High-reliability semiconductor laser chip

Abstract

The application relates to the chip field, in particular to a high-reliability semiconductor laser chip, which is used for solving the problem of poor heat resistance and heat conduction performance of an existing semiconductor laser chip; the high-reliability substrate is mainly made of high-reliability resin and silicon nitride; the high-reliability resin has good high-temperature resistance; after the silicon nitride is added into the high-reliability resin, the mechanical property of the high-reliability resin is improved, and the heat conduction performance of the high-reliability resin is effectively improved; the high-temperature resistance and the heat conduction performance of the prepared high-reliability semiconductor laser chip are excellent; the heat generated during the work of the chip can be quickly conducted out, the chip is prevented from being damaged, and the heat generated during the work of the chip is insufficient to deform the chip after the heat resistance is improved; the chip can keep long-term high performance, and the reliability is improved.

Description

Technical Field

[0001] This invention relates to the field of chips, and more specifically to a high-reliability semiconductor laser chip. Background Technology

[0002] A semiconductor laser is a device that generates laser light by using a certain semiconductor material as the working medium. The core light-emitting part of a semiconductor laser is a PN junction die composed of P-type and N-type semiconductors. In the current technology, semiconductor laser chips need to be packaged on a substrate with solder to finally form a semiconductor laser chip.

[0003] However, the substrate of existing semiconductor laser chips has poor thermal conductivity and heat resistance, which means that the heat generated during chip operation cannot be dissipated in time. Working under high temperature conditions for a long time can easily have an adverse effect on chip performance and poor reliability.

[0004] The key to this invention is how to improve the poor heat resistance and thermal conductivity of existing semiconductor laser chips. Therefore, a highly reliable semiconductor laser chip is urgently needed to solve the above problems. Summary of the Invention

[0005] To overcome the aforementioned technical problems, the present invention aims to provide a high-reliability semiconductor laser chip: A high-reliability resin, silicon nitride, calcium stearate, coupling agent, and antioxidant are added to a mixer and stirred to obtain a mixture. This mixture is then added to an extruder for melt extrusion. After shaping and cutting, a high-reliability substrate is obtained. Photoresist is spin-coated onto the surface of the high-reliability substrate, followed by UV exposure. The substrate is then immersed in a developer solution, removed, and etched into circular holes. Nickel is then sputtered into the circular holes, and the sputtered nickel is perfectly interconnected with the integrated circuit to obtain a high-reliability semiconductor laser chip. This solves the problem of poor heat resistance and thermal conductivity in existing semiconductor laser chips.

[0006] The objective of this invention can be achieved through the following technical solutions:

[0007] A high-reliability semiconductor laser chip includes a high-reliability substrate and an integrated circuit on the high-reliability substrate;

[0008] This high-reliability semiconductor laser chip is prepared by the following steps:

[0009] Step 1: Weigh out 80-100 parts of high-reliability resin, 7-13 parts of silicon nitride, 2-4 parts of calcium stearate, 1-6 parts of coupling agent, and 1-3 parts of antioxidant according to the following weight proportions, and set aside.

[0010] Step 2: Add the high-reliability resin, silicon nitride, calcium stearate, coupling agent, and antioxidant to the mixer and mix for 1-3 hours at a temperature of 35-55℃ and a stirring speed of 1000-1500 r / min to obtain the mixture.

[0011] Step 3: Add the mixture to an extruder for melt extrusion, and after shaping and cutting, obtain a highly reliable substrate;

[0012] Step 4: Spin-coat the photoresist onto the surface of the high-reliability substrate, then perform UV exposure, then add it to the developer, remove it and etch the circular holes, then sputter nickel into the circular holes.

[0013] Step 5: The sputtered nickel and the integrated circuit are perfectly interconnected to obtain a highly reliable semiconductor laser chip.

[0014] As a further aspect of the present invention: the highly reliable resin is prepared by the following steps:

[0015] S1: 2-Methoxyhydroquinone, 4,4'-difluorodiphenyl sulfone, anhydrous potassium carbonate, toluene, and sulfolane were added to a three-necked flask equipped with a stirrer, thermometer, and reflux condenser. The mixture was stirred for 10-15 minutes at 20-25°C and 400-500 rpm. Then, the mixture was heated to reflux while stirring, with a heating rate of 2-3°C / min. The reaction was continued for 4-5 hours. The mixture was then heated to 170-175°C and stirred for 8-10 hours. After the reaction was completed, the product was cooled to below 50°C and added to distilled water to precipitate the product. The precipitate was then filtered under vacuum. The filter cake was washed 3-5 times with distilled water and anhydrous ethanol, and then placed in a vacuum drying oven and dried at 50-60°C for 3-4 hours to obtain intermediate 1.

[0016] The reaction process is as follows:

[0017]

[0018] S2: Add intermediate 1 and dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and constant pressure dropping funnel. Purge with nitrogen for protection. While stirring at -20℃ and a stirring rate of 400-500 r / min, add boron tribromide solution dropwise, controlling the dropping rate to 1-2 drops / s. After the addition is complete, raise the temperature to 30-35℃ and continue stirring for 12-16 h. After the reaction is complete, add the reaction product to anhydrous ethanol, then filter under vacuum. Wash the filter cake 3-5 times with distilled water and anhydrous ethanol, then place it in a vacuum drying oven and dry at 100-110℃ for 20-30 h to obtain intermediate 2.

[0019] The reaction process is as follows:

[0020]

[0021] S3: Add intermediate 2, p-toluenesulfonic acid, and dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and reflux condenser. Purge with nitrogen for protection and stir for 20-30 min at a temperature of 20-25℃ and a stirring rate of 400-500 r / min. Then add perfluorooctanoic acid and continue stirring for 20-30 min. Then, while stirring, raise the temperature to reflux, controlling the heating rate at 2-3℃ / min. Continue stirring and react for 8-12 h. After the reaction is complete, cool the reaction product to room temperature, then filter under vacuum. Wash the filter cake 3-5 times with anhydrous diethyl ether, then place it in a vacuum drying oven and dry at a temperature of 50-60℃ for 8-10 h to obtain a high-reliability resin.

[0022] The reaction process is as follows:

[0023]

[0024] As a further aspect of the present invention: the ratio of 2-methoxyhydroquinone, 4,4'-difluorodiphenyl sulfone, anhydrous potassium carbonate, toluene and sulfolane in step S1 is 0.1 mol: 0.1 mol: 0.11-0.13 mol: 30-35 mL: 80-100 mL.

[0025] As a further aspect of the present invention: the ratio of intermediate 1, dichloromethane, and boron tribromide solution in step S2 is 5g:50-60mL:40-50mL, wherein the boron tribromide solution is a solution formed by dissolving boron tribromide in dichloromethane at a mass ratio of 1-2:8.

[0026] As a further aspect of the present invention: the ratio of intermediate 2, p-toluenesulfonic acid, dichloromethane and perfluorooctanoic acid in step S3 is 5g: 0.025-0.035g: 80-100mL: 0.01-0.03mol.

[0027] The beneficial effects of this invention are:

[0028] This invention discloses a high-reliability semiconductor laser chip. The process involves mixing high-reliability resin, silicon nitride, calcium stearate, coupling agent, and antioxidant in a mixer to obtain a mixture. This mixture is then melt-extruded in an extruder, shaped, and cut to obtain a high-reliability substrate. Photoresist is spin-coated onto the surface of the high-reliability substrate, followed by UV exposure. The substrate is then immersed in a developer solution, removed, and etched with circular holes. Nickel is then sputtered into the circular holes, and the sputtered nickel is seamlessly interconnected with the integrated circuit to obtain the high-reliability semiconductor laser chip. The high-reliability substrate is primarily composed of high-reliability resin and silicon nitride. The high-reliability resin exhibits excellent high-temperature resistance. Adding silicon nitride not only improves the mechanical properties of the high-reliability resin but also effectively enhances its thermal conductivity. This results in a high-reliability semiconductor laser chip with excellent high-temperature resistance and thermal conductivity, enabling rapid heat dissipation during chip operation, preventing chip damage. Furthermore, the improved heat resistance ensures that the heat generated during chip operation is insufficient to cause chip deformation, allowing the chip to maintain long-term high performance and improving its reliability.

[0029] In the process of preparing a high-reliability semiconductor laser chip, a high-reliability resin is first prepared. Intermediate 1 is generated by the polymerization reaction of 2-methoxyhydroquinone and 4,4'-difluorodiphenyl sulfone. Then, the methoxy group on intermediate 1 is deoxygenated to form a hydroxyl group, yielding intermediate 2. The hydroxyl group on intermediate 2 then undergoes an esterification reaction with the carboxyl group on perfluorooctanoic acid to obtain the high-reliability resin. The molecular chain of this high-reliability resin mainly consists of benzene rings and sulfone groups, exhibiting good thermal stability. A large number of CF bonds are then introduced. CF bonds have high bond energy, are difficult to break, and have high chemical resistance, thus effectively protecting the high-reliability resin and further improving its high-temperature resistance. Finally, when combined with silicon nitride, the resulting composite exhibits excellent high-temperature resistance and thermal conductivity. Detailed Implementation

[0030] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0031] Example 1:

[0032] This embodiment describes a method for preparing a highly reliable resin, comprising the following steps:

[0033] S1: 0.1 mol 2-methoxyhydroquinone, 0.1 mol 4,4'-difluorodiphenyl sulfone, 0.11 mol anhydrous potassium carbonate, 30 mL toluene, and 80 mL sulfolane were added to a three-necked flask equipped with a stirrer, thermometer, and reflux condenser. The mixture was stirred at 20 °C and 400 rpm for 10 min. Then, while stirring, the temperature was increased to reflux at a rate of 2 °C / min. The reaction was continued for 4 h, followed by stirring at 170 °C for 8 h. After the reaction was completed, the product was cooled to below 50 °C and added to distilled water to precipitate the product. The precipitate was then filtered under vacuum. The filter cake was washed three times with distilled water and anhydrous ethanol, and then placed in a vacuum drying oven and dried at 50 °C for 3 h to obtain intermediate 1.

[0034] S2: Add 5g of intermediate 1 and 50mL of dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and constant pressure dropping funnel. Purge with nitrogen for protection. While stirring at -20℃ and a stirring rate of 400r / min, add 40mL of boron tribromide solution dissolved in dichloromethane at a mass ratio of 1:8, controlling the dropping rate to 1 drop / s. After the addition is complete, raise the temperature to 30℃ and continue stirring for 12h. After the reaction is complete, add the reaction product to anhydrous ethanol, then filter under vacuum. Wash the filter cake three times with distilled water and anhydrous ethanol, then place it in a vacuum drying oven and dry at 100℃ for 20h to obtain intermediate 2.

[0035] S3: Add 5g of intermediate 2, 0.025g of p-toluenesulfonic acid, and 80mL of dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and reflux condenser. Purge with nitrogen for protection and stir for 20min at 20℃ and a stirring rate of 400r / min. Then add 0.01mol of perfluorooctanoic acid and continue stirring for 20min. Then, while stirring, raise the temperature to reflux, controlling the heating rate at 2℃ / min. Continue stirring and react for 8h. After the reaction is complete, cool the reaction product to room temperature, then filter under vacuum. Wash the filter cake three times with anhydrous diethyl ether, and then place it in a vacuum drying oven and dry at 50℃ for 8h to obtain a high-reliability resin.

[0036] Example 2:

[0037] This embodiment describes a method for preparing a highly reliable resin, comprising the following steps:

[0038] S1: 0.1 mol 2-methoxyhydroquinone, 0.1 mol 4,4'-difluorodiphenyl sulfone, 0.12 mol anhydrous potassium carbonate, 32 mL toluene, and 90 mL sulfolane were added to a three-necked flask equipped with a stirrer, thermometer, and reflux condenser. The mixture was stirred at 22 °C and 450 rpm for 12 min. Then, while stirring, the temperature was increased to reflux at a rate of 3 °C / min. The reaction was continued for 4.5 h, followed by stirring at 172 °C for 9 h. After the reaction was completed, the product was cooled to below 50 °C and added to distilled water to precipitate the product. The product was then filtered under vacuum, and the filter cake was washed four times with distilled water and anhydrous ethanol. The product was then placed in a vacuum drying oven and dried at 55 °C for 3.5 h to obtain intermediate 1.

[0039] S2: Add 5g of intermediate 1 and 55mL of dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and constant pressure dropping funnel. Under nitrogen protection, while stirring at -20℃ and a stirring rate of 450r / min, add 45mL of boron tribromide solution dissolved in dichloromethane at a mass ratio of 1.5:8, controlling the dropping rate to 1 drop / s. After the addition is complete, raise the temperature to 32℃ and continue stirring for 14h. After the reaction is complete, add the reaction product to anhydrous ethanol, then filter under vacuum. Wash the filter cake four times with distilled water and anhydrous ethanol, then place it in a vacuum drying oven and dry it at 105℃ for 25h to obtain intermediate 2.

[0040] S3: Add 5g of intermediate 2, 0.03g of p-toluenesulfonic acid, and 90mL of dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and reflux condenser. Purge with nitrogen for protection and stir for 25 minutes at 22℃ and a stirring rate of 450r / min. Then add 0.02mol of perfluorooctanoic acid and continue stirring for another 25 minutes. Then, while stirring, raise the temperature to reflux, controlling the heating rate at 2.5℃ / min. Continue stirring and react for 10 hours. After the reaction is complete, cool the reaction product to room temperature, then filter under vacuum. Wash the filter cake four times with anhydrous diethyl ether and then place it in a vacuum drying oven at 55℃ for 9 hours to obtain a high-reliability resin.

[0041] Example 3:

[0042] This embodiment describes a method for preparing a highly reliable resin, comprising the following steps:

[0043] S1: 0.1 mol 2-methoxyhydroquinone, 0.1 mol 4,4'-difluorodiphenyl sulfone, 0.13 mol anhydrous potassium carbonate, 35 mL toluene, and 100 mL sulfolane were added to a three-necked flask equipped with a stirrer, thermometer, and reflux condenser. The mixture was stirred at 25 °C and 500 rpm for 15 min. Then, while stirring, the temperature was increased to reflux at a rate of 3 °C / min. The reaction was continued for 5 h, followed by stirring at 175 °C for 10 h. After the reaction was completed, the product was cooled to below 50 °C and added to distilled water to precipitate the product. The product was then filtered under vacuum. The filter cake was washed five times with distilled water and anhydrous ethanol, and then placed in a vacuum drying oven and dried at 60 °C for 4 h to obtain intermediate 1.

[0044] S2: Add 5g of intermediate 1 and 60mL of dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and constant pressure dropping funnel. Under nitrogen protection, while stirring at -20℃ and a stirring rate of 500r / min, add 50mL of boron tribromide solution dissolved in dichloromethane at a mass ratio of 2:8, controlling the dropping rate to 2 drops / s. After the addition is complete, raise the temperature to 35℃ and continue stirring for 16h. After the reaction is complete, add the reaction product to anhydrous ethanol, then filter under vacuum. Wash the filter cake five times with distilled water and anhydrous ethanol, then place it in a vacuum drying oven and dry it at 110℃ for 30h to obtain intermediate 2.

[0045] S3: Add 5g of intermediate 2, 0.035g of p-toluenesulfonic acid, and 100mL of dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and reflux condenser. Purge with nitrogen for protection and stir for 30min at 25℃ and a stirring rate of 500r / min. Then add 0.03mol of perfluorooctanoic acid and continue stirring for another 30min. Then, while stirring, raise the temperature to reflux, controlling the heating rate at 3℃ / min. Continue stirring and react for 12h. After the reaction is complete, cool the reaction product to room temperature, then filter under vacuum. Wash the filter cake 5 times with anhydrous diethyl ether and then place it in a vacuum drying oven and dry at 60℃ for 10h to obtain a high-reliability resin.

[0046] Example 4:

[0047] This embodiment is a high-reliability semiconductor laser chip, including a high-reliability substrate and an integrated circuit on the high-reliability substrate;

[0048] This high-reliability semiconductor laser chip is prepared by the following steps:

[0049] Step 1: Weigh out 80 parts of the high-reliability resin, 7 parts of silicon nitride, 2 parts of calcium stearate, 1 part of silane coupling agent KH-550, and 1681 parts of antioxidant from Example 1 according to the weight ratio, and set aside.

[0050] Step 2: Add the high-reliability resin, silicon nitride, calcium stearate, silane coupling agent KH-550, and antioxidant 168 to the mixer and mix for 1 hour at a temperature of 35°C and a stirring speed of 1000 r / min to obtain the mixture.

[0051] Step 3: Add the mixture to an extruder for melt extrusion, and after shaping and cutting, obtain a highly reliable substrate;

[0052] Step 4: Spin-coat the photoresist onto the surface of the high-reliability substrate, then perform UV exposure, then add it to the developer, remove it and etch the circular holes, then sputter nickel into the circular holes.

[0053] Step 5: The sputtered nickel and the integrated circuit are perfectly interconnected to obtain a highly reliable semiconductor laser chip.

[0054] Example 5:

[0055] This embodiment is a high-reliability semiconductor laser chip, including a high-reliability substrate and an integrated circuit on the high-reliability substrate;

[0056] This high-reliability semiconductor laser chip is prepared by the following steps:

[0057] Step 1: Weigh out 90 parts by weight of the high-reliability resin, 10 parts by weight of silicon nitride, 3 parts by weight of calcium stearate, 3.5 parts by weight of silane coupling agent KH-560, and 10102 parts by weight of antioxidant from Example 2, and set aside.

[0058] Step 2: Add the high-reliability resin, silicon nitride, calcium stearate, silane coupling agent KH-560, and antioxidant 1010 to the mixer and mix for 2 hours at a temperature of 45℃ and a stirring speed of 1250r / min to obtain the mixture.

[0059] Step 3: Add the mixture to an extruder for melt extrusion, and after shaping and cutting, obtain a highly reliable substrate;

[0060] Step 4: Spin-coat the photoresist onto the surface of the high-reliability substrate, then perform UV exposure, then add it to the developer, remove it and etch the circular holes, then sputter nickel into the circular holes.

[0061] Step 5: The sputtered nickel and the integrated circuit are perfectly interconnected to obtain a highly reliable semiconductor laser chip.

[0062] Example 6:

[0063] This embodiment is a high-reliability semiconductor laser chip, including a high-reliability substrate and an integrated circuit on the high-reliability substrate;

[0064] This high-reliability semiconductor laser chip is prepared by the following steps:

[0065] Step 1: Weigh out 100 parts by weight of the high-reliability resin, 13 parts by weight of silicon nitride, 4 parts by weight of calcium stearate, 6 parts by weight of silane coupling agent KH-570, and 10763 parts by weight of antioxidant from Example 3, and set aside.

[0066] Step 2: Add the high-reliability resin, silicon nitride, calcium stearate, silane coupling agent KH-570, and antioxidant 1076 to the mixer and mix for 3 hours at a temperature of 55℃ and a stirring speed of 1500r / min to obtain the mixture.

[0067] Step 3: Add the mixture to an extruder for melt extrusion, and after shaping and cutting, obtain a highly reliable substrate;

[0068] Step 4: Spin-coat the photoresist onto the surface of the high-reliability substrate, then perform UV exposure, then add it to the developer, remove it and etch the circular holes, then sputter nickel into the circular holes.

[0069] Step 5: The sputtered nickel and the integrated circuit are perfectly interconnected to obtain a highly reliable semiconductor laser chip.

[0070] Comparative Example 1:

[0071] The difference between Comparative Example 1 and Example 6 is that Intermediate 1 is used instead of the high-reliability resin.

[0072] Comparative Example 2:

[0073] The difference between Comparative Example 2 and Example 6 is that silicon nitride is not added.

[0074] The performance of the high-reliability semiconductor laser chips of Examples 4-6 and Comparative Examples 1-2 was tested, and the test results are shown in the table below:

[0075] sample Example 4 Example 5 Example 6 Comparative Example 1 Comparative Example 2 Thermal conductivity, W / (mK) 2.02 2.15 2.24 2.12 1.29 5% weight loss at temperature, ℃ 485 501 523 428 316

[0076] Referring to the data in the table above, and comparing Example 6 with Comparative Examples 1-2, it can be seen that using high-reliability resin and adding silicon nitride can improve the thermal conductivity and high-temperature resistance of high-reliability semiconductor laser chips.

[0077] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0078] The above description is merely an example and illustration of the present invention. Those skilled in the art can make various modifications or additions to the specific embodiments described, or use similar methods to replace them, as long as they do not deviate from the invention or exceed the scope defined in the claims, all of which should fall within the protection scope of the present invention.

Claims

1. A high-reliability semiconductor laser chip, characterized in that, This includes high-reliability substrates and integrated circuits on high-reliability substrates; This high-reliability semiconductor laser chip is prepared by the following steps: Step 1: Weigh out 80-100 parts of high-reliability resin, 7-13 parts of silicon nitride, 2-4 parts of calcium stearate, 1-6 parts of coupling agent, and 1-3 parts of antioxidant according to the following weight proportions, and set aside. Step 2: Add the high-reliability resin, silicon nitride, calcium stearate, coupling agent, and antioxidant to the mixer and mix for 1-3 hours at a temperature of 35-55℃ and a stirring speed of 1000-1500 r / min to obtain the mixture. Step 3: Add the mixture to an extruder for melt extrusion, and after shaping and cutting, obtain a highly reliable substrate; Step 4: Spin-coat the photoresist onto the surface of the high-reliability substrate, then perform UV exposure, then add it to the developer, remove it and etch the circular holes, then sputter nickel into the circular holes. Step 5: The sputtered nickel and integrated circuit are perfectly interconnected to obtain a highly reliable semiconductor laser chip; The highly reliable resin is prepared by the following steps: S1: 2-Methoxyhydroquinone, 4,4'-difluorodiphenyl sulfone, anhydrous potassium carbonate, toluene, and sulfolane were added to a three-necked flask equipped with a stirrer, thermometer, and reflux condenser. The mixture was stirred for 10-15 min at 20-25℃ and 400-500 r / min. Then, the mixture was heated to reflux while stirring, with the heating rate controlled at 2-3℃ / min. The reaction was continued for 4-5 h, and then the temperature was raised to 170-175℃ and stirred for 8-10 h. After the reaction was completed, the reaction product was cooled to below 50℃ and then added to distilled water to precipitate the precipitate. The precipitate was then filtered under vacuum. The filter cake was washed 3-5 times with distilled water and anhydrous ethanol, and then placed in a vacuum drying oven and dried at 50-60℃ for 3-4 h to obtain intermediate 1. S2: Add intermediate 1 and dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and constant pressure dropping funnel. Purge with nitrogen for protection. While stirring at -20℃ and a stirring rate of 400-500 r / min, add boron tribromide solution dropwise, controlling the dropping rate to 1-2 drops / s. After the addition is complete, raise the temperature to 30-35℃ and continue stirring for 12-16 h. After the reaction is complete, add the reaction product to anhydrous ethanol, then filter under vacuum. Wash the filter cake 3-5 times with distilled water and anhydrous ethanol, then place it in a vacuum drying oven and dry at 100-110℃ for 20-30 h to obtain intermediate 2. S3: Add intermediate 2, p-toluenesulfonic acid, and dichloromethane to a three-necked flask equipped with a stirrer, thermometer, gas delivery tube, and reflux condenser. Purge with nitrogen for protection and stir for 20-30 min at 20-25℃ and a stirring rate of 400-500 r / min. Then add perfluorooctanoic acid and continue stirring for 20-30 min. Then, while stirring, raise the temperature to reflux, controlling the heating rate at 2-3℃ / min. Continue stirring and react for 8-12 h. After the reaction is complete, cool the reaction product to room temperature, then filter under vacuum. Wash the filter cake 3-5 times with anhydrous diethyl ether, then place it in a vacuum drying oven and dry at 50-60℃ for 8-10 h to obtain a highly reliable resin.

2. The high-reliability semiconductor laser chip of claim 1, wherein, The ratio of 2-methoxyhydroquinone, 4,4'-difluorodiphenyl sulfone, anhydrous potassium carbonate, toluene, and sulfolane in step S1 is 0.1 mol: 0.1 mol: 0.11-0.13 mol: 30-35 mL: 80-100 mL.

3. The high-reliability semiconductor laser chip of claim 1, wherein, In step S2, the ratio of intermediate 1, dichloromethane, and boron tribromide solution is 5g:50-60mL:40-50mL, and the boron tribromide solution is a solution formed by dissolving boron tribromide in dichloromethane at a mass ratio of 1-2:

8.

4. The high-reliability semiconductor laser chip of claim 1, wherein, In step S3, the ratio of intermediate 2, p-toluenesulfonic acid, dichloromethane, and perfluorooctanoic acid is 5g: 0.025-0.035g: 80-100mL: 0.01-0.03mol.

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