piezoelectric position control flow ratio control

Abstract

A method includes receiving, for a first conduit, a first pressure value corresponding to a first valve position of a first valve coupled to the first conduit. The method further includes receiving, for a second conduit routed in parallel with the first conduit, a second pressure value corresponding to a second valve position of a second valve coupled to the second conduit. The method further includes generating a fluid conductance map based on the first valve position, the first pressure value, the second valve position, and the second pressure value. The method further includes causing, by a processing device, the first valve to be in the first valve position and the second valve to be in the second valve position based on a recipe and the fluid conductance map for a process of the recipe.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to flow ratio control, and more particularly to flow ratio control using piezoelectric position control. BACKGROUND

[0002] Products are produced by using manufacturing equipment to perform one or more manufacturing processes. For example, substrate processing equipment is used to produce substrates via substrate manufacturing processes in a substrate processing system. The substrate manufacturing processes include providing fluid flow to one or more chambers of the substrate processing system. SUMMARY

[0003] The following is a simplified summary of the disclosure to present some aspects of the disclosure in a simplified form, to provide a basic understanding of the disclosure. This summary is not an extensive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure, nor is it intended to delineate any scope of the specific embodiments of the disclosure or any scope of the claims. The sole purpose of this summary is to present some concepts of the disclosure in a simplified form, as a prelude to the more detailed description presented later.

[0004] In one aspect of the disclosure, a method includes receiving, for a first conduit, a first plurality of pressure values corresponding to a first plurality of valve positions of a first valve coupled to the first conduit. The method further includes receiving, for a second conduit routed in parallel with the first conduit, a second plurality of pressure values corresponding to a second plurality of valve positions of a second valve coupled to the second conduit. The method further includes generating a fluid conductance map based on the first plurality of valve positions, the first plurality of pressure values, the second plurality of valve positions, and the second plurality of pressure values. The method further includes causing, by a processing device, the first valve to be in a first valve position and the second valve to be in a second valve position based on a recipe and the fluid conductance map for a process of the recipe.

[0005] In another aspect of the disclosure, a system includes a plumbing including an inlet conduit, a first conduit, and a second conduit, wherein a first distal end of the inlet conduit is coupled to a fluid source, wherein a second distal end of the inlet conduit is coupled to the first conduit and the second conduit in parallel. The system further includes a first valve coupled to the first conduit and configured to control a first flow rate through the first conduit. The system further includes a second valve coupled to the second conduit and configured to control a second flow rate through the second conduit. The system further includes a processing device to cause the first valve to be in a first valve position and the second valve to be in a second valve position based on a recipe for a process of the recipe.

[0006] In another aspect of the disclosure, a flow ratio controller (FRC) valve includes a displacement device configured to control fluid flow through the FRC valve, a displacement sensor coupled to the displacement device, and a processing device. The processing device is configured to receive an input signal indicative of a first setpoint to preposition the displacement device for a process of a recipe. The processing device is further configured to initiate adjustment of a physical displacement of the displacement device based on the input signal. The processing device is further configured to determine whether the physical displacement of the displacement device matches the first setpoint based on feedback signals received from the displacement sensor during the adjustment. The processing device is further configured to stop the adjustment of the physical displacement of the displacement device in response to determining that the physical displacement of the displacement device matches the first setpoint. BRIEF DESCRIPTION OF DRAWINGS

[0007] The disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings.

[0008] Figure 1 A block diagram of a substrate processing system according to certain embodiments is illustrated.

[0009] Figures 2A-2D A cross-sectional view of a flow rate control valve for a substrate processing system according to certain embodiments.

[0010] Figures 3A-3B A flow diagram of a method related to use of a flow rate control valve in a substrate processing system according to certain embodiments.

[0011] Figure 4 A block diagram illustrating a computer system according to certain embodiments is illustrated. DETAILED DESCRIPTION

[0012] Described herein are techniques related to flow ratio control, e.g., using piezoelectric position control.

[0013] Products are produced by performing one or more manufacturing processes. For example, substrates (e.g., wafers, semiconductors, etc.) are produced by performing one or more substrate manufacturing processes. Substrate manufacturing processes include providing fluid flow to one or more chambers of a substrate processing chamber. In some examples, a common fluid source provides fluid to two or more locations, such as two or more chambers (e.g., processing chambers), two or more regions in a chamber (e.g., regions of a showerhead in a processing chamber), or the like. Some recipes include providing a first flow ratio of fluid to a first location and a second flow ratio of fluid to a second location simultaneously.

[0014] Systems use passive control or active control to divert fluid flow into two or more channels. In passive flow, the size of the tubing is configured to provide a specific amount of flow to each channel. For example, two tubes are sized to be equal to provide half of the fluid flow via a first tube and half of the fluid flow via a second tube. In some examples, two tubes are sized to have equal fluid conductance (e.g., volume flow rate divided by pressure drop). Passive control cannot adjust the ratio of fluid flow via different channels, and thus applications are limited.

[0015] In some conventional systems using active control, fixed orifices are used coupled with valves. Depending on the ratio allocation specified by a recipe for different channels, different valves are opened to direct fluid flow via different orifices to provide different flow rates. Conventional systems with many fixed orifices and corresponding valves are expensive, require more installation and maintenance time, and take up more space (e.g., voluminous). Active control using fixed orifices is limited to adjusting fluid flow ratio based on fixed orifice size, and thus applications are limited.

[0016] In some conventional systems using active control, sensors are embedded in a wet flow path of each parallel channel to determine the amount of fluid flow via the channel, and based on sensor data from the sensors, fluid flow is actively diverted to different parallel channels. Some conventional systems use temperature sensors in the wet flow path or use pressure sensors in the wet flow path (e.g., measure pressure on orifice, laminar flow element). In some examples, the fluid in the flow path is corrosive (e.g., corrosive gas, corrosive recipe), which deteriorates the sensors over time. In some examples, sensors (e.g., temperature sensors) at elevated temperatures (e.g., 90 degrees Celsius) deteriorate faster (e.g., elevated temperatures further enhance reactions). In some examples, sensor values from sensors in the wet flow path are biased (e.g., incorrect) due to one or more of drift over time, flow offset, corrosion, material deposition on the sensors, flow path fluid conductance mismatch, and / or the like. Over time, sensors in the wet flow path are to be corrected, recalibrated, and replaced.

[0017] Traditional active control using sensors in the wet flow path is reactive, such that the flow ratio is controlled only after fluid flow has occurred in the pipe where the sensor is located. Reactive traditional active control has a valve response time (e.g., the valve takes time to respond to the control signal) that causes flow rate hysteresis (e.g., the flow rate lags behind the control signal, e.g., the flow rate is controlled after the fluid flow has flowed through the valve). Reactive traditional active control has low repeatability (e.g., the valve takes a longer or shorter amount of time to reach the valve position). The hysteresis and low repeatability cause ratio errors (e.g., incorrect flow rate ratios) and substrate critical dimension (CD) shifts (e.g., substrate errors).

[0018] The apparatuses, systems, and methods disclosed herein provide flow ratio control (e.g., using piezoelectric position control).

[0019] The present disclosure includes generating a fluid conductance map for flow ratio control. A first pipe and a second pipe are routed in parallel (e.g., an input pipe is split into the first pipe and the second pipe). A processing device receives a first pressure value for the first pipe, the first pressure value corresponding to a first valve position of a first valve coupled to the first pipe. The processing device further receives a second pressure value for the second pipe, the second pressure value corresponding to a second valve position of a second valve coupled to the second pipe. The processing device generates a fluid conductance map based on the first valve position, the first pressure value, the second valve position, and the second pressure value. The processing device causes the first valve to be at the first valve position and the second valve to be at the second valve position based on a recipe and the fluid conductance map for a process of the recipe. In some examples, if for an upcoming recipe process the first valve would be at 60% flow rate and the second valve would be at 40% flow rate, the processing device can cause the first valve to be at 60% position and the second valve to be at 40% position in anticipation of the process (e.g., proactive rather than reactive, increasing throughput). In some examples, the processing device opens the first valve and the second valve to 100% to clean the first pipe and the second pipe in anticipation of the upcoming recipe process (e.g., to speed up the cleaning of the pipes for the upcoming process, increasing throughput).

[0020] The present disclosure includes a system for flow ratio control. The system includes an inlet pipe, a first pipe, and a second pipe, where a first distal end of the inlet pipe is coupled to a fluid source, where a second distal end of the inlet pipe is coupled to the parallel first pipe and second pipe. The system further includes a first valve coupled to the first pipe and configured to control a first flow rate through the first pipe. The system further includes a second valve coupled to the second pipe and configured to control a second flow rate through the second pipe. The system further includes a processing device (e.g., of a controller of a substrate processing system) to cause the first valve to be at a first valve position and the second valve to be at a second valve position based on a recipe for a process of the recipe.

[0021] The present disclosure includes a flow ratio controller (FRC) valve for flow ratio control. The FRC valve includes a displacement device (e.g., piezoelectric material, solenoid, etc.) that controls fluid flow through the FRC valve, a displacement sensor (e.g., strain gauge, capacitive sensor, eddy current sensor, etc.) coupled to the displacement device, and a processing device coupled to the displacement device and the displacement sensor. The displacement device, the displacement sensor, and the processing device are separated from a wet flow path of the FRC valve by a diaphragm (e.g., valve seat material). The processing device receives an input signal (e.g., voltage value) indicative of a first setpoint (e.g., first fluid flow rate) to preset the displacement device in anticipation of a recipe process. The processing device further initiates adjustment of the physical displacement of the displacement device (e.g., by moving the diaphragm via the displacement device to increase or decrease a size of an opening) based on the input signal. The processing device further determines whether the physical displacement of the displacement device matches the first setpoint based on feedback signals received from the displacement sensor during the adjustment. In response to determining that the physical displacement of the displacement device matches the first setpoint, the processing device further stops the adjustment of the physical displacement of the displacement device.

[0022] Aspects of the present disclosure yield technical advantages. The sensor of the FRC valve of the present disclosure is located outside of the wet flow path and does not have the biased (e.g., incorrect) sensor values of conventional systems that have sensors in the wet flow path. This reduces time (e.g., calibration, reinstallation, etc.), energy, components (e.g., new sensors), and defective substrates produced by conventional systems that have sensors in the wet flow path. The system of the present disclosure controls flow rates that travel through different pipes and can be used for more applications compared to passive control systems and fixed orifice systems. The system of the present disclosure places the valve in a displacement position (e.g., for fluid flow rate) for a process of a recipe (e.g., is preemptive, acts before the next process), which increases throughput compared to conventional systems.

[0023] While some embodiments of the present disclosure are described with respect to pressure values, in some embodiments, other types of values are also used in place of or in addition to pressure values, such as flow rate values (e.g., volumetric flow rate values, mass flow rate values, etc.), temperature values, and / or the like.

[0024] Figure 1 A block diagram of a substrate processing system 100 according to certain embodiments is shown.

[0025] The substrate processing system 100 includes one or more fluid sources 110, a plurality of sets of tubing 120, and a chamber 130.

[0026] In some implementations, the chamber 130 includes one or more of an enclosure system (e.g., a substrate carrier, a front opening unified pod (FOUP), an auto teach FOUP, a process kit enclosure system, a substrate enclosure system, etc.), a side storage pod (SSP), a factory interface (e.g., an equipment front end module (EFEM)), a load lock, a transfer chamber, one or more processing chambers, and / or the like. The enclosure system, the SSP, and load lock mechanisms to the factory interface and robot arms disposed in the factory interface are used to transfer contents (e.g., substrates, process kit rings, carriers, verification wafers, etc.) between the enclosure system, the SSP, the load lock, and the factory interface. The load lock and processing chamber mechanisms to the transfer chamber and robot arms disposed in the transfer chamber are used to transfer contents (e.g., substrates, process kit rings, carriers, verification wafers, etc.) between the load lock, the processing chamber, and the transfer chamber.

[0027] The tubing 120 provides (e.g., routes) fluid from the fluid source 110 to one or more chambers 130. In some implementations, the tubing 120 provides (e.g., routes) fluid to two or more chambers 130. In some examples, the tubing 120 provides (e.g., routes) fluid to a first processing chamber and a second processing chamber. In some examples, the tubing 120 provides (e.g., routes) fluid to a first EFEM and a second EFEM. In some implementations, the tubing 120 provides (e.g., routes) fluid to two or more locations within the same chamber 130. In some examples, the tubing 120 provides (e.g., routes) fluid to two or more zones of a showerhead in a processing chamber.

[0028] The tubing 120 includes an inlet conduit 122 and conduits 124A-124B. The conduits 124A-124B are parallel. The conduits 124A-124B are considered parallel when the conduits 124A-124B are fluidly connected such that the flow from the inlet conduit 122 branches or divides into two or more separate conduits 124A-124B. Although Figure 1 Although two conduits 124A-124B are shown in FIG. 1, the inlet conduit can branch into two or more conduits 124 (e.g., each conduit includes a corresponding valve 126).

[0029] In some embodiments, the substrate processing system 100 includes multiple fluid sources 110. In some embodiments, two or more fluid sources 110 use the same set of tubing 120. In some embodiments, each fluid source 110 uses its own set of tubing 120. In some embodiments, the fluid sources 110 (e.g., to an EFEM, to a FOUP, to a load lock, to an SSP, to generate a fluid conductance map, etc.) provide an inert gas, such as one or more of nitrogen, argon, neon, helium, krypton, or xenon. In some embodiments, the fluid sources 110 provide a corrosive gas. In some embodiments, the fluid sources 110 (e.g., to a processing chamber) provide one or more of atomic chlorine, diatomic chlorine, bromine trifluoride, chlorine trifluoride, nitrogen trifluoride, hydrogen chloride, a chlorinated sulfur such as sulfur dichloride, xenon dichloride, atomic fluorine, diatomic fluorine, bromine trifluoride, chlorine trifluoride, nitrogen trifluoride, hydrogen fluoride, a fluorinated sulfur such as sulfur hexafluoride, and xenon difluoride, and / or the like. In some embodiments, one or more fluid sources 110 provide a gas mixture (e.g., a mixture of an inert gas and an oxidation inhibiting gas, such as a mixture of nitrogen with hydrogen and / or ammonia, provided to an EFEM, a FOUP, a load lock, an SSP, etc.). In some embodiments, the type, ratio, and / or flow rate of fluid provided to one or more chambers 130 varies over time (e.g., based on a recipe-based process, based on a sensor within the chamber 130, etc.).

[0030] The substrate processing system 100 includes a controller 140. In some embodiments, the controller 140 includes one or more computing devices, such as a rackmount server, a router computer, a server computer, a personal computer, a mainframe computer, a laptop computer, a tablet computer, a desktop computer, a Graphics Processing Unit (GPU), an accelerator Application-Specific Integrated Circuit (ASIC) (e.g., a Tensor Processing Unit (TPU)), a Personal Computer (PC), a mobile telephone, a smartphone, a netbook computer, an operations box, etc. In some embodiments, the controller 140 displays a Graphical User Interface (GUI) to receive input and display output. In some embodiments, the controller 140 receives input (e.g., from a data store, a client device, a metrology device, a sensor, etc.), processes the input to generate output, and provides the output (e.g., a voltage value, a fluid conductance map, etc.) (e.g., to a data store, a client device, a component of the substrate processing system 100, a valve 126, etc.). In some embodiments, the controller 140 is used to perform the method 300A of FIG. 3. Figure 3A

[0031] ​The controller 140 is coupled to one or more of the fluidic manifold 112 (e.g., to control the flow rate and / or type of fluid into the inlet pipe 122 of the line 120), the valves 126A-126B (e.g., to control the flow rate of fluid in the pipes 124A-124B), the sensor 114 (e.g., to receive sensor data to determine the total flow rate into the inlet pipe 122 and / or out of the fluidic manifold 112), the sensors 128A-128B (e.g., to receive sensor data to generate a fluid conductance map), the chamber 130, and / or other portions of the substrate processing system 100 (e.g., a robot, an aligner device, a location center finding (LCF) device, other sensors, etc.). In some implementations, one or more of the sensor 114 and / or the sensors 128A-128B are pressure sensors that provide pressure values. In some implementations, one or more of the sensor 114 and / or the sensors 128A-128B are used to generate a fluid conductance map and are removed (e.g., not included in a corrosive fluid flow) after the fluid conductance map is generated. In some implementations, one or more of the sensor 114 and / or the sensors 128A-128B are located in different locations (e.g., before the valves 126A-126B, before the fluidic manifold 112, in the inlet pipe 122, in the chamber 130, etc.) and / or are combined into fewer sensors. In some examples, the sensors 128A-128B provide inlet pressure values (e.g., located before the valves 126A-126B). In some implementations, the sensor 128 is one sensor in the inlet pipe 122.

[0032] In some implementations, the controller 140 is coupled to one or more of the fluidic manifold 112, the valves 126A-126B, the sensor 114, the sensors 128A-128B, the chamber 130, and / or other portions of the substrate processing system 100 via a network (e.g., via a wired connection and / or a wireless connection). In some implementations, the network is a public network that provides the controller 140 with access to publicly available computing devices. In some implementations, the network is a private network that provides the controller 140 with access to privately available computing devices. In some implementations, the network includes one or more Wide Area Networks (WANs), Local Area Networks (LANs), wired networks (e.g., Ethernet networks), wireless networks (e.g., 802.11 networks or Wi-Fi networks), cellular networks (e.g., Long Term Evolution (LTE) networks), routers, hubs, switches, server computers, cloud computing networks, and / or combinations thereof.

[0033] In some implementations, the controller 140 controls the substrate processing system 100 to produce a substrate. In some implementations, the controller 140 causes a corrective action to be taken based on sensor data received from the substrate processing system 100 (e.g., from the sensors 114 and / or the sensors 128A-B). In some implementations, the corrective action includes one or more of providing an alert (e.g., an alert of sensor data drift, preventative maintenance, a part to be replaced, etc.), updating a manufacturing parameter (e.g., a flow rate, a physical displacement of a valve, an opening size of a valve, a type of fluid provided, a mixture of fluids provided, etc.), interrupting a function of the substrate processing system 100, and / or the like.

[0034] In some implementations, the controller 140 causes inert gas to be provided from the fluid source 110 to the chamber 130 via the conduit 120. The controller 140 transmits a voltage value to the valve 126A to cause the valve 126A to be at a corresponding valve position (e.g., a different physical displacement) during flow of the inert gas via the conduit 124A. The controller 140 transmits a voltage value to the valve 126B to cause the valve 126B to be at a corresponding valve position during flow of the inert gas via the conduit 124B. The controller 140 receives a sensor value corresponding to the valve position of the valve 126A (e.g., a pressure value corresponding to fluid flow via the conduit 124A) via the sensor 128A and a sensor value corresponding to the valve position of the valve 126B (e.g., a pressure value corresponding to fluid flow via the conduit 124B) via the sensor 128B. The controller 140 generates a fluid conductance map based on the valve positions and the sensor values corresponding to the valves 126A-B. The controller 140 causes the valve 126A to be at a first valve position and the valve 126B to be at a second valve position based on a recipe and the fluid conductance map for a process of the recipe.

[0035] In some implementations, the sensors 128A-B (e.g., pressure sensors) are removed from the conduits 124A-B after the fluid conductance map is generated. In some implementations, the controller 140 verifies and / or updates the fluid conductance map over time.

[0036] In some implementations, the controller 140 receives a recipe (e.g., for producing a substrate via the substrate processing system 100). The controller 140 transmits a first voltage value to the valve 126A and a second voltage value to the valve 126B to cause the valves 126A-126B to be in corresponding valve positions for a process of the recipe. In some implementations, the controller 140 transmits voltage values to the valves 126A-126B to open the valves 126A-126B to evacuate fluid from the line 120 in preparation for a process of the recipe (e.g., a process of a recipe that uses a different fluid). In some implementations, the controller 140 transmits voltage values to the valves 126A-126B to place the valves 126A-126B in corresponding valve positions that will be used in an upcoming recipe process.

[0037] Figures 2A-2D is a cross-sectional view of an FRC valve 200A-200D (e.g., the valves 126A-126B of Figure 1 the substrate processing system 100 of FIG. 1) for a substrate processing system (e.g., Figure 1 according to certain implementations.

[0038] In some implementations, the FRC valve 200 includes a displacement device 210 configured to control fluid flow via the FRC valve 200, a displacement sensor 220 coupled to the displacement device 210, and a processing device 230 (e.g., circuitry, processing circuitry, a processor, etc.) coupled to the displacement device 210 and the displacement sensor 220. In some implementations, a diaphragm 240 (e.g., a valve seat material) separates one or more of the displacement device 210, the displacement sensor 220, and / or the processing device 230 from a wet flow path (e.g., fluid does not contact the displacement device 210, the displacement sensor 220, and / or the processing device 230). In some implementations, the FRC valve 200 is coupled to a conduit 250 (e.g., the conduit 124A or the conduit 124B of Figure 1 FIG. 1).

[0039] In some implementations, the FRC valves 200A-200B are the same FRC valve in different valve positions. In some implementations, the FRC valves 200C-200D are the same FRC valve in different valve positions. In some implementations, Figure 2A the FRC valve 200A of FIG. 2A and Figure 2C the FRC valve 200C of FIG. 2C are in an open position and Figure 2B the FRC valve 200B of FIG. 2B and Figure 2D the FRC valve 200D of FIG. 2D are in a closed position.

[0040] The displacement device 210 reduces and increases the size of the opening (e.g., an opening for a wet fluid flow, an opening aligned with the conduit 250, etc.) via the FRC valve 200 from one or more directions. In some implementations, the displacement device 210 reduces and increases the size of the size of the opening (e.g., reduces and increases the entire circumference, see Figures 2A-2B ) via the FRC valve 200 from two or more directions. In some implementations, the displacement device 210 reduces and increases the size of the size of the opening (e.g., see Figures 2C-2D ) via the FRC valve 200 in one direction. In some implementations, the FRC valve 200 has a single displacement device 210 (e.g., a single displacement device 210 in Figures 2C-2D that reduces an inner diameter, a single displacement device 210 of Figures 2A-2B ). In some implementations, the FRC valve 200 has multiple displacement devices 210 (e.g., an upper displacement device 210 and a lower displacement device 210 of Figures 2A-2B that are moved closer to each other).

[0041] In some implementations, the processing device 230 receives an input signal (e.g., a voltage value from the controller 140 of Figure 1 ) indicative of a first setpoint (e.g., a physical displacement of the displacement device 210, a first flow rate value, a first flow ratio) to preset the displacement device 210 for a process of a recipe (e.g., in anticipation of a process of a recipe). The processing device 230 initiates an adjustment of the physical displacement of the displacement device 210 based on the input signal. The processing device 230 determines whether the physical displacement of the displacement device 210 matches the first setpoint based on feedback signals received from the displacement sensor 220 during the adjustment. In response to determining that the physical displacement of the displacement device 210 matches the first setpoint, the processing device 230 stops the physical displacement of the displacement device 210.

[0042] In some implementations, the displacement device 210 is a piezoelectric material or a solenoid. In response to receiving a voltage value, the displacement device 210 (e.g., the piezoelectric material or the solenoid) has a physical displacement. In some examples, a first voltage value causes a physical displacement that opens (e.g., full fluid flow via the FRC valve 200), and a second voltage value causes a physical displacement that closes (e.g., no fluid flow via the FRC valve 200).

[0043] In some implementations, the displacement sensor 220 is a strain gauge, a capacitive sensor (e.g., measures capacitance between two plates), or an eddy current sensor. In some implementations, the displacement sensor 220 determines a physical displacement of the displacement device 210. The displacement sensor 220 provides feedback of the actual displacement of the displacement device 210. In some implementations, the processing device 230 receives a voltage value, initiates application of the voltage value, and applies a different voltage value (e.g., a lower voltage value, a higher voltage value) than the voltage value received based on the feedback signal (e.g., physical displacement) from the displacement sensor 220. In some implementations, the displacement device 210 is controllable to a fine resolution (e.g., tens, hundreds, thousands, or tens of thousands of set points per full stroke of a valve (e.g., set points between open and closed)).

[0044] In some implementations, the processing device 230 determines a change over time. In some examples, the processing device 230 determines a change in an amount of time from a first valve position to a second valve position (e.g., open to closed, etc.). In some examples, the processing device 230 determines a change correlation between a voltage value and a physical displacement determined by the displacement sensor 220 (e.g., different amounts of voltage to be in an open or closed position over time). In some implementations, one or more operations described herein as being performed by the processing device 230 are performed by a controller (e.g., the controller 140 of the substrate processing system 100) of a substrate processing system (e.g., Figure 1 In some implementations, one or more operations described herein as being performed by a controller (e.g., the controller 140 of the substrate processing system 100) of a substrate processing system are performed by the processing device 230. In some implementations, the processing devices 230 of two or more valves 200 communicate with each other and / or one or more other components of a substrate processing system (e.g., Figure 1 In some implementations, one or more operations described herein as being performed by a controller (e.g., the controller 140 of the substrate processing system 100) of a substrate processing system are performed by the processing device 230. In some implementations, the processing devices 230 of two or more valves 200 communicate with each other and / or one or more other components of a substrate processing system (e.g., Figure 1 In some implementations, the processing devices 230 of two or more valves 200 communicate with each other and / or one or more other components of a substrate processing system (e.g.,

[0045] In some implementations, the fluid conductance curves are displayed on a flow conductance plot (e.g., a graph) including a first axis of pressure (torr) and a second axis of valve position (volts (V)). In some implementations, a first fluid conductance curve corresponds to a first conduit and a second fluid conductance curve corresponds to a second conduit routed in parallel to the first conduit (e.g., an inlet conduit is split into at least a first conduit and a second conduit). The first conduit and the second conduit each have different fluid conductances (e.g., volume flow rate divided by pressure drop). In some implementations, the different fluid conductance curves result from one or more of different lengths, different routings, different diameters, different friction, different fittings, different piping geometry, different head losses, different transitions, and / or the like of the first conduit and the second conduit.

[0046] In some implementations, the fluid conduction plot is generated for calibration (e.g., calibration voltage, which is provided to a valve providing a certain flow rate). The fluid conduction plot provides a non-linear relationship between a valve setpoint (e.g., a voltage value) and a pressure value (e.g., for each pipe in a parallel pipeline). In some implementations, the fluid conduction plot includes a fluid conduction curve (e.g., a graph).

[0047] In some implementations, the fluid conductance meter value is updated based on a response (e.g., a feedback signal, a measured pressure value, etc.). In some implementations, valve calibration ends in response to an inlet pressure exceeding a certain value (e.g., 500 Torr).

[0048] Figures 3A-3B This is according to certain embodiments and in a substrate processing system (e.g., Figure 1 The substrate processing system 100 uses a flow rate control valve (e.g., Figure 1 Valve 126 Figures 2A-2D The flowcharts for methods 300A-300B related to valves 200A-200D, etc., are provided. Methods 300A-300B are performed by processing logic, which includes hardware (e.g., circuitry, dedicated logic, programmable logic, microcode, processing devices, etc.), software (such as instructions running on a processing device, a general-purpose computer system, or a special-purpose machine), firmware, microcode, or a combination of the foregoing. In some embodiments, method 300A is partially performed by… Figure 1 The controller 140 performs this. In some embodiments, method 300C is partially performed by... Figure 1 Valve 126 and / or Figures 2A-2D The processing device 230 performs this operation. In some embodiments, a non-transitory storage medium stores instructions, which are performed by the processing device (e.g., Figure 1 Controller 140 Figure 1 Valve 126 Figures 2A-2D When the processing device 230 or the other processing device is executed, it causes the processing device to perform one or more of the methods 300A-300B.

[0049] For simplicity of explanation, methods 300A-300B are depicted and described as a series of operations. However, operations according to this disclosure may occur in various sequences and / or simultaneously with other operations not presented and described herein. Furthermore, in some embodiments, implementing methods 300A-300B according to the disclosed subject matter does not perform all the shown operations. Additionally, those skilled in the art will understand that methods 300A-300B may alternatively be represented as a series of interrelated states via state diagrams or events.

[0050] refer to Figure 3AAt block 310 of the method 300A, the processing logic causes fluid flow (e.g., fluid flow of an inert gas such as one or more of nitrogen, argon, neon, helium, krypton, or xenon) via a manifold, the manifold including an inlet conduit and a plurality of conduits substantially parallel, the plurality of conduits including a first conduit and a second conduit parallel to the first conduit (e.g., flow via the inlet conduit branches to at least the first conduit and the second conduit). In some implementations, the processing logic transmits a signal to a fluidic manifold to cause the fluidic manifold to provide fluid flow of one or more inert gases via the manifold. In some implementations, the processing logic causes different inlet flow rates of the inert gas (e.g., 500 seem, 1000 seem, etc.).

[0051] In some implementations, the manifold splits fluid flow routed via the inlet conduit into flow via at least the first conduit and the second conduit. A first valve is used to control flow via the first conduit, and a second valve is used to control flow via the second conduit. In some implementations, the first conduit and the second conduit have similar characteristics (e.g., similar fluid conductance, similar head, similar size, similar routing, etc.). In some implementations, the first conduit and the second conduit have different characteristics. The inlet conduit receives fluid flow from a fluid source (e.g., received via a fluidic manifold controlled by the processing logic). The first conduit and the second conduit provide fluid flow (e.g., from the fluid source via the inlet conduit to the first conduit and the second conduit) to one or more locations (e.g., one or more chambers, one or more regions, one or more portions of a showerhead disposed in a processing chamber). In some implementations, a flow splitting device includes one or more of the inlet conduit, the first conduit, the second conduit, the first valve, and / or the second valve.

[0052] At block 312, the processing logic transmits a first voltage value to a first valve coupled to the first conduit to cause the first valve to be in a first valve position during fluid flow. In some implementations, the processing logic transmits the first voltage value to the first valve during different inlet flow rates of the inert gas (e.g., 100% open, 50% open at 500 seem; 100% open, 50% open at 1000 seem, etc.).

[0053] At block 314, the processing logic receives a first pressure value for the first conduit, the first pressure value corresponding to the first valve position of the first valve. In some implementations, the first pressure value includes a set of corresponding pressure values for each inlet flow rate. In some examples, the first pressure value includes a first set of pressure values, the first set of pressure values including a first pressure value for a first valve position at a first inlet flow rate, a second pressure value for a second valve position at the first inlet flow rate, etc.

[0054] In some implementations, the first pressure value is determined when the first valve is in a different valve position and other parallel valves (e.g., the second valve) are in a closed position.

[0055] In some implementations, blocks 312-314 are repeated for each valve coupled to a corresponding conduit that runs parallel to the first conduit (e.g., for multiple conduits and a corresponding multiple valves). For example, blocks 316-318 are for a second conduit.

[0056] At block 316, the processing logic transmits a second voltage value to a second valve coupled to the second conduit to cause the second valve to be in a second valve position during fluid flow. Block 316 is similar to block 312, but for the second valve.

[0057] At block 318, the processing logic receives a second pressure value for the second conduit, the second pressure value corresponding to the second valve position of the second valve. Block 318 is similar to block 314, but for the second valve. In some implementations, the second pressure value is determined when the second valve is in a different valve position and other parallel valves (e.g., the first valve) are in a closed position.

[0058] In some implementations, the processing logic transmits a third voltage value to a third valve coupled to a third conduit to cause the third valve to be in a third valve position during fluid flow, and receives a third pressure value for the third conduit, the third pressure value corresponding to the third valve position of the third valve (e.g., in a different valve position and other valves in a closed position).

[0059] At block 320, the processing logic generates a fluid conductance map (e.g., a fluid conductance curve, a fluid conductance table, etc.) based on the valve positions and pressure values (e.g., at least the first valve position, the first pressure value, the second valve position, and the second pressure value). In some implementations, the processing logic generates the fluid conductance map further based on the third valve position and the third pressure value. In some implementations, the processing logic generates the fluid conductance map via one or more operations. The fluid conductance map indicates which voltages correspond to which flow rates via each conduit. In some implementations, two or more of the multiple conduits that are substantially parallel (e.g., the first conduit and the second conduit) have different characteristics (e.g., different fluid conductances) such that the first valve is set at a first voltage (e.g., 4.9 V) and the second valve is set at a second voltage (e.g., 5.2 V) to cause the two conduits to have the same flow rate. In some implementations, the fluid conductance map can be used to determine voltage values based on flow rates or pressures corresponding to a recipe process.

[0060] At block 322, the processing logic causes two or more valves to be in valve positions (e.g., a first valve in a first valve position and a second valve in a second valve position) based on the recipe and the fluid conduction map for a process of the recipe. In some embodiments, the processing logic further causes a third valve to be in a third valve position based on the recipe and the fluid conduction map for the process of the recipe. In some embodiments, the processing logic determines a parameter (e.g., a pressure value, a flow rate value, etc.) from an upcoming process in the recipe, determines a corresponding voltage value from the fluid conduction map based on the parameter, and causes the valve to be in the valve position by transmitting the corresponding voltage value to the valve.

[0061] In some embodiments, the processing logic causes the valves to be pre-positioned in valve positions to be used during an upcoming recipe process. In some embodiments, the processing logic causes the valves to be opened to purge fluid from the conduits in preparation for an upcoming recipe process (e.g., the upcoming recipe process will use a different fluid than a previously used fluid).

[0062] In some embodiments, the processing logic generates a model of fluid conduction ratios.

[0063] The model of fluid conduction ratios includes an inlet flow rate (e.g., sccm). The inlet flow rate is a flow rate (e.g., measured at a fluid manifold, measured at an inlet conduit, etc.) of an inert gas (e.g., nitrogen (N2)) into an inlet conduit that branches into parallel conduits. Different inlet flow rates are used to generate the model of fluid conduction ratios. In some embodiments, the different inlet flow rates are common flow rates used in one or more recipes. In some embodiments, a range of different inlet flow rates includes a range of flow rates used in one or more recipes. In some embodiments, the different flow rates are incrementally spaced apart (e.g., 500, 1000, 1500, 2000, etc. sccm).

[0064] The model of fluid conduction ratios includes ratio set points. In some embodiments, the ratio set points include different voltage values (e.g., 0-10V or 0-5V, where 0 is closed and the highest voltage is fully open). In some embodiments, the ratio set points include different percentages of open (e.g., 0% to 100% open). In some embodiments, the ratio set points include a ratio of a parameter (e.g., percentage of open, voltage, flow rate, pressure) of one valve relative to another valve. For example, a ratio set point of 1 is 1:1, a ratio set point of 2 is 2:1, etc.

[0065] The model of the fluid conductance ratio includes corresponding values (e.g., Vix, V2x) of the inlet flow rate and the ratio setpoint. In some embodiments, the corresponding values (e.g., Vix, V2x) are values of the pipe pressure for different inlet flow rates and different ratio setpoints. For example, for a first inlet flow rate (e.g., 500 seem) and a first ratio setpoint (e.g., the first valve and the second valve fully open), a first pressure value (e.g., Vixi) of the first pipe coupled to the first valve and a second pressure value (e.g., V2xi) of the second pipe coupled to the second valve are determined. In some embodiments, the corresponding values (e.g., Vix, V2x) are values of the voltage of the valves for different inlet flow rates and different ratio setpoints. For example, for a first inlet flow rate (e.g., 500 seem) and a first ratio setpoint (e.g., the first valve and the second valve fully open), a first voltage value (e.g., Vixi) of the first pipe coupled to the first valve and a second voltage value (e.g., V2xi) of the second pipe coupled to the second valve are determined.

[0066] In some embodiments, the pressure values of the model of the fluid conductance ratio are determined by the method 300A of blocks 310-318. Figure 3A

[0067] In some embodiments, the processing logic generates a fluid conductance map (e.g., a fluid conductance table, a fluid conductance curve, a graph, a learned fluid conductance map, etc.) based on the model of the fluid conductance ratio.

[0068] The fluid conductance map includes valve setpoints (e.g., volts (V), input / output first and second valve voltage setpoints) of different valves and corresponding pressure values (e.g., torr) at the valve setpoints of the different valves. In some embodiments, the pressure values and / or the voltage values are from the model of the fluid conductance ratio.

[0069] In some embodiments, the control loop includes determining different pressure values (e.g., Figure 3A of blocks 310-318) for input into the model of the fluid conductance ratio. The different pressure values from the model of the fluid conductance ratio are combined with corresponding voltage setpoints for the ratio setpoints of the model of the fluid conductance ratio for input into the fluid conductance map.

[0070] In some embodiments, valve setpoints (e.g., voltage values) are interpolated (e.g., estimated) from the fluid conductance map based on pressure values that are not on the fluid conductance map. In some embodiments, valve setpoints (e.g., voltage values) for a first inlet flow rate (e.g., a flow rate from a fluid manifold or an inlet pipe) are interpolated (e.g., estimated) from the fluid conductance map (e.g., a fluid conductance curve) corresponding to different inlet flow rates (e.g., a second inlet flow rate that is less than the first inlet flow rate and a third inlet flow rate that is greater than the first inlet flow rate). ​

[0071] In some implementations, blocks 310-320 are repeated to update the conductance ratio model, to update the fluid conductance map, to determine whether there is a drift (e.g., sensor value drift, ratio drift, conductance drift, valve displacement device drift, etc.), to determine a root cause of variability, to determine whether a corrective action is to be taken, to determine whether a response time of the valve is lagging, and / or the like. The corrective action includes one or more of providing an alert, updating a manufacturing parameter, performing preventative maintenance, replacing a component, shutting down a manufacturing device (e.g., a processing chamber), and / or the like. Figure 3A

[0072] Referring to FIG. 3B, at block 340 of method 300B, the processing logic receives an input signal indicative of a setpoint to pre-position the displacement device for a process of a recipe. In some implementations, the processing logic receives one or more input signals indicative of one or more setpoints to pre-position one or more displacement devices (e.g., of one FRC valve, of multiple FRC valves) for a process of a recipe. In some implementations, the input signal is a voltage value corresponding to a pressure value (or flow rate value) to be used in a process of a recipe. In some implementations, the input signal is received from a controller of a substrate processing system. In some implementations, the input signal (e.g., voltage value) corresponds to a pressure value on a fluid conductance map. Figure 3B At block 342, the processing logic initiates adjustment of the physical displacement of the displacement device (e.g., one or more displacement devices) based on the input signal. In some implementations, the adjustment of the physical displacement of the displacement device is performed by applying a voltage to the displacement device. In some implementations, the displacement device is a piezoelectric material that increases or decreases an opening through a valve by moving a diaphragm disposed between the piezoelectric material and a wet flow path in the valve. In some implementations, the displacement device is a solenoid that increases or decreases an opening through a valve by moving a diaphragm disposed between the solenoid and a wet flow path in the valve.

[0073] At block 344, the processing logic receives a feedback signal from a displacement sensor during the adjustment. The displacement sensor is electrically coupled to the displacement device. In some implementations, the displacement sensor is one or more of a strain gauge, a capacitive sensor, or an eddy current sensor. The displacement sensor determines the physical displacement of the displacement device as the physical displacement of the displacement device is adjusted by applying a voltage to the displacement device.

[0074]

[0075] ​​At block 346, the processing logic determines whether the physical displacement matches the setpoint based on the feedback signal. For example, if the setpoint indicates that the physical displacement is 1 micron, the processing logic determines whether the feedback signal indicates that the physical displacement is 1 micron. In response to a physical displacement that does not match the setpoint, the flow returns to block 344. In response to a physical displacement that matches the setpoint, the flow continues to block 348.

[0076] At block 348, the processing logic stops adjusting the displacement device. In some embodiments, the setpoint is a voltage value (e.g., 5V) that corresponds to a physical displacement (e.g., fully opening a valve). In some embodiments, using the feedback signal, an updated voltage value (e.g., 4.9V, 5.2V) is used to achieve the physical displacement. Although the method 300B is described for one displacement device, in some embodiments, the method 300B is applied to two or more displacement devices (e.g., a single FRC valve, two or more FRC valves, etc.).

[0077] Figure 4 is a block diagram that illustrates a computer system 400, in accordance with certain embodiments. In some embodiments, the computer system 400 is a controller 140 of Figure 1 In some embodiments, the computer system is a valve 126 of Figure 1 In some embodiments, the computer system is a valve 200 of Figures 2A-2D In some embodiments, the computer system 400 includes one or more of the components shown in Figure 4 In some embodiments, the computer system 400 does not include every component shown in Figure 4 In some embodiments, the computer system 400 does not include every component shown in

[0078] In some embodiments, the computer system 400 is connected (e.g., via a network, such as a local area network (LAN), an intranet, an extranet, or the Internet) to other computer systems. The computer system 400 operates in the capacity of a server or a user computer in a user-server environment, or in a peer-to-peer or distributed network environment, in some embodiments. In some embodiments, the computer system 400 is provided by a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any device capable of executing a set of instructions (sequential or other) that specify actions to be taken by that device. Further, the term "computer" shall also include any collection of computers or computer components whether functioning as a single computer or as a plurality of computers.

[0079] In some implementations, computer system 400 includes a processing device 402, volatile memory 404 (e.g., random access memory (RAM)), non-volatile memory 406 (e.g., read-only memory (ROM) or Electrically-Erasable Programmable ROM (EEPROM)), and / or data storage device(s) 416, which communicate with one another via a bus 408.

[0080] In some implementations, processing device 402 is provided by one or more processors, such as a general-purpose processor (e.g., a Complex Instruction Set Computing (CISC) microprocessor, a Reduced Instruction Set Computing (RISC) microprocessor, a Very Long Instruction Word (VLIW) microprocessor, a microprocessor implementing other types of instruction sets, or a microprocessor implementing a combination of instruction set types) or a special- purpose processor (e.g., an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), a Digital Signal Processor (DSP), or a network processor).

[0081] In some implementations, computer system 400 further includes a network interface device 422 (e.g., a coupling to the network 474). In some implementations, computer system 400 also includes a video display unit 410 (e.g., an LCD), an alphanumeric input device 412 (e.g., a keyboard), a cursor control device 414 (e.g., a mouse), and / or a signal generation device 420.

[0082] In some implementations, data storage device(s) 416 include a non-transitory computer-readable storage medium 424 on which is stored instructions 426 encoding any one or more of the methods or functions described herein, including instructions for implementing the methods described herein.

[0083] In some embodiments, instructions 426 also reside, completely or partially, within volatile memory 404 and / or processing device 402 during execution thereof by computer system 400, thus, volatile memory 404 and processing device 402 also constitute machine-readable storage media in some embodiments.

[0084] While computer-readable storage media 424 is shown in an illustrative example as a single medium, the term "computer-readable storage media" should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store the one or more sets of executable instructions. The term "computer-readable storage media" shall also include any tangible media that is capable of storing or encoding a set of instructions for execution by a computer, that cause the computer to perform any one or more of the methods described herein. The term "computer-readable storage media" shall include, but not be limited to, solid-state memories, optical media, and magnetic media.

[0085] In some embodiments, the methods, components, and features described herein are implemented in discrete hardware components or integrated in the functionality of other hardware components such as ASICS, FPGAs, DSPs or similar devices. In some embodiments, the methods, components and features are implemented in a firmware module or functional circuitry within hardware devices. Furthermore, the methods, components and features are implemented in any combination of hardware devices and computer program components, or in computer program components alone.

[0086] Unless specifically stated otherwise, terms such as "receiving," "generating," "causing," "determining," "transmitting," "starting," "stopping," or the like, refer to actions and processes performed or implemented by a computer system that manipulates and transforms data represented as physical (electronic) quantities within the computer system's registers and memories into other data similarly represented as physical quantities within the computer system memories or registers or other such information storage, transmission or display devices. Also, the terms "first," "second," "third," "fourth," etc. as used herein are meant as labels to distinguish among different elements and not meant to imply order or sequence.

[0087] Examples described herein also relate to an apparatus for performing the methods described herein. In some embodiments, this apparatus is specially constructed for performing the methods described herein, or it comprises a general-purpose computer system selectively programmed by a computer program stored in the computer system. Such a computer program is stored in a tangible computer-readable storage medium.

[0088] The methods and illustrative examples described herein are not inherently related to any particular computer or other apparatus. Various general purpose systems can be used with programs in accordance with the teachings herein, or it can prove convenient to construct more specialized apparatus to perform the methods and / or each of the individual functions, routines, subroutines, or operations in the methods described herein. Examples of structures for such specialized apparatus are set forth in the descriptions above.

[0089] Reference throughout this specification to "one implementation", "an implementation", or "a number of implementations" means that a particular feature, structure, or characteristic described in connection with the implementation is included in at least one implementation. Thus, appearances of the phrases "in one implementation", "in an implementation", or "in a number of implementations" in various places throughout this specification are not necessarily all referring to the same implementation. Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". In some implementations, the terms "about" or "approximately" as used herein are intended to mean within ±10% of the nominal value presented.

[0090] As used herein, the terms "over", "under", "between", "on", and "on top of" refer to the relative positioning of one material layer or component with respect to other layers or components. In some examples, a layer that is disposed on, over, or under another layer is in direct contact with the other layer or has one or more intervening layers. In some examples, a layer that is disposed between two layers is in direct contact with both layers or has one or more intervening layers. Similarly, in some examples, a feature that is disposed between two features is in direct contact with the adjacent features or has one or more intervening layers.

[0091] Various implementations can have different combinations of the structure features described above. For example, all of the optional features of the housing described above can also be implemented in the housing, and details from the examples can be used anywhere in one or more implementations.

[0092] The above description is intended to be illustrative, and not restrictive. While the present disclosure has been described with reference to specific illustrative examples and implementations, it will be recognized that the disclosure is not limited to the examples and implementations described. The scope of the disclosure should be determined, not with reference to the above description, but should instead be determined with reference to the appended claims, along with their full scope of equivalents.

Claims

1. A method for flow ratio control, the method comprising the steps of: for a first conduit, receiving a first plurality of pressure values corresponding to a first plurality of valve positions of a first valve coupled to the first conduit; for a second conduit routed in parallel with the first conduit, receiving a second plurality of pressure values corresponding to a second plurality of valve positions of a second valve coupled to the second conduit; based on the first plurality of pressure values, the first plurality of valve positions, the second plurality of pressure values, and the second plurality of valve positions, generating a model of a fluid conductance ratio; based on the model of the fluid conductance ratio, generating a fluid conductance map; and causing, by a processing device, the first valve to be at a first valve position and the second valve to be at a second valve position based on a recipe and the fluid conductance map for a process of the recipe.

2. The method of claim 1, further comprising the steps of: for a third conduit routed in parallel with the first conduit and the second conduit, receiving a third plurality of pressure values corresponding to a third plurality of valve positions of a third valve coupled to the third conduit, wherein the generating of the fluid conductance map is further based on the third plurality of valve positions and the third plurality of pressure values; and causing the third valve to be at a third valve position based on the recipe and the fluid conductance map for the process of the recipe.

3. The method of claim 1, further comprising the steps of: based on the first plurality of pressure values, determining a corresponding first set of pressure values for different inlet flow rates of an inert gas; based on the second plurality of pressure values, determining a corresponding second set of pressure values for the different inlet flow rates; and based on the first plurality of valve positions and the second plurality of valve positions, determining a plurality of ratio set points, wherein the generating of the model of the fluid conductance ratio is further based on the different inlet flow rates, the plurality of ratio set points, the corresponding first set of pressure values, and the corresponding second set of pressure values.

4. The method of claim 3, further comprising the steps of: transmitting a first plurality of voltage values to the first valve to cause the first valve to be at the first plurality of valve positions during the different inlet flow rates via the first conduit; and transmitting a second plurality of voltage values to the second valve to cause the second valve to be at the second plurality of valve positions during the different inlet flow rates via the second conduit.

5. The method of claim 1, wherein the generating of the model of the fluid conductance ratio is further based on a plurality of ratio set points, and wherein the plurality of ratio set points are based on the first plurality of valve positions and the second plurality of valve positions.

6. The method of claim 1, wherein the step of causing the first valve to be at a first valve position and the second valve to be at a second valve position comprises the steps of: determining a first pressure value and a second pressure value from the recipe; determining a first voltage value corresponding to the first pressure value and a second voltage value corresponding to the second pressure value based on the fluid conductance map; transmitting the first voltage value to the first valve to cause the first valve to be in the first valve position; and transmitting the second voltage value to the second valve to cause the second valve to be in the second valve position.

7. The method of claim 1, wherein the steps of causing the first valve to be in the first valve position and the second valve to be in the second valve position purge fluid in the first conduit and the second conduit in anticipation of the process of the recipe.

8. The method of claim 1, wherein the steps of causing the first valve to be in the first valve position and the second valve to be in the second valve position prime the first valve and the second valve for the process of the recipe.

9. The method of claim 1, wherein: a first displacement sensor of the first valve is located outside of a first wet flow path of the first conduit; and a second displacement sensor of the second valve is located outside of a second wet flow path of the second conduit.

10. A system for flow ratio control, the system comprising: a manifold comprising an inlet conduit, a first conduit, and a second conduit, wherein a first distal end of the inlet conduit is coupled to a fluid source, wherein a second distal end of the inlet conduit is coupled to the first conduit and the second conduit in parallel; a first valve coupled to the first conduit and configured to control a first flow rate through the first conduit; a second valve coupled to the second conduit and configured to control a second flow rate through the second conduit; and a processing device for: generating a model of fluid conductance ratio based on: a first plurality of pressure values corresponding to a first plurality of valve positions of the first valve coupled to the first conduit; and a second plurality of pressure values corresponding to a second plurality of valve positions of the second valve coupled to the second conduit; generating a fluid conductance map based on the model of fluid conductance ratio; and causing the first valve to be in a first valve position and the second valve to be in a second valve position based on a recipe and the fluid conductance map for a process of the recipe.

11. The system of claim 10, wherein: the manifold further comprises a third conduit, wherein the second distal end of the inlet conduit is coupled to the third conduit, the third conduit being in parallel with the first conduit and the second conduit; the system further comprises a third valve coupled to the third conduit and configured to control a third flow rate through the third conduit; and the processing device causes the third valve to be in a third valve position based on the recipe for the process of the recipe.

12. The system of claim 10, further comprising a fluidic manifold configured to control fluid flow rates from the fluid source, wherein the processing device causes the fluidic manifold to provide corresponding fluid flow rates.

13. The system of claim 11, wherein the first conduit is fluidically coupled to a first chamber of a substrate processing system, the second conduit is fluidically coupled to a second chamber of the substrate processing system, and the third conduit is fluidically coupled to a third chamber of the substrate processing system.

14. The system of claim 10, wherein the first conduit is fluidly coupled to a first region in a first chamber and the second conduit is fluidly coupled to a second region in the first chamber.

15. The system of claim 10, wherein the processing device is further to: determine, based on the first plurality of pressure values, a corresponding first set of pressure values for different inlet flow rates of an inert gas; determine, based on the second plurality of pressure values, a corresponding second set of pressure values for the different inlet flow rates; and determine a plurality of ratio set points based on the first plurality of valve positions and the second plurality of valve positions, wherein the generation of the model of the fluid conductance ratio is further based on the different inlet flow rates, the plurality of ratio set points, the corresponding first set of pressure values, and the corresponding second set of pressure values.

16. The system of claim 10, wherein the processing device causes the first valve to be at the first valve position and the second valve to be at the second valve position to one or more of: purge fluid in the first conduit and the second conduit for the process of the recipe; or prime the first valve and the second valve for the process of the recipe.

17. A flow ratio controller (FRC) valve, comprising: a displacement device configured to control fluid flow through the FRC valve; and a displacement sensor coupled to the displacement device; a processing device to: receive an input signal indicative of a first set point to prime the displacement device for a process of a recipe, wherein the input signal is based on a fluid conductance map, wherein the fluid conductance map is based on a model of a fluid conductance ratio, and wherein the model of the fluid conductance ratio is based on: a first plurality of pressure values corresponding to a first plurality of valve positions of a first valve coupled to a first conduit; and a second plurality of pressure values corresponding to a second plurality of valve positions of a second valve coupled to a second conduit; initiate an adjustment of a physical displacement of the displacement device based on the input signal; determine, based on feedback signals received from the displacement sensor during the adjustment, whether the physical displacement of the displacement device matches the first set point; and stop the adjustment of the physical displacement of the displacement device in response to determining that the physical displacement of the displacement device matches the first set point.

18. The FRC valve of claim 17, wherein the displacement device, the displacement sensor, and the processing device are located outside of a wet flow path of the FRC valve.

19. The FRC valve of claim 17, wherein a diaphragm separates the displacement device, the displacement sensor, and the processing device from a wet flow path of the FRC valve.

20. The FRC valve of claim 17, wherein the displacement device is a piezoelectric material or a solenoid.

21. The FRC valve of claim 17, wherein the displacement sensor is a strain gauge, a capacitive sensor, or an eddy current sensor. ​ 22. The FRC valve of claim 17, wherein the input signal is a first voltage to cause the physical displacement of the displacement device, and wherein a second input signal is a second voltage to cause a second physical displacement of the displacement device.

23. The FRC valve of claim 17, wherein a third input signal is a third voltage to cause a third physical displacement of a second displacement device configured to control fluid flow through the FRC valve.

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