Temperature calibration apparatus and method for high temperature ambient wafer level chip scale testing

Abstract

This invention discloses a temperature calibration device and method for testing temperature-pressure integrated circuits (TCBs) in high-temperature environments. The device includes a thermocouple, a fixing device, and a signal acquisition unit. The fixing device comprises a ceramic plate with a limiting boss, a first pad, and a second pad. One end of the limiting boss contacts the thermocouple housing end face of the thermocouple. The limiting boss is used to mount the TCB. During calibration, the thermocouple temperature probe of the thermocouple contacts the TCB. The TCB is connected to the second pad via the first pad, and the second pad is connected to the signal acquisition unit via a wire. This device can withstand temperatures of 600°C and above in air and can perform temperature calibration in environments of 600°C and above, accurately acquiring the temperature parameters at the pressure sensing point of the TCB under high-temperature conditions, thus achieving temperature calibration of the temperature unit and compensation for zero-pressure temperature drift of the pressure unit.

Description

Technical Field

[0001] This invention belongs to the field of sensor testing technology, specifically relating to a temperature calibration device and method for testing integrated chips under high-temperature and high-pressure environments. Background Technology

[0002] Critical components of spacecraft, aero-engines, and gas turbines are typically exposed to harsh environments with high temperatures and pressures. Real-time, in-situ, and accurate acquisition of temperature and pressure parameters in these critical components provides a basis and guarantee for the selection of surface materials, structural design, and protective measures for aerospace vehicles. This is particularly urgent for the development of next-generation aero-engines and gas turbines, where the need for temperature and pressure measurement in high-temperature regions is extremely pressing. However, existing pressure sensor products are insufficient to meet the requirements for real-time, in-situ pressure testing in environments exceeding 300°C. To address the bottleneck in the temperature resistance of pressure sensors, domestic and international researchers have adopted third-generation wide-bandgap semiconductor silicon carbide to develop high-temperature resistant pressure sensors. It has been reported that silicon carbide pressure sensors can withstand temperatures up to 800°C. However, at such high temperatures, pressure sensors experience significant temperature drift, affecting sensor accuracy. Therefore, temperature compensation is essential for high-temperature pressure sensors. Currently, various methods widely used for temperature compensation of pressure sensors, including dedicated temperature compensation chips and compensation circuits, cannot withstand temperatures above 150℃. Therefore, they cannot be integrated with pressure chips that can operate above 600℃. Accurately obtaining the temperature of the pressure chip is a prerequisite for ensuring high-precision output of the pressure sensor. Therefore, it is necessary to integrate a temperature sensing unit onto the pressure chip to obtain the chip's temperature accurately in real time. Chinese patent CN113526452A proposes a chip and its fabrication method that integrates a temperature sensing unit with a high-temperature pressure unit on-chip. However, accurately obtaining the chip's temperature during the testing and calibration of the temperature-pressure integrated chip under high-temperature conditions presents certain difficulties.

[0003] In existing pressure sensor testing and calibration, pressure and temperature calibration are typically performed at equally spaced points within the pressure and temperature ranges. However, pressure sensors generally have a temperature resistance of no more than 300℃, and the temperature environment is created using high and low temperature test chambers or ovens, resulting in low temperatures and a narrow temperature range. For high-temperature pressure and temperature integrated sensor chips with a temperature resistance exceeding 600℃, a high-temperature furnace must be used to create the high-temperature environment, which offers high temperatures and a wide temperature range. However, the temperature control accuracy of the high-temperature furnace itself is limited, leading to discrepancies between the displayed temperature and the actual temperature. Furthermore, the high-temperature furnace suffers from uneven temperature field distribution, causing a significant difference between the temperature at the pressure sensing point of the pressure-sensitive integrated chip and the temperature displayed by the furnace. These factors result in inaccurate temperature measurements by the high-temperature pressure and temperature integrated chip, making the temperature calibration and pressure accuracy compensation of the integrated temperature and pressure sensor unreliable, and ultimately hindering the effective improvement of the sensor's measurement accuracy. Summary of the Invention

[0004] This invention provides a temperature calibration device and method for testing temperature-pressure integrated chips in high-temperature environments. It can withstand temperatures of 600°C and above in air and can perform temperature calibration in high-temperature environments of 600°C and above. It can accurately obtain the temperature parameters of the pressure sensing part of the temperature-pressure integrated chip in high-temperature environments, realize the temperature calibration of the temperature unit and the compensation for the zero-pressure temperature drift of the pressure unit.

[0005] To achieve the above objectives, the present invention provides a temperature calibration device for testing thermo-pressure integrated chips in high-temperature environments, comprising a thermocouple, a fixing device, and a signal acquisition unit; the fixing device includes a ceramic plate, on which are provided a limiting boss for mounting the thermo-pressure integrated chip, a first pad, and a second pad, one end of the limiting boss contacting the thermocouple housing end face; during calibration, the thermocouple temperature probe of the thermocouple contacts the thermo-pressure integrated chip; the thermo-pressure integrated chip is connected to the second pad through the first pad, and the second pad is connected to the signal acquisition unit through a wire.

[0006] Furthermore, one end of the ceramic plate is clamped between the first bolt plate and the second bolt plate, and the first bolt plate, the second bolt plate and the ceramic plate are connected by fasteners. The thermocouple passes through the center hole of the first bolt plate and extends above the limiting boss. The other end of the ceramic plate is clamped between the fourth bolt plate and the third bolt plate, and the ceramic plate, the fourth bolt plate and the third bolt plate are connected by fasteners.

[0007] Furthermore, the first bolt plate, the second bolt plate, the third bolt plate, the fourth bolt plate, and the fasteners are all ceramic products.

[0008] Furthermore, the center axis of the hole in the first bolt plate coincides with the center line of the limiting boss.

[0009] Furthermore, a chip fixing groove is provided on the limiting boss.

[0010] Furthermore, let s1 be the distance between the end face of the limiting boss that contacts the end face of the thermocouple housing and the center of the chip fixing groove, and s2 be the distance between the center of the thermocouple temperature probe and the end face of the thermocouple housing, where |s1-s2|≤1.25mm.

[0011] Furthermore, a chip lifting groove is provided on the side of the chip fixing slot.

[0012] Furthermore, the limiting bosses set on the ceramic plate can be designed with a specific array number and array pattern as needed.

[0013] Furthermore, during calibration, the thermoelectric integrated chip is connected to the first pad via metal leads, and the first pad is connected to the second pad via a circuit. The metal leads are fixed between the pads of the thermoelectric integrated chip and the first pad using high-temperature conductive silver paste, and the circuit is fixed between the first pad and the second pad using high-temperature conductive silver paste.

[0014] The temperature calibration method for temperature-pressure integrated chips based on the above-mentioned temperature calibration device includes the following steps:

[0015] Step 1: After connecting the thermocouple and the first end of the wire, install it on the fixing device and place it in the high-temperature furnace. Expose the thermocouple and the end of the wire to the room temperature environment and connect it to the signal acquisition device.

[0016] Step 2: Keep the thermo-pressure integrated chip in a non-pressurized state, take a series of temperature points from room temperature to 600°C, measure the temperature signal of the thermo-pressure integrated chip at each temperature point using thermocouples and transmit it to the signal acquisition device; at the same time, at each temperature point, the voltage signal output by the pressure unit and the potential signal output by the temperature unit of the thermo-pressure integrated chip are recorded by the signal acquisition device through wires.

[0017] Step 3: Use the temperature signal obtained by the thermocouple as the standard temperature and the output voltage signal of the temperature-pressure integrated chip pressure unit as the zero pressure drift. Use the standard temperature as the independent variable and the output voltage signal of the temperature-pressure integrated chip pressure unit as the dependent variable. Obtain the curve of voltage change of temperature of the temperature-pressure integrated chip pressure unit through data fitting.

[0018] The temperature signal obtained by the thermocouple is used as the standard temperature, and the potential signal output by the temperature unit of the temperature-pressure integrated chip is stored as the dependent variable. The host computer uses the standard temperature as the independent variable and the potential signal output by the temperature unit of the temperature-pressure integrated chip as the dependent variable. The curve of the potential of the temperature unit of the temperature-pressure integrated chip as a function of temperature is obtained by data fitting.

[0019] Compared with the prior art, the present invention has at least the following beneficial technical effects:

[0020] This invention employs an external temperature sensor, placing the temperature sensor probe on the surface of the thermo-pressure integrated chip and making contact with the chip. This solves the problems of inaccurate temperature control in high-temperature furnaces and uneven temperature field distribution within the furnace, which leads to inaccurate temperature measurement by the thermo-pressure integrated chip. By accurately measuring the temperature at the chip using a thermocouple, the measurement accuracy of the thermo-pressure integrated sensor is improved.

[0021] Furthermore, a limiting boss is set on the high-temperature resistant ceramic plate to restrict the longitudinal displacement of the thermocouple. The center line of the hole of the first bolt plate coincides with the center line of the limiting boss, which is used to limit the position of the thermocouple relative to the horizontal plane of the limiting boss. The height of the upper surface of the thermo-pressure integrated chip relative to the upper surface of the high-temperature resistant ceramic plate is slightly less than the distance of the center hole of the first bolt plate relative to the upper surface of the high-temperature resistant ceramic plate, so that the thermocouple temperature probe can be accurately placed on the surface of the thermo-pressure integrated chip, making the temperature measured by the temperature sensor closest to the true value of the chip temperature, thus improving the accuracy of calibration.

[0022] Furthermore, the device of the present invention uses all-ceramic materials, high-temperature resistant circuits, high-temperature resistant pads, high-temperature resistant metal leads, and high-temperature resistant wires. High-temperature resistant wire silver paste is used to bond the high-temperature resistant metal leads and high-temperature resistant wires to the pads on the high-temperature resistant ceramic plate to achieve electrical connection. It can withstand temperatures above 600°C in air and can realize temperature measurement and calibration of temperature-pressure integrated chips under high-temperature extreme environments.

[0023] Furthermore, a chip lifting slot is provided on the side of the chip fixing slot. The chip lifting slot facilitates the removal of the temperature-pressure integrated chip after testing and calibration. This method of fixing the chip to the limiting boss through ingenious structural design improves the reusability of the chip and ceramic plate and saves costs compared to the method of using high-temperature adhesive to bond the chip to the limiting boss.

[0024] Furthermore, the number and arrangement of the limiting bosses can be expanded on the ceramic plate as needed, allowing for simultaneous testing and calibration of multiple temperature and pressure integrated chips, saving time and costs, and making testing and calibration more efficient.

[0025] The method described in this invention uses the real-time temperature measured by an external temperature sensor as the input signal and the zero-pressure output voltage of the pressure-sensitive unit of the temperature-pressure integrated chip as the output signal to obtain the curve of the output voltage changing with temperature under zero-pressure input conditions. The zero-pressure drift data caused by temperature to the pressure unit is stored in the host computer to realize zero-pressure temperature compensation of the pressure unit. At the same time, the potential output of the temperature unit of the temperature-pressure integrated chip and the standard temperature output measured by the external temperature sensor are stored in the host computer, and the temperature signal of the temperature unit is calibrated in real time by software. In this way, the pressure measurement accuracy and temperature measurement accuracy of the temperature-pressure integrated chip are improved. Attached Figure Description

[0026] Figure 1 This is a half-sectional structural schematic diagram of the device of the present invention;

[0027] Figure 2 yes Figure 1 A magnified view of a section at point B in the middle;

[0028] Figure 3 yes Figure 1 A magnified view of a section at point C;

[0029] Figure 4 This is a top view of the device of the present invention after the thermocouples on both sides have been removed;

[0030] Figure 5 This is a schematic diagram of the installation of the device of the present invention when testing and calibrating three temperature and pressure integrated chips;

[0031] Figure 6 This is a schematic diagram of the installation position of the device during testing and calibration of the present invention;

[0032] Figure 7 This is a schematic diagram of the test, calibration, and assembly of the device of the present invention.

[0033] Wherein: 1-Thermocouple, 101-Thermocouple temperature probe, 102-Thermocouple housing, 2-Bolt, 41-First bolt plate, 42-Second bolt plate, 43-Third bolt plate, 44-Fourth bolt plate, 5-Nut, 6-Ceramic plate, 601-Limiting boss, 602-Chip fixing slot, 603-Chip lifting slot, 604-First pad (small), 605-Second pad (large), 606-Circuit, 607-Metal lead, 7-Temperature and pressure integrated chip, 8-Wire, 9-Insulation cotton, 10-Furnace door, 11-High temperature furnace, 12-Regulated power supply, 13-Signal acquisition device, 14-Host computer. Detailed Implementation

[0034] To make the objectives and technical solutions of this invention clearer and easier to understand, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. The specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention.

[0035] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0036] Following the above technical solutions, such as Figures 1 to 7 As shown in the figure, this embodiment provides a temperature calibration device and method for testing integrated circuit chips in high-temperature environments.

[0037] The temperature calibration device of the present invention includes a thermocouple 1, a fixing device, a regulated power supply 12, a signal acquisition device 13, and a host computer 14. The fixing device is used to fix the temperature and pressure integrated chip 7. The regulated power supply 12 is connected to the temperature and pressure integrated chip 7 through wires 8. The input terminal of the signal acquisition device 13 is connected to the pressure unit output terminal and the temperature unit output terminal of the temperature and pressure integrated chip 7. The output terminal of the signal acquisition device 13 is connected to the input terminal of the host computer 14.

[0038] Thermocouple 1 includes a thermocouple temperature probe 101 and a thermocouple housing 102 that are fixedly connected.

[0039] Reference Figure 1 The fixing device includes a ceramic plate 6, bolts 2, a first bolt plate 41, a bolt plate, and a nut 5. The ceramic plate 6 is designed with a limiting boss 601, a first solder pad 604, a second solder pad 605, and wiring 606. Bolts 2, the first bolt plate 41, the bolt plate, the nut 5, and the ceramic plate 6 are all made of ceramic material. The entire fixing device can withstand temperatures of 600°C and above. The size of the first solder pad is smaller than the size of the second solder pad. Both the first solder pad 604 and the second solder pad 605 are gold solder pads. The ceramic plate 6 can withstand temperatures of at least 650°C.

[0040] Reference Figure 2 The ceramic plate 6 is fixed by a pair of front bolt plates and a pair of rear bolt plates using bolts 2 and nuts 5. The pair of front bolt plates includes a fourth bolt plate 44 and a third bolt plate 43 arranged vertically, and the pair of rear bolt plates includes a first bolt plate 41 and a second bolt plate 42 arranged vertically. The front end of the ceramic plate 6 is clamped between the fourth bolt plate 44 and the third bolt plate 43, and the threaded portions of the two bolts 2 pass through the fourth bolt plate 44 and the third bolt plate 43 and are threadedly connected to the nuts 5. The rear end of the ceramic plate 6 is clamped between the first bolt plate 41 and the second bolt plate 42, and the threaded portions of the other two bolts 2 pass through the first bolt plate 41 and the first bolt plate 42 and are threadedly connected to the nuts 5. During calibration, the thermocouple 1 passes through the central through hole in the first bolt plate 41, and the lower end of the thermocouple temperature probe 101 contacts the chip 7.

[0041] Reference Figure 3 and Figure 4The first bolt plate 41 is designed with a central through hole. Viewed horizontally, the center line of the hole in the first bolt plate 41 coincides with the center line of the limiting boss 601, thus limiting the position of the thermocouple 1 relative to the limiting boss 601 on the horizontal plane. The thermocouple 1 extends through the central hole of the first bolt plate 41 into the limiting boss 601. The rear end face of the limiting boss 601 blocks the front end face of the thermocouple housing 102 longitudinally, thereby limiting the longitudinal displacement of the thermocouple temperature probe 101 and ensuring that the thermocouple temperature probe 101 accurately lands on the temperature and pressure integrated chip 7 in the longitudinal direction. From the perspective of height, a limiting boss 601 with a height of h1 is provided on the ceramic plate 6. A chip fixing groove 602 with a depth of h2 is opened on the limiting boss 601. The thermo-pressure integrated chip 7 is installed in the chip fixing groove 602. The thickness of the thermo-pressure integrated chip 7 is h3. Therefore, the height of the upper surface of the thermo-pressure integrated chip 7 relative to the upper surface of the ceramic plate 6 is h1+h3-h2. The distance of the axis of the center hole of the first bolt plate 41 in the vertical direction relative to the upper surface of the ceramic plate 6 is L. The radius of the thermocouple temperature probe 101 is r. In order for the thermocouple temperature probe 101 to fall on the surface of the thermo-pressure integrated chip 7, it is only necessary to make [L-(h1+h3-h2)-r]<0.01mm.

[0042] The limiting boss 601 longitudinally blocks the end face of the thermocouple housing 102, thereby restricting the longitudinal displacement of the thermocouple temperature probe 101. Let s1 be the distance between the end face of the limiting boss 601 in contact with the end face of the thermocouple housing 102 and the center of the chip fixing slot 602, and s2 be the distance the center of the thermocouple temperature probe 101 extends beyond the end face of the thermocouple housing 102. Ensure that s1-s2≤1.25mm, so that the thermocouple temperature probe 101 falls precisely on the upper surface of the temperature-pressure integrated chip 7. The limiting boss 601 is designed with a chip fixing slot 602, which is square and its size matches the temperature-pressure integrated chip 7. A chip lifting slot 603 is provided on the side of the chip fixing slot 602 to facilitate the removal of the temperature-pressure integrated chip 7 after testing and calibration. This method of fixing the chip to the limiting boss 601 through ingenious structural design improves the reusability of the chip and ceramic plate 6 and saves costs compared to using high-temperature adhesive to bond the chip to the limiting boss 601.

[0043] Reference Figure 4Six first pads 604 are arranged around the limiting boss 601 on the ceramic plate 6. After the temperature-pressure integrated chip 7 is assembled in the chip fixing groove 602 of the limiting boss 601, a metal lead 607 capable of withstanding temperatures up to 800°C is fixed between the pads of the temperature-pressure integrated chip 7 and the first pads 604 using high-temperature conductive silver paste. One end of the metal lead 607 is connected to the pad of the temperature-pressure integrated chip 7, and the other end is connected to the first pad 604, realizing the electrical connection between the temperature-pressure integrated chip 7 and the ceramic plate 6. The six first pads 604 include two temperature unit pads and four pressure unit pads. The two temperature unit pads are respectively connected to the pads of the two temperature units of the temperature-pressure integrated chip 7, and the four pressure unit pads are respectively connected to the four pads of the pressure units of the temperature-pressure integrated chip 7. The second pad 605 is used to connect the external wire 8. The wire 8 is fixed on the second pad 605 using high-temperature conductive silver paste. The second pad 605 is connected to the first pad 604 through the line 606. The six first pads 604 correspond one-to-one with the six second pads 605. In this way, the temperature and pressure signals of the temperature and pressure integrated chip 7 are output.

[0044] Reference Figure 5 When three thermoelectric integrated circuit (TIC) chips 7 need to be tested simultaneously, the ceramic plate 6 of this device is designed with three limiting bosses 601 and 18 surrounding first pads 604, 18 corresponding lines, and 18 second pads 605, with the three TIC chips 7 arranged side by side. To accurately obtain the temperature of each TIC chip 7, a thermocouple 1 is installed on each TIC chip 7. This array testing method can save testing and calibration time and improve testing and calibration efficiency. Based on this device, the number of arrays and array configurations can be expanded as needed to achieve even more efficient testing and calibration.

[0045] The device of this invention uses all ceramic materials, including circuit 606, gold pads that can withstand temperatures up to 600°C, metal leads 607, and wires 8. High-temperature resistant silver paste is used to bond the metal leads 607 and circuit 606 to the pads on the ceramic plate 6 to achieve electrical connection. The circuit 606, metal leads 607, and wires 8 are all made of materials that can withstand high temperatures up to 650°C, enabling stable operation in high-temperature environments of 600°C and above in the air inside a high-temperature furnace.

[0046] The working principle of the device of the present invention is as follows: given an excitation voltage signal, it passes through the second pad 605, line 606, first pad 604, metal lead 607 and the pad on the temperature and pressure integrated chip 7 in sequence. The temperature and pressure integrated chip 7 obtains the excitation signal, and the output signal of the temperature and pressure integrated chip 7 is output through the corresponding metal lead 607, first pad 604, line 606 and second pad 605.

[0047] The device of this invention is used for temperature calibration of integrated circuit chips in high-temperature environment temperature and pressure testing. The device is used in a high-temperature furnace 11. The end of the thermocouple 1 and the tail of the wire 8 are led out through the hole opened on the furnace door 10 and exposed to the room temperature environment. The gap of the furnace door 10 is plugged with heat insulation cotton 9 to maintain the stability of the internal temperature of the high-temperature furnace 11.

[0048] Reference Figure 6 and Figure 7 A temperature calibration method for testing integrated circuit chips in high-temperature environments includes the following steps:

[0049] Step 1: Install the thermocouple 7 on the fixing device and place it in the high temperature furnace 11. Lead out the thermocouple 1 and the wire 8 through the hole opened on the furnace door 10 to expose them to the room temperature environment. Use the insulation cotton 9 to plug the gap of the furnace door 10. The regulated power supply 12 provides a constant standard voltage of 5V or 10V to the thermocouple 7 through the wire 8.

[0050] Step 2: Keep the thermo-pressure integrated chip 7 in a non-pressurized state. Within the range of room temperature to 600℃, control the heating rate to 5℃ / min, with a step size of 50℃, and take a series of temperature points. Hold each temperature point for 15 minutes. At the same time, accurately measure the temperature signal on the thermo-pressure integrated chip 7 at each temperature point through thermocouple 1, and transmit the temperature signal to the signal acquisition unit 13 for storage. Meanwhile, at each temperature point, the voltage signal output by the pressure unit and the potential signal output by the temperature unit of the thermo-pressure integrated chip 7 are collected by the signal acquisition unit 13 through the wire 8.

[0051] Step 3: The signal acquisition device 13 transmits the temperature signal on the temperature-pressure integrated chip 7, the voltage signal output by the pressure unit of the temperature-pressure integrated chip 7 at each temperature point, and the potential signal output by the temperature unit to the host computer 14.

[0052] Step 4: The host computer 14 uses the temperature signal obtained by thermocouple 1 as the standard temperature and the voltage signal output by the pressure unit of the temperature-pressure integrated chip 7 as the zero pressure drift. The host computer 14 uses the standard temperature as the independent variable and the voltage signal output by the pressure unit of the temperature-pressure integrated chip 7 as the dependent variable. Through data fitting, the law of voltage change of the pressure unit of the temperature-pressure integrated chip 7 with temperature is obtained, that is, the temperature-voltage change curve.

[0053] The host computer 14 uses the temperature signal obtained by thermocouple 1 as the standard temperature and the output potential signal of the temperature unit of the temperature-pressure integrated chip 7 as the dependent variable. The host computer 14 uses the standard temperature as the independent variable on the horizontal axis and the output potential signal of the temperature unit of the temperature-pressure integrated chip 7 as the dependent variable. Through data fitting, the curve of the potential of the temperature unit of the temperature-pressure integrated chip 7 changing with temperature is obtained, which is the temperature-potential calibration result of the temperature unit of the temperature-pressure integrated chip 7.

[0054] Based on step 4, the temperature-potential calibration results of the temperature unit of the temperature-pressure integrated chip 7 were obtained. Based on the high-precision external thermocouple 1 with an accuracy of up to 0.035, the temperature measurement accuracy of this temperature unit can be well guaranteed.

[0055] Step 5: Based on step 4, store the temperature-voltage change curve in the host computer.

[0056] In subsequent pressure tests at various temperature points on the packaged temperature and pressure integrated sensor, the output voltage signal of the pressure unit of the temperature and pressure integrated chip 7 under different pressures will be obtained, namely the pressure-voltage signal. The pressure-voltage signal at each temperature point is subtracted from the corresponding temperature-voltage change curve to eliminate the influence of temperature on the pressure unit, thereby achieving accurate temperature compensation of the temperature and pressure integrated chip 7.

[0057] The temperature calibration method described above for testing thermo-pressure integrated chips in high-temperature environments can achieve zero-pressure temperature compensation for the pressure unit and real-time calibration of the temperature signal of the temperature unit, thereby improving the pressure measurement accuracy and temperature measurement accuracy of the thermo-pressure integrated chip.

[0058] The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A temperature calibration device for testing integrated circuit chips in high-temperature environments, characterized in that, Includes thermocouples (1), fixing devices and signal acquisition devices (13); The fixing device includes a ceramic plate (6), on which a limiting boss (601), a first pad (604), and a second pad (605) for mounting a thermo-pressure integrated chip (7) are provided. One end of the limiting boss (601) is in contact with the thermocouple housing end face (102) of the thermocouple (1). During calibration, the thermocouple temperature probe (101) of the thermocouple (1) is in contact with the thermo-pressure integrated chip (7). The temperature and pressure integrated chip (7) is connected to the second pad (605) via the first pad (604), and the second pad (605) is connected to the signal acquisition device (13) via the wire (8).

2. The temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 1, characterized in that, One end of the ceramic plate (6) is clamped between the first bolt plate (41) and the second bolt plate (42). The first bolt plate (41), the second bolt plate (42) and the ceramic plate (6) are connected by fasteners. The thermocouple (1) passes through the center hole of the first bolt plate (41) and extends above the limiting boss (601). The other end of the ceramic plate (6) is clamped between the fourth bolt plate (44) and the third bolt plate (43). The ceramic plate (6), the fourth bolt plate (44) and the third bolt plate (43) are connected by fasteners.

3. The temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 2, characterized in that, The first bolt plate (41), the second bolt plate (42), the third bolt plate (43), the fourth bolt plate (44), and the fasteners are all ceramic products.

4. A temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 2, characterized in that, The center axis of the hole in the first bolt plate (41) coincides with the center line of the limiting boss (601).

5. A temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 2, characterized in that, The limiting boss (601) is provided with a chip fixing groove (602).

6. A temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 5, characterized in that, Let s1 be the distance between the end face of the limiting boss (601) that contacts the end face of the thermocouple housing (102) and the center of the chip fixing groove (602), and let s2 be the distance between the center of the thermocouple temperature probe (101) and the end face of the thermocouple housing (102). .

7. A temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 5, characterized in that, The chip fixing slot (602) has a chip lifting slot (603) on its side.

8. A temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 1, characterized in that, The limiting bosses (601) provided on the ceramic plate (6) are designed with array number and array mode as needed.

9. A temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 1, characterized in that, During calibration, the temperature and pressure integrated chip (7) is connected to the first pad (604) via a metal lead (607), and the first pad (604) is connected to the second pad (605) via a line (606). The metal lead (607) is fixed between the pad of the temperature and pressure integrated chip (7) and the first pad (604) with high-temperature conductive silver paste, and the line (606) is fixed between the first pad (604) and the second pad (605) with high-temperature conductive silver paste.

10. A temperature calibration method for a temperature-pressure integrated chip based on the temperature calibration device of claim 1, characterized in that, Includes the following steps: Step 1: Connect the thermocouple (7) to the first end of the wire (8) and install it on the fixing device, and place it in the high temperature furnace (11). Expose the thermocouple (1) and the end of the wire (8) to the room temperature environment and connect them to the signal acquisition device (13). Step 2: Keep the temperature-pressure integrated chip (7) in a state of no pressure, take a series of temperature points from room temperature to 600°C, measure the temperature signal of the temperature-pressure integrated chip (7) at each temperature point through thermocouple (1) and transmit it to the signal acquisition device (13); at the same time, at each temperature point, the voltage signal output by the pressure unit and the potential signal output by the temperature unit of the temperature-pressure integrated chip (7) are recorded by the signal acquisition device (13) through the wire (8); Step 3: Use the temperature signal obtained by the thermocouple (1) as the standard temperature, and store the voltage signal output by the pressure unit of the temperature-pressure integrated chip (7) as the zero pressure drift. Use the standard temperature as the independent variable and the voltage signal output by the pressure unit of the temperature-pressure integrated chip (7) as the dependent variable. Obtain the curve of the voltage of the pressure unit of the temperature-pressure integrated chip (7) as a function of temperature through data fitting. The temperature signal obtained by the thermocouple (1) is used as the standard temperature, and the potential signal output by the temperature unit of the temperature-pressure integrated chip (7) is stored as the dependent variable. The host computer uses the standard temperature as the independent variable and the potential signal output by the temperature unit of the temperature-pressure integrated chip (7) as the dependent variable. The curve of the potential of the temperature unit of the temperature-pressure integrated chip (7) changes with temperature is obtained by data fitting.

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