Substrate processing device and processing method

Abstract

The present invention provides a substrate processing device with improved operability, comprising: a first tank for storing cleaning liquid, with a first opening formed on the upper surface; and a first ultrasonic oscillator, which is arranged in the first tank and provides ultrasonic waves toward the surface of the cleaning liquid exposed through the first opening and forms a protruding water film on the surface of the cleaning liquid. The substrate is not immersed in the tank, and one surface of the substrate is arranged adjacent to the first opening, and the one surface of the substrate is cleaned by the water film.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a processing method. Background Art

[0002] Inkjet printing equipment discharges ink onto a test film to measure impact accuracy. Since the used test film is discarded, this incurs significant costs. Therefore, there is a need for a continuous cleaning device that can clean the test film, allowing for reuse and improving operability.

[0003] Prior art literature

[0004] Patent Literature

[0005] (Patent Document 1) Korean Patent Publication No. 2001-0057041 (July 4, 2001) Summary of the Invention

[0006] Issues to be addressed

[0007] An object of the present invention is to provide a substrate processing apparatus with improved operability.

[0008] Another problem to be solved by the present invention is to provide a substrate processing method with improved operability.

[0009] The problems to be solved by the present invention are not limited to the above-mentioned contents, and those skilled in the art can clearly understand other problems to be solved that are not mentioned through the following description.

[0010] Solutions to the Problem

[0011] One aspect of the substrate processing device of the present invention for achieving the above-mentioned problems includes: a first tank for storing a cleaning liquid, having a first opening formed on the upper surface; and a first ultrasonic oscillator, which is arranged in the first tank and provides ultrasonic waves toward the surface of the cleaning liquid exposed through the first opening, forming a protruding water film on the surface of the cleaning liquid, the substrate is not immersed in the tank, and one surface of the substrate is arranged adjacent to the first opening, and the one surface of the substrate is cleaned by the water film.

[0012] Another aspect of the substrate processing apparatus of the present invention for achieving the above-mentioned object may include: a first tank storing cleaning liquid and having a first opening formed on an upper surface thereof; a first ultrasonic oscillator disposed in the first tank and supplying ultrasonic waves of a first frequency toward a surface of the cleaning liquid exposed through the first opening, thereby forming a protruding first water film on the surface of the cleaning liquid; a second tank disposed on one side of the first tank and storing cleaning liquid and having a second opening formed on an upper surface thereof; and a second ultrasonic oscillator disposed in the second tank and supplying ultrasonic waves of a second frequency greater than the first frequency toward the surface of the cleaning liquid exposed through the second opening, thereby forming a protruding second water film on the surface of the cleaning liquid. A substrate wound in a roll is unwound and sequentially passes through an upper side of the first tank and an upper side of the second tank without being immersed in the first and second tanks. One surface of the substrate passes adjacent to the first and second openings, and the one surface of the substrate is cleaned by the first and second water films. The first tank includes a first sidewall not opposing the second tank and a second sidewall opposing the second tank, wherein a second height of the second sidewall is higher than the first height of the first sidewall.

[0013] One aspect of the substrate processing method of the present invention for achieving the above-mentioned other problem may be, comprising: providing a substrate processing device, the substrate processing device comprising a tank for storing a cleaning liquid and having an opening formed on an upper surface, and an ultrasonic oscillator immersed in the tank; the ultrasonic oscillator provides ultrasonic waves toward the surface of the cleaning liquid exposed through the opening, forming a protruding water film on the surface of the cleaning liquid; a substrate wound into a roll is unwound, and one surface of the substrate passes adjacent to the opening of the tank, and the substrate is not immersed in the tank, and the one surface of the substrate is cleaned by the water film.

[0014] Details of other embodiments will be included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 FIG. 1 is a schematic diagram for explaining a substrate processing apparatus according to a first embodiment of the present invention.

[0016] Figure 2 Is used to illustrate Figure 1 The cleaning section is shown in FIG.

[0017] Figure 3 It is used to illustrate that a plurality of first ultrasonic oscillators are Figure 2 Diagram showing the configuration inside the cleaning unit.

[0018] Figure 4FIG. 1 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a second embodiment of the present invention.

[0019] Figure 5 FIG. 1 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a third embodiment of the present invention.

[0020] Figure 6 FIG. 4 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a fourth embodiment of the present invention.

[0021] Figure 7 FIG. 5 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a fifth embodiment of the present invention.

[0022] Figure 8 FIG. 1 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a sixth embodiment of the present invention.

[0023] Figure 9 FIG. 1 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a seventh embodiment of the present invention.

[0024] Figure 10 FIG. 8 is a schematic diagram for explaining a cleaning portion used in a substrate processing apparatus according to an eighth embodiment of the present invention.

[0025] Figure 11 FIG. 1 is a schematic diagram for explaining a cleaning portion used in a substrate processing apparatus according to a ninth embodiment of the present invention.

[0026] Figure 12 Is used to illustrate Figure 11 FIG. 1 is a perspective view of another example of a gas supplier shown in FIG.

[0027] Figure 13 is a flowchart for illustrating a substrate processing method according to various embodiments of the present invention.

[0028] Description of Reference Numerals

[0029] 10: Base plate 20: Driving roller

[0030] 50: Head 100: Cleaning part

[0031] 110: First tank 120: First ultrasonic oscillator

[0032] 130: Surface 131: Water film

[0033] 140: Cleaning liquid supply unit 150: Cleaning liquid discharge unit DETAILED DESCRIPTION

[0034] Below, preferred embodiments of the present invention are described in detail with reference to the accompanying drawings. The advantages, features, and methods for achieving the same will become apparent through reference to the embodiments described in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of ways. This embodiment is provided only to complete the disclosure of the present invention and to fully inform those skilled in the art of the scope of the present invention. The present invention is defined solely by the scope of the claims. The same reference numerals throughout the specification represent the same components.

[0035] As shown in the figures, spatially relative terms such as "below", "beneath", "lower", "above", "upper", etc. are used to easily describe the relationship between one element or constituent element and another element or constituent element. Spatially relative terms should be understood as terms that include different directions of elements when in use or in operation in addition to the directions shown in the figures. For example, when the elements shown in the figures are turned over, the elements described as "below" or "beneath" other elements can be placed "above" other elements. Therefore, the exemplary term "below" can include both below and above directions. Elements can also be oriented in other directions, so spatially relative terms can be interpreted according to orientation.

[0036] Although the terms "first," "second," etc. are used to describe various elements, components, and / or regions, these elements, components, and / or regions are certainly not limited to these terms. These terms are used solely to distinguish one element, component, or region from other elements, components, or regions. Therefore, within the technical concept of the present invention, the first element, first component, or first region mentioned below may also be the second element, second component, or second region.

[0037] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components will be given the same reference numerals regardless of the figure numbers, and repeated description thereof will be omitted.

[0038] Figure 1 FIG. 1 is a schematic diagram for explaining a substrate processing apparatus according to a first embodiment of the present invention. Figure 2 Is used to illustrate Figure 1 The cleaning section is shown in FIG. Figure 3 It is used to illustrate that a plurality of first ultrasonic oscillators are Figure 2 Diagram showing the configuration inside the cleaning unit.

[0039] First, refer to Figure 1The substrate processing apparatus according to the first embodiment of the present invention includes a substrate 10 , a head 50 , a cleaning unit 100 , and the like.

[0040] The substrate 10 can be rotated in one direction by a plurality of driving rollers 20. Thus, the substrate 10 can be moved along the moving direction DR. In the figure, the moving direction DR is shown as the direction from the first side ( Figure 2 R direction) toward the second side ( Figure 2 The substrate 10 is a flexible substrate, such as a film wound into a roll, but is not limited thereto. For example, the substrate 10 may be a substrate (glass substrate, silicon substrate, etc.) fixed or arranged on a belt that rotates in one direction via the drive roller 20.

[0041] The head 50 is arranged on the upper side of the substrate 10 which is rotated by the driving roller 20 ( Figure 2 U direction), and discharges ink 51 onto one surface of the substrate 10.

[0042] The cleaning unit 100 is arranged on the lower side of the substrate 10 which is rotated by the driving roller 20 ( Figure 2 The cleaning unit 100 cleans the impact group 52 formed on one surface of the substrate 10 by the discharged ink 51. The cleaning unit 100 cleans the impact group 52 using a water film generated by the oscillation of ultrasonic waves.

[0043] Among them, reference Figure 2 The cleaning unit 100 includes a first tank 110, a first ultrasonic oscillator 120, a cleaning liquid supply unit 140, a cleaning liquid discharge unit 150, and the like.

[0044] The first tank 110 stores a cleaning liquid and has a first opening 110a formed on its upper surface. The cleaning liquid can be various liquids used to clean the bullet group 52, such as deionized water (DIW), but is not limited thereto.

[0045] A first ultrasonic oscillator 120 is provided in the first tank 110 .

[0046] The first ultrasonic oscillator 120 provides ultrasonic waves toward the surface 130 of the cleaning liquid exposed through the first opening 110 a , thereby forming a protruding water film 131 on the surface 130 of the cleaning liquid.

[0047] The height HO of the protruding water film 131 can be adjusted by adjusting the oscillation output of the first ultrasonic oscillator 120. In the substrate processing apparatus according to the first embodiment of the present invention, the height HO of the protruding water film 131 can be, for example, about 10 to 15 mm from the cleaning liquid surface 130, but is not limited thereto.

[0048] The target substance to be cleaned can be changed by adjusting the oscillation frequency of the first ultrasonic oscillator 120 .

[0049] For example, the oscillation frequency can be divided into ultrasonic and megasonic.

[0050] Ultrasonic waves can range from tens of kHz to hundreds of kHz, for example, from 20 to 400 kHz. Megasonic waves can be used for cleaning using cavitation. When ultrasonic waves are applied to a cleaning solution, bubbles within the solution collapse, destroying or isolating foreign matter from the object being cleaned.

[0051] Megasonic waves can reach frequencies of several MHz, for example, in the range of 700kHz to 1.2MHz. They can remove sub-micron-sized particles. Unlike ultrasonic waves, megasonic waves do not cause cavitation, but instead increase particle acceleration to remove foreign matter from the object being cleaned.

[0052] Ultrasonic waves can remove relatively large foreign matter (for example, several μm), and megasonic waves can remove relatively small foreign matter (for example, 1 μm or less).

[0053] The first ultrasonic oscillator 120 generates ultrasonic waves having an oscillation frequency within an appropriate range in consideration of the size of the target object.

[0054] The substrate 10 is not immersed in the first tank 110 , but one surface of the substrate 10 passes adjacent to the first opening 110 a . The one surface of the substrate 10 is cleaned by the protruding water film 131 formed by the first ultrasonic oscillator 120 .

[0055] Figure 3 This is a top view of the first tank 110 as viewed from above. As shown in the figure, the substrate 10 can move along the movement direction DR (for example, from the first side R to the second side L). A plurality of first ultrasonic oscillators 120 can be provided in the first tank 110. The plurality of first ultrasonic oscillators 120 can be arranged in parallel with the width direction of the substrate 10 in the first tank 110. Although the figure shows the plurality of first ultrasonic oscillators 120 arranged in a row from the front F to the rear B, this is not limited to this. By arranging the plurality of first ultrasonic oscillators 120 parallel to the width direction of the substrate 10, foreign matter (i.e., including the impact group 52) on the front surface of the substrate 10 can be effectively cleaned.

[0056] Refer again Figure 2 The first tank 110 includes a supply port 141 for supplying the cleaning liquid and a discharge port 151 for discharging the cleaning liquid.

[0057] The supply port 141 is connected to the cleaning liquid supply unit 140. Although not specifically shown, the cleaning liquid supply unit 140 may include a storage tank for storing the cleaning liquid, a pump for supplying the cleaning liquid from the storage tank, and / or a valve for adjusting the supply amount of the cleaning liquid.

[0058] The discharge port 151 is connected to the cleaning liquid discharge unit 150. Although not specifically shown in the figure, the cleaning liquid discharge unit 150 may include a storage tank for storing the discharged cleaning liquid and / or a recovery machine for recycling the discharged cleaning liquid.

[0059] Specifically, when the substrate 10 moves from the first side R to the second side L, the supply port 141 is located on the second side wall 110L of the first tank 110, which is located on the second side L. Furthermore, the discharge port 151 is located on the first side wall 110R of the first tank 110, which is located on the first side R. Furthermore, in the first tank 110, the height of the supply port 141 is configured to be lower than that of the discharge port 151. Furthermore, while the substrate 10 is being cleaned, the cleaning liquid is continuously supplied through the supply port 141. Due to the position of the supply port 141 and the cleaning liquid supply method, the cleaning liquid flows from the second side L to the first side R within the first tank 110.

[0060] That is, the substrate 10 moves from the first side R to the second side L, and the cleaning liquid flows from the second side L to the first side R. This prevents the cleaned surface of the substrate 10 from being contaminated again. This is because even if foreign matter that has been detached from the surface of the substrate 10 due to the protruding water film 131 falls onto the surface 130 of the cleaning liquid, it will not re-adhere to the surface of the substrate 10 and will be discharged through the discharge port 151 on the first side R.

[0061] Figure 4 This is a diagram for explaining a cleaning unit used in a substrate processing apparatus according to a second embodiment of the present invention. Figures 1 to 3 The following describes some of the differences in the description.

[0062] Reference Figure 4 The upper surface of the first groove 110 of the cleaning portion 101 is inclined. Therefore, the first opening 110a provided on the upper surface may also be inclined.

[0063] Specifically, when the substrate 10 moves from the first side R to the second side L, a first height H1 of the first sidewall 110R at the first side R is lower than a second height H2 of the second sidewall 110L at the second side L among the sidewalls of the first groove 110 .

[0064] One surface of the substrate 10 should pass adjacent to the first opening 110a of the first groove 110 without colliding with (i.e., not contacting) the second sidewall 110L. The height H0 of the water film 131 should be sufficiently high to clean the one surface of the substrate 10. To this end, the height H0 of the water film 131 can be greater than the difference between the first height H1 and the second height H2 (i.e., H0>H2-H1).

[0065] Since first tank 110 has such a structure (i.e., H2>H1), it is possible to prevent one surface of the cleaned substrate 10 from being contaminated again. If cleaning liquid supply unit 140 continues to supply cleaning liquid in sufficient quantities, the cleaning liquid will not only flow out through discharge port 151, but may also overflow the sidewalls of first tank 110. However, since second height H2 of second sidewall 110L is higher than first height H1 of first sidewall 110R, the cleaning liquid will not overflow toward second sidewall 110L, but will overflow toward first sidewall 110R.

[0066] Since the substrate 10 moves from the first side R to the second side L, the portion of the substrate 10 before contact with the protruding water film 131 (i.e., the substrate 10 located on the first side R) is in an uncleaned state, while the portion of the substrate 10 after contact with the protruding water film 131 (i.e., the substrate 10 located on the second side L) is in a cleaned state. If the cleaning liquid overflows toward the second sidewall 110L, the cleaned substrate 10 may be contaminated again. Therefore, by directing the cleaning liquid to overflow toward the first sidewall 110R, the cleaned substrate 10 can be prevented from being contaminated again.

[0067] Figure 5 This is a diagram for explaining a cleaning unit used in a substrate processing apparatus according to a third embodiment of the present invention. Figures 1 to 4 The differences in the description are explained.

[0068] Reference Figure 5 The cleaning portion 102 includes a first tank 110 and an auxiliary tank 160 surrounding the first tank 110 .

[0069] As described above, the first height H1 of the first sidewall 110R on the first side R is lower than the second height H2 of the second sidewall 110L on the second side L. If the cleaning liquid supplier 140 continues to supply cleaning liquid sufficiently, the cleaning liquid will not overflow toward the second sidewall 110L but toward the first sidewall 110R.

[0070] The auxiliary tank 160 is formed to surround the first tank 110 and temporarily stores the cleaning liquid overflowing from the first tank 110. A drain port 161 is provided at a first side R of the auxiliary tank 160. The drain port 161 is connected to the cleaning liquid discharge portion 150.

[0071] Figure 6 This is a diagram for explaining a cleaning unit used in a substrate processing apparatus according to a fourth embodiment of the present invention. Figures 1 to 4 The differences in the description are explained.

[0072] Reference Figure 6 The movement direction DR1 of the substrate 10 is inclined. The degree of inclination of the movement direction DR1 and the degree of inclination of the first opening 100a can be substantially the same. Even if the movement direction DR of the substrate 10 is not flat, the first groove 110 can be freely repositioned and used within a range where the substrate 10 does not collide with the second sidewall 110L.

[0073] Figure 7 FIG. 5 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a fifth embodiment of the present invention.

[0074] Reference Figure 7 , the substrate 10 moves along the moving direction DR (eg, from the first side R to the second side L).

[0075] A plurality of first ultrasonic oscillators 120 may be disposed in the first groove 110 . The plurality of first ultrasonic oscillators 120 may be arranged in a “<” shape, with the apex of the “<” shape (see 120 a ) facing the second side L.

[0076] If the configuration is as described above and the substrate 10 is moved from the first side R to the second side L, the substrate 10 is cleaned sequentially from the center to the edge. Specifically, the first ultrasonic oscillator 120a, located at the apex of the "<" shape, cleans the substrate 10 starting from the center. If the substrate 10 moves slightly toward the second side L, the first ultrasonic oscillator 120b cleans the substrate 10. Using this method, if the substrate 10 moves completely to the second side L, the edge of the substrate 10 is cleaned by the first ultrasonic oscillator 120c, located at the very end of the "<" shape.

[0077] Figure 8 FIG. 1 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a sixth embodiment of the present invention. Figure 9 FIG. 1 is a diagram for explaining a cleaning portion used in a substrate processing apparatus according to a seventh embodiment of the present invention.

[0078] Reference Figure 8 and Figure 9 A plurality of first ultrasonic oscillators 120 and a plurality of second ultrasonic oscillators 121 are provided in the first tank 110 .

[0079] The first ultrasonic oscillator 120 and the plurality of second ultrasonic oscillators 121 can remove foreign matter of different sizes. The first ultrasonic oscillator 120 can generate ultrasonic waves to remove relatively large foreign matter. The second ultrasonic oscillators 121 can generate megasonic waves to remove relatively small foreign matter.

[0080] like Figure 8 As shown, a plurality of first ultrasonic oscillators 120 are arranged in a row from the front F to the rear B. A plurality of second ultrasonic oscillators 121 are also arranged in a row from the front F to the rear B. The heat generated by the first ultrasonic oscillators 120 and the heat generated by the second ultrasonic oscillators 121 can be separated by a predetermined distance G1.

[0081] like Figure 9 As shown, in the first tank 110 , the plurality of first ultrasonic oscillators 120 and the plurality of second ultrasonic oscillators 121 may be arranged in a zigzag pattern.

[0082] Figure 10 FIG. 8 is a schematic diagram for explaining a cleaning portion used in a substrate processing apparatus according to an eighth embodiment of the present invention.

[0083] Reference Figure 10 , a substrate processing apparatus according to an eighth embodiment of the present invention includes a first cleaning section 101 and a second cleaning section 201 that are sequentially arranged.

[0084] The first groove 110 stores a cleaning liquid and has a first opening 110a formed on its upper surface. When the substrate 10 moves from the first side R to the second side L, a first sidewall 110R located on the first side R has a first height H1 lower than a second height H2 of a second sidewall 110L located on the second side L.

[0085] The first ultrasonic oscillator 120 is disposed in the first tank 110 and provides ultrasonic waves of a first frequency toward the surface of the cleaning liquid exposed through the first opening 110a. The ultrasonic waves of the first frequency form a protruding first water film 131 on the surface of the cleaning liquid.

[0086] The second tank 210 is disposed on one side of the first tank 110. The second tank 210 is disposed further rearward than the first tank 110 when viewed in the moving direction DR of the substrate 10. The second tank 210 stores cleaning liquid and has a second opening 210a formed on its upper surface.

[0087] When the substrate 10 moves from the first side R to the second side L, a third height H11 of the third sidewall 210R at the first side R among the sidewalls of the second groove 210 is lower than a fourth height H12 of the fourth sidewall 210L at the second side L.

[0088] The second ultrasonic oscillator 121 is disposed in the second tank 210 and provides ultrasonic waves of a second frequency higher than the first frequency toward the surface of the cleaning liquid exposed through the second opening 210a. The ultrasonic waves of the second frequency form a protruding second water film 231 on the surface of the cleaning liquid.

[0089] The substrate 10 wound into a roll is unwound and sequentially passes through the upper side of the first tank 110 and the upper side of the second tank 210 without being immersed in the first tank 110 and the second tank 210. One surface of the substrate 10 passes adjacent to the first opening 110a and the second opening 210a, and the one surface of the substrate 10 is cleaned by the first water film 131 and the second water film 231.

[0090] The first frequency of ultrasonic waves may be, for example, ultrasonic waves. The second frequency of ultrasonic waves may be, for example, megasonic waves. Thus, relatively large foreign matter (e.g., several μm) is removed by ultrasonic waves of the first frequency, while relatively small foreign matter (e.g., less than 1 μm) is removed by ultrasonic waves of the second frequency. Since foreign matter of various sizes can be removed by continuously configuring the first cleaning unit 101 and the second cleaning unit 201 using multiple oscillation frequencies, cleaning efficiency can be improved.

[0091] During the cleaning of the substrate, the cleaning liquid is continuously supplied through the supply port of the first tank 110 and overflows toward the first sidewall 110R. The cleaning liquid is continuously supplied through the supply port of the second tank 210 and overflows toward the third sidewall 210R.

[0092] As described above, due to the structures of the first tank 110 and the second tank 210 and the method of supplying the cleaning liquid, it is possible to prevent one surface of the cleaned substrate 10 from being contaminated again.

[0093] Figure 11 Schematic diagram for explaining a cleaning unit used in a substrate processing apparatus according to a ninth embodiment of the present invention. Figures 1 to 10 The description part is essentially the same content.

[0094] Reference Figure 11 In the substrate processing apparatus according to the ninth embodiment of the present invention, a gas supplier 190 is further included, which is disposed on the first tank 110. The substrate 10 is disposed between the first tank 110 and the gas supplier 190, with the other surface of the substrate 10 (i.e., the surface opposite to the surface cleaned by the protruding water film 13) facing the gas supplier 190.

[0095] The gas supplier 190 may supply gas to the other side of the substrate 10 to prevent contamination of the other side of the substrate 10. The gas supplier 190 may supply gas with a positive pressure.

[0096] The gas supplier 190 may have various shapes. As shown in the figure, the gas supplier 190 may be in the form of an air knife.

[0097] Figure 12 Is used to illustrate Figure 11 FIG. 1 is a perspective view of another example of a gas supplier shown in FIG.

[0098] Reference Figure 12 The gas supplier 191 includes a main body 192 configured in a cylindrical shape and a plurality of gas exhaust ports 193 on a side surface of the main body 192 , each gas exhaust port 193 extending in a longitudinal direction of the main body 192 .

[0099] Each gas outlet 193 can supply gas with positive pressure in different directions (refer to the accompanying drawings a1, a2, a3). Therefore, since gas can be supplied to various areas of the substrate, the other side of the gas can be prevented from being contaminated. In addition, when the substrate is a flexible substrate (i.e., a film wound into a roll form), a gas supplier 191 can also be formed on the area where the substrate is bent. In this case, since the gas supplier 191 can supply gas in multiple directions, the efficiency of preventing contamination can be improved.

[0100] Figure 13 is a flowchart for illustrating a substrate processing method according to various embodiments of the present invention.

[0101] Reference Figure 2 and Figure 13 First, a substrate processing apparatus is provided ( S310 ). The substrate processing apparatus includes a first tank 110 storing a cleaning liquid and having an opening 110 a formed on an upper surface thereof, and a first ultrasonic oscillator 120 disposed in the tank 110 .

[0102] Furthermore, the first ultrasonic oscillator 120 provides ultrasonic waves toward the surface of the cleaning liquid exposed through the opening 110 a , thereby forming a protruding water film 131 on the surface 130 of the cleaning liquid.

[0103] Next, the rolled substrate 10 is unwound, and one surface of the substrate 10 passes adjacent to the opening 110 a of the first tank 110 . The substrate 10 is not immersed in the first tank 110 , and the one surface of the substrate 10 is cleaned by the water film 131 .

[0104] While the embodiments of the present invention have been described above with reference to the accompanying drawings, it will be understood by those skilled in the art that the present invention can be implemented in other specific forms without changing its technical concept or essential technical features. Therefore, it should be understood that the embodiments described above are illustrative in all respects and are not intended to be limiting.

Claims

1. A substrate processing device, comprising: a first tank for storing a cleaning liquid and having a first opening formed on an upper surface thereof; as well as a first ultrasonic oscillator disposed in the first tank and providing ultrasonic waves toward the surface of the cleaning liquid exposed through the first opening, thereby forming a protruding water film on the surface of the cleaning liquid; The substrate is not immersed in the first tank, one surface of the substrate is arranged adjacent to the first opening, and the one surface of the substrate is cleaned by the water film. The substrate moves from the first side to the second side, A first height of a first sidewall of the first groove located on the first side is lower than a second height of a second sidewall of the first groove located on the second side. A supply port for supplying cleaning liquid into the first tank is provided on the second side wall. A discharge port for discharging the cleaning liquid from the first tank is provided on the first side wall.

2. The substrate processing apparatus according to claim 1, wherein: The height of the water film is greater than the difference between the first height and the second height.

3. The substrate processing apparatus according to claim 1, wherein: During the cleaning of the substrate, the cleaning liquid is continuously supplied through the supply port.

4. The substrate processing apparatus according to claim 1, wherein: The substrate is a film wound in a roll form, and the film is unwound and passes over the upper surface of the first opening of the first groove, and is cleaned by the protruding water film.

5. The substrate processing apparatus according to claim 1, wherein: The substrate moves from the first side to the second side, The substrate processing device further includes: a second tank located on a second side of the first tank and storing a cleaning liquid, and having a second opening formed on an upper surface thereof; and The second ultrasonic oscillator is disposed in the second tank and provides ultrasonic waves toward the surface of the cleaning liquid exposed through the second opening to form a protruding water film on the surface of the cleaning liquid. The first frequency of the first ultrasonic oscillator and the second frequency of the second ultrasonic oscillator are different from each other.

6. The substrate processing apparatus according to claim 5, wherein: The second frequency is greater than the first frequency.

7. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus further includes a gas supplier disposed on the first tank. The substrate is arranged between the first groove and the gas supplier, with the other surface of the substrate facing the gas supplier. The gas supplier supplies gas to the other surface of the substrate to prevent the other surface of the substrate from being contaminated.

8. The substrate processing apparatus according to claim 7, wherein: The gas supplier is formed with a main body configured in a cylindrical shape, and a plurality of gas discharge ports are formed on a side surface of the main body, each of the gas discharge ports extending in a longitudinal direction of the main body.

9. The substrate processing apparatus according to claim 1, wherein: There are multiple first ultrasonic oscillators. The plurality of first ultrasonic oscillators are arranged in a row.

10. The substrate processing apparatus according to claim 1, wherein: The substrate moves from the first side to the second side, There are multiple first ultrasonic oscillators. The plurality of first ultrasonic oscillators are arranged in a “<” shape, with the apex of the “<” shape arranged to face the second side.

11. A substrate processing apparatus, comprising: a first tank for storing a cleaning liquid and having a first opening formed on an upper surface thereof; a first ultrasonic oscillator disposed in the first tank and configured to provide ultrasonic waves of a first frequency toward the surface of the cleaning liquid exposed through the first opening, thereby forming a protruding first water film on the surface of the cleaning liquid; a second tank, disposed on one side of the first tank and storing the cleaning liquid, and having a second opening formed on an upper surface thereof; as well as A second ultrasonic oscillator is disposed in the second tank and provides ultrasonic waves of a second frequency greater than the first frequency toward the surface of the cleaning liquid exposed through the second opening, thereby forming a protruding second water film on the surface of the cleaning liquid. The substrate wound into a roll is unwound and sequentially passes through the upper side of the first tank and the upper side of the second tank without being immersed in the first tank and the second tank. One surface of the substrate passes adjacent to the first opening and the second opening, and the one surface of the substrate is cleaned by the first water film and the second water film. The first groove includes a first side wall that is not opposite to the second groove and a second side wall that is opposite to the second groove, wherein a second height of the second side wall is higher than a first height of the first side wall. A supply port for supplying cleaning liquid into the first tank is provided on the second side wall. While the substrate is being cleaned, the cleaning liquid is continuously supplied through the supply port and overflows toward the first side wall.

12. The substrate processing apparatus according to claim 11, wherein: The height of the first water film is greater than a difference between the first height and the second height.

13. The substrate processing apparatus according to claim 11, wherein: The substrate processing apparatus further includes a gas supplier disposed on the first tank. The substrate is arranged between the first groove and the gas supplier, with the other surface of the substrate facing the gas supplier. The gas supplier supplies gas to the other surface of the substrate to prevent the other surface of the substrate from being contaminated.

14. A substrate processing method, comprising: A substrate processing device is provided, comprising a tank storing a cleaning liquid and having an opening formed on an upper surface thereof, and an ultrasonic oscillator disposed in the tank; The ultrasonic oscillator provides ultrasonic waves toward the surface of the cleaning liquid exposed through the opening, thereby forming a protruding water film on the surface of the cleaning liquid; The substrate wound into a roll is unwound, and one surface of the substrate passes adjacent to the opening of the tank without immersing the substrate in the tank, and the one surface of the substrate is cleaned by the water film, and the substrate is moved from the first side to the second side. A first height of a first sidewall of the groove located on the first side is lower than a second height of a second sidewall of the groove located on the second side, A supply port for supplying cleaning liquid into the tank is provided on the second side wall. A discharge port for discharging the cleaning liquid from the tank is provided on the first side wall.

Images