A semiconductor laser control system

Abstract

The application relates to the field of semiconductor laser control, in particular to a semiconductor laser control system which can provide 3-way voltage-controlled voltage source module outputs and 4-way voltage-controlled current source module outputs, has multiple voltage and current output combinations, can drive different types of lasers through upper computer control, the voltage-controlled voltage source and the voltage-controlled current source in the design are relatively independent, the size and frequency of each voltage and current can be controlled individually, through specific processing circuits, the voltage-controlled voltage source and the voltage-controlled current source have the characteristics of continuous output and good output synchronization, and the microprocessor control module with a high-performance DSP operation processor as the core can control the current value of each voltage-controlled current source and the voltage value of each voltage-controlled voltage source through table lookup calculation, so that the semiconductor laser can be controlled to realize nanosecond-level fast wavelength tuning.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser control, and particularly to a semiconductor laser control system. Background Technology

[0002] Semiconductor lasers, with their advantages of compact structure, high beam quality, long lifespan, and stable performance, are making great strides in fields such as communications, materials processing and manufacturing, military, and medicine. Laser equipment has a wide range of applications. Particularly in Optical Coherence Tomography (OCT), as a key optoelectronic device, the performance of semiconductor lasers directly affects the core technical indicators of the OCT system, such as imaging resolution and detectable cross-sectional depth.

[0003] The four-segment wide-tunable fast-sweep semiconductor laser comprises: a semiconductor optical amplifier (SOA), two passive cavity regions A, a laser region B, a phase adjustment region C, and a power amplification region D. While achieving an ultra-wide sweep range for the laser chip, it still maintains a sufficiently small dynamic linewidth and a sufficiently high side-mode rejection ratio. By changing the injection current in the power amplification region D, the output power can be further increased. Therefore, the four-segment wide-tunable fast-sweep semiconductor laser can provide a high-performance laser source and application system environment for next-generation OCT systems.

[0004] Currently, the tuning principles of tunable semiconductor lasers are mainly divided into three types: voltage / current tuning, temperature tuning, and mechanical tuning. The four-segment wide-tunable, fast-sweep semiconductor laser uses voltage / current tuning. Wavelength adjustment is achieved by changing the bias voltage of the reverse PN junction in the two passive cavity regions A. When the applied voltage changes, it affects the carrier accumulation density at the reverse-biased PN junction, thereby adjusting the refractive index of the material in passive cavity region A, thus obtaining a tunable comb reflection spectrum. The lengths of the two passive cavity regions A can be different, resulting in a slight difference in the peak-to-peak value of the comb reflection spectrum, which can generate a vernier effect, providing single-longitudinal-mode feedback for the laser in laser region B. By changing the voltage of the two passive cavity regions A separately, and utilizing the vernier effect, wide-range tuning and fast frequency sweeping of the laser can be achieved. The working principle of the phase adjustment region C is the same as that of the passive cavity regions A at both ends. By changing the voltage applied to both ends of the adjustment region C, the overall phase of the middle part is adjusted so that the wavelength peak of the lasing wavelength can be aligned with the lasing wavelength peak selected by the passive cavity regions A at both ends through the vernier effect, thereby reducing the laser beam width.

[0005] However, existing tunable laser control systems have low and unstable wavelength control accuracy, and cannot meet the functional requirements of a four-segment wide-tunable fast-sweep semiconductor laser. They cannot simultaneously provide three independent voltage sources to control two passive cavity regions A and one phase adjustment region C, three independent current sources to control power amplifier D, laser region B, and semiconductor optical amplifier unit SOA, plus one semiconductor cooling chip control module. The market urgently needs to solve this problem. Summary of the Invention

[0006] In view of this, this embodiment of the invention provides a semiconductor laser control system that enables nanosecond-level rapid wavelength tuning.

[0007] The semiconductor laser control system provided in this embodiment of the invention includes a microprocessor control module, multiple independent DAC conversion modules, multiple independent voltage-controlled voltage source modules, multiple independent voltage-controlled current source modules, multiple independent ADC conversion modules, multiple independent voltage acquisition modules, multiple independent current acquisition modules, a temperature sampling feedback module, and a communication module.

[0008] The microprocessor control module communicates with the host computer through the communication module, receives control commands from the host computer to control the semiconductor laser, and transmits the working data information of the semiconductor laser back to the host computer. The semiconductor laser includes a first passive cavity region, a second passive cavity region, a phase adjustment region, a laser region, a power amplifier, and a semiconductor optical amplification unit.

[0009] The DAC conversion module is used to divide the voltage into a target number of analog voltages according to the control instructions of the microprocessor control module. The analog voltages are used to control the voltage-controlled voltage source module or the voltage-controlled current source module of the semiconductor laser.

[0010] The voltage-controlled voltage source module is used to change the output voltage according to different input voltage signals, and to control the passive cavity region and phase adjustment region of the semiconductor laser using the output voltage.

[0011] The voltage-controlled current source module is used to change the output current according to the different input voltage signals, and the output current is used to control the power amplifier, laser region and semiconductor optical amplification unit of the semiconductor laser.

[0012] The ADC conversion module is used to convert the voltage signals and current signals acquired by the voltage acquisition module and the current acquisition module into a target number of digital signals, and send the digital signals to the microprocessor control module;

[0013] The current acquisition module is used to acquire the current signal of the circuit and convert the current signal into a voltage signal and transmit it to the ADC conversion module.

[0014] The voltage acquisition module is used to acquire the voltage signal of the circuit and transmit the voltage signal to the ADC conversion module;

[0015] The temperature sampling feedback module is electrically connected to the microprocessor control module and is used to monitor the temperature of the semiconductor laser.

[0016] The communication module is used for communication between the microprocessor control module and the host computer.

[0017] As an optional solution, the multi-channel independent DAC conversion module includes seven independent DAC conversion modules, namely a first DAC conversion module, a second DAC conversion module, a third DAC conversion module, a fourth DAC conversion module, a fifth DAC conversion module, a sixth DAC conversion module, and a seventh DAC conversion module;

[0018] The multi-channel independent voltage-controlled voltage source module includes three independent voltage-controlled voltage source modules, namely a first voltage-controlled voltage source module, a second voltage-controlled voltage source module, and a third voltage-controlled voltage source module;

[0019] The multi-channel independent voltage-controlled current source module consists of three independent voltage-controlled current source modules: the first voltage-controlled current source module, the second voltage-controlled current source module, and the third voltage-controlled current source module.

[0020] The multi-channel independent ADC conversion module includes seven independent ADC conversion modules, namely the first ADC conversion module, the second ADC conversion module, the third ADC conversion module, the fourth ADC conversion module, the fifth ADC conversion module, the sixth ADC conversion module, and the seventh ADC conversion module;

[0021] The multi-channel independent voltage acquisition module consists of three independent voltage acquisition modules: a first voltage acquisition module, a second voltage acquisition module, and a third voltage acquisition module.

[0022] The multi-channel independent current acquisition module consists of four independent current acquisition modules: a first current acquisition module, a second current acquisition module, a third current acquisition module, and a fourth current acquisition module.

[0023] As an optional solution, the first DAC conversion module is connected to the semiconductor optical amplifier unit through the first voltage-controlled current source module, and the first analog voltage signal output by the first DAC conversion module controls the first voltage-controlled current source module to output a first tuning current signal to tune the semiconductor optical amplifier unit;

[0024] The second DAC conversion module is connected to the power amplifier through the second voltage-controlled current source module. The second analog voltage signal output by the second DAC conversion module controls the second voltage-controlled current source module to output a second tuning current signal to tune the power amplifier.

[0025] The third DAC conversion module is connected to the first passive cavity region through the first voltage-controlled voltage source module. The third analog voltage signal output by the third DAC conversion module controls the first voltage-controlled voltage source module to output a first tuning voltage signal to tune the first passive cavity region.

[0026] The fourth DAC conversion module is connected to the laser region through the third voltage-controlled current source module, and the fourth analog voltage signal output by the fourth DAC conversion module controls the third voltage-controlled current source module to output a third tuning current signal to tune the laser region;

[0027] The fifth DAC conversion module is connected to the phase adjustment region through the second voltage-controlled voltage source module, and the fifth analog voltage signal output by the fifth DAC conversion module controls the second voltage-controlled voltage source module to output a second tuning voltage signal to tune the phase adjustment region;

[0028] The sixth DAC conversion module is connected to the second passive cavity region through the third voltage-controlled voltage source module. The sixth analog voltage signal output by the sixth DAC conversion module controls the third tuning voltage signal output by the third voltage-controlled voltage source module to tune the second passive cavity region.

[0029] As an optional solution, the microprocessor control module controls the first voltage-controlled current source to output a first current through the first DAC conversion module, the first current acquisition module acquires the first current output by the first voltage-controlled current source and transmits the acquired first current signal to the first ADC conversion module, and the first current acquisition module and the first ADC conversion module convert the first current signal into a first digital signal and transmit it to the microprocessor control module.

[0030] The microprocessor control module controls the second voltage-controlled current source to output a second current through the second DAC conversion module. The second current acquisition module acquires the second current output by the second voltage-controlled current source and transmits the acquired second current signal to the second ADC conversion module. The second current acquisition module and the second ADC conversion module convert the second current signal into a second digital signal and transmit it to the microprocessor control module.

[0031] The microprocessor control module controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module. The first voltage acquisition module acquires the first voltage output by the first voltage-controlled voltage source and transmits the acquired first voltage signal to the third ADC conversion module. The first voltage acquisition module and the third ADC conversion module convert the first voltage signal into a third digital signal and transmit it to the microprocessor control module.

[0032] The microprocessor control module controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module. The third current acquisition module acquires the third current output by the third voltage-controlled current source and transmits the acquired third current signal to the fourth ADC conversion module. The third current acquisition module and the fourth ADC conversion module convert the third current signal into a fourth digital signal and transmit it to the microprocessor control module.

[0033] The microprocessor control module controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module. The second voltage acquisition module acquires the second voltage output by the second voltage-controlled voltage source and transmits the acquired second voltage signal to the fifth ADC conversion module. The second voltage acquisition module and the fifth ADC conversion module convert the second voltage signal into a fifth digital signal and transmit it to the microprocessor control module.

[0034] The microprocessor control module controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module. The third voltage acquisition module acquires the third voltage output by the third voltage-controlled voltage source and transmits the acquired third voltage signal to the sixth ADC conversion module. The third voltage acquisition module and the sixth ADC conversion module convert the third voltage signal into a sixth digital signal and transmit it to the microprocessor control module.

[0035] As an optional solution, the system further includes a thermistor for acquiring the temperature of the semiconductor laser, a thermoelectric cooler for adjusting the temperature of the semiconductor laser, and a thermoelectric cooling control module for controlling the operation of the thermoelectric cooler. The seventh DAC conversion module is electrically connected to the thermoelectric cooler through the thermoelectric cooling control module. The fourth current acquisition module is electrically connected to the thermoelectric cooler. The seventh ADC conversion module acquires the cooling control current of the thermoelectric cooler through the fourth current acquisition module. The thermistor is integrated with the semiconductor laser and the thermoelectric cooler. The microprocessor control module obtains the temperature of the thermistor through the temperature sampling feedback module. The temperature sampling feedback module acquires the die temperature of the semiconductor laser through the thermistor and feeds back the measured temperature value to the microprocessor control module. The microprocessor control module controls the voltage-controlled current source module to adjust the cooling control current of the thermoelectric cooler to regulate the cooling efficiency based on the measured temperature value.

[0036] As an optional solution, it also includes a data storage module for storing control data of the control system and a heat dissipation module for dissipating heat from the control system and maintaining it in a constant temperature operating environment. The data storage module and the heat dissipation module are electrically connected to the microprocessor control module, respectively.

[0037] As an optional solution, the semiconductor cooling control module includes an H-bridge drive circuit, which is electrically connected to the semiconductor cooling chip. The cooling efficiency of the semiconductor cooling chip is controlled by the power supply current of the H-bridge drive circuit controlled by the seventh DAC conversion module.

[0038] As an optional solution, the heat dissipation module is an air-cooled radiator, which includes a fan, heat sink, and heat pipes.

[0039] As an optional solution, the microprocessor control module includes a PGA programmable logic controller or an ARM processor.

[0040] As an alternative, the semiconductor laser is a four-segment wide-tunable fast-sweep semiconductor laser.

[0041] The semiconductor laser control system provided in this embodiment of the invention can provide three voltage-controlled voltage source module outputs and four voltage-controlled current source module outputs, with various voltage and current output combinations. It can drive different types of lasers through the control of the host computer 9. The voltage-controlled voltage source and voltage-controlled current source in the design are relatively independent, and the magnitude and frequency of each voltage and current can be controlled individually. Through a specific processing circuit, it can achieve continuous output of voltage and current and good output synchronization. The microprocessor control module with a high-performance DSP computing processor as the core can control the current value of each voltage-controlled current source and the voltage value of the voltage-controlled voltage source through table lookup calculation, and can control the semiconductor laser to achieve nanosecond-level fast wavelength tuning. Attached Figure Description

[0042] Figure 1 This is a structural block diagram of a semiconductor laser control system provided in an embodiment of the present invention;

[0043] Figure 2 This is a schematic diagram of the structure of a temperature sampling feedback module in a semiconductor laser control system provided in an embodiment of the present invention;

[0044] Figure 3 This is a schematic diagram of the closed-loop temperature control function of a semiconductor cooler in a semiconductor laser control system provided in an embodiment of the present invention.

[0045] Figure reference numerals: 1. Microprocessor control module; 2. Temperature sampling feedback module; 3. Communication module; 4. Thermistor; 5. Semiconductor cooling chip; 6. Semiconductor cooling control module; 7. Data storage module; 8. Heat dissipation module; 9. Host computer; 211. Wheatstone bridge circuit; 212. Instrumentation amplifier circuit; 213. ADC conversion circuit; 214. Proportional-integral circuit.

[0046] First passive cavity region 11, second passive cavity region 12, phase adjustment region 13, laser region 14, power amplifier 15, semiconductor optical amplification unit 16;

[0047] First DAC conversion module 21, second DAC conversion module 22, third DAC conversion module 23, fourth DAC conversion module 24, fifth DAC conversion module 25, sixth DAC conversion module 26, and seventh DAC conversion module 27;

[0048] First voltage-controlled voltage source module 31, second voltage-controlled voltage source module 32, third voltage-controlled voltage source module 33;

[0049] First voltage-controlled current source module 41, second voltage-controlled current source module 42, third voltage-controlled current source module 43;

[0050] First ADC conversion module 51, second ADC conversion module 52, third ADC conversion module 53, fourth ADC conversion module 54, fifth ADC conversion module 55, sixth ADC conversion module 56, and seventh ADC conversion module 57;

[0051] First voltage acquisition module 61, second voltage acquisition module 62, third voltage acquisition module 63;

[0052] First current acquisition module 71, second current acquisition module 72, third current acquisition module 73, and fourth current acquisition module 74. Detailed Implementation

[0053] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0054] The terms "first," "second," "third," "fourth," etc., used in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0055] The semiconductor laser control system provided in this embodiment of the invention includes a microprocessor control module 1, multiple independent DAC conversion modules, multiple independent voltage-controlled voltage source modules, multiple independent voltage-controlled current source modules, multiple independent ADC conversion modules, multiple independent voltage acquisition modules, multiple independent current acquisition modules, a temperature sampling feedback module 2, and a communication module 3.

[0056] The microprocessor control module 1 communicates with the host computer 9 through the communication module 3, receives control commands from the host computer 9 to control the semiconductor laser, and transmits the working data information of the semiconductor laser back to the host computer 9. The microprocessor control module 1 may include an FPGA programmable logic controller or an ARM processor and related auxiliary circuits, and has powerful DSP computing capabilities. The control commands for controlling the operation of the semiconductor laser may include adjusting the laser output power, adjusting the laser output phase, adjusting the laser output wavelength, controlling the cooling temperature of the semiconductor cooler 5, etc., without limitation.

[0057] In this embodiment, the semiconductor laser may include a first passive cavity region 11, a second passive cavity region 12, a phase adjustment region 13, a laser region 14, a power amplifier 15, and a semiconductor optical amplification unit 16. However, it should be noted that this control system does not include the semiconductor laser. It is only mentioned here for the convenience of explaining the connection and control relationship of the various components of the control system, and will not be elaborated on below.

[0058] The DAC conversion module is used to divide the voltage into a target number of analog voltages according to the control instructions of the microprocessor control module 1. These analog voltages are used to control the voltage-controlled voltage source module or voltage-controlled current source module of the semiconductor laser. The DAC conversion module can be a high-frequency DAC converter. Specifically, when controlling a four-segment semiconductor laser, seven independent DAC conversion modules can be selected, with a target number of 2... 14 That is, 16384. The 7-channel independent DAC conversion module can include a DAC conversion chip of more than 14 bits and its peripheral circuits and EMC filter circuits. It can divide 0 to 3.3V (or 0 to 5.5V) into no less than 16384 analog voltages according to the instructions of the microprocessor control module 1. The output analog voltage is used to control the voltage-controlled voltage source module or the voltage-controlled current source module.

[0059] The voltage-controlled voltage source module is used to change the output voltage according to the different input voltage signals, and to control the first passive cavity region 11, the second passive cavity region 12, and the phase adjustment region 13 of the semiconductor laser using the output voltage. The voltage-controlled voltage source module may include a precision operational amplifier circuit, a negative feedback circuit composed of precision resistors, a MOS transistor output circuit, and an acceleration circuit.

[0060] The voltage-controlled current source module is used to change the output current according to the different input voltage signals. The output current is used to control the power amplifier 15, laser area 14 and semiconductor optical amplification unit 16 of the semiconductor laser. The voltage-controlled current source module may include a precision operational amplifier circuit, a negative feedback circuit composed of precision resistors, a MOS transistor output circuit and an acceleration circuit.

[0061] The ADC conversion module is used to convert the voltage signals and current signals acquired by the voltage acquisition module and the current acquisition module into a target number of digital signals, and send the digital signals to the microprocessor control module 1. The ADC conversion module can be a high-frequency converter. Specifically, the ADC conversion module can include a 14-bit or higher ADC conversion chip, peripheral circuits, and integrated operational amplifier circuits. The target number is 2. 14 That is, 16384, which converts the voltage and current signals acquired by the voltage acquisition module and the current acquisition module into digital signals of 0 to 16384, and sends the digital signals to the microprocessor control module 1.

[0062] The current acquisition module is used to acquire the current signal of the circuit and convert the current signal into a voltage signal and transmit it to the ADC conversion module. Specifically, the current acquisition module may include a precision sampling resistor, a voltage follower, a differential operational amplifier, an instrumentation amplifier, and an adder.

[0063] The voltage acquisition module is used to acquire the voltage signal of the circuit and transmit the voltage signal to the ADC conversion module. The voltage acquisition module may include a voltage follower, a differential operational amplifier, an instrumentation amplifier, and an adder.

[0064] Combination Figure 2 As shown, the temperature sampling feedback module 2 is electrically connected to the microprocessor control module 1 and is used to monitor the temperature of the semiconductor laser. The temperature sampling feedback module 2 may include a Wheatstone bridge circuit 211, an instrumentation amplifier circuit 212, a proportional-integral circuit 214, an ADC conversion circuit 213, and an EMC filter circuit (not shown in the figure).

[0065] The communication module 3 is used for communication between the microprocessor control module 1 and the host computer 9. The communication module 3 can be a connector that transmits different signals, including communication networks that convert RS-232, RS-422 / 485 signals, so as to make the serial messages of the drive, control and actuation components in the system architecture compatible. Those skilled in the art can flexibly choose according to the needs of the application scenario, and there is no limitation.

[0066] The host computer 9 is a computer that can directly issue control commands, which facilitates the staff to control and manage the control system. An industrial computer can be used, and there are no restrictions on this.

[0067] Combination Figure 1As shown in the embodiments of the present invention, the semiconductor laser control system, taking a four-segment wide-tunable fast-sweep semiconductor laser as an example, can have the following configurations for each device to meet control requirements. Specifically, the multi-channel independent DAC conversion module includes seven independent DAC conversion modules, namely, the first DAC conversion module 21, the second DAC conversion module 22, the third DAC conversion module 23, the fourth DAC conversion module 24, the fifth DAC conversion module 25, the sixth DAC conversion module 26, and the seventh DAC conversion module 27. The multi-channel independent voltage-controlled voltage source module includes three independent voltage-controlled voltage source modules, namely, the first voltage-controlled voltage source module 31, the second voltage-controlled voltage source module 32, and the third voltage-controlled voltage source module 33. The multi-channel independent voltage-controlled current source module consists of three independent voltage-controlled current source modules. The modules are a first voltage-controlled current source module 41, a second voltage-controlled current source module 42, and a third voltage-controlled current source module 43. The multi-channel independent ADC conversion module includes seven independent ADC conversion modules: a first ADC conversion module 51, a second ADC conversion module 52, a third ADC conversion module 53, a fourth ADC conversion module 54, a fifth ADC conversion module 55, a sixth ADC conversion module 56, and a seventh ADC conversion module 57. The multi-channel independent voltage acquisition module consists of three independent voltage acquisition modules: a first voltage acquisition module 61, a second voltage acquisition module 62, and a third voltage acquisition module 63. The multi-channel independent current acquisition module consists of four independent current acquisition modules: a first current acquisition module 71, a second current acquisition module 72, a third current acquisition module 73, and a fourth current acquisition module 74.

[0068] In some embodiments, the first DAC conversion module 21 is connected to the semiconductor optical amplifier unit 16 via the first voltage-controlled current source module 41. The first analog voltage signal output by the first DAC conversion module 21 controls the first voltage-controlled current source module 41 to output a first tuning current signal to tune the semiconductor optical amplifier unit 16. The second DAC conversion module 22 is connected to the power amplifier 15 via the second voltage-controlled current source module 42. The second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal to tune the power amplifier 15. The third DAC conversion module 23 is connected to the first passive cavity region 11 via the first voltage-controlled voltage source module 31. The third analog voltage signal output by the third DAC conversion module 23 controls the first voltage-controlled voltage source module 31 to output a first tuning voltage signal to tune the first passive cavity region 11. A passive cavity region 11 is included. The fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43. The fourth analog voltage signal output by the fourth DAC conversion module 24 controls the third voltage-controlled current source module 43 to output a third tuning current signal to tune the laser region 14. The fifth DAC conversion module 25 is connected to the phase adjustment region 13 through the second voltage-controlled voltage source module 32. The fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal to tune the phase adjustment region. The sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage-controlled voltage source module 33. The sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage-controlled voltage source module 33 to output a third tuning voltage signal to tune the second passive cavity region 12.

[0069] In some embodiments, the microprocessor control module 1 controls the first voltage-controlled current source to output a first current through the first DAC conversion module 21. The first current acquisition module 71 acquires the first current output by the first voltage-controlled current source and transmits the acquired first current signal to the first ADC conversion module 51. The first current acquisition module 71 and the first ADC conversion module 51 convert the first current signal into a first digital signal and transmit it to the microprocessor control module 1. The microprocessor control module 1 controls the second voltage-controlled current source to output a second current through the second DAC conversion module 22. The second current acquisition module 72 acquires the second current output by the second voltage-controlled current source. The acquired second current signal is transmitted to the second ADC conversion module 52. The second current acquisition module 72 and the second ADC conversion module 52 convert the second current signal into a second digital signal and transmit it to the microprocessor control module 1. The microprocessor control module 1 controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module 23. The first voltage acquisition module 61 acquires the first voltage output by the first voltage-controlled voltage source and transmits the acquired first voltage signal to the third ADC conversion module 53. The first voltage acquisition module 61 and the third ADC conversion module 53 convert the first voltage signal into a third digital signal and transmit it to the microprocessor control module 1. Module 1, the microprocessor control module 1 controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module 24. The third current acquisition module 73 acquires the third current output by the third voltage-controlled current source and transmits the acquired third current signal to the fourth ADC conversion module 54. The third current acquisition module 73 and the fourth ADC conversion module 54 convert the third current signal into a fourth digital signal and transmit it to the microprocessor control module 1. The microprocessor control module 1 controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module 25. The second voltage acquisition module 62 acquires the second voltage output by the second voltage-controlled voltage source and transmits the acquired signal to the fourth ADC conversion module 54. The obtained second voltage signal is transmitted to the fifth ADC conversion module 55. The second voltage acquisition module 62 and the fifth ADC conversion module 55 convert the second voltage signal into a fifth digital signal and transmit it to the microprocessor control module 1. The microprocessor control module 1 controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module 26. The third voltage acquisition module 63 acquires the third voltage output by the third voltage-controlled voltage source and transmits the acquired third voltage signal to the sixth ADC conversion module 56. The third voltage acquisition module 63 and the sixth ADC conversion module 56 convert the third voltage signal into a sixth digital signal and transmit it to the microprocessor control module 1.

[0070] Combination Figure 3 As shown, in some embodiments, the system further includes a thermistor 4 for acquiring the temperature of the semiconductor laser, a thermoelectric cooler 5 for adjusting the temperature of the semiconductor laser, and a thermoelectric cooler control module 6 for controlling the operation of the thermoelectric cooler 5. The thermoelectric cooler control module 6 is used to adjust the cooling power of the thermoelectric cooler 5 according to the instructions of the microprocessor control module 1. The seventh DAC conversion module 27 is electrically connected to the thermoelectric cooler 5 through the thermoelectric cooler control module 6. The fourth current acquisition module 74 is electrically connected to the thermoelectric cooler 5. The seventh ADC conversion module 57 is connected to the thermoelectric cooler 5 through the... The fourth current acquisition module 74 acquires the cooling control current of the semiconductor cooling chip 5. The thermistor 4 is packaged with the semiconductor laser and the semiconductor cooling chip 5 as a single unit. The microprocessor control module 1 obtains the temperature of the thermistor 4 through the temperature sampling feedback module 2. The temperature sampling feedback module 2 acquires the die temperature of the semiconductor laser through the thermistor 4 and feeds back the measured temperature value to the microprocessor control module 1. The microprocessor control module 1 controls the voltage-controlled current source module to adjust the cooling control current of the semiconductor cooling chip 5 to regulate the cooling efficiency based on the measured temperature value.

[0071] In some embodiments, the semiconductor cooling control module 6 includes an H-bridge drive circuit, which is electrically connected to the semiconductor cooling chip 5. The H-bridge drive circuit provides output current through a voltage-controlled current source module and output voltage through a voltage-controlled voltage source module. The seventh DAC conversion module 27 controls the power supply current of the H-bridge drive circuit to control the cooling efficiency of the semiconductor cooling chip 5.

[0072] In some embodiments, the semiconductor laser control system further includes a data storage module 7 for storing control data of the control system and a heat dissipation module 8 for dissipating heat from the control system and maintaining it in a constant temperature working environment. The data storage module 7 and the heat dissipation module 8 are electrically connected to the microprocessor control module 1. In this embodiment, the data storage module 7 can be a FLASH memory. Those skilled in the art can choose flexibly, and there is no limitation on this.

[0073] In some embodiments, the heat dissipation module 8 is an air-cooled radiator, which may include a fan, heat sink, and heat pipes. Those skilled in the art can choose flexibly, and there is no limitation thereto.

[0074] Example 1

[0075] When the semiconductor laser control system provided in this embodiment of the invention records the relationship between current, voltage combination and output wavelength and power, it can perform the following operations.

[0076] The microprocessor control module 1 changes the current of the voltage-controlled current source module and the voltage of the voltage-controlled voltage source module through the DAC conversion module, thereby controlling the two passive cavity regions, phase adjustment region 13, laser region 14, power amplifier 15, and semiconductor optical amplification unit 16 of the four-segment laser. Specifically, the first DAC conversion module 21 is connected to the semiconductor optical amplification unit 16 through the first voltage-controlled current source module 41. The first analog voltage signal output by the first DAC conversion module 21 controls the first voltage-controlled current source module 41 to output a first tuning current signal to tune the semiconductor optical amplification unit. The second DAC conversion module 22 is connected to the power amplifier 15 through the second voltage-controlled current source module 42. The second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal to tune the power amplifier 15. The third DAC conversion module 23 is connected to the first passive cavity region 11 through the first voltage-controlled voltage source module 31. The third analog voltage signal output by the conversion module 23 controls the first voltage-controlled voltage source module 31 to output a first tuning voltage signal to tune the first passive cavity region 11. The fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43. The fourth analog voltage signal output by the fourth DAC conversion module 24 controls the third voltage-controlled current source module 43 to output a third tuning current signal to tune the laser region 14. The fifth DAC conversion module 25 is connected to the phase adjustment region 13 through the second voltage-controlled voltage source module 32. The fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal to tune the phase adjustment region 13. The sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage-controlled voltage source module 33. The sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage-controlled voltage source module 33 to output a third tuning voltage signal to tune the second passive cavity region 12.

[0077] The current values ​​are represented by 14-bit AD values, with each current adjustment range from 100 to 16000. The voltage values ​​are represented by 14-bit AD values, with each voltage adjustment range from 100 to 16000. The voltage steps for the two passive cavity regions are 50, the voltage steps for phase adjustment region 13 are 50, the injection current steps for laser region 14 are 50, the injection current steps for power amplifier 15D are 50, and the injection current steps for semiconductor optical amplifier unit 16 are 50. In this step, the voltage or current of any five control regions is fixed in turn, while the other current or voltage value increases sequentially from small to large. When the voltage or current values ​​of the control regions of any five DAC conversion modules are fixed, and the voltage or current value of the other voltage or current changes gradually, the corresponding laser output wavelength exhibits repetitive and abrupt jumps. There are multiple combinations of voltage or current for each control region corresponding to the same wavelength and power. Organize and analyze the data, and record the output wavelength and power values ​​of the laser corresponding to each combination of current and voltage in ascending order of wavelength and power. For the same wavelength and power combination, only one corresponding combination of data is taken.

[0078] Example 2

[0079] The semiconductor laser control system provided in this embodiment of the invention has an output power calibration function, and the following operations can be performed when calibrating the output current and voltage of the control system.

[0080] When the semiconductor laser is connected to the semiconductor laser control system and the calibration function is activated, the microprocessor control module 1 controls the output current of the first voltage-controlled current source module 41 through the first DAC conversion module 21. The first current acquisition module 71 acquires the current output by the first voltage-controlled current source module 41 and transmits the signal to the first ADC conversion module 51. The first current acquisition module 71 and the first ADC conversion module 51 convert the current signal into a digital signal and transmit it to the microprocessor control module 1.

[0081] The value transmitted from the first ADC conversion module 51 to the microprocessor control module 1 is used to calibrate the current output of the first voltage-controlled current source module 41. For example, the DAC conversion chip in the first DAC conversion module 21 is 14-bit, with an output voltage of 0-5V and a resolution of 0.3mV. That is, when the microcontroller outputs 0 to the first DAC conversion module 21, the first DAC conversion module 21 outputs 0V to the first voltage-controlled current source module 41; when the microcontroller outputs 1 to the first DAC conversion module 21, the first DAC conversion module 21 outputs 0.3mV to the first voltage-controlled current source module 41. The measurement range of the first ADC conversion module 51 is 0-100mA, and the ADC conversion chip is 14-bit (i.e., 2... 14 The resolution is 100 ÷ 16384 = 0.0061 mA.

[0082] When the microprocessor control module 1 outputs X to the first DAC conversion module 21, the first ADC conversion module 51 outputs 16 to the microprocessor control module 1 (16 + 0.0061 = 0.0976 ≈

[0083] At this point, the calibration program of the microprocessor control module 1 considers that when the microprocessor control module 1 outputs X to the first DAC conversion module 21, the output of the first voltage-controlled current source module 41 is 0.1mA. Similarly, starting from 0mA until the maximum current of the semiconductor optical amplifier unit 16, the output current of the first voltage-controlled current source module 41 is calibrated in 0.1mA increments.

[0084] The microprocessor control module 1 controls the output voltage of the first voltage-controlled voltage source module 31 through the third DAC conversion module 23. The first voltage acquisition module 61 acquires the voltage output of the first voltage-controlled voltage source module 31 and transmits the signal to the third ADC conversion module 53. The third voltage acquisition module 63 and the third ADC conversion module 53 convert the voltage signal into a digital signal and transmit it to the microprocessor control module 1. For example, the DAC conversion chip in the third DAC conversion module 23 is 16-bit (65536), the output voltage value is 0-5V, and the resolution is 5+1000÷6536=0.076mV. That is, when the microprocessor module outputs 0 to the third DAC conversion module 23, the third DAC conversion module 23 outputs 0V to the first voltage-controlled voltage source module 31; when the microprocessor module outputs 1 to the third DAC conversion module 23, the third DAC conversion module 23 outputs 0.076mV to the first voltage-controlled voltage source module. The third ADC conversion module 53 has a measurement range of 0-5V. The ADC conversion chip is 16-bit (65536) with a resolution of 5 + 1000 ÷ 65536 = 0.076mV. When the microprocessor control module 1 outputs X to the third DAC conversion module 23, and the third DAC conversion module 23 outputs 13 to the microprocessor control module 1 (13 + 0.076 = 0.988 ≈ 1mV), the calibration program of the microprocessor control module 1 assumes that when the microprocessor control module 1 outputs X to the third DAC conversion module 23, the third voltage-controlled voltage source module 33 outputs 1mV. Similarly, starting from 0V until the maximum current in the second passive cavity region 12, the output voltage of the voltage-controlled voltage source 1 is calibrated in 1mV increments.

[0085] It is understandable that the output current values ​​of the second voltage-controlled current source module 42, the third voltage-controlled current source module 43, and the semiconductor cooling control module 6 are calibrated in the same way as the first voltage-controlled current source, and the output voltage values ​​of the second voltage-controlled voltage source and the third voltage-controlled voltage source are calibrated in the same way as the first voltage-controlled voltage source. This will not be repeated here.

[0086] Example 3

[0087] The semiconductor laser control system provided in this embodiment of the invention can perform the following operations when displaying the output current, voltage, and power of each channel.

[0088] Referring to Example 2, the semiconductor laser control system includes a current acquisition module, a voltage acquisition module, and an ADC conversion module. These modules can acquire the output current values ​​of each voltage transformer current source, the output voltage values ​​of each voltage transformer voltage source, and the output current value of the semiconductor cooling control module 6. In static output or low-speed frequency sweep operation, the current acquisition module, voltage acquisition module, and ADC conversion module can acquire the output current values ​​of each voltage transformer current source, the output voltage values ​​of each voltage transformer voltage source, and the output current value of the semiconductor laser control module in real time and feed the data back to the host computer 9 operating system. In high-speed frequency sweep operation, the real-time acquisition by the current acquisition module, voltage acquisition module, and ADC conversion module will affect the frequency sweep speed; in this case, the current and voltage acquisition functions are disabled. The output current values ​​of each voltage transformer current source module, the output voltage values ​​of the voltage transformer voltage source module, and the output current value of the semiconductor cooling control module 6 will be fed back to the host computer 9 with values ​​calibrated according to Example 2. Of course, to ensure the accuracy of the feedback data, a calibration of the output current and voltage according to Example 2 can be performed before high-speed frequency sweep operation; this will not be repeated here.

[0089] Example 3

[0090] The semiconductor laser control system provided in this embodiment of the invention can perform the following operations when calibrating the temperature of the semiconductor laser.

[0091] Currently, most semiconductor lasers use a thermistor 4 as a temperature sensor to monitor the laser's temperature. The thermistor 4 is packaged together with the semiconductor cooler 5 and the semiconductor laser. The temperature sampling feedback module 2 of the semiconductor laser control system of this invention operates on the principle that the thermistor 4 in the semiconductor laser, along with other precision resistors, forms a Wheatstone bridge circuit 211. When the temperature of the semiconductor laser changes, the resistance of the thermistor 4 changes, causing a change in the potential of the Wheatstone bridge circuit 211. The potential change signal is amplified by an instrumentation amplifier circuit, a proportional-integral circuit, and an ADC conversion circuit, becoming a digital signal between 0 and 4096. The temperature sampling feedback module 2 acquires the voltage signal and converts it into a 12-bit digital signal corresponding to 0-4096. To achieve precise temperature control, a table relating the voltage signal to the measured temperature can be pre-established.

[0092] During the calibration of thermistor 4, to avoid abnormal temperature measurement during laser operation, the calibration range of thermistor 4 must be greater than the storage temperature range of the semiconductor laser. Thermistor 4 is connected to the semiconductor control system via wires. Thermistor 4 is placed in a constant temperature chamber with the temperature set to the minimum measurement temperature. After holding at this temperature for half an hour, the temperature is measured. The value displayed in the system at this time is a value between 0 and 4096. This value is then correlated with the current measured temperature. The temperature of the constant temperature chamber is increased by 1°C and held at this temperature for another half hour. The measurement process is repeated, and the correspondence between the measured temperature and the measured voltage is recorded. This test is repeated until the set temperature in the constant temperature chamber is greater than the upper limit of the semiconductor laser's storage temperature by 10°C, at which point the calibration ends. The interval between the measured temperature data in this data table is 1°C. When the measured data is less than the required interval, the measured temperature value is calculated using linear interpolation and rounded to the nearest 0.01°C. The compiled table of correspondence between the voltage signal and the measured temperature is stored in data storage module 7 for later use.

[0093] Example 4

[0094] The semiconductor laser control system provided in this embodiment of the invention can perform the following operations when performing closed-loop temperature control of the semiconductor cooling chip 5.

[0095] The emission wavelength of a semiconductor laser is closely related to the temperature of its die; increased temperature leads to a longer wavelength. To ensure the accuracy and repeatability of the semiconductor laser's output wavelength and to guarantee its long-term stable operation, the semiconductor laser die is packaged together with the thermistor 4 and the thermoelectric cooler 5. The temperature sampling feedback module 2 collects the die temperature of the semiconductor laser through the thermistor 4 and feeds the measured temperature value back to the microprocessor control module 1. Based on the sampled temperature, the microprocessor control module 1 performs PID calculations using an algorithm and controls the voltage transformer current source module to supply power to the H-bridge drive circuit via the seventh DAC converter module. The H-bridge drive circuit is connected to the thermoelectric cooler 5. By changing the supply current of the H-bridge drive circuit, the cooling efficiency of the thermoelectric cooler 5 is controlled, keeping the thermoelectric cooler 5 at a constant temperature.

[0096] When the system is first powered on, due to system reset and delays in the stabilization signal acquisition by thermistor 4, there is a delay of several milliseconds to several seconds in the stable acquisition data. To ensure system stability and avoid current oscillation or overshoot of the thermoelectric cooler 5, the output current of the voltage transformer current source of the thermoelectric cooler 5 is controlled to be 0 when the system is first powered on or restarted, until the system is working normally. After the temperature acquisition data of thermistor 4 stabilizes, the thermoelectric cooler 5 begins to work normally. If the thermal protection function is enabled, when the temperature acquisition feedback module acquires abnormal temperatures five times consecutively or exceeds the allowable temperature range of the laser, the microprocessor control module 1 immediately controls the output voltage of the first DAC conversion module 211 to the sixth DAC conversion module 26 to stop the external output of the voltage transformer voltage source module and the voltage transformer current source module, thus protecting the semiconductor laser. It should be noted that the thermal protection function can be turned off during the test.

[0097] Example 5

[0098] The semiconductor laser control system provided in this embodiment of the invention can perform the following operations when outputting a wide tuning wavelength.

[0099] When the semiconductor laser control system is started, the microprocessor control module 1 sends an instruction to retrieve the correspondence table between the bias voltage or current of each control area and the wavelength and power of the semiconductor laser output light stored in the data storage module 7. The correspondence table is then stored in the RAM of the microprocessor control module 1. At the same time, the temperature calibration table is retrieved. The microprocessor control module 1 communicates with the host computer 9 through the communication module 3 and receives the control instructions issued by the host computer 9. The control instructions include parameters such as the start wavelength, step wavelength, step time, and end wavelength of the four-segment laser output light.

[0100] Based on the control parameters in the received control commands and the table of current, voltage combinations, and output wavelength and power correspondence stored in RAM, the microprocessor control module 1 writes voltage or current control programs for six control modules: two passive cavity regions, one phase adjustment region 13, power amplifier 15, laser region 14, and semiconductor optical amplification unit 16. After the control programs are written, the control system begins to control the four-segment laser to emit light. The microprocessor control module 1 sends digital-to-analog conversion commands to the first DAC module 1 through the sixth DAC module via SPI communication and GPIO pins.

[0101] The first DAC conversion module 21 is connected to the semiconductor optical amplifier unit 16 via the first voltage-controlled current source module 41. The first analog voltage signal output by the first DAC conversion module 21 controls the first voltage-controlled current source module 41 to output a first tuning current signal to tune the semiconductor optical amplifier unit 16. The second DAC conversion module 22 is connected to the power amplifier 15 via the second voltage-controlled current source module 42. The second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal to tune the power amplifier 15. The third DAC conversion module 23 is connected to the first passive cavity region 11 via the first voltage-controlled voltage source module 31. The third analog voltage signal output by the third DAC conversion module 23 controls the first voltage-controlled voltage source module 31 to output a first tuning voltage signal to tune the first passive cavity region. In the body region 11, the fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43. The fourth analog voltage signal output by the fourth DAC conversion module 24 controls the third voltage-controlled current source module 43 to output a third tuning current signal to tune the laser region 14. The fifth DAC conversion module 25 is connected to the phase adjustment region 13 through the second voltage-controlled voltage source module 32. The fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal to tune the phase adjustment region 13. The sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage-controlled voltage source module 33. The sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage-controlled voltage source module 33 to output a third tuning current signal to tune the second passive cavity region 12.

[0102] The first DAC conversion module 211 to the sixth DAC conversion module 26 have a conversion rate ≥600MHz, supplemented by a specially designed integrating circuit. They can convert the step signal output from the microprocessor control module 1 into a highly linear analog voltage signal. This analog voltage signal drives a voltage-controlled current source module composed of high-speed precision operational amplifiers, enabling the output of a continuously controllable and highly accurate voltage or current. Based on the external requirements for the laser output wavelength, the microprocessor control module 1 selects six injection current or voltage values ​​corresponding to the wavelength and power, including two passive cavity regions, a phase adjustment region 13, a power amplifier 15, a laser region 14, and a semiconductor optical amplification unit 16, according to a table showing the correspondence between current / voltage combinations and output wavelength and power, thus achieving rapid wavelength tuning.

[0103] In this embodiment, the semiconductor laser is a four-segment wide-tunable fast-sweep semiconductor laser. It should be noted that the semiconductor laser control system in this embodiment can also provide backward compatibility for driving other types of lasers, such as single-segment, two-segment, and three-segment semiconductor lasers. It is only necessary that the number of voltage and current sources output by the semiconductor laser control system, as well as the output voltage and current ranges, meet the output requirements of other lasers. Connect the pins of the thermistor 4 and the semiconductor cooler 5 to the semiconductor laser control system according to the laser's requirements. Connect other current tuning signals to the voltage-controlled current source module and voltage signals to the voltage-controlled voltage source module. When connecting, ensure the power supply range is correct. The semiconductor laser control system can drive the corresponding laser to emit light via software communication with the host computer 9. If precise control of wavelength and temperature is required, refer to Embodiments 1 and 2 for laser wavelength, power, and temperature calibration.

[0104] The semiconductor laser control system provided in this embodiment of the invention can provide three voltage-controlled voltage source module outputs and four voltage-controlled current source module outputs, with various voltage and current output combinations. It can drive different types of lasers through the control of the host computer 9. The voltage-controlled voltage source and voltage-controlled current source in the design are relatively independent, and the magnitude and frequency of each voltage and current can be controlled individually. Through a specific processing circuit, it can achieve continuous output of voltage and current and good output synchronization. The microprocessor control module with a high-performance DSP computing processor as the core can control the current value of each voltage-controlled current source and the voltage value of the voltage-controlled voltage source through table lookup calculation, and can control the semiconductor laser to achieve nanosecond-level fast wavelength tuning.

[0105] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this invention can be achieved, and this is not limited herein.

[0106] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A semiconductor laser control system, characterized in that, It includes a microprocessor control module, multiple independent DAC conversion modules, multiple independent voltage-controlled voltage source modules, multiple independent voltage-controlled current source modules, multiple independent ADC conversion modules, multiple independent voltage acquisition modules, multiple independent current acquisition modules, a temperature sampling feedback module, and a communication module; The microprocessor control module communicates with the host computer through the communication module, receives control commands from the host computer to control the semiconductor laser, and transmits the working data information of the semiconductor laser back to the host computer. The semiconductor laser is a four-segment wide-tunable fast-sweep semiconductor laser, which includes a first passive cavity region, a second passive cavity region, a phase adjustment region, a laser region, a power amplifier, and a semiconductor optical amplification unit. The DAC conversion module is used to divide the voltage into a target number of analog voltages according to the control instructions of the microprocessor control module. The analog voltages are used to control the voltage-controlled voltage source module or the voltage-controlled current source module of the semiconductor laser. The voltage-controlled voltage source module is used to change the output voltage according to different input voltage signals, and to control the passive cavity region and phase adjustment region of the semiconductor laser using the output voltage. The multi-channel independent voltage-controlled voltage source module includes three independent voltage-controlled voltage source modules: a first voltage-controlled voltage source module, a second voltage-controlled voltage source module, and a third voltage-controlled voltage source module. The first voltage-controlled voltage source module outputs a first tuning voltage signal to tune the first passive cavity region; the second voltage-controlled voltage source module outputs a second tuning voltage signal to tune the phase adjustment region; and the third voltage-controlled voltage source module outputs a third tuning voltage signal to tune the second passive cavity region. The voltage-controlled current source module is used to change the output current according to the different input voltage signals, and the output current is used to control the power amplifier, laser region and semiconductor optical amplification unit of the semiconductor laser. The multi-channel independent voltage-controlled current source module consists of three independent voltage-controlled current source modules: a first voltage-controlled current source module, a second voltage-controlled current source module, and a third voltage-controlled current source module. The first voltage-controlled current source module outputs a first tuning current signal to tune the semiconductor optical amplifier unit; the second voltage-controlled current source module outputs a second tuning current signal to tune the power amplifier; and the third voltage-controlled current source module outputs a third tuning current signal to tune the laser region. The ADC conversion module is used to convert the voltage signals and current signals acquired by the voltage acquisition module and the current acquisition module into a target number of digital signals, and send the digital signals to the microprocessor control module; The current acquisition module is used to acquire the current signal of the circuit and convert the current signal into a voltage signal and transmit it to the ADC conversion module. The voltage acquisition module is used to acquire the voltage signal of the circuit and transmit the voltage signal to the ADC conversion module; The temperature sampling feedback module is electrically connected to the microprocessor control module and is used to monitor the temperature of the semiconductor laser. The communication module is used for communication between the microprocessor control module and the host computer.

2. The semiconductor laser control system according to claim 1, characterized in that, The multi-channel independent DAC conversion module includes seven independent DAC conversion modules, namely the first DAC conversion module, the second DAC conversion module, the third DAC conversion module, the fourth DAC conversion module, the fifth DAC conversion module, the sixth DAC conversion module, and the seventh DAC conversion module; The multi-channel independent ADC conversion module includes seven independent ADC conversion modules, namely the first ADC conversion module, the second ADC conversion module, the third ADC conversion module, the fourth ADC conversion module, the fifth ADC conversion module, the sixth ADC conversion module, and the seventh ADC conversion module; The multi-channel independent voltage acquisition module consists of three independent voltage acquisition modules: a first voltage acquisition module, a second voltage acquisition module, and a third voltage acquisition module. The multi-channel independent current acquisition module consists of four independent current acquisition modules: a first current acquisition module, a second current acquisition module, a third current acquisition module, and a fourth current acquisition module.

3. The semiconductor laser control system according to claim 2, characterized in that, The first DAC conversion module is connected to the semiconductor optical amplifier unit through the first voltage-controlled current source module. The first analog voltage signal output by the first DAC conversion module controls the first voltage-controlled current source module to output a first tuning current signal to tune the semiconductor optical amplifier unit. The second DAC conversion module is connected to the power amplifier through the second voltage-controlled current source module. The second analog voltage signal output by the second DAC conversion module controls the second voltage-controlled current source module to output a second tuning current signal to tune the power amplifier. The third DAC conversion module is connected to the first passive cavity region through the first voltage-controlled voltage source module. The third analog voltage signal output by the third DAC conversion module controls the first voltage-controlled voltage source module to output a first tuning voltage signal to tune the first passive cavity region. The fourth DAC conversion module is connected to the laser region through the third voltage-controlled current source module, and the fourth analog voltage signal output by the fourth DAC conversion module controls the third voltage-controlled current source module to output a third tuning current signal to tune the laser region; The fifth DAC conversion module is connected to the phase adjustment region through the second voltage-controlled voltage source module, and the fifth analog voltage signal output by the fifth DAC conversion module controls the second voltage-controlled voltage source module to output a second tuning voltage signal to tune the phase adjustment region; The sixth DAC conversion module is connected to the second passive cavity region through the third voltage-controlled voltage source module. The sixth analog voltage signal output by the sixth DAC conversion module controls the third tuning voltage signal output by the third voltage-controlled voltage source module to tune the second passive cavity region.

4. The semiconductor laser control system according to claim 2, characterized in that, The microprocessor control module controls the first voltage-controlled current source to output a first current through the first DAC conversion module. The first current acquisition module acquires the first current output by the first voltage-controlled current source and transmits the acquired first current signal to the first ADC conversion module. The first current acquisition module and the first ADC conversion module convert the first current signal into a first digital signal and transmit it to the microprocessor control module. The microprocessor control module controls the second voltage-controlled current source to output a second current through the second DAC conversion module. The second current acquisition module acquires the second current output by the second voltage-controlled current source and transmits the acquired second current signal to the second ADC conversion module. The second current acquisition module and the second ADC conversion module convert the second current signal into a second digital signal and transmit it to the microprocessor control module. The microprocessor control module controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module. The first voltage acquisition module acquires the first voltage output by the first voltage-controlled voltage source and transmits the acquired first voltage signal to the third ADC conversion module. The first voltage acquisition module and the third ADC conversion module convert the first voltage signal into a third digital signal and transmit it to the microprocessor control module. The microprocessor control module controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module. The third current acquisition module acquires the third current output by the third voltage-controlled current source and transmits the acquired third current signal to the fourth ADC conversion module. The third current acquisition module and the fourth ADC conversion module convert the third current signal into a fourth digital signal and transmit it to the microprocessor control module. The microprocessor control module controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module. The second voltage acquisition module acquires the second voltage output by the second voltage-controlled voltage source and transmits the acquired second voltage signal to the fifth ADC conversion module. The second voltage acquisition module and the fifth ADC conversion module convert the second voltage signal into a fifth digital signal and transmit it to the microprocessor control module. The microprocessor control module controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module. The third voltage acquisition module acquires the third voltage output by the third voltage-controlled voltage source and transmits the acquired third voltage signal to the sixth ADC conversion module. The third voltage acquisition module and the sixth ADC conversion module convert the third voltage signal into a sixth digital signal and transmit it to the microprocessor control module.

5. The semiconductor laser control system according to claim 2, characterized in that, It also includes a thermistor for acquiring the temperature of the semiconductor laser, a thermoelectric cooler for adjusting the temperature of the semiconductor laser, and a thermoelectric cooler control module for controlling the operation of the thermoelectric cooler. The seventh DAC conversion module is electrically connected to the thermoelectric cooler through the thermoelectric cooler control module. The fourth current acquisition module is electrically connected to the thermoelectric cooler. The seventh ADC conversion module acquires the cooling control current of the thermoelectric cooler through the fourth current acquisition module. The thermistor is packaged with the semiconductor laser and the thermoelectric cooler as a single unit. The microprocessor control module obtains the temperature of the thermistor through the temperature sampling feedback module. The temperature sampling feedback module acquires the die temperature of the semiconductor laser through the thermistor and feeds back the measured temperature value to the microprocessor control module. The microprocessor control module controls the voltage-controlled current source module to adjust the cooling control current of the thermoelectric cooler to regulate the cooling efficiency based on the measured temperature value.

6. The semiconductor laser control system according to claim 1 or 5, characterized in that, It also includes a data storage module for storing control data of the control system and a heat dissipation module for dissipating heat from the control system and maintaining it in a constant temperature working environment. The data storage module and the heat dissipation module are electrically connected to the microprocessor control module.

7. The semiconductor laser control system according to claim 5, characterized in that, The semiconductor cooling control module includes an H-bridge drive circuit, which is electrically connected to the semiconductor cooling chip. The seventh DAC conversion module controls the power supply current of the H-bridge drive circuit to control the cooling efficiency of the semiconductor cooling chip.

8. The semiconductor laser control system according to claim 6, characterized in that, The heat dissipation module is an air-cooled radiator, which includes a fan, heat sink, and heat pipes.

9. The semiconductor laser control system according to claim 1, characterized in that, The microprocessor control module includes a PGA programmable logic controller or an ARM processor.

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