A method, apparatus and medium for correcting electron beam proximity effect

Abstract

The application discloses a method and device for correcting electron beam proximity effect and a medium, and relates to the field of electron beam lithography. In the previous method of enlarging the pattern, the sharp corners are enlarged, and the edges of the pattern are also enlarged, which leads to the distortion of the pattern. In the method of the application, only the exposure area at the position affected by the proximity effect is increased, and the position not affected by the proximity effect still coincides with the original pattern, so the shape preserving effect of the pattern is good. In the previous method of adding a compensation pattern, the edges of the pattern may be convex. In the method of the application, the finally formed area is the area surrounded by the intersection points or the vertex of the sharp corner not affected by the proximity effect and the area surrounded by the intersection points. Therefore, there is no edge convexity in the corrected target pattern, so the method provided by the application reduces the influence of the proximity effect and improves the shape preserving effect of the pattern after exposure.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electron beam lithography, and in particular to a method and device for correcting electron beam proximity effect and a medium. BACKGROUND

[0002] In the process of electron beam exposure, proximity effect can blur the exposed pattern due to the scattering of high-energy incident electrons in the electron beam resist and the backscattering on the substrate, especially when making small patterns, the influence is more prominent, that is, the influence of proximity effect can distort the pattern.

[0003] At present, in order to reduce the influence of proximity effect, the following two methods are usually used. One is to enlarge the pattern at the position where the proximity effect is obvious, and the other is to add a compensation pattern at the position where the proximity effect is obvious. Taking a diamond-shaped target pattern as an example, due to the influence of proximity effect, the sharp corners of the diamond become deformed and become rounded. When using the method of enlarging the pattern to eliminate the influence of proximity effect, the sharp corners of the diamond are lengthened. Since the deformation amount at different sharp corners is different, that is, different sharp corners need to be enlarged by different multiples according to the severity of the influence of proximity effect, and the edges of the enlarged diamond are not the same as the shape of the original diamond, the pattern is still distorted. When using the method of adding a compensation pattern to eliminate the influence of proximity effect, a compensation pattern is added at the sharp corners of the diamond, and different sizes of compensation patterns need to be added at different sharp corners according to the degree of influence of proximity effect. After adding the compensation pattern, the edges of the diamond may be raised and the like. It can be seen that the above two methods cannot effectively reduce the proximity effect, thereby improving the shape retention effect of the exposed pattern.

[0004] Therefore, it is a technical problem to be solved by those skilled in the art to provide a method for effectively reducing proximity effect and improving the shape retention effect of the exposed pattern. SUMMARY

[0005] The purpose of the present application is to provide a method and device for correcting electron beam proximity effect and a medium for reducing proximity effect and improving the shape retention effect of the exposed pattern.

[0006] To solve the above technical problems, the present application provides a method for correcting electron beam proximity effect, comprising:

[0007] obtaining a target region of a target pattern; wherein the target region is a position of the target pattern affected by proximity effect;

[0008] obtaining an arc-shaped structure added inside or outside each target region; wherein the arc-shaped structure added at the same target region is at least two;

[0009] a first target intersection point between each of the arc-shaped structures after deformation at the same target region under the influence of the proximity effect, and a second target intersection point between each of the arc-shaped structures after deformation and the target pattern at the target region;

[0010] In a case where all of the target regions are all sharp corners of the target pattern, a first region surrounded by the first target intersection point and the second target intersection point is obtained, and the target pattern is corrected according to the first region;

[0011] In a case where all of the target regions are part of the sharp corners of the target pattern, a second region surrounded by a vertex of the sharp corner not affected by the proximity effect, the first target intersection point, and the second target intersection point is obtained, and the target pattern is corrected according to the second region.

[0012] Preferably, the arc-shaped structures added inside or outside each of the target regions include:

[0013] a shape of the sharp corner of the target region is obtained;

[0014] In a case where the sharp corner of the target region is a convex corner, the arc-shaped structure added outside the target region is obtained;

[0015] In a case where the sharp corner of the target region is a concave corner, the arc-shaped structure added inside the target region is obtained.

[0016] Preferably, a number, a size, and a position of the arc-shaped structure inside or outside the target region are determined according to an influence of an electron beam proximity effect of an electron beam lithography machine; and the arc-shaped structure is at least any one of a circle, an arc, and a sector.

[0017] Preferably, the arc-shaped structure is two, and is a first arc and a second arc; the first target intersection point between each of the arc-shaped structures after deformation at the same target region under the influence of the proximity effect includes:

[0018] In a case where the first arc after deformation and the second arc after deformation are tangent to each other under the influence of the proximity effect, a tangent point of the first arc after deformation and the second arc after deformation is obtained as the first target intersection point;

[0019] In a case where the deformed first arc and the deformed second arc intersect after being affected by the proximity effect, one of two intersection points of the deformed first arc and the deformed second arc is obtained as the first target intersection point, wherein the first target intersection point is determined according to a position of the target region in the target graph and a shape of the sharp corner of the target region.

[0020] Preferably, the first target intersection point is determined according to a position of the target region in the target graph and a shape of the sharp corner of the target region includes:

[0021] In a case where the target region is located above the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is a lower intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0022] In a case where the target region is located below the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is an upper intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0023] In a case where the target region is located to the left of the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is a right intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0024] In a case where the target region is located to the right of the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is a left intersection point of the two intersection points of the deformed first arc and the deformed second arc.

[0025] Preferably, the first target intersection point is determined according to a position of the target region in the target graph and a shape of the sharp corner of the target region includes:

[0026] In a case where the target region is located above the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is an upper intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0027] In a case where the target region is located below the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is a lower intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0028] In a case that the target region is located at a left side of the target pattern and the sharp corner of the target region is a concave corner, the first target intersection point is a left intersection point of two intersection points of the first arc after deformation and the second arc after deformation.

[0029] In a case that the target region is located at a right side of the target pattern and the sharp corner of the target region is a concave corner, the first target intersection point is a right intersection point of two intersection points of the first arc after deformation and the second arc after deformation.

[0030] Preferably, in a case that the electron beam lithography machine is a JBX-9500FS model, the arc structure is a circle.

[0031] To solve the above technical problems, the present application also provides an electron beam proximity effect correction device, comprising:

[0032] A first obtaining module is configured to obtain a target region of a target pattern; wherein the target region is a position of the target pattern affected by a proximity effect;

[0033] A second obtaining module is configured to obtain an arc structure added inside or outside each target region; wherein the arc structure added at a same target region is at least two;

[0034] A third obtaining module is configured to obtain a first target intersection point between each arc structure after deformation at a same target region affected by the proximity effect, and a second target intersection point between each arc structure after deformation at the target region and the target pattern;

[0035] A fourth obtaining module is configured to obtain a first region surrounded by the first target intersection point and the second target intersection point in a case that all the target regions are all sharp corners of the target pattern; and correct the target pattern according to the first region;

[0036] A fifth obtaining module is configured to obtain a second region surrounded by a vertex of a sharp corner not affected by the proximity effect, the first target intersection point and the second target intersection point in a case that all the target regions are part of the sharp corners of the target pattern; and correct the target pattern according to the second region.

[0037] To solve the above technical problems, the present application also provides an electron beam proximity effect correction device, comprising:

[0038] A memory is configured to store a computer program;

[0039] A processor is configured to execute the computer program to realize steps of the above-mentioned electron beam proximity effect correction method.

[0040] To solve the above technical problems, the application further provides a computer readable storage medium, and the computer readable storage medium stores a computer program, and the computer program is executed by a processor to implement the steps of the above-mentioned electron beam proximity effect correction method.

[0041] The electron beam proximity effect correction method provided by the application comprises: obtaining a target region of a target pattern; wherein the target region is a position of the target pattern affected by the proximity effect; obtaining an arc structure added inside or outside each target region; wherein the arc structures added at the same target region are at least two; obtaining a first target intersection between each arc structure after deformation at the same target region affected by the proximity effect, and a second target intersection between each arc structure after deformation at the target region and the target pattern; in the case that all target regions are all sharp corners of the target pattern, obtaining a first region surrounded by all first target intersections and second target intersections; correcting the target pattern according to the first region; in the case that all target regions are part of the sharp corners of the target pattern, obtaining a second region surrounded by the vertex of the sharp corner not affected by the proximity effect, the first target intersection and the second target intersection; and correcting the target pattern according to the second region. In the previous method of enlarging the pattern, the enlargement of the sharp corner will also cause the enlargement of the edge of the pattern, resulting in the distortion of the pattern. In the method of the application, only the exposure area is added at the position affected by the proximity effect, and the position not affected by the proximity effect will not change, i.e., the position not affected by the proximity effect still coincides with the original pattern, so the shape preserving effect of the pattern is good. In the previous method of adding a compensation pattern, the edge of the pattern may be convex. In the method of the application, the region formed finally is a region surrounded by the intersections or a region surrounded by the vertex of the sharp corner not affected by the proximity effect and the intersections, and thus, there is no convex edge in the corrected target pattern, so the method provided by the application reduces the influence of the proximity effect and improves the shape preserving effect of the pattern after exposure.

[0042] In addition, the application further provides an electron beam proximity effect correction device and a computer readable storage medium, which have the same or corresponding technical features as the above-mentioned electron beam proximity effect correction method, and the effects are the same. BRIEF DESCRIPTION OF DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the application, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the application, and those skilled in the art can obtain other drawings according to these drawings without creating any creative labor.

[0044] Figure 1a A schematic diagram of a target pattern without proximity effect;

[0045] Figure 1b A schematic diagram of a target pattern with proximity effect;

[0046] Figure 1c A schematic diagram of a target pattern after using an enlarged pattern;

[0047] Figure 1d A schematic diagram of a target pattern after using an increased compensation pattern;

[0048] Figure 2 A flowchart of a method for correcting electron beam proximity effect according to an embodiment of the present application;

[0049] Figure 3a A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which circle 1 and circle 2 are tangent to each other;

[0050] Figure 3b A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which circle 1 and circle 2 intersect each other;

[0051] Figure 3c A schematic diagram of a target pattern with proximity effect according to another embodiment of the present application, in which circle 1 and circle 2 are tangent to each other;

[0052] Figure 3d A schematic diagram of a target pattern with proximity effect according to yet another embodiment of the present application, in which circle 1 and circle 2 are tangent to each other;

[0053] Figure 3e A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which circle 1 and circle 2 intersect each other and intersect a rhombus;

[0054] Figure 4a A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which each corner of a rhombus is compensated by two circles respectively;

[0055] Figure 4b A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which each corner of a rhombus is compensated by two circles respectively;

[0056] Figure 5a A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which each corner of a rhombus is compensated by two circles respectively;

[0057] Figure 5b A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which each corner of a rhombus is compensated by two circles respectively;

[0058] Figure 5c A schematic diagram of a target pattern with proximity effect according to an embodiment of the present application, in which each corner of a rhombus is compensated by two circles respectively;

[0059] Figure 5d a schematic diagram of a target pattern with a concave corner after compensation provided for an embodiment of the present application;

[0060] Figure 6 a structural diagram of a device for correcting electron beam proximity effect provided for an embodiment of the present application;

[0061] Figure 7 a structural diagram of a device for correcting electron beam proximity effect provided for another embodiment of the present application. DETAILED DESCRIPTION

[0062] The technical solutions in the embodiments of the present application will be clearly and completely described with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0063] The core of the present application is to provide a method, device and medium for correcting electron beam proximity effect, for reducing proximity effect, thereby improving the shape retention effect of the exposed pattern.

[0064] In the process of electron beam exposure, an effect that high-energy incident electrons scatter in the electron beam resist and backscatter on the substrate, resulting in non-target area exposure of the pattern, proximity effect will blur the exposed pattern, especially when making small patterns, the influence is more prominent. In the case of using positive resist, taking a diamond-shaped target pattern as an example, the diamond is a non-exposed area, and the non-exposed area is before the rectangle and the diamond, Figure 1a a schematic diagram of a target pattern without proximity effect, Figure 1b a schematic diagram of a target pattern affected by proximity effect, for comparison Figure 1a and Figure 1b It can be found that after the influence of proximity effect, the sharp corners of the diamond will become rounded corners, wherein the upper and lower acute angles have a larger deformation due to smaller size, i.e., a larger curvature radius of the chamfer.

[0065] In order to correct proximity effect, the following two methods are usually used. One is to enlarge the pattern, and the other is to add a compensation pattern in the area where proximity effect is serious. Figure 1c a schematic diagram of a target pattern after using the method of enlarging the pattern. As Figure 1cIt can be found that in the position where the proximity effect is obvious, for example, the upper and lower corners are stretched more, and the left and right corners are stretched less, so as to increase the size of the target area in the layout, thereby reducing the influence of the proximity effect. However, there are two risks in using the direct magnification pattern to reduce the proximity effect: the proximity effect is different in different positions, so it is necessary to select the position where the proximity effect is serious to increase the magnification, and the position where the proximity effect is slight to reduce the magnification. For example, the rhombus in Figure 1c is stretched more at the upper and lower sharp corners, and less at the left and right sharp corners. The edges of the rhombus do not coincide with the edges of the target pattern, resulting in distortion. Secondly, if the edges of the rhombus coincide with the edges of the target rhombus, that is, the pattern is scaled proportionally, the elimination effect of the proximity effect on the upper and lower corners and the left and right corners cannot be guaranteed at the same time. Figure 1d is a schematic diagram of the target pattern after using the compensation pattern. The compensation pattern is added in the area where the proximity effect is serious, that is, the four small rhombus areas in Figure 1d . Similarly, the size of the area where the proximity effect is serious is artificially increased, so as to reduce the influence of the proximity effect. The problem of adding the compensation pattern is that the precision control is not enough. The smaller the size of the area, the more serious the proximity effect, and the shape of the compensation pattern needs to be finely adjusted. However, the influence of the compensation pattern on the proximity effect in the actual exposure process cannot be accurately calculated in the small size range. For example, Figure 1d , the compensation pattern at the upper and lower sharp corners may cause the edges of the rhombus to protrude and the like. Therefore, in the present application, the shape of the exposure area of the layout is adjusted, the arc structure is increased, and the proximity effect is used to make the curvature radius of the sharp corner of the exposed pattern significantly reduced.

[0066] In order for those skilled in the art to better understand the scheme of the present application, the present application will be further described in detail below in combination with the drawings and specific embodiments. Figure 2 is a flowchart of an electron beam proximity effect correction method provided by an embodiment of the present application, as shown in Figure 2 , the method comprises the following steps.

[0067] S10: Obtain a target area of a target pattern; wherein the target area is a position in the target pattern affected by the proximity effect.

[0068] S11: Obtain an arc structure added inside or outside each target area; wherein the arc structure added at the same target area is at least two.

[0069] S12: Obtain a first target intersection between each arc structure after deformation at the same target area affected by the proximity effect, and a second target intersection between each arc structure after deformation at the target area and the target pattern.

[0070] S13: judging whether all the target regions are all the sharp corners of the target pattern; if yes, going to step S14; if no, going to step S15;

[0071] S14: obtaining a first region surrounded by the first target intersection and the second target intersection; correcting the target pattern according to the first region;

[0072] S15: obtaining a second region surrounded by the vertex of the sharp corner not affected by the proximity effect, the first target intersection and the second target intersection; correcting the target pattern according to the second region.

[0073] When using positive glue, the electron beam is not exposed at the target region, and the electron beam is exposed at the non-target region. The non-exposed region is the diamond region in the above Figure 1a Figure 1b Figure 1c Figure 1d The exposed region and the non-exposed region when using negative glue are exactly opposite to the exposed region and the non-exposed region in Figure 1a Figure 1b Figure 1c Figure 1d The shape of the target pattern is not limited, and is determined according to the actual situation. Since there is interference between adjacent electron beams during exposure, the region affected by the proximity effect in the target pattern is referred to as the target region in the embodiment. The specific target region is determined according to the actual situation. The region most easily affected by the proximity effect is usually the sharp corner of the target region, which causes the sharp corner to deform and the curvature radius of the chamfer to be larger. For example, the target pattern is a diamond, and the target region of the target pattern is the four sharp corners of the diamond.

[0074] In practice, obtaining the arc structure added inside or outside each target region includes: obtaining the shape of the sharp corner of the target region; in the case that the sharp corner of the target region is a convex corner, obtaining the arc structure added outside the target region; in the case that the sharp corner of the target region is a concave corner, obtaining the arc structure added inside the target region. The number, size and position of the arc structure inside or outside the target region are determined according to the influence of the electron beam proximity effect of the electron beam lithography machine; the arc structure is at least any one of a circle, an arch and a sector. Since the proximity effect between the arc structures is utilized, the number of the arc structures is at least two. Taking the diamond as an example, the diamond is a sharp corner structure, and therefore, in order to reduce the influence of the proximity effect, at least two arc structures are added outside the diamond. It should be noted that the influence of the electron beam proximity effect of the electron beam lithography machine is obtained according to experience. For example, in the case that the electron beam lithography machine is a JBX-9500FS model, the preferred arc structure is a circle.​​​​​​

[0075] The first target intersection between the deformed arc-shaped structures at the same target region after being affected by the proximity effect and the second target intersection between the deformed arc-shaped structures and the target pattern at the target region are obtained. It should be noted that, after being affected by the proximity effect, there can be multiple intersections between the deformed arc-shaped structures at the same target region, and in order to select a suitable first target intersection, the position of the target region in the target pattern and the shape of the sharp corner of the target region can be determined; there can be multiple intersections between each deformed arc-shaped structure at the target region and the target pattern at the target region, and in a preferred embodiment, the point closest to the corresponding first target intersection among all the intersections is selected as the second target intersection.

[0076] If all the sharp corners of the target pattern are affected by the proximity effect, the region surrounded by all the first target intersections and all the second target intersections is taken as the corrected target pattern. Starting from one target intersection (referring to the first target intersection or the second intersection), all the target intersections can be connected in a clockwise or counterclockwise direction to obtain the region surrounded by all the target intersections; if part of the sharp corners of the target pattern are affected by the proximity effect, the second region surrounded by the vertex of the sharp corner not affected by the proximity effect, the first target intersection and the second target intersection is taken as the corrected target pattern. Starting from one point (referring to the vertex of the sharp corner not affected by the proximity effect, the first target intersection or the second target intersection), all the points can be connected in a clockwise or counterclockwise direction to obtain the region surrounded by all the points.

[0077] The method for correcting the electron beam proximity effect provided in the embodiment comprises: obtaining a target region of a target pattern; wherein the target region is a position of the target pattern affected by the proximity effect; obtaining arc structures added inside or outside each target region; wherein there are at least two arc structures added at the same target region; obtaining a first target intersection point between each arc structure after deformation at the same target region affected by the proximity effect, and a second target intersection point between each arc structure after deformation and the target pattern at the target region; in the case that all the target regions are all sharp corners of the target pattern, obtaining a first region surrounded by all the first target intersection points and the second target intersection points; correcting the target pattern according to the first region; in the case that all the target regions are part of the sharp corners of the target pattern, obtaining a second region surrounded by the vertex of the sharp corner not affected by the proximity effect, the first target intersection point and the second target intersection point; and correcting the target pattern according to the second region. In the previous method for reducing the proximity effect by enlarging the pattern, the pattern is also enlarged when the sharp corner is enlarged, which leads to the distortion of the pattern. In the method of the present application, only the exposure region is added at the position affected by the proximity effect, and the position not affected by the proximity effect remains unchanged, i.e., the position not affected by the proximity effect still coincides with the original pattern, so the shape preserving effect of the pattern is good. In the previous method for reducing the proximity effect by adding a compensation pattern, the edges of the pattern may be raised. In the method of the present embodiment, the region finally formed is a region surrounded by the intersection points or a region surrounded by the vertex of the sharp corner not affected by the proximity effect and the intersection points, so that there is no edge raising in the corrected target pattern. Therefore, the method provided in the present embodiment reduces the influence of the proximity effect while improving the shape preserving effect of the pattern after exposure.

[0078] On the basis of the above-mentioned embodiments, in order to conveniently and quickly preserve the shape of the pattern, preferably, the arc structures are two, and are a first arc and a second arc; obtaining the first target intersection point between each arc structure after deformation at the same target region affected by the proximity effect comprises:

[0079] In the case that the first arc after deformation and the second arc after deformation are tangent to each other after being affected by the proximity effect, obtaining the tangent point of the first arc after deformation and the second arc after deformation as the first target intersection point;

[0080] In the case that the first arc after deformation and the second arc after deformation intersect with each other after being affected by the proximity effect, obtaining one of the two intersection points of the first arc after deformation and the second arc after deformation as the first target intersection point; wherein the first target intersection point is determined according to the position of the target region in the target pattern and the shape of the sharp corner of the target region.

[0081] Similarly, with the target shape being a rhombus, two additional arc structures are added, namely circle 1 and circle 2. Figure 3a This is a schematic diagram showing that circles 1 and 2 are tangent after being affected by the proximity effect, as provided in an embodiment of this application. Figure 3b This is a schematic diagram illustrating the intersection of circle 1 and circle 2 after being affected by the proximity effect, as provided in an embodiment of this application. Figure 3a , Figure 3b In the diagram, the dashed lines represent the positions of circles 1 and 2 before deformation, while the solid lines represent their positions after being affected by the proximity effect. The positions and sizes of circles 1 and 2 are determined based on the influence of the electron beam proximity effect in electron beam lithography. Figure 3a In the diagram, point a, the point of tangency between circle 1 and circle 2, is the intersection point of the first target; as shown... Figure 3b In the case of circle 1 and circle 2, there are two intersection points. One of the intersection points is selected as the first target intersection point. When choosing one of the two intersection points as the first target intersection point, the preferred implementation is to determine it based on the position of the sharp corner in the rhombus and the shape of the sharp corner.

[0082] It should be noted that, Figure 3a and Figure 3b The example selected two circles of the same size, whose centers may not lie on the same straight line. In reality, the circles can be of different sizes, and their centers may not lie on the same horizontal or vertical line. Taking two tangent circles as an example... Figure 3c To illustrate another embodiment of this application, circle 1 and circle 2 are tangent after being affected by the proximity effect, as shown in the diagram. Figure 3c As shown, the two circles have different radii; Figure 3d This application provides another schematic diagram showing that circles 1 and 2 are tangent after being affected by the proximity effect, as shown in the embodiment. Figure 3d As shown, the centers of circle 1 and circle 2 are not on the same horizontal or vertical line.

[0083] In addition, the second target intersection point can be the point where circle 1 and circle 2 are tangent to the rhombus, or it can be the point where circle 1 and circle 2 intersect the rhombus. Figure 3a , 3b In 3c and 3d, the intersection points b and c of circles 1 and 2 with the rhombus are the intersection points of the second target, respectively. Figure 3e This is a schematic diagram showing that, after being affected by the proximity effect, circles 1 and 2 intersect and also intersect with a rhombus, with the second target intersection points being points b and c.

[0084] by Figure 3a Taking the first and second target intersection points determined in the diagram as an example, the process of preserving the shape of the entire rhombus is explained. For each corner of the rhombus, the corresponding first and second target intersection points are determined. Figure 4a This is a schematic diagram illustrating how two circles compensate for each corner of a rhombus, as provided in an embodiment of this application. Figure 4aAs shown, four sets of points are obtained: a1, b1, c1; a2, b2, c2; a3, b3, c3; a4, b4, c4. Connect arc a1b1, line segment b1c3, arc c3a3, arc a3b3, line segment b3c2, arc c2a2, arc a2b2, line segment b2c4, arc c4a4, arc a4b4, line segment b4c1, and arc c1a1 to obtain the adjusted shape, as shown. Figure 4b As shown, Figure 4b This is a schematic diagram of a compensated rhombus shape provided in an embodiment of this application. For positive rubber, Figure 4b The area inside the shape enclosed by all line segments and arcs is the non-exposed area. In practice, the external exposure area can be increased based on the period of the shape and other actual conditions. For example, in the process of forming a grating using multiple rhombus structures, the above method can be used to compensate for each rhombus.

[0085] This embodiment selects two arc-shaped structures. Compared with using more than two arc-shaped structures, it is possible to quickly find the intersection point between the arc-shaped structures and select a suitable intersection point, thereby reducing the influence of the proximity effect more quickly.

[0086] When curved structures intersect due to the proximity effect, in order to select a suitable first target intersection point, the preferred implementation method is to determine the first target intersection point based on the position of the target region in the target graphic and the shape of the sharp corner of the target region, including:

[0087] When the target area is above the target graphic and the sharp corner of the target area is a convex corner, the first target intersection point is the lower intersection point of the two intersection points of the deformed first arc and the deformed second arc.

[0088] When the target area is located below the target graphic and the sharp corner of the target area is a convex corner, the first target intersection point is the upper intersection point of the two intersection points of the deformed first arc and the deformed second arc.

[0089] When the target area is located to the left of the target graphic and the sharp corner of the target area is a convex corner, the first target intersection point is the right intersection point of the two intersection points of the deformed first arc and the deformed second arc.

[0090] When the target area is located to the right of the target graphic and the sharp corner of the target area is a convex corner, the first target intersection point is the left intersection point of the two intersection points of the deformed first arc and the deformed second arc.

[0091] by Figure 3b For example, when the target area is above the target graphic and the sharp corner of the target area is a convex corner, the first target intersection point is the lower intersection point of the two intersection points of the deformed first arc and the deformed second arc. Figure 3bThe sharp corner shown in the middle is located above the rhombus and is a convex corner, and the first target intersection point is the lower intersection point a.

[0092] The method for determining the first target intersection point according to the position of the target region in the target graph and the shape of the sharp corner of the target region provided in this embodiment enables appropriate compensation of the deformed graph.

[0093] The method for determining the first target intersection point in the case of a convex sharp corner is described in the above embodiments, and the method for determining the first target intersection point in the case of a concave sharp corner is described in this embodiment, which preferably comprises:

[0094] In the case where the target region is located above the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is the upper intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0095] In the case where the target region is located below the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is the lower intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0096] In the case where the target region is located to the left of the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is the left intersection point of the two intersection points of the deformed first arc and the deformed second arc;

[0097] In the case where the target region is located to the right of the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is the right intersection point of the two intersection points of the deformed first arc and the deformed second arc.

[0098] Figure 5a A schematic diagram of a target graph containing concave and convex corners is provided for the embodiments of the present application. First, the positions and sizes of circles 1 and 2 are determined according to the positions and sizes of the concave corners, Figure 5b A schematic diagram of the compensation of the deformed graph at the concave corner is provided for the embodiments of the present application. Due to the proximity effect, the positions close to circles 1 and 2 will be deformed after exposure, and the actual exposure area becomes the area enclosed by arc 1 and arc 2 (solid line). This area may be in a tangent state or an intersection state depending on the actual situation, as shown in Figure 5b The first target intersection point is a. Arc 1 and arc 2 will be tangent or intersected with the target graph, and the second target intersection points are b and c. Repeat the above steps for each concave corner to obtain two groups of points: a1, b1, c1; a2, b2, c2, Figure 5c A schematic diagram of compensating two circles for all concave corners is provided for the embodiments of the present application, Figure 5dThe compensated schematic diagram of the target pattern containing the concave corner is provided in the embodiment. P1-P6 are the vertices of the target pattern. The line segment P1P2, the line segment P2B1, the arc B1A1, the arc A1C1, the line segment C1P3, the line segment P3P4, the line segment P4P5, the line segment P5C2, the arc C2A2, the arc A2B2, the line segment B2P6 and the line segment P6P1 are connected to obtain the adjusted pattern for the left and right two concave corners. For the positive glue, the outside of the area is the exposure area. It should be noted that the adjustment of the concave corner does not affect the adjustment of the convex corner, that is, the adjustment of the concave corner and the convex corner can be completed in the same pattern.

[0099] By adjusting the shape of the exposure area of the layout, increasing the structure such as circle, arc and sector, and using the proximity effect, the curvature radius of the sharp corner of the exposed pattern is significantly reduced. The shape of the sharp corner position affected by the proximity effect after exposure is improved, and the shape retention capability of the exposed pattern is improved. In addition, for different degrees of proximity effect, only the size and position of the increased structure need to be adjusted, and complex modification of the layout is not required. In practice, the size and position of the increased structure can be optimized, the areas with insignificant proximity effect can be avoided, local processing is realized, and the overall shape retention effect is achieved.

[0100] In the above embodiment, the correction method of the electron beam proximity effect is described in detail, and the application also provides an embodiment of the correction device of the electron beam proximity effect. It should be noted that the embodiments of the device part are described from two angles, one is based on the functional module, and the other is based on the hardware.

[0101] Figure 6 The structure diagram of the correction device of the electron beam proximity effect provided for an embodiment of the application. The embodiment is based on the functional module and includes:

[0102] The first acquisition module 10 is configured to acquire a target region of a target pattern. The target region is a position of the target pattern affected by the proximity effect.

[0103] The second acquisition module 11 is configured to acquire an arc structure increased in the inside or outside of each target region. The arc structure increased in the same target region is at least two.

[0104] The third acquisition module 12 is configured to acquire a first target intersection between the deformed arc structures in the same target region affected by the proximity effect, and a second target intersection between the deformed arc structures in the target region and the target pattern.

[0105] The judgment module 13 is configured to judge whether all the target regions are all sharp corners of the target pattern. If yes, the fourth acquisition module 14 is triggered, and if no, the fifth acquisition module 15 is triggered.

[0106] The fourth obtaining module 14 is configured to obtain a first region enclosed by the first target intersection point and the second target intersection point; and correct the target pattern according to the first region.

[0107] The fifth obtaining module 15 is configured to obtain a second region enclosed by the vertex of the sharp corner, the first target intersection point and the second target intersection point, which is not affected by the proximity effect; and correct the target pattern according to the second region.

[0108] Since the embodiments of the device part correspond to the embodiments of the method part, the embodiments of the device part are described in the description of the embodiments of the method part, which are not described here. The same beneficial effects as the above-mentioned electron beam proximity effect correction method are achieved.

[0109] Figure 7 The structural diagram of the electron beam proximity effect correction device provided by another embodiment of the present application is shown in the figure. The present embodiment is based on the hardware angle, as shown in the figure, the electron beam proximity effect correction device comprises: Figure 7

[0110] The memory 20 is configured to store a computer program.

[0111] The processor 21 is configured to implement the steps of the above-mentioned electron beam proximity effect correction method when executing the computer program.

[0112] The processor 21 can include one or more processing cores, such as a 4-core processor, an 8-core processor, etc. The processor 21 can be implemented in at least one of a hardware form of a digital signal processor (DSP), a field-programmable gate array (FPGA), a programmable logic array (PLA). The processor 21 can also include a main processor and a coprocessor, the main processor is a processor for processing data in the wake-up state, also known as a central processing unit (CPU); the coprocessor is a low-power processor for processing data in the standby state. In some embodiments, the processor 21 can be integrated with a graphics processor (GPU) for rendering and drawing the content to be displayed by the display screen. In some embodiments, the processor 21 can also include an artificial intelligence (AI) processor for processing machine learning-related computing operations.

[0113] ​The memory 20 can include one or more computer-readable storage media that can be non-transitory. The memory 20 can also include high-speed random access memory and nonvolatile, computer-readable storage media such as one or more magnetic disk storage devices, flash memory devices. In this embodiment, the memory 20 is at least used to store the following computer program 201, wherein the computer program is loaded and executed by the processor 21, and can realize the related steps of the electron beam proximity effect correction method disclosed in any of the foregoing embodiments. In addition, the resources stored by the memory 20 can also include an operating system 202 and data 203, etc., and the storage mode can be temporary storage or permanent storage. The operating system 202 can include Windows, Unix, Linux, etc. The data 203 can include but is not limited to the data involved in the electron beam proximity effect correction method mentioned above.

[0114] In some embodiments, the electron beam proximity effect correction device can also include a display screen 22, an input / output interface 23, a communication interface 24, a power supply 25, and a communication bus 26.

[0115] Those skilled in the art can understand that the structure shown in the above-mentioned embodiments does not constitute a limitation on the electron beam proximity effect correction device, and can include more or fewer components than those shown in the drawings. Figure 7

[0116] The electron beam proximity effect correction device provided by the embodiments of the present application includes a memory and a processor, and the processor can realize the following method when executing the program stored in the memory: the electron beam proximity effect correction method, and the effect is the same as above.

[0117] Finally, the present application also provides an embodiment of a computer-readable storage medium. The computer-readable storage medium stores a computer program, and the computer program is executed by the processor to realize the steps recorded in the above-mentioned method embodiments.

[0118] It can be understood that if the method in the above-mentioned embodiments is realized in the form of a software function unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such understanding, the technical solutions of the present application essentially or the part that contributes to the prior art or the whole or part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and executes all or part of the steps of the methods described in the embodiments of the present application. The foregoing storage medium includes: a U disk, a mobile hard disk, a read-only memory (Read-Only Memory, ROM), a random access memory (Random Access Memory, RAM), a magnetic disk or an optical disk, and various media that can store program codes. ​

[0119] The computer readable storage medium provided by the present application includes the above-mentioned correction method of electron beam proximity effect, and the effects are the same.

[0120] The above describes in detail the electronic beam proximity effect correction method, device and medium provided by the present application. The embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts of each embodiment can be referred to each other. For the device disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple, and the related parts can be referred to the method part. It should be pointed out that for ordinary skilled in the art, without departing from the principles of the present application, the present application can be improved and modified, and these improvements and modifications also fall within the protection scope of the claims of the present application.

[0121] It should also be noted that in the present specification, the relationship terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A method of correcting electron beam proximity effect, characterized by, The method comprises the following steps: obtaining target regions of a target pattern; wherein the target regions are positions of the target pattern affected by proximity effect; obtaining arc structures added inside or outside each of the target regions; wherein the arc structures added at the same target region are at least two; obtaining a first target intersection between each of the arc structures after deformation at the same target region affected by the proximity effect and a second target intersection between each of the arc structures after deformation at the target region and the target pattern; in the case that all of the target regions are all sharp corners of the target pattern, obtaining a first region surrounded by the first target intersection and the second target intersection; and correcting the target pattern according to the first region; in the case that all of the target regions are part of sharp corners of the target pattern, obtaining a second region surrounded by a vertex of the sharp corner not affected by the proximity effect, the first target intersection and the second target intersection; and correcting the target pattern according to the second region.

2. The method of claim 1, wherein, The step of obtaining the arc structures added inside or outside each of the target regions comprises the following steps: obtaining a shape of the sharp corner of the target region; in the case that the sharp corner of the target region is a convex corner, obtaining the arc structures added outside the target region; in the case that the sharp corner of the target region is a concave corner, obtaining the arc structures added inside the target region.

3. The method of claim 1, wherein, The number, size and position of the arc structures inside or outside the target region are determined according to the influence of the electron beam proximity effect of an electron beam lithography machine; and the arc structures are at least any one of a circle, an arc and a sector.

4. The method of claim 1, wherein, The arc structures are two, and are a first arc and a second arc; and the step of obtaining the first target intersection between each of the arc structures after deformation at the same target region affected by the proximity effect comprises the following steps: in the case that the first arc after deformation and the second arc after deformation are tangent to each other after being affected by the proximity effect, obtaining a tangent point of the first arc after deformation and the second arc after deformation as the first target intersection; in the case that the first arc after deformation and the second arc after deformation intersect with each other after being affected by the proximity effect, obtaining one of two intersection points of the first arc after deformation and the second arc after deformation as the first target intersection; wherein the first target intersection is determined according to the position of the target region in the target pattern and the shape of the sharp corner of the target region.

5. The method of claim 4, wherein the beam proximity effect is corrected by: The step of determining the first target intersection according to the position of the target region in the target pattern and the shape of the sharp corner of the target region comprises the following steps: in the case that the target region is above the target pattern and the sharp corner of the target region is a convex corner, the first target intersection is a lower intersection point of the two intersection points of the first arc after deformation and the second arc after deformation. In a case where the target region is below the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is an upper intersection point of two intersection points of the deformed first arc and the deformed second arc; In a case where the target region is left of the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is a right intersection point of two intersection points of the deformed first arc and the deformed second arc; In a case where the target region is right of the target graph and the sharp corner of the target region is a convex corner, the first target intersection point is a left intersection point of two intersection points of the deformed first arc and the deformed second arc.

6. The method of claim 4 or 5, wherein, The first target intersection point is determined according to a position of the target region in the target graph and a shape of the sharp corner of the target region, and includes: In a case where the target region is above the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is an upper intersection point of two intersection points of the deformed first arc and the deformed second arc; In a case where the target region is below the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is a lower intersection point of two intersection points of the deformed first arc and the deformed second arc; In a case where the target region is left of the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is a left intersection point of two intersection points of the deformed first arc and the deformed second arc; In a case where the target region is right of the target graph and the sharp corner of the target region is a concave corner, the first target intersection point is a right intersection point of two intersection points of the deformed first arc and the deformed second arc.

7. The method of claim 3, wherein the beam proximity effect is corrected by: In a case where the electron beam lithography machine is a JBX-9500FS model, the arc structure is a circle.

8. An apparatus for correcting electron beam proximity effect, characterized by, The method comprises: a first obtaining module, configured to obtain a target region of a target graph, wherein the target region is a position of the target graph affected by a proximity effect; a second obtaining module, configured to obtain an arc structure added inside or outside each target region, wherein the arc structure added at a same target region is at least two; a third obtaining module, configured to obtain a first target intersection point between each deformed arc structure at a same target region after being affected by the proximity effect, and a second target intersection point between each deformed arc structure at the target region and the target graph; a fourth obtaining module, configured to obtain a first region surrounded by the first target intersection point and the second target intersection point in a case where all the target regions are all sharp corners of the target graph, and correct the target graph according to the first region. A fifth obtaining module, configured to, in a case where all the target regions are part of sharp corners of the target graph, obtain a second region surrounded by a vertex of the sharp corner not affected by the proximity effect, the first target intersection and the second target intersection; and correct the target graph according to the second region.

9. An apparatus for correcting electron beam proximity effect, characterized by, The computer program is stored in the computer readable storage medium and includes a step of implementing the method for correcting the proximity effect of the electron beam according to any one of claims 1 to 7. The computer readable storage medium stores a computer program, and the computer program is executed by the processor to implement the steps of the method for correcting the proximity effect of the electron beam according to any one of claims 1 to 7. The computer readable storage medium stores a computer program, and the computer program is executed by the processor to implement the steps of the method for correcting the proximity effect of the electron beam according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, ​

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