Simulation method for ionization-displacement synergistic effect at different depths in transistor oxide layer

Abstract

The present invention provides a method for simulating the ionization-displacement synergistic effect at different depths in a transistor oxide layer. The method comprises: setting a preset initial concentration of oxygen vacancy defects at different depths in the bipolar transistor oxide layer, and determining the number of electron-hole pairs in the bipolar transistor oxide layer based on an electron-hole pair calculation model; simulating the ionization-displacement synergistic effect at different depths based on oxygen vacancy defects and electron-hole pairs based on a preset defect evolution process, and determining the hole concentrations at different depths based on the simulation results; and comparing and analyzing the hole concentrations at different depths to determine the relationship between the ionization-displacement synergistic effect at different depths in the bipolar transistor oxide layer. The present invention enables the simulation and study of the ionization-displacement synergistic effect at different depths in the transistor oxide layer. The provided simulation method has a convenient data acquisition process, does not introduce interference factors into the acquired data, and provides accurate and reliable analysis results.

Description

Technical Field

[0001] The present invention relates to the technical field of transistors, and in particular to a method for simulating ionization-displacement synergistic effects at different depths of a transistor oxide layer. Background Art

[0002] Various high-energy charged particles in space can affect the performance of spacecraft in orbit, particularly electronic components during their service life. High-energy charged particles include electrons, protons, and heavy ions. Damage to electronic components primarily stems from ionizing radiation effects, displacement radiation effects, and their interactions. In the harsh space environment, different charged particles can cause varying degrees of damage to electronic components. These damages can range from device degradation to complete spacecraft failure. Therefore, research on the mechanisms of radiation damage to electronic components is crucial.

[0003] Bipolar transistors and circuits have been widely used in space environments and spacecraft due to their unique performance indicators and excellent performance. However, bipolar process transistors and circuits are sensitive to both ionization and displacement effects. With the continuous progress of electronic device failure analysis in space environments, researchers have gradually realized that displacement and ionization effect analysis based on single proton or electron irradiation cannot meet the operating requirements of electronic devices in actual space environments. This is because most ions in the space environment (such as protons and electrons) can produce both ionizing radiation effects and displacement radiation effects.

[0004] Typically, the ionizing radiation effect of bipolar transistors refers primarily to the generation of oxide charges in the SiO2 oxide layer and interface state traps at the Si / SiO2 interface caused by the incident charged particles. The displacement radiation effect of bipolar transistors refers primarily to the generation of vacancies and interstitial atoms in silicon after the incident charged particles. Current analyses of the synergistic effects of bipolar transistors mostly consider the interaction between the ionization effect in the oxide layer and the displacement effect in silicon. However, charged particle incident damage also produces displacement damage in the oxide layer, and the analysis results ignore the interaction between displacement damage and ionization damage in the oxide layer. Furthermore, due to the complexity of the space environment, particles of different energies can interact with displacement damage and ionization damage at different depths in the oxide layer. The analysis results cannot determine the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer. Summary of the Invention

[0005] The problem solved by the present invention is how to analyze and study the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer of a bipolar transistor.

[0006] To solve the above problems, the present invention provides a method, device and storage medium for simulating the ionization-displacement synergistic effect at different depths of a transistor oxide layer.

[0007] In a first aspect, the present invention provides a method for simulating the ionization-displacement synergistic effect at different depths of a transistor oxide layer, comprising:

[0008] Setting oxygen vacancy defects of preset initial concentrations at different depths of the bipolar transistor oxide layer, and determining the number of electron-hole pairs in the bipolar transistor oxide layer according to an electron-hole pair calculation model;

[0009] Based on a preset defect evolution process, simulating the ionization-displacement synergistic effect of the oxygen vacancy defect and the electron-hole pair at the different depths, and determining the hole concentration at the different depths according to the simulation results;

[0010] The hole concentrations at the different depths are compared and analyzed to determine the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer of the bipolar transistor.

[0011] Optionally, the relationship between the ionization-displacement synergistic effect at different depths in the oxide layer of the bipolar transistor includes: the deeper the area of ​​the ionization-displacement synergistic effect in the oxide layer of the bipolar transistor, the lower the concentration of interface state traps in the bipolar transistor, wherein the concentration of the interface state traps is positively correlated with the hole concentration.

[0012] Optionally, the displacement damage includes the oxygen vacancy defect and the dihydrogen defect, and the defect evolution process includes: the oxygen vacancy defect captures the hole in the electron-hole pair to generate an ionization defect; the dihydrogen defect captures the hole and releases hydrogen protons; wherein the concentration of the hydrogen protons is positively correlated with the concentration of the interface state traps.

[0013] Optionally, determining the number of electron-hole pairs in the oxide layer of the bipolar transistor according to an electron-hole pair calculation model includes:

[0014] The electron-hole pair calculation model is expressed by the following formula, which includes:

[0015] G n =G p =Y·g0·R d ,

[0016] Among them, G n Indicates the number of electrons, G p represents the number of holes, Y represents the yield, g0 represents the number of initial electron-hole pairs generated per unit dose, R d Indicates the dose rate.

[0017] Optionally, oxygen vacancy defects with preset initial concentrations are respectively set at different depths of the bipolar transistor oxide layer to simulate a process in which displacement defects are generated when particles of different energies irradiate the bipolar transistor oxide layer.

[0018] Optionally, the number of electron-hole pairs in the bipolar transistor oxide layer is determined according to an electron-hole pair calculation model, which is used to simulate a process of generating the electron-hole pairs by ionizing the bipolar transistor oxide layer with gamma rays.

[0019] Optionally, setting oxygen vacancy defects with preset initial concentrations at different depths of the oxide layer of the bipolar transistor includes:

[0020] For any depth in the oxide layer of the bipolar transistor, a preset initial concentration of the oxygen vacancy defects is set within a preset range of the depth.

[0021] Optionally, simulating the ionization-displacement synergistic effect at the different depths according to the oxygen vacancy defect and the electron-hole pair includes:

[0022] According to the oxygen vacancy defect and the electron-hole pair, the ionization-displacement synergistic effect at the different depths is simulated using TCAD simulation software according to the defect evolution process.

[0023] The beneficial effect of the simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer of the present invention is as follows: by respectively setting the oxygen vacancy defect concentration corresponding to the depth at the position of the different depths of the bipolar transistor oxide layer, the number of electrons-holes in the bipolar transistor oxide layer is determined based on the electron-hole pair calculation model, and the step is based on the model simulation to obtain the number of electrons-holes in the bipolar transistor oxide layer, and the data in the silicon matrix will not be introduced, thereby avoiding affecting the accuracy of the ionization-displacement synergistic effect analysis results at different depths in the oxide layer. The obtained electron-hole pairs and oxygen vacancy defect concentrations are simulated according to the process of preset defect evolution to simulate the ionization-displacement synergistic effect at different depths in the bipolar transistor oxide layer, and the hole concentration at different depths is obtained. The hole concentrations at different oxide layer depths are analyzed and compared, and the hole concentration is positively correlated with the concentration of the interface state trap, so that the relationship between the ionization-displacement synergistic effect at different depths in the bipolar transistor oxide layer can be determined. And the acquisition process is convenient, and the data obtained will not introduce interference terms, and the analysis results are more accurate and reliable.

[0024] In a second aspect, the present invention provides a device for simulating the ionization-displacement synergistic effect at different depths of a transistor oxide layer, comprising:

[0025] a setting module for respectively setting a preset initial concentration of oxygen vacancy defects at different depths of the bipolar transistor oxide layer, and determining the number of electron-hole pairs in the bipolar transistor oxide layer according to an electron-hole pair calculation model;

[0026] a simulation module for simulating the ionization-displacement synergistic effect of the oxygen vacancy defect and the electron-hole pair at the different depths based on a preset defect evolution process, and determining the hole concentration at the different depths according to the simulation results;

[0027] An analysis module is used to compare and analyze the hole concentrations at the different depths to determine the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer of the bipolar transistor.

[0028] The simulation device for the ionization-displacement synergistic effect at different depths of the transistor oxide layer of the present invention is used to implement the simulation method for the ionization-displacement synergistic effect at different depths of the transistor oxide layer as described above. Its advantages over the existing technology are the same as the advantages of the simulation method for the ionization-displacement synergistic effect at different depths of the transistor oxide layer over the existing technology, and will not be repeated here.

[0029] In a third aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, a simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer as described in any one of the first aspects is implemented.

[0030] The computer-readable storage medium of the present invention is used to implement the simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer as described above. Its advantages over the existing technology are the same as the advantages of the simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer over the existing technology, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Schematic diagram of a flow chart of a method for simulating ionization-displacement synergistic effects at different depths of a transistor oxide layer according to an embodiment of the present invention;

[0032] Figure 2 Schematic diagram of the reaction process of oxygen vacancy defects capturing holes during the defect evolution process of an embodiment of the present invention;

[0033] Figure 3 Schematic diagram of the direct proton release reaction process of shallow-level hydrogen-containing defects in the defect evolution process of an embodiment of the present invention;

[0034] Figure 4 Schematic diagram of the direct proton release reaction process of deep-level hydrogen-containing defects in the defect evolution process of an embodiment of the present invention;

[0035] Figure 5 is a graph showing the variation of hole concentration of a bipolar transistor according to the synergistic effect of different regions in an embodiment of the present invention;

[0036] Figure 6 Schematic diagram of the structure of a simulation device for the ionization-displacement synergistic effect at different depths of a transistor oxide layer according to an embodiment of the present invention. DETAILED DESCRIPTION

[0037] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings. Although certain embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of protection of the present invention.

[0038] It should be understood that the various steps described in the method embodiments of the present invention may be performed in different orders and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present invention is not limited in this respect.

[0039] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments"; the term "optionally" means "optional embodiments". The relevant definitions of other terms will be given in the following description. It should be noted that the concepts of "first", "second", etc. mentioned in the present invention are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0040] It should be noted that the modifications of "one" and "multiple" mentioned in the present invention are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0041] The names of the messages or information exchanged between multiple devices in the embodiments of the present invention are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0042] The problem solved by the present invention is how to analyze the action mechanism of the ionization displacement synergy effect in the oxide layer on the bipolar transistor from a deeper level.

[0043] To solve the above problems, the present invention provides a method and device for analyzing the ionization-displacement synergistic effect of the oxide layer of a bipolar transistor.

[0044] like Figure 1 As shown, the present invention provides a simulation method for the ionization-displacement synergistic effect at different depths of a transistor oxide layer, comprising:

[0045] In step s100 , oxygen vacancy defects with preset initial concentrations are respectively set at different depths of the bipolar transistor oxide layer, and the number of electron-hole pairs in the bipolar transistor oxide layer is determined according to an electron-hole pair calculation model.

[0046] Optionally, oxygen vacancy defects with preset initial concentrations are respectively set at different depths of the bipolar transistor oxide layer to simulate a process in which displacement defects are generated when particles of different energies irradiate the bipolar transistor oxide layer.

[0047] Specifically, the displacement damage in the SiO2 layer of the bipolar transistor that plays a major role in device performance is mainly oxygen vacancy defects VO n The simulation method described in the present invention is to simulate the process of ionization and displacement synergistic effects produced by particles of different energies incident at different depths.

[0048] Step S200 , based on a preset defect evolution process, simulating the ionization-displacement synergistic effect of the oxygen vacancy defect and the electron-hole pair at the different depths, and determining the hole concentration at the different depths according to the simulation results.

[0049] Optionally, the number of electron-hole pairs in the bipolar transistor oxide layer is determined according to an electron-hole pair calculation model, which is used to simulate a process of generating the electron-hole pairs by ionizing the bipolar transistor oxide layer with gamma rays.

[0050] Specifically, due to the amorphous nature of the SiO2 oxide layer, some oxygen vacancy defects are present. These oxygen vacancy defects increase after exposure to space particle irradiation. These increased displacement defects (oxygen vacancy defects) interact with electron-hole pairs generated by ionizing radiation. Oxygen vacancy defects react with electron-hole pairs generated by gamma ray irradiation to release hydrogen protons. The number of electron-hole pairs in the oxide layer of the bipolar transistor is determined based on an electron-hole pair calculation model.

[0051] Step S300 , performing comparative analysis on the hole concentrations at the different depths to determine the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer of the bipolar transistor.

[0052] Specifically, the hole concentrations at different oxide layer depths are analyzed and compared, and a corresponding relationship curve between the oxide layer depth and the hole concentration is established. Based on the corresponding relationship curve analysis, the ionization-displacement synergistic effect at different depths in the oxide layer of the bipolar transistor is confirmed.

[0053] In this embodiment, by setting the oxygen vacancy defect concentration corresponding to the depth at the position of different depths of the bipolar transistor oxide layer, the number of electrons and holes in the bipolar transistor oxide layer is determined based on the electron-hole pair calculation model. This step obtains the number of electrons and holes in the bipolar transistor oxide layer based on the model simulation, and does not introduce data in the silicon matrix, thereby avoiding affecting the accuracy of the ionization-displacement synergistic effect analysis results at different depths in the oxide layer. The obtained electron-hole pairs and oxygen vacancy defect concentrations are simulated according to the preset defect evolution process to simulate the ionization-displacement synergistic effect at different depths in the bipolar transistor oxide layer, and the hole concentration at different depths is obtained. The hole concentrations at different oxide layer depths are analyzed and compared, and the hole concentration is positively correlated with the concentration of the interface state trap, which can determine the relationship between the ionization-displacement synergistic effect at different depths in the bipolar transistor oxide layer. In addition, the acquisition process is convenient, and the acquired data will not introduce interference terms, and the analysis results are more accurate and reliable.

[0054] Optionally, the displacement damage includes the oxygen vacancy defect and the dihydrogen defect, and the defect evolution process includes: the oxygen vacancy defect captures the hole in the electron-hole pair to generate an ionization defect; the dihydrogen defect captures the hole and releases hydrogen protons; wherein the concentration of the hydrogen protons is positively correlated with the concentration of the interface state traps.

[0055] Specifically, Figure 2 The process of oxygen vacancy defects capturing holes is described. Neutral oxygen vacancies interact with defects to form shallow-level defects, which then undergo wrinkling to form deep-level defects. Since a small amount of hydrogen molecules are present in the SiO2 oxide layer during its preparation, both these shallow-level defects and deep-level defects can cause hydrogen dissociation, generating hydrogen protons.

[0056] like Figure 3 and 4 As shown, Figure 3 It is a reaction process in which shallow energy level hydrogen defects directly release protons. Figure 4 It is a reaction process in which deep-level hydrogen defects directly release protons, where: VO n is an oxygen vacancy defect, E δ (H) is a shallow energy level containing hydrogen and oxygen vacancy defects, E δ (H2) is a shallow energy level double hydrogen defect, E γ (H) is a deep energy level containing hydrogen and oxygen vacancy defects, E γ (H2) is a deep-level double hydrogen defect; E' δ 、E'δ (H) is a charged shallow energy level defect, E' δ (H2) is a charged shallow energy level double hydrogen defect, E' γ 、E' γ (H) is a charged deep level defect, E' γ (H2) is a charged deep-level double hydrogen defect, H + For protons.

[0057] Shallow energy level hydrogen and oxygen vacancy defects obtain charged shallow energy level double hydrogen defects after defects, and the charged shallow energy level double hydrogen defects are converted into charged shallow energy level defects after releasing hydrogen protons; deep energy level hydrogen and oxygen vacancy defects obtain charged deep energy level double hydrogen defects after defects, and the charged deep energy level double hydrogen defects are converted into charged deep energy level defects after releasing hydrogen protons.

[0058] In this optional embodiment, the evolution process of displacement defects and ionization defects is constructed to reflect the ionization-displacement synergistic effect in the bipolar oxide layer.

[0059] Optionally, the relationship between the ionization-displacement synergistic effect at different depths in the oxide layer of the bipolar transistor includes: the deeper the area of ​​the ionization-displacement synergistic effect in the oxide layer of the bipolar transistor, the lower the concentration of interface state traps in the bipolar transistor, wherein the concentration of the interface state traps is positively correlated with the hole concentration.

[0060] Specifically, the simulation mechanism research based on the simulation method can obtain the mechanism of synergistic effect in interaction regions of different depths. That is, as the depth of the synergistic interaction region increases, the concentration of holes captured by oxygen vacancies increases accordingly, resulting in a decrease in the concentration of holes captured by double hydrogen defects, and then a decrease in the concentration of released hydrogen ions. After the hydrogen ion concentration decreases, the concentration of interface state traps generated will eventually decrease.

[0061] For example, Figure 5 As shown in the figure, the hole concentration distribution caused by the synergistic effect of different regions of the bipolar transistor can be seen in the interactive region (0.5-0.7μm, 0.7-0.9μm, 0.9-1.1μm and 1.3-1.5μm), the hole concentration decreases significantly. This indicates that the vacancy defect VO in the cooperative interaction region n according to Figure 2 The process described above captures a large number of holes, resulting in a decrease in the hole concentration. It can be seen that as the depth of the cooperative interaction region increases, the concentration of consumed holes also increases. This leads to Figure 3 and Figure 4The concentration of holes captured by shallow and deep double hydrogen defects is significantly reduced, resulting in a decrease in the number of charged shallow and deep defects, and in turn, a decrease in the concentration of released hydrogen protons. Since the hydrogen proton concentration is proportional to the concentration of interface state traps, it can be assumed that the concentration of interface state traps decreases as the depth of the cooperative interaction region increases.

[0062] It should be noted that Figure 2 The figure shows that both charged shallow-level defects and charged deep-level defects can cause hydrogen dissociation to produce hydrogen protons. However, the content of hydrogen molecules in the oxide layer of bipolar transistors is very small, so the hydrogen protons produced by the dissociation of hydrogen molecules have little effect on the analysis results.

[0063] In this optional embodiment, an image of the hole concentration varying with the depth of the oxide layer is obtained, which is equivalent to a graph of the interface state defect concentration varying with the energy of the incident ions in the oxide layer of the bipolar transistor. Based on the image analysis, it can be clearly seen that as the interaction increases, the hole concentration changes accordingly. Therefore, it can be considered that as the depth of the cooperative interaction region increases, the concentration of the interface state traps also decreases.

[0064] Optionally, determining the number of electron-hole pairs in the oxide layer of the bipolar transistor according to an electron-hole pair calculation model includes:

[0065] The electron-hole pair calculation model is expressed by the following formula, which includes:

[0066] G n =G p =Y·g0·R d ,

[0067] Among them, G n Indicates the number of electrons, G p represents the number of holes, Y represents the yield, g0 represents the number of initial electron-hole pairs generated per unit dose, R d Indicates the dose rate.

[0068] Specifically, the product of the number of initial electron-hole pairs generated per unit dose and the yield at the corresponding depth and the dose rate is obtained. The product represents the number of holes at the corresponding depth and the number of electrons at the corresponding depth.

[0069] Optionally, setting oxygen vacancy defects with preset initial concentrations at different depths of the oxide layer of the bipolar transistor includes:

[0070] For any depth in the oxide layer of the bipolar transistor, a preset initial concentration of the oxygen vacancy defects is set within a preset range of the depth.

[0071] Specifically, particle incidence usually produces high-concentration displacement defects within the range of its Bragg peak (full width at half maximum is 200nm). Therefore, in the simulation described in the present invention, 200nm is used as the range of the interaction area, and high-concentration VO is added within the range of different depths of 200nm. n Defects are used as the initial defect concentration during simulation, so as to achieve the purpose of simulating the displacement defects generated by particles with different energies at different depths.

[0072] Optionally, simulating the ionization-displacement synergistic effect at the different depths according to the oxygen vacancy defect and the electron-hole pair includes:

[0073] According to the oxygen vacancy defect and the electron-hole pair, the ionization-displacement synergistic effect at the different depths is simulated using TCAD simulation software according to the defect evolution process.

[0074] like Figure 6 As shown, another embodiment of the present invention provides a simulation device for the ionization-displacement synergistic effect at different depths of a transistor oxide layer, comprising:

[0075] a setting module for respectively setting a preset initial concentration of oxygen vacancy defects at different depths of the bipolar transistor oxide layer, and determining the number of electron-hole pairs in the bipolar transistor oxide layer according to an electron-hole pair calculation model;

[0076] a simulation module for simulating the ionization-displacement synergistic effect of the oxygen vacancy defect and the electron-hole pair at the different depths based on a preset defect evolution process, and determining the hole concentration at the different depths according to the simulation results;

[0077] An analysis module is used to compare and analyze the hole concentrations at the different depths to determine the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer of the bipolar transistor.

[0078] The simulation device for the ionization-displacement synergistic effect at different depths of the transistor oxide layer of this embodiment is used to implement the simulation method for the ionization-displacement synergistic effect at different depths of the transistor oxide layer as described above. Its advantages over the existing technology are the same as the advantages of the simulation method for the ionization-displacement synergistic effect at different depths of the transistor oxide layer over the existing technology, and will not be repeated here.

[0079] Yet another embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the method for simulating the ionization-displacement synergistic effect at different depths of a transistor oxide layer as described above is implemented.

[0080] The computer-readable storage medium of this embodiment is used to implement the simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer as described above. Its advantages over the existing technology are the same as the advantages of the simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer over the existing technology, and will not be repeated here.

[0081] Those skilled in the art will understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program. The program can be stored in a computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the above-mentioned methods. The storage medium can be a magnetic disk, an optical disk, a read-only memory (ROM), or a random access memory (RAM). In this application, the units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the embodiments of the present invention. In addition, the functional units in the various embodiments of the present invention can be integrated into a processing unit, or each unit can exist physically separately, or two or more units can be integrated into a single unit. The above-mentioned integrated units can be implemented in the form of hardware or software functional units.

[0082] Although the present invention is disclosed as above, the scope of protection disclosed by the present invention is not limited thereto. Those skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications will fall within the scope of protection of the present invention.

Claims

1. A method for simulating the ionization-displacement synergistic effect at different depths of a transistor oxide layer, characterized in that: include: Oxygen vacancy defects with preset initial concentrations are respectively set at different depths of a bipolar transistor oxide layer, and the number of electron-hole pairs in the bipolar transistor oxide layer is determined according to an electron-hole pair calculation model; the determination of the number of electron-hole pairs in the bipolar transistor oxide layer according to the electron-hole pair calculation model is used to simulate a process of generating the electron-hole pairs by ionizing the bipolar transistor oxide layer with gamma rays; Determining the number of electron-hole pairs in the oxide layer of the bipolar transistor according to the electron-hole pair calculation model includes: The electron-hole pair calculation model is expressed by the following formula, which includes: ， in, represents the number of electrons, represents the number of holes, Indicates the yield, It represents the number of initial electron-hole pairs generated per unit dose, represents the dose rate; Based on a preset defect evolution process, the ionization-displacement synergistic effect of the oxygen vacancy defect and the electron-hole pair at the different depths is simulated, and the hole concentration at the different depths is determined according to the simulation results; the displacement damage includes the oxygen vacancy defect and the dihydrogen defect, and the defect evolution process includes: the oxygen vacancy defect captures the hole in the electron-hole pair to generate an ionization defect; the dihydrogen defect captures the hole and releases hydrogen protons; wherein the concentration of the hydrogen protons is positively correlated with the concentration of the interface state traps; A comparative analysis is performed on the hole concentrations at the different depths to determine the relationship between the ionization-displacement synergistic effects at different depths in the bipolar transistor oxide layer; the relationship between the ionization-displacement synergistic effects at different depths in the bipolar transistor oxide layer includes: the deeper the area of ​​the ionization-displacement synergistic effect in the bipolar transistor oxide layer, the lower the concentration of interface state traps in the bipolar transistor, wherein the concentration of the interface state traps is positively correlated with the hole concentration.

2. The method for simulating the ionization-displacement synergistic effect at different depths of the transistor oxide layer according to claim 1, characterized in that: The oxygen vacancy defects with preset initial concentrations are respectively set at different depths of the bipolar transistor oxide layer to simulate the process of generating displacement defects when particles of different energies irradiate the bipolar transistor oxide layer.

3. The method for simulating the ionization-displacement synergistic effect at different depths of the transistor oxide layer according to claim 1, characterized in that: The step of setting oxygen vacancy defects with preset initial concentrations at different depths of the oxide layer of the bipolar transistor comprises: For any depth in the oxide layer of the bipolar transistor, a preset initial concentration of the oxygen vacancy defects is set within a preset range of the depth.

4. The method for simulating the ionization-displacement synergistic effect at different depths of the transistor oxide layer according to claim 1, characterized in that: The simulating the ionization-displacement synergistic effect at the different depths according to the oxygen vacancy defect and the electron-hole pair includes: According to the oxygen vacancy defect and the electron-hole pair, the ionization-displacement synergistic effect at the different depths is simulated using TCAD simulation software according to the defect evolution process.

5. A device for simulating the ionization-displacement synergistic effect at different depths of a transistor oxide layer, characterized in that: A simulation method for realizing the ionization-displacement synergistic effect at different depths of a transistor oxide layer as claimed in any one of claims 1 to 4, comprising: a setting module for respectively setting a preset initial concentration of oxygen vacancy defects at different depths of the bipolar transistor oxide layer, and determining the number of electron-hole pairs in the bipolar transistor oxide layer according to an electron-hole pair calculation model; a simulation module for simulating the ionization-displacement synergistic effect of the oxygen vacancy defect and the electron-hole pair at the different depths based on a preset defect evolution process, and determining the hole concentration at the different depths according to the simulation results; An analysis module is used to compare and analyze the hole concentrations at the different depths to determine the relationship between the ionization-displacement synergistic effects at different depths in the oxide layer of the bipolar transistor.

6. A computer-readable storage medium, characterized in that The storage medium stores a computer program, and when the computer program is executed by a processor, the simulation method of the ionization-displacement synergistic effect at different depths of the transistor oxide layer as claimed in any one of claims 1 to 4 is implemented.

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