Substrate processing method, semiconductor device manufacturing method, substrate processing device and recording medium

Abstract

The present invention provides a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing device and a recording medium, which can improve the step coverage performance of a film formed on a substrate. The substrate processing method of the present invention includes: (a1) a process of supplying a processing gas in a manner that the processing gas is transported to an edge region of the substrate faster than the processing gas is transported to a central region of the substrate, (a2) a process of supplying a processing gas in a manner that the processing gas is transported to a central region of the substrate faster than the processing gas is transported to an edge region of the substrate, and (b) a process of supplying a reaction gas to the substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing device, and a recording medium. Background Art

[0002] Patent document 1 discloses a technology in which, as a process in the manufacturing process of a semiconductor device, an inert gas or a hydrogen-containing gas is supplied to a substrate together with a raw gas, so that the flow rate of the raw gas flowing in a direction parallel to the substrate surface is greater than the flow rate of the inert gas flowing in a direction parallel to the substrate surface in the process of purging a processing container.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2011-129879 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In recent years, due to the miniaturization of equipment, the area of ​​components has been reduced, and the aspect ratio of recesses such as grooves formed on substrates has increased. It is necessary to improve the step coverage performance of film formation on substrates with deeper recesses. In order to improve the step coverage performance, it is necessary to fully supply gas to the lower part of the recess. In order to improve the step coverage performance, it is necessary to fully supply gas to the lower part of the recess, and at the same time, suppress the supply amount of processing gas to the upper part of the equipment.

[0008] An object of the present disclosure is to provide a technology capable of improving the step coverage performance of a film formed on a substrate.

[0009] Methods for solving problems

[0010] According to one embodiment of the present disclosure, a technology is provided, comprising: (a1) a process of supplying a processing gas in a manner that the processing gas is delivered to an edge region of a substrate faster than the processing gas is delivered to a central region of the substrate, (a2) a process of supplying a processing gas in a manner that the processing gas is delivered to the central region of the substrate faster than the processing gas is delivered to an edge region of the substrate, and (b) a process of supplying a reaction gas to the above-mentioned substrate.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to improve the step coverage property of a film formed on a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a longitudinal sectional view schematically showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0014] Figure 2 Yes Display Figure 1 A cross-sectional view of the reaction tube showing details of the gas supply unit.

[0015] Figure 3 Yes Display Figure 2 A diagram showing details of the gas supply holes in the nozzle.

[0016] Figure 4 middle, Figure 4 (A)~ Figure 4 (C) is a diagram showing an example of the chemical structural formula of the raw material gas according to one embodiment of the present disclosure.

[0017] Figure 5 This is a schematic configuration diagram of a controller of a substrate processing apparatus according to an embodiment of the present disclosure, and is a diagram showing a control system of the controller using a block diagram.

[0018] Figure 6 is a diagram showing a substrate processing process according to one embodiment of the present disclosure.

[0019] Figure 7 Yes Display Figure 6 Flow chart showing details of the intermediate film treatment process.

[0020] Figure 8 Yes Display Figure 7 Flowchart showing details of the raw material gas supply.

[0021] Fig. 9 middle, Fig. 9 (A) is a diagram showing the partial pressure of SiCl2 from the gas supply side to the exhaust side for the raw material gas edge region supply and the raw material gas central region supply, Fig. 9 (B) is a diagram showing the partial pressure of HCDS from the gas supply side to the exhaust side in each of the raw gas edge region supply and the raw gas central region supply.

[0022] Fig.10 Yes Description Figure 8 Diagram of the supply of raw gas to the edge area.

[0023] Fig.11 Yes Description Figure 8 Diagram of the central area supply of raw gas.

[0024] Fig.12 middle, Fig.12 (A) is displayed Fig.10 The gas velocity distribution diagram is shown in Figure 2. Fig.12 (B) is displayed Fig.11 Graph of the gas velocity distribution in .

[0025] Fig.13 Yes Description Figure 7 Diagram of the reaction gas supply.

[0026] S: substrate, 10: substrate processing device, 210: reaction tube, 600: controller. DETAILED DESCRIPTION

[0027] Below, refer to Figures 1 to 13 The drawings used in the following description are schematic diagrams, and the dimensional relationships and ratios of the elements shown in the drawings may not be consistent with the actual situation. In addition, the dimensional relationships and ratios of the elements between multiple drawings may not be consistent.

[0028] (1) Configuration of substrate processing apparatus

[0029] use Figure 1 The configuration of the substrate processing apparatus 10 will be described.

[0030] The substrate processing apparatus 10 has a reaction tube housing chamber 206, and in the reaction tube housing chamber 206 there are: a cylindrical reaction tube 210 extending in the vertical direction, a heater 211 as a heating unit (furnace body) provided on the outer periphery of the reaction tube 210, a gas supply structure 212 as a gas supply unit, and a gas exhaust structure 213 as a gas exhaust unit. The gas supply unit may also include an upstream side rectifying unit 214, nozzles 223, 224, 225 described later. In addition, the gas exhaust unit may also include a downstream side rectifying unit 215 described later.

[0031] The gas supply structure 212 is disposed upstream of the reaction tube 210 in the direction of gas flow, and gas is supplied from the gas supply structure 212 into the reaction tube 210, and gas is supplied from a horizontal direction relative to the substrate S. The gas exhaust structure 213 is disposed downstream of the reaction tube 210 in the direction of gas flow, and gas in the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas supply structure 212, the interior of the reaction tube 210, and the gas exhaust structure 213 are connected in the horizontal direction.

[0032] An upstream side rectifying section 214 for regulating the flow of gas supplied from the gas supply structure 212 is provided on the upstream side of the reaction tube 210 between the reaction tube 210 and the gas supply structure 212. In addition, a downstream side rectifying section 215 for regulating the flow of gas exhausted from the reaction tube 210 is provided on the downstream side of the reaction tube 210 between the reaction tube 210 and the gas exhaust structure 213. The lower end of the reaction tube 210 is supported by a header 216.

[0033] The reaction tube 210, the upstream rectifying section 214, and the downstream rectifying section 215 are continuous structures, and are formed of materials such as quartz, SiC, etc. They are composed of heat-transmitting members that can transmit the heat radiated from the heater 211. The heat of the heater 211 is used to heat the substrate S and the gas.

[0034] The gas supply structure 212 has a distribution unit 125 connected to the gas supply pipe 251, the gas supply pipe 261, and the gas supply pipe 271 and distributes the gas supplied from each gas supply pipe. A nozzle 223, a nozzle 224, and a nozzle 225 are provided on the downstream side of the distribution unit 125. The downstream sides of the gas supply pipes 251, the gas supply pipes 261, and the gas supply pipes 271 are connected to a plurality of nozzles 223, 224, and 225 via the distribution unit 125. The nozzles 223, 224, and 225 are arranged in parallel in a substantially horizontal manner. In addition, a plurality of these nozzles 223, 224, and 225 are arranged in the vertical direction, respectively, at positions corresponding to the substrate S. Each nozzle is also referred to as a gas ejection unit.

[0035] The distribution unit 125 is configured such that gas is supplied from the gas supply pipe 251 to the plurality of nozzles 223, gas is supplied from the gas supply pipe 261 to the plurality of nozzles 224, and gas is supplied from the gas supply pipe 271 to the plurality of nozzles 225. For example, each combination of the gas supply pipe and the nozzle constitutes a passage for gas flow. In this way, the gases supplied from the gas supply pipes are not mixed, and thus the generation of particles that may be generated due to the mixing of the gases in the distribution unit 125 can be suppressed.

[0036] The upstream side rectifying section 214 has a frame 227 and a partition plate 226. The partition plate 226 extends in the horizontal direction. The horizontal direction referred to here means the side wall direction of the frame 227. A plurality of partition plates 226 are arranged in the vertical direction. The partition plate 226 is fixed to the side wall of the frame 227, and is configured so that the gas cannot pass through the partition plate 226 to move to the adjacent area below or above. By preventing such non-passing, the gas flow described later can be surely formed.

[0037] The partition plates 226 are continuous structures extending in the horizontal direction and having no holes. Each partition plate 226 is provided at a position corresponding to each substrate S. The nozzles 223 , 224 , and 225 are arranged between the partition plates 226 and between the partition plates 226 and the frame 227 .

[0038] The gas ejected from the nozzles 223, 224, and 225 is supplied to the surface of the substrate S. That is, from the perspective of the substrate S, the gas is supplied from the lateral direction of the substrate S. Since the partition plate 226 is a continuous structure extending in the horizontal direction and having no holes, the movement of the main flow of the gas in the vertical direction is suppressed and moves in the horizontal direction. Therefore, the pressure loss of the gas reaching each substrate S is uniformed in the entire vertical direction.

[0039] The downstream side rectifying part 215 is configured such that the top is higher than the uppermost substrate S and the bottom is lower than the lowermost substrate S arranged in the substrate support 300 when the substrate S is supported by the substrate support 300 described later. The substrate support 300 is used as a substrate holding part for holding the substrate S.

[0040] The downstream side rectifying section 215 has a frame 231 and a partition plate 232. The partition plate 232 extends in the horizontal direction. The horizontal direction referred to here means the direction of the side wall of the frame 231. Furthermore, a plurality of partition plates 232 are arranged in the vertical direction. The partition plate 232 is fixed to the side wall of the frame 231, and is configured so that the gas cannot move across the partition plate 232 to the adjacent area below or above. By preventing the gas from crossing, the gas flow described later can be reliably formed. A flange 233 is provided on the side of the frame 231 that contacts the gas exhaust structure 213.

[0041] The partition plate 232 is a continuous structure extending in the horizontal direction and having no holes. The partition plate 232 is set at a position corresponding to each substrate S and corresponding to the position of each partition plate 226. The corresponding partition plates 226 and partition plates 232 are expected to have the same height. Furthermore, when processing the substrate S, it is desired to align the height of the substrate S with the height of the partition plates 226 and 232. With such a structure, the gas supplied from each nozzle forms a horizontal flow through the substrate S and the partition plate 232 as shown by the arrows in the figure. By making the partition plate 232 such a structure, the pressure loss of the gas discharged from each substrate S can be uniformed. Therefore, with respect to the gas flow of the gas passing through each substrate S, while the flow in the vertical direction is suppressed, a flow is formed in the horizontal direction toward the gas exhaust structure 213.

[0042] By setting the partition plate 226 and the partition plate 232, the pressure loss in the vertical direction of each substrate S in the upstream and downstream can be uniformed, so that a horizontal gas flow in which the flow in the vertical direction is suppressed can be effectively formed on the partition plate 226, the substrate S, and the partition plate 232.

[0043] The gas exhaust structure 213 is disposed downstream of the downstream side rectifying section 215. The gas exhaust structure 213 is mainly composed of a frame 241 and a gas exhaust pipe connecting section 242. A flange 243 is provided on the downstream side rectifying section 215 side of the frame 241. The gas exhaust structure 213 is made of metal, and the downstream side rectifying section 215 is made of quartz, so the flange 233 and the flange 243 are fixed by bolts or the like via a buffer material such as an O-ring. It is desirable to arrange the flange 243 on the outside of the heater 211 so as to suppress the influence of the heater 211 on the O-ring.

[0044] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The frame 231 and the frame 241 are highly continuous structures. The top of the frame 231 is configured to be at the same height as the top of the frame 241, and the bottom of the frame 231 is configured to be at the same height as the bottom of the frame 241. On the downstream side of the frame 241, an exhaust hole 244 is formed on the lower side or in the horizontal direction. The gas exhaust structure 213 is provided in the lateral direction of the reaction tube 210, and is a lateral exhaust structure for exhausting gas from the lateral direction of the substrate S.

[0045] The gas passing through the downstream side rectifying portion 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure 213 does not have a structure such as a partition plate, the gas flows toward the exhaust hole 244 in a vertical direction.

[0046] The substrate support 300 includes a partition support portion 310 and a base portion 311, and is accommodated in the reaction tube 210. The substrate S is arranged directly below the inner wall of the top plate of the reaction tube 210. In addition, the substrate support 300 transfers the substrate S through a substrate carrying port (not shown) in the transfer chamber 217 by a vacuum transfer robot, or transports the transferred substrate S to the inside of the reaction tube 210 to form a thin film on the surface of the substrate S. The substrate carrying port is provided, for example, at the side wall of the transfer chamber 217.

[0047] In the partition support part 310, a plurality of disk-shaped partitions 314 are fixed at a predetermined interval. Moreover, there is a structure for supporting the substrate S at a predetermined interval between the partitions 314. The partition 314 is arranged directly below the substrate S, and is arranged on either or both of the upper part and the lower part of the substrate S. The partition 314 blocks the space between the substrates S.

[0048] A plurality of substrates S are placed at predetermined intervals on the substrate support 300. The predetermined intervals between the plurality of substrates S placed on the substrate support 300 are the same as the upper and lower intervals of the partitions 314 fixed to the partition support part 310. The diameter of the partitions 314 is formed larger than the diameter of the substrates S.

[0049] The substrate support 300 supports a plurality of (e.g., 5) substrates S in multiple stages in the vertical direction (perpendicular direction). Here, an example in which 5 substrates S are supported by the substrate support 300 is shown, but the present invention is not limited thereto. For example, a substrate support 300 capable of supporting about 5 to 50 substrates S may also be configured. The partition 314 of the partition support portion 310 is also referred to as a spacer.

[0050] The substrate support 300 is driven in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotation direction of the central circumference of the substrate S supported by the substrate support 300 by the vertical direction driving mechanism 400 .

[0051] The transfer chamber 217 is provided at the lower part of the reaction tube 210 via the manifold 216. In the transfer chamber 217, a vacuum transfer robot places (mounts) a substrate S on a substrate support (hereinafter, sometimes also referred to as a wafer box) 300 via a substrate carrying port, or a vacuum transfer robot takes the substrate S out of the substrate support 300.

[0052] The transfer chamber 217 can accommodate a vertical direction driving mechanism unit 400 that constitutes a first driving unit that drives the substrate support 300 in the vertical direction and the rotational direction. Figure 1 The state in which the substrate support member 300 is lifted by the up-and-down direction driving mechanism part 400 and accommodated in the reaction tube 210 is shown in FIG.

[0053] The up-down driving mechanism unit 400 constituting the first driving unit includes, as driving sources, an up-down driving motor 410, a rotation driving motor 430 and a wafer box up-down mechanism 420, which has a linear actuator as a substrate support lifting mechanism for driving the substrate support 300 in the up-down direction.

[0054] The up-and-down driving motor 410, which is a lifting mechanism of the partition support part, drives the ball screw 411 by rotation, so that the nut 412 screwed to the ball screw 411 moves up and down along the ball screw 411. As a result, the partition support part 310 and the substrate support member 300 are driven in the up-and-down direction between the reaction tube 210 and the transfer chamber 217 together with the bottom plate 402 to which the nut 412 is fixed. The bottom plate 402 is also fixed to the ball guide 415 meshed with the guide shaft 414, and is configured to be able to move smoothly in the up-and-down direction along the guide shaft 414. The upper end and the lower end of the ball screw 411 and the guide shaft 414 are fixed to the fixing plates 413 and 416, respectively.

[0055] The rotation driving motor 430 and the wafer cassette vertical mechanism 420 having a linear actuator constitute a second driving unit, and are fixed to a base flange 401 as a cover body supported by a side plate 403 on a bottom plate 402 .

[0056] The rotation driving motor 430 drives the rotation transmission belt 432, and rotationally drives the support member 440 meshed with the rotation transmission belt 432, and the rotation transmission belt 432 meshes with the tooth portion 431 installed at the front end of the rotation driving motor 430. The partition support portion 310 is supported by the base 311, and the support member 440 is driven by the rotation driving motor 430 via the rotation transmission belt 432, so that the partition support portion 310 and the substrate support member 300 are rotated.

[0057] The wafer cassette up-down mechanism 420 having a linear actuator drives a shaft 421 in the up-down direction. A plate 422 is mounted on the front end of the shaft 421. The plate 422 is connected to a support portion 441 fixed to the substrate support member 300 via a bearing 423. The support portion 441 is connected to the plate 422 via the bearing 423, so that when the partition support member 310 is rotationally driven by the rotation driving motor 430, the substrate support member 300 can also rotate together with the partition support member 310.

[0058] On the other hand, the support portion 441 is supported by the support member 440 via the linear guide bearing 442. With such a configuration, when the shaft 421 is driven in the vertical direction by the wafer box vertical mechanism 420 having a linear actuator, the support portion 441 fixed to the substrate support member 300 can be driven in the vertical direction relative to the support member 440 fixed to the partition support portion 310.

[0059] A support member 440 fixed to the spacer support portion 310 and a support portion 441 fixed to the substrate support member 300 are connected by a vacuum bellows 443 .

[0060] An O-ring 446 for vacuum sealing is provided on the upper surface of the base flange 401 as a cover. Figure 1 As shown, by driving the up-and-down driving motor 410 to raise the upper surface of the base flange 401 to a position abutting against the transfer chamber 217 , the airtightness of the interior of the reaction tube 210 can be ensured.

[0061] Next, use Figure 2 , Figure 3 The details of the gas supply unit will be described.

[0062] like Figure 2 As shown, nozzles 223, 224, and 225 are provided in the frame 227 of the upstream side rectifying section 214, between the partition plates 226, and between the partition plates 226 and the frame 227. The nozzles 223, 224, and 225 are provided in the circumferential direction of the substrate S on the upstream side in the substantially horizontal direction relative to each substrate S.

[0063] The nozzle 223 is arranged in the central area of ​​the side of the substrate S, and the nozzles 224 and 225 are arranged on both sides of the nozzle 223 in the horizontal direction of the central area of ​​the side of the substrate S. The nozzle 224 is arranged on the downstream side of the nozzle 223 in the rotation direction of the substrate S. The nozzle 225 is arranged on the upstream side of the nozzle 223 in the rotation direction of the substrate S. That is, the nozzle 223 is arranged between the nozzle 224 and the nozzle 225. In other words, the nozzles 224 and 225 are arranged on both sides of the nozzle 223 in the horizontal direction.

[0064] like Figure 3 As shown, at the front end of the nozzle 223, a hole 223a opened toward the center of the substrate S, a hole 223b opened toward the edge region on the downstream side of the rotation direction of the substrate S, and a hole 223c opened toward the edge region on the upstream side of the rotation direction of the substrate S are formed. The hole 223a is configured to supply gas toward the center of the substrate S. In addition, the hole 223b is obliquely arranged at the downstream side of the hole 223a in the rotation direction of the substrate S, and is configured to supply gas toward the edge region on the downstream side when the substrate S rotates. In addition, the hole 223c is obliquely arranged at the upstream side of the hole 223a in the rotation direction of the substrate S, and is configured to supply gas toward the edge region on the upstream side when the substrate S rotates. That is, holes 223a, 223b, and 223c are formed at the front end of the nozzle 223 to supply gas in three directions.

[0065] The diameter of the hole 223a is, for example, about 6 mm, which is larger than the diameters of the holes 223b and 223c disposed on both sides of the hole 223a. The holes 223b and 223c are formed in a line symmetric manner with respect to the hole 223a toward the edge region of the substrate S.

[0066] A hole 224a is formed at the front end of the nozzle 224 and is open toward the edge region on the downstream side when the substrate S rotates. The hole 224a is provided to be inclined outward and is configured to supply gas toward the edge region on the downstream side when the substrate S rotates.

[0067] A hole 225a is formed at the front end of the nozzle 225 and is open toward the edge region on the upstream side when the substrate S rotates. The hole 225a is provided to be inclined outward and is configured to supply gas toward the edge region on the upstream side when the substrate S rotates.

[0068] The holes 224a and 225a are formed line-symmetrically with respect to the hole 223a in the direction of the edge region of the substrate S. The holes 224a and 225a are arranged closer to the edge region than the holes 223b and 223c. The diameters of the holes 224a and 225a are, for example, about 2 mm.

[0069] The nozzle 223 is connected to the gas supply pipe 251 . The nozzle 224 is connected to the gas supply pipe 261 . The nozzle 225 is connected to the gas supply pipe 271 .

[0070] In the gas supply pipe 251, a raw gas source 252, a mass flow controller (MFC) 253 as a flow controller (flow control unit), and a valve 254 as an on-off valve are provided in order from the upstream direction.

[0071] A raw material gas as a processing gas is supplied from a raw material gas source 252. Here, the raw material gas is a gas that combines at least two silicon atoms (Si), for example, a gas containing Si and chlorine (Cl). Figure 4 The raw material gas containing Si-Si bond such as hexachlorodisilane (Si2Cl6, hexachlorodisilane, abbreviated as HCDS) gas described in (A). Figure 4 As shown in (A), HCDS gas contains Si and chlorine groups (chloride) in its chemical structure formula (in one molecule). In addition, here, the raw material gas is a gas having the following properties, namely, under predetermined conditions, it has an undecomposed time that maintains a predetermined decomposition rate and a decomposition time that maintains a decomposition rate higher than the above-mentioned predetermined decomposition rate. It should be noted that the so-called undecomposed not only refers to a state in which the gas is not decomposed at all, but also includes a state in which it is decomposed to a certain extent, and is a state in which the gas in the undecomposed state is dominant. Due to such a state, it can also be called low decomposition instead of undecomposed. Therefore, the undecomposed time can also be called low decomposition time.

[0072] The Si-Si bond has energy to the extent that it is decomposed by colliding with the wall of the recessed portion constituting the substrate S described later in the reaction tube 210. Here, decomposition means that the Si-Si bond is cut. That is, the Si-Si bond is cut by colliding with the wall.

[0073] In the gas supply pipe 251, the downstream side of the valve 254 is connected to the gas supply pipe 255. In the gas supply pipe 255, an inert gas source 272, an MFC 257, and a valve 258 as an on-off valve are provided in order from the upstream direction. An inert gas, such as nitrogen (N2) gas, is supplied from the inert gas source 272.

[0074] The first gas supply unit 250 is mainly composed of a gas supply pipe 251 , an MFC 253 , a valve 254 , a gas supply pipe 255 , an MFC 257 , a valve 258 , and a nozzle 223 .

[0075] The inert gas supplied from the gas supply pipe 255 mainly functions as a carrier gas for conveying the raw material gas when supplying the raw material gas, and mainly functions as a purge gas for purging the gas remaining in the reaction tube 210 during purging.

[0076] Here, HCDS gas is used as an example of raw material gas, but it is not limited to this as long as it contains silicon and has Si-Si bonds. For example, 1,1,2,2-tetrachloro-1,2-dimethyldisilane ((CH3)2Si2Cl4, abbreviated as: TCDMDS) and 1,2-dichloro-1,1,2,2-tetramethyldisilane ((CH3)4Si2Cl2, abbreviated as: DCTMDS) can also be used. Figure 4 As shown in (B), TCDMDS contains Si-Si bonds and further contains chloro groups and alkylene groups. Figure 4 As shown in (C), DCTMDS contains Si-Si bonds and further contains a chloro group and an alkylene group.

[0077] like Figure 2 As shown, in the gas supply pipe 261, a reaction gas source 262, an MFC 263 as a flow controller (flow control unit), and a valve 264 as an on-off valve are provided in order from the upstream direction.

[0078] A reaction gas that reacts with the raw material gas is supplied from the reaction gas source 262. Here, the reaction gas is, for example, a gas containing any one of oxygen (O), nitrogen (N), and carbon (C). In this embodiment, the reaction gas is, for example, a nitrogen-containing gas, such as ammonia (NH3), diimide (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, and other nitride-based gases containing NH bonds.

[0079] The downstream side of the valve 264 in the gas supply pipe 261 is connected to the gas supply pipe 265. In the gas supply pipe 265, an inert gas source 272, an MFC 267, and a valve 268 as an on-off valve are provided in this order from the upstream direction.

[0080] The second gas supply unit 260 is mainly composed of a gas supply pipe 261 , an MFC 263 , a valve 264 , a gas supply pipe 265 , an MFC 267 , a valve 268 , and a nozzle 224 .

[0081] The inert gas supplied from the gas supply pipe 265 mainly functions as a carrier gas for conveying the raw material gas when supplying the raw material gas, and mainly functions as a purge gas for purging the gas remaining in the reaction tube 210 during purging.

[0082] like Figure 2 As shown, in the gas supply pipe 271, a reaction gas source 262, an MFC 273 as a flow controller (flow control unit), and a valve 274 as an on-off valve are provided in order from the upstream direction.

[0083] The downstream side of the valve 274 in the gas supply pipe 271 is connected to the gas supply pipe 275. In the gas supply pipe 275, an inert gas source 272, an MFC 277, and a valve 278 as an on-off valve are provided in this order from the upstream direction.

[0084] The third gas supply unit 280 is mainly composed of a gas supply pipe 271 , an MFC 273 , a valve 274 , a gas supply pipe 275 , an MFC 277 , a valve 278 , and a nozzle 225 .

[0085] The inert gas supplied from the gas supply pipe 275 functions as a carrier gas for conveying the source gas when supplying the source gas, and functions as a purge gas for purging the gas remaining in the reaction tube 210 during purging.

[0086] It should be noted that the third gas supply unit 280 supplies the same reaction gas or inert gas as the second gas supply unit 260 to the substrate S. Therefore, the third gas supply unit may also be referred to as a second gas supply unit.

[0087] Next, use Figure 1 The exhaust system will be described.

[0088] The exhaust system 290 for exhausting the atmosphere of the reaction tube 210 includes an exhaust pipe 291 communicating with the reaction tube 210 , and is connected to the housing 241 via an exhaust pipe connection portion 242 .

[0089] like Figure 1 As shown, the exhaust pipe 291 is connected to a vacuum pump 294 as a vacuum exhaust device via a valve 292 as an on-off valve and an APC (Auto Pressure Controller) valve 293 as a pressure regulator (pressure regulating unit), so as to be able to perform vacuum exhaust so that the pressure in the reaction tube 210 reaches a predetermined pressure (vacuum degree). The exhaust pipe 291, the valve 292, and the APC valve 293 are collectively referred to as an exhaust system 290. The exhaust system 290 is also referred to as a process chamber exhaust system. In addition, the exhaust system 290 may also include a vacuum pump 294.

[0090] Next, use Figure 5 The controller as a control unit (control unit) will be described. The substrate processing apparatus 10 includes a controller 600 that controls the operation of each unit of the substrate processing apparatus 10 .

[0091] The controller 600 is schematically shown in Figure 6The controller 600 is configured as a computer having a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage device 603 as a storage unit, and an I / O interface 604. The RAM 602, the storage device 603, and the I / O interface 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605. The transmission and reception of data in the substrate processing device 10 is performed according to the instruction of the transmission and reception instruction unit 606 which is one of the functions of the CPU 601.

[0092] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive information related to the processing history and scheduled processing of the substrate S accommodated in a wafer pod from the host device 670.

[0093] The storage device 603 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage device 603 stores and reads a control program for controlling the operation of the substrate processing apparatus 10 and a process recipe recording the process and conditions of substrate processing.

[0094] It should be noted that the process recipe is a combination of the various processes in the substrate processing steps described later so that they are executed by the controller 600 and a predetermined result is obtained, and functions as a program. Hereinafter, process recipes, control programs, etc. are also simply collectively referred to as programs. It should be noted that when the term "program" is used in this specification, it includes the case of only a single process recipe, the case of only a single control program, or the case of both. In addition, RAM602 is configured as a storage area (working area) for temporarily storing programs, data, etc. read by CPU602.

[0095] The I / O interface 604 is connected to each component of the substrate processing apparatus 10 .

[0096] The CPU 601 is configured to read out a control program from the storage device 603 and execute it, and to read out a process recipe from the storage device 603 in response to input of an operation command from the input / output device 681. The CPU 601 is configured to control the substrate processing apparatus 10 according to the contents of the read process recipe.

[0097] CPU601 has a sending and receiving instruction unit 606. The controller 600 can be configured in this embodiment by installing the program on the computer using an external storage device (for example, a disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program. It should be noted that the method of providing the program to the computer is not limited to the case where it is provided via the external storage device 682. For example, the program can also be provided without the external storage device 682 using communication methods such as the Internet and a dedicated line. It should be noted that the storage device 603 and the external storage device 682 are configured as a computer-readable recording medium. Hereinafter, these will also be simply collectively referred to as recording media. It should be noted that when the term "recording medium" is used in this specification, it includes the case where there is only a single storage device 603, the case where there is only a single external storage device 682, or the case where both of them are included.

[0098] Next, a process of forming a thin film on a substrate S using the substrate processing apparatus 10 having the above-described structure will be described as one process of semiconductor manufacturing. In the following description, the operations of the various components constituting the substrate processing apparatus 10 are controlled by the controller 600 .

[0099] Here, in the film forming process of forming a film on a substrate S having grooves as recessed portions on the surface thereof by alternately supplying a raw material gas and a reaction gas, a Figure 6 to Figure 13 Provide explanation.

[0100] (S10)

[0101] The transfer chamber pressure adjustment step S10 will be described. Here, the pressure in the transfer chamber 217 is set to the same level as the pressure in the vacuum transfer chamber (not shown) adjacent to the transfer chamber 217.

[0102] (S11)

[0103] Next, the substrate carrying-in step S11 will be described.

[0104] After the transfer chamber 217 reaches the vacuum level, the substrate S is transported. After the substrate S arrives at the vacuum transfer chamber, the gate valve is opened, and the vacuum transfer robot carries the substrate S into the transfer chamber 217 .

[0105] At this time, the substrate support 300 is on standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300. After a predetermined number of substrates S are transferred to the substrate support 300, the vacuum transfer robot retreats, and at the same time, the substrate support 300 is lifted by the vertical direction driving mechanism 400 to move the substrate S into the processing chamber in the reaction tube 210.

[0106] During the movement to the reaction tube 210 , the surface of the substrate S is positioned so as to be aligned with the heights of the partition plates 226 and 232 .

[0107] (S12)

[0108] Next, the heating step S12 will be described.

[0109] After the substrate S is moved into the processing chamber as the reaction tube 210, the reaction tube 210 is controlled to reach a predetermined pressure, and at the same time, the surface temperature of the substrate S is controlled to reach a predetermined temperature. The temperature of the heater 211 is controlled so that the temperature of the substrate S is, for example, 100° C. to 1500° C., preferably 200° C. to 1000° C., and more preferably 400° C. to 800° C. In addition, the pressure in the reaction tube 210 can be considered to be, for example, 5 Pa to 100 kPa. That is, the substrate S is processed in a stacked state in the substrate support 300.

[0110] (S13)

[0111] Next, the film processing step S13 will be described. In the film processing step S13, the following steps are performed on the substrate S having grooves as recessed portions on the surface according to the process recipe.

[0112] <Raw material gas supply, step S100>

[0113] First, the raw material gas is supplied into the reaction tube 210. In the supply of the raw material gas, Figure 8 As shown, the edge region supply of raw material gas (S200) and the central region supply of raw material gas (S201) are performed a predetermined number of times (S202). The same raw material gas is supplied in all steps, but not limited to this, as long as at least the main component (such as Si component) contributing to film formation is the same.

[0114] Here, in the configuration in which the gas is supplied from the lateral direction of the substrate S and exhausted from the lateral direction as in the above-mentioned substrate processing apparatus 10, the raw material gas can be supplied in an undecomposed state compared with the configuration in which the gas is supplied from the bottom of the substrate S and exhausted from below.

[0115] However, even in a configuration in which the gas is supplied and exhausted from the lateral direction as in the substrate processing apparatus 10, when a decomposition-type raw material gas such as HCDS gas is used, the decomposition state of the raw material gas may differ between the central region of the substrate S and the edge region of the substrate S as the periphery of the substrate S due to the gas supply method, and there may be a case where a difference in step coverage occurs. In order to improve the step coverage, when, for example, HCDS gas is used as the raw material gas, the exposure amounts of the undecomposed HCDS and the decomposed SiCl2 need to be kept constant over the entire substrate.

[0116] Fig. 9 (A) is a diagram showing the partial pressure of SiCl 2 from the gas supply side to the exhaust side in the raw material gas edge region supply and the raw material gas center region supply. Fig. 9 (B) is a diagram showing the partial pressure of HCDS from the gas supply side to the exhaust side in the raw gas edge region supply and the raw gas center region supply.

[0117] like Fig. 9 (A) and Fig. 9 As shown in (B), if the raw gas edge region supply described later is performed, the partial pressure of SiCl2 from the gas supply side to the exhaust side can be maintained at the level of APa. On the other hand, if the raw gas edge region supply is performed, the partial pressure of HCDS on the exhaust side will be reduced compared to the supply side. In addition, if the raw gas central region supply described later is performed, the partial pressure of HCDS from the gas supply side to the exhaust side can be maintained at the level of B (B>A)Pa. On the other hand, if the raw gas central region supply is performed, the partial pressure of SiCl2 on the exhaust side will increase compared to the supply side. That is, only by supplying the raw gas edge region, the partial pressure of HCDS in the central region of the substrate S will be insufficient, and only by supplying the raw gas central region, the partial pressure of SiCl2 in the edge region of the substrate S will be insufficient.

[0118] The inventors have found that by continuously supplying the raw material gas edge region and the raw material gas central region described later, the exposure amounts of the undecomposed HCDS and the decomposed SiCl2 can be fixed over the entire substrate, thereby improving the step coverage. The present disclosure is proposed based on the knowledge found by the inventors.

[0119] [Raw material gas edge area supply, step S200]

[0120] The valve 254 is opened to allow the raw material gas to flow into the gas supply pipe 251. The raw material gas is supplied to the reaction tube 210 through the distribution part 125, the nozzle 223, and the holes 223a, 223b, and 223c by adjusting the flow rate by the MFC 253. At this time, in parallel, the valves 268 and 278 are opened to allow the inert gas such as N2 gas to flow into the gas supply pipes 261 and 271. The inert gas is supplied to the reaction tube 210 through the distribution part 125, the nozzles 224 and 225, and the holes 224a and 225a by adjusting the flow rate by the MFC 267 and 277. Furthermore, the gas is exhausted through the space above the substrate S, the downstream side rectifying part 215, the gas exhaust structure 213, and the exhaust pipe 281. That is, in this step, the raw material gas and the inert gas are supplied to the reaction tube 210 as the processing gas.

[0121] like Fig.10As shown, raw material gas is supplied from a nozzle 223 arranged in the central area on the side of the substrate S to the central area and the two edge areas of the substrate S, respectively. In parallel, inactive gas is supplied from nozzles 224, 225 arranged on the horizontal side of the central area on the side of the substrate S to the two edge areas of the substrate S, respectively.

[0122] In other words, the raw material gas is supplied from the nozzle 223 disposed in the central area on the side of the substrate S to the edge area of ​​the substrate S, and in parallel, the inactive gas is supplied from the nozzles 224 and 225 disposed on both sides of the central area on the side of the substrate S in the horizontal direction to the edge area of ​​the substrate S. That is, the inactive gas and the raw material gas are supplied in parallel to the edge area of ​​the substrate S. At this time, the inactive gas is supplied to the edge area side of the substrate S more than the raw material gas.

[0123] At this time, the flow rate (second flow rate) of the inactive gas adjusted by MFC267, 277 is greater (larger) than the flow rate (first flow rate) of the raw material gas adjusted by MFC253. In addition, the flow rates of the inactive gas adjusted by MFC267, 277 are the same. That is, the supply amount of the inactive gas supplied from the nozzles 224, 225 is the same, and the inactive gas is supplied to the two edge areas of the substrate S through the holes 224a, 225a at the same flow rate.

[0124] That is, the raw material gas is supplied to the central area and the edge area of ​​the substrate S through the holes 223a, 223b, and 223c at a first flow rate, and in parallel, the inactive gas is supplied to the edge area of ​​the substrate S through the holes 224a and 225a at a second flow rate greater than the first flow rate. Therefore, the raw material gas is supplied in a manner that the conveying speed (flow rate) of the raw material gas to the edge area of ​​the substrate S is faster than the conveying speed (flow rate) of the raw material gas to the central area of ​​the substrate S. Thus, the raw material gas can be made directional, and the conveying speed of the raw material gas to the edge area of ​​the substrate S is faster than the conveying speed of the raw material gas to the central area, led by the inactive gas supplied to the edge area of ​​the substrate S. That is, it is set so that in the supply of the raw material gas to the edge area, by supplying the inactive gas as a carrier gas to the edge area of ​​the substrate S at a flow rate greater than that of the raw material gas, the raw material gas can reach the edge area of ​​the substrate S during the undecomposed time of the raw material gas.

[0125] At this time, the raw material gas is supplied horizontally from the side of the substrate S to the edge area of ​​the substrate S via the nozzle 223 connected to the processing chamber. The raw material gas is a gas that combines at least two Si atoms, and for example, Si2Cl6 gas (hereinafter referred to as HCDS gas) as a gas containing Si and Cl can be used. That is, the raw material gas in an undecomposed state is supplied horizontally from the side of the substrate S to the surface of the edge area of ​​the substrate S. As a result, in the edge area of ​​the substrate S, the raw material gas is supplied in an undecomposed state and collides with the wall constituting the groove, whereby the raw material gas is decomposed into a precursor. Furthermore, the decomposed precursor adheres to the inner wall of the wall constituting the groove.

[0126] [Raw material gas central supply, step S201]

[0127] Then, after a predetermined time has passed, the valve 254 is maintained in an open state, the valve 258 is opened, and the inert gas as a carrier gas of the raw material gas is started to be supplied into the gas supply pipe 251 while the raw material gas is continuously supplied. The inert gas as the carrier gas is adjusted to a third flow rate by the MFC 257, merged with the raw material gas in the gas supply pipe 251, and supplied into the reaction tube 210 through the distribution part 125, the nozzle 223, the holes 223a, 223b, and 223c. That is, the raw material gas is supplied from the nozzle 223 to the central area and the edge area of ​​the substrate S, and in parallel, the inert gas is supplied from the nozzle 223 to the central area and the edge area of ​​the substrate S at the third flow rate. That is, in this step, the raw material gas and the inert gas are supplied into the reaction tube 210 as the processing gas.

[0128] At this time, the flow rate is adjusted by MFC267, 277, and a small amount of inactive gas is supplied from nozzles 224, 225 to the edge area of ​​the substrate S to a degree that does not affect the gas supplied from nozzle 223. The supply amount of inactive gas supplied from nozzles 224, 225 is the same. Then, exhaust is performed through the space above the substrate S, the downstream side rectifying section 215, the gas exhaust structure 213, and the exhaust pipe 281. At this time, valves 268, 278 can also be closed to stop the supply of inactive gas to the edge area of ​​the substrate S.

[0129] like Fig.11 As shown, raw material gas is supplied from the nozzle 223 to the central area and the two edge areas of the substrate S, and raw material gas is supplied from the central area on the side of the substrate S to the central area and the edge areas of the substrate S, and in parallel, inactive gas is supplied from the central area on the side of the substrate S to the central area and the edge areas of the substrate S, respectively.

[0130] In other words, the source gas is supplied from the nozzle 223 disposed in the central region of the side of the substrate S to the central region and both edge regions of the substrate S, and in parallel, the inactive gas is supplied from the nozzle 223 disposed in the central region of the side of the substrate S to the central region and both edge regions of the substrate S. That is, the inactive gas and the source gas are supplied to the central region and the edge regions of the substrate S in parallel.

[0131] Here, as described above, since the diameters of the holes 223b and 223c are formed to be smaller than the diameter of the hole 223a, the source gas is mainly supplied to the central area of ​​the substrate S from the nozzle 223 disposed in the central area on the side of the substrate S, and in parallel, the inactive gas is supplied to the central area of ​​the substrate S at the third flow rate from the nozzle 223 disposed in the central area on the side of the substrate S. In addition, as described above, a small amount of inactive gas is supplied to both edge areas of the substrate S from the nozzles 224 and 225 to an extent that does not affect the gas supplied from the nozzle 223.

[0132] Therefore, the raw material gas is supplied in such a manner that the conveying speed (flow rate) of the raw material gas toward the central region of the substrate S is faster than the conveying speed (flow rate) of the raw material gas toward the edge region of the substrate S. That is, the raw material gas is supplied to the central region of the substrate S without being led by the inactive gas supplied toward the edge region of the substrate S, and the conveying speed of the raw material gas toward the central region of the substrate S is faster than the conveying speed of the raw material gas toward the edge region of the substrate S. That is, it is set so that during the supply of the raw material gas to the central region, the inactive gas as a carrier gas is supplied to the central region of the substrate S in parallel with the raw material gas, so that the raw material gas can reach the central region of the substrate S during the undecomposed time of the raw material gas.

[0133] At this time, the raw material gas is supplied horizontally from the side of the substrate S mainly to the central area of ​​the substrate S via the nozzle 223 connected to the processing chamber. That is, as the raw material gas in this step, the same raw material gas as the raw material gas supplied to the edge area can be used. Moreover, the raw material gas in an undecomposed state is supplied horizontally from the side of the substrate S to the surface of the central area of ​​the substrate S. Thus, in the central area of ​​the substrate S, the raw material gas is supplied in an undecomposed state and collides with the wall constituting the groove, thereby decomposing the raw material gas into a precursor. Furthermore, the decomposed precursor adheres to the inner wall of the wall constituting the groove.

[0134] [Perform a predetermined number of times, step S202]

[0135] The above-mentioned step S200 and step S201 are sequentially performed in a cycle for a predetermined number of times (m times), which is more than one time. That is, after the edge region supply of the raw material gas and the central region supply of the raw material gas are repeated multiple times, the next step S101 is performed. Thus, a film of a predetermined thickness is formed on the substrate S having the groove. Here, for example, a Si-containing film is formed.

[0136] For example, when HCDS gas is used as the raw material gas, the raw material gas is supplied to the edge area, such as Fig.12 As shown in (A), the raw material gas is supplied faster in the edge area than in the central area of ​​the substrate S, and the HCDS gas supplied to the reaction tube 210 is supplied from the side of the substrate S to the edge area of ​​the substrate S. Thus, the HCDS gas is supplied to the groove on the surface of the edge area of ​​the substrate S and collides with the wall constituting the groove. Through this collision, the Si-Si bond of Si2Cl6 as the HCDS gas is cut and decomposed into the precursor SiCl2. SiCl2 is in the state during the formation of the film, so it is also called an intermediate. The molecular size of the decomposed SiCl2 is smaller than that of HCDS and is easy to adhere to the wall constituting the groove. That is, by supplying the HCDS gas in an undecomposed state from the side of the substrate S to the edge area of ​​the substrate S, the HCDS gas is supplied to the surface of the edge area of ​​the substrate S in an undecomposed state and collides with the wall constituting the groove. Thus, on the surface of the edge area of ​​the substrate S, the HCDS gas is supplied in an undecomposed state, and in the groove, the HCDS gas is decomposed into SiCl2, and the decomposed SiCl2 adheres to the groove.

[0137] Similarly, by supplying the raw gas to the central area, such as Fig.12 As shown in (B), the raw material gas is supplied faster in the central region than in the edge region of the substrate S, and the HCDS gas supplied into the reaction tube 210 is supplied in an undecomposed state from the side of the substrate S toward the central region of the substrate S. Thus, the HCDS gas is supplied in an undecomposed state on the surface of the central region of the substrate S, and the HCDS gas is decomposed into SiCl2 in the groove, and the decomposed SiCl2 adheres to the groove.

[0138] That is, in this method, the supply of the raw material gas to the edge region and the supply of the raw material gas to the central region is repeated multiple times, and the HCDS gas is supplied to the surface of the substrate S in an undecomposed state over the entire substrate S, and SiCl2 with a high deposition rate is generated by colliding with the wall in the groove. As a result, it is also easy to move to the bottom of the groove, forming a Si-containing film with improved step coverage performance.

[0139] <Purge, step S101>

[0140] After a predetermined time has passed since the start of the supply of the raw material gas, the valve 254 is closed to stop the supply of the raw material gas. At this time, the valves 258, 268, and 278 are opened to supply an inert gas as a purge gas into the gas supply pipes 255, 265, and 275, while the valve 292 and the APC valve 293 of the exhaust pipe 291 are kept open, and the reaction tube 210 is evacuated by the vacuum pump 294. In this way, the reaction between the raw material gas and the reaction gas in the gas phase existing in the reaction tube 210 can be suppressed.

[0141] <Reaction Gas Supply, Step S102>

[0142] After a predetermined time has passed since the start of the purge, the valves 268 and 278 are closed, the valves 264 and 274 are opened, and the reaction gas flows into the gas supply pipes 261 and 271. Fig.13 As shown, the reaction gas is adjusted in flow rate by MFC263, 273, and supplied to the reaction tube 210 through the distribution part 125, the nozzle 224, the hole 224a, the nozzle 225, and the hole 225a. Then, the gas is exhausted through the space above the substrate S, the downstream side rectifying part 215, the gas exhaust structure 213, and the exhaust pipe 291. At this time, in order to prevent the reaction gas from invading the gas supply pipe 251, the valve 258 is opened to flow in the inert gas from the nozzle 223. That is, in this step, the reaction gas and the inert gas are supplied to the reaction tube 210 as the processing gas.

[0143] At this time, the reaction gas is supplied from the side of the substrate S to the substrate S via the gas supply structure 212. Here, the reaction gas is a gas different from the raw material gas and is a gas that reacts with the raw material gas. For example, NH3 gas as an N-containing gas can be used. That is, the reaction gas is supplied from the side of the substrate S to the surface of the substrate S. Then, the reaction gas is supplied into the groove to react with the precursor attached to the wall constituting the groove, and the desired film is formed on the substrate S including the groove. Specifically, on the surface of the substrate S, the NH3 gas reacts with the HCDS gas, and the NH3 gas supplied into the groove reacts with the SiCl2 attached to the wall constituting the groove, forming a silicon nitride (SiN) film in which vacancies are suppressed and step coverage performance is improved.

[0144] <Purge, step S103>

[0145] After a predetermined time has passed since the start of the supply of the reaction gas, the valves 264 and 274 are closed to stop the supply of the reaction gas. At this time, the valves 258, 268, and 278 are opened to supply an inert gas as a purge gas into the gas supply pipes 255, 265, and 275, while the valve 292 and the APC valve 293 of the exhaust pipe 291 are kept open, and the reaction tube 210 is evacuated by the vacuum pump 294. In this way, the reaction between the raw material gas in the gas phase and the reaction gas present in the reaction tube 210 can be suppressed.

[0146] <Execute the predetermined number of times, step S104>

[0147] By performing the cycle of the above-mentioned steps S100 to S103 sequentially and non-simultaneously for a predetermined number of times (n times), more than one time, a film of a predetermined thickness is formed on the substrate S having the groove. Here, for example, a SiN film is formed. That is, the supply of the raw material gas edge region (S200) and the supply of the raw material gas center region (S201) are performed in a state where the supply of the reaction gas is stopped.

[0148] (S14)

[0149] Next, the substrate unloading step S14 is described. In S14, the processed substrate S is unloaded to the outside of the transfer chamber 217 in the reverse process of the substrate loading step S11.

[0150] (S15)

[0151] Next, determination S15 is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the substrate loading step S11 and the next substrate S is processed. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0152] It should be noted that the gas flow described above is horizontal, and as long as the mainstream of the gas is formed in the horizontal direction as a whole, the gas flow may also be diffused in the vertical direction within the range that does not affect the uniform processing of multiple substrates.

[0153] In addition, the expressions same, same degree, equivalent, equivalent, etc. in the above texts include the meaning of substantially the same, as it goes without saying.

[0154] (Other embodiments)

[0155] Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited thereto and various modifications can be made without departing from the spirit and scope of the present disclosure.

[0156] It should be noted that in the above-mentioned embodiment, the structure of supplying the raw material gas to the central area after supplying the raw material gas to the edge area is used for explanation, but the present disclosure is not limited to this. The raw material gas may also be supplied to the edge area after supplying the raw material gas to the central area.

[0157] In addition, in the above embodiment, the raw material gas supplied in the raw material gas edge region is described as being the same as the raw material gas supplied in the raw material gas central region, but the present disclosure is not limited thereto. Even if the main component of the processing gas supplied in the raw material gas edge region is the same as the main component of the processing gas supplied in the raw material gas central region, this method can be applied.

[0158] In addition, in the above embodiment, the configuration in which the nozzles 224 and 225 for supplying inert gas to the edge region of the substrate S are arranged on both sides of the nozzle 223 for supplying raw material gas to increase the conveying speed of the raw material gas in the edge region is described, but the present disclosure is not limited thereto, and a nozzle for supplying raw material gas to the edge region of the substrate S may be further arranged outside the nozzles 224 and 225. That is, three or more nozzles may be arranged substantially horizontally in the frame 227.

[0159] In addition, in the above-mentioned embodiment, the case where the raw material gas edge region supply in which the raw material gas is supplied to the edge region of the substrate S in an undecomposed state and the raw material gas central region supply in which the raw material gas is supplied to the central region of the substrate S in an undecomposed state are respectively fixed in the undecomposed state and the decomposed state on the entire wafer is described, but the present disclosure is not limited thereto, and an adsorption-inhibiting gas that inhibits the adsorption of the raw material gas may be supplied to the edge region of the substrate S to suppress the adsorption of the raw material gas in the edge region compared to the central region of the substrate S. Specifically, for example, HCl (hydrogen chloride) may be attached to the edge region of the substrate S to suppress the excessive attachment of the raw material gas to the edge region of the substrate S. After supplying the adsorption-inhibiting gas, the raw material gas central region supply in which the raw material gas is supplied to the central region of the substrate S in an undecomposed state is performed to supply the raw material gas.

[0160] Furthermore, in the above-mentioned embodiment, an example is given of a case where a film is formed by using HCDS gas as a raw material gas and using NH 3 gas as a reaction gas in a film processing step performed by a substrate processing apparatus, but the present embodiment is not limited thereto.

[0161] In addition, for example, in each of the above-mentioned embodiments, an example of a film forming process is cited as a process performed by a substrate processing device, but the present embodiment is not limited thereto. That is, in addition to being applicable to the film forming processes exemplified in each of the embodiments, the present embodiment can also be applied to film forming processes other than the thin films exemplified in each of the embodiments. In addition, in the present embodiment, a device for stacking a plurality of substrates for processing is described, but it is not limited thereto, and can also be applied to a single-chip device that processes substrates one by one. In addition, a part of the configuration of a certain embodiment can be replaced with the configuration of other embodiments, and a configuration of other embodiments can be added to the configuration of a certain embodiment. In addition, for a part of the configuration of each embodiment, other configurations can also be added, eliminated, or replaced.

[0162] <Preferred Embodiments of the Present Disclosure>

[0163] Preferred embodiments of the present disclosure are described below.

[0164] (Supplementary Note 1) According to one embodiment of the present disclosure, there is provided a method for manufacturing a semiconductor device or a method for processing a substrate, comprising:

[0165] (a1) supplying the process gas in such a manner that the process gas is transported faster toward the edge region of the substrate than toward the center region of the substrate,

[0166] (a2) supplying the process gas in such a manner that the process gas is transported faster toward the center region of the substrate than toward the edge region of the substrate, and

[0167] (b) A step of supplying a reaction gas toward the substrate.

[0168] (Supplementary Note 2) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 1, wherein:

[0169] The main component of the processing gas in (a1) is the same as the main component of the processing gas in (a2).

[0170] (Supplementary Note 3) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 1, wherein:

[0171] The raw material gas contained in the above-mentioned processing gas in (a1) is the same as the raw material gas contained in the above-mentioned processing gas in (a2).

[0172] (Supplementary Note 4) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 1, wherein:

[0173] In (a1), the processing gas is an adsorption-inhibiting gas, and in (a2), the processing gas is an adsorbable gas.

[0174] (Supplementary Note 5) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplementary Notes 1 to 3, wherein:

[0175] In (a1), the processing gas is supplied to the edge region of the substrate at a first flow rate, and in parallel, the inert gas is supplied to the edge region at a second flow rate greater than the first flow rate.

[0176] (Supplementary Note 6) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 5, wherein:

[0177] In (a2), the processing gas is supplied toward the central region of the substrate, and simultaneously, the inert gas is supplied toward the central region at a third flow rate.

[0178] (Supplementary Note 7) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplementary Notes 1 to 3, wherein:

[0179] In (a1), an inactive gas is supplied to the edge region, and in parallel with this, the processing gas is supplied. After a predetermined period of time, the supply of the inactive gas to the edge region is stopped. Meanwhile, in (a2), the supply of the inactive gas as a carrier gas for the processing gas is started while the processing gas is continued to be supplied.

[0180] (Supplementary Note 8) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 1, wherein:

[0181] In (a1) and (a2), the processing gas is supplied while the supply of the reaction gas is stopped.

[0182] (Supplementary Note 9) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplementary Notes 1 to 3, wherein:

[0183] In (a1), the inert gas is supplied toward the edge region side compared to the above-mentioned process gas.

[0184] (Supplement 10) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 3, wherein:

[0185] In (a1), the processing gas is supplied to the edge region on the downstream side and the edge region on the upstream side of the rotating substrate.

[0186] (Supplement 11) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 3, wherein:

[0187] In (a1), the processing gas is supplied to both edge regions of the substrate.

[0188] (Supplement 12) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 3, wherein:

[0189] (a1) is performed after (a2).

[0190] (Supplement 13) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 4, wherein:

[0191] (a2) is performed after (a1).

[0192] (Supplement 14) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplement 9, wherein:

[0193] In (a1), the inert gas is supplied to both edge regions of the substrate at the same flow rate.

[0194] (Supplement 15) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 4, wherein:

[0195] After (a1) and (a2) are repeated multiple times, (b) is performed.

[0196] (Supplement 16) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 3, wherein:

[0197] (a1), a processing gas is supplied from the central area of ​​the side of the substrate toward the edge area of ​​the substrate, and in parallel, an inert gas is supplied from the horizontal side of the central area of ​​the side of the substrate toward the edge area of ​​the substrate,

[0198] In (a2), the processing gas is supplied from the central area on the side of the substrate toward the central area of ​​the substrate.

[0199] (Supplement 17) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplements 1 to 3, wherein:

[0200] (a1), a processing gas is supplied from a first gas supply unit disposed in a central region on the side of the substrate toward an edge region of the substrate, and in parallel, an inert gas is supplied from a second gas supply unit disposed in a horizontal direction laterally of the central region on the side of the substrate toward an edge region of the substrate,

[0201] In (a2), the processing gas is supplied from the first gas supply unit toward the central area of ​​the substrate.

[0202] (Supplementary Note 18) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplementary Notes 1 to 3, wherein:

[0203] The processing gas is a gas having the following properties: under predetermined conditions, it has the property of maintaining an undecomposed time at a predetermined decomposition rate and maintaining a decomposed time at a decomposition rate higher than the predetermined decomposition rate.

[0204] (Supplementary Note 19) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 18, wherein:

[0205] In (a2), the carrier gas is supplied in addition to the process gas and reaches the central area of ​​the substrate during the non-decomposition time of the process gas.

[0206] (Supplementary Note 20) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 18 or Supplementary Note 19, wherein:

[0207] In (a1), the carrier gas is supplied in addition to the process gas and reaches the edge region of the substrate during the non-decomposition time of the process gas.

[0208] (Supplementary Note 21) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplementary Notes 1 to 3, wherein:

[0209] The processing gas is a gas that combines at least two Si atoms.

[0210] (Supplementary Note 22) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 17, wherein:

[0211] A hole opening toward the center of the substrate and a hole opening toward the edge region are formed at the front end of the first gas supply portion.

[0212] (Supplementary Note 23) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 17, wherein:

[0213] A hole opening toward the edge region is formed at the front end of the second gas supply portion.

[0214] (Supplementary Note 24) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate according to Supplementary Note 17, wherein:

[0215] The second gas supply unit is disposed on both sides of the first gas supply unit in a horizontal direction.

[0216] In (a1), the supply amounts of the inert gases supplied from the second gas supply units are equal.

[0217] (Supplementary Note 25) It is preferred to provide a method for manufacturing a semiconductor device or a method for processing a substrate as described in any one of Supplementary Notes 1 to 24, wherein:

[0218] The substrate is processed in a processing chamber.

[0219] The above-mentioned substrates are processed in a stacked state.

[0220] (Supplementary Note 26) According to another aspect of the present disclosure, there is provided a substrate processing apparatus comprising:

[0221] a substrate holding portion for holding the substrate,

[0222] a first gas supply unit for supplying a raw material gas and an inert gas to the substrate held by the substrate holding unit;

[0223] a second gas supply unit for supplying a reactive gas and an inert gas to the substrate held by the substrate holding unit, and

[0224] A control unit is configured to control the first gas supply unit and the second gas supply unit to perform the following processes: (a1) a process in which the raw material gas is supplied in a manner that the delivery speed of the raw material gas to the edge area of ​​the substrate is faster than the delivery speed of the raw material gas to the central area of ​​the substrate, (a2) a process in which the raw material gas is supplied in a manner that the delivery speed of the raw material gas to the central area of ​​the substrate is faster than the delivery speed of the raw material gas to the edge area of ​​the substrate, and (b) a process in which a reaction gas is supplied to the substrate.

[0225] (Supplementary Note 27) According to another aspect of the present disclosure, there is provided a program capable of causing a substrate processing apparatus to execute the following process through a computer:

[0226] (a1) supplying the process gas in such a manner that the process gas is delivered to the edge region of the substrate at a faster speed than the process gas is delivered to the central region of the substrate,

[0227] (a2) supplying the process gas in such a manner that the process gas is delivered to the central region of the substrate at a faster speed than the process gas is delivered to the edge region of the substrate, and

[0228] (b) A process of supplying a reaction gas toward the substrate.

Claims

1. A substrate processing method, comprising: (a1) supplying a processing gas from a central area on the side of a substrate toward the central area of ​​the substrate and toward both edge areas of the substrate, and in parallel, supplying an inactive gas from the side of the central area on the side of the substrate toward both edge areas of the substrate, so that the conveying speed of the processing gas toward the edge area of ​​the substrate is faster than the conveying speed of the processing gas toward the central area of ​​the substrate, (a2) supplying a processing gas from the central area of ​​the side of the substrate toward the central area of ​​the substrate and the two edge areas of the substrate, and in parallel, supplying an inactive gas from the central area of ​​the side of the substrate toward the central area of ​​the substrate and the two edge areas of the substrate, so that the processing gas is transported toward the central area of ​​the substrate faster than the processing gas is transported toward the edge areas of the substrate, and (b) A step of supplying a reaction gas toward the substrate.

2. The substrate processing method according to claim 1, wherein: The main component of the processing gas supplied from the central area of ​​the side of the substrate to the central area of ​​the substrate and the two edge areas of the substrate in (a1) is the same as the main component of the processing gas supplied from the central area of ​​the side of the substrate to the central area of ​​the substrate and the two edge areas of the substrate in (a2).

3. The substrate processing method according to claim 1, wherein: The raw material gas contained in the processing gas supplied from the central area of ​​the side of the substrate to the central area of ​​the substrate and the two edge areas of the substrate in (a1) is the same as the raw material gas contained in the processing gas supplied from the central area of ​​the side of the substrate to the central area of ​​the substrate and the two edge areas of the substrate in (a2).

4. The substrate processing method according to claim 1, wherein: In (a1), the processing gas is supplied to both edge regions of the substrate at a first flow rate, and in parallel, an inert gas is supplied to both edge regions of the substrate at a second flow rate greater than the first flow rate.

5. The substrate processing method according to claim 4, wherein: In (a2), the processing gas is supplied toward the central region of the substrate, and in parallel, the inert gas is supplied toward the central region of the substrate at a third flow rate.

6. The substrate processing method according to claim 1, wherein: The processing gas in (a1) is an adsorption-inhibiting gas, and the processing gas in (a2) is an adsorbable gas.

7. The substrate processing method according to claim 1, wherein: In (a1), an inactive gas is supplied to both edge regions of the substrate, and in parallel, a processing gas is supplied to the central region of the substrate and both edge regions of the substrate, and after a predetermined time, the supply of the inactive gas to the both edge regions of the substrate is stopped, and, In (a2), while the process gas is continuously supplied, an inert gas serving as a carrier gas of the process gas is supplied from a central area on the side of the substrate toward a central area of ​​the substrate and both edge areas of the substrate.

8. The substrate processing method according to claim 1, wherein: In (a1), the inert gas is supplied toward the edge regions more than the processing gas is supplied from the center region of the side of the substrate toward the center region of the substrate and toward both edge regions of the substrate.

9. The substrate processing method according to claim 1, wherein: After (a1) and (a2) are repeated multiple times, (b) is performed.

10. The substrate processing method according to claim 1, wherein: In (a1), a processing gas is supplied from a central area on the side of the substrate toward a central area of ​​the substrate and two edge areas of the substrate, and in parallel, an inactive gas is supplied from a horizontal direction of the central area on the side of the substrate toward two edge areas of the substrate.

11. The substrate processing method according to claim 1, wherein: In (a1), a processing gas is supplied from a first gas supply unit disposed in a central area on the side of the substrate toward the central area of ​​the substrate and toward both edge areas of the substrate, and in parallel, an inert gas is supplied from a second gas supply unit disposed laterally in a horizontal direction from the central area on the side of the substrate toward the edge areas of the substrate. In (a2), the processing gas is supplied from the first gas supply part toward the central area of ​​the substrate and both edge areas of the substrate.

12. The substrate processing method according to claim 11, wherein: A hole opened toward the center of the substrate and holes opened toward both edge regions of the substrate are formed at the front end of the first gas supply portion.

13. The substrate processing method according to claim 11, wherein: A hole opening toward an edge region of the substrate is formed at a front end of the second gas supply portion.

14. The substrate processing method according to claim 11, wherein: The second gas supply part is arranged on both sides of the first gas supply part in the horizontal direction, In (a1), the supply amounts of the inert gas supplied from the second gas supply parts are equal.

15. The substrate processing method according to claim 1, wherein: In (a2), it is set that: a carrier gas is supplied in addition to the process gas, and the process gas reaches the central area of ​​the substrate during the undecomposed time of the process gas.

16. The substrate processing method according to claim 1, wherein: In (a1), the flow rate of the inert gas is set so that the processing gas reaches the edge region of the substrate during the non-decomposition time of the processing gas supplied to the central region of the substrate and the both edge regions of the substrate.

17. A method for manufacturing a semiconductor device, the method comprising using the substrate processing method according to claim 1.

18. A substrate processing device comprising: a substrate holding portion for holding the substrate, a first gas supply unit for supplying a raw material gas and an inert gas to the substrate held by the substrate holding unit; a second gas supply unit for supplying a reaction gas and an inert gas to the substrate held by the substrate holding unit, and A control unit is configured to control the first gas supply unit and the second gas supply unit to perform the following processing: (a1) supplying a processing gas from a central area on the side of the substrate toward a central area of ​​the substrate and two edge areas of the substrate, and in parallel, supplying an inactive gas from the side of the central area on the side of the substrate toward two edge areas of the substrate, so that a conveying speed of the raw material gas toward the edge area of ​​the substrate is faster than a conveying speed of the raw material gas toward the central area of ​​the substrate, (a2) supplying a processing gas from a central area of ​​a side of the substrate toward a central area of ​​the substrate and toward both edge areas of the substrate, and in parallel, supplying an inactive gas from a central area of ​​a side of the substrate toward the central area of ​​the substrate and toward both edge areas of the substrate, so that a conveying speed of the raw material gas toward the central area of ​​the substrate is faster than a conveying speed of the raw material gas toward the edge areas of the substrate, and (b) A process of supplying a reaction gas toward the substrate.

19. A recording medium having a program recorded thereon for causing a substrate processing apparatus to execute the following process via a computer: (a1) supplying a processing gas from a central area on the side of a substrate toward the central area of ​​the substrate and toward both edge areas of the substrate, and in parallel, supplying an inactive gas from the side of the central area on the side of the substrate toward both edge areas of the substrate, so that a conveying speed of the processing gas toward the edge area of ​​the substrate is faster than a conveying speed of the processing gas toward the central area of ​​the substrate, (a2) supplying a processing gas from the central area of ​​the side of the substrate toward the central area of ​​the substrate and the two edge areas of the substrate, and in parallel, supplying an inactive gas from the central area of ​​the side of the substrate toward the central area of ​​the substrate and the two edge areas of the substrate, so that the processing gas is transported faster toward the central area of ​​the substrate than toward the edge areas of the substrate, and (b) A process of supplying a reaction gas toward the substrate.

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