Static charge eliminating device and developing machine

Abstract

The present disclosure relates to an electrostatic charge elimination device and a developing machine, the electrostatic charge elimination device comprising: a power supply assembly; a pulse module electrically connected with the power supply assembly; and an electrode electrically connected with the pulse module and used for conducting a pulse signal of the pulse module to a target position to form a pulse electric field. The present disclosure conducts the pulse signal emitted by the pulse module to the target position through the electrode to form a pulse electric field capable of ionizing the developing solution and the cleaning solution at the target position, adsorbs the electrostatic charge to the electrode connected with the high-voltage pulse module, reduces the electrostatic charge carried by the developing solution in the target position region or flowing through the target position, and enables the developing solution and the cleaning solution to be uniformly coated after falling on the wafer surface, thereby achieving uniform line width and improving wafer yield.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductors, and in particular to an electrostatic charge elimination device and a developing machine. BACKGROUND

[0002] Currently, in wafer processing, the pattern formed by photoresist is usually used as a mask for the next process (such as etching, ion implantation). Therefore, the uniformity of the line width of the pattern formed by the photolithography process is a very important factor in determining the quality of the entire wafer. The photoresist process involves the use of developing solution and cleaning solution. In the developing and cleaning process, the developing solution and the cleaning solution need to be uniformly coated on the wafer surface to ensure uniform line width.

[0003] Since the developing solution and the cleaning solution are poor conductors, they can easily generate static electricity when flowing in the pipeline and rubbing against the inner wall of the pipeline. If the generated static electricity is not discharged in time, it will fall onto the wafer surface along with the developing solution and the cleaning solution. The existence of static electricity can cause the developing solution and the cleaning solution to be unevenly coated on the wafer surface, resulting in uneven line width and ultimately causing the wafer to be reworked or even scrapped. SUMMARY

[0004] The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the protection scope of the claims.

[0005] To overcome the problems in the related art, the present disclosure provides an electrostatic charge elimination device and a developing machine.

[0006] The electrostatic charge elimination device provided by the embodiments of the present disclosure comprises a power supply assembly, a pulse module electrically connected to the power supply assembly and receiving power provided by the power supply assembly, and electrodes, at least two of which are connected to the cathode and the anode of the pulse module, respectively, and are arranged around a target position and used to conduct the pulse signal of the pulse module to the target position to form a pulse electric field filled in the target position.

[0007] According to some embodiments of the present disclosure, the profile of the electrode is columnar, and at least two of the electrodes are arranged in parallel to each other.

[0008] According to some embodiments of the present disclosure, the profile of the electrode is arc-shaped, and the electrode is distributed in the circumferential direction around the target position.

[0009] According to some embodiments of the present disclosure, an adsorbing wire is electrically connected to the electrode, the adsorbing wire extends in a continuous undulating manner along the length direction of the electrode, and the end portion of the adsorbing wire corresponds to the end position of the electrode.

[0010] According to some embodiments of the present disclosure, a plurality of adsorption filaments are arranged on the same electrode, and the adsorption filaments on the same electrode are distributed on the side of the electrode facing other electrodes.

[0011] According to some embodiments of the present disclosure, a grounding wire is electrically connected to the electrode, and the grounding wire is detachably connected to the electrode.

[0012] According to some embodiments of the present disclosure, the power supply assembly comprises a connecting wire for connecting an external electrical appliance, the pulse module is electrically connected to the external electrical appliance through the connecting wire, and the external electrical appliance supplies power to the pulse module.

[0013] According to some embodiments of the present disclosure, the pulse module is electrically connected to a rectifier module, the rectifier module is connected to the power supply assembly and used to supply the converted current to the pulse module.

[0014] According to some embodiments of the present disclosure, an insulating protective cover is fixedly arranged on the pulse module to cover the pulse module, the rectifier module and the power supply assembly.

[0015] In a second aspect, the present disclosure provides a developing machine, which comprises the electrostatic charge elimination device.

[0016] According to some embodiments of the present disclosure, the developing machine has a liquid supply pipeline, and the electrode has two electrodes, which are respectively attached to opposite sides of the wall of the liquid supply pipeline.

[0017] According to some embodiments of the present disclosure, the electrode extends along the length direction of the liquid supply pipeline.

[0018] According to some embodiments of the present disclosure, the liquid supply pipeline is provided with a nozzle and a valve, and the electrode is located on the wall of the liquid supply pipeline between the nozzle and the valve.

[0019] According to some embodiments of the present disclosure, the pulse module is electrically connected to the developing machine, the power supply assembly is the developing machine, and the developing machine supplies power to the pulse module.

[0020] According to some embodiments of the present disclosure, the developing machine comprises a grounded machine case, a grounding wire is detachably connected to the electrode, and the grounding wire is arranged on the machine case.

[0021] The technical scheme provided by the embodiment of the present disclosure can have the following beneficial effects: the pulse signals emitted by the pulse module are transmitted to the target position through the electrode, a pulse electric field capable of ionizing the developing solution and the cleaning solution at the target position is formed, the static charges are adsorbed around the electrode connected to the high-voltage pulse module, the static charges carried by the developing solution in the target position region or flowing through the target position are reduced, the developing solution and the cleaning solution can be uniformly coated after falling on the wafer surface, and the purpose of uniform line width and improved wafer yield is achieved.

[0022] It should be understood that the general description above and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. Other aspects can be apparent after reading and understanding the drawings and detailed description. BRIEF DESCRIPTION OF DRAWINGS

[0023] The accompanying drawings, which are incorporated into and form part of the specification, illustrate an embodiment consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0024] Figure 1 is a schematic diagram of an electrode layout according to an exemplary embodiment.

[0025] Figure 2 is a schematic diagram of an electrode shape according to an exemplary embodiment.

[0026] Figure 3 is a schematic diagram of the relative position relationship between the adsorption wire and the electrode according to an exemplary embodiment.

[0027] Figure 4 is a schematic diagram of the relative position relationship between the electrode and the liquid supply pipeline according to an exemplary embodiment.

[0028] Figure 5 is a schematic diagram of the relative position relationship between the electrode and the adsorption wire according to an exemplary embodiment.

[0029] Figure 6 is a schematic diagram of the relative position relationship between the electrode and the adsorption wire according to another exemplary embodiment.

[0030] Figure 7 is a schematic diagram of the relative position relationship between the electrode and the adsorption wire according to another exemplary embodiment.

[0031] REFERENCE NUMERALS

[0032] 1, power supply assembly; 11, case; 12, power adapter; 13, connecting wire; 2, rectifier module; 3, pulse module; 31, wire; 4, insulation protection cover; 41, opening; 5, electrode; 51, adsorption wire; 52, ground wire; 6, liquid supply pipeline; 61, valve; 62, nozzle. DETAILED DESCRIPTION

[0033] In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the embodiments will be described clearly and completely below in connection with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some but not all of the embodiments of the present disclosure. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other in any manner without conflict.

[0034] As described in the background, when the developing solution and the cleaning solution flow in the pipeline, the friction of both with the inner wall of the pipeline is easy to generate static charges. If the generated static charges are not released in time, the static charges will fall to the wafer surface together with the developing solution and the cleaning solution. The existence of the static charges will cause the developing solution and the cleaning solution to be unevenly coated on the wafer surface, resulting in uneven line width, and finally causing the wafer to be reworked or even scrapped.

[0035] Based on this, the present disclosure provides a static charge elimination device and a developing machine, which transmits the pulse signal emitted by the pulse module to the target position through the electrode, forms a pulse electric field capable of ionizing the developing solution and the cleaning solution at the target position, adsorbs the static charges to the electrode connected with the high-voltage pulse module, reduces the static charges carried by the developing solution in the target position area or flowing through the target position, so that the developing solution and the cleaning solution can be uniformly coated after falling to the wafer surface, and then the purpose of uniform line width and improving the wafer yield is achieved.

[0036] In an exemplary embodiment of the present disclosure, a static charge elimination device and a developing machine are provided, as shown in Figure 1 , Figure 1 is a schematic diagram of an electrode layout according to an exemplary embodiment; Figure 2 is a schematic diagram of an electrode shape according to an exemplary embodiment; Figure 3 is a schematic diagram of the relative position relationship between the adsorption wire and the electrode according to an exemplary embodiment;

[0037] Figure 4 is a schematic diagram of the relative position relationship between the electrode and the liquid supply pipeline according to an exemplary embodiment; Figure 5 is a schematic diagram of the relative position relationship between the electrode and the adsorption wire according to an exemplary embodiment; Figure 6 is a schematic diagram of the relative position relationship between the electrode and the adsorption wire according to another exemplary embodiment; Figure 7 is a schematic diagram of the relative position relationship between the electrode and the adsorption wire according to another exemplary embodiment. The following will be explained in combination with Figures 1 to 7 .

[0038] The specific embodiments described below are intended to be illustrative of the present embodiments and are not intended to limit the scope of the present embodiments.

[0039] With reference to Figure 1 , the electrostatic charge elimination device provided by an example embodiment of the present disclosure includes: a power supply assembly 1; a pulse module 3 electrically connected to the power supply assembly 1 and receiving power provided by the power supply assembly 1; and electrodes 5, at least two of which are connected to cathodes and anodes of the pulse module 3, respectively, and are arranged around a target position and used to conduct pulse signals of the pulse module 3 to the target position to form a pulse electric field filled in the target position.

[0040] With reference to Figure 1 , the pulse module 3 is a high-voltage pulse capacitor, the power supply assembly 1 is electrically connected to the high-voltage pulse capacitor and used to supply power to the high-voltage pulse capacitor, so that the pulse signals generated by the high-voltage pulse capacitor are conducted to the target position through the electrodes 5 and form a pulse electric field for ionizing the developing solution and the cleaning solution at the target position.

[0041] In the present embodiment, the pulse signals generated by the pulse module 3 form a pulse electric field at the target position through the electrodes 5, which can adsorb electrostatic charges around the electrodes 5 connected to the high-voltage pulse module 3, reduce the electrostatic charges carried by the developing solution in the target position area or flowing through the target position, and make the developing solution and the cleaning solution fall on the wafer surface to be coated uniformly, thereby achieving uniform line width and improving wafer yield.

[0042] With reference to Figure 1 , the electrodes 5 are at least two and are connected to cathodes and anodes of the pulse module 3, respectively, and the at least two electrodes 5 are arranged oppositely.

[0043] With reference to Figure 1 , the anode and the cathode of the high-voltage pulse capacitor as the pulse module 3 are fixedly connected with wires 31, one end of the wire 31 is fixedly connected with the anode (or the cathode) of the high-voltage pulse capacitor, and the other end is fixedly connected with the electrode 5, the two electrodes 5 forming electrical connections with the anode and the cathode of the high-voltage pulse capacitor are arranged oppositely, and a gap is left between the two electrodes 5. The power supply assembly 1 is electrically connected to the high-voltage pulse capacitor and supplies power to the high-voltage pulse capacitor, so that a pulse electric field is formed in the area between the two electrodes 5.

[0044] In this embodiment, the wires 31 are fixed to the anode and cathode of the high-voltage pulse capacitor by welding, and are fixed to the electrodes 5 by welding. The pulse signals emitted by the pulse module 3 are transmitted to the target position through the electrodes 5, and a pulse electric field capable of ionizing the developing solution and cleaning solution at the target position is formed between the two opposite electrodes 5, the electrostatic charge is adsorbed around the electrodes 5 connected to the high-voltage pulse module 3, the electrostatic charge carried by the developing solution in the target position area or flowing through the target position is reduced, so that the developing solution and cleaning solution can be evenly coated after falling on the wafer surface, thereby achieving uniform line width and improving wafer yield.

[0045] For example, when the developing solution and cleaning solution flow between the electrodes 5, the pulse electric field generated between the electrodes 5 can ionize the flowing developing solution and cleaning solution, so that the positive charge carried by the flowing developing solution and cleaning solution is adsorbed to the electrode 5 electrically connected to the negative electrode of the high-voltage pulse capacitor, and the negative charge carried by the flowing developing solution and cleaning solution is adsorbed to the electrode 5 electrically connected to the positive electrode of the high-voltage pulse capacitor, thereby reducing the charge generated by the friction between the developing solution and cleaning solution and the pipe wall, so that the developing solution and cleaning solution can be evenly coated after falling on the wafer surface, thereby achieving uniform line width and improving wafer yield.

[0046] It should be understood that the above-mentioned two electrodes 5 are oppositely arranged and have a gap between them for forming a pulse electric field, which is only one specific embodiment. In other embodiments, there can be multiple electrodes 5, for example, four electrodes 5, which are uniformly distributed around the target position, and one electrode 5 is electrically connected to the negative electrode of the high-voltage pulse capacitor, and the other three electrodes 5 are electrically connected to the positive electrode of the high-voltage pulse capacitor, which can also form a pulse electric field for ionizing the flowing developing solution and cleaning solution at the target position. In an exemplary embodiment of the present disclosure, referring to Figure 1 , the profile of the electrode 5 is columnar, and at least two electrodes 5 are arranged parallel to each other.

[0047] For example, referring to Figure 1 , the electrode 5 is a columnar electrode 5, the end of the wire 31 is fixedly connected to one end of the electrode 5, and the two electrodes 5 are oppositely arranged and arranged towards the same direction.

[0048] In the embodiment, the two electrodes 5 connected to the cathode and the anode of the high-voltage pulse capacitor respectively and parallel to each other can be regarded as two plates of the capacitor structure, and used to form an electric field at the square target position between the two electrodes 5. Compared with the two electrodes 5 arranged at an angle, the two electrodes 5 arranged parallel to each other have a larger facing area, that is, the capacitor of the capacitor structure formed by the two electrodes 5 is larger, and a larger pulse electric field can be formed in the region between the two electrodes 5, and the positive charges in the region between the two electrodes 5 are attracted and move to the electrode 5 connected to the negative electrode of the high-voltage pulse capacitor, and the negative charges in the region between the two electrodes 5 are attracted and move to the electrode 5 connected to the positive electrode of the high-voltage pulse capacitor, so that the static charges in the region are reduced. For example, when the developer and the cleaning solution flow between the two electrodes 5, the pulse electric field generated between the two electrodes 5 can ionize the developer and the cleaning solution flowing therebetween, so that the positive charges carried by the developer and the cleaning solution flowing therebetween are adsorbed to the electrode 5 connected to the negative electrode of the high-voltage pulse capacitor, and the negative charges carried by the developer and the cleaning solution flowing therebetween are adsorbed to the electrode 5 connected to the positive electrode of the high-voltage pulse capacitor, so that the charges generated by the developer and the cleaning solution due to the friction with the pipe wall are reduced, and the developer and the cleaning solution can be uniformly coated after falling on the wafer surface, thereby achieving uniform line width and improving the yield of the wafer.

[0049] In an example embodiment of the present disclosure, referring to Figure 2 , the profile of the electrode 5 is arc-shaped, and the electrode 5 is distributed circumferentially around the target position.

[0050] For example, referring to Figure 2 , the cross section of the electrode 5 is arc-shaped, that is, the solid structure of the electrode 5 is arc-shaped, and the electrode in the embodiment has two electrodes 5 arranged opposite to each other at the concave side, and used to form an electric field corresponding to the circular target position between the two electrodes 5.

[0051] It should be understood that the number of the electrode 5 described above can also be three, for example, three arc-shaped electrodes 5 are uniformly and spaced apart circumferentially around the circular target position.

[0052] In an example embodiment of the present disclosure, referring to Figure 1 and Figure 3 , the electrode 5 is electrically connected with an adsorption wire 51, the adsorption wire 51 extends continuously and undulates along the length direction of the electrode 5, and the end of the adsorption wire 51 corresponds to the end position of the electrode 5.

[0053] For example, the adsorption wire 51 is made of conductive metal material, for example, copper, the two ends of the adsorption wire 51 are fixed on the two ends of the electrode 5 respectively, and the adsorption wire 51 is bent in a w shape, and the length directions of the two adsorption wires 51 on the two electrodes 5 are parallel to each other.

[0054] In this embodiment, the two oppositely arranged adsorption wires 51 can be regarded as two plates of a capacitor structure, and the two adsorption wires 51 parallel to each other have a larger facing area than the two adsorption wires 51 arranged at an angle, that is, the capacitor formed by the two electrodes 5 has a larger capacitance, and the area between the two adsorption wires 51 can form a larger pulse electric field. The positive charges in the area between the two adsorption wires 51 are attracted and move to the adsorption wire 51 connected to the negative electrode of the high-voltage pulse capacitor, and the negative charges in the area between the two adsorption wires 51 are attracted and move to the adsorption wire 51 connected to the positive electrode of the high-voltage pulse capacitor, so that the static charge in the area is reduced. For example, when the developing solution and the cleaning solution flow between the aforementioned adsorption wires 51, the pulse electric field generated between the adsorption wires 51 can ionize the flowing developing solution and cleaning solution. The w-shaped bending adsorption wire can enhance the pulse electric field by the principle of sharp end discharge, so that the positive charges carried in the flowing developing solution and cleaning solution are adsorbed to the adsorption wire 51 connected to the negative electrode of the high-voltage pulse capacitor, and the negative charges carried in the flowing developing solution and cleaning solution are adsorbed to the adsorption wire 51 connected to the positive electrode of the high-voltage pulse capacitor. This reduces the charges generated by the friction between the developing solution and the cleaning solution and the pipe wall, so that the developing solution and the cleaning solution can be uniformly coated after falling on the wafer surface, thereby achieving uniform line width and improving wafer yield.

[0055] To make the pulse electric field formed between the adsorption wires 51 larger, the two ends of one adsorption wire 51 can correspond to the two ends of the other adsorption wire 51, that is, the two adsorption wires 51 are aligned in the direction perpendicular to the flow direction of the developing solution at the target position, so that the capacitor structure formed by the two adsorption wires 51 obtains the maximum facing area of the plates to obtain a larger pulse electric field, accelerate the ionization speed and intensity of the developing solution and the cleaning solution flowing through the target position, and reduce the charges generated by the friction between the developing solution and the cleaning solution and the pipe wall. This allows the developing solution and the cleaning solution to be uniformly coated after falling on the wafer surface, thereby achieving uniform line width and improving wafer yield.

[0056] It should be understood that the w-shaped bending of the adsorption wire 51 described above is only one specific embodiment, and in other embodiments, the bending portion can also be smooth and wavy.

[0057] In an example embodiment of the present disclosure, referring to Figure 1 and Figure 3 , a plurality of adsorption wires 51 are arranged on the same electrode 5 and spaced apart on the side of the electrode 5 facing the other electrode 5.

[0058] For example, six adsorption wires 51 are fixedly connected to the same electrode 5, the six adsorption wires 51 are located on the side of the electrode 5 facing the other electrode 5 and are spaced apart along the radial direction of the electrode 5, and the bottom edges of the six adsorption wires 51 are flush in the horizontal direction.

[0059] In the embodiment, the plurality of radially distributed adsorption filaments 51 on the same electrode 5 can increase the area of the metal region on the single electrode 5 used as a capacitor substrate, and further cooperate with the plurality of adsorption filaments 51 on the electrode 5 on the other side to form a plurality of independent capacitor structures, so as to achieve more complete ionization of the developing solution and the cleaning solution on the target position, reduce the possibility that the developing solution and the cleaning solution carrying static electricity fall on the wafer surface, and further cause uneven line width due to uneven coating, and finally cause the wafer to be scrapped.

[0060] It should be understood that the gap between the adjacent adsorption filaments 51 is only one specific embodiment, and in other embodiments, the adsorption filaments 51 are in close contact with each other to form a larger area of the capacitor plate on the electrode 5, obtain a larger capacitance, enhance the pulse electric field strength between the two adsorption filaments 51, achieve faster ionization of the developing solution and the cleaning solution on the target position, reduce the possibility that the developing solution and the cleaning solution carrying static electricity fall on the wafer surface, and further cause uneven line width due to uneven coating, and finally cause the wafer to be scrapped.

[0061] In an example embodiment of the present disclosure, referring to Figure 1 and Figure 4 , the electrode 5 is electrically connected with a grounding wire 52, and the grounding wire 52 is detachably connected with the electrode 5.

[0062] For example, one end of the grounding wire 52 is bolted to the end of the electrode 5, and the lead wire 31 and the grounding wire 52 are respectively fixed to different two ends of the electrode 5.

[0063] In the embodiment, the grounding wire 52 is used for grounding to release the static electricity collected around the electrode 5, so that the electrode 5 can continuously attract and collect the static electricity of the target position, reduce the possibility that the developing solution and the cleaning solution carrying static electricity fall on the wafer surface, and further cause uneven line width due to uneven coating, and finally cause the wafer to be scrapped.

[0064] In an example embodiment of the present disclosure, referring to Figure 4 , the power supply assembly 1 includes a connecting wire 13 for connecting an external electrical appliance, and the pulse module 3 is electrically connected with the external electrical appliance through the connecting wire 13, and the external electrical appliance supplies power to the pulse module 3.

[0065] For example, the external electrical appliance is electrically connected with and supplies power to the high-voltage pulse capacitor through the connecting wire 13, and the high-voltage pulse capacitor only needs to be connected to the external electrical appliance at the working position through the connecting wire 13 to work, without the need to prepare an independent power supply, which is convenient and light in weight.

[0066] In an example embodiment of the present disclosure, referring to Figure 1 and Figure 4The pulse module 3 is electrically connected with a rectifier module 2, the rectifier module 2 is connected with the power supply assembly 1 and is used for supplying the converted current to the pulse module 3.

[0067] For example, the rectifier module 2 includes a rectifier fixedly connected with the pulse module 3, the shell of the rectifier is bonded with the shell of the high-voltage pulse capacitor, and the rectifier is electrically connected with the high-voltage pulse capacitor, and the connecting line 13 is fixedly connected on the rectifier and is electrically connected with the rectifier.

[0068] In the embodiment, the alternating current of the external electrical appliance is conducted to the rectifier through the connecting line 13, and the alternating current is converted into direct current by the rectifier and is supplied to the high-voltage pulse capacitor. The rectifier module 2 greatly improves the applicability of the static charge elimination device described in the embodiment of the present disclosure, so that the pulse module 3 can be connected to the conventional electrical equipment. The alternating current used by the conventional electrical equipment is converted into direct current that can be used by the pulse module 3 through the rectifier module 2, thereby simplifying the installation and use difficulty of the static charge elimination device described in the embodiment of the present disclosure.

[0069] In the example embodiment of the present disclosure, referring to Figure 4 The pulse module 3 is fixedly provided with an insulation protective cover 4 covering the pulse module 3, the rectifier module 2 and the power supply assembly 1.

[0070] For example, the insulation protective cover 4 is a box body made of insulating plastic material, the insulation protective cover 4 is sleeved on the outside of the high-voltage pulse capacitor, the rectifier and the connecting line 13, the insulation protective cover 4 has an opening 41 for connecting the external electrical appliance, the lead wire 31 penetrates through the side wall of the insulation protective cover 4 and extends out of the small hole on the insulation protective cover 4 and is connected to the electrode 5.

[0071] In the embodiment, the opening 41 on the insulation protective cover 4 for connecting the external electrical appliance can be directly opposite to the external electrical appliance and is blocked by the outer wall of the external electrical appliance, so as to isolate the internal space of the insulation protective cover 4, reduce the possibility of affecting other devices at the working position when the pulse module 3 works, and reduce the possibility of external environment interfering with the pulse module 3, thereby improving the operation stability.

[0072] In a second aspect of the embodiment of the present disclosure, a developing machine is provided, referring to Figure 4 The developing machine includes the static charge elimination device described above.

[0073] For example, referring to Figure 4 The developing machine includes a machine box 11, the pulse module 3, the rectifier module 2, the connecting line 13, the insulation protective cover 4, the lead wire 31 and the electrode 5 are located inside the machine box 11, the opening 41 on the insulation protective cover 4 is directly opposite to the inner wall of the machine box 11, and the inner wall of the machine box 11 blocks the opening 41.

[0074] In the embodiment, the developing solution and the cleaning solution flow inside the case 11, and the pulse module 3, the rectifier module 2, the connecting wire 13, the insulation protective cover 4, the wire 31 and the electrode 5 are all arranged inside the case 11, which can make full use of the space of the working position and directly add devices on the basis of the existing developing machine, and the modification difficulty is low. The pulse signal emitted by the pulse module 3 is transmitted to the target position through the electrode 5, and a pulse electric field capable of ionizing the developing solution and the cleaning solution of the target position is formed between the two opposite electrodes 5. The static charge is adsorbed around the electrode 5 connected with the high-voltage pulse module 3, the static charge carried by the developing solution flowing through the target position is reduced, and the developing solution and the cleaning solution can be uniformly coated after falling on the wafer surface, so as to achieve the purpose of uniform line width and improve the wafer yield. That is, when the developing solution and the cleaning solution flow between the electrodes 5, the pulse electric field generated between the electrodes 5 can ionize the flowing developing solution and cleaning solution, the positive charge carried by the flowing developing solution and cleaning solution is adsorbed to the electrode 5 electrically connected with the negative electrode of the high-voltage pulse capacitor, and the negative charge carried by the flowing developing solution and cleaning solution is adsorbed to the electrode 5 electrically connected with the positive electrode of the high-voltage pulse capacitor, so as to reduce the charge generated by the friction between the developing solution and the cleaning solution and the pipe wall, so that the developing solution and the cleaning solution can be uniformly coated after falling on the wafer surface, thereby achieving the purpose of uniform line width and improving the wafer yield.

[0075] In an example embodiment of the present disclosure, referring to Figure 4 and Figure 5 , the developing machine has a liquid supply pipeline 6, and the electrode 5 has at least two, which is attached to the side wall of the liquid supply pipeline 6 and uniformly distributed along the circumference.

[0076] For example, the shape of the electrode 5 can be a long straight column as shown in Figure 1 , the long straight column-shaped electrode 5 is arranged on both sides of the liquid supply pipeline 6, or can be an arc shape as shown in Figure 2 , the concave side of the arc-shaped electrode 5 is opposite to the liquid supply pipeline and is arranged around the side wall of the liquid supply pipeline 6. The two opposite arc-shaped electrodes 5 can be spaced apart or connected at the side to form a tubular structure around the outside of the liquid supply pipeline 6. The liquid supply pipeline 6 is fixed inside the case 11, and the developing solution and the cleaning solution flow inside the liquid supply pipeline 6. The two electrodes 5 are fixed with adsorption wires 51, which are attached to the side wall of the liquid supply pipeline 6, and the two ends of the two opposite adsorption wires 51 correspond to each other.

[0077] In this embodiment, the adsorption wire 51 as the plate of the capacitor structure, and the two ends of the adsorption wire 51 correspond to each other to maximize the facing area of the plate, that is, the capacitance is maximum. When the developing solution and the cleaning solution flow between the electrodes 5, the pulse electric field generated between the electrodes 5 can ionize the flowing developing solution and cleaning solution, so that the positive charges carried in the flowing developing solution and cleaning solution are adsorbed to the electrode 5 electrically connected to the negative pole of the high-voltage pulse capacitor, and the negative charges carried in the flowing developing solution and cleaning solution are adsorbed to the electrode 5 electrically connected to the positive pole of the high-voltage pulse capacitor. The charges generated by the friction between the developing solution and the cleaning solution and the pipe wall are reduced, so that the developing solution and the cleaning solution can be uniformly coated after falling on the wafer surface, thereby achieving uniform line width and improving the yield of the wafer. It should be understood that one adsorption wire 51 can be fixed on the electrode 5, or multiple adsorption wires 51 can be fixed on the electrode 5, for example, referring to Figure 6 , the electrode 5 has two electrodes 5, and six adsorption wires 51 are fixed on each electrode 5. The opposite side of the two electrodes 5 is the working surface, and the six adsorption wires 51 on the same electrode 5 are uniformly and evenly distributed on the working surface of the electrode 5 along the radial direction of the electrode 5. Each adsorption wire 51 corresponds to one adsorption wire 51 on the other electrode 5, that is, six independent capacitor structures are formed between the two electrodes 5.

[0078] In other embodiments, referring to Figure 7 , the electrode 5 has four electrodes 5, and the two electrodes 5 on each side of the liquid supply pipeline 6 are arranged in pairs. The two electrodes 5 on the same side of the liquid supply pipeline 6 are evenly distributed, and each electrode 5 on one side of the liquid supply pipeline 6 corresponds to another electrode 5 on the other side of the liquid supply pipeline 6. Three adsorption wires 51 are fixed on the electrode 5, and each adsorption wire 51 corresponds to one adsorption wire 51 on another electrode 5 on the other side of the liquid supply pipeline 6. That is, six capacitor structures are formed between the four electrodes 5.

[0079] The adsorption wires 51 on the electrode 5 can be in contact with each other or be arranged at intervals. When the adsorption wires 51 on the same electrode 5 are in contact with each other, the multiple adsorption wires 51 arranged along the radial direction on the same electrode 5 can increase the area of the metal region on a single electrode 5 used to form a capacitor substrate, and then cooperate with the multiple adsorption wires 51 on the electrode 5 on the other side to form a capacitor structure with larger capacitance, so as to realize faster and more complete ionization of the developing solution and the cleaning solution at the target position, reduce the electrostatic charges carried by the developing solution and the cleaning solution falling on the wafer surface, and then cause uneven coating and lead to uneven line width, and finally cause the wafer to be scrapped.

[0080] When the adsorption filaments 51 on the same electrode 5 are arranged at intervals, the four electrodes 5 together form six independent capacitive structures, that is, the developer and the cleaning solution flowing through the target position can be ionized multiple times, reducing the possibility that the developer and the cleaning solution carrying static electricity fall on the wafer surface, and then cause uneven coating and ultimately cause the wafer to be scrapped.

[0081] In an example embodiment of the present disclosure, referring to Figure 4 , the electrode 5 extends along the length direction of the liquid supply pipeline 6.

[0082] For example, the liquid supply pipeline 6 includes a long straight section, and the electrode 5 is fixed to the long straight section and arranged along the length direction of the long straight section.

[0083] In the present embodiment, the electrode 5 is arranged to extend along the length direction of the liquid supply pipeline 6, which can make the electrode 5 and the adsorption filaments 51 arranged along the length direction of the electrode 5 adhere to the side wall of the liquid supply pipeline 6 with a larger area, that is, the pulse electric field formed by the two opposite electrodes 5 or the two opposite adsorption filaments 51 can ionize the developer and the cleaning solution flowing through the liquid supply pipeline 6 for a longer time. By increasing the ionization time of the developer and the cleaning solution flowing through the liquid supply pipeline 6, the removal effect of static electricity is improved, reducing the possibility that the developer and the cleaning solution carrying static electricity fall on the wafer surface, and then cause uneven coating and ultimately cause the wafer to be scrapped.

[0084] In an example embodiment of the present disclosure, referring to Figure 4 , the liquid supply pipeline 6 is provided with a nozzle 62 and a valve 61, and the electrode 5 is located on the pipe wall of the liquid supply pipeline 6 between the nozzle 62 and the valve 61.

[0085] For example, the nozzle 62 is located at the end of the liquid supply pipeline 6, the valve 61 is used to control the flow of the developer or the cleaning solution in the liquid supply pipeline 6, and the long straight section of the liquid supply pipeline 6 is located between the nozzle 62 and the valve 61, that is, the electrode 5 and the adsorption filaments 51 are both located on the pipe wall of the liquid supply pipeline 6 between the nozzle 62 and the valve 61.

[0086] In the present embodiment, the nozzle 62 is located at the end of the liquid supply pipeline 6, that is, the developer and the cleaning solution are coated on the wafer through the nozzle 62, and the electrode 5 used to remove static electricity in the developer and the cleaning solution is arranged at a position close to the nozzle 62. A pulse electric field for ionizing the developer and the cleaning solution can be formed between the two opposite electrodes 5. After the static electricity is adsorbed to the electrode 5 connected to the high-voltage pulse module 3, the flow path of the developer and the cleaning solution in the liquid supply pipeline 6 is reduced, and the possibility that new static electricity is generated in the developer and the cleaning solution flowing in the liquid supply pipeline 6 due to friction with the inner wall of the liquid supply pipeline 6 is reduced.

[0087] When the valve 61 is opened, the developing solution and the cleaning solution in the liquid supply pipeline 6 flow out through the nozzle 62, and the developing solution and the cleaning solution in the liquid supply pipeline 6 pass through the electrode 5 to remove the static electricity; when the valve 61 is closed, the developing solution and the cleaning solution in the liquid supply pipeline 6 behind the valve 61 are blocked by the valve 61 and no longer flow, and the developing solution and the cleaning solution in the liquid supply pipeline 6 between the valve 61 and the nozzle 62 still flow out from the nozzle 62 through the liquid supply pipeline 6. Therefore, the electrode 5 is arranged between the valve 61 and the nozzle 62, which can further reduce the possibility that the developing solution and the cleaning solution after removing the static electricity generate new static electricity due to friction with the inner wall of the liquid supply pipeline 6 when flowing in the liquid supply pipeline 6, so that the developing solution and the cleaning solution can be uniformly coated after falling on the wafer surface, thereby achieving uniform line width and improving the yield of the wafer.

[0088] In an example embodiment of the present disclosure, referring to Figure 4 , the pulse module 3 is electrically connected with the developing machine, and the power supply assembly 1 includes the developing machine, and the developing machine supplies power to the pulse module 3.

[0089] For example, the developing machine has a power adapter 12 located inside a machine box 11, one end of a connecting line 13 is connected with the power adapter 12, and the other end is connected with a rectifier module 2, the rectifier module 2 is a rectifier, the pulse module 3 is a high-voltage pulse capacitor, the outer wall of the rectifier is fixed on the outer wall of the high-voltage pulse capacitor, and the rectifier is electrically connected with the high-voltage pulse capacitor. The high-voltage pulse capacitor is electrically connected with the power adapter 12 of the developing machine through the connecting line 13, and obtains the power required for work through the power adapter 12.

[0090] In the embodiment, the insulation protective cover 4 is sleeved outside the power adapter 12, and the insulation protective cover 4 covers the power adapter 12. The opening 41 on the insulation protective cover 4 covers the power adapter 12, realizes the isolation of the internal space of the insulation protective cover 4, and achieves the purpose of reducing the possibility that other devices in the working position are affected when the pulse module 3 works, and also reduces the possibility of short circuit of the pulse module 3 when the liquid supply pipeline 6 is damaged and leaks.

[0091] In an example embodiment of the present disclosure, referring to Figure 4 , the developing machine includes a grounded machine box 11, and a grounding wire 52 is detachably connected to the electrode 5 and arranged on the machine box 11.

[0092] For example, the machine box 11 is grounded, one end of the grounding wire 52 is fixed to the end of the electrode 5, and the other end is arranged on the machine box 11.

[0093] In this embodiment, the ground wire 52 is used for grounding, releasing the static electricity gathered around the electrode 5, so that the electrode 5 can continuously attract and gather the static electricity of the target position, reducing the possibility of the passing developing solution and cleaning solution carrying the static electricity to fall on the wafer surface, further causing the line width uneven due to uneven coating, and finally causing the wafer to be scrapped.

[0094] Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the features disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the disclosure being indicated by the following claims.

[0095] It should be understood that the present disclosure is not limited to the precise structures herein described and illustrated in the drawings, and that various modifications and changes can be made without departing from its scope. The scope of the present disclosure is limited only by the claims that follow.

Claims

1. An electrostatic charge eliminating device, characterized by comprising: The static charge elimination device comprises: a power supply assembly; a pulse module electrically connected to the power supply assembly and receiving power supplied by the power supply assembly; electrodes, at least two of which are connected to cathodes and anodes of the pulse module respectively, and are arranged around a target position and used to conduct pulse signals of the pulse module to the target position to form a pulse electric field filled in the target position; adsorptive filaments electrically connected to the electrodes, which extend continuously in a w shape along a length direction of the electrodes, and whose end portions correspond to end portions of the electrodes; a plurality of adsorptive filaments are arranged on the same electrode, and are distributed on a side of the electrode facing other electrodes; two end portions of each adsorptive filament correspond to two end portions of another adsorptive filament respectively; and each adsorptive filament corresponds to a position of one adsorptive filament on another electrode.

2. The electrostatic charge eliminating device according to claim 1, wherein The electrodes are columnar in profile, and at least two of the electrodes are arranged in parallel to each other.

3. The electrostatic charge eliminating device according to claim 1, wherein The electrodes are arc-shaped in profile, and are distributed circumferentially around the target position.

4. The electrostatic charge eliminating device according to claim 1, wherein A grounding wire is electrically connected to the electrodes, and is detachably connected to the electrodes.

5. The electrostatic charge eliminating device according to claim 1, wherein The power supply assembly comprises a connecting wire for connecting an external electrical appliance, the pulse module is electrically connected to the external electrical appliance through the connecting wire, and the external electrical appliance supplies power to the pulse module.

6. The electrostatic charge eliminating device according to claim 1, wherein The pulse module is electrically connected to a rectifier module, the rectifier module is connected to the power supply assembly and used to supply converted current to the pulse module.

7. The electrostatic charge eliminating device according to claim 6, wherein An insulating protective cover is fixedly arranged on the pulse module to cover the pulse module, the rectifier module and the power supply assembly.

8. A developing station, characterized by, The developing machine comprises the static charge elimination device according to any one of claims 1-7.

9. The developing device according to claim 8, wherein The developing machine has a liquid supply pipeline, and the electrodes are at least two, and are attached to side walls of the liquid supply pipeline and are uniformly distributed circumferentially.

10. The developing device according to claim 9, wherein The electrodes extend along a length direction of the liquid supply pipeline.

11. The developing device according to claim 9, wherein A nozzle and a valve are arranged on the liquid supply pipeline, and the electrodes are located on a pipe wall of the liquid supply pipeline between the nozzle and the valve.

12. The processor of claim 8, wherein the processor is further configured to: The pulse module is electrically connected to the developing machine, the power supply assembly comprises the developing machine, and the developing machine supplies power to the pulse module.

13. The processor of claim 8, wherein the processor is further configured to: The developing machine comprises a grounded machine case, and the electrodes are detachably connected to grounding wires, and the grounding wires are arranged on the machine case.

Images