Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium

Abstract

The present invention relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium. The present invention aims to control the in-plane film thickness distribution of a film formed on a substrate. The semiconductor device manufacturing method of the present invention includes a step of preparing a substrate; and a step of supplying a non-reactive gas to the substrate from a first supply portion, supplying a non-reactive gas to the substrate from a second supply portion, and supplying a processing gas to the substrate from a third supply portion, the third supply portion being disposed on the opposite side of the first supply portion across a straight line passing through the center of the second supply portion and the substrate, and in the step of forming a film, the in-plane film thickness distribution of the film formed on the substrate is adjusted by controlling the balance between the flow rate of the non-reactive gas supplied from the first supply portion and the flow rate of the non-reactive gas supplied from the second supply portion.

Description

[0001] This application is a divisional application of Chinese Patent Application No. 201811351652.4, filed on November 13, 2018, entitled "Manufacturing Method of Semiconductor Device, Substrate Processing Apparatus, and Recording Medium". TECHNICAL FIELD

[0002] The present application relates to a substrate processing method, a manufacturing method of a semiconductor device, a substrate processing apparatus, and a recording medium. BACKGROUND

[0003] As one of manufacturing processes of a semiconductor device, a process of forming a film on a substrate is sometimes performed (see, for example, Patent Literature 1).

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2010-118462 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] An object of the present application is to provide a technology capable of controlling a film thickness distribution in a substrate surface of a film formed on a substrate.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] According to one embodiment of the present application, there is provided a technology including:

[0011] a process of preparing a substrate; and

[0012] a process of forming a film on the substrate by supplying a non-reactive gas to the substrate from a first supply part, supplying a non-reactive gas to the substrate from a second supply part, and supplying a first processing gas to the substrate from a third supply part, wherein the third supply part is disposed on a side opposite to the first supply part with respect to a straight line passing through a center of the second supply part and the substrate,

[0013] In the process of forming the film, a film thickness distribution in a substrate surface of the film formed on the substrate is adjusted by controlling a balance between a flow rate of the non-reactive gas supplied from the first supply part and a flow rate of the non-reactive gas supplied from the second supply part.

[0014] The present application relates to the following items.

[0015] Item 1. A manufacturing method of a semiconductor device, including:

[0016] a process of preparing a substrate; and

[0017] a process of supplying a non-reactive gas to the substrate from a first supply part, supplying a non-reactive gas to the substrate from a second supply part, and supplying a processing gas to the substrate from a third supply part, wherein the third supply part is disposed on a side opposite to the first supply part with respect to a straight line passing through the center of the second supply part and the substrate,

[0018] In the process of forming the film, a balance between the flow rate of the non-reactive gas supplied from the first supply part and the flow rate of the non-reactive gas supplied from the second supply part is controlled, thereby adjusting the in-plane film thickness distribution of the film formed on the substrate.

[0019] Item 2. The method of manufacturing a semiconductor device according to item 1, wherein the flow rate of the non-reactive gas supplied from the first supply part is made different from the flow rate of the non-reactive gas supplied from the second supply part.

[0020] Item 3. The method of manufacturing a semiconductor device according to item 1, wherein the flow rate of the non-reactive gas supplied from the first supply part is made larger than the flow rate of the non-reactive gas supplied from the second supply part.

[0021] Item 4. The method of manufacturing a semiconductor device according to item 1, wherein the flow rate of the non-reactive gas supplied from the first supply part is made smaller than the flow rate of the non-reactive gas supplied from the second supply part.

[0022] Item 5. The method of manufacturing a semiconductor device according to item 1, wherein the process of forming the film is preceded by a process of:

[0023] supplying a second processing gas to the substrate from the first supply part, supplying a non-reactive gas to the substrate from the second supply part, and supplying a non-reactive gas to the substrate from the third supply part, thereby forming a seed layer on the substrate,

[0024] In the process of forming the seed layer, a balance between the flow rate of the non-reactive gas supplied from the second supply part and the flow rate of the non-reactive gas supplied from the third supply part is controlled, thereby adjusting the in-plane thickness distribution of the seed layer formed on the substrate.

[0025] Item 6. The method of manufacturing a semiconductor device according to item 5, wherein the flow rate of the non-reactive gas supplied from the second supply part is made different from the flow rate of the non-reactive gas supplied from the third supply part.

[0026] Item 7. The method for manufacturing a semiconductor device according to item 5, wherein the flow rate of the non-reactive gas supplied from the second supply portion is made smaller than the flow rate of the non-reactive gas supplied from the third supply portion.

[0027] Item 8. The method for manufacturing a semiconductor device according to item 5, wherein the flow rate of the non-reactive gas supplied from the second supply portion is made larger than the flow rate of the non-reactive gas supplied from the third supply portion.

[0028] Item 9. The method for manufacturing a semiconductor device according to item 5, wherein, in the process of forming a seed layer, a cycle of alternately performing the following processes is performed a prescribed number of times:

[0029] a process of supplying a third processing gas to the substrate from any one of the first supply portion, the second supply portion, and the third supply portion; and

[0030] a process of supplying the second processing gas to the substrate from the first supply portion, supplying a non-reactive gas to the substrate from the second supply portion, and supplying a non-reactive gas to the substrate from the third supply portion.

[0031] Item 10. The method for manufacturing a semiconductor device according to item 9, wherein, in the process of supplying a third processing gas, a non-reactive gas is supplied to the substrate from the first supply portion, the third processing gas is supplied to the substrate from the second supply portion, and a non-reactive gas is supplied to the substrate from the third supply portion.

[0032] Item 11. The method for manufacturing a semiconductor device according to item 1, wherein, after the process of preparing a substrate and before the process of forming a film, the following process is further included:

[0033] a process of supplying a non-reactive gas to the substrate from the first supply portion, supplying a non-reactive gas to the substrate from the second supply portion, and supplying a second processing gas to the substrate from the third supply portion, thereby forming a seed layer on the substrate,

[0034] in the process of forming a seed layer, the substrate surface thickness distribution of the seed layer formed on the substrate is adjusted by controlling the balance of the flow rate of the non-reactive gas supplied from the first supply portion and the flow rate of the non-reactive gas supplied from the second supply portion.

[0035] Item 12. The method for manufacturing a semiconductor device according to item 11, wherein the flow rate of the non-reactive gas supplied from the first supply portion is made different from the flow rate of the non-reactive gas supplied from the second supply portion.

[0036] Item 13. The method for manufacturing a semiconductor device according to Item 11, wherein the flow rate of the inactive gas supplied from the first supply part is made larger than the flow rate of the inactive gas supplied from the second supply part.

[0037] Item 14. The method for manufacturing a semiconductor device according to Item 11, wherein the flow rate of the inactive gas supplied from the first supply part is made smaller than the flow rate of the inactive gas supplied from the second supply part.

[0038] Item 15. The method for manufacturing a semiconductor device according to Item 11, wherein, in the process of forming a seed layer, a cycle of alternately performing the following processes is performed a prescribed number of times:

[0039] a process of supplying a third processing gas to the substrate from any one of the first supply part, the second supply part, and the third supply part; and

[0040] a process of supplying an inactive gas to the substrate from the first supply part, supplying an inactive gas to the substrate from the second supply part, and supplying the second processing gas to the substrate from the third supply part.

[0041] Item 16. The method for manufacturing a semiconductor device according to Item 15, wherein, in the process of supplying a third processing gas, an inactive gas is supplied to the substrate from the first supply part, the third processing gas is supplied to the substrate from the second supply part, and an inactive gas is supplied to the substrate from the third supply part.

[0042] Item 17. The method for manufacturing a semiconductor device according to Item 1, wherein, in plan view, the second supply part is arranged so as to face an exhaust port through which the respective gases are exhausted, with the substrate interposed therebetween, and the first supply part and the third supply part are arranged so as to pass through a straight line passing through the second supply part and the exhaust port.

[0043] Item 18. The method for manufacturing a semiconductor device according to Item 17, wherein the first supply part and the third supply part are arranged in line symmetry with a straight line passing through the second supply part and the exhaust port as an axis of symmetry.

[0044] Item 19. The method for manufacturing a semiconductor device according to Item 1, wherein the process of forming a film is performed under a condition of non-self-limitation.

[0045] Item 20. A substrate processing apparatus comprising:

[0046] a processing chamber that processes a substrate;

[0047] a first supply system that supplies an inactive gas to a substrate in the processing chamber from a first supply part;

[0048] a second supply system that supplies an inactive gas to the substrate in the processing chamber from a second supply portion;

[0049] a third supply system that supplies a processing gas to the substrate in the processing chamber from a third supply portion, wherein the third supply portion is provided on a side opposite to the first supply portion with a straight line passing through the center of the second supply portion and the substrate interposed therebetween; and

[0050] a control portion configured to control the first supply system, the second supply system, and the third supply system to perform a process of forming a film on the substrate by supplying the inactive gas to the substrate from the first supply portion, supplying the inactive gas to the substrate from the second supply portion, and supplying the processing gas to the substrate from the third supply portion, in a state where the substrate is prepared in the processing chamber, wherein in the process of forming the film on the substrate, a film thickness distribution in a substrate surface of the film formed on the substrate is adjusted by controlling a balance between a flow rate of the inactive gas supplied from the first supply portion and a flow rate of the inactive gas supplied from the second supply portion.

[0051] Item 21, a computer-readable recording medium that records a program for causing a substrate processing apparatus to execute the following steps by a computer:

[0052] a step of preparing a substrate in a processing chamber of a substrate processing apparatus;

[0053] a step of forming a film on the substrate by supplying the inactive gas to the substrate from the first supply portion, supplying the inactive gas to the substrate from the second supply portion, and supplying the processing gas to the substrate from a third supply portion, wherein the third supply portion is provided on a side opposite to the first supply portion with a straight line passing through the center of the second supply portion and the substrate interposed therebetween; and

[0054] a step of adjusting a film thickness distribution in a substrate surface of the film formed on the substrate by controlling a balance between a flow rate of the inactive gas supplied from the first supply portion and a flow rate of the inactive gas supplied from the second supply portion, in the step of forming the film.

[0055] Effects of the Invention

[0056] According to the present invention, it is possible to control a film thickness distribution in a substrate surface of a film formed on a substrate. BRIEF DESCRIPTION OF DRAWINGS

[0057] Figure 1: This is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus suitable for use in embodiments of the present invention, and is a diagram showing the processing furnace portion in longitudinal cross-section.

[0058] Figure 2 This is a schematic diagram of a portion of a vertical processing furnace of a substrate processing apparatus suitable for use in embodiments of the present invention, and is based on... Figure 1 The AA-line cross-section view shows a portion of the processing furnace.

[0059] Figure 3 : This is a schematic configuration diagram of the controller of a substrate processing apparatus suitable for use in embodiments of the present invention, and a block diagram showing the control system of the controller.

[0060] Figure 4 : A diagram illustrating the film-forming sequence of one embodiment of the present invention.

[0061] Figure 5 (a) and (b) are cross-sectional views showing a modified example of the vertical processing furnace, with the reaction tube, buffer chamber and nozzles removed.

[0062] Figure 6 Figures (a) and (b) show the film thickness measurements at the outer periphery of the substrate on which the film was formed. Detailed Implementation

[0063] <An embodiment of the present invention>

[0064] The following is for reference Figures 1-4 An embodiment of the present invention will now be described.

[0065] (1) Composition of substrate processing device

[0066] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism (temperature control unit). The heater 207 is cylindrical and is vertically mounted by being supported by a retaining plate. The heater 207 also functions as an activation mechanism (activation unit) that activates (excites) the gas by heat.

[0067] A reaction tube 203 is provided concentrically inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with an upper end closed and a lower end open. A manifold 209 is provided concentrically below the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), and is formed in a cylindrical shape with upper and lower ends open. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and supports the reaction tube 203. An O-ring 220a is provided as a sealing member between the manifold 209 and the reaction tube 203. The reaction tube 203 is vertically installed like the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. The processing of the wafer 200 is performed in the processing chamber 201.

[0068] In the processing chamber 201, nozzles 249a to 249c as first to third supply portions are provided so as to penetrate the side wall of the manifold 209. Gas supply pipes 232a to 232c are connected to the nozzles 249a to 249c, respectively. The nozzles 249a to 249c are different nozzles, and the nozzles 249a and 249c are provided adjacent to the nozzle 249b.

[0069] On the gas supply pipes 232a to 232c, mass flow controllers (MFCs) 241a to 241c as flow controllers (flow control portions) and valves 243a to 243c as on-off valves are provided in this order from the upstream side of the gas flow, respectively. Gas supply pipes 232d and 232e are connected to the gas supply pipes 232a and 232b, respectively, on the downstream side of the valves 243a and 243b. Gas supply pipes 232f and 232g are connected to the gas supply pipe 232c on the downstream side of the valve 243c. MFCs 241d to 241g and valves 243d to 243g are provided in this order from the upstream side of the gas flow on the gas supply pipes 232d to 232g, respectively.

[0070] As Figure 2As shown, the nozzles 249a to 249c are respectively provided in a space in a circular ring shape in plan view between the inner wall of the reaction tube 203 and the wafer 200, and stand upright from the lower portion of the inner wall of the reaction tube 203 along the upper portion toward the upper side of the arrangement direction of the wafer 200. That is, in the region on the side of the wafer arrangement region in which the wafer 200 is arranged, which horizontally surrounds the wafer arrangement region, the nozzles 249a to 249c are respectively provided in a manner along the wafer arrangement region. In plan view, the nozzle 249b is arranged in a manner opposite to the exhaust port 231a described later in a straight line across the center of the wafer 200 carried into the processing chamber 201. The nozzles 249a, 249c are arranged in a manner along the inner wall of the reaction tube 203 (the outer peripheral portion of the wafer 200) from both sides across the straight line L (which passes through the centers of the nozzle 249b and the exhaust port 231a). The straight line L is also a straight line passing through the centers of the nozzle 249b and the wafer 200. That is, it can also be said that the nozzle 249c is provided on the side opposite to the nozzle 249a across the straight line L. The nozzles 249a, 249c are arranged in a line-symmetric manner with the straight line L as the axis of symmetry. On the side surfaces of the nozzles 249a to 249c, gas supply holes 250a to 250c are respectively provided. The gas supply holes 250a to 250c are each opened in a manner opposite (facing) the exhaust port 231a in plan view, and can supply gas toward the wafer 200. The gas supply holes 250a to 250c are provided in a plurality of numbers in the range from the lower portion to the upper portion of the reaction tube 203.

[0071] A silane-based gas containing silicon (Si) as a main element constituting a seed layer described later, for example, is supplied as a processing gas (2nd processing gas) into the processing chamber 201 from the gas supply pipe 232a via the MFC 241a, the valve 243a, and the nozzle 249a. As the silane-based gas, a halogen-free silicon hydride gas can be used, and, for example, a disilane (Si2H6, abbreviated as: DS) gas can be used.

[0072] A gas containing Si and a halogen element, that is, a halosilane-based gas, for example, is supplied as a processing gas (3rd processing gas) into the processing chamber 201 from the gas supply pipe 232b via the MFC 241b, the valve 243b, and the nozzle 249b. Among the halogen elements, chlorine (Cl), fluorine (F), bromine (Br), iodine (I), and the like are included. As the halosilane-based gas, for example, a chlorosilane-based gas containing Si and Cl can be used, and, for example, a dichlorosilane (SiH2Cl2, abbreviated as: DCS) gas can be used.

[0073] A silane-based gas, for example, Si (which serves as a main element constituting a film formed on the wafer 200) is supplied as a process gas (1st process gas) into the processing chamber 201 from the gas supply pipe 232c via the MFC 241c, the valve 243c, and the nozzle 249c. As the silane-based gas, a halogen element-free silicon hydride gas can be used, for example, a monosilane (SiH4, abbreviated as: MS) gas can be used.

[0074] A nitrogen (N2) gas is supplied as an inactive gas into the processing chamber 201 from the gas supply pipes 232d to 232f via the MFCs 241d to 241f, the valves 243d to 243f, the gas supply pipes 232a to 232c, and the nozzles 249a to 249c, respectively. The N2 gas functions as a purge gas, a carrier gas, a dilution gas, and the like, and in addition, functions as a film thickness distribution control gas for controlling the wafer surface film thickness distribution of a film formed on the wafer 200.

[0075] A gas containing an impurity (dopant) is supplied as a dopant gas into the processing chamber 201 from the gas supply pipe 232g via the MFC 241g, the valve 243g, the gas supply pipe 232c, and the nozzle 249c. As the dopant gas, a gas containing any of a group III element (group 13 element) and a group V element (group 15 element) and which alone becomes a solid element can be used, for example, a phosphine (PH3, abbreviated as: PH) gas as a gas containing a group V element can be used.

[0076] A process gas supply system is mainly constituted by the gas supply pipes 232a to 232c, the MFCs 241a to 241c, and the valves 243a to 243c. It is also conceivable to include the gas supply pipe 232g, the MFC 241g, and the valve 243g in the process gas supply system. In addition, an inactive gas supply system is mainly constituted by the gas supply pipes 232d to 232f, the MFCs 241d to 241f, and the valves 243d to 243f. Note that, in this specification, the gas supply system including the gas supply pipe 232d, the MFC 241d, and the valve 243d is referred to as a 1st supply system. It is also conceivable to include the gas supply pipe 232a, the MFC 241a, and the valve 243a in the 1st supply system. In addition, the gas supply system including the gas supply pipe 232e, the MFC 241e, and the valve 243e is also referred to as a 2nd supply system. It is also conceivable to include the gas supply pipe 232b, the MFC 241b, and the valve 243b in the 2nd supply system. In addition, the gas supply system including the gas supply pipe 232c, the MFC 241c, and the valve 243c is also referred to as a 3rd supply system. It is also conceivable to include the gas supply pipe 232g, 232f, the MFC 241g, 241f, and the valve 243g, 243f in the 3rd supply system.

[0077] Any or all of the aforementioned gas supply systems can be configured as an integrated supply system 248 comprising valves 243a-243g, MFCs 241a-241g, etc. The integrated supply system 248 is configured such that it is connected to gas supply pipes 232a-232g respectively, and the supply of various gases to the gas supply pipes 232a-232g is controlled by the controller 121 described later; that is, the opening and closing of valves 243a-243g, and the flow regulation using MFCs 241a-241g, etc. The integrated supply system 248 is configured as an integral or separate integrated unit, and is configured such that it can be disassembled and reassembled relative to the gas supply pipes 232a-232g, etc., as an integrated unit, and that the integrated supply system 248 can be maintained, replaced, or added as an integrated unit.

[0078] An exhaust port 231a is connected to the lower side wall of the reaction tube 203 to exhaust the atmosphere inside the processing chamber 201. For example... Figure 2 As shown, the exhaust port 231a is positioned opposite (facing) the nozzles 249a-249c (gas supply holes 250a-250c) across the wafer 200 when viewed from above. The exhaust port 231a can also be positioned from the lower part of the sidewall of the reaction tube 203 along the upper part, i.e., along the wafer arrangement area. An exhaust pipe 231 is connected to the exhaust port 231a. A vacuum pump 246, serving as a vacuum exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245 (which detects the pressure inside the processing chamber 201) and an APC (Auto Pressure Controller) valve 244 (which acts as a pressure regulator). The APC valve 244 is configured such that by opening and closing the valve while the vacuum pump 246 is operating, vacuum exhaust can be performed and stopped within the processing chamber 201. Furthermore, by adjusting the valve opening based on pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating, the pressure within the processing chamber 201 can be regulated. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 can be considered as being included in the exhaust system.

[0079] Below the manifold 209, a seal cover 219 as a furnace port cover body capable of airtightly closing the lower end opening of the manifold 209 is provided. The seal cover 219 is composed of a metal material such as SUS and is formed in a disc shape. An O-ring 220b as a seal member is provided on the upper surface of the seal cover 219 so as to abut against the lower end of the manifold 209. Below the seal cover 219, a rotation mechanism 267 that rotates the boat 217 described later is provided. A rotation shaft 255 of the rotation mechanism 267 penetrates the seal cover 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cover 219 is configured to be raised and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism provided outside the manifold 209. The boat elevator 115 is configured as a conveyance device (conveyance mechanism) capable of conveying the wafer 200 in and out of the processing chamber 201 by raising and lowering the seal cover 219. Below the manifold 209, a shutter 219s as a furnace port cover body capable of airtightly closing the lower end opening of the manifold 209 in a state where the seal cover 219 is lowered and the boat 217 is conveyed out of the processing chamber 201 is provided. The shutter 219s is composed of a metal material such as SUS and is formed in a disc shape. On the upper surface of the shutter 219s, an O-ring 220c as a seal member is provided so as to abut against the lower end of the manifold 209. The opening and closing operation (raising and lowering operation, rotating operation, etc.) of the shutter 219s is controlled by a shutter opening and closing mechanism 115s.

[0080] The boat 217 as a substrate support is configured to support a plurality of (for example, 25 to 200) wafers 200 in a horizontal posture and in a state where the wafers 200 are aligned with each other in the vertical direction and in multiple layers, that is, in a state where the wafers 200 are arranged with intervals. The boat 217 is composed of a heat-resistant material such as quartz or SiC. In the lower portion of the boat 217, a heat insulating plate 218 composed of a heat-resistant material such as quartz or SiC is supported in multiple layers.

[0081] In the reaction tube 203, a temperature sensor 263 as a temperature detector is provided. The temperature in the processing chamber 201 is made to have a desired temperature distribution by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0082] As Figure 3As shown, the controller 121 as a control unit (control means) is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be capable of exchanging data with the CPU 121a via an internal bus 121e. On the controller 121, an input / output device 122 configured in the form of a touch panel or the like is connected.

[0083] The storage device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program that controls the operation of the substrate processing apparatus, a process recipe in which steps, conditions, and the like of the substrate processing described later are described, and the like are stored in a readable manner. The process recipe is combined in a manner such that the controller 121 is capable of executing each step in the substrate processing described later and obtaining a prescribed result, and functions as a program. Hereinafter, the process recipe, the control program, and the like are also collectively and simply referred to as a program. In addition, the process recipe is also simply referred to as a recipe. In the present specification, in the case where the term program is used, the recipe alone is sometimes indicated, the control program alone is sometimes indicated, or both of them are sometimes included. The RAM 121b is configured as a memory area (work area) that temporarily holds a program, data, and the like read by the CPU 121a.

[0084] The I / O port 121d is connected to the above-described MFCs 241a to 241g, the valves 243a to 243g, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the heater 207, the rotation mechanism 267, the boat elevator 115, the gate opening / closing mechanism 115s, and the like.

[0085] The CPU 121a is configured to read and execute the control program from the storage device 121c, and to read the recipe from the storage device 121c in accordance with the input of an operation command from the input / output device 122 or the like. The CPU 121a is configured to control, in a manner in accordance with the content of the recipe read, the flow rate adjustment operation of each gas using the MFCs 241a to 241g, the opening / closing operation of the valves 243a to 243g, the opening / closing operation of the APC valve 244, the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the boat 217 using the rotation mechanism 267, the raising and lowering operation of the boat 217 using the boat elevator 115, the opening / closing operation of the gate 219s using the gate opening / closing mechanism 115s, and the like.

[0086] The controller 121 can be configured by installing the program stored in the external storage device 123 into a computer. The external storage device 123 includes, for example, a hard disk such as an HDD; an optical disk such as a CD; an optical disk such as an MO; and a semiconductor memory such as a USB memory. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they will be collectively referred to simply as recording media. When the term "recording medium" is used in this specification, it may refer only to the storage device 121c, only to the external storage device 123, or both. It should be noted that the program can be provided to the computer without using the external storage device 123, but rather using communication means such as a network or dedicated line.

[0087] (2) Substrate processing process

[0088] For an example of a substrate processing sequence, i.e., a film formation sequence example, in which a film is formed on a substrate using the aforementioned substrate processing apparatus as a step in the manufacturing process of a semiconductor device, the following applies: Figure 4 The following description will explain the operation of each component of the substrate processing apparatus, which is controlled by controller 121.

[0089] exist Figure 4 In the film formation sequence shown, after preparing the wafer 200 as a substrate, the following steps are performed: N2 gas, as an inactive gas, is supplied to the wafer 200 from nozzle 249a, which serves as a first supply section; N2 gas, as an inactive gas, is supplied to the wafer 200 from nozzle 249b, which serves as a second supply section; and MS gas, as a first processing gas, and PH gas, as a dopant gas, are supplied to the wafer 200 from nozzle 249c, which serves as a third supply section. This forms a P-doped Si film on the wafer 200 (the Si film formation step). The nozzle 249c of the third supply section is located on the side opposite to nozzle 249a, separated from the center of the wafer 200 by a straight line L passing through nozzle 249b and the center of the wafer 200 when viewed from above. In this specification, the P-doped Si film is also simply referred to as a Si film.

[0090] In addition, Figure 4 In the film formation sequence shown, after preparing the wafer 200 and before performing the Si film formation step described above, the following steps are performed: DS gas, which serves as the second processing gas, is supplied to the wafer 200 from nozzle 249a; N2 gas is supplied to the wafer 200 from nozzle 249b; and N2 gas is supplied to the wafer 200 from nozzle 249c, forming a Si layer on the wafer 200 as a seed layer (seed layer formation step). Hereinafter, this Si layer will also be referred to as the Si seed layer.

[0091] Specifically, in the seed layer forming step, a cycle of alternately performing Step 1 and Step 2 is performed a prescribed number of times, wherein in the Step 1, the DCS gas is supplied as the third processing gas to the wafer 200 from any one of the nozzles 249a to 249c (here, the nozzle 249b); and in the Step 2, the DS gas is supplied to the wafer 200 from the nozzle 249a, the N2 gas is supplied to the wafer 200 from the nozzle 249b, and the N2 gas is supplied to the wafer 200 from the nozzle 249c.

[0092] Note that, in the above Si film forming step, the in-plane film thickness distribution (hereinafter, also simply referred to as the in-plane film thickness distribution) of the Si film formed on the wafer 200 is adjusted by controlling the balance between the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249b.

[0093] Here, as an example, the following example is described: as the wafer 200, a bare wafer having a small surface area and no concave-convex structure formed on the surface is used, and the in-plane film thickness distribution of the Si film is adjusted using the above film forming sequence and flow rate control. In this specification, the in-plane film thickness distribution of a film that is thickest at the central portion of the wafer 200 and gradually thins as it approaches the outer peripheral portion (the circumferential portion) is referred to as a central convex distribution. In addition, the in-plane film thickness distribution of a film that is thinnest at the central portion of the wafer 200 and gradually thickens as it approaches the outer peripheral portion is referred to as a central concave distribution. In addition, the film thickness distribution of a film that is flat in that the film thickness changes little from the central portion to the outer peripheral portion of the wafer 200 is referred to as a flat distribution. If a film having a central convex distribution can be formed on a bare wafer, a film having a flat distribution can be formed on a pattern wafer (a product wafer) having a large surface area and a fine concave-convex structure formed on the surface.

[0094] In this specification, for convenience, the film forming sequence shown in FIG. 8 is expressed in the following manner. The same expression is used in the following modification examples and the like. Figure 4

[0095]

[0096] ​In the present specification, in the case where the term "wafer" is used, sometimes the "wafer itself" or the "wafer and a layer, film, etc. formed on the surface thereof" is meant. In the present specification, in the case where the term "surface of the wafer" is used, sometimes the "surface of the wafer itself" is meant, and sometimes the "surface of a layer, film, etc. formed on the wafer" is meant. In the present specification, in the case where it is described that "a layer (or film) is formed on the wafer", sometimes the "layer is formed directly on the surface of the wafer itself" is meant, and sometimes the "layer is formed on a layer, etc. formed on the wafer" is meant. In the present specification, the case where the term "substrate" is used has the same meaning as the case where the term "wafer" is used.

[0097] (Wafer filling and boat loading)

[0098] After the plurality of wafers 200 are filled (wafer filling) on the boat 217, the gate 219s is moved by the gate opening / closing mechanism 115s, so that the lower end opening of the manifold 209 is opened (gate opening). Thereafter, as shown in FIG. 2B, the boat 217 on which the plurality of wafers 200 are supported is lifted by the boat elevator 115 and carried into (boat loading) the processing chamber 201. In this state, the seal cap 219 is in a state of sealing the lower end of the manifold 209 by means of the O-ring 220b. Figure 1

[0099] (Pressure adjustment and temperature adjustment)

[0100] In order to bring the inside of the processing chamber 201, i.e., the space in which the wafers 200 exist, to a desired pressure (degree of vacuum), vacuum evacuation (depressurization evacuation) is performed by the vacuum pump 246. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and feedback control is performed on the APC valve 244 on the basis of the measured pressure information. In addition, heating is performed by the heater 207 in such a manner that the wafers 200 in the processing chamber 201 reach a desired film formation temperature. At this time, feedback control is performed on the energization of the heater 207 on the basis of the temperature information detected by the temperature sensor 263 in such a manner that the inside of the processing chamber 201 becomes a desired temperature distribution. In addition, rotation of the wafers 200 is started by the rotation mechanism 267. The evacuation of the inside of the processing chamber 201, the heating and rotation of the wafers 200 are all continued at least until the processing on the wafers 200 ends.

[0101] (Seed layer formation step)

[0102] Then, the following steps 1 and 2 are sequentially performed.

[0103] [Step 1]

[0104] ​In this step, the wafer 200 in the processing chamber 201 is supplied with the DCS gas from the nozzle 249b, and the N2 gas is supplied from each of the nozzles 249a, 249c.

[0105] Specifically, the valve 243b is opened, and the DCS gas is caused to flow into the gas supply pipe 232b. The DCS gas is flow-regulated by the MFC 241b, supplied into the processing chamber 201 via the nozzle 249b, and exhausted from the exhaust port 231a. At this time, the wafer 200 is supplied with the DCS gas. Also at this time, the valves 243d, 243f are opened, and the N2 gas is supplied into the processing chamber 201 via each of the nozzles 249a, 249c.

[0106] By supplying the wafer 200 with the DCS gas under the processing conditions described later, the natural oxide film, impurities, and the like are removed from the surface of the wafer 200 by the treatment action (etching action) of the DCS gas, and the surface is cleaned. Thus, the surface of the wafer 200 becomes a surface on which the adsorption of Si, i.e., the formation of a seed layer, is likely to proceed in Step 2 described later.

[0107] After the surface of the wafer 200 is cleaned, the valve 243b is closed, and the supply of the DCS gas into the processing chamber 201 is stopped. Then, the processing chamber 201 is vacuum-exhausted, and the gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201. At this time, the valves 243d to 243f are opened, and the N2 gas is supplied into the processing chamber 201 via the nozzles 249a to 249c. The N2 gas supplied from the nozzles 249a to 249c functions as a purge gas, and thus the processing chamber 201 is purged (purge step).

[0108] [Step 2]

[0109] After Step 1, the wafer 200 in the processing chamber 201, i.e., the surface of the cleaned wafer 200 is supplied with the DS gas from the nozzle 249a, and the N2 gas is supplied from each of the nozzles 249b, 249c.

[0110] Specifically, the valve 243a is opened, and the DS gas is caused to flow into the gas supply pipe 232a. The DS gas is flow-regulated by the MFC 241a, supplied into the processing chamber 201 via the nozzle 249a, and exhausted from the exhaust port 231a. At this time, the wafer 200 is supplied with the DS gas. Also at this time, the valves 243e, 243f are opened, and the N2 gas is supplied into the processing chamber 201 via each of the nozzles 249b, 249c.

[0111] By supplying the DS gas to the wafer 200 under the processing conditions described later, Si contained in the DS is adsorbed on the surface of the wafer 200 cleaned in Step 1, and a seed (nucleus) is formed. The crystal structure of the nucleus formed on the surface of the wafer 200 under the processing conditions described later is amorphous (non-crystalline).

[0112] After the nucleus is formed on the surface of the wafer 200, the valve 243a is closed, and the supply of the DS gas into the processing chamber 201 is stopped. Then, the same processing step as the purge step of Step 1 is used to remove the gas and the like remaining in the processing chamber 201 from the processing chamber 201.

[0113] [Implementation of a predetermined number of times]

[0114] By implementing the cycle of Steps 1 and 2 alternately, that is, non-simultaneously, a predetermined number of times (n times, n is an integer of 1 or more), a seed layer, that is, a Si seed layer, in which the above-described nucleus is formed at a high density, can be formed on the wafer 200.

[0115] As the processing conditions in Step 1, for example, the following can be exemplified:

[0116] DCS gas supply flow rate: 10 to 1000 seem

[0117] DCS gas supply time: 0.5 to 10 minutes

[0118] N2 gas supply flow rate (per gas supply pipe): 10 to 10000 seem

[0119] Processing temperature (first temperature): 350 to 450°C

[0120] Processing pressure: 400 to 1000 Pa.

[0121] As the processing conditions in Step 2, for example, the following can be exemplified:

[0122] DS gas supply flow rate: 10 to 1000 seem

[0123] DS gas supply time: 0.5 to 10 minutes.

[0124] The other processing conditions are set to the same processing conditions as those in Step 1.

[0125] In Step 1, as the third processing gas, in addition to the DCS gas, a monochlorosilane (SiH3Cl, abbreviated as: MCS) gas, a tetrachlorosilane (SiCl4, abbreviated as: STC) gas, a trichlorosilane (SiHCl3, abbreviated as: TCS) gas, a hexachlorodisilane (Si2Cl6, abbreviated as: HCDS) gas, an octachlorotrisilane (Si3Cl8, abbreviated as: OCTS) gas, or the like can be used. In addition, as the third processing gas, a tetrafluorosilane (SiF4) gas, a tetrabromosilane (SiBr4) gas, a tetraiodosilane (SiI4) gas, or the like can be used. That is, as the third processing gas, in addition to the chlorosilane gas, a fluorosilane gas, a bromosilane gas, an iodosilane gas, or the like can be used. In addition, as the third processing gas, a hydrogen chloride (HCl) gas, a chlorine (Cl2) gas, a boron trichloride (BCI3) gas, a chlorine fluoride (ClF3) gas, or the like can be used.

[0126] In Step 2, as the second processing gas, in addition to the DS gas, an MS gas, a propylsilane (Si3H8) gas, a butylsilane (Si4H 10 ) gas, a pentylsilane (Si5H 12 ) gas, a hexylsilane (Si6H 14 ) gas, or the like can be used.

[0127] As the non-active gas, in addition to the N2 gas, an Ar gas, a He gas, a Ne gas, an Xe gas, or the like can be used. This is also the same in the following temperature increasing step, the Si film forming step, and the like.

[0128] (Temperature increasing step)

[0129] After the seed layer forming step is completed, the output of the heater 207 is adjusted so that the temperature in the processing chamber 201 is changed to a second temperature which is higher than the above-mentioned first temperature. When this step is performed, the valves 243d to 243f are opened, and the N2 gas is supplied into the processing chamber 201 via the nozzles 249a to 249c, and the processing chamber 201 is purged. When the temperature in the processing chamber 201 reaches the second temperature and is stabilized, the following-mentioned Si film forming step is started.

[0130] (Si film forming step)

[0131] In this step, the MS gas and the PH gas are supplied from the nozzle 249c, and the N2 gas is supplied from each of the nozzles 249a and 249b to the wafer 200 in the processing chamber 201, that is, to the surface of the seed layer formed on the wafer 200.

[0132] Specifically, the valve 243c is opened, and the MS gas flows into the gas supply pipe 232c. The MS gas is supplied into the processing chamber 201 via the nozzle 249c after being flow-regulated by the MFC 241c, and is exhausted from the exhaust port 231a. At this time, the valve 243g is opened, and the PH gas flows into the gas supply pipe 232g. The PH gas is supplied into the processing chamber 201 via the gas supply pipe 232c and the nozzle 249c after being flow-regulated by the MFC 241g, and is exhausted from the exhaust port 231a. At this time, the MS gas and the PH gas are supplied together and simultaneously to the wafer 200. At this time, the valves 243d and 243e are opened, and the N2 gas is supplied into the processing chamber 201 via the nozzles 249a and 249b, respectively.

[0133] By supplying the MS gas and the PH gas from the nozzle 249c to the wafer 200 under the processing conditions described later, Si is adsorbed (deposited) on the surface of the wafer 200, i.e., on the seed layer formed on the wafer 200, and a P-doped Si film is formed. Under the processing conditions described later, the crystal structure of the Si film formed on the wafer 200 becomes amorphous, poly, or a mixed crystal of amorphous and poly.

[0134] When the MS gas and the PH gas (hereinafter, these gases are also referred to as MS gas or the like) are supplied to the wafer 200, the balance between the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249b is controlled. Specifically, for example, the flow rate of the N2 gas supplied from the nozzle 249a is made different from the flow rate of the N2 gas supplied from the nozzle 249b. Thereby, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted.

[0135] In Figure 4In the film formation sequence shown, as an example, a case is shown in which the flow rate of N2 gas supplied from the nozzle 249a is made larger than the flow rate of N2 gas supplied from the nozzle 249b. In this case, for example, the flow rate of N2 gas supplied from the nozzle 249a is set to 500 to 2000 seem, and the flow rate of N2 gas supplied from the nozzle 249b is set to 10 to 400 seem. By controlling the flow rate balance in the above-described manner, it is possible to control the wafer in-plane concentration distribution (partial pressure distribution) of the MS gas or the like supplied to the wafer 200, that is, the supply amount distribution in the wafer plane. Specifically, it is possible to control in the direction in which the concentration (supply amount) of the MS gas or the like supplied to the central portion of the wafer 200 is increased (increased), and in the direction in which the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200 is decreased (decreased), respectively. In addition, depending on the degree of the above-described control, it is possible to make the concentration (supply amount) of the MS gas or the like supplied to the central portion of the wafer 200 the same as the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200, or to make it higher (more) than the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200. As a result, it is possible to make the in-plane film thickness distribution of the Si film formed on the wafer 200, for example, approach a flat distribution from a central concave distribution, or even approach a central convex distribution.

[0136] After the Si film having the desired in-plane film thickness distribution is formed on the wafer 200, the valves 243c, 243g are closed, and the supply of the MS gas and the supply of the PH gas into the processing chamber 201 are stopped, respectively. Then, by the same processing step as the purge step of Step 1 described above, the gas or the like remaining in the processing chamber 201 is exhausted from the processing chamber 201.

[0137] As the processing conditions in the Si film formation step, for example, the following can be exemplified:

[0138] MS gas supply flow rate: 10 to 2000 seem

[0139] PH gas supply flow rate: 0.1 to 500 seem

[0140] MS gas and PH gas supply time: 1 to 300 minutes

[0141] N2 gas supply flow rate (per gas supply pipe): 10 to 20000 seem

[0142] Processing temperature (2nd temperature): 500 to 650°C

[0143] Processing pressure: 30 to 200 Pa.

[0144] The processing conditions shown here are conditions in which the MS gas thermally decomposes in the processing chamber 201 in the presence of the MS gas alone, i.e., conditions in which a CVD reaction occurs. That is, the processing conditions shown here are conditions in which adsorption (deposition) of Si onto the wafer 200 is not self-limited, i.e., conditions in which adsorption of Si onto the wafer 200 is non-self-limited.

[0145] As the first processing gas, in addition to the MS gas, the above-described various silicon hydride gases, the above-described various halosilane-based gases can be used. For the purpose of suppressing the residual of halogen elements in the Si film, it is preferable to use a silicon hydride gas as the first processing gas, and for the purpose of increasing the film formation rate of the Si film, it is preferable to use a halosilane-based gas having high reactivity as the first processing gas.

[0146] As the dopant gas, in addition to the PH gas, a gas containing a Group V element such as arsine (AsH3) gas and an element (P, arsenic (As), etc.) that becomes solid alone can be used. In addition, as the dopant gas, in addition to the gas containing a Group V element, a gas containing a Group III element such as diborane (B2H6) gas, boron trichloride (BC13) gas, and an element (boron (B), etc.) that becomes solid alone can be used.

[0147] (Post-purge and atmospheric pressure recovery)

[0148] After the end of the Si film formation step, N2 gas as a purge gas is supplied from each of the nozzles 249a to 249c into the processing chamber 201, and is exhausted from the exhaust port 231a. Thereby, the processing chamber 201 is purged, and the gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (post-purge). Then, the atmosphere in the processing chamber 201 is replaced with an inactive gas (inactive gas replacement), and the pressure in the processing chamber 201 is returned to the normal pressure (atmospheric pressure recovery).

[0149] (Carrier boat unloading and wafer extraction)

[0150] The seal cap 219 is lowered by the carrier boat lifter 115, the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out to the outside of the reaction tube 203 in a state of being supported by the carrier boat 217 from the lower end of the manifold 209 (carrier boat unloading). After the carrier boat unloading, the gate 219s is moved, the lower end of the manifold 209 is opened, and is sealed by the gate 219s via the O-ring 220c (gate closing). After the processed wafer 200 is carried out to the outside of the reaction tube 203, the wafer is extracted from the carrier boat 217 (wafer extraction).

[0151] (3) Effects of the present embodiment

[0152] According to the present embodiment, one or more of the following effects can be obtained.

[0153] (a) In the Si film formation step, by controlling the balance of the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249b when the MS gas is supplied from the nozzle 249c, it is possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200. For example, it is possible to make the in-plane film thickness distribution of the Si film formed on the wafer 200 configured in the form of a bare wafer a central convex distribution. Thus, in the case where a pattern wafer is used as the wafer 200, it is possible to form a Si film having a flat distribution on the wafer 200.

[0154] The in-plane film thickness distribution of the film formed on the wafer 200 depends on the surface area of the wafer 200, which is considered to be caused by a so-called load effect. In the case where the raw material such as the MS gas flows from the outer peripheral portion side toward the central portion side of the wafer 200 as in the substrate processing apparatus in the present embodiment, the larger the surface area of the wafer 200 to be the film formation target becomes, the more the raw material such as the MS gas is consumed in large amounts at the outer peripheral portion of the wafer 200 and becomes difficult to reach the central portion thereof. As a result, the in-plane film thickness distribution of the film formed on the wafer 200 has a tendency to become a central concave distribution. According to the present embodiment, even in the case where a pattern wafer having a large surface area is used as the wafer 200, it is possible to correct the in-plane film thickness distribution of the film formed on the wafer 200 from a central concave distribution to a flat distribution, or even to a central convex distribution, and it is possible to freely control it.

[0155] (b) In the Si film formation step, by performing the supply of the N2 gas using two nozzles 249a and 249b, it is possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200 more precisely and in a wider range than in the case where the supply of the N2 gas is performed using one nozzle. This is because, according to the method of the present embodiment, it is possible to control the concentration (supply amount) of the MS gas or the like supplied to the central portion of the wafer 200 and the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200 respectively, that is, independently.

[0156] (c) By disposing at least the nozzle 249b, and preferably the nozzles 249a to 249c, respectively, in a manner opposed to the exhaust port 231a at least in plan view, it is possible to improve the controllability of the in-plane film thickness distribution of the Si film formed on the wafer 200. In addition, by disposing the nozzles 249a and 249c in a line-symmetrical manner with the straight line L as the axis of symmetry, it is possible to further improve the controllability of the in-plane film thickness distribution of the Si film formed on the wafer 200.

[0157] (d) By implementing the seed layer formation step after preparing the wafer 200 and before implementing the Si film formation step, the induction time (growth delay) of the Si film formed on the wafer 200 can be shortened, and the productivity of the film formation process can be improved.

[0158] (e) In the seed layer formation step, by alternately implementing the supply of the DCS gas and the supply of the DS gas, the formation efficiency of the seed layer can be improved, and in addition, the seed layer can be made dense. Thus, the productivity of the film formation process can be improved, and in addition, the Si film formed on the wafer 200 can be made dense. In addition, by alternately implementing the supply of the gas, the excess gas phase reaction in the processing chamber 201 can be suppressed, and the quality of the film formation process can be improved.

[0159] (f) In the case of using the first processing gas other than the MS gas, the case of using the second processing gas other than the DS gas, the case of using the third processing gas other than the DCS gas, the case of using the dopant gas other than the PH gas, and the case of using the non-active gas other than the N2 gas, the above effects can also be obtained.

[0160] (4) Modification

[0161] The film formation step in the present embodiment is not limited to Figure 4 the above-described manner, and can be changed in the manner of the following modification. The above-described modifications can be arbitrarily combined. In the case where not particularly described, the processing steps and the processing conditions in each step of each modification can be set to be the same as the processing steps and the processing conditions in each step of the above-described substrate processing sequence.

[0162] (Modification 1)

[0163] In the film formation sequence shown in Figure 4 , an example of implementing the seed layer formation step is described, but the seed layer formation step can be set not to be implemented. In the present modification, in the Si film formation step, when the MS gas is supplied from the nozzle 249c, by controlling the balance of the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249b, the in-plane film thickness distribution of the Si film formed on the wafer 200 can also be adjusted.

[0164] (Modification 2)

[0165] In the Si film formation step, when the MS gas or the like is supplied from the nozzle 249c, the flow rate of the N2 gas supplied from the nozzle 249a can also be made smaller than the flow rate of the N2 gas supplied from the nozzle 249b. In this case, for example, the flow rate of the N2 gas supplied from the nozzle 249a is set to 10 to 400 seem, and the flow rate of the N2 gas supplied from the nozzle 249b is set to 500 to 2000 seem. By controlling the flow rate balance in this way, it is possible to control in the direction in which the concentration (supply amount) of the MS gas or the like supplied to the central portion of the wafer 200 is decreased (reduced) and in the direction in which the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200 is increased (increased), respectively. As a result, it is possible to make the in-plane film thickness distribution of the Si film formed on the wafer 200 approach a flat distribution from a central convex distribution, or even a central concave distribution.

[0166] Note that, when the in-plane film thickness distribution of the Si film formed on the wafer 200 becomes a desired distribution, when the MS gas or the like is supplied from the nozzle 249c, the flow rate of the N2 gas supplied from the nozzle 249a can also be made equal to the flow rate of the N2 gas supplied from the nozzle 249b, instead of being made different.

[0167] (Modified Example 3)

[0168] It is also possible to control the balance of the flow rate of the N2 gas supplied from the nozzle 249b and the flow rate of the N2 gas supplied from the nozzle 249c, not only in the Si film formation step, but also when the DS gas is supplied from the nozzle 249a in Step 2 of the seed layer formation step. For example, by making the flow rate of the N2 gas supplied from the nozzle 249b different from the flow rate of the N2 gas supplied from the nozzle 249c, it is possible to adjust the in-plane thickness distribution of the seed layer formed on the wafer 200, and as a result, it is possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200.

[0169] For example, when the DS gas is supplied from the nozzle 249a, the flow rate of the N2 gas supplied from the nozzle 249b can also be made smaller than the flow rate of the N2 gas supplied from the nozzle 249c. In this case, for example, the flow rate of the N2 gas supplied from the nozzle 249b is set to 10 to 400 seem, and the flow rate of the N2 gas supplied from the nozzle 249c is set to 500 to 2000 seem. By controlling the flow rate balance in this way, it is possible to make the in-plane thickness distribution of the seed layer formed on the wafer 200 approach a flat distribution from a central concave distribution, or even a central convex distribution.

[0170] Also, for example, when the DS gas is supplied from the nozzle 249a, the flow rate of the N2 gas supplied from the nozzle 249b can be made larger than the flow rate of the N2 gas supplied from the nozzle 249c. In this case, for example, the flow rate of the N2 gas supplied from the nozzle 249b is set to 500 to 2000 seem, and the flow rate of the N2 gas supplied from the nozzle 249c is set to 10 to 400 seem. By controlling the flow rate balance in this way, the in-plane thickness distribution of the seed layer formed on the wafer 200 can be made to approach a flat distribution from a central convex distribution, or even to a central concave distribution, for example.

[0171] (Modified Example 4)

[0172] In Step 2 of the seed layer formation step, the wafer 200 can also be supplied with the N2 gas from the nozzle 249a, the wafer 200 can be supplied with the N2 gas from the nozzle 249b, and the wafer 200 can be supplied with the DS gas from the nozzle 249c. That is, in the Si film formation step and Step 2 of the seed layer formation step, the supply of the process gas (DS gas, MS gas) can also be performed from the common nozzle 249c.

[0173] In this case, in Step 2, the in-plane thickness distribution of the seed layer formed on the wafer 200 can also be adjusted by controlling the balance of the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249b while the DS gas is supplied from the nozzle 249c. In this case, the supply conditions of the N2 gas supplied from the nozzles 249a and 249b can be set to be the same as the conditions in the Si film formation step.

[0174] For example, when the DS gas is supplied from the nozzle 249c, the in-plane thickness distribution of the seed layer formed on the wafer 200 can be made to approach a flat distribution from a central concave distribution, or even to a central convex distribution, by making the flow rate of the N2 gas supplied from the nozzle 249a larger than the flow rate of the N2 gas supplied from the nozzle 249b. As a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted.

[0175] Also, for example, when the DS gas is supplied from the nozzle 249c, the in-plane thickness distribution of the seed layer formed on the wafer 200 can be made to approach a flat distribution from a central convex distribution, or even to a central concave distribution, by making the flow rate of the N2 gas supplied from the nozzle 249a smaller than the flow rate of the N2 gas supplied from the nozzle 249b. As a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted.

[0176] (Modified Example 5)

[0177] In Step 1 of the seed layer forming step, the supply of the DCS gas to the wafer 200 can also be performed from either of the nozzles 249a, 249c.

[0178] Note that in Step 1, the balance of the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249b can also be controlled while the supply of the DCS gas from the nozzle 249c is performed. For example, by making the flow rate of the N2 gas supplied from the nozzle 249a different from the flow rate of the N2 gas supplied from the nozzle 249b, it is possible to make the degree of cleaning performed on the surface of the wafer 200 different in the in-plane direction of the wafer 200. Thereby, it is possible to adjust the in-plane thickness distribution of the seed layer formed on the wafer 200, and as a result, it is possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200.

[0179] For example, when the supply of the DCS gas from the nozzle 249c is performed, by making the flow rate of the N2 gas supplied from the nozzle 249a greater than the flow rate of the N2 gas supplied from the nozzle 249b, it is possible to control in the direction in which the effect of cleaning the central portion of the wafer 200 is increased, or in the direction in which the effect of cleaning the outer peripheral portion of the wafer 200 is decreased, respectively. Thereby, it is possible to make the in-plane thickness distribution of the seed layer formed on the wafer 200, that is, the in-plane film thickness distribution of the Si film formed on the wafer 200, approach a flat distribution from a central concave distribution, or even approach a central convex distribution.

[0180] Further, for example, when the supply of the DCS gas from the nozzle 249c is performed, by making the flow rate of the N2 gas supplied from the nozzle 249a less than the flow rate of the N2 gas supplied from the nozzle 249b, it is possible to control in the direction in which the effect of cleaning the central portion of the wafer 200 is decreased, and in the direction in which the effect of cleaning the outer peripheral portion of the wafer 200 is increased, respectively. Thereby, it is possible to make the in-plane thickness distribution of the seed layer formed on the wafer 200, that is, the in-plane film thickness distribution of the Si film formed on the wafer 200, approach a flat distribution from a central convex distribution, or even approach a central concave distribution.

[0181] In Step 1, when the supply of the DCS gas from the nozzle 249a is performed, the same effects can be obtained by controlling the balance of the flow rate of the N2 gas supplied from the nozzle 249b and the flow rate of the N2 gas supplied from the nozzle 249c.

[0182] (Variation 6)

[0183] In Modification Examples 3 to 5, the flow rate balance control of the N2 gas in the Si film formation step can also be set not to be performed. In this case, by adjusting the in-plane thickness distribution of the seed layer formed on the wafer 200, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted to some extent.

[0184] (Modification Example 7)

[0185] As shown in the film formation sequence below, in the seed layer formation step, Step 1 can be set not to be performed and Step 2 can be performed a prescribed number of times (one or more times). In Step 2, as the second treatment gas, in addition to the silicohydride gas, an aminosilane gas such as tetra(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as: 4DMAS) gas, tri(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as: 3DMAS) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as: BDEAS) gas, bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, abbreviated as: BTBAS) gas, di(isopropylamino)silane (SiH3N[CH(CH3)2]2, abbreviated as: DIPAS) gas, or the like can also be used.

[0186] Doping Si

[0187] (Modification Example 8)

[0188] As shown in the film formation sequence below, in the seed layer formation step, Step 1 and Step 2 can each be performed once. In Step 1, as the third treatment gas, in addition to the halosilane gas, a halogen gas not containing Si such as HCl gas can also be used.

[0189] Doping Si

[0190] (Modification Example 9)

[0191] As the first treatment gas, in addition to the silicohydride gas, for example, a chlorosilane gas such as DCS gas, HCDS gas, an aminosilane gas such as 3DMAS gas, BDEAS gas, or the like can also be used.

[0192] In addition, as the reaction body, in addition to the above-described treatment gas, for example, an amine gas such as triethylamine ((C2H5)3N, abbreviated as: TEA) gas, oxygen (O2) gas, water vapor (H2O gas), ozone (O3) gas, plasma-excited O2 gas (O2 *), an oxygen (O) -containing gas (oxidizer) such as O2 gas + hydrogen (H2) gas, a carbon (C) -containing gas such as propylene (C3H6) gas, a B-containing gas such as BCl3 gas.

[0193] In addition, the silicon nitride film (Si film), silicon oxynitride film (SiON film), silicon oxycarbide film (SiOC film), silicon carbonitride film (SiCN film), silicon oxycarbonitride film (SiOCN film), silicon borocarbonitride film (SiBCN film), silicon boronitride film (SiBN film), silicon oxide film (SiO film) can also be formed on the wafer 200 using, for example, the film formation sequence shown below. In the film formation sequence below, the flow rate balance of the N2 gas supplied from the nozzles 249a, 249b is controlled in the same manner as in the film formation sequence shown in Figure 4 Figure 4

[0194]

[0195]

[0196]

[0197]

[0198]

[0199]

[0200]

[0201]

[0202]

[0203]

[0204]

[0205] Note that the processing conditions in the step of supplying the first processing gas in this modification example can be exemplified as follows:

[0206] First processing gas supply flow rate: 10 to 2000 seem

[0207] First processing gas supply time: 1 to 120 seconds

[0208] ​​Process temperature: 250 to 800°C

[0209] Process pressure: 1 to 2666 Pa. Other process conditions are set to the same process conditions as in the Si film forming step of the film formation sequence shown in FIG. 2. Figure 4

[0210] Further, as the process conditions in the step of supplying the reaction body, the following can be exemplified:

[0211] Reaction body supply flow rate: 100 to 10000 seem

[0212] Reaction body supply time: 1 to 120 seconds

[0213] Process pressure: 1 to 4000 Pa. Other process conditions are set to the same process conditions as in the step of supplying the first process gas in the present modified example.

[0214] Note that, in the present modified example, the seed layer forming step can also be performed on the wafer 200 after the wafer 200 is prepared, before the film formation sequence described above is performed.

[0215] <Other Embodiments>

[0216] The embodiments of the present application are specifically described above. However, the present application is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0217] In the above-described embodiments, the example in which the nozzles 249a to 249c are arranged adjacent to (close to) each other is described, but the present application is not limited to this. For example, the nozzles 249a and 249c can also be arranged at positions apart from the nozzle 249b in the space between the inner wall of the reaction tube 203 and the wafer 200, which is circular ring-shaped in plan view.

[0218] ​In the above embodiment, the case where the first to third supply portions are formed of the nozzles 249a to 249c and three nozzles are provided in the processing chamber 201 has been described, but the present application is not limited to this. For example, at least one of the first to third supply portions can be formed of two or more nozzles. Further, a nozzle other than the first to third supply portions can be newly provided in the processing chamber 201, and the nozzle can be used to supply N2 gas or various processing gases. In the case where a nozzle other than the nozzles 249a to 249c is provided in the processing chamber 201, the newly provided nozzle can be provided at a position opposite to the exhaust port 231a in plan view, or can be provided at a position not opposite thereto. That is, the newly provided nozzle can be provided at a position apart from the nozzles 249a to 249c, for example, at a position in the middle between the nozzles 249a to 249c and the exhaust port 231a along the outer periphery of the wafer 200 in a space in the shape of a circular ring between the inner wall of the reaction tube 203 and the wafer 200 in plan view, or at a position near the middle position.

[0219] In the above embodiment, the case where a film containing Si as a main element is formed on a substrate has been described, but the present application is not limited to this. That is, the present application can be suitably applied to a case where a film containing a semimetal element such as germanium (Ge) or B as a main element is formed on a substrate, in addition to Si. Further, the present application can be suitably applied to a case where a film containing a metal element such as titanium (Ti), zirconium (Zr), hafnium (Hf), niobium (Nb), tantalum (Ta), molybdenum (Mo), tungsten (W), yttrium (Y), lanthanum (La), strontium (Sr), or aluminum (Al) as a main element is formed on a substrate.

[0220] It is preferable that processes for substrate processing be prepared individually according to the contents of processing, and be stored in advance in the storage device 121c via the electric communication line or the external storage device 123. Further, it is preferable that, at the start of processing, the CPU 121a appropriately select an appropriate process from among a plurality of processes stored in the storage device 121c according to the contents of substrate processing. Thus, various film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility by one substrate processing apparatus. Furthermore, it is possible to reduce the burden on the operator, prevent operation errors, and rapidly start substrate processing.

[0221] The above processes are not limited to cases where they are newly created, and for example, they can be prepared by changing an existing process already installed in a substrate processing apparatus. In the case where a process is changed, the changed process can be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the process is recorded. Further, the input / output device 122 provided in an existing substrate processing apparatus can be operated to directly change an existing process already installed in the substrate processing apparatus.

[0222] In the above embodiment, the case where the first to third supply portions are provided in the processing chamber in a manner along the inner wall of the reaction tube was described. However, the present application is not limited to the above embodiment. For example, as shown in the cross-sectional structure of the vertical processing furnace in (b), a buffer chamber can be provided in the side wall of the reaction tube, and the first to third supply portions of the same configuration as in the above embodiment can be provided in the buffer chamber in the same configuration as in the above embodiment. Figure 5 (a), a buffer chamber for supply and a buffer chamber for exhaust can be provided in the side wall of the reaction tube, and they can be arranged at positions opposite each other with the wafer interposed. Note that the buffer chamber for supply and the buffer chamber for exhaust are provided from the lower part of the side wall of the reaction tube to the upper part, i.e., along the wafer arrangement region. Further, in the above embodiment, the case where the buffer chamber for supply is divided into three spaces and each nozzle is arranged in each space was described. The arrangement of the three spaces of the buffer chamber is the same as the arrangement of the first to third supply portions. Further, for example, as shown in the cross-sectional structure of the vertical processing furnace in (b), a buffer chamber can be provided in the side wall of the reaction tube, and the first to third supply portions of the same configuration as in the above embodiment can be provided in the buffer chamber in the same configuration as in the above embodiment. Figure 5 (a), a buffer chamber for supply and a buffer chamber for exhaust can be provided in the side wall of the reaction tube, and they can be arranged at positions opposite each other with the wafer interposed. Note that the buffer chamber for supply and the buffer chamber for exhaust are provided from the lower part of the side wall of the reaction tube to the upper part, i.e., along the wafer arrangement region. Further, in the above embodiment, the case where the buffer chamber for supply is divided into three spaces and each nozzle is arranged in each space was described. The arrangement of the three spaces of the buffer chamber is the same as the arrangement of the first to third supply portions. Further, for example, as shown in the cross-sectional structure of the vertical processing furnace in (b), a buffer chamber can be provided in the side wall of the reaction tube, and the first to third supply portions of the same configuration as in the above embodiment can be provided in the buffer chamber in the same configuration as in the above embodiment. Figure 5 (a), a buffer chamber for supply and a buffer chamber for exhaust can be provided in the side wall of the reaction tube, and they can be arranged at positions opposite each other with the wafer interposed. Note that the buffer chamber for supply and the buffer chamber for exhaust are provided from the lower part of the side wall of the reaction tube to the upper part, i.e., along the wafer arrangement region. Further, in the above embodiment, the case where the buffer chamber for supply is divided into three spaces and each nozzle is arranged in each space was described. The arrangement of the three spaces of the buffer chamber is the same as the arrangement of the first to third supply portions. Further, for example, as shown in the cross-sectional structure of the vertical processing furnace in (b), a buffer chamber can be provided in the side wall of the reaction tube, and the first to third supply portions of the same configuration as in the above embodiment can be provided in the buffer chamber in the same configuration as in the above embodiment. Figure 5 (b), a buffer chamber can be provided in the side wall of the reaction tube in the same configuration as in (a), the second supply portion can be provided in the buffer chamber, and the first and third supply portions can be provided in a manner along the inner wall of the reaction tube with the communication part of the buffer chamber interposed between the two sides and communicating with the processing chamber. Note that the first and third supply portions are arranged in a manner along the inner wall of the reaction tube with the communication part of the buffer chamber interposed between the two sides and communicating with the processing chamber. Figure 5 (a), a buffer chamber can be provided in the side wall of the reaction tube in the same configuration as in (a), the second supply portion can be provided in the buffer chamber, and the first and third supply portions can be provided in a manner along the inner wall of the reaction tube with the communication part of the buffer chamber interposed between the two sides and communicating with the processing chamber. Note that the first and third supply portions are arranged in a manner along the inner wall of the reaction tube with the communication part of the buffer chamber interposed between the two sides and communicating with the processing chamber. Figure 5 (a), a buffer chamber can be provided in the side wall of the reaction tube in the same configuration as in (a), the second supply portion can be provided in the buffer chamber, and the first and third supply portions can be provided in a manner along the inner wall of the reaction tube with the communication part of the buffer chamber interposed between the two sides and communicating with the processing chamber. Note that the first and third supply portions are arranged in a manner along the inner wall of the reaction tube with the communication part of the buffer chamber interposed between the two sides and communicating with the processing chamber. Figure 5 (b), the configuration of each part of the processing furnace is the same as that shown in (a). In the case where these processing furnaces are used, the same effects as in the above embodiment can be obtained. Figure 1 (b), the configuration of each part of the processing furnace is the same as that shown in (a). In the case where these processing furnaces are used, the same effects as in the above embodiment can be obtained.

[0223] In the above embodiment, the case where the first to third supply portions are provided in the processing chamber in a manner along the inner wall of the reaction tube was described. However, the present application is not limited to the above embodiment. For example, as shown in the cross-sectional structure of the vertical processing furnace in (b), a buffer chamber can be provided in the side wall of the reaction tube, and the first to third supply portions of the same configuration as in the above embodiment can be provided in the buffer chamber in the same configuration as in the above embodiment.

[0224] In the case where these substrate processing apparatuses are used, film formation can be performed in the same sequence and under the same processing conditions as in the above embodiment and modified example, and the same effects as in them can be obtained.

[0225] Furthermore, the above-described embodiments and variations can be used in appropriate combinations. The processing steps and conditions can then be set to be, for example, the same as those in the above-described embodiments.

[0226] The various effects described in this specification can be achieved not only when the processing gas supplied to the substrate undergoes thermal decomposition (without self-limitation) to form a film on the substrate, but also when the processing gas supplied to the substrate undergoes thermal decomposition (with self-limitation). Among these effects, those related to the adjustment of the in-plane film thickness distribution are particularly effective when film formation on the substrate is performed under conditions of thermal decomposition of the processing gas supplied to the substrate and CVD reaction.

[0227] Example

[0228] As sample A, using Figure 1 The substrate processing apparatus shown utilizes Figure 4 The film formation sequence shown is used to form a Si film on a wafer. During the Si film formation step, the flow rate of N2 gas supplied from the first supply unit is set to a predetermined flow rate within the range of 150 to 250 sccm, and the flow rate of N2 gas supplied from the second supply unit is set to a predetermined flow rate within the range of 40 to 80 sccm. Other processing conditions are set to predetermined conditions within the range of processing conditions described in the above embodiment.

[0229] As sample B, using Figure 1 The substrate processing apparatus shown utilizes Figure 4 The film formation sequence shown is used to form a Si film on a wafer. During the Si film formation step, the flow rate of N2 gas supplied from the first supply unit is set to a predetermined flow rate within the range of 450 to 550 sccm, and the flow rate of N2 gas supplied from the second supply unit is set to a predetermined flow rate within the range of 40 to 80 sccm. Other processing conditions are set to be the same as those used when preparing sample A.

[0230] As sample C, using Figure 1 The substrate processing apparatus shown utilizes Figure 4The film formation sequence shown is used to form a Si film on a wafer. During the Si film formation step, the flow rate balance of the N2 gas supplied from the first and second supply units is set to be opposite to that used during the fabrication of sample A. Specifically, during the Si film formation step, the flow rate of the N2 gas supplied from the first supply unit is set to a predetermined flow rate within the range of 250 to 350 sccm, and the flow rate of the N2 gas supplied from the second supply unit is set to a predetermined flow rate within the range of 700 to 900 sccm. Other processing conditions are set to be the same as those used during the fabrication of sample A.

[0231] In addition, the film thickness at the outer periphery of the Si film in samples A to C was measured and compared. Figure 6 (a) is a graph comparing the measurement results of samples A and B. Figure 6 (b) is a graph comparing the measurement results of samples A and C. Figure 6 In (a), the measurement positions (distances from the center of the wafer) of samples A and B are corresponding positions. Figure 6 The measurement positions (distances from the center of the wafer) of samples A and C in (b) are also corresponding positions. Figure 6 The measurement locations of samples A and B in (a) are... Figure 6 (b) The measurement locations of samples A and C are different positions on the outer periphery of the wafer. Figure 6 (a) Figure 6 (b) shows the film thickness on the vertical axis. Separately, Figure 6 (a) shows samples A and B on the horizontal axis. Figure 6 (b) shows samples A and C on the horizontal axis.

[0232] according to Figure 6 (a) It can be seen that the Si film thickness at the outer periphery of the wafer is thinner than that of sample A. That is, it can be seen that when performing the Si film formation step, by increasing the flow rate of N2 gas supplied from the first supply unit, that is, by increasing the ratio of the flow rate of N2 gas supplied from the first supply unit to the flow rate of N2 gas supplied from the second supply unit, it is possible to adjust the Si film thickness formed at the outer periphery of the wafer to be thinner.

[0233] In addition, according to Figure 6(b) As is apparent, the film thickness at the wafer periphery portion of the Si film of sample B is thicker than the film thickness at the wafer periphery portion of the Si film of sample A. That is, it is apparent that when the Si film forming step is performed, by reversing the flow balance in such a manner that the flow rate of the N2 gas supplied from the second supply portion is greater than the flow rate of the N2 gas supplied from the first supply portion, it is possible to adjust in the direction in which the film thickness of the Si film formed at the wafer periphery portion is made thicker.

[0234] As is apparent from the above results, by controlling the balance of the flow rate of the N2 gas supplied from the first supply portion and the flow rate of the N2 gas supplied from the second supply portion when the Si film forming step is performed, it is possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer in a wider range and with greater precision.

Claims

1. A substrate processing method comprising the following steps: The process of preparing the substrate; and A process in which an inactive gas is supplied to the substrate from a first supply unit and a second supply unit, and a processing gas is supplied to the substrate from a third supply unit, thereby forming a film containing elements contained in the processing gas on the substrate, wherein... The third supply section is located on the opposite side of the first supply section, separated by a straight line passing through the center of the second supply section and the substrate. The process of forming the film is performed without imposing a self-limiting effect on the adsorption of the elements contained in the processing gas onto the surface of the substrate. In the process of forming the membrane, the in-plane thickness distribution of the membrane formed on the substrate is adjusted by controlling the balance between the flow rate of the inactive gas supplied from the first supply unit and the flow rate of the inactive gas supplied from the second supply unit.

2. The substrate processing method according to claim 1, wherein, The flow rate of the inactive gas supplied from the first supply unit is different from the flow rate of the inactive gas supplied from the second supply unit.

3. The substrate processing method according to claim 1, wherein, The flow rate of the inactive gas supplied from the first supply unit is greater than the flow rate of the inactive gas supplied from the second supply unit.

4. The substrate processing method according to claim 1, wherein, The flow rate of the inactive gas supplied from the first supply unit is less than the flow rate of the inactive gas supplied from the second supply unit.

5. The substrate processing method according to claim 1, wherein, After the substrate preparation step and before the film formation step, the following further steps are performed: The process of supplying a second processing gas to the substrate from the first supply unit, and supplying an inactive gas to the substrate from the second supply unit and the third supply unit, thereby forming a seed layer on the substrate. In the process of forming the seed layer, the in-surface thickness distribution of the seed layer formed on the substrate is adjusted by controlling the balance between the flow rate of the inactive gas supplied from the second supply unit and the flow rate of the inactive gas supplied from the third supply unit.

6. The substrate processing method according to claim 5, wherein, The flow rate of the inactive gas supplied from the second supply unit is different from the flow rate of the inactive gas supplied from the third supply unit.

7. The substrate processing method according to claim 5, wherein, The flow rate of the inactive gas supplied from the second supply unit is less than the flow rate of the inactive gas supplied from the third supply unit.

8. The substrate processing method according to claim 5, wherein, The flow rate of the inactive gas supplied from the second supply unit is greater than the flow rate of the inactive gas supplied from the third supply unit.

9. The substrate processing method according to claim 5, wherein, In the process of forming the seed layer, the following processes will be performed alternately in a predetermined number of cycles: The process of supplying a third processing gas to the substrate from any one of the first supply unit, the second supply unit, and the third supply unit; and The process of supplying the second processing gas to the substrate from the first supply unit, and supplying the substrate with an inactive gas from the second supply unit and the third supply unit.

10. The substrate processing method according to claim 9, wherein, In the process of supplying the third processing gas, an inactive gas is supplied to the substrate from the first supply unit and the third supply unit, and the third processing gas is supplied to the substrate from the second supply unit.

11. The substrate processing method according to claim 1, wherein, After the substrate preparation step and before the film formation step, the following further steps are performed: The process of supplying an inactive gas to the substrate from the first supply unit and the second supply unit, and supplying a second processing gas to the substrate from the third supply unit, thereby forming a seed layer on the substrate. In the process of forming the seed layer, the in-surface thickness distribution of the seed layer formed on the substrate is adjusted by controlling the balance between the flow rate of the inactive gas supplied from the first supply unit and the flow rate of the inactive gas supplied from the second supply unit.

12. The substrate processing method according to claim 11, wherein, The flow rate of the inactive gas supplied from the first supply unit is different from the flow rate of the inactive gas supplied from the second supply unit.

13. The substrate processing method according to claim 11, wherein, The flow rate of the inactive gas supplied from the first supply unit is greater than the flow rate of the inactive gas supplied from the second supply unit.

14. The substrate processing method according to claim 11, wherein, The flow rate of the inactive gas supplied from the first supply unit is less than the flow rate of the inactive gas supplied from the second supply unit.

15. The substrate processing method according to claim 11, wherein, In the process of forming the seed layer, the following processes will be performed alternately in a predetermined number of cycles: The process of supplying a third processing gas to the substrate from any one of the first supply unit, the second supply unit, and the third supply unit; and The process of supplying an inactive gas to the substrate from the first supply unit and the second supply unit, and supplying the second processing gas to the substrate from the third supply unit.

16. The substrate processing method according to claim 15, wherein, In the process of supplying the third processing gas, an inactive gas is supplied to the substrate from the first supply unit and the third supply unit, and the third processing gas is supplied to the substrate from the second supply unit.

17. The substrate processing method according to any one of claims 1 to 16, wherein, Viewed from above, the second supply unit is arranged opposite the exhaust port for venting the gases, separated by the substrate, and the first supply unit and the third supply unit are arranged with a straight line passing through the second supply unit and the exhaust port.

18. The substrate processing method according to claim 17, wherein, The first supply section and the third supply section are arranged linearly symmetrically with a straight line passing through the second supply section and the exhaust port as the axis of symmetry.

19. A method for manufacturing a semiconductor device, comprising the following steps: The process of preparing the substrate; and A process in which an inactive gas is supplied to the substrate from a first supply unit and a second supply unit, and a processing gas is supplied to the substrate from a third supply unit, thereby forming a film containing elements contained in the processing gas on the substrate, wherein... The third supply section is located on the opposite side of the first supply section, separated by a straight line passing through the center of the second supply section and the substrate. The process of forming the film is performed without imposing a self-limiting effect on the adsorption of the elements contained in the processing gas onto the surface of the substrate. In the process of forming the membrane, the in-plane thickness distribution of the membrane formed on the substrate is adjusted by controlling the balance between the flow rate of the inactive gas supplied from the first supply unit and the flow rate of the inactive gas supplied from the second supply unit.

20. A substrate processing apparatus, comprising: The first supply system supplies an inactive gas to the substrate from the first supply section; The second supply system supplies inactive gas to the substrate from the second supply section; The third supply system supplies processing gas to the substrate from the third supply section, wherein... The third supply section is located on the opposite side of the first supply section, separated by a straight line passing through the center of the second supply section and the substrate; and A control unit is configured to control the first supply system, the second supply system, and the third supply system to perform the following process: supplying an inactive gas to a prepared substrate from the first supply unit and the second supply unit, and supplying the processing gas to the substrate from the third supply unit, thereby forming a film containing elements contained in the processing gas on the substrate. The film formation process is performed without imposing self-limiting conditions on the adsorption of the elements contained in the processing gas onto the surface of the substrate. During the film formation process on the substrate, the in-plane thickness distribution of the film formed on the substrate is adjusted by controlling the balance between the flow rates of the inactive gas supplied from the first supply unit and the flow rates of the inactive gas supplied from the second supply unit.

21. A computer-readable recording medium having a program recorded thereon that causes a substrate processing apparatus to perform the following steps via a computer: Steps for preparing a substrate; In the processing chamber, an inactive gas is supplied to the substrate from a first supply unit and a second supply unit, and a processing gas is supplied to the substrate from a third supply unit, thereby forming a film containing elements contained in the processing gas on the substrate, wherein... The third supply section is located on the opposite side of the first supply section, separated by a straight line passing through the center of the second supply section and the substrate; The step of forming the film is performed without imposing a self-limiting effect on the adsorption of the elements contained in the processing gas onto the substrate; and In the step of forming the membrane, the in-plane thickness distribution of the membrane formed on the substrate is adjusted by controlling the balance between the flow rate of the inactive gas supplied from the first supply unit and the flow rate of the inactive gas supplied from the second supply unit.

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