Ion output monitoring device, monitoring method and ion implantation device

Abstract

The present application discloses an ion output monitoring device, an ion implantation device, an ion output monitoring method, and an electronic device. A magnetic force generating device is provided between a plasma generating device and an electron beam monitoring device. The direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the direction of movement of negative electrons, and is used to deflect negative electrons that have not reacted with the electron beam, so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, wherein the negative electrons are generated by the plasma generating device. Thus, on the basis of avoiding affecting the electron beam path, weak magnetic force is utilized to deflect the negative electrons, effectively solving the problem of negative electron backflow. At the same time, the magnetic force generating device is provided in an empty area of ​​the machine, which can achieve convenient and barrier-free installation without affecting the overall operation of the existing machine.

Description

Technical Field

[0001] The present application relates to the technical field of ion implantation, and in particular to an ion output monitoring device, an ion implantation device, an ion output monitoring method, and an electronic device. Background Art

[0002] Plasma (negative electrons) neutralizes the positive electrons in the electron beam, ultimately neutralizing the ions injected into the wafer. Plasma is a key performance indicator in ion implantation. Plasma is generated by a PFG (Plasma Flood Gun) through a filament powered by electricity, producing a large amount of plasma. In actual production, to completely neutralize positively charged ions, the PFG is typically designed to provide plasma at supersaturation. This means that the amount of plasma provided by the PFG is often greater than that required by the beam, with the beam determining the amount of plasma required for neutralization.

[0003] However, there is currently no effective method for measuring plasma levels. If PFG generates a large amount of plasma, a large number of negative electrons will be present in the ion implantation space, significantly affecting the beam measurement at the front end of the instrument, leading to significant measurement deviations. If a PFG problem results in insufficient plasma supply, a large amount of positive charge will accumulate on the wafer, significantly affecting the characteristics of the electronic device and, in severe cases, rendering the device useless. Summary of the Invention

[0004] In order to solve the above problems, the embodiments of the present application provide an ion output monitoring device, an ion implantation device, an ion output monitoring method and an electronic device.

[0005] According to the first aspect of the present application, an ion output monitoring device is provided, which includes: a magnetic force generating device, which is arranged between a plasma generating device and an electron beam monitoring device, and the direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the movement direction of negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, and the negative electrons are generated by the plasma generating device.

[0006] According to one embodiment of the present application, the magnetic force generating device includes: two magnets with different magnetic poles; and graphite disposed between the two magnets.

[0007] According to one embodiment of the present application, the magnetic force generating device further includes: an insulator, which is arranged on the outside of the magnet and is used to fix the magnetic force generating device.

[0008] According to one embodiment of the present application, the device further includes: a current monitoring device connected to the magnetic force generating device, for monitoring changes in current generated by the magnetic force generating device.

[0009] According to one embodiment of the present application, the device further includes: a control device connected to the current detection device, for determining whether the amount of the negative electrons generated by the plasma generating device is normal based on the current change.

[0010] According to one embodiment of the present application, the control device is further configured to control the ion implantation device to shut down and issue a reminder when the amount of the negative electrons generated by the plasma generating device is abnormal.

[0011] According to the second aspect of the present application, an ion implantation device is also provided, and the ion implantation device includes the above-mentioned ion output monitoring device.

[0012] According to the third aspect of the present application, a method for monitoring ion output is also provided, the method comprising: monitoring current changes generated by a magnetic force generating device, the magnetic force generating device being arranged between a plasma generating device and an electron beam monitoring device, the direction of the magnetic flux lines generated by the magnetic force generating device being perpendicular to the direction of movement of negative electrons, and being used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, the negative electrons being generated by the plasma generating device; and determining whether the amount of the negative electrons generated by the plasma generating device is normal based on the current changes.

[0013] According to one embodiment of the present application, determining whether the amount of negative electrons generated by the plasma generating device is normal based on the current change includes: when the current change is greater than a first set threshold, determining that the amount of negative electrons generated by the plasma generating device is abnormal, and the current change is the difference between the current value generated by the magnetic generating device and the preset current value.

[0014] According to the fourth aspect of the present application, an electronic device is also provided, which includes at least one processor, and at least one memory and a bus connected to the processor; wherein the processor and the memory communicate with each other through the bus; the processor is used to call the program instructions in the memory to execute the above-mentioned ion output monitoring method.

[0015] In the ion output monitoring device, ion implantation device, ion output monitoring method, and electronic device of the embodiments of the present application, a magnetic force generating device is provided between the plasma generator and the electron beam monitoring device. The direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the direction of motion of the negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam, so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generator, wherein the negative electrons are generated by the plasma generator. Thus, on the basis of avoiding affecting the electron beam path, weak magnetic force is utilized to deflect the negative electrons, effectively solving the plasma backflow problem. At the same time, the magnetic force generating device is provided in an unoccupied area of ​​the machine, which can achieve convenient and barrier-free installation without affecting the overall operation of the existing machine.

[0016] It should be understood that the teachings of this application do not necessarily achieve all of the beneficial effects described above, but that specific technical solutions can achieve specific technical effects, and other embodiments of this application can also achieve beneficial effects not mentioned above. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other objects, features and advantages of the exemplary embodiments of the present application will become readily understood by reading the detailed description below with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present application are shown in an illustrative and non-limiting manner, in which:

[0018] In the drawings, the same or corresponding reference numerals denote the same or corresponding parts.

[0019] Figure 1 The basic structure and working principle of PFG are shown;

[0020] Figure 2 The positional relationship between faraday and PFG is shown;

[0021] Figure 3 A schematic diagram showing the position of a magnetic force generating device of an ion output monitoring device according to an embodiment of the present application is shown;

[0022] Figure 4 A schematic diagram showing the composition and structure of a magnetic force generating device of an ion output monitoring device according to an embodiment of the present application is shown;

[0023] Figure 5 The left-hand rule is shown;

[0024] Figure 6 An exemplary diagram showing the principle of preventing plasma backflow by the ion output monitoring device according to an embodiment of the present application is shown;

[0025] Figure 7 A schematic diagram showing the principle of monitoring ion output by the ion output monitoring device according to an embodiment of the present application;

[0026] Figure 8 The following is a schematic diagram showing the implementation process of the ion output monitoring method according to an embodiment of the present application;

[0027] Figure 9 A schematic diagram of the structure of an electronic device according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0028] The principles and spirit of the present application will be described below with reference to several exemplary embodiments. It should be understood that these embodiments are provided solely to enable those skilled in the art to better understand and implement the present application, and are not intended to limit the scope of the present application in any way. Rather, these embodiments are provided to make the present application more thorough and complete, and to fully convey the scope of the present application to those skilled in the art.

[0029] The technical solution of the present application is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0030] In order to better illustrate the technical solution of the present application, the basic structure and working principle of PFG (Plasma Flood Gun) are first briefly introduced here. In the embodiments of the present application, PFG is also referred to as a plasma generating device.

[0031] Figure 1 A schematic diagram showing the basic structure and working principle of PFG.

[0032] refer to Figure 1 During the semiconductor device manufacturing process, PFG generates negative electrons that neutralize the positive electrons in the electron beam. This ensures that the ions injected into the wafer are electrically neutral. Throughout the process, the beam is monitored using an electron beam monitoring device, such as a Faraday.

[0033] However, if the negative electrons produced by the PFG exceed the negative electrons required to neutralize the positrons in the beam, the negative electrons will fill the cavity where the positrons in the entire beam react with the negative electrons produced by the PFG. Figure 2 As shown, the positional relationship between Faraday and PFG is shown. Figure 2 If there are too many negative electrons, they will fill the entire cavity and enter the faraday, neutralizing the positive ions that the faraday needs to monitor, causing deviations in the faraday measurement. Since the faraday is a key device for measuring beam parameters, and beam parameters are crucial for wafer implantation, this will lead to large deviations in the wafer implant amount and further cause serious device quality problems.

[0034] To address the above-mentioned issues, embodiments of the present application provide an ion output monitoring device, comprising a magnetic force generator disposed between a plasma generator and an electron beam monitoring device. The magnetic force generator generates magnetic flux lines perpendicular to the direction of motion of negative electrons, thereby deflecting negative electrons that have not reacted with the beam away from the electron output terminal of the plasma generator. The negative electrons are generated by the plasma generator.

[0035] Figure 3 A schematic diagram showing the position of a magnetic force generating device of an ion output monitoring device according to an embodiment of the present application is shown.

[0036] like Figure 3 As shown, the magnetic generating device 10 of the ion output monitoring device of the embodiment of the present application can be installed Figure 3 The position of the magnetic force generator 10 is shown in FIG. Here, the plasma generator is shown as PFG, and the electron beam monitoring device is shown as Faraday. The entire beam passes through the magnetic force generator 10 of the ion output monitoring device of the embodiment of the present application, and the ion output monitoring device 10 of the embodiment of the present application has no effect on the beam path.

[0037] In this embodiment of the present application, the magnetic force generating device 10 includes two magnets with different magnetic poles and graphite disposed between the two magnets.

[0038] Figure 4 The figure shows the composition structure diagram of the magnetic force generating device of the ion output monitoring device of the embodiment of the present application. Figure 4 , two magnets 401 with different magnetic poles are shown as N and S. The magnet 401 can be a permanent magnet or an electromagnet. The direction of the magnetic flux generated by the magnet 401 is as follows Figure 4 As shown, a horizontal magnetic flux can be generated. The magnet 401 is surrounded by graphite 402.

[0039] In this embodiment of the present application, the Figure 5 The left-hand rule shown in Figure 1 shows that charged particles are deflected while moving in the magnetic field of the magnetic force generating device of the ion output monitoring device of the present application embodiment. The magnetic flux lines generated by the magnetic force generating device of the ion output monitoring device of the present application embodiment are perpendicular to the direction of motion of the negative electrons, and can deflect the negative electrons that have not reacted with the beam, moving them away from the electron output terminal of the plasma generator.

[0040] In this embodiment of the present application, the magnets 401 at both ends of the magnetic generating device 10 of the ion output monitoring device of the present embodiment are permanent magnets or electromagnets, and both permanent magnets or electromagnets are weak magnetic. When the magnetic flux B of the magnetic generating device 10 is greater than K / D, it is considered that electrons will not pass through the magnetic generating device. Where K is a known constant and D is the width of the magnetic generating device. You can return to the reference Figure 3 The width of the magnetic force generating device 10 is described below. K and why it is considered that electrons will not pass through the magnetic force generating device 10 when B>K / D.

[0041] In order to ensure safety and reliability, in this embodiment of the present application, the magnetic flux B of the magnetic force generating device 10 is set to be greater than 2 times K / D. Since the K value is very small, the effect on positive ions can be ignored. Even when the K value is magnified 1000 times, it will not affect the positive ions. Therefore, according to the safety and reliability requirements of not having a substantial impact on the path of positive ions, the embodiment of the present application determines that the range of the magnetic flux B of the magnetic force generating device is set to 2K / D. <B<10005 / D。

[0042] Specifically, when a charged particle passes through a magnetic field region, it will be deflected by the Lorentz force within a radius R = mv / Bq.

[0043] Where R is the deflection radius, which can be defined here as the width D of the magnetic force generating device;

[0044] m is the mass of the electron 9.10956×10-31kg;

[0045] q is the electron charge 1.602189×10-19 coulomb;

[0046] V is the speed of electrons, which is determined by the PFG and is a constant value (different types of PFGs have different speeds of electrons, but all are constant values).

[0047] Therefore, B = (m / q) * (V / R) = 5.7 * 10-12 * (V / D). Since V is a constant, we can set K = V * 5.7 * 10-12, and the magnetic flux B can be expressed as B = K / D.

[0048] Figure 6 The schematic diagram shows the principle of the ion output monitoring device of the embodiment of the present application to prevent plasma backflow. Figure 6 After the plasma (negative electrons) generated by the plasma generator PFG passes through the ion output monitoring device of the embodiment of the present application, they are deflected by the magnetic field and finally neutralized by graphite, fundamentally avoiding the influence of plasma backflow on the beam measurement value.

[0049] In this embodiment of the present application, the magnetic force generating device 10 further includes an insulator 403. Figure 7 FIG. 1 is a schematic diagram showing the position of the insulator 403 on the magnetic force generating device 10 of the ion output monitoring device of the embodiment of the present application. The insulator 403 is arranged on the outside of the magnet 401 and is used to fix the magnetic force generating device.

[0050] Figure 7 A schematic diagram showing the principle of monitoring ion output by the ion output monitoring device according to an embodiment of the present application is shown.

[0051] refer to Figure 7 In this embodiment of the present application, the ion output monitoring device of the present application embodiment further includes a current monitoring device 71. The current monitoring device 71 and the magnetic force generating device ( Figure 7 The current monitoring device 71 is used to monitor the current changes generated by the magnetic force generating device 10.

[0052] In this embodiment of the present application, the ion output monitoring device of the embodiment of the present application also includes a control device (not shown in the figure), which is connected to the current detection device 71 and is used to determine whether the amount of negative electrons generated by the plasma generating device is normal based on the current change.

[0053] like Figure 7 As shown, the current detection device 71 can be an ammeter A. The graphite 402 of the magnetic force generator can be connected to the beam path via an insulator 403, isolating the magnetic force generator from the entire cavity. The entire graphite 402 is connected to the ammeter A. For every negative electron neutralized by the graphite, a positive electron passes through the ammeter A. The large number of neutralized negative electrons causes the ammeter to generate a current I.

[0054] In this embodiment of the present application, the control device is also used to control the ion implantation device to shut down and issue a reminder when the amount of negative electrons generated by the plasma generator is abnormal.

[0055] Specifically, since the current I is generated by reverse negative electrons, and the number of reverse negative electrons is related to the beam size and energy and the total amount of plasma emitted by the PFG, for the same recipe (same beam size and energy), when it is determined that the negative electrons generated by the PFG just meet the requirement of the negative electron amount required to neutralize the positrons in the beam, the normal current I0 during normal operation can be detected, recorded, and set.

[0056] When a beam is emitted and the PFG is operating, the ion output monitoring device of the present embodiment monitors the current value I in real time and compares it with the normal current I0. If the difference between the two is less than or equal to 10% of I0, the PFG is considered to be operating normally. If the difference is greater than 10% of I0, the PFG is considered to be operating abnormally, and a reminder message can be issued to prompt the machine to be inspected, and an alarm can be issued using text, a buzzer, or voice.

[0057] In the embodiments of the present application, the ion output monitoring device of the present application is also referred to as a PSMS (Plasma Suppression and Monitor System). It can effectively solve the problem of plasma backflow without affecting the beam path. At the same time, by real-time monitoring of the current generated by electrons neutralized in graphite and comparing it with the current of the current monitoring device when the PFG is set to operate normally, real-time monitoring of the amount of plasma (negative electrons) generated by the PFG is achieved. Furthermore, the ion output monitoring device of the present application can be set up in an unoccupied area of ​​the machine, seamlessly connected to the machine, and the solution is convenient and barrier-free to implement, with no impact on the entire machine.

[0058] In the ion output monitoring device, ion implantation device, ion output monitoring method, and electronic device of the embodiments of the present application, a magnetic force generating device is provided between the plasma generator and the electron beam monitoring device. The direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the direction of motion of the negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generator, wherein the negative electrons are generated by the plasma generator. Thus, while avoiding affecting the electron beam path, weak magnetic force is utilized to deflect the negative electrons, effectively solving the plasma backflow problem. At the same time, the magnetic force generating device is provided in an unoccupied area of ​​the machine, which allows for convenient and barrier-free installation without affecting the overall operation of the existing machine.

[0059] Similarly, based on the above ion output monitoring device, an ion implantation device is also provided, and the ion implantation device includes the above ion output monitoring device.

[0060] Furthermore, based on the above ion output monitoring device, a method for monitoring ion output is also provided, such as Figure 8As shown, the method includes: operation 801, monitoring the current change generated by the magnetic force generating device, the magnetic force generating device is arranged between the plasma generating device and the electron beam monitoring device, the direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the movement direction of the negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, and the negative electrons are generated by the plasma generating device; operation 802, determining whether the amount of negative electrons generated by the plasma generating device is normal based on the current change.

[0061] In this embodiment of the present application, whether the amount of negative electrons generated by the plasma generating device is normal is determined based on the current change, including: when the current change is greater than a first set threshold, it is determined that the amount of negative electrons generated by the plasma generating device is abnormal, and the current change is the difference between the current value generated by the magnetic generating device and the preset current value.

[0062] Furthermore, based on the above ion output monitoring method, the present application embodiment also provides an electronic device, such as Figure 9 As shown, the device 90 includes at least one processor 901, and at least one memory 902 and a bus 903 connected to the processor 901; wherein, the processor 901 and the memory 902 communicate with each other through the bus 903; the processor 901 is used to call the program instructions in the memory 902 to execute the above-mentioned ion output monitoring method.

[0063] Furthermore, based on the above ion output monitoring method, an embodiment of the present application also provides a computer-readable storage medium, which stores a program. When the program is executed by the processor, the processor performs at least the following operation steps: operation 801, monitoring the current changes generated by the magnetic generating device, the magnetic generating device is arranged between the plasma generating device and the electron beam monitoring device, the direction of the magnetic flux lines generated by the magnetic generating device is perpendicular to the movement direction of the negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, and the negative electrons are generated by the plasma generating device; operation 802, based on the current changes, determining whether the amount of negative electrons generated by the plasma generating device is normal.

[0064] It should be noted that the above description of the embodiments of the ion implantation device, the ion output monitoring method and the electronic device is different from the above description of the embodiments of the ion implantation device, the ion output monitoring method and the electronic device. Figures 1 to 7 The description of the embodiment of the ion output monitoring device shown is similar, with the same Figures 1 to 7The ion output monitoring device embodiment shown in the figure has similar beneficial effects, so it will not be described in detail. For technical details not disclosed in the embodiments of the ion implantation device, ion output monitoring method and electronic device of this application, please refer to the aforementioned Figures 1 to 7 The description of the embodiment of the ion output monitoring device shown in FIG. 1 is understood and will not be repeated for the sake of space.

[0065] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0066] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of units is merely a logical function division. In actual implementation, there may be other division methods, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of devices or units can be electrical, mechanical or other forms.

[0067] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed across multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the scheme of this embodiment.

[0068] In addition, all functional units in the embodiments of the present application can be integrated into one processing unit, or each unit can be a separate unit, or two or more units can be integrated into one unit; the above-mentioned integrated units can be implemented in the form of hardware or in the form of hardware plus software functional units.

[0069] Those skilled in the art will understand that all or part of the steps of implementing the above-mentioned method embodiment can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above-mentioned method embodiment; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM), magnetic disks or optical disks, and other media that can store program codes.

[0070] Alternatively, if the above-mentioned integrated unit of the present application is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present application is essentially or the part that contributes to the prior art can be embodied in the form of a software product, which is stored in a storage medium and includes a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the methods of each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROMs, magnetic disks, or optical disks.

[0071] The above are only specific embodiments of the present application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An ion output monitoring device, characterized in that: The device comprises: A magnetic force generating device is provided between the plasma generating device and the electron beam monitoring device, wherein the direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the direction of movement of the negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, and the negative electrons are generated by the plasma generating device; The magnetic force generating device comprises: Two magnets with different poles; Graphite, disposed between the two magnets; The magnetic induction intensity of the magnetic force generating device is B, 2K / D<B<1000K / D, where K=(m / q)*V=V*5.7*10 -12 , m represents the mass of the negative electron, q represents the charge of the negative electron, V represents the velocity of the negative electron, and D represents the width of the magnetic force generating device.

2. The device according to claim 1, characterized in that The magnetic force generating device further includes: an insulator, which is arranged on the outside of the magnet and is used to fix the magnetic force generating device.

3. The device according to claim 1, characterized in that The device further comprises: A current monitoring device is connected to the magnetic force generating device and is used to monitor the current changes generated by the magnetic force generating device.

4. The device according to claim 3, characterized in that The device further comprises: The control device is connected to the current monitoring device and is used to determine whether the amount of the negative electrons generated by the plasma generating device is normal based on the current change.

5. The device according to claim 4, characterized in that The control device is also used to control the ion implantation device to shut down and issue a reminder when the amount of the negative electrons generated by the plasma generating device is abnormal.

6. An ion implantation device, characterized in that: The ion implantation device comprises the ion output monitoring device according to any one of claims 1 to 5.

7. A method for monitoring ion output, characterized in that: Used to monitor whether the amount of negative electrons generated by the plasma generating device is normal based on the ion output monitoring device according to any one of claims 1 to 5; The method comprises: Monitoring current changes generated by a magnetic force generating device, wherein the magnetic force generating device is disposed between the plasma generating device and the electron beam monitoring device, wherein the direction of the magnetic flux lines generated by the magnetic force generating device is perpendicular to the direction of motion of the negative electrons, and is used to deflect the negative electrons that have not reacted with the electron beam so that the negative electrons that have not reacted with the electron beam are away from the electron output end of the plasma generating device, wherein the negative electrons are generated by the plasma generating device; According to the current change, it is determined whether the amount of the negative electrons generated by the plasma generating device is normal.

8. The method according to claim 7, wherein determining whether the amount of negative electrons generated by the plasma generating device is normal based on the current change comprises: When the current change is greater than a first set threshold, it is determined that the amount of the negative electrons generated by the plasma generating device is abnormal, and the current change is the difference between the current value generated by the magnetic generating device and a preset current value.

9. An electronic device comprising at least one processor, and at least one memory and bus connected to the processor; wherein: The processor and the memory communicate with each other via the bus; The processor is used to call the program instructions in the memory to execute the ion output monitoring method according to claim 7 or 8.

Images