A van der Waals epitaxial growth method for high-quality AlGaN materials on amorphous substrates

Abstract

This invention provides a van der Waals epitaxial method for high-quality AlGaN material on an amorphous substrate, belonging to the field of semiconductor technology. The method includes the following steps: transferring a first two-dimensional material layer onto an amorphous substrate and processing it; transferring a second two-dimensional material layer onto the processed first two-dimensional material layer and performing hydrogen passivation treatment; forming a two-dimensional AlGaN material prefabricated layer between the first and second two-dimensional material layers through van der Waals epitaxial growth; and forming a three-dimensional AlGaN material thin film on the second two-dimensional material layer using a two-step homogeneous van der Waals epitaxial growth method. This invention uses two two-dimensional material layers to further mitigate the influence of the amorphous substrate on the epitaxial layer, significantly reducing stress and dislocations, improving crystal quality, and facilitating the large-area application of AlGaN-based optoelectronic devices. It has advantages such as simple process, significant effect, and broad application prospects.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate. Background Art

[0002] In the field of optoelectronic devices, AlGaN materials are widely used because of their adjustable bandgap from 3.4eV to 6.2eV and wide wavelength coverage. Among them, AlGaN materials with high Al content have the advantages of direct bandgap, large bandgap, high breakdown voltage, high chemical stability, and high thermal stability. Therefore, they are suitable for high-voltage, high-power devices, high-speed and high-frequency devices, and ultraviolet optoelectronic devices. They have great application potential in integrated circuit lithography, ultraviolet curing, day-blind ultraviolet detection, sterilization, health care, and other fields. There are many methods for preparing AlGaN materials, such as metal organic vapor deposition (MOCVD), molecular beam epitaxy (MBE), physical vapor deposition (PVD), and physical vapor transport (PVT). Considering the growth cost, epitaxy time, and material quality, MOCVD has become the mainstream method for scientific research and industrial manufacturing. However, when growing AlGaN materials, especially high Al content materials, the existing MOCVD growth of GaN epitaxial process is not effective. Due to the difficulty in material growth, it is difficult to use homogeneous substrates for epitaxy. The lattice mismatch and thermal mismatch in heterogeneous epitaxy prevent the stress of the epitaxial layer from being effectively released, resulting in many defects in the early stage of epitaxy and the inability to grow high-quality films. Compared with Ga atoms, Al atoms are more difficult to migrate during the growth process, and island growth is prone to occur on the surface of the sample, affecting the flatness of the growing film. With the increase of the Al component, the crystal quality decreases significantly, and the epitaxial layer with a high Al component is also prone to cracking and limited in thickness. In addition, the residual stress in the material also affects the band structure of the material, resulting in the movement of the device's luminescence peak and absorption peak. Dislocation defects in the material are prone to non-radiative recombination, leakage current and other problems, which also affect the device performance. Material quality issues have greatly limited the application of AlGaN-based optoelectronic devices.

[0003] The van der Waals epitaxial growth method uses a new type of two-dimensional material as an insertion layer to epitaxially grow nitride materials, opening up a new epitaxial growth path for AlGaN-based semiconductor materials. The intralayer structure of the two-dimensional material is a strong bonding lattice formed by covalent bonds or ionic bonds; while the two-dimensional material layers, the two-dimensional material and the substrate, and the two-dimensional material and the epitaxial layer interact with each other by weak van der Waals forces. Therefore, during the epitaxial process, the stress of the substrate on the epitaxial layer will only cause the slip of the two-dimensional material; the defect dislocations of the substrate and the interface are difficult to enter the epitaxial layer, the lattice mismatch and thermal mismatch between the epitaxial layer and the substrate are significantly reduced, the residual stress in the epitaxial layer is greatly reduced, and the quality of the epitaxially grown material is improved.

[0004] In addition to improving material quality, van der Waals epitaxy can also be used to achieve epitaxial growth of special structures, such as the growth of two-dimensional AlGaN materials. On a van der Waals substrate consisting of a two-dimensional material and a substrate that is easy to bond, the van der Waals substrate is hydrogenated to passivate the two-dimensional material and form a transport channel, and then the source of the AlGaN material is introduced. Since metal atoms or N atoms are easily adsorbed and bonded on the substrate, two-dimensional AlGaN material is eventually grown between the two-dimensional material and the substrate.

[0005] There is still much room for development in the research of van der Waals epitaxial growth of nitrides. At present, there are two main directions in the research of van der Waals epitaxy of nitrides: one is to use two-dimensional materials to shield the influence of the substrate on the epitaxial layer, and only rely on the van der Waals force between the two-dimensional material and the epitaxial layer to achieve narrow van der Waals epitaxy; the other is to use the van der Waals substrate composed of two-dimensional materials and substrates, and rely on the combined effect of the van der Waals force between the two-dimensional material and the epitaxial layer and the strong bond between the substrate and the epitaxial layer to achieve broad van der Waals epitaxy. Van der Waals epitaxy of nitrides fully utilizing the van der Waals interaction between two-dimensional materials and epitaxial layers relies on two-dimensional materials to regulate the epitaxial growth process, and may not even need to consider the crystallization quality of the substrate. Therefore, it is expected to achieve high-quality epitaxy on amorphous substrates, but it requires extremely high-quality two-dimensional materials, and has extremely high requirements for the growth and transfer of two-dimensional materials, which makes it difficult to use in industrial applications. Van der Waals epitaxy achieved by utilizing the composite regulation of two-dimensional materials and substrates in van der Waals substrates, the composite connection of chemical bonds and van der Waals bonds, can better regulate the nucleation growth process of the epitaxial layer, but the quality of the substrate and two-dimensional materials greatly affects the quality of the epitaxial layer, and therefore is mostly used for van der Waals epitaxy on single crystal substrates.

[0006] Therefore, it is urgent to study a van der Waals epitaxial growth method for high-quality AlGaN materials on amorphous substrates to overcome the difficulties of random epitaxial growth orientation and nucleation on amorphous substrates, while reducing the stress on the epitaxial layer and the dislocation density to achieve the growth of high-quality AlGaN materials. Summary of the invention

[0007] Therefore, in order to solve the above technical problems, the present invention proposes a van der Waals epitaxial method for high-quality AlGaN material on an amorphous substrate, which utilizes a double-layer two-dimensional material to grow a two-dimensional AlGaN material prefabricated layer on an amorphous substrate, and on this basis realizes a homogeneous van der Waals epitaxial method for high-quality AlGaN material. Through a two-step growth process, the difficulties of random orientation and nucleation of epitaxial growth on an amorphous substrate are overcome, and at the same time, the two-layer two-dimensional material greatly reduces the stress on the epitaxial layer and reduces the dislocation density.

[0008] To achieve the above object, the present invention provides a van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate, comprising the following steps:

[0009] transferring a first two-dimensional material layer on an amorphous substrate;

[0010] Processing the first two-dimensional material layer to improve the epitaxial growth conditions of the amorphous substrate and provide bonding sites for adsorbed atoms;

[0011] Transferring a second two-dimensional material layer onto the treated first two-dimensional material layer, and performing hydrogenation passivation treatment on the second two-dimensional material layer to inhibit the three-dimensional growth of the AlGaN material and provide an atomic transport channel for the subsequent growth of the two-dimensional AlGaN material;

[0012] Providing a metal source and an N source, growing a two-dimensional AlGaN material by van der Waals epitaxy, and forming a two-dimensional AlGaN material prefabricated layer between the first two-dimensional material layer and the second two-dimensional material layer;

[0013] Homogeneous van der Waals epitaxial growth of AlGaN material adopts a two-step growth method, firstly low-temperature growth of a nucleation layer, and then high-temperature growth to form a three-dimensional AlGaN material film on the second two-dimensional material layer.

[0014] Preferably, the amorphous substrate is made of quartz.

[0015] Preferably, the amorphous substrate is made of a polycrystalline material that is difficult to epitaxially grow a single crystal thin film, and the polycrystalline material includes mica and ceramics.

[0016] Preferably, the first two-dimensional material layer is an h-BN film or a transition metal dichalcogenide material film.

[0017] Preferably, the second two-dimensional material layer is a graphene film.

[0018] Preferably, the methods of transferring the first two-dimensional material layer and the second two-dimensional material layer are wet transfer or dry transfer; wherein the solution used in the wet transfer does not react with the amorphous substrate.

[0019] Preferably, the first two-dimensional material layer is treated by chemical solution treatment, plasma treatment, or high-temperature reaction treatment in a gas atmosphere.

[0020] Preferably, when the first two-dimensional material layer is an h-BN film, the h-BN film is treated with HCl solution and deionized water respectively to increase dangling bonds on the h-BN surface.

[0021] Preferably, the hydrogenation passivation treatment is specifically: introducing H2 to passivate the second two-dimensional material layer and the bonds between the second two-dimensional material layer and the first two-dimensional material layer, and at the same time forming channels at the defects of the first two-dimensional material to provide atomic transport channels for the subsequent growth of two-dimensional AlGaN material.

[0022] Preferably, the two-dimensional AlGaN material prefabricated layer and the three-dimensional AlGaN material thin film are prepared by MOCVD or MBE.

[0023] The advantages of the present invention using the above technical solution are:

[0024] The van der Waals epitaxy method of high-quality AlGaN material on an amorphous substrate of the present invention uses two-dimensional materials to provide nucleation sites, first grows a two-dimensional AlGaN material prefabricated layer between a first two-dimensional material layer and a second two-dimensional material layer, the growth thickness is not high, a high-quality buffer layer is obtained in a short time, and a van der Waals substrate is constructed to provide conditions for the subsequent three-dimensional growth of AlGaN materials; then, a van der Waals substrate composed of a two-dimensional AlGaN material prefabricated layer and a second two-dimensional material layer is used to realize homogeneous van der Waals epitaxy, and the potential fluctuation of the two-dimensional AlGaN prefabricated layer penetrates the second two-dimensional material layer to attract atomic nucleation and regulate atomic arrangement. The present invention uses two layers of two-dimensional materials to further alleviate the influence of the amorphous substrate on the epitaxial layer, greatly reduce stress and dislocation, improve crystal quality, and is expected to obtain AlGaN materials close to single crystals. The method of the present invention greatly improves the growth quality of AlGaN materials on amorphous substrates, provides help for large-area applications of AlGaN-based optoelectronic devices, and has the advantages of simple process, significant effect, and broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a schematic flow chart of the van der Waals epitaxy method of high-quality AlGaN material on an amorphous substrate of the present invention;

[0027] Figure 2 for Figure 1 The schematic diagram of the structure of the epitaxial wafer is obtained;

[0028] Description of the drawings: 1-amorphous substrate, 2-first two-dimensional material layer, 3-second two-dimensional material layer, 4-two-dimensional AlGaN material prefabricated layer, 5-three-dimensional AlGaN material thin film. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] like Figure 1 and 2 As shown, the present invention provides a van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate, comprising the following steps:

[0031] transferring a first two-dimensional material layer 2 on an amorphous substrate 1;

[0032] The first two-dimensional material layer 2 is processed to improve the epitaxial conditions of the amorphous substrate 1 and provide bonding sites for adsorbed atoms;

[0033] Transferring a second two-dimensional material layer 3 onto the treated first two-dimensional material layer 2, and performing a hydrogenation passivation treatment on the second two-dimensional material layer 3 to inhibit the three-dimensional growth of the AlGaN material and provide an atomic transport channel for the subsequent growth of the two-dimensional AlGaN material;

[0034] Providing a metal source and an N source, growing a two-dimensional AlGaN material by van der Waals epitaxy, and forming a two-dimensional AlGaN material prefabricated layer 4 between the first two-dimensional material layer 2 and the second two-dimensional material layer 3;

[0035] Homogeneous van der Waals epitaxial growth of AlGaN material adopts a two-step growth method, firstly low-temperature growth of a nucleation layer and then high-temperature growth to form a three-dimensional AlGaN material film 5 on the second two-dimensional material layer 3.

[0036] The principle of the van der Waals epitaxy method for high-quality AlGaN materials on amorphous substrates proposed in the present invention is that since the two-dimensional material layers are connected by weakly coupled van der Waals forces, they are easy to peel, transfer, and combine, which can provide nucleation sites on amorphous substrates and realize van der Waals epitaxy to grow two-dimensional and three-dimensional AlGaN materials. There are many factors that regulate nucleation and growth in van der Waals epitaxy, including van der Waals substrates, growth pretreatment, and growth conditions. In addition, in the process of realizing van der Waals epitaxy on van der Waals substrates, the use of a low-temperature-high-temperature two-step method to grow AlGaN materials can significantly improve the quality of van der Waals epitaxy.

[0037] The amorphous substrate 1 may be made of quartz, or a polycrystalline material that is difficult to epitaxially grow a single crystal thin film, including mica and ceramic. The amorphous substrate 1 has stable material properties and is suitable for the transfer of two-dimensional materials.

[0038] The first two-dimensional material layer 2 can be an h-BN film or a transition metal dichalcogenide material film, etc. The second two-dimensional material layer 3 is a graphene film, and the nucleation ability of the AlGaN material after hydrogenation passivation is weaker than that of the first two-dimensional material layer 2. For example, when the first two-dimensional material layer 2 is an h-BN film and the second two-dimensional material layer 3 is a graphene film, both the h-BN film and the graphene film are two-dimensional materials synthesized by methods such as CVD. h-BN can regulate the epitaxial growth of two-dimensional AlGaN materials, reduce the influence of the amorphous substrate 1 on the epitaxial layer, and reduce the stress and dislocation density of the epitaxial layer; graphene is used not only to realize the growth of two-dimensional AlGaN materials, but also for the homogeneous epitaxy of AlGaN materials, giving full play to the advantages of van der Waals epitaxy, further reducing the stress and dislocation density of epitaxial materials, and improving material quality.

[0039] The methods for transferring the first two-dimensional material layer 2 and the second two-dimensional material layer 3 are both wet transfer or dry transfer, wherein the solution used in the wet transfer does not react with the amorphous substrate.

[0040] The treatment method for the first two-dimensional material layer 3 is chemical solution treatment, plasma treatment, or high-temperature reaction treatment in a gas atmosphere. For example, when the first two-dimensional material layer 2 is an h-BN film and the second two-dimensional material layer 3 is a graphene film, the h-BN film is first transferred to the amorphous substrate 1. After the transfer is completed, the h-BN film is treated with HCl solution and deionized water to increase the hanging bonds on the h-BN surface to provide nucleation sites for the growth of two-dimensional AlGaN materials. After the treatment is completed, the graphene film is transferred to the h-BN film, and the van der Waals substrate is constructed. For the amorphous substrate 1, the surface of the amorphous substrate 1 lacks adsorption sites for forming a stable structure. Even if a nucleation island is formed, its orientation is random. By introducing h-BN treated with HCl solution, a large number of uniform nucleation sites are provided for van der Waals epitaxy, and the orientation is relatively consistent, which is conducive to the nucleation and growth of the epitaxial layer. At the same time, a two-dimensional AlGaN material prefabricated layer is grown on h-BN, and the growth thickness is not high. A high-quality buffer layer is obtained in a short time, which provides conditions for the subsequent three-dimensional growth of AlGaN materials.

[0041] The hydrogenation passivation treatment is specifically as follows: introducing H2 to passivate the second two-dimensional material layer 3 and the bonds between the second two-dimensional material layer 3 and the first two-dimensional material layer 2, while forming channels at the defects of the first two-dimensional material to provide atomic transport channels for the subsequent growth of two-dimensional AlGaN materials. For example, when the first two-dimensional material layer 2 is an h-BN film and the second two-dimensional material layer 3 is a graphene film, the hydrogenation treatment of the graphene film can passivate the bonds that may exist at the defects between graphene and h-BN, and at the same time, form channels at the defects of graphene to provide atomic transport channels for the subsequent growth of two-dimensional AlGaN materials. In addition, the graphene located above the h-BN protects the h-BN.

[0042] The preparation methods of the two-dimensional AlGaN material prefabricated layer 4 and the three-dimensional AlGaN material film 5 are both MOCVD or MBE. For example, when the first two-dimensional material layer 2 is an h-BN film and the second two-dimensional material layer 3 is a graphene film, a large number of uniform NO bond positions introduced by the HCl solution treatment of the h-BN film provide relatively stable bonding sites for the growth of the two-dimensional AlGaN material. Continue to grow the three-dimensional AlGaN material film by MOCVD or MBE, using a two-step growth method, first using the potential fluctuation distribution of the two-dimensional AlGaN material penetrating the graphene and the dangling bonds at the defects of the graphene to attract atoms to nucleate and form a nucleation layer; change the growth conditions to increase the temperature for lateral growth and merging to form a continuous film, then increase the growth temperature to achieve continuous growth of the epitaxial layer, and finally obtain a high-quality three-dimensional AlGaN material film.

[0043] Example 1

[0044] A high-quality three-dimensional AlGaN material film on an amorphous substrate, the preparation process of which is as follows:

[0045] After the quartz substrate was cut and polished, it was ultrasonically cleaned in ultrapure water, acetone, isopropanol, and deionized water for 10 minutes in sequence, and then dried with N2;

[0046] The two-dimensional material h-BN film was transferred to a quartz substrate using a wet transfer method. First, the PMMA polymer material was spin-coated on the surface of the h-BN film on the copper substrate. After curing, the substrate / h-BN film / PMMA was immersed in a mixed dilution of H2O2 and HCl for corrosion for 1 hour. After the Cu corrosion was completed, it was carefully transferred to a quartz substrate and immersed in isopropanol, acetone, ethanol, and deionized water for 10 minutes in turn to remove PMMA.

[0047] After the transfer is completed, the h-BN film is immersed in HCl solution and deionized water for 10 minutes respectively to increase the dangling bonds on the h-BN surface, provide NO bonds for the growth of two-dimensional AlGaN materials, and improve the nucleation density;

[0048] The graphene film is transferred to the h-BN film by a wet method, and the transfer method is the same as that of the h-BN film;

[0049] Using MOCVD equipment, 80 sccm H2 was introduced at 700°C for hydrogenation treatment for 30 minutes. At 950°C, 120 sccm TMAl and 120 sccm TMGa were introduced simultaneously for 30 seconds, and then 50 sccm NH3 was introduced for 30 seconds. This process was repeated until multi-layer two-dimensional AlGaN materials were grown.

[0050] A two-step growth method is carried out: using MOCVD equipment, first 3600sccm of NH3 is introduced at 700°C for nitridation treatment for 150s, and then 3600sccm of NH3 and 80sccm of TMAl are introduced to grow a low-temperature nucleation layer for 200s; then 150sccm of TMAl, 150sccm of TMGa, and 800sccm of NH3 are introduced at 1240°C to grow a high-temperature AlGaN layer, and the growth is continued until a three-dimensional AlGaN material film of the target thickness is obtained.

[0051] The synthesis process of h-BN film is as follows: h-BN is synthesized by CVD method. In a dual-temperature zone LPCVD equipment, the copper substrate is first annealed for 2 hours at 1050°C and 200sccm Ar is introduced. Then the precursor ammonia borane is heated to 110°C, and the substrate temperature is maintained at 1050°C while 150sccm Ar and 50sccm H2 are introduced to grow the h-BN film.

[0052] The synthesis process of graphene film is as follows: graphene is synthesized by CVD method, a copper substrate is placed in the LPCVD equipment, and 500 sccm Ar, 200 sccm H2, and 20 sccm CH4 are introduced at 1050°C for 1 hour.

[0053] Example 2

[0054] A high-quality three-dimensional AlGaN material film on an amorphous substrate, which is different from Example 1 in that both the h-BN film and the graphene film are formed by dry transfer, and the h-BN film is transferred as follows: the two-dimensional material h-BN film is transferred to a quartz substrate by dry transfer, and the PDMS film is attached to the surface of the h-BN film, ensuring that there are no bubbles between the PDMS film and the h-BN film; the sample is soaked in deionized water for 20 minutes to slowly separate the PDMS film from the copper substrate; after separation, the PDMS / h-BN film is carefully transferred to a quartz substrate, again ensuring that there are no bubbles; the sample on the quartz substrate is heated at 90°C for 60 minutes to reduce the viscosity between the PDMS and the h-BN film; finally, the PDMS is separated from the h-BN film to obtain the h-BN film on the quartz substrate. The other processes are the same as those in Example 1 and will not be repeated here.

[0055] The advantages of the present invention using the above technical solution are:

[0056] The van der Waals epitaxy method of high-quality AlGaN material on an amorphous substrate of the present invention uses two-dimensional materials to provide nucleation sites, first grows a two-dimensional AlGaN material prefabricated layer between a first two-dimensional material layer and a second two-dimensional material layer, the growth thickness is not high, a high-quality buffer layer is obtained in a short time, and a van der Waals substrate is constructed to provide conditions for the subsequent three-dimensional growth of AlGaN materials; then, a van der Waals substrate composed of a two-dimensional AlGaN material prefabricated layer and a second two-dimensional material layer is used to realize homogeneous van der Waals epitaxy, and the potential fluctuation of the two-dimensional AlGaN prefabricated layer penetrates the second two-dimensional material layer to attract atomic nucleation and regulate atomic arrangement. The present invention uses two layers of two-dimensional materials to further alleviate the influence of the amorphous substrate on the epitaxial layer, greatly reduce stress and dislocation, improve crystal quality, and is expected to obtain AlGaN materials close to single crystals. The method of the present invention greatly improves the growth quality of AlGaN materials on amorphous substrates, provides help for large-area applications of AlGaN-based optoelectronic devices, and has the advantages of simple process, significant effect, and broad application prospects.

[0057] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate, characterized in that: The following steps are involved: transferring a first two-dimensional material layer on an amorphous substrate; Processing the first two-dimensional material layer to improve the epitaxial growth conditions of the amorphous substrate and provide bonding sites for adsorbed atoms; Transferring a second two-dimensional material layer onto the treated first two-dimensional material layer, and performing hydrogenation passivation treatment on the second two-dimensional material layer to inhibit the three-dimensional growth of the AlGaN material and provide an atomic transport channel for the subsequent growth of the two-dimensional AlGaN material; Providing a metal source and an N source, growing a two-dimensional AlGaN material by van der Waals epitaxy, and forming a two-dimensional AlGaN material prefabricated layer between the first two-dimensional material layer and the second two-dimensional material layer; Homogeneous van der Waals epitaxial growth of AlGaN material adopts a two-step growth method, firstly low-temperature growth of a nucleation layer, and then high-temperature growth to form a three-dimensional AlGaN material film on the second two-dimensional material layer.

2. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The amorphous substrate is made of quartz.

3. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The material of the amorphous substrate is a polycrystalline material that is difficult to epitaxially grow a single crystal thin film, and the polycrystalline material includes mica and ceramics.

4. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The first two-dimensional material layer is an h-BN film or a transition metal dichalcogenide material film.

5. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The second two-dimensional material layer is a graphene film.

6. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The methods of transferring the first two-dimensional material layer and the second two-dimensional material layer are both wet transfer or dry transfer; wherein the solution used in the wet transfer does not react with the amorphous substrate.

7. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The first two-dimensional material layer is processed by chemical solution treatment, plasma treatment, or high-temperature reaction treatment in a gas atmosphere.

8. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 7, characterized in that: When the first two-dimensional material layer is an h-BN film, the h-BN film is treated with HCl solution and deionized water respectively to increase dangling bonds on the h-BN surface.

9. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The hydrogenation passivation treatment is specifically as follows: introducing H2 to passivate the second two-dimensional material layer and the bonds between the second two-dimensional material layer and the first two-dimensional material layer, while forming channels at the defects of the first two-dimensional material to provide atomic transport channels for the subsequent growth of two-dimensional AlGaN material.

10. The van der Waals epitaxy method for high-quality AlGaN material on an amorphous substrate according to claim 1, characterized in that: The two-dimensional AlGaN material prefabricated layer and the three-dimensional AlGaN material film are prepared by MOCVD or MBE.

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