Wafer tray and temperature control method for wafer tray

Abstract

The application provides a wafer tray, a temperature control method of the wafer tray and a computer readable storage medium. The wafer tray comprises: a tray body, at least comprising a first subzone in a central region and a second subzone in an edge region; a plurality of first semiconductor refrigerators vertically arranged in the tray body radially and distributed along the boundary of the first subzone and / or the second subzone; and a controller configured to: acquire a first temperature of the first subzone and a second temperature of the second subzone; and according to the magnitude of the first temperature and the second temperature, provide a driving voltage with a corresponding direction and / or a corresponding amplitude to each first semiconductor refrigerator to control each first semiconductor refrigerator to perform directional heat transfer in the corresponding direction between the first subzone and the second subzone.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer tray, a method for controlling the temperature of a wafer tray, and a corresponding computer-readable storage medium. Background Technology

[0002] In the semiconductor field, temperature control of the central and outer regions of a semiconductor heating plate is crucial. In existing heating plates, it is difficult to guarantee temperature uniformity between the central and outer regions, and the high and low temperatures of the central and outer regions of a single-zone heating plate cannot be switched. Furthermore, because the temperature boundaries of traditional dual-zone heating plates are not clearly defined and can only be achieved through heating wire layout, the adjustable range is limited. In addition, the energy in the high-temperature portion of a traditional dual-zone heating plate can only be dissipated through heat transfer; it cannot be transferred from one area requiring cooling to another area requiring heating, resulting in low energy utilization efficiency.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a wafer tray to realize the temperature zone control and temperature difference adjustment functions of the central area and the edge area of ​​the heating plate, improve the energy utilization efficiency of the heating plate, and expand the temperature adjustment range of each zone. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] In order to overcome the above-mentioned defects in the prior art, the present invention provides a wafer tray, a temperature control method for a wafer tray, and a corresponding computer-readable storage medium, which can realize temperature zone control and temperature difference adjustment functions for the central and edge areas of the heating plate, improve the energy utilization efficiency of the heating plate, and expand the temperature adjustment range of each zone.

[0006] Specifically, the wafer tray provided according to a first aspect of the present invention includes: a tray body, comprising at least a first partition located in a central region and a second partition located in an edge region; a plurality of first semiconductor coolers disposed radially in the tray body perpendicular to the tray body and distributed along the boundaries of the first partition and / or the second partition; and a controller configured to: acquire a first temperature of the first partition and a second temperature of the second partition; and provide a driving voltage of corresponding direction and / or corresponding amplitude to each of the first semiconductor coolers according to the magnitude of the first temperature and the second temperature, so as to control each of the first semiconductor coolers to perform directional heat transfer in a corresponding direction between the first partition and the second partition.

[0007] Furthermore, in some embodiments of the present invention, the step of providing a driving voltage of corresponding direction and / or corresponding amplitude to each of the first thermoelectric coolers according to the magnitude of the first temperature and the second temperature to control each of the first thermoelectric coolers to perform directional heat transfer in a corresponding direction between the first partition and the second partition includes: providing a positive driving voltage to each of the first thermoelectric coolers in response to the first temperature being greater than the second temperature to control each of the first thermoelectric coolers to perform directional heat transfer from the first partition to the second partition; providing a negative driving voltage to each of the first thermoelectric coolers in response to the first temperature being less than the second temperature to control each of the first thermoelectric coolers to perform directional heat transfer from the second partition to the first partition; and stopping the power supply to each of the first thermoelectric coolers in response to the first temperature being equal to the second temperature to isolate heat transfer between the first partition and the second partition.

[0008] Furthermore, in some embodiments of the present invention, the step of providing a driving voltage of corresponding direction and / or corresponding amplitude to each of the first thermoelectric coolers according to the magnitude of the first temperature and the second temperature, so as to control each of the first thermoelectric coolers to perform directional heat transfer in the corresponding direction between the first partition and the second partition, further includes: calculating the difference between the first temperature and the second temperature; determining the amplitude of the driving voltage according to the difference; and providing a driving voltage of the amplitude to each of the first thermoelectric coolers to control each of the first thermoelectric coolers to perform quantitative heat transfer in the corresponding direction between the first partition and the second partition.

[0009] Furthermore, in some embodiments of the present invention, the tray body further includes at least one third partition located between the first partition and the second partition, and the wafer tray further includes a plurality of second semiconductor coolers, wherein the plurality of first semiconductor coolers are distributed along the boundary of the first partition and the adjacent third partition, and the plurality of second semiconductor coolers are distributed along the boundary of the third partition and its outer adjacent partition.

[0010] The controller is further configured to: acquire a third temperature of the third partition; and provide a driving voltage of corresponding direction and / or corresponding amplitude to each of the first and second thermoelectric coolers according to the magnitude of the first temperature, the second temperature and the third temperature, so as to control each of the first and second thermoelectric coolers to perform directional heat transfer in the corresponding direction between the first partition, each of the third partition and the second partition.

[0011] Furthermore, in some embodiments of the present invention, the second partition includes a plurality of second sub-partitions distributed circumferentially along the tray body, and the wafer tray further includes a plurality of third semiconductor coolers, wherein the plurality of third semiconductor coolers are disposed circumferentially in the tray body perpendicular to the tray body, and the controller is further configured to: acquire a fourth temperature of each second sub-partition; and provide a driving voltage of corresponding direction and / or corresponding amplitude to each third semiconductor cooler according to the magnitude of each fourth temperature, so as to control each third semiconductor cooler to perform directional heat transfer in a corresponding direction between each second sub-partition.

[0012] Furthermore, in some embodiments of the present invention, the wafer tray further includes: a plurality of temperature sensors, communicatively connected to the controller, and respectively disposed in the first partition or the second partition, to obtain the first temperature of the first partition or the second temperature of the second partition, respectively.

[0013] Furthermore, in some embodiments of the present invention, the wafer tray further includes a driving circuit, which is communicatively connected to the controller, and is connected to the first and second ends of the plurality of first semiconductor coolers via wires, and provides a driving voltage of corresponding direction and / or corresponding amplitude to each of the first semiconductor coolers according to the control instructions provided by the controller.

[0014] Furthermore, in some embodiments of the present invention, the wafer tray further includes: a support handle connected to the bottom of the central region of the tray body for fixing the tray body, wherein the first end of the wire is connected to the drive circuit, and the second end extends into the tray body via the support handle to connect to the first and second ends of the plurality of first semiconductor coolers respectively.

[0015] Furthermore, in some embodiments of the present invention, the wafer tray further includes a process control interface, wherein the process control interface is communicatively connected to the controller, and the controller is further configured to: acquire, via the process control interface, a control command indicating a first target temperature of the first partition and / or a second target temperature of the second partition; provide a positive drive voltage to each of the first thermoelectric coolers in response to the first temperature being greater than the first target temperature and the second temperature being less than the second target temperature, to control each of the first thermoelectric coolers to transfer heat directionally from the first partition to the second partition; and provide a negative drive voltage to each of the first thermoelectric coolers in response to the first temperature being less than the first target temperature and the second temperature being greater than the second target temperature, to control each of the first thermoelectric coolers to transfer heat directionally from the second partition to the first partition.

[0016] Furthermore, the temperature control method for the wafer tray provided according to the second aspect of the present invention includes the following steps: obtaining a first temperature of a first partition in the central region of the wafer tray and a second temperature of a second partition in the edge region of the wafer tray; and providing a driving voltage of corresponding direction and / or corresponding amplitude to a plurality of first semiconductor coolers according to the magnitude of the first temperature and the second temperature, so as to control each of the first semiconductor coolers to perform directional heat transfer in a corresponding direction between the first partition and the second partition, wherein the first semiconductor coolers are arranged radially perpendicular to the wafer tray and distributed along the boundary of the first partition and / or the second partition.

[0017] Furthermore, the computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, the temperature control method for the wafer tray provided according to the second aspect of the present invention is implemented. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related properties or features may have the same or similar reference numerals.

[0019] Figure 1 A top view schematic diagram of a heating plate provided according to some embodiments of the present invention is shown.

[0020] Figure 2 A side view of a heating plate provided according to some embodiments of the present invention is shown.

[0021] Figure 3A schematic flowchart of a temperature control method for a wafer tray according to some embodiments of the present invention is shown.

[0022] Figure 4 A top view of the heating plate provided according to some embodiments of the present invention is shown.

[0023] Figure 5 A top view of the heating plate provided according to some embodiments of the present invention is shown. Detailed Implementation

[0024] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0025] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0026] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0027] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0028] As mentioned above, temperature control of the central and outer regions of a semiconductor heating plate is crucial in the semiconductor field. In existing heating plates, it is difficult to guarantee temperature uniformity between the central and outer regions, and the high and low temperatures of the central and outer regions of a single-zone heating plate cannot be switched. Furthermore, because the temperature boundaries of traditional dual-zone heating plates in existing technologies are not distinct and can only be achieved through heating wire layout, the adjustment range is limited. In addition, the energy in the high-temperature portion of a traditional dual-zone heating plate can only be dissipated through heat transfer; it cannot be transferred from one area requiring cooling to another area requiring heating, resulting in low energy utilization efficiency.

[0029] In order to overcome the above-mentioned defects in the prior art, the present invention provides a wafer tray, a temperature control method for a wafer tray, and a corresponding computer-readable storage medium, which can realize temperature zone control and temperature difference adjustment functions for the central and edge areas of the heating plate, improve the energy utilization efficiency of the heating plate, and expand the temperature adjustment range of each zone.

[0030] In some non-limiting embodiments, the temperature control method for the wafer tray provided in the second aspect of the present invention can be implemented based on the wafer tray provided in the first aspect of the present invention. The wafer tray may be configured with a memory and a processor. The memory includes, but is not limited to, the computer-readable storage medium provided in the third aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and configured to execute the computer instructions stored in the memory to implement the temperature control method for the wafer tray provided in the second aspect of the present invention.

[0031] Please refer to the reference. Figure 1 as well as Figure 2 . Figure 1 A top view schematic diagram of a heating plate provided according to some embodiments of the present invention is shown. Figure 2 A side view of a heating plate provided according to some embodiments of the present invention is shown.

[0032] like Figure 1As shown, the wafer tray provided in the first aspect of the present invention may include a tray body 11, a plurality of first thermoelectric coolers 12, and a controller (not shown). The tray body 11 may include a first partition 13 located in a central region and a second partition 14 located in an edge region. The plurality of first thermoelectric coolers 12 may be arranged radially perpendicular to the tray body 11 and distributed along the boundaries of the first partition 13 and the second partition 14. The controller may be connected to each of the first thermoelectric coolers 12 via one or more drive circuits and is configured to regulate the voltage output to each of the first thermoelectric coolers 12 to implement the temperature control method for the wafer tray provided in the second aspect of the present invention.

[0033] The working principle of the wafer tray described above will be described below with reference to some embodiments of temperature control methods for wafer trays. Those skilled in the art will understand that these embodiments of control methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the wafer tray. Similarly, the wafer tray is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on the entities performing the steps in the temperature control methods for these wafer trays.

[0034] Please refer to Figure 3 . Figure 3 A schematic flowchart of a temperature control method for a wafer tray according to some embodiments of the present invention is shown.

[0035] like Figure 3 As shown in step S1, during the temperature control process of the wafer tray, the controller can first acquire the first temperature of the first partition 13 and the second temperature of the second partition 14. After acquiring the first and second temperatures, as... Figure 5 As shown in step S2, the controller can provide a driving voltage of corresponding direction and corresponding amplitude to each of the first semiconductor coolers 12 according to the magnitude of the first temperature and the second temperature, so as to control each of the first semiconductor coolers 12 to perform directional heat transfer in the corresponding direction between the first partition 13 and the second partition 14.

[0036] Specifically, the aforementioned driving circuit can be connected to the first and second ends of multiple first semiconductor coolers 12 via wires, and provides a driving voltage of corresponding direction and amplitude to each first semiconductor cooler 12 according to the control commands provided by the controller. Further, regarding... Figure 2The wafer tray shown is fixedly mounted to the reaction chamber of the semiconductor processing apparatus via a support handle 15, which can be connected to the bottom of the central region of the tray body 11 for fixing the tray body. The first end of the wire can be connected to the drive circuit, and its second end can extend into the tray body 11 via the support handle 15 to connect to the first end and the second end of each first semiconductor cooler 12, respectively.

[0037] When the first temperature of the first partition 13 is greater than the second temperature of the second partition 14, the controller can provide a positive driving voltage to each of the first thermoelectric coolers 12 via the driving circuit to control the first thermoelectric coolers 12 to transfer heat directionally from the first partition 13 to the second partition 14. Conversely, when the first temperature of the first partition 13 is less than the second temperature of the second partition 14, the controller can provide a negative driving voltage to each of the first thermoelectric coolers 12 via the driving circuit to control the first thermoelectric coolers 12 to transfer heat directionally from the second partition 14 to the first partition 13. In this way, the wafer tray can be powered by the first thermoelectric coolers 12, allowing heat to be directionally transferred from the high-temperature side to the low-temperature side, thereby achieving the function of regulating the temperature difference between the center and edge areas of the wafer tray. Furthermore, when the first temperature of the first partition 13 is equal to the second temperature of the second partition 14, the controller can control the driving circuit to stop powering to each of the first thermoelectric coolers 12 to isolate the heat transfer between the first partition 13 and the second partition 14. Thus, the wafer tray provided by the present invention can control the heat transfer between the first partition 13 and the second partition 14 by adjusting the driving voltage provided to the first semiconductor cooler 12, so that heat is directionally transported from the high temperature side to the low temperature side, thereby realizing the function of adjusting the temperature difference between the central region and the edge region of the wafer tray.

[0038] Furthermore, during the process of providing driving voltage to each of the first thermoelectric coolers 12, the controller can also preferentially calculate the difference between the first temperature and the second temperature, and determine the amplitude of the driving voltage based on the difference. Then, the controller can provide a driving voltage of corresponding amplitude to each of the first thermoelectric coolers 12 via the driving circuit to control each of the first thermoelectric coolers 12 to perform quantitative heat transfer in the corresponding direction between the first partition 13 and the second partition 14. In this way, the wafer tray provided by the present invention can provide driving voltages of corresponding direction and corresponding amplitude to each of the first thermoelectric coolers 12 according to the magnitude of the first temperature and the second temperature, to control each of the first thermoelectric coolers 12 to perform directional heat transfer in the corresponding direction between the first partition 13 and the second partition 14, thereby further improving the real-time performance and stability of the temperature difference regulation function.

[0039] Furthermore, in some embodiments of the present invention, the wafer tray may also include a process adjustment interface. This process adjustment interface can be communicatively connected to the controller. Thus, during the control of the temperatures of each zone 13 and 14 of the wafer tray, the controller can also obtain control commands via the process adjustment interface indicating a first target temperature for the first zone 13 and a second target temperature for the second zone 14. Here, the first target temperature and the second target temperature can be freely set by the operator according to process requirements. When the first temperature of the first zone 13 is greater than the obtained first target temperature, and the second temperature of the second zone 14 is less than the obtained second target temperature, the controller can determine that the first zone 13 needs heat dissipation and the second zone 14 needs heating, thereby providing a positive drive voltage to each of the first semiconductor coolers 12 to control the directional heat transfer from the first zone 13 to the second zone 14. Conversely, when the first temperature of the first partition 13 is lower than the acquired first target temperature, and the second temperature of the second partition 14 is higher than the acquired second target temperature, the controller can determine that the first partition 13 needs heating and the second partition 14 needs heat dissipation. It then provides a negative drive voltage to each of the first thermoelectric coolers 12 to control the directional heat transfer from the second partition 14 to the first partition 13. Thus, the wafer tray provided by this invention can acquire control commands input by the operator through the process adjustment interface, and transfer heat from one area requiring cooling to another area requiring heating via each of the first thermoelectric coolers 12, thereby providing the function of independently controlling the temperature of each partition and improving the energy utilization efficiency of the heating plate.

[0040] Those skilled in the art will understand that Figure 1 and Figure 2 The tray body 11 shown only includes the first partition 13 located in the central area and the second partition 14 located in the edge area. It is only a non-limiting embodiment provided by the present invention, intended to clearly illustrate the main concept of the present invention and provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0041] Please refer to Figure 4 , Figure 4 A top view schematic diagram of a heating plate according to some embodiments of the present invention is shown. Figure 4 In the illustrated embodiment, the wafer tray may further include a plurality of second semiconductor coolers 41. Here, a plurality of first semiconductor coolers 12 may be distributed along the boundary of a first partition 13 located in the central region of the tray and its adjacent third partition 42. A plurality of second semiconductor coolers 41 may be distributed along the boundary of each third partition 42 and its outer adjacent partition (e.g., another layer of third partition or a second partition 14 in the edge region).

[0042] Correspondingly, when controlling the temperature of the wafer tray, the controller can further acquire the third temperature of the third partition 42, and provide a driving voltage of corresponding direction and / or corresponding amplitude to each of the first semiconductor coolers 12 and each of the second semiconductor coolers 41 according to the magnitude of the first temperature, the second temperature and the third temperature, so as to control each of the first semiconductor coolers 12 and each of the second semiconductor coolers 41 to perform directional heat transfer in the corresponding direction between the first partition, each of the third partition 42 and the second partition 14, thereby also realizing the above-mentioned temperature difference regulation and / or temperature partition control functions.

[0043] In addition, please refer to Figure 5 , Figure 5 A top view schematic diagram of a heating plate according to some embodiments of the present invention is shown. Figure 5 In the illustrated embodiment, the second partition 14 may further include a plurality of second sub-partitions 51 distributed circumferentially along the tray body 11. Correspondingly, the wafer tray may also preferably include a plurality of third semiconductor coolers 52. Here, the plurality of third semiconductor coolers 52 may be disposed circumferentially in the tray body 11 perpendicular to the tray body 11.

[0044] When controlling the temperature of the wafer tray, the controller can also acquire the fourth temperature of each second sub-zone 51 and provide a driving voltage of the corresponding direction and amplitude to each third semiconductor cooler 52 according to the magnitude of each fourth temperature, so as to control each third semiconductor cooler 52 to perform directional heat transfer in the corresponding direction between each second sub-zone 51, thereby achieving the above-mentioned temperature difference regulation and / or temperature zone control functions.

[0045] In summary, compared to existing technologies, by dividing the tray body 11 into multiple zones and setting multiple semiconductor coolers 12, 41, and 52 at the boundaries of each zone for directional heat transfer, the wafer tray provided by this invention can adjust the temperature difference based on the actual temperature of each zone, thereby better ensuring the temperature uniformity of the tray surface. Furthermore, by acquiring control commands manually input by the operator or automatically generated by the controller according to process requirements, the wafer tray provided by this invention can also autonomously switch between high and low temperatures between zones, thereby achieving temperature zone control. In addition, the wafer tray provided by this invention can also provide clear temperature control limits based on the placement of each semiconductor cooler 12, 41, and 52, and improve energy utilization, reduce power requirements, and expand the temperature adjustment range of each zone through directional heat transfer.

[0046] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0047] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer tray, characterized in that, include: The tray body includes at least a first partition located in the central area and a second partition located in the edge area; A plurality of first semiconductor coolers are disposed circumferentially within the tray body, perpendicular to the tray body, and distributed along the boundary between the first partition and the second partition; and The controller is configured to: acquire a first temperature of the first partition and a second temperature of the second partition; And based on the magnitude of the first temperature and the second temperature, a driving voltage of corresponding direction and corresponding amplitude is provided to each of the first semiconductor coolers to control each of the first semiconductor coolers to perform directional heat transfer in the corresponding direction between the first partition and the second partition.

2. The wafer tray as described in claim 1, characterized in that, The step of providing a driving voltage of corresponding direction and amplitude to each of the first thermoelectric coolers according to the magnitude of the first temperature and the second temperature, so as to control each of the first thermoelectric coolers to perform directional heat transfer in the corresponding direction between the first partition and the second partition, includes: In response to the first temperature being greater than the second temperature, a positive drive voltage is provided to each of the first thermoelectric coolers to control the directional heat transfer from the first partition to the second partition in each of the first thermoelectric coolers; In response to the first temperature being lower than the second temperature, a negative drive voltage is provided to each of the first thermoelectric coolers to control the directional heat transfer from the second zone to the first zone; and In response to the first temperature being equal to the second temperature, power supply to each of the first semiconductor coolers is stopped to isolate heat transfer between the first and second partitions.

3. The wafer tray as described in claim 2, characterized in that, The step of providing a driving voltage of corresponding direction and amplitude to each of the first thermoelectric coolers according to the magnitude of the first temperature and the second temperature, so as to control each of the first thermoelectric coolers to perform directional heat transfer in the corresponding direction between the first partition and the second partition, further includes: Calculate the difference between the first temperature and the second temperature; Based on the difference, the amplitude of the driving voltage is determined; and A drive voltage of the specified amplitude is provided to each of the first semiconductor coolers to control each of the first semiconductor coolers to perform a quantitative heat transfer in a corresponding direction between the first partition and the second partition.

4. The wafer tray as described in claim 1, characterized in that, The tray body further includes at least one third partition located between the first partition and the second partition, and the wafer tray further includes a plurality of second semiconductor coolers, wherein... The plurality of first semiconductor coolers are distributed along the boundary of the first partition and the adjacent third partition, and the plurality of second semiconductor coolers are distributed along the boundary of the third partition and the boundary of the adjacent partition outside it. The controller is further configured to: acquire a third temperature of the third partition; and provide a driving voltage of corresponding direction and corresponding amplitude to each of the first and second semiconductor coolers according to the magnitude of the first, second, and third temperatures, so as to control each of the first and second semiconductor coolers to perform directional heat transfer in the corresponding direction between the first partition, the third partition, and the second partition.

5. The wafer tray as described in claim 1, characterized in that, The second partition includes a plurality of second sub-partitions distributed circumferentially along the tray body, and the wafer tray also includes a plurality of third semiconductor coolers, wherein, The plurality of third semiconductor coolers are arranged radially within the tray body perpendicular to the tray body. The controller is further configured to: acquire a fourth temperature of each of the second sub-zones; and provide a driving voltage of corresponding direction and corresponding amplitude to each of the third semiconductor coolers according to the magnitude of each of the fourth temperatures, so as to control each of the third semiconductor coolers to perform directional heat transfer in the corresponding direction between each of the second sub-zones.

6. The wafer tray as described in claim 1, characterized in that, Also includes: Multiple temperature sensors are communicatively connected to the controller and are respectively set in the first partition and the second partition to obtain the first temperature of the first partition and the second temperature of the second partition, respectively.

7. The wafer tray as described in claim 1, characterized in that, Also includes: The driving circuit is communicatively connected to the controller and is connected to the first and second ends of the plurality of first semiconductor coolers via wires. According to the control instructions provided by the controller, it provides a driving voltage with corresponding direction and corresponding amplitude to each of the first semiconductor coolers.

8. The wafer tray as described in claim 7, characterized in that, Also includes: A support handle is connected to the bottom of the central region of the tray body for fixing the tray body in place. The first end of the wire is connected to the drive circuit, and the second end extends into the tray body via the support handle to connect to the first and second ends of the plurality of first semiconductor coolers, respectively.

9. The wafer tray as described in claim 1, characterized in that, It also includes a process control interface, wherein the process control interface is communicatively connected to the controller, and the controller is further configured to: Control commands indicating the first target temperature of the first partition and the second target temperature of the second partition are obtained via the process control interface; In response to the first temperature being greater than the first target temperature and the second temperature being less than the second target temperature, a positive drive voltage is provided to each of the first thermoelectric coolers to control the directional heat transfer from the first partition to the second partition; and In response to the first temperature being lower than the first target temperature and the second temperature being higher than the second target temperature, a negative drive voltage is provided to each of the first thermoelectric coolers to control the directional heat transfer from the second zone to the first zone.

10. A method for temperature control of a wafer tray, characterized in that, Includes the following steps: Obtain the first temperature of the first partition of the central region of the wafer tray, and the second temperature of the second partition of the edge region of the wafer tray; as well as Based on the magnitudes of the first and second temperatures, driving voltages of corresponding directions and magnitudes are provided to a plurality of first semiconductor coolers to control each first semiconductor cooler to perform directional heat transfer in a corresponding direction between the first and second partitions. The first semiconductor coolers are arranged circumferentially in the wafer tray perpendicular to the wafer tray and distributed along the boundary between the first and second partitions.

11. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the temperature control method for the wafer tray as described in claim 10 is implemented.

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