Display device

Abstract

A display device (50a) in which a non-display region (N) is provided in an island shape inside a display region, a through-hole (H) that penetrates in a thickness direction of a base substrate (10) is formed in the non-display region (N), and a separation wall (Ea) that surrounds the through-hole (H) is provided in the non-display region (N), the separation wall (Ea) includes a wall base portion (19da) that is provided in the same layer as a planarization film (19a) by the same material and is provided in a frame shape, and a wall upper portion (20ba) that is provided in a roof shape on the wall base portion (19da) so as to protrude from a display region side toward the through-hole (H) side and is formed in the same layer as an inorganic insulating film (20a) by the same material.

Description

TECHNICAL FIELD

[0001] The present application relates to a display device. BACKGROUND

[0002] In recent years, as a display device that replaces a liquid crystal display device, an organic electroluminescence (hereinafter also referred to as EL) display device of a self-emission type using an organic EL element has been attracting attention. In this case, the organic EL element has, for example, an organic EL layer provided as a functional layer, a first electrode provided on one surface side of the organic EL layer, and a second electrode provided on the other surface side of the organic EL layer. In the organic EL display device, a structure is proposed in which, for example, in order to provide an electronic component such as a camera, a fingerprint sensor, or the like in the inside of a display region in which image display is performed, an island-shaped non-display region is provided, and a through-hole that penetrates in the thickness direction is provided in the non-display region (for example, refer to Patent Literature 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2019-35950 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] An object of the present application is to separate the display region side and the through-hole side and form a common functional layer at low cost.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] In order to achieve the above object, a display device of the present application includes: a base substrate; a thin film transistor layer provided on the base substrate, the thin film transistor layer having a planarization film and an inorganic insulating film stacked in this order; and a light-emitting element layer provided on the thin film transistor layer, the light-emitting element layer having a plurality of first electrodes, a plurality of functional layers, and a common second electrode stacked in this order corresponding to a plurality of sub-pixels constituting a display region, in the inside of the display region, a non-display region is provided in an island shape, a through-hole that penetrates in a thickness direction of the base substrate is formed in the non-display region, and a separation wall is provided in the non-display region in a manner of surrounding the through-hole, the separation wall includes: a wall base portion provided in the same layer as the planarization film by the same material and provided in a frame shape; and a wall upper portion provided in a gable shape on the wall base portion in a manner of protruding from the display region side to the through-hole side and formed in the same layer as the inorganic insulating film by the same material.

[0010] ADVANTAGEOUS EFFECTS

[0011] According to the present application, the display region side and the through-hole side can be separated and a common functional layer can be formed at low cost. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a plan view showing the schematic configuration of an organic EL display device according to the first embodiment of the present application.

[0013] Figure 2 is a plan view of a display region of the organic EL display device according to the first embodiment of the present application.

[0014] Figure 3 is a cross-sectional view of the display region of the organic EL display device according to the first embodiment of the present application, taken along the line III-III in Figure 1

[0015] Figure 4 is an equivalent circuit diagram of a TFT layer constituting the organic EL display device according to the first embodiment of the present application.

[0016] Figure 5 is a cross-sectional view of an organic EL layer constituting the organic EL display device according to the first embodiment of the present application.

[0017] Figure 6 is a cross-sectional view of a frame region of the organic EL display device according to the first embodiment of the present application, taken along the line VI- VI in Figure 1

[0018] Figure 7 is a cross-sectional view of the frame region of the organic EL display device according to the first embodiment of the present application, taken along the line VII-VII in Figure 1

[0019] Figure 8 is a cross-sectional view of the frame region of the organic EL display device according to the first embodiment of the present application, taken along the line VIII-VIII in Figure 1

[0020] Figure 9 is a plan view of a non-display region and its surroundings of the organic EL display device according to the first embodiment of the present application.

[0021] Figure 10 is a cross-sectional view of the non-display region of the organic EL display device according to the first embodiment of the present application, taken along the line X-X in Figure 9

[0022] Figure 11 is a cross-sectional view showing a part of a separation wall forming step of a manufacturing method of the organic EL display device according to the first embodiment of the present application.

[0023] Figure 12 is a cross-sectional view showing a step immediately after the step shown in Figure 11 ​​​​​FIG. 1 is a cross-sectional view showing a part of a separation wall forming step of a manufacturing method of an organic EL display device according to the first embodiment of the present application, and corresponds to FIG. 2.

[0024] Figure 13 FIG. 3 is a cross-sectional view of a non-display region of an organic EL display device according to the second embodiment of the present application, and corresponds to FIG. 4. Figure 10

[0025] Figure 14 FIG. 5 is a cross-sectional view showing a part of a separation wall forming step of a manufacturing method of an organic EL display device according to the second embodiment of the present application, and corresponds to FIG. 6. Figure 11

[0026] Figure 15 FIG. 7 is a cross-sectional view showing a part of a separation wall forming step of a manufacturing method of an organic EL display device according to the second embodiment of the present application, and corresponds to FIG. 8. Figure 14 Figure 12

[0027] Figure 16 FIG. 9 is a cross-sectional view of a non-display region of an organic EL display device according to the third embodiment of the present application, and corresponds to FIG. 10. Figure 10

[0028] Figure 17 FIG. 11 is a cross-sectional view showing a part of a separation wall forming step of a manufacturing method of an organic EL display device according to the third embodiment of the present application, and corresponds to FIG. 12. Figure 11

[0029] Figure 18 FIG. 13 is a cross-sectional view showing a part of a separation wall forming step of a manufacturing method of an organic EL display device according to the third embodiment of the present application, and corresponds to FIG. 14. Figure 17 Figure 12 DETAILED DESCRIPTION

[0030] Hereinafter, the embodiments of the present application will be described in detail based on the accompanying drawings. Note that the present application is not limited to the following embodiments.

[0031] FIRST EMBODIMENT

[0032] Figures 1-12 The first embodiment of the present application is described. In each of the following embodiments, an organic EL display device having an organic EL element is exemplified as a display device having a light-emitting element. Here, Figure 1 is a plan view showing the schematic configuration of the organic EL display device 50a according to the present embodiment. Further, Figure 2 is a plan view of the display region D of the organic EL display device 50a. Further, Figure 3 is a cross-sectional view taken along line A-A' in FIG. 2.​​​​​​​​Figure 1 a cross-sectional view of a display region D of the organic EL display device 50a along the III-III line in FIG. 1. Further, Figure 4 is an equivalent circuit diagram of a TFT layer 30 constituting the organic EL display device 50a. Further, Figure 5 is a cross-sectional view of an organic EL layer 33 constituting the organic EL display device 50a. Further, Figure 6 , Figure 7 and Figure 8 are cross-sectional views of a frame region F of the organic EL display device 50a along the VI-VI line, the VII-VII line, and the VIII-VIII line in FIG. 1. Further, Figure 1 is a plan view of a non-display region N and its surroundings of the organic EL display device 50a. Further, Figure 9 is a cross-sectional view of the non-display region N of the organic EL display device 50a along the X-X line in FIG. 1. Figure 10 Figure 9 As shown in FIG. 1, the organic EL display device 50a has, for example, a display region D provided in a rectangular shape and performing image display, and a frame region F provided in a rectangular frame shape around the display region D. Note that, in this embodiment mode, the display region D in a rectangular shape is exemplified, but the rectangular shape also includes, for example, a shape in which sides are in a circular arc shape, a shape in which corners are in a circular arc shape, a shape in which a part of a side has a notch, and the like, which are substantially rectangular shapes.

[0033] As shown in FIG. 2, in the display region D, a plurality of sub-pixels P are arranged in a matrix shape. Further, in the display region D, as shown in FIG. 3, for example, a sub-pixel P having a red light-emitting region Lr for performing red display, a sub-pixel P having a green light-emitting region Lg for performing green display, and a sub-pixel P having a blue light-emitting region Lb for performing blue display are provided in a manner of being adjacent to each other. Note that, in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P having the red light-emitting region Lr, the green light-emitting region Lg, and the blue light-emitting region Lb. Further, as shown in FIG. 4, inside the display region D, a non-display region N is provided in an island shape. Here, as shown in FIG. 5, in the non-display region N, for example, in order to arrange an electronic component 60 such as a camera, a fingerprint sensor, or the like, a through-hole H penetrating in a thickness direction of a resin substrate layer 10 described later is provided. Note that, regarding the detailed configuration and the like of the non-display region N, use is made of FIG. 6 and FIG. 7 described later. Figure 1

[0034] As shown in FIG. 2, in the display region D, a plurality of sub-pixels P are arranged in a matrix shape. Further, in the display region D, as shown in FIG. 3, for example, a sub-pixel P having a red light-emitting region Lr for performing red display, a sub-pixel P having a green light-emitting region Lg for performing green display, and a sub-pixel P having a blue light-emitting region Lb for performing blue display are provided in a manner of being adjacent to each other. Note that, in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P having the red light-emitting region Lr, the green light-emitting region Lg, and the blue light-emitting region Lb. Further, as shown in FIG. 4, inside the display region D, a non-display region N is provided in an island shape. Here, as shown in FIG. 5, in the non-display region N, for example, in order to arrange an electronic component 60 such as a camera, a fingerprint sensor, or the like, a through-hole H penetrating in a thickness direction of a resin substrate layer 10 described later is provided. Note that, regarding the detailed configuration and the like of the non-display region N, use is made of FIG. 6 and FIG. 7 described later. Figure 2 Figure 2 As shown in FIG. 2, in the display region D, a plurality of sub-pixels P are arranged in a matrix shape. Further, in the display region D, as shown in FIG. 3, for example, a sub-pixel P having a red light-emitting region Lr for performing red display, a sub-pixel P having a green light-emitting region Lg for performing green display, and a sub-pixel P having a blue light-emitting region Lb for performing blue display are provided in a manner of being adjacent to each other. Note that, in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P having the red light-emitting region Lr, the green light-emitting region Lg, and the blue light-emitting region Lb. Further, as shown in FIG. 4, inside the display region D, a non-display region N is provided in an island shape. Here, as shown in FIG. 5, in the non-display region N, for example, in order to arrange an electronic component 60 such as a camera, a fingerprint sensor, or the like, a through-hole H penetrating in a thickness direction of a resin substrate layer 10 described later is provided. Note that, regarding the detailed configuration and the like of the non-display region N, use is made of FIG. 6 and FIG. 7 described later. Figure 1 Figure 1 As shown in FIG. 2, in the display region D, a plurality of sub-pixels P are arranged in a matrix shape. Further, in the display region D, as shown in FIG. 3, for example, a sub-pixel P having a red light-emitting region Lr for performing red display, a sub-pixel P having a green light-emitting region Lg for performing green display, and a sub-pixel P having a blue light-emitting region Lb for performing blue display are provided in a manner of being adjacent to each other. Note that, in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P having the red light-emitting region Lr, the green light-emitting region Lg, and the blue light-emitting region Lb. Further, as shown in FIG. 4, inside the display region D, a non-display region N is provided in an island shape. Here, as shown in FIG. 5, in the non-display region N, for example, in order to arrange an electronic component 60 such as a camera, a fingerprint sensor, or the like, a through-hole H penetrating in a thickness direction of a resin substrate layer 10 described later is provided. Note that, regarding the detailed configuration and the like of the non-display region N, use is made of FIG. 6 and FIG. 7 described later. Figure 9 Figure 10 As shown in FIG. 2, in the display region D, a plurality of sub-pixels P are arranged in a matrix shape. Further, in the display region D, as shown in FIG. 3, for example, a sub-pixel P having a red light-emitting region Lr for performing red display, a sub-pixel P having a green light-emitting region Lg for performing green display, and a sub-pixel P having a blue light-emitting region Lb for performing blue display are provided in a manner of being adjacent to each other. Note that, in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P having the red light-emitting region Lr, the green light-emitting region Lg, and the blue light-emitting region Lb. Further, as shown in FIG. 4, inside the display region D, a non-display region N is provided in an island shape. Here, as shown in FIG. 5, in the non-display region N, for example, in order to arrange an electronic component 60 such as a camera, a fingerprint sensor, or the like, a through-hole H penetrating in a thickness direction of a resin substrate layer 10 described later is provided. Note that, regarding the detailed configuration and the like of the non-display region N, use is made of FIG. 6 and FIG. 7 described later.

[0035] The terminal portion T is provided in the frame region F in a manner of extending in one direction (vertical direction in the drawing).​​​​​Figure 1 right end portion in the figure. Further, in the frame region F, as shown in Figure 1 the figure, a bending portion B capable of being bent by 180° (U-shaped) is provided in a manner extending in one direction (vertical direction in the figure) between the display region D and the terminal portion T. Further, a plurality of terminals are arranged on the terminal portion T in the extending direction of the terminal portion T. Further, in the frame region F, as shown in Figure 1 and Figure 6 the figure, a groove G in a substantially C shape in plan view is provided in a manner penetrating the first planarization film 19a and the second planarization film 22a. Here, as shown in Figure 1 the figure, the groove G is provided in a substantially C shape in a manner opening at the terminal portion T side in plan view.

[0036] As shown in Figure 3 the figure, the organic EL display device 50a includes a resin substrate layer 10 provided as a base substrate, a thin film transistor (TFT) layer 30 provided on the resin substrate layer 10, an organic EL element layer 35 provided on the TFT layer 30 as a light emitting element layer, and a sealing film 40 provided on the organic EL element layer 35.

[0037] The resin substrate layer 10 is composed of, for example, an organic resin material such as a polyimide resin.

[0038] As shown in Figure 3 the figure, the TFT layer 30 includes a primer film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b (see Figure 4 ), a plurality of third TFTs 9c, and a plurality of capacitors 9d provided on the primer film 11. Figure 3 As shown in the figure, the TFT layer 30 includes a first planarization film 19a, a third interlayer insulating film 20a, and a second planarization film 22a provided in this order on each first TFT 9a, each second TFT 9b, each third TFT 9c, and each capacitor 9d.

[0039] In the TFT layer 30, as shown in Figure 3 the figure, a semiconductor layer 12a and 12b, a gate insulating film 13, a gate 14a and 14b, and a lower conductive layer 14c, a first interlayer insulating film 15, an upper conductive layer 16a, a second interlayer insulating film 17, a source 18a and 18c, and a drain 18b and 18d, a first planarization film 19a, a third interlayer insulating film 20a, a power supply line 21a and a relay electrode 21b, and a second planarization film 22a are sequentially stacked on the primer film 11.

[0040] In the TFT layer 30, as shown in Figure 2 and Figure 4 , a plurality of gate lines 14d are provided as wiring layers in a manner extending in parallel with each other in the lateral direction in the figure. Further, in the TFT layer 30, as shown in Figure 2 and Figure 4 , a plurality of light emission control lines 14e are provided as wiring layers in a manner extending in parallel with each other in the lateral direction in the figure. In addition, the gate lines 14d and the light emission control lines 14e are formed of the same material in the same layer as the gates 14a and 14b and the lower conductive layer 14c. Further, as shown in Figure 2 , each light emission control line 14e is provided adjacent to each gate line 14d. Further, in the TFT layer 30, as shown in Figure 2 and Figure 4 , a plurality of source lines 18f are provided as wiring layers in a manner extending in parallel with each other in the vertical direction in the figure. In addition, the source lines 18f are formed of the same material in the same layer as the sources 18a and 18c and the drains 18b and 18d. Further, in the TFT layer 30, as shown in Figure 1 , the power supply line 21a is provided in a lattice shape. Further, in the TFT layer 30, as shown in Figure 4 , in each sub-pixel P, a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d are provided, respectively.

[0041] The undercoat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are provided as other inorganic insulating films, for example, are composed of a single layer film or a laminated film of silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0042] As shown in Figure 4 , the first TFT 9a is electrically connected to the corresponding gate line 14d, the source line 18f, and the second TFT 9b in each sub-pixel P. Further, as shown in Figure 3 , the first TFT 9a has a semiconductor layer 12a, a gate insulating film 13, a gate 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, and a source 18a and a drain 18b provided in this order on the undercoat film 11. Here, as shown in Figure 3 , the semiconductor layer 12a is provided on the undercoat film 11, has a channel region, a source region, and a drain region, as will be described later. Further, the semiconductor layer 12a and the semiconductor layer 12b to be described later are formed of, for example, a low-temperature polysilicon film, an oxide semiconductor film of In-Ga-Zn-O type, or the like. Further, as shown in Figure 3 , the gate insulating film 13 is provided in a manner covering the semiconductor layer 12a. Further, as shown in Figure 3As shown, the gate 14a is disposed on the gate insulating film 13 in a manner that overlaps with the channel region of the semiconductor layer 12a. Furthermore, as... Figure 3 As shown, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially disposed such that they cover the gate 14a. Furthermore, as... Figure 3 As shown, the source 18a and drain 18b are arranged separately from each other on the second interlayer insulating film 17. Furthermore, as... Figure 3 As shown, the source 18a and drain 18b are electrically connected to the source region and drain region of the semiconductor layer 12a, respectively, via contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17.

[0043] like Figure 4 As shown, the second TFT 9b is electrically connected to the corresponding first TFT 9a, power line 21a, and third TFT 9c in each sub-pixel P. Furthermore, the second TFT 9b has a substantially identical structure to the first TFT 9a and the third TFT 9c, which will be described later.

[0044] like Figure 4 As shown, the third TFT 9c is electrically connected to the corresponding second TFT 9a, power line 21a, and light-emitting control line 14e in each sub-pixel P. Furthermore, as... Figure 3 As shown, the third TFT 9c includes a semiconductor layer 12b, a gate insulating film 13, a gate 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, a source 18c, and a drain 18d, which are sequentially disposed on the base coating film 11. Here, as Figure 3 As shown, semiconductor layer 12b is disposed on the base coating film 11, and like semiconductor layer 12a, has a channel region, a source region, and a drain region. Furthermore, as... Figure 3 As shown, the gate insulating film 13 is provided in a manner that covers the semiconductor layer 12b. Furthermore, as... Figure 3 As shown, the gate 14b is disposed on the gate insulating film 13 in a manner that overlaps with the channel region of the semiconductor layer 12b. Furthermore, as... Figure 3 As shown, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially disposed to cover the gate 14b. Furthermore, as... Figure 3 As shown, the source 18c and drain 18d are arranged separately from each other on the second interlayer insulating film 17. Furthermore, as... Figure 3 As shown, the source 18c and drain 18d are electrically connected to the source and drain regions of the semiconductor layer 12b, respectively, via contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Furthermore, as... Figure 3 As shown, the drain 18d is electrically connected to the relay electrode 21b via a contact hole formed in the first planarization film 19a and the third interlayer insulating film 20a.

[0045] In addition, in this embodiment, the first TFT 9a, the second TFT 9b, and the third TFT 9c are exemplified as top gate type, but the first TFT 9a, the second TFT 9b, and the third TFT 9c can also be bottom gate type.

[0046] As Figure 4 indicated, the capacitor 9d is electrically connected with the corresponding first TFT 9a and the power supply line 21a in each sub-pixel P. Here, as Figure 3 indicated, the capacitor 9d includes a lower conductive layer 14c, a first interlayer insulating film 15 provided so as to cover the lower conductive layer 14c, and an upper conductive layer 16a provided on the first interlayer insulating film 15 so as to overlap the lower conductive layer 14c. In addition, the upper conductive layer 16a is electrically connected with the power supply line 21a via a contact hole (not shown) formed in the second interlayer insulating film 17, the first planarization film 19a, and the third interlayer insulating film 20a.

[0047] The first planarization film 19a, the second planarization film 21a, and the edge cover 32a described later are composed of, for example, an organic resin material such as polyimide resin, acrylic resin, novolak resin, or the like.

[0048] The third interlayer insulating film 20a is provided as an inorganic insulating film and is composed of, for example, a single layer film or a laminated film of silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0049] As Figure 3 indicated, the organic EL element layer 35 includes a plurality of first electrodes 31a provided so as to be laminated on the TFT layer 30 in this order, an edge cover 32a, a plurality of organic EL layers 33, and a second electrode 34.

[0050] As Figure 3 indicated, the plurality of first electrodes 31a are provided on the second planarization film 22a in a matrix shape in a manner corresponding to the plurality of sub-pixels P. Here, as Figure 3As shown, the first electrode 31a is electrically connected to the drain 18d of each third TFT 9c via a contact hole formed in the first planarization film 19a and the third interlayer insulating film 20a, and a contact hole formed in the relay electrode 21b and the second planarization film 22a. Further, the first electrode 31a has a function of injecting holes (positive holes) into the organic EL layer 33. Furthermore, in order to improve the efficiency of injecting holes into the organic EL layer 33, it is more preferable that the first electrode 31a be formed of a material having a large work function. Here, as the material constituting the first electrode 31a, for example, a metal material such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), tin (Sn), or the like can be listed. Further, the material constituting the first electrode 31a can also be, for example, an alloy of astatine (At) / astatine oxide (AtO2), or the like. Also, the material constituting the first electrode 31a can also be, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. Further, the first electrode 31a can also be formed by laminating a plurality of layers composed of the above-described materials. In addition, as a compound material having a large work function, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like can be listed.

[0051] As shown, the edge cover 32a is provided in a lattice shape so as to cover the peripheral end portions of the first electrodes 31a in a manner common to the plurality of sub-pixels P. Figure 3 As shown, the edge cover 32a is provided in a lattice shape so as to cover the peripheral end portions of the first electrodes 31a in a manner common to the plurality of sub-pixels P.

[0052] Figure 3 As shown, the plurality of organic EL layers 33 are arranged on the plurality of first electrodes 31a in a matrix shape in a manner corresponding to the plurality of sub-pixels P. Here, as shown, each organic EL layer 33 is provided with a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer 5, which are sequentially provided on the first electrode 31a. Figure 5

[0053] The hole injection layer 1 is also called an anode buffer layer, has a function of bringing the energy levels of the first electrode 31a and the organic EL layer 33 close to each other, and improving the hole injection efficiency from the first electrode 31a to the organic EL layer 33, and is provided as a common functional layer common to the plurality of sub-pixels P. Here, as the material constituting the hole injection layer 1, for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a stilbene derivative, or the like can be listed.

[0054] ​​The hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 31a to the organic EL layer 33, and is provided as a common functional layer shared by a plurality of sub-pixels P. Here, as a material constituting the hole transport layer 2, for example, a porphyrin derivative, an aromatic tertiary amine compound, a styrylamine derivative, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazolone derivative, a phenylenediamine derivative, an arylamine derivative, an amine-substituted chalcone derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a stilbene derivative, hydrogenated amorphous silicon, amorphous hydrogenated silicon carbide, zinc sulfide, or zinc selenide, or the like can be listed.

[0055] The light emitting layer 3 is provided as a separate functional layer for each sub-pixel P, and is a region in which holes and electrons are injected from the first electrode 31a and the second electrode 34, respectively, and the holes and the electrons recombine when a voltage is applied to the first electrode 31a and the second electrode 34. Here, the light emitting layer 3 is formed of a material having high light emission efficiency. Also, as a material constituting the light emitting layer 3, for example, a metal oxinoid compound [8-hydroxyquinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenyl ethylene derivative, a vinyl propionone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, a benzoxazole derivative, an oxadiazole derivative, an oxazole derivative, a benzimidazole derivative, a thiadiazole derivative, a benzthiazole derivative, a styryl derivative, a styrylamine derivative, a Bis(Styryl) Benzene derivative, a trisstyrylbenzene derivative, a perylene derivative, a pyrenone derivative, an aminopyrene derivative, a pyridine derivative, a rhodamine derivative, an acridine derivative, a phenoxazone, a quinacridone derivative, rubrene, poly-p-phenylene vinylene, or polysilanes, or the like can be listed.

[0056] The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3, and is provided as a common functional layer shared by a plurality of sub-pixels P. Here, as a material constituting the electron transport layer 4, for example, as an organic compound, an oxadiazole derivative, a triazole derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a tetracyanoanthraquinone dimethane derivative, a diphenoquinone derivative, a fluorenone derivative, a thiophene derivative, a metal oxinoid compound [8-hydroxyquinoline metal complex], or the like can be listed.

[0057] The electron injection layer 5 functions to bring the energy levels of the second electrode 34 and the organic EL layer 33 closer together, thereby improving the efficiency of electron injection from the second electrode 34 into the organic EL layer 33. This function reduces the driving voltage of each organic EL element constituting the organic EL element layer 35. Furthermore, the electron injection layer 5 is also referred to as a cathode buffer layer, and is provided as a shared functional layer for multiple sub-pixels P. Examples of materials constituting the electron injection layer 5 include inorganic alkali compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), as well as aluminum oxide (Al2O3) and strontium oxide (SrO).

[0058] like Figure 3 As shown, the second electrode 34 is configured to cover each organic EL layer 33 and the edge mask 32a in a manner shared by multiple sub-pixels P. Furthermore, the second electrode 34 has the function of injecting electrons into the organic EL layer 33. In order to improve the efficiency of electron injection into the organic EL layer 33, the second electrode 34 is more preferably made of a material with a low work function. Examples of materials constituting the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). Furthermore, the second electrode 34 may also be formed from alloys such as magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). Additionally, the second electrode 34 may also be formed from conductive oxides such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). Furthermore, the second electrode 34 may also be formed by stacking multiple layers of the above-mentioned materials. In addition, materials with low work functions include, for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc.

[0059] like Figure 3 , Figure 6 , Figure 7 and Figure 10As shown, the sealing film 40 has a first inorganic sealing film 36, an organic sealing film 37, and a second inorganic sealing film 38, which are provided so as to cover the second electrode 34 and are sequentially stacked on the second electrode 34, and has a function of protecting each organic EL layer 33 of the organic EL element layer 35 from moisture and oxygen. Here, the first inorganic sealing film 36 and the second inorganic sealing film 38 are composed of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. Further, the organic sealing film 37 is composed of, for example, an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.

[0060] Further, as shown in Figure 1 , the organic EL display device 50a has, in the frame region F, a first outer side barrier wall Wa provided in a rectangular frame shape so as to surround the display region D on the outer side of the trench G, and a second outer side barrier wall Wb provided in a rectangular frame shape around the first outer side barrier wall Wa.

[0061] As shown in Figure 6 and Figure 7 , the first outer side barrier wall Wa has a lower resin layer 22b formed of the same material as the second planarization film 22a in the same layer, and an upper resin layer 32b formed of the same material as the edge cover 32a in the same layer. Further, as shown in Figure 6 and Figure 7 , the first outer side barrier wall Wa is provided so as to overlap with the outer peripheral end portion of the organic sealing film 37 of the sealing film 40, and is composed so as to suppress diffusion of ink of the organic sealing film 37 of the sealing film 40.

[0062] As shown in Figure 6 and Figure 7 , the second outer side barrier wall Wb has a lower resin layer 19b formed of the same material as the first planarization film 19a in the same layer, a middle resin layer 22c formed of the same material as the second planarization film 22a in the same layer, and an upper resin layer 32c formed of the same material as the edge cover 32a in the same layer.

[0063] Further, as shown in Figure 1 , the organic EL display device 50a has, in the frame region F, a first frame wiring 18h extending in a band shape in a portion of the opening of the trench G in which the width is wide, extending in a line shape on the display region D side inside the trench G, and extending toward the terminal portion T from both end portions on the opposite side of the display region D. Here, the first frame wiring 18h is electrically connected to the power supply line 21a on the display region D side of the frame region F, and inputs a high power supply voltage (ELVDD) to the terminal portion T. Further, as shown in Figure 6 and Figure 7As shown, the first border wiring 18h and the second border wiring 18i (described later) are formed of the same material on the same layer as the source electrodes 18a and 18c and the drain electrodes 18b and 18d.

[0064] In addition, such as Figure 1 As shown, the organic EL display device 50a has a second bezel wiring 18i in the bezel region F. This second bezel wiring 18i is generally C-shaped and disposed outside the groove G, extending towards the terminal portion T at both ends. Here, as... Figure 6 As shown, the second border wiring 18i is configured to be electrically connected to the second electrode 34 via the first conductive layer 31b formed in the trench G, and a low power supply voltage (ELVSS) is input at the terminal portion T. Additionally, as... Figure 6 As shown, the first conductive layer 31b and the first electrode 31a are formed in the same layer from the same material. In the frame region F, they overlap with the second frame wiring 18i and the second electrode 34, and are configured to electrically connect the second frame wiring 18i and the second electrode 34.

[0065] In addition, such as Figure 8 As shown, the organic EL display device 50a includes: a filling resin layer 8a disposed in the bend portion B of the bezel region F in such a way as to fill the slits S formed on the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17; a plurality of lead-wound wires 18j disposed on the filling resin layer 8a and the second interlayer insulating film 17; and a cover resin layer 19c disposed in such a way as to cover each lead-wound wire 18j. Furthermore, as... Figure 8 As shown, the slit S is configured as a groove extending along the extension direction of the bend B, penetrating through the base coating 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 to expose the surface of the resin substrate layer 10. Furthermore, the filling resin layer 8a is made of an organic resin material such as polyimide resin. Additionally, multiple winding wires 18j are arranged to extend parallel to each other in a direction orthogonal to the extension direction of the bend B. Here, as... Figure 8 As shown, both ends of each lead-in wiring 18j are electrically connected to the first gate conductive layer 14f and the second gate conductive layer 14g respectively via contact holes formed in the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17. Furthermore, the lead-in wiring 18j, the source electrodes 18a and 18c, and the drain electrodes 18b and 18d are formed of the same material in the same layer. Additionally, as... Figure 8 As shown, the first gate conductive layer 14f is disposed between the gate insulating film 13 and the first interlayer insulating film 15, and is electrically connected to the signal wiring (gate line 14d, source line 18f, etc.) extending in the display area D. Furthermore, as... Figure 8As shown, the second gate conductive layer 14g is provided between the gate insulating film 13 and the first interlayer insulating film 15, and is electrically connected to the terminal of the terminal portion T, for example. Further, the cover resin layer 19c and the first planarization film 19a are formed of the same material in the same layer.

[0066] Further, as shown in Figure 10 As shown, the organic EL display device 50a is provided with a plurality of peripheral light spacers 32d provided in an island shape so as to protrude upward in the drawing in the frame region F and the non-display region N. Here, each of the peripheral light spacers 32d and the edge cover 32a are formed of the same material in the same layer.

[0067] Further, as shown in Figure 9 and Figure 10 As shown, the organic EL display device 50a is provided with a separation wall Ea provided in a frame shape so as to surround the through hole H in the non-display region N.

[0068] As shown in Figure 10 The separation wall Ea is provided with a wall base portion 19da provided in the same layer as the first planarization film 19a by the same material in a frame shape of a circle, and a wall upper portion 20ba provided on the wall base portion 19da in the same layer as the third interlayer insulating film 20a by the same material in a frame shape of a circle. Here, as shown in Figure 10 The wall upper portion 20ba is provided in a gable shape so as to protrude by about 2 pm, for example, from the display region D side to the through hole H side with respect to the wall base portion 19da.

[0069] As shown in Figure 10 By the above-described separation wall Ea, the second electrode 34, (the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5) are provided on the wall upper portion 20ba so as to extend from the display region D to the through hole H, and are separated at the peripheral end portion of the wall upper portion 20ba on the through hole H side from the portion on the through hole H side. In addition, in Figure 10 the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 are not shown, but the common functional layer including the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 is also separated at the peripheral end portion of the wall upper portion 20ba on the through hole H side from the portion on the through hole H side. Here, in the non-display region N, as shown in Figure 10 The second inorganic sealing film 38 of the sealing film 40 is provided so as to cover the separation wall Ea across the first inorganic sealing film 36 of the sealing film 40. Further, as shown in Figure 10 The first inorganic sealing film 36 is provided in the non-display region N so as to contact the second interlayer insulating film 17 of the TFT layer 30 on the through hole H side of the separation wall Ea.

[0070] Further, as shown inFigure 9 As shown, the organic EL display device 50a includes a first inner blocking wall Wc and a second inner blocking wall Wd, which are respectively set in a circular frame shape in the non-display area N to surround the separation wall Ea.

[0071] like Figure 10 As shown, the first inner barrier wall Wc includes: a first resin layer 22e formed of the same material as the second planarization film 22a in the same layer; and a second resin layer 32e disposed on the first resin layer 22e and formed of the same material as the edge cover 32a in the same layer. Here, as Figure 10 As shown, the first inner barrier wall Wc is arranged to overlap with the inner peripheral end of the organic insulating film 37 constituting the sealing film 40 on the display area D side of the non-display area N.

[0072] like Figure 10 As shown, the second inner barrier wall Wd includes: a first resin layer 22f formed of the same material as the second planarization film 22a in the same layer; and a second resin layer 32f disposed on the first resin layer 22f and formed of the same material as the edge cover 32a in the same layer. Here, as Figure 9 and Figure 10 As shown, the second inner barrier wall Wd is disposed in the non-display area N between the first inner barrier wall Wc and the separation wall Ea.

[0073] like Figure 10 As shown, in the non-display area N, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are disposed in a manner that does not reach the end face of the through-hole H. Here, at the periphery of the through-hole H, as... Figure 10 As shown, the semiconductor layer 12c is provided as an etch stop portion, exposed from the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Furthermore, the semiconductor layer 12c is formed in the same layer as semiconductor layers 12a and 12b, using the same material. Figure 10 The example shown depicts an inorganic film configuration where a base coating 11 and a semiconductor layer 12c remain at the periphery of the through-hole H, forming the TFT layer 30. However, only the base coating 11 may remain. Alternatively, the base coating 11 and semiconductor layer 12c may be disposed such that they do not reach the end face of the through-hole H, exposing the resin substrate layer 10. Here, at the periphery of the through-hole H, it is preferable to form a thinner inorganic film to suppress crack propagation in the inorganic film.

[0074] In the organic EL display device 50a described above, in each sub-pixel P, a gate signal is input to the first TFT 9a through the gate line 14d, the first TFT 9a becomes in an on state, a prescribed voltage corresponding to a source signal is written to the gate 14b of the second TFT 9b and the capacitor 9d through the source line 18f, and when a light emission control signal is input to the third TFT 9c through the light emission control line 14e, the third TFT 9c becomes in an on state, a current corresponding to the gate voltage of the second TFT 9b is supplied from the power supply line 21a to the organic EL layer 33, and thus the light emitting layer 3 of the organic EL layer 33 emits light, and image display is performed. In the organic EL display device 50a, even if the first TFT 9a becomes in an off state, the gate voltage of the second TFT 9b is held by the capacitor 9d, and thus the light emission of the light emitting layer 3 is maintained by each sub-pixel P until the next frame of the gate signal is input.

[0075] Next, a manufacturing method of the organic EL display device 50a of the present embodiment will be described. Here, the manufacturing method of the organic EL display device 50a of the present embodiment includes a TFT layer forming process including a separation wall forming process, an organic EL element layer forming process, a sealing film forming process, and a through-hole forming process. In addition, Figure 11 and Figure 12 is a cross-sectional view showing a part of the separation wall forming process of the manufacturing method of the organic EL display device 50a.

[0076] <TFT layer forming process>

[0077] For example, a bottom coat film 11, the first TFT 9a, the second TFT 9b, the third TFT 9c, the capacitor 9d, the first planarization film 19a, the third interlayer insulating film 20a, the power supply line 21a, and the second planarization film 22a, and the like are formed on the surface of the resin substrate layer 10 formed on the glass substrate using a publicly known method, and thus the TFT layer 30 is formed.

[0078] Hereinafter, the separation wall forming process of forming the separation wall Ea when the first planarization film 19a and the third interlayer insulating film 20a are formed in the TFT layer forming process will be described.

[0079] First, on the substrate surface on which the source electrodes 18a and 18c and the drain electrodes 18b and 18d, and the like are formed, a photosensitive resin film is formed by, for example, applying a photosensitive polyimide resin by a spin coating method, and then the photosensitive resin film is subjected to exposure, development, and baking, and thus the first planarization film 19a is formed in the display area D, the lower resin layer 19b and the cover resin layer 19c are formed in the frame area F, and the wall base forming layer 19dab is formed in the non-display area N (see FIG. 2). Figure 11

[0080] ​Next, after forming an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like (thickness: 10 nm to 500 nm or so) on the substrate surface on which the first planarization film 19a and the like are formed by, for example, a plasma CVD (Chemical Vapor Deposition) method, the inorganic insulating film is patterned to form a third interlayer insulating film 20a in the display region D, as shown in FIG. 2A, and a wall upper portion forming layer 20bab in the non-display region N, as shown in FIG. 2B. Figure 11

[0081] Further, as shown in FIG. 2C, after forming a resist pattern R on the wall upper portion forming layer 20bab, the end portions of the wall upper portion forming layer 20bab and the wall base portion forming layer 19dab exposed from the resist pattern R are removed by, for example, dry etching, to form a wall upper portion 20ba and a wall base portion 19da, as shown in FIG. 2D. Thus, a separation wall Ea having the wall base portion 19da and the wall upper portion 20ba provided in a cornice shape on the wall base portion 19da is formed. Figure 11 Figure 12

[0082] <Organic EL device layer forming step>

[0083] On the second planarization film 22a of the TFT layer 30 formed in the above TFT layer forming step, a first electrode 31a, an edge cover 32a, an organic EL layer 33 (hole injection layer 1, hole transport layer 2, light emitting layer 3, electron transport layer 4, electron injection layer 5), a second electrode 34, and an organic EL element layer 35 are formed by a known method. Here, when the organic EL layer 23 and the second electrode 34 are formed by an evaporation method, the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 constituting the organic EL layer 23, and the second electrode 34 are formed separately from the cornice-shaped portion of the wall upper portion 20ba of the separation wall Ea on the side on which a through-hole H is to be formed later.

[0084] <Sealing film forming step>

[0085] First, on the substrate surface on which the organic EL element layer 35 formed in the above organic EL element layer forming step is formed, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like is formed by a plasma CVD method using a mask, for example, to form a first inorganic sealing film 36.

[0086] Next, an organic resin material such as an acrylic resin is deposited on the substrate surface on which the first inorganic sealing film 36 is formed by, for example, an inkjet method to form an organic sealing film 37.

[0087] ​​​Then, for the substrate on which the organic sealing film 37 is formed, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like is formed by a plasma CVD method using a mask, and a second inorganic sealing film 38 is formed, thereby forming a sealing film 40.

[0088] <Through-hole forming step>

[0089] First, after a protective sheet (not shown) is attached to the surface of the substrate on which the sealing film 40 is formed in the sealing film forming step described above, the glass substrate is peeled from the lower surface of the resin substrate layer 10 by irradiating laser light from the glass substrate side of the resin substrate layer 10, and further, the protective sheet (not shown) is attached to the lower surface of the resin substrate layer 10 from which the glass substrate has been peeled.

[0090] Next, for example, in a region overlapping the semiconductor layer 12c provided inside the separation wall Ea of the resin substrate layer 10 to which the protective sheet is attached, laser light is scanned and irradiated in a ring shape, thereby forming a through-hole H.

[0091] After the organic EL display device 50a on which the through-hole H is formed is fixed, for example, to the inside of a housing, the electronic component 60 is provided in a manner that the electronic component 60 such as a camera, a fingerprint sensor, or the like is disposed on the back surface side of the through-hole H.

[0092] As described above, the organic EL display device 50a of the present embodiment can be manufactured.

[0093] As described above, according to the organic EL display device 50a of the present embodiment, the island-shaped non-display region N on which the through-hole H is formed inside the display region D, and the separation wall Ea is provided in a frame shape along the periphery of the through-hole H. Here, the separation wall Ea has a wall base portion 19da provided in the same layer as the first planarization film 19a by the same material and provided in a frame shape, and a wall upper portion 20ba provided on the wall base portion 19da in a manner that protrudes from the display region D side toward the through-hole H side and in a manner of a roof shape, and formed in the same layer as the third interlayer insulating film 20a by the same material. Thus, the common functional layers (the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, the electron injection layer 5), and the second electrode 34 are respectively separated into the display region D side and the through-hole H side and broken to be formed, at the portion of the separation wall Ea protruding in a roof shape. Also, in order to form the separation wall Ea, it is not necessary to repeatedly perform the process of forming a resist pattern and the process of dry etching using the resist pattern, and thus the common functional layers (the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, the electron injection layer 5), and the second electrode 34 can be formed at low cost while being separated into the display region D side and the through-hole H side.

[0094] Further, according to the organic EL display device 50a of the present embodiment, the second inorganic sealing film 38 is provided so as to cover the separation wall Ea in the non-display region N with the first inorganic sealing film 36 interposed therebetween. Further, the first inorganic sealing film 36 is provided so as to be in contact with the second interlayer insulating film 17 of the TFT layer 30 in the non-display region N. Thereby, even in the non-display region N, the sealing performance brought about by the sealing film 40 can be ensured, and thus the deterioration of the organic EL layer 33 can be suppressed, and the reliability of the organic EL display device 50a can be improved.

[0095] <Second Embodiment>

[0096] Figures 13-15 A second embodiment of a display device of the present application is described. Herein, Figure 13 is a cross-sectional view of a non-display region N of an organic EL display device 50b of the present embodiment, and is a view corresponding to Figure 10 of FIG. 1. Further, Figure 14 and Figure 15 are cross-sectional views of a part of a separation wall forming step of a manufacturing method of the organic EL display device 50b, and are views corresponding to Figure 11 and Figure 12 of FIG. 2. In addition, in each of the following embodiments, the same reference numerals are attached to the same parts as Figures 1-12 , and detailed description thereof is omitted.

[0097] In the above first embodiment, the organic EL display device 50a in which the upper surface of the wall base 19da of the separation wall Ea is formed in parallel with the upper surface of the resin substrate layer 10 was exemplified, but in the present embodiment, the organic EL display device 50b in which the upper surface of the wall base 19db of the separation wall Eb is formed so as to be inclined with respect to the upper surface of the resin substrate layer 10 is exemplified.

[0098] The organic EL display device 50b has, similarly to the organic EL display device 50a of the above first embodiment, a display region D in which an island-shaped non-display region N is provided inside, and a frame region F provided around the display region D.

[0099] The organic EL display device 50b has, similarly to the organic EL display device 50a of the above first embodiment, a resin substrate layer 10, a TFT layer 30 provided on the resin substrate layer 10, an organic EL element layer 35 provided on the TFT layer 30, and a sealing film 40 provided on the organic EL element layer 35.

[0100] The display region D and the frame region F in the organic EL display device 50b are substantially the same as the display region D and the frame region F in the organic EL display device 50a of the above first embodiment in terms of configuration.

[0101] The organic EL display device 50b is the same as the organic EL display device 50a of the first embodiment described above, and as shown in FIG. 1B, in the non-display region N, a separation wall Eb is provided in a circular frame shape so as to surround the through-hole H. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a.

[0102] As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a.

[0103] As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a.

[0104] As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a. Figure 13 As shown in FIG. 2B, the separation wall Eb is provided with a wall base portion 19db provided in the same layer as the first planarization film 19a by the same material in a circular frame shape, and a wall upper portion 20bb provided on the wall base portion 19db in a circular frame shape by the same material as the third interlayer insulating film 20a.

[0105] AsFigure 13 As shown, in the non-display region N, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are provided in a manner not reaching the end surface of the through-hole H. Here, in the peripheral portion of the through-hole H, the semiconductor layer 12c is provided as an etching stopper in a manner exposed from the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Figure 13 As shown, the semiconductor layer 12c is provided as an etching stopper in a manner exposed from the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0106] The above-described organic EL display device 50b, like the organic EL display device 50a of the above-described first embodiment, has flexibility, and in each sub-pixel P, image display is performed by causing the light-emitting layer 3 of the organic EL layer 33 to appropriately emit light via the first TFT 9a, the second TFT 9b, and the third TFT 9c.

[0107] The organic EL display device 50b of the present embodiment can be manufactured by changing the shape of the wall base formation layer 19dab to the shape of the wall base formation layer 19dbb in the TFT layer formation process of the manufacturing method of the organic EL display device 50a of the above-described first embodiment to form the separation wall Eb (see Figure 14 and Figure 15 ).

[0108] Specifically, first, on the substrate surface on which the source electrodes 18a and 18c and the drain electrodes 18b and 18d and the like are formed, a photosensitive resin film is formed by, for example, applying a photosensitive polyimide resin by a spin coating method, and then by performing exposure, development, and baking on the photosensitive resin film, a first planarization film 19a is formed in the display region D, a lower resin layer 19b and a cover resin layer 19c are formed in the frame region F, and a wall base formation layer 19dbb is formed in the non-display region N (see Figure 14 ). In addition, when the above-described photosensitive resin film is exposed, by performing half exposure on the portion to be the wall base formation layer 19dbb using a half-tone mask, a gray-tone mask, or the like, the wall base formation layer 19dbb having a cross section in the shape of a mountain can be formed.

[0109] Next, on the substrate surface on which the first planarization film 19a and the like are formed, an inorganic insulating film is formed by, for example, forming a silicon oxynitride film (thickness: 10 nm to 500 nm or so) by a plasma CVD method, and then the inorganic insulating film is patterned, thereby forming a third interlayer insulating film 20a in the display region D, and as shown in Figure 14 , a wall upper portion formation layer 20bb is formed in the non-display region N.

[0110] Further, as shown in Figure 14As shown, after the resist pattern R is formed on the wall upper portion formation layer 20bbb, the end portions of the wall upper portion formation layer 20bbb and the wall base portion formation layer 19dbb exposed from the resist pattern R are removed by dry etching, for example, so that the wall upper portion 20bb and the wall base portion 19db are formed as shown in FIG. 6B. Figure 15 As shown, the wall upper portion 20bb and the wall base portion 19db are formed. Thus, the separation wall Eb is formed, which has the wall base portion 19db and the wall upper portion 20bb provided in a roof shape on the wall base portion 19db.

[0111] As described above, according to the organic EL display device 50b of the present embodiment, the island-shaped non-display region N in which the through-hole H is formed inside the display region D, the separation wall Eb is provided in a circular frame shape along the periphery of the through-hole H. Here, the separation wall Eb has the wall base portion 19db provided in a frame shape by the same material as the first planarization film 19a in the same layer, and the wall upper portion 20bb provided in a roof shape on the wall base portion 19db in a manner to protrude from the display region D side toward the through-hole H side, and formed by the same material as the third interlayer insulating film 20a in the same layer. Thus, the common functional layers (hole injection layer 1, hole transport layer 2, electron transport layer 4, electron injection layer 5) and the second electrode 34 are broken to be formed on the display region D side and the through-hole H side, respectively, at the portion of the separation wall Eb protruding in a roof shape. Also, in order to form the separation wall Eb, it is not necessary to repeatedly perform the process of forming a resist pattern and the process of dry etching using the resist pattern, and thus the common functional layers (hole injection layer 1, hole transport layer 2, electron transport layer 4, electron injection layer 5) and the second electrode 34 can be formed on the display region D side and the through-hole H side, respectively, at low cost.

[0112] Further, according to the organic EL display device 50b of the present embodiment, the second inorganic sealing film 38 is provided in a manner to cover the separation wall Eb through the first inorganic sealing film 36 in the non-display region N. Further, the first inorganic sealing film 36 is provided in a manner to contact the second interlayer insulating film 17 of the TFT layer 30 in the non-display region N. Thus, even in the non-display region N, it is possible to ensure the sealing performance by the sealing film 40, and thus it is possible to suppress the deterioration of the organic EL layer 33, and it is possible to improve the reliability of the organic EL display device 50b.

[0113] Further, according to the organic EL display device 50b of the present embodiment, since the upper surface of the wall base portion 19db is formed so as to be inclined higher on the side of the through-hole H than on the side of the display region D, and the wall upper portion 20bb is provided so as to be inclined at the same angle as the inclination of the upper surface of the wall base portion 19db and protrude, the amount of lateral shift when dry etching the wall base portion forming layer 19dbb can be reduced. Here, in the organic EL display device 50a of the above-described first embodiment, for example, in order to make the wall upper portion 20ba protrude by 2 μm, a lateral shift of 2 μm is required, whereas in the organic EL display device 50b of the present embodiment, in order to make the wall base portion 19db protrude by 2 μm, a lateral shift of 1.7 μm is sufficient.

[0114] "Third Embodiment"

[0115] Figures 16-18 A third embodiment of the display device of the present application is described. Here, Figure 16 is a cross-sectional view of a non-display region N of the organic EL display device 50c of the present embodiment, and is a view corresponding to Figure 10 of the above-described first embodiment. Further, Figure 17 and Figure 18 are cross-sectional views of a part of the separation wall forming step of the manufacturing method of the organic EL display device 50c, and are views corresponding to Figure 11 and Figure 12 of the above-described first embodiment.

[0116] In the above-described second embodiment, the organic EL display device 50b provided with the separation wall Eb having the wall base portion 19db formed on the second interlayer insulating film 17 was exemplified, but in the present embodiment, the organic EL display device 50c provided with the separation wall Ec having the wall base portion 19dc formed on the second interlayer insulating film 17 with the metal layer 18k interposed therebetween is exemplified.

[0117] The organic EL display device 50c is provided with a display region D in which an island-shaped non-display region N is provided inside, and a frame region F provided around the display region D, similarly to the organic EL display device 50a of the above-described first embodiment.

[0118] The organic EL display device 50c is provided with a resin substrate layer 10, a TFT layer 30 provided on the resin substrate layer 10, an organic EL element layer 35 provided on the TFT layer 30, and a sealing film 40 provided on the organic EL element layer 35, similarly to the organic EL display device 50a of the above-described first embodiment.

[0119] The display region D and the frame region F of the organic EL display device 50c are substantially the same as the display region D and the frame region F of the organic EL display device 50a of the above-described first embodiment in terms of their configurations.

[0120] The organic EL display device 50c is the same as the organic EL display device 50a of the first embodiment described above, and as shown in FIG. 1C, in the non-display region N, a separation wall Ec is provided in a circular frame shape so as to surround the through-hole H. Figure 16 As shown in FIG. 1C, in the non-display region N, the separation wall Ec is provided in a circular frame shape so as to surround the through-hole H.

[0121] As shown in FIG. 1C, the separation wall Ec is provided with a wall base portion 19dc provided in a circular frame shape on the same layer as the first planarization film 19a by the same material, and a wall upper portion 20bc provided on the wall base portion 19dc in a circular frame shape on the same layer as the third interlayer insulating film 20a by the same material. Figure 16 As shown in FIG. 1C, the wall base portion 19dc is formed so as to be inclined at an angle of, for example, 30° with respect to the upper surface of the resin substrate layer 10 on the through-hole H side (right side in the drawing) than on the display region D side (left side in the drawing). Further, as shown in FIG. 1C, the wall upper portion 20bc is provided in a gable shape so as to be inclined at the angle of the upper surface of the wall base portion 19dc (for example, 30°) from the display region D side toward the through-hole H side, and protrude by, for example, 2 μm or so, with respect to the wall base portion 19dc. Further, in the separation wall Ec, on the resin substrate layer 10 side of the through-hole H side of the wall base portion 19dc, as shown in FIG. 1C, a metal layer 18k is provided in a circular frame shape so as to surround the through-hole H. Further, as shown in FIG. 1C, the metal layer 18k is exposed from the wall base portion 19dc on the through-hole H side. Further, the metal layer 18k is provided so as to overlap with the end portion on the through-hole H side of the wall upper portion 20bc. In addition, the metal layer 18k is composed of a metal laminated film in which a titanium film (thickness of 10 nm to 200 nm or so), an aluminum film (thickness of 100 nm to 1000 nm or so), and a titanium film (thickness of 10 nm to 200 nm or so) are laminated in this order, and is formed on the same layer as the wiring layers such as the source electrodes 18a and 18c and the drain electrodes 18b and 18d by the same material. Figure 16 Figure 16 Figure 16 Figure 16

[0122] As shown in FIG. 1C, by the above-described separation wall Ec, the second electrode 34, (the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5) are provided on the wall upper portion 20bc so as to extend from the display region D to the through-hole H, and are separated at the peripheral end portion on the through-hole H side of the wall upper portion 20bc from the portion on the through-hole H side. In addition, in the Figure 16 Figure 16 Figure 16 ​​​​​​As shown, the second inorganic sealing film 38 of the sealing film 40 is provided so as to cover the separation wall Ec with the first inorganic sealing film 36 of the sealing film 40 interposed therebetween. Further, as shown Figure 16 As shown, the first inorganic sealing film 36 is provided so as to contact the second interlayer insulating film 17 of the TFT layer 30 on the side of the through-hole H of the separation wall Ec in the non-display region N.

[0123] The organic EL display device 50c is similar to the organic EL display device 50a of the above-described first embodiment, and as shown Figure 16 As shown, in the non-display region N, the first inner side barrier wall Wc and the second inner side barrier wall Wd are provided in the form of a frame that is circular and surrounds the separation wall Ec, respectively.

[0124] In the non-display region N, as shown Figure 16 As shown, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are provided so as not to reach the end surface of the through-hole H. Here, as shown Figure 16 As shown, the semiconductor layer 12c is provided as an etching barrier portion in a manner so as to be exposed from the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on the peripheral edge portion of the through-hole H.

[0125] The above-described organic EL display device 50c, like the organic EL display device 50a of the above-described first embodiment, is flexible, and in each sub-pixel P, image display is performed by causing the light emitting layer 3 of the organic EL layer 33 to emit light appropriately via the first TFT 9a, the second TFT 9b, and the third TFT 9c.

[0126] The organic EL display device 50c of the present embodiment can be manufactured by, in the TFT layer forming process of the manufacturing method of the organic EL display device 50a of the above-described first embodiment, forming the metal layer 18k when forming the source electrodes 18a and 18c and the drain electrodes 18b and 18d, and changing the shape of the wall base forming layer 19dab to the shape of the wall base forming layer 19dcb to form the separation wall Ec (see Figure 17 and Figure 18 ).

[0127] Specifically, first, the metal layer 18k is formed in the non-display region N when forming the source electrodes 18a and 18c and the drain electrodes 18b and 18d.

[0128] Next, on the substrate surface where active electrodes 18a and 18c and drain electrodes 18b and 18d are formed, a photosensitive polyimide resin is coated, for example, by spin coating, to form a photosensitive resin film. This photosensitive resin film is then exposed, developed, and fired to form a first planarization film 19a in the display area D, a lower resin layer 19b and a cover resin layer 19c in the border area F, and a wall base formation layer 19dcb in the non-display area N (see reference). Figure 17 In addition, when exposing the above-mentioned photosensitive resin film, by using a halftone mask, a grayscale mask, or the like to half-expose the portion that will become the wall base formation layer 19dcb, a wall base formation layer 19dcb with a mountain-shaped cross-section can be formed.

[0129] Next, on the substrate surface where the first planarization film 19a is formed, for example, a silicon oxynitride film (with a thickness of about 10 nm to 500 nm) is formed by plasma CVD. After forming an inorganic insulating film, the inorganic insulating film is patterned to form a third interlayer insulating film 20a in the display area D. Figure 17 As shown, a layer 20bcb is formed on the upper part of the wall in the non-display area N.

[0130] Furthermore, such as Figure 17 As shown, after the resist pattern R is formed on the upper wall layer 20bcb, the ends of the upper wall layer 20bcb and the wall base layer 19dcb exposed from the resist pattern R are removed, for example, by dry etching, thereby achieving the desired effect. Figure 18 As shown, an upper wall portion 20bc and a wall base portion 19dc are formed. Thus, a separation wall Ec is formed, which has a wall base portion 19dc and an upper wall portion 20bc provided in an eave-like shape on the wall base portion 19dc.

[0131] As described above, according to the organic EL display device 50c of the present embodiment, the island-shaped non-display region N in which the through-hole H is formed inside the display region D, the separation wall Ec is provided in a frame shape along the circumferential edge of the through-hole H. Here, the separation wall Ec has a wall base portion 19dc provided in a frame shape along with the first planarization film 19a provided in the same layer by the same material, and a wall upper portion 20bc provided in a gable shape on the wall base portion 19dc in a manner of protruding from the display region D side toward the through-hole H side, and formed in the same layer with the third interlayer insulating film 20a formed by the same material. Thus, the common functional layers (hole injection layer 1, hole transport layer 2, electron transport layer 4, electron injection layer 5) and the second electrode 34 are broken to be formed separately on the display region D side and the through-hole H side at the portion of the separation wall Ec protruding in a gable shape. Also, in order to form the separation wall Ec, it is not necessary to repeatedly perform the process of forming a resist pattern and the process of dry etching using the resist pattern, and thus the common functional layers (hole injection layer 1, hole transport layer 2, electron transport layer 4, electron injection layer 5) and the second electrode 34 can be formed at low cost while being separated on the display region D side and the through-hole H side.

[0132] Further, according to the organic EL display device 50c of the present embodiment, the second inorganic sealing film 38 is provided in a manner of covering the separation wall Ec through the first inorganic sealing film 36 in the non-display region N. Further, the first inorganic sealing film 36 is provided in a manner of contacting the second interlayer insulating film 17 of the TFT layer 30 in the non-display region N. Thus, even in the non-display region N, it is possible to ensure the sealing performance by the sealing film 40, and thus it is possible to suppress the deterioration of the organic EL layer 33, and it is possible to improve the reliability of the organic EL display device 50c.

[0133] Further, according to the organic EL display device 50c of the present embodiment, the upper surface of the wall base portion 19dc is formed in a manner of being inclined higher on the through-hole H side than on the display region D side, and the wall upper portion 20bc is provided in a manner of being inclined at the inclination angle of the upper surface of the wall base portion 19dc and protruding, and thus it is possible to reduce the amount of side shift when dry etching the wall base formation layer 19dcb.

[0134] Further, according to the organic EL display device 50c of the present embodiment, the metal layer 18k is provided in a frame shape in a circular shape on the resin substrate layer 10 side of the through-hole H side of the wall base portion 19dc in a manner of surrounding the through-hole H, and thus, compared with the organic EL display device 50b of the second embodiment described above, it is possible to easily form the wall base formation layer 19dcb in a gable shape in cross section.

[0135] <Other Embodiments>

[0136] In each of the above embodiments, an organic EL layer of a 5-layer stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer was exemplified, but the organic EL layer may, for example, be a 3-layer stacked structure of a hole injection layer and a hole transport layer, a light-emitting layer, and an electron transport layer and an electron injection layer.

[0137] Further, in each of the above embodiments, an organic EL display device in which the first electrode serves as an anode and the second electrode serves as a cathode was exemplified, but the present application is also applicable to an organic EL display device in which the stacked structure of the organic EL layer is reversed, the first electrode serves as a cathode, and the second electrode serves as an anode.

[0138] Further, in each of the above embodiments, an organic EL display device in which the electrode of the TFT connected to the first electrode serves as a drain was exemplified, but the present application is also applicable to an organic EL display device in which the electrode of the TFT connected to the first electrode is referred to as a source.

[0139] Further, in each of the above embodiments, an organic EL display device was exemplified as a display device, but the present application is applicable to a display device provided with a plurality of light-emitting elements driven by a current. For example, the present application is applicable to a display device provided with a light-emitting element using a quantum dot-containing layer, i.e., a QLED (Quantum-dot light emitting diode).

[0140] Industrial Applicability

[0141] As described above, the present application is useful for a flexible display device.

[0142] Explanation of Reference Numerals

[0143] D: Display region

[0144] Ea, Eb, Ec: Separation wall

[0145] H: Through hole

[0146] N: Non-display region

[0147] P: Sub-pixel

[0148] Wa: First outer side barrier wall

[0149] Wb: Second outer side barrier wall

[0150] Wc: First inner side barrier wall

[0151] Wd: Second inner side barrier wall

[0152] 1: Hole injection layer (Common functional layer)

[0153] 2: Hole transport layer (Common functional layer)

[0154] 4: Electron transport layer (common functional layer)

[0155] 5: Electron injection layer (common functional layer)

[0156] 10: Resin substrate layer (base substrate)

[0157] 11: Primer film (other inorganic insulating film)

[0158] 13: Gate insulating film (other inorganic insulating film)

[0159] 15: First interlayer insulating film (other inorganic insulating film)

[0160] 17: Second interlayer insulating film (other inorganic insulating film)

[0161] 18f: Source line (wiring layer)

[0162] 18k: Metal layer

[0163] 19a: First planarization film

[0164] 19da, 19db, 19dc: Wall base

[0165] 20a: Third interlayer insulating film (inorganic insulating film)

[0166] 20ba, 20bb, 20bc: Wall upper portion

[0167] 30: TFT layer (thin film transistor layer)

[0168] 31a: First electrode

[0169] 33: Organic EL layer (organic electroluminescent layer, functional layer)

[0170] 34: Second electrode

[0171] 35: Organic EL element layer (light emitting element layer)

[0172] 36: First inorganic sealing film

[0173] 37: Organic sealing film

[0174] 38: Second inorganic sealing film

[0175] 40: Sealing film

[0176] 50a, 50b, 50c: Organic EL display device

[0177] 60: Electronic component

Claims

1. A display device, characterized by comprising: It has: a base substrate; a thin film transistor layer provided on the base substrate, sequentially laminated with a planarization film and an inorganic insulating film; and a light emitting element layer provided on the thin film transistor layer, sequentially laminated with a plurality of first electrodes, a plurality of functional layers, and a common second electrode corresponding to a plurality of sub-pixels constituting a display region, The display device includes the display region and a non-display region, the non-display region is located inside the display region, and the non-display region is provided in an island shape, A through hole is formed in the non-display region, which penetrates in the thickness direction of the base substrate, A separation wall is provided in the non-display region in a manner surrounding the through hole, The separation wall includes: a wall base provided in the same layer as the planarization film by the same material and provided in a frame shape; and a wall upper part provided on the wall base in a manner protruding from the display region side to the through hole side and formed in the same layer as the inorganic insulating film by the same material, The upper surface of the wall base is formed in a manner inclined with the through hole side higher than the display region side, The wall upper part is provided in a manner protruding from the inclined angle of the upper surface of the wall base.

2. The display device according to claim 1, wherein The plurality of functional layers include a common functional layer provided commonly for the plurality of sub-pixels, The common functional layer and the second electrode are provided on the separation wall in a manner from the display region to the non-display region, and the end portion of the wall upper part on the through hole side is separated from the portion on the through hole side.

3. The display device according to claim 1, wherein A sealing film is provided on the light emitting element layer, which is sequentially laminated with a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film, The second inorganic sealing film is provided in a manner covering the separation wall in the non-display region through the first inorganic sealing film.

4. The display device according to claim 3, wherein The thin film transistor layer has another inorganic insulating film provided on the base substrate side of the planarization film, The first inorganic sealing film is provided in a manner contacting the other inorganic insulating film in the non-display region.

5. The display device according to claim 3, wherein An inner side blocking wall is provided in a frame shape in the non-display region, which surrounds the separation wall and overlaps with the inner peripheral end portion of the organic sealing film.

6. The display device according to any one of claims 3 to 5, wherein A frame region is provided around the display region, An outer side blocking wall is provided in a frame shape in the frame region, which is provided in a manner surrounding the display region and overlapping with the outer peripheral end portion of the organic sealing film.

7. The display device according to claim 1, wherein The thin film transistor layer has a wiring layer provided on the base substrate side of the planarization film, In the separation wall, a metal layer is provided on the base substrate side of the through-hole side of the wall base, the metal layer being formed in the same layer as the wiring layer from the same material.

8. The display device according to claim 7, wherein The through-hole side of the metal layer is exposed from the wall base.

9. The display device according to claim 7, wherein The metal layer is provided so as to overlap with an end portion of the through-hole side of the wall upper portion.

10. The display device according to claim 7, wherein The metal layer is provided in a frame shape so as to surround the through-hole.

11. The display device according to any one of claims 7 to 10, wherein The metal layer is formed of a metal laminate film in which a plurality of metal films are laminated.

12. The display device according to claim 1, wherein An electronic component is provided in the through-hole.

13. The display device according to claim 12, wherein The electronic component is a camera or a fingerprint sensor.

14. The display device according to claim 1, wherein Each of the functional layers is an organic electroluminescent layer.

Images