Method for cutting U-shaped silicon rod

Abstract

The present invention discloses a method for cutting a U-shaped silicon rod, and the method includes: the U-shaped silicon rod includes a first extension part, a second extension part and a bending part; a cutting line X is arranged on a side of a reference line Y far from the bending part, and the cutting line X is parallel to the reference line Y, and a vertical distance between the cutting line X and the reference line Y is L, and L is not less than 2D; a region of the U-shaped silicon rod between the cutting line X and the reference line Y is set as a first cutting region A, and starting from the cutting line X, a second cutting region B is formed by extending along a first direction away from the bending part; n cutting lines are respectively determined in the first cutting region A and the second cutting region B, and cutting is sequentially performed along the n cutting lines, wherein n is an integer not less than 2; the U-shaped silicon rod is cut along the cutting line X. Thereby, the fracture probability of the U-shaped silicon rod during the cutting and separation process is significantly reduced, the yield of the U-shaped silicon rod is greatly improved, and the operation risk during the cutting and separation process is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of polysilicon production. Specifically, the present invention relates to a method for cutting U-shaped silicon rods. Background Art

[0002] Polysilicon rods for zone melting single crystals can be produced by the improved Siemens method. However, due to the CVD growth environment during the production process, the structure of the produced U-shaped silicon rods is very dense, and there is too much residual mechanical stress, resulting in the U-shaped silicon rods being extremely prone to breakage during the cutting and separation process, posing a certain safety risk; in addition, after the deposition of the U-shaped silicon rods, the U-shaped crossbeam needs to be separated from the I-shaped silicon rod first, and then subsequent processes such as rounding, taper grinding, and pickling can be carried out.

[0003] Therefore, there is a need to propose a low-loss and non-destructive separation method for U-shaped silicon rods, thereby improving the yield of U-shaped silicon rods. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems in the related art to some extent. For this purpose, the object of the present invention is to propose a method for cutting U-shaped silicon rods, whereby the fracture probability of the U-shaped silicon rods during the cutting and separation process is significantly reduced, the loss of the U-shaped silicon rods is significantly reduced, the yield of the U-shaped silicon rods is greatly improved, and the operation risk during the cutting and separation process is reduced.

[0005] The present invention proposes a method for cutting U-shaped silicon rods. According to an embodiment of the present invention, the method includes:

[0006] The U-shaped silicon rod includes a first extension portion, a second extension portion, and a bending portion. The first extension portion extends from one side of the bending portion along a first direction, the second extension portion extends from the other side of the bending portion along the first direction. The cross-sections of the first extension portion and the second extension portion perpendicular to the first direction are both circular. The diameters of the circular cross-sections of the first extension portion and the second extension portion perpendicular to the first direction are both D. The circular cross-section at the connection position of the first extension portion and the bending portion is circle a, and the circular cross-section at the connection position of the second extension portion and the bending portion is circle b. The bending portion is symmetric about the center line P. The method includes:

[0007] Let the line connecting the center of circle a and the center of circle b be the reference line Y, and the reference line Y is perpendicular to the first direction;

[0008] Determine the cutting line X according to the reference line Y. The cutting line X is provided on the side of the reference line Y away from the bending portion, and the cutting line X is parallel to the reference line Y. The perpendicular distance between the cutting line X and the reference line Y is L, and L is not less than 2D;

[0009] Let the area of the U-shaped silicon rod between the cutting line X and the reference line Y be the first cutting area A. Starting from the cutting line X, a second cutting area B is formed by extending along a first direction away from the bent portion.

[0010] Along the direction from the reference line Y to the cutting line X, n cutting lines A 1 、A 2 …A n are determined within the first cutting area A. Cutting is performed along the cutting lines A 1 、A 2 …A n , and the corresponding cutting depths H 1 、H 2 …H n of the cutting lines A 1 、H 2 …H n are all less than D, where n is an integer not less than 2.

[0011] Along the direction from away from the cutting line X to the cutting line X, n cutting lines B 1 、B 2 …B n are determined within the second cutting area B. Cutting is performed along the cutting lines B 1 、B 2 …B n , and the corresponding cutting depths H 1 、H 2 …H n of the cutting lines B 1 、H 2 …H n are all less than D, where n is an integer not less than 2.

[0012] Cutting is performed along the cutting line X, and the cutting depth H of the cutting line X is equal to D to complete the cutting between the bent portion and the first extension portion and the second extension portion.

[0013] According to the method for cutting a U-shaped silicon rod according to an embodiment of the present invention, by setting the vertical distance L between the cutting line X and the reference line Y to be not less than 2D, the mechanical stress at the position of the cutting line X is reduced. When the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the U-shaped silicon rod is not easily broken; by setting n cutting lines A 1 、A 2 …A n within the first cutting area A, cutting is performed along the cutting lines A 1 、A 2 …A n , and the cutting lines A1 and A 2 …A n The corresponding cutting depths H 1 、H 2 …H n are all less than D, so that during the process of cutting the U-shaped silicon rod, the mechanical stress of the U-shaped silicon rod can be gradually released, the mechanical stress at the position of the cutting line X gradually decreases, and when the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the U-shaped silicon rod is not likely to break; by arranging n cutting lines B 1 、B 2 …B n in the second cutting area B 1 、B 2 …B n for cutting, and the cutting lines B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n are all less than D, so that during the cutting process, the mechanical stress of the U-shaped silicon rod can be gradually released, the mechanical stress at the position of the cutting line X gradually decreases, and when the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the U-shaped silicon rod is not likely to break. Thus, the fracture probability of the U-shaped silicon rod during the cutting and separation process is significantly reduced, the loss of the U-shaped silicon rod is significantly reduced, the yield of the U-shaped silicon rod is greatly improved, and the operation risk during the cutting and separation process is reduced.

[0014] In addition, the method according to the above embodiments of the present invention may further have the following additional technical features:

[0015] In some embodiments of the present invention, the diameters D of the first extension portion and the second extension portion are both not greater than 180 mm, and the vertical distance between the cutting line X and the reference line Y is L 1 ,L 1 The value range of 1 is 2D ≤ L

[0016] In some embodiments of the present invention, the number of cutting times in the first cutting area A is n 1 ,n 1 The value range of 1 is 2 ≤ n

[0017] In some embodiments of the present invention, the number of cutting times in the second cutting area B is n 2 ,n 2 The value range of 2 is 2 ≤ n

[0018] In some embodiments of the present invention, within the first cutting region A, the cutting line A 1 、A 2 …A n correspondingly has cutting depths H 1 、H 2 …H n increasing in sequence.

[0019] In some embodiments of the present invention, within the second cutting region B, the cutting line B 1 、B 2 …B n correspondingly has cutting depths H 1 、H 2 …H n increasing in sequence.

[0020] In some embodiments of the present invention, the cutting depth corresponding to the cutting line A 1 is H 1 not less than 0.1D, and the cutting depth corresponding to the cutting line A n is H n not greater than 0.3D.

[0021] In some embodiments of the present invention, the cutting depth H corresponding to the cutting line B 1 is 1 not less than 0.1D, and the cutting depth H corresponding to the cutting line B n is n not greater than 0.3D.

[0022] In some embodiments of the present invention, the diameters D of the first extension part and the second extension part are both greater than 180 mm, and the vertical distance between the cutting line X and the reference line Y is L 2 ,L 2 ranges from 4D ≤ L 2 ≤ 6D.

[0023] In some embodiments of the present invention, the number of cutting times within the first cutting region A is n 3 ,n 3 ranges from 4 ≤ n 3 ≤ 7.

[0024] In some embodiments of the present invention, the number of cutting times within the second cutting region B is n 4 ,n 4 ranges from 4 ≤ n 4 ≤ 7.

[0025] In some embodiments of the present invention, within the first cutting region A, the cutting line A 1 、A 2 …An The corresponding cutting depths H 1 、H 2 …H n increase sequentially.

[0026] In some embodiments of the present invention, within the second cutting region B, the cutting lines B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n increase sequentially.

[0027] In some embodiments of the present invention, the cutting line A 1 、A 2 …A n The corresponding cutting depths H 1 、H 2 …H n are all not less than 0.1D and not greater than 0.4D.

[0028] In some embodiments of the present invention, the cutting line B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n are all not less than 0.1D and not greater than 0.4D.

[0029] In some embodiments of the present invention, within the first cutting region A, cutting is performed sequentially along the cutting line A 1 、A 2 …A n 。

[0030] In some embodiments of the present invention, within the second cutting region B, cutting is performed sequentially along the cutting line B 1 、B 2 …B n 。

[0031] In some embodiments of the present invention, within the first cutting region A, the distance L between adjacent cutting lines A is all equal.

[0032] In some embodiments of the present invention, within the second cutting region B, the distance L between adjacent cutting lines B is all equal.

[0033] In some embodiments of the present invention, within the first cutting region A, the distance between adjacent cutting lines is L A is 0.5D ≤ LA ≤0.7D.

[0034] In some embodiments of the present invention, within the second cutting region B, the distance between adjacent cutting lines is L B is 0.5D ≤ L B ≤0.7D.

[0035] In some embodiments of the present invention, the method further includes:

[0036] Continuing to cut the first extension along the cutting line B 1 to complete the cutting between the I-shaped silicon rod of the first extension and the second cutting region B;

[0037] Continuing to cut the second extension along the cutting line B 1 to complete the cutting between the I-shaped silicon rod of the second extension and the second cutting region B.

[0038] In some embodiments of the present invention, the angle between the cutting direction along the cutting line X and the first plane is 85 - 95°, wherein the second direction is perpendicular to the first direction and parallel to the reference line Y, and the first plane is formed by the first direction and the second direction.

[0039] In some embodiments of the present invention, along the cutting line A 1 、A 2 …A n the angles between the cutting directions and the first plane are all 85 - 95°.

[0040] In some embodiments of the present invention, along the cutting line B 1 、B 2 …B n the angles between the cutting directions and the first plane are all 85 - 95°.

[0041] The additional aspects and advantages of the present invention will be partly given in the following description, partly will become obvious from the following description, or be understood through the practice of the present invention. Description of the Drawings

[0042] The above and / or additional aspects and advantages of the present invention will become obvious and easy to understand from the description of the embodiments in conjunction with the following drawings, wherein:

[0043] Figure 1 is a schematic top view of a method for cutting a U-shaped silicon rod according to an embodiment of the present invention;

[0044] Figure 2 is a schematic front view of a method for cutting a U-shaped silicon rod according to another embodiment of the present invention. Detailed implementation mode

[0045] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are intended to explain the present invention, but should not be construed as limiting the present invention.

[0046] The present invention provides a method for cutting a U-shaped silicon rod. According to an embodiment of the present invention, referring to the attached Figure 1 and attached Figure 2 , the above method includes: The U-shaped silicon rod includes a first extension portion, a second extension portion, and a bending portion. The first extension portion extends from one side of the bending portion along a first direction, the second extension portion extends from the other side of the bending portion along the first direction. The cross-sections of the first extension portion and the second extension portion perpendicular to the first direction are both circular. The diameters of the circular cross-sections of the first extension portion and the second extension portion perpendicular to the first direction are both D. The circular cross-section at the connection position of the first extension portion and the bending portion is circle a, and the circular cross-section at the connection position of the second extension portion and the bending portion is circle b. The bending portion is symmetric about the center line P. The method includes: Let the line connecting the center of circle a and the center of circle b be the reference line Y, and the reference line Y is perpendicular to the first direction; Determine the cutting line X according to the reference line Y. The cutting line X is provided on the side of the reference line Y away from the bending portion, and the cutting line X is parallel to the reference line Y. The perpendicular distance between the cutting line X and the reference line Y is L, and L is not less than 2D. Thus, it is ensured that the mechanical stress at the position of the cutting line X is small. When the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the U-shaped silicon rod is not likely to break, reducing the loss rate of the U-shaped silicon rod and reducing the operation risk during the cutting and separation process; Let the area of the U-shaped silicon rod between the cutting line X and the reference line Y be the first cutting area A, and starting from the cutting line X, extend along the first direction away from the bending portion to form the second cutting area B; Along the direction from the reference line Y to the cutting line X, determine n cutting lines A 1 、A 2 …A n in the first cutting area A. Cut along the cutting lines A 1 、A 2 …A n , and the cutting depths H 1 、H 2 …H n corresponding to the cutting lines A 1 、H 2 …H nare all less than D, where n is an integer not less than 2. Thus, during the process of cutting the U-shaped silicon rod along the above-mentioned cutting line A 1 、A 2 …A n when cutting the U-shaped silicon rod, the mechanical stress of the U-shaped silicon rod is gradually released, and the mechanical stress at the position of the cutting line X gradually decreases. When subsequently cutting and separating the U-shaped silicon rod along the cutting line X, the U-shaped silicon rod is not prone to breakage, reducing the loss rate of the U-shaped silicon rod and reducing the operation risk during the cutting and separation process; along the direction from far away from the above-mentioned cutting line X to the above-mentioned cutting line X, n cutting lines B 1 、B 2 …B n are determined in the above-mentioned second cutting area B. Along the above-mentioned cutting line B 1 、B 2 …B n for cutting, and the corresponding cutting depths H 1 、H 2 …H n of the above-mentioned cutting line B 1 、H 2 …H n are all less than D, where n is an integer not less than 2. Thus, during the process of cutting the U-shaped silicon rod along the above-mentioned cutting line A 1 、A 2 …A n when cutting the U-shaped silicon rod, the mechanical stress of the U-shaped silicon rod is gradually released. When subsequently cutting and separating the U-shaped silicon rod along the cutting line X, the U-shaped silicon rod is not prone to breakage, reducing the loss rate of the U-shaped silicon rod and reducing the operation risk during the cutting and separation process; cutting along the above-mentioned cutting line X, and the cutting depth H of the above-mentioned cutting line X is equal to D to complete the cutting between the above-mentioned bending part and the above-mentioned first extension part and the above-mentioned second extension part. Thus, the fracture probability of the U-shaped silicon rod during the cutting and separation process is significantly reduced, the loss of the U-shaped silicon rod is significantly reduced, the yield of the U-shaped silicon rod is greatly improved, and the operation risk during the cutting and separation process is reduced.

[0047] According to a specific embodiment of the present invention, the diameters D of the above-mentioned first extension part and the above-mentioned second extension part are both not greater than 180 mm, and the vertical distance between the above-mentioned cutting line X and the above-mentioned reference line Y is L 1 ,L 1 has a value range of 2D≤L 1 ≤3D. Thus, controlling the above-mentioned L 1 within the above range not only ensures that the mechanical stress at the position of the cutting line X is small, and the U-shaped silicon rod is not prone to breakage when cutting and separating the U-shaped silicon rod along the cutting line X, but also avoids wasting the U-shaped silicon rod. It can be understood that if L 1Too small, the mechanical stress at the position of the cutting line X is too large. When cutting and separating the U-shaped silicon rod along the cutting line X, the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separating process. If L 1 is too large, it will cause waste of the U-shaped silicon rod and increase the loss rate of the U-shaped silicon rod.

[0048] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, the number of cutting times in the above-mentioned first cutting area A is n 1 , n 1 has a value range of 2 ≤ n 1 ≤ 5. Thus, controlling the above-mentioned n 1 within the above range can not only ensure that the mechanical stress of the U-shaped silicon rod can be gradually released, making the mechanical stress at the position of the cutting line X gradually decrease, but also avoid a significant increase in the actual cutting difficulty. It can be understood that if n 1 is too small, during the process of cutting the U-shaped silicon rod along the above-mentioned cutting line A 1 , A 2 …A n , the release amount of the mechanical stress of the U-shaped silicon rod is too small. When subsequently cutting and separating the U-shaped silicon rod along the cutting line X, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separating process. If n 1 is too large, it will cause difficulties in the cutting operation during the actual cutting process, greatly increasing the cutting difficulty.

[0049] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, the number of cutting times in the above-mentioned second cutting area B is n 2 , n 2 has a value range of 2 ≤ n 2 ≤ 5. Thus, controlling the above-mentioned n 2 within the above range can not only ensure that the mechanical stress of the U-shaped silicon rod can be gradually released, making the mechanical stress at the position of the cutting line X gradually decrease, but also avoid a significant increase in the actual cutting difficulty. It can be understood that if n 2 is too small, during the process of cutting the U-shaped silicon rod along the above-mentioned cutting line B 1 , B 2 …B n , the release amount of the mechanical stress of the U-shaped silicon rod is too small. When subsequently cutting and separating the U-shaped silicon rod along the cutting line X, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separating process. If n 2 is too large, it will cause difficulties in the cutting operation during the actual cutting process, greatly increasing the cutting difficulty.

[0050] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the above-mentioned second extension part are both not greater than 180 mm, within the above-mentioned first cutting area A, the cutting line A 1 、A 2 …A n The corresponding cutting depths H 1 、H 2 …H n increase successively. Since the mechanical stress of the first cutting area A closer to the bending part is greater, setting the cutting line A 1 、A 2 …A n The corresponding cutting depths H 1 、H 2 …H n increase successively, ensuring that when cutting along the cutting line A 1 、A 2 …A n the stress release amount of each cut is basically the same, thereby significantly reducing the fracture probability of the U-shaped silicon rod during the cutting and separation process and significantly reducing the operation risk during the cutting and separation process.

[0051] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the above-mentioned second extension part are both not greater than 180 mm, within the above-mentioned second cutting area B, the cutting line B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n increase successively. Since the mechanical stress of the first cutting area B closer to the bending part is greater, setting the cutting line B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n increase successively, ensuring that when cutting along the cutting line B 1 、B 2 …B n the stress release amount of each cut is basically the same, thereby significantly reducing the fracture probability of the U-shaped silicon rod during the cutting and separation process and significantly reducing the operation risk during the cutting and separation process.

[0052] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the above-mentioned second extension part are both not greater than 180 mm, the above-mentioned cutting line A 1 、A 2 …A nThe corresponding cutting depths H in sequence 1 、H 2 …H n are all not less than 0.1D and not greater than 0.3D, further ensuring that along the cutting lines A 1 、A 2 …A n cutting the U-shaped zone-melted silicon rod can gradually release the mechanical stress of the U-shaped silicon rod, making the mechanical stress at the position of the cutting line X gradually decrease. The inventor found that if the cutting depths H 1 、A 2 …A n corresponding to the cutting lines A in sequence 1 、H 2 …H n are too large, the mechanical stress released by each cutting is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process. If the cutting depths H 1 、A 2 …A n corresponding to the cutting lines A in sequence 1 、H 2 …H n are too small, the stress released by each cutting is too small. When subsequently cutting and separating the U-shaped silicon rod along the cutting line X, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process.

[0053] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, the cutting depths H 1 、B 2 …B n corresponding to the cutting lines B in sequence 1 、H 2 …H n are all not less than 0.1D and not greater than 0.3D, further ensuring that along the cutting lines B 1 、B 2 …B n cutting the U-shaped zone-melted silicon rod can gradually release the mechanical stress of the U-shaped silicon rod, making the mechanical stress at the position of the cutting line X gradually decrease. The inventor found that if the cutting depths H 1 、B 2 …B n corresponding to the cutting lines B in sequence 1 、H 2 …H n are too large, the mechanical stress released by each cutting is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process. If the cutting lines B 1 、B 2 …Bn The corresponding cutting depths H in sequence 1 、H 2 …H n are too small, and the stress released by each cutting is too small. When the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process.

[0054] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, within the above-mentioned first cutting area A, along the above-mentioned cutting line A in sequence 1 、A 2 …A n for cutting. Since the mechanical stress of the first cutting area A closer to the bending part is greater, it is thus set to cut along the above-mentioned cutting line A in sequence 1 、A 2 …A n for cutting, further ensuring that when cutting the U-shaped zone-melted silicon rod along the cutting line A 1 、A 2 …A n the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced.

[0055] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, within the above-mentioned second cutting area B, along the above-mentioned cutting line B in sequence 1 、B 2 …B n for cutting. Since the mechanical stress of the first cutting area B closer to the bending part is greater, it is set to cut along the above-mentioned cutting line B in sequence 1 、B 2 …B n for cutting, further ensuring that when cutting the U-shaped zone-melted silicon rod along the cutting line B 1 、B 2 …B n the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced.

[0056] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, within the above-mentioned first cutting area A, the distance L between adjacent cutting lines A is all equal. Thus, by adopting the equidistant cutting method, it is further ensured that the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced. At the same time, the equidistant cutting method is easier to implement and can simplify the actual operation difficulty.

[0057] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, within the above-mentioned second cutting area B, the distance L between adjacent cutting lines B are all equal. Thus, the equal-distance cutting method can be realized, which further ensures that the mechanical stress of the U-shaped silicon rod can be gradually released, so that the mechanical stress at the position of the cutting line X gradually decreases. At the same time, the equal-distance cutting method is easier to realize and can simplify the actual operation difficulty.

[0058] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both not greater than 180 mm, within the above-mentioned first cutting area A, the distance between adjacent cutting lines is L A is 0.5D ≤ L A ≤ 0.7D. Thus, it further ensures that the mechanical stress of the U-shaped silicon rod can be gradually released, so that the mechanical stress at the position of the cutting line X gradually decreases. The inventor found that if the distance between adjacent cutting lines is too large, the number of cutting times will be too small. Along the cutting line A 1 、A 2 …A n After cutting the U-shaped zone-melted silicon rod, when subsequently cutting and separating the U-shaped silicon rod along the cutting line X, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, which will increase the loss rate of the U-shaped silicon rod and increase the operation risk during the cutting and separating process. If the distance between adjacent cutting lines is too small, it will be difficult to use the cutting tool during the actual cutting process, and the cutting difficulty will be greatly increased.

[0059] According to another specific embodiment of the present invention, the diameters D of the above-mentioned first extension part and the second extension part are greater than 180 mm, and the vertical distance between the above-mentioned cutting line X and the reference line Y is L 2 , L 2 has a value range of 4D ≤ L 2 ≤ 6D. Thus, by controlling the above-mentioned L 2 within the above range, it not only ensures that the mechanical stress at the position of the cutting line X is small, and when cutting and separating the U-shaped silicon rod along the cutting line X, the U-shaped silicon rod is not easily broken, but also avoids wasting the U-shaped silicon rod. It can be understood that if L 2 is too small, the mechanical stress at the position of the cutting line X is too large, and when cutting and separating the U-shaped silicon rod along the cutting line X, the U-shaped silicon rod is extremely prone to breakage, and the operation risk during the cutting and separating process is greatly increased. If L 2 is too large, it will cause waste of the U-shaped silicon rod and increase the loss rate of the U-shaped silicon rod.

[0060] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, the number of cutting times in the above-mentioned first cutting area A is n 3 , n 3 ranges from 4 ≤ n 3 ≤ 7. Thus, controlling the above-mentioned n 3 within the above range not only ensures that the mechanical stress of the U-shaped silicon rod can be gradually released, making the mechanical stress at the position of the cutting line X gradually decrease, but also avoids a significant increase in the actual cutting difficulty. It can be understood that if n 3 is too small, during the process of cutting the U-shaped silicon rod along the above-mentioned cutting line A 1 , A 2 …A n , the release amount of the mechanical stress of the U-shaped silicon rod is too small. When the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to fracture, greatly increasing the operation risk during the cutting and separation process. If n 3 is too large, it will lead to difficult cutting operations during the actual cutting process, and the cutting difficulty will increase significantly.

[0061] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, the number of cutting times in the above-mentioned second cutting area B is n 4 , n 4 ranges from 4 ≤ n 4 ≤ 7. Thus, controlling the above-mentioned n 4 within the above range not only ensures that the mechanical stress of the U-shaped silicon rod can be gradually released, making the mechanical stress at the position of the cutting line X gradually decrease, but also avoids a significant increase in the actual cutting difficulty. It can be understood that if n 4 is too small, during the process of cutting the U-shaped silicon rod along the above-mentioned cutting line A 1 , A 2 …A n , the release amount of the mechanical stress of the U-shaped silicon rod is too small. When the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to fracture, greatly increasing the operation risk during the cutting and separation process. If n 4 is too large, it will lead to difficult cutting operations during the actual cutting process, and the cutting difficulty will increase significantly.

[0062] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, in the above-mentioned first cutting area A, the corresponding cutting depths H of the above-mentioned cutting lines A 1 , A 2 …A n in sequence1 , H 2 …H n Increase sequentially. Since the mechanical stress of the first cutting area A closer to the bending part is greater, set the cutting line A 1 , A 2 …A n The corresponding cutting depths H 1 , H 2 …H n Increase sequentially, which can ensure that along the cutting line A 1 , A 2 …A n When cutting, the stress release amount of each cutting basically remains the same, thereby significantly reducing the fracture probability of the U-shaped silicon rod during the cutting and separation process and significantly reducing the operation risk during the cutting and separation process.

[0063] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, in the above-mentioned second cutting area B, the cutting line B 1 , B 2 …B n The corresponding cutting depths H 1 , H 2 …H n Increase sequentially. Since the mechanical stress of the first cutting area B closer to the bending part is greater, set the cutting line B 1 , B 2 …B n The corresponding cutting depths H 1 , H 2 …H n Increase sequentially, which can ensure that along the cutting line B 1 , B 2 …B n When cutting, the stress release amount of each cutting basically remains the same, thereby significantly reducing the fracture probability of the U-shaped silicon rod during the cutting and separation process and significantly reducing the operation risk during the cutting and separation process.

[0064] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, the cutting line A 1 , A 2 …A n The corresponding cutting depths H 1 , H 2 …H n Are all not less than 0.1D and not greater than 0.4D, further ensuring that along the cutting line A 1 , A 2 …A nCutting the U-shaped zone-melted silicon rod can gradually release the mechanical stress of the U-shaped silicon rod, making the mechanical stress at the position of the cutting line X gradually decrease. The inventor found that if the cutting line A 1 、A 2 …A n The corresponding cutting depths H 1 、H 2 …H n are too large, the mechanical stress released by each cutting is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process. If the cutting line A 1 、A 2 …A n The corresponding cutting depths H 1 、H 2 …H n are too small, the stress released by each cutting is too small. When the U-shaped silicon rod is cut and separated along the cutting line X later, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process.

[0065] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, the cutting lines B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n are all not less than 0.1D and not greater than 0.4D, further ensuring that cutting the U-shaped zone-melted silicon rod along the cutting lines B 1 、B 2 …B n can gradually release the mechanical stress of the U-shaped silicon rod, making the mechanical stress at the position of the cutting line X gradually decrease. The inventor found that if the cutting lines B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H n are too large, the mechanical stress released by each cutting is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process. If the cutting lines B 1 、B 2 …B n The corresponding cutting depths H 1 、H 2 …H nThe size is too small, and the stress released by each cutting is too small. When the U-shaped silicon rod is cut and separated along the cutting line X subsequently, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely prone to breakage, greatly increasing the operation risk during the cutting and separation process.

[0066] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, within the above-mentioned first cutting area A, successively along the above-mentioned cutting line A 1 、A 2 …A n perform cutting. Since the mechanical stress of the first cutting area A closer to the bending part is greater, it is thus set to successively perform cutting along the above-mentioned cutting line A 1 、A 2 …A n perform cutting, further ensuring that when cutting the U-shaped zone-melted silicon rod along the cutting line A 1 、A 2 …A n the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced.

[0067] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, within the above-mentioned second cutting area B, successively along the above-mentioned cutting line B 1 、B 2 …B n perform cutting. Since the mechanical stress of the first cutting area B closer to the bending part is greater, it is set to successively perform cutting along the above-mentioned cutting line B 1 、B 2 …B n perform cutting, further ensuring that when cutting the U-shaped zone-melted silicon rod along the cutting line B 1 、B 2 …B n the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced.

[0068] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, within the above-mentioned first cutting area A, the distance L A between adjacent cutting lines is equal. Thus, by adopting the equidistant cutting method, it is further ensured that the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced. At the same time, the equidistant cutting method is easier to implement and can simplify the actual operation difficulty.

[0069] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, within the above-mentioned second cutting area B, the distance L between adjacent cutting lines B are all equal. Thus, the method of equidistant cutting can be realized, which further ensures that the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced. At the same time, the method of equidistant cutting is easier to realize and can simplify the actual operation difficulty.

[0070] According to another specific embodiment of the present invention, when the diameters D of the above-mentioned first extension part and the second extension part are both greater than 180 mm, within the above-mentioned first cutting area A, the distance between adjacent cutting lines is L A is 0.5D ≤ L A ≤ 0.7D. Thus, it further ensures that the mechanical stress of the U-shaped silicon rod can be gradually released, and the mechanical stress at the position of the cutting line X is gradually reduced. The inventor found that if the distance between adjacent cutting lines is too large, the number of cutting times will be too small. When cutting the U-shaped zone-melted silicon rod along the cutting lines A 1 、A 2 …A n and then cutting and separating the U-shaped silicon rod along the cutting line X later, the mechanical stress at the position of the cutting line X is too large, and the U-shaped silicon rod is extremely easy to break, which will increase the loss rate of the U-shaped silicon rod and increase the operation risk during the cutting and separating process. If the distance between adjacent cutting lines is too small, it will be not easy to use the cutting tool during the actual cutting process, and the cutting difficulty will be greatly increased.

[0071] According to another specific embodiment of the present invention, the method for cutting the U-shaped silicon rod further includes: continuing to cut the above-mentioned first extension part along the cutting line B 1 to complete the cutting between the I-shaped silicon rod of the above-mentioned first extension part and the above-mentioned second cutting area B. Thus, the I-shaped silicon rod of the completed cutting first extension part can be subjected to subsequent rounding, taper grinding, and pickling treatments; continuing to cut the above-mentioned second extension part along the cutting line B 1 to complete the cutting between the I-shaped silicon rod of the above-mentioned second extension part and the above-mentioned second cutting area B. Thus, the I-shaped silicon rod of the completed cutting second extension part can be subjected to subsequent rounding, taper grinding, and pickling treatments.

[0072] According to another specific embodiment of the present invention, the angle between the cutting direction along the cutting line X and the first plane is 85 - 95°, thereby reducing the difficulty of cutting and separating along the cutting line X and improving the cutting efficiency.

[0073] It should be noted that: the second direction is perpendicular to the above-mentioned first direction and parallel to the above-mentioned reference line Y, and the above-mentioned first plane is formed by the above-mentioned first direction and the above-mentioned second direction.

[0074] According to yet another specific embodiment of the present invention, along the above-mentioned cutting line A 1 、A 2 …A n the angles between the cutting directions and the above-mentioned first plane are all 85 - 95°. Thus, the difficulty of cutting along the above-mentioned cutting line A 1 、A 2 …A n can be reduced, thereby improving the cutting efficiency.

[0075] According to yet another specific embodiment of the present invention, along the above-mentioned cutting line B 1 、B 2 …B n the angles between the cutting directions and the above-mentioned first plane are all 85 - 95°. Thus, the difficulty of cutting along the above-mentioned cutting line B 1 、B 2 …B n can be reduced, thereby improving the cutting efficiency.

[0076] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for cutting a U-shaped silicon rod, characterized in that, the U-shaped silicon rod includes a first extension portion, a second extension portion and a bending portion. The first extension portion is obtained by extending from one side of the bending portion along a first direction. The second extension portion is obtained by extending from the other side of the bending portion along the first direction. The cross-sections of the first extension portion and the second extension portion perpendicular to the first direction are both circular. The diameters of the circular cross-sections of the first extension portion and the second extension portion perpendicular to the first direction are both D. The circular cross-section at the connection position of the first extension portion and the bending portion is circle a, and the circular cross-section at the connection position of the second extension portion and the bending portion is circle b. The bending portion is symmetric about the center line P. The method includes: setting the connection line between the center of circle a and the center of circle b as the reference line Y, and the reference line Y is perpendicular to the first direction; determining the cutting line X according to the reference line Y. The cutting line X is arranged on the side of the reference line Y away from the bending portion, and the cutting line X is parallel to the reference line Y. The perpendicular distance between the cutting line X and the reference line Y is L, and L is not less than 2D; setting the area of the U-shaped silicon rod between the cutting line X and the reference line Y as the first cutting area A, and starting from the cutting line X, extending along the first direction away from the bending portion to form a second cutting area B; Along the direction from the reference line Y to the cutting line X, n cutting lines A are determined in the first cutting area A. 1 , A 2 …A n , along the cutting line A 1 , A 2 …A n Cutting is performed, and the cutting line A 1 , A 2 …A n The corresponding cutting depth H 1 , H 2 …H n are all less than D, where n is an integer not less than 2; n cutting lines B are determined within the second cutting area B along the direction from away from the cutting line X to the cutting line X 1 、B 2 …B n ; cutting is performed along the cutting lines B 1 、B 2 …B n , and the corresponding cutting depths H 1 、H 2 …H n of the cutting lines B 1 、H 2 …H n are all less than D, where n is an integer not less than 2; cutting along the cutting line X, and the cutting depth H of the cutting line X is equal to D to complete the cutting between the bending portion and the first extension portion and the second extension portion.

2. The method according to claim 1, characterized in that, The diameters D of both the first extension part and the second extension part are not greater than 180 mm, and the vertical distance between the cutting line X and the reference line Y is L 1 , L 1 takes values in the range of 2D ≤ L 1 ≤ 3D.

3. The method according to claim 2, characterized in that, The number of cutting times within the first cutting area A is n 1 , n 1 The value range of 1 is 2 ≤ n ≤ 5; The number of cutting times within the second cutting area B is n 2 , n 2 The value range of 2 is 2 ≤ n ≤ 5; Within the first cutting area A, the cutting line A 1 , A 2 …A n corresponds to the cutting depths H 1 , H 2 …H n increasing successively; Within the second cutting area B, the cutting line B 1 , B 2 …B n corresponds to the cutting depths H 1 , H 2 …H n increasing in sequence; The cutting line A 1 、A 2 …A n The corresponding cutting depths H 1 、H 2 …H n are all not less than 0.1D and not greater than 0.3D; The cutting line B 1 , B 2 …B n The corresponding cutting depths H 1 , H 2 …H n are all not less than 0.1D and not greater than 0.3D.

4. The method according to claim 1, characterized in that, The diameters D of both the first extension part and the second extension part are greater than 180 mm, and the vertical distance between the cutting line X and the reference line Y is L 2 , L 2 has a value range of 4D ≤ L 2 ≤ 6D.

5. The method according to claim 4, characterized in that, The number of cutting times within the first cutting area A is n 3 , n 3 The value range of 3 is 4 ≤ n ≤ 7; The number of cutting times within the second cutting area B is n 4 , n 4 has a value range of 4 ≤ n 4 ≤ 7; Within the first cutting area A, the cutting line A 1 , A 2 …A n corresponds to the cutting depths H 1 , H 2 …H n increasing in sequence; Within the second cutting area B, the cutting line B 1 , B 2 …B n corresponds to the cutting depths H 1 , H 2 …H n increasing successively; The cutting line A 1 , A 2 …A n The corresponding cutting depths H 1 , H 2 …H n are all not less than 0.1D and not greater than 0.4D; The cutting line B 1 , B 2 …B n The corresponding cutting depths H 1 , H 2 …H n are all not less than 0.1D and not greater than 0.4D.

6. The method according to any one of claims 1-5, characterized in that, Within the first cutting area A, successively cut along the cutting line A 1 , A 2 … A n ; Within the second cutting area B, successively cut along the cutting lines B 1 , B 2 …B n in sequence.

7. The method according to any one of claims 1-5, characterized in that, Within the first cutting area A, the distance L between adjacent cutting lines A are all equal; Within the second cutting area B, the distance L between adjacent cutting lines B are all equal.

8. The method according to any one of claims 1-5, characterized in that, Within the first cutting area A, the distance between adjacent cutting lines is L A where 0.5D ≤ L A ≤ 0.7D; Within the second cutting area B, the distance between adjacent cutting lines is L B which is 0.5D ≤ L B ≤ 0.7D.

9. The method according to any one of claims 1-5, characterized in that, the method further includes: Along cutting line B 1 Continue to cut the first extension portion to complete the cutting between the I-shaped silicon rod of the first extension portion and the second cutting area B; Along cutting line B 1 Continue to cut the second extension part to complete the cutting between the I-shaped silicon rod of the second extension part and the second cutting area B.

10. The method according to claim 1, characterized in that, the angle between the cutting direction along the cutting line X and the first plane is 85-95°. Wherein, the second direction is perpendicular to the first direction and parallel to the reference line Y, and the first plane is formed by the first direction and the second direction.

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