving filter 75 shown is a receiving filter that allows the first received signal to pass through. The first receiving filter 75 is disposed in the path between the antenna terminal 11 and the low-noise amplifier 76c in the receiving path. More specifically, the first receiving filter 75 is disposed in the path between the antenna switch 16 and the low-noise amplifier 76c. The first receiving filter 75 allows the first received signal from the antenna 81 to pass through. The receiving path is the path connecting the antenna terminal 11 and the output terminal 13 for outputting the high-frequency signal to the signal processing circuit 82.

[0063] like Figure 2 As shown, the duplexer 72 includes a second transmitting filter 721 and a second receiving filter 722.

[0064] The second transmit filter 721 is a transmit filter that allows the second transmit signal to pass through. The second transmit filter 721 is disposed in the path between the second power amplifier 3a and the antenna terminal 11 in the transmit path. More specifically, the second transmit filter 721 is disposed in the path between the second power amplifier 3a and the antenna switch 16. The second transmit filter 721 allows the second transmit signal, which has been amplified by the second power amplifier 3a and is output from the second power amplifier 3a, to pass through. The transmit path is the path connecting the input terminal 12 and the antenna terminal 11 for transmitting a high-frequency signal from the antenna 81.

[0065] The second receiving filter 722 is a receiving filter that allows the second received signal to pass through. The second receiving filter 722 is disposed in the path between antenna terminal 11 and low-noise amplifier 76a in the receiving path. More specifically, the second receiving filter 722 is disposed in the path between antenna switch 16 and low-noise amplifier 76a. The second receiving filter 722 allows the second received signal from antenna 81 to pass through. The receiving path is the path connecting antenna terminal 11 and output terminal 13 for outputting the high-frequency signal to signal processing circuit 82.

[0066] like Figure 2 As shown, the duplexer 73 includes a second transmitting filter 731 and a second receiving filter 732.

[0067] The second transmit filter 731 is a transmit filter that allows the second transmit signal to pass through. The second transmit filter 731 is disposed in the path between the second power amplifier 3b and the antenna terminal 11 in the transmit path. More specifically, the second transmit filter 731 is disposed in the path between the second power amplifier 3b and the antenna switch 16. The second transmit filter 731 allows the second transmit signal, which has been amplified by the second power amplifier 3b and is output from the second power amplifier 3b, to pass through. The transmit path is the path connecting the input terminal 12 and the antenna terminal 11 for transmitting a high-frequency signal from the antenna 81.

[0068] The second receiving filter 732 is a receiving filter that allows the second received signal to pass through. The second receiving filter 732 is disposed in the path between antenna terminal 11 and low-noise amplifier 76b in the receiving path. More specifically, the second receiving filter 732 is disposed in the path between antenna switch 16 and low-noise amplifier 76b. The second receiving filter 732 allows the second received signal from antenna 81 to pass through. The receiving path is the path connecting antenna terminal 11 and output terminal 13 for outputting the high-frequency signal to signal processing circuit 82.

[0069] (4.2) Low-noise amplifier

[0070] Figure 2The low-noise amplifier 76c shown is an amplifier that amplifies the first received signal with low noise. The low-noise amplifier 76c is disposed between the first receiving filter 75 and the receiving switch 17 in the receiving path. The low-noise amplifier 76c has input terminals and output terminals. The input terminals of the low-noise amplifier 76c are connected to the first receiving filter 75, and the output terminals of the low-noise amplifier 76c are connected to external circuitry (e.g., signal processing circuitry 82) via the receiving switch 17 and the output terminal 13.

[0071] Figure 2 The low-noise amplifier 76a shown is an amplifier that amplifies the second received signal with low noise. The low-noise amplifier 76a is positioned between the second receiving filter 722 and the receiving switch 17 in the receiving path. The low-noise amplifier 76a has input and output terminals. The input terminal of the low-noise amplifier 76a is connected to the second receiving filter 722, and the output terminal of the low-noise amplifier 76a is connected to external circuitry (e.g., signal processing circuitry 82) via the receiving switch 17 and output terminal 13. The low-noise amplifier 76b is the same as the low-noise amplifier 76a.

[0072] (4.3) Send Switch

[0073] like Figure 2 As shown, the transmit switch 15 is a switch that switches the path connected to the input terminal 12. In other words, the transmit switch 15 is a switch that switches between the power amplifiers connected to the input terminal 12 from the first power amplifier 2 and the second power amplifiers 3a and 3b.

[0074] The transmit switch 15 has a common terminal 151 and multiple (three in the example) selector terminals 152-154. The common terminal 161 is connected to the input terminal 12. The selector terminal 152 is connected to the first power amplifier 2. The selector terminal 153 is connected to the second power amplifier 3a. The selector terminal 154 is connected to the second power amplifier 3b.

[0075] The transmit switch 15 is, for example, a switch capable of connecting at least one of the multiple select terminals 152-154 to the common terminal 151. The transmit switch 15 is, for example, a switch IC (Integrated Circuit). The transmit switch 15 is, for example, controlled by the signal processing circuit 82 described later. The transmit switch 15 switches the connection state between the common terminal 151 and the multiple select terminals 152-154 according to the control signal from the RF signal processing circuit 84 of the signal processing circuit 82.

[0076] (4.4) Antenna Switch

[0077] like Figure 2As shown, antenna switch 16 is a switch that switches the path connected to antenna terminal 11. In other words, antenna switch 16 is a switch that switches the filter connected to antenna terminal 11 from duplexers 72, 73, first transmit filter 74, and first receive filter 75.

[0078] Antenna switch 16 has a common terminal 161 and multiple (four in the example) select terminals 162-165. Common terminal 161 is connected to antenna terminal 11. Select terminal 162 is connected to first transmit filter 74. Select terminal 163 is connected to first receive filter 75. Select terminal 164 is connected to duplexer 72. Select terminal 165 is connected to duplexer 73.

[0079] Antenna switch 16 is, for example, a switch capable of connecting at least one of multiple select terminals 162-165 to a common terminal 161. Antenna switch 16 is, for example, a switch IC (Integrated Circuit). Antenna switch 16 is, for example, controlled by signal processing circuit 82 (described later). Antenna switch 16 switches the connection state between common terminal 161 and multiple select terminals 162-165 according to control signals from RF signal processing circuit 84 of signal processing circuit 82. Alternatively, antenna switch 16 may also be a switch capable of simultaneously connecting multiple select terminals 162-165 to common terminal 161. In this case, antenna switch 16 is a switch capable of one-to-many connections.

[0080] (4.5) Receiver switch

[0081] like Figure 2 As shown, the receive switch 17 is a switch that switches the path connected to the output terminal 13. In other words, the receive switch 17 is a switch that switches the low-noise amplifiers connected to the output terminal 13 from the low-noise amplifiers 76a to 76c.

[0082] The receive switch 17 has a common terminal 171 and multiple (three in the example shown) select terminals 172-174. The common terminal 171 is connected to the output terminal 13. Select terminal 172 is connected to the low-noise amplifier 76c. Select terminal 173 is connected to the low-noise amplifier 76a. Select terminal 174 is connected to the low-noise amplifier 76b.

[0083] The receive switch 17 is, for example, a switch capable of connecting at least one of the multiple select terminals 172-174 to the common terminal 171. The receive switch 17 is, for example, a switch IC (Integrated Circuit). The receive switch 17 is, for example, controlled by the signal processing circuit 82 described later. The receive switch 17 switches the connection state between the common terminal 171 and the multiple select terminals 172-174 according to the control signal from the RF signal processing circuit 84 of the signal processing circuit 82.

[0084] (4.6) Antenna terminals / input terminals / output terminals

[0085] like Figure 2 As shown, antenna terminal 11 is the terminal that connects to antenna 81, which will be described later. Antenna terminal 11 is directly or indirectly connected to antenna 81. High-frequency signals from high-frequency module 1 are output to antenna 81 via antenna terminal 11. Additionally, high-frequency signals from antenna 81 are output to high-frequency module 1 via antenna terminal 11.

[0086] like Figure 2 As shown, input terminal 12 is a terminal connected to the signal processing circuit 82 described later. Input terminal 12 is directly or indirectly connected to the signal processing circuit 82. The high-frequency signal from the signal processing circuit 82 is output to the first power amplifier 2 or the second power amplifier 3 via input terminal 12 and transmit switch 15.

[0087] like Figure 2 As shown, output terminal 13 is a terminal connected to the signal processing circuit 82 described later. Output terminal 13 is directly or indirectly connected to the signal processing circuit 82. High-frequency signals from low-noise amplifiers 76a to 76c are output to the signal processing circuit 82 via receiving switch 17 and output terminal 13.

[0088] (5) Structure of the high-frequency module

[0089] Hereinafter, the structure of the high-frequency module 1 of the embodiment will be described with reference to the accompanying drawings.

[0090] like Figure 4 and Figure 5 As shown, the high-frequency module 1 includes a mounting base plate 91, multiple external connection terminals 93, and resin components 92.

[0091] The high-frequency module 1 is electrically connected to an external substrate (not shown). The external substrate is, for example, a communication device 8 such as a mobile phone or communication equipment (see reference). Figure 2 The mother substrate of the high-frequency module 1. Furthermore, the ability of the high-frequency module 1 to be electrically connected to the external substrate refers not only to the case where the high-frequency module 1 is directly mounted on the external substrate, but also to the case where the high-frequency module 1 is indirectly mounted on the external substrate. Furthermore, the case where the high-frequency module 1 is indirectly mounted on the external substrate refers to the case where the high-frequency module 1 is mounted on another module already mounted on the external substrate, etc.

[0092] (5.1) Mounting the substrate

[0093] like Figure 5As shown, the mounting substrate 91 has a first main surface 911 and a second main surface 912. The first main surface 911 and the second main surface 912 are opposite to each other in the thickness direction D1 of the mounting substrate 91. When the high-frequency module 1 is disposed on an external substrate (not shown), the second main surface 912 is opposite to the external substrate. The mounting substrate 91 is a mounting substrate on which electronic components are mounted on the first main surface 911.

[0094] Mounting substrate 91 is a multilayer substrate with multiple dielectric layers stacked on top of each other. Although not shown, mounting substrate 91 has multiple conductor pattern portions and multiple via electrodes (including through electrodes). The multiple conductor pattern portions include conductor pattern portions with ground potential. The multiple via electrodes are used for electrical connection between components mounted on the first main surface 911 of mounting substrate 91 and the conductor pattern portions of mounting substrate 91. In addition, the multiple via electrodes are used for electrical connection between components mounted on the first main surface 911 of mounting substrate 91 and components mounted on the second main surface 912 of mounting substrate 91, and for electrical connection between the conductor pattern portions of mounting substrate 91 and external connection terminals 93.

[0095] like Figure 4 As shown, a second power amplifier 3, a filter 5, and a switch 6 are disposed on the first main surface 911 of the mounting substrate 91. Furthermore, duplexers 72 and 73, a first transmit filter 74, a low-noise amplifier 76, and a matching circuit 77 are disposed on the first main surface 911 of the mounting substrate 91. Additionally, a transmit switch 15 and an antenna switch 16 are disposed on the first main surface 911 of the mounting substrate 91. On the other hand, as... Figure 5 As shown, a plurality of external connection terminals 93 are arranged on the second main surface 912 of the mounting substrate 91.

[0096] (5.2) Second power amplifier

[0097] like Figure 4 As shown, the second power amplifier 3 is disposed on the first main surface 911 of the mounting substrate 91. Furthermore, a portion of the second power amplifier 3 may also be integrated into the mounting substrate 91. In summary, the second power amplifier 3 can be disposed on the mounting substrate 91 on the side closer to the first main surface 911 than the second main surface 912.

[0098] (5.3) Duplexer

[0099] Figure 4 The duplexer 72 shown above includes a second transmit filter 721 (see reference 721). Figure 2 ) and second receiving filter 722 (refer to) Figure 2 Similarly, the duplexer 73, as described above, includes a second transmit filter 731 (see reference 731). Figure 2 ) and second receiving filter 732 (refer to Figure 2The duplexer 72 (second transmitting filter 721, second receiving filter 722) will be described below, but the same applies to the duplexer 73 (second transmitting filter 731, second receiving filter 732).

[0100] Figure 2 The second transmitting filter 721 shown is, for example, an elastic wave filter comprising multiple series-arm resonators and multiple parallel-arm resonators. The elastic wave filter is, for example, a SAW (Surface Acoustic Wave) filter utilizing elastic surface waves. Furthermore, the second transmitting filter 721 may also include at least one of an inductor and a capacitor connected in series with any one of the multiple series-arm resonators, or it may include an inductor or a capacitor connected in series with any one of the multiple parallel-arm resonators.

[0101] Similarly, Figure 2 The second receiving filter 722 shown is, for example, an elastic wave filter comprising multiple series-arm resonators and multiple parallel-arm resonators. The elastic wave filter is, for example, a SAW filter utilizing elastic surface waves. Furthermore, the second receiving filter 722 may also include at least one of an inductor and a capacitor connected in series with any one of the multiple series-arm resonators, or it may include an inductor or a capacitor connected in series with any one of the multiple parallel-arm resonators.

[0102] like Figure 4 As shown, the duplexer 72 is disposed on the first main surface 911 of the mounting substrate 91. Alternatively, a portion of the duplexer 72 may be embedded within the mounting substrate 91. In short, the duplexer 72 can be disposed on the mounting substrate 91 on the side closer to the first main surface 911 than the second main surface 912.

[0103] (5.4) External connection terminals

[0104] like Figure 5 As shown, a plurality of external connection terminals 93 are terminals used to electrically connect the mounting substrate 91 to an external substrate (not shown). The plurality of external connection terminals 93 include... Figure 2 The antenna terminal 11, input terminal 12, output terminal 13, external connection terminal 4, and multiple grounding terminals (not shown) are shown.

[0105] Multiple external connection terminals 93 are disposed on the second main surface 912 of the mounting substrate 91. Each of the multiple external connection terminals 93 is, for example, a spherical electrode disposed on the second main surface 912 of the mounting substrate 91. Each external connection terminal 93 is, for example, a solder bump. The material of the multiple external connection terminals 93 is, for example, metal (solder, etc.).

[0106] In the high-frequency module 1, considering the mounting capability from the high-frequency module 1 to the external substrate (mother substrate) and the need to increase the number of grounding terminals of the high-frequency module 1, multiple external connection terminals 93 are provided.

[0107] (5.5) Resin components

[0108] like Figure 5 As shown, a resin component 92 is disposed on the first main surface 911 of the mounting substrate 91, covering the electronic components disposed on the first main surface 911 of the mounting substrate 91 and the first main surface 911 of the mounting substrate 91. The resin component 92 has the function of ensuring the reliability of the electronic components disposed on the first main surface 911 of the mounting substrate 91, such as mechanical strength and moisture resistance.

[0109] (6) Detailed structure of each component of the high-frequency module

[0110] (6.1) Mounting the substrate

[0111] Figure 5 The mounting substrate 91 shown is, for example, a printed wiring board or an LTCC (Low Temperature Co-fired Ceramics) substrate. Here, the mounting substrate 91 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductor pattern portions. The multiple dielectric layers and multiple conductor pattern portions are stacked in the thickness direction D1 of the mounting substrate 91. The multiple conductor pattern portions are each formed into a predetermined pattern. Each of the multiple conductor pattern portions includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 91. The material of each conductor pattern portion is, for example, copper.

[0112] The first main surface 911 and the second main surface 912 of the mounting substrate 91 are separated in the thickness direction D1 of the mounting substrate 91 and intersect the thickness direction D1 of the mounting substrate 91. The first main surface 911 of the mounting substrate 91 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 91, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. Similarly, the second main surface 912 of the mounting substrate 91 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 91, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. Furthermore, the first main surface 911 and the second main surface 912 of the mounting substrate 91 may also have minute irregularities or depressions or protrusions.

[0113] (6.2) Filter

[0114] right Figure 2The detailed structures of the duplexers 72 and 73, the first transmitting filter 74, and the first receiving filter 75 shown will be described. In the following description, the duplexers 72 and 73, the first transmitting filter 74, and the first receiving filter 75 are referred to as filters without distinction.

[0115] The filter is a single-chip filter. Here, in the filter, for example, multiple series-arm resonators and multiple parallel-arm resonators are each composed of elastic wave resonators. In this case, the filter, for example, includes a substrate, a piezoelectric layer, and multiple IDT electrodes (Interdigital Transducers). The substrate has a first surface and a second surface. The piezoelectric layer is disposed on the first surface of the substrate. The piezoelectric layer is disposed on a low-velocity film. Multiple IDT electrodes are disposed on the piezoelectric layer. Here, the low-velocity film is disposed directly or indirectly on the substrate. Additionally, the piezoelectric layer is disposed directly or indirectly on the low-velocity film. In the low-velocity film, the sound velocity of the propagating bulk wave is lower than the sound velocity of the elastic wave propagating in the piezoelectric layer. In the substrate, the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating in the piezoelectric layer. The material of the piezoelectric layer is, for example, lithium tantalate. The material of the low-velocity film is, for example, silicon oxide. The substrate is, for example, a silicon substrate. For example, when the wavelength of the elastic wave, determined by the electrode finger period of the IDT electrode, is set to λ, the thickness of the piezoelectric layer is 3.5λ or less. The thickness of the low-velocity film is, for example, 2.0λ or less.

[0116] The piezoelectric layer can be formed from any one of lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, and lead zirconate titanate. Furthermore, the low-velocity film can be made from at least one material selected from the group consisting of silicon oxide, glass, silicon oxynitride, tantalum oxide, and compounds formed by adding fluorine, carbon, or boron to silicon oxide. Additionally, the substrate can be made from at least one material selected from the group consisting of silicon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, sapphire, lithium tantalate, lithium niobate, quartz, aluminum oxide, zirconium oxide, cordierite, mullite, talc, forsterite, magnesium oxide, and diamond.

[0117] The filter, for example, also includes a spacer layer and a cover member. The spacer layer and cover member are disposed on a first surface of a substrate. Viewed from the thickness direction of the substrate, the spacer layer surrounds multiple IDT electrodes. Viewed from the thickness direction of the substrate, the spacer layer is frame-shaped (rectangular frame-shaped). The spacer layer is electrically insulating. The material of the spacer layer is, for example, a synthetic resin such as epoxy resin or polyimide. The cover member is flat. Viewed from the thickness direction of the substrate, the cover member is rectangular, but not limited to this; for example, it could also be square. In the filter, when viewed from the thickness direction of the substrate, the external dimensions of the cover member, the external dimensions of the spacer layer, and the external dimensions of the cover member are approximately the same. The cover member is disposed on the spacer layer such that it faces the substrate in the thickness direction of the substrate. The cover member overlaps with the multiple IDT electrodes in the thickness direction of the substrate and is separated from the multiple IDT electrodes in the thickness direction of the substrate. The cover member is electrically insulating. The material of the cover member is, for example, a synthetic resin such as epoxy resin or polyimide. The filter has a space enclosed by the substrate, the spacer layer, and the cover member. In the filter, gas enters the space. The gas is, for example, air, an inert gas (e.g., nitrogen), etc. Multiple terminals are exposed from the cover component. Each of the multiple terminals is, for example, a bump. Each bump is, for example, a solder bump. The bumps are not limited to solder bumps; for example, they could also be gold bumps.

[0118] The filter may also include, for example, a bonding layer sandwiched between the low-velocity diaphragm and the piezoelectric layer. The bonding layer may be made of, for example, resin (epoxy resin, polyimide resin). Alternatively, the filter may have a dielectric film in any of the following locations: between the low-velocity diaphragm and the piezoelectric layer, on the piezoelectric layer, or under the low-velocity diaphragm.

[0119] Alternatively, the filter may include a high-velocity acoustic film sandwiched between a substrate and a low-velocity acoustic film. Here, the high-velocity acoustic film is disposed directly or indirectly on the substrate. The low-velocity acoustic film is disposed directly or indirectly on the high-velocity acoustic film. The piezoelectric layer is disposed directly or indirectly on the low-velocity acoustic film. In the high-velocity acoustic film, the velocity of the propagating bulk wave is higher than the velocity of the propagating elastic wave in the piezoelectric layer. In the low-velocity acoustic film, the velocity of the propagating bulk wave is lower than the velocity of the propagating elastic wave in the piezoelectric layer.

[0120] The hypersonic membrane is composed of piezoelectric materials such as diamond-like carbon, aluminum nitride, alumina, silicon carbide, silicon nitride, silicon, sapphire, lithium tantalate, lithium niobate, and quartz, as well as various ceramics such as alumina, zirconium oxide, cordierite, mullite, talc, and forsterite, magnesium oxide, diamond, or materials with the above materials as the main components, or materials with mixtures of the above materials as the main components.

[0121] Regarding the thickness of the hypersonic film, since the hypersonic film has the function of confining elastic waves within the piezoelectric layer and the low-velocity film, the thicker the hypersonic film, the better. The piezoelectric substrate can also have a bonding layer, a dielectric film, etc., as other films besides the hypersonic film, the low-velocity film, and the piezoelectric layer.

[0122] The multiple series-arm resonators and multiple parallel-arm resonators are not limited to the elastic wave resonators described above; for example, they can also be SAW resonators or BAW (Bulk Acoustic Wave) resonators. Here, the SAW resonator includes, for example, a piezoelectric substrate and IDT electrodes disposed on the piezoelectric substrate. When the filter is composed of multiple series-arm resonators and multiple parallel-arm resonators, each consisting of SAW resonators, a piezoelectric substrate has multiple IDT electrodes corresponding one-to-one with the multiple series-arm resonators and multiple IDT electrodes corresponding one-to-one with the multiple parallel-arm resonators. The piezoelectric substrate is, for example, a lithium tantalate substrate or a lithium niobate substrate.

[0123] (6.3) Power Amplifier

[0124] right Figure 2 The detailed structures of the first power amplifier 2 and the second power amplifier 3 shown will be described below. In the following description, the first power amplifier 2 and the second power amplifier 3 will not be distinguished as power amplifiers.

[0125] The power amplifier is, for example, a single-chip IC having a substrate and an amplification function. The substrate has a first side and a second side facing each other. The substrate is, for example, a gallium arsenide substrate. The amplification function includes at least one transistor formed on the first side of the substrate. The amplification function is a function that amplifies a transmitted signal within a specified frequency band. The transistor is, for example, an HBT (Heterojunction Bipolar Transistor). In the power amplifier, a power supply voltage V1 from a tracker component 85 is applied between the collector and emitter of the HBT. In addition to the amplification function, the power amplifier may also include, for example, a capacitor for DC cutoff. The power amplifier is, for example, flip-chip mounted on the first main surface 911 of a mounting substrate 91, such that the first surface of the substrate is the side of the first main surface 911 of the mounting substrate 91. When viewed from the thickness direction D1 of the mounting substrate 91, the outer periphery of the power amplifier is quadrilateral.

[0126] (6.4) Low-noise amplifier

[0127] right Figure 2 The detailed structure of the low-noise amplifiers 76a to 76c shown will be described below. In the following description, low-noise amplifiers 76a to 76c are referred to as low-noise amplifiers without distinction.

[0128] A low-noise amplifier is, for example, an IC chip comprising a substrate and an amplification function unit. The substrate has a first side and a second side facing each other. The substrate is, for example, a silicon substrate. The amplification function unit is formed on the first side of the substrate. The amplification function unit is a function that amplifies a received signal within a specified frequency band. The low-noise amplifier is, for example, flip-chip mounted on the second main surface 912 of a mounting substrate 91, such that the first side of the substrate becomes the second main surface 912 side of the mounting substrate 91. When viewed from the thickness direction D1 of the mounting substrate 91, the outer periphery of the low-noise amplifier is quadrilateral.

[0129] (7) Components of a communication device

[0130] The following is for reference Figure 2 The constituent elements of the communication device 8 according to the embodiment will be described. As described above, the communication device 8 includes a high-frequency module 1, an antenna 81, a signal processing circuit 82, and a tracker component 85.

[0131] (7.1) Antenna

[0132] like Figure 2 As shown, antenna 81 is connected to antenna terminal 11 of high-frequency module 1. Antenna 81 has the function of transmitting high-frequency signals (transmit signals) output from high-frequency module 1 through radio waves and receiving high-frequency signals (receive signals) from the outside as radio waves and outputting them to high-frequency module 1.

[0133] (7.2) Signal processing circuit

[0134] like Figure 2 As shown, the signal processing circuit 82 includes a baseband signal processing circuit 83 and an RF signal processing circuit 84. The signal processing circuit 82 processes the first transmitted signal and the first received signal, as well as the second transmitted signal and the second received signal.

[0135] The baseband signal processing circuit 83, for example, is a BBIC (Baseband Integrated Circuit), which performs signal processing for high-frequency signals. The frequency of high-frequency signals is, for example, from several hundred MHz to several GHz.

[0136] The baseband signal processing circuit 83 generates I-phase and Q-phase signals based on the baseband signal. The baseband signal can be, for example, an externally input audio signal or image signal. The baseband signal processing circuit 83 performs IQ modulation processing by combining the I-phase and Q-phase signals and outputs a transmit signal. At this time, the transmit signal is generated as a modulated signal (IQ signal) obtained by amplitude modulation of a carrier signal at a specified frequency with a period longer than the period of that carrier signal. The modulated signal output from the baseband signal processing circuit 83 is output as the IQ signal. The IQ signal refers to a signal representing amplitude and phase on the IQ plane. The frequency of the IQ signal is, for example, around several MHz to several tens of MHz.

[0137] The RF signal processing circuit 84 is, for example, an RFIC (Radio Frequency Integrated Circuit) that performs signal processing for high-frequency signals. For example, the RF signal processing circuit 84 performs prescribed signal processing on the modulated signal (IQ signal) output from the baseband signal processing circuit 83. More specifically, the RF signal processing circuit 84 performs upconversion and other signal processing on the modulated signal output from the baseband signal processing circuit 83, and outputs the processed high-frequency signal to the high-frequency module 1. Furthermore, the RF signal processing circuit 84 is not limited to performing direct conversion from the modulated signal to the high-frequency signal. The RF signal processing circuit 84 can also convert the modulated signal to an intermediate frequency (IF) signal and generate a high-frequency signal based on the converted IF signal.

[0138] The signal processing circuit 82 outputs a power control signal to the tracker component 85. The power control signal is a signal that includes information related to changes in the amplitude of the high-frequency signal, and is output from the signal processing circuit 82 to the tracker component 85 to change the amplitude of the power supply voltage V1. The power control signal may be, for example, an I-phase signal and a Q-phase signal.

[0139] (7.3) Tracker components

[0140] like Figure 2 As shown, the tracker component 85 is configured to supply a power supply voltage V1 to the first power amplifier 2 and the second power amplifier 3. More specifically, the tracker component 85 generates a power supply voltage V1 at a level corresponding to the envelope extracted from the modulation signal of the high-frequency signal, and supplies the power supply voltage V1 to the high-frequency module 1.

[0141] The tracker component 85 includes an input terminal (not shown) for inputting a power control signal and a voltage generation unit (not shown) for generating a power supply voltage V1. The input terminal is connected to a signal processing circuit 82, from which a power control signal is input. The tracker component 85 generates the power supply voltage V1 based on the power control signal input to the input terminal. At this time, the tracker component 85 changes the amplitude of the power supply voltage V1 based on the power control signal from the signal processing circuit 82. In other words, the tracker component 85 is an envelope tracking circuit that generates a power supply voltage V1 that varies according to the envelope of the amplitude of the high-frequency signal output from the signal processing circuit 82. The tracker component 85 is, for example, configured as a DC-DC converter, which detects the amplitude level of the high-frequency signal based on the I-phase signal and the Q-phase signal, and uses the detected amplitude level to generate the power supply voltage V1.

[0142] As described above, the tracker component 85 supplies the power supply voltage V1 to the high-frequency module 1 via the external connection terminal 4 through the ET method.

[0143] (8) Operation of the high-frequency module

[0144] Next, refer to Figure 1 The operation of supplying power voltage V1 to the first power amplifier 2 and the second power amplifier 3 in the high-frequency module 1 of the embodiment will be described. The communication frequency bands corresponding to the first power amplifier 2 and the second power amplifier 3 that supply power voltage V1 from the tracker component 85 are the first communication frequency band and the second communication frequency band.

[0145] First, the case where the common terminal 61 and the selection terminal 62 are connected in switch 6 will be explained. If the tracker component 85 outputs a power supply voltage V1, then since no filter 5 is provided on the first path P1, the power supply voltage V1 from the tracker component 85 is directly supplied to the first power amplifier 2. If the power supply voltage V1 is supplied to the first power amplifier 2, the first power amplifier 2 amplifies the high-frequency signal.

[0146] Next, the case where the common terminal 61 of switch 6 is connected to the selection terminals 63 and 64 will be explained. If the tracker component 85 outputs a power supply voltage V1, then due to the second path P2 (in Figure 2 A filter 5 is set on the second path P21, P22 (in the middle). Figure 2The filters are 5a and 5b, so filter 5 allows the power supply voltage V1 from tracker component 85 to pass through. Filter 5 reduces the harmonic components of power supply voltage V1. That is, filter 5 cuts off the harmonic components of power supply voltage V1, allowing the fundamental wave component of power supply voltage V1 to pass through. Then, the power supply voltage V1 that has passed through filter 5 is supplied to the second power amplifier 3. If power supply voltage V1 is supplied to the second power amplifier 3, the second power amplifier 3 amplifies the high-frequency signal.

[0147] As described above, by switching between the first path P1 without filter 5 and the second path P2 with filter 5 via switch 6, it is possible to switch whether the power supply voltage V1 from the tracker component 85 passes through filter 5. That is, it is possible to switch whether to remove the harmonic components of the power supply voltage V1.

[0148] When the second power amplifier 3 amplifies the FDD transmission signal, the harmonic components of the power supply voltage V1 can be reduced by the filter 5, thus reducing noise in the FDD received signal. On the other hand, when the first power amplifier 2 amplifies the TDD transmission signal, the power supply voltage V1 remains unchanged.

[0149] (9) Effect

[0150] In the high-frequency module 1 of the embodiment, a filter 5 is provided on the second path P2 between the second power amplifier 3 (the first power amplifier 2 and the second power amplifier 3) and the external connection terminal 4. Therefore, when supplying a power supply voltage V1 to multiple power amplifiers, the need for the filter 5 can be changed according to each power amplifier, thus achieving both low loss and good attenuation characteristics in each power amplifier.

[0151] (Modified Example)

[0152] The following describes variations of the implementation method.

[0153] (1) Variation Example 1

[0154] As a variation of the implementation method, the high-frequency module 1a may not be a single-sided mounted structure, but rather... Figures 6-8 The diagram shows a double-sided mounting structure.

[0155] like Figure 7 and Figure 8 As shown, in Modified Example 1, the high-frequency module 1a has multiple external connection terminals 95 instead of multiple external connection terminals 93.

[0156] Each of the plurality of external connection terminals 95 is not a bump structure, but has a columnar electrode. The plurality of external connection terminals 95 are disposed on the second main surface 912 of the mounting substrate 91. Each external connection terminal 95 is, for example, a columnar (e.g., cylindrical) electrode disposed on the second main surface 912 of the mounting substrate 91. The material of the plurality of external connection terminals 95 is, for example, a metal (copper, copper alloy, etc.). Each external connection terminal 95 has a base end portion that engages with the second main surface 912 of the mounting substrate 91 and a front end portion opposite to the base end portion in the thickness direction D1 of the mounting substrate 91. The front end portion of each external connection terminal 95 may, for example, include a gold plating layer.

[0157] The high-frequency module 1a of Modified Example 1 has a resin component 94 covering the second main surface 912 side of the mounting substrate 91.

[0158] (2) Variation Example 2

[0159] As a variation of the implementation method, the high-frequency module 1b can also be as follows: Figure 9 The structure shown.

[0160] The high-frequency module 1b has multiple external connection terminals 96 with a bump structure, but lacks columnar external connection terminals 95. In the high-frequency module 1b, the resin component 94 is omitted (see reference). Figure 7 ).

[0161] (3) Variation Example 3

[0162] As a variation of the implementation method, filter 5c can also be as follows: Figure 10 A variable filter as shown. Figure 10 The filter 5c shown is a variable low-pass filter. Filter 5c has inductors L1, L3 and a DTC (Digitally Tunable Capacitor) 51.

[0163] In the high-frequency module 1 of Modified Example 3, the low-pass filter 5c, which is set on the second path P2, is a variable low-pass filter. Therefore, when the second power amplifier 3 amplifies high-frequency signals from multiple communication bands, the characteristics of filter 5c can be changed according to the communication band. As a result, good characteristics can be achieved for each communication band.

[0164] (4) Other variations

[0165] As another variation of the implementation, filter 5 may not be a low-pass filter, but a notch filter (band removal filter).

[0166] In this implementation, the combination of the communication bands for TDD and FDD high-frequency signals is a combination of Band 30 (used in 3GPP) and n41 (used in 5G NR), but it is not limited to this combination. For example, the combination of the communication bands for TDD and FDD high-frequency signals could also be a combination of Band 30 (used in 3GPP) and n38 (used in 5G NR).

[0167] Furthermore, as other variations of the implementation, the duplexers 72 and 73, the first transmitting filter 74, and the first receiving filter 75 are not limited to surface wave filters, and can also be filters other than surface wave filters. For example, the duplexers 72 and 73, the first transmitting filter 74, and the first receiving filter 75 can also be any one of a BAW (Bulk Acoustic Wave) elastic wave filter, an LC resonant filter, and a dielectric filter.

[0168] The embodiments and modifications described above are only a part of the various embodiments and modifications of the present invention. Furthermore, the embodiments and modifications can be modified in various ways, depending on the design, as long as they achieve the objectives of the present invention.

[0169] (Way)

[0170] The following methods are disclosed in this specification.

[0171] The high-frequency module (1; 1a; 1b) of the first embodiment includes multiple power amplifiers, an external connection terminal (4), a filter (5; 5c), and a switch (6). The multiple power amplifiers include a first power amplifier (2) and a second power amplifier (3). The external connection terminal (4) is connected to a tracker component (85) that supplies power supply voltage (V1) to the multiple power amplifiers. The filter (5; 5c) is not located on the first path (P1) between the external connection terminal (4) and the first power amplifier (2), but on the second path (P2) between the external connection terminal (4) and the second power amplifier (3). The switch (6) switches the connection to the external connection terminal (4) between the first path (P1) and the second path (P2).

[0172] According to the high-frequency module (1; 1a; 1b) of the first method, when supplying power supply voltage (V1) to multiple power amplifiers (first power amplifier 2, second power amplifier 3), it is possible to change whether a filter (5) is needed according to each power amplifier. Therefore, in each power amplifier, both low loss and good attenuation characteristics can be achieved.

[0173] In the high-frequency module (1; 1a; 1b) of the second configuration, in the first configuration, the first power amplifier (2) is configured to amplify the high-frequency signal of the TDD. The second power amplifier (3) is configured to amplify the high-frequency signal of the FDD.

[0174] In the third-party high-frequency module (1; 1a; 1b), in the second method, the communication band of the TDD high-frequency signal is Band 30. The communication band of the FDD high-frequency signal is n41.

[0175] In the high-frequency module (1; 1a; 1b) of the fourth method, in the second method, the communication band of the high-frequency signal of TDD is Band 30. The communication band of the high-frequency signal of FDD is n38.

[0176] In the high-frequency module (1; 1a; 1b) of the fifth mode, in any of the first to fourth modes, the filter (5) is a low-pass filter.

[0177] In the high-frequency module (1; 1a; 1b) of the sixth method, the low-pass filter in the fifth method is a variable low-pass filter.

[0178] According to the high-frequency module (1; 1a; 1b) of the sixth method, when the second power amplifier (3) amplifies the high-frequency signals of multiple communication bands, the characteristics of the filter (5) can be changed according to the communication band. As a result, good characteristics can be achieved for each communication band.

[0179] In the high-frequency module (1; 1a; 1b) of the seventh mode, in any of the first to sixth modes, the power supply voltage (V1) is the power supply voltage generated by envelope tracking.

[0180] The communication device (8) of the eighth mode includes any one of the high-frequency modules (1; 1a; 1b) of the first to seventh modes and a signal processing circuit (82). The signal processing circuit (82) outputs a high-frequency signal to the high-frequency module (1; 1a; 1b).

[0181] According to the communication device (8) of the eighth method, in the high-frequency module (1; 1a; 1b), when supplying power supply voltage (V1) to multiple power amplifiers (first power amplifier 2, second power amplifier 3), it is possible to change whether a filter (5) is needed according to each power amplifier, so that both low loss and good attenuation characteristics can be achieved in each power amplifier.

[0182] Explanation of reference numerals in the attached diagram: 1, 1a, 1b… High-frequency module; 11… Antenna terminal; 12… Input terminal; 13… Output terminal; 15… Transmit switch; 151… Common terminal; 152, 153, 154… Select terminal; 16… Antenna switch; 161… Common terminal; 162, 163, 164, 165… Select terminal; 17… Receive switch; 171… Common terminal; 172, 173, 174… Select terminal; 2… First power amplifier; 3, 3a, 3b… Second power amplifier; 4… External connection terminal; 5, 5a, 5b, 5c… Filter; 51… DTC; 6… Switch; 61… Common terminal; 62, 63, 64… Select terminal; 72, 73… Duplexer; 721, 731… Second transmitter 722, 732… Second receiving filter; 74… First transmitting filter; 75… First receiving filter; 76, 76a, 76b, 76c… Low noise amplifier; 77… Matching circuit; 8… Communication device; 81… Antenna; 82… Signal processing circuit; 83… Baseband signal processing circuit; 84… RF signal processing circuit; 85… Tracker component; 91… Mounting substrate; 911… First main surface; 912… Second main surface; 92, 94… Resin components; 93, 95, 96… External connection terminals; C1… First capacitor; C2… Second capacitor; C3… Third capacitor; L1… Inductor; L3… Inductor; P1… First path; P2… Second path; V1… Power supply voltage; D1… Thickness direction.

Claims

1. A high frequency module, wherein, Possessing: a plurality of power amplifiers including a first power amplifier and a second power amplifier; an external connection terminal connected to a tracker component that supplies a power supply voltage to the plurality of power amplifiers; a filter not provided on a first path between the external connection terminal and the first power amplifier, but provided on a second path between the external connection terminal and the second power amplifier; and a switch that switches connection with the external connection terminal between the first path and the second path.

2. The high-frequency module according to claim 1, wherein the first power amplifier is configured to amplify a high-frequency signal of TDD, the second power amplifier is configured to amplify a high-frequency signal of FDD.

3. The high-frequency module according to claim 2, wherein the high-frequency signal of TDD is a Band 30, the high-frequency signal of FDD is n41.

4. The high-frequency module according to claim 2, wherein the high-frequency signal of TDD is a Band 30, the high-frequency signal of FDD is n38.

5. The high-frequency module according to any one of claims 1 to 4, wherein the filter is a low-pass filter.

6. The high-frequency module according to claim 5, wherein the low-pass filter is a variable low-pass filter.

7. The high-frequency module according to any one of claims 1 to 4 and 6, wherein the power supply voltage is a power supply voltage generated by an envelope tracking method.

8. The high-frequency module according to claim 5, wherein the power supply voltage is a power supply voltage generated by an envelope tracking method.

9. A communication device, wherein, Possessing: the high-frequency module according to any one of claims 1 to 8; and a signal processing circuit that outputs a high-frequency signal to the high-frequency module.

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