Semiconductor manufacturing apparatus component

Abstract

A cheap semiconductor manufacturing device component provided with a plug column that allows gas to flow. A semiconductor manufacturing device component (10) is provided with a ceramic plate (20), a plug column insertion hole (24), and a plug column (26). The ceramic plate (20) has a wafer placement surface (21) on an upper surface, and has an electrode (22) built in. The plug column insertion hole (24) is provided in at least a portion of a through hole that penetrates the ceramic plate (20) in the up-down direction, and has an internal thread portion (24a) on an inner peripheral surface. The plug column (26) has an external thread portion (26a) that is screwed into the internal thread portion (24a) on an outer peripheral surface, and allows gas to flow.

Description

TECHNICAL FIELD

[0001] The present application relates to a member for a semiconductor manufacturing apparatus. BACKGROUND

[0002] Conventionally, as a member for a semiconductor manufacturing apparatus, a member for a semiconductor manufacturing apparatus provided with an electrostatic chuck having a wafer placement surface on an upper surface thereof is known. For example, Patent Literature 1 discloses an electrostatic chuck provided with a ceramic plate that holds a wafer by adsorption, a through-hole formed in the ceramic plate, and a porous plug column disposed in the through-hole. When manufacturing such an electrostatic chuck, first, a green sheet in which an electrostatic electrode is built in is fired, thereby producing the ceramic plate, and the through-hole is formed in the ceramic plate. Next, a ceramic mixture in the form of a paste that contains ceramic particles and combustion-disappearing particles is filled in the through-hole, and then heated to a prescribed temperature, thereby firing the ceramic particles in the mixture and causing the combustion-disappearing particles to disappear. In this way, the porous plug column is formed in the through-hole, and the above-described electrostatic chuck is obtained. In such an electrostatic chuck, in a state in which a wafer is electrostatically adsorbed to the wafer placement surface, helium gas is introduced from the outside to the porous plug column. Then, the helium gas is supplied to the back surface side of the wafer, and heat conduction between the wafer and the ceramic plate becomes good. At this time, the helium gas passes through the pores of the porous plug column, and thus, compared to the case in which the through-hole in which the porous plug column is not present, spark discharge on the back surface side of the wafer can be suppressed. If spark discharge occurs on the back surface side of the wafer, the wafer deteriorates and cannot be used as a device, and thus is not preferable.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2019-29384 SUMMARY

[0006] However, for the above-described electrostatic chuck, two firing processes are required. That is, the process of producing the ceramic plate and the process of producing the porous plug column each require firing. Therefore, there is a problem in that the manufacturing cost is high.

[0007] The present application has been made to solve the above-described problem, and has as its main object to provide an inexpensive member for a semiconductor manufacturing apparatus provided with a plug column that allows the flow of a gas.

[0008] The member for a semiconductor manufacturing apparatus of the present application is provided with:

[0009] a ceramic plate having a wafer placement surface on an upper surface thereof and in which an electrode is built in;

[0010] A plug insertion hole is provided in at least a portion of the through hole that extends through the ceramic plate in the up-down direction, and has an internal thread portion in an inner peripheral surface.

[0011] A plug that is insulating and has an external thread portion that is screwed into the internal thread portion of the plug insertion hole, and allows gas to flow.

[0012] In the semiconductor manufacturing device component, the plug that allows gas to flow is fixed to the plug insertion hole of the ceramic plate by screwing. Therefore, it is not necessary to perform baking to fix the plug to the plug insertion hole. Thus, it is possible to inexpensively provide a semiconductor manufacturing device component that has a plug.

[0013] Note that in this specification, up-down, left-right, front-rear, and the like are used to describe the present application, but up-down, left-right, front-rear are merely relative positional relationships. Thus, in the case where the orientation of the semiconductor manufacturing device component is changed, up-down can become left-right, left-right can become up-down, and the like are included in the technical scope of the present application.

[0014] In the semiconductor manufacturing device component of the present application, the wafer placement surface can have a plurality of small protrusions that support the wafer, and the upper surface of the plug can be positioned lower than the upper surfaces of the small protrusions. Thus, the wafer is not lifted by the upper surface of the plug. In this case, the upper surface of the plug can be positioned at the same height as a reference surface in the wafer placement surface that is not provided with the small protrusions, or can be positioned at a position that is lower than the reference surface by 0.1 mm or less. Thus, the height of the space between the back surface of the wafer and the upper surface of the plug is suppressed to a low level, and thus it is possible to prevent spark discharge from occurring in the space.

[0015] In the semiconductor manufacturing device component of the present application, at least a portion of the external thread portion can be bonded to the internal thread portion. Thus, it is possible to prevent the screw of the plug from loosening with use of the semiconductor manufacturing device component.

[0016] In the semiconductor manufacturing device component of the present application, the plug can be a porous body. A porous body has a large number of fine pores, and thus is suitable as a plug that allows gas to flow. In this case, the external thread portion can be densified. Thus, it is possible to prevent powder and the like from being generated by friction of the external thread portion of the plug of the porous body when the external thread portion is screwed into the internal thread portion of the plug insertion hole.

[0017] In the semiconductor manufacturing device component of the present application, the plug can be a cylindrical member, and the plug insertion hole can be a cylindrical hole. Thus, the shapes of the plug and the plug insertion hole are relatively simple, and thus it is possible to easily manufacture the plug and the plug insertion hole.

[0018] In the semiconductor manufacturing apparatus component of the present application, the stud can have a reverse conical frustum-shaped head portion and a cylindrical foot portion, and the external thread portion can be provided on the outer peripheral surface of the foot portion and not on the outer peripheral surface of the head portion. In addition, the stud insertion hole can have a head portion corresponding portion having the same shape as the head portion and a foot portion corresponding portion having the same shape as the foot portion, and the internal thread portion can be provided on the inner peripheral surface of the foot portion corresponding portion and not on the inner peripheral surface of the head portion corresponding portion. Accordingly, it is not necessary to provide a thread on the head portion of the stud and the head portion corresponding portion of the stud insertion hole. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a longitudinal sectional view of the semiconductor manufacturing apparatus component 10.

[0020] Figure 2 is a plan view of the ceramic plate 20.

[0021] Figure 3 is a partial enlarged view of Figure 1 .

[0022] Figure 4 is a partial enlarged view showing another example of the stud 26.

[0023] Figure 5 is a partial enlarged view showing another example of the stud 26.

[0024] Figure 6 is a partial enlarged view showing another example of the stud 26.

[0025] Figure 7 is a partial enlarged view showing another example of the stud 26.

[0026] Figure 8 is a partial enlarged view showing the stud 76.

[0027] Figure 9 is a partial enlarged view showing the case where the stud 26 is bonded to the stud insertion hole 24.

[0028] Figure 10 is a partial enlarged view showing the case where the stud 26 is bonded to the stud insertion hole 24.

[0029] Figure 11 is a partial enlarged view showing an example in which the stud insertion hole 124 is provided in a part of the through hole.

[0030] Figure 12 is a longitudinal sectional view showing an example in which the gas supply passage 64 is provided in the cooling plate 30.

[0031] Figure 13 is a perspective view when the stud 226 is viewed from an oblique lower side.

[0032] Explanation of symbols

[0033] 10…semiconductor manufacturing device component, 20…ceramic plate, 21…wafer mounting surface, 21a…seal ring belt, 21b…circular small protrusion, 21c…reference surface, 22…electrode, 22a…through hole, 24…plug insertion hole, 24a…internal thread portion, 26…plug, 26a…external thread portion, 26b…upper surface, 30…cooling plate, 32…coolant flow path, 34…gas supply passage, 40…bonding layer, 40a…hole, 50…adhesive layer, 64…gas supply passage, 64a…ring portion, 64b…introduction portion, 64c…distribution portion, 74…plug insertion hole, 74a…internal thread portion, 76…plug, 76a…external thread portion, 76b…upper surface, 124…plug insertion hole, 124a…internal thread portion, 126…plug, 126d…space, 128…fine hole, 226…plug, 226a…external thread portion, 226d…internal flow path, 741…head portion corresponding portion, 742…foot portion corresponding portion, 761…head portion, 762…foot portion. DETAILED DESCRIPTION

[0034] Next, the preferred embodiment of the present application will be described using the accompanying drawings. Figure 1 is a longitudinal sectional view of the semiconductor manufacturing device component 10, Figure 2 is a plan view of the ceramic plate 20, Figure 3 is Figure 1 is a partial enlarged view of the

[0035] The semiconductor manufacturing device component 10 is provided with a ceramic plate 20, a plug insertion hole 24, a plug 26, and a cooling plate 30.

[0036] The ceramic plate 20 is a ceramic-made circular plate (for example, 300 mm in diameter and 5 mm in thickness) of an alumina sintered body, an aluminum nitride sintered body, or the like. An upper surface of the ceramic plate 20 is a wafer mounting surface 21. The ceramic plate 20 has an electrode 22 built therein. As shown in FIG. 1, the electrode 22 is formed in a circular shape on the wafer mounting surface 21. Figure 2As shown, a sealing ring 21a is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple small circular protrusions 21b are formed on the entire surface. The sealing ring 21a and the small circular protrusions 21b have the same height, for example, several μm to several tens of μm. The electrode 22 is a planar mesh electrode used as an electrostatic electrode, and a DC voltage can be applied. When a DC voltage is applied to the electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 (specifically, the upper surface of the sealing ring 21a and the upper surface of the small circular protrusions 21b) by electrostatic attraction. When the application of the DC voltage is released, the attraction and fixation of the wafer W relative to the wafer mounting surface 21 is released. The electrode 22 is sometimes also used as an RF electrode. Specifically, an upper electrode (not shown) is arranged above the wafer mounting surface 21. When high-frequency power is applied between the parallel planar electrodes including the upper electrode and the electrode 22 built into the ceramic plate 20, plasma is generated. Electrode 22 is provided with a through hole 22a for inserting the plug 26. It should be noted that the portion of the wafer mounting surface 21 without the sealing ring 21a and the small circular protrusion 21b is referred to as the reference surface 21c.

[0037] The plunger insertion hole 24 is a through hole that penetrates the ceramic plate 20 along the vertical direction. For example... Figure 3 As shown, the plunger insertion hole 24 has an internal thread 24a on its inner circumferential surface. The plunger insertion holes 24 are provided at multiple locations on the ceramic plate 20 (e.g., multiple locations evenly spaced along the circumference). In this embodiment, the plunger insertion hole 24 is a cylindrical hole (e.g., an opening diameter of 8 mm and a total length (length in the vertical direction) of 5 mm).

[0038] The plunger 26 is an electrically insulating cylindrical component that allows gas to flow in the vertical direction (e.g., outer diameter of the upper and lower bases 8 mm, total length (vertical length) 5 mm). For example... Figure 3 As shown, the plunger 26 has an external thread 26a on its outer peripheral surface that can engage with the internal thread 24a. The upper surface 26b of the plunger 26 is located lower than the upper surface of the sealing ring 21a and the upper surface of the small protrusion 21b. In this embodiment, the upper surface 26b of the plunger 26 is at the same height as the reference surface 21c of the wafer placement surface 21. In addition, the total length of the plunger 26 is the same as the total length of the plunger insertion hole 24. The plunger 26 is a porous material, and in this embodiment, it is a ceramic porous material. As a ceramic porous material, for example, a porous material made of the same material as the ceramic plate 20 can be used.

[0039] The cooling plate 30 is a circular plate (a circular plate having the same diameter as the ceramic plate 20 or a larger diameter) having a high thermal conductivity. A refrigerant flow path 32 for circulating a refrigerant and a gas supply passage 34 for supplying a gas to the plug column 26 are formed in the inside of the cooling plate 30. The refrigerant flow path 32 is formed in one stroke from the inlet to the outlet on the entire surface of the cooling plate 30 in plan view. The material of the cooling plate 30 can be, for example, a metal material or a metal matrix composite (MMC) or the like. As the metal material, Al, Ti, Mo, or an alloy thereof or the like can be given. As the MMC, a material containing Si, SiC, and Ti (also referred to as SiSiCTi), a material obtained by impregnating Al and / or Si in a SiC porous body, or the like can be given. The cooling plate 30 and the ceramic plate 20 are joined by a joining layer 40. The joining layer 40 can be a resin layer or a metal layer. In the case where the joining layer 40 is a metal layer, the material of the cooling plate 30 is preferably a material having a thermal expansion coefficient close to that of the ceramic plate 20. A hole 40a penetrating in the up-and-down direction is provided in the joining layer 40 at a position opposed to the plug insertion hole 24 and the gas supply passage 34.

[0040] Next, an example of use of the semiconductor manufacturing apparatus component 10 thus configured will be described. First, in a state where the semiconductor manufacturing apparatus component 10 is provided in an unillustrated chamber, a wafer W is placed on the wafer placement surface 21. Then, the chamber is depressurized by a vacuum pump, and adjusted to a prescribed vacuum degree, and a direct current voltage is applied to the electrodes 22 of the ceramic plate 20 to cause electrostatic adsorption force, and the wafer W is adsorbed and fixed to the wafer placement surface 21 (specifically, the upper surface of the seal ring band 21a and the upper surface of the circular small protrusion 21b). Next, the chamber is set to a reaction gas atmosphere of a prescribed pressure (for example, several 10 to several 100 Pa), and in this state, a high frequency voltage is applied between an unillustrated upper electrode provided at the top of the chamber and the electrodes 22 of the semiconductor manufacturing apparatus component 10 to cause plasma. Note that, instead of applying a high frequency voltage between the upper electrode and the electrodes 22, a high frequency voltage can be applied between the upper electrode and the cooling plate 30. The surface of the wafer W is processed by the generated plasma. The refrigerant is circulated in the refrigerant flow path 32 of the cooling plate 30. A backside gas is introduced from an unillustrated gas cylinder to the gas supply passage 34. As the backside gas, a heat transfer gas (for example, helium or the like) is used. The backside gas passes through the gas supply passage 34 and the plug column 26, and is supplied to and sealed in the space between the back surface of the wafer W and the reference surface 21c of the wafer placement surface 21. Due to the presence of the backside gas, heat transfer between the wafer W and the ceramic plate 20 is efficiently performed.

[0041] Next, a manufacturing example of the semiconductor manufacturing apparatus component 10 will be described. First, the ceramic plate 20 and the plug column 26 are prepared. The ceramic plate 20 and the plug column 26 are as described above. Next, the plug column 26 is screwed into the plug column insertion hole 24 of the ceramic plate 20. Specifically, an adhesive knob is attached to the upper surface or the lower surface of the plug column 26, the knob is held by hand, and the plug column 26 is screwed into the upper opening or the lower opening of the plug column insertion hole 24. At this time, the screwing is performed so that the upper surface 26b of the plug column 26 coincides with the reference surface 21c of the wafer mounting surface 21. Next, the adhesive knob is removed, and the surface after the removal of the knob is cleaned as necessary. Then, the lower surface of the ceramic plate 20 and the upper surface of the cooling plate 30 are joined by a joining material. Accordingly, the joining material becomes the joining layer 40, and the semiconductor manufacturing apparatus component 10 is obtained.

[0042] In the semiconductor manufacturing apparatus component 10 described in detail above, the plug column 26 that allows the passage of the gas is screwed into the plug column insertion hole 24 of the ceramic plate 20. Therefore, it is not necessary to perform the firing for fixing the plug column 26 to the plug column insertion hole 24. Therefore, the semiconductor manufacturing apparatus component 10 provided with the plug column 26 can be inexpensively provided.

[0043] In addition, the upper surface 26b of the plug column 26 is positioned at a lower position than the upper surface of the seal ring band 21a and the upper surface of the circular small protrusion 21b. Therefore, the wafer W is not lifted up by the upper surface 26b of the plug column 26.

[0044] Further, the upper surface 26b of the plug column 26 is at the same height as the reference surface 21c of the wafer mounting surface 21. Therefore, the height of the space between the lower surface of the wafer W and the upper surface 26b of the plug column 26 is suppressed to a low level. Therefore, it is possible to prevent the generation of spark discharge in the space.

[0045] Further, the plug column 26 is a cylindrical component, and the plug column insertion hole 24 is a cylindrical hole, and the shapes are relatively simple. Therefore, it is possible to easily manufacture the plug column 26 and the plug column insertion hole 24.

[0046] In addition, the outer peripheral surface of the plug column 26 and the inner peripheral surface of the plug column insertion hole 24 are formed with threads, and therefore, become zigzag in the up-and-down direction. Accordingly, compared to the case where the threads are not formed, the distance from the wafer W to the cooling plate 30 through the outer peripheral surface of the plug column 26 and the inner peripheral surface of the plug column insertion hole 24 becomes longer. Therefore, it is possible to prevent the generation of the surface discharge between the wafer W and the cooling plate 30.

[0047] Further, when the semiconductor manufacturing apparatus component 10 is used for a long period of time, and the upper surface 26b of the plug column 26 is thinned and becomes lower than the reference surface 21c, the amount of screwing of the plug column 26 with respect to the plug column insertion hole 24 can be adjusted so that the upper surface 26b of the plug column 26 is restored to the same height as the reference surface 21c.

[0048] Note that the present application is not limited to the above-described embodiments, and can be implemented in various forms as long as it falls within the technical scope of the present application.

[0049] In the above-described embodiments, the upper surface 26b of the stud 26 is the same height as the reference surface 21c of the wafer mounting surface 21, but is not particularly limited thereto. For example, as shown in Figure 4 , the difference Δh obtained by subtracting the height of the upper surface 26b of the stud 26 from the height of the reference surface 21c of the wafer mounting surface 21 can be in the range of 0.1 mm or less. In other words, the upper surface 26b of the stud 26 can be disposed at a position lower than the reference surface 21c of the wafer mounting surface 21 by 0.1 mm or less. Even in this case, the height of the space between the lower surface of the wafer W and the upper surface 26b of the stud 26 is suppressed to a relatively low level. Therefore, it is possible to prevent spark discharge from occurring in this space.

[0050] In the above-described embodiments, the total length of the stud 26 is made the same as the total length of the stud insertion hole 24, but is not particularly limited thereto. For example, as shown in Figure 5 , the total length of the stud 26 can be made shorter than the total length of the stud insertion hole 24, as shown in Figure 6 , the total length of the stud 26 can be made longer than the total length of the stud insertion hole 24. Alternatively, as shown in Figure 7 , the total length of the stud 26 can be made the same as the sum of the total length of the stud insertion hole 24 and the thickness of the bonding layer 40. Figure 7 In the above-described embodiments, if the ceramic plate 20 and the cooling plate 30 are bonded using the bonding layer 40, and then the stud 26 is screwed into the stud insertion hole 24 from the upper opening of the stud insertion hole 24 until the lower surface of the stud 26 reaches the upper surface of the cooling plate 30, the upper surface 26b of the stud 26 becomes the same height as the reference surface 21c of the wafer mounting surface 21. Note that, Figures 5 to 7 In the above-described embodiments, the upper surface 26b of the stud 26 can be disposed at a position lower than the reference surface 21c of the wafer mounting surface 21 by 0.1 mm or less. Figure 4

[0051] In the above-described embodiments, the stud 26 is a cylindrical member, and the stud insertion hole 24 is a cylindrical hole, but is not particularly limited thereto. For example, as shown in Figure 8 ​The illustrated plug column 76 and plug column insertion hole 74. The plug column 76 has a head portion 761 that is a reverse conical frustum, and a foot portion 762 that is a cylinder. An external thread portion 76a is provided on the outer peripheral surface of the foot portion 762, and is not provided on the outer peripheral surface of the head portion 761. The plug column insertion hole 74 has a space corresponding to the head portion 761, which is a head portion corresponding portion 741, and a space corresponding to the foot portion 762, which is a foot portion corresponding portion 742. An internal thread portion 74a is provided on the inner peripheral surface of the foot portion corresponding portion 742, and is not provided on the inner peripheral surface of the head portion corresponding portion 741. In this way, a thread does not need to be provided on the head portion 761 of the plug column 76 and the head portion corresponding portion 741 of the plug column insertion hole 74. In this case, it is preferable to design such that, when the outer peripheral surface of the head portion 761 of the plug column 76 coincides with the inner peripheral surface of the head portion corresponding portion 741 of the plug column insertion hole 74, the upper surface 76b of the head portion 761 is the same height as the reference surface 21c. In this way, when the plug column 76 is installed in the plug column insertion hole 74, when the plug column 76 is screwed into the plug column insertion hole 74 and screwed to the end, the upper surface 76b of the head portion 761 is the same height as the reference surface 21c.

[0052] In the above embodiment, as illustrated in Figure 9 , the internal thread portion 24a of the plug column insertion hole 24 and the external thread portion 26a of the plug column 26 can be bonded by the adhesive layer 50. As the adhesive layer 50, an organic adhesive, an inorganic adhesive, or a metal solder can be used. In this way, the external thread portion 26a of the plug column 26 can be prevented from relaxing with use of the semiconductor manufacturing device component 10. As illustrated in Figure 10 , the adhesive layer 50 can be provided only in the portion between the internal thread portion 24a and the external thread portion 26a that is close to the lower portion opening of the plug column insertion hole 24. Note that, Figures 4 to 8 , the adhesive layer 50 can also be provided as illustrated in Figure 9 , Figure 10 .

[0053] In the above embodiment, a dense layer can be provided on the surface of the external thread portion 26a of the plug column 26, which is a porous body. In this way, the external thread portion 26a of the plug column 26 can be prevented from being rubbed and generating powder or the like when the external thread portion 26a is screwed into the internal thread portion 24a of the plug column insertion hole 24. As a method of providing the dense layer, for example, a heat-resistant resin tube or sheet can be overlaid on the surface of the external thread portion 26a, and the heat-resistant resin film can be made to adhere by hot air heating or furnace heating, or a dense sputtered film can be formed on the surface of the external thread portion 26a by sputtering.

[0054] In the above embodiment, the through hole that penetrates the ceramic plate 20 in the up-down direction is used as the plug column insertion hole 24 in its entirety, but is not particularly limited thereto. For example, as illustrated in Figure 11As shown, the upper portion of the through-hole that penetrates the ceramic plate 20 in the up-and-down direction can be composed of a plurality of fine holes 128, and the lower portion of the through-hole can be composed of a plug-insertion hole 124. That is, the plug-insertion hole 124 can be provided in a portion of the through-hole. The plug-insertion hole 124 has an internal thread portion 124a in the inner circumferential surface. The plug 126 is substantially the same as the plug 26 of the above-described embodiment, but has a space 126d in the upper surface that communicates with the plurality of fine holes 128. Even so, the same effects as the above-described embodiment are obtained.

[0055] In the above-described embodiment, the hole that penetrates the cooling plate 30 in the up-and-down direction is provided as the gas supply passage 34, but is not limited thereto. For example, as shown in FIG. 10, a gas supply passage 64 can be provided in the cooling plate 30. The gas supply passage 64 has a ring portion 64a that is concentric with the cooling plate 30 in plan view, a gas-introducing portion 64b that introduces gas from the back surface of the cooling plate 30 to the ring portion 64a, and a distribution portion 64c that distributes the gas from the ring portion 64a to each plug 26. The number of the gas-introducing portions 64b is less than the number of the distribution portions 64c, and can be, for example, one. Thereby, the number of gas pipes connected to the cooling plate 30 can be less than the number of the plugs 26. In this case, the plug 26 is screwed from the upper portion opening of the plug-insertion hole 24. Figure 12

[0056] In the above-described embodiment, the plug 26 of the porous body is used, but is not particularly limited thereto. As the plug 26, for example, a substance obtained by curing a fine ceramic obtained by pulverizing an insulating ceramic to a fine degree in such a manner as to have air permeability using an inorganic binder, a substance obtained by curing glass fibers in such a manner as to have air permeability using an inorganic binder, or a heat-resistant Teflon sponge (Teflon is a registered trademark) can be used. Alternatively, as shown in FIG. 11, a plug 226 having an external thread portion 226a in the outer circumferential surface of a cylindrical ceramic dense body and having a helical internal flow path 226d that penetrates in the up-and-down direction can be used. Figure 13

[0057] In the above-described embodiment, the electrostatic electrode is exemplified as the electrode 22 built in the ceramic plate 20, but is not particularly limited thereto. For example, instead of the electrode 22, a heating electrode (resistance heating body) can be built in the ceramic plate 20, an RF electrode can be built in, or a heating electrode (resistance heating body) can be built in the ceramic plate 20 in addition to the electrode 22, or an RF electrode can be built in.​​

Claims

1. A component for a semiconductor manufacturing apparatus, comprising: A ceramic plate having a wafer mounting surface on its upper surface and electrodes embedded therein; A plunger insertion hole, wherein the plunger insertion hole is provided in at least a portion of a through hole extending through the ceramic plate in a vertical direction, and has an internal thread on its inner circumferential surface; and An insulating plunger having an external thread on its outer circumferential surface that engages with the internal thread, and allowing gas flow. The wafer mounting surface has multiple small protrusions that support the wafer. The upper surface of the plunger is located lower than the upper surface of the small protrusion. The upper surface of the plunger is located at the same height as the reference surface in the wafer mounting surface where the small protrusion is not provided, or at a position 0.1 mm or less below the reference surface. The plug is a porous material. The external threaded portion has been densified.

2. The component for a semiconductor manufacturing apparatus according to claim 1, wherein, At least a portion of the external thread is bonded to the internal thread.

3. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, The plunger is a cylindrical component. The insertion hole for the plunger is a cylindrical hole.

4. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, The plunger has an inverted frustum-shaped head and a cylindrical foot, and the external thread is located on the outer peripheral surface of the foot but not on the outer peripheral surface of the head. The plunger insertion hole has a head-corresponding portion with the same shape as the head and a foot-corresponding portion with the same shape as the foot. The internal thread portion is provided on the inner circumferential surface of the foot-corresponding portion but not on the inner circumferential surface of the head-corresponding portion.

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