An air inlet structure applicable to vertical film-forming equipment

Abstract

The present invention discloses an air intake structure applicable to a vertical film-forming device, which relates to the technical field of semiconductor production equipment. The main structure includes an air intake combination structure arranged in an air intake chamber. The air intake combination structure includes a plurality of spray plates. An air intake layer is respectively arranged between the top spray plate and the inner top wall of the air intake chamber and between adjacent spray plates. A plurality of air inlets are arranged on the side wall of the air intake chamber, and each air intake layer is respectively communicated with an air inlet; each air intake layer is independently communicated with a reaction chamber. By adopting stratified air intake, the reaction gas has a separate flow channel and is isolated by a protective gas, which can reduce the mixing reaction of the reaction gas in the flow channel of the air intake chamber to form deposits. However, there may still be impurity attachment and surface damage during long-term thin film preparation. The combined flow channel of the components can replace the components in time to ensure uniform air intake and make the quality of the epitaxial film consistent. The number of channels in each layer of the flow channel and the installation position of the conduit can be adjusted according to the situation to meet the needs of different growth processes.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production equipment, and particularly to an air inlet structure applicable to a vertical film forming equipment. Background Art

[0002] The film forming device can stably prepare epitaxial thin film wafers for a long time and is widely used in the semiconductor industry. The vertical film forming device uses a top air inlet chamber to supply gas downward, and the wafer substrate rotates at a high speed with the base to achieve uniform contact between the reaction gas and the wafer, improving the film thickness uniformity. In the air inlet chamber, the reaction gases are mixed and react on the contact surface to form deposits. As the gas flows, solid particles may fall onto the wafer surface, affecting the film forming quality.

[0003] Different gas flow channels are arranged inside the air inlet chamber to isolate the reaction gases, so that the reaction gases enter the reaction chamber relatively independently to avoid premature reaction and the formation of impurities deposited on the inner wall of the air inlet chamber. The gas at the outlet end of the air inlet chamber may spread to other gas outlets, forming deposits at the nozzles. Summary of the Invention

[0004] To solve the above technical problems, the present invention provides an air inlet structure applicable to a vertical film forming equipment. The reaction gas vertically passes downward through the protective gas area along the nozzle and is ejected from the lower end of the air inlet chamber. There is an annular protective gas jet outlet around the ejection port, separating the two reaction gases at the outlet end to avoid deposition after the reaction gases are mixed at the end.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] The present invention provides an air inlet structure applicable to a vertical film forming equipment, including an air inlet chamber, a reaction chamber, and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is located in the lower part of the reaction chamber and directly below the air inlet chamber; the top of the base is used to support the wafer; a base thermal field is arranged inside the base, and the base thermal field is used to heat the wafer; an exhaust port is arranged at the bottom of the reaction chamber; a sleeve is arranged inside the reaction chamber, and an upper thermal field is arranged between the sleeve and the side wall of the reaction chamber; an air inlet combination structure is arranged inside the air inlet chamber, and the air inlet combination structure includes a plurality of spray plates arranged in sequence from top to bottom. An air inlet layer is arranged between the top spray plate and the top wall of the air inlet chamber and between adjacent spray plates respectively. A plurality of air inlets are arranged on the side wall of the air inlet chamber, and each air inlet layer is respectively communicated with one air inlet; each air inlet layer is independently communicated with the reaction chamber.

[0007] Optionally, the intake combination structure includes a first spray plate, a second spray plate, a third spray plate, and a fourth spray plate arranged in sequence from top to bottom; at least one light-passing hole conduit is provided on the first spray plate; the position of the light-passing hole conduit corresponds to the temperature-measuring window at the top of the intake chamber; at least one light-passing hole conduit corresponding to the light-passing hole conduit on the first spray plate and a nozzle are provided on the second spray plate; at least one light-passing hole conduit corresponding to the light-passing hole conduit on the first spray plate and two nozzles are provided on the third spray plate, and one of the nozzles corresponds to the one nozzle on the second spray plate; a plurality of stepped holes are provided on the fourth spray plate; the stepped holes respectively correspond to the light-passing hole conduits and the two nozzles on the third spray plate; and an annular air flow passage is provided between the inner side wall of the stepped hole and the outer side walls of the light-passing hole conduit and the two nozzles.

[0008] Optionally, the intake combination structure further includes a fifth spray plate arranged between the first spray plate and the second spray plate; at least one light-passing hole conduit corresponding to the light-passing hole conduit on the first spray plate and a nozzle conduit penetrating through the second spray plate and the third spray plate are provided on the fifth spray plate; an air flow passage is provided between the nozzle conduit and the inner wall of the corresponding nozzle.

[0009] Optionally, a plurality of air outlet holes are further provided on the fourth spray plate.

[0010] Optionally, the air inlet is communicated with a gas source, and an air path control valve and a flow meter are provided between the gas source and the air inlet.

[0011] Optionally, the exhaust port is communicated with a vacuum pump through an exhaust pipe, and a shut-off valve and a regulating valve are provided on the exhaust pipe.

[0012] The present invention has achieved the following technical effects compared with the prior art:

[0013] 1. By adopting stratified intake, the reaction gas has a separate flow path and is isolated by a protective gas, which can reduce the mixing and reaction of the reaction gas in the flow path of the intake chamber to form deposits. There may still be impurity adhesion and surface damage during long-term thin film preparation. The combined flow path of the components can replace the components in time to ensure uniform intake and make the quality of the epitaxial film consistent.

[0014] 2. The number of channels in each layer of the flow path and the installation position of the conduits can be adjusted according to the situation to meet the needs of different growth processes. Description of the Drawings

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0016] Figure 1 It is a schematic diagram of the internal structure composition and position distribution of the vertical film-forming equipment;

[0017] Figure 2 It is a combined structure diagram of the spray plate in the intake chamber;

[0018] Figure 3 It is a schematic diagram of the assembly sequence after the spray plate is disassembled;

[0019] Figure 4 It is a partial enlarged view of the structure of the nozzle end and the peripheral annular flow channel;

[0020] Figure 5 It is a schematic diagram of the internal structure composition and position distribution of the separation layer added between two reaction gases in the intake chamber of the vertical film-forming equipment;

[0021] Figure 6 It is a combined structure diagram of the spray plate with the separation layer added in the intake chamber;

[0022] Figure 7 It is a schematic diagram of the assembly sequence after the spray plate with the separation layer added is disassembled;

[0023] Figure 8 It is a partial enlarged view of the structure of the nozzle duct end and the external double-layer annular flow channel.

[0024] Explanation of reference numerals: 1. Top cover plate; 2. Intake chamber; 3. Reaction chamber; 4. Thermal insulation layer; 5. Guide cover; 6. Sleeve; 7. Upper thermal field; 8. Wafer; 9. Substrate; 10. Base thermal field; 11. Base; 12. Reaction chamber bottom plate; 13. Exhaust port; 14. Exhaust pipeline; 15. Shut-off valve; 16. Regulating valve; 17. Vacuum pump; 18. Rotating shaft; 19. Rotating chamber; 20. Radiation thermometer; 21. Temperature measurement window; 22. Intake combination structure; 23. Intake port; 24. Gas source; 25. Gas path control valve; 26. Flowmeter; 27. Spray plate; 28. Light passing hole duct; 29. Nozzle; 30. Annular gas outlet flow channel; 31. Step hole; 32. Intake combination extension structure; 33. Air outlet hole; 34. Nozzle duct; 35. Sleeve nozzle; 36. Temperature measurement protection layer; 37. First intake layer; 38. Second intake layer; 39. Isolated intake layer; 40. Reaction gas separation layer.

[0025] a, the first spray plate; b, the second spray plate; c, the third spray plate; d, the fourth spray plate; e, the fifth spray plate. Detailed implementation mode

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0027] Embodiment 1:

[0028] As Figures 1 to 4 shown, this embodiment provides an air intake structure applicable to a vertical film-forming device, including an air intake chamber 2, a reaction chamber 3, and a base 11; the reaction chamber 3 is arranged at the bottom of the air intake chamber 2, and the air intake chamber 2 is communicated with the reaction chamber 3; the base 11 is located in the lower part of the reaction chamber 3 and directly below the air intake chamber 2; the top of the base 11 is used to support the wafer 8; a base thermal field 10 is arranged in the base 11, and the base thermal field 10 is used to heat the wafer 8; an exhaust port 13 is arranged at the bottom of the reaction chamber 3; a sleeve 6 is arranged in the reaction chamber 3, and an upper thermal field 7 is arranged between the sleeve 6 and the side wall of the reaction chamber 3; an air intake combination structure 22 is arranged in the air intake chamber 2, and the air intake combination structure 22 includes a plurality of spray plates 27 arranged in sequence from top to bottom. An air intake layer is arranged between the top spray plate 27 and the inner top wall of the air intake chamber 2 and between adjacent spray plates 27 respectively. A plurality of air intake ports 23 are arranged on the side wall of the air intake chamber 2, and each air intake layer is respectively communicated with an air intake port 23; each air intake layer is independently communicated with the reaction chamber 3.

[0029] In this specific embodiment, the intake combination structure 22 includes a first spray plate a, a second spray plate b, a third spray plate c, and a fourth spray plate d arranged in sequence from top to bottom; two light-through hole conduits 28 are provided on the first spray plate a; the positions of the light-through hole conduits 28 correspond to the temperature measurement viewing windows 21 at the top of the intake chamber 2, and two radiation thermometers 20 are provided above the temperature measurement viewing windows 21, and each radiation thermometer 20 corresponds to one light-through hole conduit 28 respectively; two light-through hole conduits 28 corresponding to the light-through hole conduits 28 on the first spray plate a and a spray head 29 are provided on the second spray plate b; two light-through hole conduits 28 corresponding to the light-through hole conduits 28 on the first spray plate a and two spray heads 29 are provided on the third spray plate c, and one of the spray heads 29 corresponds to one of the spray heads 29 on the second spray plate b; four stepped holes 31 are provided on the fourth spray plate d; the stepped holes 31 respectively correspond to the light-through hole conduits 28 and the two spray heads 29 on the third spray plate c; and an annular air flow channel 30 is provided between the inner side walls of the stepped holes 31 and the outer side walls of the light-through hole conduits 28 and the two spray heads 29. In a further embodiment, more than two spray heads 29 are provided on the second spray plate b, and in addition to the spray heads 29 corresponding to the more than two spray heads 29 on the second spray plate b on the third spray plate c, more spray heads 29 are provided, and the number of stepped holes 31 on the fourth spray plate d is the sum of the number of spray heads 29 and the number of light-through hole conduits 28 on the third spray plate c.

[0030] The intake layer is, from top to bottom, a temperature measurement protection layer 36, a first intake layer 37, a second intake layer 38, and an isolation intake layer 39. The temperature measurement protection layer 36 is located above the first spray plate a, the first intake layer 37 is located between the first spray plate a and the second spray plate b, the second intake layer 38 is located between the second spray plate b and the third spray plate c, and the isolation intake layer 39 is located between the third spray plate c and the fourth spray plate d.

[0031] The protective gas can be hydrogen or argon. The protective gas enters from the temperature measurement protection layer 36 and the isolation intake layer 39 respectively, the silicon source enters from the first intake layer 37, and the carbon source enters from the second intake layer 38. The protective gas in the temperature measurement protection layer 36 enters the reaction chamber 3 through the light-through hole conduits 28, the silicon source penetrates through the spray heads 29 on the second spray plate b and the third spray plate c and enters the reaction chamber 3, the carbon source penetrates through the spray heads 29 on the third spray plate c and enters the reaction chamber 3, and the protective gas in the isolation intake layer 39 enters the reaction chamber 3 through the annular air flow channel 30.

[0032] The air inlet 23 is communicated with the gas source 24, and an air path control valve 25 and a flow meter 26 are provided between the gas source 24 and the air inlet 23. The gas source 24 stably supplies the protective gas and the reaction gas.

[0033] The exhaust port 13 is connected to the vacuum pump 17 through the exhaust pipe 14, and a shut-off valve 15 and a regulating valve 16 are provided on the exhaust pipe 14.

[0034] In a more specific embodiment, the top of the intake chamber 2 is provided with a top cover plate 1, and the temperature measurement viewing window 21 is a through hole penetrating the top cover plate 1. The upper part of the reaction chamber 3 is provided with a guiding cover 5, and a heat insulation layer 4 is provided between the guiding cover 5 and the inner wall of the reaction chamber 3. A sleeve 6 is provided in the upper middle part of the reaction chamber 3, and an upper thermal field 7 is provided between the sleeve 6 and the inner wall of the reaction chamber 3. By heating the sleeve 6 through the upper thermal field 7, the gas entering the reaction chamber 3 can be heated more uniformly. A base 11 is provided in the middle and lower part of the reaction chamber 3, a base thermal field 10 is provided on the top of the base 11, a substrate 9 is provided above the base thermal field 10, and the substrate 9 is used to support the wafer 8. The bottom of the base 11 is connected to the rotating chamber 19 through a rotating shaft 18, and the base 11 is driven to rotate by the rotating shaft 18. The bottom of the reaction chamber 3 is a reaction chamber bottom plate 12, and the exhaust port 13 is a through hole penetrating the reaction chamber bottom plate 12.

[0035] The light passing hole conduits 28 on the first spray plate a, the second spray plate b and the third spray plate c correspond to the top temperature measurement viewing window 21, and non-reactive gases such as hydrogen are introduced to ensure that there is always gas purging in the combined light passing hole conduits to ensure the smoothness of the temperature measurement optical path.

[0036] Different reaction gases are respectively introduced into the sandwich regions between the first spray plate a and the second spray plate b and between the second spray plate b and the third spray plate c and flow vertically downward through the spray heads 29.

[0037] The sandwich region between the third spray plate c and the fourth spray plate d is filled with non-reactive gases such as hydrogen as protective gases, which are uniformly ejected from the annular flow channel formed by the combination of the third spray plate c and the fourth spray plate d to avoid the mixing of the two reaction gases.

[0038] Embodiment 2:

[0039] This embodiment is an improved embodiment based on Embodiment 1. As Figures 5 to 8 shown, in this embodiment, the intake combination structure 22 further includes a fifth spray plate e provided between the first spray plate a and the second spray plate b, becoming an intake combination extended structure 32; at least one light passing hole conduit 28 corresponding to the light passing hole conduit 28 on the first spray plate a and a nozzle conduit 34 penetrating through the second spray plate b and the third spray plate c are provided on the fifth spray plate e; an air outlet flow channel is provided between the nozzle conduit 34 and the inner wall of the corresponding spray head 29. A reaction gas separation layer 40 is provided between the second spray plate b and the fifth spray plate e, and a protective gas is introduced into the reaction gas separation layer 40 to further separate the silicon source and the carbon source. A plurality of air outlet holes 33 are further provided on the fourth spray plate d to accelerate the flow rate of the reaction gas at the gas outlet end of the intake chamber 2.

[0040] A silicon source reaction gas is introduced into the interlayer region between the first spray plate a and the fifth spray plate e, a carbon source reaction gas is introduced into the interlayer region between the third spray plate c and the fourth spray plate d, and a non-reactive gas such as hydrogen is introduced into the interlayer region between the second spray plate b and the fifth spray plate e as a protective gas to prevent the mixing of the two reaction gases.

[0041] It should be noted that for those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present invention, and any reference signs in the claims should not be regarded as limiting the claims involved.

[0042] Specific examples are used in this specification to elaborate on the principles and implementation manners of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. An air intake structure applicable to a vertical film forming device, characterized in that, It includes an intake chamber, a reaction chamber, and a pedestal; the reaction chamber is disposed at the bottom of the intake chamber, and the intake chamber is in communication with the reaction chamber; the pedestal is located at the lower part inside the reaction chamber and directly below the intake chamber; the top of the pedestal is used to support a wafer; a pedestal thermal field is provided inside the pedestal, and the pedestal thermal field is used to heat the wafer; an exhaust port is provided at the bottom of the reaction chamber; a sleeve is provided inside the reaction chamber, and an upper thermal field is provided between the sleeve and the side wall of the reaction chamber. An intake combination structure is provided inside the intake chamber. The intake combination structure includes a plurality of spray plates arranged in sequence from top to bottom. An intake layer is provided between the top spray plate and the inner top wall of the intake chamber and between adjacent spray plates respectively. A plurality of intake ports are provided on the side wall of the intake chamber, and each intake layer is respectively in communication with one of the intake ports; wherein, the intake combination structure includes a first spray plate, a second spray plate, a third spray plate, and a fourth spray plate arranged in sequence from top to bottom; at least one light-transmitting hole conduit is provided on the first spray plate; the position of the light-transmitting hole conduit corresponds to the temperature-measuring viewing window at the top of the intake chamber; at least one light-transmitting hole conduit corresponding to the light-transmitting hole conduit on the first spray plate and a nozzle are provided on the second spray plate; at least one light-transmitting hole conduit corresponding to the light-transmitting hole conduit on the first spray plate and two nozzles are provided on the third spray plate, and one of the nozzles corresponds to the one nozzle on the second spray plate; a plurality of stepped holes are provided on the fourth spray plate; the stepped holes respectively correspond to the light-transmitting hole conduits and the two nozzles on the third spray plate; and an annular gas flow passage is provided between the inner side wall of the stepped hole and the outer side walls of the light-transmitting hole conduit and the two nozzles. Each intake layer is independently in communication with the reaction chamber.

2. The air intake structure applicable to a vertical film forming device according to claim 1, characterized in that, The intake combination structure further includes a fifth spray plate disposed between the first spray plate and the second spray plate; at least one light-transmitting hole conduit corresponding to the light-transmitting hole conduit on the first spray plate and a nozzle conduit penetrating through the second spray plate and the third spray plate are provided on the fifth spray plate; an air flow passage is provided between the nozzle conduit and the inner wall of the corresponding nozzle.

3. The air intake structure applicable to a vertical film forming device according to claim 2, characterized in that, A plurality of air holes are further provided on the fourth spray plate.

4. The air intake structure applicable to a vertical film forming device according to claim 1, characterized in that, The intake port is in communication with a gas source, and a gas path control valve and a flow meter are provided between the gas source and the intake port.

5. The air intake structure applicable to a vertical film forming device according to claim 1, characterized in that, The exhaust port is in communication with a vacuum pump through an exhaust pipeline, and a shut-off valve and a regulating valve are provided on the exhaust pipeline.

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