Word line driving structure, word line driver array and memory

Abstract

The embodiments of the present application relate to the field of semiconductors, and in particular to a word line driving structure, a word line driver array, and a memory, comprising: an active area extending in a first direction; a first control gate extending in a second direction and arranged in parallel and spaced in the first direction; a second control gate extending in the second direction and arranged in parallel and spaced in the first direction; a word line extending in the first direction and arranged in parallel and spaced in the second direction; two first control gates are arranged adjacent to each other, and the gap between the adjacent first control gates exposes the first active area, two second control gates are arranged adjacent to each other, and the gap between the adjacent second control gates exposes the first active area; a second control gate is arranged adjacent to a corresponding first control gate, and the gap between the adjacent first control gate and the second control gate exposes the second active area. The embodiments of the present application are used to improve the electrical performance of the word line driving structure, the word line driver array, and the memory.

Description

Technical Field

[0001] Embodiments of the present application relate to the semiconductor field, and in particular to a word line driving structure, a word line driver array, and a memory. Background Art

[0002] With the advancement of science and technology, the structure of integrated circuits has been continuously miniaturized, and the size of the components that make up the structure of integrated circuits and the spacing between adjacent components have also been reduced. As the spacing between adjacent components gradually decreases, in order to avoid short circuit problems, the process margin of other components connected to specific components also decreases, and the difficulty of component production increases; in addition, as the spacing between adjacent components gradually decreases, short circuit problems are also prone to occur at the corners of interconnected metal. Summary of the invention

[0003] Embodiments of the present application provide a word line driving structure, a word line driver array and a memory to improve the electrical performance of the word line driving structure, the word line driver array and the memory.

[0004] The embodiment of the present application provides a word line driving structure, comprising: an active area extending in a first direction, and partly belonging to the first active area and partly belonging to the second active area; i first control gates extending in a second direction and arranged in parallel and spaced relation on the top surface of the active area in the first direction; i second control gates extending in the second direction and arranged in parallel and spaced relation on the top surface of the active area in the first direction; i word lines extending in the first direction and arranged in parallel and spaced relation on the active area in the second direction; two first control gates are arranged adjacent to each other, and the active area exposed by the gap between the adjacent first control gates is the first active area, two second control gates are arranged adjacent to each other, and the active area exposed by the gap between the adjacent second control gates is the first active area, and the first active area is used to receive a voltage control signal; the second control gate is arranged adjacent to the corresponding first control gate, and the active area exposed by the gap between the adjacent first control gate and the second control gate is the second active area, and the second active area is used to electrically connect the corresponding word line; wherein the first direction intersects with the second direction, and i is an even number greater than or equal to 2.

[0005] The first control gates are arranged parallel to each other, the second control gates are arranged parallel to each other, and the word lines are arranged parallel to each other. When preparing the above-mentioned first control gates, second control gates or word lines, the same mask and the same process can be used to prepare different first control gates, second control gates or word lines respectively, so as to reduce the number of mask plates and reduce the difficulty of process production. Alternatively, a mask plate with parallel opening patterns can be used to simultaneously prepare the above-mentioned first control gates, second control gates or word lines, so as to reduce the difficulty of mask plate preparation, thereby improving the process yield and reducing the process cost.

[0006] In addition, arranging adjacent word lines in parallel is helpful in avoiding short circuits between adjacent word lines, and making the stress distribution between adjacent word lines more uniform, avoiding stress concentration from affecting the performance of transistors in the word line driving structure, and ensuring that the electrical performance of the word lines and the word line driving structure meets preset requirements and has high stability.

[0007] In addition, the projections of the first control gate, the second control gate and the word line on the active area are straight lines. By arranging the first control gate, the second control gate and the word line in straight lines, the difficulty of forming the first control gate, the second control gate and the word line is reduced, and the risk of short circuit between the first control gate, the second control gate and the word line and the risk of open circuit of the word line are reduced.

[0008] In addition, the word line driving structure further includes: a connection gate, which is arranged on the first active region and contacts two adjacent first control gates. The adjacent first control gates are connected by the connection gate to save the layout area of ​​the interconnection metal that electrically connects the first control gates.

[0009] In addition, the word line driving structure also includes: i control metal layers, each control metal layer is electrically connected to the corresponding second control gate and corresponds to the sub-control signal, and is used to provide the sub-control signal to the electrically connected second control gate; a gate control metal layer is electrically connected to all the first control gates and is used to provide the main word line control signal; a voltage control metal layer is electrically connected to the active area and is used to provide a voltage control signal.

[0010] In addition, the voltage control metal layer extends in the first direction and is arranged parallel to the word line in the second direction. The voltage control metal layer arranged parallel to the word line is conducive to reducing the risk of short circuit or open circuit of the word line driving structure and avoiding stress concentration affecting the performance of transistors in the word line driving structure.

[0011] In addition, the gate control metal layer extends in the first direction and is arranged parallel to the word line in the second direction. The gate control metal layer arranged parallel to the word line is conducive to reducing the risk of short circuit or open circuit of the word line driving structure and avoiding stress concentration affecting the performance of transistors in the word line driving structure.

[0012] In addition, the regulating metal layer, the gate control metal layer and the voltage control metal layer are arranged on the same plane as the word line. The regulating metal layer, the gate control metal layer and the voltage control metal layer are arranged on the same layer, which simplifies the formation process of the regulating metal layer, the gate control metal layer and the voltage control metal layer.

[0013] In addition, the word line is set by a word line metal layer, and the first control gate and the second control gate are made of polysilicon material.

[0014] In addition, taking i word lines as a whole, the voltage control metal layer and the gate control metal layer are located on opposite sides of the i word lines, and the gate control metal layer and the regulation metal layer are located on the same side of the i word lines. When the word line drive structure is subsequently integrated to form a word line driver array, multiple word line drive structures can share the voltage control metal layer to save layout area.

[0015] In addition, the control metal layer is electrically connected to the second control gate based on the control contact layer, and the control contact layer is arranged on the second control gate; the gate control metal layer is electrically connected to the first control gate based on the control contact layer, and the control contact layer is arranged on the first control gate; the voltage control metal layer is electrically connected to the active area based on the voltage contact layer, and the voltage contact layer is arranged on the first active area; the word line is electrically connected to the second active area based on the word line contact layer, and the word line contact layer is arranged on the second active area.

[0016] In addition, the i first control gates include: a first gate, a second gate, a third gate and a fourth gate; the i second control gates include: a first sub-control gate, a second sub-control gate, a third sub-control gate and a fourth sub-control gate; the i word lines include: a first word line, a second word line, a third word line and a fourth word line; wherein, the first gate and the second gate are arranged adjacent to each other, and the third gate and the fourth gate are arranged adjacent to each other; the first sub-control gate and the first gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the first word line, the second sub-control gate and the second gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the second word line, the third sub-control gate and the third gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the third word line, and the fourth sub-control gate and the fourth gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the fourth word line.

[0017] The embodiment of the present application also provides a word line driver array, comprising: a plurality of the above-mentioned word line driver structures; the plurality of word line driver structures are arranged in sequence in the second direction, and the main word line control signal corresponds to the word line driver structure one by one. By integrating the above-mentioned word line driver structures to form a word line driver array, it is beneficial to ensure that the electrical performance of the formed word line driver array meets the preset requirements and has high stability.

[0018] In addition, a plurality of word line driving structures share the second control gate, so that the difficulty of forming the word line driver array is simplified.

[0019] In addition, the word line driving structure further includes: a regulating metal layer, each regulating metal layer is electrically connected to a corresponding second control gate, and corresponds to a sub-control signal, and is used to provide a sub-control signal to the electrically connected second control gate, and multiple word line driving structures share the regulating metal layer. Multiple word line driving structures can share the regulating metal layer to save the layout area of ​​the word line driver array.

[0020] In addition, the word line driving structure further includes: a voltage-controlled metal layer, which extends in the first direction and is arranged parallel to the word line in the second direction and spaced apart, and in the multiple word line driving structures, the voltage-controlled metal layer is shared between two of them. The multiple word line driving structures can share the voltage-controlled metal layer to save the layout area of ​​the word line driver array.

[0021] The embodiment of the present application also provides a memory, comprising: a plurality of the above-mentioned word line drive structures arranged in sequence, wherein the extension direction of the word lines in the word line drive structures is the same as the extension direction of the word lines in the memory. By integrating the word line drive structures to form a word line driver array, it is beneficial to ensure that the electrical performance of the formed memory meets the preset requirements and has high stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of a circuit structure of a word line driving structure provided in an embodiment of the present application;

[0023] Figure 2 A schematic diagram of a layout of a word line driving structure provided in an embodiment of the present application;

[0024] Figure 3 A schematic diagram of a layout of a word line driving structure with a connection gate provided in an embodiment of the present application;

[0025] Figure 4 and Figure 5 A schematic diagram of the layout of a control metal layer, a gate control metal layer and a voltage control metal layer provided in an embodiment of the present application;

[0026] Figure 6 A schematic diagram of a circuit structure of a word line driving structure with four word lines provided in one embodiment of the present application;

[0027] Figure 7 Corresponding to an embodiment of the present application Figure 6 A schematic diagram of the layout of the word line driving structure shown;

[0028] Figure 8 A schematic diagram of the circuit structure of a word line driver array provided in another embodiment of the present application;

[0029] Fig. 9 A schematic diagram of a layout of a word line driver array provided in accordance with another embodiment of the present application. DETAILED DESCRIPTION

[0030] As the spacing between adjacent components gradually decreases, in order to avoid short-circuit problems, the process margin of other components connected to specific components also decreases, and the difficulty of component manufacturing increases; in addition, as the spacing between adjacent components gradually decreases, the interconnecting metal is also prone to short-circuit problems at the corners.

[0031] An embodiment of the present application provides a word line driving structure to improve the electrical performance of the word line driving structure, the word line driver array and the memory.

[0032] Those skilled in the art will appreciate that, in the various embodiments of the present application, many technical details are provided in order to enable readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present application can also be implemented.

[0033] Figure 1 A schematic diagram of the circuit structure of the word line driving structure provided in this embodiment, Figure 2 A schematic diagram of the layout of the word line driving structure provided in this embodiment, Figure 3 A schematic diagram of a layout of a word line driving structure with a connection gate provided in this embodiment, Figure 4 and Figure 5 A schematic diagram of the layout of the control metal layer, the gate control metal layer and the voltage control metal layer provided in this embodiment, Figure 6 A schematic diagram of a circuit structure of a word line driving structure with four word lines provided in this embodiment, Figure 7 The corresponding Figure 6 The word line driving structure provided in this embodiment is further described in detail below in conjunction with the accompanying drawings, as follows:

[0034] refer to Figure 1 The word line driving structure 10 is usually controlled by a main word line control signal (main word linesignal). Figure 1 Take signal A as the main word line control signal as an example for explanation; the main word line control signal A is input into different sub-word line units, and each sub-word line unit includes a first control MOS tube group consisting of a PMOS control tube and an NMOS control tube; wherein, one end of the PMOS control tube is connected to the control signal Fx, and the other end is connected to the word line WLx. When the PMOS control tube is turned on, the control signal Fx is used to pull the word line WLx to a high level; one end of the NMOS control tube is connected to the voltage control signal V, and the other end is connected to the word line WLx. When the NMOS control tube is turned on, the voltage control signal V is used to pull the word line WLx down to a low level; thereby realizing the level control of multiple word lines WLx through a main word line control signal A. It should be noted that in the above WLx, x can be any positive integer. The purpose of the description of WLx in this embodiment is not to constitute a limitation on the PMOS control tube and the NMOS control tube, so that the above introduction is applicable to all sub-word line units.

[0035] In addition, in order to avoid the interference of coupling noise on the level of the word line WLx, the level of the word line WLx is usually pulled down again by a second control MOS tube connected to the word line WLx and close to the side of the storage unit. Since the effect of the second control MOS tube is the same as that of the NMOS control tube in the first control MOS tube group, in the layout of the word line driving structure 10, the second control MOS tube and the NMOS control tube are arranged in the same active area.

[0036] In this embodiment, a new layout structure is designed for the second control MOS transistor and the NMOS control transistor arranged in the same active area to improve the electrical performance of the word line drive structure. Figure 2 It should be noted that, in the embodiment of the present application, the layout of the word line driving structure 10 is a top view of the word line driving structure 10, and the word line driving structure 10 includes:

[0037] The active area 100 extends in the first direction D1, and partly belongs to the first active area 110, and partly belongs to the second active area 120; i first control gates 101 extend in the second direction D2, and are arranged in parallel and spaced in the first direction D1 on the top surface of the active area 100; i second control gates 102 extend in the second direction D2, and are arranged in parallel and spaced in the first direction D1 on the top surface of the active area 100; i word lines WLx extend in the first direction D1, and are arranged in parallel and spaced in the second direction D2 on the active area 100. Among them, the first control gates 101 are arranged adjacent to each other, and the active area 100 exposed by the gap between the adjacent first control gates 101 is the first active area 110, the second control gates 102 are arranged adjacent to each other, and the active area 100 exposed by the gap between the adjacent second control gates 102 is the first active area 110, the second control gates 120 are arranged adjacent to the corresponding first control gates 110, and the active area 100 exposed by the gap between the adjacent first control gates 110 and the second control gates 120 is the second active area 120; the first active area 110 is used to receive the voltage control signal V, and the second active area 120 is used to electrically connect to the corresponding word line WLx.

[0038] In this embodiment, i is an even number greater than or equal to 2, including: 2, 4, 6, 8, etc.; in addition, the first direction D1 and the second direction D1 intersect, and this embodiment takes the first direction D1 and the second direction D2 as an example for illustration, which does not constitute a limitation of this embodiment. In other embodiments, the first direction D1 and the second direction D2 may be set at a certain angle. The first control gates 101 are arranged parallel to each other, the second control gates 102 are arranged parallel to each other, and the word lines WLx are arranged parallel to each other. When preparing the first control gates 101, the second control gates 102 or the word lines WLx, the same mask and the same process may be used to prepare different first control gates 101, the second control gates 102 or the word lines WLx, so as to reduce the number of masks and the difficulty of process production, or the first control gates 101, the second control gates 102 or the word lines WLx may be prepared simultaneously using a mask with parallel opening patterns, so as to reduce the difficulty of mask preparation, thereby improving the process yield and reducing the process cost.

[0039] In addition, arranging adjacent word lines WLx in parallel is beneficial to avoiding short circuits between adjacent word lines WLx, and is beneficial to making the stress distribution between adjacent word lines WLx more uniform, avoiding stress concentration from affecting the performance of transistors in the word line driving structure 10, and is beneficial to ensuring that the electrical performance of the word lines WLx and the word line driving structure 10 meets the preset requirements and has higher stability.

[0040] Among them, the word line WLx is electrically connected to the second active area 120 based on the word line contact layer 300, the word line contact layer 300 is set on the second active area 120, and the word line contact layer is arranged in sequence on different second active areas 120 in the second direction D2 to prevent the risk of short circuit or open circuit of the word line WLx.

[0041] In this embodiment, the first control gate 101 and the second control gate 102 are made of polysilicon material.

[0042] In one example, the projections of the first control gate 101, the second control gate 102, and the word line WLx on the active area 100 are straight lines. By arranging the first control gate 101, the second control gate 102, and the word line WLx in straight lines, the difficulty of forming the first control gate 101, the second control gate 102, and the word line WLx is reduced, and the risk of short circuit between the first control gate 101, the second control gate 102, and the word line WLx and the risk of open circuit between the word line WLx are reduced.

[0043] refer to Figure 3 In one example, the word line driving structure 10 further includes: a connecting gate 200 , which is disposed on the first active region 110 and contacts two adjacent first control gates 101 .

[0044] The first control gate 101 receives the main word line control signal A through the control contact layer 204. Figure 2 As for the word line driving structure 10 shown in FIG. Figure 2 Each first control gate 101 needs to receive the main word line control signal A through the control contact layer 204, and Figure 3 In the word line driving structure 10 shown, adjacent first control gates 101 are electrically connected through the connecting gate 200, thereby saving a layout position for a control contact layer 204. Adjacent first control gates 101 are connected through the connecting gate 200 to save part of the layout area of ​​the interconnection metal electrically connecting the first control gates 101.

[0045] refer to Figure 4 and Figure 5 , the word line driving structure 10 further includes:

[0046] i control metal layers 302, each control metal layer is electrically connected to the corresponding second control gate 102, and corresponds to the sub-control signal cx, and is used to provide the sub-control signal cx to the electrically connected second control gate 102. It should be noted that in the above cx, x can be any positive integer (such as c1, c2, c3, etc.), and the purpose of the expression of cx in this embodiment is not to constitute a limitation on a specific sub-control signal, so that the above description is applicable to all second control gates 102.

[0047] The gate control metal layer 303 is electrically connected to the first control gate 101 and is used to provide a main word line control signal A.

[0048] The voltage control metal layer 301 is electrically connected to the active area 120 and is used to provide a voltage control signal V.

[0049] Wherein, the metal layer 302 is regulated based on providing the regulated contact layer 203 (reference Figure 3 ) is electrically connected to the second control gate 102, the control contact layer 203 is arranged on the second control gate 102, and the control metal layer 302 is arranged on the control contact layer 203; the gate control metal layer 303 is based on the control contact layer 204 (reference Figure 3 ) is electrically connected to the first control gate 101, the control contact layer 204 is arranged on the first control gate 101, and the gate control metal layer 303 is arranged on the control contact layer 204; the voltage control metal layer 301 is based on the voltage contact layer 202 (reference Figure 3 ) is electrically connected to the first active area 110 , the voltage contact layer 202 is disposed on the first active area 110 , and the voltage control metal layer 301 is disposed on the voltage contact layer 202 .

[0050] In one example, refer to Figure 4 and Figure 5The voltage control metal layer 301 extends in the first direction D1 and is arranged parallel to the word line WLx in the second direction D2. The voltage control metal layer 301 arranged parallel to the word line WLx is beneficial to reducing the risk of short circuit or open circuit of the word line driving structure 10 and avoiding stress concentration from affecting the performance of the transistor in the word line driving structure 10.

[0051] In one example, refer to Figure 5 , the gate control metal layer 303 extends in the first direction D1, and is arranged in parallel with the word line WLx in the second direction D2. The gate control metal layer 303 arranged in parallel with the word line WLx is conducive to reducing the risk of short circuit or open circuit of the word line driving structure 10, and avoiding stress concentration from affecting the performance of the transistor in the word line driving structure 10. Further, taking i word lines WLx as a whole, the voltage control metal layer 301 and the gate control metal layer 303 are located on opposite sides of the i word lines WLx, and the gate control metal layer 303 and the regulating metal layer 302 are located on the same side of the i word lines WLx. When the word line driving structure 10 is subsequently integrated to form a word line driver array, multiple word line driving structures 10 can share the voltage control metal layer 301 to save layout area.

[0052] In one example, the regulating metal layer 302, the gate control metal layer 303 and the voltage control metal layer 301 are arranged on the same plane as the word line WLx; the regulating metal layer 302, the gate control metal layer 303 and the voltage control metal layer 301 are arranged on the same layer, which simplifies the formation process of the regulating metal layer 302, the gate control metal layer 303 and the voltage control metal layer 301. Further, the word line WLx is arranged using the word line metal layer, so that the word line WLx is formed simultaneously in the process of forming the regulating metal layer 302, the gate control metal layer 303 and the voltage control metal layer 301, simplifying the formation process of the word line driving structure 10.

[0053] It should be noted that Figure 2 to Figure 5 The accompanying drawings show four groups of second control MOS transistors and NMOS control transistors arranged in the same active area; in other embodiments, the first control gate 101 and the second control gate 102 can be continuously arranged in the first direction D1, and the word line WLx can be continuously arranged in the second direction D2, so as to set more second control MOS transistors and NMOS control transistors.

[0054] Specifically, in one example, i first control gates 101 include: a first gate, a second gate, a third gate and a fourth gate; i second control gates 102 include: a first sub-control gate, a second sub-control gate, a third sub-control gate and a fourth sub-control gate; i word lines WLx include: a first word line WL1, a second word line WL2, a third word line WL3 and a fourth word line WL4. Among them, the first gate and the second gate are arranged adjacent to each other, and the third gate and the fourth gate are arranged adjacent to each other; the first sub-control gate and the first gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the first word line WL1, the second sub-control gate and the second gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the second word line WL2, the third sub-control gate and the third gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the third word line WL3, and the fourth sub-control gate and the fourth gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the fourth word line WL4. Reference Figure 6 and Figure 7 , Figure 6 and Figure 7 The layout of the corresponding transistor is given in Figure 6 , the NMOS transistors include N11, N12, N13 and N14, and the second control MOS transistors include N21, N22, N23 and N24, wherein N11 and N21 correspond to word line WL1, N12 and N22 correspond to word line WL2, N13 and N23 correspond to word line WL3, and N14 and N24 correspond to word line WL4. Figure 7 In the first direction, N24, N14, N13, N23, N22, N12, N11 and N21 are arranged in sequence, wherein one end of N24 receives a voltage control signal V, and the other end is shared with one end of N14 and connected to the fourth word line WL4, the other end of N14 is shared with one end of N13 and receives the voltage control signal V, the other end of N13 is shared with one end of N23 and connected to the third word line WL3, the other end of N23 is shared with one end of N22 and receives the voltage control signal V, the other end of N22 is shared with one end of N12 and connected to the second word line WL2, the other end of N12 is shared with one end of N11 to receive the voltage control signal V, the other end of N11 is shared with one end of N21 and connected to the first word line WL1, and the other end of N21 receives the voltage control signal V.

[0055] In this embodiment, the first control gates 101 are arranged parallel to each other, the second control gates 102 are arranged parallel to each other, and the word lines WLx are arranged parallel to each other. When preparing the first control gates 101, the second control gates 102 or the word lines WLx, the same mask and the same process can be used to prepare different first control gates 101, second control gates 102 or word lines WLx respectively, so as to reduce the number of masks and reduce the difficulty of process production. Alternatively, a mask with parallel opening patterns is used to simultaneously prepare the first control gates 101, the second control gates 102 or the word lines WLx, so as to reduce the difficulty of mask preparation, thereby improving the process yield and reducing the process cost. In addition, the parallel arrangement of adjacent word lines WLx is conducive to avoiding short circuits between adjacent word lines WLx, and is conducive to making the stress distribution between adjacent word lines WLx more uniform, avoiding stress concentration from affecting the performance of transistors in the word line driving structure 10, and is conducive to ensuring that the electrical performance of the word lines WLx and the word line driving structure 10 meets the preset requirements and has high stability.

[0056] Another embodiment of the present application provides a word line driver array. By integrating the above-mentioned word line driving structure to form a word line driver array, it is beneficial to ensure that the electrical performance of the formed word line driver array meets preset requirements and has high stability.

[0057] Figure 8 A schematic diagram of the circuit structure of the word line driver array provided in this embodiment, Fig. 9 The word line driver array provided in this embodiment is a schematic diagram of the layout. The word line driver array provided in this embodiment is further described in detail below in conjunction with the accompanying drawings, as follows:

[0058] The word line driver array includes: a plurality of the above-mentioned word line driver structures, the plurality of word line driver structures are sequentially arranged in the second direction D2, and the main word line control signals correspond to the word line driver structures one by one.

[0059] refer to Figure 8 This embodiment is specifically described by taking a word line driver array composed of two word line driver structures as an example, wherein one word line driver structure receives a main word line control signal A, and the other word line driver structure receives a main word line control signal B. It should be noted that in other embodiments, the number of word line driver arrays can be set arbitrarily, and the number of word lines in the word line driver structure can also be set arbitrarily. This embodiment does not constitute a limitation on the number of word line driver structures in the two word line driver arrays, nor does it constitute a limitation on the number of word lines in the word line driver structure.

[0060] In one example, a plurality of word line driving structures share the second control gate, so that the difficulty of forming the word line driver array is simplified.

[0061] In one example, the word line driving structure further includes: a regulating metal layer, each regulating metal layer is electrically connected to a corresponding second control gate, and corresponds to a sub-control signal, and is used to provide a sub-control signal to the electrically connected second control gate, and multiple word line driving structures share the regulating metal layer. Multiple word line driving structures can share the regulating metal layer to save the layout area of ​​the word line driver array.

[0062] In one example, the word line driving structure further includes: a voltage-controlled metal layer, the voltage-controlled metal layer extending in the first direction D1, and arranged in parallel with the word line WLx in the second direction, and the voltage-controlled metal layer is shared between two of the multiple word line driving structures. Multiple word line driving structures can share the voltage-controlled metal layer to save the layout area of ​​the word line driver array.

[0063] Since the above-mentioned embodiments correspond to the present embodiment, the relevant technical details mentioned in the above-mentioned embodiments are still valid in the present embodiment, and the technical effects that can be achieved in the above-mentioned embodiments can also be achieved in the present embodiment. In order to reduce repetition, they will not be repeated here.

[0064] Another embodiment of the present application provides a memory, comprising: a plurality of the above-mentioned word line drive structures arranged in sequence, wherein the extension direction of the word lines in the word line drive structures is the same as the extension direction of the word lines in the memory. By integrating the word line drive structures to form a word line driver array, it is beneficial to ensure that the electrical performance of the formed memory meets the preset requirements and has high stability.

[0065] Since the above-mentioned embodiments correspond to the present embodiment, the relevant technical details mentioned in the above-mentioned embodiments are still valid in the present embodiment, and the technical effects that can be achieved in the above-mentioned embodiments can also be achieved in the present embodiment. In order to reduce repetition, they will not be repeated here.

[0066] It should be noted that, in order to highlight the innovative part of the present application, the present embodiment does not introduce units that are not closely related to solving the technical problems raised by the present application, but this does not mean that there are no other units in the present embodiment; ordinary technicians in this field can understand that the above-mentioned embodiments are specific embodiments for implementing the present application, and in actual applications, various changes can be made to them in form and details without departing from the spirit and scope of the present application.

Claims

1. A word line driving structure, characterized in that: include: An active region extending in a first direction and partially belonging to the first active region and partially belonging to the second active region; i first control gates extending in the second direction and arranged in parallel and spaced apart on the top surface of the active region in the first direction; i second control gates extending in the second direction and arranged in parallel and spaced apart on the top surface of the active region in the first direction; i word lines extending in a first direction and arranged in parallel and spaced apart on the active area in a second direction; The first control gates are arranged adjacent to each other in pairs, and the active area exposed by the gap between the adjacent first control gates is the first active area, and the second control gates are arranged adjacent to each other in pairs, and the active area exposed by the gap between the adjacent second control gates is the first active area, and the first active area is used to receive a voltage control signal; The second control gate is disposed adjacent to the corresponding first control gate, and the active area exposed by the gap between the adjacently disposed first control gate and the second control gate is the second active area, and the second active area is used to electrically connect the corresponding word line; The first direction intersects with the second direction, and i is an even number greater than or equal to 2.

2. The word line driving structure according to claim 1, characterized in that: Projections of the first control gate, the second control gate, and the word line on the active region are straight lines.

3. The word line driving structure according to claim 1, characterized in that: Also includes: The connecting gate is disposed on the first active region and contacts two adjacent first control gates.

4. The word line driving structure according to claim 1, characterized in that: Also includes: i regulating metal layers, each regulating metal layer being electrically connected to a corresponding second control gate and corresponding to a sub-control signal, and being used to provide the sub-control signal to the electrically connected second control gate; A gate control metal layer, electrically connected to the first control gate, for providing a main word line control signal; The voltage control metal layer is electrically connected to the active area and is used to provide the voltage control signal.

5. The word line driving structure according to claim 4, characterized in that: The voltage control metal layer extends in a first direction and is arranged in parallel and spaced apart from the word line in a second direction.

6. The word line driving structure according to claim 4, characterized in that: The gate control metal layer extends in a first direction and is arranged in parallel and spaced apart from the word line in a second direction.

7. The word line driving structure according to claim 4, characterized in that: The regulating metal layer, the gate control metal layer and the voltage control metal layer are arranged on the same plane as the word line.

8. The word line driving structure according to claim 7, characterized in that: The word line is provided by a word line metal layer, and the first control gate and the second control gate are made of polysilicon material.

9. The word line driving structure according to claim 4 or 7, characterized in that: Taking i word lines as a whole, the voltage control metal layer and the gate control metal layer are located on two opposite sides of the i word lines, and the gate control metal layer and the regulation metal layer are located on the same side of the i word lines.

10. The word line driving structure according to claim 4, characterized in that: include: The regulating metal layer is electrically connected to the second control gate based on the regulating contact layer, and the regulating contact layer is arranged on the second control gate; The gate control metal layer is electrically connected to the first control gate based on a control contact layer, and the control contact layer is disposed on the first control gate; The voltage control metal layer is electrically connected to the active area based on a voltage contact layer, and the voltage contact layer is disposed on the active area; The word line is electrically connected to the second active region based on a word line contact layer, and the word line contact layer is disposed on the second active region.

11. The word line driving structure according to claim 1, characterized in that: include: The first control gates include: a first gate, a second gate, a third gate and a fourth gate; The second control gates include: a first sub-control gate, a second sub-control gate, a third sub-control gate and a fourth sub-control gate; The i word lines include: a first word line, a second word line, a third word line and a fourth word line; wherein, The first gate and the second gate are arranged adjacent to each other, and the third gate and the fourth gate are arranged adjacent to each other; the first sub-control gate and the first gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the first word line, the second sub-control gate and the second gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the second word line, the third sub-control gate and the third gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the third word line, and the fourth sub-control gate and the fourth gate are arranged adjacent to each other, and the exposed second active area is electrically connected to the fourth word line.

12. A word line driver array, characterized in that: include: A word line driving structure according to any one of claims 1 to 11; The plurality of word line driving structures are arranged in sequence in the second direction, and the main word line control signals correspond to the word line driving structures one by one.

13. The word line driver array according to claim 12, wherein: A plurality of the word line driving structures share a second control gate.

14. The word line driver array according to claim 13, wherein: The word line driving structure also includes: a regulating metal layer, each of which is electrically connected to the corresponding second control gate and corresponds to a sub-control signal, and is used to provide the sub-control signal to the electrically connected second control gate, and multiple word line driving structures share the regulating metal layer.

15. The word line driver array according to claim 12, wherein: The word line driving structure further includes: a voltage-controlled metal layer, which extends in a first direction and is arranged parallel to the word line and spaced apart in a second direction. In a plurality of the word line driving structures, two or three of the voltage-controlled metal layers are shared.

16. A memory, characterized in that: include: A plurality of word line driving structures according to any one of claims 1 to 11 are arranged in sequence, wherein the extending direction of the word lines in the word line driving structures is the same as the extending direction of the word lines in the memory.

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