Processing methods, devices, and pressure control systems for pressure control systems

By controlling the adsorption and desorption processes of the substrate in the pressure control system and adjusting the pipeline temperature using a temperature control device, the problems of blockage and particulate contamination caused by thin film deposition were solved, and the stable operation of the system was achieved.

CN115840481BActive Publication Date: 2025-11-14PIOTECH (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202211535827.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-12-01
Publication Date
2025-11-14
Estimated Expiration
2042-12-01

AI Technical Summary

Technical Problem

Existing pressure control systems suffer from membrane accumulation due to byproducts and residual precursors during the process, causing blockages in valves and pipelines, and resulting in particulate contamination of the chambers during adsorption and desorption, requiring frequent replacement.

Method used

The adsorption and desorption processes of the substrate are controlled by an adsorption device, and the pipeline temperature is regulated by a temperature control device to hinder film deposition and prevent clogging and particulate contamination.

Benefits of technology

It effectively prevents thin film deposition, solving the problems of clogging and cavity particulate contamination in the pressure control system, eliminating the need for frequent component replacements.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention provides a processing method, apparatus, and pressure control system for a pressure control system. The method includes: when a substrate is placed on a heating device, controlling the adsorption device to reduce the internal pressure of the adsorption device based on valves and pumps, thus adsorbing the substrate onto the heating device; controlling the adsorption device to restore the internal pressure of the adsorption device based on valves and pumps, thus desorbing the substrate onto the heating device; and controlling a temperature control device to adjust the temperature of the adsorption device's piping. This allows for substrate adsorption and desorption via the adsorption device, and the temperature control device regulates the temperature of the adsorption device's piping to ensure that the temperature of the adsorption device's piping does not meet the temperature requirements for thin film deposition, thereby hindering thin film deposition and solving the problems of pressure control system blockage and cavity particulate contamination, eliminating the need for frequent replacements.
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Description

Technical Field

[0001] This invention relates to the field of pressure control technology, and in particular to a processing method, apparatus and pressure control system for a pressure control system. Background Technology

[0002] In existing technologies, byproducts and residual precursors can enter the deposited thin film during the process of pressure control systems. This accumulation of the film can cause blockages in valves and pipelines. Furthermore, the loose film during adsorption and desorption processes can lead to particulate contamination of the chamber under the influence of airflow. Therefore, existing pressure control systems require frequent replacements due to particulate accumulation. Summary of the Invention

[0003] In view of this, the purpose of the present invention is to provide a processing method, apparatus and pressure control system for pressure control system, so as to control the temperature of the pipeline of the adsorption device, prevent film deposition, solve the problems of pressure control system blockage and cavity particulate contamination, and eliminate the need for frequent replacement.

[0004] In a first aspect, embodiments of the present invention provide a processing method for a pressure control system, the method comprising: when a substrate is placed on a heating device, controlling an adsorption device to reduce the internal pressure of the adsorption device based on valves and pumps, thereby adsorbing the substrate onto the heating device; controlling the adsorption device to restore the internal pressure of the adsorption device based on valves and pumps, thereby releasing the substrate from the heating device; and controlling a temperature control device to adjust the temperature of the pipeline of the adsorption device.

[0005] In an optional embodiment of this application, the above method is applied to a pressure control system, which includes an adsorption device and a temperature control device. The pressure control system is connected to an external heating device, and the adsorption device includes a pump end and multiple valves.

[0006] In an optional embodiment of this application, the above-mentioned auxiliary system includes: a first valve, a second valve, and a third valve, wherein the heating device, the first valve, the third valve, and the pump end are connected in sequence.

[0007] In an optional embodiment of this application, the step of controlling the adsorption device to reduce the internal pressure of the adsorption device based on the valve and pump end to adsorb the substrate onto the heating device includes: opening the first valve and the third valve, closing the second valve, and adsorbing the substrate onto the heating device; the step of controlling the adsorption device to restore the internal pressure of the adsorption device based on the valve and pump end to release the substrate from the heating device includes: opening the first valve and the second valve, closing the third valve, and releasing the substrate from the heating device.

[0008] In an optional embodiment of this application, a pressure regulating valve and a throttle valve are provided between the second valve and the pump end; a pressure gauge is provided between the first valve and the second valve.

[0009] In an optional embodiment of this application, the adsorption device is externally fitted with a temperature control device; the temperature control device includes a heat exchange module, a fourth valve, and a fifth valve.

[0010] In an optional embodiment of this application, the step of adjusting the temperature of the pipeline of the adsorption device by the temperature control device includes: controlling the heat exchange module to output cooling material, and adjusting the temperature of the pipeline of the adsorption device based on the cooling material; wherein the cooling material is sequentially transported back to the heat exchange module through the fourth valve and the fifth valve.

[0011] In optional embodiments of this application, the above method further includes: opening the first valve, the third valve, and the fifth valve, closing the second valve and the fourth valve, drawing clean gas from the adsorption hole of the heating device into the adsorption pipeline of the adsorption device, and increasing the temperature of the adsorption pipeline; opening the first valve, the second valve, and the fifth valve, closing the third valve and the fourth valve, drawing clean gas from the adsorption hole of the heating device into the de-adsorption pipeline of the adsorption device, and increasing the temperature of the de-adsorption pipeline.

[0012] Secondly, embodiments of the present invention also provide a processing device for a pressure control system, the device comprising: a substrate adsorption module, used to control the adsorption device to reduce the internal pressure of the adsorption device based on valves and pumps when the substrate is placed on the heating device, thereby adsorbing the substrate onto the heating device; a substrate desorption module, used to control the adsorption device to restore the internal pressure of the adsorption device based on valves and pumps, thereby desorbing the substrate onto the heating device; and a temperature control module, used to control the temperature control device to adjust the temperature of the pipeline of the adsorption device.

[0013] Thirdly, embodiments of the present invention also provide a pressure control system for the processing method of the pressure control system described above.

[0014] The embodiments of the present invention bring the following beneficial effects:

[0015] This invention provides a method, apparatus, and pressure control system for a pressure control system. When a substrate is placed on a heating device, the adsorption device is controlled to reduce the internal pressure of the adsorption device based on valves and pumps, adsorbing the substrate onto the heating device; the adsorption device is then controlled to restore the internal pressure of the adsorption device based on valves and pumps, releasing the substrate from the heating device; and a temperature control device is used to adjust the temperature of the pipeline of the pressure adsorption device. In this method, substrate adsorption and desorption can be performed using the adsorption device, and the temperature of the pipeline of the adsorption device can be controlled by the temperature control device to ensure that the temperature of the pipeline does not meet the temperature conditions for thin film deposition, thereby hindering thin film deposition and solving the problems of pressure control system blockage and cavity particle contamination, eliminating the need for frequent replacement.

[0016] Other features and advantages of this disclosure will be set forth in the following description, or some features and advantages may be inferred from the description or determined without doubt, or may be learned by practicing the techniques described above.

[0017] To make the above-mentioned objects, features and advantages of this disclosure more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 A flowchart illustrating a processing method for a pressure control system provided in an embodiment of the present invention;

[0020] Figure 2 A schematic diagram of a pressure control system provided in an embodiment of the present invention;

[0021] Figure 3 A schematic diagram of the piping of a temperature control device provided in an embodiment of the present invention;

[0022] Figure 4 A flowchart of another pressure control system processing method provided in an embodiment of the present invention;

[0023] Figure 5 A schematic diagram of a deposition process provided in an embodiment of the present invention;

[0024] Figure 6 A schematic diagram of a cleaning process provided in an embodiment of the present invention;

[0025] Figure 7 A schematic diagram of the structure of a processing device for a pressure control system provided in an embodiment of the present invention;

[0026] Figure 8 This is a schematic diagram of a pressure control system provided in an embodiment of the present invention. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] Currently, pressure control systems often introduce byproducts and residual precursors into the deposited thin film during the process. This accumulation of the film causes blockages in valves and pipelines. Furthermore, the loose film during adsorption and desorption processes, combined with airflow, leads to particulate contamination of the chamber. Consequently, existing pressure control systems require frequent replacements due to particulate buildup.

[0029] Based on this, in order to solve the problem of frequent replacement of the pressure control system of the vacuum disk due to particle accumulation, the present invention provides a method, apparatus and pressure control system for processing the pressure control system. The pressure control system can be subjected to substrate adsorption and desorption by an adsorption device and temperature control of the pressure control system by a temperature control device to prevent thin film deposition, thereby solving the problems of blockage of the pressure control system and cavity particle contamination, and eliminating the need for frequent replacement.

[0030] To facilitate understanding of this embodiment, a processing method for a pressure control system disclosed in this embodiment of the invention will first be described in detail.

[0031] Example 1:

[0032] This invention provides a processing method for a pressure control system, see [link to relevant documentation]. Figure 1 The flowchart shown illustrates a processing method for a pressure control system, which includes the following steps:

[0033] Step S102: When the substrate is placed on the heating device, the adsorption device is controlled to reduce the internal pressure of the adsorption device based on the valve and pump end, so as to adsorb the substrate onto the heating device.

[0034] When the substrate is placed on the heating device, it needs to be adsorbed onto the heating device. At this time, the valve can be opened to control the pump to draw air out of the adsorption device, thereby reducing the pressure inside the adsorption device. The pressure inside the adsorption device is lower than the pressure inside the heating device, thus adsorbing the substrate onto the heating device.

[0035] Step S104: Control the adsorption device to restore the internal pressure of the adsorption device based on the valve and pump end, and release the substrate from adsorption onto the heating device.

[0036] After the substrate has been treated, its adsorption can be released. At this point, air can be pumped into the adsorption device to restore the previously reduced internal pressure. As the internal pressure of the adsorption device gradually recovers, the substrate is released from adsorption onto the heating device.

[0037] Step S106: Control the temperature control device to adjust the temperature of the pipeline of the adsorption device.

[0038] In this embodiment, the temperature of the pipeline of the pressure adsorption device can be adjusted by a temperature control device. The temperature control device can be wrapped around the adsorption device and lowers the temperature of the adsorption device by using a cooling substance (which can be liquid or non-liquid), thereby achieving the function of adjusting the temperature of the pipeline of the adsorption device. Therefore, if the temperature of the pipeline of the adsorption device does not meet the temperature conditions for thin film deposition, it will hinder thin film deposition.

[0039] This invention provides a method for processing a pressure control system. When a substrate is placed on a heating device, the adsorption device is controlled to reduce the internal pressure of the adsorption device based on valves and pumps, adsorbing the substrate onto the heating device; the adsorption device is then controlled to restore the internal pressure of the adsorption device based on valves and pumps, releasing the substrate from the heating device; and a temperature control device is used to adjust the temperature of the pipeline of the pressure adsorption device. In this method, substrate adsorption and desorption can be performed using the adsorption device, and the temperature of the pipeline of the adsorption device can be controlled by the temperature control device to ensure that the temperature of the pipeline does not meet the temperature conditions for thin film deposition, thereby hindering thin film deposition and solving the problems of pressure control system blockage and cavity particle contamination, eliminating the need for frequent replacement.

[0040] Example 2:

[0041] This embodiment provides another processing method for a pressure control system, which is implemented based on the above embodiment. The pressure control system includes an adsorption device and a temperature control device. The pressure control system is connected to an external heating device. The adsorption device includes a pump end and multiple valves. The adsorption device includes an adsorption pipeline and a de-adsorption pipeline. The pressure of the adsorption device can be reduced through the adsorption pipeline, and the pressure of the adsorption device can be restored through the de-adsorption pipeline.

[0042] See Figure 2 The diagram shows a pressure control system. The solid lines represent the adsorption device, and the dashed lines represent the temperature control device. The adsorption device includes a first valve, a second valve, and a third valve, while the temperature control device includes a heat exchange module, a fourth valve, and a fifth valve.

[0043] The pressure control system is connected to the adsorption hole at the bottom of the support column of the heating device. For example... Figure 2 As shown, the pressure control system includes an adsorption device and a temperature control device. The vacuum adsorption heating device can be symmetrically distributed within the substrate processing chamber. The pressure control system is connected to the bottom of the support column of the vacuum adsorption heating device and communicates with the adsorption holes on the support body of the heating device.

[0044] The adsorption device includes a first valve, a second valve, and a third valve. The heating device, the first valve, the third valve, and the pump end are connected in sequence.

[0045] In addition, a pressure regulating valve and a throttle valve can be installed between the second valve and the pump end; a pressure gauge can be installed between the first valve and the second valve.

[0046] like Figure 2 As shown, for the adsorption device: two gas pipelines of equal length are connected to the bottom of the support column and converge at the first valve. A pipeline from the first valve leads to the third valve, and a pipeline from the third valve connects to the throttle valve near the pump end to achieve silicon wafer adsorption. A pipeline between the first and third valves connects to the second valve, and a pipeline from the second valve connects to the upper end of the pressure regulating valve near the substrate processing chamber to achieve silicon wafer desorption. A pressure gauge is installed between the first and second valves to detect the pressure at the second valve.

[0047] The adsorption device is externally fitted with a temperature control device, which includes a heat exchange module, a fourth valve, and a fifth valve.

[0048] like Figure 2 As shown, for the temperature control device: the temperature control device is fitted over the vacuum adsorption device piping of the adsorption unit, see [reference needed]. Figure 3The diagram shows a piping configuration for a temperature control device, which can be either nested or wound. The piping of the temperature control device is connected to the heat exchange module, and valves (i.e., the fourth and fifth valves) are used to control the start and end of the temperature control system. The temperature control uses liquid or gas as the cooling medium and can maintain the temperature between 20-40℃.

[0049] Based on the above description, see Figure 4 The flowchart illustrates another processing method for a pressure control system, which includes the following steps:

[0050] In step S402, when the substrate is placed on the heating device, the adsorption device is controlled to reduce the internal pressure of the adsorption device based on the valve and pump end, so as to adsorb the substrate onto the heating device.

[0051] Specifically, in this embodiment, the first valve and the third valve can be opened, the second valve can be closed, and the substrate can be adsorbed onto the heating device.

[0052] See Figure 5 The diagram illustrates a deposition process where the pressure within the substrate processing chamber needs to be controlled between 0.02 and 600 torr. First, the substrate is transferred into the processing chamber and placed onto a vacuum adsorption heating device. During substrate adsorption, the first and third valves of the pressure control system are opened, while the second valve is closed, using the pressure difference to adsorb the substrate onto the vacuum adsorption heating device.

[0053] Step S404: Control the adsorption device to restore the internal pressure of the adsorption device based on the valve and pump end, and release the substrate from adsorption onto the heating device.

[0054] Specifically, in this embodiment, the first valve and the second valve can be opened, and the third valve can be closed, so that the substrate is released from adsorption onto the heating device.

[0055] like Figure 5 As shown, during substrate desorption, the third valve can be closed and the first and second valves opened to eliminate the pressure difference and remove the substrate from the vacuum adsorption heating device.

[0056] Step S406: The temperature control device adjusts the temperature of the pipeline of the adsorption device.

[0057] Specifically, in this embodiment, the output of cooling material from the heat exchange module can be controlled, and the temperature of the pipeline of the adsorption device can be adjusted based on the cooling material; wherein, the cooling material is sequentially transported back to the heat exchange module through the fourth valve and the fifth valve.

[0058] like Figure 5As shown, during substrate adsorption, the fourth and fifth valves of the temperature control device can be opened, and the temperature of the adsorption device can be controlled between 20-40℃. This reduces the temperature resistance and promotes film deposition within the adsorption pipeline, ensuring the reactant gas does not condense. In this embodiment, experiments have shown that a temperature >20℃ in the adsorption device is sufficient to prevent reactant gas condensation.

[0059] like Figure 5 As shown, during substrate desorption, the fourth and fifth valves of the temperature control system can be opened to control the adsorption system temperature at 20-40℃. This reduces the deposition of the thin film in the adsorption pipeline while ensuring that the reaction gas does not condense.

[0060] Step S408: The clean gas is drawn into the adsorption pipeline and de-adsorption pipeline of the adsorption device through the adsorption hole of the heating device.

[0061] In this embodiment, a method for cleaning the adsorption pipeline and desorption pipeline of the adsorption device is also provided. For example, the first valve, the third valve and the fifth valve are opened, the second valve and the fourth valve are closed, and the clean gas is drawn into the adsorption pipeline of the adsorption device from the adsorption hole of the heating device, and the temperature of the adsorption pipeline is increased; the first valve, the second valve and the fifth valve are opened, the third valve and the fourth valve are closed, and the clean gas is drawn into the desorption pipeline of the adsorption device from the adsorption hole of the heating device, and the temperature of the desorption pipeline is increased.

[0062] See Figure 6 The diagram shows a cleaning process. When cleaning the adsorption pipeline, the first and third valves can be opened and the second valve closed. Cleaning gas is introduced from the adsorption hole of the vacuum adsorption heating device and discharged to the pump end to clean the adsorption pipeline. The fourth valve of the temperature control device is closed and the fifth valve is opened, which raises the temperature of the adsorption device and improves the cleaning efficiency of the adsorption pipeline.

[0063] like Figure 6 As shown, when cleaning the desorption pipeline, the first and second valves are opened and the third valve is closed. The cleaning gas is introduced from the adsorption hole of the vacuum adsorption heating device and discharged to the pump end to clean the desorption pipeline. The fourth valve of the temperature control device is closed and the fifth valve is opened, the temperature of the adsorption device rises, and the cleaning efficiency of the adsorption pipeline is improved.

[0064] The method provided in this embodiment of the invention can perform substrate adsorption and desorption using an adsorption device, and control the temperature of the pressure control system using a temperature control device to prevent thin film deposition, thereby solving the problems of pressure control system blockage and cavity particle contamination, without the need for frequent replacement.

[0065] Example 3:

[0066] Corresponding to the above method embodiments, this invention provides a processing device for a pressure control system, applied to a pressure control system. The pressure control system includes an adsorption device and a temperature control device. The pressure control system is connected to an external heating device. The adsorption device includes a pump end and multiple valves. See also... Figure 7 The diagram shows a structural schematic of a processing device for a pressure control system. The processing device includes:

[0067] The substrate adsorption module 71 is used to control the adsorption device to reduce the internal pressure of the adsorption device based on valves and pumps when the substrate is placed on the heating device, so as to adsorb the substrate onto the heating device.

[0068] The substrate desorption module 72 is used to control the adsorption device to restore the internal pressure of the adsorption device based on the valve and pump end, thereby desorbing the substrate onto the heating device.

[0069] Temperature control module 73 is used to control the temperature control device to adjust the temperature of the pipeline of the adsorption device.

[0070] This invention provides a processing device for a pressure control system. When a substrate is placed on a heating device, the adsorption device is controlled to reduce the internal pressure of the adsorption device based on valves and pumps, adsorbing the substrate onto the heating device; the adsorption device is then controlled to restore the internal pressure of the adsorption device based on valves and pumps, releasing the substrate from the heating device; a temperature control device adjusts the temperature of the pipeline of the pressure adsorption device. In this method, substrate adsorption and desorption can be performed using the adsorption device, and the temperature of the pipeline of the adsorption device can be controlled by the temperature control device to ensure that the temperature of the pipeline does not meet the temperature conditions for thin film deposition, thereby hindering thin film deposition and solving the problems of pressure control system blockage and cavity particle contamination, eliminating the need for frequent replacement.

[0071] In an optional embodiment of the present invention, the above-described device is applied to a pressure control system, which includes an adsorption device and a temperature control device. The pressure control system is connected to an external heating device, and the adsorption device includes a pump end and multiple valves.

[0072] In an optional embodiment of the present invention, the adsorption device includes: a first valve, a second valve and a third valve, and a heating device, the first valve, the third valve and a pump end are connected in sequence.

[0073] In an optional embodiment of the present invention, the substrate adsorption module is used to open the first valve and the third valve, and close the second valve, so that the substrate is adsorbed onto the heating device; the substrate desorption module is used to open the first valve and the second valve, and close the third valve, so that the substrate is desorbed onto the heating device.

[0074] In an optional embodiment of the present invention, a pressure regulating valve and a throttle valve are provided between the second valve and the pump end; a pressure gauge is provided between the first valve and the second valve.

[0075] In an optional embodiment of the present invention, a temperature control device is fitted outside the adsorption device; the temperature control device includes a heat exchange module, a fourth valve, and a fifth valve.

[0076] In an optional embodiment of the present invention, the temperature control module is used to control the output of cooling material from the heat exchange module and adjust the temperature of the pipeline of the adsorption device based on the cooling material; wherein the cooling material is sequentially transported back to the heat exchange module through the fourth valve and the fifth valve.

[0077] In an optional embodiment of the present invention, the above-mentioned device includes: a pipeline cleaning module, used to open the first valve, the third valve and the fifth valve, close the second valve and the fourth valve, draw clean gas from the adsorption hole of the heating device into the adsorption pipeline of the adsorption device, and increase the temperature of the adsorption pipeline; open the first valve, the second valve and the fifth valve, close the third valve and the fourth valve, draw clean gas from the adsorption hole of the heating device into the de-adsorption pipeline of the adsorption device, and increase the temperature of the de-adsorption pipeline.

[0078] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the processing device of the pressure control system described above can be referred to the corresponding process in the embodiments of the aforementioned pressure control system processing method, and will not be repeated here.

[0079] Example 4:

[0080] This invention also provides a pressure control system and a processing method for operating the aforementioned pressure control system; see [link to documentation]. Figure 8 The diagram shows a structural schematic of a pressure control system, which includes a memory 100 and a processor 101. The memory 100 stores one or more computer instructions, which are executed by the processor 101 to implement the processing method of the pressure control system described above.

[0081] Furthermore, Figure 8 The pressure control system shown also includes a bus 102 and a communication interface 103. The processor 101, the communication interface 103 and the memory 100 are connected via the bus 102.

[0082] The memory 100 may include high-speed random access memory (RAM) or non-volatile memory, such as at least one disk storage device. Communication between this system network element and at least one other network element is achieved through at least one communication interface 103 (which can be wired or wireless), such as the Internet, wide area network, local area network, or metropolitan area network. The bus 102 may be an ISA bus, PCI bus, or EISA bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 8 The symbol is represented by a single double-headed arrow, but this does not mean that there is only one bus or one type of bus.

[0083] Processor 101 may be an integrated circuit chip with signal processing capabilities. In implementation, each step of the above method can be completed by the integrated logic circuitry in the hardware of processor 101 or by instructions in software form. Processor 101 can be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it can also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this invention. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of this invention can be directly manifested as execution by a hardware decoding processor, or execution by a combination of hardware and software modules in the decoding processor. The software module can reside in a readily available storage medium in the art, such as random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, or registers. This storage medium is located in memory 100, and processor 101 reads information from memory 100 and, in conjunction with its hardware, completes the steps of the method described in the foregoing embodiments.

[0084] This invention also provides a computer-readable storage medium storing computer-executable instructions. When these computer-executable instructions are called and executed by a processor, they cause the processor to implement the aforementioned processing method of the pressure control system. For specific implementation details, please refer to the method embodiments, which will not be repeated here.

[0085] The pressure control system processing method, apparatus, and computer program product of the pressure control system provided in the embodiments of the present invention include a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the methods in the preceding method embodiments. For specific implementation, please refer to the method embodiments, which will not be repeated here.

[0086] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the system and / or device described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0087] Furthermore, in the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0088] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, essentially, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0089] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0090] Finally, it should be noted that the above-described embodiments are merely specific implementations of the present invention, used to illustrate the technical solutions of the present invention, and not to limit it. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments within the technical scope disclosed in the present invention, or make equivalent substitutions for some of the technical features; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A processing method for a pressure control system, characterized in that, The method includes: When the substrate is placed on the heating device, the adsorption device is controlled to reduce the internal pressure of the adsorption device based on the valve and pump end, so as to adsorb the substrate onto the heating device. The adsorption device is controlled to restore the internal pressure of the adsorption device based on the valve and the pump end, thereby releasing the substrate from adsorption onto the heating device; The temperature control device adjusts the temperature of the pipeline in the adsorption device. The method is applied to a pressure control system, which includes an adsorption device and a temperature control device. The pressure control system is connected to an external heating device. The adsorption device includes a pump end and multiple valves. The adsorption device includes a first valve, a second valve, and a third valve. The heating device, the first valve, the third valve, and the pump end are connected in sequence. The temperature control device includes a heat exchange module, a fourth valve, and a fifth valve; the method further includes: opening the first valve, the third valve, and the fifth valve, closing the second valve and the fourth valve, drawing clean gas from the adsorption port of the heating device into the adsorption pipeline of the adsorption device, and increasing the temperature of the adsorption pipeline; opening the first valve, the second valve, and the fifth valve, closing the third valve and the fourth valve, drawing the clean gas from the adsorption port of the heating device into the de-adsorption pipeline of the adsorption device, and increasing the temperature of the de-adsorption pipeline.

2. The processing method of the pressure control system according to claim 1, characterized in that, The step of controlling the adsorption device to reduce the internal pressure of the adsorption device based on valves and pumps, and adsorbing the substrate onto the heating device, includes: Open the first valve and the third valve, close the second valve, and the substrate is adsorbed onto the heating device; The step of controlling the adsorption device to restore the internal pressure of the adsorption device based on the valve and the pump end, and releasing the substrate from the heating device, includes: Open the first valve and the second valve, and close the third valve, so that the substrate is released from adsorption onto the heating device.

3. The processing method of the pressure control system according to claim 1, characterized in that, A pressure regulating valve and a throttle valve are provided between the second valve and the pump end; a pressure gauge is provided between the first valve and the second valve.

4. The processing method of the pressure control system according to claim 1, characterized in that, The temperature control device is fitted onto the outside of the adsorption device.

5. The processing method of the pressure control system according to claim 4, characterized in that, The step of adjusting the temperature of the pipeline of the adsorption device by controlling the temperature control device includes: The heat exchange module is controlled to output a cooling substance, and the temperature of the pipeline of the adsorption device is adjusted based on the cooling substance; wherein the cooling substance is sequentially transported back to the heat exchange module through the fourth valve and the fifth valve.

6. A processing device for a pressure control system, characterized in that, The device includes: A substrate adsorption module is used to control the adsorption device to reduce the internal pressure of the adsorption device based on valves and pumps when the substrate is placed on the heating device, so as to adsorb the substrate onto the heating device. A substrate desorption module is used to control the adsorption device to restore the internal pressure of the adsorption device based on the valve and the pump end, thereby desorbing the substrate onto the heating device. A temperature control module is used to control the temperature control device to adjust the temperature of the pipeline of the adsorption device; The device is applied to a pressure control system, which includes an adsorption device and a temperature control device. The pressure control system is connected to an external heating device. The adsorption device includes a pump end and multiple valves. The adsorption device includes a first valve, a second valve, and a third valve. The heating device, the first valve, the third valve, and the pump end are connected in sequence. The temperature control device includes a heat exchange module, a fourth valve, and a fifth valve; the device further includes a pipeline cleaning module, used to open the first valve, the third valve, and the fifth valve, and close the second valve and the fourth valve, to draw clean gas from the adsorption port of the heating device into the adsorption pipeline of the adsorption device, and to increase the temperature of the adsorption pipeline; and to open the first valve, the second valve, and the fifth valve, and close the third valve and the fourth valve, to draw the clean gas from the adsorption port of the heating device into the de-adsorption pipeline of the adsorption device, and to increase the temperature of the de-adsorption pipeline.

7. A pressure control system, characterized in that, A processing method for performing the pressure control system according to any one of claims 1-5.

Citation Information

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