A spring probe module with pressure display

Abstract

The present invention relates to a spring probe module with pressure display. The pressure sensor of the pressure display module is arranged on the lower surface of the pressure module, and the pressure sensor is electrically connected to the pressure display screen through a pressure sensor wire; a spring probe through hole corresponding to the pressure sensor is arranged in the pressure module corresponding frame on the upper surface of the spring probe module; a sample placement frame is arranged on the sample base, and probe placement frames are arranged at the corners of the sample placement frame. The probe placement frames correspond to the spring probe through holes. The top end of the spring probe contacts the pressure sensor, and the bottom end of the spring probe passes through the spring probe through hole and corresponds to the probe placement frame. The pressure module can apply pressure to the spring probes on the spring probe module, and at the same time, the pressure display module can real-time feedback the pressure applied by the spring probes to the graphene electrodes of the low and medium doped semiconductor material samples, so as to realize non-destructive detection of the low and medium doped semiconductor material samples by using the Van der Pauw method with the present invention.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor electrical property testing devices, and particularly to a spring probe module with pressure display, aiming at testing the electrical properties of low and medium doped semiconductor materials. Background Art

[0002] Due to the fact that low and medium doped semiconductor materials have lower effective mass carriers and their mobility is several orders of magnitude higher than that of highly doped semiconductor materials (most current devices use highly doped semiconductor materials), it is found that when using them as devices, it is necessary to form metal-semiconductor contacts with metals. Due to the low electron affinity of low and medium doped semiconductor materials and the mismatch between the work function of the gold element, Schottky junctions or Fermi pinning effects will be caused, which are not conducive to the effective functioning of the device.

[0003] The existing technologies for testing the electrical properties of low and medium doped semiconductor materials generally use methods such as sputtering metals, welding electrodes, and conductive silver glue for connection. The disadvantage of using metal sputtering is that it may not necessarily form an ohmic contact, and the heating still can be regarded as a kind of damage to the material itself. Conventional welding electrodes and conductive silver glue cannot achieve good ohmic contact and cannot effectively connect the metal and the semiconductor. For these existing connection methods, the size, thickness, and uniformity of the electrodes cannot be guaranteed, and most of them damage the sample itself and affect its test value, resulting in unsatisfactory test results.

[0004] Using the Van der Pauw method to detect the electrical properties of semiconductor materials is a very common method, but it is very difficult when it comes to low and medium doped semiconductor materials. The reason is that it is difficult to form an ohmic contact without damaging the original properties of the material. When using the Van der Pauw method to test the electrical properties of semiconductor materials, the accuracy of the test results is closely related to the test electrodes. To accurately and stably measure the electrical properties of low and medium doped semiconductor materials, the size, thickness, and uniformity of the electrodes are very important. Even though there are instruments that use probes to connect the sample and the instrument now, the pressure of the probe pressing on the sample cannot be adjusted or the adjustable range is small, and it is impossible to accurately control the pressure.

[0005] Therefore, it is necessary to provide a spring probe module with pressure display. Using a graphene electrode and a spring probe module that can control the pressure can well ensure the connection effect, and at the same time, the visualization of the pressure and the control of the pressure magnitude can be achieved. Summary of the Invention

[0006] In view of this, the purpose of the present invention is to provide a spring probe module with pressure display, which can apply pressure to the spring probe and real-time feedback the pressure magnitude, so as to achieve the purpose of detecting the electrical properties of low and medium doped semiconductor materials by using the Van der Pauw method.

[0007] To solve the above technical problems, the present invention adopts the following technical solutions:

[0008] A spring probe module with pressure display, comprising a pressure module, a pressure display module, a spring probe module, a sample base and a spring probe. The pressure display module includes a pressure sensor, a pressure sensor wire and a pressure display screen. The pressure sensor is arranged on the lower surface of the pressure module, and the pressure sensor is electrically connected to the pressure display screen through the pressure sensor wire. A pressure module corresponding frame corresponding to the pressure module is arranged on the upper surface of the spring probe module, and a spring probe through hole corresponding to the pressure sensor is arranged in the pressure module corresponding frame. A sample placement frame is arranged on the sample base, and probe placement frames are arranged at the corners of the sample placement frame. The probe placement frames correspond to the spring probe through holes. The top end of the spring probe contacts the pressure sensor, and the bottom end of the spring probe passes through the spring probe through hole and corresponds to the probe placement frame. The pressure module can apply pressure to the spring probe, and at the same time, the pressure sensor can feedback the pressure at the top end of the spring probe in real time.

[0009] Preferably, a low and medium doped semiconductor material sample is placed in the sample placement frame, and graphene electrodes are arranged at the corners of the low and medium doped semiconductor material sample. The bottom end of the spring probe makes pressure contact with the center of the graphene electrode. The graphene electrode can effectively relieve the Fermi pinning effect through the action of modulating the work function and can form an ohmic contact. Connecting with other components in the form of a spring probe with pressure can achieve a good connection effect. On the one hand, using the graphene electrode can effectively reduce the barrier height between the metal probe and the low and medium doped semiconductor. On the other hand, using a spring probe with controllable pressure can effectively connect the metal probe with the low and medium doped semiconductor, where the graphene electrode serves as a medium connecting the low and medium doped semiconductor and the metal probe.

[0010] Preferably, the spring probe includes a probe shaft, a probe sleeve, a probe spring, and a probe tip cap coaxially arranged. The probe sleeve includes a sleeve cavity and a sleeve limiting portion. The sleeve limiting portion is arranged at the bottom end of the sleeve cavity, and the probe spring is sleeved in the sleeve cavity. The probe shaft includes a shaft body, a shaft clamping portion, and a shaft end. The shaft clamping portion is arranged on the upper part of the shaft body. The upper part of the shaft body is sleeved in the sleeve cavity and the shaft clamping portion is clamped above the sleeve limiting portion. The shaft end is arranged at the bottom end of the shaft body and contacts the center of the graphene electrode in the sample placement frame. The probe tip cap is arranged at the top end of the sleeve cavity. The top end of the probe tip cap contacts the pressure sensor. One end of the probe spring abuts against the probe tip cap, and the other end of the probe spring abuts against the top plane of the probe shaft. The shaft end of the spring probe presses on the graphene electrode, and the Van der Pauw method can be used for non-destructive detection of low and medium doped semiconductor material samples. The size of the shaft end of the spring probe can be adjusted according to the measurement accuracy of the low and medium doped semiconductor material samples.

[0011] Preferably, the pressure module is provided with spring probe module bolt connection holes, and the spring probe module is provided with pressure module bolt connection holes. The spring probe module bolt connection holes and the pressure module bolt connection holes are fixedly connected by screwing with an upper connecting bolt.

[0012] Preferably, the spring probe module is provided with sample base bolt connection holes, and the sample base is provided with spring probe module bolt connection holes. The sample base bolt connection holes and the spring probe module bolt connection holes are fixedly connected by screwing with a lower connecting bolt.

[0013] Preferably, heat conduction holes are provided in the sample placement frame. The function of the heat conduction holes is to better dissipate the heat generated by the low and medium doped semiconductor material samples.

[0014] Preferably, four pressure sensors are provided on the pressure module, and two pressure display screens are provided on the pressure display module. The pressure display screens are electrically connected to the pressure sensors on the left and right sides of the pressure module through pressure sensor wires. The pressure module and the spring probe module can be connected together by the upper connecting bolt. The pressure of the spring probe can be displayed in real time through the pressure sensors and the pressure display screens. The pressure applied to the spring probe can be controlled by controlling the upper connecting bolt, and the magnitude of the pressure can be fed back in real time through the pressure sensors and the pressure display screens.

[0015] Preferably, the number of the spring probes is four, and the top ends of the top covers of the probes are respectively in contact with four pressure sensors. The spring probes can be replaced according to test requirements. The four pressure sensors can respectively display the pressures of the four spring probes, that is, ensure that the pressures applied by the four spring probes to the graphene electrodes of the low and medium doped semiconductor material samples are consistent.

[0016] Preferably, the low and medium doped semiconductor material sample is square, the graphene electrodes are arranged at the four corners of the low and medium doped semiconductor material sample and are square in shape, and the number of graphene layers of the graphene electrodes is not more than ten layers. The size of the square graphene electrode should be as small as possible, but it depends on the size of the low and medium doped semiconductor material sample. Ensure that the end of the needle shaft of the spring probe should make good contact with the middle range of the graphene transferred to the semiconductor.

[0017] Using a spring probe module with pressure display of the present invention is applicable to the test of the electrical properties of low and medium doped semiconductor materials, refining the conditions for testing low and medium doped semiconductors using the Van der Pauw method. In the actual work of testing using the Van der Pauw method, it is difficult to test low and medium doped semiconductors. The method of combining graphene electrodes with spring probes can effectively solve this problem. It changes the current situation of damage to low and medium doped semiconductor materials in most existing technologies and cannot be reused. The combination of spring probes and graphene electrodes can play a role in reducing the contact barrier, realizing accurate testing and can be tested on different Hall effect (Van der Pauw method) instruments to determine the accurate value by comparing the electrical properties of materials. At the same time, it reduces the possibility of affecting the stability of the measurement results due to different usage methods when using the measuring device. Using a unified standard to exclude irrelevant factors from the results has greatly improved.

[0018] The beneficial effects of the present invention are as follows:

[0019] Due to the adoption of the above technical solutions, the present invention can apply pressure to the spring probes on the spring probe module by using the pressure module, and at the same time, the pressure display module can real-time feedback the pressure applied by the spring probes to the graphene electrodes of the low and medium doped semiconductor material samples. The graphene electrodes can effectively relieve the Fermi pinning effect through the action of modulating the work function and can form an ohmic contact. Connecting with other components in the form of spring probes with pressure can achieve a good connection effect, realizing non-destructive detection of low and medium doped semiconductor material samples using the Van der Pauw method with the present invention. A spring probe module with pressure display of the present invention has a simple structure, the spring probes can be replaced, and the use operation is simple and the process is concise.

[0020] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and be implemented in accordance with the content of the specification, and at the same time to make the above and other purposes, technical features and advantages of the present invention more understandable, one or more preferred embodiments are listed below and described in detail with reference to the accompanying drawings as follows. Description of the Drawings

[0021] One or more embodiments are exemplarily illustrated by the pictures in the corresponding accompanying drawings. These exemplary illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings represent similar elements. Unless otherwise stated, the figures in the drawings do not constitute a scale limitation.

[0022] Figure 1 Shows the overall structural schematic diagram of a spring probe module with pressure display according to the present invention.

[0023] Figure 2 Shows the structural schematic diagram of the pressure module of a spring probe module with pressure display according to the present invention.

[0024] Figure 3 Shows the structural schematic diagram of the pressure spring probe module of a spring probe module with pressure display according to the present invention.

[0025] Figure 4 Shows the structural schematic diagram of the sample base of a spring probe module with pressure display according to the present invention.

[0026] Figure 5 Shows the structural schematic diagram of a low-medium doped semiconductor material sample of a spring probe module with pressure display according to the present invention.

[0027] Figure 6 Shows the structural schematic diagram of the spring probe of a spring probe module with pressure display according to the present invention.

[0028] Main Description of the Reference Numerals

[0029] 1 - Pressure module, 101 - Spring probe module bolt connection hole, 2 - Pressure display module, 201 - Pressure sensor, 202 - Pressure sensor wire, 203 - Pressure display screen, 3 - Spring probe module, 301 - Pressure module corresponding frame, 302 - Spring probe through hole, 303 - Pressure module bolt connection hole, 304 - Sample base bolt connection hole, 4 - Sample base, 401 - Sample placement frame, 402 - Probe placement frame, 403 - Heat conduction hole, 404 - Spring probe module bolt connection hole, 5 - Low and medium doped semiconductor material sample, 501 - Graphene electrode, 6 - Spring probe, 601 - Probe tip cap, 602 - Probe spring, 603 - Probe sleeve, 604 - Probe shaft, 7 - Upper connection bolt, 8 - Lower connection bolt. Detailed implementation manners

[0030] The following will describe in detail the specific implementation manners of the present invention in conjunction with the accompanying drawings. It should be understood that the protection scope of the present invention is not limited by the specific implementation manners.

[0031] Unless otherwise clearly stated, in the whole specification and claims, the term "comprise" or its variations such as "comprises" or "including" etc. will be understood to include the stated elements or components, without excluding other elements or other components.

[0032] In this article, for the convenience of description, spatial relative terms such as "below", "beneath", "down", "above", "upper", "on" etc. can be used to describe the relationship between one element or feature and another element or feature in the accompanying drawings. It should be understood that the spatial relative terms are intended to cover different directions of the object in use or operation in addition to the directions depicted in the figures. For example, if the object in the figure is flipped, the element described as "below" or "beneath" other elements or features will be oriented "above" the element or feature. Therefore, the exemplary term "below" can include both the lower and upper directions. The object can also have other orientations (rotated 90 degrees or other orientations) and the corresponding explanations should be made for the spatial relative terms used herein.

[0033] As Figures 1 - 6 shown, a spring probe module with pressure display includes a pressure module 1, a pressure display module 2, a spring probe module 3, a sample base 4 and a spring probe 6.

[0034] The pressure module 1 is provided with a spring probe module bolt connection hole 101. The spring probe module 3 is provided with a pressure module bolt connection hole 303. The spring probe module bolt connection hole 101 and the pressure module bolt connection hole 303 are fixedly connected by screwing with an upper connection bolt 7.

[0035] The spring probe module 3 is provided with a sample base bolt connection hole 304, and the sample base 4 is provided with a spring probe module bolt connection hole 404. The sample base bolt connection hole 304 and the spring probe module bolt connection hole 404 are screwed and fixed through a lower connection bolt 8.

[0036] The pressure display module 2 includes a pressure sensor 201, a pressure sensor wire 202, and a pressure display screen 203. The pressure sensor 201 is arranged on the lower surface of the pressure module 1. The pressure sensor 201 is electrically connected to the pressure display screen 203 through the pressure sensor wire 202. Four pressure sensors 201 are provided on the pressure module 1, and two pressure display screens 203 are provided on the pressure display module 2. The pressure display screens 203 are respectively electrically connected to the pressure sensors 201 on the left and right sides of the pressure module 1 through the pressure sensor wires 202. The pressure module 1 and the spring probe module 3 can be connected together through an upper connection bolt 7. The pressure of the spring probe 6 can be displayed in real time through the pressure sensor 201 and the pressure display screen 203. The pressure applied to the spring probe 6 can be controlled by controlling the upper connection bolt 7, and the magnitude of the pressure is fed back in real time through the pressure sensor 201 and the pressure display screen 203.

[0037] The upper surface of the spring probe module 3 is provided with a pressure module corresponding frame 301 corresponding to the pressure module 1. A spring probe through hole 302 corresponding to the pressure sensor 201 is arranged in the pressure module corresponding frame 301.

[0038] The sample base 4 is provided with a sample placement frame 401. Probe placement frames 402 are arranged at the corners of the sample placement frame 401. The probe placement frames 402 correspond to the spring probe through holes 302. The top end of the spring probe 6 contacts the pressure sensor 201, and the bottom end of the spring probe 6 passes through the spring probe through hole 302 and corresponds to the probe placement frame 402. The pressure module 1 can apply pressure to the spring probe 6, and at the same time, the pressure sensor 201 can feedback the pressure at the top end of the spring probe 6 in real time.

[0039] The number of the spring probes 6 is four, and the tops of the tops of the probe tip caps 601 respectively contact the four pressure sensors 201. The spring probes 6 can be replaced according to test requirements. The four pressure sensors 201 can respectively display the pressures of the four spring probes 6, that is, ensure that the pressures applied by the four spring probes 6 to the graphene electrodes 501 of the low and medium doped semiconductor material samples 5 are consistent.

[0040] A low- and medium-doped semiconductor material sample 5 is placed in the sample placement frame 401. Graphene electrodes 501 are provided at the corners of the low- and medium-doped semiconductor material sample 5. The bottom end of the spring probe 6 is in pressure contact with the center of the graphene electrode 501. Heat conduction holes 403 are provided in the sample placement frame 401. The function of the heat conduction holes 403 is to ensure uniform heat conduction of the low- and medium-doped semiconductor material sample 5. The low- and medium-doped semiconductor material sample 5 is square, and the graphene electrodes 501 are arranged at the four corners of the low- and medium-doped semiconductor material sample 5 and are square in shape. The number of graphene layers of the graphene electrodes 501 is not more than ten layers. The size of the square graphene electrodes 501 should be as small as possible, but it depends on the size of the low- and medium-doped semiconductor material sample 5. It is necessary to ensure that the end of the needle shaft of the spring probe 6 should make good contact with the middle range of the graphene transferred to the semiconductor.

[0041] The graphene electrodes 501 can effectively relieve the Schottky junction or Fermi pinning effect through the function of modulating the work function, and can form an ohmic contact. Connecting with other components in the form of a spring probe with pressure can achieve a good connection effect. On the one hand, using the graphene electrodes 501 can effectively reduce the barrier height between the metal probe and the low- and medium-doped semiconductor. On the other hand, using the spring probe 6 with controllable pressure can effectively connect the metal probe with the low- and medium-doped semiconductor, where the graphene electrodes 501 serve as the medium connecting the low- and medium-doped semiconductor and the metal probe.

[0042] The spring probe 6 includes a probe needle shaft 604, a probe sleeve 603, a probe spring 602, and a probe top cap 601 arranged coaxially. The probe sleeve 603 includes a sleeve cavity and a sleeve limiting portion. The sleeve limiting portion is provided at the bottom end of the sleeve cavity, and the probe spring is sleeved in the sleeve cavity. The probe needle shaft 604 includes a needle shaft body, a needle shaft clamping portion, and a needle shaft end. The needle shaft clamping portion is provided at the upper part of the needle shaft body. The upper part of the needle shaft body is sleeved in the sleeve cavity, and the needle shaft clamping portion is clamped above the sleeve limiting portion. The needle shaft end is provided at the bottom end of the needle shaft body and is in contact with the center of the graphene electrode 502 in the sample placement frame 401. The probe top cap 601 is provided at the top end of the sleeve cavity. The top end of the probe top cap 601 is in contact with the pressure sensor 201. One end of the probe spring 602 abuts against the probe top cap 601, and the other end of the probe spring 602 abuts against the top plane of the probe needle shaft 604. The end of the needle shaft of the spring probe 6 presses on the graphene electrode 501, and non-destructive detection of the low- and medium-doped semiconductor material sample 5 can be achieved using the Van der Pauw method. The size of the end of the needle shaft of the spring probe 6 can be adjusted according to the measurement accuracy of the low- and medium-doped semiconductor material sample 5.

[0043] Using a spring probe module with pressure display according to the present invention, which is applicable to the test of the electrical properties of low and medium doped semiconductor materials, refines the conditions for testing low and medium doped semiconductors using the Van der Pauw method. In the actual work of testing using the Van der Pauw method, it is difficult to test low and medium doped semiconductors. The method of combining graphene electrodes with spring probes can effectively solve this problem. It changes the current situation of damage to low and medium doped semiconductor materials in most existing technologies and cannot be reused. The combination of spring probes and graphene electrodes can play a role in reducing the contact barrier, achieving accurate testing and can be tested on different Hall effect (Van der Pauw method) instruments to determine the accurate value by comparing the electrical properties of materials. At the same time, it reduces the possibility that the stability of the measurement results is affected by different usage methods when using the measuring device. Using a unified standard to exclude irrelevant factors from the results has greatly improved.

[0044] The foregoing description of the specific exemplary embodiments of the present invention is for purposes of illustration and exemplification. These descriptions are not intended to limit the invention to the precise forms disclosed, and it is apparent that many changes and variations are possible in light of the above teachings. The purpose of selecting and describing the exemplary embodiments is to explain the specific principles of the present invention and its practical applications, so that those skilled in the art can implement and utilize various different exemplary embodiments of the present invention, as well as various different selections and changes. Any simple modification, equivalent change, and modification made to the above exemplary embodiments shall fall within the protection scope of the present invention.

Claims

1. A spring probe module with pressure display, characterized in that, It includes a pressure module (1), a pressure display module (2), a spring probe module (3), a sample base (4) and a spring probe (6). The pressure display module (2) includes a pressure sensor (201), a pressure sensor wire (202) and a pressure display screen (203). The pressure sensor (201) is arranged on the lower surface of the pressure module (1), and the pressure sensor (201) is electrically connected to the pressure display screen (203) through the pressure sensor wire (202). On the upper surface of the spring probe module (3), there is a pressure module corresponding frame (301) corresponding to the pressure module (1), and in the pressure module corresponding frame (301), there is a spring probe through hole (302) corresponding to the pressure sensor (201). On the sample base (4), there is a sample placement frame (401), and at the corners of the sample placement frame (401), there are probe placement frames (402). The probe placement frames (402) correspond to the spring probe through holes (302). The top end of the spring probe (6) contacts the pressure sensor (201), and the bottom end of the spring probe (6) passes through the spring probe through hole (302) and corresponds to the probe placement frame (402). In the sample placement frame (401), a low-to-medium doped semiconductor material sample (5) is placed. At the corners of the low-to-medium doped semiconductor material sample (5), there are graphene electrodes (501). The bottom end of the spring probe (6) makes central pressure contact with the graphene electrode (501). There are four pressure sensors (201) on the pressure module (1), and there are two pressure display screens (203) in the pressure display module (2). The pressure display screens (203) are electrically connected to the pressure sensors (201) on the left and right sides of the pressure module (1) through the pressure sensor wires (202).

2. The spring probe module with pressure display according to claim 1, characterized in that, The spring probe (6) includes a probe shaft (604), a probe sleeve (603), a probe spring (602) and a probe top cover (601) arranged coaxially. The probe sleeve (603) includes a sleeve cavity and a sleeve limiting part. The sleeve limiting part is arranged at the bottom end of the sleeve cavity, and the probe spring is sleeved in the sleeve cavity. The probe shaft (604) includes a shaft body, a shaft clamping part and a shaft end. The shaft clamping part is arranged on the upper part of the shaft body. The upper part of the shaft body is sleeved in the sleeve cavity and the shaft clamping part is clamped above the sleeve limiting part. The shaft end is arranged at the bottom end of the shaft body and contacts the center of the graphene electrode (502) in the sample placement frame (401). The probe top cover (601) is arranged at the top end of the sleeve cavity. The top end of the probe top cover (601) contacts the pressure sensor (201). One end of the probe spring (602) abuts against the probe top cover (601), and the other end of the probe spring (602) abuts against the top plane of the probe shaft (604).

3. The spring probe module with pressure display according to claim 2, characterized in that, The pressure module (1) is provided with spring probe module bolt connection holes (101), the spring probe module (3) is provided with pressure module bolt connection holes (303), and the spring probe module bolt connection holes (101) and the pressure module bolt connection holes (303) are screwed and fixed through an upper connection bolt (7).

4. The spring probe module with pressure display according to claim 3, characterized in that The spring probe module (3) is provided with sample base bolt connection holes (304), the sample base (4) is provided with spring probe module bolt connection holes (404), and the sample base bolt connection holes (304) and the spring probe module bolt connection holes (404) are screwed and fixed through a lower connection bolt (8).

5. A spring probe module with pressure display according to claim 1, characterized in that, The sample placement frame (401) is provided with heat conduction holes (403).

6. The spring probe module with pressure display according to claim 2, characterized in that, The number of the spring probes (6) is four, and the tops of the probe top caps (601) are respectively in contact with four pressure sensors (201).

7. A spring probe module with pressure display according to claim 1, characterized in that, The low and medium doped semiconductor material sample (5) is square, the graphene electrodes (501) are arranged at the four corners of the low and medium doped semiconductor material sample (5) and are square in shape, and the number of graphene layers of the graphene electrodes (501) is not more than ten layers.

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