Furnace mouth structure, substrate processing device, and method for manufacturing semiconductor device

Abstract

The present invention provides a furnace mouth structure, a substrate processing device, and a method for manufacturing a semiconductor device, which can suppress metal contamination of a substrate caused by components constituting the furnace mouth. According to one embodiment of the present disclosure, the furnace mouth structure comprises: an upper inlet, which is connected to a first protrusion disposed at the lower portion of a reaction tube via a first sealing component and supports the reaction tube; a lower inlet, which is connected to the upper inlet via a second sealing component; and a fixing ring, which is connected to the upper inlet and fixes the first protrusion, and is configured as follows: the upper inlet is arranged below an exhaust pipe disposed at the lower portion of the reaction tube, so that a cooling medium flows through a flow path disposed inside each of the upper inlet and the fixing ring, thereby cooling the first protrusion.

Description

Technical Field

[0001] The present invention relates to a furnace opening structure, a substrate processing device, and a method for manufacturing a semiconductor device. Background Art

[0002] As one of the steps in the manufacturing process of semiconductor devices, a process of forming a film on a substrate is performed (see, for example, Patent Documents 1 and 2). At this time, there is a possibility that particles or metal contamination may occur from the members constituting the furnace opening.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-266337

[0006] Patent Document 2: International Publication No. 2016 / 125626 Summary of the invention

[0007] Problems to be solved by the invention

[0008] The present disclosure provides a technology for suppressing metal contamination of a substrate originating from a member constituting a furnace opening.

[0009] Solutions to Solve Problems

[0010] According to one aspect of the present disclosure, the following technology is provided, which comprises:

[0011] An upper inlet portion connected to a first protrusion provided at a lower portion of the reaction tube via a first sealing member and supporting the reaction tube;

[0012] a lower inlet portion connected to the upper inlet portion via a second sealing member; and

[0013] a fixing ring connected to the upper inlet portion and fixing the first protrusion,

[0014] And constituted as:

[0015] The upper inlet is disposed below an exhaust pipe provided at a lower portion of the reaction tube, and the first protrusion can be cooled by allowing a cooling medium to flow through flow paths provided inside the upper inlet and the fixing ring.

[0016] Effects of the Invention

[0017] According to the present disclosure, it is possible to suppress the metal contamination of the substrate caused by the members constituting the furnace mouth portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1This is a schematic structural diagram of a substrate processing apparatus preferably used in an embodiment of the present disclosure.

[0019] Figure 2 This is a cross-sectional view showing the lower end of a reaction tube preferably used in an embodiment of the present disclosure, that is, the periphery of a furnace mouth.

[0020] Figure 3 This is a cross-sectional view showing the vicinity of a furnace opening portion to which an exhaust pipe is connected, which is the lower end of a reaction tube preferably used in an embodiment of the present disclosure.

[0021] Figure 4 This is a perspective view for explaining a fixing ring and an upper inlet portion preferably used in an embodiment of the present disclosure.

[0022] Figure 5 It is a schematic structural diagram of a controller of a substrate processing apparatus preferably used in an embodiment of the present disclosure, and is a block diagram showing a control system of the controller.

[0023] Figure 6 This is a graph showing the temperature of the outer wall of the lower inlet portion of the comparative example.

[0024] Figure 7 This is a graph showing the temperature of the lower portion of the sealing cap corresponding to the lower side of the lower inlet portion of the comparative example.

[0025] Figure 8 This is a graph showing the temperature of the outer wall of the lower inlet portion of the present disclosure.

[0026] Fig. 9 : is a graph which shows the temperature of the lower part of the sealing cover corresponding to the lower side of the lower inlet part of this disclosure.

[0027] In the figure:

[0028] 100: substrate processing device; 203: reaction tube; 209: furnace mouth; 2091: upper inlet; 2092: lower inlet; 229: fixing ring (ring part). DETAILED DESCRIPTION

[0029] <Embodiments of the present disclosure>

[0030] The following are the main references Figure 1 to Figure 5 To illustrate the embodiments of the present disclosure. In addition, the drawings used in the following description are all schematic diagrams, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. are not necessarily consistent with the actual ones. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. are not necessarily consistent with each other in the drawings.

[0031] like Figure 1As shown, the processing furnace 202 of the substrate processing apparatus 100 has a heater 207 as a heating unit (heating mechanism). The heater 207 is cylindrical and supported by a heater base as a holding plate so as to be vertically installed.

[0032] A reaction tube 203 is disposed concentrically with the heater 207 inside the heater 207. The reaction tube 203 is composed of an outer tube 2031 and an inner tube 2032 disposed inside the outer tube 2031. The reaction tubes 203 (2031, 2032) are made of, for example, quartz (SiO 2 ), silicon carbide (SiC) and other heat-resistant materials. The outer tube 2031 is formed into a cylindrical shape with an upper end closed and a lower end open. The outer tube 2031 is arranged to surround the inner tube 2032 on the outside of the inner tube 2032. Below (at the lower end) of the outer tube 2031, there are formed: a protrusion (also called a first protrusion or a flange) 203A protruding all the way to the outer circumference; and an extension (also called a second protrusion) 203B extending downward from the protrusion 203A. The inner tube 2032 is formed into a cylindrical shape with an upper end and a lower end open. A processing chamber 201 is formed in the hollow portion of the inner tube 2032, and is configured to be able to store the wafer 200 as a substrate in a horizontal posture in a state of neatly arranged in multiple layers in the vertical direction using a wafer boat 217 as a substrate holder.

[0033] An exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided below the reaction tube 203. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector and an APC (Auto Pressure Controller) valve 243 as a pressure regulator. The opening of the APC valve 243 is adjusted based on the pressure information detected by the pressure sensor 245, so that vacuum exhaust can be performed in a manner that the pressure in the processing chamber 201 becomes a predetermined pressure (vacuum degree). In addition, the APC valve 243 is an on-off valve that can perform vacuum exhaust or stop vacuum exhaust in the processing chamber 201 by opening and closing the valve, and is configured to adjust the valve opening to adjust the pressure in the processing chamber 201.

[0034] like Figure 1 As shown, a furnace mouth portion (sometimes also referred to as an inlet or header) 209 formed concentrically with the reaction tube 203 is provided at the lower portion of the reaction tube 203. The furnace mouth portion 209 is made of metal such as stainless steel (SUS material) or nickel (Ni) alloy. The furnace mouth portion 209 is composed of an upper inlet portion 2091 and a lower inlet portion 2092, and each is formed in a cylindrical shape with an upper end and a lower end opened.

[0035] In addition, Figure 1, the first nozzle 233a, the second nozzle 233b, and the third nozzle 233c are represented as one nozzle. Furthermore, the first nozzle 233a (the second nozzle 233b, the third nozzle 233c) are L-shaped with a horizontal portion and a vertical portion, and the horizontal portion is connected to the side wall of the furnace mouth portion 209, and the vertical portion is erected in the arc-shaped space between the inner wall of the inner tube 2032 and the wafer 200 from the lower part of the inner tube 2032 along the upper inner wall toward the loading direction of the wafer 200. Supply holes for supplying processing gas, namely, the first gas supply hole 248a (the second gas supply hole 248b, the third gas supply hole 248c) are respectively provided on the side of the vertical portion of the first nozzle 233a (the second nozzle 233b, the third nozzle 233c).

[0036] In this embodiment, the first nozzle 233a is connected to the gas supply unit 232a for supplying the first process gas, the second nozzle 233b is connected to the gas supply unit 232b for supplying the second process gas, and the third nozzle 233c is connected to the gas supply unit 232c for supplying the third process gas.

[0037] The upper inlet 2091 is provided to support from the lower side the protrusion (also referred to as a first protrusion or flange) 203A provided at the lower end of the outer tube 2031. An O-ring 220a as a first sealing member is provided between the upper surface of the upper inlet 2091 and the lower surface of the protrusion 203A of the outer tube 2031. The upper inlet 2091 is arranged below the exhaust pipe 231 provided at the lower portion of the reaction tube 203.

[0038] The lower inlet portion 2092 has an upper surface 2092c, and the upper surface 2092c of the lower inlet portion 2092 is provided to support the lower end of the upper inlet portion 2091 and the lower end of the inner tube 2032 from the lower side. An O-ring 220b is provided between the lower surface of the upper inlet portion 2091 and the upper surface 2092c of the lower inlet portion 2092 as a second sealing member.

[0039] The fixing ring (also referred to as the ring portion) 229 is provided on the upper side of the upper inlet portion 2091 and on the upper side of the protruding portion 203A of the outer tube 2031. The fixing ring 229 provided on the upper side of the upper inlet portion 2091 is configured to be connected to the upper inlet portion 2091 and to fix the protruding portion 203A from above. The cross-sectional shape of the connection portion between the upper inlet portion 2091 and the fixing ring 229 is in a U-shape (a horizontally inverted U-shape). Thus, the outer tube 2031 is stably fixed.

[0040] Flow paths 240 and 241 (first flow path 240 and second flow path 241) through which a cooling medium such as liquid (e.g., water) can flow are respectively provided inside the upper inlet 2091 and the fixing ring 229. The protrusion 203A can be cooled by circulating the cooling medium in the flow paths 240 and 241. Thus, a structure can be provided in which the temperature of each component (upper inlet 2091, lower inlet 2092, etc.) constituting the furnace mouth 209 is within a predetermined temperature range. In addition, since the cooling medium is a liquid, the temperature of each component (upper inlet 2091, lower inlet 2092, etc.) constituting the furnace mouth 209 can be efficiently cooled compared to air cooling (cooling using a gas such as air). In addition, the first sealing member 220a is configured to perform heat protection using the cooling medium circulating in the flow path 240.

[0041] The flow paths 240 and 241 are arranged so as to sandwich the protrusion 203A of the outer tube 2031 from above and below. That is, the flow path 241 of the upper inlet 2091 is arranged on the lower side of the protrusion 203A, and the flow path 241 of the fixing ring 229 is arranged on the upper side of the protrusion 203A. The flow paths 240 and 241 are configured so as to sandwich the protrusion 203A, which is the first protrusion of the reaction tube 203, so that the cooling medium is arranged above and below the protrusion 203A. The contact area with the protrusion 203A of the reaction tube 203 can be increased, and the reaction tube 203 can be efficiently cooled.

[0042] like Figure 2 As shown, a protrusion (also referred to as a second protrusion) 203B is provided at the lower end of the outer tube 2031, and the protrusion 203B is configured to cover at least a portion of the inner wall 2091b of the upper inlet 2091. The protrusion 203B is configured to protrude toward the lower end of the outer tube 2031 in a manner that does not abut against the upper surface 2092c of the lower inlet 2092 and covers the inner wall 2091b of the upper inlet 2091. Thus, it is possible to suppress the by-products generated in the processing space of the reaction tube 203 having a structure in a reduced pressure state from being attached to the inner wall 2091b of the upper inlet 2091. In addition, by reducing (or narrowing) the distance between the protrusion 203B and the inner wall 2091b of the upper side inlet 2091, unnecessary temperature drop of the inner wall 2091b of the upper side inlet 2091 can be suppressed, thereby suppressing the adhesion of by-products to the inner wall 2091b of the upper side inlet 2091.

[0043] The protrusion 203B is configured to be close to the inner wall 2091b of the upper inlet 2091 so as to increase the temperature of the surface of the inner wall 2091b of the upper inlet 2091. The protrusion 203B is configured to be close to the lower inlet 2092 so as to suppress the contact between the surface of the inner wall 2091b of the upper inlet 2091 and the (exhaust) gas.

[0044] A sealing cover (also referred to as a cover) 219 as a furnace port cover is provided below (at the lower end) the lower inlet 2092, and the sealing cover can hermetically close the lower end opening of the lower inlet 2092. The sealing cover 219 can abut against the lower end of the lower inlet 2092 from the vertical lower side. The sealing cover 219 is made of metal such as stainless steel and is formed in a disc shape. An O-ring 220c as a third sealing member is provided on the upper surface of the sealing cover 219, and the O-ring 220c abuts against the lower end of the lower inlet 2092 (the lower surface 2092d of the lower inlet 2092). The space surrounded by the reaction tube 203, the upper inlet 2091, the lower inlet 2092, and the cover 219 is sealed so as to be decompressed by the first sealing member 220a, the second sealing member 220b, and the third sealing member 220c. In this way, a reaction container is formed by the reaction tube 203 , the furnace mouth 209 ( 2091 , 2092 ), and the sealing cover 219 .

[0045] The inlet heater 207a and the temperature sensor (also referred to as a temperature switch) 208 are provided on the outer side of the outer wall 2092a of the lower inlet portion 2092. The inlet heater 207a is used as a heating portion for heating the outer wall 2092a of the lower inlet portion 2092. The temperature sensor 208 is used to measure the temperature of the outer wall 2092a of the lower inlet portion 2092. The inlet heater 207a can heat the outer wall 2092a of the lower inlet portion 2092, so that excessive cooling of the lower inlet portion 2092 due to the influence of the upper inlet portion 2091 cooled by the cooling medium can be suppressed. In addition, the temperature sensor 208 detects the temperature of the outer wall 2092a of the lower inlet 2092 (when the outer wall 2092a is heated), thereby detecting excessive cooling of the lower inlet 2092, thereby suppressing excessive cooling of the lower inlet 2092 due to the influence of the upper inlet 2091 cooled by the cooling medium (such as liquid). In addition, a sealing cover heater for heating the sealing cover 219 may be provided on the lower side of the sealing cover 219.

[0046] A rotating mechanism 267 for rotating a wafer boat 217, which will be described later, is provided on the side of the sealing cover 219 opposite to the processing chamber 201. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217, and is configured to be able to move the wafer 200 by rotating the wafer boat 217. The wafer boat 217 and the sealing cover 219 are configured to be able to be lifted and lowered in the vertical direction by a wafer boat elevator 215 as a lifting mechanism disposed outside the reaction tube 203, and the wafer boat 217 can be moved into or out of the processing chamber 201 by the wafer boat elevator 215. The wafer boat 217 is made of, for example, quartz (SiO 2 ), silicon carbide (SiC), etc.

[0047] In addition, a substrate made of, for example, quartz (SiO 2 ), a heat insulating component 218 made of a heat-resistant material such as silicon carbide (SiC), and is configured to prevent heat from the heater 207 from being easily conducted to the sealing cover 219 side.

[0048] like Figure 3 As shown in the figure, an exhaust pipe 231 is provided at the lower end of the outer tube 2031 of the reaction tube 203. The outer tube 2031 is configured such that the thickness t1 of the portion where the exhaust pipe 231 is provided is greater than the thickness t2 of the portion other than the portion where the exhaust pipe 231 is provided (t1>t2). In addition, a structure is adopted in which the fixing ring 229 is not provided at the portion corresponding to the lower portion of the exhaust pipe 231, that is, the upper side of the protruding portion 203A of the outer tube 2031. Thus, the exhaust pipe 231 can be provided in the reaction tube 203, and the metal parts (fixing ring 229) constituting the furnace port 209 can be reduced, thereby suppressing the risk of metal contamination.

[0049] like Figure 4 As shown, the fixing ring 229 adopts a C-shaped structure formed by removing the area 231R where the exhaust pipe 231 is set. The fixing ring 229 has: a refrigerant supply part IN1 for supplying a cooling medium, a connection output part OUT1 for outputting the cooling medium supplied from the refrigerant supply part IN1, a connection input part IN2 connected to the connection output part OUT1, and a refrigerant discharge part OUT2 for outputting the cooling medium supplied to the input part IN2. On the other hand, the upper inlet part 2091 has: a refrigerant supply part IN3 for supplying a cooling medium, and a refrigerant discharge part OUT3 for outputting the cooling medium supplied from the refrigerant supply part IN3. That is, the refrigerant supply parts IN1 and IN3 for independently supplying the cooling medium are respectively provided in the upper inlet part 2091 and the fixing ring 229. By configuring in this way, it is possible to provide a structure that allows each component (upper inlet part 2091, lower inlet part 2092, etc.) constituting the furnace mouth part to be within a predetermined temperature range.

[0050] (Controller)

[0051] like Figure 5 As shown, the control unit (control unit), i.e., the controller 280, is composed of a computer, which includes: a CPU (Central Processing Unit) 280a, a RAM (Random Access Memory) 280b, a storage device 280c, and an I / O port 280d. The RAM 280b, the storage device 280c, and the I / O port 280d are configured to be able to exchange data with the CPU 280a via an internal bus 280e. The controller 280 is connected to an input / output device 122, such as a touch panel.

[0052] The storage device 280c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage device 280c stores in a readable manner: a control program for controlling the operation of the substrate processing device; a process recipe that records the steps, conditions, etc. of the substrate processing described later, etc. The process recipe is combined and functions as a program in order to enable the controller 280 to execute each step in the substrate processing process described later to obtain a predetermined result. Hereinafter, the process recipe, control program, etc. are also simply referred to as programs. In this specification, the meaning of "program" includes: only the process recipe alone, only the control program alone, or both. RAM280b is configured as a storage area (working area) that temporarily holds the programs, data, etc. read by CPU280a.

[0053] The I / O port 280d is connected to: an MFC (mass flow controller) and an opening and closing valve (not shown) which serve as flow control devices for respectively controlling the flow rates of the gases flowing in the above-mentioned gas supply parts 232a, 232b, and 232c, a pressure sensor 245, an APC valve 243, a vacuum pump 246, heaters 207, 207a, a temperature sensor 208, a rotating mechanism 267, a wafer boat elevator 215, etc.

[0054] The CPU 280a reads the control program from the storage device 280c and executes it, and is configured to read the process recipe from the storage device 280c according to the operation instruction input from the input / output device 122. The CPU 280a controls the operation of the APC valve 243, the heaters 207, 207a, the vacuum pump 246, the rotating mechanism 267, the wafer boat elevator 215, etc. according to the content of the read process recipe. The CPU 280a is configured to be able to control the inlet heater 207a according to the signal from the temperature sensor 208. The CPU 280a controls the inlet heater 207a to be turned on and off based on the detected temperature of the temperature sensor 208.

[0055] The storage unit 280c stores data indicating the correlation between the set temperature (processing temperature) of the heating means, namely the heater 207, and the temperature of the pre-specified portion of the upper entrance 2091 and the pre-specified portion of the lower entrance 2092. The set temperature of the heater 207 can be adjusted to be higher than the first temperature (420°C).

[0056] Then, the CPU 280a refers to the data indicating the correlation and controls the inlet heater 207a provided at the lower inlet portion 2092 according to the set temperature of the heater 207. If the set temperature of the heater 207 is, for example, above the first temperature (T1), the inlet heater 207a provided at the outer wall 2092a of the lower inlet portion 2092 is turned off. On the other hand, if the set temperature of the heater 207 is lower than the first temperature (T1), the inlet heater 207a is turned on, and the temperature of each component (upper inlet portion 2091, lower inlet portion 2092) constituting the furnace mouth portion 209 can be controlled within a predetermined temperature range. In addition, the outer wall 2092a can be heated, so that a structure can be provided that suppresses excessive cooling of the inner wall of the upper inlet portion 2091 and the lower inlet portion 2092 by the cooling medium.

[0057] Here, the so-called predetermined temperature range refers to: a temperature above (gasification temperature of byproducts) at which the components constituting the furnace opening 209 do not adhere to the byproducts, and a temperature below which metal contamination does not occur in the components constituting the furnace opening 209. For example, the predetermined temperature range may be a temperature range of 180° C. to 350° C. Therefore, it is possible to provide a structure that allows the components constituting the furnace opening 209 (upper inlet 2091, lower inlet 2092, etc.) to be within the predetermined temperature range.

[0058] In addition, in the present embodiment, there is a structure in which the temperature of each component constituting the furnace mouth portion 209 (upper inlet portion 2091, lower inlet portion 2092, etc.) is kept within a predetermined temperature range, thereby being able to suppress the adhesion of by-products generated in the processing space having the structure of the double reaction tubes 203 (2031, 2032).

[0059] The controller 280 is not limited to being composed of a dedicated computer, but can also be composed of a general-purpose computer. For example, an external storage device (for example, a magnetic disk such as a magnetic tape, a floppy disk, a hard disk, an optical disk such as a CD, a DVD, an optical magnetic disk such as an MO, a USB memory, a semiconductor memory such as a memory card) 123 storing the above-mentioned program is prepared, and the external storage device 123 is used to install the program to a general-purpose computer, etc., so that the controller 280 of this embodiment can be constructed. However, the means of providing the program to the computer is not limited to the case of supplying it via the external storage device 123. For example, instead of using the external storage device 123, the program can be provided using communication means such as the Internet and a dedicated line. The storage device 280c and the external storage device 123 are composed of a computer-readable storage medium. Hereinafter, these are also simply collectively referred to as storage media. In this specification, the meaning of "storage medium" includes: only the storage device 280c monomer, only the external storage device 123 monomer, or both. The following data can be stored in the external storage device 123 for reference by the controller 280 (CPU280a), wherein the data represents: the set temperature (processing temperature) of the heating mechanism, i.e., the heater 207, and the correlation with the temperature of a pre-designated portion of the upper entrance portion 2091 and a pre-designated portion of the lower entrance portion 2092.

[0060] Next, refer to Figures 6 to 9 The comparative example and the configuration example of the present disclosure are described with respect to the temperature of the outer wall 2092a of the lower inlet 2092 and the temperature of the lower portion (outer side) of the sealing cover 219 corresponding to the lower side of the lower inlet 2092. Here, Figure 6 , Figure 7 This is a case where the inlet heater 207a is not provided on the outer wall 2092a of the lower inlet portion 2092. Figure 8 , Fig. 9 This is the case where an inlet heater 207a is provided on the outer wall 2092a of the lower inlet portion 2092.

[0061] exist Figures 6 to 9 The temperature of each part (outer wall 2092a of lower inlet 2092, lower part of sealing cover 219 corresponding to the lower side of lower inlet 2092) is shown in the case where the set temperature of heater 207 shown as the furnace heater is T0 (350°C) to T2 (850°C), and the temperature of cooling water as the cooling medium is constant at 50°C. Figure 8 , Fig. 9The case is as follows: only when the set temperature of the inlet heater 207a is 180°C and the set temperature of the in-furnace heater 207 is between T0 and T1 (i.e., the set temperature of the heater 207 is below T1 which is the first temperature), the inlet heater 207a is controlled to be in the on state, and when the set temperature of the in-furnace heater 207 is above T1 which is the first temperature, the inlet heater 207a is controlled to be in the off state.

[0062] like Figure 6 As shown, regarding the temperature of the outer wall 2092a of the lower inlet 2092, the set temperature of the heater 207 is below t1, and a temperature drop due to overcooling occurs (below 180°C), which may cause the risk of by-product adhesion. On the other hand, regarding the temperature of the outer wall 2092a of the lower inlet 2092, even when the set temperature of the heater 207 is t2, it can be suppressed to be lower than the temperature (350°C) at which metal contamination occurs, thereby reducing the risk of metal contamination.

[0063] like Figure 7 As shown, regarding the temperature of the lower portion of the sealing cover 219, the set temperature of the heater 207 is below t3, resulting in a temperature drop due to overcooling (below 180°C), which has the risk of by-product adhesion. In addition, regarding the temperature of the lower portion of the sealing cover 219, the set temperature of the heater 207 is about t4 or above, which is higher than the temperature (350°C) at which metal contamination occurs, and thus there is a risk of metal contamination.

[0064] like Figure 8 As shown, regarding the temperature of the outer wall 2092a of the lower inlet 2092, an inlet heater 207a or the like is used, so that the temperature range of the set temperature of the heater 207 is a predetermined temperature range, that is, a temperature range above the temperature at which byproducts do not adhere (the vaporization temperature of byproducts: here is 180°C) and below the temperature at which metal contamination does not occur (here is below 350°C). Therefore, the gas contact portion (inner wall) of the lower inlet 2092 is also in a predetermined temperature range in the range of the set temperature of the heater 207 from T0 to T2, thereby reducing the risk of byproduct adhesion and also reducing the risk of metal contamination. It is preferred that the gas contact portion (inner wall) of the lower inlet 2092 is coated to form a coating film. If a coating film is formed on the gas contact portion (inner wall) of the lower inlet 2092 in this way, the adhesion of byproducts to the gas contact portion (inner wall) of the lower inlet 2092 can be further prevented. Here, the gas contacting portion (inner wall) of the lower inlet portion 2092 refers to the inner wall of the reaction container formed by the reaction tube 203 , the furnace mouth portion 209 ( 2091 , 2092 ), and the sealing cover 219 that contacts the gas.

[0065] like Fig. 9As shown, regarding the temperature of the lower portion of the sealing cover 219, the inlet heater 207a or the like is used, and the set temperature of the heater 207 is in the range of T0 to T2', which is a predetermined temperature range.

[0066] like Figure 8 , Fig. 9 As shown, by using an inlet heater 207a, etc., when the set temperature of the heater 207 is in the range of T0 to T2', the temperature of the outer wall 2092a of the lower inlet portion 2092 and the temperature of the lower portion of the sealing cover 219 can be within a predetermined temperature range, thereby reducing the adhesion of by-products and metal contamination.

[0067] (Substrate processing step)

[0068] Next, a method for manufacturing a semiconductor device according to an embodiment of the present disclosure is described. The method for manufacturing a semiconductor device is described by taking the following example, that is, preparing Figure 1 The CVD apparatus shown in the figure is a substrate processing apparatus 100 (a preparation process of the substrate processing apparatus), a substrate 200 is carried into a processing chamber 201 of the substrate processing apparatus 100 (a process of carrying a substrate into the processing chamber), an ammonia annealing process is performed on the wafer 200 in the processing chamber 201, and then silicon nitride (Si 3 N 4 )The process of treating the film (the process of treating the substrate).

[0069] The wafer transfer device is used to load a plurality of wafers 200 into the wafer boat 217 in a state where the wafers are parallel to each other and their center lines are aligned (wafer loading). Figure 1 As shown, a wafer boat 217 loaded with a plurality of wafers 200 is carried into the processing chamber 201 from the furnace opening 209 as the sealing cover 219 is raised by the wafer boat elevator 215 , and is placed in the processing chamber 201 in a state supported by the sealing cover 219 (wafer boat introduction).

[0070] At this time, the heater 207 is used to heat the processing chamber 201 so that the temperature of the processing chamber 201 is uniformly set to a predetermined temperature or a predetermined temperature distribution. In this state, the O-ring 220c of the sealing cover 219 is in a state of hermetically sealing the furnace mouth 209. At this time, cooling water flows through the flow paths 241 and 240 respectively to cool the upper inlet 2091 and the fixing ring 229. At this time, the controller 280 controls the inlet heater 207a based on the set temperature of the heater 207 and the temperature detection result from the temperature sensor 208, and maintains the temperature of the lower inlet 2092 and the outer peripheral edge of the sealing cover 219 at a predetermined value set in advance.

[0071] Next, exhaust is performed using the exhaust pipe 231 so that the pressure of the processing chamber 201 is a predetermined pressure (tens of Pa to near atmospheric pressure). In addition, the temperature is raised using the heater 207 so that the temperature of the processing chamber 201 is uniformly at a predetermined temperature or at a predetermined temperature distribution. At this time, cooling water flows through the flow paths 241 and 240 respectively to cool the upper inlet 2091, the fixing ring 229, and the lower inlet 2092. The controller 280 controls the inlet heater 207a based on the set temperature of the heater 207 and the temperature detection result from the temperature sensor 208, and maintains the temperature of the outer peripheral edge of the lower inlet 2092 and the sealing cover 219 at a predetermined value set in advance.

[0072] When the temperature and pressure of the processing chamber 201 are stabilized, the annealing gas is supplied to the processing chamber 24 of the inner tube 2032 through the gas supply unit 232a. The wafer boat 217 is rotated by the rotating mechanism 267 at least during the annealing process.

[0073] The supplied annealing gas rises in the processing chamber 201 of the inner tube 2032, flows out from the upper end opening to the exhaust path formed by the gap between the inner tube 2032 and the outer tube 2031, and is exhausted from the exhaust pipe 231. The surface of the wafer 200 is annealed in a state where the processing chamber 201 is filled with the annealing gas.

[0074] After a predetermined processing time for performing the annealing process has elapsed, the processing chamber 201 is evacuated to a predetermined vacuum level (several tens to several tens of thousands Pa).

[0075] The temperature of the processing chamber 201 is lowered by the heater assembly 207 so that the temperature is uniformly set to a predetermined temperature or a predetermined temperature distribution. At this time, cooling water flows through the flow paths 241 and 240 respectively to cool the upper inlet 2091, the fixing ring 229, and the lower inlet 2092. At this time, the controller 280 controls the inlet heater 207a based on the set temperature of the heater 207 and the temperature detection result from the temperature sensor 208 to maintain the temperature of the outer peripheral edge of the lower inlet 2092 and the sealing cover 219 at a predetermined value set in advance.

[0076] When the temperature and pressure of the processing chamber 201 are stabilized, the film forming gas is supplied to the processing chamber 201 of the inner tube 2032 through the gas supply parts 232b and 232a. The wafer boat 217 is rotated by the rotation mechanism 267 during the processing.

[0077] The supplied film-forming gas rises in the processing chamber 201 of the inner tube 2032, flows out from the upper end opening to the exhaust path formed by the gap between the inner tube 2032 and the outer tube 2031, and is discharged from the exhaust pipe 231. When passing through the processing chamber 201, the film-forming gas contacts the surface of the wafer 200. A film is deposited on the surface of the wafer 200 by a thermal reaction of the film-forming gas in contact with the wafer 200.

[0078] After a predetermined processing time for the film to be deposited with a desired film thickness has passed, an inert gas such as nitrogen is supplied from the gas supply unit 232c to the processing chamber 201 as a replacement gas, and the film forming gas and the reaction gas are exhausted from the processing chamber 201 and replaced with the inert gas. After the replacement is completely performed, when the processing chamber 201 is at atmospheric pressure, the sealing cover 219 is lowered to open the furnace opening 209, and the wafer group 200 is carried out from the furnace opening 209 to the standby room directly below the reaction tube 203 while being held by the wafer boat 217 (wafer boat extraction).

[0079] According to the present embodiment, one or more of the following effects can be obtained.

[0080] (1) The first protrusion 203A can be cooled by allowing the cooling medium to flow through the flow paths 240 and 241 provided in the upper inlet 2091 and the fixing ring 229. Thus, a structure can be provided in which the temperature of each component constituting the furnace opening (the upper inlet 2091 and the lower inlet 2092) is within a predetermined temperature range.

[0081] (2) The lower end of the reaction tube 203 (outer tube 2031) has a second protrusion 203B, and the second protrusion 203B is configured to cover at least a portion of the inner wall 2091b of the upper inlet 2091. In addition, the second protrusion 203B is configured to protrude toward the lower side of the reaction tube 203 (outer tube 2031) so as not to abut against the lower inlet 2092 and to cover the inner wall 2091b of the upper inlet 2092. Thus, it is possible to suppress the by-products from adhering to the inner wall 2091b of the upper inlet 2091. In particular, by reducing (or narrowing) the distance between the second protrusion 203B and the inner wall 2091b, it is possible to suppress an unnecessary temperature drop of the inner wall 2091b, thereby suppressing the by-products from adhering to the inner wall 2091b of the upper inlet 2091.

[0082] (3) The cooling medium flowing through the flow paths 240 and 241 is composed of a liquid such as water (water cooling). By using a liquid as the cooling medium, the temperature of the reaction tube 203 can be cooled more efficiently than air cooling (cooling with gas).

[0083] (4) A heating unit (heater 207a) is provided at the lower inlet 2092 to heat the outer wall 2092a of the lower inlet 2092. Since the outer wall 2092a can be heated, it is possible to suppress excessive cooling of the lower inlet 2092 due to the influence of the upper inlet 2091 cooled by the cooling medium (e.g., liquid).

[0084] (5) The reaction tube 203 (outer tube 2031) is configured such that the thickness (t1) of the portion where the exhaust pipe 231 is provided is greater than the thickness (t2) of the other portion (t1>t2). Thus, the exhaust pipe 231 can be provided in the reaction tube 203, so that the metal parts (C-shaped fixing ring 229) constituting the furnace mouth portion 209 can be reduced, thereby suppressing the risk of metal contamination.

[0085] (6) A cover 219 connected to the lower inlet 2092 via a third sealing member 220c is provided, and the space surrounded by the reaction tube 203, the upper inlet 2091, the lower inlet 2092, and the cover 219 is sealed so as to be depressurized by the first sealing member 220a, the second sealing member 220b, and the third sealing member 220c. The structure has a structure that can keep the temperature of each component (upper inlet 2091, lower inlet 2092) constituting the furnace port 209 within a predetermined temperature range, so that the adhesion of by-products generated in the processing space in a depressurized state can be suppressed.

[0086] (7) The cross-sectional shape of the upper inlet 2091 and the ring (fixing ring 229) is a U-shape (a horizontal U-shape). In addition, the flow path 240 of the upper inlet 2091 is arranged on the lower side of the first protrusion 203A, and the flow path 241 of the fixing ring 229 is arranged on the upper side of the first protrusion 203A. Thus, the flow paths 240 and 241 are arranged so as to sandwich the first protrusion 203A of the reaction tube 203 (outer tube 2031). Therefore, the cooling medium is arranged above and below the first protrusion 203A, so that the contact area with the reaction tube 203 can be increased, and the reaction tube 203 can be efficiently cooled.

[0087] (8) The reaction tube 203 includes an inner tube 2032 in which a processing chamber 201 for processing a substrate 200 is provided, and an outer tube 2031 provided outside the inner tube 2032 so as to surround the inner tube 2032. The upper inlet 2091 supports the outer tube 2031, and the lower inlet 2092 supports the inner tube 2032. The temperature of each component (upper inlet 2091, lower inlet 2092) constituting the furnace port 209 is within a predetermined temperature range, thereby being able to suppress the adhesion of by-products generated in the processing space having the double reaction tube structure.

[0088] (9) The inner wall of the lower inlet 2092 is coated. Since the inner walls (gas receiving parts) of the components (upper inlet 2091 and lower inlet 2092) constituting the furnace opening 209 are coated, adhesion of by-products can be suppressed.

[0089] (10) The reaction tube 203 includes an inner tube 2032 in which a processing chamber 201 for processing a substrate 200 is provided, and an outer tube 2031 provided outside the inner tube 2032 so as to surround the inner tube 2032. The upper inlet 2091 supports the outer tube 2031, and the lower inlet 2092 supports the inner tube 2032. The temperature of each component (upper inlet 2091, lower inlet 2092) constituting the furnace port 209 is within a predetermined temperature range, thereby being able to suppress the adhesion of by-products generated in the processing space having the double reaction tube structure.

[0090] (11) A heating unit (heater 208) is provided at the lower inlet 2092 to heat the outer wall 2092a of the lower inlet 2092. Since the outer wall 2092a can be heated, it is possible to suppress excessive cooling of the lower inlet 2092 due to the influence of the upper inlet 2091 cooled by the cooling medium (e.g., liquid).

[0091] (12) A temperature sensor (temperature switch) 208 is provided on the outer wall 2092a of the lower inlet 2092, and a preset temperature (e.g., the set temperature of the heating unit 207a: 180°C) can be detected. In addition, the substrate processing apparatus 100 further includes a control unit 280, which is configured to perform heating using the heating unit 207a according to a signal from the temperature sensor 208 when the temperature of the outer wall 2092a of the lower inlet 2092 becomes lower than the preset temperature (e.g., the set temperature of the heating unit 207a: 180°C). By detecting the temperature of the outer wall 2092a of the lower inlet 2092 (when the outer wall 2092a is heated), it is possible to detect excessive cooling of the lower inlet 2092, thereby suppressing excessive cooling of the lower inlet 2092 due to the influence of the upper inlet 2091 cooled by the cooling medium (e.g., liquid).

[0092] (13) A heating mechanism 207 is provided for heating the processing chamber 201 outside the outer tube 2031, and the setting temperature of the heating mechanism 207 can be adjusted to be above the first temperature (T1). In addition, a refrigerant supply unit (IN1, IN3: see Figure 4If the set temperature of the heating mechanism 207 is above the first temperature, a structure can be provided in which the components constituting the furnace opening 209 (upper inlet 2091, lower inlet 2092, etc.) are kept in a predetermined temperature range (here, 180°C to 350°C).

[0093] (14) A control unit 280 is provided, which controls in the following manner: if the set temperature of the heating mechanism 207 is higher than the first temperature (T1), the inlet heater 207a provided on the outer wall 2092a of the lower inlet portion 2092 is turned off, and if the set temperature of the heating mechanism 207 is lower than the first temperature (T1), the inlet heater 207a is turned on, and the temperature of each component (upper inlet portion 2091, lower inlet portion 2092, etc.) constituting the furnace opening portion 209 is controlled within a predetermined temperature range (here, 180°C to 350°C). When the set temperature of the heating mechanism 207 is higher than the first temperature (T1), a structure can be provided in which each component (upper inlet portion, lower inlet portion, etc.) constituting the furnace opening portion 209 is kept within a predetermined temperature range (here, 180°C to 350°C). In addition, the outer wall 2092 a can be heated by the inlet heater 207 a , so that excessive cooling of the inner walls of the upper inlet portion 2091 and the lower inlet portion 2092 by the cooling medium can be provided.

[0094] As mentioned above, although this disclosure was specifically described based on an Example, this disclosure is not limited to the said embodiment and an Example, Various changes are possible.

[0095] The present disclosure is not limited to semiconductor manufacturing equipment, but can also be used for equipment that processes glass substrates of LCD devices, etc. In addition, the film forming process includes, for example, CVD, PVD, a process of forming an oxide film, a nitride film, or both, a process of forming a film containing metal, etc. The present disclosure is not limited to the film forming process, but can also be used for processes such as annealing, oxidation, nitridation, and diffusion.

[0096] Features of preferred embodiments of the present disclosure are described below.

[0097] (Note 1)

[0098] According to one embodiment of the present disclosure, there is provided a furnace opening structure comprising:

[0099] An upper inlet portion connected to a first protrusion provided at a lower portion of the reaction tube via a first sealing member and supporting the reaction tube;

[0100] a lower inlet portion connected to the upper inlet portion via a second sealing member; and

[0101] a fixing ring connected to the upper inlet portion and fixing the first protrusion,

[0102] And constituted as:

[0103] The upper inlet is arranged below the exhaust pipe provided at the lower part of the reaction tube.

[0104] The first protrusion can be cooled by causing a cooling medium to flow through flow paths provided inside each of the upper inlet portion and the fixing ring.

[0105] (Note 2)

[0106] Preferably, in Note 1,

[0107] A second protrusion is provided at the lower end of the reaction tube and can cover at least a portion of the inner wall of the upper inlet portion.

[0108] (Note 3)

[0109] Preferably, in Note 2,

[0110] The second protrusion protrudes downward so as to cover the inner wall of the upper entrance portion without coming into contact with the lower entrance portion.

[0111] (Note 4)

[0112] Preferably, in Note 1, the cooling medium is liquid.

[0113] (Note 5)

[0114] Preferably, in Note 1,

[0115] The lower inlet portion is provided with a heating portion for heating the outer wall.

[0116] (Note 6)

[0117] Preferably, in Note 1,

[0118] The thickness of a portion of the reaction tube where the exhaust pipe is provided is greater than that of other portions.

[0119] (Note 7)

[0120] Furthermore, preferably, in Supplement 1,

[0121] A cover body is provided, and the cover body is connected to the lower inlet portion via a third sealing member.

[0122] The first sealing member, the second sealing member, and the third sealing member seal a space surrounded by the reaction tube, the upper inlet, the lower inlet, and the cover so as to be decompressible.

[0123] (Note 8)

[0124] Preferably, in Note 1,

[0125] The cross-sectional shape of the upper inlet portion and the fixing ring (the connecting portion) is a U-shape.

[0126] (Note 9)

[0127] Preferably, in Note 8,

[0128] The flow path of the upper inlet is arranged on the lower side of the first protrusion,

[0129] The flow path of the fixing ring is arranged on an upper side of the first protrusion.

[0130] (Note 10)

[0131] Preferably, in Note 1,

[0132] The reaction tube comprises: an inner tube in which a processing chamber for processing a substrate is arranged; and an outer tube arranged outside the inner tube in a manner of surrounding the inner tube.

[0133] The upper inlet portion supports the outer tube,

[0134] The lower inlet portion supports the inner tube.

[0135] (Note 11)

[0136] Preferably, in Note 1,

[0137] The inner wall of the lower inlet portion is subjected to coating treatment.

[0138] (Note 12)

[0139] According to another embodiment of the present disclosure,

[0140] Provided is a substrate processing apparatus including a furnace opening structure according to Supplementary Note 1.

[0141] (Note 13)

[0142] Preferably, in Note 12,

[0143] The reaction tube comprises: an inner tube in which a processing chamber for processing a substrate is arranged; and an outer tube arranged outside the inner tube in a manner of surrounding the inner tube.

[0144] The upper inlet portion supports the outer tube,

[0145] The lower inlet portion supports the inner tube.

[0146] (Note 14)

[0147] Preferably, in Note 12,

[0148] A heating portion for heating the outer wall of the lower inlet portion is provided on the outer wall of the lower inlet portion.

[0149] (Note 15)

[0150] Furthermore, preferably, in Supplement 14,

[0151] A temperature sensor (temperature switch) is provided on the outer wall of the lower entrance portion.

[0152] A preset temperature (for example, the set temperature of the heating unit) can be detected.

[0153] (Note 16)

[0154] Furthermore, preferably, in Supplement 15,

[0155] The device further includes a control unit configured to, when the temperature becomes lower than the preset temperature (for example, the set temperature of the heating unit), operate the heating unit according to the signal from the temperature sensor.

[0156] (Note 17)

[0157] Preferably, in Appendix 13,

[0158] A heating mechanism is provided, which heats the processing chamber outside the outer tube,

[0159] The set temperature of the heating mechanism can be adjusted to be equal to or higher than a first temperature.

[0160] (Note 18)

[0161] Furthermore, preferably, in Supplement 17,

[0162] A refrigerant supply portion is provided, and the refrigerant supply portion supplies a cooling medium to the upper inlet portion and the ring portion (fixing ring) independently.

[0163] (Note 19)

[0164] Furthermore, preferably, in Supplement 17,

[0165] A control unit is provided, which turns off the inlet heater provided on the outer wall of the lower inlet portion when the set temperature of the heating mechanism is equal to or higher than the first temperature.

[0166] If the set temperature of the heating mechanism is lower than the first temperature, the control unit turns on the inlet heater.

[0167] The control unit can control the temperature of each member constituting the furnace opening (upper inlet portion, lower inlet portion) within a predetermined temperature range.

[0168] (Note 20)

[0169] Furthermore, preferably, in Supplement 13, there is:

[0170] a heating mechanism for heating the processing chamber outside the outer tube;

[0171] a storage unit storing data indicating a correlation between a set temperature of the heating mechanism, that is, a processing temperature, and temperatures of a pre-specified portion of the upper inlet and a pre-specified portion of the lower inlet; and

[0172] A control unit controls the heater provided at the lower inlet portion according to a set temperature of the heating mechanism.

[0173] (Note 21)

[0174] According to another aspect of the present disclosure, there is provided a method for manufacturing a semiconductor device, comprising:

[0175] A step of preparing a substrate processing apparatus according to Appendix 12;

[0176] The step of carrying the substrate into a processing chamber formed at least inside the reaction tube and the furnace port structure; and

[0177] A step of processing the substrate.

Claims

1. A furnace mouth structure, characterized in that: have: An upper inlet portion connected to a first protrusion provided at a lower portion of the reaction tube via a first sealing member and supporting the reaction tube; a lower inlet portion connected to the upper inlet portion via a second sealing member; a fixing ring connected to the upper inlet portion and fixing the first protrusion; and a second protrusion provided at the lower end of the reaction tube and protruding downward so as not to abut against the lower inlet portion and to cover at least a portion of the inner wall of the upper inlet portion; And constituted as: The upper inlet is arranged below the exhaust pipe provided at the lower part of the reaction tube. The first projection can be cooled by causing a cooling medium to flow through flow paths provided inside each of the upper inlet portion and the fixing ring.

2. The furnace mouth structure according to claim 1, characterized in that: The cooling medium is liquid.

3. The furnace mouth structure according to claim 1, characterized in that: The lower inlet portion is provided with a heating portion for heating the outer wall.

4. The furnace mouth structure according to claim 1, characterized in that: A portion of the reaction tube where the exhaust pipe is provided has a thickness greater than that of other portions.

5. The furnace mouth structure according to claim 1, characterized in that: A cover body is provided, and the cover body is connected to the lower inlet portion via a third sealing member, The first sealing member, the second sealing member, and the third sealing member seal a space surrounded by the reaction tube, the upper inlet, the lower inlet, and the cover so as to be decompressible.

6. The furnace mouth structure according to claim 1, characterized in that: The flow path of the upper inlet is arranged on the lower side of the first protrusion, The flow path of the fixing ring is arranged on an upper side of the first protrusion.

7. The furnace mouth structure according to claim 1, characterized in that: The reaction tube comprises: an inner tube in which a processing chamber for processing a substrate is arranged; and an outer tube arranged outside the inner tube in a manner of surrounding the inner tube. The upper inlet portion supports the outer tube, The lower inlet portion supports the inner tube.

8. The furnace mouth structure according to claim 1, characterized in that: The inner wall of the lower inlet portion is subjected to coating treatment.

9. A substrate processing device, characterized in that: have: An upper inlet portion connected to a first protrusion provided at a lower portion of the reaction tube via a first sealing member and supporting the reaction tube; a lower inlet portion connected to the upper inlet portion via a second sealing member; a fixing ring connected to the upper inlet portion and fixing the first protrusion; and a second protrusion provided at the lower end of the reaction tube and protruding downward so as not to abut against the lower inlet portion and to cover at least a portion of the inner wall of the upper inlet portion; And constituted as: The upper inlet is arranged below the exhaust pipe provided at the lower part of the reaction tube. The first projection can be cooled by causing a cooling medium to flow through flow paths provided inside each of the upper inlet portion and the fixing ring.

10. The substrate processing apparatus according to claim 9, wherein: The reaction tube comprises: an inner tube in which a processing chamber for processing a substrate is arranged; and an outer tube arranged outside the inner tube in a manner of surrounding the inner tube. The upper inlet portion supports the outer tube, The lower inlet portion supports the inner tube.

11. The substrate processing apparatus according to claim 9, wherein: A heating portion for heating the outer wall of the lower inlet portion is provided on the outer wall of the lower inlet portion.

12. The substrate processing apparatus according to claim 11, characterized in that: A temperature sensor is provided on the outer wall of the lower inlet portion. Capable of detecting a preset temperature.

13. The substrate processing apparatus according to claim 12, wherein: The device further includes a control unit configured to execute the heating unit based on a signal from the temperature sensor when the temperature becomes lower than the preset temperature.

14. The substrate processing apparatus according to claim 10, wherein: A heating mechanism is provided, which heats the processing chamber outside the outer tube, The set temperature of the heating mechanism can be adjusted to be equal to or higher than a first temperature.

15. The substrate processing apparatus according to claim 14, wherein: A refrigerant supply unit is provided, and the refrigerant supply unit supplies a cooling medium to the upper inlet portion and the fixing ring independently.

16. The substrate processing apparatus according to claim 14, wherein: A control unit is provided, which can control the temperature of each member constituting the furnace opening portion within a predetermined temperature range by using a heater provided on the outer wall of the lower entrance portion according to the set temperature of the heating mechanism.

17. The substrate processing apparatus according to claim 10, wherein: have: a heating mechanism for heating the processing chamber outside the outer tube; a storage unit storing data indicating a correlation between a set temperature of the heating mechanism, that is, a processing temperature, and temperatures of a pre-specified portion of the upper inlet and a pre-specified portion of the lower inlet; and A control unit controls the heater provided at the lower inlet portion according to a set temperature of the heating mechanism.

18. A method for manufacturing a semiconductor device, characterized in that: The method comprises the step of processing a substrate disposed in a processing chamber formed inside a furnace opening structure. The furnace mouth structure comprises: Reaction tube; an upper inlet portion connected to a first protrusion provided at a lower portion of the reaction tube via a first sealing member and supporting the reaction tube; a lower inlet portion connected to the upper inlet portion via a second sealing member; a fixing ring connected to the upper inlet portion and fixing the first protrusion; and a second protrusion provided at the lower end of the reaction tube and protruding downward so as not to abut against the lower inlet portion and to cover at least a portion of the inner wall of the upper inlet portion; And constituted as: The upper inlet is disposed below an exhaust pipe provided at a lower portion of the reaction tube, and the first protrusion can be cooled by allowing a cooling medium to flow through flow paths provided inside the upper inlet and the fixing ring.

Images