Modeling method, device, computer-readable storage medium, and processor

By simulating the random changes of molecules in photoresist through a Poisson generator, the problem of ignoring molecular randomness in nano-level lithography modeling is solved, and the accuracy and precision of the model are improved.

CN115831240BActive Publication Date: 2025-10-14GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST
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Patent Information

Application Number
CN202211573477.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-12-08
Publication Date
2025-10-14
Estimated Expiration
2042-12-08

AI Technical Summary

Technical Problem

Existing technologies ignore the randomness of molecules in nanoscale lithography modeling, resulting in inaccurate models.

Method used

A Poisson generator is used to generate the initial molecular numbers of photoacid generator, base quencher and polymer resin. The random changes of molecules are simulated by Poisson distribution. The molecular numbers are dynamically updated by combining the reaction rate and diffusion coefficient during photoresist exposure and baking.

Benefits of technology

The randomness in lithography modeling is increased, which improves the accuracy and precision of nano-level lithography models.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application provides a modeling method, device, computer readable storage medium and processor. The method comprises the following steps: determining an initial number of acid molecules according to the concentration of a photoacid generator and a Poisson generator, determining an initial number of base molecules according to the concentration of a base quencher and a Poisson generator, and determining an initial number of protected groups in a polymer resin according to the concentration of the polymer resin and a Poisson generator; in the determining step, determining the number of protected groups at the next moment according to the number of protected groups at the current moment, determining the number of acid molecules at the next moment according to the number of acid molecules at the current moment, and determining the number of base molecules at the next moment according to the number of base molecules at the current moment; the determining step is repeated for multiple times until the next moment of the current time is the ending moment of the photoresist baking. The method solves the technical problem that the randomness of molecules is ignored in the prior art when performing nanoscale photoetching modeling.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of photolithography, and in particular, to a modeling method and device, a computer readable storage medium, and a processor. BACKGROUND

[0002] Chemically amplified resist (CAR) is a kind of photoresist commonly used in photolithography, which is mainly composed of photoacid generator (PAG), polymer resin, base quencher and solvent. When the photoresist is exposed, PAG will produce an acidic product. In the subsequent post-exposure bake (PEB), PAG acts as a catalyst to catalyze the amplification reaction of the polymer resin, and the protective groups of the polymer resin undergo deprotection reaction to generate soluble hydroxyl (-OH), which is finally dissolved in the developer.

[0003] The existing technology uses a random simulation method for PEB, in which the kinetic equation is calculated using the number average of molecules, and the randomness of the initial distribution of PAG molecules and base molecules is not considered. Therefore, the randomness of the molecules is not considered.

[0004] The above information disclosed in the background section is only used to enhance the understanding of the background of the technology described herein, and therefore, the background section can contain certain information that is not known to those skilled in the art as prior art in the country. SUMMARY

[0005] The main purpose of the present application is to provide a modeling method, device, computer readable storage medium and processor to solve the problem of ignoring the randomness of molecules in the existing technology when performing nanoscale photolithography modeling.

[0006] According to an aspect of the embodiments of the present application, a modeling method is provided, comprising: determining an initial number of acid molecules according to a concentration of a photoacid generator and a Poisson generator, determining an initial number of base molecules according to a concentration of a base quencher and the Poisson generator, and determining an initial number of protecting groups in a polymer resin according to a concentration of the polymer resin and the Poisson generator, the photoacid generator, the base quencher and the polymer resin constituting a photoresist, the acid molecules being converted from the photoacid generator after the photoresist is exposed, the Poisson generator being used to generate the initial number of acid molecules according to an input first predetermined parameter related to the concentration of the photoacid generator, to generate the initial number of base molecules according to an input second predetermined parameter related to the concentration of the base quencher, and to generate the initial number of protecting groups according to an input third predetermined parameter related to the concentration of the polymer resin; determining, according to a number of molecules of the protecting groups at a current time, a number of molecules of the protecting groups at a next time, according to a number of the acid molecules at the current time, a number of the acid molecules at the next time, and according to a number of the base molecules at the current time, a number of the base molecules at the next time, in a first determining step, the current time being a starting time of a baking process of the photoresist, the number of molecules of the protecting groups at the current time being the initial number of the protecting groups, the number of the acid molecules at the current time being the initial number of the acid molecules, and the number of the base molecules at the current time being the initial number of the base molecules; repeating the determining step for multiple times until the next time of the current time is an ending time of the baking of the photoresist, wherein in each repetition, the number of molecules of the protecting groups at the next time in the last determining step is updated to be the number of molecules of the protecting groups at the current time of the current time, the number of the acid molecules at the next time in the last determining step is updated to be the number of the acid molecules at the current time of the current time, and the number of the base molecules at the next time in the last determining step is updated to be the number of the base molecules at the current time of the current time.

[0007] Optionally, the determining the initial number of acid molecules according to the concentration of the photoacid generator and the Poisson generator comprises: determining an average number of molecules of the photoacid generator per unit volume according to the concentration of the photoacid generator, determining an average number of molecules of the acid molecules according to the average number of molecules of the photoacid generator, and determining the initial number of the acid molecules according to the average number of molecules of the acid molecules and the Poisson generator; the determining the initial number of base molecules according to the concentration of the base quencher and the Poisson generator comprises: determining an average number of molecules of the base quencher per unit volume according to the concentration of the base quencher, determining the initial number of the base molecules according to the average number of molecules of the base quencher and the Poisson generator; and the determining the initial number of protecting groups according to the concentration of the polymer resin and the Poisson generator comprises: determining an average number of molecules of the protecting groups per unit volume according to the concentration of the polymer resin, and determining the initial number of the protecting groups according to the average number of molecules of the protecting groups and the Poisson generator.

[0008] Optionally, the average number of molecules of the protecting group per unit volume is determined based on the concentration of the polymer resin, including: according to the formula <n M >=c M ×NA×V, determine the average number of molecules of the protecting group per unit volume, where <n M > is the average number of molecules of the protecting group per unit volume, c M is the concentration of the polymer resin, NA is the Avogadro constant, and V is the unit volume; according to the concentration of the photoacid generator, the average number of molecules of the photoacid generator per unit volume is determined, including: according to the formula <n p >=c p ×NA×V, determine the average number of photoacid generator molecules per unit volume, where <n p > is the average number of photoacid generator molecules per unit volume, c p is the concentration of the photoacid generator; according to the concentration of the base quencher, the average number of base molecules per unit volume is determined, including: according to the formula <n Q >=c Q ×NA×V, determine the average number of base molecules per unit volume, where <n Q > is the average number of base molecules per unit volume, c Q is the concentration of the base quencher.

[0009] Optionally, determining the average molecular number of acid molecules according to the average molecular number of the photoacid generator includes: according to the formula <n H >=<n p >-e -CIt ×<n p >, determine the average number of acid molecules, where <n H > is the average molecular number of acid molecules, <n p > is the average molecular number of the photoacid generator, C is the Dier parameter of the photoresist, I is the light intensity when the photoresist is exposed, and t is the exposure time when the photoresist is exposed.

[0010] Optionally, determining the number of molecules of the protecting group at the next moment based on the number of molecules of the protecting group at the current moment includes: according to the formula Determine the number of molecules of the protecting group at the next moment, where n' M is the number of molecules of the protecting group at the next moment, n M is the number of molecules of the protecting group at the current moment, k1 is the reaction rate coefficient of the amplification reaction when the photoresist is baked, V is the unit volume, n H is the initial number of acid molecules, c(n H ,n M ) is the noise image of the acid molecule and the protecting group.

[0011] Optionally, determining the number of acid molecules at the next moment based on the number of acid molecules at the current moment includes: according to the formula Determine the number of acid molecules at the next moment, where n′ H is the number of acid molecules at the next moment, n H is the number of acid molecules at the current moment, k2 is the reaction rate coefficient when acid molecules and base molecules undergo acid-base neutralization, V is the unit volume, n Q is the initial number of base molecules, c(n H ,n M ) is the noise image of acid molecules and base molecules, D H is the diffusion coefficient of the photoacid generator.

[0012] Optionally, determining the number of alkali molecules at the next moment based on the number of alkali molecules at the current moment includes: according to the formula Determine the number of alkali molecules at the next moment, where n′ Q is the number of alkali molecules at the next moment, n Q is the number of alkali molecules at the current moment, k2 is the reaction rate coefficient when acid molecules and alkali molecules undergo acid-base neutralization, V is the unit volume, n H is the initial number of acid molecules, c(n H ,n M ) is the noise image of the acid molecule and the protecting group, D Q is the diffusion coefficient of the base quencher.

[0013] According to another aspect of an embodiment of the present invention, a modeling device is also provided, including: a first determining unit, configured to determine an initial number of acid molecules based on the concentration of a photoacid generator and a Poisson generator, determine an initial number of base molecules based on the concentration of a base quencher and the Poisson generator, and determine an initial number of protecting groups in the polymer resin based on the concentration of the polymer resin and the Poisson generator, wherein the photoacid generator, the base quencher, and the polymer resin constitute a photoresist, and the acid molecules are obtained by conversion of the photoacid generator after exposure of the photoresist, and the Poisson generator is configured to generate an initial number of acid molecules based on an input first predetermined parameter related to the concentration of the acid generator, generate an initial number of base molecules based on an input second predetermined parameter related to the concentration of the base quencher, and generate an initial number of protecting groups based on an input third predetermined parameter related to the concentration of the polymer resin; and a second determining unit, configured to determine, in a determining step, the number of protecting group molecules at a next moment based on the number of protecting group molecules at a current moment. The method comprises the following steps: determining the number of acid molecules at the next moment according to the number of acid molecules at the current moment, determining the number of alkali molecules at the next moment according to the number of alkali molecules at the current moment, wherein in the first determining step, the current moment is the starting moment of the photoresist baking process, the number of molecules of the protecting group at the current moment is the initial number of the protecting group, the number of acid molecules at the current moment is the initial number of acid molecules, and the number of alkali molecules at the current moment is the initial number of alkali molecules; and a processing unit for repeating the determining step multiple times until the next moment of the current time is the end moment of the photoresist baking, wherein, in each repetition, the number of molecules of the protecting group at the next moment in the previous determining step is updated to the number of molecules of the protecting group at the current moment of the current time, the number of acid molecules at the next moment in the previous determining step is updated to the number of acid molecules at the current moment of the current time, and the number of alkali molecules at the next moment in the previous determining step is updated to the number of alkali molecules at the current moment of the current time.

[0014] According to yet another aspect of an embodiment of the present invention, a computer-readable storage medium is provided. The computer-readable storage medium includes a stored program, wherein the program executes any one of the methods.

[0015] According to yet another aspect of an embodiment of the present invention, a processor is provided. The processor is configured to run a program, wherein any one of the methods is executed when the program is run.

[0016] In an embodiment of the present invention, a Poisson generator is added. By inputting predetermined parameters related to the molecular concentration into the Poisson generator, a randomly distributed number of molecules is generated, thereby achieving the purpose of adding randomness to the initial number of molecules of acid molecules, base molecules and protecting groups, thereby achieving the technical effect of adding randomness in EUV modeling, and further solving the technical problem of ignoring the randomness of molecules when performing nano-level lithography modeling in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings that constitute part of this application are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation on this application. In the drawings:

[0018] Figure 1 A flow chart showing an embodiment of a modeling method according to the present application is shown;

[0019] Figure 2 shows an overall flow chart of an embodiment of the modeling method according to the present application;

[0020] Figure 3 A schematic diagram of an embodiment of a modeling device according to the present application is shown. DETAILED DESCRIPTION

[0021] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0022] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0023] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0024] As mentioned in the background art, in the prior art, the randomness of molecules is ignored when performing nanoscale lithography modeling. In order to solve the above problem, in a typical embodiment of the present application, a modeling method, device, computer-readable storage medium and processor are provided.

[0025] According to an embodiment of the present application, a modeling method is provided.

[0026] Figure 1 is a flow chart of a modeling method according to an embodiment of the present application. As shown in Figure 1 the method comprises the following steps:

[0027] In step S101, the initial number of acid molecules is determined according to the concentration of a photoacid generator and a Poisson generator, the initial number of base molecules is determined according to the concentration of a base quencher and the Poisson generator, and the initial number of protecting groups in a polymer resin is determined according to the concentration of the polymer resin and the Poisson generator. The photoacid generator, the base quencher and the polymer resin constitute a photoresist. The acid molecules are converted from the photoacid generator after exposure of the photoresist. The Poisson generator is used to generate the initial number of acid molecules according to a first predetermined parameter related to the concentration of the photoacid generator, to generate the initial number of base molecules according to a second predetermined parameter related to the concentration of the base quencher, and to generate the initial number of protecting groups according to a third predetermined parameter related to the concentration of the polymer resin.

[0028] In the above step, the chemically amplified resist is a photoresist mainly composed of a photoacid generator, a water-insoluble polymer resin, a base quencher and a solvent. When the photoresist is exposed, the PAG generates an acidic product, and the photoacid generator acts as a catalyst to catalyze the amplification reaction of the polymer resin during the subsequent baking of the photoresist. The protecting groups on the polymer make it difficult to dissolve in water, and the deprotection reaction of the protecting groups generates soluble hydroxyl groups, which are finally dissolved by the solvent in development. Assuming that the number of molecules of the acid molecules, the base molecules and the protecting groups obeys Poisson distribution, the random number can be generated by the Poisson generator. The Poisson generator can be implemented in the following way. First, a parameter λ>0 is given, and a series of random numbers are generated, which obey Uniform(0,1) distribution, i.e. the random numbers are uniformly distributed in the open interval (0,1). Second, the product of the random numbers is calculated, and the program stops when the product is less than or equal to e -λ . The number of random numbers participating in the product at this time is recorded. Third, the number of random numbers participating in the product at the termination of the program obeys Poisson distribution with the parameter λ. In the above step, the randomness of the initial number of molecules can be added.

[0029] In the determining step, the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the next time point are determined according to the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the current time point. In the first determining step, the current time point is the beginning time point of the photoresist baking process, the number of the protecting groups at the current time point is the initial number of the protecting groups, the number of the acid molecules at the current time point is the initial number of the acid molecules, and the number of the base molecules at the current time point is the initial number of the base molecules.

[0030] In the determining step, the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the next time point are determined according to the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the current time point. In the first determining step, the current time point is the beginning time point of the photoresist baking process, the number of the protecting groups at the current time point is the initial number of the protecting groups, the number of the acid molecules at the current time point is the initial number of the acid molecules, and the number of the base molecules at the current time point is the initial number of the base molecules.

[0031] In the determining step, the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the next time point are determined according to the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the current time point. In the first determining step, the current time point is the beginning time point of the photoresist baking process, the number of the protecting groups at the current time point is the initial number of the protecting groups, the number of the acid molecules at the current time point is the initial number of the acid molecules, and the number of the base molecules at the current time point is the initial number of the base molecules.

[0032] In the determining step, the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the next time point are determined according to the number of the acid molecules, the number of the base molecules and the number of the protecting groups at the current time point. In the first determining step, the current time point is the beginning time point of the photoresist baking process, the number of the protecting groups at the current time point is the initial number of the protecting groups, the number of the acid molecules at the current time point is the initial number of the acid molecules, and the number of the base molecules at the current time point is the initial number of the base molecules. Figure 2 As shown in the flowchart, the model parameters including the initial PAG concentration, the protecting group concentration and the base concentration are first inputted and converted into the corresponding average molecule number; the Poisson generator is used to generate the random number of PAG molecules, protecting groups and base molecules in each unit volume V; the number of the acid molecules converted from each PAG molecule is calculated according to the probability; a time step is set, and the number of the acid molecules at the next time point is calculated using the current number of the acid molecules; the number of the protecting groups at the next time point is calculated using the current number of the protecting groups; the number of the base molecules at the next time point is calculated using the current number of the base molecules; and the determining step is repeated with the time increasing until the baking is completed.

[0033] In the embodiment of the present application, the random number of molecules is generated by inputting the predetermined parameters related to the concentration of the molecules into the Poisson generator, so as to achieve the randomness of the initial number of acid molecules, base molecules and protecting groups, thereby achieving the technical effect of adding randomness in the EUV modeling, and further solving the technical problem of ignoring the randomness of molecules in the nanometer-level photolithography modeling in the prior art.

[0034] It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although the logical order is shown in the flowchart, in some cases, the steps shown or described herein can be executed in a different order.

[0035] In a specific embodiment of the present application, the initial number of acid molecules is determined according to the concentration of the photoacid generator and the Poisson generator, including: determining the average number of molecules of the photoacid generator per unit volume according to the concentration of the photoacid generator, determining the average number of molecules of the acid according to the average number of molecules of the photoacid generator, and determining the initial number of the acid molecules according to the average number of molecules of the acid and the Poisson generator, determining the initial number of base molecules according to the concentration of the base quencher and the Poisson generator, including: determining the average number of molecules of the base per unit volume according to the concentration of the base quencher, and determining the initial number of the base molecules according to the average number of molecules of the base and the Poisson generator, and determining the initial number of the protecting groups according to the concentration of the protecting groups and the Poisson generator, including: determining the average number of molecules of the protecting groups per unit volume according to the concentration of the polymer resin, and determining the initial number of the protecting groups according to the average number of molecules of the protecting groups and the Poisson generator. In the above steps, the average number of molecules of the molecules is first determined, and then the initial number of the protecting groups, acid molecules and base molecules is determined according to the average number of molecules and the Poisson generator. The Poisson generator can further add randomness of the initial number of molecules in the EUV random model.

[0036] According to the concentration and volume of the molecules, the formula of the present application can quickly determine the average number of molecules of the protecting groups, photoacid generator and base. In the calculation process, since the photoresist is per unit volume, V can be substituted by 1 in the formula, which is more convenient for calculation. In a specific embodiment of the present application, the average number of molecules of the protecting groups per unit volume is determined according to the concentration of the polymer resin, including: determining the average number of molecules of the protecting groups per unit volume according to the formula <n M > = c M × NA × V, wherein <n M> is the average number of molecules of the protecting group per unit volume, c M is the concentration of the polymer resin, NA is the Avogadro constant, and V is the unit volume; the average number of molecules of the photoacid generator per unit volume is determined according to the concentration of the photoacid generator, including: determining the average number of molecules of the photoacid generator per unit volume according to the formula <n p > = c p x NA x V, wherein <n p > is the average number of molecules of the photoacid generator per unit volume, c p is the concentration of the photoacid generator; the average number of molecules of the base per unit volume is determined according to the concentration of the base quencher, including: determining the average number of molecules of the base per unit volume according to the formula <n Q > = c Q x NA x V, wherein <n Q > is the average number of molecules of the base per unit volume, c Q is the concentration of the base quencher.

[0037] In another specific embodiment of the present application, the average number of molecules of the acid is determined according to the average number of molecules of the photoacid generator, including: determining the average number of molecules of the acid according to the formula <n H > = <n p > - e -CIt x <n p >, wherein <n H > is the average number of molecules of the acid, <n p > is the average number of molecules of the photoacid generator, C is the Debye parameter of the photoresist, I is the light intensity when the photoresist is exposed, and t is the exposure time when the photoresist is exposed. In the above step, when the photoresist is exposed, the PAG molecules are converted into acid molecules with a certain probability, and the probability of survival of a single PAG molecule is p. Therefore, whether a PAG molecule is converted into an acid molecule can be determined by the following method: first, a random number a uniformly distributed in [0, 1] is generated. When a >= p, the PAG molecule is converted into an acid molecule, and when a < p, the PAG is not converted into an acid molecule. Assuming that the conversion rate between the PAG molecule and the acid molecule is 1, the number of acid molecules can be obtained by subtracting the number of surviving PAG molecules from the initial number of PAG molecules, i.e. the acid latent image in the photoresist. Wherein I is the light intensity when the photoresist is exposed under the condition of continuous approximation. The above step further considers the conversion probability of PAG molecules to acid molecules, which can further increase the accuracy of the average number of molecules calculation.

[0038] The present application can further consider the reaction rate of the amplified reaction and add the reaction rate coefficient of the amplified reaction into the formula, which can quickly determine the number of molecules of the protecting group at the next moment and further improve the accuracy of the calculation of the number of acid molecules. In another specific embodiment of the present application, according to the number of molecules of the protecting group at the current moment, the number of molecules of the protecting group at the next moment is determined, including: according to the formula Determine the number of molecules of the above-mentioned protecting group at the next moment, where n' M is the number of molecules of the above-mentioned protecting group at the next moment, n M is the number of molecules of the above-mentioned protecting group at the current moment, k1 is the reaction rate coefficient of the amplification reaction when the above-mentioned photoresist is baked, V is the unit volume, n H is the initial number of the above acid molecules, c(n H ,n M ) is the noise image of the acid molecule and the protecting group. In the above steps, it is assumed that the reaction rate coefficient of the amplification reaction is a constant. In practical applications, those skilled in the art can adjust the reaction rate coefficient according to actual conditions.

[0039] In another specific embodiment of the present application, the number of the acid molecules at the next moment is determined according to the number of the acid molecules at the current moment, including: according to the formula Determine the number of the above acid molecules at the next moment, where n' H is the number of the acid molecules at the next moment, n H is the number of the acid molecules at the current moment, k2 is the reaction rate coefficient when the acid molecules and the base molecules undergo acid-base neutralization, V is the unit volume, n Q is the initial number of the above-mentioned base molecules, c(n H ,n M ) is the noise image of the acid molecule and the base molecule, D H is the diffusion coefficient of the photoacid generator. In the above steps, it is assumed that the reaction rate coefficient of the acid-base neutralization reaction and the diffusion coefficient of the photoacid generator are constants. In practical applications, those skilled in the art can adjust the reaction rate coefficient and the diffusion coefficient of the photoacid generator according to actual conditions. This formula can further take into account the reaction rate of the acid-base neutralization reaction and the diffusion of the photoacid generator. By adding the reaction rate coefficient of the acid-base neutralization reaction and the diffusion coefficient of the photoacid generator to the formula, the number of acid molecules at the next moment can be quickly determined, and the accuracy of the calculation of the number of acid molecules can also be further improved.

[0040] In another specific embodiment of the present application, the number of the alkali molecules at the next moment is determined according to the number of the alkali molecules at the current moment, including: according to the formula determining the number of the base molecules at the next time point, wherein n' = n + k2k2Vn(n - n0) + Dn(n - n0) - k2k2Vn(n - n0)exp(-k2k2Vn(n - n0) + Dn(n - n0)) / (1 + k2k2Vn(n - n0) + Dn(n - n0)) Q n' = n + k2k2Vn(n - n0) + Dn(n - n0) - k2k2Vn(n - n0)exp(-k2k2Vn(n - n0) + Dn(n - n0)) / (1 + k2k2Vn(n - n0) + Dn(n - n0)) Q k2 is a reaction rate coefficient of the acid molecules and the base molecules in the acid-base neutralization, V is a unit volume, n is the number of the acid molecules at the current time point, k2 is the reaction rate coefficient of the acid molecules and the base molecules in the acid-base neutralization, V is the unit volume, n is the number of the acid molecules at the current time point, k2 is the reaction rate coefficient of the acid molecules and the base molecules in the acid-base neutralization, and V is the unit volume. H n0 is the initial number of the acid molecules, c(n H , n M ) is a noise image of the acid molecules and the protecting groups, D Q is the diffusion coefficient of the base quencher. In the above step, it is assumed that the reaction rate coefficient of the acid-base neutralization and the diffusion coefficient of the base quencher are constant, and in actual applications, the reaction rate coefficient and the diffusion coefficient of the base quencher can be adjusted by the person skilled in the art according to the actual situation. The formula can further consider the reaction rate of the acid-base neutralization reaction and the diffusion of the base quencher, and add the reaction rate coefficient of the acid-base neutralization reaction and the diffusion coefficient of the base quencher to the formula, so that the number of the base molecules at the next time point can be quickly determined, and the accuracy of the calculation of the number of the base molecules can be further improved.

[0041] The embodiment of the present application further provides a modeling device. It should be noted that the modeling device of the embodiment of the present application can be used to execute the modeling method provided by the embodiment of the present application. The modeling device provided by the embodiment of the present application is introduced as follows.

[0042] Figure 3 is a schematic diagram of the modeling device according to the embodiment of the present application. As shown in Figure 3 , the device comprises:

[0043] The first determining unit 10 is configured to determine the initial number of the acid molecules according to the concentration of the photoacid generator and a Poisson generator, determine the initial number of the base molecules according to the concentration of the base quencher and the Poisson generator, and determine the initial number of the protecting groups in the polymer resin according to the concentration of the polymer resin and the Poisson generator. The photoacid generator, the base quencher and the polymer resin constitute a photoresist. The acid molecules are converted from the photoacid generator after the photoresist is exposed. The Poisson generator is configured to generate the initial number of the acid molecules according to a first predetermined parameter related to the concentration of the photoacid generator, generate the initial number of the base molecules according to a second predetermined parameter related to the concentration of the base quencher, and generate the initial number of the protecting groups according to a third predetermined parameter related to the concentration of the polymer resin.

[0044] The chemical amplification resist is a photoresist, which is mainly composed of a photoacid generator, a water-insoluble polymer resin, a base quencher, and a solvent. When the photoresist is exposed to light, the PAG generates an acidic product. During the subsequent baking of the photoresist, the photoacid generator acts as a catalyst to catalyze the amplification reaction of the polymer resin. Due to the presence of the protecting group on the polymer, which makes it difficult to dissolve in water, the protecting group undergoes a deprotection reaction to generate a soluble hydroxyl group, which is finally dissolved in the developer by the solvent. Assuming that the number of acid molecules, base molecules, and protecting group molecules obeys the Poisson distribution, a random number can be generated by the Poisson generator. The Poisson generator can be implemented in the following way: first, given a parameter λ > 0, generate a series of random numbers, which are uniformly distributed in the open interval (0, 1). Second, find the product of the random numbers. When the product is less than or equal to e -λ , the program stops. Note the number of random numbers involved in the product at this time. Third, the number of random numbers involved in the product at the end of the program minus one obeys the Poisson distribution with parameter λ. In the above device, randomness of the initial number of molecules can be added.

[0045] The second determination unit 20 is configured to determine the number of protecting group molecules at the next time point based on the number of protecting group molecules at the current time point, determine the number of acid molecules at the next time point based on the number of acid molecules at the current time point, and determine the number of base molecules at the next time point based on the number of base molecules at the current time point. In the first determination step, the current time point is the start time of the photoresist baking process, the number of protecting group molecules at the current time point is the initial number of protecting group molecules, the number of acid molecules at the current time point is the initial number of acid molecules, and the number of base molecules at the current time point is the initial number of base molecules.

[0046] In the above device, the number of acid molecules, base molecules, and protecting group molecules at the next time point is determined based on the number of acid molecules, base molecules, and protecting group molecules at the current time point, which can simulate the random behavior of the photoresist during exposure and baking, and further add randomness to the EUV modeling.

[0047] The processing unit 30 is configured to repeat the above determination step multiple times until the next time point of the current time is the end time point of the photoresist baking, wherein in each repetition, the number of the protecting groups at the next time point in the last determination step is updated to the number of the protecting groups at the current time of the current time, the number of the acid molecules at the next time point in the last determination step is updated to the number of the acid molecules at the current time of the current time, and the number of the base molecules at the next time point in the last determination step is updated to the number of the base molecules at the current time of the current time.

[0048] In the above device, the number of the molecules at the next time point in the last device is updated to the number of the molecules at the current time of the current time, and the iteration is repeated as time increases until the end of the photoresist baking process, so that the number of the acid molecules, the number of the base molecules and the number of the protecting groups can be determined, and the acid latent image and the latent image formed by the protecting groups are output. The overall flowchart of the method is shown in Figure 2 As shown, first, the model parameters including the initial PAG concentration, the protecting group concentration and the base concentration are input and converted into the corresponding average number of molecules; the Poisson generator is used to generate the random number of PAG molecules, protecting groups and base molecules in each unit volume V; the number of acid molecules converted from each PAG molecule is calculated according to the probability; a time step is set, and the number of acid molecules at the next time point is calculated using the current number of acid molecules; the number of protecting groups at the next time point is calculated using the current number of protecting groups; the number of base molecules at the next time point is calculated using the current number of base molecules; and the above determination step is repeated as time increases until the end of the baking.

[0049] In the embodiment of the present application, the Poisson generator is increased, the predetermined parameters related to the concentration of molecules are input into the Poisson generator to generate the random number of molecules, the randomness of the initial number of acid molecules, base molecules and protecting groups is achieved, the technical effect of adding randomness in EUV modeling is achieved, and the technical problem of ignoring the randomness of molecules in the existing technology when performing nanoscale lithography modeling is solved.

[0050] In a specific embodiment of the present application, the initial number of acid molecules is determined according to the concentration of the photoacid generator and the Poisson generator, including: determining the average number of molecules of the photoacid generator per unit volume according to the concentration of the photoacid generator, determining the average number of molecules of the acid molecules according to the average number of molecules of the photoacid generator, and determining the initial number of the acid molecules according to the average number of molecules of the acid molecules and the Poisson generator, the initial number of base molecules is determined according to the concentration of the base quencher and the Poisson generator, including: determining the average number of molecules of the base molecules per unit volume according to the concentration of the base quencher, and determining the initial number of the base molecules according to the average number of molecules of the base molecules and the Poisson generator, and the initial number of the protecting groups is determined according to the concentration of the polymer resin and the Poisson generator, including: determining the average number of molecules of the protecting groups per unit volume according to the concentration of the polymer resin, and determining the initial number of the protecting groups according to the average number of molecules of the protecting groups and the Poisson generator. In the device, the average number of molecules of the molecules is determined first, and then the initial number of the protecting groups, the acid molecules and the base molecules is determined according to the average number of molecules and the Poisson generator. The Poisson generator can further add randomness of the initial number of molecules in the EUV random model.

[0051] According to the concentration and the volume of the molecules, the formula of the present application can quickly determine the average number of molecules of the protecting groups, the photoacid generator and the base molecules. In the calculation process, since the photoresist is per unit volume, V can be substituted by 1 in the formula, which is more convenient for calculation. In a specific embodiment of the present application, the average number of molecules of the protecting groups per unit volume is determined according to the concentration of the polymer resin, including: determining the average number of molecules of the protecting groups per unit volume according to the formula <n M > = c M × NA × V, wherein <n M > is the average number of molecules of the protecting groups per unit volume, c M is the concentration of the polymer resin, NA is the Avogadro constant, and V is the unit volume; the average number of molecules of the photoacid generator per unit volume is determined according to the concentration of the photoacid generator, including: determining the average number of molecules of the photoacid generator per unit volume according to the formula <n p > = c p × NA × V, wherein <n p > is the average number of molecules of the photoacid generator per unit volume, and c p is the concentration of the photoacid generator; and the average number of molecules of the base molecules per unit volume is determined according to the concentration of the base quencher, including: determining the average number of molecules of the base molecules per unit volume according to the formula <n Q > = c Qdetermining the average number of molecules of the acid molecules according to the average number of molecules of the photoacid generator, comprising: determining the average number of molecules of the acid molecules according to the formula <n Q is the average number of molecules of the base molecules in the unit volume, and c Q is the concentration of the base quencher.

[0052] In another specific embodiment of the present application, the average number of molecules of the acid molecules is determined according to the average number of molecules of the photoacid generator, comprising: determining the average number of molecules of the acid molecules according to the formula <n H > = <n p > - e -CIt × <n p >, wherein <n H > is the average number of molecules of the acid molecules, <n p > is the average number of molecules of the photoacid generator, and C is the Debye parameter of the photoresist. In the device, when the photoresist is exposed to light, the PAG molecules are converted into acid molecules with a certain probability, and the survival probability of a single PAG molecule is p. Therefore, whether the PAG molecules are converted into acid molecules can be determined by the following method: first, a random number a uniformly distributed in [0, 1] is generated. When a >= p, the PAG molecules are converted into acid molecules, and when a < p, the PAG molecules are not converted into acid molecules. Assuming that the conversion rate between the PAG molecules and the acid molecules is 1, the number of acid molecules can be obtained by subtracting the survival number of PAG molecules from the initial number of PAG molecules, that is, the acid latent image in the photoresist. Wherein I is the light intensity of the photoresist under the condition of continuous approximation. The device further considers the conversion probability of the PAG molecules to the acid molecules, which can further increase the accuracy of the average number of molecules calculation.

[0053] In another specific embodiment of the present application, the number of molecules of the protecting group at the next moment is determined according to the number of molecules of the protecting group at the current moment, comprising: determining the number of molecules of the protecting group at the next moment according to the formula , wherein n' M is the number of molecules of the protecting group at the next moment, n M is the number of molecules of the protecting group at the current moment, k1 is the reaction rate coefficient of the amplification reaction when the photoresist is baked, V is the unit volume, n H is the initial number of acid molecules, and c(n H , n M) is the noise image of the acid molecule and the protecting group. In the device, the reaction rate coefficient of the amplification reaction is assumed to be constant, and in actual applications, those skilled in the art can adjust the reaction rate coefficient according to the actual situation. The formula can further consider the reaction rate of the amplification reaction, and add the reaction rate coefficient of the amplification reaction to the formula, which can quickly determine the number of protecting group molecules at the next moment, and can further improve the accuracy of the calculation of the number of acid molecules.

[0054] The application can further consider the reaction rate of the acid-base neutralization reaction and the diffusion of the photoacid generator, and add the reaction rate coefficient of the acid-base neutralization reaction and the diffusion coefficient of the photoacid generator to the formula, which can quickly determine the number of acid molecules at the next moment, and can further improve the accuracy of the calculation of the number of acid molecules. In another specific embodiment of the application, the number of acid molecules at the next moment is determined according to the number of acid molecules at the current moment, comprising: determining the number of acid molecules at the next moment, wherein n' H is the number of acid molecules at the next moment, n H is the number of acid molecules at the current moment, k2 is the reaction rate coefficient of the acid-base neutralization reaction of the acid molecule and the base molecule, V is the unit volume, n Q is the initial number of acid molecules, c(n H , n M ) is the noise image of the acid molecule and the base molecule, D H is the diffusion coefficient of the photoacid generator. In the device, the reaction rate coefficient of the acid-base neutralization reaction and the diffusion coefficient of the photoacid generator are assumed to be constant, and in actual applications, those skilled in the art can adjust the reaction rate coefficient and the diffusion coefficient of the photoacid generator according to the actual situation.

[0055] In another specific embodiment of the application, the number of base molecules at the next moment is determined according to the number of base molecules at the current moment, comprising: determining the number of base molecules at the next moment, wherein n' Q is the number of base molecules at the next moment, n Q is the number of base molecules at the current moment, k2 is the reaction rate coefficient of the acid-base neutralization reaction of the acid molecule and the base molecule, V is the unit volume, n H is the initial number of acid molecules, c(n H , n M ) is the noise image of the acid molecule and the protecting group, D QThe diffusion coefficient of the base quencher described above. In the device described above, it is assumed that the reaction rate coefficient of acid-base neutralization and the diffusion coefficient of the base quencher are constant, and in actual applications, those skilled in the art can adjust the reaction rate coefficient and the diffusion coefficient of the base quencher according to the actual situation. The formula can further consider the reaction rate of the acid-base neutralization reaction and the diffusion of the base quencher, and add the reaction rate coefficient of the acid-base neutralization reaction and the diffusion coefficient of the base quencher to the formula, which can quickly determine the number of base molecules at the next moment, and can further improve the accuracy of the calculation of the number of base molecules.

[0056] The modeling device described above includes a processor and a memory, and the first determining unit, the second determining unit, and the processing unit are all stored in the memory as program units, and the corresponding functions are realized by the processor executing the program units stored in the memory.

[0057] The processor includes a core, and the core retrieves the corresponding program unit from the memory. The core can be set to one or more, and the randomness of the model can be increased by adjusting the core parameters.

[0058] The memory can include non-permanent memory in a computer readable medium, random access memory (RAM) and / or non-volatile memory such as read-only memory (ROM) or flash memory (flash RAM), and the memory includes at least one memory chip.

[0059] The embodiment of the present application provides a storage medium, which stores a program, and the program is executed by a processor to realize the modeling method.

[0060] The embodiment of the present application provides a processor, which is used to run a program, and the program is executed to realize the modeling method.

[0061] The embodiment of the present application provides a device, which includes a processor, a memory, and a program stored in the memory and executable on the processor, and the processor realizes at least the following steps when executing the program:

[0062] In step S101, the initial number of acid molecules is determined according to the concentration of a photoacid generator and a Poisson generator, the initial number of base molecules is determined according to the concentration of a base quencher and the Poisson generator, and the initial number of protecting groups in a polymer resin is determined according to the concentration of the polymer resin and the Poisson generator, the photoacid generator, the base quencher and the polymer resin constitute a photoresist, the acid molecules are converted from the photoacid generator after the photoresist is exposed, the Poisson generator is used to generate the initial number of acid molecules according to a first predetermined parameter related to the concentration of the photoacid generator, to generate the initial number of base molecules according to a second predetermined parameter related to the concentration of the base quencher, and to generate the initial number of protecting groups according to a third predetermined parameter related to the concentration of the polymer resin;

[0063] In step S102, the number of protecting groups at the next time is determined according to the number of protecting groups at the current time, the number of acid molecules at the next time is determined according to the number of acid molecules at the current time, and the number of base molecules at the next time is determined according to the number of base molecules at the current time, in the first determination step, the current time is the starting time of the photoresist baking process, the number of protecting groups at the current time is the initial number of protecting groups, the number of acid molecules at the current time is the initial number of acid molecules, and the number of base molecules at the current time is the initial number of base molecules.

[0064] In step S103, the determination step is repeated multiple times until the next time of the current time is the ending time of the photoresist baking process, in each repetition, the number of protecting groups at the next time in the last determination step is updated to the number of protecting groups at the current time of the current time, the number of acid molecules at the next time in the last determination step is updated to the number of acid molecules at the current time of the current time, and the number of base molecules at the next time in the last determination step is updated to the number of base molecules at the current time of the current time.

[0065] The device herein can be a server, a PC, a PAD, a mobile phone, etc.

[0066] The application further provides a computer program product adapted to execute the program of the method steps as follows when executed on a data processing device:

[0067] In step S101, the initial number of acid molecules is determined according to the concentration of a photoacid generator and a Poisson generator, the initial number of base molecules is determined according to the concentration of a base quencher and the Poisson generator, and the initial number of protecting groups in a polymer resin is determined according to the concentration of the polymer resin and the Poisson generator, the photoacid generator, the base quencher, and the polymer resin constitute a photoresist, the acid molecules are converted from the photoacid generator after the photoresist is exposed, the Poisson generator is used to generate the initial number of acid molecules according to a first predetermined parameter related to the concentration of the photoacid generator, to generate the initial number of base molecules according to a second predetermined parameter related to the concentration of the base quencher, and to generate the initial number of protecting groups according to a third predetermined parameter related to the concentration of the polymer resin;

[0068] In step S102, the number of protecting groups at the next time is determined according to the number of protecting groups at the current time, the number of acid molecules at the next time is determined according to the number of acid molecules at the current time, and the number of base molecules at the next time is determined according to the number of base molecules at the current time, in the first determination step, the current time is the start time of the photoresist baking process, the number of protecting groups at the current time is the initial number of protecting groups, the number of acid molecules at the current time is the initial number of acid molecules, and the number of base molecules at the current time is the initial number of base molecules.

[0069] In step S103, the determination step is repeated multiple times until the next time of the current time is the end time of the photoresist baking process, in each repetition, the number of protecting groups at the next time in the last determination step is updated to the number of protecting groups at the current time of the current time, the number of acid molecules at the next time in the last determination step is updated to the number of acid molecules at the current time of the current time, and the number of base molecules at the next time in the last determination step is updated to the number of base molecules at the current time of the current time.

[0070] In the above embodiments of the present application, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0071] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. Among them, the device embodiments described above are only exemplary. For example, the division of the above-mentioned units can be a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of units or modules, which can be electrical or other forms.

[0072] The units described above as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0073] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0074] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server or network device, etc.) to execute all or part of the steps of the above-mentioned methods of each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk.

[0075] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0076] 1) In the modeling method of the present application, first, the initial number of acid molecules is determined according to the concentration of the photoacid generator and the Poisson generator, the initial number of base molecules is determined according to the concentration of the base quencher and the Poisson generator, and the initial number of protecting groups in the polymer resin is determined according to the concentration of the polymer resin and the Poisson generator; then, the determining step is determined according to the number of protecting group molecules at the current time, the number of protecting group molecules at the next time, the number of acid molecules at the current time, the number of acid molecules at the next time, and the number of base molecules at the current time; finally, the determining step is repeated several times until the next time of the current time is the end time of the photoresist baking, wherein in each repetition, the number of protecting group molecules at the next time in the last determining step is updated to the number of protecting group molecules at the current time of the current time, the number of acid molecules at the next time in the last determining step is updated to the number of acid molecules at the current time of the current time, and the number of base molecules at the next time in the last determining step is updated to the number of base molecules at the current time of the current time. By increasing the Poisson generator, the random distribution number of molecules is generated by inputting the predetermined parameters related to the molecular concentration to the Poisson generator, which achieves the purpose of adding the randomness of the initial number of acid molecules, base molecules and protecting groups, thereby realizing the technical effect of adding randomness in EUV modeling, and further solving the technical problem of ignoring the randomness of molecules in the existing technology when performing nanoscale lithography modeling.

[0077] 2)、the modeling device of the application, the first determination unit is used for determining the initial number of acid molecules according to the concentration of photoacid generator and Poisson generator, determining the initial number of base molecules according to the concentration of base quencher and Poisson generator, and determining the initial number of protecting groups in polymer resin according to the concentration of polymer resin and Poisson generator; the second determination unit is used for determining the number of protecting groups at the next moment according to the number of protecting groups at the current moment, determining the number of acid molecules at the next moment according to the number of acid molecules at the current moment, and determining the number of base molecules at the next moment according to the number of base molecules at the current moment; the processing unit is used for repeating the determination step for multiple times until the next moment of the current time is the end time of photoresist baking, wherein in the process of each repetition, the number of protecting groups at the next moment in the last determination step is updated to the number of protecting groups at the current moment of the current time, the number of acid molecules at the next moment in the last determination step is updated to the number of acid molecules at the current moment of the current time, and the number of base molecules at the next moment in the last determination step is updated to the number of base molecules at the current moment of the current time. By adding Poisson generator, the random distribution number of molecules is generated by inputting the predetermined parameters related to the concentration of molecules to Poisson generator, the purpose of adding randomness of the initial number of acid molecules, base molecules and protecting groups is achieved, the technical effect of adding randomness in EUV modeling is realized, and the technical problem of ignoring the randomness of molecules in the existing technology when performing nanoscale lithography modeling is solved.

[0078] The above only describes the preferred embodiments of the application and is not intended to limit the application. Those skilled in the art can make various changes and modifications to the application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the application shall be included in the protection scope of the application.

Claims

1. A modeling method, characterized in that: include: determining an initial number of acid molecules according to a concentration of a photoacid generator and a Poisson generator, determining an initial number of base molecules according to a concentration of a base quencher and the Poisson generator, and determining an initial number of protecting groups in the polymer resin according to a concentration of a polymer resin and the Poisson generator, wherein the photoacid generator, the base quencher, and the polymer resin constitute a photoresist, the acid molecules being converted by the photoacid generator after exposure of the photoresist, and the Poisson generator being configured to generate an initial number of acid molecules according to an input first predetermined parameter related to the concentration of the acid generator, generate an initial number of base molecules according to an input second predetermined parameter related to the concentration of the base quencher, and generate an initial number of protecting groups according to an input third predetermined parameter related to the concentration of the polymer resin; a determining step, determining the number of molecules of the protecting group at a next moment according to the number of molecules of the protecting group at a current moment, determining the number of acid molecules at a next moment according to the number of acid molecules at a current moment, and determining the number of base molecules at a next moment according to the number of base molecules at a current moment, wherein in the first determining step, the current moment is the starting moment of the photoresist baking process, the number of molecules of the protecting group at the current moment is the initial number of the protecting group, the number of acid molecules at the current moment is the initial number of the acid molecules, and the number of base molecules at the current moment is the initial number of the base molecules; Repeat the determining step multiple times until the next moment of the current time is the end moment of the photoresist baking, wherein, in each repetition, the number of molecules of the protecting group at the next moment in the previous determining step is updated to the number of molecules of the protecting group at the current moment of the current time, the number of the acid molecules at the next moment in the previous determining step is updated to the number of acid molecules at the current moment of the current time, and the number of the base molecules at the next moment in the previous determining step is updated to the number of base molecules at the current moment of the current time.

2. The method according to claim 1, characterized in that Determining an initial number of acid molecules according to the concentration of a photoacid generator and a Poisson generator, comprising: determining an average number of photoacid generator molecules per unit volume according to the concentration of the photoacid generator, determining an average number of acid molecules according to the average number of photoacid generator molecules, and determining an initial number of acid molecules according to the average number of acid molecules and the Poisson generator. Determining an initial number of base molecules according to the concentration of the base quencher and the Poisson generator includes: determining an average number of base molecules per unit volume according to the concentration of the base quencher, and determining the initial number of base molecules according to the average number of base molecules and the Poisson generator. Determining the initial number of the protecting groups according to the concentration of the protecting groups and the Poisson generator includes: determining the average molecular number of the protecting groups per unit volume according to the concentration of the polymer resin, and determining the initial number of the protecting groups according to the average molecular number of the protecting groups and the Poisson generator.

3. The method according to claim 2, characterized in that Determining the average number of molecules of the protecting group per unit volume according to the concentration of the polymer resin comprises: according to the formula <n M >=c M ×NA×V, determine the average number of molecules of the protecting group per unit volume, where <n M > is the average number of molecules of the protecting group per unit volume, c M is the concentration of the polymer resin, NA is Avogadro's constant, and V is the unit volume; Determining the average number of molecules of the photoacid generator per unit volume according to the concentration of the photoacid generator comprises: According to the formula <n p >=c p ×NA×V, determine the average number of molecules of the photoacid generator per unit volume, where <n p > is the average molecular number of the photoacid generator per unit volume, c p is the concentration of the photoacid generator; according to the concentration of the base quencher, the average number of base molecules per unit volume is determined, including: according to the formula <n Q >=c Q ×NA×V, determine the average number of base molecules per unit volume, where <n Q > is the average number of the base molecules per unit volume, c Q is the concentration of the base quencher.

4. The method according to claim 2, characterized in that Determining the average molecular number of the acid molecules according to the average molecular number of the photoacid generator comprises: According to the formula <n H >=<n p >-e -CIt ×<n p >, determine the average molecular number of the acid molecules, wherein, <n H > is the average molecular number of the acid molecules, <n p > is the average molecular number of the photoacid generator, C is the Dier parameter of the photoresist, I is the light intensity when the photoresist is exposed, and t is the exposure time when the photoresist is exposed.

5. The method according to claim 1, wherein Determining the number of molecules of the protecting group at a next moment according to the number of molecules of the protecting group at a current moment comprises: According to the formula Determine the number of molecules of the protecting group at the next moment, where n' M is the number of molecules of the protective group at the next moment, n M is the number of molecules of the protecting group at the current moment, k1 is the reaction rate coefficient of the amplification reaction when the photoresist is baked, V is the unit volume, n H is the initial number of the acid molecules, c(n H ,n M ) is the noise image of the acid molecule and the protecting group.

6. The method according to claim 1, characterized in that Determining the number of the acid molecules at a next moment according to the number of the acid molecules at a current moment includes: According to the formula Determine the number of acid molecules at the next moment, where n' H is the number of acid molecules at the next moment, n H is the number of the acid molecules at the current moment, k2 is the reaction rate coefficient when the acid molecules and the base molecules undergo acid-base neutralization, V is the unit volume, n Q is the initial number of the base molecules, c(n H ,n M ) is the noise image of the acid molecule and the base molecule, D H is the diffusion coefficient of the photoacid generator.

7. The method according to claim 1, characterized in that Determining the number of the alkali molecules at a next moment according to the number of the alkali molecules at a current moment includes: According to the formula Determine the number of base molecules at the next moment, where n' Q is the number of base molecules at the next moment, n Q is the number of the base molecules at the current moment, k2 is the reaction rate coefficient when the acid molecules and the base molecules undergo acid-base neutralization, V is the unit volume, n H is the initial number of the acid molecules, c(n H ,n M ) is the noise image of the acid molecule and the protecting group, D Q is the diffusion coefficient of the base quencher.

8. A modeling device, characterized in that: include: a first determining unit, configured to determine an initial number of acid molecules according to a concentration of a photoacid generator and a Poisson generator, determine an initial number of base molecules according to a concentration of a base quencher and the Poisson generator, and determine an initial number of protecting groups in the polymer resin according to a concentration of a polymer resin and the Poisson generator, wherein the photoacid generator, the base quencher, and the polymer resin constitute a photoresist, the acid molecules being converted by the photoacid generator after exposure of the photoresist, and the Poisson generator being configured to generate the initial number of acid molecules according to an input first predetermined parameter related to the concentration of the acid generator, generate the initial number of base molecules according to an input second predetermined parameter related to the concentration of the base quencher, and generate the initial number of protecting groups according to an input third predetermined parameter related to the concentration of the polymer resin; a second determining unit, configured to determine, in a determining step, the number of molecules of the protecting group at a next moment according to the number of molecules of the protecting group at a current moment, the number of acid molecules at a next moment according to the number of acid molecules at a current moment, and the number of base molecules at a next moment according to the number of base molecules at a current moment, wherein in the first determining step, the current moment is the start moment of the photoresist baking process, the number of molecules of the protecting group at the current moment is the initial number of the protecting group, the number of acid molecules at the current moment is the initial number of the acid molecules, and the number of base molecules at the current moment is the initial number of the base molecules; A processing unit is used to repeat the determining step multiple times until the next moment of the current time is the end moment of the photoresist baking, wherein, during each repetition, the number of molecules of the protecting group at the next moment in the previous determining step is updated to the number of molecules of the protecting group at the current moment of the current time, the number of the acid molecules at the next moment in the previous determining step is updated to the number of acid molecules at the current moment of the current time, and the number of the base molecules at the next moment in the previous determining step is updated to the number of base molecules at the current moment of the current time.

9. A computer-readable storage medium, characterized in that The computer-readable storage medium includes a stored program, wherein the program executes the method according to any one of claims 1 to 7.

10. A processor, characterized in that: The processor is configured to run a program, wherein the program executes the method according to any one of claims 1 to 7 when running.

Citation Information

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